U.S. patent application number 15/621305 was filed with the patent office on 2018-12-13 for germanium-based barrier modulated cell.
This patent application is currently assigned to SANDISK TECHNOLOGIES LLC. The applicant listed for this patent is SANDISK TECHNOLOGIES LLC. Invention is credited to Deepak Kamalanathan, Juan Saenz.
Application Number | 20180358550 15/621305 |
Document ID | / |
Family ID | 64535803 |
Filed Date | 2018-12-13 |
United States Patent
Application |
20180358550 |
Kind Code |
A1 |
Kamalanathan; Deepak ; et
al. |
December 13, 2018 |
GERMANIUM-BASED BARRIER MODULATED CELL
Abstract
Systems and methods for providing a Barrier Modulated Cell (BMC)
structure with reduced shifting in stored memory cell resistance
levels over time are described. The BMC structure may comprise a
reversible resistance-switching memory element within a memory
array comprising a first conductive metal oxide (e.g., titanium
oxide) in series with an alternating stack of one or more layers of
an amorphous low bandgap material (e.g., germanium) with one or
more layers of a second conductive metal oxide (e.g., aluminum
oxide). The BMC structure may include a barrier layer comprising a
first conductive metal oxide, such as titanium oxide or strontium
titanate, in series with a germanium stack that includes a layer of
amorphous germanium or amorphous silicon germanium paired with a
second conductive metal oxide. The second conductive metal oxide
(e.g., aluminum oxide) may be different from the first conductive
metal oxide (e.g., titanium oxide).
Inventors: |
Kamalanathan; Deepak; (San
Jose, CA) ; Saenz; Juan; (Menlo Park, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SANDISK TECHNOLOGIES LLC |
Plano |
TX |
US |
|
|
Assignee: |
SANDISK TECHNOLOGIES LLC
Plano
TX
|
Family ID: |
64535803 |
Appl. No.: |
15/621305 |
Filed: |
June 13, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/2454 20130101;
H01L 45/1233 20130101; H01L 45/1226 20130101; H01L 45/08 20130101;
H01L 27/249 20130101; H01L 45/04 20130101; H01L 27/2481 20130101;
H01L 45/146 20130101; H01L 45/1683 20130101 |
International
Class: |
H01L 45/00 20060101
H01L045/00; H01L 27/24 20060101 H01L027/24 |
Claims
1. A memory structure, comprising: a bit line; a word line; and a
memory cell arranged between the word line and the bit line, the
memory cell includes a first conductive metal oxide in series with
an alternating stack of one or more layers of germanium with one or
more layers of a second conductive metal oxide different from the
first conductive metal oxide, the first conductive metal oxide
comprises titanium oxide and the second conductive metal oxide
comprises aluminum oxide, a second metal of the second conductive
metal oxide has a greater affinity for oxygen compared with a first
metal of the first conductive metal oxide.
2. (canceled)
3. (canceled)
4. The memory structure of claim 1, wherein: the alternating stack
of the one or more layers of germanium with the one or more layers
of the second conductive metal oxide comprises a first layer of
germanium adjacent to a first layer of the second conductive metal
oxide.
5. The memory structure of claim 4, wherein: the word line directly
connects to the second conductive metal oxide; and the bit line
connects to the first conductive metal oxide.
6. The memory structure of claim 4, wherein: the alternating stack
of the one or more layers of germanium with the one or more layers
of the second conductive metal oxide comprises the first layer of
germanium adjacent to the first layer of the second conductive
metal oxide and a second layer of germanium adjacent to the first
layer of the second conductive metal oxide.
7. The memory structure of claim 6, wherein: the word line directly
connects to the second layer of germanium; and the bit line
connects to the first conductive metal oxide.
8. The memory structure of claim 4, wherein: a thickness of the
first layer of germanium is greater than a thickness of the first
layer of the second conductive metal oxide.
9. The memory structure of claim 4, wherein: the alternating stack
of the one or more layers of germanium with the one or more layers
of the second conductive metal oxide comprises the first layer of
germanium adjacent to the first layer of the second conductive
metal oxide, a second layer of germanium adjacent to the first
layer of the second conductive metal oxide, and a second layer of
the second conductive metal oxide adjacent to the second layer of
germanium.
10. The memory structure of claim 1, further comprising: a second
memory cell arranged between a second word line and the bit line,
the second word line is arranged above the word line, the second
memory cell includes a third conductive metal oxide in series with
an alternating stack of one or more layers of germanium with one or
more layers of a fourth conductive metal oxide different from the
third conductive metal oxide.
11. The memory structure of claim 1, wherein: the memory cell
comprises a multi-level memory cell; and the bit line comprises a
vertical bit line arranged orthogonal to a surface of a
substrate.
12. An apparatus, comprising: a memory array including a word line
and a bit line, the memory array includes a memory cell arranged
between the word line and the bit line, the memory cell comprises a
first conductive metal oxide of a first metal adjacent to a layer
of a germanium-metal alloy of a second metal adjacent to a first
layer of the second metal, the second metal is different from the
first metal, the first metal comprises titanium and the second
metal comprises aluminum, the second metal has a greater affinity
for oxygen compared with the first metal; and one or more control
circuits configured to bias the word line and the bit line during a
memory operation.
13. (canceled)
14. (canceled)
15. The apparatus of claim 12, wherein: the memory operation
comprises a read operation; the first conductive metal oxide
comprises titanium dioxide; and the layer of the germanium-metal
alloy of the second metal is arranged between the first conductive
metal oxide of the first metal and the first layer of the second
metal.
16. The apparatus of claim 12, wherein: the memory cell comprises a
multi-level memory cell; and the bit line comprises a vertical bit
line arranged orthogonal to a surface of a substrate.
17.-20. (canceled)
Description
BACKGROUND
[0001] Semiconductor memory is widely used in various electronic
devices such as mobile computing devices, mobile phones,
solid-state drives, digital cameras, personal digital assistants,
medical electronics, servers, and non-mobile computing devices.
Semiconductor memory may comprise non-volatile memory or volatile
memory. A non-volatile memory device allows information to be
stored or retained even when the non-volatile memory device is not
connected to a source of power (e.g., a battery). Examples of
non-volatile memory include flash memory (e.g., NAND-type and
NOR-type flash memory), Electrically Erasable Programmable
Read-Only Memory (EEPROM), ferroelectric memory (e.g., FeRAM),
magnetoresistive memory (e.g., MRAM), and phase change memory
(e.g., PRAM). In recent years, non-volatile memory devices have
been scaled in order to reduce the cost per bit. However, as
process geometries shrink, many design and process challenges are
presented. These challenges include increased variability in memory
cell I-V characteristics over process, voltage, and temperature
variations and increased leakage currents through unselected memory
cells.
BRIEF DESCRIPTION OF THE DRAWINGS
[0002] FIGS. 1A-1F depict various embodiments of a memory
system.
[0003] FIGS. 2-3 depict various embodiments of a portion of a
three-dimensional memory array.
[0004] FIGS. 4A-4B depict various embodiments of a portion of a
three-dimensional memory array.
[0005] FIG. 5 depicts one embodiment of a read/write circuit.
[0006] FIG. 6A depicts a cross-sectional view of a memory structure
with vertical bit lines.
[0007] FIGS. 6B-6E depict various embodiments of a BMC structure
that includes a layer of germanium or silicon germanium in series
with two or more conductive metal oxides.
[0008] FIGS. 6F-6K depict various reversible resistance-switching
BMC structures.
[0009] FIGS. 7A-7D depict various embodiments of processes for
forming portions of a memory array.
[0010] FIG. 8 depicts a flowchart describing an embodiment of a
process for forming portions of a memory array.
DETAILED DESCRIPTION
[0011] Technology is described for providing a Barrier Modulated
Cell (BMC) structure with reduced shifting in stored memory cell
resistance levels over time, thereby increasing data retention and
reducing read and write disturb. The BMC structure may comprise a
reversible resistance-switching memory element within a memory
array comprising a first conductive metal oxide (e.g., titanium
oxide) in series with an alternating stack of one or more layers of
an amorphous low bandgap material (e.g., germanium) with one or
more layers of a second conductive metal oxide (e.g., aluminum
oxide). The low bandgap material may comprise a semiconductor
material with a bandgap energy (Eg) less than 1.0 eV at room
temperature or less than that of silicon, which is close to 1.12 eV
at room temperature (e.g., 300K). In some embodiments, the BMC
structure may include a barrier layer comprising a first conductive
metal oxide, such as titanium oxide (TiO2) or strontium titanate
(SrTiO3), in series with a germanium stack that includes a layer of
amorphous germanium or amorphous silicon germanium paired with a
second conductive metal oxide. The second conductive metal oxide
(e.g., aluminum oxide) may be different from the first conductive
metal oxide (e.g., titanium oxide). The thickness of the layer of
amorphous germanium or amorphous silicon germanium or the distance
between the barrier layer and the second conductive metal oxide may
be less than a threshold distance (e.g., less than 2 nm). The
thickness of the layer of amorphous germanium or amorphous silicon
germanium (e.g., 3 nm) may be greater than the thickness of the
second conductive metal oxide (e.g., 1 nm).
[0012] One benefit of using a BMC structure with a barrier layer
comprising a layer of titanium oxide in series with a germanium
stack comprising an alternating stack of one or more layers of
amorphous germanium or amorphous silicon germanium with one or more
layers of aluminum oxide is that the movement of oxygen vacancies
or drifting of oxygen from the germanium stack towards the barrier
layer after a RESET operation has been performed on the BMC
structure may be reduced because aluminum has a greater affinity
for oxygen compared with titanium. The reduction in the movement of
oxygen vacancies may lead to a reduction in the amount of
unintended shifting of a stored high resistance RESET state towards
a lower resistance SET state. With improved data retention, the BMC
structure may be used for providing multi-level memory elements
within a memory array.
[0013] In some embodiments, the germanium stack in series with the
barrier layer may comprise an alternating stack of one or more
layers of amorphous germanium or amorphous silicon germanium with
one or more layers of a metal oxide, such as titanium oxide or
aluminum oxide. For example, the germanium stack may comprise a
first layer of amorphous germanium that is positioned above a first
layer of aluminum oxide that is positioned above a second layer of
amorphous germanium that is positioned above a second layer of
aluminum oxide. The thickness of the first layer of amorphous
germanium separating the barrier layer from the first layer of
aluminum oxide may be less than 2 nm and may be greater than the
thickness of the first layer of aluminum oxide. The first layer of
aluminum oxide may have a thickness ranging between 0.3 nm to 1
nm.
[0014] In some embodiments, the BMC structure may include a barrier
layer comprising a layer of titanium oxide (TiO2) or strontium
titanate (SrTiO3) in series with a germanium-metal alloy, such as
germanium doped with aluminum, hafnium, or zirconium. The germanium
layer may also be uniformly doped with silicon or other
semiconducting material. Thus, rather than forming or arranging
layers of aluminum oxide or another metal oxide within the
germanium stack, the germanium layer itself may be uniformly doped
with aluminum, titanium, or another metal.
[0015] In some embodiments, the BMC structure may be partially or
fully embedded within a word line layer of a memory array, such as
a memory array arranged using a Vertical Bit Line (VBL)
architecture (e.g., a memory array architecture in which memory
cells are arranged between horizontal word lines and vertical bit
lines that are orthogonal to a substrate). The BMC structure may be
partially or fully formed within a word line layer of a memory
array. In some cases, the BMC structure may be partially or fully
formed between word line layers within a memory array.
[0016] One issue with integrating a BMC structure within a memory
array is that the thickness of the layers within the BMC structure
required for reliable memory cell switching may limit the ability
to scale or shrink the memory array (e.g., the layer of amorphous
germanium may have to be at least 5 nm and/or the layer of titanium
oxide may have to be at least 5 nm). Partially or fully embedding a
BMC structure (or other memory cell switching structure, such as a
ReRAM material structure) into a recessed portion of a word line
layer may allow for a reduction in die area and may improve the
reliability of the memory cell structures (e.g., by providing
improved isolation between BMC structures).
[0017] In some embodiments, a memory array may comprise a
cross-point memory array. A cross-point memory array may refer to a
memory array in which two-terminal memory cells are placed at the
intersections of a first set of control lines (e.g., word lines)
arranged in a first direction and a second set of control lines
(e.g., bit lines) arranged in a second direction perpendicular to
the first direction. In some cases, each memory cell in a
cross-point memory array may be placed in series with a steering
element or an isolation element, such as a diode, in order to
reduce leakage currents. In cross-point memory arrays where the
memory cells do not include an isolation element, controlling and
minimizing leakage currents may be a significant issue, especially
since leakage currents may vary greatly over biasing voltage and
temperature.
[0018] In one embodiment, a non-volatile storage system may include
one or more two-dimensional arrays of non-volatile memory cells.
The memory cells within a two-dimensional memory array may form a
single layer of memory cells and may be selected via control lines
(e.g., word lines and bit lines) in the X and Y directions. In
another embodiment, a non-volatile storage system may include one
or more monolithic three-dimensional memory arrays in which two or
more layers of memory cells may be formed above a single substrate
without any intervening substrates. In some cases, a
three-dimensional memory array may include one or more vertical
columns of memory cells located above and orthogonal to a
substrate. In one example, a non-volatile storage system may
include a memory array with vertical bit lines or bit lines that
are arranged orthogonal to a semiconductor substrate. The substrate
may comprise a silicon substrate. The memory array may include
rewriteable non-volatile memory cells, wherein each memory cell
includes a reversible resistance-switching element without an
isolation element in series with the reversible
resistance-switching element (e.g., no diode in series with the
reversible resistance-switching element).
[0019] In some embodiments, a non-volatile storage system may
include a non-volatile memory that is monolithically formed in one
or more physical levels of arrays of memory cells having an active
area disposed above a silicon substrate. The non-volatile storage
system may also include circuitry associated with the operation of
the memory cells (e.g., decoders, state machines, page registers,
or control circuitry for controlling the reading and/or programming
of the memory cells). The circuitry associated with the operation
of the memory cells may be located above the substrate or located
within the substrate.
[0020] In some embodiments, a non-volatile storage system may
include a monolithic three-dimensional memory array. The monolithic
three-dimensional memory array may include one or more levels of
memory cells. Each memory cell within a first level of the one or
more levels of memory cells may include an active area that is
located above a substrate (e.g., a single-crystal substrate or a
crystalline silicon substrate). In one example, the active area may
include a semiconductor junction (e.g., a P-N junction). The active
area may include a portion of a source or drain region of a
transistor. In another example, the active area may include a
channel region of a transistor.
[0021] In one embodiment, the memory cells within a memory array
may comprise re-writable non-volatile memory cells including a
reversible resistance-switching element. A reversible
resistance-switching element may include a reversible
resistivity-switching material having a resistivity that may be
reversibly switched between two or more states. In one embodiment,
the reversible resistance-switching material may include a metal
oxide (e.g., a binary metal oxide). The metal oxide may include
nickel oxide or hafnium oxide. In another embodiment, the
reversible resistance-switching material may include a phase change
material. The phase change material may include a chalcogenide
material. In some cases, the re-writeable non-volatile memory cells
may comprise resistive RAM (ReRAM) memory cells. In other cases,
the re-writeable non-volatile memory cells may comprise conductive
bridge memory cells or programmable metallization memory cells.
[0022] FIG. 1A depicts one embodiment of a memory system 101 and a
host 106. The memory system 101 may comprise a non-volatile storage
system interfacing with the host (e.g., a mobile computing device
or a server). In some cases, the memory system 101 may be embedded
within the host 106. As examples, the memory system 101 may
comprise a memory card, a solid-state drive (SSD) such a high
density MLC SSD (e.g., 2-bits/cell or 3-bits/cell) or a high
performance SLC SSD, or a hybrid HDD/SSD drive. As depicted, the
memory system 101 includes a memory chip controller 105 and a
memory chip 102. The memory chip 102 may include volatile memory
and/or non-volatile memory. Although a single memory chip is
depicted, the memory system 101 may include more than one memory
chip (e.g., four or eight memory chips). The memory chip controller
105 may receive data and commands from host 106 and provide memory
chip data to host 106. The memory chip controller 105 may include
one or more state machines, page registers, SRAM, and control
circuitry for controlling the operation of memory chip 102. The one
or more state machines, page registers, SRAM, and control circuitry
for controlling the operation of the memory chip may be referred to
as managing or control circuits. The managing or control circuits
may facilitate one or more memory array operations including
forming, erasing, programming, or reading operations.
[0023] In some embodiments, the managing or control circuits (or a
portion of the managing or control circuits) for facilitating one
or more memory array operations may be integrated within the memory
chip 102. The memory chip controller 105 and memory chip 102 may be
arranged on a single integrated circuit or arranged on a single
die. In other embodiments, the memory chip controller 105 and
memory chip 102 may be arranged on different integrated circuits.
In some cases, the memory chip controller 105 and memory chip 102
may be integrated on a system board, logic board, or a PCB.
[0024] The memory chip 102 includes memory core control circuits
104 and a memory core 103. Memory core control circuits 104 may
include logic for controlling the selection of memory blocks (or
arrays) within memory core 103, controlling the generation of
voltage references for biasing a particular memory array into a
read or write state, and generating row and column addresses. The
memory core 103 may include one or more two-dimensional arrays of
memory cells or one or more three-dimensional arrays of memory
cells. In one embodiment, the memory core control circuits 104 and
memory core 103 may be arranged on a single integrated circuit. In
other embodiments, the memory core control circuits 104 (or a
portion of the memory core control circuits) and memory core 103
may be arranged on different integrated circuits.
[0025] Referring to FIG. 1A, a memory operation may be initiated
when host 106 sends instructions to memory chip controller 105
indicating that it would like to read data from memory system 101
or write data to memory system 101. In the event of a write (or
programming) operation, host 106 may send to memory chip controller
105 both a write command and the data to be written. The data to be
written may be buffered by memory chip controller 105 and error
correcting code (ECC) data may be generated corresponding with the
data to be written. The ECC data, which allows data errors that
occur during transmission or storage to be detected and/or
corrected, may be written to memory core 103 or stored in
non-volatile memory within memory chip controller 105. In one
embodiment, the ECC data is generated and data errors are corrected
by circuitry within memory chip controller 105.
[0026] Referring to FIG. 1A, the operation of memory chip 102 may
be controlled by memory chip controller 105. In one example, before
issuing a write operation to memory chip 102, memory chip
controller 105 may check a status register to make sure that memory
chip 102 is able to accept the data to be written. In another
example, before issuing a read operation to memory chip 102, memory
chip controller 105 may pre-read overhead information associated
with the data to be read. The overhead information may include ECC
data associated with the data to be read or a redirection pointer
to a new memory location within memory chip 102 in which to read
the data requested. Once a read or write operation is initiated by
memory chip controller 105, memory core control circuits 104 may
generate the appropriate bias voltages for word lines and bit lines
within memory core 103, as well as generate the appropriate memory
block, row, and column addresses.
[0027] In some embodiments, one or more managing or control
circuits may be used for controlling the operation of a memory
array within the memory core 103. The one or more managing or
control circuits may provide control signals to a memory array in
order to perform a read operation and/or a write operation on the
memory array. In one example, the one or more managing or control
circuits may include any one of or a combination of control
circuitry, state machines, decoders, sense amplifiers, read/write
circuits, and/or controllers. The one or more managing circuits may
perform or facilitate one or more memory array operations including
erasing, programming, or reading operations. In one example, one or
more managing circuits may comprise an on-chip memory controller
for determining row and column address, word line and bit line
addresses, memory array enable signals, and data latching
signals.
[0028] FIG. 1B depicts one embodiment of memory core control
circuits 104. As depicted, the memory core control circuits 104
include address decoders 170, voltage generators for selected
control lines 172, and voltage generators for unselected control
lines 174. Control lines may include word lines, bit lines, or a
combination of word lines and bit lines. Selected control lines may
include selected word lines or selected bit lines that are used to
place memory cells into a selected state. Unselected control lines
may include unselected word lines or unselected bit lines that are
used to place memory cells into an unselected state. The voltage
generators (or voltage regulators) for selected control lines 172
may comprise one or more voltage generators for generating selected
control line voltages. The voltage generators for unselected
control lines 174 may comprise one or more voltage generators for
generating unselected control line voltages. Address decoders 170
may generate memory block addresses, as well as row addresses and
column addresses for a particular memory block.
[0029] FIGS. 1C-1F depict one embodiment of a memory core
organization that includes a memory core having multiple memory
bays, and each memory bay having multiple memory blocks. Although a
memory core organization is disclosed where memory bays comprise
memory blocks, and memory blocks comprise a group of memory cells,
other organizations or groupings can also be used with the
technology described herein.
[0030] FIG. 1C depicts one embodiment of memory core 103 in FIG.
1A. As depicted, memory core 103 includes memory bay 330 and memory
bay 331. In some embodiments, the number of memory bays per memory
core can be different for different implementations. For example, a
memory core may include only a single memory bay or a plurality of
memory bays (e.g., 16 memory bays or 256 memory bays).
[0031] FIG. 1D depicts one embodiment of memory bay 330 in FIG. 1C.
As depicted, memory bay 330 includes memory blocks 310-312 and
read/write circuits 306. In some embodiments, the number of memory
blocks per memory bay may be different for different
implementations. For example, a memory bay may include one or more
memory blocks (e.g., 32 memory blocks per memory bay). Read/write
circuits 306 include circuitry for reading and writing memory cells
within memory blocks 310-312. As depicted, the read/write circuits
306 may be shared across multiple memory blocks within a memory
bay. This allows chip area to be reduced since a single group of
read/write circuits 306 may be used to support multiple memory
blocks. However, in some embodiments, only a single memory block
may be electrically coupled to read/write circuits 306 at a
particular time to avoid signal conflicts.
[0032] In some embodiments, read/write circuits 306 may be used to
write one or more pages of data into the memory blocks 310-312 (or
into a subset of the memory blocks). The memory cells within the
memory blocks 310-312 may permit direct over-writing of pages
(i.e., data representing a page or a portion of a page may be
written into the memory blocks 310-312 without requiring an erase
or reset operation to be performed on the memory cells prior to
writing the data). In one example, the memory system 101 in FIG. 1A
may receive a write command including a target address and a set of
data to be written to the target address. The memory system 101 may
perform a read-before-write (RBW) operation to read the data
currently stored at the target address before performing a write
operation to write the set of data to the target address. The
memory system 101 may then determine whether a particular memory
cell may stay at its current state (i.e., the memory cell is
already at the correct state), needs to be set to a "0" state, or
needs to be reset to a "1" state. The memory system 101 may then
write a first subset of the memory cells to the "0" state and then
write a second subset of the memory cells to the "1" state. The
memory cells that are already at the correct state may be skipped
over, thereby improving programming speed and reducing the
cumulative voltage stress applied to unselected memory cells. A
particular memory cell may be set to the "1" state by applying a
first voltage difference across the particular memory cell of a
first polarity (e.g., +1.5V). The particular memory cell may be
reset to the "0" state by applying a second voltage difference
across the particular memory cell of a second polarity that is
opposite to that of the first polarity (e.g., -1.5V).
[0033] In some cases, read/write circuits 306 may be used to
program a particular memory cell to be in one of three or more
data/resistance states (i.e., the particular memory cell may
comprise a multi-level memory cell). In one example, the read/write
circuits 306 may apply a first voltage difference (e.g., 2V) across
the particular memory cell to program the particular memory cell
into a first state of the three or more data/resistance states or a
second voltage difference (e.g., 1V) across the particular memory
cell that is less than the first voltage difference to program the
particular memory cell into a second state of the three or more
data/resistance states. Applying a smaller voltage difference
across the particular memory cell may cause the particular memory
cell to be partially programmed or programmed at a slower rate than
when applying a larger voltage difference. In another example, the
read/write circuits 306 may apply a first voltage difference across
the particular memory cell for a first time period (e.g., 150 ns)
to program the particular memory cell into a first state of the
three or more data/resistance states or apply the first voltage
difference across the particular memory cell for a second time
period less than the first time period (e.g., 50 ns). One or more
programming pulses followed by a memory cell verification phase may
be used to program the particular memory cell to be in the correct
state.
[0034] FIG. 1E depicts one embodiment of memory block 310 in FIG.
1D. As depicted, memory block 310 includes a memory array 301, row
decoder 304, and column decoder 302. Memory array 301 may comprise
a contiguous group of memory cells having contiguous word lines and
bit lines. Memory array 301 may comprise one or more layers of
memory cells. Memory array 310 may comprise a two-dimensional
memory array or a three-dimensional memory array. The row decoder
304 decodes a row address and selects a particular word line in
memory array 301 when appropriate (e.g., when reading or writing
memory cells in memory array 301). The column decoder 302 decodes a
column address and selects a particular group of bit lines in
memory array 301 to be electrically coupled to read/write circuits,
such as read/write circuits 306 in FIG. 1D. In one embodiment, the
number of word lines is 4K per memory layer, the number of bit
lines is 1K per memory layer, and the number of memory layers is 4,
providing a memory array 301 containing 16M memory cells.
[0035] FIG. 1F depicts one embodiment of a memory bay 332. Memory
bay 332 is one example of an alternative implementation for memory
bay 330 in FIG. 1D. In some embodiments, row decoders, column
decoders, and read/write circuits may be split or shared between
memory arrays. As depicted, row decoder 349 is shared between
memory arrays 352 and 354 because row decoder 349 controls word
lines in both memory arrays 352 and 354 (i.e., the word lines
driven by row decoder 349 are shared). Row decoders 348 and 349 may
be split such that even word lines in memory array 352 are driven
by row decoder 348 and odd word lines in memory array 352 are
driven by row decoder 349. Column decoders 344 and 346 may be split
such that even bit lines in memory array 352 are controlled by
column decoder 346 and odd bit lines in memory array 352 are driven
by column decoder 344. The selected bit lines controlled by column
decoder 344 may be electrically coupled to read/write circuits 340.
The selected bit lines controlled by column decoder 346 may be
electrically coupled to read/write circuits 342. Splitting the
read/write circuits into read/write circuits 340 and 342 when the
column decoders are split may allow for a more efficient layout of
the memory bay.
[0036] In one embodiment, the memory arrays 352 and 354 may
comprise memory layers that are oriented in a horizontal plane that
is horizontal to the supporting substrate. In another embodiment,
the memory arrays 352 and 354 may comprise memory layers that are
oriented in a vertical plane that is vertical with respect to the
supporting substrate (i.e., the vertical plane is perpendicular to
the supporting substrate). In this case, the bit lines of the
memory arrays may comprise vertical bit lines.
[0037] FIG. 2 depicts one embodiment of a portion of a monolithic
three-dimensional memory array 201 that includes a second memory
level 220 positioned above a first memory level 218. Memory array
201 is one example of an implementation for memory array 301 in
FIG. 1E. The bit lines 206 and 210 are arranged in a first
direction and the word lines 208 are arranged in a second direction
perpendicular to the first direction. As depicted, the upper
conductors of first memory level 218 may be used as the lower
conductors of the second memory level 220 that is positioned above
the first memory level. In a memory array with additional layers of
memory cells, there would be corresponding additional layers of bit
lines and word lines.
[0038] As depicted in FIG. 2, memory array 201 includes a plurality
of memory cells 200. The memory cells 200 may include re-writeable
memory cells. The memory cells 200 may include non-volatile memory
cells or volatile memory cells. With respect to first memory level
218, a first portion of memory cells 200 are between and connect to
bit lines 206 and word lines 208. With respect to second memory
level 220, a second portion of memory cells 200 are between and
connect to bit lines 210 and word lines 208. In one embodiment,
each memory cell includes a steering element (e.g., a diode) and a
memory element (i.e., a state change element). In one example, the
diodes of the first memory level 218 may be upward pointing diodes
as indicated by arrow A.sub.1 (e.g., with p regions at the bottom
of the diodes), while the diodes of the second memory level 220 may
be downward pointing diodes as indicated by arrow A.sub.2 (e.g.,
with n regions at the bottom of the diodes), or vice versa. In
another embodiment, each memory cell includes a state change
element and does not include a steering element. The absence of a
diode (or other steering element) from a memory cell may reduce the
process complexity and costs associated with manufacturing a memory
array.
[0039] In one embodiment, the memory cells 200 of FIG. 2 may
comprise re-writable non-volatile memory cells including a
reversible resistance-switching element. A reversible
resistance-switching element may include a reversible
resistivity-switching material having a resistivity that may be
reversibly switched between two or more states. In one embodiment,
the reversible resistance-switching material may include a barrier
layer comprising germanium or silicon germanium and a metal oxide
(e.g., a binary metal oxide). The metal oxide may include titanium
oxide, nickel oxide, or hafnium oxide. In some cases, the
re-writeable non-volatile memory cells may comprise resistive RAM
(ReRAM) devices.
[0040] Referring to FIG. 2, in one embodiment of a read operation,
the data stored in one of the plurality of memory cells 200 may be
read by biasing one of the word lines (i.e., the selected word
line) to a selected word line voltage in read mode (e.g., 0V). A
read circuit may then be used to bias a selected bit line connected
to the selected memory cell to the selected bit line voltage in
read mode (e.g., 1.0V). In some cases, in order to avoid sensing
leakage current from the many unselected word lines to the selected
bit line, the unselected word lines may be biased to the same
voltage as the selected bit lines (e.g., 1.0V). To avoid leakage
current from the selected word line to the unselected bit lines,
the unselected bit lines may be biased to the same voltage as the
selected word line (e.g., 0V); however, biasing the unselected word
lines to the same voltage as the selected bit lines and biasing the
unselected bit lines to the same voltage as the selected word line
may place a substantial voltage stress across the unselected memory
cells driven by both the unselected word lines and the unselected
bit lines.
[0041] In an alternative read biasing scheme, both the unselected
word lines and the unselected bit lines may be biased to an
intermediate voltage that is between the selected word line voltage
and the selected bit line voltage. Applying the same voltage to
both the unselected word lines and the unselected bit lines may
reduce the voltage stress across the unselected memory cells driven
by both the unselected word lines and the unselected bit lines;
however, the reduced voltage stress comes at the expense of
increased leakage currents associated with the selected word line
and the selected bit line. Before the selected word line voltage
has been applied to the selected word line, the selected bit line
voltage may be applied to the selected bit line, and a read circuit
may then sense an auto zero amount of current through the selected
memory bit line which is subtracted from the bit line current in a
second current sensing when the selected word line voltage is
applied to the selected word line.
[0042] Referring to FIG. 2, in one embodiment of a write operation,
the reversible resistance-switching material may be in an initial
high-resistivity state that is switchable to a low-resistivity
state upon application of a first voltage and/or current.
Application of a second voltage and/or current may return the
reversible resistance-switching material back to the
high-resistivity state. Alternatively, the reversible
resistance-switching material may be in an initial low-resistance
state that is reversibly switchable to a high-resistance state upon
application of the appropriate voltage(s) and/or current(s). When
used in a memory cell, one resistance state may represent a binary
data "0" while another resistance state may represent a binary data
"1." In some cases, a memory cell may be considered to comprise
more than two data/resistance states (i.e., a multi-level memory
cell). In some cases, a write operation may be similar to a read
operation except with a larger voltage range placed across the
selected memory cells.
[0043] The process of switching the resistance of a reversible
resistance-switching element from a high-resistivity state to a
low-resistivity state may be referred to as SETTING the reversible
resistance-switching element. The process of switching the
resistance from the low-resistivity state to the high-resistivity
state may be referred to as RESETTING the reversible
resistance-switching element. The high-resistivity state may be
associated with binary data "1" and the low-resistivity state may
be associated with binary data "0." In other embodiments, SETTING
and RESETTING operations and/or the data encoding may be reversed.
For example, the high-resistivity state may be associated with
binary data "0" and the low-resistivity state may be associated
with binary data "1." In some embodiments, a higher than normal
programming voltage may be required the first time a reversible
resistance-switching element is SET into the low-resistivity state
as the reversible resistance-switching element may have been placed
into a resistance state that is higher than the high-resistivity
state when fabricated. The term "FORMING" may refer to the setting
of a reversible resistance-switching element into a low-resistivity
state for the first time after fabrication or the resetting of a
reversible resistance-switching element into a high-resistivity
state for the first time after fabrication. In some cases, after a
FORMING operation or a memory cell preconditioning operation has
been performed, the reversible resistance-switching element may be
RESET to the high-resistivity state and then SET again to the
low-resistivity state.
[0044] Referring to FIG. 2, in one embodiment of a write operation,
data may be written to one of the plurality of memory cells 200 by
biasing one of the word lines (i.e., the selected word line) to the
selected word line voltage in write mode (e.g., 5V). A write
circuit may be used to bias the bit line connected to the selected
memory cell to the selected bit line voltage in write mode (e.g.,
0V). In some cases, in order to prevent program disturb of
unselected memory cells sharing the selected word line, the
unselected bit lines may be biased such that a first voltage
difference between the selected word line voltage and the
unselected bit line voltage is less than a first disturb threshold.
To prevent program disturb of unselected memory cells sharing the
selected bit line, the unselected word lines may be biased such
that a second voltage difference between the unselected word line
voltage and the selected bit line voltage is less than a second
disturb threshold. The first disturb threshold and the second
disturb threshold may be different depending on the amount of time
in which the unselected memory cells susceptible to disturb are
stressed.
[0045] In one write biasing scheme, both the unselected word lines
and the unselected bit lines may be biased to an intermediate
voltage that is between the selected word line voltage and the
selected bit line voltage. The intermediate voltage may be
generated such that a first voltage difference across unselected
memory cells sharing a selected word line is greater than a second
voltage difference across other unselected memory cells sharing a
selected bit line. One reason for placing the larger voltage
difference across the unselected memory cells sharing a selected
word line is that the memory cells sharing the selected word line
may be verified immediately after a write operation in order to
detect a write disturb.
[0046] FIG. 3 depicts a subset of the memory array and routing
layers of one embodiment of a three-dimensional memory array, such
as memory array 301 in FIG. 1E. As depicted, the Memory Array
layers are positioned above the Substrate. The Memory Array layers
include bit line layers BL0, BL1 and BL2, and word line layers WL0
and WL1. In other embodiments, additional bit line and word line
layers can also be implemented. Supporting circuitry (e.g., row
decoders, column decoders, and read/write circuits) may be arranged
on the surface of the Substrate with the Memory Array layers
fabricated above the supporting circuitry. An integrated circuit
implementing a three-dimensional memory array may also include
multiple metal layers for routing signals between different
components of the supporting circuitry, and between the supporting
circuitry and the bit lines and word lines of the memory array.
These routing layers can be arranged above the supporting circuitry
that is implemented on the surface of the Substrate and below the
Memory Array layers.
[0047] As depicted in FIG. 3, two metal layers R1 and R2 may be
used for routing layers; however, other embodiments can include
more or less than two metal layers. In one example, these metal
layers R1 and R2 may be formed of tungsten (about 1 ohm/square).
Positioned above the Memory Array layers may be one or more top
metal layers used for routing signals between different components
of the integrated circuit, such as the Top Metal layer. In one
example, the Top Metal layer is formed of copper or aluminum (about
0.05 ohms/square), which may provide a smaller resistance per unit
area than metal layers R1 and R2. In some cases, metal layers R1
and R2 may not be implemented using the same materials as those
used for the Top Metal layers because the metal used for R1 and R2
must be able to withstand the processing steps for fabricating the
Memory Array layers on top of R1 and R2 (e.g., satisfying a
particular thermal budget during fabrication).
[0048] FIG. 4A depicts one embodiment of a portion of a monolithic
three-dimensional memory array 416 that includes a first memory
level 412 positioned below a second memory level 410. Memory array
416 is one example of an implementation for memory array 301 in
FIG. 1E. As depicted, the local bit lines LBL.sub.11-LBL.sub.33 are
arranged in a first direction (i.e., a vertical direction) and the
word lines WL.sub.10-WL.sub.23 are arranged in a second direction
perpendicular to the first direction. This arrangement of vertical
bit lines in a monolithic three-dimensional memory array is one
embodiment of a vertical bit line memory array. As depicted,
disposed between the intersection of each local bit line and each
word line is a particular memory cell (e.g., memory cell M.sub.111
is disposed between local bit line LBL.sub.11 and word line
WL.sub.10). In one example, the particular memory cell may include
a floating gate device or a charge trap device (e.g., using a
silicon nitride material). In another example, the particular
memory cell may include a reversible resistance-switching material,
a metal oxide, a phase change material, or a ReRAM material. The
global bit lines GBL.sub.1-GBL.sub.3 are arranged in a third
direction that is perpendicular to both the first direction and the
second direction. A set of bit line select devices (e.g.,
Q.sub.11-Q.sub.31) may be used to select a set of local bit lines
(e.g., LBL.sub.11-LBL.sub.31). As depicted, bit line select devices
Q.sub.11-Q.sub.31 are used to select the local bit lines
LBL.sub.11-LBL.sub.31 and to connect the local bit lines
LBL.sub.11-LBL.sub.31 to the global bit lines GBL.sub.1-GBL.sub.3
using row select line SG.sub.1. Similarly, bit line select devices
Q.sub.12-Q.sub.32 are used to selectively connect the local bit
lines LBL.sub.12-LBL.sub.32 to the global bit lines
GBL.sub.1-GBL.sub.3 using row select line SG.sub.2 and bit line
select devices Q.sub.13-Q.sub.33 are used to selectively connect
the local bit lines LBL.sub.13-LBL.sub.33 to the global bit lines
GBL.sub.1-GBL.sub.3 using row select line SG.sub.3.
[0049] Referring to FIG. 4A, as only a single bit line select
device is used per local bit line, only the voltage of a particular
global bit line may be applied to a corresponding local bit line.
Therefore, when a first set of local bit lines (e.g.,
LBL.sub.11-LBL.sub.31) is biased to the global bit lines
GBL.sub.1-GBL.sub.3, the other local bit lines (e.g.,
LBL.sub.12-LBL.sub.32 and LBL.sub.13-LBL.sub.33) must either also
be driven to the same global bit lines GBL.sub.1-GBL.sub.3 or be
floated. In one embodiment, during a memory operation, all local
bit lines within the memory array are first biased to an unselected
bit line voltage by connecting each of the global bit lines to one
or more local bit lines. After the local bit lines are biased to
the unselected bit line voltage, then only a first set of local bit
lines LBL.sub.11-LBL.sub.31 are biased to one or more selected bit
line voltages via the global bit lines GBL.sub.1-GBL.sub.3, while
the other local bit lines (e.g., LBL.sub.12-LBL.sub.32 and
LBL.sub.13-LBL.sub.33) are floated. The one or more selected bit
line voltages may correspond with, for example, one or more read
voltages during a read operation or one or more programming
voltages during a programming operation.
[0050] FIG. 4B depicts one embodiment of a portion of a monolithic
three-dimensional memory array that includes vertical strips of a
non-volatile memory material. The physical structure depicted in
FIG. 4B may comprise one implementation for a portion of the
monolithic three-dimensional memory array depicted in FIG. 4A. The
vertical strips of non-volatile memory material may be formed in a
direction that is perpendicular to a substrate (e.g., in the Z
direction). A vertical strip of the non-volatile memory material
414 may include, for example, a vertical oxide layer, a vertical
metal oxide layer (e.g., titanium oxide, nickel oxide or hafnium
oxide), a vertical layer of phase change material, or a vertical
charge trapping layer (e.g., a layer of silicon nitride). The
vertical strip of material may comprise a single continuous layer
of material that may be used by a plurality of memory cells or
devices. In one example, portions of the vertical strip of the
non-volatile memory material 414 may comprise a part of a first
memory cell associated with the cross section between WL.sub.12 and
LBL.sub.13 and a part of a second memory cell associated with the
cross section between WL.sub.22 and LBL.sub.13. In some cases, a
vertical bit line, such as LBL.sub.13, may comprise a vertical
structure (e.g., a rectangular prism, a cylinder, or a pillar) and
the non-volatile material may completely or partially surround the
vertical structure (e.g., a conformal layer of phase change
material surrounding the sides of the vertical structure). As
depicted, each of the vertical bit lines may be connected to one of
a set of global bit lines via a select transistor. The select
transistor may comprise a MOS device (e.g., an NMOS device) or a
vertical thin-film transistor (TFT).
[0051] FIG. 5 depicts one embodiment of a read/write circuit 502
along with a portion of a memory array 501. Read/write circuit 502
is one example of an implementation of read/write circuit 306 in
FIG. 1D. The portion of a memory array 501 includes two of the many
bit lines (one selected bit line labeled "Selected BL" and one
unselected bit line labeled "Unselected BL") and two of the many
word lines (one selected word line labeled "Selected WL" and one
unselected word line labeled "Unselected WL"). The portion of a
memory array also includes a selected memory cell 550 and
unselected memory cells 552-556. In one embodiment, the portion of
a memory array 501 may comprise a memory array with bit lines
arranged in a direction horizontal to the substrate, such as memory
array 201 in FIG. 2. In another embodiment, the portion of a memory
array 501 may comprise a memory array with bit lines arranged in a
vertical direction that is perpendicular to the substrate, such as
memory array 416 in FIG. 4A.
[0052] The memory array 501 may include a memory cell with a BMC
structure. In one embodiment, the BMC structure may include a
barrier layer comprising a layer of titanium oxide or strontium
titanate in series with a germanium-metal alloy, such as germanium
doped with aluminum, hafnium, or zirconium. In another embodiment,
the BMC structure may include a germanium stack in series with a
barrier layer that comprises an alternating stack of one or more
layers of amorphous germanium or amorphous silicon germanium with
one or more layers of a metal oxide, such as titanium oxide or
aluminum oxide.
[0053] As depicted, during a memory array operation (e.g., a
programming operation), the selected bit line may be biased to 1V,
the unselected word line may be biased to 0.6V, the selected word
line may be biased to 0V, and the unselected bit line may be biased
to 0.5V. In some embodiments, during a second memory array
operation, the selected bit line may be biased to a selected bit
line voltage (e.g., 2.0V), the unselected word line may be biased
to an unselected word line voltage (e.g., 1.0V), the selected word
line may be biased to a selected word line voltage (e.g., 0V), and
the unselected bit line may be biased to an unselected bit line
voltage (e.g., 1V). In this case, the unselected memory cells
sharing the selected word line will be biased to the voltage
difference between the selected word line voltage and the
unselected bit line voltage. In other embodiments, the memory array
biasing scheme depicted in FIG. 5 may be reversed such that the
selected bit line is biased to 0V, the unselected word line is
biased to 0.4V, the selected word line is biased to 1V, and the
unselected bit line is biased to 0.5V.
[0054] As depicted in FIG. 5, the SELB node of read/write circuit
502 may be electrically coupled to the selected bit line via column
decoder 504. In one embodiment, column decoder 504 may correspond
with column decoder 302 depicted in FIG. 1E. Transistor 562 couples
(or electrically connects) node SELB to the Vsense node. The
transistor 562 may comprise a low VT nMOS device. Clamp control
circuit 564 controls the gate of transistor 562. The Vsense node is
connected to reference current Iref and one input of sense
amplifier 566. The other input of sense amplifier 566 receives
Vref-read, which is the voltage level used for comparing the Vsense
node voltage in read mode. The output of sense amplifier 566 is
connected to the data out terminal and to data latch 568. Write
circuit 560 is connected to node SELB, the Data In terminal, and
data latch 568.
[0055] In one embodiment, during a read operation, read/write
circuit 502 biases the selected bit line to the selected bit line
voltage in read mode. Prior to sensing data, read/write circuit 502
will precharge the Vsense node to 2V (or some other voltage greater
than the selected bit line voltage). When sensing data, read/write
circuit 502 attempts to regulate the SELB node to the selected bit
line voltage (e.g., 1V) via clamp control circuit 564 and
transistor 562 in a source-follower configuration. If the current
through the selected memory cell 550 is greater than the read
current limit, Iref, then, over time, the Vsense node will fall
below Vref-read (e.g., set to 1.5V) and the sense amplifier 566
will read out a data "0." Outputting a data "0" represents that the
selected memory cell 550 is in a low resistance state (e.g., a SET
state). If the current through the selected memory cell 550 is less
than Iref, then the Vsense node will stay above Vref-read and the
sense amplifier 566 will read out a data "1." Outputting a data "1"
represents that the selected memory cell 550 is in a high
resistance state (e.g., a RESET state). Data latch 568 may latch
the output of sense amplifier 566 after a time period of sensing
the current through the selected memory cell (e.g., after 400
ns).
[0056] In one embodiment, during a write operation, if the Data In
terminal requests a data "0" to be written to a selected memory
cell, then read/write circuit 502 may bias SELB to the selected bit
line voltage for programming a data "0" in write mode (e.g., 1.2V
for a SET operation) via write circuit 560. The duration of
programming the memory cell may be a fixed time period (e.g., using
a fixed-width programming pulse) or variable (e.g., using a write
circuit 560 that senses whether a memory cell has been programmed
while programming). If the Data In terminal requests a data "1" to
be written, then read/write circuit 502 may bias SELB to the
selected bit line voltage for programming a data "1" in write mode
(e.g., 0V or -1.2V for a RESET operation) via write circuit 560. In
some cases, if a selected memory cell is to maintain its current
state, then the write circuit 560 may bias SELB to a program
inhibit voltage during write mode. The program inhibit voltage may
be the same as or close to the unselected bit line voltage.
[0057] FIG. 6A depicts a cross-sectional view of a memory structure
using the vertically oriented select devices shown in FIG. 4B. The
memory structure of FIG. 6A may comprise a continuous mesh array of
memory elements because there are memory elements connected to both
sides of the bit lines and memory elements connected to both sides
of the word lines. At the bottom of FIG. 6A, a silicon substrate is
depicted. Implemented above the surface of the silicon substrate
are various metal lines including ML-0, ML-1, and ML-2. Line 526 of
ML-2 serves as a respective global bit line (GBL). The Pillar
Select Layer includes two oxide layers 520 with a gate material
layer 522 sandwiched there between. The oxide layers 520 can be
SiO.sub.2. The metal line ML-2 526 serving as a global bit line can
be implemented of any suitable material, including Tungsten, or
Tungsten on a Titanium Nitride adhesion layer or a sandwich of n+
polysilicon on Tungsten on Titanium Nitride adhesion layer. Gate
material 522 can be polysilicon, Titanium Nitride, Tantalum
Nitride, Nickel Silicide or any other suitable material. Gate
material 522 implements the row select lines SG.sub.x (e.g.
SG.sub.1, SG.sub.2, . . . of FIG. 4B), which are labeled in FIG. 6A
as row select lines 580, 582, 584, 586, 588 and 590.
[0058] The memory layer includes a set of vertical bit lines 530
(comprising N+ polysilicon). Interspersed between the vertical bit
lines 530 are alternating oxide layers 534 and word line layers
536. In one embodiment, the word lines are made from TiN. Between
the vertical bit lines 530 and the stacks of alternating oxide
layers 534 and word line layers 536 are vertically oriented layers
of reversible resistance switching material 532. In one embodiment,
the reversible resistance switching material 532 may include a
layer of amorphous germanium or a layer of amorphous silicon
germanium (e.g., a Ge or SiGe barrier layer) and a layer of
titanium oxide (e.g., a TiO2 switching layer). Box 540 depicts one
example memory element which includes the reversible resistance
switching material 532 sandwiched between a word line 536 and
vertical bit line 530. Directly below each vertical bit line 530
are the vertically oriented select devices 504, each of which
comprises (in one example embodiment) a n+/p-/n+ TFT. Each of the
vertically oriented select devices 504 have oxide layers 505 on
each side. FIG. 6A also shows an n+ polysilicon layer 524. As
depicted, the npn TFT of vertically oriented select devices 504 can
be used to connect the global bit line GBL (layer 526) with any of
the vertical bit lines 530.
[0059] Moreover, FIG. 6A shows six row select lines (SG.sub.x) 580,
582, 584, 586, 588 and 590 in the gate material layer 522, each
underneath a stack of multiple word lines. Each of the row select
lines 580, 582, 584, 586, 588 and 590 is positioned between two
vertically oriented select devices 504, above and not in the
substrate. Each row select line may serve as the gate signal to
either of the two neighboring vertically oriented select devices
504; therefore, the vertically oriented select devices 504 are said
to be double gated. Each vertically oriented select device 504 can
be controlled by two different row select lines, in this
embodiment. One aspect of the vertically oriented select devices
incorporated to the base portion of each bit line pillar is that
two adjacent vertically oriented select devices share the same gate
region. This allows the vertically oriented select devices to be
closer together.
[0060] In some embodiments, a portion of a memory array may be
formed by first etching through an alternating stack of word line
layers and dielectric layers (e.g., etching through layers of TiN
or polysilicon that are separated by oxide layers) to form a
plurality of memory holes. The plurality of memory holes may
comprise rectangular, square, or cylindrical holes. The plurality
of memory holes may be formed by patterning and then removing
material using various etching techniques such as dry etching, wet
chemical etching, plasma etching, or reactive-ion etching (ME).
After the plurality of memory holes have been created, the layers
for forming vertical pillars within the plurality of memory holes
may be deposited. The layers of the vertical pillars may be
deposited using various deposition techniques such as chemical
vapor deposition (CVD), physical vapor deposition (PVD), or atomic
layer deposition (ALD).
[0061] FIG. 6B depicts one embodiment of a BMC structure that
includes a layer of germanium or silicon germanium in series with
two or more conductive metal oxides. In one example, the BMC
structure may correspond with a memory element sandwiched between a
word line and a vertical bit line that may be formed within box 540
in FIG. 6A. As depicted, a bit line 624 (e.g., a vertical bit line
comprising tungsten) is arranged adjacent to a titanium nitride
layer 627 that is arranged adjacent to a first conductive metal
oxide layer 626 (e.g., a layer of titanium oxide) that is arranged
adjacent to a first layer of amorphous germanium or amorphous
silicon germanium 628 that is arranged adjacent to a second
conductive metal oxide layer 623 (e.g., a layer of aluminum oxide)
different from the first conductive metal oxide layer 626 that is
arranged adjacent to a second layer of amorphous germanium or
amorphous silicon germanium 625. In some cases, the thickness of
the first layer of amorphous germanium or amorphous silicon
germanium 628 may range between 0.5 nm and 10 nm. In some cases,
the thickness of the first conductive metal oxide layer 626 may
range between 2 nm and 10 nm and the thickness of the second
conductive metal oxide layer 623 may range between 0.3 nm and 1.5
nm or a value less than the thickness of the first conductive metal
oxide layer 626. A word line 622 may directly connect to the second
layer of amorphous germanium or amorphous silicon germanium 625 and
oxide layers 620 may electrically separate or isolate word lines
within a memory array.
[0062] FIG. 6C depicts another embodiment of a BMC structure that
includes a layer of germanium or a layer of silicon germanium in
series with two or more conductive metal oxides. As depicted, a bit
line 634 (e.g., a tungsten bit line) is arranged adjacent to a
titanium nitride layer 637 that is arranged adjacent to a first
conductive metal oxide layer 636 (e.g., a layer of titanium oxide)
that is arranged adjacent to a first layer of amorphous germanium
or amorphous silicon germanium 638 that is arranged adjacent to a
second conductive metal oxide layer 633 (e.g., a layer of aluminum
oxide) different from the first conductive metal oxide layer 636
that is arranged adjacent to a second layer of amorphous germanium
or amorphous silicon germanium 635. The word line 629 (e.g., a
tungsten word line) connects to the second layer of amorphous
germanium or amorphous silicon germanium 635 via the titanium
nitride layer 632. A liner spacer 631 may be used to isolate the
titanium nitride layer 632 from the oxide layers 630. A layer of
titanium nitride 639 may be arranged between the word line 629 and
oxide layer 630 (e.g., a layer of silicon dioxide). The first layer
of amorphous germanium or amorphous silicon germanium 638, the
second conductive metal oxide layer 633, and the second layer of
amorphous germanium or amorphous silicon germanium 635 may comprise
a germanium stack in series with a barrier layer comprising the
first conductive metal oxide layer 636. The germanium stack and the
barrier layer may comprise a BMC structure corresponding with a
memory cell.
[0063] FIG. 6D depicts another embodiment of a BMC structure that
includes a layer of germanium or silicon germanium in series with
two or more conductive metal oxides. In one example, the BMC
structure may correspond with a memory element sandwiched between a
word line and a vertical bit line that may be formed within box 540
in FIG. 6A. As depicted, a bit line 624 (e.g., a vertical bit line
comprising tungsten) is arranged adjacent to a titanium nitride
layer 627 that is arranged adjacent to a first conductive metal
oxide layer 626 (e.g., a layer of titanium oxide) that is arranged
adjacent to a first layer of amorphous germanium or amorphous
silicon germanium 628 that is arranged adjacent to a second
conductive metal oxide layer 623 (e.g., a layer of aluminum oxide)
different from the first conductive metal oxide layer 626. In some
embodiments, the metal used in the second conductive metal oxide
layer 623 may have a greater affinity for oxygen compared with the
metal used in the first conductive metal oxide layer 626. In some
cases, the thickness of the first layer of amorphous germanium or
amorphous silicon germanium 628 may range between 0.5 nm and 10 nm
and be greater than the thickness of the second conductive metal
oxide layer 623 that may range between 0.3 nm and 1.5 nm. The word
line 622 may directly connect to the second conductive metal oxide
layer 623 and oxide layers 620 may electrically separate or isolate
word lines within a memory array.
[0064] FIG. 6E depicts another embodiment of a BMC structure that
includes a layer of germanium or a layer of silicon germanium in
series with two or more conductive metal oxides. As depicted, a bit
line 634 (e.g., a tungsten bit line) is arranged adjacent to a
titanium nitride layer 637 that is arranged adjacent to a first
conductive metal oxide layer 636 (e.g., a layer of titanium oxide)
that is arranged adjacent to a first layer of amorphous germanium
or amorphous silicon germanium 638 that is arranged adjacent to a
second conductive metal oxide layer 633 (e.g., a layer of aluminum
oxide) different from the first conductive metal oxide layer 636.
The word line 629 (e.g., a tungsten word line) connects to the
second conductive metal oxide layer 633 via the titanium nitride
layer 632. In some embodiments, the metal used in the second
conductive metal oxide layer 633 may have a greater affinity for
oxygen compared with the metal used in the first conductive metal
oxide layer 636. A liner spacer 631 may be used to isolate the
titanium nitride layer 632 from the oxide layers 630. A layer of
titanium nitride 639 may be arranged between the word line 629 and
oxide layer 630 (e.g., a layer of silicon dioxide). The first layer
of amorphous germanium or amorphous silicon germanium 638 and the
second conductive metal oxide layer 633 may comprise a germanium
stack in series with a barrier layer comprising the first
conductive metal oxide layer 636. The germanium stack and the
barrier layer may comprise a BMC structure corresponding with a
rewriteable memory cell.
[0065] FIGS. 6F-6K depict various reversible resistance-switching
BMC structures. FIG. 6F depicts one embodiment of a BMC structure
that includes a layer of titanium nitride 657 arranged above or
adjacent to a layer of aluminum oxide 656 that is adjacent to the
layer of titanium oxide 658 that is adjacent to a germanium layer
653 that is adjacent to a layer of a conductive metal oxide 655
that is adjacent to a second layer of germanium 659 that is in
contact with a titanium nitride plug 652. In some cases, the
titanium nitride plug 652 may correspond with the titanium nitride
layer 632 in FIGS. 6C and 6E. FIG. 6G is a similar configuration to
FIG. 6F and includes an additional pair of germanium layer 653 and
layer of conductive metal oxide 655 between the layer of titanium
oxide 658 (e.g., acting as a barrier layer for the BMC structure)
and the second layer of germanium 659. In some cases, a germanium
stack may comprise one or more pairs of germanium layers and
conductive metal oxide layers.
[0066] FIG. 6H depicts one embodiment of a BMC structure that
includes a layer of titanium nitride 657 arranged above or adjacent
to a layer of aluminum oxide 656 that is adjacent to the layer of
titanium oxide 658 that is adjacent to a germanium layer 663 that
is adjacent to a layer of a metal 661 that is in contact with a
titanium nitride plug 672. The layer of metal 661 may comprise a
layer of a conducting metal, such as a layer of aluminum, titanium,
or tungsten. The thickness of the layer of metal 661 may range
between 0.5 nm and 3 nm. The thickness of the germanium layer 663
may be greater than the thickness of the layer of metal 661.
[0067] FIG. 6I depicts one embodiment of a BMC structure that
includes a layer of titanium nitride 657 arranged above or adjacent
to a layer of aluminum oxide 656 that is adjacent to the layer of
titanium oxide 658 that is adjacent to a germanium-metal alloy 662
that is in contact with a titanium nitride plug 682. The
germanium-metal alloy 662 may comprise a germanium-metal alloy in
which the metal comprises one of aluminum, hafnium, tungsten, or
zirconium. The germanium-metal alloy 662 may be formed by uniformly
doping germanium with the appropriate metal during deposition of
the germanium-metal alloy.
[0068] FIG. 6J depicts an alternative embodiment of a BMC structure
that includes a layer of titanium nitride 657 arranged above or
adjacent to a layer of aluminum oxide 656 that is adjacent to the
layer of titanium oxide 658 that is adjacent to a germanium layer
653 that is adjacent to a layer of a conductive metal oxide 655
(e.g., aluminum oxide) that is in contact with a titanium nitride
plug 652. In some cases, the titanium nitride plug 652 may
correspond with the titanium nitride layer 632 in FIGS. 6C and 6E.
FIG. 6K is a similar configuration to FIG. 6J and includes an
additional pair of germanium layer 653 and layer of conductive
metal oxide 655 between the layer of titanium oxide 658 (e.g.,
acting as a barrier layer for the BMC structure) and the titanium
nitride plug 652. In some cases, a germanium stack may comprise two
or more pairs of germanium layers and conductive metal oxide layers
positioned between the barrier layer of the BMC structure and the
titanium nitride plug 652.
[0069] FIG. 8 depicts a flowchart describing an embodiment of a
process for forming portions of a memory array. The flowchart may
omit common processing steps (e.g., the formation of isolation
regions or structures, various implant and annealing steps, the
formation of vias/contacts, the formation of a passivation layer,
planarization, etc.) in order to highlight the processing steps
described.
[0070] FIGS. 7A-7D depict various embodiments of processes for
forming portions of a memory array. FIGS. 7A-7D may depict various
stages of fabrication using cross-sectional views and may be
referred to when describing the process of FIG. 8.
[0071] Referring to FIG. 8, in step 802, an alternating stack of
word line layers and dielectric layers are formed. The alternating
stack of word line layers and dielectric layers may comprise an
alternating stack of TiN or polysilicon that are separated by
layers of oxide or silicon dioxide. The alternating stack of word
line layers and dielectric layers may be formed over one or more
global bit lines or above a global bit line layer. The layers may
be formed over an n+ polysilicon layer, such as n+ polysilicon
layer 524 in FIG. 6A or positioned above a substrate, such as a
silicon substrate or glass substrate. The alternating stack of word
line layers and dielectric layers may be deposited using various
deposition techniques such as chemical vapor deposition (CVD),
physical vapor deposition (PVD), or atomic layer deposition (ALD).
In step 804, a memory hole is etched extending through the
alternating stack of word line layers and dielectric layers. The
memory hole may be etched using various etching techniques such as
dry etching, wet chemical etching, plasma etching, or reactive-ion
etching (RIE).
[0072] Referring to FIG. 7A, an alternating stack of word line
layers and dielectric layers have been formed and a memory hole 702
has been etched extending through the alternating stack of word
line layers and dielectric layers. The word line layers include
word line layer 712, which may comprise a layer of TiN,
polysilicon, titanium, tantalum, or tungsten (W). The dielectric
layers include dielectric layer 711, which may comprise a layer of
silicon dioxide.
[0073] Referring to FIG. 8, in step 806, a portion of the word line
layers is recessed. The word line layers may be recessed using a
selective etch or a timed etch. Referring to FIG. 7B, a portion 704
of the word line layers has been recessed or removed. In step 808,
the portion of the word line layers that was recessed is filled
with one or more materials comprising a germanium stack. Referring
to FIG. 7C, the portion of the word line layers has been filled
with materials corresponding with a germanium stack 752. The
germanium stack 752 may comprise one of the germanium stacks
depicted in FIGS. 6F-6I. In step 810, a second material (e.g.,
titanium oxide) is deposited within the memory hole. The second
material may correspond with a barrier layer of a BMC structure. In
step 812, titanium nitride or tungsten nitride may be deposited
within the memory hole. In some cases, the layer of titanium
nitride or tungsten nitride may be omitted. In step 814, a
conducting material (e.g., tungsten) is deposited within the memory
hole. Referring to FIG. 7D, a second material 720 has been
deposited within the memory hole, along with a layer of titanium
nitride 724 and a layer of conducting material 722 (e.g.,
tungsten). The conducting material 722 within the memory hole may
correspond with a vertical bit line. In some cases, the arrangement
of the germanium stack 752 and the second material 720 may be
swapped with each other.
[0074] In one embodiment, a layer of titanium oxide may be
partially embedded within a recessed region of a word line layer
while a germanium stack is formed within a memory hole and is not
formed within the recessed region of the word line layer. In this
case, the word line layers within the alternating stack of word
line layers and dielectric layers may be formed using titanium
metal. A thin layer of titanium nitride may be used on the top
and/or bottom of each layer of titanium metal in order to prevent
excess oxidation of titanium by dielectric layers comprising
silicon dioxide. In another embodiment, a layer of titanium oxide
and the entire germanium stack may be fully embedded within a
recessed region of the word line layer. In this case, both the
layer of titanium oxide and the layers of germanium stack may be
totally formed within the recessed region and may not extend
outside of the recessed region. In some cases, the word line layers
may comprise titanium metal and the word line layers may be
recessed with a mixed acid wet etch process.
[0075] In some cases, a word line layer may comprise a particular
metal (e.g., titanium, tantalum, or tungsten) and a portion of the
BMC structure or the memory cell structure may be formed via
oxidation of the word line layer (e.g., after etching of a memory
hole or after recessing a portion of the word line layer). The
portion of the BMC structure or the memory cell structure may
comprise a metal oxide. In one example, the word line layer may
comprise titanium and the portion of the memory cell structure may
comprise titanium oxide. In another example, the word line layer
may comprise tungsten and the portion of the memory cell structure
may comprise tungsten oxide. In another example, the word line
layer may comprise tantalum and the portion of the memory cell
structure may comprise tantalum oxide.
[0076] One embodiment of the disclosed technology a bit line, a
word line, and a memory cell arranged between the word line and the
bit line. The memory cell includes a first conductive metal oxide
in series with an alternating stack of one or more layers of
germanium with one or more layers of a second conductive metal
oxide different from the first conductive metal oxide.
[0077] One embodiment of the disclosed technology includes one or
more control circuits and a memory array including a word line and
a bit line. The memory array includes a memory cell arranged
between the word line and the bit line. The memory cell comprises a
first conductive metal oxide of a first metal adjacent to a layer
of a germanium-metal alloy of a second metal adjacent to a first
layer of the second metal. The second metal is different from the
first metal. The one or more control circuits configured to bias
the word line and the bit line during a memory operation.
[0078] One embodiment of the disclosed includes forming an
alternating stack of word line layers and dielectric layers,
etching a memory hole extending through the alternating stack of
word line layers and dielectric layers, recessing a portion of a
first word line layer of the word line layers subsequent to etching
the memory hole, depositing one of a layer of amorphous germanium
or a layer of amorphous silicon germanium within a first region of
the recessed portion of the first word line layer, depositing a
layer of a second metal oxide within a second region of the
recessed portion of the first word line layer, and depositing a
layer of a first metal oxide different from the second metal oxide
within the memory hole.
[0079] For purposes of this document, a first layer may be over or
above a second layer if zero, one, or more intervening layers are
between the first layer and the second layer.
[0080] For purposes of this document, it should be noted that the
dimensions of the various features depicted in the figures may not
necessarily be drawn to scale.
[0081] For purposes of this document, reference in the
specification to "an embodiment," "one embodiment," "some
embodiments," or "another embodiment" may be used to describe
different embodiments and do not necessarily refer to the same
embodiment.
[0082] For purposes of this document, a connection may be a direct
connection or an indirect connection (e.g., via another part). In
some cases, when an element is referred to as being connected or
coupled to another element, the element may be directly connected
to the other element or indirectly connected to the other element
via intervening elements. When an element is referred to as being
directly connected to another element, then there are no
intervening elements between the element and the other element.
[0083] For purposes of this document, the term "based on" may be
read as "based at least in part on."
[0084] For purposes of this document, without additional context,
use of numerical terms such as a "first" object, a "second" object,
and a "third" object may not imply an ordering of objects, but may
instead be used for identification purposes to identify different
objects.
[0085] For purposes of this document, the term "set" of objects may
refer to a "set" of one or more of the objects.
[0086] Although the subject matter has been described in language
specific to structural features and/or methodological acts, it is
to be understood that the subject matter defined in the appended
claims is not necessarily limited to the specific features or acts
described above. Rather, the specific features and acts described
above are disclosed as example forms of implementing the
claims.
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