U.S. patent application number 15/541471 was filed with the patent office on 2018-10-11 for manufacturing method for complementary tft device and manufacturing method for oled display panel.
The applicant listed for this patent is WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.. Invention is credited to Zhe LIU, Xuanyun WANG.
Application Number | 20180294314 15/541471 |
Document ID | / |
Family ID | 63685399 |
Filed Date | 2018-10-11 |
United States Patent
Application |
20180294314 |
Kind Code |
A1 |
LIU; Zhe ; et al. |
October 11, 2018 |
MANUFACTURING METHOD FOR COMPLEMENTARY TFT DEVICE AND MANUFACTURING
METHOD FOR OLED DISPLAY PANEL
Abstract
The invention provides a manufacturing method for complementary
TFT device. The manufacturing method for complementary TFT device
uses a solution method to continuously form a metal oxide
semiconductor TFT and an organic semiconductor TFT; the metal oxide
semiconductor TFT and the organic semiconductor TFT are
electrically connected, and one of the metal oxide semiconductor
TFT and the organic semiconductor TFT is an N-type channel TFT, and
the other is a P-type channel TFT. The method can reduce the use of
vacuum apparatus and high temperature apparatus, and explore the
advantages of the solution method to realize large area and
low-cost to reduce production costs and increase product
competitiveness. The invention also provides a manufacturing method
for OLED display panel, able to reduce production cost and increase
product competitiveness.
Inventors: |
LIU; Zhe; (Wuhan, CN)
; WANG; Xuanyun; (Wuhan, CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. |
Wuhan, Hubei |
|
CN |
|
|
Family ID: |
63685399 |
Appl. No.: |
15/541471 |
Filed: |
May 16, 2017 |
PCT Filed: |
May 16, 2017 |
PCT NO: |
PCT/CN2017/084606 |
371 Date: |
July 3, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/3246 20130101;
H01L 27/1251 20130101; H01L 27/1225 20130101; H01L 27/286 20130101;
H01L 2227/323 20130101; H01L 27/127 20130101; H01L 27/3262
20130101; H01L 27/3274 20130101; H01L 51/56 20130101; H01L 27/283
20130101 |
International
Class: |
H01L 27/28 20060101
H01L027/28; H01L 27/12 20060101 H01L027/12; H01L 51/56 20060101
H01L051/56; H01L 27/32 20060101 H01L027/32 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 5, 2017 |
CN |
201710218698.8 |
Claims
1. A manufacturing method for complementary thin film transistor
(TFT) device, comprising the steps of: Step 1: providing a
substrate, forming a first gate, a first electrode and a second
electrode on the substrate, distributed with gaps in-between; Step
2: forming, in subsequent order, a stack of a second active layer,
a second gate dielectric layer, and a second gate at a gap area
between the first electrode and the second electrode, and a portion
of the gap area near the first electrode and the second electrode;
Step 3: covering the substrate, the first gate, the first
electrode, the second electrode, the second gate with a first gate
dielectric layer, patternizing the first gate dielectric layer to
form a via above the first electrode to expose a portion of the
first electrode; Step 4: forming a first active layer on the first
gate dielectric layer above the first gate; Step 5: forming a third
electrode and a fourth electrode contacting respectively with two
ends of the first active layer on the first gate dielectric layer,
the fourth electrode contacting the first electrode through the
via; wherein one of the first active layer and the second active
layer being an N-type channel active layer and the other being a
P-type channel active layer; one of the first active layer and the
second active layer being a metal oxide semiconductor active layer
and the other being an organic semiconductor active layer;
manufacturing process for the metal oxide semiconductor active
layer comprising: disposing a metal oxide semiconductor precursor
solution in an area to be formed to form a metal oxide
semiconductor precursor thin film, annealing the metal oxide
semiconductor precursor thin film to form a metal oxide
semiconductor thin film, patternizing the metal oxide semiconductor
thin film to form a metal oxide semiconductor active layer;
manufacturing process for the organic semiconductor active layer
comprising: disposing an organic semiconductor solution, baking the
organic semiconductor solution to obtain an organic semiconductor
thin film, and patternizing the organic semiconductor film to
obtain an organic semiconductor active layer.
2. The manufacturing method for complementary TFT device as claimed
in claim 1, wherein the first active layer is an N-type channel
metal oxide semiconductor active layer, and the second active layer
is a P-type channel organic semiconductor active layer.
3. The manufacturing method for complementary TFT device as claimed
in claim 2, wherein Step 2 specifically comprises: using a solution
coating process and a baking process sequentially to obtain a
P-type organic semiconductor thin film covering the substrate, the
first gate, the first electrode, and the second electrode, and an
organic dielectric material thin film on the P-type organic
semiconductor thin film; using a vapor deposition process or a
sputtering process on the organic dielectric material thin film to
form a metal thin film covering the organic dielectric material
thin film, patternizing the metal thin film to obtain the second
gate, using the second gate as a mask to perform dry etching
simultaneously on the P-type organic semiconductor thin film and
the organic dielectric material thin film to obtain the second
active layer and the second gate dielectric layer.
4. The manufacturing method for complementary TFT device as claimed
in claim 2, wherein Step 4 specifically comprises: coating an
N-type metal oxide semiconductor precursor solution on the first
gate dielectric layer to form an N-type metal oxide semiconductor
precursor thin film, annealing the N-type metal oxide semiconductor
precursor thin film to obtain an N-type metal oxide semiconductor
thin film, patternizing the N-type metal oxide semiconductor thin
film to obtain the first active layer.
5. The manufacturing method for complementary TFT device as claimed
in claim 4, wherein the N-type metal oxide semiconductor precursor
solution is a metal halide solution dissolved in a nitrile solvent;
and he glycol solvent is used to control thickness uniformity of
the N-type metal oxidation semiconductor precursor thin film when
coating the N-type metal oxide semiconductor precursor
solution.
6. A manufacturing method for organic light-emitting diode (OLED)
display panel, comprising the steps of: Step 1': providing a
substrate, forming a first gate, a first electrode, a second
electrode, and a capacitor lower electrode plate on the substrate,
distributed with gaps in-between; Step 2': forming, in subsequent
order, a stack of a second active layer, a second gate dielectric
layer, and a second gate at a gap area between the first electrode
and the second electrode, and a portion of the gap area near the
first electrode and the second electrode; Step 3': covering the
substrate, the first gate, the first electrode, the second
electrode, the second gate with a first gate dielectric layer,
patternizing the first gate dielectric layer to respectively form a
first via above the first electrode and a second via above the
second gate, the first via and the second via respectively exposing
a portion of the first electrode and a portion of the second gate;
Step 4': forming a first active layer on the first gate dielectric
layer above the first gate; Step 5': on the first gate dielectric
layer, forming a third electrode and a fourth electrode contacting
respectively with two ends of the first active layer, and a
capacitor upper electrode plate above the capacitor lower electrode
plate, the fourth electrode contacting the first electrode through
the first via, and the capacitor upper electrode plate contacting
the second gate through the second via; Step 6': forming a
planarization layer, on the third electrode, the fourth electrode,
the capacitor upper electrode plate, the first active layer, and
the first gate dielectric layer; forming on the planarization
layer, in subsequent order of, a pixel electrode, a pixel
definition layer and an organic light-emitting layer; wherein one
of the first active layer and the second active layer being an
N-type channel active layer and the other being a P-type channel
active layer; one of the first active layer and the second active
layer being a metal oxide semiconductor active layer and the other
being an organic semiconductor active layer; manufacturing process
for the metal oxide semiconductor active layer comprising:
disposing a metal oxide semiconductor precursor solution in an area
to be formed to form a metal oxide semiconductor precursor thin
film, annealing the metal oxide semiconductor precursor thin film
to form a metal oxide semiconductor thin film, patternizing the
metal oxide semiconductor thin film to form a metal oxide
semiconductor active layer; manufacturing process for the organic
semiconductor active layer comprising: disposing an organic
semiconductor solution, baking the organic semiconductor solution
to obtain an organic semiconductor thin film, and patternizing the
organic semiconductor film to obtain an organic semiconductor
active layer.
7. The manufacturing method for OLED display panel as claimed in
claim 6, wherein the first active layer is an N-type channel metal
oxide semiconductor active layer, and the second active layer is a
P-type channel organic semiconductor active layer.
8. The manufacturing method for OLED display panel as claimed in
claim 7, wherein Step 2' specifically comprises: using a solution
coating process and a baking process sequentially to obtain a
P-type organic semiconductor thin film covering the substrate, the
first gate, the first electrode, and the second electrode, and an
organic dielectric material thin film on the P-type organic
semiconductor thin film; using a vapor deposition process or a
sputtering process on the organic dielectric material thin film to
form a metal thin film covering the organic dielectric material
thin film, patternizing the metal thin film to obtain the second
gate, using the second gate as a mask to perform dry etching
simultaneously on the P-type organic semiconductor thin film and
the organic dielectric material thin film to obtain the second
active layer and the second gate dielectric layer.
9. The manufacturing method for OLED display panel as claimed in
claim 7, wherein Step 4' specifically comprises: coating an N-type
metal oxide semiconductor precursor solution on the first gate
dielectric layer to form an N-type metal oxide semiconductor
precursor thin film, annealing the N-type metal oxide semiconductor
precursor thin film to obtain an N-type metal oxide semiconductor
thin film, patternizing the N-type metal oxide semiconductor thin
film to obtain the first active layer.
10. The manufacturing method for OLED display panel as claimed in
claim 9, wherein the N-type metal oxide semiconductor precursor
solution is a metal halide solution dissolved in a nitrile solvent;
and he glycol solvent is used to control thickness uniformity of
the N-type metal oxidation semiconductor precursor thin film when
coating the N-type metal oxide semiconductor precursor
solution.
11. A manufacturing method for complementary thin film transistor
(TFT) device, comprising the steps of: Step 1: providing a
substrate, forming a first gate, a first electrode and a second
electrode on the substrate, distributed with gaps in-between; Step
2: forming, in subsequent order, a stack of a second active layer,
a second gate dielectric layer, and a second gate at a gap area
between the first electrode and the second electrode, and a portion
of the gap area near the first electrode and the second electrode;
Step 3: covering the substrate, the first gate, the first
electrode, the second electrode, the second gate with a first gate
dielectric layer, patternizing the first gate dielectric layer to
form a via above the first electrode to expose a portion of the
first electrode; Step 4: forming a first active layer on the first
gate dielectric layer above the first gate; Step 5: forming a third
electrode and a fourth electrode contacting respectively with two
ends of the first active layer on the first gate dielectric layer,
the fourth electrode contacting the first electrode through the
via; wherein one of the first active layer and the second active
layer being an N-type channel active layer and the other being a
P-type channel active layer; one of the first active layer and the
second active layer being a metal oxide semiconductor active layer
and the other being an organic semiconductor active layer;
manufacturing process for the metal oxide semiconductor active
layer comprising: disposing a metal oxide semiconductor precursor
solution in an area to be formed to form a metal oxide
semiconductor precursor thin film, annealing the metal oxide
semiconductor precursor thin film to form a metal oxide
semiconductor thin film, patternizing the metal oxide semiconductor
thin film to form a metal oxide semiconductor active layer;
manufacturing process for the organic semiconductor active layer
comprising: disposing an organic semiconductor solution, baking the
organic semiconductor solution to obtain an organic semiconductor
thin film, and patternizing the organic semiconductor film to
obtain an organic semiconductor active layer; wherein the first
active layer being an N-type channel metal oxide semiconductor
active layer, and the second active layer being a P-type channel
organic semiconductor active layer; wherein Step 2 specifically
comprising: using a solution coating process and a baking process
sequentially to obtain a P-type organic semiconductor thin film
covering the substrate, the first gate, the first electrode, and
the second electrode, and an organic dielectric material thin film
on the P-type organic semiconductor thin film; using a vapor
deposition process or a sputtering process on the organic
dielectric material thin film to form a metal thin film covering
the organic dielectric material thin film, patternizing the metal
thin film to obtain the second gate, using the second gate as a
mask to perform dry etching simultaneously on the P-type organic
semiconductor thin film and the organic dielectric material thin
film to obtain the second active layer and the second gate
dielectric layer; wherein Step 4 specifically comprising: coating
an N-type metal oxide semiconductor precursor solution on the first
gate dielectric layer to form an N-type metal oxide semiconductor
precursor thin film, annealing the N-type metal oxide semiconductor
precursor thin film to obtain an N-type metal oxide semiconductor
thin film, patternizing the N-type metal oxide semiconductor thin
film to obtain the first active layer.
12. The manufacturing method for complementary TFT device as
claimed in claim 11, wherein the N-type metal oxide semiconductor
precursor solution is a metal halide solution dissolved in a
nitrile solvent; and the glycol solvent is used to control
thickness uniformity of the N-type metal oxidation semiconductor
precursor thin film when coating the N-type metal oxide
semiconductor precursor solution.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0001] The present invention relates to the field of display, and
in particular to a manufacturing method for complementary thin film
transistor (TFT) device and manufacturing method for organic
light-emitting diode (OLED) display panel.
2. The Related Arts
[0002] The flat display device, with the advantages of thin body,
saving power, no radiation and many others, has been widely used.
The known flat display device mainly comprises liquid crystal
display (LCD) and organic light emitting diode (OLED) display
device.
[0003] The organic light-emitting diode (OLED) panel has the
characteristics of active light-emitting, without backlight source,
high contrast, thinness, wide viewing angle, suitable for flexible
panel, wide operation temperature range, simple structure and
simple manufacturing process, and is regarded as the most promising
display technology.
[0004] The OLED display device generally comprises: a substrate, an
anode provided on the substrate, an organic light emitting layer
provided on the anode, an electron transport layer provided on the
organic light-emitting layer, and a cathode provided on the
electron transport layer. In operation, the holes from the anode
and the electrons from the cathode are emitted to the organic
light-emitting layer, and the combination of electrons and holes
generates an excited electron-hole pair, and the excited
electron-hole pairs are converted from the excited state to the
ground state to realize light.
[0005] The solution method for manufacturing electronic film,
electronic devices and electronic circuits has the advantages of
simple process, low cost and ability to realize large are. In
recent years, the research on the process of manufacturing
electronic film by solution method and solution-based electronic
devices make great progress, and the performance in many aspects
can be compared to, or even exceeds, the electronic film and
corresponding electronic devices manufactured by the traditional
vacuum process.
[0006] The complementary thin film transistor (TFT) device is
composed of P-type channel TFT and N-type channel TFT. The
complementary TFT device is a circuit commonly used in flat panel
display. The material for TFT active layer in the complementary TFT
device is usually a metal oxide semiconductor, and the production
process is usually complex and needs to use a large number of
vacuum equipment and high temperature equipment, resulting in high
production cost.
[0007] The organic thin film transistor (OTFT) is a TFT device
using an organic semiconductor material as active layer. The
solution method is a common method for preparing organic
semiconductor TFT, which has the advantages of simple process, low
cost and capability to realize large area.
SUMMARY OF THE INVENTION
[0008] The object of the present invention is to provide a
manufacturing method for complementary TFT device, able to reduce
production cost and increase competitiveness.
[0009] Another object of the present invention is to provide
manufacturing method for OLED display panel, able to reduce
production cost and increase competitiveness.
[0010] To achieve the above object, the present invention provides
a manufacturing method for complementary thin film transistor (TFT)
device, comprising the steps of:
[0011] Step 1: providing a substrate, forming a first gate, a first
electrode and a second electrode on the substrate, distributed with
gaps in-between;
[0012] Step 2: forming, in subsequent order, a stack of a second
active layer, a second gate dielectric layer, and a second gate at
a gap area between the first electrode and the second electrode,
and a portion of the gap area near the first electrode and the
second electrode;
[0013] Step 3: covering the substrate, the first gate, the first
electrode, the second electrode, the second gate with a first gate
dielectric layer, patternizing the first gate dielectric layer to
form a via above the first electrode to expose a portion of the
first electrode;
[0014] Step 4: forming a first active layer on the first gate
dielectric layer above the first gate;
[0015] Step 5: forming a third electrode and a fourth electrode
contacting respectively with two ends of the first active layer on
the first gate dielectric layer, the fourth electrode contacting
the first electrode through the via;
[0016] wherein one of the first active layer and the second active
layer being an N-type channel active layer and the other being a
P-type channel active layer; one of the first active layer and the
second active layer being a metal oxide semiconductor active layer
and the other being an organic semiconductor active layer;
[0017] manufacturing process for the metal oxide semiconductor
active layer comprising: disposing a metal oxide semiconductor
precursor solution in an area to be formed to form a metal oxide
semiconductor precursor thin film, annealing the metal oxide
semiconductor precursor thin film to form a metal oxide
semiconductor thin film, patternizing the metal oxide semiconductor
thin film to form a metal oxide semiconductor active layer;
[0018] manufacturing process for the organic semiconductor active
layer comprising: disposing an organic semiconductor solution,
baking the organic semiconductor solution to obtain an organic
semiconductor thin film, and patternizing the organic semiconductor
film to obtain an organic semiconductor active layer.
[0019] According to a preferred embodiment of the present
invention, the first active layer is an N-type channel metal oxide
semiconductor active layer, and the second active layer is a P-type
channel organic semiconductor active layer.
[0020] According to a preferred embodiment of the present
invention, Step 2 specifically comprises: using a solution coating
process and a baking process sequentially to obtain a P-type
organic semiconductor thin film covering the substrate, the first
gate, the first electrode, and the second electrode, and an organic
dielectric material thin film on the P-type organic semiconductor
thin film; using a vapor deposition process or a sputtering process
on the organic dielectric material thin film to form a metal thin
film covering the organic dielectric material thin film,
patternizing the metal thin film to obtain the second gate, using
the second gate as a mask to perform dry etching simultaneously on
the P-type organic semiconductor thin film and the organic
dielectric material thin film to obtain the second active layer and
the second gate dielectric layer.
[0021] According to a preferred embodiment of the present
invention, Step 4 specifically comprises: coating an N-type metal
oxide semiconductor precursor solution on the first gate dielectric
layer to form an N-type metal oxide semiconductor precursor thin
film, annealing the N-type metal oxide semiconductor precursor thin
film to obtain an N-type metal oxide semiconductor thin film,
patternizing the N-type metal oxide semiconductor thin film to
obtain the first active layer.
[0022] According to a preferred embodiment of the present
invention, the N-type metal oxide semiconductor precursor solution
is a metal halide solution dissolved in a nitrile solvent; and he
glycol solvent is used to control thickness uniformity of the
N-type metal oxidation semiconductor precursor thin film when
coating the N-type metal oxide semiconductor precursor
solution.
[0023] The present invention also provides a manufacturing method
for organic light-emitting diode (OLED) display panel, comprising
the steps of:
[0024] Step 1': providing a substrate, forming a first gate, a
first electrode, a second electrode, and a capacitor lower
electrode plate on the substrate, distributed with gaps
in-between;
[0025] Step 2': forming, in subsequent order, a stack of a second
active layer, a second gate dielectric layer, and a second gate at
a gap area between the first electrode and the second electrode,
and a portion of the gap area near the first electrode and the
second electrode;
[0026] Step 3': covering the substrate, the first gate, the first
electrode, the second electrode, the second gate with a first gate
dielectric layer, patternizing the first gate dielectric layer to
respectively form a first via above the first electrode and a
second via above the second gate, the first via and the second via
respectively exposing a portion of the first electrode and a
portion of the second gate;
[0027] Step 4': forming a first active layer on the first gate
dielectric layer above the first gate;
[0028] Step 5': on the first gate dielectric layer, forming a third
electrode and a fourth electrode contacting respectively with two
ends of the first active layer, and a capacitor upper electrode
plate above the capacitor lower electrode plate, the fourth
electrode contacting the first electrode through the first via, and
the capacitor upper electrode plate contacting the second gate
through the second via;
[0029] Step 6': forming a planarization layer, on the third
electrode, the fourth electrode, the capacitor upper electrode
plate, the first active layer, and the first gate dielectric layer;
forming on the planarization layer, in subsequent order of, a pixel
electrode, a pixel definition layer and an organic light-emitting
layer;
[0030] wherein one of the first active layer and the second active
layer being an N-type channel active layer and the other being a
P-type channel active layer; one of the first active layer and the
second active layer being a metal oxide semiconductor active layer
and the other being an organic semiconductor active layer;
[0031] manufacturing process for the metal oxide semiconductor
active layer comprising: disposing a metal oxide semiconductor
precursor solution in an area to be formed to form a metal oxide
semiconductor precursor thin film, annealing the metal oxide
semiconductor precursor thin film to form a metal oxide
semiconductor thin film, patternizing the metal oxide semiconductor
thin film to form a metal oxide semiconductor active layer;
[0032] manufacturing process for the organic semiconductor active
layer comprising: disposing an organic semiconductor solution,
baking the organic semiconductor solution to obtain an organic
semiconductor thin film, and patternizing the organic semiconductor
film to obtain an organic semiconductor active layer.
[0033] According to a preferred embodiment of the present
invention, the first active layer is an N-type channel metal oxide
semiconductor active layer, and the second active layer is a P-type
channel organic semiconductor active layer.
[0034] According to a preferred embodiment of the present
invention, Step 2' specifically comprises: using a solution coating
process and a baking process sequentially to obtain a P-type
organic semiconductor thin film covering the substrate, the first
gate, the first electrode, and the second electrode, and an organic
dielectric material thin film on the P-type organic semiconductor
thin film; using a vapor deposition process or a sputtering process
on the organic dielectric material thin film to form a metal thin
film covering the organic dielectric material thin film,
patternizing the metal thin film to obtain the second gate, using
the second gate as a mask to perform dry etching simultaneously on
the P-type organic semiconductor thin film and the organic
dielectric material thin film to obtain the second active layer and
the second gate dielectric layer.
[0035] According to a preferred embodiment of the present
invention, Step 4' specifically comprises: coating an N-type metal
oxide semiconductor precursor solution on the first gate dielectric
layer to form an N-type metal oxide semiconductor precursor thin
film, annealing the N-type metal oxide semiconductor precursor thin
film to obtain an N-type metal oxide semiconductor thin film,
patternizing the N-type metal oxide semiconductor thin film to
obtain the first active layer.
[0036] According to a preferred embodiment of the present
invention, the N-type metal oxide semiconductor precursor solution
is a metal halide solution dissolved in a nitrile solvent; and the
glycol solvent is used to control thickness uniformity of the
N-type metal oxidation semiconductor precursor thin film when
coating the N-type metal oxide semiconductor precursor
solution.
[0037] The present invention further provides a manufacturing
method for complementary thin film transistor (TFT) device,
comprising the steps of:
[0038] Step 1: providing a substrate, forming a first gate, a first
electrode and a second electrode on the substrate, distributed with
gaps in-between;
[0039] Step 2: forming, in subsequent order, a stack of a second
active layer, a second gate dielectric layer, and a second gate at
a gap area between the first electrode and the second electrode,
and a portion of the gap area near the first electrode and the
second electrode;
[0040] Step 3: covering the substrate, the first gate, the first
electrode, the second electrode, the second gate with a first gate
dielectric layer, patternizing the first gate dielectric layer to
form a via above the first electrode to expose a portion of the
first electrode;
[0041] Step 4: forming a first active layer on the first gate
dielectric layer above the first gate;
[0042] Step 5: forming a third electrode and a fourth electrode
contacting respectively with two ends of the first active layer on
the first gate dielectric layer, the fourth electrode contacting
the first electrode through the via;
[0043] wherein one of the first active layer and the second active
layer being an N-type channel active layer and the other being a
P-type channel active layer; one of the first active layer and the
second active layer being a metal oxide semiconductor active layer
and the other being an organic semiconductor active layer;
[0044] manufacturing process for the metal oxide semiconductor
active layer comprising: disposing a metal oxide semiconductor
precursor solution in an area to be formed to form a metal oxide
semiconductor precursor thin film, annealing the metal oxide
semiconductor precursor thin film to form a metal oxide
semiconductor thin film, patternizing the metal oxide semiconductor
thin film to form a metal oxide semiconductor active layer;
[0045] manufacturing process for the organic semiconductor active
layer comprising: disposing an organic semiconductor solution,
baking the organic semiconductor solution to obtain an organic
semiconductor thin film, and patternizing the organic semiconductor
film to obtain an organic semiconductor active layer;
[0046] wherein the first active layer being an N-type channel metal
oxide semiconductor active layer, and the second active layer being
a P-type channel organic semiconductor active layer;
[0047] wherein Step 2 specifically comprising: using a solution
coating process and a baking process sequentially to obtain a
P-type organic semiconductor thin film covering the substrate, the
first gate, the first electrode, and the second electrode, and an
organic dielectric material thin film on the P-type organic
semiconductor thin film; using a vapor deposition process or a
sputtering process on the organic dielectric material thin film to
form a metal thin film covering the organic dielectric material
thin film, patternizing the metal thin film to obtain the second
gate, using the second gate as a mask to perform dry etching
simultaneously on the P-type organic semiconductor thin film and
the organic dielectric material thin film to obtain the second
active layer and the second gate dielectric layer;
[0048] wherein Step 4 specifically comprising: coating an N-type
metal oxide semiconductor precursor solution on the first gate
dielectric layer to form an N-type metal oxide semiconductor
precursor thin film, annealing the N-type metal oxide semiconductor
precursor thin film to obtain an N-type metal oxide semiconductor
thin film, patternizing the N-type metal oxide semiconductor thin
film to obtain the first active layer.
[0049] Compared to the known techniques, the present invention
provides the following advantages: the present invention provides a
manufacturing method for complementary TFT device. The method uses
a solution method to continuously form a metal oxide semiconductor
TFT and an organic semiconductor TFT; the metal oxide semiconductor
TFT and the organic semiconductor TFT are electrically connected,
and one of the metal oxide semiconductor TFT and the organic
semiconductor TFT is an N-type channel TFT, and the other is a
P-type channel TFT. The method can reduce the use of vacuum
apparatus and high temperature apparatus, and explore the
advantages of the solution method to realize large area and
low-cost to reduce production costs and increase product
competitiveness. The present invention also provides a
manufacturing method for OLED display panel, able to reduce
production cost and increase product competitiveness.
BRIEF DESCRIPTION OF THE DRAWINGS
[0050] To make the technical solution of the embodiments according
to the present invention, a brief description of the drawings that
are necessary for the illustration of the embodiments will be given
as follows. Apparently, the drawings described below show only
example embodiments of the present invention and for those having
ordinary skills in the art, other drawings may be easily obtained
from these drawings without paying any creative effort. In the
drawings:
[0051] FIG. 1 is a schematic view showing Step 1 of the
manufacturing method for complementary TFT device according to the
present invention;
[0052] FIG. 2 is a schematic view showing Step 2 of the
manufacturing method for complementary TFT device according to the
present invention;
[0053] FIG. 3 is a schematic view showing Step 3 of the
manufacturing method for complementary TFT device according to the
present invention;
[0054] FIG. 4 is a schematic view showing Step 4 of the
manufacturing method for complementary TFT device according to the
present invention;
[0055] FIG. 5 is a schematic view showing Step 5 of the
manufacturing method for complementary TFT device according to the
present invention;
[0056] FIG. 6 is a schematic view showing Step 1' of the
manufacturing method for OLED display panel according to the
present invention;
[0057] FIG. 7 is a schematic view showing Step 2' of the
manufacturing method for OLED display panel according to the
present invention;
[0058] FIG. 8 is a schematic view showing Step 3' of the
manufacturing method for OLED display panel according to the
present invention;
[0059] FIG. 9 is a schematic view showing Step 4' of the
manufacturing method for OLED display panel according to the
present invention;
[0060] FIG. 10 is a schematic view showing Step 5' of the
manufacturing method for OLED display panel according to the
present invention;
[0061] FIG. 11 is a schematic view showing Step 6' of the
manufacturing method for OLED display panel according to the
present invention;
[0062] FIG. 12 is a schematic view showing the flowchart of the
manufacturing method for complementary TFT device according to the
present invention;
[0063] FIG. 13 is a schematic view showing the flowchart of the
manufacturing method for OLED display panel according to the
present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0064] To further explain the technical means and effect of the
present invention, the following refers to embodiments and drawings
for detailed description.
[0065] Refer to FIG. 12. The present invention provides a
manufacturing method for complementary thin film transistor (TFT)
device, comprising the steps of:
[0066] Step 1: as shown in FIG. 1, providing a substrate 1, forming
a first gate 11, a first electrode 21 and a second electrode 22 on
the substrate 1, distributed with gaps in-between.
[0067] Specifically, in Step 1, a metal thin film is formed on the
substrate 1 by vapor deposition or sputtering, and then the metal
thin film is patternized to obtain the first gate 11, the first
electrode 21, and the second electrode 22; and the material for the
metal thin film is preferably a combination of one or more of
metals such as aluminum, molybdenum, and copper.
[0068] Step 2: as shown in FIG. 2, forming, in subsequent order, a
stack of a second active layer 23, a second gate dielectric layer
24, and a second gate 25 at a gap area between the first electrode
21 and the second electrode 22, and a portion of the gap area near
the first electrode 21 and the second electrode 22.
[0069] Step 3: as shown in FIG. 3, covering the substrate 1, the
first gate 11, the first electrode 21, the second electrode 22, the
second gate 25 with a first gate dielectric layer 12, patternizing
the first gate dielectric layer 12 to form a via 26 above the first
electrode 21 to expose a portion of the first electrode 21.
[0070] Step 4: as shown in FIG. 4, forming a first active layer 13
on the first gate dielectric layer 12 above the first gate 11.
[0071] Step 5: as shown in FIG. 5, forming a third electrode 14 and
a fourth electrode 15 contacting respectively with two ends of the
first active layer 13 on the first gate dielectric layer 12, the
fourth electrode 15 contacting the first electrode 21 through the
via 26.
[0072] Specifically, the first gate 11, the first active layer 13,
the third electrode 14, and the fourth electrode 15 form a first
TFT. Optionally, the third electrode 14 and the fourth electrode 15
are the source and the drain of the first TFT, respectively. The
second gate 25, the second active layer 23, the first electrode 21,
and the second electrode 22 form a second TFT. Optionally, the
first electrode 21 and the second electrode 22 are the source and
the drain of the second TFT, respectively.
[0073] It should be noted that in the manufacturing method for
complementary TFT provided by the present invention, one of the
first active layer 13 and the second active layer 23 is an N-type
channel active layer and the other is a P-type channel active
layer; one of the first active layer 13 and the second active layer
23 is a metal oxide semiconductor active layer and the other is an
organic semiconductor active layer.
[0074] It should also be noted that both the metal oxide
semiconductor active layer and the organic semiconductor active
layer are fabricated by a solution method. Specifically, the
manufacturing process for the metal oxide semiconductor active
layer comprises: disposing a metal oxide semiconductor precursor
solution in an area to be formed to form a metal oxide
semiconductor precursor thin film, annealing the metal oxide
semiconductor precursor thin film to form a metal oxide
semiconductor thin film, patternizing the metal oxide semiconductor
thin film to form a metal oxide semiconductor active layer;
[0075] The manufacturing process for the organic semiconductor
active layer comprises: disposing an organic semiconductor
solution, baking the organic semiconductor solution to obtain an
organic semiconductor thin film, and patternizing the organic
semiconductor film to obtain an organic semiconductor active
layer.
[0076] In a preferred embodiment of the present invention, the
first active layer 13 is an N-type channel metal oxide
semiconductor active layer, and the second active layer 23 is a
P-type channel organic semiconductor active layer.
[0077] Accordingly, Step 2 specifically comprises: using a solution
coating process and a baking process sequentially to obtain a
P-type organic semiconductor thin film covering the substrate 1,
the first gate 11, the first electrode 21, and the second electrode
22, and an organic dielectric material thin film on the P-type
organic semiconductor thin film; using a vapor deposition process
or a sputtering process on the organic dielectric material thin
film to form a metal thin film covering the organic dielectric
material thin film, patternizing the metal thin film to obtain the
second gate 25, using the second gate 25 as a mask to perform dry
etching simultaneously on the P-type organic semiconductor thin
film and the organic dielectric material thin film to obtain the
second active layer 23 and the second gate dielectric layer 23. The
organic semiconductor thin film and the organic dielectric material
thin film are all fabricated by solution coating and baking
processes.
[0078] Correspondingly, Step 4 specifically comprises: coating an
N-type metal oxide semiconductor precursor solution on the first
gate dielectric layer 12 to form an N-type metal oxide
semiconductor precursor thin film, annealing the N-type metal oxide
semiconductor precursor thin film to obtain an N-type metal oxide
semiconductor thin film, patternizing the N-type metal oxide
semiconductor thin film to obtain the first active layer 13.
[0079] Moreover, the N-type metal oxide semiconductor precursor
solution is a metal halide solution dissolved in a nitrile solvent;
and he glycol solvent is used to control thickness uniformity of
the N-type metal oxidation semiconductor precursor thin film when
coating the N-type metal oxide semiconductor precursor solution.
More specifically, the metal halide may be indium trichloride
(InCl3), and the metal oxide semiconductor may be a metal oxide
semiconductor of a metal such as indium (In), gallium (Ga), zinc
(Zn), or tin (Sn). The process of patternizing the N-type metal
oxide semiconductor thin film comprises exposure, development, and
etching.
[0080] It should be noted, in addition to, that the first active
layer 13 is an N-type channel metal oxide semiconductor active
layer, and the second active layer 23 is a P-type channel organic
semiconductor active layer in the above embodiment, the present
invention is also applicable to other embodiments, for example, the
first active layer 13 is a P-type channel metal oxide semiconductor
active layer, and the second active layer 23 is an N-type channel
organic semiconductor active layer; the second active layer 23 is a
P-type channel metal oxide semiconductor active layer, and the
first active layer 13 is an N-type channel organic semiconductor
active layer; the second active layer 23 is an N-type channel metal
oxide semiconductor active layer, and the first active layer 13 is
a P-type channel organic semiconductor active layer.
[0081] Refer to FIG. 13. The present invention also provides a
manufacturing method for organic light-emitting diode (OLED)
display panel. The OLED display panel comprises the aforementioned
complementary TFT devices. The manufacturing method for OLED
display panel comprises the steps of:
[0082] Step 1': as shown in FIG. 6, providing a substrate 10,
forming a first gate 110, a first electrode 210, a second electrode
220, and a capacitor lower electrode plate 230 on the substrate 1
distributed with gaps in-between.
[0083] Specifically, in Step 1', a metal thin film is formed on the
substrate 10 by vapor deposition or sputtering, and then the metal
thin film is patternized to obtain the first gate 110, the first
electrode 210, the second electrode 22, and the capacitor lower
electrode plate 230; and the material for the metal thin film is
preferably a combination of one or more of metals such as aluminum,
molybdenum, and copper.
[0084] Preferably, the OLED display panel is a flexible OLED
display panel, and the substrate 10 comprises: a glass substrate
101, and a flexible substrate 102 disposed on the glass substrate
101.
[0085] Step 2': as shown in FIG. 7, forming, in subsequent order, a
stack of a second active layer 230, a second gate dielectric layer
240, and a second gate 250 at a gap area between the first
electrode 210 and the second electrode 220, and a portion of the
gap area near the first electrode 210 and the second electrode
220.
[0086] Step 3': as shown in FIG. 8, covering the substrate 10, the
first gate 110, the first electrode 210, the second electrode 220,
the second gate 250 with a first gate dielectric layer 120,
patternizing the first gate dielectric layer 120 to respectively
form a first via 260 above the first electrode 210 and a second via
270 above the second gate 250, the first via 260 and the second via
270 respectively exposing a portion of the first electrode 210 and
a portion of the second gate 250.
[0087] Step 4': as shown in FIG. 9, forming a first active layer
130 on the first gate dielectric layer 120 above the first gate
110.
[0088] Step 5': as shown in FIG. 10, on the first gate dielectric
layer, 120 forming a third electrode 140 and a fourth electrode 150
contacting respectively with two ends of the first active layer
130, and a capacitor upper electrode plate 320 above the capacitor
lower electrode plate 310, the fourth electrode 150 contacting the
first electrode 210 through the first via 260, and the capacitor
upper electrode plate 320 contacting the second gate 250 through
the second via 270.
[0089] Step 6': as shown in FIG. 11, forming a planarization layer
400, on the third electrode 140, the fourth electrode 150, the
capacitor upper electrode plate 320, the first active layer 130,
and the first gate dielectric layer 120; forming on the
planarization layer 400, in subsequent order of, a pixel electrode
500, a pixel definition layer 600 and an organic light-emitting
layer 700.
[0090] Specifically, the planarization layer 400 comprises: an
inorganic passivation layer and an organic planarization layer
provided in a stack, the pixel electrode 500 contacting with the
third electrode 140 through a via penetrating the planarization
layer 400. An area of the pixel defining layer 600 forms a groove
corresponding to the pixel electrode 500 for exposing the pixel
electrode 500. The organic light-emitting layer 700 is formed in
the grove and contacts with the pixel electrode 500. An
encapsulation layer (not shown) is also formed on the organic light
emitting layer 700.
[0091] Specifically, the first gate 110, the first active layer
130, the third electrode 140, and the fourth electrode 150 form a
first TFT. Optionally, the third electrode 140 and the fourth
electrode 150 are the source and the drain of the first TFT,
respectively. The second gate 250, the second active layer 230, the
first electrode 210, and the second electrode 220 form a second
TFT. Optionally, the first electrode 210 and the second electrode
220 are the source and the drain of the second TFT, respectively.
The capacitor upper electrode plate 320 and the capacitor lower
electrode plate 310 form a capacitor.
[0092] It should be noted that one of the first active layer 130
and the second active layer 230 is an N-type channel active layer
and the other is a P-type channel active layer; one of the first
active layer 130 and the second active layer 230 is a metal oxide
semiconductor active layer and the other is an organic
semiconductor active layer;
[0093] It should also be noted that both the metal oxide
semiconductor active layer and the organic semiconductor active
layer are fabricated by a solution method. Specifically, the
manufacturing process for the metal oxide semiconductor active
layer comprising: disposing a metal oxide semiconductor precursor
solution in an area to be formed to form a metal oxide
semiconductor precursor thin film, annealing the metal oxide
semiconductor precursor thin film to form a metal oxide
semiconductor thin film, patternizing the metal oxide semiconductor
thin film to form a metal oxide semiconductor active layer;
[0094] The manufacturing process for the organic semiconductor
active layer comprising: disposing an organic semiconductor
solution, baking the organic semiconductor solution to obtain an
organic semiconductor thin film, and patternizing the organic
semiconductor film to obtain an organic semiconductor active
layer.
[0095] In a preferred embodiment of the present invention, the
first active layer 130 is an N-type channel metal oxide
semiconductor active layer, and the second active layer 230 is a
P-type channel organic semiconductor active layer.
[0096] According to a preferred embodiment of the present
invention, Step 2' specifically comprises: using a solution coating
process and a baking process sequentially to obtain a P-type
organic semiconductor thin film covering the substrate 10, the
first gate 110, the first electrode 210, and the second electrode
220, and an organic dielectric material thin film on the P-type
organic semiconductor thin film; using a vapor deposition process
or a sputtering process on the organic dielectric material thin
film to form a metal thin film covering the organic dielectric
material thin film, patternizing the metal thin film to obtain the
second gate 250, using the second gate 250 as a mask to perform dry
etching simultaneously on the P-type organic semiconductor thin
film and the organic dielectric material thin film to obtain the
second active layer 230 and the second gate dielectric layer 240.
The organic semiconductor thin film and the organic dielectric
material thin film are all fabricated by solution coating and
baking processes.
[0097] Correspondingly, Step 4' specifically comprises: coating an
N-type metal oxide semiconductor precursor solution on the first
gate dielectric layer 120 to form an N-type metal oxide
semiconductor precursor thin film, annealing the N-type metal oxide
semiconductor precursor thin film to obtain an N-type metal oxide
semiconductor thin film, patternizing the N-type metal oxide
semiconductor thin film to obtain the first active layer 130.
[0098] Moreover, the N-type metal oxide semiconductor precursor
solution is a metal halide solution dissolved in a nitrile solvent;
and he glycol solvent is used to control thickness uniformity of
the N-type metal oxidation semiconductor precursor thin film when
coating the N-type metal oxide semiconductor precursor solution.
More specifically, the metal halide may be indium trichloride
(InCl3), and the metal oxide semiconductor may be a metal oxide
semiconductor of a metal such as indium (In), gallium (Ga), zinc
(Zn), or tin (Sn). The process of patternizing the N-type metal
oxide semiconductor thin film comprises exposure, development, and
etching.
[0099] It should be noted, in addition to, that the first active
layer 130 is an N-type channel metal oxide semiconductor active
layer, and the second active layer 230 is a P-type channel organic
semiconductor active layer in the above embodiment, the present
invention is also applicable to other embodiments, for example, the
first active layer 130 is a P-type channel metal oxide
semiconductor active layer, and the second active layer 230 is an
N-type channel organic semiconductor active layer; the second
active layer 230 is a P-type channel metal oxide semiconductor
active layer, and the first active layer 130 is an N-type channel
organic semiconductor active layer; the second active layer 230 is
an N-type channel metal oxide semiconductor active layer, and the
first active layer 130 is a P-type channel organic semiconductor
active layer.
[0100] In summary, the present invention provides a manufacturing
method for complementary TFT device. The method uses a solution
method to continuously form a metal oxide semiconductor TFT and an
organic semiconductor TFT; the metal oxide semiconductor TFT and
the organic semiconductor TFT are electrically connected, and one
of the metal oxide semiconductor TFT and the organic semiconductor
TFT is an N-type channel TFT, and the other is a P-type channel
TFT. The method can reduce the use of vacuum apparatus and high
temperature apparatus, and explore the advantages of the solution
method to realize large area and low-cost to reduce production
costs and increase product competitiveness. The present invention
also provides a manufacturing method for OLED display panel, able
to reduce production cost and increase product competitiveness.
[0101] Embodiments of the present invention have been described,
but not intending to impose any unduly constraint to the appended
claims. Any modification of equivalent structure or equivalent
process made according to the disclosure and drawings of the
present invention, or any application thereof, directly or
indirectly, to other related fields of technique, is considered
encompassed in the scope of protection defined by the clams of the
present invention.
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