U.S. patent application number 15/608584 was filed with the patent office on 2018-09-27 for light emitting diode capable of generating different light colors over single wafer.
The applicant listed for this patent is EXCELLENCE OPTO. INC.. Invention is credited to Kuo-Hsin HUANG, TZENG-GUANG TSAI, Kuo-Shu Tseng, CHUN-DER WU.
Application Number | 20180277716 15/608584 |
Document ID | / |
Family ID | 59689413 |
Filed Date | 2018-09-27 |
United States Patent
Application |
20180277716 |
Kind Code |
A1 |
HUANG; Kuo-Hsin ; et
al. |
September 27, 2018 |
LIGHT EMITTING DIODE CAPABLE OF GENERATING DIFFERENT LIGHT COLORS
OVER SINGLE WAFER
Abstract
A wafer substrate, a light emitting diode (LED) light-emitting
layer, a circuit layer and an excitation material layer are
included. The LED light-emitting layer includes at least two
light-emitting regions, independently distinguished. The circuit
layer includes at least two circuit structures that correspond to
the at least two light-emitting regions in quantity and are
independently controlled. The excitation material layer includes at
least one photo-luminescence material, at least one of the at least
two light-emitting regions is provided with different
photo-luminescence materials, and at least one of the at least two
light-emitting regions is not provided with the photo-luminescence
material. Accordingly, in the present invention, at least two light
colors can be formed over a single wafer substrate through the at
least two independently-controlled circuit structures and providing
the different photo-luminescence materials.
Inventors: |
HUANG; Kuo-Hsin; (Miaoli
County, TW) ; WU; CHUN-DER; (Miaoli County, TW)
; TSAI; TZENG-GUANG; (Miaoli County, TW) ; Tseng;
Kuo-Shu; (Miaoli County, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
EXCELLENCE OPTO. INC. |
Miaoli County |
|
TW |
|
|
Family ID: |
59689413 |
Appl. No.: |
15/608584 |
Filed: |
May 30, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 25/0753 20130101;
H01L 33/504 20130101 |
International
Class: |
H01L 33/08 20060101
H01L033/08; H01L 33/50 20060101 H01L033/50; H01L 33/00 20060101
H01L033/00 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 27, 2017 |
TW |
106204258 |
Claims
1. A light emitting diode (LED) light-emitting layer structure
capable of generating different light colors over a single wafer,
comprising: a wafer substrate; an LED light-emitting layer provided
on the wafer substrate, the LED light-emitting layer having at
least two light-emitting regions, independently distinguished; a
circuit layer providing a forward bias voltage for the LED
light-emitting layer, the circuit layer having at least two circuit
structures that correspond to the at least two light-emitting
regions in quantity and are independently controlled; and an
excitation material layer covering the LED light-emitting layer,
the excitation material layer having at least one
photo-luminescence material, at least one of the at least two
light-emitting regions being provided with the photo-luminescence
material, and at least one of the at least two light-emitting
regions being not provided with the photo-luminescence
material.
2. The LED light-emitting layer structure capable of generating
different light colors over a single wafer according to claim 1,
wherein the wafer substrate is conductive, the LED light-emitting
layer includes a first-type semiconductor layer, a light-emitting
layer and a second-type semiconductor layer, the at least two
circuit structures include a second-type electrode and a first-type
electrode respectively, the second-type electrode is provided below
the wafer substrate, and the first-type electrode is provided over
the first-type semiconductor layer.
3. The LED light-emitting layer structure capable of generating
different light colors over a single wafer according to claim 1,
wherein the LED light-emitting layer includes a first-type
semiconductor layer, a light-emitting layer and a second-type
semiconductor layer, the at least two circuit structures include a
second-type electrode and a first-type electrode respectively, and
the first-type electrode and the second-type electrode are provided
on the first-type semiconductor layer and the second-type
semiconductor layer respectively.
4. The LED light-emitting layer structure capable of generating
different light colors over a single wafer according to claim 1,
wherein when there are two or more light-emitting regions provided
with the photo-luminescence material, different photo-luminescence
materials are provided respectively.
5. The LED light-emitting layer structure capable of generating
different light colors over a single wafer according to claim 1,
wherein a combined appearance of the at least two light-emitting
regions is of any one of a fan shape, a rectangle and a
polygon.
6. A light emitting diode (LED) light-emitting layer structure
capable of generating different light colors over a single wafer,
comprising: a wafer substrate; an LED light-emitting layer provided
on the wafer substrate, the LED light-emitting layer having at
least two light-emitting regions (201), independently
distinguished; a circuit layer providing a forward bias voltage for
the LED light-emitting layer, the circuit layer having at least two
circuit structures that correspond to the at least two
light-emitting regions in quantity and are independently
controlled; and an excitation material layer covering the LED
light-emitting layer, the excitation material layer having at least
two photo-luminescence materials, and at least two different
photo-luminescence materials being provided on the at least two
light-emitting regions.
7. The LED light-emitting layer structure capable of generating
different light colors over a single wafer according to claim 6,
wherein the wafer substrate is conductive, the LED light-emitting
layer includes a first-type semiconductor layer, a light-emitting
layer and a second-type semiconductor layer, the at least two
circuit structures include a second-type electrode and a first-type
electrode respectively, the second-type electrode is provided below
the wafer substrate, and the first-type electrode is provided over
the first-type semiconductor layer.
8. The LED light-emitting layer structure capable of generating
different light colors over a single wafer according to claim 6,
wherein the LED light-emitting layer includes a first-type
semiconductor layer, a light-emitting layer and a second-type
semiconductor layer, the at least two circuit structures include a
second-type electrode and a first-type electrode respectively, and
the first-type electrode and the second-type electrode are provided
on the first-type semiconductor layer and the second-type
semiconductor layer respectively.
9. The LED light-emitting layer structure capable of generating
different light colors over a single wafer according to claim 6,
wherein a combined appearance of the at least two light-emitting
regions is of any one of a fan shape, a rectangle and a polygon.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to a light source structure of
a light emitting diode (LED), and more particularly to an LED
structure capable of generating different light colors over a
single wafer.
BACKGROUND OF THE INVENTION
[0002] A light emitting diode (LED) is a luminescence assembly. A
luminescence principle thereof is to exert a forward bias voltage
(current) on a III-V compound semiconductor material, and to
utilize a form of combining electrons and electron holes in the LED
with each other and converting energy into light, where light can
be emitted during energy release and the LED will not be as hot as
an incandescent lamp bulb after being used for a long time. The LED
is advantageous in small size, long life, low drive voltage, high
response rate and excellent seismic resistance, can meet demands
for various lightweight, thin and miniaturized devices, and has
become a product popularized in daily life.
[0003] Referring to FIG. 1 and FIG. 2, LEDs may be mainly divided
into a vertical-type LED (FIG. 1) and a horizontal-type LED (FIG.
2) according to different drive structures (electrode structures).
The LED structurally comprises a wafer substrate 1, an LED
light-emitting layer 2 and a circuit layer 3, the wafer substrate 1
being divided into a conductive (vertical-type LED) substrate and a
non-conductive (horizontal-type LED) substrate, and adopting a
silicon substrate, a sapphire substrate, etc.
[0004] The LED light-emitting layer 2 comprises a first-type
semiconductor layer 2a, a light-emitting layer 2b and a second-type
semiconductor layer 2c, constituting a sandwich structure. The
first-type semiconductor layer 2a may adopt an N-type semiconductor
layer or a P-type semiconductor, and the second-type semiconductor
layer 2c may adopt a P-type semiconductor layer or an N-type
semiconductor correspondingly. The light-emitting layer 2b is made
of a III-V compound material, which may be selected according to a
wavelength to be emitted. The circuit layer 3 comprises a
first-type electrode 3a and a second-type electrode 3b, which may
be provided on the same side of the LED light-emitting layer 2
(horizontal-type LED) separately or two sides of the LED
light-emitting layer 2 (vertical-type LED). Accordingly, after a
voltage is exerted between the first-type electrode 3a and the
second-type electrode 3b, an electron and an electron hole may be
provided respectively, the electron and the electron hole may be
combined inside the light-emitting layer 2b, and can further jump
by steps to generate exciting light.
[0005] The current light-emitting performance and efficiency of the
LED are increasingly advanced, a great variety of LEDs can be
widely applied to daily life, an LED capable of emitting light
having various colors such as red, orange, yellow, green, blue and
purple as well as invisible light such as infrared light and
ultraviolet light can be designed by utilizing the changes of
various compound semiconductor materials and assembly structures,
and various LEDs have been widely applied to outdoor advertising
boards, stop lamps, traffic lights, displays, etc.
[0006] At present, LED chips are of a single light-emitting
wavelength range specification, a packaging factory will package
this chip of the single light-emitting wavelength range
specification or needs to package two or more chips within
different light-emitting wavelength ranges into an identical
packaging body, the completed packaging bodies are arranged and
assembled as required, a single chip or a single LED assembly is
controlled by a control circuit, and LEDs having different
light-emitting wavelengths generate mixed light to than a
full-color display picture effect. But the prior art and structure
will generate a large clearance between LEDs, thus being adverse to
miniaturization.
[0007] Due to variation influences of manufacturing procedures and
materials, main wavelength distributions of LED chips produced in
each batch are different. When light having specific wavelength
characteristics needs to be emitted, demands of light emission in
different lighting occasions need to be met or a specific color for
full-color display needs to be formed, in order to meet
requirements for color accuracy, the earliest prior art refers to:
binning many LED grains by utilizing spot measurement, sorting and
binning programs to sort out LED grains close to the main
wavelength distributions to result in considerable cost and time
consumption of applications having different wavelength
characteristic demands.
[0008] Therefore, an American patent filed U.S. Pat. No. 8,569,083
B2 discloses a structure having a plurality of light-emitting
layers 22 over a substrate, a wavelength conversion convergence
layer and a wavelength conversion layer are stacked in sequence,
and light emitted by the plurality of light-emitting layers 22 is
absorbed and converted through the wavelength conversion
convergence layer and the wavelength conversion layer to make main
wavelengths of finally-emitted light relatively consistent. Thus, a
procedure of sorting and binning and then rearrangement according
to main wavelength distribution in a known LED array grain
manufacturing process is omitted, and production costs can be
reduced.
[0009] However, repeated wavelength conversion results in that the
utilization efficiency of light is low, the phenomenon of high heat
is easily caused, miniaturization is difficult to achieve and
high-brightness demands cannot be met. Moreover, a multi-layer
stacking structure will increase manufacturing costs and reduce
manufacturing yields, and demands in use are difficult to meet.
SUMMARY OF THE INVENTION
[0010] To this end, the present invention is mainly intended to
provide an LED capable of generating different light colors over a
single wafer, which can adjust light intensities of different light
colors as required and enables a color temperature of mixed light
to meet demands in use.
[0011] The present invention provides an LED capable of generating
different light colors over a single wafer, which comprises a wafer
substrate, an LED light-emitting layer, a circuit layer and an
excitation material layer, the LED light-emitting layer being
provided on the wafer substrate. The LED light-emitting layer has
at least two light-emitting regions, independently distinguished.
The circuit layer provides a forward bias voltage for the LED
light-emitting layer, and the circuit layer has at least two
circuit structures that correspond to the at least two
light-emitting regions in quantity and are independently
controlled. The excitation material layer covers the LED
light-emitting layer, the excitation material layer has at least
one photo-luminescence material, at least one of the at least two
light-emitting regions is provided with the photo-luminescence
material, at least one of the at least two light-emitting regions
is not provided with the photo-luminescence material, and light
having two wavelengths (provided with the photo-luminescence
material and not provided with the photo-luminescence material) may
be emitted at least.
[0012] Or, on the premise of covering the LED light-emitting layer
with the excitation material layer, the excitation material layer
has at least two photo-luminescence materials, at least two
different photo-luminescence materials are provided on the at least
two light-emitting regions, and light having two wavelengths may be
emitted at least likewise.
[0013] Accordingly, in the present invention, a manner of providing
the photo-luminescence material is adopted, and the at least two
independently-distinguished light-emitting regions and the at least
two independently-controlled circuit structures are cooperatively
adopted, so light having two wavelengths may be emitted at least.
Furthermore, by independently controlling the at least two circuit
structures, light intensities of the light having two wavelengths
can be further slightly adjusted to adjust color temperatures.
Moreover, the circuit structures are provided on the single wafer
substrate, processing and manufacturing can be completed at the
same time, miniaturization can be achieved, manufacturing costs can
be reduced, and demands in use can be met.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] FIG. 1 is an optical structure diagram of a known
vertical-type LED.
[0015] FIG. 2 is an optical structure diagram of a known
horizontal-type LED.
[0016] FIG. 3 is an optical structure diagram of a first embodiment
of the present invention.
[0017] FIG. 4 is an optical structure diagram of a second
embodiment of the present invention.
[0018] FIG. 5 is an optical structure diagram of a third embodiment
of the present invention.
[0019] FIG. 6 is an independent distinguishing diagram 1 of an LED
light-emitting layer of the present invention.
[0020] FIG. 7 is an independent distinguishing diagram 2 of an LED
light-emitting layer of the present invention.
[0021] FIG. 8 is an independent distinguishing diagram 3 of an LED
light-emitting layer of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0022] In order to make a member further understand and accept
features, purposes and effects of the present invention,
descriptions will be made with reference to a preferable embodiment
and in conjunction with the drawings as follows.
[0023] Referring to FIG. 3, FIG. 3 is an optical structure diagram
of a first embodiment of the present invention. The structure is
illustrated with a vertical-type LED. The structure is an LED
light-emitting layer structure capable of generating different
light colors over a single wafer, which comprises a wafer substrate
10, an LED light-emitting layer 20, a circuit layer 30 and an
excitation material layer 40. In the present embodiment, the wafer
substrate 10 is conductive and may adopt a silicon substrate.
[0024] The LED light-emitting layer 20 is provided on the wafer
substrate 10, the LED light-emitting layer 20 includes at least two
light-emitting regions 201, independently distinguished, and the
LED light-emitting layer 20 may include a first-type semiconductor
layer 21, a light-emitting layer 22 and a second-type semiconductor
layer 23. The first-type semiconductor layer 21 may adopt an N-type
semiconductor layer or a P-type semiconductor, and the second-type
semiconductor layer 23 may adopt a P-type semiconductor layer or an
N-type semiconductor correspondingly.
[0025] The circuit layer 30 provides a forward bias voltage for the
LED light-emitting layer 20, the circuit layer 30 includes at least
two circuit structures 301 that correspond to the at least two
light-emitting regions 201 in quantity and are independently
controlled, and the at least two circuit structures 301 may include
a second-type electrode 32 and a first-type electrode 31
respectively. The second-type electrode 32 is provided below the
wafer substrate 10, and the first-type electrode 31 is provided
over the semiconductor layer 21.
[0026] The excitation material layer 40 covers the LED
light-emitting layer 20, the excitation material layer 40 includes
at least two photo-luminescence materials 401, and at least two
different photo-luminescence materials 401 are provided on the at
least two light-emitting regions 201.
[0027] Referring to FIG. 4, FIG. 4 is an optical structure diagram
of a second embodiment of the present invention. In the present
embodiment, the excitation material layer 40 includes at least one
photo-luminescence material 401, at least one of the at least two
light-emitting regions 201 is provided with the photo-luminescence
material 401, and at least one of the at least two light-emitting
regions 201 is not provided with the photo-luminescence material
401. Different from the first embodiment, the present embodiment is
characterized in that the excitation material layer 40 does not
cover the at least one LED light-emitting layer 20, and when there
are two or more light-emitting regions 201 provided with the
photo-luminescence material 401, different photo-luminescence
materials 401 may be provided respectively.
[0028] Referring to FIG. 5, FIG. 5 is an optical structure diagram
of a third embodiment of the present invention. The structure is
illustrated with a horizontal-type LED. Different from the first
embodiment, the present embodiment is characterized in that the
wafer substrate 10 is not limited to a highly-conductive material,
and therefore a silicon substrate may be adopted; the first-type
semiconductor layer 21 is provided on the wafer substrate 10, and
the first-type semiconductor layer 21 is exposed to allow provision
of the first-type electrode 31. That is, regions of the
light-emitting layer 22 and the second-type semiconductor layer 23
will be drawn back, and in addition, the second-type electrode 32
is provided on the second-type semiconductor layer 23.
[0029] Referring to FIG. 6, FIG. 7 and FIG. 8, a combined
appearance of the at least two light-emitting regions 201 may be of
multiple shapes that can be set according to practical use demands,
and the two light-emitting regions 201 may be of any one of a fan
shape (as shown in FIG. 6), a rectangle (as shown in FIG. 7) and a
polygon (as shown in FIG. 8).
[0030] As above, compared with the prior art, the present invention
has, at least advantages as follows.
[0031] 1. A manner of providing the photo-luminescence material is
adopted, and the at least two independently-distinguished
light-emitting regions and the at least two
independently-controlled circuit structures are cooperatively
adopted, so light having two wavelengths may be emitted at
least.
[0032] 2. By independently controlling the at least two circuit
structures, light intensities of the light having two wavelengths
can be further slightly adjusted to adjust color temperatures so as
to make wavelengths consistent.
[0033] 3. The circuit structures are provided on the single wafer
substrate, processing and manufacturing can be completed at the
same time, miniaturization can be achieved, manufacturing costs can
be reduced, and demands in use can be met.
* * * * *