U.S. patent application number 15/973186 was filed with the patent office on 2018-09-06 for semiconductor device.
The applicant listed for this patent is Renesas Electronics Corporation. Invention is credited to Takeshi OKAGAKI.
Application Number | 20180254276 15/973186 |
Document ID | / |
Family ID | 55451086 |
Filed Date | 2018-09-06 |
United States Patent
Application |
20180254276 |
Kind Code |
A1 |
OKAGAKI; Takeshi |
September 6, 2018 |
SEMICONDUCTOR DEVICE
Abstract
The semiconductor devise includes a first inverter and a second
inverter which is connected thereto in series. Each of the first
and the second inverters includes a p-channel transistor and an
n-channel transistor, respectively. The number of projection
semiconductor layers each as the active region of the p-channel and
the n-channel transistors of the second inverter is smaller than
the number of the projection semiconductor layers each as the
active region of the p-channel and the n-channel transistors of the
first inverter.
Inventors: |
OKAGAKI; Takeshi; (Tokyo,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Renesas Electronics Corporation |
Tokyo |
|
JP |
|
|
Family ID: |
55451086 |
Appl. No.: |
15/973186 |
Filed: |
May 7, 2018 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
15677546 |
Aug 15, 2017 |
9991263 |
|
|
15973186 |
|
|
|
|
15049127 |
Feb 21, 2016 |
9768172 |
|
|
15677546 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/528 20130101;
H01L 23/5226 20130101; H01L 27/0207 20130101; H01L 29/0657
20130101; H03K 5/134 20140701; H01L 27/0924 20130101 |
International
Class: |
H01L 27/092 20060101
H01L027/092; H01L 27/02 20060101 H01L027/02; H01L 29/06 20060101
H01L029/06; H01L 23/522 20060101 H01L023/522; H01L 23/528 20060101
H01L023/528 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 23, 2015 |
JP |
2015-059529 |
Claims
1-19. (canceled)
20. A semiconductor device comprising: a first inverter; and a
second inverter coupled to the first inverter in series, wherein
the first inverter includes a first p-channel transistor and a
first n-channel transistor, the second inverter includes a second
p-channel transistor and a second n-channel transistor, the first
p-channel transistor includes: a plurality of first sources formed
in a plurality of first projection semiconductor layers extending
along a first direction; a plurality of first drains formed in the
plurality of first projection semiconductor layers; and a plurality
of first gates formed by a first gate wiring coupled to the
plurality of first projection semiconductor layers and extending
along a second direction perpendicular to the first direction, a
first local connection wiring extends along the second direction
and is coupled to the plurality of first sources, a second local
connection wiring extends along the second direction and is coupled
to the plurality of first drains, the first gate wiring is arranged
between the first local connection wiring and the second local
connection wiring in plan view, the first n-channel transistor
includes: a plurality of second sources formed in a plurality of
second projection semiconductor layers extending along the first
direction; a plurality of second drains formed in the plurality of
second projection semiconductor layers; and a plurality of second
gates formed by the first gate wiring coupled to the plurality of
second projection semiconductor layers, a third local connection
wiring extends along the second direction and is coupled to the
plurality of second sources; a fourth local connection wiring
extends along the second direction and is coupled to the plurality
of second drains; the first gate wiring is arranged between the
third local connection wiring and the fourth local connection
wiring in plan view; the second p-channel transistor includes: a
third source formed in a third projection semiconductor layer
extending along the first direction; a third drain formed in the
third projection semiconductor layer; and a third gate formed by a
second gate wiring coupled to the third projection semiconductor
layer and extending along the second direction; the first local
connection wiring is coupled to the third source, a fifth local
connection wiring extends along the second direction and is coupled
to the third drain, the second gate wiring is arranged between the
first local connection wiring and the fifth local connection wiring
in plan view, the second n-channel transistor includes: a fourth
source formed in a fourth projection semiconductor layer extending
along the first direction; a fourth drain formed in the fourth
projection semiconductor layer; and a fourth gate formed by the
second gate wiring coupled to the fourth projection semiconductor
layer, the third local connection wiring is coupled to the fourth
source, a sixth local connection wiring extends along the second
direction and is coupled to the fourth drain, the second gate
wiring is arranged between the third local connection wiring and
the sixth local connection wiring in plan view, the fifth and sixth
local connection wirings are coupled to the first gate wiring for
coupling an output node of the second inverter to an input node of
the first inverter, the second local connection wiring is coupled
with the fourth local connection wiring for forming an output node
of the first inverter, the first and second gate wirings and the
first, second, third, fourth, fifth and sixth local connection
wirings are arranged in a same layer, a number of the third
projection semiconductor layer is less than a number of the first
projection semiconductor layers, and a number of the fourth
projection semiconductor layer is less than a number of the second
projection semiconductor layers.
21. The semiconductor device according to claim 20, further
comprising: a first power wiring coupled to the first local
connection wiring and arranged over the first local connection
wiring; and a second power wiring coupled to the third local
connection wiring and arranged over the third local connection
wiring.
22. The semiconductor device according to claim 20, wherein the
fifth local connection wiring is coupled to the sixth local
connection wiring via a first wiring arranged over the fifth and
sixth local connection wirings.
23. The semiconductor device according to claim 20, wherein the
second local connection wiring is coupled to the fourth local
connection wiring via a second wiring arranged over the second and
fourth local connection wirings.
24. The semiconductor device according to claim 20, further
comprising: a first dummy gate wiring arranged next to the second
and fourth local connection wirings, wherein the first dummy gate
wiring is electrically floating.
25. The semiconductor device according to claim 24, further
comprising: a second dummy gate wiring arranged next to the second
and fourth local connection wirings, wherein the second dummy gate
electrode is electrically floating.
26. The semiconductor device according to claim 24, wherein the
third projection semiconductor layer continues to one of the
plurality of first projection semiconductor layers, and wherein the
fourth projection semiconductor layer continues to one of the
plurality of second projection semiconductor layers.
27. The semiconductor device according to claim 26, wherein another
of the plurality of first projection semiconductor layers is in
contact with the second gate wiring, and wherein another of the
plurality of second projection semiconductor layers is in contact
with the second gate wiring.
28. The semiconductor device according to claim 20, wherein a first
length, along the second direction, between a portion of the fifth
local connection wiring in contact with the third projection
semiconductor layer close to the fourth projection semiconductor
layer and an end portion of the fifth local connection wiring close
to the fourth projection semiconductor layer is greater than a
second length, along the second direction, between a portion of the
second local connection wiring in contact with one of the first
projection semiconductor layers close to the second projection
semiconductor layers and an end portion of the second local
connection wiring close to the second projection semiconductor
layers.
29. The semiconductor device according to claim 28, wherein a third
length, along the second direction, between a portion of the sixth
local connection wiring in contact with the fourth projection
semiconductor layer close to the third projection semiconductor
layer and an end portion of the sixth local connection wiring close
to the third projection semiconductor layer is greater than a
fourth length, along the second direction, between a portion of the
fourth local connection wiring in contact with one of the second
projection semiconductor layers close to the first projection
semiconductor layers and an end portion of the fourth local
connection wiring close to the first projection semiconductor
layers.
Description
CLAIM OF PRIORITY
[0001] The present application claims priority from Japanese patent
application JP2015-59529 filed on Mar. 23, 2015, the content of
which is hereby incorporated by reference into this
application.
BACKGROUND
[0002] The present invention relates to a semiconductor device
which is applicable to a delay inverter circuit for FinFET, for
example.
[0003] Aiming at suppressing the short channel effect in
association with micronization, WO2006/132172 proposes the field
effect transistor (hereinafter referred to as fin type field effect
transistor, FinFET for short) which is configured to have a
projection semiconductor layer projecting upward from a substrate
plane, and form a channel region on both places (both side
surfaces) substantially perpendicular at least to the substrate
plane of the projection semiconductor layer. The FinFET is produced
by forming the three-dimensional structure on the two-dimensional
substrate. The gate volume of the FinFET will be larger than that
of the planar type transistor so long as the substrate has the same
area. As the gate is configured to "envelope" the channel, the
resultant channel controllability of the gate is high, and the leak
current in the state where the device is in OFF state may be
significantly reduced. Therefore, the threshold voltage may be set
to be lower, resulting in optimum switching speed and energy
consumption.
SUMMARY
[0004] The present invention provides the delay circuit suitable
for the FinFET.
[0005] The disclosure of the present invention will be briefly
explained as follows.
[0006] The semiconductor device includes a first inverter and a
second inverter connected thereto in series. Each of the first and
the second inverters includes a p-channel transistor and as
n-channel transistor, respectively. The number of projection
semiconductor layers which constitute active regions of the
p-channel and the n-channel transistors of the second inverter is
smaller than the number of projection semiconductor layers which
constitute active regions of the p-channel and the n-channel
transistors of the first inverter.
[0007] The above-structured semiconductor device is enabled to
constitute the optimum delay circuit.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1A is a plan view for explaining a semiconductor device
according to a first embodiment;
[0009] FIG. 1B is a circuit diagram for explaining the
semiconductor device according to the first embodiment;
[0010] FIG. 2 is a plan view for explaining a semiconductor device
according to a second embodiment;
[0011] FIG. 3A is a plan view for explaining a semiconductor device
according to a third embodiment;
[0012] FIG. 3B is a circuit diagram for explaining the
semiconductor device according to the third embodiment;
[0013] FIG. 4A is a plan view for explaining a semiconductor device
according to a fourth embodiment;
[0014] FIG. 4B is a plan view of an enlarged part of the structure
shown in FIG. 4A;
[0015] FIG. 5A is a sectional view taken along line A'-A'' of FIG.
4B;
[0016] FIG. 5B is a sectional view taken along line B'-B'' of FIG.
4B;
[0017] FIG. 5C is a sectional view taken along line C'-C'' of FIG.
4B;
[0018] FIG. 5D is a sectional view taken along line D'-C'' of FIG.
4B;
[0019] FIG. 5E is a sectional view taken along line E'-C'' of FIG.
4B;
[0020] FIG. 5F is a sectional view taken along line F'-C'' of FIG.
4B;
[0021] FIG. 6A is a plan view for explaining a semiconductor device
according to a fifth embodiment;
[0022] FIG. 6B is a plan view of as enlarged part of the structure
shown to FIG. 6A;
[0023] FIG. 7A is a plan view fox explaining a semiconductor device
according to a sixth embodiment;
[0024] FIG. 7B is a plan view of an enlarged part of the structure
shown in FIG. 7A;
[0025] FIG. 8 is a sectional view taken along line G'-G'' of FIG.
7B;
[0026] FIG. 9A is a plan view for explaining a semiconductor device
according to a seventh embodiment;
[0027] FIG. 9B is a plan view of an enlarged part of the structure
shown in FIG. 9A;
[0028] FIG. 10A is a sectional view taken along line H'-H'' of FIG.
9B;
[0029] FIG. 10B is a sectional view taken along line I'-I'' of FIG.
9B;
[0030] FIG. 10C is a sectional view taken along line J'-J'' of FIG.
9B;
[0031] FIG. 11A is a plan view for explaining a semiconductor
device according to an eighth embodiment;
[0032] FIG. 11B is a plan view of an enlarged part of the structure
shown in FIG. 11A;
[0033] FIG. 12A is a sectional view taken along line K'-K'' of FIG.
11B;
[0034] FIG. 12B is a sectional view taken along line L'-L'' of FIG.
11B;
[0035] FIG. 12C in a sectional view taken along line M'-M'' of FIG.
11B; and
[0036] FIG. 13 is a plan view for explaining a semiconductor device
according to an aspect of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0037] An aspect of the present invention will be described
together with embodiments referring to the drawings. In the
following description, the same components are designated with the
same codes, and explanations thereof, thus will be omitted. The
drawings may be schematically illustrated with respect to width,
thickness, configuration and the like of the respective components
in comparison with the actual mode for clear understanding. It is
to be understood that the description represents one of examples,
which is not intended to restrict interpretation of the present
invention.
[0038] A semiconductor device according to the aspect of the
present invention will be described referring to FIG. 13. FIG. 13
is a plan view of the semiconductor device according to the aspect
of the present invention.
[0039] A semiconductor device 100 according to the aspect of the
invention includes a first inverter 110, and a second inverter 120
connected to the first inverter 110 in series.
[0040] The first inverter 110 includes a first p-channel transistor
111p and a first n-channel transistor 111n. The second inverter 120
includes a second p-channel transistor 121p and a second n-channel
transistor 121n.
[0041] The first p-channel transistor 111p includes a first active
region 12p, a first gate electrode 13, a first local connection
wiring 14sp, and a second local connection wiring 14dp. The first
active region 12p is in the form of a projection semiconductor
layer, extending along a first (X) direction. The first gate
electrode 13 extends along a second (Y) direction. The second local
connection wiring 14sn which extends along the second direction is
connected to a drain side of the first active region.
[0042] The first n-channel transistor 111n includes a second active
region 12n, the first gate electrode 13, a third local connection
wiring 14sn, and a fourth local connection wiring 14dn. The second
active region 12n is in the form of the projection semiconductor
layer, extending along the first direction. The third local
connection wiring 14sn extends along the second direction so as to
be connected to a source side of the second active region 12n. The
fourth local connection wiring 14dn extends along the second
direction so as to be connected to a drain side of the second
active region 12n.
[0043] The second p-channel transistor 121p includes a third active
region 42p, a second gate electrode 43, a fifth local connection
wiring 44sp, and a sixth local connection wiring 44dp. The third
active region 42p is in the form of the projection semiconductor
layer, extending along the first direction. The second gate
electrode 43 extends along the second direction. The fifth local
connection wiring 44sp extends along the second direction so as to
be connected to a source side of the third active region 42p. The
sixth local connection wiring 44dp extends along the second
direction so as to be connected to a drain side of the third active
region 42p.
[0044] The second n-channel transistor 121n includes a fourth
active region 42n, the second gate electrode 43, a seventh local
connection wiring 44sn, and an eighth local connection wiring 44dn.
The fourth active region 42n is in the form of the projection
semiconductor layer, extending along the first direction. The
seventh local connection wiring 44sn extends along the second
direction so as to be connected to a source side of the fourth
active region 42n. The eighth local connection wiring 44dn extends
along the second direction so as to be connected to a drain side of
the fourth active region 42n.
[0045] The number of the third active regions 42p is smaller than
the number of the first active regions 12p, and the number of the
fourth active regions 42n is smaller than the number of the second
active regions 12n.
[0046] The above-structured first and second inverters may
constitute the delay circuit.
First Embodiment
[0047] The semiconductor device according to a first embodiment
will be described referring to FIGS. 1A and 1B. FIG. 1A is a plan
view representing structure of the semiconductor device according
to the first embodiment. FIG. 1B is a circuit diagram of the
semiconductor device according to the first embodiment.
[0048] A semiconductor device 100A of the first embodiment is in
the form of a delay circuit (buffer) constituted by an inverter
circuit for the FinFET. The semiconductor device 100A is formed on
a semiconductor substrate such as silicon (Si) through the process
after 16 nm FinFET, for example.
[0049] As FIG. 1B shows, the semiconductor device 100A is
structured by connecting inverters in two stages in series. A
p-channel transistor (first p-channel transistor) 11p of an
inverter (first inverter) 10 at the latter stage (output side)
includes four active regions (first active regions) 12p, and a gate
electrode (first gate electrode) 13 which crosses those regions.
The p-channel transistor 11p includes a local interconnector (LIC
or local connection wiring) 14sp for connecting four active regions
at the source side, which are connected to a first power source
metal wiring 16vd, and an LIC (second local connection wiring) 14dp
for connecting the four active regions at the drain side. The
active region 12p is constituted by a semiconductor layer
(projection semiconductor layer) with Fin structure. The LIC is
provided because of small width of the projection semiconductor
layer in a planar view, which cannot allow formation of a via for
connection to the upper layer metal wiring. Those four active
regions 12p extend along X direction each in the strip-like form in
a planar view. The gets electrode 13, the LIC (first local
connection wiring) 14sp, and the LIC 14dp extend along Y direction
each in the strip-like form in a planar view. The strip-like form
basically has a thin rectangular shape, the respective long and
short sides of which are not necessarily linear. Each of four
corners of such form does not have to be a right angle, but may be
rounded. The n-channel transistor (first n-channel transistor) 11n
of the inverter 10 includes four active regions (second active
regions) 12n, and the gate electrode 13 which crosses those
regions. The n-channel transistor 11n includes the LIC (third local
connection wiring) 14sn for connecting the four active regions at
the source side, which are connected to a second power source metal
wiring 16vs, and the LIC (fourth local connection wiring) 14dn for
connecting the four active regions at the drain side. The active
region 12n is constituted by the projection semiconductor layer.
The four active regions 12n extend along X direction each in the
strip-like form in a planar view. The gate electrode 13 and an
input metal wiring 16i are connected through a via 15g, and the LIC
14dp and an output metal wiring 16o are connected through a via
15dp. The LIC 14dn and the output metal wiring 16o are connected
through a via 15dn so that the p-channel transistor 11p and the
n-channel transistor 11n are connected. The number of the active
regions 12p is not limited to four so long as it is larger than the
number of the active regions 22p. The number of the active regions
12n is not limited to four so long as it is is larger than the
number of the active regions 22n. The number of the active regions
22p is not limited to one so long as it is smaller than the number
of the active regions 12p. The number of the active regions 22n is
not limited to one so long as it is smaller than the number of the
active regions 12n.
[0050] The p-channel transistor (second p-channel transistor) 21p
of the inverter (second inverter) 20 in the former stage (input
side) includes an active region (third active region) 22p
constituted by the projection semiconductor layers and a gate
electrode (second gate electrode) 23 which crosses the active
region. The p-channel transistor 21p includes an LIC (fifth local
connection wiring) 24sp for connecting the source side of the
active region 22p and the first power source metal wiring 16vd, and
an LIC (sixth local connection wiring) 24dp for connecting the
drain side of the active region 22p and an output metal wiring 26o.
The active region 22p extends along X direction in the strip-like
form in a planar view. The gate electrode 23, the LIC 24sp, and the
LIC 24dp extend along Y direction each in the strip-like form in a
planar view. The n-channel transistor (second n-channel transistor)
21n of the inverter 20 includes the active region (fourth active
region) 22n constituted toy the projection semiconductor layer, and
the gate electrode 23 which crosses the active region. The
n-channel transistor 21n includes an LIC (seventh local connection
wiring) 24sn for connecting the source side of the active region
22n and the second power source metal wiring 16vs, and an LIC
(eighth local connection wiring) 24dn for connecting the drain side
of the active region 22n the output metal wiring 26o. The active
region 22n extends along X direction in the strip-like form in a
planar view. The gate electrode 23 and an input metal wiring 26i
are connected through a via 25g, and the LIC 24dp and the output
metal wiring 26o are connected through a via 25dp. The LIC 24dn and
the output metal wiring 26o are connected through a via 25dn so
that the p-channel transistor 21p and the n-channel transistor 21n
are connected. A connection metal wiring 16io connects the output
metal wiring 26o and the input metal wiring 16i so as to connect
the inverters 20 and 10. The output metal wiring 26o extends along
Y direction in the strip-like form in a planar view. The
semiconductor device 100A includes dummy gate electrodes 13d each
with the same size as the gate electrode 13 in the same layer. The
dummy gate electrodes 13d are provided for uniform density of the
gate electrode layer. The potential applied to the first power
source metal wiring 16vd is higher than the one applied to the
second power source metal wiring 16vs.
[0051] Each of the p-channel transistor 21p and the n-channel
translator 21n has one diffusion region. Each of the p-channel
transistor 11p and the n-channel transistor 11n has four active
regions. The following formulae are established.
Wg2=2.times.H.sub.FIN+W.sub.FIN (1)
Wg1=4.times.(2.times.H.sub.FIN+W.sub.FIN)=4.times.Wg2 (2)
where H.sub.FIN denotes the height (fin height) of the projection
semiconductor layer which constitutes the active region, W.sub.FIN
denotes the width (fin width) of the projection semiconductor layer
Wg2 denotes each gate width of the p-channel transistor 21p and the
n-channel transistor 21n, and Wg1 denotes each gate width of the
p-channel transistor 11p and the n-channel transistor 11n.
[0052] The following formula is established.
Wg 1 / Lg 1 = 4 .times. Wg 2 / Lg 1 = 4 .times. Wg 2 / Lg 2 > Wg
2 / Lg 2 ( 3 ) ##EQU00001##
where Lg2 denotes each gate length (width of the gate electrode 23)
of the p-channel transistor 21p and the n-channel transistor 21n,
and Lg1 denotes each gate width (width of the gate electrode 13) of
the p-channel transistor 11p and the channel transistor 11n, and
the relationship of Lg1=Lg2 is established. In other words, the
ratio of the gate width to each gate length of the p-channel
transistor 21p and the n-channel transistor 21n (Wg2/Lg2) becomes
smaller than the ratio of each gate width to each gate length of
the p-channel transistor 11p and the n-channel transistor 11n
(Wg1/Lg1).
[0053] The width (W.sub.FIN) of the active region 12p in a planar
view is defined as d1, and the distance between adjacent active
regions 12p in a planar view is defined as d2. A distance between
an end of the active region 12p at the side proximate to the
n-channel transistor 11n and an end of the LIC 14dp at the side of
the n-channel transistor 11n in a planar view is defined as d3, and
a distance between an end of the active region 12p at the side
proximate to the first power source metal wiring 16vd, and an end
of the LIC 14dp at the side of the first power source metal wiring
16vd, in a planar view is defined as d4. A distance between an end
of the active region 12p at the side proximate to the n-channel
transistor 11n, and an end of the LIC 14sp at the side of the
n-channel transistor 11n in a planar view is defined as d3, and a
distance between an end of the active region 12p at the side
proximate to the first power source metal wiring 16vd, and an end
of the LIC 14sp at the side of the first power source metal wiring
16vd in a planar view is defined as d5.
[0054] A width of the active region 12n in a planar view is defined
as d1, and a distance between the adjacent active regions 12n in a
planar view is defined as d2. A distance between an end of the
active region 12n at the side proximate to the channel transistor
11p, and an end of the LIC 14dn at the side or the p-channel
transistor 11p in a planar view is defined as d3, and a distance
between an end of the active region 12n at the side proximate to
the second power source metal wiring 16vs, and an end of the LIC
14dn at the side of the second power source metal wiring 16vs in a
planar view is defined as d4. A distance between an end of the
active region 12n at the side proximate to the p-channel transistor
11p, and an end of the LIC 14sn at the side of the p-channel
transistor 11p in a planar view is defined as d3, and a distance
between an end of the active region 12n at the side proximate to
the second power source metal wiring 16vs, and an end of the LIC
14sn at the side of the second power source metal wiring 16vs in a
planar view is defined as d5.
[0055] A width of the active region 22p in a planar view is defined
as d1, a distance between an end of the active region 22p and an
end of the LIC 24dp at the side of the n-channel transistor 11n in
a planar view is defined as d6, and a distance between an end of
the active region 22p and an end of the LIC 24dp at the side of the
first power source metal wiring 16vd in a planar view is defined as
d7. A distance between an end of the active region 22p and an end
of the LIC 24sp at the side of the n-channel transistor 21n in a
planar view is defined as d8, and a distance between an end of the
active region 22p and an end of the LIC 24sp at the side of the
first power source metal wiring 16vd in a planar view is defined as
d9.
[0056] A width of the active region 22n in a planar view is defined
as d1, a distance between an end of the active region 22n and an
end of the LIC 24dn at the side of the p-channel transistor 11p in
a planar view is defined as d6, and a distance between an end of
the active region 22n and an end of the LIC 24dn at the side of the
second power source metal wiring 16vs in a planar view is defined
as d7. A distance between an end of the active region 22n and an
end of the LIC 24sn at the side of the p-channel transistor 21p in
a planar view is defined as d8, and a distance between an end of
the active region 22n and an end of the LIC 24sn at the side of the
second power source metal wiring 16vs in a planer view is defined
as d9.
[0057] Each interval between the LIC 14dp and the LIC 14dn, and
between the LIC 14sp and the LIC 14sn is defined as d10.
[0058] The active region 22p is disposed on the same line with the
active region 12p at the side proximate to the first power source
metal wiring 16vd along X direction, and the active region 22n is
disposed on the same line with the active region 12n at the side
proximate to the second power source metal wiring 16vs along X
direction. The resultant relationships will be expressed by the
following formulae.
Length of LIC24dp=d7+d1+d6 (4)
Length of LIC14dp=d4+d1+(N-1)(d1+d2)+d3 (5)
Length of LIC24dp=d9+d1+d8 (6)
Length of LIC14sp=d5+d1+(N-1)(d1+d2)+d3 (7)
d3=(d1+d2)/4 (8)
where N denotes the number of the active regions of the p-channel
transistor 11p and the n-channel transistor 11n. N=4 is set in the
case of the semiconductor device 100A where d6=d3, d7=d4, d8=d3,
and d0=d4. For example, the d1 is about 10 nm long, and the d2 is
about 40 nm long.
[0059] Assuming that a gate pitch (inter-gate-electrode
distance+gate length) is defined as d11, the resultant relationship
will be expressed by the following formulae. For example, the d11
is approximately 90 nm long.
Ls1=2.times.d11 (9)
Lg1.ltoreq.W.sub.LIC.ltoreq.d11/2 (10)
[0060] The semiconductor device 100A is in the form of the delay
circuit (buffer) structured by connecting inverters in two stages
in series, and configured to minimize the active regions (the
number of projection semiconductor layers) of the inverter in the
former stage for prolonging the delay time. The delay time may be
prolonged by increasing difference in the number of the projection
semiconductor layers of the inverters between the former stage and
the latter stage because the time taken for charging and
discharging the latter stage inverter becomes longer. Preferably,
the number of the projection semiconductor layers of the latter
stage inverter is maximized if the arrangement allow. This makes it
possible to stabilize output signals of the delay circuit. The
delay time may be reduced by enlarging the active region of the
former stage inverter (the number of the projection semiconductor
layers).
Second Embodiment
[0061] A semiconductor device according to a second embodiment will
be described referring to FIG. 2, which is configured to prolong
the delay time longer than the semiconductor device 100A. FIG. 2 is
a plan view representing structure of the semiconductor device
according to the second embodiment.
[0062] Likewise the semiconductor device 100A according to the
first embodiment as shown in FIG. 1B, a semiconductor device 100B
according to the second embodiment is structured by connecting the
inverters in two stages in series. The inverter 10 has the same
structure as that of the inverter at the output side of the
semiconductor device 100A. An inverter 30 in the former stage
(input side) of the semiconductor device 100B is differently
structured from the inverter 20 of the semiconductor device 100A.
FIG. 2 omits description of the first power source metal wiring
16vd and vias 15sp, 25sp which are connected to the wiring, the
second power source metal wiring 16vs, and vias 15sn, 25sn which
are connected to the wiring.
[0063] Each gate width (Wg2) of a p-channel transistor 31p and an
n-channel transistor 31n is the same as each gate width (Wg2) of
the p-channel transistor 21p and the transistor 21n. However, the
gate length (Lg2) of a gate electrode 33 is made longer than the
Lg1 so as to prolong the delay time.
[0064] In order to prolong the delay time with good area
efficiency, the gate length is adjusted to make the thick layout in
reference to the minimum processing rule. This may increase the
cell else in X direction correspondingly. Assuming that the cell
size of the inverter 10 in X direction is defined as Ls1, and the
cell size of the inverter 30 in X direction is defined as Ls2, the
relationship of Ls2>Ls1 is established. Use of transistors each
with different gate length in the same cell may cause dispersion in
the delay time due to different characteristics between those
transistors.
Third Embodiment
[0065] A semiconductor device according to a third embodiment will
be described referring to FIGS. 3A and 3B, which employs
transistors each with the same gate length for solving the problem
of the device according to the second embodiment. FIG. 3A is a plan
view representing structure of the semiconductor device according
to the third embodiment. FIG. 3B is a circuit diagram of the
semiconductor device according to the third embodiment.
[0066] As FIG. 3B shows, a semiconductor device 100C according to
the third embodiment is structured by connecting inverters in
four-stage cascade. The inverter 10 at output side is the same as
the one used for the semiconductor device 100A. Each of the
inverters 20 in three stages at input side is the same as the one
used for the semiconductor device 100A. As each cell size of the
inverters 10 and 20 in X direction is defined as Ls1, the cell size
of the semiconductor device 100C is expressed as 4.times.Ls1. FIG.
3A omits description of the first power source metal wiring 16vd,
the vias 15sp, 25sp which are connected to the wiring, the second
power source metal wiring 16vs, and the vias 15sn, 25sn which are
connected to the wiring. The semiconductor device 100C requires
more transistors to prolong the delay time, leading to increase in
the cell size in X direction.
Fourth Embodiment
[0067] A semiconductor device according to a fourth embodiment will
be described referring to FIGS. 4A, 4B, and 5A to 5F, which employs
long LIC for solving the problem of the device according to the
second and the third embodiments. FIG. 4A is a plan view
representing structure of the semiconductor device according to the
fourth embodiment. FIG. 4B is a plan view of an enlarged part of
the structure as shown in FIG. 4A. FIG. 5A is a sectional view
taken along line A'-A'' of FIG. 4B. FIG. 5B is a sectional view
taken along line B'-B'' of FIG. 4B. FIG. 5C is a sectional view
taken along line C'-C'' of FIG. 4B. FIG. 5D is a sectional view
taken along line D'-D'' of FIG. 4B. FIG. 5E is a sectional view
taken along line E'-E'' of FIG. 4B. FIG. 5F is a sectional view
taken along line F'-F'' of FIG. 4B.
[0068] Likewise the semiconductor device 100A according to the
first embodiment as shown in FIG. 1B, a semiconductor device 100D
according to the fourth embodiment is structured by connecting
inverters in two stages in series. The inverter 10 of the
semiconductor device 100D in the latter stage (output side) has the
same structure as that of the inverter of the semiconductor device
100A. An inverter (second inverter) 40 of the semiconductor device
100D in the former stage (input side) basically has the same
structure as that of the inverter 20 of the semiconductor device
100A except difference in each length of LIC 44dp, 44dn, and the
output metal wiring 46o, end each position of vias 45dp, 45dn.
[0069] A width of an active region 42p in a planar view is defined
as d1, a distance between an end of the active region 42p and an
end of the LIC 44dp at the side of the n-channel transistor (second
n-channel transistor) 41n in a planar view is defined as d6, and a
distance between an end of the active region 42p and an end of the
LIC 44dp at the side of the first power source metal wiring 16vd in
a planar view is defined as d7. A distance between an end of the
active region 42p and an end of the LIC 44sp at the side of the
n-channel transistor 41n in a planar view is defined as d8, and a
distance between an end of the active region 42p and an end of the
LIC 44sp at the side of the first power source metal wiring 16vd in
a planar view is defined as d9.
[0070] A width of an active region 42n in a planar view is defined
as d1, a distance between an end of the active region 42n and an
end of the LIC 44dn at the side of the p-channel transistor 41p in
a planar view is defined as d6, and a distance between an end of
the active region 42n and an end of the LIC 44dn at the side of the
second power source metal wiring 16vs in a planar view is defined
as d7. A distance between an end of the active region 42n and an
end of the LIC 44sn at the side of the p-channel transistor (second
p-channel transistor) 41p in a planar view is defined as d8, and a
distance between an end of the active region 42n and an end of the
LIC 44sn at the side of the second power source metal wiring 16vs
in a planar view is defined as d9.
[0071] The active region 42p is disposed on the same line with the
active region 12p at the side proximate to the first power source
metal wiring 16vd in X direction, and the active region 42n is
disposed on the same line with the active region 12n at the side
proximate to the second power source metal wiring 16vs in X
direction so that the relationship is expressed by the formulae (4)
to (10). In the case of the semiconductor device 100D, the
relationships of d7=d4, d9=d5 are established. Furthermore, the LIC
14dp has the same length as that of the LIC 44dp, the LIC 14sp has
the same length as that of the LIC 44sp, the LIC 14dn has the same
length as that of the LIC 44dn, and the LIC 14sn has the same
length as that of the LIC 44sn for establishing the following
relationships.
d6=(N-1)(d1+d2)+d3 (11)
d8=(N-1)(d1+d2)+d3 (12)
In the case of the semiconductor device 100D, N=4 is set.
Accordingly, the d6 becomes longer than the d3, and the d8 becomes
longer than the d3, resulting in the length longer than the
corresponding part of the semiconductor device 100A.
[0072] The number of the active regions 12p is not limited to four
so long as it is larger than the number of the active regions 42p.
The number of the active regions 12n is not limited to four so long
as it is larger than the number of the active regions 42n. The
number of the active regions 42p is not limited to one so long as
it is smaller than the number of the active regions 12p. The number
of the active regions 42n is not limited to one so long as it is
smaller than the number of the active regions 12n.
[0073] FIG. 4B is a plan view representing a part of the n-channel
transistor 41n of the inverter 40 of the semiconductor device 100D
at the input side. The structure of the aforementioned part will be
described referring to FIGS. 5A to 5F. As each of the p-channel
transistor 41p of the inverter 40 at the input side, the n-channel
transistor 11n and the p-channel transistor 11p of the inverter 10
at the output side has the similar structure, explanations of such
structure will be omitted.
[0074] As FIGS. 5A, 5D, 5E, 5F show, the active region 42n as the
semiconductor layer partially projects from a semiconductor
substrate 1 while piercing through an insulating film 2. In other
words, the insulating film 2 constituting an element isolation
region is formed on the semiconductor substrate 1 around the active
region 42n. As FIG. 5D shows, a gate insulating film 3 is formed on
both side surfaces, and upper surface of the active region 42n.
Assuming that height and width of the active region 42n in contact
with the gate insulating film 3 are defined as H.sub.FIN and
W.sub.FIN, respectively, the relationship of H.sub.FIN>W.sub.FIN
is established. For example, the H.sub.FIN map be 30 nm long, and
the W.sub.FIN may be 10 nm wide, approximately. Referring to FIGS.
5A and 5D, the gate electrodes 43, 13 are formed in contact with
the upper and side surfaces of the gate insulating film 3.
Referring to FIGS. 5B and 5C, the gate electrode 43 is formed on
the insulating film 2. Referring to FIGS. 5A to 5C, side walls 4
each as the insulating film are formed at both sides of the gate
electrode 43 in an extending direction. Referring to FIGS. 5A to
5F, an interlayer insulating film 5 is formed over the active
region 42n, the insulating film the gate electrode 43, and the side
walls 4.
[0075] As FIGS. 5A, 5B, 5C and 5F show, the LIC 44sn and 44dn each
made of the first metal film are formed an the upper and side
surfaces of the active region 42n at the source and drain sides,
and above the insulating film 2. In this way, the LIC 44sn is
connected to the active region 42n at the source side, and the LIC
44dn is connected to the active region 42n at the drain side. The
first metal film may be made from tungsten (W), for example.
[0076] As FIGS. 5A to 5F show, an interlayer insulating film 6 is
formed on the interlayer insulating film and the LIC 44sn, 44dn. As
FIGS. 5C and 5F show, the via 45dn as the second metal film is
formed on the LIC 44dn. The via 45dn is connected to the LIC 44dn,
and the via 45sn is connected to the LIC 44sn.
[0077] As FIGS. 5A to 5F show, an interlayer insulating film 7 is
formed on the interlayer insulating film 6 and the via 45dn.
Referring to FIGS. 5C to 5F, the output metal wiring 46o as the
third metal film and the second power source metal wiring 16vs are
formed on the via 45dn and the interlayer insulating film 6. The
via 45dn is connected to the output metal wiring 46o, and the via
45sn is connected to the second power source metal wiring 16vs. The
third metal film may be made from copper (Cu), for example.
[0078] The semiconductor device 100D is exemplified by the buffer
structured by connecting the inverters in two stages in series, and
configured to minimize the active regions (the number of projection
semiconductor layers) of the inverter in the former stage for the
purpose of prolonging the delay time. The LIC of the inverter at
the input side with the part in parallel with the gate electrode
extending not only to the portion on the projection semiconductor
layer but also to the portion without the projection semiconductor
layer. As parasitic capacitance Cpe exists in the part where the
LIC is disposed in parallel with the gate electrode, the parasitic
capacitance may be increased by elongating the parallel driving
distance. Therefore unlike the second embodiment requiring change
in the gate length or the third embodiment repairing increase in
the number of inverters to be connected, this embodiment is capable
of prolonging the delay time while keeping the same cell area. The
inverter capacitance at the input side is doubled compared with the
case where the LIC is disposed only on the projection semiconductor
layer. Assuming that the delay time in the case of the structure
having the LIC disposed only on the projection semiconductor layer
is defined as Ta, the delay time of the inverter at the input side
may be expressed by 2.times.Ta. Assuming that the delay time of the
inverter at the output side is defined as Tb, the delay time in the
case of the inverters in two stages may be expressed by
2.times.Ta+Tb. That is, it is possible to establish the delay time
corresponding to Ta while keeping the same area. As the inverter at
the input side has small number of Fins, the relationship of
Ta>Tb is established. The use of the layout as described in the
fourth embodiment allows the delay time corresponding to Ta to be
prolonged by 1.5 or more times.
[0079] Furthermore, as the transistors employed for this embodiment
are less than those employed for the third embodiment, less leak
current is generated, which allows reduction in power consumption
more than the case with the same delay time.
Fifth Embodiment
[0080] A semiconductor device according to a fifth embodiment will
be described referring to FIGS. 6A and 6B, which has the same delay
time as that of the fourth embodiment. FIG. 6A is a plan view
representing structure of the delay circuit according to the fifth
embodiment. FIG. 6B is a plan view of an enlarged part of the
structure shown in FIG. 6A.
[0081] A semiconductor device 100E according to the fifth
embodiment is substantially the same as the semiconductor device
according to the fourth embodiment except that the arrangement of
the active regions of an inverter (second inverter) 50 at the input
side is different. Sectional views taken along lines A'-A'',
B'-B'', C'-C'' of FIG. 6B are the same as those shown in FIGS. 5A,
5B, 5C, respectively.
[0082] A width of an active region 52p in a planar view is defined
as d1, a distance between an and of the active region 52p and an
end of the LIC 44dp at the side of the n-channel transistor 51n in
a planar view is defined as d6, and a distance between an end of
the active region 52p and an end of the LIC 44dp at the side of the
first power source metal wiring 16vd in a planar view is defined as
d7. A distance between an end of the active region 52p and an end
of the LIC 44sp at the side of the n-channel transistor (second
n-channel transistor) 51n in a planar view is defined as d8, and a
distance between an end of the active region 52p and an end of the
LIC 44sp at the side of the first poser source metal wiring 16vd in
a planar view is defined as d9.
[0083] A width of the active region 52n in a planar view is defined
as d1, a distance between an end of the active region 52n and an
end of the LIC 44dn at the side of the p-channel transistor 51p in
a planar view is defined as d6, and a distance between an end of
the active region 52n and an end of the LIC 44dn at the side of the
second power source metal wiring 16vs in a planar view is defined
as d7. A distance between an end of the active region 52n and an
end of the LIC 44sn at the side of the p-channel transistor (second
p-channel transistor) 51p in a planar view is defined as d8, and a
distance between an end of the active region 52n and an end of the
LIC 44sn at the side of the second power source metal wiring 16vs
in a planar view is defined as d9.
[0084] The active region 52p is disposed on the same line with the
active region 12p at the side farthest to the first power source
metal wiring 16vd in X direction, and the active region 52n is
disposed on the same line with the active region 12n at the side
farthest to the second power source metal wiring 16vs in X
direction so that the relationship is expressed by the formulae (4)
to (10). In the case of the semiconductor device 100E, the
relationships of d6=d3, d8=d3 are established. Furthermore, the LIC
14dp has the same length as that of the LIC 44dp, the LIC 14sp has
the same length as that of the LIC 44sp, the LIC 14dn has the same
length as that of the LIC 44dn, and the LIC 14sn has the same
length as that of the LIC 44sn for establishing the following
relationships.
d7=(N-1)(d1+d2)+d4 (13)
d9=(N-1)(d1+d2)+d5 (14)
In the case of the semiconductor device 100E, N=4 is set.
Accordingly, the d7 becomes longer than the d4, and the d9 becomes
longer than the d5, resulting in the length longer than the
corresponding part of the semiconductor device 100A.
[0085] The number of the active regions 12p is not limited to four
so long as it is larger than the number of the active regions 52p.
The number of the active regions 12n is not limited to four so long
as it is larger than the number of the active regions 52n. The
number of the active regions 52p is not limited to one so long as
it is smaller than the number of the active regions 12p. The number
of the active regions 52n is not limited to one so long as it is
smaller than the number of the active regions 12n.
[0086] In spite of positional change of the active regions of the
inverter at the input side, the delay time may be prolonged because
of increase in the parasitic capacitance likewise the fourth
embodiment.
[0087] the active region 52p does not have to be disposed on the
same line with the active region 12p at the side farthest to the
first power source metal wiring 16vd in X direction. It may be
disposed at the position between the active regions 12p at the
sides farthest and proximate to the first power source metal wiring
16vd. The active region 52n does not have to be disposed on the
same line with the active region 12n at the side farthest to the
second power source metal wiring 16vs in X direction. It may be
disposed at the position between the active regions 12n at the
sides farthest and proximate to the second power source metal
wiring 16vs.
Sixth Embodiment
[0088] A semiconductor device according to a sixth embodiment will
be described referring to FIGS. 7A, 7B, 8, which has the delay time
shorter than the cases of the fourth and the fifth embodiments.
FIG. 7A is a plan view representing structure of the semiconductor
device according to the sixth embodiment. FIG. 7B is a plan view of
an enlarged part of the structure shown in FIG. 7A. FIG. 8 is a
sectional view taken along line G'-G'' of FIG. 7B.
[0089] A semiconductor device 100F according to the sixth
embodiment is basically the same as the semiconductor device
according to the first embodiment except that the LIC to be
connected to the drain side active region of an inverter (second
inverter) 60 at the input side has the different length. In the
state where the length of the LIC is variable, sectional views
taken along lines A'-A'' and C'-C'' of FIG. 7B are analogical to
those shown in FIGS. 5A and 5C, respectively.
[0090] A width of the active region 42p in a planar view is defined
as d1, a distance between an end of the active region 42p and an
end of an LIC 64dp at the side of an n-channel transistor 61n in a
planar view is defined as d6, and a distance between an end of the
active region 42p and an end of the LIC 64dp at the side of the
first power source metal wiring 16vd in a planar view is defined as
d7. A distance between an end of the active region 42p and an end
of the LIC 44sp at the side of the n-channel transistor (second
n-channel transistor) 61n in a planar view is defined as and a
distance between an end of the active region 42p and an end of the
LIC 44sp at the side of the first power source metal wiring 16vd in
a planar view is defined as d9.
[0091] A width of the active region 42n in a planar view is defined
as d1, a distance between an end of the active region 42n and an
and of the LIC 64dn at the side of the p-channel transistor 41p in
a planar view is defined as d6, and a distance between an end of
the active region 42n and an end of the LIC 64dn at the side of the
second power source metal wiring 16vs in a planar view is defined
as d7. A distance between an end of the active region 42n and an
end of the LIC 44sn at the side of the p-channel transistor (second
p-channel transistor) 61p in a planar view is defined as d8, and a
distance between an end of the active region 42n and an end of the
LIC 44sn at the side of the second power source metal wiring 16vs
in a planar view is defined as d9.
[0092] The active region 42p is disposed on the same line with the
active region 12p at the side proximate to the first power source
metal wiring 16vd in X direction, and the active region 42n is
disposed on the same line with the active region 12n at the side
proximate to the second power source metal wiring 16vs in X
direction so that the relationship is expressed by the formulae (4)
to (10). In the case of the semiconductor device 100F, the
relationships of d6=d3, d7=d4, d9=d5 are established. Furthermore,
the LIC 14sp has the same length as that of the LIC 44sp, and the
LIC 14sn has the same length as that of the LIC 44sn for
establishing the following relationship.
d8=(N-1)(d1+d2)+d3 (12)
In the case of the semiconductor 100D, N=4 is set. Accordingly, the
d8 becomes longer then the d3, resulting in the length longer than
the corresponding part of the send conduct or device 100A.
[0093] The number of the active regions 12p is not limited to four
so long as it is larger than the number of the active regions 42p.
The number of the active regions 12n is not limited to four so long
as it is larger than the number of the active regions 42n. The
number of the active regions 42p is not limited to one so long as
is smaller than the number of the active regions 12p. The number of
the active regions 42n is not limited to one so long as it is
smaller than the number of the active regions 12n.
[0094] Consequently, as FIGS. 7B and 8 show, the LIC in parallel
with most part of the gate electrode 43 at one side hardly exists.
Then the parasitic capacitance (CPe) between the gate electrode and
the LIC is reduced. The delay time of the CMOS inverter 60 at the
input side is expressed as Ta+Ta/2, which is prolonged by Ta/2.
Compared with the fourth embodiment, the delay time of the inverter
at the input side is reduced by Ta/2.
[0095] According to the first, fourth, sixth embodiments, values of
the d6 and d8 may be in the following range.
d3.ltoreq.d6.ltoreq.(N-1)(d1+d2)+d3 (15)
d3.ltoreq.d8.ltoreq.(N-1)(d1+d2)+d3 (16)
In the aforementioned range, d6=d8=d3 is established In the first
embodiment, and d6=d8=(N-1)(d1+d2)+d3 is established in the fourth
embodiment.
[0096] The delay time of the inverter at the input side may be
adjusted in the range of (1.5-2) Ta by regulating the length of the
LIC at the drain side of the active region. It is possible to
reduce the length (d8) of the LIC to be connected to the source
side of the active region. The delay time of the inverter at the
input side may be adjusted in the range of (1-1.5) Ta by regulating
the length of the LIC at the source side of the active region. The
delay time of the inverter at the input side may be adjusted in the
range of (1-2) Ta by regulating each length of the LIC both at the
drain and source sides of the active region. The change in the LIC
length as described above makes if possible to adjust the delay
time while keeping the same area of the inverter.
Seventh Embodiment
[0097] A semiconductor device according to a seventh embodiment
will be described referring to FIGS. 9A, 9B, and 10A to 10C, FIG.
9A is a plan view representing structure of the semiconductor
device according to the seventh embodiment. FIG. 9B is a plan view
of an enlarged part of the structure shown in FIG. 9A. FIG. 10A is
a sectional view taken along line H'-H'' of FIG. 9B. FIG. 10B is a
sectional view taken along line I'-I'' of FIG. 9B. FIG. 10C is a
sectional view taken along line J'-J'' of FIG. 9B.
[0098] A semiconductor device 100G according to the seventh
embodiment is basically the same as the semiconductor device 100D
according to the fourth embodiment except the metal wiring as the
upper layer of the LIC of an inverter (second Inverter) 70 at the
input side, and arrangement of the vias. In other words, values of
d1 to d11 of the semiconductor devise 100G are the same as those of
the semiconductor device 100D.
[0099] An output metal wiring 76o is disposed so as to be layered
on the LIC 44dp and the LIC 44dn. The output metal wiring 76o is
connected to the LIC 44dp through a plurality of vias 45dp (three
vias in the drawing), and is connected to the LIC 44dn through a
plurality of vias 45dn (three vias in the drawing). A metal wiring
76sp to be connected to the first power source metal wiring 16vd is
disposed so as to be layered on the LIC 44sp, and a metal wiring
76sn to be connected to the second power source metal wiring 16vs
is disposed so as to be layered on the LIC 44sn. The LIC 44sp is
connected to the metal wiring 76sp through a plurality of vias 45sp
(four vias in the drawing), and the LIC 44sn is connected to the
metal wiring 76sn through a plurality of vias 45dn (four vias in
the drawing).
[0100] As FIGS. 10A, 10B, 10C show, the parasitic capacitance is
newly generated between the metal wiring and the gate electrode,
the via and the gate electrode, and the metal wirings,
respectively. The resultant parasitic capacitance becomes greater
than that of the fourth embodiment, thus prolonging the delay time.
Increase in the number of the vias will further add the parasitic
capacitance to the via capacity (between the via and the gate
electrode, between the vias, between the via and the metal wiring).
This makes it possible to prolong the delay time.
[0101] This embodiment is configured to increase the parasitic
capacitance by adding the metal wirings and the vias to the
structure according to the fourth embodiment. However, the
aforementioned features may be applied to the first, fifth, sixth,
and eighth embodiments.
Eighth Embodiment
[0102] A semiconductor device according to an eighth embodiment
will be described referring to FIGS. 11A, 11B, and 12A to 12C. FIG.
11A is a plan view representing structure of the semiconductor
device according to the eighth embodiment. FIG. 11B is a plan view
of an enlarged part of the structure shown to FIG. 11A. FIG. 12A is
a sectional view taken along line K'-K'' of FIG. 11B. FIG. 12B is a
sectional view taken along line L'-L'' of FIG. 11B. FIG. 12C is a
sectional view taken along line M'-M'' of FIG. 11B.
[0103] Likewise the semiconductor device 100A according to the
first embodiment as shown in FIG. 1B, a semiconductor device 100H
according to the eighth embodiment is structured by connecting the
inverters in two stages in series. The inverter 10 of the
semiconductor device 100H at the output side has substantially the
same structure as that of the inverter of the semiconductor device
100A at the output side, and an inverter (second inverter) 80 of
the semiconductor device 100H is configured to share the source
side LIC of the inverter at the output side.
[0104] The p-channel transistor 11p of the inverter 10 at the
output side includes the active regions 12p constituted by the
semiconductor layer with three Fin structures, an active region
(first active region) 82p as the semiconductor layer with single
Fin structure, and the gate electrode 13 which crosses those
regions. The p-channel transistor 11p includes the LIC 14sp for
connecting four active regions at the source side, which are
connected to the first power source metal wiring 16vd, and the LIC
14dp for connecting four active regions at the drain side. The
n-channel transistor 11n of the inverter 10 at the output side
includes active regions 12n with three-Fin structure, and the gate
electrode which crosses the active regions. The n-channel
transistor 11n includes the LIC 14sn for connecting four active
regions at the source side, which are connected to the second power
source metal wiring 16vs, and an active region (second active
region) 82n as the semiconductor layer with the single Fin
structure, and the LIC 14dn for connecting four active regions at
the drain side. The number of the active regions 82p is not limited
to one, but may be set to, fore example, two so long as it is
smaller than the number of the active regions of the p-channel
transistor 11p. In the case where the p-channel transistor 11p has
four active regions, and two active regions 82p, the number of the
active regions 12p becomes two. The number of the active regions
82n is not limited to one, but may be set to, for example, two so
long as it is smaller than the number of the active regions of the
n-channel transistor 11n. In the case where the n-channel
transistor 11n has four active regions, end two active regions 82n,
the number of the active regions 12n becomes two.
[0105] A p-channel transistor (second p-channel transistor) 81p of
the inverter 80 at the input side includes an active region (third
active region) 82p, and a gate electrode 83 which crosses the
active region. The p-channel transistor 81p includes the LIC 14sp
for connecting the source side of the active region 82p and the
first power source metal wiring 16vd, and as LIC 84dp for
connecting the drain side of the active region 82p and an output
metal wiring 86o. The active region of the p-channel transistor 81p
is connected to one of the active regions of the p-channel
transistor 11p. In the case of two active regions 82p of the
p-channel transistor 81p, they are connected to the respective
active regions of the p-channel transistor 11p.
[0106] An n-channel transistor (second n-channel transistor) 81n of
the inverter 80 at the input side includes an active region (fourth
active region) 82n, and the gate electrode 83 which crosses the
active region. The n-channel transistor 81n includes an LIC 14sn
for connecting the source side of the active region 82n and the
second power supply metal wiring 16vs, and an LIC 84dn for
connecting the drain side of the active region 82n and the output
metal wiring 86o. The active region of the n-channel transistor 81n
is connected to one of the active regions of the n-channel
transistor 11n. In the case of two active regions 82n of the
n-channel transistor 81n, they are connected to the respective
active regions of the n-channel transistor 11n.
[0107] The gate electrode 83 end an input metal wiring 86i are
connected through a via 85g, the LIC 84dp and the output metal
wiring 86o are connected through a via 85dp, the LIC 84dn and the
output metal wiring 86o are connected through a via 85dn so that
the p-channel transistor 81p and the n-channel transistor 81n are
connected. The output metal wiring 86o and the input metal wiring
16i are connected through the connection metal wiring 16io so that
the input side inverter 80 and the output side inverter 10 are
connected. The semiconductor device 100H includes dummy gate
electrodes 13d each with the size as the gate electrode on the same
layer, which is kept unconnected. The number of the dummy gate
electrodes is smaller than the number of those electrodes in other
embodiments by one. The potential applied to the first power source
metal wiring 16vd is higher than the one applied to the second
power source metal wiring 16vs.
[0108] Values of d1 to d7, d10 and d11 of the semiconductor device
100H are the same as those of the semiconductor device 100D. As the
source side LICs are shared by the inverters 10 and 80, d8 and d9
do not exist.
[0109] As FIGS. 12A to 12C show, likewise each parasitic
capacitance between the gate electrode 13 and the LIC 14dn, the
gate electrode 13 and the LIC 14sn, the gate electrode 83 and the
via 15dn, and the gate electrode 13 and the output metal wiring
16o, each parasitic capacitance between the gate electrode 83 and
the LIC 84dn, the gate electrode 83 and the LIC 14sn, the gate
electrode 83 and the via 85dn, and the gate electrode 83 and the
output metal wiring 86o will be added so that the delay time of the
inverter 80 is substantially the same as that of the fourth
embodiment.
[0110] The active region 82p does not have to be disposed at the
side proximate to the first power source metal wiring 16vd, but may
be disposed at the position between the active regions 12p at the
sides farthest and proximate to the first power source metal wiring
16vd. The active region 82n does not have to be disposed at the
side proximate to the second power source metal wiring 16vs, but
may be disposed at the position between the active regions 12n at
the sides farthest and proximate to the second power source metal
wiring 16vs. Each number of the vias 85dp end 85dn is not limited
to one, but a plurality of vias may be provided as described in the
seventh embodiment.
[0111] The semiconductor device 100H is configured that the LICs to
be connected to the first and the second power sources are shared
by the inverters 10 and 80. This snakes it possible to reduce the
distance in X direction, thus decreasing the cell area.
[0112] The present invention has been described, taking the
embodiments as examples. However, it is to be understood that the
present invention is not limited to those embodiments, but may be
modified into various forms within the scope of the present
invention.
* * * * *