U.S. patent application number 16/199041 was filed with the patent office on 2019-03-28 for substrate unit, display device and method for manufacturing display device.
The applicant listed for this patent is INNOLUX CORPORATION. Invention is credited to Yu-Yao CHEN, Ker-Yih KAO, Chi-Che TSAI, Jiun-Ru TZENG, Wei-Yen WU.
Application Number | 20190097180 16/199041 |
Document ID | / |
Family ID | 57774955 |
Filed Date | 2019-03-28 |
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United States Patent
Application |
20190097180 |
Kind Code |
A1 |
WU; Wei-Yen ; et
al. |
March 28, 2019 |
SUBSTRATE UNIT, DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY
DEVICE
Abstract
A substrate unit, a display device, and a method for
manufacturing the display device are disclosed. The substrate unit
includes a carrier plate, a glass substrate and an interlayer
disposed between the carrier plate and the glass substrate. The
thickness of the glass substrate is less than that of the carrier
plate, and the thickness of the interlayer is less than that of the
glass substrate. The display device includes a first glass
substrate, a second glass substrate, a device layer and a sealing
layer. The device layer and the sealing layer are disposed between
the first glass substrate and the second glass substrate, wherein
the sealing layer, the first glass substrate and the second glass
substrate form an enclosed space, and the device layer is disposed
in the enclosed space. The thickness of the first glass substrate
is between 0.05 mm and 0.3 mm.
Inventors: |
WU; Wei-Yen; (Jhu-Nan,
TW) ; CHEN; Yu-Yao; (Jhu-Nan, TW) ; TZENG;
Jiun-Ru; (Jhu-Nan, TW) ; TSAI; Chi-Che;
(Jhu-Nan, TW) ; KAO; Ker-Yih; (Jhu-Nan,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
INNOLUX CORPORATION |
Jhu-Nan |
|
TW |
|
|
Family ID: |
57774955 |
Appl. No.: |
16/199041 |
Filed: |
November 23, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15183527 |
Jun 15, 2016 |
10177346 |
|
|
16199041 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G06F 2203/04103
20130101; G06F 3/044 20130101; G02F 1/1303 20130101; B32B 2037/1253
20130101; H01L 27/326 20130101; H01L 2251/558 20130101; B32B 37/025
20130101; B32B 2457/20 20130101; H01L 51/56 20130101; H01L 51/0096
20130101; G02F 1/13338 20130101; B32B 17/00 20130101; B32B 38/1808
20130101; B32B 2310/0831 20130101; B32B 2315/08 20130101; B32B
2309/105 20130101; B32B 2457/208 20130101; G02F 2001/133331
20130101; Y02E 10/549 20130101; H01L 51/524 20130101; G02F
2001/13415 20130101; Y02P 70/50 20151101; Y02P 70/521 20151101;
G02F 2202/28 20130101; G02F 2001/1316 20130101; B32B 2457/206
20130101 |
International
Class: |
H01L 51/56 20060101
H01L051/56; B32B 37/00 20060101 B32B037/00; H01L 51/00 20060101
H01L051/00; B32B 17/00 20060101 B32B017/00; B32B 38/18 20060101
B32B038/18; H01L 27/32 20060101 H01L027/32; H01L 51/52 20060101
H01L051/52 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 17, 2015 |
TW |
104123336 |
Claims
1. A substrate unit, comprising: a carrier plate; a glass
substrate; and an interlayer disposed between the carrier plate and
the glass substrate; wherein the thickness of the glass substrate
is less than that of the carrier plate, and the thickness of the
interlayer is less than that of the glass substrate.
2. The substrate unit of claim 1, wherein the thickness of the
glass substrate is between 0.05 mm and 0.3 mm, and the thickness of
the interlayer is between 0.01 .mu.m and 2 .mu.m.
3. The substrate unit of claim 1, wherein the interlayer has a
release surface adjacent to the glass substrate, and an adhesion
force between the interlayer and the carrier plate is greater than
that between the interlayer and the glass substrate.
4. The substrate unit of claim 3, wherein a water contact angle of
the release surface is between 40.degree. and 90.degree..
5. The substrate unit of claim 1, wherein the material of the
interlayer is a metal, a metal oxide, a silicon oxide, an
organosilicon compound, an organotitanium compound, an
organoaluminum compound, or an organic polymer.
6. The substrate unit of claim 1, further comprising: a function
layer disposed on the carrier plate and on the lateral peripheries
of the interlayer and the glass substrate.
7. The substrate unit of claim 6, wherein the function layer
connects the carrier plate and the glass substrate.
8. The substrate unit of claim 1, further comprising: a function
layer covering the lateral periphery and the upper surface of the
interlayer and disposed between the interlayer and the glass
substrate.
9. A display device, comprising: a first glass substrate; a second
glass substrate; a device layer disposed between the first glass
substrate and the second glass substrate; and a sealing layer
disposed between the first glass substrate and the second glass
substrate, wherein the sealing layer, the first glass substrate,
and the second glass substrate form an enclosed space, and the
device layer is disposed in the enclosed space; wherein the
thickness of the first glass substrate is between 0.05 mm and 0.3
mm.
10. The display device of claim 9, wherein the thickness of the
second glass substrate is between 0.05 mm and 0.3 mm, and an
exterior surface of the first glass substrate or the second glass
substrate is a smooth surface without etched dimples.
11. The display device of claim 9, further comprising: an electrode
layer disposed on an exterior surface of the second glass substrate
away from the first glass substrate.
12. A method for manufacturing a display device, comprising:
providing a carrier plate and forming an interlayer on the carrier
plate; disposing a substrate on the interlayer to form a substrate
unit; and forming a device layer on the substrate to obtain a
device substrate, wherein a thickness of the substrate is less than
a thickness of the carrier plate, and a thickness of the interlayer
is less than the thickness of the substrate.
13. The method of claim 12, wherein the device layer comprises at
least one of thin film transistors, organic light emitting diode
units, touch devices, or a color filter layer.
14. The method of claim 13, wherein a material of the at least one
of thin film transistors comprises amorphous silicon, amorphous
indium gallium zinc oxide, c-axis aligned crystal indium gallium
zinc oxide, or low temperature poly silicon.
15. The method of claim 12, wherein the interlayer has a release
surface adjacent to the substrate, and an adhesion force between
the interlayer and the carrier plate is greater than that between
the interlayer and the substrate.
16. The method of claim 15, wherein a water contact angle of the
release surface is between 40 degrees and 90 degrees.
17. The method of claim 12, wherein a material of the interlayer is
a metal, a metal oxide, a silicon oxide, an organosilicon compound,
an organotitanium compound, an organoaluminum compound, or an
organic polymer.
18. The method of claim 12, wherein the interlayer is formed on the
carrier plate by dip coating, roll coating, print coating, or spin
coating.
19. The method of claim 12, wherein the substrate is flexible.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a Divisional Application (DA) of an
earlier filed, pending, application, having application Ser. No.
15/183,527 and filed on Jun. 15, 2016, the content of which,
including drawings, is expressly incorporated by reference
herein.
BACKGROUND OF THE INVENTION
Field of Invention
[0002] The invention relates to a substrate unit, a display device,
and a method for manufacturing the display device.
Related Art
[0003] With the advance of technology, flat display devices have
been broadly applied to various fields, for example liquid crystal
display devices or organic light emitting diode (OLED) display
devices. Because flat display devices have superior characteristics
of compact volume, low power consumption and low radiation, they
gradually replace conventional cathode ray tube display devices and
are applied to various electronic products such as mobile phones,
portable media devices, laptops, tablet computers, and other
display devices.
[0004] Because of large-scale, thin and lightweight requirements of
a display device, a thinner glass substrate of a display panel is
developed from the thickness of 0.5 mm-0.7 mm to the thickness of
0.3 mm (or less). However, if the thickness of the glass substrate
is equal to or less than 0.3 mm, the process of forming
semiconductor devices for displaying on the surface of the glass
substrate cannot be implemented by the existing manufacturing
equipment due to thinness and insufficient rigidity of the thin
glass substrate.
[0005] One conventional solution is to attach a thin glass to
another thicker glass carrier plate to increase its rigidity, and
then they will be separated after the manufacturing process is
accomplished. However, in a subsequent high temperature process
(higher than 250.degree. C. for example), silicon and oxygen bonds
(--Si--O--Si--) between the glass carrier plate and the thin glass
are formed, which results in difficult separation between the thin
glass and the glass carrier plate.
[0006] Another conventional solution is to attach a thin glass to a
glass carrier plate by adhesion using glue material. However,
because general glue materials have poor heat resistances, excess
glue or bubbles occur during coating. Moreover, some residual glue
during separation results in less efficiency for recycling the
glass carrier plate.
SUMMARY OF THE INVENTION
[0007] An aspect of the disclosure is to provide a substrate unit,
a display device, and a method for manufacturing the display device
adapted to the existing manufacturing equipment for production and
meeting the large-scale, thin and lightweight requirements of
display device.
[0008] A method for manufacturing the display device includes the
steps of: providing a first carrier plate and forming a first
interlayer on the first carrier plate; disposing a first glass
substrate on the first interlayer to form a first substrate unit;
forming a first device layer on the first glass substrate to obtain
a first device substrate; providing a second carrier plate and
forming a second interlayer on the second carrier plate; disposing
a second glass substrate on the second interlayer to form a second
substrate unit; oppositely placing and then combining the second
substrate unit and the first device substrate; and separating the
first glass substrate from the first interlayer and separating the
second glass substrate from the second interlayer to obtain the
display device. Alternatively, the method may further include the
steps of: separating the second glass substrate from the second
interlayer; forming an electrode layer on an exterior surface of
the second glass substrate away from the first glass substrate; and
separating the first glass substrate from the first interlayer to
obtain the display device. By the manufacturing process mentioned
above, the substrate unit and the display device can be produced by
the existing manufacturing equipment, and the display device can
also meet the large-scale, thin and lightweight requirements.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] The invention will become more fully understood from the
detailed description and accompanying drawings, which are given for
illustration only, and thus are not limitative of the present
invention, and wherein:
[0010] FIG. 1 is a flow chart of the steps of the method for
manufacturing a display device according to an embodiment;
[0011] FIG. 2A to FIG. 2G are schematic diagrams of the
manufacturing process of the display device according to the first
embodiment;
[0012] FIG. 3A to FIG. 3F are schematic diagrams of the
manufacturing process of the display device according to the second
embodiment;
[0013] FIG. 4A to FIG. 4F are schematic diagrams of the
manufacturing process of the display device according to the third
embodiment;
[0014] FIG. 5A to FIG. 5F are schematic diagrams of the
manufacturing process of the display device according to the fourth
embodiment;
[0015] FIG. 6 is a flow chart of the steps of the method for
manufacturing a display device according to another embodiment;
and
[0016] FIG. 7A to FIG. 7D are schematic diagrams of the
manufacturing process of the display device according to the fourth
embodiment.
DETAILED DESCRIPTION OF THE INVENTION
[0017] The embodiments of the invention will be apparent from the
following detailed description, which proceeds with reference to
the accompanying drawings, wherein the same references relate to
the same elements.
[0018] A cleaning process such as water wash or ozone ashing is
performed on the surfaces of a carrier plate and a thin glass
substrate before a process for thinning the display device. After
the cleaning process, hydroxyl groups (--OH) are formed on the
surfaces of the carrier plate and the thin glass substrate. If the
carrier plate is directly attached to the thin glass substrate, a
subsequent high temperature process (>250.degree. C.) will cause
reactions of hydroxyl groups between them to form silicon and
oxygen bonds (--Si--O--Si--) so the carrier plate and the thin
glass substrate will not be easily separated and it is difficult to
make the display device thinner and recycle the carrier plate for
reuse. The disclosure provides the following manufacturing process
to avoid the aforementioned problems. The process is implemented by
the existing manufacturing equipment for production, and the
produced display device meets the large-scale, thin and lightweight
requirements. Technologies of a substrate unit, a device substrate,
and a display device including a substrate unit and a device
substrate can be realized by the following detailed description of
a method for manufacturing a display device.
[0019] Referring to FIG. 1 and FIG. 2A to FIG. 2G, FIG. 1 is a flow
chart of steps of a method for manufacturing a display device
according to an embodiment, and FIG. 2A to FIG. 2G are schematic
diagrams of the manufacturing process of the display device 3
according to the first embodiment.
[0020] As shown in FIG. 1, the method for manufacturing the display
device includes the step S01 to the step S07.
[0021] First, as shown in FIG. 1 and FIG. 2A, the step S01 is to
provide a first carrier plate 11 and form a first interlayer 12 on
the first carrier plate 11. Here, the first carrier plate 11 for
example a glass carrier plate or a silicon substrate is heat
resistant, and it may still be thick enough to be a support and
meet the requirement of thickness for a process machine. The first
interlayer 12 is formed on the first carrier plate 11 by, for
example, a coating method such as dip coating, roll coating, print
coating, spin coating or the like, but it is not limited thereto.
Moreover, the first interlayer 12 can be coated on the first
carrier plate 11 and 2 to 5 mm distant from the edge of the first
carrier plate 11 by physical vapor deposition (PVD), chemical vapor
deposition (CVD), slit coater, or other coating equipment. In
addition, the first interlayer 12 can tolerate high temperature of
250.degree. C. to 800.degree. C., preferably, 600.degree. C. to
800.degree. C. It can also tolerate a subsequent semiconductor
device process for amorphous silicon (a-Si), amorphous indium
gallium zinc oxide (a-IGZO), c-axis aligned crystal indium gallium
zinc oxide (CAAC-IGZO), low temperature poly silicon (LTPS) or the
like. The material of the first interlayer 12 can be a metal, a
metal oxide (e.g. indium tin oxide (ITO)), a silicon oxide (e.g.
SiOx), an organosilicon compound, an organotitanium compound, an
organoaluminum compound, or an organic polymer, and it is not
limited thereto.
[0022] In one embodiment, the first interlayer 12 may be formed by,
for example, the below organosilicon compound:
##STR00001##
Here, R1, R2 and R3 are each independently C1-6 alkyl groups, X is
silicon (Si), titanium (Ti) or aluminum (Al), and Y is a
hydrophobic functional group. When the first carrier plate 11 is
coated with the above compound, a hydroxyl group (--OH) formed by
hydrolysis and self-condensation can act as a reactive functional
group to react with a hydroxyl group exposed on the surface of the
first carrier plate 11 so as to form a bond. Then, after further
hydrolysis and condensation reactions, part or all of the bonds can
be condensed and form oxygen bonds, which results in difficult
separation between the first carrier plate 11 and the first
interlayer 12. Moreover, because the hydrophobic functional groups
Y will not react with the first carrier plate 11, the hydrophobic
functional groups Y can be exposed on the surface of the first
interlayer 12 after hydrolysis and condensation reactions. Thereby,
a hydrophobic surface is formed (referred to as a first release
surface here).
[0023] Subsequently, the step S02 is performed to dispose a first
glass substrate 13 on the first interlayer 12 to form a first
substrate unit U1 (referred to as a substrate unit U1). Here, air
between the first glass substrate 13 and the first interlayer 12 is
excluded by, for example, vacuum lamination or stamping with a
stamping machine so as to generate a pressure difference between
two sides of the first glass substrate 13. Thereby, the first glass
substrate 13 is disposed on the first carrier plate 11 having the
first interlayer 12 by atmospheric pressure and the electrostatic
force between the first glass substrate 13 and the first interlayer
12. In the embodiment, as shown in FIG. 2A, a roller A is used to
extrude air between the first glass substrate 13 and the first
interlayer 12 (stamping with a stamping machine) to dispose the
first glass substrate 13 on the first interlayer 12. For better
utilization of glass, the size of the first glass substrate 13
cannot be much less than that of the first carrier plate 11.
Preferably, the edge of the first glass substrate 13 is located
about 1 to 2 mm distant from the edge of the first carrier plate
11. The thickness of the first glass substrate 13 is less than that
of the first carrier plate 11, and the thickness of the first
interlayer 12 is less than that of the first glass substrate 13.
Here, the thickness of the first glass substrate 13 may be between
0.05 mm and 0.3 mm (0.05 mm.ltoreq.the thickness of the first glass
substrate 13.ltoreq.0.3 mm, and the thickness of the first
interlayer 12 may be between 0.01 .mu.m and 2 .mu.m (0.01
.mu.m.ltoreq.the thickness of the first interlayer 12.ltoreq.2
.mu.m). The material of the first glass substrate 13 may be glass.
The first glass substrate 13 itself can be a support, and itself is
flexible, chemical-resistant and capable of blocking water and
oxygen. Thus, it can be used as a substrate for an organic
light-emitting diode (OLED) display, a liquid crystal display (LCD)
or a light-emitting diode (LED) display. Moreover, the first glass
substrate 13 can tolerate higher temperature in comparison with the
first interlayer 12 to accomplish the above-mentioned processes for
low temperature poly silicon and other devices or other processes
such as laser debonding or laser curing.
[0024] The surface roughness of the material of the first
interlayer 12 needs to be less than 10 nm RMS (root mean square).
The excessive surface roughness will cause insufficient contact
area so bad attaching, bubbles, mura or the like may occur. These
problems easily cause the abnormal misjudgment at an inspection
station in subsequent processes, or the peeling at the interface
between the first glass substrate 13 and the first carrier plate 11
occurs due to reagents seeping into the interface in the
processes.
[0025] In the first interlayer 12, the first release surface
(namely hydrophobic surface) is a surface adjacent to (facing) the
first glass substrate 13. The hydrophilic/hydrophobic properties of
the first release surface relate to the adhesion force between the
first interlayer 12 and the first glass substrate 13. Therefore,
dilution ratios between the above-mentioned compounds and solvents
can be changed, or bondings between hydrophobic functional groups Y
and X can be more selectively broken by an illumination process to
adjust the proportion of exposed hydrophobic functional groups Y.
Then, the hydrophilic/hydrophobic properties of the hydrophobic
surface can be controlled (namely the water contact angle can be
controlled), so the adhesion force between the first interlayer 12
and the first carrier plate 11 is greater than that between the
first interlayer 12 and the first glass substrate 13. Accordingly,
a subsequent separation of the first interlayer 12 and the first
glass substrate 13 becomes easier. Here, the water contact angle of
the first release surface (hydrophobic surface) of the first
interlayer 12 may be between 40.degree. and 90.degree., preferably,
between 50.degree. and 80.degree..
[0026] In another embodiment, if the first interlayer 12 is a
polymer layer formed by organic polymers, a surface modification
method can be used to modify the surface of the first interlayer
12. Here, the surface modification method may include an ionized
gas treatment, UV irradiation, or a wet chemical treatment.
Thereby, the hydrophobic functional groups Y is exposed on the
surface of the first interlayer 12 to form a hydrophobic
surface.
[0027] Subsequently, as shown in FIG. 2C, the step S03 is performed
to form a first device layer 14 on the first glass substrate 13 to
obtain a first device substrate E1 (referred to as a device
substrate E1). Here, the first device layer 14 may include a thin
film transistor (TFT) device, a color filter, an organic light
emitting diode unit (including a TFT device and an organic light
emitting device), or a touch device. The material of the active
layer of the above-mentioned TFT device may be the above mentioned
amorphous silicon, amorphous indium gallium zinc oxide, c-axis
aligned crystal indium gallium zinc oxide, or low temperature poly
silicon. In the embodiment, the first device layer 14 includes an
organic light emitting diode unit, and the first device substrate
E1 is an organic light emitting diode substrate.
[0028] Then, as shown in FIG. 2D, the step S04 is to provide a
second carrier plate 21 and form a second interlayer 22 on the
second carrier plate 21; the step S05 is to dispose a second glass
substrate 23 on the second interlayer 22 to form a second substrate
unit U2. Here, the step S04 can refer to the above step S01, the
step S05 can refer to the above step S02, so they are not repeated
here. For example, the second substrate unit U2 can be obtained
first (the step S04 to S05) and then the first device substrate E1
is obtained (the step S01 to S03), or they can be performed
simultaneously, and the order is not limited thereto. The materials
of the second carrier plate 21, the second interlayer 22, and the
second glass substrate 23 may be the same as those of the first
carrier plate 11, the first interlayer 12, and the first glass
substrate 13, but they are not limited thereto.
[0029] Then, the step S06 is performed to oppositely place and then
combine the second substrate unit U2 and the first device substrate
E1. However, in the embodiment, before the step S06 of oppositely
placing and then combining the second substrate unit U2 and the
first device substrate E1 is performed, as shown in FIG. 2D, the
method for manufacturing the display device can further comprise:
forming a sealing layer 27 on the outer periphery of the second
glass substrate 23. Here, the sealing layer 27 is a frit and a
pre-sintering process can be performed on the sealing layer 27 for
example by heat energy (e.g. a laser beam, a high temperature of
400.degree. C. to 500.degree. C.), and then the step S06 of
oppositely placing and then combining the second substrate unit U2
and the first device substrate E1 is performed as shown in FIG. 2E.
Here, the second substrate unit U2 is inverted and combined with
the first device substrate E1, and then the sealing layer 27 is
heated from the upper surface of the second carrier plate 21 by
heat energy of higher temperature (e.g. a laser beam, a high
temperature of 500.degree. C. to 800.degree. C.). Thus, as shown in
FIG. 2F, an enclosed space is formed by the sealing layer 27, the
first glass substrate 13, and the second glass substrate 23 (this
is a sintering sealing process), so the first device layer 14 is
located in the enclosed space. Moreover, a linear or planar sealant
structure may exist between the sealing layer 27 and the first
device layer 14, and a linear or planar sealant structure also may
exist between the sealing layer 27 and the fringes of the first
glass substrate 13 or the second glass substrate 23 for sealing or
support. Furthermore, a transparent filler layer may exist between
the first device layer 14, the second glass substrate 23, and the
sealing layer 27. The enclosed space can be filled with the
transparent filler layer to support the height of the space, and
light can penetrate the transparent filler layer. A spacer may
exist between the first device layer 14 and the second glass
substrate 23 for supporting the height of the space.
[0030] Finally, as shown in FIG. 2G, the step S07 is performed to
separate the first glass substrate 13 from the first interlayer 12
and separate the second glass substrate 23 and the second
interlayer 22 to obtain the display device 3. The first interlayer
12 has a first release surface (hydrophobic surface) whose water
contact angle is between 40.degree. and 90.degree., and the
adhesion force between the first interlayer 12 and the first
carrier plate 11 is greater than that between the first interlayer
12 and the first glass substrate 13. Therefore, a knife, for
example, can be inserted between the first interlayer 12 and the
first glass substrate 13 to break the vacuum between the first
interlayer 12 and the first glass substrate 13 so as to separate
the first glass substrate 13 from the first interlayer 12.
Similarly, the second glass substrate 23 is separated from the
second interlayer 22 to obtain the display device 3. Here, the
display device 3 is an OLED display device. The order of the
above-mentioned separation of the first glass substrate 13 from the
first interlayer 12 and the separation of the second glass
substrate 23 from the second interlayer 22 is not limited.
[0031] Accordingly, the above substrate unit (U1, U2), device
substrate (E1) and the display device 3 can be produced using the
existing manufacturing equipment, and the display device 3 can also
meet the large-scale, thin and lightweight requirements. In
addition, subsequent to the step S07, the first carrier plate 11
and the second carrier plate 21 can be recycled for reuse after the
first carrier plate 11 and the first interlayer 12 in FIG. 2G are
separated and the second carrier plate 21 and the second interlayer
22 are separated.
[0032] The display device 3 is further illustrated below with FIG.
2G. The display device 3 includes a first glass substrate 13, a
second glass substrate 23, a first device layer 14 (referred to as
device layer), and a sealing layer 27. Here, the first device layer
14 is disposed between the first glass substrate 13 and the second
glass substrate 23. The sealing layer 27 is disposed between the
first glass substrate 13 and the second glass substrate 23. An
enclosed space is formed by the sealing layer 27, the first glass
substrate 13 and the second glass substrate 23. The first device
layer 14 is disposed in the enclosed space. The thicknesses of the
first glass substrate 13 and the second glass substrate 23 are
respectively between 0.05 mm and 0.3 mm, and the exterior surfaces
of the first glass substrate 13 and the second glass substrate 23
are smooth surfaces without etched dimples. Here, that "the
exterior surfaces of the first glass substrate 13 and the second
glass substrate 23 are smooth surfaces without etched dimples"
indicates that the first glass substrate 13 and the second glass
substrate 23 of the display device 3 are not thinned by
conventional chemical etching method (e.g. chemical thinning by
hydrofluoric acid (HF)) but directly produced by the
above-mentioned steps of the method for manufacturing display
device. Therefore, there are not etched dimples (pits) caused by
the etching process on the surface of the display device 3.
[0033] In the embodiment, the first device layer 14 may include an
OLED unit, the sealing layer 27 may be a frit, and the display
device 3 is an OLED display device. In another embodiment, the
first device layer 14 may include a combination of a TFT device and
a color filter and a plurality of liquid crystal molecules, and the
sealing layer 27 may be a sealant, so the display device 3 is a
liquid crystal display device. In addition, in another embodiment,
the display device 3 may further include an electrode layer (not
shown in figures) which is disposed on an exterior surface of the
second glass substrate 23 away from the first glass substrate 13.
Here, the electrode layer may be a touch electrode layer (including
a drive electrode and a sensing electrode, Tx and Rx). For example,
indium tin oxide (ITO) may be formed on the upper surface of the
second glass substrate 23 by a low temperature process (e.g. less
than 120.degree. C.), so the display device 3 is a display device
with a touch function.
[0034] Moreover, the manufacturing process of the display device
according to the second embodiment is illustrated with FIG. 1 and
FIGS. 3A to 3F. Here, FIGS. 3A to 3F are schematic diagrams of the
manufacturing process of the display device 3a according to the
second embodiment.
[0035] The method for manufacturing the display device 3a is
similar to the above-mentioned steps S01 to S05, so it is not
repeated here. As shown in FIG. 3C, the first device layer 14 of
the embodiment includes a TFT device, and the first device
substrate E1 is a TFT substrate. Moreover, compared with the method
for manufacturing the display device 3, before the step S06 of
oppositely placing and then combining the second substrate unit U2
(not shown in figures) and the first device substrate E1, as shown
in FIG. 3D, the method for manufacturing the display device 3a in
the embodiment can further include: forming a second device layer
24 on the second glass substrate 23 to obtain a second device
substrate E2. Here, the second device layer 24 includes a color
filter, and the second device substrate E2 is a color filter
substrate.
[0036] Then, the step S06 is performed. As shown in FIG. 3E, the
second substrate unit U2 (the second device substrate E2) is
inverted to make the second substrate unit U2 (the second device
substrate E2) and the first device substrate E1 oppositely placed,
and then the second substrate unit U2 (the second device substrate
E2) is combined with the first device substrate E1.
[0037] Finally, as shown in FIG. 3F, the step S07 is performed to
separate the first glass substrate 13 from the first interlayer 12
and separate the second glass substrate 23 from the second
interlayer 22 to obtain the display device 3a. Here, a knife, for
example, can be inserted between the first interlayer 12 and the
first glass substrate 13 to break the vacuum between the first
interlayer 12 and the first glass substrate 13 so as to separate
the first glass substrate 13 from the first interlayer 12.
Similarly, the second glass substrate 23 is also separated from the
second interlayer 22 to obtain the display device 3a. In the
embodiment, the display device 3a is a liquid crystal display
device. Therefore, before the combination of the above-mentioned
step S06, a space on the first device substrate E1 surrounded by a
sealant can be filled with liquid crystal molecules by, for example
but not limited to, one drop filling (ODF), and then the second
device substrate E2 is combined with the first device substrate
E1.
[0038] Moreover, other illustrations of the display device 3a and
the manufacturing method thereof may refer to the corresponding
elements of the above display device 3 and the manufacturing method
thereof, so they are repeated here.
[0039] Moreover, the manufacturing process of the display device
according to the third embodiment is illustrated with FIG. 1 and
FIGS. 4A to 4F. FIGS. 4A to 4F are schematic diagrams of the
manufacturing process of the display device 3b according to the
third embodiment.
[0040] The method for manufacturing the display device 3b similarly
includes the above-mentioned step S01 and step S02. However, before
the step S03 of forming the first device layer 14 on the first
glass substrate 13, as shown in FIG. 4B, the method for
manufacturing the display device 3b further includes: forming a
first function layer 16 on the first carrier plate 11. The first
glass substrate 13 is directly disposed on the first interlayer 12,
the first function layer 16 is disposed on the lateral peripheries
of the first interlayer 12 and the first glass substrate 13. The
first function layer 16 connects the first carrier plate 11 and the
first glass substrate 13. The first function layer 16 can prevent
the reagents in the subsequent processes from seeping into the
interface between the first glass substrate 13 and the first
interlayer 12 and from damaging the function of the first
interlayer 12. Thus, the separation of the first glass substrate 13
and the first interlayer 12 can be easier in the subsequent
processes. Because the distance between edges of the first glass
substrate 13 and the first carrier plate 11 is 1 mm to 2 mm and the
distance between edges of the first interlayer 12 and the first
carrier plate 11 is 2 mm to 5 mm, the first glass substrate 13 and
the first carrier plate 11 may still be attached and cannot be
separated after the high temperature process due to the area of the
first carrier plate 11 not covered by the first interlayer 12.
Therefore, the first function layer 16 is disposed on the lateral
peripheries of the first interlayer 12 and the first glass
substrate 13 and covers the area of the first carrier plate 11 that
is not covered by the first interlayer 12. The viscosity of the
first function layer 16 has to be between 3 and 15 cps to avoid the
effusion to the back of the first carrier plate 11 and avoid
subsequent contamination to equipment. Moreover, the range that the
surface of the first glass substrate 13 is coated with the first
function layer 16 is between 0 .mu.m and 500 .mu.m, which avoids
that the material cannot be filmed on the surface of the first
glass substrate 13 in subsequent device process.
[0041] Later, as shown in FIG. 4C, the step S03 is further
performed to form the first device layer 14 on the first glass
substrate 13 to obtain the first device substrate E1. Similarly,
before forming the second device layer 24 on the second glass
substrate 23, as shown in FIG. 4D, the method for manufacturing the
display device 3b may further include: forming a second function
layer 26 on the second carrier plate 21. The second function layer
26 is disposed on the lateral peripheries of the second interlayer
22 and the second glass substrate 23 to obtain the second device
substrate E2. In the embodiment, the materials of the first
function layer 16 and the second function layer 26 may respectively
be metal, metal oxides, silicon oxides, organosilicon compounds,
organotitanium compounds, organoaluminum compounds, or organic
polymers, and they are not limited thereto.
[0042] Then, the step S06 (FIG. 4E) and the step S07 (FIG. 4F) may
refer to above description, so they are not repeated here. In the
manufacturing process of the display device 3b according to the
embodiment, the first device layer 14 includes a TFT device, the
first device substrate E1 is a TFT substrate, the second device
layer 24 includes a color filter, and the second device substrate
E2 a color filter substrate. Therefore, the display device 3b in
FIG. 4F is a liquid crystal display device.
[0043] In addition, other illustrations of the display device 3b
and the manufacturing method thereof may refer to the corresponding
elements of the above display devices 3, 3a and the manufacturing
methods thereof, so they are repeated here.
[0044] Moreover, the manufacturing process of the display device
according to the fourth embodiment is illustrated with FIG. 1 and
FIGS. 5A to 5F. Here, FIGS. 5A to 5F are schematic diagrams of the
manufacturing process of the display device 3c according to the
fourth embodiment.
[0045] A difference between the methods for manufacturing the
display device 3c and the display device 3b is that, as shown in
FIGS. 5B and 5C, the first function layer 16 covers the lateral
periphery and the upper surface of the first interlayer 12 in the
manufacturing process of the display device 3c, so the first
function layer 16 may be between the first interlayer 12 and the
first glass substrate 13. Similarly, as shown in FIG. 5D, the
second function layer 26 covers the lateral periphery and the upper
surface of the second interlayer 22, and the second function layer
26 may be between the second interlayer 22 and the second glass
substrate 23. Because the step S06 (FIG. 5E) and the step S07 (FIG.
5F) may refer to the above description, they are not repeated here.
In the manufacturing process of the display device 3c according to
the embodiment, the first device layer 14 includes a TFT device,
the first device substrate E1 is a TFT substrate, the second device
layer 24 includes a color filter, and the second device substrate
E2 is a color filter substrate. Therefore, the display device 3c in
FIG. 5F is also a liquid crystal display device.
[0046] Moreover, other illustrations of the display device 3c and
the manufacturing method thereof may refer to the same devices of
the above display devices 3, 3a, 3b and the manufacturing methods
thereof, so they are repeated here.
[0047] Then, the manufacturing process of the display device
according to the fourth embodiment is illustrated with FIG. 6 and
FIGS. 7A to 7D. Here, FIG. 6 is a flow chart of steps of a method
for manufacturing a display device according to another preferred
embodiment, and FIGS. 7A to 7D are schematic diagrams of the
manufacturing process of the display device 3d according to the
fourth embodiment.
[0048] As shown in FIG. 6, the method for manufacturing the display
device according to the fourth embodiment includes the steps P01 to
P09. Because the steps P01 to P06 are the same as the steps S01 to
S06 and they can refer to the above description, they are repeated
here. Accordingly, after the process of the step P01 to the step
P06, the display device 3d according to the fourth embodiment has
the structure as shown in FIG. 7A. Then, as shown in FIG. 7B, the
step P07 is performed to separate the second glass substrate 23
from the second interlayer 22. Here, a knife, for example, can be
inserted between the second glass substrate 23 and the second
interlayer 22 to break the vacuum between the second glass
substrate 23 and the second interlayer 22 so as to separate the
second glass substrate 23 and the second interlayer 22.
[0049] Because the total thickness of Cell according to the
embodiment (0.5t/0.2t/0.2t) is close to the thickness of a product
produced by conventional technology (0.5t/0.5t), a process of
forming a touch electrode (namely touch on display, TOD) can be
directly performed. As shown in FIG. 7C, the step P08 is performed
to form an electrode layer 25 on an exterior surface of the second
glass substrate 23 away from the first glass substrate 13. Here,
the electrode layer 25 is a touch electrode layer (including a
drive electrode and a sensing electrode, Tx and Rx). For example,
ITO is formed on the upper surface of the second glass substrate 23
by a low temperature process (e.g. less than 120.degree. C.). In
this step, if manufacturing the electrode layer 25 is not
successful, the electrode layer 25 can be reworked. Therefore, the
yield rate of product can be improved.
[0050] Finally, as shown in FIG. 7D, the step P09 is further
performed to separate the first glass substrate 13 from the first
interlayer 12 to obtain the display device 3d. Therefore, the
display device 3d according to the embodiment includes the first
glass substrate 13, the first device layer 14, the second glass
substrate 23, the second device layer 24 and the electrode layer
25, and it is a liquid crystal display device with a touch
function.
[0051] In addition, other illustrations of the display device 3d
and the manufacturing method thereof may refer to the corresponding
elements of the above display devices 3, 3a, 3b, 3c and the
manufacturing methods thereof, so they are repeated here.
[0052] It should be noted that the structures and the features of
the first function layer 16 and the second function layer 26 in the
manufacturing process of the display device 3d are the same as
those of the first function layer 16 and the second function layer
26 of the display device 3b. However, in the different embodiment,
the structures and the features of the first function layer 16 and
the second function layer 26 in the manufacturing process of the
display device 3d may also be the same as those in the
manufacturing process of the display device 3c. Moreover, a person
skilled in the art may also apply the step P07 to the step P09 of
the manufacturing process of the display device 3d according to the
fourth embodiment to the display devices 3, 3a, 3b, and 3c so as to
make the display devices 3, 3a, 3b, and 3c have touch functions, so
the process is not repeated here.
[0053] In summary, the method for manufacturing the display device
according to the disclosure includes the steps of: providing a
first carrier plate and forming a first interlayer on the first
carrier plate; disposing a first glass substrate on the first
interlayer to form a first substrate unit; forming a first device
layer on the first glass substrate to obtain a first device
substrate; providing a second carrier plate and forming a second
interlayer on the second carrier plate; disposing a second glass
substrate on the second interlayer to form a second substrate unit;
oppositely placing and then combining the second substrate unit and
the first device substrate; and separating the first glass
substrate from the first interlayer and separating the second glass
substrate from the second interlayer to obtain the display device.
Alternatively, the method further may include the steps of:
separating the second glass substrate from the second interlayer;
forming an electrode layer on an exterior surface of the second
glass substrate away from the first glass substrate; and separating
the first glass substrate from the first interlayer to obtain the
display device. By the manufacturing process mentioned above, the
substrate unit and the display device according to the disclosure
can be produced using the existing manufacturing equipment, and the
display device can meet the large-scale, thin and lightweight
requirements.
[0054] Although the present invention has been described with
reference to specific embodiments, this description is not meant to
be construed in a limiting sense. Various modifications of the
disclosed embodiments, as well as alternative embodiments, will be
apparent to persons skilled in the art. It is, therefore,
contemplated that the appended claims will cover all modifications
that fall within the true scope of the present invention.
* * * * *