U.S. patent application number 15/696118 was filed with the patent office on 2018-09-27 for memory device and control method thereof.
This patent application is currently assigned to TOSHIBA MEMORY CORPORATION. The applicant listed for this patent is TOSHIBA MEMORY CORPORATION. Invention is credited to Kunifumi SUZUKI, Kazuhiko Yamamoto.
Application Number | 20180277205 15/696118 |
Document ID | / |
Family ID | 63295370 |
Filed Date | 2018-09-27 |
United States Patent
Application |
20180277205 |
Kind Code |
A1 |
SUZUKI; Kunifumi ; et
al. |
September 27, 2018 |
MEMORY DEVICE AND CONTROL METHOD THEREOF
Abstract
A memory device includes a control circuit configured to (i)
start a first application of a first voltage between a first
conductive layer and a third conductive layer, (ii) start a second
application of the first voltage between a second conductive layer
and the third conductive layer after a lapse of a first delay time
since the start of the first application of the first voltage, and
(iii) start an application of a second voltage, which is smaller
than the first voltage, between the first conductive layer and the
third conductive layer after a lapse of a second delay time since
the start of the second application of the first voltage between
the second conductive layer and the third conductive layer.
Inventors: |
SUZUKI; Kunifumi; (Yokkaichi
Mie, JP) ; Yamamoto; Kazuhiko; (Yokkaichi Mie,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TOSHIBA MEMORY CORPORATION |
Tokyo |
|
JP |
|
|
Assignee: |
TOSHIBA MEMORY CORPORATION
Tokyo
JP
|
Family ID: |
63295370 |
Appl. No.: |
15/696118 |
Filed: |
September 5, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 2013/0078 20130101;
H01L 45/146 20130101; G11C 2013/0092 20130101; H01L 45/1233
20130101; H01L 45/1253 20130101; G11C 13/0061 20130101; G11C
2213/77 20130101; H01L 45/1616 20130101; G11C 13/0069 20130101;
H01L 27/2463 20130101; H01L 45/08 20130101; H01L 45/085 20130101;
G11C 13/0097 20130101; G11C 13/0007 20130101; H01L 45/148 20130101;
G11C 2013/0088 20130101 |
International
Class: |
G11C 13/00 20060101
G11C013/00; H01L 45/00 20060101 H01L045/00; H01L 27/24 20060101
H01L027/24 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 24, 2017 |
JP |
2017-058673 |
Claims
1. A memory device comprising: a first conductive layer that
extends in a first direction; a second conductive layer that
extends in the first direction; a third conductive layer that
extends in a second direction intersecting the first direction; a
first variable resistance layer that is provided between the first
conductive layer and the third conductive layer and comprises a
first layer comprising a first semiconductor, a first semiconductor
oxide, or a first metal oxide comprising a first metal, and a
second layer comprising a second metal oxide comprising a second
metal different from the first metal; a second variable resistance
layer that is provided between the second conductive layer and the
third conductive layer and comprises a third layer comprising a
second semiconductor, a second semiconductor oxide, or a third
metal oxide comprising a third metal, and a fourth layer comprising
a fourth metal oxide comprising a fourth metal different from the
third metal; and a control circuit configured to control one or
more voltages which are applied to the first conductive layer, the
second conductive layer, and the third conductive layer, wherein
the control circuit is configured to (i) start a first application
of a first voltage between the first conductive layer and the third
conductive layer, (ii) start a second application of the first
voltage between the second conductive layer and the third
conductive layer after a lapse of a first delay time since the
start of the first application of the first voltage, in a state in
which the first voltage is applied between the first conductive
layer and the third conductive layer, and (iii) start an
application of a second voltage, which is smaller than the first
voltage, between the first conductive layer and the third
conductive layer after a lapse of a second delay time since the
start of the second application of the first voltage between the
second conductive layer and the third conductive layer, in a state
in which the first voltage is applied between the second conductive
layer and the third conductive layer.
2. The memory device according to claim 1, wherein the first
voltage and the second voltage have a same polarity, and the second
voltage is greater in magnitude than about half of a magnitude of
the first voltage.
3. The memory device according to claim 1, wherein the first delay
time is about 100 nanoseconds or more.
4. The memory device according to claim 1, wherein a sum of the
first delay time and the second delay time is equal to a duration
that is about ten times as long, or more, than the first delay
time.
5. The memory device according to claim 1, wherein a sum of the
first delay time and the second delay time is equal to a duration
of about 10 microseconds or more.
6. The memory device according to claim 1, wherein the control
circuit is configured to control the first delay time based on an
amount of a current which flows through the third conductive
layer.
7. The memory device according to claim 1, wherein the control
circuit is configured to compare an amount of a current which flows
through the third conductive layer with a reference value and is
configured to control the first delay time based on a result of the
comparison.
8. The memory device according to claim 1, wherein the second metal
and the fourth metal are each at least one element selected from
the group consisting of titanium, niobium, tantalum, and
tungsten.
9. The memory device according to claim 1, wherein the first
semiconductor and the second semiconductor are each silicon or
germanium, the first semiconductor oxide and the second
semiconductor oxide are each a silicon oxide or a germanium oxide,
and the first metal and the third metal are each at least one
element selected from the group consisting of aluminum, hafnium,
and zirconium.
10. The memory device according to claim 1, wherein a resistivity
of the first layer and the third layer is higher than a resistivity
of the second layer and the fourth layer.
11. A control method of a memory device, comprising: providing the
memory device that includes a first conductive layer that extends
in a first direction, a second conductive layer that extends in the
first direction, a third conductive layer that extends in a second
direction intersecting the first direction, a first variable
resistance layer that is provided between the first conductive
layer and the third conductive layer and comprises a first layer
comprising a first semiconductor, a first semiconductor oxide, or a
first metal oxide comprising a first metal, and a second layer
comprising a second metal oxide comprising a second metal different
from the first metal, and a second variable resistance layer that
is provided between the second conductive layer and the third
conductive layer and comprises a third layer including a second
semiconductor, a second semiconductor oxide, or a third metal oxide
comprising a third metal, and a fourth layer comprising a fourth
metal oxide comprising a fourth metal different from the third
metal; starting a first application of a first voltage between the
first conductive layer and the third conductive layer; starting a
second application of the first voltage between the second
conductive layer and the third conductive layer after a lapse of a
first delay time since the start of the first application of the
first voltage, in a state in which the first voltage is applied
between the first conductive layer and the third conductive layer;
and starting an application of a second voltage, which is smaller
than the first voltage, between the first conductive layer and the
third conductive layer after a lapse of a second delay time after
the start of the second application of the first voltage between
the second conductive layer and the third conductive layer, in a
state in which the first voltage is applied between the second
conductive layer and the third conductive layer.
12. The control method of the memory device according to claim 11,
wherein the first voltage and the second voltage have a same
polarity, and the second voltage is greater in magnitude than about
half of a magnitude of the first voltage.
13. The control method of the memory device according to claim 11,
wherein the first delay time is about 100 nanoseconds or more.
14. The control method of the memory device according to claim 11,
wherein a sum of the first delay time and the second delay time is
equal to a duration that is about ten times as long, or more, than
the first delay time.
15. The control method of the memory device according to claim 11,
wherein a sum of the first delay time and the second delay time is
equal to a duration of about 10 microseconds or more.
16. The control method of the memory device according to claim 11,
comprising controlling the first delay time based on an amount of a
current which flows through the third conductive layer.
17. The control method of the memory device according to claim 11,
comprising comparing an amount of a current which flows through the
third conductive layer with a reference value and controlling the
first delay time based on a result of the comparison.
18. The control method of the memory device according to claim 11,
wherein the second metal and the fourth metal are each at least one
element selected from the group consisting of titanium, niobium,
tantalum, and tungsten.
19. The control method of the memory device according to claim 11,
wherein the first semiconductor and the second semiconductor are
each silicon or germanium, the first semiconductor oxide and the
second semiconductor oxide are each a silicon oxide or a germanium
oxide, and the first metal and the third metal are each at least
one element selected from the group consisting of aluminum,
hafnium, and zirconium.
20. The control method of the memory device according to claim 11,
wherein a resistivity of the first layer and the third layer is
higher than a resistivity of the second layer and the fourth layer.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit of and priority to
Japanese Patent Application No. 2017-058673, filed Mar. 24, 2017,
the entire contents of which are incorporated herein by
reference.
FIELD
[0002] Embodiments described herein relate generally to memory
devices and control methods thereof.
BACKGROUND
[0003] Some resistance-change type memory devices cause a memory
cell transition between a high-resistance state and a
low-resistance state by applying a current to a variable resistance
layer of the memory cell. For example, if the high-resistance state
is defined as data "0" and the low-resistance state is defined as
data "1", the memory cell is capable of storing 1-bit data of "0"
or "1". Rewriting the data of the memory cell in a short time can
help to achieve enhancement of the speed of the operation of the
resistance-change type memory.
DESCRIPTION OF THE DRAWINGS
[0004] FIG. 1 is a block diagram showing one or more embodiments of
a memory cell array and a peripheral circuit of a memory device
according to a first aspect.
[0005] FIG. 2A and FIG. 2B are each a schematic sectional view of
one or more embodiments of a memory cell of the memory device
according to the first aspect.
[0006] FIG. 3 is an explanatory diagram of one or more embodiments
of a control method of the memory device according to the first
aspect.
[0007] FIG. 4A and FIG. 4B are explanatory diagrams of workings and
effects of one or more embodiments of the memory device according
to the first aspect.
[0008] FIG. 5A and FIG. 5B are explanatory diagrams of workings and
effects of a comparative memory device.
[0009] FIG. 6A and FIG. 6B are explanatory diagrams of workings and
effects of one or more embodiments of the memory device according
to the first aspect.
[0010] FIG. 7 is a block diagram of a memory cell array and a
peripheral circuit of one or more embodiments of a memory device
according to a second aspect.
[0011] FIG. 8A and FIG. 8B are explanatory diagrams of workings and
effects of one or more embodiments of the memory device according
to the second aspect.
DETAILED DESCRIPTION
[0012] One or more example embodiments provide for a memory device
that can enhance the speed of an operation.
[0013] In general, according to one or more embodiments, a memory
device includes a first conductive layer that extends in a first
direction, a second conductive layer that extends in the first
direction, and a third conductive layer that extends in a second
direction intersecting the first direction. The memory device
further includes a first variable resistance layer that is provided
between the first conductive layer and the third conductive layer
and includes a first layer including a first semiconductor, a first
semiconductor oxide, or a first metal oxide containing a first
metal and a second layer including a second metal oxide containing
a second metal different from the first metal. The memory device
further includes a second variable resistance layer that is
provided between the second conductive layer and the third
conductive layer and includes a third layer including a second
semiconductor, a second semiconductor oxide, or a third metal oxide
containing a third metal and a fourth layer including a fourth
metal oxide containing a fourth metal different from the third
metal. The memory device yet further includes a control circuit
that controls voltages which are applied to the first conductive
layer, the second conductive layer, and the third conductive layer.
The control circuit is configured to (i) start a first application
of a first voltage between the first conductive layer and the third
conductive layer, (ii) start a second application of the first
voltage in a state in which the first voltage is applied between
the first conductive layer and the third conductive layer between
the second conductive layer and the third conductive layer after a
lapse of a first delay time since the start of the application of
the first voltage, and (iii) start an application of a second
voltage, which is smaller than the first voltage, between the first
conductive layer and the third conductive layer in a state in which
the first voltage is applied between the second conductive layer
and the third conductive layer after a lapse of a second delay time
since the start of the application of the first voltage between the
second conductive layer and the third conductive layer.
[0014] Hereinafter, one or more embodiments will be described with
reference to the drawings. In at least some of the following
description, the same or similar components, for example, will be
identified with the same reference characters, and redundant
description thereof will be omitted as appropriate.
[0015] Hereinafter, memory devices of one or more embodiments will
be described with reference to the drawings.
(First Aspect)
[0016] One or more embodiments of a control method of the memory
device according to the first aspect is a control method of a
memory device that includes a first conductive layer that extends
in a first direction, a second conductive layer that extends in the
first direction, a third conductive layer that extends in a second
direction intersecting the first direction, a first variable
resistance layer that is provided between the first conductive
layer and the third conductive layer and includes a first layer
including a first semiconductor, a first semiconductor oxide, or a
first metal oxide containing a first metal and a second layer
including a second metal oxide containing a second metal different
from the first metal, and a second variable resistance layer that
is provided between the second conductive layer and the third
conductive layer and includes a third layer including a second
semiconductor, and a second semiconductor oxide, or a third metal
oxide containing a third metal and a fourth layer including a
fourth metal oxide containing a fourth metal different from the
third metal. The control method includes starting a first
application of a first voltage between the first conductive layer
and the third conductive layer, starting a second application of
the first voltage between the second conductive layer and the third
conductive layer in a state in which the first voltage is applied
between the first conductive layer and the third conductive layer
after a lapse of a first delay time since the start of the
application of the first voltage, and starting an application of a
second voltage, which is smaller than the first voltage, between
the first conductive layer and the third conductive layer in a
state in which the first voltage is applied between the second
conductive layer and the third conductive layer after a lapse of a
second delay time since the start of the application of the first
voltage between the second conductive layer and the third
conductive layer.
[0017] FIG. 1 is a block diagram of one or more embodiments of a
memory cell array and a peripheral circuit of the memory device
according to the first aspect. FIG. 2A and FIG. 2B are each a
schematic sectional view of one or more embodiments of a memory
cell of the memory device according to the first aspect. FIG. 2A
depicts a cross section of one memory cell MC1 depicted in a circle
indicated by a dotted line in the memory cell array shown in FIG.
1. FIG. 2B depicts a cross section of one memory cell MC2 depicted
in a circle indicated by a dotted line in the memory cell array
shown in FIG. 1.
[0018] A memory cell array 100 of one or more embodiments of the
memory device according to the first aspect includes a plurality of
word lines WL1, WL2, WL3, WL4, WL5, WL6, WL7, WL8, and WL9 (WL1 to
WL9) extending in a first direction and a plurality of bit lines
BL1, BL2, BL3, BL4, BL5, BL6, BL7, BL8, and BL9 (BL1 to BL9)
extending in a second direction intersecting the first direction
(e.g. a second direction orthogonal to the first direction) . The
plurality of word lines WL1 to WL9 and the plurality of bit lines
BL1 to BL9 intersect at approximately right angles, for example
(e.g. each of the word lines WL1 to WL9 intersects at least one of
the bit lines BL1 through BL9 at an approximately 90 degree angle,
at an approximately 89 degree angle, at an approximately 88 degree
angle, at an approximately 87 degree angle, at an approximately 86
degree angle, or at an approximately 8 degree angle).
[0019] The plurality of word lines WL1 to WL9 and the plurality of
bit lines BL1 to BL9 are provided, for example, on a semiconductor
substrate 101 with an insulating layer placed therebetween. The bit
lines BL1 to BL9 are provided in a layer above the word lines WL1
to WL9, for instance.
[0020] Around the memory cell array 100, a peripheral circuit 102
(a control circuit) is provided. The peripheral circuit 102
includes, for example, a word line control circuit 102a, a bit line
control circuit 102b, and a central control circuit 102c. The
peripheral circuit 102 does not necessarily have to be disposed
around the memory cell array 100. For instance, part of the
peripheral circuit 102 may be disposed above or below the memory
cell array 100. Alternatively, the whole of the peripheral circuit
102 may be disposed above or below the memory cell array 100.
[0021] In regions in which the word lines WL1 to WL9 and the bit
lines BL1 to BL9 intersect, a plurality of memory cells are
provided. One or more embodiments of the memory device according to
the first aspect is a resistance-change type memory with a
crosspoint structure. One or more embodiments of the memory device
according to the first aspect has a two-dimensional structure. The
memory cell is a two-terminal resistance variable element. One or
more embodiments of the memory device according to the first aspect
is a vacancy-modulated conductive oxide (VMCO) memory that
implements a vacancy-modulated conductive oxide in a variable
resistance layer.
[0022] The plurality of word lines WL1 to WL9 are electrically
connected to the word line control circuit 102a. Moreover, the
plurality of bit lines BL1 to BL9 are electrically connected to the
bit line control circuit 102b. The central control circuit 102c is
electrically connected to the word line control circuit 102a and
the bit line control circuit 102b.
[0023] The word line control circuit 102a and the bit line control
circuit 102b are configured to, for example, select an intended
memory cell and perform writing of data to the memory cell, reading
of data from the memory cell, erasing of data of the memory cell,
and so forth. At the time of reading of data, the data of the
memory cell determined based on the amount of the current that
flows between the word lines WL1 to WL9 and the bit lines BL1 to
BL9. For instance, the central control circuit 102c is configured
to determine the polarity of data by determining the amount of the
current. For example, the central control circuit 102c determines
whether the data is "0" or "1".
[0024] The word line control circuit 102a, the bit line control
circuit 102b, and the central control circuit 102c are configured
with an electronic circuit using a semiconductor device which is
formed on the semiconductor substrate 101, for example. The
semiconductor device is, for instance, a transistor, a diode, or a
capacitor.
[0025] As depicted in FIG. 2A, the memory cell MC1 includes a lower
electrode 10, an upper electrode 20, and a variable resistance
layer 30 (a first variable resistance layer).
[0026] The lower electrode 10 is, for example, part of the word
line WL1 (a first conductive layer). The lower electrode 10
includes, for example, a metal. The lower electrode 10 includes
titanium nitride (TiN) or tungsten (W), for example.
[0027] The upper electrode 20 is, for example, part of the bit line
BL1 (a third conductive layer). The upper electrode 20 includes,
for example, a metal. The upper electrode 20 includes titanium
nitride (or tungsten, for example.
[0028] The variable resistance layer 30 is sandwiched between the
lower electrode 10 and the upper electrode 20. The variable
resistance layer 30 is provided between the word line WL1 (the
first conductive layer) and the bit line BL1 (the third conductive
layer). The variable resistance layer 30 includes a high-resistance
layer 30a (a first layer) and a low-resistance layer 30b (a second
layer).
[0029] The film thickness of the variable resistance layer 30 is,
for example, about 5 nm or more, and/or about 25 nm or less. The
variable resistance layer 30 is a film formed by atomic layer
deposition (ALD), for instance.
[0030] The high-resistance layer 30a includes a first
semiconductor, a first semiconductor oxide, or a first metal oxide
including a first metal. The high-resistance layer 30a is, for
example, an amorphous semiconductor, an amorphous semiconductor
oxide, or an amorphous metal oxide.
[0031] The high-resistance layer 30a is, for example, the first
semiconductor, or is the first semiconductor oxide. The
high-resistance layer 30a includes silicon or germanium, for
instance. The high-resistance layer 30a is, for example, an
amorphous silicon.
[0032] The high-resistance layer 30a includes, for example, the
first metal oxide including the first metal. The first metal is,
for instance, at least one element selected from the group
consisting of aluminum (Al), hafnium (Hf), and zirconium (Zr). The
high-resistance layer 30a is an aluminum oxide, a hafnium oxide, or
a zirconium oxide, for example.
[0033] The film thickness of the high-resistance layer 30a is, for
example, about 2 nm or more, and/or about 10 nm or less.
[0034] The low-resistance layer 30b includes a second metal oxide
containing a second metal different from the first metal. The
second metal is, for example, at least one element selected from
the group consisting of titanium (Ti), niobium (Nb), tantalum (Ta),
and tungsten. The low-resistance layer 30b includes, for instance,
a titanium oxide, a niobium oxide, a tantalum oxide, or a tungsten
oxide. The low-resistance layer 30b includes, for example, the at
least one element described above (e.g. is about 50% or more, by
atomic weight, the at least one element described above).
[0035] The resistivity of the low-resistance layer 30b is lower
than the resistivity of the high-resistance layer 30a. At least
part of the low-resistance layer 30b is a crystalline substance. As
a result of the metal oxide of the low-resistance layer 30b being
crystallized, the resistivity is low.
[0036] The film thickness of the low-resistance layer 30b is, for
example, about 3 nm or more, and/or about 15 nm or less.
[0037] As depicted in FIG. 2B, the memory cell MC2 includes a lower
electrode 11, an upper electrode 21, and a variable resistance
layer 31 (a second variable resistance layer).
[0038] The lower electrode 11 is, for example, part of the word
line WL2. The upper electrode 21 is, for example, part of the bit
line BL1.
[0039] The variable resistance layer 31 is sandwiched between the
lower electrode 11 and the upper electrode 21. The variable
resistance layer 31 is provided between the word line WL2 (a second
conductive layer) and the bit line BL1 (the third conductive
layer). The variable resistance layer 31 includes a high-resistance
layer 31a (a third layer) and a low-resistance layer 31b (a fourth
layer).
[0040] The lower electrode 11, the upper electrode 21, the variable
resistance layer 31, the high-resistance layer 31a, and the
low-resistance layer 31b have respectively include similar
materials and have similar structures as the lower electrode 10,
the upper electrode 20, the variable resistance layer 30, the
high-resistance layer 30a, and the low-resistance layer 30b. A
second semiconductor of the high-resistance layer 31a corresponds
to the first semiconductor of the high-resistance layer 30a. A
third metal of the high-resistance layer 31a corresponds to the
first metal of the high-resistance layer 30a. A fourth metal of the
low-resistance layer 31b corresponds to the second metal of the
low-resistance layer 30b.
[0041] The variable resistance layer 30 and the variable resistance
layer 31 may be continuous layers.
[0042] By applying a current to the variable resistance layer 30 of
the memory cell MC1, the variable resistance layer 30 changes from
a high-resistance state to a low-resistance state or from the
low-resistance state to the high-resistance state. For example, the
high-resistance state is defined as data "0" and the low-resistance
state is defined as data "1". The memory cell MC1 is capable of
storing 1-bit data of "0" or "1". A change from the high-resistance
state to the low-resistance state is referred to as a set
operation, and a change from the low-resistance state to the
high-resistance state is referred to as a reset operation. By the
set operation and the reset operation, the data of the memory cell
is rewritten.
[0043] By the application of a current to the variable resistance
layer 30, the amount of oxygen vacancy and/or the oxygen vacancy
distribution in the low-resistance layer 30b changes. With a change
in the amount of oxygen vacancy or the oxygen vacancy distribution
in the low-resistance layer 30b, the conductivity of the variable
resistance layer 30 changes. The low-resistance layer 30b is a
so-called vacancy-modulated conductive oxide.
[0044] In one or more embodiments of the VMCO memory using a
vacancy-modulated conductive oxide according to the first aspect,
the application of a higher voltage or a longer application of a
voltage is implemented for the reset operation as compared to the
set operation.
[0045] Next, the function of the peripheral circuit 102 and a
control method using the peripheral circuit 102 will be
described.
[0046] FIG. 3 is an explanatory diagram of one or more embodiments
of a control method of the memory device according to the first
aspect. FIG. 3 is a timing chart of voltages which are applied to
the bit line BL1, the word line WL1, the word line WL2, and the
word line WL3.
[0047] FIG. 3 is a timing chart of the reset operation of the
memory cell MC1 between the word line WL1 and the bit line BL1, the
memory cell MC2 between the word line WL2 and the bit line BL1, and
a memory cell MC3 between the word line WL3 and the bit line BL1.
FIG. 3 depicts, from top to bottom, a voltage which is applied to
the bit line BL1, a voltage which is applied to the word line WL1,
a voltage which is applied to the word line WL2, and a voltage
which is applied to the word line WL3.
[0048] FIG. 3 depicts a case in which the reset operation is
continuously performed on the memory cells MC1, MC2, and MC3 which
are provided between one bit line BL1 and the three word lines WL1,
WL2, and WL3, respectively, which intersect the bit line BL1.
[0049] At the time of operation of the memory device, a first
low-level voltage, a first high-level voltage, and a first
intermediate voltage, for example, are applied to the bit line BL1.
The first intermediate voltage is a voltage at an intermediate
level between the first high-level voltage and the first low-level
voltage. Moreover, a second low-level voltage, a second high-level
voltage, and a second intermediate voltage, for example, are
applied to the word lines WL1, WL2, and WL3. The second
intermediate voltage is a voltage at an intermediate level between
the second high-level voltage and the second low-level voltage.
[0050] Description will be given using the memory cell MC1 as an
example. At the time of the reset operation of the memory cell MC1,
a reset voltage is applied between the word line WL1 and the bit
line BL1. The reset voltage is, for example, a difference between
the first high-level voltage of the bit line BL1 and the second
low-level voltage of the word line WL1.
[0051] At the time of the set operation of the memory cell MC1, a
set voltage is applied between the word line WL1 and the bit line
BL1. The set voltage is, for example, a difference between the
first low-level voltage of the bit line BL1 and the second
high-level voltage of the word line WL1. To the memory cell MC1, a
voltage whose polarity is opposite to that of a voltage which is
applied at the time of the reset operation is applied. One or more
embodiments of the memory device according to the first aspect is a
bipolar device in which voltages of different polarities are
applied at the time of the set operation and at the time of the
reset operation.
[0052] When the memory cell MC1 is not selected, that is, when
neither the reset operation nor the set operation are being
performed, any of a difference between the first high-level voltage
of the bit line BL1 and the second intermediate voltage of the word
line WL1, a difference between the first low-level voltage of the
bit line BL1 and the second intermediate voltage of the word line
WL1, and a difference between the first intermediate voltage of the
bit line BL1 and the second intermediate voltage of the word line
WL1 can be applied.
[0053] Hereinafter, to simplify the description, the first
low-level voltage and the second low-level voltage are assumed to
be 0 (zero) volts (V). However, in one or more embodiments the
first low-level voltage and the second low-level voltage can differ
from each other. Moreover, the first intermediate voltage and the
second intermediate voltage are assumed to be equal and will be
referred to simply as an intermediate voltage. However, in one or
more embodiments the first intermediate voltage and the second
intermediate voltage can differ from each other. In the following
description, the reset voltage which is a difference between the
first high-level voltage of the bit line BL1 and the second
low-level voltage of the word line WL1 is equal to the first
high-level voltage of the bit line BL1, under the above-mentioned
assumption that the second low-level voltage of the word line WL1
is zero V.
[0054] At first, the intermediate voltage (Vint) is applied to the
bit line BL1, the word line WL1, the word line WL2, and the word
line WL3. The intermediate voltage (Vint) is, for example, a
voltage between the reset voltage (Vreset) and 0 V. The reset
voltage is, for instance, about 3 V or more, and/or about 8V or
less, and the intermediate voltage is, for instance, about 1.5 V or
more, and/or about 4 V or less.
[0055] Next, the reset voltage is applied to the bit line BL1 at
time t1.
[0056] Then, the voltage of the word line WL1 is set at 0 V at time
t2. At time t2, a first voltage (V1) is applied between the word
line WL1 and the bit line BL1. The first voltage coincides with the
reset voltage at this time. The reset operation of the memory cell
MC1 starts at time t2.
[0057] Next, the voltage of the word line WL2 is set to 0 V at time
t3. The time between time t2 and time t3 is a first delay time ta.
The first delay time ta is, for example, about 100 nanoseconds or
more, and/or about 5 microseconds or less.
[0058] At time t3, the first voltage (V1) is applied between the
word line WL2 and the bit line BL1. The reset operation of the
memory cell MC2 starts at time t3.
[0059] After a lapse of the first delay time ta since the start of
the application of the first voltage between the word line WL1 and
the bit line BL1, the first voltage is applied between the word
line WL2 and the bit line BL1 in a state in which the first voltage
is applied between the word line WL1 and the bit line BL1 . That
is, the reset operation of the memory cell MC2 starts at time t3 in
a state in which the reset operation of the memory cell MC1 is
being performed.
[0060] Next, the voltage of the word line WL3 is set at 0 V at time
t4.
[0061] At time t4, the reset voltage (e.g. the first voltage (V1))
is applied between the word line WL3 and the bit line BL1. The
reset operation of the memory cell MC3 starts at time t4.
[0062] The reset voltage is applied between the word line WL3 and
the bit line BL1 in a state in which the reset voltage is applied
between the word line WL1 and the bit line BL1 and the reset
voltage is applied between the word line WL2 and the bit line BL1.
That is, the reset operation of the memory cell MC3 starts at time
t4 in a state in which the reset operations of the memory cell MC1
and the memory cell MC2 are being performed.
[0063] Next, the voltage of the word line WL1 is set at the
intermediate voltage at time t5. The time between time t3 and time
t5 is a second delay time tb.
[0064] At time t5, a second voltage (V2) is applied between the
word line WL1 and the bit line BL1. The second voltage coincides
with a difference between the reset voltage and the intermediate
voltage. The reset operation of the memory cell MC1 ends at time
t5.
[0065] The sum of the first delay time ta and the second delay time
tb is the reset operation time of the memory cell MC1. The sum of
the first delay time ta and the second delay time tb is a duration
that is about ten times as long, or more, than the first delay
time, for example. The sum of the first delay time to and the
second delay time tb is, for example, about 10 microseconds or
more, and/or about 200 microseconds or less.
[0066] The second voltage is applied between the word line WL1 and
the bit line BL1 in a state in which the reset voltage is applied
between the word line WL2 and the bit line BL1 and the reset
voltage is applied between the word line WL3 and the bit line BL1.
That is, the reset operation of the memory cell MC1 ends at time t5
in a state in which the reset operations of the memory cell MC2 and
the memory cell MC3 are being performed.
[0067] Next, the voltage of the word line WL2 is set at the
intermediate voltage at time t6. The reset operation of the memory
cell MC2 ends at time t6 in a state in which the reset operation of
the memory cell MC3 is being performed.
[0068] Then, the voltage of the word line WL3 is set at the
intermediate voltage at time t7. The reset operation of the memory
cell MC3 ends at time t7.
[0069] The peripheral circuit 102 is configured to perform the
above-described reset operations. The reset operations described
above are controlled by using the peripheral circuit 102.
[0070] Hereinafter, the workings and effects of one or more
embodiments according to the first aspect will be described.
[0071] In some implementations it may be desirable to rewrite data
of a plurality of memory cells collectively performed (e.g.
concurrently performed) in order to enhance the speed of the memory
device. However, if operations to rewrite data of a plurality of
memory cells are collectively performed, the amount of the current
required for the rewriting operation is increased. If the amount of
the current is increased, for example, the current may reach the
limit of a drive current of the peripheral circuit 102, making
rewriting of data challenging.
[0072] In the VMCO memory, the application of a higher voltage or a
longer application of a voltage may be used at the time of the
reset operation to rewrite the low-resistance state to the
high-resistance state, as compared to the set operation to rewrite
the high-resistance state to the low-resistance state. Thus,
performing the reset operation of a plurality of memory cells at
high speed can be challenging.
[0073] FIG. 4A and FIG. 4B are diagrams explaining the workings and
effects of one or more embodiments of the memory device according
to the first aspect. FIG. 4A depicts a voltage waveform which is
applied to a memory cell of the VMCO memory at the time of the
reset operation. FIG. 4B depicts a current waveform which flows
through the memory cell at the time of application of the voltage
shown in FIG. 4A.
[0074] As depicted in FIG. 4A, the reset voltage is applied to the
memory cell as a trapezoidal voltage pulse. In this case, as
depicted in FIG. 4B, a large initial current having a peak form
starts to flow immediately after the start of the application of
the voltage. The peak of this current is referred to as a peak
current (Ipeak). Moreover, a lower and stable current that may flow
after the initial flow of the large current is referred to as a
flat current (Iflat). The flat current need not be perfectly
constant.
[0075] In less than about 2 microseconds (e.g. in less than about
1.9 microsecond, in less that about 1.8 microseconds, or in less
than about 1.7 microseconds), for example, after the start of the
application of the voltage, the current value is substantially
stabilized at a low value (Iflat). The value of the peak current
(Ipeak) is, for example, equal to about ten times or more than the
value of the flat current (Iflat).
[0076] FIG. 5A and FIG. 5B are diagrams explaining the workings and
effects of one or more embodiments of the memory device according
to the first aspect. FIG. 5A and FIG. 5B are explanatory diagrams
of a control method of a comparative memory device. FIG. 5A is a
timing chart of voltages which are applied to the bit line BL1, the
word line WL1, the word line WL2, and the word line WL3. FIG. 5B is
a diagram depicting a current waveform which flows through the bit
line BL1.
[0077] The control method of the comparative memory device
collectively (e.g. simultaneously) performs the reset operation on
the memory cells MC1, MC2, and MC3 which are provided between one
bit line BL1 and the three word lines WL1, WL2, and WL3,
respectively, which intersect the bit line BL1.
[0078] At first, the intermediate voltage (Vint) is applied to the
bit line BL1, the word line WL1, the word line WL2, and the word
line WL3.
[0079] Next, at time t1, the reset voltage is applied to the bit
line BL1.
[0080] Then, at time t2, the voltages of the word line WL1, the
word line WL2, and the word line WL3 are collectively set at 0 V.
At time t2, the reset voltage is applied between the word line WL1
and the bit line BL1, between the word line WL2 and the bit line
BL1, and between the word line WL3 and the bit line BL1 at the same
time.
[0081] At time t2, the reset operations of the memory cell MC1, the
memory cell MC2, and the memory cell MC3 start at the same
time.
[0082] At time t3, the voltages of the word line WL1, the word line
WL2, and the word line WL3 are collectively set at the intermediate
voltage. The reset operations of the memory cell MC1, the memory
cell MC2, and the memory cell MC3 end at time t3 at the same
time.
[0083] As depicted in FIG. 5B, a large peak current flows
immediately after the collective start of the reset operations of
the memory cell MC1, the memory cell MC2, and the memory cell MC3.
This is caused by the characteristics of a current flowing through
one memory cell, described above in reference to FIG. 4A and FIG.
4B.
[0084] When a plurality of memory cells are collectively made to
perform the reset operation, a very large peak current flows
because the peak currents of the plurality of memory cells are
added together.
[0085] FIG. 6A and FIG. 6B are diagrams explaining the workings and
effects of one or more embodiments of the memory device according
to the first aspect. FIG. 6A and FIG. 6B are explanatory diagrams
of one or more embodiments of the control method of the memory
device according to the first aspect. The timing chart shown in
FIG. 6A is similar to the timing chart shown in FIG. 3. FIG. 6B is
a diagram depicting a current waveform which flows through the bit
line BL1.
[0086] In one or more embodiments according to the first aspect, as
depicted in FIG. 6A, the reset operations of the memory cell MC1,
the memory cell MC2, and the memory cell MC3 are started by
shifting the times at which the reset operations are started (e.g.
by the first delay time ta). As a result, as depicted in FIG. 6B, a
peak current is divided into three peaks. Thus, the magnitude of
the peak current for each peak is smaller than the magnitude of the
peak current for the peak of the comparative example shown in FIG.
5B. In other words, the maximum amount of the current that flows
through the bit line BL1 is reduced.
[0087] In order to curb a current at the time of the reset
operations of a plurality of memory cells, performing reset
operation on the plurality of memory cells one at a time is
possible. However, in this case, a long time is required for the
reset operation and enhancement of the speed of the memory device
may be challenging.
[0088] In one or more embodiments according to the first aspect, by
shifting the start times of the reset operations, the peak current
at the time of the reset operation is curbed, whereby the reset
operations of a plurality of memory cells can be concurrently
performed. Therefore, enhancement of the speed of the memory device
can be achieved.
[0089] In one or more embodiments, the first delay time ta, that
is, the time from the start of the reset operation of the memory
cell MC1 to the start of the reset operation of the memory cell MC2
is about 100 nanoseconds or more, and/or about 5 microseconds or
less. If the first delay time ta falls below the above range, there
is a possibility that the peak current of the memory cell MC1 and
the peak current of the memory cell MC2 overlap one another, which
can result in an increase in the peak current at the time of the
reset operation. Moreover, if the first delay time ta exceeds the
above range, there is a possibility that the time required for the
reset operations of the memory cell MC1 and the memory cell MC2
becomes too long, which can inhibit enhancement of the speed of the
memory device.
[0090] In one or more embodiments, the sum of the first delay time
ta and the second delay time tb, that is, the reset operation time
of the memory cell MC1 is about 10 microseconds or more, and/or
about 200 microseconds or less. Furthermore, the sum of the first
delay time ta and the second delay time tb is a duration that is
about ten times as long, or more, than the first delay time ta. If
the sum of the first delay time ta and the second delay time tb
falls below the above range, there is a possibility that sufficient
rewriting of data will not be performed. Moreover, if the sum of
the first delay time ta and the second delay time tb exceeds the
above range, there is a possibility that the time required for the
reset operation becomes too long, which can inhibit enhancement of
the speed of the memory device.
[0091] In one or more embodiments, the first voltage (V1) and the
second voltage (V2) are the same in polarity and the second voltage
(V2) is greater in magnitude than about half of the magnitude of
the first voltage (V1). In other words, a difference between the
reset voltage and the intermediate voltage of the word line WL1 is
greater than the intermediate voltage of the word line WL1.
[0092] With the above configuration, a voltage which is applied to
a non-selected memory cell when the polarity thereof is the same as
the polarity of a voltage in the set operation is smaller than a
voltage which is applied to a non-selected memory cell when the
polarity thereof is the same as the polarity of a voltage in the
reset operation. In one or more embodiments, the set voltage for
the set operation is lower than the reset voltage for the reset
operation. Therefore, with the configuration described above, a
memory cell is prevented from being erroneously rewritten.
[0093] As described above, according to the first aspect, by
concurrently performing the reset operation on a plurality of
memory cells, enhancement of the speed of the memory device can be
achieved. By staggering the start times of concurrently performed
reset operations, enhancement of the speed of the memory device can
be achieved.
(Second Aspect)
[0094] One or more embodiments of a memory device according to the
second aspect differ from one or more embodiments according to the
first aspect in that a control circuit is configured to control a
first delay time based on the amount of the current which flows
through a third conductive layer. Moreover, one or more embodiments
of a control method according to the second aspect differ from one
or more embodiments according to the first aspect in that the
control method controls the first delay time based on the amount of
the current which flows through the third conductive layer.
Hereinafter, redundant description already provided above in
reference to the first aspect will be omitted.
[0095] FIG. 7 is a block diagram of a memory cell array and a
peripheral circuit of one or more embodiments of the memory device
according to the second aspect. A peripheral circuit 102 includes a
delay time control circuit 102d.
[0096] The delay time control circuit 102d controls timing with
which voltages are applied to the word lines WL1 to WL9 based on
the amount of the current which flows through the bit lines BL1 to
BL9.
[0097] FIG. 8A and FIG. 8B are diagrams explaining the workings and
effects of one or more embodiments of the memory device according
to the second aspect. FIG. 8A and FIG. 8B are explanatory diagrams
of one or more embodiments of the control method of the memory
device according to the second aspect. A timing chart shown in FIG.
8A is similar to the timing charts shown in FIG. 3 and FIG. 6A.
FIG. 8B is a diagram depicting a current waveform which flows
through the bit line BL1.
[0098] The delay time control circuit 102d controls (e.g. sets or
determines) the first delay time ta, that is, the time from the
start of the reset operation of the memory cell MC1 to the start of
the reset operation of the memory cell MC2 based on a current which
flows through the bit line BL1. Specifically, for example, the
delay time control circuit 102d monitors a current flowing through
the bit line BL1 and, after time t2, when the current of the bit
line BL1 is reduced from a high value (e.g. a maximum value) and
reaches a predetermined reference current (Iref), the delay time
control circuit 102d sets the word line WL2 of the memory cell MC2
to 0 V. As described above, the delay time control circuit 102d
controls the first delay time ta so that the reset operation of the
memory cell MC2 is started after the current flowing through the
bit line BL1 exceeds a peak.
[0099] For instance, the delay time control circuit 102d is
configured to compare the amount of the current which flows through
the bit line BL1 with a predetermined reference value
(corresponding to a magnitude of the reference current (Iref)). The
predetermined reference value is a value smaller than the amount of
a peak current which can flow through the memory cell MC1. The
delay time control circuit 102d controls the first delay time ta
based on the result of comparison.
[0100] By controlling the first delay time ta based on the current
which flows through the bit line BL1, the time from the start of
the reset operation of the memory cell MC1 to the start of the
reset operation of the memory cell MC2 can be reduced, because, for
example, providing a margin in the first delay time ta can be
omitted.
[0101] As described above, in one or more embodiments according to
the second aspect, as in one or more embodiments according to the
first aspect, by concurrently performing the reset operation on a
plurality of memory cells, enhancement of the speed of the memory
device can be achieved. Furthermore, the time from the start of the
reset operation of the memory cell MC1 to the start of the reset
operation of the memory cell MC2 can be reduced, whereby a
higher-speed memory device can be achieved.
[0102] According to the first and second aspects, the description
deals with a case in which the memory cell array has a
two-dimensional structure as an example, but the memory cell array
can be configured so as to have a three-dimensional structure or
other structure. By adopting a memory cell array with a
three-dimensional structure, in addition to the effects of the
first and second embodiments, the effect of increasing the degree
of integration of the memory device can be obtained.
[0103] Application of a voltage V between a first component and a
second component can include implementations in which a voltage
substantially equal to the voltage V is applied between the first
component and the second component. Starting an application of a
voltage to a component can refer to electrically connecting the
component to another component that is at the voltage.
[0104] As used herein, the terms "about" and "substantially" are
used to describe and account for small variations. When used in
conjunction with an event or circumstance, the terms "about" and
"substantially" can refer to instances in which the event or
circumstance occurs precisely as well as instances in which the
event or circumstance occurs to a close approximation. For example,
when used in conjunction with a numerical value, the terms "about"
and "substantially" can refer to a range of variation less than or
equal to .+-.10% of that numerical value, such as less than or
equal to .+-.5%, less than or equal to .+-.4%, less than or equal
to .+-.3%, less than or equal to .+-.2%, less than or equal to
.+-.1%, less than or equal to .+-.0.5%, less than or equal to
.+-.0.1%, or less than or equal to .+-.0.05%.
[0105] As used herein, the singular terms "a," "an," and "the" may
include plural referents unless the context clearly dictates
otherwise. In the description of some embodiments, a component
provided "on," "above," or "over" another component can encompass
cases where the former component is directly on (e.g., in physical
contact with) the latter component, as well as cases where one or
more intervening components are located between the former
component and the latter component.
[0106] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the present disclosure. Indeed, the
embodiments described herein may be embodied in a variety of other
forms and can be combined; furthermore, various omissions,
substitutions and changes in the form of the embodiments described
herein may be made without departing from the spirit of the present
disclosure. For example, a constituent element of one embodiment
may be replaced with that of another embodiment or modified. The
accompanying claims and their equivalents are intended to cover
such forms or modifications as would fall within the scope and
spirit of the present disclosure.
* * * * *