U.S. patent application number 15/912028 was filed with the patent office on 2018-12-20 for semiconductor device.
This patent application is currently assigned to Kabushiki Kaisha Toshiba. The applicant listed for this patent is Kabushiki Kaisha Toshiba. Invention is credited to Kentaro Ikeda, Masahiro Koyama, Kazuto Takao.
Application Number | 20180366571 15/912028 |
Document ID | / |
Family ID | 64604931 |
Filed Date | 2018-12-20 |
United States Patent
Application |
20180366571 |
Kind Code |
A1 |
Koyama; Masahiro ; et
al. |
December 20, 2018 |
SEMICONDUCTOR DEVICE
Abstract
A semiconductor device includes a first semiconductor layer of
silicon carbide, a second semiconductor layer of nitride
semiconductor, a third semiconductor layer of nitride semiconductor
and a drain electrode. The semiconductor device includes a source
electrode that has a first projection portion, a conduction
electrode that has a second projection portion and a gate
electrode. The first semiconductor layer includes a first region, a
second region, a third region and a fourth region.
Inventors: |
Koyama; Masahiro;
(Shinagawa, JP) ; Ikeda; Kentaro; (Kawasaki,
JP) ; Takao; Kazuto; (Tsukuba, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Kabushiki Kaisha Toshiba |
Minato-ku |
|
JP |
|
|
Assignee: |
Kabushiki Kaisha Toshiba
Minato-ku
JP
|
Family ID: |
64604931 |
Appl. No.: |
15/912028 |
Filed: |
March 5, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 29/41766 20130101;
H01L 29/4236 20130101; H01L 29/0623 20130101; H01L 29/063 20130101;
H01L 29/36 20130101; H01L 29/2003 20130101; H01L 29/205 20130101;
H01L 29/1608 20130101; H01L 29/7787 20130101; H01L 29/7788
20130101; H01L 29/267 20130101; H01L 29/4966 20130101 |
International
Class: |
H01L 29/778 20060101
H01L029/778; H01L 29/16 20060101 H01L029/16; H01L 29/20 20060101
H01L029/20; H01L 29/205 20060101 H01L029/205; H01L 29/49 20060101
H01L029/49; H01L 29/36 20060101 H01L029/36 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 16, 2017 |
JP |
2017-118990 |
Claims
1: A semiconductor device comprising: a first semiconductor layer
of silicon carbide; a second semiconductor layer of nitride
semiconductor; a third semiconductor layer of nitride semiconductor
provided between the first semiconductor layer and the second
semiconductor layer and contacting with the second semiconductor
layer; a drain electrode provided on a side opposite to a side of
the first semiconductor layer where the third semiconductor layer
exists; a source electrode provided on a first side opposite to a
side of the second semiconductor layer where the third
semiconductor layer exists and having a first projection portion,
the first projection portion penetrating the second semiconductor
layer and the third semiconductor layer, a tip portion of the first
projection portion being located inside the first semiconductor
layer; a conduction electrode provided on the first side of the
second semiconductor layer and having a second projection portion,
the second projection portion penetrating the second semiconductor
layer and the third semiconductor layer, a tip portion of the
second projection portion being located inside the first
semiconductor layer; a gate electrode provided on the first side of
the second semiconductor layer and is provided between the source
electrode and the conduction electrode; and a first insulating
layer provided between the gate electrode and the second
semiconductor layer, wherein the first semiconductor layer
including, a first region of a first conductivity type, a second
region of the first conductivity type provided between the first
region and the drain electrode, a third region of the first
conductivity type provided between the second projection portion of
the conduction electrode and the first region, and a fourth region
of a second conductivity type provided between the third
semiconductor layer and the first region, and between the source
electrode and the conduction electrode.
2: The semiconductor device according to claim 1, wherein the gate
electrode further has a third projection portion, and the third
projection portion of the gate electrode is located inside the
second semiconductor layer.
3: The semiconductor device according to claim 1, further
comprising a second insulating layer provided between the second
projection portion of the conduction electrode and the third
semiconductor layer.
4: The semiconductor device according to claim 1, wherein the third
region further includes a fifth region and a sixth region, and the
fifth region and the sixth region are alternately located in a
direction from the source electrode to the conduction
electrode.
5: The semiconductor device according to claim 1, wherein a
plurality of the fourth regions exist in the first semiconductor
layer on a side opposite to a side where the conduction electrodes
exist with the source electrode interposed therebetween, and a
plurality of fourth regions are separated from each other.
6: The semiconductor device according to claim 1, further
comprising a seventh region being adjacent to the fourth region in
the first semiconductor layer on a side opposite to a side where
the conduction electrodes exist with the source electrode
interposed therebetween.
7: The semiconductor device according to claim 1, wherein the
second semiconductor layer is Al.sub.xGa.sub.(1-x)N
(0<x.ltoreq.1).
8: The semiconductor device according to claim 1, wherein the third
semiconductor layer is GaN.
9: The semiconductor device according to claim 1, wherein the
second semiconductor layer has a bandgap wider than that of the
third semiconductor layer.
10: The semiconductor device according to claim 1, wherein the
first region is n type.
11: The semiconductor device according to claim 1, wherein the
second region and the third region are n type with a concentration
higher than that of the first region.
12: The semiconductor device according to claim 1, wherein the
fourth region is p type.
13: The semiconductor device according to claim 1, wherein an
impurity concentration of the first region is 10.sup.15 cm.sup.-3
or more and 10.sup.17 cm.sup.-3 or less.
14: The semiconductor device according to claim 1, wherein an
impurity concentration of the second region is 10.sup.18 cm.sup.-3
or more and 10.sup.20 cm.sup.-3 or less.
15: The semiconductor device according to claim 1, wherein an
impurity concentration of the third region is 10.sup.18 cm.sup.-3
or more and 10.sup.20 cm.sup.-3 or less.
16: The semiconductor device according to claim 1, wherein an
impurity concentration of the fourth region is 10.sup.15 cm.sup.-3
or more and 10.sup.20 cm.sup.-3 or less.
17: The semiconductor device according to claim 1, wherein the
conduction electrode includes an element selected from Ni, Ti, Al,
and Au.
18: The semiconductor device according to claim 1, wherein the gate
electrode is TiN.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from Japanese Patent Application No. 2017-118990, filed on
Jun. 16, 2017, and the entire contents of which are incorporated
herein by reference.
FIELD
[0002] The embodiment of the present invention relates to a
semiconductor device.
BACKGROUND
[0003] A power semiconductor device is used for a switching circuit
and an inverter circuit for power control.
[0004] Although the power semiconductor device is required to have
a high breakdown voltage and a high carrier mobility, the breakdown
voltage and the carrier mobility of the power semiconductor device
using silicon has reached the limit based on physical
characteristics of Si.
[0005] In recent years, silicon carbide and nitride semiconductors,
which have wider bandgap than Si, are expected to be used widely as
materials of the power semiconductor device.
[0006] A vertical type semiconductor device using silicon carbide
has a high breakdown voltage, but a carrier mobility thereof is
lower than that of the semiconductor device using Si.
[0007] On the other hand, a lateral type semiconductor device
having a heterojunction interface using a nitride semiconductor has
a high carrier mobility exceeding that of Si, but there is a
problem in that it is difficult to allow the lateral type
semiconductor device to have a high breakdown voltage. Therefore, a
power semiconductor device having both a high breakdown voltage and
a high carrier mobility is desired.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1 is a schematic cross-sectional view of a
semiconductor device according to a first embodiment;
[0009] FIG. 2 is a schematic cross-sectional view of a
semiconductor device according to a second embodiment;
[0010] FIG. 3 is a schematic cross-sectional view of a
semiconductor device according to a third embodiment;
[0011] FIGS. 4A and 4B are schematic cross-sectional views of a
semiconductor device according to a fourth embodiment; and
[0012] FIGS. 5A and 5B are schematic cross-sectional views of a
semiconductor device according to a fifth embodiment.
DETAILED DESCRIPTION
[0013] Hereinafter, embodiments of the present invention will be
described with reference to the drawings. The same components are
denoted by the same reference numerals. In addition, the drawings
are schematic or conceptual, and a relationship between the
thickness and the width of each portion, a ratio coefficient of the
size between portions, and the like are not necessarily the same as
the actual ones. In addition, even in the case of representing the
same portions, the dimensions and the ratio coefficients of the
portions may be different from each other depending on the
drawing.
[0014] In this specification, in order to indicate positional
relationships of parts and the like, the upward direction of the
drawings is described as "upper" and the downward direction of the
drawings is described as "lower". In this specification, the
concepts of "upper" and "lower" are not necessarily terms
indicating the relationship with the direction of gravity.
[0015] In this specification, a "GaN-based semiconductor" is a
generic name of gallium nitride (GaN), aluminum nitride (AlN),
indium nitride (InN), and semiconductors having an intermediate
composition thereof.
First Embodiment
[0016] FIG. 1 is a schematic sectional view of a semiconductor
device 100. The semiconductor device 100 is a field effect
transistor (FET) made of a GaN-based semiconductor formed on
silicon carbide (SiC).
[0017] The semiconductor device 100 is a vertical type GaN-based
FET in which a GaN-based semiconductor is formed on SiC. In an
AlGaN/GaN heterointerface above the SiC, a channel through which
carriers flow is formed. This channel electrically conducts with
the SiC through a conduction electrode provided in the
semiconductor device 100. The SiC becomes a drift layer, and thus,
carriers move between the channel of the AlGaN/GaN heterointerface
and the SiC drift layer. The semiconductor device 100 achieves a
high breakdown voltage by the SiC and realizes a high carrier
mobility by the GaN-based semiconductor FET on the SiC. The
semiconductor device 100 includes a first semiconductor layer 1, a
second semiconductor layer 2, a third semiconductor layer 3, a
drain electrode 4, a source electrode 5, a conduction electrode 6,
a gate electrode 7, a first insulating layer 8, and a buffer layer
12. The first semiconductor layer 1 includes a first region 14, a
second region 9, a third region 10, and a fourth region 11.
[0018] The first semiconductor layer 1 is, for example, silicon
carbide (SiC). The thickness of the first semiconductor layer 1 is,
for example, 1 .mu.m or more and 100 .mu.m or less. The first
semiconductor layer 1 includes the first region 14, the second
region 9, the third region 10, and the fourth region 11.
[0019] The second semiconductor layer 2 is a nitride semiconductor.
The second semiconductor layer 2 is, for example, aluminum gallium
nitride (Al.sub.xGa.sub.(1-x)N, 0<x.ltoreq.1). Hereinafter, the
aluminum gallium nitride is denoted by AlGaN. The thickness of the
second semiconductor layer 2 is, for example, 1 nm or more and 100
nm or less.
[0020] The third semiconductor layer 3 is in contact with the
second semiconductor layer 2. The third semiconductor layer 3 is
located between the first semiconductor layer 1 and the second
semiconductor layer 2. The third semiconductor layer 3 is, for
example, gallium nitride (GaN). The third semiconductor layer 3 is
preferably i-GaN which is not intentionally doped with impurities.
For example, the i-GaN has an impurity concentration of 10.sup.17
cm.sup.-3 or less. The thickness of the third semiconductor layer 3
is desirably, for example, 100 nm or more and 10 .mu.m or less.
[0021] The second semiconductor layer 2 is a material having a
bandgap wider than that of the third semiconductor layer 3.
[0022] Since the first semiconductor layer 1 is the SiC and is a
material different from the GaN of the third semiconductor layer 3,
the buffer layer 12 is provided between the first semiconductor
layer 1 and the third semiconductor layer 3. The buffer layer 12 is
a layer for reducing distortion caused by a difference between a
lattice constant of the nitride semiconductor layer formed on the
buffer layer 12 and a lattice constant of the SiC. The material of
the buffer layer 12 include at least aluminum nitride (AlN) or
aluminum gallium nitride (AlGaN). The thickness of the buffer layer
12 is 1 nm or more and 1 .mu.m or less. In order to grow the GaN
with low crystal dislocation on the SiC, the thickness of the
buffer layer is preferably 10 nm or more and 100 nm or less.
[0023] The drain electrode 4 is provided in the first semiconductor
layer 1 on the side opposite to the side of the first semiconductor
layer 1 which is in contact with the third semiconductor layer 3.
The drain electrode 4 is, for example, a metal electrode. The metal
electrode includes an element selected from, for example, nickel
(Ni), titanium (Ti), and aluminum (Al).
[0024] The source electrode 5 is provided on the second
semiconductor layer 2 on the side opposite to the side of the
second semiconductor layer 2 which is in contact with the third
semiconductor layer 3. The source electrode 5 has a projection
portion. The projection portion of the source electrode 5
penetrates the first semiconductor layer 1 and the second
semiconductor layer 2, and the tip of the projection portion is
located inside the third semiconductor layer 3. The source
electrode 5 is, for example, a metal electrode. The metal electrode
includes an element selected from, for example, nickel (Ni),
titanium (Ti), aluminum (Al), and gold (Au).
[0025] The conduction electrode 6 is provided on the second
semiconductor layer 2 on the side opposite to the side of the
second semiconductor layer 2 which is in contact with the third
semiconductor layer 3. The conduction electrode 6 has a projection
portion. The projection portion of the conduction electrode 6
penetrates through the second semiconductor layer 2, the third
semiconductor layer 3, and the buffer layer 12. The tip of the
projection portion of the conduction electrode 6 is located inside
the first semiconductor layer 1. The conduction electrode 6 is, for
example, a metal electrode. The metal electrode includes an element
selected from, for example, nickel (Ni), titanium (Ti), aluminum
(Al), and gold (Au).
[0026] The first gate electrode 7 is located between the source
electrode 5 and the conduction electrode 6 in the direction from
the source electrode 5 to the conduction electrode 6. The first
gate electrode 7 is provided on the side opposite to the side of
the second semiconductor layer 2 which is in contact with the third
semiconductor layer 3 in the stacking direction. The first gate
electrode 7 is, for example, a metal electrode. The first gate
electrode 7 may be a material including an element selected from,
for example, nickel (Ni), titanium (Ti), aluminum (Al), and gold
(Au). Alternatively, the first gate electrode 7 may be a
polycrystalline semiconductor material doped with impurities, for
example, may be silicon, silicon carbide, or gallium nitride. The
first gate electrode 7 may be, for example, TiN.
[0027] The source electrode 5, the conduction electrode 6 and the
first gate electrode 7 are provided on a first side (first plane)
of the second semiconductor layer 2 respectively. The drain
electrode 4 is provided on a second side (second plane) of the
first semiconductor layer 1.
[0028] The first insulating layer 8 is provided between the second
semiconductor layer 2 and the first gate electrode 7. The first
insulating layer 8 is, for example, silicon oxide, silicon nitride,
silicon oxynitride, gallium oxide, aluminum oxide, aluminum
oxynitride, hafnium oxide, zirconium oxide, magnesium oxide, or the
like. Also, nitride and oxynitride of hafnium, zirconium or
magnesium may be used.
[0029] The first region 14 of the first semiconductor layer 1 has a
first conductivity type. The first conductivity type is, for
example, n type with a low doping concentration. The conductivity
type of the first region 14 has an impurity concentration of, for
example, 10.sup.15 cm.sup.-3 or more and 10.sup.17 cm.sup.-3 or
less.
[0030] The second region 9 is provided in the first semiconductor
layer 1 in the vicinity of the interface where the first
semiconductor layer 1 and the drain electrode 4 are in contact with
each other. The second region 9 has a first conductivity type. The
first conductivity type is, for example, n type with a high doping
concentration. The second region 9 has an impurity concentration of
10.sup.18 cm.sup.-3 or more and 10.sup.20 cm.sup.-3 or less. The
thickness of the second region 9 in the direction from the first
semiconductor layer to the drain electrode 4 is, for example, 10
.mu.m or more and 1 mm or less.
[0031] The third region 10 is provided around the projection
portion of the conduction electrode 6. The third region 10 has a
first conductivity type. The first conductivity type of the third
region 10 is, for example, n type with a high doping concentration.
The third region 10 has an impurity concentration of 10.sup.18
cm.sup.-3 or more and 10.sup.20 cm.sup.-3 or less. The thickness of
the third region 10 in the direction from the first semiconductor
layer to the drain electrode 4 is, for example, 10 nm or more and 1
.mu.m or less.
[0032] The fourth region 11 is provided in the first semiconductor
layer 1 on the side where the third semiconductor layer 3 exists in
the direction from the first semiconductor layer 1 to the third
semiconductor layer 3. The fourth region 11 is provided between the
source electrode 5 and the conduction electrode 6 in the direction
from the source electrode 5 to the conduction electrode 6. The
fourth region 11 is provided around the projection portion of the
source electrode 5. The fourth region 11 has a second conductivity
type. The second conductivity type of the fourth region 11 is, for
example, p type. The fourth region 11 has an impurity concentration
of 10.sup.15 cm.sup.-3 or more and 10.sup.20 cm.sup.-3 or less. The
thickness of the fourth region 11 is, for example, 1 .mu.m or more
and 2 .mu.m or less in the direction from the first semiconductor
layer 1 to the third semiconductor layer 3. The thickness of the
fourth region 11 is larger than that of the third region 10. By
providing the fourth region 11, a depletion layer is formed between
the fourth region 11 and the first region 14. The depletion layer
extends in the direction from the fourth region 11 to the first
region 14, so that the breakdown voltage of the semiconductor
device 100 is maintained. For example, the first semiconductor
layer 1 has a crystal orientation of the (0001) plane (Si plane) on
the side where the second semiconductor layer 2 exists. The crystal
orientation may not be perpendicular to the (0001) direction and
may have an off angle. For example, the crystal orientation has an
off angle of 4.degree..
[0033] In the vicinity of the interface between the second
semiconductor layer 2 and the third semiconductor layer 3, a
two-dimensional electron gas layer is formed in the third
semiconductor layer 3. A two-dotted dash line in FIG. 1 indicates
the position where the two-dimensional electron gas layer
exists.
[0034] A channel through which electrons flow is formed in an arrow
direction indicated by a dotted line in FIG. 1. The electrons flow
in the direction from the source electrode 5 to the conduction
electrode 6. In addition, the electrons flow in the direction from
the conduction electrode 6 to the drain electrode 4 through the
first semiconductor layer 1. Since the first semiconductor layer 1
which is the SiC has a high breakdown voltage, a large portion of
the voltage applied to the semiconductor device 100 is applied to
the first semiconductor layer 1 between the conduction electrode 6
and the drain electrode 4.
[0035] The semiconductor device 100 is a normally-on device. A
negative voltage is applied to the gate electrode 7 in order to
stop the electrons from flowing in the channel and turn off the
semiconductor device 100. That is, when a negative voltage is
applied to the gate electrode 7, the band structure of the
interface between the second semiconductor layer 2 and the third
semiconductor layer 3 is raised, and the two-dimensional electron
gas layer is depleted. Therefore, it is possible to stop the
electrons from flowing in the channel of the third semiconductor
layer 3.
[0036] The voltage applied to the gate electrode 7 allowing
electrons in the two-dimensional electron gas layer to flow is
determined by a work function of a metal constituting the gate
electrode 7, a dielectric constant of the first insulating layer 8,
a thickness of the first insulating layer 8, concentrations of
donors and acceptors contained in the third semiconductor layer 3,
and a surface potential of the third semiconductor layer 3.
[0037] According to the embodiment, a semiconductor device that is
compatible with a high breakdown voltage and a high carrier
mobility is obtained.
[0038] As described above, in the semiconductor device 100
according to this embodiment, a channel is formed between the
source electrode 5 and the conduction electrode 6 at the AlGaN/GaN
heterointerface above the SiC substrate. Electrons flow from the
source electrode 5 to the conduction electrode 6, and the electrons
further flow from the conduction electrode 6 to the drain electrode
4 through the first semiconductor layer 1 which is the SiC. In the
semiconductor device 100, a high breakdown voltage is realized by
the first semiconductor layer 1 which is the SiC, and a high
carrier mobility is realized by the GaN-based semiconductor FET on
the first semiconductor layer 1. Hereinafter, a method of
manufacturing the semiconductor device 100 will be described.
[0039] First, a preparation process of the second region 9 which is
the SiC is performed. Next, an epitaxial growth layer forming
process is performed. In this process, a SiC layer which is the
first region 14 is formed on the (0001) plane of the second region
9 by epitaxial growth. Next, an ion implantation process is
performed. In this process, p type impurities are implanted into
the SiC layer, and thus, the fourth region 11 is formed. The p type
impurities to be ion-implanted are, for example, aluminum (Al) or
boron (B). Next, n type impurities are implanted into the SiC
layer, and thus, the third region 10 having a high doping
concentration is formed. The n type impurities to be ion-implanted
are, for example, phosphorus (P) or nitrogen (N). Next, an impurity
activation annealing process is performed. By heating the first
semiconductor layer 1 at a high temperature, desired carriers are
generated in the impurity region.
[0040] Next, a process of forming the buffer layer 12 made of
aluminum nitride (AlN) or aluminum gallium nitride (AlGaN) is
performed on the first semiconductor layer 1. The buffer layer 12
is formed, for example, by sputtering. Next, an epitaxial growth
process of the third semiconductor layer 3 and the second
semiconductor layer 2, which are nitride semiconductors, is
performed on the buffer layer 12. Next, a process of forming the
insulating layer 8 is performed. Then, a process of forming the
gate electrode 7 is performed. Next, a process of forming a
projection portion for burying the source electrode 5 and the
conduction electrode 6 in the nitride semiconductor layer is
performed. The process is performed by, for example, reactive ion
etching. Next, a process of forming the source electrode 5 and the
conduction electrode 6 is performed. Furthermore, in the stacking
direction, the drain electrode 4 is formed on the side opposite to
the side of the first semiconductor layer 1 where the buffer layer
12 exists by, for example, sputtering.
Second Embodiment
[0041] FIG. 2 illustrates a semiconductor device 101.
[0042] The same components as those of the semiconductor device 100
in FIG. 1 are denoted by the same reference numerals, and
description thereof is omitted.
[0043] The gate electrode 7 has a projection portion. The
projection portion of the gate electrode 7 is located inside the
second semiconductor layer 2, and the projection portion reaches
the third semiconductor layer 3.
[0044] Between the projection portion of the gate electrode 7 and
the third semiconductor layer 3, the second semiconductor layer 2
is not exist or may exist as long as the thickness is such that a
two-dimensional electron gas layer is not induced. For this reason,
a two-dimensional electron gas layer does not exist in the third
semiconductor layer 3 that is located at the position of the gate
electrode 7. Therefore, in the state where no voltage is applied to
the gate electrode 7, no electron flows in the channel.
Accordingly, the semiconductor device 101 is a normally-off
device.
[0045] In the vicinity of the interface between the second
semiconductor layer 2 and the third semiconductor layer 3, there is
a two-dimensional electron gas layer in the third semiconductor
layer 3 excluding the position where the gate electrode 7 exists. A
two-dotted dash line in FIG. 2 indicates the position where the
two-dimensional electron gas layer exists.
[0046] Since the third semiconductor layer 3 is an i-GaN which is
not intentionally doped with impurities, the third semiconductor
layer 3 exhibits n type conduction with a low impurity
concentration. In a case where a positive voltage is applied to the
gate electrode 7, the third semiconductor layer 3 on the gate
electrode 7 side is in an accumulation state where electrons are
induced. Therefore, the electrons induced in the accumulation state
are connected to the two-dimensional electron gas layer existing at
the interface between the second semiconductor layer 2 and the
third semiconductor layer 3. Therefore, the electrons flow in the
arrow direction indicated by a dotted line in FIG. 2. Accordingly,
the semiconductor device 101 operates as an FET.
[0047] In the semiconductor device 101, since the projection
portion of the gate electrode 7 is buried in the second
semiconductor layer 2, the concentration of electrons in the
two-dimensional electron gas layer included in the semiconductor
layer 3 at the position of the gate electrode 7 decreases as
compared with the semiconductor device 100 of FIG. 1. For this
reason, the threshold voltage shifts to the positive direction.
Therefore, the semiconductor device 101 performs a normally-off
operation that has a positive threshold voltage. Accordingly, the
semiconductor device 101 is a normally-off device realizing a high
breakdown voltage by the first semiconductor layer 1 which is the
SiC and a high carrier mobility by the GaN-based semiconductor FET
on the first semiconductor layer 1.
Third Embodiment
[0048] FIG. 3 illustrates a semiconductor device 102.
[0049] The same components as those of the semiconductor device 100
in FIG. 1 are denoted by the same reference numerals, and
description thereof is omitted.
[0050] The semiconductor device 102 further includes a second
insulating layer 13 between the projection portion of the
conduction electrode 6 and the third semiconductor layer 3 and
between the projection portion of the conduction electrode 6 and
the buffer layer 12.
[0051] The second insulating layer 13 is made of, for example,
silicon oxide, silicon nitride, silicon oxynitride, gallium oxide,
aluminum oxide, aluminum oxynitride, hafnium oxide, zirconium
oxide, magnesium oxide, or the like. Also, nitride and oxynitride
of hafnium, zirconium or magnesium may be used.
[0052] By providing the second insulating layer 13 between the
conduction electrode 6 and the third semiconductor layer 3 and
between the conduction electrode 6 and the buffer layer 12, it is
possible to prevent the conduction electrode 6 from electrically
conducting with a portion other than the portion of the third
semiconductor layer 3 which is to be a channel, and further, it is
possible to prevent the conduction electrode 6 from electrically
conducting with the buffer layer 12. Therefore, the conduction
electrode 6 electrically conducts only with the channel portion of
the third semiconductor layer 3.
[0053] Alternatively, instead of the second insulating layer 13
described above, there is a method of manufacturing an insulating
region by implanting ions into the third semiconductor layer 3 and
the buffer layer 12 in the vicinity of the conduction electrode 6.
The elements used for ion implantation are, for example, argon (Ar)
and fluorine (F). By implanting ions into the third semiconductor
layer 3 and the buffer layer 12 in the vicinity of the conduction
electrode 6, the third semiconductor layer 3 and the buffer layer
12 in the vicinity of the conduction electrode 6 can be allowed to
have an insulating property. The third semiconductor layer 3 and
the buffer layer 12 in the vicinity of the conduction electrode 6,
which are ion-implanted to have an insulating property, can be used
as the second insulating layer 13.
[0054] Accordingly, the conduction electrode 6 is prevented from
electrically conducting with a portion other than the portion of
the third semiconductor layer 3 that becomes a channel, and
further, the conduction electrode 6 is prevented from electrically
conducting with the buffer layer 12. Therefore, it is possible to
prevent the carriers passing through the conduction electrode 6
from leaking into the buffer layer 12 and a portion of the third
semiconductor layer 3 that is not channel. Accordingly, in the
semiconductor device 102, the leakage of carriers from the
conduction electrode 6 is suppressed, and thus, a high breakdown
voltage by the first semiconductor layer 1 which is the SiC and a
high carrier mobility by the GaN-based semiconductor FET are
realized.
[0055] Even if the second insulating layer 13 is used for the
semiconductor device 101 according to the second embodiment, the
leakage of carriers of the conduction electrode 6 can be
prevented.
Fourth Embodiment
[0056] FIG. 4A illustrates a semiconductor device 103, and FIG. 4B
illustrates an enlarged view of a portion enclosed by a dotted line
in FIG. 4A.
[0057] The same components as those of the semiconductor device 100
in FIG. 1 are denoted by the same reference numerals, and
description thereof is omitted.
[0058] In the third region 10 of FIG. 4B, the fifth region 10a
having a first conductivity type and the sixth region 10b having a
second conductivity type are alternately located in the direction
(lateral direction) from the source electrode 5 to the conduction
electrode 6.
[0059] In the direction from the source electrode 5 to the
conduction electrode 6, the length of the fifth region 10a is, for
example, 10 nm or more and 1 .mu.m or less, and the length of the
sixth region 10b is, for example, 10 nm or more and 1 .mu.m or
less.
[0060] The first conductivity type of the fifth region 10a is, for
example, n type doped with a high concentration. The second
conductivity type of the sixth region 10b is, for example, p
type.
[0061] The interface between the n type first region 14 having a
low doping concentration and the p type sixth region 10b has a pn
junction. In a case where no voltage is applied to the gate
electrode 7, a depletion layer exists in the pn junction at the
interface between the first region 14 and the sixth region 10b.
Therefore, depletion layers between the first region 14 and the
sixth regions 10b are connected to each other, and a depletion
layer exists in the first region 14 around the third region 10.
[0062] In a case where no voltage is applied to the gate electrode
7, electric field concentration tends to occur at the tip of the
projection portion of the conduction electrode 6, that is, the
projection portion of the conduction electrode 6 surrounded by the
third region 10. Herein, since the depletion layer exists in the
first region 14 around the third region 10, the load of electric
field concentration is distributed over the entire depletion layer,
so that it is possible to prevent the crystal of the first
semiconductor layer 1 from being destroyed. Therefore, the
semiconductor device 103 can improve the breakdown voltage of the
first semiconductor layer 1, and thus, a high breakdown voltage of
the first semiconductor layer 1 which is the SiC and a high carrier
mobility by the GaN-based semiconductor FET are realized.
[0063] In addition, it is possible to improve the breakdown voltage
of the first semiconductor layer 1 by using the third region 10 of
this embodiment for the semiconductor devices 101 and 102 in the
second and third embodiments.
Fifth Embodiment
[0064] FIG. 5A illustrates a semiconductor device 104 and FIG. 5B
illustrates a semiconductor device 105.
[0065] The same components as those of the semiconductor device 100
in FIG. 1 are denoted by the same reference numerals, and
description thereof is omitted.
[0066] The semiconductor device 104 of FIG. 5A includes a plurality
of the fourth regions 11 separated from each other in the first
semiconductor layer 1.
[0067] The fourth regions 11 are located on the side opposite to
the side of the first semiconductor layer 1 where the second region
9 exists. The fourth regions 11 are located on the side opposite to
the side where the conduction electrode 6 exists as viewed from the
source electrode 5. The first semiconductor layer 1 on the side
opposite to the side where the conduction electrode 6 exists as
viewed from the source electrode 5, becomes a terminated end
portion of the semiconductor device 104. A plurality of the fourth
regions 11 are separated from each other with the first region 14
interposed therebetween. The fourth regions 11 are formed by
implanting ions into the first semiconductor layer 1. The thickness
of the fourth regions 11 in the direction from the first
semiconductor layer 1 to the drain electrode 4 is, for example, 1
.mu.m or more and 2 .mu.m or less. The fourth regions 11 are guard
ring layers. At a position close to the source electrode 5, a
plurality of the fourth regions 11 exist at narrow intervals. At a
position away from the source electrode 5, a plurality of the
fourth regions 11 exist at wide intervals. Besides, as described
before, the fourth regions 11 of this embodiment are the second
conductivity type, that is, p type. The fourth regions 11 have an
impurity concentration of 10.sup.15 cm.sup.-3 or more and 10.sup.20
cm.sup.-3 or less.
[0068] A plurality of the fourth regions 11 are located not only on
the side of the first semiconductor layer 1 where the third
semiconductor layer 3 exists but also at the terminated end portion
of the semiconductor device 104. Therefore, it is possible to
extend the depletion layer in the direction from the conduction
electrode 6 to the source electrode 5, on the side opposite to the
side of the first semiconductor layer 1 where the drain electrode 4
exists. Thus, it is possible to prevent an electric field from
being concentrated on the terminated end portion of the
semiconductor device 104. In addition, a current of the source
electrode and a current of the channel are prevented from leaking
into the first semiconductor layer 1 and other devices.
[0069] The semiconductor device 105 of FIG. 5B includes a seventh
region 15 which is p type with a low impurity concentration,
adjacent to the fourth region 11.
[0070] The seventh region 15 is on the side opposite to the side of
the first semiconductor layer 1 where the drain electrode 4 exists.
The seventh region 15 is located on the side opposite to the side
where the conduction electrode 6 exists as viewed from the source
electrode 5. In the first semiconductor layer 1, the seventh region
15 is located adjacent to the fourth region 11. The seventh region
15 contains impurities having a second conductivity type having a
concentration lower than that of the fourth region 11. The second
conductivity type is, for example, p type. The seventh region 15 is
a reduced surface field (RESURF) layer.
[0071] The seventh region 15 is located adjacent to the fourth
region 11, so that it is possible to extend the depletion layer in
the direction from the conduction electrode 6 to the source
electrode 5, on the side opposite to the side of the n type first
region 14 where the drain electrode 4 exists. Therefore, it is
possible to prevent an electric field from being concentrated on
the terminated end portion of the semiconductor device 105.
Accordingly, it is possible to improve the breakdown voltage of the
first semiconductor layer 1.
[0072] Even when the fourth regions 11 and the seventh region 15
are provided in the above-described semiconductor devices 100 to
103, the same effect can be obtained.
[0073] While several embodiments of the present invention have been
described, these embodiments have been provided by way of examples
and are not intended to limit the scope of the invention. These
embodiments can be implemented in various other forms, and various
omissions, substitutions, and changes can be made without departing
from the spirit of the invention. These embodiments and
modifications thereof are included in the invention described in
the claims and equivalents thereof as well as being included in the
scope and spirit of the description.
* * * * *