U.S. patent application number 15/937872 was filed with the patent office on 2018-10-04 for polishing pad and polishing method.
This patent application is currently assigned to IV Technologies CO., Ltd.. The applicant listed for this patent is IV Technologies CO., Ltd.. Invention is credited to Chin-Chih Chen, I-Ping Chen.
Application Number | 20180281154 15/937872 |
Document ID | / |
Family ID | 63672798 |
Filed Date | 2018-10-04 |
United States Patent
Application |
20180281154 |
Kind Code |
A1 |
Chen; Chin-Chih ; et
al. |
October 4, 2018 |
POLISHING PAD AND POLISHING METHOD
Abstract
A polishing pad is provided. The polishing pad, suitable for a
polishing process, includes a polishing layer, an adhesive layer
and at least one heat storage material. The polishing layer has a
polishing surface and a back surface opposite to each other. The
adhesive layer is disposed on the back surface of the polishing
layer. A region where the at least one heat storage material is
disposed is located above the adhesive layer.
Inventors: |
Chen; Chin-Chih; (Nantou
County, TW) ; Chen; I-Ping; (Tainan City,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
IV Technologies CO., Ltd. |
Taichung City |
|
TW |
|
|
Assignee: |
IV Technologies CO., Ltd.
Taichung City
TW
|
Family ID: |
63672798 |
Appl. No.: |
15/937872 |
Filed: |
March 28, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B24D 13/18 20130101;
B24B 37/26 20130101; B24B 37/24 20130101; B24B 37/22 20130101 |
International
Class: |
B24D 13/18 20060101
B24D013/18 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 31, 2017 |
TW |
106111034 |
Claims
1. A polishing pad suitable for a polishing process, the polishing
pad comprising: a polishing layer having a polishing surface and a
back surface opposite to each other; an adhesive layer disposed on
the back surface of the polishing layer; and at least one heat
storage material, wherein a region where the at least one heat
storage material is disposed is located above the adhesive
layer.
2. The polishing pad of claim 1, wherein the at least one heat
storage material is dispersed in a material of the polishing
layer.
3. The polishing pad of claim 1, wherein the at least one heat
storage material forms an interface layer in the region where the
at least one heat storage material is disposed, and the interface
layer is disposed above the adhesive layer.
4. The polishing pad of claim 1, further comprising at least one
groove disposed in the polishing surface of the polishing layer,
wherein the region where the at least one heat storage material is
disposed does not contact a bottom of the at least one groove.
5. The polishing pad of claim 4, wherein the at least one groove
has a groove depth D from the bottom of the at least one groove to
the polishing surface, and a distance from a top edge of the region
where the at least one heat storage material is disposed to the
polishing surface is smaller than or equal to 1.5 D and larger than
D.
6. The polishing pad of claim 1, wherein a lowest temperature of
the polishing pad is Tmin and a highest temperature of the
polishing pad is Tmax during the polishing process, and the at
least one heat storage material undergoes an endothermic reaction
at a temperature between the Tmin and the Tmax.
7. The polishing pad of claim 6, wherein a molecular arrangement of
the at least one heat storage material after the endothermic
reaction is looser than a molecular arrangement of the at least one
heat storage material before the endothermic reaction.
8. The polishing pad of claim 6, wherein the at least one heat
storage material undergoes a phase transition from a first solid
state to a second solid state during the endothermic reaction, and
molecular arrangements of the first solid state and the second
solid state are different.
9. The polishing pad of claim 1, wherein the at least one heat
storage material comprises an inorganic heat storage material, an
organic heat storage material, or a combination thereof.
10. The polishing pad of claim 9, wherein the inorganic heat
storage material comprises a hydrate of a salt.
11. The polishing pad of claim 9, wherein the organic heat storage
material comprises a polyol, a fatty alcohol, a fatty acid, or an
alkane.
12. The polishing pad of claim 1, further comprising a cover layer
covering the at least one heat storage material.
13. The polishing pad of claim 12, wherein a material of the cover
layer does not chemically react with a material of the polishing
layer or the at least one heat storage material.
14. The polishing pad of claim 1, further comprising a polishing
track region for placing a first heat storage material and a
non-polishing track region for placing a second heat storage
material, wherein a lowest temperature of the polishing pad is Tmin
and a highest temperature of the polishing pad is Tmax during the
polishing process, and the first heat storage material and second
heat storage material respectively undergo endothermic reactions at
different temperatures between the Tmin and the Tmax.
15. The polishing pad of claim 14, wherein a temperature of the
endothermic reaction of the first heat storage material is lower
than a temperature of the endothermic reaction of the second heat
storage material.
16. The polishing pad of claim 14, wherein a heat absorption
capacity of the first heat storage material is more than a heat
absorption capacity of the second heat storage material.
17. A polishing pad suitable for a polishing process, the polishing
pad comprising: a polishing layer; a base layer disposed below the
polishing layer; a first adhesive layer disposed between the
polishing layer and the base layer; a second adhesive layer
disposed below the base layer; and at least one heat storage
material, wherein a region where the at least one heat storage
material is disposed is located between the first adhesive layer
and the second adhesive layer.
18. The polishing pad of claim 17, wherein the base layer has a
thickness T, and a distance from a top edge of the region where the
at least one heat storage material is disposed to a bottom edge of
the region where the at least one heat storage material is disposed
is from T/3 to T.
19. The polishing pad of claim 17, wherein the at least one heat
storage material is dispersed in a material of the base layer.
20. The polishing pad of claim 19, wherein the region where the at
least one heat storage material is disposed covers the entire base
layer, or is located at at least one of the following locations:
(a) a portion of the base layer adjacent to the first adhesive
layer, and (b) a portion of the base layer adjacent to the second
adhesive layer.
21. The polishing pad of claim 17, wherein the at least one heat
storage material forms an interface layer in the region where the
at least one heat storage material is disposed, and the interface
layer is located at at least one of the following locations: (c)
between the base layer and the first adhesive layer; and (d)
between the base layer and the second adhesive layer.
22. The polishing pad of claim 17, wherein a lowest temperature of
the polishing pad is Tmin and a highest temperature of the
polishing pad is Tmax during the polishing process, and the at
least one heat storage material undergoes an endothermic reaction
at a temperature between the Tmin and the Tmax.
23. The polishing pad of claim 22, wherein a molecular arrangement
of the at least one heat storage material after the endothermic
reaction is looser than a molecular arrangement of the at least one
heat storage material before the endothermic reaction.
24. The polishing pad of claim 22, wherein the at least one heat
storage material undergoes a phase transition from a first solid
state to a second solid state during the endothermic reaction, and
molecular arrangements of the first solid state and the second
solid state are different.
25. The polishing pad of claim 17, wherein the at least one heat
storage material comprises an inorganic heat storage material, an
organic heat storage material, or a combination thereof.
26. The polishing pad of claim 25, wherein the inorganic heat
storage material comprises a hydrate of a salt.
27. The polishing pad of claim 25, wherein the organic heat storage
material comprises a polyol, a fatty alcohol, a fatty acid, or an
alkane.
28. The polishing pad of claim 17, further comprising a cover layer
covering the at least one heat storage material.
29. The polishing pad of claim 28, wherein a material of the cover
layer does not chemically react with a material of the polishing
layer or the at least one heat storage material.
30. The polishing pad of claim 17, further comprising a polishing
track region for placing a first heat storage material and a
non-polishing track region for placing a second heat storage
material, wherein a lowest temperature of the polishing pad is Tmin
and a highest temperature of the polishing pad is Tmax during the
polishing process, and the first heat storage material and second
heat storage material respectively undergo endothermic reactions at
different temperatures between the Tmin and the Tmax.
31. The polishing pad of claim 30, wherein a temperature of the
endothermic reaction of the first heat storage material is lower
than a temperature of the endothermic reaction of the second heat
storage material.
32. The polishing pad of claim 30, wherein a heat absorption
capacity of the first heat storage material is more than a heat
absorption capacity of the second heat storage material.
33. A polishing method suitable for polishing an object, the
polishing method comprising: providing a polishing pad, wherein the
polishing pad is the polishing pad according to claim 1; applying a
pressure to the object to press the object on the polishing pad;
and providing relative motion to the object and the polishing pad
to perform the polishing process.
34. A polishing method suitable for polishing an object, the
polishing method comprising: providing a polishing pad, wherein the
polishing pad is the polishing pad according to claim 17; applying
a pressure to the object to press the object on the polishing pad;
and providing relative motion to the object and the polishing pad
to perform the polishing process.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the priority benefit of Taiwan
application serial no. 106111034, filed on Mar. 31, 2017. The
entirety of the above-mentioned patent application is hereby
incorporated by reference herein and made a part of this
specification.
BACKGROUND
1. Field of the Invention
[0002] This invention is related to a polishing pad and a polishing
method, especially related to a polishing pad that the temperature
thereof may be decreased during a polishing process and a polishing
method using the same polishing pad.
2. Description of Related Art
[0003] In the industrial component manufacturing process, a
polishing process is a technique that is more commonly used today
to planarize the surface of an object being polished. In the
polishing process, a polishing fluid is provided between the
surface of an object and a polishing pad. The planarization is
performed by mechanical friction caused by the relative motion of
the object and the polishing pad with each other. The interface
between the layers of the polishing pad is usually adhered by using
an adhesive layer. However, the temperature of the polishing pad
may increase due to the friction generated during the polishing
process. Therefore, the adhesive layer is prone to deterioration,
deformation or adhesion decay to affect the stability of the
polishing process.
[0004] Accordingly, there is a need to provide a means for
decreasing the temperature of a polishing pad during a polishing
process, so that the industry may has a choice to solve the problem
above.
SUMMARY
[0005] This invention provides a polishing pad and a polishing
method to decrease the temperature of a polish pad during a
polishing process, so as to avoid the problem that the adhesive
layer deteriorates, deforms or decreases in adhesion due to high
temperature during the polishing process.
[0006] In some embodiments of this invention, the polishing pad is
suitable to be used in a polishing process. The polishing pad
includes a polishing layer, an adhesive layer, and at least one
heat storage material. The polishing layer has a polishing surface
and a back surface opposite to each other. The adhesive layer is
disposed on the back surface of the polishing layer. A region where
the at least one heat storage material is disposed is located above
the adhesive layer.
[0007] In some other embodiments of this invention, the polishing
pad is suitable to be used in a polishing process. The polishing
pad includes a polishing layer, a base layer, a first adhesive
layer, a second adhesive layer, and at least one heat storage
material. The base layer is disposed below the polishing layer. The
first adhesive layer is disposed between the polishing layer and
the base layer. The second adhesive layer is disposed below the
base layer. A region where the at least one heat storage material
is disposed is located between the first adhesive layer and the
second adhesive layer.
[0008] In some other embodiments of this invention, the polishing
method is suitable for polishing an object and includes the
following steps: providing a polishing pad, wherein the polishing
pad is any one of the polishing pads described above; applying a
pressure to the object to press the object on the polishing pad;
and providing relative motion to the object and the polishing pad
to perform the polishing process.
[0009] Accordingly, the polishing pad of this invention may reduce
the degree of temperature increase of the polishing pad due to
mechanical friction when the polishing pad is used to perform a
polishing process through the region where the at least one heat
storage material is disposed is located above on the adhesive layer
or between the first adhesive layer and the second adhesive layer.
Thus, the problem that the adhesive layer deteriorates, deforms or
decreases in adhesion due to high temperature during the polishing
process is avoided.
[0010] In order to make the aforementioned and other features and
advantages of the invention comprehensible, several exemplary
embodiments accompanied with figures are described in detail
below.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] The accompanying drawings are included to provide a further
understanding of the invention, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments of the invention and, together with the description,
serve to explain the principles of the invention.
[0012] FIG. 1 is a diagram showing a top view of a polishing pad
according to a first embodiment of the invention.
[0013] FIG. 2 is a cross-sectional diagram taking along the
cross-sectional line I-I' of FIG. 1.
[0014] FIG. 3 is a diagram showing the relationship between time of
polishing an object and polishing pad temperature of a polishing
pad of the invention and a conventional polishing pad.
[0015] FIG. 4 is a cross-sectional diagram illustrating a polishing
pad along a radius direction according to a second embodiment of
the invention.
[0016] FIG. 5 is a diagram showing the relationship between
temperature and heat flow rate of the two heat storage materials of
the invention.
[0017] FIG. 6 is a cross-sectional diagram illustrating a polishing
pad along a radius direction according to a third embodiment of the
invention.
[0018] FIG. 7 is a cross-sectional diagram illustrating a polishing
pad along a radius direction according to a fourth embodiment of
the invention.
[0019] FIG. 8 is a cross-sectional diagram illustrating a polishing
pad along a radius direction according to a fifth embodiment of the
invention.
[0020] FIG. 9 is a cross-sectional diagram illustrating a polishing
pad along a radius direction according to a sixth embodiment of the
invention.
[0021] FIG. 10 is a process flow diagram showing a polishing method
according to an embodiment of the invention.
DESCRIPTION OF THE EMBODIMENTS
[0022] FIG. 1 is a diagram showing a top view of a polishing pad
according to a first embodiment of the invention. FIG. 2 is a
cross-sectional diagram taking along the cross-sectional line I-I'
of FIG. 1. In detail, the cross-sectional line I-I' is set along
the radius direction. Namely, FIG. 2 is a cross-sectional diagram
along the radius direction of the polishing pad in FIG. 1.
[0023] Please refer to FIGS. 1 and 2. In this embodiment, a
polishing pad 100 includes a polishing track region A and a
non-polishing track region B, wherein the polishing track region A
is surrounded by the non-polishing track region B. In detail, the
polishing pad 100 is suitable to be used in a polishing process for
polishing an object. When the polishing pad 100 is used to polish
an object, the object is placed in the polishing track region A. In
addition, the polishing pad 100 has a rotation center C, and the
rotation center C of the polishing pad 100 is utilized as a center
for counterclockwise rotation or clockwise rotation. The rotation
center C is the central point of the polishing pod 100, for
example.
[0024] In another aspect, in this embodiment, the polishing pad 100
includes a polishing layer 110, a plurality of grooves G, an
adhesive layer 120, and a heat storage material 130. In order to
clearly label the polishing track region A and the non-polishing
track region B, the grooves G are omitted in FIG. 1.
[0025] The polishing layer 110 has a polishing surface PS and a
back surface BS opposite to the polishing surface PS. In this
embodiment, when the polishing pad 100 is used to polishing an
object, the object contacts the polishing surface PS of the
polishing layer 110. Moreover, the polishing pad 100 is made from a
polymer, such as a polyester, a polyether, a polyurethane, a
polycarbonate, a polyacrylate, a polybutadiene, or other polymer
base material synthesized from suitable thermosetting resins or
thermoplastic resins, for example. However, the invention is not
limited thereto.
[0026] The grooves G are disposed in the polishing surface PS of
the polishing layer 110. In this embodiment, the grooves G have a
groove depth D from the bottom Gb thereof to the polishing surface
PS. In addition, although the polishing pad 100 has many grooves G
along the radius direction, as shown in FIG. 2, but the invention
is not limited thereto. As long as the polish pad 100 includes at
least one groove G, this is within the scope of the invention.
Moreover, the distribution profile of the grooves G may be
concentric circles, eccentric circles, ellipses, polygonal rings,
spiral rings, irregular rings, parallel linear shapes, radial
shapes, radiation arcs, spiral shapes, dots, or XY grids, for
example.
[0027] The adhesive layer 120 is disposed on the back surface BS of
the polishing layer 110. Namely, in this embodiment, the adhesive
layer 120 is attached on the back surface BS of the polishing layer
110. Furthermore, the adhesive layer 120 includes, but not limited
to, a carrier-free adhesive or a double-sided adhesive. The
material of the adhesive layer 120 is an acrylic-based adhesive, a
silicone-based adhesive, a rubber-based adhesive, an epoxy-based
adhesive, or a urethane-based adhesive, for example. However, the
invention is not limited thereto.
[0028] The heat storage material 130 is disposed in a heat storage
region H. In this embodiment, the heat storage region H is disposed
above the adhesive layer 120 and does not contact the bottom Gb of
the grooves G. As described above, the grooves G have a groove
depth D. The distance between the top edge Ht of the heat storage
region H and the polishing surface PS is larger than D.
Additionally, the distance between the top edge Ht and the
polishing surface PS may be optionally smaller or equal to 1.5 D,
so that the region where the heat storage material 130 is disposed
is larger to effectively decrease the temperature of the polishing
pad 100. From another point of view, the top edge Ht of the heat
storage region H does not contact or overlap with the bottom Gb of
the grooves G.
[0029] In this embodiment, the heat storage material 130 is
dispersed in the material of the polishing layer 110. Namely, the
heat storage material 130 is distributed in a portion of the
polishing layer 110. The method of forming the polishing layer 110
includes a step of mixing the heat storage material 130 and the
material of the polishing layer 110. Specifically, the heat storage
material 130 is distributed in the polishing layer 110 below a
position having a distance larger than D from the polishing surface
PS. A part of the polishing layer 110 that includes the heat
storage material 130 and a part of the polishing layer 110 that
does not include the heat storage material 130 are combined and
formed by the perfusion method, for example. In another point of
view, the heat storage region H is disposed in a portion of the
polishing layer 110.
[0030] A cover layer 140 may be optionally formed to cover the heat
storage material 130. In detail, the material of the cover layer
140 does not chemically react with the material of the polishing
layer 110 or the heat storage material 130. More specifically, the
material of the cover layer 140 may be an organic material
comprising a phenolic resin, a urea-formaldehyde resin, polystyrene
or a polyamide, for example. However, the invention is not limiter
thereto.
[0031] Additionally, the heat storage material 130 includes an
inorganic heat storage material, an organic heat storage material,
or a combination thereof. In detail, the inorganic includes, but is
not limited to, a hydrate of a salt, such as
CH.sub.3COONa.3H.sub.2O or CaCl.sub.2.6H.sub.2O. The organic heat
storage material includes, but is not limited to, a polyol, a fatty
alcohol, a fatty acid, or an alkane. The polyol may be
trimethylolpropane (C.sub.6H.sub.14O.sub.3, TMP), for example. The
fatty alcohol may be tetradecanol (C.sub.14H.sub.30O), for example.
The fatty acid may be lauric acid (CH.sub.3(CH.sub.2).sub.10COOH),
capric acid (CH.sub.3(CH.sub.2).sub.8COOH), for example. The alkane
may be n-eicosane (C.sub.20H.sub.42), n-heneicosane
(C.sub.21H.sub.44), n-docosane (C.sub.22H.sub.46), n-tricosane
(C.sub.23H.sub.48), or n-tetracosane (C.sub.24H.sub.50).
[0032] It is worth mentioning that the heat storage material 130
undergoes an endothermic reaction at a certain temperature or in a
certain temperature range to absorb heat from surroundings, and
thus the purpose of lowering the surrounding temperature is
achieved. In this embodiment, the heat storage material 130
undergoes an endothermic reaction at a certain temperature within a
range from the lowest temperature Tmin to the highest temperature
Tmax of the polishing pad 100 during a polishing process. Namely,
the heat storage material 130 inevitably undergoes an endothermic
reaction during the polishing process. Since the polishing pad 100
includes the heat storage material 130, the heat generated by
mechanical friction may be absorbed by the heat storage material
130 to reduce the temperature increase degree of the polishing pad
100 during the polishing process, and thereby the purpose of
effectively reducing the temperature of the polishing pad 100 is
achieved. FIG. 3 is a diagram showing the relationship between time
of polishing an object and polishing pad temperature of a polishing
pad of the invention and a conventional polishing pad. From FIG. 3,
it may be known that the polishing pad of the invention has a lower
temperature during the period of the polishing process, comparing
with a conventional polishing pad.
[0033] In detail, the lowest temperature Tmin may be the
temperature of water at room temperature (about 25.degree.
C.-35.degree. C.) or the temperature of cooled water (such as below
10.degree. C.). This is because the minimum temperature Tmin is the
surface temperature of the polishing pad 100 at the time when the
cleaning process is performed on the polishing pad 100 in the
machine idle state or the cleaning process is performed before the
next object entering the polishing pad 100. The cleaning process
mentioned above may use water at room temperature or water after
cooling. The highest temperature Tmax of the polishing pad varies
depending on the polishing process. For example, the highest
temperature of the polishing pad is about 65.degree. C. in an oxide
polishing process; the highest temperature of the polishing pad is
about 55.degree. C. in a copper polishing process; and the highest
temperature of the polishing pad is about 80.degree. C. in a
tungsten polishing process. Besides, the certain temperature may be
a fixed temperature or a temperature range.
[0034] Further, the physical state or the molecular structure of
the heat storage material 130 may be changed after the endothermic
reaction. In one embodiment, the molecular arrangement of the heat
storage material 130 after the endothermic reaction is looser than
the molecular arrangement of the heat storage material 130 before
the endothermic reaction. In other words, the molecular arrangement
of the heat storage material 130 before the endothermic reaction is
closer than the molecular arrangement of the heat storage material
130 after the endothermic reaction. In an alternative embodiment,
the heat storage material 130 undergoes a phase transition from a
first solid state to a second solid state during the endothermic
reaction, and the molecular arrangements of the first solid state
and the second solid state are different. For example, the crystal
arrangements of the first solid state and the second solid state
are different.
[0035] It is worth noting that the polishing pad 100 includes the
heat storage material 130, as described above, so that the
temperature of the polishing pad 100 may be decreased during the
period of a polishing process. Thereby, since the heat storage
region H where the heat storage material 130 is disposed is above
the adhesive layer 120, the adhesive layer 120 disposed under the
heat storage region H does not have the problem of deterioration,
deformation or adhesion degradation due to high temperature during
the polishing process, so as to maintain the stability of the
polishing process.
[0036] In this embodiment, the heat storage region H where the heat
storage material 130 is disposed is not in contact with the bottom
Gb of the grooves G, so that the contact between an object and the
heat storage material 130 may be avoided, thereby preventing
scratches and negative impact on the polishing quality when the
polishing process is performed on the object using the polishing
pad 100.
[0037] In the embodiment shown in FIG. 2, although the heat storage
region H where the heat storage material 130 is disposed does not
contact with the bottom Gb of the grooves G, but the invention is
not limited thereto. The option of the distance between the top
edge Ht of the heat storage region H and the polishing surface PS
may depend on the abrasion degree of the polishing layer 110 when
the polishing pad 100 is used. In other embodiments, the distance
from the top edge Ht of the heat storage region H to the polishing
surface PS may be D/2, 2D/3, 3D/4, 4D/5, or D to avoid the contact
between an object and the heat storage material 130, thereby
preventing scratches and negative impact on the polishing quality.
Moreover, in some other embodiments, the object may not be easily
scratched, or the heat storage material 130 that does not easily
scratch the object is selected. Then, it may choose to distribute
the heat storage material 130 over the entire polishing layer 110
of the polishing pad 100.
[0038] Moreover, in this embodiment, the polishing pad 100 may
include the cover layer 140 covering the heat storage material 130,
but the invention is not limited thereto. In some other
embodiments, in the case where the material of the polishing layer
110 mixed with the heat storage material 130 may seal the heat
storage material 130 therein, the polishing pad 100 may not include
the cover layer 140.
[0039] In the first embodiment, the polishing pad 100 includes the
heat storage material 130 disposed within the polishing track
region A and the non-polishing track region B, but the invention is
not limited thereto. Comparing with the non-polishing track region
B, the polishing track region A usually has a higher temperature.
Therefore, the heat storage material 130 may be disposed within the
polishing track region A only to achieve the purpose of more evenly
lowering the temperature of the polishing pad 100 during the
polishing process. In other embodiments, the polishing pad may
include different heat storage material respectively disposed
within the polishing track region A and the non-polishing track
region B. The details will be described below with reference to
FIG. 4.
[0040] FIG. 4 is a cross-sectional diagram illustrating a polishing
pad along a radius direction according to a second embodiment of
the invention. Reference may be made to FIG. 1 for a top view
diagram of a polishing pad 200 of FIG. 4. The cross-sectional
position of FIG. 4 may refer to the position of the line I-I' in
FIG. 1. Please refer to FIGS. 2 and 4 at the same time, the
polishing pad 200 in FIG. 4 is similar to the polishing pad 100 in
FIG. 2. Therefore, the same or similar elements are represented by
the same or similar numerals, and the related descriptions thereof
may refer to the descriptions above and are thus omitted here. In
addition, a polishing layer 210 and an adhesive layer 220 are the
same or similar to the corresponding ones in the first embodiment,
and the related descriptions are thus omitted here. The difference
between the two embodiments will be described below.
[0041] Please refer to FIG. 4. In this embodiment, the polishing
pad 200 includes a first heat storage material 230a and a second
heat storage material 230b, and both of the first heat storage
material 230a and the second heat storage material 230b are
disposed in the heat storage region H. From another point of view,
the first heat storage material 230a is disposed within the
polishing track region A, and the second heat storage material 230b
is disposed within the non-polishing track region B, in this
embodiment. Namely, different heat storage materials are disposed
within the different regions of the polishing pad 200 in this
embodiment.
[0042] Further, both of the first heat storage material 230a and
the second heat storage material 230b are dispersed in the material
of the polishing layer 210. That is, the first heat storage
material 230a and the second heat storage material 230b are
distributed in the polishing layer 210. The method of forming the
polishing layer 210 includes respectively forming the structural
portions corresponding to the polishing track region A and the
non-polishing track region B. The method of forming the structural
portion corresponding to the polishing track region A includes a
step of mixing the first heat storage material 230a and the
material of the polishing layer 210, for example. The method of
forming the structural portion corresponding to the non-polishing
track region B includes a step of mixing the second heat storage
material 230b and the material of the polishing layer 210, for
example. The first heat storage material 230a and the second heat
storage material 230b are distributed in the polishing layer 210
below a position with a distance greater than D from the polishing
surface PS. In an embodiment, the method of forming the polishing
layer 210 may include bonding to combine the two structural
portions after respectively forming the structural portions
corresponding to the polishing track region A and the non-polishing
track region B. The two structural portions are joined by an
adhesive or thermal fusion, for example. In another embodiment, the
method of forming the polishing layer 210 includes forming the
structural portion corresponding to the polishing track region A by
perfusion method and then forming the structural portion
corresponding to the polishing track region B by perfusion method.
In this case, the structural portion corresponding to the
non-polishing track region B and the formed structural portion
corresponding to the polishing track region A are connected and
integrated. A part of the polishing layer 210 that includes the
first heat storage material 230a and the second heat storage
material 230b and a part of the polishing layer 210 that does not
include the first heat storage material 230a and the second heat
storage material 230b are combined and formed by the perfusion
method, for example. From another point of view, the heat storage
region H is disposed in a portion of the polishing layer 210.
[0043] Moreover, a cover layer 240 may be optionally formed to
cover the first heat storage material 230a and the second heat
storage material 230b. The property and material of the cover layer
240 are the same as those of the cover layer 140 and thus are
omitted here.
[0044] Additionally, the first heat storage material 230a and the
second heat storage material 230b respectively include an inorganic
heat storage material, an organic heat storage material, or a
combination thereof. In detail, the inorganic includes, but is not
limited to, a hydrate of a salt, such as CH.sub.3COONa.3H.sub.2O or
CaCl.sub.2.6H.sub.2O. The organic heat storage material includes,
but is not limited to, a polyol, a fatty alcohol, a fatty acid, or
an alkane. The polyol may be trimethylolpropane (TMP,
C.sub.6H.sub.14O.sub.3), for example. The fatty alcohol may be
tetradecanol (C.sub.14H.sub.30O), for example. The fatty acid may
be lauric acid (CH.sub.3(CH.sub.2).sub.10COOH), capric acid
(CH.sub.3(CH.sub.2).sub.8COOH), for example. The alkane may be
n-eicosane (C.sub.20H.sub.42), n-heneicosane (C.sub.21H.sub.44),
n-docosane (C.sub.22H.sub.46), n-tricosane (C.sub.23H.sub.48), or
n-tetracosane (C.sub.24H.sub.50).
[0045] It is worth mentioning that the first heat storage material
230a and the second heat storage material 230b undergo an
endothermic reaction at different certain temperatures or in
different temperature ranges to absorb heat from surroundings, and
thus the purpose of lowering the surrounding temperature is
achieved. In this embodiment, the first heat storage material 230a
and the second heat storage material 230b undergo an endothermic
reaction at different temperatures within a range from the lowest
temperature Tmin to the highest temperature Tmax of the polishing
pad 200 during a polishing process. Namely, both of the first heat
storage material 230a and the second heat storage material 230b
undergo an endothermic reaction during the polishing process. As
shown in FIG. 5, the first heat storage material 230a and the
second heat storage material 230b undergo an endothermic reaction
at different temperatures between the lowest temperature Tmin and
the highest temperature Tmax. Since the polishing pad 200 includes
the first heat storage material 230a and the second heat storage
material 230b, the heat generated by mechanical friction may be
absorbed by the first heat storage material 230a and the second
heat storage material 230b to reduce the temperature increase
degree of the polishing pad 200 during the polishing process, and
thereby the purpose of effectively reducing the temperature of the
polishing pad 200 is achieved. Besides, the certain temperature may
be a fixed temperature or a temperature range.
[0046] Furthermore, the inventor found that different areas of a
polishing pad may have different temperatures when the polishing
pad is used to perform a polishing process on an object. That is,
the polishing pad has a temperature gradient or a non-uniform
temperature profile. In view of this, the first heat storage
material 230a and the second heat storage material 230b which
undergo an endothermic reaction at different certain temperatures
are respectively disposed within the polishing track region A and
the non-polishing track region B of the polishing pad 200, and
thereby, the temperature decrease degree of the polishing pad 200
in the polishing process may be more uniform. In one embodiment,
the temperature of the polishing track region A is higher than the
temperature of the non-polishing track region B when the polishing
pad 200 is used in a polishing process. Thereby, the temperature
decrease degree of the polishing pad 200 may be more uniform
through the polishing pad 200 including the first heat storage
material 230a and the second heat storage material 230b having
property shown in FIG. 5, wherein a endothermic reaction
temperature of the first heat storage material 230a is lower than a
endothermic reaction temperature of the second heat storage
material 230b, or a heat absorption (i.e. an area of the
endothermic peak of the first heat storage material 230a shown in
FIG. 5) of the first heat storage material 230a is larger than a
heat absorption (i.e. an area of the endothermic peak of the second
heat storage material 230b shown in FIG. 5) of the second heat
storage material 230b.
[0047] Moreover, in this embodiment, the physical state or the
molecular structure of the first heat storage material 230a may be
changed and the physical state or the molecular structure of the
second heat storage material 230b may be changed after the
endothermic reaction. This property is the same as the property of
the heat storage material 130 in the first embodiment. Since the
related description has been described in detail in the first
embodiment, and thus is omitted here.
[0048] It is worth noting that, in this embodiment, the polishing
pad 200 includes the first heat storage material 230a and the
second heat storage material 230b, so that the temperature of the
polishing pad 200 may be evenly decreased in the polishing process.
Thereby, since the heat storage region H where the first heat
storage material 230a and the second heat storage material 230b are
disposed is above the adhesive layer 220, the adhesive layer 220
disposed under the heat storage region H does not have the problem
of deterioration, deformation or adhesion degradation due to high
temperature during the polishing process, so as to maintain the
stability of the polishing process.
[0049] In this embodiment, the heat storage region H where the
first heat storage material 230a and the second heat storage
material 230b are disposed is not in contact with the bottom Gb of
the grooves G, so that the contact between an object and the first
heat storage material 230a and the second heat storage material
230b may be avoided, thereby preventing scratches and negative
impact on the polishing quality when the polishing process is
performed on the object using the polishing pad 200.
[0050] In the embodiment shown in FIG. 4, although the heat storage
region H where the first heat storage material 230a and the second
heat storage material 230b are disposed does not contact with the
bottom Gb of the grooves G, but the invention is not limited
thereto. The option of the distance between the top edge Ht of the
heat storage region H and the polishing surface PS may depend on
the abrasion degree of the polishing layer 210 when the polishing
pad 200 is used. In other embodiments, the distance from the top
edge Ht of the heat storage region H to the polishing surface PS
may be D/2, 2D/3, 3D/4, 4D/5, or D to avoid the contact between an
object and the first heat storage material 230a and the second heat
storage material 230b, thereby preventing scratches and negative
impact on the polishing quality. Moreover, in some other
embodiments, the object may not be easily scratched, or the first
heat storage material 230a and the second heat storage material
230b that does not easily scratch the object are selected. Then, it
may choose to distribute the first heat storage material 230a and
the second heat storage material 230b over the entire polishing
layer 210 of the polishing pad 200.
[0051] Moreover, in this embodiment, the polishing pad 200 may
include the cover layer 240 covering the first heat storage
material 230a and a second heat storage material 230b, but the
invention is not limited thereto. In some other embodiments, in the
case where the material of the polishing layer 210 mixed with the
first heat storage material 230a and a second heat storage material
230b may seal the first heat storage material 230a and a second
heat storage material 230b therein, the polishing pad 200 may not
include the cover layer 240.
[0052] In the first embodiment, the heat storage material 130 is
dispersed in the material of the polishing layer 110 in the
corresponding heat storage region H, but the invention is not
limited thereto. In other embodiments, the heat storage material
may also be in the form of an interface layer formed in the heat
storage region H in the polishing pad. The details will be
described below with reference to FIG. 6.
[0053] FIG. 6 is a cross-sectional diagram along illustrating a
polishing pad along a radius direction according to a third
embodiment of the invention. Reference may be made to FIG. 1 for a
top view diagram of a polishing pad 300 of FIG. 6. The
cross-sectional position of FIG. 6 may refer to the position of the
line I-I' in FIG. 1. Please refer to FIGS. 2 and 6 at the same
time, the polishing pad 300 in FIG. 6 is similar to the polishing
pad 100 in FIG. 2. Therefore, the same or similar elements are
represented by the same or similar numerals, and the related
descriptions thereof may refer to the descriptions above and are
thus omitted here. In addition, a polishing layer 310 and an
adhesive layer 320 are the same or similar to the corresponding
ones in the first embodiment, and the related descriptions are thus
omitted here. The difference between the two embodiments will be
described below.
[0054] Please refer to FIG. 6. In this embodiment, a heat storage
material 330 is disposed in the heat storage region H. In detail,
the heat storage material 330 in the heat storage region H forms an
interface layer 350. Namely, the heat storage region H covers the
entire interface layer 350 formed by the heat storage material 330.
In this embodiment, the interface layer 350 is disposed above the
adhesive layer 320. In this embodiment, the interface layer 350 is
disposed between the adhesive layer 320 and the polishing layer
310. Besides, as described above, since the heat storage region H
does not contact with the bottom Gb of the grooves G, the interface
layer 350 which is disposed in the heat storage region H also does
not contact with the bottom Gb of the grooves G.
[0055] In one embodiment, the interface layer 350 and the polishing
layer 310 are made by using the same mold, for example. In detail,
the method of forming the interface layer 350 and the polishing
layer 310 includes using perfusion method to inject the heat
storage material 330 into a mold to form the interface layer 350,
and then using perfusion method to inject the material of the
polishing layer 310 into the mold having the formed interface layer
350 therein. However, the invention is not limited to the above
method of forming the interface layer 350 and the polishing layer
310. The invention also may choose another method to complete the
structure of the interface layer 350 and the polishing layer
310.
[0056] Moreover, a cover layer 340 may be optionally formed to
cover the heat storage material 330. The property and material of
the cover layer 340 are the same as those of the cover layer 140
and thus are omitted here.
[0057] Additionally, the heat storage material 330 includes an
inorganic heat storage material, an organic heat storage material,
or a combination thereof. In detail, the inorganic includes, but is
not limited to, a hydrate of a salt, such as
CH.sub.3COONa.3H.sub.2O or CaCl.sub.2.6H.sub.2O. The organic heat
storage material includes, but is not limited to, a polyol, a fatty
alcohol, a fatty acid, or an alkane. The polyol may be
trimethylolpropane (TMP, C.sub.6H.sub.14O.sub.3), for example. The
fatty alcohol may be tetradecanol (C.sub.14H.sub.30O), for example.
The fatty acid may be lauric acid (CH.sub.3(CH.sub.2).sub.10COOH),
capric acid (CH.sub.3(CH.sub.2).sub.8COOH), for example. The alkane
may be n-eicosane (C.sub.20H.sub.42), n-heneicosane
(C.sub.21H.sub.44), n-docosane (C.sub.22H.sub.46), n-tricosane
(C.sub.23H.sub.48), or n-tetracosane (C.sub.24H.sub.50).
[0058] It is worth mentioning that the heat storage material 330
undergoes an endothermic reaction at a certain temperature or in a
certain temperature range to absorb heat from surroundings, and
thus the purpose of lowering the surrounding temperature is
achieved. In this embodiment, the heat storage material 330
undergoes an endothermic reaction at a certain temperature within a
range from the lowest temperature Tmin to the highest temperature
Tmax of the polishing pad 300 during a polishing process. Namely,
the heat storage material 330 inevitably undergoes an endothermic
reaction during the polishing process. Since the polishing pad 300
includes the heat storage material 330, the heat generated by
mechanical friction may be absorbed by the heat storage material
330 to reduce the temperature increase degree of the polishing pad
300 during the polishing process, and thereby the purpose of
effectively reducing the temperature of the polishing pad 300 is
achieved, as shown in FIG. 3. Besides, the certain temperature may
be a fixed temperature or a temperature range.
[0059] Further, the physical state or the molecular structure of
the heat storage material 330 may be changed after the endothermic
reaction. This property is the same as the property of the heat
storage material 130 in the first embodiment. Since the related
description has been described in detail, and thus is omitted
here.
[0060] It is worth noting that, as described above, in this
embodiment, the polishing pad 300 includes the heat storage
material 330, so that the temperature of the polishing pad 300 may
be decreased in the polishing process. Thereby, since the heat
storage region H where the heat storage material 330 is disposed is
above the adhesive layer 320, the adhesive layer 320 disposed under
the heat storage region H does not have the problem of
deterioration, deformation or adhesion decay due to high
temperature during the polishing process, so as to maintain the
stability of the polishing process.
[0061] Moreover, a cover layer 340 may be optionally formed to
cover the heat storage material 330, but the invention is not
limited thereto. In some other embodiments, the polishing pad 300
may not include the cover layer 340 that cover the heat storage
material 330 in a case where the heat storage material 330 does not
flow easily to contaminate the polishing layer 310 or the adhesive
layer 320 after the endothermic reaction occurs.
[0062] Moreover, based on the second and third embodiments, it may
be known that the polishing pad 300 of the third embodiment may be
designed by using the same concept of the polishing pad 200 of the
second embodiment. The heat storage material 330 originally
disposed in both of the polishing track region A and the
non-polishing track region B may be replaced by different heat
storage materials respectively disposed in the polishing track
region A and the non-polishing track region B to achieve the
purpose of more evenly decrease the temperature of the polishing
pad in the polishing process. Incidentally, the polishing track
region A usually has a higher temperature than the temperature of
the non-polishing track region B. Therefore, the heat storage
material 330 may dispose within the polishing track region A only
to achieve the purpose of more evenly lowering the temperature of
the polishing pad 300 during the polishing process.
[0063] FIG. 7 is a cross-sectional diagram illustrating a polishing
pad along a radius direction according to a fourth embodiment of
the invention. Reference may be made to FIG. 1 for a top view
diagram of a polishing pad 400 of FIG. 7. The cross-sectional
position of FIG. 7 may refer to the position of the line I-I' in
FIG. 1. Please refer to FIGS. 2 and 7 at the same time, the
polishing pad 400 in FIG. 7 is similar to the polishing pad 100 in
FIG. 2, the difference between the two embodiments is the structure
of polishing pad. Therefore, the same or similar elements are
represented by the same or similar numerals, and the related
descriptions thereof may refer to the descriptions above and are
thus omitted here. In addition, a polishing layer 410 is the same
or similar to the corresponding one in the first embodiment, and
the related descriptions are thus omitted here. The difference
between the two embodiments will be described below.
[0064] Please refer to FIG. 7. The polishing pad 400 includes a
base layer 460 under the polishing layer 410. In detail, in this
embodiment, the base layer 460 is suitable for underlaying the
polishing layer 410 in the polishing pad 400. The material of the
base layer 460 may be a polyurethane, polybutadiene, polyethylene,
polypropylene, a copolymer of polyethylene with ethylene vinyl
acetate, or a copolymer of polypropylene with ethylene vinyl
acetate, for example, but the invention is not limited thereto.
[0065] The polishing pad 400 includes a first adhesive layer 420a
between the polishing layer 410 and the base layer 460. In detail,
in this embodiment, the first adhesive layer 420a is used for
adhering the polishing layer 410 to the base layer 460. In
addition, the first adhesive layer 420a includes, but is limited
to, carrier-free adhesive, double-sided adhesive, hot-melt
adhesive, or moisture-hardening adhesive. The material of the first
adhesive layer 420a is an acrylic-based adhesive, a silicone-based
adhesive, a rubber-based adhesive, an epoxy-based adhesive or a
polyurethane-based adhesive, for example. However, the invention is
not limited thereto.
[0066] The polishing pad 400 includes a second adhesive layer 420b
under the base layer 460. In detail, in this embodiment, the second
adhesive layer 420b is adhered to the back surface of the base
layer 460 away from the first adhesive layer 420a. That is, the
base layer 460 is disposed between the first adhesive layer 420a
and the second adhesive layer 420b. In addition, the second
adhesive layer 420b includes, but is limited to, a carrier-free
adhesive or a double-sided adhesive. The material of the second
adhesive layer 420b is an acrylic-based adhesive, a silicone-based
adhesive, a rubber-based adhesive, an epoxy-based adhesive or a
polyurethane-based adhesive, for example. However, the invention is
not limited thereto.
[0067] The heat storage material 430 is disposed in a heat storage
region K. In this embodiment, the heat storage region K is disposed
between the first adhesive layer 420a and the second adhesive layer
420b. In detail, in this embodiment, the heat storage region K
covers the entire base layer 460. That is, the base layer 460 has a
thickness T, and a distance between the top edge Kt and the bottom
edge Kb of the heat storage region K is equal to T.
[0068] Moreover, in this embodiment, the heat storage material 430
is dispersed in the material of the base layer 460. That is, the
heat storage material 430 is distributed in the base layer 460. The
method of forming the base layer 460 includes a step of mixing the
heat storage material 430 and the material of the base layer
460.
[0069] Moreover, a cover layer 440 may be optionally formed to
cover the heat storage material 430. The property and material of
the cover layer 440 are the same as those of the cover layer 140
and thus are omitted here.
[0070] Additionally, the heat storage material 430 includes an
inorganic heat storage material, an organic heat storage material,
or a combination thereof. In detail, the inorganic includes, but is
not limited to, a hydrate of a salt, such as
CH.sub.3COONa.3H.sub.2O or CaCl.sub.2.6H.sub.2O. The organic heat
storage material includes, but is not limited to, a polyol, a fatty
alcohol, a fatty acid, or an alkane. The polyol may be
trimethylolpropane (TMP, C.sub.6H.sub.14O.sub.3), for example. The
fatty alcohol may be tetradecanol (C.sub.14H.sub.30O), for example.
The fatty acid may be lauric acid (CH.sub.3(CH.sub.2).sub.10COOH),
capric acid (CH.sub.3(CH.sub.2).sub.8COOH), for example. The alkane
may be n-eicosane (C.sub.20H.sub.42), n-heneicosane
(C.sub.21H.sub.44), n-docosane (C.sub.22H.sub.46), n-tricosane
(C.sub.23H.sub.48), or n-tetracosane (C.sub.24H.sub.50).
[0071] It is worth mentioning that the heat storage material 430
undergoes an endothermic reaction at a certain temperature or in a
certain temperature range to absorb heat from surroundings, and
thus the purpose of lowering the surrounding temperature is
achieved. In this embodiment, the heat storage material 430
undergoes an endothermic reaction at a certain temperature within a
range from the lowest temperature Tmin to the highest temperature
Tmax of the polishing pad 400 during a polishing process. Namely,
the heat storage material 430 inevitably undergoes an endothermic
reaction during the polishing process. Since the polishing pad 400
includes the heat storage material 430, the heat generated by
mechanical friction may be absorbed by the heat storage material
430 to reduce the temperature increase degree of the polishing pad
400 during the polishing process, and thereby the purpose of
effectively reducing the temperature of the polishing pad 400 is
achieved, as shown in FIG. 3. Besides, the certain temperature may
be a fixed temperature or a temperature range.
[0072] Further, the physical state or the molecular structure of
the heat storage material 430 may be changed after the endothermic
reaction. This property is the same as the property of the heat
storage material 130 in the first embodiment. Since the related
description has been described in detail, and thus is omitted
here.
[0073] It is worth noting that, as described above, in this
embodiment, the polishing pad 400 includes the heat storage
material 430, so that the temperature of the polishing pad 400 may
be decreased in the polishing process. Thereby, since the heat
dispose region K where the heat storage material 430 is disposed is
between the first adhesive layer 420a and the second adhesive layer
420b, the first adhesive layer 420a and the second adhesive layer
420b disposed on two sides of the heat storage region K do not have
the problem of deterioration, deformation or adhesion decay due to
high temperature during the polishing process, so as to maintain
the stability of the polishing process.
[0074] Furthermore, the polishing pad 400 includes the cover layer
440 covering the heat storage material 430, but the invention is
not limited thereto. In other embodiments, in the case where the
material of the base layer 460 mixed with the heat storage material
430 may seal the heat storage material 430 therein, the polishing
pad 400 may not include the cover layer 440.
[0075] From the first to fourth embodiments, it may be known that
the polishing pad 400 of the fourth embodiment may be designed in
the same concept as the polishing pads 100-300 of the first to
third embodiments. A heat storage region where a heat storage
material is disposed is formed above the first adhesive layer
420a.
[0076] From the second and fourth embodiments, it may be known that
the polishing pad 400 of the fourth embodiment may adopt the same
conceptual design as the polishing pad 200 of the second
embodiment. The heat storage material 430 originally disposed in
both of the polishing track region A and the non-polishing track
region B may be replaced by different heat storage materials
respectively disposed in the polishing track region A and the
non-polishing track region B to achieve the purpose of more evenly
decrease the temperature of the polishing pad 400 in the polishing
process. Incidentally, the temperature of the polishing track
region A is usually higher than the temperature of the
non-polishing track region B. Therefore, the heat storage material
430 may dispose within the polishing track region A only to achieve
the purpose of more evenly lowering the temperature of the
polishing pad 400 during the polishing process.
[0077] In the fourth embodiment above, the heat storage region K
covers the entire base layer 460, but the invention is not limited
thereto. The inventor found that each adhesive layer has a
different adhesive strength depending on the choice of materials
for each adhesive layer. The adhesive layers also have relatively
different resistance to the heat generated during the polishing
process. Therefore, the heat storage region K does not necessarily
need to cover the entire base layer 460. In view of this, in other
embodiments, the heat storage area K may also be located in part of
the base layer. The details will be described below with reference
to FIGS. 8 and 9.
[0078] FIG. 8 is a cross-sectional diagram illustrating a polishing
pad along a radius direction according to a fifth embodiment of the
invention. Reference may be made to FIG. 1 for a top view diagram
of a polishing pad 500 of FIG. 8. The cross-sectional position of
FIG. 8 may refer to the position of the line I-I' in FIG. 1. Please
refer to FIGS. 7 and 8 at the same time, the polishing pad 500 in
FIG. 8 is similar to the polishing pad 400 in FIG. 7. Therefore,
the same or similar elements are represented by the same or similar
numerals, and the related descriptions thereof may refer to the
descriptions above and are thus omitted here. In addition, a
polishing layer 510, a first adhesive layer 520a, a second adhesive
layer 520b, a heat storage material 530, and a cover layer 540 are
the same or similar to the corresponding ones in the fourth
embodiment, and the related descriptions are thus omitted here. The
difference between the two embodiments will be described below.
[0079] Please refer to FIG. 8. In this embodiment, a heat storage
region L where the heat storage material 530 is disposed is located
between the first adhesive layer 520a and the second adhesive layer
520b. In detail, the heat storage region L is located in a portion
of the base layer 560 adjacent to the first adhesive layer 520a.
That is, in this embodiment, the heat storage region L is located
below the first adhesive layer 520a. From another point of view, in
this embodiment, the base layer 560 has a thickness T, and a
distance between the top edge Lt and the bottom edge Lb of the heat
storage area L is T/3 to less than T.
[0080] Additionally, in this embodiment, the method of forming the
base layer 560 includes a step of mixing the heat storage material
530 and the material of the base layer 560. A part of the base
layer 560 that includes the heat storage material 530 and a part of
the base layer 560 that does not include the heat storage material
530 are combined and formed by the perfusion method, for
example.
[0081] It should be noted that, in this embodiment, since the heat
storage material 530 is bound to undergo an endothermic reaction
during the polishing process, the polishing pad 500 includes the
heat storage material 530, such that heat generated by mechanical
friction may be absorbed by the heat storage material 530 in the
polishing process. Whereby the degree of temperature increase
caused by the mechanical friction of the polishing pad 500 is
reduced to achieve the purpose of effectively lowering the
temperature of the polishing pad 500, as shown in FIG. 3. As a
result, the heat storage region L where the heat storage material
530 is disposed is located in a portion of the base layer 560
adjacent to the first adhesive layer 520a, so that the first
adhesive layer 520a disposed above the heat storage area L does not
have a problem of deterioration, deformation or adhesion decay due
to high temperature during the polishing process so as to maintain
the stability of the polishing process.
[0082] Moreover, in this embodiment, the polishing pad 500 includes
the cover layer 540 covering the heat storage material 530, but the
invention is not limited thereto. In other embodiments, in the case
where the material of the base layer 560 mixed with the heat
storage material 530 may seal the heat storage material 530
therein, the polishing pad 500 may not include the cover layer
540.
[0083] From the first to third, and fifth embodiments, it may be
known that the polishing pad 500 of the fifth embodiment may be
designed in the same concept as the polishing pads 100.about.300 of
the first to third embodiments. A heat storage region where a heat
storage material is disposed is formed above the first adhesive
layer 520a.
[0084] From the second and fifth embodiments, it may be known that
the polishing pad 500 of the fifth embodiment may also adopt the
same conceptual design as the polishing pad 200 of the second
embodiment. The heat storage material 530 originally disposed in
both of the polishing track region A and the non-polishing track
region B may be replaced by different heat storage materials
respectively disposed in the polishing track region A and the
non-polishing track region B to achieve the purpose of more evenly
decrease the temperature of the polishing pad 500 in the polishing
process. Incidentally, the temperature of the polishing track
region A is usually higher than the temperature of the
non-polishing track region B. Therefore, the heat storage material
530 may dispose within the polishing track region A only to achieve
the purpose of more evenly lowering the temperature of the
polishing pad 500 during the polishing process.
[0085] From the third and fifth embodiments, it may be known that
the polishing pad 500 of the fifth embodiment may also adopt the
same conceptual design as the polishing pad 300 of the third
embodiment. The heat storage material 530 may be used to form an
interface layer between the base layer and the first adhesive layer
in the heat storage area L, instead of being dispersed in the
material of the base layer 560 within the corresponding heat
storage area L in the fifth embodiment, to achieve the same
invention effect. Namely, the temperature of the polishing pad 500
may be reduced during the polishing process.
[0086] FIG. 9 is a cross-sectional diagram illustrating a polishing
pad along a radius direction according to a sixth embodiment of the
invention. Reference may be made to FIG. 1 for a top view diagram
of a polishing pad 600 of FIG. 9. The cross-sectional position of
FIG. 9 may refer to the position of the line I-I' in FIG. 1. Please
refer to FIGS. 8 and 9 at the same time, the polishing pad 600 in
FIG. 9 is similar to the polishing pad 500 in FIG. 8. Therefore,
the same or similar elements are represented by the same or similar
numerals, and the related descriptions thereof may refer to the
descriptions above and are thus omitted here. In addition, a
polishing layer 610, a first adhesive layer 620a, a second adhesive
layer 620b, a heat storage material 630, and a cover layer 640 are
the same or similar to the corresponding ones in the fifth
embodiment, and the related descriptions are thus omitted here. The
difference between the two embodiments will be described below.
[0087] Please refer to FIG. 9. In this embodiment, a heat storage
region M where the heat storage material 630 is disposed is located
between the first adhesive layer 620a and the second adhesive layer
620b. In detail, the heat storage region M is located in a portion
of the base layer 660 adjacent to the second adhesive layer 620b.
That is, in this embodiment, the heat storage region M is located
above the second adhesive layer 620b. From another point of view,
in this embodiment, the base layer 660 has a thickness T, and a
distance between the top edge Mt and the bottom edge Mb of the heat
storage area M is T/3 to less than T.
[0088] Additionally, in this embodiment, the method of forming the
base layer 660 includes a step of mixing the heat storage material
630 and the material of the base layer 660. A part of the base
layer 660 that includes the heat storage material 630 and a part of
the base layer 660 that does not include the heat storage material
630 are combined and formed by the perfusion method, for
example.
[0089] It should be noted that, in this embodiment, since the heat
storage material 630 is bound to undergo an endothermic reaction
during the polishing process, the polishing pad 600 includes the
heat storage material 630, such that heat generated by mechanical
friction may be absorbed by the heat storage material 630 in the
polishing process. Whereby the degree of temperature increase
caused by the mechanical friction of the polishing pad 600 is
reduced to achieve the purpose of effectively lowering the
temperature of the polishing pad 600, as shown in FIG. 3. As a
result, the heat storage region M where the heat storage material
630 is disposed is located in a portion of the base layer 660
adjacent to the second adhesive layer 620b, so that the second
adhesive layer 620b disposed under the heat storage region M does
not have a problem of deterioration, deformation or adhesion decay
due to high temperature during the polishing process so as to
maintain the stability of the polishing process.
[0090] Moreover, in this embodiment, the polishing pad 600 includes
the cover layer 640 covering the heat storage material 630, but the
invention is not limited thereto. In other embodiments, in the case
where the material of the base layer 660 mixed with the heat
storage material 630 may seal the heat storage material 630
therein, the polishing pad 600 may not include the cover layer
640.
[0091] From the first to third, and sixth embodiments, it may be
known that the polishing pad 600 of the sixth embodiment may be
designed in the same concept as the polishing pads 100.about.300 of
the first to third embodiments. A heat storage region where a heat
storage material is disposed is formed above the first adhesive
layer 620a.
[0092] From the second and sixth embodiments, it may be known that
the polishing pad 600 of the sixth embodiment may also adopt the
same conceptual design as the polishing pad 200 of the second
embodiment. The heat storage material 630 originally disposed in
both of the polishing track region A and the non-polishing track
region B may be replaced by different heat storage materials
respectively disposed in the polishing track region A and the
non-polishing track region B to achieve the purpose of more evenly
decrease the temperature of the polishing pad 600 in the polishing
process. Incidentally, the temperature of the polishing track
region A is usually higher than the temperature of the
non-polishing track region B. Therefore, the heat storage material
630 may dispose within the polishing track region A only to achieve
the purpose of more evenly lowering the temperature of the
polishing pad 600 during the polishing process.
[0093] From the third and sixth embodiments, it may be known that
the polishing pad 600 of the sixth embodiment may also adopt the
same conceptual design as the polishing pad 300 of the third
embodiment. The heat storage material 630 may be used to form an
interface layer between the base layer and the second adhesive
layer in the heat storage region M, instead of being dispersed in
the material of the base layer 660 within the corresponding heat
storage region M in the sixth embodiment, to achieve the same
invention effect. Namely, the temperature of the polishing pad 600
may be reduced during the polishing process.
[0094] As described above, depending on the choice of materials for
each adhesive layer, the adhesive layers may have different
adhesive strength and the adhesive layers may also have different
resistance to the heat generated during the polishing process. In
view of the above, it should be understood by those of ordinary
skilled in the art based on the foregoing fifth and sixth
embodiments that the polishing pad of the invention may include two
heat storage regions where the heat storage material is disposed
and respectively located in a portion of the base layer adjacent to
the first adhesive layer and a portion of the base layer adjacent
to the second adhesive layer, or include two interface layers
respectively located between the base layer and the first adhesive
layer as well as between the base layer and the second adhesive
layer, at the same time.
[0095] FIG. 10 is a process flow diagram showing a polishing method
according to an embodiment of the invention. This polishing method
is suitably used to polish an object. In detail, the polishing
method may be applied to a polishing process for manufacturing an
industrial device, such as a device used in the electronic
industries including semiconductor devices, integrated circuits,
micro-electromechanical devices, energy conversion devices,
communication devices, optical devices, disks for storage, and
displays etc., and objects used for manufacturing the devices may
include semiconductor wafers, Group III-V wafers, carriers of
storage devices, ceramic substrates, polymer substrates, and glass
substrates, etc. However, the invention is not limited hereto.
[0096] Please refer to FIG. 10. First, in step S10, a polishing pad
is provided. In detail, in this embodiment, the polishing pad may
be any type of polishing pads as described in the foregoing
embodiments, e.g., polishing pad 100, 200, 300, 400, 500 or 600.
Relevant descriptions of the polishing pads 100, 200, 300, 400, 500
and 600 have been detailed above and thus will not be repeated
here.
[0097] Next, in step S12, a pressure is applied to an object.
Thereby, the object is pressed on the polishing pad and is in
contact with the polishing pad. In detail, as previously described,
the object is in contact with the polishing surface PS of the
polishing layer 110, 210, 310, 410, 510 or 610. In addition, the
method of applying pressure to the object is performed by using,
for example, a carrier capable of holding the object.
[0098] Thereafter, in step S14, relative motion is provided to the
object and the polishing pad, so as to perform a polishing process
on the object using the polishing pad and achieve the purpose of
planarization. In detail, the method for providing relative motion
to the object and the polishing pad is, for example, rotating the
polishing pad fixed on a platen via rotation of the platen.
[0099] Although the invention is disclosed as the embodiments
above, the embodiments are not meant to limit the invention. Any
person skilled in the art may make slight modifications and
variations without departing from the spirit and scope of the
invention. Therefore, the protection scope of the invention shall
be defined by the claims attached below.
* * * * *