U.S. patent application number 15/907935 was filed with the patent office on 2018-09-27 for semiconductor storage device.
The applicant listed for this patent is TOSHIBA MEMORY CORPORATION. Invention is credited to Katsuhiko HOYA, Tadashi MIYAKAWA, Hiroyuki TAKENAKA.
Application Number | 20180277595 15/907935 |
Document ID | / |
Family ID | 63582922 |
Filed Date | 2018-09-27 |
United States Patent
Application |
20180277595 |
Kind Code |
A1 |
MIYAKAWA; Tadashi ; et
al. |
September 27, 2018 |
SEMICONDUCTOR STORAGE DEVICE
Abstract
A semiconductor storage device includes first and second wirings
that are in a first layer above the substrate, extend along a first
direction, and are adjacent to each other along a second direction,
third and fourth wirings that are in a second layer above the first
layer, extend along the second direction, and are adjacent to each
other along the first direction, first and second memory cells on
the first wiring, and a third memory cell on the second wiring. The
first to third memory cells each include a variable resistance
element and a switching element. The switching element of the first
memory cell includes a gate coupled to the third wiring. The
switching elements of the second and third memory cells each
include a gate coupled to the fourth wiring. The variable
resistance elements of the first to third memory cells are formed
with equal distances from each other.
Inventors: |
MIYAKAWA; Tadashi; (Yokohama
Kanagawa, JP) ; HOYA; Katsuhiko; (Yokohama Kanagawa,
JP) ; TAKENAKA; Hiroyuki; (Kamakura Kanagawa,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TOSHIBA MEMORY CORPORATION |
Tokyo |
|
JP |
|
|
Family ID: |
63582922 |
Appl. No.: |
15/907935 |
Filed: |
February 28, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 13/0002 20130101;
H01L 27/228 20130101; H01L 29/7827 20130101; H01F 10/3254 20130101;
G11C 2213/72 20130101; H01F 10/3286 20130101; G11C 13/0004
20130101; H01L 23/528 20130101; H01L 43/02 20130101; H01L 43/08
20130101; G11C 11/1675 20130101; G11C 11/161 20130101; G11C 11/1673
20130101 |
International
Class: |
H01L 27/22 20060101
H01L027/22; H01L 23/528 20060101 H01L023/528; H01L 29/78 20060101
H01L029/78; G11C 11/16 20060101 G11C011/16; H01L 43/02 20060101
H01L043/02; H01L 43/08 20060101 H01L043/08; H01F 10/32 20060101
H01F010/32 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 21, 2017 |
JP |
2017-054755 |
Claims
1. A semiconductor storage device comprising: a substrate; a first
wiring and a second wiring that are in a first layer above the
substrate, extend along a first direction that is parallel to a
surface of the substrate, and are adjacent to each other along a
second direction that intersects with the first direction and is
parallel to the surface of the substrate; a third wiring and a
fourth wiring that are in a second layer above the first layer,
extend along the second direction, and are adjacent to each other
along the first direction; a first memory cell and a second memory
cell on a surface of the first wiring; and a third memory cell on a
surface on the second wiring, wherein the first memory cell, the
second memory cell, and the third memory cell each include a
variable resistance element and a switching element, the switching
element of the first memory cell having a gate coupled to the third
wiring, and the switching element of the second memory cell and the
switching element of the third memory cell each having a gate
coupled to the fourth wiring, and the variable resistance element
of the first memory cell, the variable resistance element of the
second memory cell, and the variable resistance element of the
third memory cell are formed with equal distances from each other
in a plane parallel to the surface of the substrate.
2. The semiconductor storage device according to claim 1, wherein
the variable resistance element of the first memory cell and the
variable resistance element of the second memory cell are aligned
in the first direction.
3. The semiconductor storage device according to claim 2, wherein
the switching element of the second memory cell and the switching
element of the third memory cell are aligned in the second
direction.
4. The semiconductor storage device according to claim 2, further
comprising: a fourth memory cell on the surface of the second
wiring, the fourth memory cell including a variable resistance
element and a switching element, wherein the switching element of
the fourth memory cell includes a gate coupled to the third wiring,
and the variable resistance element of the first memory cell, the
variable resistance element of the third memory cell, and the
variable resistance element of the fourth memory cell are located
with equal distances from each other in the plane parallel to the
surface of the substrate.
5. The semiconductor storage device according to claim 4, wherein
the switching element of the first memory cell, the switching
element of the second memory cell, and the switching element of the
third memory cell are located with equal distances from each other
in the plane parallel to the surface of the substrate, and the
switching element of the first memory cell, the switching element
of the third memory cell, and the switching element of the fourth
memory cell are located with equal distances from each other in the
plane parallel to the surface of the substrate.
6. The semiconductor storage device according to claim 1, wherein
the variable resistance element of the second memory cell and the
variable resistance element of the third memory cell are aligned in
the second direction.
7. The semiconductor storage device according to claim 6, wherein
the switching element of the first memory cell and the switching
element of the second memory cell are aligned in the first
direction.
8. The semiconductor storage device according to claim 6, further
comprising: a fourth memory cell on the surface of the second
wiring, the fourth memory cell including a variable resistance
element and a switching element, wherein the switching element of
the fourth memory cell includes a gate coupled to the third wiring,
and the variable resistance element of the first memory cell, the
variable resistance element of the third memory cell, and the
variable resistance element of the fourth memory cell are located
with equal distances from each other in the plane parallel to the
surface of the substrate.
9. The semiconductor storage device according to claim 8, wherein
the switching element of the first memory cell, the switching
element of the second memory cell, and the switching element of the
third memory cell are located with equal distances from each other
in the plane parallel to the surface of the substrate, and the
switching element of the first memory cell, the switching element
of the third memory cell, and the switching element of the fourth
memory cell are located with equal distances in the plane parallel
to the surface of the substrate.
10. The semiconductor storage device according to claim 1, wherein
the switching elements are between the substrate and the variable
resistance elements.
11. The semiconductor storage device according to claim 1, wherein
the variable resistance elements are between the substrate and the
switching elements.
12. A semiconductor storage device comprising: a substrate; a first
wiring and a second wiring that are in a first layer above the
substrate, extend along a first direction that is parallel to a
surface of the substrate, and are adjacent to each other along a
second direction that intersects with the first direction and is
parallel to the surface of the substrate; a third wiring and a
fourth wiring that are in a second layer above the first layer,
extend along the second direction, and are adjacent to each other
along the first direction; a first memory cell between the first
wiring and the third wiring; a second memory cell between the
second wiring and the third wiring; and a third memory cell between
the second wiring and the fourth wiring, wherein the first memory
cell, the second memory cell, and the third memory cell each
include a variable resistance element and a switching element, and
the variable resistance element of the first memory cell, the
variable resistance element of the second memory cell, and the
variable resistance element of the third memory cell are located
with equal distances from each other in a plane parallel to the
surface of the substrate.
13. The semiconductor storage device according to claim 12, wherein
the variable resistance element of the first memory cell and the
variable resistance element of the second memory cell are aligned
in the second direction.
14. The semiconductor storage device according to claim 13, wherein
the switching element of the second memory cell and the switching
element of the third memory cell are aligned in the first
direction.
15. The semiconductor storage device according to claim 13, further
comprising: a fourth memory cell between the first wiring and the
fourth wiring, the fourth memory cell including a variable
resistance element and a switching element, wherein the variable
resistance element of the first memory cell, the variable
resistance element of the third memory cell, and the variable
resistance element of the fourth memory cell are located with equal
distances from each other in a plane parallel to the surface of the
substrate.
16. The semiconductor storage device according to claim 15, wherein
the switching element of the first memory cell, the switching
element of the second memory cell, and the switching element of the
third memory cell are located with equal distances from each other
in the plane parallel to the surface of the substrate, and the
switching element of the first memory cell, the switching element
of the third memory cell, and the switching element of the fourth
memory cell are located with equal distances from each other in the
plane parallel to the surface of the substrate.
17. The semiconductor storage device according to claim 12, wherein
the variable resistance element of the second memory cell and the
variable resistance element of the third memory cell are aligned in
the first direction.
18. The semiconductor storage device according to claim 17, wherein
the switching element of the first memory cell and the switching
element of the second memory cell are aligned in the second
direction.
19. The semiconductor storage device according to claim 18, further
comprising: a fourth memory cell between the first wiring and the
fourth wiring, the fourth memory cell including a variable
resistance element and a switching element, wherein the variable
resistance element of the first memory cell, the variable
resistance element of the third memory cell, and the variable
resistance element of the fourth memory cell are located with equal
distances from each other in a plane parallel to the surface of the
substrate.
20. The semiconductor storage device according to claim 19, wherein
the switching element of the first memory cell, the switching
element of the second memory cell, and the switching element of the
third memory cell are located with equal distances from each other
in the plane parallel to the surface of the substrate, and the
switching element of the first memory cell, the switching element
of the third memory cell, and the switching element of the fourth
memory cell are located with equal distances from each other in the
plane parallel to the surface of the substrate.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is based upon and claims the benefit of
priority from Japanese Patent Application No. 2017-054755, filed
Mar. 21, 2017, the entire contents of which are incorporated herein
by reference.
FIELD
[0002] Embodiments described herein relate generally to a
semiconductor storage device.
BACKGROUND
[0003] A semiconductor storage device including a variable
resistance element is known.
DESCRIPTION OF THE DRAWINGS
[0004] FIG. 1 is a block diagram showing a configuration of a
semiconductor storage device according to a first embodiment.
[0005] FIG. 2 is a schematic diagram of a magnetic tunnel junction
element of the semiconductor storage device according to the first
embodiment.
[0006] FIG. 3 is a top view for describing a configuration of a
memory cell array of the semiconductor storage device according to
the first embodiment.
[0007] FIGS. 4A and 4B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the first embodiment.
[0008] FIGS. 5A and 5B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the first embodiment.
[0009] FIGS. 6A and 6B are sectional views for describing a
configuration of a memory cell array of a semiconductor storage
device according to a modification example of the first
embodiment.
[0010] FIGS. 7A and 7B are sectional views for describing the
configuration of the memory cell array of a semiconductor storage
device according to the modification example of the first
embodiment.
[0011] FIG. 8 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to a
second embodiment.
[0012] FIGS. 9A and 9B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the second embodiment.
[0013] FIGS. 10A and 10B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the second embodiment.
[0014] FIGS. 11A and 11B are sectional views for describing a
configuration of a memory cell array of a semiconductor storage
device according to a modification example of the second
embodiment.
[0015] FIGS. 12A and 11B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the modification example of the second
embodiment.
[0016] FIG. 13 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to a
third embodiment.
[0017] FIGS. 14A and 14B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the third embodiment.
[0018] FIGS. 15A and 15B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the third embodiment.
[0019] FIGS. 16A and 15B are sectional views for describing a
configuration of a memory cell array of a semiconductor storage
device according to a modification example of the third
embodiment.
[0020] FIGS. 17A and 17B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the modification example of the third
embodiment.
[0021] FIG. 18 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to a
fourth embodiment.
[0022] FIGS. 19A and 19B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the fourth embodiment.
[0023] FIGS. 20A and 20B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the fourth embodiment.
[0024] FIGS. 21A and 20B are sectional views for describing a
configuration of a memory cell array of a semiconductor storage
device according to a modification example of the fourth
embodiment.
[0025] FIGS. 22A and 22B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the modification example of the fourth
embodiment.
[0026] FIG. 23 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to a
fifth embodiment.
[0027] FIGS. 24A and 24B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the fifth embodiment.
[0028] FIGS. 25A and 25B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the fifth embodiment.
[0029] FIGS. 26A and 26B are sectional views for describing a
configuration of a memory cell array of a semiconductor storage
device according to a modification example of the fifth
embodiment.
[0030] FIGS. 27A and 27B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the modification example of the fifth
embodiment.
[0031] FIG. 28 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to a
sixth embodiment.
[0032] FIGS. 29A and 29B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the sixth embodiment.
[0033] FIGS. 30A and 30B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the sixth embodiment.
[0034] FIGS. 31A and 31B are sectional views for describing a
configuration of a memory cell array of a semiconductor storage
device according to a modification example of the sixth
embodiment.
[0035] FIGS. 32A and 32B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the modification example of the sixth
embodiment.
[0036] FIG. 33 is a block diagram showing a configuration of a
semiconductor storage device according to a seventh embodiment.
[0037] FIG. 34 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to a
seventh embodiment.
[0038] FIGS. 35A and 35B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the seventh embodiment.
[0039] FIGS. 36A and 36B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the seventh embodiment.
[0040] FIG. 37 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to an
eighth embodiment.
[0041] FIGS. 38A and 38B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the eighth embodiment.
[0042] FIGS. 39A and 39B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the eighth embodiment.
[0043] FIG. 40 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to a
ninth embodiment.
[0044] FIGS. 41A and 41B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the ninth embodiment.
[0045] FIGS. 42A and 42B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the ninth embodiment.
[0046] FIG. 43 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to a
tenth embodiment.
[0047] FIGS. 44A and 44B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the tenth embodiment.
[0048] FIGS. 45A and 45B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the tenth embodiment.
[0049] FIG. 46 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to an
eleventh embodiment.
[0050] FIGS. 47A and 47B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the eleventh embodiment.
[0051] FIGS. 48A and 48B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the eleventh embodiment.
[0052] FIG. 49 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to a
twelfth embodiment.
[0053] FIGS. 50A and 50B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the twelfth embodiment.
[0054] FIGS. 51A and 51B are sectional views for describing the
configuration of the memory cell array of the semiconductor storage
device according to the twelfth embodiment.
[0055] FIG. 52 is a top view for describing a configuration of a
memory cell array of a semiconductor storage device according to a
thirteenth embodiment.
[0056] FIG. 53 is a sectional view for describing the configuration
of the memory cell array of the semiconductor storage device
according to the thirteenth embodiment.
[0057] FIG. 54 is a sectional view for describing the configuration
of the memory cell array of the semiconductor storage device
according to the thirteenth embodiment.
[0058] FIGS. 55A and 55B are sectional views for describing a
configuration of a memory cell of a semiconductor storage device
according to a modification example.
DETAILED DESCRIPTION
[0059] Embodiments provide a semiconductor storage device having
memory elements arranged such that distances between memory
elements adjacent to each other are equal to each other while
achieving an overall reduction in size of the semiconductor storage
device.
[0060] In general, according to one embodiment, a semiconductor
storage device includes a substrate, a first wiring and a second
wiring that are in a first layer above the substrate, extend along
a first direction that is parallel to a surface of the substrate,
and are adjacent to each other along a second direction that
intersects with the first direction and is parallel to the surface
of the substrate, a third wiring and a fourth wiring that are in a
second layer above the first layer, extend along the second
direction, and are adjacent to each other along the first
direction, a first memory cell and a second memory cell on a
surface of the first wiring, and a third memory cell on a surface
on the second wiring. The first memory cell, the second memory
cell, and the third memory cell each include a variable resistance
element and a switching element, the switching element of the first
memory cell having a gate coupled to the third wiring, and the
switching element of the second memory cell and the switching
element of the third memory cell each having a gate coupled to the
fourth wiring. The variable resistance element of the first memory
cell, the variable resistance element of the second memory cell,
and the variable resistance element of the third memory cell are
formed with equal distances from each other in a plane parallel to
the surface of the substrate.
[0061] As used herein, a "switching element" is a transistor in
some embodiments and a bi-direction switching element, also
described herein as a selector, in other embodiments.
[0062] Hereinafter, embodiments will be described with reference to
the drawings. In the following description, components having the
same function and configuration will be assigned a common reference
sign. When a plurality of components that are assigned a common
reference sign is to be distinguished from one another, the
components are distinguished by assigning suffixes to the common
reference sign. When it is not necessary to distinguish between the
plurality of components, only the common reference sign is assigned
to the components.
1. First Embodiment
[0063] A semiconductor storage device according to a first
embodiment will be described. In the semiconductor storage device
according to the first embodiment, a magnetic storage device with
perpendicular magnetization using a magnetic tunnel junction (MTJ)
element as a memory element is described as an example.
1.1 Configuration
[0064] Initially, a configuration of the semiconductor storage
device according to the first embodiment will be described.
1.1.1. Configuration of Semiconductor Storage Device
[0065] FIG. 1 is a block diagram showing a configuration of a
semiconductor storage device 1 according to the first embodiment.
As shown in FIG. 1, the semiconductor storage device 1 includes a
memory cell array 11, write circuit and read circuit (WC/RC) 12, a
row decoder 13, a page buffer 14, input and output circuit 15, and
a control unit 16.
[0066] The memory cell array 11 includes a plurality of memory
cells MC associated with rows and columns. The memory cells MC
present in the same row are connected to the same word line WL, and
ends of the memory cells MC present in the same column are
connected to the same bit line BL and the same source line SL,
respectively.
[0067] The memory cell MC includes a select transistor ST and a
magnetic tunnel junction element MTJ. For example, the select
transistor ST includes a first end connected to the bit line BL, a
second end connected to the first end of the magnetic tunnel
junction element MTJ, and a gate connected the word line WL. The
select transistor ST is provided as a switch that controls the
supply and stoppage of a current to the magnetic tunnel junction
element MTJ. For example, the magnetic tunnel junction element MTJ
includes a second end connected to the source line SL. The magnetic
tunnel junction element MTJ may switch between a low resistance
state and a high resistance state due to the flow of a current. The
magnetic tunnel junction element MTJ is able to write data
depending on a change of the resistance state, and functions as a
variable resistance element that is able to retain the written data
in a non-volatile manner and from which the written data can be
read.
[0068] The WC/RC 12 is connected to the bit line BL and the source
line SL. The WC/RC 12 supplies a current to the memory cell MC
which is an operation target through the bit line BL and the source
line SL, and writes and reads data to and from the memory cell MC.
More specifically, the write circuit of the WC/RC 12 writes data in
the memory cell MC. For example, the write circuit includes a write
driver and a current sink. The read circuit of the WC/RC 12 reads
data from the memory cell MC. For example, the read circuit
includes a sense amplifier.
[0069] The row decoder 13 is connected to the memory cell array 11
through the word line WL. The row decoder 13 decodes a row address
that designates a row of the memory cell array 11. The row decoder
selects the word line WL depending on the decoding result, and
applies a voltage necessary to perform write and read operations of
data to the selected word line WL.
[0070] The page buffer 14 temporarily retains data written in the
memory cell array 11 and data read from the memory cell array 11
for a data unit called a page.
[0071] The input and output circuit 15 transmits various signals
received from the outside of the semiconductor storage device 1 to
the control unit 16 and the page buffer 14, and transmits various
information items from the control unit 16 and the page buffer 14
to the outside of the semiconductor storage device 1.
[0072] The control unit 16 (which is a control circuit in one
embodiment) is connected to the WC/RC 12, the row decoder 13, the
page buffer 14, and the input and output circuit 15. The control
unit 16 controls the WC/RC 12, the row decoder 13, and the page
buffer 14 according to various signals received by the input and
output circuit 15 from the outside of the semiconductor storage
device 1.
1.1.2. Configuration of Magnetic Tunnel Junction Element
[0073] Hereinafter, a configuration of the magnetic tunnel junction
element of the semiconductor storage device according to the first
embodiment will be described with reference to FIG. 2. FIG. 2 is a
schematic diagram for describing the configuration of the magnetic
tunnel junction element of the semiconductor storage device
according to the first embodiment.
[0074] As shown in FIG. 2, a memory element layer 20 functioning as
the magnetic tunnel junction element MTJ includes a plurality of
stacked films, and includes a current path through which a current
flows in a direction perpendicular to a film surface. The memory
element layer 20 includes a ferromagnetic layer 21 functioning as a
memory layer, a non-magnetic layer 22 functioning as a tunnel
barrier layer, and a ferromagnetic layer 23 functioning as a
reference layer. For example, the memory element layer 20 is
configured such that the ferromagnetic layer 21, the non-magnetic
layer 22, and the ferromagnetic layer 23 are sequentially stacked.
The magnetic tunnel junction element MTJ is a perpendicular
magnetization MTJ element in which the magnetization orientations
of the ferromagnetic layers 21 and 23 face directions perpendicular
to the film surfaces thereof.
[0075] The ferromagnetic layer 21 is a ferromagnetic layer having a
direction of easy magnetization that is perpendicular to the film
surface, and contains, for example, cobalt iron boron (CoFeB). The
ferromagnetic layer 21 has a magnetization orientation facing any
one of a direction of the select transistor ST and a direction of
the ferromagnetic layer 23. The magnetization property of the
ferromagnetic layer 21 is different from that of the ferromagnetic
layer 23 such that the magnetization orientation of the
ferromagnetic layer 21 is more easily reversed than that of the
ferromagnetic layer 23.
[0076] The non-magnetic layer 22 is a non-magnetic insulating film,
and contains, for example, magnesium oxide (MgO).
[0077] The ferromagnetic layer 23 is a ferromagnetic layer having a
direction of easy magnetization that is perpendicular to a film
surface, and contains, for example, cobalt iron boron (CoFeb). The
magnetization orientation of the ferromagnetic layer 23 is fixed.
The "magnetization orientation is fixed" means that the
magnetization orientation is not changed due to a current having a
magnitude enough to reverse the magnetization orientation of the
ferromagnetic layer 21. The ferromagnetic layer 21, the
non-magnetic layer 22, and the ferromagnetic layer 23 constitute
magnetic tunnel junction.
[0078] The first embodiment adopts a spin injection writing method
that employs a write current which directly flows to the magnetic
tunnel junction element MTJ, and the magnetization orientation of
the ferromagnetic layer 21 is controlled by the write current. The
magnetic tunnel junction element MTJ may enter any one of the low
resistance state and the high resistance state depending on whether
the magnetization orientations of the ferromagnetic layer 21 and
the ferromagnetic layer 23 are parallel or anti-parallel.
[0079] When the write current flows to the magnetic tunnel junction
element MTJ in a direction of an arrow A1 in FIG. 2, that is,
toward the ferromagnetic layer 23 from the ferromagnetic layer 21,
the magnetization orientations of the ferromagnetic layer 21 and
the ferromagnetic layer 23 become parallel. In a case where the
magnetization orientations are parallel, the resistance of the
magnetic tunnel junction element MTJ is low, and the magnetic
tunnel junction element MTJ is in the low resistance state. The low
resistance state is called a "parallel (P) state", and is defined,
for example, as a state of data "0".
[0080] When the write current flows to the magnetic tunnel junction
element MTJ in a direction of an arrow A2 in FIG. 2, that is,
toward the ferromagnetic layer 21 from the ferromagnetic layer 23,
the magnetization orientations of the ferromagnetic layer 21 and
the ferromagnetic layer 23 become anti-parallel. In a case where
the magnetization orientations are anti-parallel, the resistance of
the magnetic tunnel junction element MTJ is high, and the magnetic
tunnel junction element MTJ is in the high resistance state. The
high resistance state is called an "anti-parallel (AP) state", and
is defined, for example, as a state of data "1".
[0081] Although it will be described below that the method of
defining the data is performed according to the above-described
example, the method of defining data "1" and data "0" is not
limited to the above-described example. For example, the P state
may be defined as data "1", and the AP state may be defined as data
"0".
1.1.3. Stacked Structure of Memory Cell Array
[0082] Hereinafter, a stacked structure of the memory cell array of
the semiconductor storage device according to the first embodiment
will be described. In the following description, it is assumed that
a plane on which the bit line BL, the source line SL, and the word
line WL extend is the xy-plane, and an axis perpendicular to the
xy-plane is the z-axis. For example, the x-axis and the y-axis are
defined as the axes which are perpendicular to each other in the
xy-plane.
[0083] Initially, a layout of the memory cell array 11 in the
xy-plane will be described with reference to FIG. 3. FIG. 3 is a
top view of the memory cell array 11 of the semiconductor storage
device according to the first embodiment when viewed in a +z-axis
direction.
[0084] As shown in FIG. 3, a plurality of wiring layers 31 each
functioning as the source line SL extends, for example, along the
x-axis direction (also referred to herein as a column direction),
and is arranged along the y-axis direction (also referred to herein
as a row direction) at equal intervals. In the example of FIG. 3,
four wiring layers 31 corresponding to an (m-1)-th-row source line
SL(m-1), an m-th-row source line SLm, an (m+1)-th-row source line
SL(m+1), and an (m+2)-th-row source line SL(m+2) are illustrated
(where m is an arbitrary integer). Two wiring layers 31 adjacent to
each other are separated from each other along the y-axis direction
by a distance d1. The "two elements are separated from each other
by a distance d along a certain direction" means that a distance
between a center of a width of any one of the two elements in the
certain direction and a center of a width of the other element in
the certain direction is separated along the certain direction by
the distance d.
[0085] A plurality of wiring layers 32 each functioning as the word
line WL is formed above the wiring layers 31. For example, the
wiring layers 32 extend along the y-axis direction, and are
arranged along the x-axis direction at equal intervals. In the
example of FIG. 3, four wiring layers 32 corresponding to an
(n-1)-th-column word line WL(n-1), an n-th-column word line WLn, an
(n+1)-th-column word line WL(n+1), and an (n+2)-th-column word line
WL(n+2) are illustrated (where n is an arbitrary integer). Two
wiring layers 32 adjacent to each other are separated from each
other along the x-axis direction by a distance d2. The distance d2
is longer than the distance d1. A ratio (d1:d2) between the
distance d1 and the distance d2 is expressed, for example, by the
following expression.
d1:d2= 3/2:1
[0086] A plurality of wiring layers 33 each functioning as the bit
line BL is formed above the wiring layers 32. For example, the
wiring layers 33 extend along the x-axis direction, and are
arranged along the y-axis direction at equal intervals. In the
example of FIG. 3, four wiring layers 33 corresponding to a
(m-1)-th-row bit line BL(m-1), an m-th-row bit line BLm, an
(m+1)-th-row bit line BL(m+1), and an (m+2)-th-row bit line BL(m+2)
are illustrated. Specifically, two wiring layers 33 adjacent to
each other are separated from each other along the y-axis direction
by the distance d1. Although a center of a width of the wiring
layer 33 along the y-axis direction matches a center of a width of
the wiring layer 31 in the y-axis direction in the xy-plane in the
example of FIG. 3, the present embodiment is not limited
thereto.
[0087] In FIG. 3, a selection element layer 34 functioning as the
select transistor ST is formed in a region in which the wiring
layers 31 and 33 intersect with the wiring layer 32. For example,
the selection element layers 34 each have a cylindrical shape that
extends along the z-axis direction, and are formed between the
wiring layers 31 and the wiring layers 33. In the example of FIG.
3, a center of a circle (hereinafter, simply referred to as a
"center" of the selection element layer 34) which is a section of
the selection element 34 taken along the xy-plane, is located, for
example, at an intersection of a central line of the wiring layer
31 or 33 on the x-axis direction and a central line of the wiring
layer 32 along the y-axis direction. That is, the selection element
layers 34 are arranged in a rectangular grid in the xy-plane.
Specifically, the selection element layers 34 are arranged along
the x-axis direction at equal intervals for every distance d2, and
are arranged along the y-axis direction at equal intervals for
every distance d1. The selection element layers are arranged in
this manner, and thus, the selection element layers 34 are formed
one by one for the combination of the wiring layers 31 and 33 in a
certain row and the wiring layer 32 in a certain column.
[0088] In the following description, an element Y corresponding to
the combination of the m-th-row wiring layers 31 and 33 and the
n-th-column wiring layer 32 is described as an element Y(m, n) for
simplicity of description.
[0089] In FIG. 3, the memory element layers 20 are formed such that
at least some thereof overlap in regions occupied by the selection
element layers 34. For example, the memory element layers 20 each
have a cylindrical shape that extends along the z-axis direction,
and are formed between the wiring layers 31 and the wiring layers
33.
[0090] The memory element layers 20 are arranged in a honeycomb
shape in the xy-plane. Specifically, the memory element layers 20
are arranged in positions of vertices and a center of a regular
hexagon of which a length of one side is the distance d2 in the
xy-plane. More specifically, the memory element layers 20 are
arranged along the x-axis direction at equal intervals for every
distance d2, and are arranged along the y-axis direction at equal
intervals for every distance 2d1. That is, an (m-1)-th-row memory
element layer 20 and an (m+1)-th-row memory element layer 20 are
aligned in the y-axis direction. An m-th-row memory element layer
20 and an (m+2)-th-row memory element layer 20 are aligned in the
y-axis direction. However, the m-th-row memory element layer 20 and
the (m-1)-th-row memory element layer 20 are not aligned in the
y-axis direction, and the m-th-row memory element layer 20 and the
(m+1)-th-row memory element layer 20 are not aligned in the y-axis
direction.
[0091] In the example of FIG. 3, a center of a circle which is a
section of the m-th-row memory element layer 20 taken along the
xy-plane (hereinafter, simply referred to as a "center" of the
memory element layer 20) is located in a position offset from a
center of a width of the corresponding wiring layer 32 along the
x-axis direction in the +x-axis direction. Centers of the
(m-1)-th-row and (m+1)-th-row memory element layers 20 are located
in positions offset from the center of the width of the
corresponding wiring layer 32 along the x-axis direction in the
-x-axis direction. The center of the m-th-row memory element layer
20 is located in a position offset from the centers of the
(m-1)-th-row and (m+1)-th-row memory element layers 20 along the
x-axis direction by a distance d2/2.
[0092] The memory element layers are arranged in this manner, and
thus, the memory element layers 20 are formed so as to correspond
to the selection element layers 34, and are formed one by one for
the combination of the wiring layers 31 and 33 in a certain row and
the wiring layer 32 in a certain column. An arbitrary memory
element layer 20 is disposed with equal distances from six memory
element layers 20 adjacent to the arbitrary memory element layer 20
in the xy-plane. Specifically, six memory element layers 20(m,
n-1), 20(m, n+1), 20(m-1, n), 20(m-1, n+1), 20(m+1, n), and 20(m+1,
n+1) adjacent to the memory element layer 20(m, n) are arranged in
the vertices of the regular hexagon of which one side is the
distance d2, and the memory element layer 20(m, n) is disposed in
the center of the regular hexagon. As another example, six memory
element layers 20(m+1, n-1), 20(m+1, n+1), 20(m, n-1), 20(m, n),
20(m+2, n-1), and 20(m+2, n) adjacent to the memory element layer
20(m+1, n) are arranged in the vertices of the regular hexagon of
which one side is the distance d2, and the memory element layer
20(m+1, n) is disposed in the center of the regular hexagon.
[0093] Hereinafter, configurations of sections of the memory cell
array 11 described in FIG. 3 which are taken along the xz-plane and
the yz-plane will be described with reference to FIGS. 4A to 5B.
FIGS. 4A to 5B are examples of sectional views of the stacked
structure of the memory cell array of the semiconductor storage
device according to the first embodiment, which are taken along the
xz-plane and the yz-plane. Specifically, FIGS. 4A to 5B are
sections which are respectively taken along a line IVA-IVA, a line
IVB-IVB, a line VA-VA, and a line VB-VB shown in FIG. 3. In FIGS.
4A to 5B, some insulating layers are omitted for simplicity of
illustration.
[0094] Initially, the configuration of the section of the memory
cell array 11 taken along the xz-plane will be described with
reference to FIGS. 4A and 4B.
[0095] As shown in FIGS. 4A and 4B, on the semiconductor substrate
30, the wiring layer 31 functioning as the source line SL(m-1) is
formed in the section taken along the line IVA-IVA, and the wiring
layer 31 functioning as the source line SLm is formed in the
section taken along the line IVB-IVB. The wiring layer 31 is
commonly connected to the one-side ends of the select transistors
ST of the plurality of memory cells MC arranged along the x-axis
direction.
[0096] The plurality of wiring layers 32 functioning as the word
lines WL(n-1), WLn, WL(n+1), and WL(n+2) is formed in the same
layer above the wiring layers 31 at equal intervals for every
distance d2. An insulating film (not shown) is formed between the
wiring layers 31 and 32, between the plurality of wiring layers 32,
and on top surfaces of the wiring layers 32.
[0097] First regions R1 are respectively formed in a plurality of
regions in which the select transistors ST are formed. The first
regions R1 are formed along the x-axis direction so as to be
separated from one another by the distance d2. The first regions R1
are in contact with one of the plurality of wiring layers 32, and
reach the wiring layers 31. An insulating layer 35 functioning as a
block insulating film is formed on side surfaces of the first
region R1. The selection element layer 34 including a semiconductor
layer is formed within the first region R1. The selection element
layer 34 includes a diffusion layer 41, a channel layer 42, and a
diffusion layer 43. For example, the diffusion layer 41, the
channel layer 42, and the diffusion layer 43 are sequentially
stacked on the wiring layer 31. The channel layer 42 is formed in
the same layer as that of the wiring layer 32. Accordingly, the
wiring layer 32 functions as the gate of the select transistor ST
formed within the first region R1 in contact with the wiring layer
32, and the channel layer 42 functions as a channel of the select
transistor ST. The diffusion layers 41 and 43 include carriers, and
function respectively as source and drain of the select transistor
ST. For example, the select transistor ST functions as a vertical
transistor including a current path along the z-axis direction.
[0098] Second regions R2 are respectively formed in a plurality of
regions in which the magnetic tunnel junction elements MTJ are
formed. The second regions R2 are formed along the x-axis direction
so as to be separated from one another by the distance d2. Each
second region R2 reaches a part of the upper end of the diffusion
layer 43. A conductive layer 44, the memory element layer 20, and a
conductive layer 45 are sequentially stacked within the second
region R2. The conductive layers 44 and 45 function as a lower
electrode and an upper electrode of the magnetic tunnel junction
element MTJ, respectively. Accordingly, a one-side end of the
magnetic tunnel junction element MTJ and the other-side end of the
select transistor ST are connected to each other.
[0099] In a layer on an upper end of the conductive layer 45, the
wiring layer 33 functioning as the bit line BL(m-1) is formed in
the section taken along the line IVA-IVA, and the wiring layer 33
functioning as the bit line BLm is formed in the section taken
along the line IVB-IVB. The wiring layer 33 is commonly connected
to the other-side ends of the magnetic tunnel junction elements MTJ
of the plurality of memory cells MC arranged along the x-axis
direction.
[0100] The second region R2 is formed so as to be offset from the
first region R1 in the x-axis direction while maintaining a state
in which the conductive layer 44 is electrically connected to the
diffusion layer 43. Specifically, the second region R2 is formed so
as to be offset from the first region R1 in the -x-axis direction
in the section taken along the line IVA-IVA, and is formed as to be
offset from the first region R1 in the +x-axis direction in the
section taken along the line IVB-IVB. The second region R2 in the
section taken along the line IVA-IVA and the second region R2 in
the section taken along the line IVB-IVB are formed so as to be
offset from each other along the x-axis direction by the distance
d2/2.
[0101] Hereinafter, the configuration of the section of the memory
cell array 11 taken along the yz-plane will be described with
reference to FIGS. 5A and 5B.
[0102] As shown in FIGS. 5A and 5B, the plurality of wiring layers
31 functioning as the plurality of source lines SL(m+2), SL(m+1),
SLm, and SL(m-1) is formed on the semiconductor substrate 30 at
equal intervals for every distance d1. The wiring layer 32
functioning as the word line WL(n-1) is formed above the wiring
layer 31.
[0103] The first regions R1 are formed along the y-axis direction
so as to be separated from one another by the distance d1. A center
of a width of the first region R1 along the y-axis direction
matches a center of a width of the wiring layer 31 formed
immediately under the first region R1 along the y-axis direction.
The select transistor ST having the same configuration as that of
the select transistor ST described in FIGS. 4A and 4B is formed in
the first region R1. The plurality of select transistors ST formed
along the y-axis direction is commonly connected to the same wiring
layer 32.
[0104] The second regions R2 are formed along the y-axis direction
so as to be separated from one another by the distance 2d1.
Specifically, the second regions R2 are formed above the wiring
layers 31 functioning as the source lines SL(m+2) and SLm in the
section taken along the line VA-VA. The second regions R2 are
formed above the wiring layers 31 functioning as the source lines
SL(m+1) and SL(m-1) in the section taken along the line VB-VB. The
second regions R2 in the section taken along the line VA-VA and the
second regions R2 in the section taken along the line VB-VB are
formed along the y-axis direction so as to be separated from each
other by the distance d1. A center of a width of the second region
R2 along the y-axis direction matches centers of widths of the
first region R1 formed immediately under the second region R2 and
the wiring layer 31 along the y-axis direction. The magnetic tunnel
junction element MTJ having the same configuration as that of the
magnetic tunnel junction element MTJ described in FIGS. 4A and 4B
is formed in the second region R2.
[0105] The plurality of wiring layers 33 functioning as the bit
lines BL(m+2), BL(m+1), BLm, and BL(m-1) is formed in the layer on
the upper end of the conductive layer 45 at equal intervals for
every distance d1. The wiring layers 33 functioning as the bit
lines BL(m+2) and BLm are respectively connected to the conductive
layers 45 in the section taken along the line VA-VA, and the wiring
layers 33 functioning as the bit lines BL(m+1) and BL(m-1) are
connected to the conductive layers 45 in the section taken along
the line VB-VB. A center of a width of the wiring layer 33 along
the y-axis direction matches centers of widths of the second region
R2, the first region R1, and the wiring layer 31 formed immediately
under the wiring layer 33 along the y-axis direction.
1.2 Advantage According to Present Embodiment
[0106] According to the first embodiment, it is possible to set the
distances between the adjacent memory elements to be at equal
intervals while reducing a cell size. The present advantage will be
described below.
[0107] The select transistor ST of the semiconductor storage device
according to the first embodiment is the vertical transistor.
Specifically, the select transistor ST is configured such that the
diffusion layer 41, the channel layer 42, and the diffusion layer
43 are sequentially stacked along the z-axis direction. The wiring
layer 32 is formed in the same layer as that of the channel layer
42. Accordingly, the wiring layer 32 is formed between the wiring
layers 31 and 33. In other words, the wiring layer 32 is formed
above the wiring layer 31 and under the wiring layer 33. Thus, the
current path of the select transistor ST does not follow the
xy-plane and can follow the z-axis direction, unlike a planar
transistor. With the select transistor ST having a vertical
configuration, the memory cell array 11 can be formed with a size
(for example, 4F2 size) that is denser than a size (for example,
6F2 size) of the memory cell using the planar transistor.
[0108] The magnetic tunnel junction elements MTJ are arranged in
the vertices and the center of the regular hexagon in the xy-plane.
Specifically, the magnetic tunnel junction elements MTJ which
correspond to the combination of the same bit line BL and the same
source line SL and are adjacent to each other are separated from
each other along the x-axis direction by the distance d2. The
magnetic tunnel junction elements MTJ which correspond to the same
word line WL and are adjacent to each other are separated from each
other along the y-axis direction by the distance d1. The magnetic
tunnel junction elements MTJ which correspond to the combination of
the bit line BL and the source line SL in the m-th row and
correspond to the n-th-column word line WL and the magnetic tunnel
junction elements MTJ which correspond to the combination of the
bit line BL and the source line SL in the (m+1)-th row and
correspond to the n-th-column word line WL are separated from each
other along the x-axis direction by the distance d2/2. Accordingly,
it is possible to set the distances between all the magnetic tunnel
junction elements MTJ adjacent to each other to be equal.
[0109] For example, an area necessary to arrange a certain number
of memory cells MC according to the present embodiment is about
0.87 times of an area necessary when the memory cells are arranged
in the rectangular grid. Thus, it is possible to acquire a memory
cell array having a smaller area. When the arrangement of the
memory cells MC according to the present embodiment is applied to
the same area as that of the memory cells arranged in the
rectangular grid, it is possible to arrange the same number of
memory cells MC in wider intervals. Accordingly, it is possible to
arrange the memory cells in a shape in which interference between
the memory cells MC is reduced.
1.3 Modification Example of First Embodiment
[0110] Although the semiconductor storage device according to the
first embodiment in which the magnetic tunnel junction element MTJ
is formed above the select transistor ST is described, the present
embodiment is not limited thereto. For example, the magnetic tunnel
junction element MTJ may be formed under the select transistor
ST.
[0111] FIGS. 6A to 7B are examples of sectional views of a stacked
structure of a memory cell array of a semiconductor storage device
according to a modification example of the first embodiment, which
are taken along the xz-plane and the yz-plane. Specifically, FIGS.
6A to 7B show sections which are respectively taken along the line
IVA-IVA, the line IVB-IVB, the line VA-VA, and the line VB-VB shown
in FIG. 3, and correspond to FIGS. 4A to 5B.
[0112] As shown in FIGS. 6A to 7B, the magnetic tunnel junction
element MTJ is formed on the wiring layer 31, the select transistor
ST is formed on the magnetic tunnel junction element MTJ, and the
wiring layer 33 is formed on the select transistor ST.
[0113] The magnetic tunnel junction element MTJ and the select
transistor ST shown in FIGS. 6A to 7B are merely substituted for
the magnetic tunnel junction element MTJ and the select transistor
ST shown in FIGS. 4A to 5B in the z-axis direction, and the
positional relation therebetween in the xy-plane is not
changed.
[0114] With such a configuration, even when the select transistor
ST is formed on the magnetic tunnel junction element MTJ, it is
possible to acquire the same advantage as that of the first
embodiment.
2. Second Embodiment
[0115] Hereinafter, a semiconductor storage device according to a
second embodiment will be described. The magnetic tunnel junction
element is offset from the select transistor along the x-axis
direction in the first embodiment, whereas the magnetic tunnel
junction element is offset from the select transistor along the
y-axis direction in the second embodiment. Hereinafter, differences
from the first embodiment will be described.
2.1 Stacked Structure of Memory Cell Array
[0116] A stacked structure of a memory cell array of the
semiconductor storage device according to a second embodiment will
be described below.
[0117] Initially, a layout of the memory cell array 11 in the
xy-plane will be described with reference to FIG. 8. FIG. 8 is a
top view of the memory cell array 11 of the semiconductor storage
device according to the second embodiment when viewed in the
+z-axis direction.
[0118] As shown in FIG. 8, two wiring layers 31 adjacent to each
other are separated from each other along the y-axis direction by
the distance d2. Two wiring layers 32 adjacent to each other are
separated from each other along the x-axis direction by the
distance d1. Two wiring layers 33 adjacent to each other are
separated from each other along the y-axis direction by the
distance d2. In the example of FIG. 8, a center of a width of the
wiring layer 33 along the y-axis direction matches, for example, a
center of a width of the wiring layer 31 along the y-axis direction
in the xy-plane, and the present embodiment is not limited
thereto.
[0119] Selection element layers 34 are arranged in a rectangular
grid in the xy-plane. Specifically, the selection element layers 34
are arranged, for example, along the x-axis direction at equal
intervals for every distance d1, and are arranged along the y-axis
direction at equal intervals for every distance d2.
[0120] Memory element layers 20 are disposed in a honeycomb shape
in the xy-plane. Specifically, the memory element layers 20 are
arranged in a position of vertices and a center of a regular
hexagon of which a length of one side is the distance d2 in the
xy-plane. More specifically, the memory element layers 20 are
arranged along the y-axis direction at equal intervals for every
distance d2, and are arranged along the x-axis direction at equal
intervals for every distance 2d1. That is, an (n-1)-th-column
memory element layer 20 and an (n+1)-th-column memory element layer
20 are aligned in the x-axis direction. An n-th-column memory
element layer 20 and an (n+2)-th-column memory element layer 20 are
aligned in the x-axis direction. However, the n-th-column memory
element layer 20, and the (n-1)-th-column memory element layer 20
are not aligned in the x-axis direction, and the n-th-column memory
element layer 20 and the (n+1)-th-column memory element layer 20
are not aligned in the x-axis direction.
[0121] In the example of FIG. 8, a center of the n-th-column memory
element layer 20 is located in a position, which is offset from a
center of a width of the combination of the corresponding wiring
layers 31 and 33 along the y-axis direction, in the -y-axis
direction. Centers of the (n-1)-th-column and (n+1)-th-column
memory element layers 20 are located in positions, which are offset
from a center of a width of the combination of the corresponding
wiring layers 31 and 33 along the y-axis direction, in the +y-axis
direction. As a result, the center of the n-th-column memory
element layer 20 is located in a position offset from the centers
of the (n-1)-th-column and (n+1)-th-column memory element layers
20, along the y-axis direction by the distance d2/2.
[0122] The memory element layers are arranged in this manner, and
thus, an arbitrary memory element layer 20 is disposed with equal
distances from six memory element layers 20 adjacent to the
arbitrary memory element layer 20 in the xy-plane. Specifically,
for example, six memory element layers 20(m-1, n), 20(m+1, n),
20(m, n-1), 20(m+1, n-1), 20(m, n+1), and 20(m+1, n+1), n+1)
adjacent to a memory element layer 20(m, n) are arranged in the
vertices of the regular hexagon of which one side is the distance
d2, and the memory element layer 20(m, n) is disposed in the center
of the regular hexagon. As another example, six memory element
layers 20(m-1, n+1), 20(m+1, n+1), 20(m-1, n), 20(m, n), 20(m-1,
n+2), and 20(m, n+2) adjacent to the memory element layer 20(m,
n+1) are arranged in the vertices of the regular hexagon of which
one side is the distance d2, and the memory element layer 20(m,
n+1) is disposed in the center of the regular hexagon.
[0123] Hereinafter, configurations of sections of the memory cell
array 11 described in FIG. 8 which are taken along the xz-plane and
the yz-plane will be described with reference to FIGS. 9A to 10B.
FIGS. 9A to 10B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the second embodiment, which are taken along
the xz-plane and the yz-plane. Specifically, FIGS. 9A to 10B show
sections taken along a line IXA-IXA, a line IXB-IXB, a line XA-XA,
and a line XB-XB shown in FIG. 8. In the following description,
differences between FIGS. 9A to 10B and FIGS. 4A to 5B will be
described.
[0124] Initially, the configuration of the section of the memory
cell array 11 taken along the xz-plane will be described with
reference to FIGS. 9A and 9B.
[0125] As shown in FIGS. 9A and 9B, the plurality of wiring layers
32 functioning as the word lines WL(n-1), WLn, WL(n+1), and WL(n+2)
is formed in the same layer above the wiring layer 31 at equal
intervals for every distance d1.
[0126] First regions R1 are formed along the x-axis direction so as
to be separated from one another by the distance d1. The first
regions R1 are in contact with one of the plurality of wiring
layers 32, and reach the wiring layers 31. The select transistor ST
having the same configuration as that of the select transistor ST
described in the above-described embodiment is formed in the first
region R1.
[0127] Second regions R2 are formed along the x-axis direction so
as to be separated from each other by the distance 2d1.
Specifically, the second regions R2 are formed above the wiring
layers 32 functioning as the word lines WL(n-1) and WL(n+1) in the
section taken along the line IXA-IXA. The second regions R2 are
formed above the wiring layers 32 functioning as the word lines WLn
and WL(n+2) in the section taken along the line IXB-IXB. The second
region R2 in the section taken along the line IXA-IXA and the
second region R2 in the section taken along the line IXB-IXB are
formed along the x-axis direction so as to be separated from each
other by the distance d1. A center of a width of the second region
R2 along the x-axis direction matches a center of a width of the
first region R1 formed immediately under the second region R2 along
the x-axis direction. The magnetic tunnel junction element MTJ
having the same configuration as that of the magnetic tunnel
junction element MTJ described in the above-described embodiment is
formed in the second region R2.
[0128] Hereinafter, the configuration of the section of the memory
cell array 11 taken along the yz-plane will be described with
reference to FIGS. 10A and 10B.
[0129] As shown in FIGS. 10A and 10B, the plurality of wiring
layers 31 functioning as the plurality of source lines SL(m+2),
SL(m+1), SLm, and SL(m-1) is formed on the semiconductor substrate
30 at equal intervals for every distance d2. Above the wiring layer
31, the wiring layer 32 functioning as the word line WL(n-1) is
formed in the section taken along the line XA-XA, and the wiring
layer 32 functioning as the word line WLn in the section taken
along the line XB-XB.
[0130] The first regions R1 are formed along the y-axis direction
so as to be separated from one another by the distance d2. A center
of a width of the first region R1 along the y-axis direction
matches a center of a width of the wiring layer 31 formed
immediately under the first region R1 along the y-axis direction.
The select transistor ST having the same configuration as that of
the select transistor ST described in the above-described
embodiment is formed in the first region R1.
[0131] The second regions R2 are formed along the y-axis direction
so as to be separated from one another by the distance d2. The
second region R2 is formed so as to be offset from the first region
R1 in the y-axis direction while maintaining a state in which the
conductive layer 44 is electrically connected to the diffusion
layer 43. Specifically, the second region R2 is formed so as to be
offset from the first region R1 in the +y-axis direction in the
section taken along the line XA-XA, and is formed so as to be
offset from the first region R1 in the -y-axis direction in the
section taken along the line XB-XB. The second region R2 in the
section taken along the line XA-XA and the second region R2 in the
section taken along the line XB-XB are formed along the x-axis
direction so as to be offset from each other along the x-axis
direction by the distance d2/2. The magnetic tunnel junction
element MTJ having the same configuration as that of the magnetic
tunnel junction element MTJ described in the above-described
embodiment is formed in the second region R2.
[0132] The plurality of wiring layers 33 functioning as the bit
lines BL(m+2), BL(m+1), BLm, and BL(m-1) is formed on an upper end
of the conductive layer 45 at equal intervals by the distance d2. A
center of a width of the wiring layer 33 along the y-axis direction
matches centers of widths of the first region R1 and the wiring
layer 31 formed immediately under the wiring layer 33 along the
y-axis direction.
2.2 Advantage According to Present Embodiment
[0133] According to the second embodiment, the magnetic tunnel
junction elements MTJ are disposed in the vertices and the center
of the regular hexagon in the xy-plane. Specifically, the magnetic
tunnel junction elements MTJ which correspond to the same word line
WL and are adjacent to each other are separated from each other
along the y-axis direction by the distance d2. The magnetic tunnel
junction elements MTJ which correspond to the combination of the
same bit line BL and the same source line SL and are adjacent to
each other are separated from each other along the x-axis direction
by the distance d1. The magnetic tunnel junction elements MTJ which
correspond to the combination of the bit line BL and the source
line SL in the m-th row and correspond to the n-th-column word line
WL and the magnetic tunnel junction elements MTJ which correspond
to the combination of the bit line BL and the source line SL in the
m-th row and correspond to the (n+1)-th-column word line WL are
separated from each other along the y-axis direction by the
distance d2/2. Accordingly, it is possible to set the distances
between all the magnetic tunnel junction elements MTJ adjacent to
each other to be equal. Thus, a manufacturing fluctuation in a
manufacturing stage can be reduced in the embodiment compared to
the arrangement in which the distances between all the magnetic
tunnel junction elements adjacent to each other are not equal, such
as in the case of the memory cells arranged in the rectangular
grid.
[0134] In addition, according to the second embodiment, it is
possible to similarly acquire other advantages mentioned in the
first embodiment.
2.3 Modification Example of Second Embodiment
[0135] Although the semiconductor storage device according to the
second embodiment in which the magnetic tunnel junction element MTJ
is formed above the select transistor ST is described, the present
embodiment is not limited thereto. For example, the magnetic tunnel
junction element MTJ may be formed under the select transistor
ST.
[0136] FIGS. 11A to 12B are examples of sectional views of a
stacked structure of a memory cell array of a semiconductor storage
device according to a modification example of the second
embodiment, which are taken along the xz-plane and the yz-plane.
Specifically, FIGS. 11A to 12B show sections taken along the line
IXA-IXA, the line IXB-IXB, the line XA-XA, and the line XB-XB shown
in FIG. 8, and correspond to FIGS. 9A to 10B.
[0137] As shown in FIGS. 11A to 12B, the magnetic tunnel junction
element MTJ is formed on the wiring layer 31, the select transistor
ST is formed on the magnetic tunnel junction element MTJ, and the
wiring layer 33 is formed on the select transistor ST.
[0138] The magnetic tunnel junction element MTJ and the select
transistor ST shown in FIGS. 11A to 12B are merely substituted for
the magnetic tunnel junction element MTJ and the select transistor
ST shown in FIGS. 9A to 10B in the z-axis direction, and the
positional relation therebetween in the xy-plane is not
changed.
[0139] With such a configuration, even when the select transistor
ST is formed on the magnetic tunnel junction element MTJ, it is
possible to acquire the same advantage as that of the second
embodiment.
3. Third Embodiment
[0140] Hereinafter, a semiconductor storage device according to a
third embodiment will be described. The select transistors are
arranged in the rectangular grid in the first embodiment and the
second embodiment, whereas the select transistors are arranged in a
honeycomb shape in the third embodiment. In the third embodiment,
the select transistors are arranged similarly to the arrangement of
the magnetic tunnel junction elements described in the first
embodiment. That is, in the third embodiment, a center of the
select transistor in the xy-plane matches a center of the magnetic
tunnel junction element. Hereinafter, differences from the first
embodiment will be described.
3.1 Stacked Structure of Memory Cell Array
[0141] A stacked structure of a memory cell array of a
semiconductor storage device according to the third embodiment will
be described below.
[0142] Initially, a layout of the memory cell array 11 in the
xy-plane will be described with reference to FIG. 13. FIG. 13 is a
top view of the memory cell array 11 of the semiconductor storage
device according to the third embodiment when viewed in the +z-axis
direction.
[0143] As shown in FIG. 13, the arrangement of the wiring layers 31
to 33 and the memory element layers 20 is the same as that of the
first embodiment, and thus, the description is omitted.
[0144] The selection element layers 34 are arranged in the
honeycomb shape in the xy-plane. Specifically, the selection
element layers 34 are arranged in vertices and a center of a
regular hexagon of which a length of one side is the distance d2 in
the xy-plane. More specifically, the selection element layers 34
are arranged along the x-axis direction at equal intervals for
every distance d2, and are arranged along the y-axis direction at
equal intervals for every distance 2d1. That is, an (m-1)-th-row
selection element layer 34 and an (m+1)-th-row selection element
layer 34 are aligned in the y-axis direction. An m-th-row selection
element layer 34 and an (m+2)-th-row selection element layer 34 are
aligned in the y-axis direction. However, the m-th-row selection
element layer 34 and the (m-1)-th-row selection element layer 34,
and the m-th-row selection element layer 34 and the (m+1)-th-row
selection element layer 34 are not aligned in the y-axis
direction.
[0145] In the example of FIG. 13, a center of the m-th-row
selection element layer 34 is disposed so as to match a center of
the memory element layer 20 in the xy-plane. That is, a center of
the m-th-row selection element layer 34 is located in a position
offset from centers of the (m-1)-th-row and (m+1)-th-row selection
element layers 34 along the x-axis direction by the distance
d2/2.
[0146] The selection element layers are arranged in this manner,
and thus, an arbitrary selection element layer 34 is disposed with
equal distances from six selection element layers 34 adjacent to
the arbitrary selection element layer 34 in the xy-plane.
Specifically, for example, six selection element layers 34(m, n-1),
34(m, n+1), 34(m-1, n), 34(m-1, n+1), 34(m+1, n), and 34(m+1, n+1)
adjacent to the selection element layer 34(m, n) are arranged in
the vertices of the regular hexagon of which one side is the
distance d2, and the selection element layer 34(m, n) is disposed
in the center of the regular hexagon. As another example, six
selection element layers 34(m+1, n-1), 34(m+1, n+1), 34(m, n-1),
34(m, n), 34(m+2, n-1), and 34(m+2, n) adjacent to the selection
element layer 34(m+1, n) are arranged in the vertices of the
regular hexagon of which one side is the distance d2, and the
selection element layer 34(m+1, n) is disposed in the center of the
regular hexagon.
[0147] Hereinafter, configurations of sections of the memory cell
array 11 described in FIG. 13 which are taken along the xz-plane
and the yz-plane will be described with reference to FIGS. 14A to
15B. FIGS. 14A to 15B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the third embodiment, which are taken along the
xz-plane and the yz-plane. Specifically, FIGS. 14A to 15B show
sections taken along a line XIVA-XIVA, a line XIVB-XIVB, a line
XVA-XVA, and a line XVB-XVB shown in FIG. 13. In the following
description, differences between FIGS. 14A to 15B and FIGS. 4A to
5B will be described.
[0148] Initially, the configuration of the section of the memory
cell array 11 taken along the xz-plane will be described with
reference to FIGS. 14A and 14B.
[0149] As shown in FIGS. 14A and 14B, the first region R1 is formed
so as to be in contact with a part of the wiring layer 32.
Specifically, the first region R1 is in contact with a part of the
wiring layer 32 on the -x-axis in the section taken along the line
XIVA-XIVA, and is in contact with a part of the wiring layer 32 on
the +x-axis in the section taken along the line XIVB-XIVB. A center
of a width of the first region R1 along the x-axis direction
matches a center of a width of the second region R2 formed
immediately above the first region R1 along the x-axis
direction.
[0150] That is, the combination of the first region R1 and the
second region R2 is formed so as to be offset from the wiring layer
32 in the -x-axis direction in the section taken along the line
XIVA-XIVA, and is formed so as to be offset from the wiring layer
32 in the +x-axis direction in the section taken along the line
XIVB-XIVB. The combination of the first region R1 and the second
region R2 in the section taken along the line XIVA-XIVA and the
combination of the first region R1 and the second region R2 in the
section taken along the line XIVB-XIVB are formed so as to be
offset from each other along the x-axis direction by the distance
d2/2.
[0151] Hereinafter, the configuration of the section of the memory
cell array 11 taken along the yz-plane will be described with
reference to FIGS. 15A and 15B.
[0152] As shown in FIGS. 15A and 15B, the first regions R1 are
formed along the y-axis direction so as to be separated from one
another by the distance 2d1. Specifically, the first regions R1 are
formed above the wiring layers 31 functioning as the source lines
SL(m+2) and SLm in the section taken along the line XVA-XVA. The
first regions R1 are formed above the wiring layers 31 functioning
as the source lines SL(m+1) and SL(m-1) in the section taken along
the line XVB-XVB. The first region R1 in the section taken along
the line XVA-XVA and the first region R1 in the section taken along
the line XVB-XVB are formed along the y-axis direction so as to be
separated from each other by the distance d1.
3.2 Advantage According to Present Embodiment
[0153] According to the third embodiment, the select transistors ST
are disposed in the vertices and the center of the regular hexagon
in the xy-plane. Specifically, the select transistors ST which
correspond to the combination of the same bit line BL and the same
source line SL and are adjacent to each other are separated from
each other along the x-axis direction by the distance d2. The
select transistors ST which correspond to the same word line WL and
are adjacent to each other are separated from each other along the
y-axis direction by the distance d1. The select transistors ST
which correspond to the combination of the bit line BL and the
source line SL in the m-th row and correspond to the n-th-column
word line WL and the select transistors ST which correspond to the
combination of the bit line BL and the source line SL in the
(m+1)-th row and correspond to the n-th-column word line WL are
separated from each other along the x-axis direction by the
distance d2/2. Accordingly, it is possible to set the distances
between all the select transistors ST adjacent to each other to be
equal. Thus, it is possible to reduce a manufacturing fluctuation
in a manufacturing stage.
[0154] A center of the select transistor ST matches a center of the
magnetic tunnel junction element MTJ in the xy-plane. Accordingly,
it is possible to increase a contact area between the select
transistor ST and the magnetic tunnel junction element MTJ. It is
possible to further reduce an area occupied by the memory cell in
the xy-plane.
[0155] In addition, according to the third embodiment, it is
possible to similarly acquire other advantages mentioned in the
first embodiment.
3.3 Modification Example of Third Embodiment
[0156] Although the semiconductor storage device according to the
third embodiment in which the magnetic tunnel junction element MTJ
is formed above the select transistor ST is described, the present
embodiment is not limited thereto. For example, the magnetic tunnel
junction element MTJ may be formed under the select transistor
ST.
[0157] FIGS. 16A to 17B are examples of sectional views of a
stacked structure of a memory cell array of a semiconductor storage
device according to a modification example of the third embodiment,
which are taken along the xz-plane and the yz-plane. Specifically,
FIGS. 16A to 17B show sections taken along the line XIVA-XIVA, the
line XIVB-XIVB, the line XVA-XVA, and the line XVB-XVB shown in
FIG. 13, and correspond to FIGS. 14A to 15B.
[0158] As shown in FIGS. 16A to 17B, the magnetic tunnel junction
element MTJ is formed on the wiring layer 31, the select transistor
ST is formed on the magnetic tunnel junction element MTJ, and the
wiring layer 33 is formed on the select transistor ST.
[0159] The magnetic tunnel junction element MTJ and the select
transistor ST shown in FIGS. 16A to 17B are merely substituted for
the magnetic tunnel junction element MTJ and the select transistor
ST shown in FIGS. 14A to 15B in the z-axis direction, and the
positional relation therebetween in the xy-plane is not
changed.
[0160] With such a configuration, even when the select transistor
ST is formed on the magnetic tunnel junction element MTJ, it is
possible to acquire the same advantage as that of the third
embodiment.
4. Fourth Embodiment
[0161] Hereinafter, a semiconductor storage device according to a
fourth embodiment will be described. In the fourth embodiment, the
fourth embodiment is different from the first embodiment and the
second embodiment in that the select transistors are arranged in
the honeycomb shape, similarly to the third embodiment. In the
fourth embodiment, the select transistors are arranged similarly to
the arrangement of the magnetic tunnel junction elements described
in the second embodiment. That is, in the fourth embodiment, the
select transistors are arranged together with the magnetic tunnel
junction elements along the y-axis direction, and a central
position of the select transistor matches a center of the magnetic
tunnel junction element in the xy-plane. Hereinafter, differences
from the second embodiment will be described.
4.1 Stacked Structure of Memory Cell Array
[0162] A stacked structure of a memory cell array of the
semiconductor storage device according to the fourth embodiment
will be described below.
[0163] Initially, a layout of the memory cell array 11 in the
xy-plane will be described with reference to FIG. 18. FIG. 18 is a
top view of the memory cell array 11 of the semiconductor storage
device according to the fourth embodiment when viewed in the
+z-axis direction.
[0164] As shown in FIG. 18, the arrangement of the wiring layers 31
to 33 and the memory element layers 20 is the same as that of the
second embodiment, and thus, the description is omitted.
[0165] The selection element layers 34 are arranged in the
honeycomb shape in the xy-plane. Specifically, the selection
element layers 34 are arranged in vertices and a center of a
regular hexagon of which a length of one side is the distance d2 in
the xy-plane. More specifically, the selection element layers 34
are arranged along the y-axis direction at equal intervals for
every distance d2, and are arranged along the x-axis direction at
equal intervals for every distance 2d1. That is, the
(n-1)-th-column selection element layer 34 and the (n+1)-th-column
selection element layer 34 are aligned in the x-axis direction. The
n-th-column selection element layer 34 and the (n+2)-th-column
selection element layer 34 are aligned in the x-axis direction.
However, the n-th-column selection element layer 34 and the
(n-1)-th-column selection element layer 34, and the n-th-column
selection element layer 34 and the (n+1)-th-column selection
element layer 34 are not aligned in the x-axis direction.
[0166] In the example of FIG. 18, a center of the selection element
layer 34 is disposed so as to match a center of the memory element
layer 20 in the xy-plane. That is, the center of the n-th-column
selection element layer 34 is located in a position offset from the
centers of the (n-1)-th-column and (n+1)-th-column selection
element layers 34, along the y-axis direction by the distance
d2/2.
[0167] The selection element layers are arranged in this manner,
and thus, an arbitrary selection element layer 34 is disposed with
equal distances from six selection element layers 34 adjacent to
the arbitrary selection element layer 34 in the xy-plane.
Specifically, for example, six selection element layers 34(m-1, n),
34(m+1, n), 34(m, n-1), 34(m+1, n-1), 34(m, n+1), and 34(m+1, n+1)
adjacent to the selection element layer 34(m, n) are arranged in
the vertices of the regular hexagon of which one side is the
distance d2, and the selection element layer 34(m, n) is disposed
in the center of the regular hexagon. As another example, six
selection element layers 34(m-1, n+1), 34(m+1, n+1), 34(m-1, n),
34(m, n), 34(m-1, n+2), and 34(m, n+2) adjacent to the selection
element layer 34(m, n+1) are arranged in the vertices of the
regular hexagon of which one side is the distance d2, and the
selection element layer 34(m, n+1) is disposed in the center of the
regular hexagon.
[0168] Hereinafter, configurations of sections of the memory cell
array 11 described in FIG. 18 which are taken along the xz-plane
and the yz-plane will be described with reference to FIGS. 19A to
20B. FIGS. 19A to 20B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the fourth embodiment, which are taken along
the xz-plane and the yz-plane. Specifically, FIGS. 19A to 20B show
sections taken along a line XIXA-XIXA, a line XIXB-XIXB, a line
XXA-XXA, and a line XXB-XXB shown in FIG. 18. In the following
description, differences between FIGS. 19A to 20B and FIGS. 9A to
10B will be described.
[0169] Initially, the configuration of the section of the memory
cell array 11 taken along the xz-plane will be described with
reference to FIGS. 19A and 19B.
[0170] As shown in FIGS. 19A and 19B, the first regions R1 are
formed so as to be in contact with the wiring layers 32 functioning
as the word lines WL(n-1) and WL(n+1) and reach the wiring layers
31 in the section taken along the line XIXA-XIXA. The first regions
R1 are formed so as to be in contact with the wiring layers 32
functioning as the word lines WLn and WL(n+2) and reach the wiring
layers 31 in the section taken along the line XIXB-XIXB. The first
region R1 in the section taken along the line XIXA-XIXA and the
first region R1 in the section taken along the line XIXB-XIXB are
formed along the x-axis direction so as to be separated from each
other by the distance d1.
[0171] Hereinafter, the configuration of the section of the memory
cell array 11 taken along the yz-plane will be described with
reference to FIGS. 20A and 20B.
[0172] As shown in FIGS. 20A and 20B, the first region R1 is formed
so as to reach a part of an upper end of the wiring layer 31.
Specifically, the first region R1 reaches a part of the wiring
layer 31 on the +y-axis in the section taken along the line
XXA-XXA, and reaches a part of the wiring layer 31 on the -y-axis
in the section taken along the line XXB-XXB. A center of a width of
the first region R1 along the y-axis direction matches a center of
a width of the second region R2 formed immediately above the first
region R1 along the y-axis direction.
[0173] That is, the combination of the first region R1 and the
second region R2 is formed so as to be offset from the wiring layer
31 in the +y-axis direction in the section taken along the line
XXA-XXA, and is formed so as to be offset from the wiring layer 31
in the -y-axis direction in the section taken along the line
XXB-XXB. The combination of the first region R1 and the second
region R2 in the section taken along the line XXA-XXA and the
combination of the first region R1 and the second region R2 in the
section taken along the line XXB-XXB are formed along the y-axis
direction so as to be offset from each other by the distance
d2/2.
4.2 Advantage According to Present Embodiment
[0174] According to the fourth embodiment, the select transistors
ST are disposed in the vertices and the center of the regular
hexagon in the xy-plane. Specifically, the select transistors ST
which correspond to the same word line WL and are adjacent to each
other are separated from each other along the y-axis direction by
the distance d2. The select transistors ST which correspond to the
combination of the same bit line BL and the same source line SL and
are adjacent to each other are separated from each other along the
x-axis direction by the distance d1. The select transistors ST
which correspond to the combination of the bit line BL and the
source line SL in the m-th row and correspond to the n-th-column
word line WL and the select transistors ST which correspond to the
combination of the bit line BL and the source line SL in the m-th
row and correspond to the (n+1)-th-column word line WL are
separated from each other along the y-axis direction by the
distance d2/2. Accordingly, it is possible to set the distances
between all the select transistors ST to be equal. Thus, it is
possible to reduce a manufacturing fluctuation in a manufacturing
stage.
[0175] A center of the select transistor ST matches a center of the
magnetic tunnel junction element MTJ in the xy-plane. Accordingly,
it is possible to increase a contact area between the select
transistor ST and the magnetic tunnel junction element MTJ. It is
possible to further reduce an area occupied by the memory cell in
the xy-plane.
[0176] In addition, according to the fourth embodiment, it is
possible to similarly acquire other advantages mentioned in the
second embodiment.
4.3 Modification Example of Fourth Embodiment
[0177] Although the semiconductor storage device according to the
fourth embodiment in which the magnetic tunnel junction element MTJ
is formed above the select transistor ST is described, the present
embodiment is not limited thereto. For example, the magnetic tunnel
junction element MTJ may be formed under the select transistor
ST.
[0178] FIGS. 21A to 22B are examples of sectional views of a
stacked structure of a memory cell array of a semiconductor storage
device according to a modification example of the fourth
embodiment, which are taken along the xz-plane and the yz-plane.
Specifically, FIGS. 21A to 22B show sections taken along the line
XIXA-XIXA, the line XIXB-XIXB, the line XXA-XXA, and the line
XXB-XXB shown in FIG. 18, and correspond to FIGS. 19A to 20B.
[0179] As shown in FIGS. 21A to 22B, the magnetic tunnel junction
element MTJ is formed on the wiring layer 31, the select transistor
ST is formed on the magnetic tunnel junction element MTJ, and the
wiring layer 33 is formed on the select transistor ST.
[0180] The magnetic tunnel junction element MTJ and the select
transistor ST shown in FIGS. 21A to 22B are merely substituted for
the magnetic tunnel junction element MTJ and the select transistor
ST shown in FIGS. 19A to 20B in the z-axis direction, and the
positional relation therebetween in the xy-plane is not
changed.
[0181] With such a configuration, even when the select transistor
ST is formed on the magnetic tunnel junction element MTJ, it is
possible to acquire the same advantage as that of the fourth
embodiment.
5. Fifth Embodiment
[0182] Hereinafter, a semiconductor storage device according to a
fifth embodiment will be described. In the third embodiment, the
select transistors are offset from the word lines in the same
direction as the magnetic tunnel junction elements, and thus, the
select transistors are arranged in the honeycomb shape. In
contrast, the fifth embodiment is different from the third
embodiment in that the select transistors are offset from the word
line in a direction opposite to a direction the magnetic tunnel
junction elements are offset, and thus, the select transistors are
arranged in the honeycomb shape. That is, in the fifth embodiment,
when the center of the magnetic tunnel junction element is offset
from the word line in the +x-axis direction, the center of the
select transistor is offset from the word line in the -x-axis
direction. When the center of the magnetic tunnel junction element
is offset from the word line in the -x-axis direction, the center
of the select transistor is offset from the word line in the
+x-axis direction. Hereinafter, differences from the third
embodiment will be described.
5.1 Stacked Structure of Memory Cell Array
[0183] A stacked structure of a memory cell array of the
semiconductor storage device according to the fifth embodiment will
be described below.
[0184] Initially, a layout of the memory cell array 11 in the
xy-plane will be described with reference to FIG. 23. FIG. 23 is a
top view of the memory cell array 11 of the semiconductor storage
device according to the fifth embodiment when viewed in the +z-axis
direction.
[0185] As shown in FIG. 23, the arrangement of the wiring layers 31
to 33 and the memory element layers 20 is the same as that of the
third embodiment, and thus, the description is omitted.
[0186] The selection element layers 34 are arranged in the
honeycomb shape in the xy-plane. Specifically, the center of the
selection element layer 34 is disposed so as to be offset from the
wiring layer 32 in a direction opposite to the direction in which
the center of the memory element layer 20 is offset from the wiring
layer in the xy-plane.
[0187] The selection element layers 34 are formed such that at
least some thereof overlap in regions occupied by the wiring layers
32. More specifically, the center of the m-th-row selection element
layer 34 is located in a position which is offset from the center
of the width of the corresponding wiring layer 32 along the x-axis
direction, in the -x-axis direction. The centers of the
(m-1)-th-row and (m+1)-th-row selection element layers 34 are
located in positions, which are offset from the center of the width
of the corresponding wiring layer 32 along the x-axis direction, in
the +x-axis direction. The center of the m-th-row selection element
layer 34 is located in a position, which is offset from the centers
of the (m-1)-th-row and (m+1)-th-row selection element layers 34,
along the x-axis direction by the distance d2/2.
[0188] The selection element layers are arranged in this manner,
and thus, an arbitrary selection element layer 34 is disposed with
equal distances from six selection element layers 34 adjacent to
the arbitrary selection element layer 34 in the xy-plane.
Specifically, for example, six selection element layers 34(m, n-1),
34(m, n+1), 34(m-1, n-1), 34(m-1, n), 34(m+1, n-1), and 34(m+1, n)
adjacent to the selection element layer 34(m, n) are arranged in
the vertices of the regular hexagon of which one side is the
distance d2, and the selection element layer 34(m, n) is disposed
in the center of the regular hexagon. As another example, six
selection element layers 34(m+1, n-1), 34(m+1, n+1), 34(m, n),
34(m, n+1), 34(i m+2, n), and 34(m+2, n+1) adjacent to the
selection element layer 34(m+1, n) are arranged in the vertices of
the regular hexagon of which one side is the distance d2, and the
selection element layer 34(m+1, n) is disposed in the center of the
regular hexagon.
[0189] In the example of FIG. 23, the memory element layer 20 and
the selection element layer 34 do not overlap and are separate from
each other in the xy-plane. Thus, an internal connection layer 36
is further formed between the memory element layer 20 and the
selection element layer 34 such that the memory element layer 20
and the selection element layer 34 are connected to each other. For
example, the internal connection layer 36 has an oval shape so as
to overlap both the memory element layer 20 and the selection
element layer 34 in the xy-plane.
[0190] Hereinafter, configurations of sections of the memory cell
array 11 described in FIG. 23 which are taken along the xz-plane
and the yz-plane will be described with reference to FIGS. 24A to
25B. FIGS. 24A to 25B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the fifth embodiment, which are taken along the
xz-plane and the yz-plane. Specifically, FIGS. 24A to 25B show
sections taken along a line XXIVA-XXIVA, a line XXIVB-XXIVB, a line
XXVA-XXVA, and a line XXVB-XXVB shown in FIG. 23. In the following
description, differences between FIGS. 24A to 25B and FIGS. 14A to
15B will be described.
[0191] Initially, the configuration of the section of the memory
cell array 11 taken along the xz-plane will be described with
reference to FIGS. 24A and 24B.
[0192] As shown in FIGS. 24A and 24B, the first region R1 is formed
so as to be in contact with a part of the wiring layer 32.
Specifically, the first region R1 is in contact with a part of the
wiring layer 32 on the +x-axis in the section taken along the line
XXIVA-XXIVA, and is in contact with a part of the wiring layer 32
on the -x-axis in the section taken along the XXIVB-XXIVB. A center
of a width of the first region R1 along the x-axis direction is
different from a center of a width of the second region R2 formed
immediately above the first region R1 along the x-axis
direction.
[0193] That is, in the section taken along the line XXIVA-XXIVA,
the second region R2 is formed so as to be offset from the wiring
layer 32 in the -x-axis direction, and the first region R1 is
formed so as to be offset from the wiring layer 32 in the +x-axis
direction. In the section taken along the line XXIVB-XXIVB, the
second region R2 is formed so as to be offset from the wiring layer
32 in the +x-axis direction, and the first region R1 is formed so
as to be offset from the wiring layer 32 in the -x-axis direction.
The first region R1 and the second region R2 in the section taken
along the line XXIVA-XXIVA and the first region R1 and the second
region R2 in the section taken along the line XXIVB-XXIVB are
formed so as to be offset from each other along the x-axis
direction by the distance d2/2.
[0194] The internal connection layer 36 is formed on an upper end
of the diffusion layer 43. The internal connection layer 36 further
extends toward the -x-axis direction than the first region R1 in
the section taken along the line XXIVA-XXIVA, and further extends
toward the +x-axis direction than the first region R1 in the
section taken along the line XXIVB-XXIVB. The second region R2 is
formed on an upper end of the internal connection layer 36.
[0195] Hereinafter, the configuration of the section of the memory
cell array 11 taken along the yz-plane will be described with
reference to FIGS. 25A and 25B.
[0196] As shown in FIGS. 25A and 25B, the first regions R1 are
formed along the y-axis direction so as to be separated from one
another by the distance 2d1. Specifically, the first regions R1 are
formed on the wiring layers 31 functioning as the source lines
SL(m+1) and SL(m-1) in the section taken along the line XXVA-XXVA.
The first regions R1 are formed above the wiring layers 31
functioning as the source lines SL(m+2) and SLm in the section
taken along the line XXVB-XXVB. The first region R1 in the section
taken along the line XXVA-XXVA and the first region R1 in the
section taken along the line XXVB-XXVB are formed along the y-axis
direction so as to be separated from each other by the distance
d1.
[0197] The internal connection layer 36 is located in an upper end
of the diffusion layer 43 and a lower end of the conductive layer
44. For example, a center of the internal connection layer 36 along
the y-axis direction matches centers of widths of the first region
R1 and the second region R2 along the y-axis direction.
5.2 Advantage According to Present Embodiment
[0198] According to the fifth embodiment, when the magnetic tunnel
junction element MTJ is offset from the center of the width of the
corresponding word line WL along the x-axis direction in the
+x-axis direction, the select transistor ST is offset from the
center of the width of the corresponding word line WL along the
x-axis direction in the -x-axis direction. When the magnetic tunnel
junction element MTJ is offset from the center of the width of the
corresponding word line WL along the x-axis direction in the
-x-axis direction, the select transistor ST is offset from the
center of the width of the corresponding word line WL along the
x-axis direction in the +x-axis direction. The select transistors
ST are disposed in the vertices and the center of the regular
hexagon in the xy-plane. Accordingly, the select transistor ST does
not overlap the magnetic tunnel junction element MTJ in the
xy-plane. Thus, it is possible to form the magnetic tunnel junction
element MTJ on a base portion in which the select transistor ST is
not present. Accordingly, it is possible to reduce a characteristic
fluctuation of the magnetic tunnel junction element MTJ in
manufacturing the magnetic tunnel junction element.
[0199] The internal connection layer 36 is formed between the
select transistor ST and the magnetic tunnel junction element MTJ.
The internal connection layer 36 overlaps both the select
transistor ST and the magnetic tunnel junction element MTJ in the
xy-plane. Accordingly, it is possible to connect the select
transistor ST and the magnetic tunnel junction element MTJ.
[0200] In addition, according to the fifth embodiment, it is
possible to similarly acquire other advantages mentioned in the
third embodiment.
5.3 Modification Example of Fifth Embodiment
[0201] Although the semiconductor storage device according to the
fifth embodiment in which the magnetic tunnel junction element MTJ
is formed above the select transistor ST is described, the present
embodiment is not limited thereto. For example, the magnetic tunnel
junction element MTJ may be formed under the select transistor
ST.
[0202] FIGS. 26A to 27B are examples of sectional views of a
stacked structure of a memory cell array of a semiconductor storage
device according to a modification example of the fifth embodiment,
which are taken along the xz-plane and the yz-plane. Specifically,
FIGS. 26A to 27B show sections taken along the line XXIVA-XXIVA,
the line XXIVB-XXIVB, the line XXVA-XXVA, and the line XXVB-XXVB
shown in FIG. 23, and correspond to FIGS. 24A to 25B.
[0203] As shown in FIGS. 26A to 27B, the magnetic tunnel junction
element MTJ is formed on the wiring layer 31, the select transistor
ST is formed on the magnetic tunnel junction element MTJ, and the
wiring layer 33 is formed on the select transistor ST.
[0204] The magnetic tunnel junction element MTJ and the select
transistor ST shown in FIGS. 26A to 27B are merely substituted for
the magnetic tunnel junction element MTJ and the select transistor
ST shown in FIGS. 24A to 25B in the z-axis direction, and the
positional relation therebetween in the xy-plane is not
changed.
[0205] With such a configuration, even when the select transistor
ST is formed on the magnetic tunnel junction element MTJ, it is
possible to acquire the same advantage as that of the fifth
embodiment.
6. Sixth Embodiment
[0206] Hereinafter, a semiconductor storage device according to a
sixth embodiment will be described. In the fourth embodiment, the
select transistors are offset from the bit line and the source line
in the same direction with the magnetic tunnel junction elements,
and thus, the select transistors are arranged in the honeycomb
shape. In contrast, the sixth embodiment is different from the
fourth embodiment in that the select transistors are offset from
the bit line and the source line in a direction opposite to a
direction the magnetic tunnel junction elements are offset, and
thus, the select transistors are arranged in the honeycomb shape.
That is, in the sixth embodiment, when the center of the magnetic
tunnel junction element is offset from the bit line and the source
line in the +y-axis direction, the center of the select transistor
is offset from the bit line and the source line in the -y-axis
direction. When the center of the magnetic tunnel junction element
is offset from the bit line and the source line in the -y-axis
direction, the center of the select transistor is offset from the
bit line and the source line in the +y-axis direction. Hereinafter,
differences from the fourth embodiment will be described.
6.1 Stacked Structure of Memory Cell Array
[0207] A stacked structure of a memory cell array of the
semiconductor storage device according to the sixth embodiment will
be described below.
[0208] Initially, a layout of the memory cell array 11 in the
xy-plane will be described with reference to FIG. 28. FIG. 28 is a
top view of the memory cell array 11 of the semiconductor storage
device according to the sixth embodiment when viewed in the +z-axis
direction.
[0209] As shown in FIG. 28, the arrangement of the wiring layers 31
to 33 and the memory element layers 20 is the same as that of the
fourth embodiment, and thus, the description is omitted.
[0210] The selection element layers 34 are arranged in the
honeycomb shape in the xy-plane. Specifically, the center of the
selection element layer 34 is disposed so as to be offset from the
wiring layers 31 and 33 in a direction opposite to the direction in
which the center of the memory element layer 20 is offset from the
wiring layers in the xy-plane.
[0211] In FIG. 28, the selection element layers 34 are formed such
that at least some thereof overlap in regions occupied by the
wiring layers 31 and 33. More specifically, the center of the
n-th-column selection element layer 34 is located in a position,
which is offset from the centers of the widths of the corresponding
wiring layers 31 and 33 along the y-axis direction, in the +y-axis
direction. The centers of the (n-1)-th-column and (n+1)-th-column
selection element layers 34 are located in positions, which are
offset from the centers of the widths of the corresponding wiring
layers 31 and 33 along the y-axis direction, in the -y-axis
direction. The center of the n-th-column selection element layer 34
is located in a position offset from the centers of the
(n-1)-th-column and (n+1)-th-column selection element layers 34,
along the y-axis direction by the distance d2/2.
[0212] The selection element layers are arranged in this manner,
and thus, an arbitrary selection element layer 34 is disposed with
equal distances from six selection element layers 34 adjacent to
the arbitrary selection element layer 34 in the xy-plane.
Specifically, for example, six selection element layers 34(m-1, n),
34(m+1, n), 34(m-1, n-1), 34(m, n-1), 34(m-1, n+1), and 34(m, n+1)
adjacent to the selection element layer 34(m, n) are arranged in
the vertices of the regular hexagon of which one side is the
distance d2, and the selection element layer 34(m, n) is disposed
in the center of the regular hexagon. As another example, six
selection element layers 34(m-1, n+1), 34(m+1, n+1), 34(m, n),
34(m+1, n), 34(m, n+2), and 34(m+1, n+2) adjacent to the selection
element layer 34(m, n+1) are arranged in the vertices of the
regular hexagon of which one side is the distance d2, and the
selection element layer 34(m, n+1) is disposed in the center of the
regular hexagon.
[0213] In the example of FIG. 28, the memory element layer 20 and
the selection element layer 34 do not overlap and are separate from
each other in the xy-plane. Thus, an internal connection layer 36
is further formed between the memory element layer 20 and the
selection element layer 34 such that the memory element layer 20
and the selection element layer 34 are connected to each other. For
example, the internal connection layer 36 has an oval shape so as
to overlap both the memory element layer 20 and the selection
element layer 34 in the xy-plane.
[0214] Hereinafter, configurations of sections of the memory cell
array 11 described in FIG. 28 which are taken along the xz-plane
and the yz-plane will be described with reference to FIGS. 29A to
30B. FIGS. 29A to 30B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the sixth embodiment, which are taken along the
xz-plane and the yz-plane. Specifically, FIGS. 29A to 30B show
sections taken along a line XXIXA-XXIXA, a line XXIXB-XXIXB, a line
XXXA-XXXA, and a line XXXB-XXXB shown in FIG. 28. In the following
description, differences between FIGS. 29A to 30B and FIGS. 19A to
20B will be described.
[0215] Initially, the configuration of the section of the memory
cell array 11 taken along the xz-plane will be described with
reference to FIGS. 29A and 29B.
[0216] As shown in FIGS. 29A and 29B, the first regions R1 are
formed so as to be separated from one another along the x-axis
direction by the distance 2d1. Specifically, the first regions R1
are formed so as to be in contact with the wiring layers 32
functioning as the word lines WLn and WL(n+2) and reach the wiring
layers 31 in the section taken along the line XXIXA-XXIXA. The
first regions R1 are formed so as to be in contract with the wiring
layers 32 functioning as the word lines WL(n-1) and WL(n+1) and
reach the wiring layers 31 in the section taken along the line
XXIXB-XXIXB. The first region R1 in the section taken along the
line XXIXA-XXIXA and the first region R1 in the section taken along
the line XXIXB-XXIXB are formed along the x-axis direction so as to
be separated from each other by the distance d1.
[0217] The internal connection layer 36 is located in an upper end
of the diffusion layer 43 and on the lower end of the conductive
layer 44. The center of the internal connection layer 36 along the
x-axis direction matches the centers of the widths of the first
region R1 and the second region R2 along the x-axis direction.
[0218] Hereinafter, the configuration of the section of the memory
cell array 11 taken along the yz-plane will be described with
reference to FIGS. 30A and 30B.
[0219] As shown in FIGS. 30A and 30B, the first region R1 is formed
so as to reach a part of an upper end of the wiring layer 31.
Specifically, the first region R1 is formed so as to be offset from
the center of the width of the wiring layer 31 along the y-axis
direction in the -y-axis direction in the section taken along the
line XXXA-XXXA, and is formed so as to be offset from the center of
the width of the wiring layer 31 along the y-axis direction in the
+y-axis direction in the section taken along the line XXXB-XXXB. A
center of a width of the first region R1 along the x-axis direction
is different from a center of a width of the second region R2
formed immediately above the first region R1 along the x-axis
direction.
[0220] That is, the first region R1 in the section taken along the
line XXXA-XXXA and the first region R1 in the section taken along
the line XXXB-XXXB are formed along the y-axis direction so as to
be separated from each other by the distance d2/2.
[0221] The internal connection layer 36 is formed on an upper end
of the diffusion layer 43. The internal connection layer 36 further
extends toward the +y-axis direction than the first region R1 in
the section taken along the line XXXA-XXXA, and further extends
toward the -y-axis direction than the first region R1 in the
section taken along the line XXXB-XXXB. The second region R2 is
formed on an upper end of the internal connection layer 36.
6.2 Advantage According to Present Embodiment
[0222] According to the sixth embodiment, when the magnetic tunnel
junction element MTJ is offset from the centers of the widths of
the corresponding bit line BL and source line SL along the y-axis
direction in the +y-axis direction, the select transistor ST is
offset from the centers of the widths of the corresponding bit line
BL and source line SL along the y-axis direction in the -y-axis
direction. When the magnetic tunnel junction element MTJ is offset
from the centers of the widths of the corresponding bit line BL and
source line SL along the y-axis direction in the -y-axis direction,
the select transistor ST is offset from the centers of the widths
of the corresponding bit line BL and source line SL along the
y-axis direction in the +y-axis direction. The select transistors
ST are disposed in the vertices and the center of the regular
hexagon in the xy-plane. Accordingly, the select transistor ST does
not overlap the magnetic tunnel junction element MTJ in the
xy-plane. Thus, it is possible to form the magnetic tunnel junction
element MTJ on a base portion in which the select transistor ST is
not present. Accordingly, it is possible to reduce a characteristic
fluctuation of the magnetic tunnel junction element MTJ in
manufacturing the magnetic tunnel junction element.
[0223] The internal connection layer 36 is formed between the
select transistor ST and the magnetic tunnel junction element MTJ.
The internal connection layer 36 overlaps both the select
transistor ST and the magnetic tunnel junction element MTJ in the
xy-plane. Accordingly, it is possible to connect the select
transistor ST and the magnetic tunnel junction element MTJ.
[0224] In addition, according to the sixth embodiment, it is
possible to similarly acquire other advantages mentioned in the
fourth embodiment.
6.3 Modification Example of Sixth Embodiment
[0225] Although the semiconductor storage device according to the
sixth embodiment in which the magnetic tunnel junction element MTJ
is formed above the select transistor ST is described, the present
embodiment is not limited thereto. For example, the magnetic tunnel
junction element MTJ may be formed under the select transistor
ST.
[0226] FIGS. 31A to 32B are examples of sectional views of a
stacked structure of a memory cell array of a semiconductor storage
device according to a modification example of the sixth embodiment,
which are taken along the xz-plane and the yz-plane. Specifically,
FIGS. 31A to 32B show sections taken along the line XXIXA-XXIXA,
the line XXIXB-XXIXB, the line XXXA-XXXA, and the line XXXB-XXXB
shown in FIG. 28, and correspond to FIGS. 29A to 30B.
[0227] As shown in FIGS. 31A to 32B, the magnetic tunnel junction
element MTJ is formed on the wiring layer 31, and the internal
connection layer 36 is formed on the magnetic tunnel junction
element MTJ. The select transistor ST is formed on the internal
connection layer 36, and the wiring layer 33 is formed on the
select transistor ST.
[0228] The magnetic tunnel junction element MTJ and the select
transistor ST shown in FIGS. 31A to 32B are merely substituted for
the magnetic tunnel junction element MTJ and the select transistor
ST shown in FIGS. 29A to 30B in the z-axis direction, and the
positional relation therebetween in the xy-plane is not
changed.
[0229] With such a configuration, even when the select transistor
ST is formed on the magnetic tunnel junction element MTJ, it is
possible to acquire the same advantage as that of the sixth
embodiment.
7. Seventh Embodiment
[0230] Hereinafter, a semiconductor storage device according to a
seventh embodiment will be described. Although the example in which
the transistor is used as the element for selecting the memory
element is described in the first embodiment to the sixth
embodiment, a case where a non-linear element having a rectifying
action such as a diode is used will be described in the seventh
embodiment.
[0231] That is, the semiconductor device according to the seventh
embodiment may be applied to not the semiconductor storage device
including the variable resistance element having a necessity for a
current to flow in both directions but the semiconductor storage
device including variable resistance element without having a
necessity for a large current to flow in both direction. For
example, a resistive random-access memory (ReRAM) or a phase-change
random-access memory (PCRAM) are known as the semiconductor storage
device including the above-described variable resistance
element.
[0232] Hereinafter, differences from the first embodiment will be
described.
7.1 Configuration
[0233] Initially, a configuration of the semiconductor storage
device according to the seventh embodiment will be described.
7.1.1. Configuration of Semiconductor Storage Device
[0234] FIG. 33 is a block diagram showing a configuration of a
semiconductor storage device 1A according to the seventh
embodiment. FIG. 33 corresponds to FIG. 1. As shown in FIG. 33, the
semiconductor storage device 1A includes a memory cell array 11A.
The semiconductor storage device 1A includes a word line and bit
line selection circuit 17 instead of the row decoder.
[0235] The memory cell array 11A includes a plurality of memory
cells MC associated with rows and columns. The memory cells MC
present in the same row are connected to the same word line WL, and
both ends of the memory cells MC present in the same column are
connected to the same bit line BL.
[0236] The memory cell MC includes a selector SEL and a variable
resistance element VR. For example, the selector SEL includes a
first end connected to the word line WL and a second end connected
to a first end of the variable resistance element VR. For example,
the selector SEL has a rectifying function, and is formed as a
bi-directional switching element that controls the supply of a
current to the variable resistance element VR. For example, the
variable resistance element VR includes a second end connected to
the bit line BL. In the following description, a case where the
selector SEL and the variable resistance element VR are connected
between the bit line BL and the word line WL in the order shown in
FIG. 33 will be described, but the present embodiment is not
limited thereto. For example, the first end of the selector SEL may
be connected to the bit line BL, and the second end of the variable
resistance element VR may be connected to the word line WL.
[0237] For example, the word line and bit line selection circuit 17
is connected between the WC/RC 12 and the memory cell array 11A,
and is connected to the bit line BL and the word line WL. Since the
word line and bit line selection circuit 17 supplies a current to
the memory cell MC which is an operation target through the bit
line BL and the word line WL, the word line and bit line selection
circuit selects the bit line BL and the word line WL connected to
the memory cell MC which is the operation target.
7.1.2. Stacked Structure of Memory Cell Array
[0238] Hereinafter, a stacked structure of a memory cell array of
the semiconductor storage device according to the seventh
embodiment will be described.
[0239] Initially, a layout of the memory cell array 11A in the
xy-plane will be described with reference to FIG. 34. FIG. 34 is a
top view of the memory cell array 11A of the semiconductor storage
device according to the seventh embodiment when viewed in the
+z-axis direction.
[0240] As shown in FIG. 34, a plurality of wiring layers 61 each
functioning as the word line WL extend, for example, along the
y-axis direction, and are arranged along the x-axis direction at
equal intervals. In the example of FIG. 34, four wiring layers 61
corresponding to an (n-1)-th-column word line WL(n-1), an
n-th-column word line WLn, an (n+1)-th-column word line WL(n+1),
and an (n+2)-th-column word line WL(n+2) are illustrated. Two
wiring layers 61 adjacent to each other are separated from each
other along the x-axis direction by a distance d2.
[0241] A plurality of wiring layers 62 each functioning as the bit
line BL is formed above the wiring layers 61. For example, the
wiring layers 62 extend along the x-axis direction, and are
arranged along the y-axis direction at equal intervals. In the
example of FIG. 34, four wiring layers 62 corresponding to a
(m-1)-th-row bit line BL(m-1), an m-th-row bit line BLm, an
(m+1)-th-row bit line BL(m+1), and an (m+2)-th-row bit line BL(m+2)
are illustrated. Specifically, two wiring layers 62 adjacent to
each other are separated from each other along the y-axis direction
by the distance d1.
[0242] In FIG. 34, a selection element layer 63 functioning as the
selector SEL is formed in a region in which the wiring layer 61 and
the wiring layer 62 intersect with each other. For example, the
selection element layer 63 has a cylindrical shape that extends
along the z-axis direction, and is formed between the wiring layer
61 and the wiring layer 62. In the example of FIG. 34, the center
of the selection element layer 63 is located at an intersection of
a central line of the wiring layer 61 along the y-axis direction
and a central line of the wiring layer 62 along the x-axis
direction. That is, the selection element layers 63 are arranged in
a rectangular grid in the xy-plane. Specifically, the selection
element layers 63 are arranged along the x-axis direction at equal
intervals for every distance d2, and are arranged along the y-axis
direction at equal intervals for every distance d1. The selection
element layers are arranged in this manner, and thus, the selection
element layers 63 are formed one by one for the combination of the
wiring layer 62 in a certain row and the wiring layer 61 in a
certain column.
[0243] In FIG. 34, the memory element layers 64 functioning as the
variable resistance elements VR are formed such that at least some
thereof overlap in regions occupied by the selection element layers
63. For example, the memory element layer 64 has a cylindrical
shape that extends along the z-axis direction, and is formed
between the wiring layer 61 and the wiring layer 62.
[0244] The memory element layers 64 are arranged in the honeycomb
shape in the xy-plane. Specifically, the memory element layers 64
are arranged in a position of vertices and a center of a regular
hexagon of which a length of one side is the distance d2 in the
xy-plane. More specifically, the memory element layers 64 are
arranged along the x-axis direction at equal intervals for every
distance d2, and are arranged along the y-axis direction at equal
intervals for every distance 2d1. That is, an (m-1)-th-row memory
element layer 64 and an (m+1)-th-row memory element layer 64 are
aligned in the y-axis direction. An m-th-row memory element layer
64 and an (m+2)-th-row memory element layer 64 are aligned in the
y-axis direction. However, the m-th-row memory element layer 64 and
the (m-1)-th-row memory element layer 64, and the m-th-row memory
element layer 64 and the (m+1)-th-row memory element layer 64 are
not aligned in the y-axis direction.
[0245] In the example of FIG. 34, the center of the m-th-row memory
element layer 64 is located in a position, which is offset from the
center of the width of the corresponding wiring layer 61 along the
x-axis direction, in the +x-axis direction. The centers of the
(m-1)-th-row and (m+1)-th-row memory element layers 64 are located
in positions, which are offset from the center of the width of the
corresponding wiring layer 61 along the x-axis direction, in the
-x-axis direction. The center of the m-th-row memory element layer
64 is located in a position offset from the centers of the
(m-1)-th-row and (m+1)-th-row memory element layers 64 along the
x-axis direction by a distance d2/2.
[0246] The memory element layers are arranged in this manner, and
thus, the memory element layers 64 are formed so as to correspond
to the selection element layers 63, and are formed one by one for
the combination of the wiring layer 62 in a certain row and the
wiring layer 61 in a certain column. An arbitrary memory element
layer 64 is disposed with equal distances from six memory element
layers 64 adjacent to the arbitrary memory element layer 64 in the
xy-plane. Specifically, for example, six memory element layers
64(m, n-1), 64(m, n+1), 64(m-1, n), 64(m-1, n+1), 64(m+1, n), and
64(m+1, n+1) adjacent to the memory element layer 64(m, n) are
arranged in the vertices of the regular hexagon of which one side
is the distance d2, and the memory element layer 64(m, n) is
disposed in the center of the regular hexagon. As another example,
six memory element layer 64(m+1, n-1), 64(m+1, n+1), 64(m, n-1),
64(m, n), 64(m+2, n-1), and 64(m+2, n) adjacent to the memory
element layer 64(m+1, n) are arranged in the vertices of the
regular hexagon of which one side is the distance d2, and the
memory element layer 64(m+1, n) is disposed in the center of the
regular hexagon.
[0247] Hereinafter, configurations of sections of the memory cell
array 11A described in FIG. 34 which are taken along the xz-plane
and the yz-plane will be described with reference to FIGS. 35A to
36B. FIGS. 35A to 36B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the seventh embodiment, which are taken along
the xz-plane and the yz-plane. Specifically, FIGS. 35A to 36B show
sections taken along a line XXXVA-XXXVA, a line XXXVB-XXXVB, a line
XXXVIA-XXXVIA, and a line XXXVIB-XXXVIB shown in FIG. 34. In FIGS.
35A to 36B, some insulating layers are omitted for simplicity of
illustration.
[0248] Initially, the configuration of the section of the memory
cell array 11A taken along the xz-plane will be described with
reference to FIGS. 35A and 35B.
[0249] As shown in FIGS. 35A and 35B, the plurality of wiring
layers 61 functioning as the word lines WL(n-1), WLn, WL(n+1), and
WL(n+2) is formed on the semiconductor substrate 30 at equal
intervals for every distance d2 in the section taken along the line
XXXVA-XXXVA. An insulating film (not shown) is formed on top
surfaces of the wiring layers 61.
[0250] First regions R1 are respectively formed in a plurality of
regions in which the selectors SEL are formed. The first regions R1
are formed along the x-axis direction so as to be separated from
one another by the distance d2. For example, the selection element
layer 63 functioning as the selector SEL is formed within the first
region Rl. An insulating film (not shown) is formed in a layer on
an upper end of the selection element layer 63.
[0251] Second regions R2 are respectively formed in a plurality of
regions in which the variable resistance elements VR are formed.
The second regions R2 are formed along the x-axis direction so as
to be separated from one another by the distance d2. Each second
region R2 reaches a part of the upper end of the selection element
layer 63. A conductive layer 65, the memory element layer 64, and a
conductive layer 65 are sequentially stacked within the second
region R2. The memory element layer 64 functions as the variable
resistance element VR. The conductive layers 65 and 66 function as
a lower electrode and an upper electrode of the variable resistance
element VR, respectively. Accordingly, a one-side end of the
variable resistance element VR and the other-side end of the
selector SEL are connected to each other.
[0252] In a layer on an upper end of the conductive layer 66, the
wiring layer 62 functioning as the bit line BL(m-1) is formed in
the section taken along the line XXXVA-XXXVA, and the wiring layer
62 functioning as the bit line BLm is formed in the section taken
along the line XXXVB-XXXVB. The wiring layer 62 is commonly
connected to the other-side ends of the variable resistance
elements VR of the plurality of memory cells MC arranged along the
x-axis direction.
[0253] The second region R2 is formed so as to be offset from the
first region R1 in the x-axis direction while maintaining a state
in which the conductive layer 65 is electrically connected to the
selection element layer 63. Specifically, the second region R2 is
formed so as to be offset from the first region R1 in the -x-axis
direction in the section taken along the line XXXVA-XXXVA, and is
formed as to be offset from the first region R1 in the +x-axis
direction in the section taken along the line XXXVB-XXXVB. The
second region R2 in the section taken along the line XXXVA-XXXVA
and the second region R2 in the section taken along the line
XXXVB-XXXVB are formed along the x-axis direction so as to be
offset from each other along the x-axis direction by the distance
d2/2.
[0254] Hereinafter, the configuration of the section of the memory
cell array 11A taken along the yz-plane will be described with
reference to FIGS. 36A and 36B.
[0255] As shown in FIGS. 36A and 36B, the wiring layer 61
functioning as the word line WL(n-1) is formed on the semiconductor
substrate 30. The plurality of wiring layers 62 functioning as the
bit lines BL(m+2), BL(m+1), BLm, and BL(m-1) is formed above the
wiring layers 61 at equal intervals for every distance d1.
[0256] The first regions R1 are formed along the y-axis direction
so as to be separated from one another by the distance d1. The
selector SEL having the same configuration as that of the selector
SEL described in FIGS. 35A and 35B is formed in the first region
R1. The plurality of selectors SEL formed along the y-axis
direction is commonly connected to the same wiring layer 61.
[0257] The second regions R2 are formed along the y-axis direction
so as to be separated from one another by the distance 2d1.
Specifically, the second regions R2 are formed under the wiring
layers 62 functioning as the bit lines BL(m+2) and BLm in the
section taken along the line XXXVIA-XXXVIA. The second regions R2
are formed under the wiring layers 62 functioning as the bit lines
BL(m+1) and BL(m-1) in the section taken along the line
XXXVIB-XXXVIB. The second regions R2 in the section taken along the
line XXXVIA-XXXVIA and the second regions R2 in the section taken
along the line XXXVIB-XXXVIB are formed along the y-axis direction
so as to be separated from each other by the distance d1. The
variable resistance element VR having the same configuration as
that of the variable resistance element VR described in FIGS. 35A
and 35B is formed in the second region R2.
[0258] The wiring layer 62 is formed in the layer on the upper end
of the conductive layer 66. The wiring layers 62 functioning as the
bit lines BL(m+2) and BLm are connected to the conductive layer 66
in the section taken along the line XXXVIA-XXXVIA, and the wiring
layers 62 functioning as the bit lines BL(m+1) and BL(m-1) are
connected to the conductive layers 62 in the section taken along
the line XXXVIB-XXXVIB. A center of a width of the wiring layer 62
along the y-axis direction matches centers of widths of the second
region R2 and the first region R1 formed immediately under the
wiring layer 62 along the y-axis direction.
7.2 Advantage According to Present Embodiment
[0259] According to the seventh embodiment, the variable resistance
elements VR are disposed in the vertices and the center of the
regular hexagon in the xy-plane. Specifically, the variable
resistance elements VR which correspond to the same bit line BL and
are adjacent to each other are separated along the x-axis direction
by the distance d2. The variable resistance elements VR which
correspond to the same word line WL and are adjacent to each other
are separated from each other along the y-axis direction by the
distance d1. The variable resistance element VR which corresponds
to the m-th-row bit line BL and the n-th-column word line WL and
the variable resistance element VR which corresponds to the
(m+1)-th-row bit line BL and the n-th-column word line WL are
separated along the x-axis direction by the distance d2/2.
Accordingly, it is possible to set the distances between all the
variable resistance elements VR adjacent to each other to be equal.
Thus, a manufacturing fluctuation in a manufacturing stage can be
reduced in the embodiment compared to the arrangement in which the
distances between all the variable resistance elements adjacent to
each other are not equal, such as in the case of the memory cells
arranged in the rectangular grid.
[0260] In addition, according to the seventh embodiment, it is
possible to similarly acquire other advantages mentioned in the
first embodiment.
8. Eighth Embodiment
[0261] Hereinafter, a semiconductor storage device according to an
eighth embodiment will be described. The variable resistance
element is offset from the selector along the x-axis direction in
the seventh embodiment, whereas the variable resistance element is
offset from the selector along the y-axis direction. Hereinafter,
differences from the seventh embodiment will be described.
8.1 Stacked Structure of Memory Cell Array
[0262] A stacked structure of a memory cell array of the
semiconductor storage device according to the eighth embodiment
will be described below.
[0263] Initially, a layout of the memory cell array 11A in the
xy-plane will be described with reference to FIG. 37. FIG. 37 is a
top view of the memory cell array 11 of the semiconductor storage
device according to the eighth embodiment when viewed in the
+z-axis direction.
[0264] As shown in FIG. 37, two wiring layers 62 adjacent to each
other are separated from each other along the y-axis direction by
the distance d2. Two wiring layers 61 adjacent to each other are
separated from each other along the x-axis direction by the
distance d1.
[0265] Selection element layers 63 are arranged in a rectangular
grid in the xy-plane. Specifically, the selection element layers 63
are arranged, for example, along the x-axis direction at equal
intervals for every distance d1, and are arranged along the y-axis
direction at equal intervals for every distance d2.
[0266] The memory element layers 64 are arranged in the honeycomb
shape in the xy-plane. Specifically, the memory element layers 64
are arranged in a position of vertices and a center of a regular
hexagon of which a length of one side is the distance d2 in the
xy-plane. More specifically, the memory element layers 64 are
arranged along the y-axis direction at equal intervals for every
distance d2, and are arranged along the x-axis direction at equal
intervals for every distance 2d1. That is, the (n-1)-th-column
memory element layer 64 and the (n+1)-th-column memory element
layer 64 are arranged in a similar order along the x-axis
direction. An n-th-column memory element layer 64 and an
(n+2)-th-column memory element layer 64 are arranged in a similar
order along the x-axis direction. However, the n-th-column memory
element layer 64, the (n-1)-th-column memory element layer 64, and
the (n+1)-th-column memory element layer 64 are not arranged in the
x-axis direction.
[0267] In the example of FIG. 37, a center of the n-th-column
memory element layer 64 is located in a position, which is offset
from a center of a width of the corresponding wiring layer 62 along
the y-axis direction, in the -y-axis direction. Centers of the
(n-1)-th-column and (n+1)-th-column memory element layers 64 are
located in positions, which are offset from a center of a width of
the corresponding wiring layer 62 along the y-axis direction, in
the +y-axis direction. The center of the n-th-column memory element
layer 64 is positioned in a position offset from the centers of the
(n-1)-th-column and (n+1)-th-column memory element layers 64, along
the y-axis direction by the distance d2/2.
[0268] The memory element layers are arranged in this manner, and
thus, an arbitrary memory element layer 64 is disposed with equal
distances from six memory element layers 64 adjacent to the
arbitrary memory element layer 64 in the xy-plane. Specifically,
for example, six memory element layers 64(m-1, n), 64(m+1, n),
64(m, n-1), 64(m+1, n-1), 64(m, n+1), and 64(m+1, n+1) adjacent to
the memory element layer 64(m, n) are arranged in the vertices of
the regular hexagon of which one side is the distance d2, and the
memory element layer 64(m, n) is disposed in the center of the
regular hexagon. As another example, six memory element layers
64(m-1, n+1), 64(m+1, n+1), 64(m-1, n), 64(m, n), 64(m-1, n+2), and
64(m, n+2) adjacent to the memory element layer 64(m, n+1) are
arranged in the vertices of the regular hexagon of which one side
is the distance d2, and the memory element layer 64(m, n+1) is
disposed in the center of the regular hexagon.
[0269] Hereinafter, configurations of sections of the memory cell
array 11A described in FIG. 37 which are taken along the xz-plane
and the yz-plane will be described with reference to FIGS. 38A to
39B. FIGS. 38A to 39B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the eighth embodiment, which are taken along
the xz-plane and the yz-plane. Specifically, FIGS. 38A to 39B show
sections taken along a line XXXVI I IA-XXXVI I IA, a line
XXXVIIIB-XXXVIIIB, a line XXXIXA-XXXIXA, and a line XXXIXB-XXXIXB
shown in FIG. 37. In the following description, differences between
FIGS. 38A to 39B and FIGS. 35A to 36B will be described.
[0270] Initially, the configuration of the section of the memory
cell array 11A taken along the xz-plane will be described with
reference to FIGS. 38A and 38B.
[0271] As shown in FIGS. 38A and 38B, the plurality of wiring
layers 32 functioning as the word lines WL(n-1), WLn, WL(n+1), and
WL(n+2) is formed in the same layer above the semiconductor
substrate 30 at equal intervals for every distance d1.
[0272] The first regions R1 are formed along the x-axis direction
so as to be separated from one another by the distance d1. A center
of a width of the first region R1 along the x-axis direction
matches a center of a width of the wiring layer 61 formed
immediately under the first region R1 along the x-axis direction.
The selector SEL having the same configuration as that of the
selector SEL described in the above-mentioned embodiment is formed
in the first region R1.
[0273] Second regions R2 are formed along the x-axis direction so
as to be separated from each other by the distance 2d1.
Specifically, the second regions R2 are formed above the wiring
layers 61 functioning as the word lines WL(n-1) and WL(n+1) in the
section taken along the line XXXVIIIA-XXXVIIIA. The second regions
R2 are formed above the wiring layers 61 functioning as the word
lines WLn and WL(n+2) in the section taken along the line
XXXVIIIB-XXXVIIIB. The second regions R2 in the section taken along
the line XXXVIIIA-XXXVIIIA and the second regions R2 in the section
taken along the line XXXVIIIB-XXXVIIIB are formed along the x-axis
direction so as to be separated from each other by the distance d1.
A center of a width of the second region R2 along the x-axis
direction matches a center of a width of the first region R1 formed
immediately under the second region R2 along the x-axis direction.
The variable resistance element VR having the same configuration as
that of the variable resistance element VR described in the
above-described embodiment is formed in the second region R2.
[0274] Hereinafter, the configuration of the section of the memory
cell array 11A taken along the yz-plane will be described with
reference to FIGS. 39A and 39B.
[0275] As shown in FIGS. 39A and 39B, on the semiconductor
substrate 30, the wiring layer 61 functioning as the word line
WL(n-1) is formed in the section taken along the line
XXXIXA-XXXIXA, and the wiring layer 61 functioning as the word line
WLn is formed in the section taken along the line
XXXIXB-XXXIXB.
[0276] The first regions R1 are formed along the y-axis direction
so as to be separated from one another by the distance d2.
[0277] The second regions R2 are formed along the y-axis direction
so as to be separated from one another by the distance d2. The
second region R2 is formed so as to be offset from the first region
R1 in the y-axis direction while maintaining a state in which the
conductive layer 65 is electrically connected to the selection
element layer 63. Specifically, the second region R2 is formed so
as to be offset from the first region R1 in the +y-axis direction
in the section taken along the line XXXIXA-XXXIXA, and is formed so
as to be offset from the first region R1 in the -y-axis direction
in the section taken along the line XXXIXB-XXXIXB. The second
region R2 in the section taken along the line XXXIXA-XXXIXA and the
second region R2 in the section taken along the line XXXIXB-XXXIXB
are formed along the x-axis direction so as to be offset from each
other along the x-axis direction by the distance d2/2.
[0278] The plurality of wiring layers 62 functioning as the bit
lines BL(m+2), BL(m+1), BLm, and BL(m-1) is formed on an upper end
of the conductive layer 66 at equal intervals by the distance d2. A
center of a width of the wiring layer 62 along the y-axis direction
matches a center of a width of the first region R1 formed
immediately under the wiring layer 62 along the y-axis
direction.
8.2 Advantage According to Present Embodiment
[0279] According to the eighth embodiment, the variable resistance
elements VR are disposed in the vertices and the center of the
regular hexagon in the xy-plane. Specifically, the variable
resistance elements VR which correspond to the same word line WL
and are adjacent to each other are separated from each other along
the y-axis direction by the distance d2. The variable resistance
elements VR which correspond to the same bit line BL and are
adjacent to each other are separated from each other along the
x-axis direction by the distance d1. The variable resistance
element VR which corresponds to the m-th-row bit line BL and the
n-th-column word line WL and the variable resistance element VR
which corresponds to the m-th-row bit line BL and the
(n+1)-th-column word line WL are separated along the y-axis
direction by the distance d2/2. Accordingly, it is possible to set
the distances between all the variable resistance elements VR
adjacent to each other to be equal. Thus, a manufacturing
fluctuation in a manufacturing stage can be reduced in the
embodiment compared to the arrangement in which the distances
between all the variable resistance elements adjacent to each other
are not equal, such as in the case of the memory cells arranged in
the rectangular grid.
[0280] In addition, according to the eighth embodiment, it is
possible to similarly acquire other advantages mentioned in the
seventh embodiment.
9. Ninth Embodiment
[0281] Hereinafter, a semiconductor storage device according to a
ninth embodiment will be described. The selectors are arranged in
the rectangular grid in the seventh embodiment and the eighth
embodiment, whereas the selectors are arranged in the honeycomb
shape in the ninth embodiment. In the ninth embodiment, the
selectors are arranged similarly to the arrangement of the variable
resistance elements described in the seventh embodiment. That is,
the center of the selector in the xy-plane matches the center of
the variable resistance element in the ninth embodiment.
Hereinafter, differences from the seventh embodiment will be
described.
9.1 Stacked Structure of Memory Cell Array
[0282] A stacked structure of a memory cell array of the
semiconductor storage device according to the ninth embodiment will
be described below.
[0283] Initially, a layout of the memory cell array 11A in the
xy-plane will be described with reference to FIG. 40. FIG. 40 is a
top view of the memory cell array 11A of the semiconductor storage
device according to the ninth embodiment when viewed in the +z-axis
direction.
[0284] As shown in FIG. 40, the arrangement of the wiring layers 61
and 62 and the memory element layers 64 is the same as that of the
seventh embodiment, and thus, the description is omitted.
[0285] The selection element layers 63 are arranged in the
honeycomb shape in the xy-plane. Specifically, the selection
element layers 63 are arranged in vertices and a center of a
regular hexagon of which a length of one side is the distance d2 in
the xy-plane. More specifically, the selection element layers 63
are arranged along the x-axis direction at equal intervals for
every distance d2, and are arranged along the y-axis direction at
equal intervals for every distance 2d1. That is, an (m-1)-th-row
selection element layer 63 and an (m+1)-th-row selection element
layer 63 are arranged in a similar order along the y-axis
direction. An m-th-row selection element layer 63 and an
(m+2)-th-row selection element layer 63 are arranged in a similar
order along the y-axis direction. However, the m-th-row selection
element layer 63, the (m-1)-th-row selection element layer 63, and
the (m+1)-th-row selection element layer 63 are not arranged along
the y-axis direction.
[0286] In the example of FIG. 40, a center of the selection element
layer 63 is disposed so as to match a center of the memory element
layer 64 in the xy-plane. That is, a center of the m-th-row
selection element layer 63 is located in a position offset from
centers of the (m-1)-th-row and (m+1)-th-row selection element
layers 63 along the x-axis direction by the distance d2/2.
[0287] The selection element layers are arranged in this manner,
and thus, an arbitrary selection element layer 63 is disposed with
equal distances from six selection element layers 63 adjacent to
the arbitrary selection element layer 63 in the xy-plane.
Specifically, for example, six selection element layers 63(m, n-1),
63(m, n+1), 63(m-1, n), 63(m-1, n+1), 63(m+1, n), and 63(m+1, n+1)
adjacent to the selection element layer 63(m, n) are arranged in
the vertices of the regular hexagon of which one side is the
distance d2, and the selection element layer 63(m n) is disposed in
the center of the regular hexagon. As another example, six
selection element layers 63(m+1, n-1), 63(m+1, n+1), 63(m, n-1),
63(m, n), 63(m+2, n-1), and 63(m+2, n) adjacent to the selection
element layer 63(m+1, n) are arranged in the vertices of the
regular hexagon of which one side is the distance d2, and the
selection element layer 63(m+1, n) is disposed in the center of the
regular hexagon.
[0288] Hereinafter, configurations of sections of the memory cell
array 11A described in FIG. 40 which are taken along the xz-plane
and the yz-plane will be described with reference to FIGS. 41A to
42B. FIGS. 41A to 42B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the ninth embodiment, which are taken along the
xz-plane and the yz-plane. Specifically, FIGS. 41A to 42B show
sections taken along a line XXXXIA-XXXXIA, a line XXXXIB-XXXXIB, a
line XXXXIIA-XXXXIIA, and a line XXXXIIB-XXXXIIB shown in FIG. 40.
In the following description, differences between FIGS. 41A to 42B
and FIGS. 35A to 36B will be described.
[0289] Initially, the configuration of the section of the memory
cell array 11A taken along the xz-plane will be described with
reference to FIGS. 41A and 41B.
[0290] As shown in FIGS. 41A and 41B, the first region R1 is formed
so as to reach a part of an upper end of the wiring layer 62.
Specifically, the first region R1 is in contact with a part of the
wiring layer 61 on the -x-axis in the section taken along the line
XXXXIA-XXXXIA, and is in contact with a part of the wiring layer 61
on the +x-axis in the section taken along the line XXXXIB-XXXXIB. A
center of a width of the first region R1 along the x-axis direction
matches a center of a width of the second region R2 formed
immediately above the first region R1 along the x-axis
direction.
[0291] That is, the combination of the first region R1 and the
second region R2 is formed so as to be offset from the wiring layer
61 in the -x-axis direction in the section taken along the line
XXXXIA-XXXXIA, and is formed so as to be offset from the wiring
layer 61 in the +x-axis direction in the section taken along the
line XXXXIB-XXXXIB. The combination of the first region R1 and the
second region R2 in the section taken along the line XXXXIA-XXXXIA
and the combination of the first region R1 and the second region R2
in the section taken along the line XXXXIB-XXXXIB are formed along
the x-axis direction so as to be offset from each other by the
distance d2/2.
[0292] Hereinafter, the configuration of the section of the memory
cell array 11A taken along the yz-plane will be described with
reference to FIGS. 42A and 42B.
[0293] As shown in FIGS. 42A and 42B, the first region R1 and the
second region R2 are formed such that the centers of the widths
along the y-axis direction match each other. The combination of the
first region R1 and the second region R2 are formed along the
y-axis direction so as to be offset by the distance 2d1.
Specifically, the combinations of the first regions R1 and the
second regions R2 are formed under the wiring layers 62 functioning
as the bit lines BL(m+2) and BLm in the section taken along the
line XXXXIIA-XXXXIIA. The combinations of the first regions R1 and
the second regions R2 are formed under the wiring layers 62
functioning as the bit lines BL(m+1) and BL(m-1) in the section
taken along the line XXXXIIB-XXXXIIB. The combination of the first
region R1 and the second region R2 formed under the wiring layer 62
functioning as the bit line BL(m-1) and the combination of the
first region R1 and the second region R2 formed under the wiring
layer 62 functioning as the bit line BLm are formed along the
y-axis direction so as to be separated from each other by the
distance d1.
9.2 Advantage According to Present Embodiment
[0294] According to the ninth embodiment, the selectors SEL are
disposed in the vertices and the center of the regular hexagon in
the xy-plane. Specifically, the selectors SEL which correspond to
the same bit line BL and are adjacent to each other are separated
along the x-axis direction by the distance d2. The selectors SEL
which correspond to the same word line WL and are adjacent to each
other are separated from each other along the y-axis direction by
the distance d1. The selector SEL which corresponds to the m-th-row
bit line BL and the n-th-column word line WL and the selector SEL
which corresponds to the (m+1)-th-row bit line BL and the
n-th-column word line WL are separated along the x-axis direction
by the distance d2/2. Accordingly, it is possible to set the
distances between all the selectors SEL adjacent to each other to
be equal. Thus, it is possible to reduce a manufacturing
fluctuation in a manufacturing stage.
[0295] A center of the selector SEL matches a center of the
variable resistance element VR in the xy-plane. Accordingly, it is
possible to increase a contact area between the selector SEL and
the variable resistance element VR. It is possible to further
reduce an area occupied by the memory cell in the xy-plane.
[0296] In addition, according to the ninth embodiment, it is
possible to similarly acquire other advantages mentioned in the
seventh embodiment.
10. Tenth Embodiment
[0297] Hereinafter, a semiconductor storage device according to a
tenth embodiment will be described. In the tenth embodiment, the
tenth embodiment is different from the seventh embodiment and the
eighth embodiment in that the select transistors are arranged in
the honeycomb shape, similarly to the ninth embodiment. In the
tenth embodiment, the selectors are arranged similarly to the
arrangement of the variable resistance elements described in the
eighth embodiment. That is, the center of the selector in the
xy-plane matches the center of the variable resistance element in
the tenth embodiment. Hereinafter, differences from the eighth
embodiment will be described.
10.1 Stacked Structure of Memory Cell Array
[0298] A stacked structure of a memory cell array of the
semiconductor storage device according to the tenth embodiment will
be described below.
[0299] Initially, a layout of the memory cell array 11A in the
xy-plane will be described with reference to FIG. 43. FIG. 43 is a
top view of the memory cell array 11A of the semiconductor storage
device according to the tenth embodiment when viewed in the +z-axis
direction.
[0300] As shown in FIG. 43, the arrangement of the wiring layers 61
and 62 and the memory element layers 64 is the same as that of the
eighth embodiment, and thus, the description is omitted.
[0301] The selection element layers 63 are arranged in the
honeycomb shape in the xy-plane. Specifically, the center of the
selection element layer 63 is disposed so as to match the center of
the memory element layer 64 in the xy-plane.
[0302] The selection element layers 63 are arranged in the
honeycomb shape in the xy-plane. Specifically, the selection
element layers 63 are arranged in vertices and a center of a
regular hexagon of which a length of one side is the distance d2 in
the xy-plane. More specifically, the selection element layers 63
are arranged along the y-axis direction at equal intervals for
every distance d2, and are arranged along the x-axis direction at
equal intervals for every distance 2d1. That is, the
(n-1)-th-column selection element layer 63 and the (n+1)-th-column
selection element layer 63 are arranged in a similar order along
the x-axis direction. The n-th-column selection element layer 63
and the (n+2)-th-column selection element layer 63 are arranged in
a similar order along the x-axis direction. However, the
n-th-column selection element layer 63, the (n-1)-th-column
selection element layer 63, and the (n+1)-th-column selection
element layer 63 are not arranged in the x-axis direction.
[0303] In the example of FIG. 43, a center of the selection element
layer 63 is disposed so as to match a center of the memory element
layer 64 in the xy-plane. That is, the center of the n-th-column
selection element layer 63 is located in a position offset from the
centers of the (n-1)-th-column and (n+1)-th-column selection
element layers 63, along the y-axis direction by the distance
d2/2.
[0304] The selection element layers are arranged in this manner,
and thus, an arbitrary selection element layer 63 is disposed with
equal distances from six selection element layers 63 adjacent to
the arbitrary selection element layer 63 in the xy-plane.
Specifically, for example, six selection element layers 63(m-1, n),
63(m+1, n), 63(m, n-1), 63(m+1, n-1), 63(m, n+1), and 63(m+1, n+1)
adjacent to the selection element layer 63(m, n) are arranged in
the vertices of the regular hexagon of which one side is the
distance d2, and the selection element layer 63(m, n) is disposed
in the center of the regular hexagon. As another example, six
selection element layers 63(m-1, n+1), 63(m+1, n+1), 63(m-1, n),
63(m, n), 63(m-1, n+2), and 63(m, n+2) adjacent to the selection
element layer 63(m, n+1) are arranged in the vertices of the
regular hexagon of which one side is the distance d2, and the
selection element layer 63(m, n+1) is disposed in the center of the
regular hexagon.
[0305] Hereinafter, configurations of sections of the memory cell
array 11A described in FIG. 43 which are taken along the xz-plane
and the yz-plane will be described with reference to FIGS. 44A to
45B. FIGS. 44A to 45B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the tenth embodiment, which are taken along the
xz-plane and the yz-plane. Specifically, FIGS. 44A to 45B show
sections taken along a line XXXXIVA-XXXXIVA, a line
XXXXIVB-XXXXIVB, a line XXXXVA-XXXXVA, and a line XXXXVB-XXXXVB
shown in FIG. 43. In the following description, differences between
FIGS. 44A to 45B and FIGS. 38A to 39B will be described.
[0306] Initially, the configuration of the section of the memory
cell array 11A taken along the xz-plane will be described with
reference to FIGS. 44A and 44B.
[0307] As shown in FIGS. 44A and 44B, the combination of the first
regions R1 and the second region R2 is formed so as to be separated
from one another along the x-axis direction by the distance 2d1.
Specifically, the first regions R1 are formed so as to reach the
upper ends of the wiring layers 61 functioning as the word lines
WL(n-1) and WL(n+1) in the section taken along the line
XXXXIVA-XXXXIVA. The first regions R1 are formed so as to reach the
upper ends of the wiring layers 61 functioning as the word lines
WLn and WL(n+2) in the section taken along the line
XXXXIVB-XXXXIVB. The first region R1 in the section taken along the
line XXXXIVA-XXXXIVA and the first region R1 in the section taken
along the line XXXXIVB-XXXXIVB are formed along the x-axis
direction so as to be separated from each other by the distance
d1.
[0308] Hereinafter, the configuration of the section of the memory
cell array 11A taken along the yz-plane will be described with
reference to FIGS. 45A and 45B.
[0309] As shown in FIGS. 45A and 45B, the first region R1 and the
second region R2 are formed such that the centers of the widths
along the y-axis direction match each other. The combinations of
the first regions R1 and the second regions R2 are formed along the
y-axis direction so as to be separated from one another by the
distance d2. The combination of the first region R1 and the second
region R2 is formed in a position, which is offset from the center
of the width of the wiring layer 62 along the y-axis direction, in
the +y-axis direction in the section taken along the line
XXXXVA-XXXXVA, and is formed in a position, which is offset from
the center of the width of the wiring layer 62 along the y-axis
direction, in the -y-axis direction in the section taken along the
line XXXXVB-XXXXVB. The combination of the first region R1 and the
second region R2 corresponding to the wiring layer 61 functioning
as the word line WL(n-1) and the combination of the first region R1
and the second region R2 corresponding to the wiring layer 61
functioning as the word line WLn are formed along the y-axis
direction so as to be offset from each other by the distance
d2/2.
10.2 Advantage According to Present Embodiment
[0310] According to the tenth embodiment, the selectors SEL are
disposed in the vertices and the center of the regular hexagon in
the xy-plane. Specifically, the selectors SEL which correspond to
the same word line WL and are adjacent to each other are separated
from each other along the y-axis direction by the distance d2. The
selectors SEL which correspond to the same bit line BL and are
adjacent to each other are separated from each other along the
x-axis direction by the distance d1. The selector SEL which
corresponds to the m-th-row bit line BL and the n-th-column word
line WL and the selector SEL which corresponds to the m-th-row bit
line BL and the (n+1)-th-column word line WL are separated along
the y-axis direction by the distance d2/2. Accordingly, it is
possible to set the distances between all the selectors SEL
adjacent to each other to be equal. Thus, it is possible to reduce
a manufacturing fluctuation in a manufacturing stage.
[0311] A center of the selector SEL matches a center of the
variable resistance element VR in the xy-plane. Accordingly, it is
possible to increase a contact area between the selector SEL and
the variable resistance element VR. It is possible to further
reduce an area occupied by the memory cell in the xy-plane.
[0312] In addition, according to the tenth embodiment, it is
possible to similarly acquire other advantages mentioned in the
eighth embodiment.
11. Eleventh Embodiment
[0313] Hereinafter, a semiconductor storage device according to an
eleventh embodiment will be described. In the ninth embodiment, the
selectors are offset from the word lines in the same direction with
the variable resistance elements, and thus, the selectors are
arranged in the honeycomb shape. In contrast, the eleventh
embodiment is different from the ninth embodiment in that the
selectors are offset from the word line in a direction opposite to
a direction the variable resistance elements are offset, and thus,
the selectors are arranged in the honeycomb shape. That is, in the
eleventh embodiment, when the center of the variable resistance
element is offset from the word line in the +x-axis direction, the
center of the selector is offset from the word line in the -x-axis
direction. When the center of the variable resistance element is
offset from the word line in the -x-axis direction, the center of
the selector is offset from the word line in the +x-axis direction.
Hereinafter, differences from the ninth embodiment will be
described.
11.1 Stacked Structure of Memory Cell Array
[0314] A stacked structure of a memory cell array of the
semiconductor storage device according to the eleventh embodiment
will be described below.
[0315] Initially, a layout of the memory cell array 11A in the
xy-plane will be described with reference to FIG. 46. FIG. 46 is a
top view of the memory cell array 11A of the semiconductor storage
device according to the eleventh embodiment when viewed in the
+z-axis direction.
[0316] As shown in FIG. 46, the arrangement of the wiring layers 61
and 62 and the memory element layers 64 is the same as that of the
ninth embodiment, and thus, the description is omitted.
[0317] The selection element layers 63 are arranged in the
honeycomb shape in the xy-plane. Specifically, the center of the
selection element layer 63 is disposed so as to be offset from the
wiring layer 61 in a direction opposite to the direction in which
the center of the memory element layer 64 is offset from the wiring
layer in the xy-plane.
[0318] The selection element layers 63 are formed such that at
least some thereof overlap in regions occupied by the wiring layers
61. More specifically, the center of the m-th-row selection element
layer 63 is located in a position which is offset from the center
of the width of the corresponding wiring layer 61 along the x-axis
direction, in the -x-axis direction. The centers of the
(m-1)-th-row and (m+1)-th-row selection element layers 63 are
located in positions, which are offset from the center of the width
of the corresponding wiring layer 61 along the x-axis direction, in
the +x-axis direction. The center of the m-th-row selection element
layer 63 is located in a position, which is offset from the centers
of the (m-1)-th-row and (m+1)-th-row selection element layers 63,
along the x-axis direction by the distance d2/2.
[0319] The selection element layers are arranged in this manner,
and thus, an arbitrary selection element layer 63 is disposed with
equal distances from six selection element layers 63 adjacent to
the arbitrary selection element layer 63 in the xy-plane.
Specifically, for example, six selection element layers 63(m, n-1),
63(m, n+1), 63(m-1, n-1), 63(m-1, n), 63(m+1, n-1), and 63(m+1, n)
adjacent to the selection element layer 63(m, n) are arranged in
the vertices of the regular hexagon of which one side is the
distance d2, and the selection element layer 63(m, n) is disposed
in the center of the regular hexagon. As another example, six
selection element layers 63(m+1, n-1), 63(m+1, n+1), 63(m, n),
63(m, n+1), 63(m+2, n), and 63(m+2, n+1) adjacent to the selection
element layer 63(m+1, n) are arranged in the vertices of the
regular hexagon of which one side is the distance d2, and the
selection element layer 63(m+1, n) is disposed in the center of the
regular hexagon.
[0320] In the example of FIG. 46, the memory element layer 64 and
the selection element layer 63 do not overlap and are separate from
each other in the xy-plane. Thus, an internal connection layer 67
is further formed between the memory element layer 64 and the
selection element layer 63 such that the memory element layer 64
and the selection element layer 63 are connected to each other. For
example, the internal connection layer 67 has an oval shape so as
to overlap both the memory element layer 64 and the selection
element layer 63 in the xy-plane.
[0321] Hereinafter, configurations of sections of the memory cell
array 11A described in FIG. 46 which are taken along the xz-plane
and the yz-plane will be described with reference to FIGS. 47A to
48B. FIGS. 47A to 48B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the eleventh embodiment, which are taken along
the xz-plane and the yz-plane. Specifically, FIGS. 47A to 48B show
sections taken along a line XXXXVIIA-XXXXVIIA, a line
XXXXVIIB-XXXXVIIB, a line XXXXVIIIA-XXXXVIIIA, and a line
XXXXVIIIB-XXXXVIIIB shown in FIG. 46. In the following description,
differences between FIGS. 47A to 48B and FIGS. 41A to 42B will be
described.
[0322] Initially, the configuration of the section of the memory
cell array 11A taken along the xz-plane will be described with
reference to FIGS. 47A and 47B.
[0323] As shown in FIGS. 47A and 47B, the first region R1 is formed
so as to reach a part of an upper end of the wiring layer 61.
Specifically, the first region R1 reaches a part of the upper end
of the wiring layer 61 on the +x-axis in the section taken along
the line XXXXVIIA-XXXXVIIA, and reaches a part of the upper end of
the wiring layer 61 on the -x-axis in the section taken along the
line XXXXVIIB-XXXXVIIB. A center of a width of the first region R1
along the x-axis direction is different from a center of a width of
the second region R2 formed immediately above the first region R1
along the x-axis direction.
[0324] That is, in the section taken along the line
XXXXVIIA-XXXXVIIA, the second region R2 is formed so as to be
offset from the wiring layer 61 in the -x-axis direction, and the
first region R1 is formed so as to be offset from the wiring layer
61 in the +x-axis direction. In the section taken along the line
XXXXVIIB-XXXXVIIB, the second region R2 is formed so as to be
offset from the wiring layer 61 in the +x-axis direction, and the
first region R1 is formed so as to be offset from the wiring layer
61 in the -x-axis direction. The first region R1 and the second
region R2 in the section taken along the line XXXXVIIA-XXXXVIIA and
the first region R1 and the second region R2 in the section taken
along the line XXXXVIIB-XXXXVIIB are formed along the x-axis
direction so as to be offset from each other by the distance
d2/2.
[0325] The internal connection layer 67 is formed on an upper end
of the selection element layer 63. The internal connection layer 67
further extends toward the -x-axis direction than the selector SEL
in the section taken along the line XXXXVIIA-XXXXVIIA, and further
extends toward the +x-axis direction than the selector SEL in the
section taken along the line XXXXVIIB-XXXXVIIB. The second region
R2 is formed on an upper end of the internal connection layer
67.
[0326] Hereinafter, the configuration of the section of the memory
cell array 11A taken along the yz-plane will be described with
reference to FIGS. 48A and 48B.
[0327] As shown in FIGS. 48A and 48B, the first regions R1 are
formed along the y-axis direction so as to be separated from one
another by the distance 2d1. Specifically, the first regions R1 are
formed under the wiring layer 62 functioning as the bit lines
BL(m+1) and BL(m-1) in the section taken along the line
XXXXVIIIA-XXXXVIIIA. Specifically, the first regions R1 are formed
under the wiring layers 62 functioning as the bit lines BL(m+2) and
BLm in the section taken along the line XXXXVIIIB-XXXXVIIIB. The
first region R1 in the section taken along the line
XXXXVIIA-XXXXVIIA and the first region R1 in the section taken
along the line XXXXVIIB-XXXXVIIB are formed along the y-axis
direction so as to be separated from each other by the distance
d1.
[0328] The internal connection layer 67 is formed in an upper end
of the selection element layer 63 and a lower end of the conductive
layer 65. For example, a center of the internal connection layer 67
along the y-axis direction matches centers of widths of the first
region R1 and the second region R2 along the y-axis direction.
11.2 Advantage According to Present Embodiment
[0329] According to the eleventh embodiment, when the variable
resistance element VR is offset from the center of the width of the
corresponding word line WL along the x-axis direction in the
+x-axis direction, the selector SEL is offset from the center of
the width of the corresponding word line WL along the x-axis
direction in the -x-axis direction. When the variable resistance
element VR is offset from the center of the width of the
corresponding word line WL along the x-axis direction in the
-x-axis direction, the selector SEL is offset from the center of
the width of the corresponding word line WL along the x-axis
direction in the +x-axis direction. The selectors SEL are disposed
in the vertices and the center of the regular hexagon in the
xy-plane. Accordingly, the selector SEL does not overlap the
variable resistance element VR in the xy-plane. Thus, it is
possible to form the variable resistance element VR on a base
portion in which the selector SEL is not present. Accordingly, it
is possible to reduce a characteristic fluctuation of the variable
resistance element VR in manufacturing the variable resistance
element.
[0330] The internal connection layer 67 is formed between the
selector SEL and the variable resistance element VR. The internal
connection layer 67 overlaps both the selector SEL and the variable
resistance element VR in the xy-plane. Accordingly, it is possible
to connect the selector SEL and the variable resistance element
VR.
[0331] In addition, according to the eleventh embodiment, it is
possible to similarly acquire other advantages mentioned in the
ninth embodiment.
12. Twelfth Embodiment
[0332] Hereinafter, a semiconductor storage device according to a
twelfth embodiment will be described. In the tenth embodiment, the
selectors are offset from the word lines in the same direction with
the variable resistance elements, and thus, the selectors are
arranged in the honeycomb shape. In contrast, the twelfth
embodiment is different from the tenth embodiment in that the
selectors are offset from the word line in a direction opposite to
a direction the variable resistance elements are offset, and thus,
the selectors are arranged in the honeycomb shape. That is, in the
twelfth embodiment, when the center of the variable resistance
element is offset from the bit line in the +y-axis direction, the
center of the selector is offset from the bit line in the -y-axis
direction. When the center of the variable resistance element is
offset from the bit line in the -y-axis direction, the center of
the selector is offset from the bit line in the +y-axis direction.
Hereinafter, differences from the tenth embodiment will be
described.
12.1 Stacked Structure of Memory Cell Array
[0333] A stacked structure of a memory cell array of the
semiconductor storage device according to the twelfth embodiment
will be described below.
[0334] Initially, a layout of the memory cell array 11A in the
xy-plane will be described with reference to FIG. 49. FIG. 49 is a
top view of the memory cell array 11A of the semiconductor storage
device according to the twelfth embodiment when viewed in the
+z-axis direction.
[0335] As shown in FIG. 49, the arrangement of the wiring layers 61
and 62 and the memory element layers 64 is the same as that of the
tenth embodiment, and thus, the description is omitted.
[0336] The selection element layers 63 are arranged in the
honeycomb shape in the xy-plane. Specifically, the center of the
selection element layer 63 is disposed so as to be offset from the
wiring layer 62 in a direction opposite to the direction in which
the center of the memory element layer 64 is offset from the wiring
layers in the xy-plane.
[0337] In FIG. 49, the selection element layers 63 are formed such
that at least some thereof overlap in regions occupied by the
wiring layers 62. More specifically, the center of the n-th-column
selection element layer 63 is located in a position, which is
offset from the center of the width of the corresponding wiring
layer 62 along the y-axis direction, in the +y-axis direction. The
centers of the (n-1)-th-column and (n+1)-th-column selection
element layers 63 are located in positions, which are offset from
the center of the width of the corresponding wiring layer 62 along
the y-axis direction, in the -y-axis direction. The center of the
n-th-column selection element layer 63 is located in a position
offset from the centers of the (n-1)-th-column and (n+1)-th-column
selection element layers 63, along the y-axis direction by the
distance d2/2.
[0338] The selection element layers are arranged in this manner,
and thus, an arbitrary selection element layer 63 is disposed with
equal distances from six selection element layers 63 adjacent to
the arbitrary selection element layer 63 in the xy-plane.
Specifically, for example, six selection element layers 63(m-1, n),
63(m+1, n), 63(m-1, n-1), 63(m, n-1), 63(m-1, n+1), and 63(m, n+1)
adjacent to the selection element layer 63(m, n) are arranged in
the vertices of the regular hexagon of which one side is the
distance d2, and the selection element layer 63(m, n) is disposed
in the center of the regular hexagon. As another example, six
selection element layers 63(m-1, n+1), 63(m+1, n+1), 63(m, n),
63(m+1, n), 63(m, n+2), and 63(m+1, n+2) adjacent to the selection
element layer 63(m, n+1) are arranged in the vertices of the
regular hexagon of which one side is the distance d2, and the
selection element layer 63(m, n+1) is disposed in the center of the
regular hexagon.
[0339] In the example of FIG. 49, the memory element layer 64 and
the selection element layer 63 do not overlap and are separate from
each other in the xy-plane. Thus, an internal connection layer 67
is further formed between the memory element layer 64 and the
selection element layer 63 such that the memory element layer 64
and the selection element layer 63 are connected to each other. For
example, the internal connection layer 67 has an oval shape so as
to overlap both the memory element layer 64 and the selection
element layer 63 in the xy-plane.
[0340] Hereinafter, configurations of sections of the memory cell
array 11A described in FIG. 49 which are taken along the xz-plane
and the yz-plane will be described with reference to FIGS. 50A to
51B. FIGS. 50A to 51B are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the twelfth embodiment, which are taken along
the xz-plane and the yz-plane. Specifically, FIGS. 50A to 51B show
sections taken along a line XXXXXA-XXXXXA, a line XXXXXB-XXXXXB, a
line XXXXXIA-XXXXXIA, and a line XXXXXIB-XXXXXIB shown in FIG. 49.
In the following description, differences between FIGS. 50A to 51B
and FIGS. 44A to 45B will be described.
[0341] Initially, the configuration of the section of the memory
cell array 11A taken along the xz-plane will be described with
reference to FIGS. 50A and 50B.
[0342] As shown in FIGS. 50A and 50B, the first regions R1 is
formed so as to be separated from one another along the x-axis
direction by the distance 2d1. Specifically, the first regions R1
are formed so as to reach the upper ends of the wiring layers 61
functioning as the word lines WLn and WL(n+2) in the section taken
along the line XXXXXA-XXXXXA. The first regions R1 are formed so as
to reach the upper ends of the wiring layers 61 functioning as the
word lines WL(n-1) and WL(n+1) in the section taken along the line
XXXXXB-XXXXXB. The first region R1 in the section taken along the
line XXXXXA-XXXXXA and the first region R1 in the section taken
along the line XXXXXB-XXXXXB are formed along the x-axis direction
so as to be separated from each other by the distance d1.
[0343] The internal connection layer 67 is located in an upper end
of the selection element layer 63 and a lower end of the conductive
layer 65. The center of the width of the internal connection layer
67 along the x-axis direction matches the centers of the widths of
the first region R1 and the second region R2 along the x-axis
direction.
[0344] Hereinafter, the configuration of the section of the memory
cell array 11A taken along the yz-plane will be described with
reference to FIGS. 51A and 51B.
[0345] As shown in FIGS. 51A and 51B, the first region R1 is formed
so as to be offset from the wiring layer 62 in the -y-axis
direction in the section taken along the line XXXXXIA-XXXXXIA, and
is formed so as to be offset from the wiring layer 62 in the
+y-axis direction in the section taken along the line
XXXXXIB-XXXXXIB. The first region R1 in the section taken along the
line XXXXXIA-XXXXXIA and the first region R1 in the section taken
along the line XXXXXIB-XXXXXIB are formed along the y-axis
direction so as to be separated from each other by the distance
d2/2.
[0346] The internal connection layer 67 further extends toward the
+y-axis direction than the first region R1 in the section taken
along the line XXXXXIA-XXXXXIA, and further extends toward the
-y-axis direction than the first region R1 in the section taken
along the line XXXXXIB-XXXXXIB. The second region R2 is formed on
an upper end of the internal connection layer 36.
12.2 Advantage According to Present Embodiment
[0347] According to the twelfth embodiment, when the variable
resistance element VR is offset from the center of the width of the
corresponding bit line BL along the y-axis direction in the +y-axis
direction, the selector SEL is offset from the center of the width
of the corresponding bit line BL along the y-axis direction in the
-y-axis direction. When the variable resistance element VR is
offset from the center of the width of the corresponding bit line
BL along the y-axis direction in the -y-axis direction, the
selector SEL is offset from the center of the width of the
corresponding bit line BL along the y-axis direction in the +y-axis
direction. The selectors SEL are disposed in the vertices and the
center of the regular hexagon in the xy-plane. Accordingly, the
selector SEL does not overlap the variable resistance element VR in
the xy-plane. Thus, it is possible to form the variable resistance
element VR on a base portion in which the selector SEL is not
present. Accordingly, it is possible to reduce a characteristic
fluctuation of the variable resistance element VR in manufacturing
the variable resistance element.
[0348] The internal connection layer 67 is formed between the
selector SEL and the variable resistance element VR. The internal
connection layer 67 overlaps both the selector SEL and the variable
resistance element VR in the xy-plane. Accordingly, it is possible
to connect the selector SEL and the variable resistance element
VR.
[0349] In addition, according to the twelfth embodiment, it is
possible to similarly acquire other advantages mentioned in the
tenth embodiment.
13. Thirteenth Embodiment
[0350] Hereinafter, a semiconductor storage device according to a
thirteenth embodiment will be described. In the seventh embodiment
to the twelfth embodiment, the configuration in which the memory
cell includes the selector including the first end connected to the
bit line and the second end connected to the first end of the
variable resistance element and the variable resistance element
including the second end connected to the word line is described.
In contrast, in the thirteenth embodiment, a memory cell includes a
selector including a first end connected to the word line and a
second end connected to the first end of the variable resistance
element and a variable resistance element including a second end
connected to the bit line. The thirteenth embodiment is different
from the seventh embodiment to the twelfth embodiment in that the
memory cells are formed in two layers in the z-axis direction.
Hereinafter, differences from the seventh embodiment will be
described.
13.1 Stacked Structure of Memory Cell Array
[0351] Hereinafter, a stacked structure of a memory cell array of
the semiconductor storage device according to the thirteenth
embodiment will be described.
[0352] Initially, a layout of the memory cell array 11A in the
xy-plane will be described with reference to FIG. 52. FIG. 52 is a
top view of the memory cell array 11A of the semiconductor storage
device according to the thirteenth embodiment when viewed in the
+z-axis direction.
[0353] For example, as shown in FIG. 52, the plurality of wiring
layers 62A functioning as first bit lines BL1 extends along the
x-axis direction, and are arranged along the y-axis direction at
equal intervals. In the example of FIG. 52, four wiring layers 62A
corresponding to an (m-1)-th-row first bit line BL1(m-1), an
m-th-row first bit line BL1m, an (m+1)-th-row first bit line
BL1(m+1), and an (m+2)-th-row first bit line BL1(m+2) are
illustrated. Two wiring layers 62A adjacent to each other are
separated from each other along the y-axis direction by the
distance d1.
[0354] The wiring layer 61 is formed above the wiring layer
62A.
[0355] A plurality of wiring layers 62B each functioning as a
second bit line BL2 is formed above the wiring layers 61. For
example, the wiring layers 62B extend along the x-axis direction,
and are arranged along the y-axis direction at equal intervals. In
the example of FIG. 52, four wiring layers 62B corresponding to an
(m-1)-th-row second bit line BL2(m-1), an m-th-row second bit line
BL2m, an (m+1)-th-row second bit line BL2(m+1), and an (m+2)-th-row
second bit line BL2(m+2) are illustrated. Specifically, two wiring
layers 62B adjacent to each other are separated from each other
along the y-axis direction by the distance d1.
[0356] For example, the wiring layers 62A and 62B are formed in a
region in which the wiring layers overlap each other in the
xy-plane.
[0357] In FIG. 52, selection element layers 63A and 63B functioning
as selectors SEL1 and SEL2 are formed in regions in which the
wiring layers 62A and 62B intersect with the wiring layer 61. For
example, the selection element layers 63A and 63B each have a
cylindrical shape that extends along the z-axis direction. The
selection element layer 63A is formed between the wiring layer 62A
and the wiring layer 61, and the selection element layer 63B is
formed between the wiring layer 61 and the wiring layer 62B. In the
example of FIG. 52, the selection element layers 63A and 63B locate
coaxially in the xy-plane. Selection element layers 63A and 63B are
arranged in a rectangular grid in the xy-plane. The arrangement of
the selection element layers 63A and 63B in the xy-plane is the
same as that of the selection element layers 63 in the seventh
embodiment, and thus, the description thereof will be omitted.
[0358] In FIG. 52, memory element layers 64A and 64B functioning as
variable resistance elements VR1 and VR2 are formed in a region
including a part of a region in which the wiring layers 62A and 62B
intersect with the wiring layer 61. For example, the memory element
layers 64A and 64B each have a cylindrical shape that extends along
the z-axis direction. The memory element layer 64A is formed
between the wiring layer 62A and the wiring layer 61, and the
memory element layer 64B is formed between the wiring layer 61 and
the wiring layer 62B. In the example of FIG. 52, the memory element
layers 64A and 64B locate coaxially in the xy-plane. Memory element
layers 64A and 64B are disposed in a honeycomb shape in the
xy-plane. The arrangement of the memory element layers 64A and 64B
in the xy-plane is the same as that of the memory element layers 64
in the seventh embodiment, and thus, the description thereof will
be omitted.
[0359] Hereinafter, configurations of sections of the memory cell
array 11A described in FIG. 52, which are taken along the xz-plane
and the yz-plane, will be described with reference to FIGS. 53 and
54. FIGS. 53 and 54 are examples of sectional views of a stacked
structure of the memory cell array of the semiconductor storage
device according to the thirteenth embodiment, which are taken
along the xz-plane and the yz-plane. Specifically, FIGS. 53 and 54
show sections taken along a line XXXXXI II-XXXXXII I and a line
XXXXXIV-XXXXXIV shown in FIG. 52. In FIGS. 53 and 54, some
insulating layers are omitted for simplicity of illustration.
[0360] Initially, the configuration of the section of the memory
cell array 11A taken along the xz-plane will be described with
reference to FIG. 53.
[0361] As shown in FIG. 53, the wiring layer 62A functioning as the
first bit line BL1(m-1) is formed on the semiconductor substrate 30
in the section taken along the line XXXXXIII-XXXXXIII. An
insulating film (not shown) is formed on top surfaces of the wiring
layers 62A.
[0362] First regions R1 are respectively formed in a plurality of
regions in which the selectors SEL1 are formed. The first regions
R1 are formed along the x-axis direction so as to be separated from
one another by the distance d2. For example, the selection element
layer 63A including a semiconductor layer functioning as the
selector SEL1 is formed within the first region R1. In the example
of FIG. 53, the selection element layer 63A has, for example,
non-linear characteristics that allow a current to easily flow to
the wiring layer 61 from the wiring layer 62A and a current to
hardly flow to the wiring layer 62A from the wiring layer 61. An
insulating film (not shown) is formed in a layer on an upper end of
the selection element layer 63A.
[0363] Second regions R2 are respectively formed in a plurality of
regions in which the variable resistance elements VR1 are formed.
The second regions R2 are formed along the x-axis direction so as
to be separated from one another by the distance d2. Each second
region R2 reaches a part of the upper end of the selection element
layer 63A. A conductive layer 65A, the memory element layer 64A,
and a conductive layer 66A are sequentially stacked within the
second region R2. The memory element layer 64A functions as the
variable resistance element VR1. The conductive layers 65A and 66A
function as a lower electrode and an upper electrode of the
variable resistance element VR1, respectively. Accordingly, a
one-side end of the variable resistance element VR1 and the
other-side end of the selector SEL1 are connected to each
other.
[0364] The plurality of wiring layers 61 functioning as the word
lines WL(n-1), WLn, WL(n+1), and WL(n+2) is formed in a layer on an
upper end of the conductive layer 66A at equal intervals by the
distance d2. The wiring layer 61 is connected to a part of an upper
end of the conductive layer 66A. The center of the width of the
wiring layer 61 along the x-axis direction matches the center of
the width of the selection element layer 63A along the x-axis
direction. The wiring layer 61 is commonly connected to the
other-side ends of the variable resistance elements VR of the
plurality of memory cells MC arranged along the x-axis direction.
An insulating film (not shown) is formed on top surfaces of the
wiring layers 61.
[0365] Third regions R3 are formed in a plurality of regions in
which selectors SEL2 are formed. The third regions R3 are formed
along the x-axis direction so as to be separated from one another
by the distance d2. For example, the selection element layer 63B
functioning as the selector SEL2 is formed within the third region
R3. In the example of FIG. 53, the selection element layer 63B has,
for example, non-linear characteristics that allow a current to
easily flow to the wiring layer 61 from the wiring layer 62B and a
current to hardly flow to the wiring layer 62B from the wiring
layer 61. A center of a width of the third region R3 along the
x-axis direction is different from a center of a width of the
wiring layer 61 and the first region R1 formed immediately under
the third region R3 along the x-axis direction. An insulating film
(not shown) is formed in a layer on an upper end of the selection
element layer 63B.
[0366] Fourth regions R4 are formed in a plurality of regions in
which variable resistance elements VR2 are formed. The fourth
regions R4 are formed along the x-axis direction so as to be
separated from one another by the distance d2. Each fourth region
R4 reaches apart of the upper end of the selection element layer
63B. A conductive layer 65B, the memory element layer 64B, and a
conductive layer 66B are sequentially stacked within the fourth
region R4. The memory element layer 64B functions as the variable
resistance element VR2. The conductive layers 65B and 66B function
as a lower electrode and an upper electrode of the variable
resistance element VR2, respectively. Accordingly, a one-side end
of the variable resistance element VR2 and the other-side end of
the selector SEL2 are connected to each other.
[0367] The wiring layer 62B functioning as the second bit line
BL2(m-1) is formed in a layer on an upper end of the conductive
layer 66B.
[0368] The second region R2 and the fourth region R4 are
respectively formed so as to be offset from the first region R1 and
the third region R3 in the x-axis direction while maintaining a
state in which the conductive layers 65A and 65B are electrically
connected to the selection element layers 63A and 63B.
Specifically, the second region R2 and the fourth region R4 are
formed so as to be offset from the first region R1 and the third
region R3 in the -x-axis direction.
[0369] Hereinafter, the configuration of the section of the memory
cell array 11A taken along the yz-plane will be described with
reference to FIG. 54.
[0370] As shown in FIG. 54, the plurality of wiring layers 62A
functioning as the first bit lines BL1(m+2), BL1(m+1), BL1m, and
BL1(m-1) is formed on the semiconductor substrate 30.
[0371] The first regions R1 are formed along the y-axis direction
so as to be separated from one another by the distance d1. The
selector SEL1 having the same configuration as that of the selector
SEL1 described in FIG. 54 is formed in the first region R1.
[0372] The second regions R2 are formed along the y-axis direction
so as to be separated from one another by the distance 2d1.
Specifically, the second regions R2 are formed above the wiring
layers 62A functioning as the first bit lines BL1(m+2) and BL1m in
the section taken along the line XXXXXIV-XXXXXIV. A center of a
width of the second region R2 along the y-axis direction matches a
center of a width of the first region R1 formed immediately under
the second region R2 along the y-axis direction. That is, the
second region R2 formed above the wiring layer 62A functioning as
the first bit line BL1(m+2) and the first region R1 formed on the
wiring layer 62A functioning as the first bit line BL1(m+1) are
formed along the y-axis direction so as to be separated from each
other by the distance d1. The variable resistance element VR1
having the same configuration as that of the variable resistance
element VR1 described in FIG. 53 is formed in the second region
R2.
[0373] The wiring layer 61 is formed in the layer on the upper end
of the conductive layer 66A.
[0374] The third regions R3 are formed along the y-axis direction
so as to be separated from one another by the distance d1. The
selector SEL2 having the same configuration as that of the selector
SEL2 described in FIG. 54 is formed in the third region R3. A
center of a width of the third region R3 along the y-axis direction
matches centers of widths of the first region R1, the second region
R2, and the wiring layer 62A formed immediately under the third
region R3 along the y-axis direction.
[0375] The fourth regions R4 are formed along the y-axis direction
so as to be separated from one another by the distance 2d1.
Specifically, the fourth regions R4 are formed under the wiring
layers 62B functioning as the second bit lines BL2(m+2) and BL2m in
the section taken along the line XXXXXIV-XXXXXIV. A center of a
width of the fourth region R4 along the y-axis direction matches
centers of widths of the third region R3, the second region R2, the
first region R1, and the wiring layer 62A formed immediately under
the fourth region R4 along the y-axis direction. That is, the
fourth region R4 formed under the wiring layer 62B functioning as
the second bit line BL2(m+2) and the third region R3 formed above
the wiring layer 62 functioning as the first bit line BL1(m+1) are
formed along the y-axis direction so as to be separated from each
other by the distance d1. The variable resistance element VR2
having the same configuration as that of the variable resistance
element VR2 described in FIG. 53 is formed in the fourth region
R4.
[0376] The plurality of wiring layers 62B functioning as the second
bit line BL2(m+2), BL2(m+1), BL2m, and BL2(m-1) is formed in the
layer of the upper end of the conductive layer 66B.
13.2 Advantage According to Present Embodiment
[0377] According to the thirteenth embodiment, the variable
resistance elements VR1 and VR2 are disposed in the vertices and
the center of the regular hexagon in the xy-plane. Specifically,
the variable resistance elements VR1 which correspond to the same
first bit line BL1 and are adjacent to each other are separated
along the x-axis direction by the distance d2. The variable
resistance elements VR1 which correspond to the same word line WL
and are adjacent to each other are separated from each other along
the y-axis direction by the distance d1. The variable resistance
element VR1 which corresponds to the m-th-row first bit line BL1
and the n-th-column word line WL and the variable resistance
element VR1 which corresponds to the (m+1)-th-row first bit line
BL1 and the n-th-column word line WL are separated along the x-axis
direction by the distance d2/2. Accordingly, it is possible to set
the distances between all the variable resistance elements VR1
adjacent to each other to be equal. The variable resistance
elements VR2 which correspond to the same second bit line BL2 and
are adjacent to each other are separated along the x-axis direction
by the distance d2. The variable resistance elements VR2 which
correspond to the same word line WL and are adjacent to each other
are separated from each other along the y-axis direction by the
distance d1. The variable resistance element VR2 which corresponds
to the m-th-row second bit line BL2 and the n-th-column word line
WL and the variable resistance element VR2 which corresponds to the
(m+1)-th-row second bit line BL2 and the n-th-column word line WL
are separated along the x-axis direction by the distance d2/2.
Accordingly, it is possible to set the distances between all the
variable resistance elements VR1 adjacent to each other and the
distances between all the variable resistance elements VR2 adjacent
to each other to be equal. Thus, a manufacturing fluctuation in a
manufacturing stage can be reduced in the embodiment compared to
the arrangement in which the distances between all the variable
resistance elements adjacent to each other are not equal, such as
in the case of the memory cells arranged in the rectangular
grid.
[0378] The variable resistance elements 63A and 63B have
opposite-orientation characteristics along the z-axis direction.
Specifically, the selection element layer 63A allows a current to
easily flow to the wiring layer 61 from the wiring layer 62A and a
current to hardly flow to the wiring layer 62A from the wiring
layer 61. The selection element layer 63B allows a current to
easily flow to the wiring layer 61 from the wiring layer 62B and a
current to hardly flow to the wiring layer 62B from the wiring
layer 61. Accordingly, it is possible to form the memory cell array
of the semiconductor storage device according to the seventh
embodiment in two layers in the z-axis direction. Thus, it is
possible to further improve a degree of integration of the memory
cells.
[0379] In addition, according to the seventh embodiment, it is
possible to similarly acquire other advantages mentioned in the
first embodiment.
14. Modification Examples
[0380] The storage devices described herein are not limited to the
forms mentioned in the above-described embodiments, and may be
embodied in a variety of changes. Although it is described in the
first embodiment to the sixth embodiment that the conductive layers
44 and 45 have the same section as that of the memory element layer
20 taken along the xy-plane, these embodiments are not limited
thereto. For example, the conductive layers may have sections
different from that of the memory element layer 20.
[0381] FIGS. 55A and 55B are sectional views for describing a
sectional structure of a memory cell of a semiconductor storage
device according to another modification example. FIGS. 55A and 55B
show sectional views of the memory cell cut by a plane parallel to
the z-axis direction. FIG. 55A shows a case where the magnetic
tunnel junction element MTJ is formed above the select transistor
ST, and FIG. 55B shows a case where the magnetic tunnel junction
element MTJ is formed under the select transistor ST.
[0382] As shown in FIG. 55A, a conductive layer 44A may include a
top surface of the diffusion layer 43 in the bottom surface. Also,
the conductive layer 44A may include a bottom surface of the memory
element layer 20 in the top surface. Likewise a conductive layer
45A may include a top surface of the memory element layer 20 in the
bottom surface. Also, the conductive layer 45A may include a bottom
surface of the wiring layer 33 in the top surface.
[0383] As shown in FIG. 55B, a conductive layer 44B may include a
top surface of the wiring layer 31 in the bottom surface. Also, the
conductive layer 44B may the bottom surface of the memory element
layer 20 in the top surface. Likewise a conductive layer 45B may
include the top surface of the memory element layer 20 in the
bottom surface. Also, the conductive layer 45B may include a bottom
surface of the diffusion layer 41 in the top surface.
[0384] The conductive layers are formed in this manner, and thus,
it is possible to increase a contact area between the magnetic
tunnel junction element MTJ and the select transistor ST.
Accordingly, it is possible to reduce a wiring resistance.
[0385] The above-described modification example may be similarly
applied to the seventh embodiment to the thirteenth embodiment.
Accordingly, it is possible to acquire the same advantages for the
seventh embodiment to the thirteenth embodiment.
[0386] Although it is described that the magnetic tunnel junction
element mentioned in the first embodiment to the sixth embodiment
and the modification examples thereof is a bottom-free type in
which the reference layer is formed above the memory layer, the
magnetic tunnel junction element may be a top-free type in which
the memory layer is formed above the reference layer.
[0387] Although it is described in the first embodiment to the
sixth embodiment and the modification examples thereof that the
MRAM using the magnetic tunnel junction element MTJ is used as the
semiconductor storage device, these embodiments are not limited
thereto. For example, these embodiments may be applied to the same
variable resistance memory as the MRAM, for example, the
semiconductor storage device including the element that stores data
by using a resistance change like ReRAM or PCRAM.
[0388] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the inventions. Indeed, the novel
embodiments described herein may be embodied in a variety of other
forms; furthermore, various omissions, substitutions and changes in
the form of the embodiments described herein maybe made without
departing from the spirit of the inventions. The accompanying
claims and their equivalents are intended to cover such forms or
modifications as would fall within the scope and spirit of the
inventions.
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