U.S. patent application number 15/962370 was filed with the patent office on 2018-08-30 for semiconductor device, method for producing same and aliphatic polycarbonate.
The applicant listed for this patent is Japan Advanced Institute of Science and Technology, Sumitomo Seika Chemicals Co., Ltd.. Invention is credited to Nobutaka FUJIMOTA, Satoshi INOUE, Shuichi KARASHIMA, Kiyoshi NISHIOKA, Tatsuya SHIMODA.
Application Number | 20180248047 15/962370 |
Document ID | / |
Family ID | 53402801 |
Filed Date | 2018-08-30 |
United States Patent
Application |
20180248047 |
Kind Code |
A1 |
INOUE; Satoshi ; et
al. |
August 30, 2018 |
SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SAME AND ALIPHATIC
POLYCARBONATE
Abstract
It is an object of the invention to provide a thin film
transistor and a method for producing the same, which will easily
achieve self-aligned formation of a source/drain region without
through processes under a vacuum or a low pressure or with no use
of expensive equipment.
Inventors: |
INOUE; Satoshi; (Ishikawa,
JP) ; SHIMODA; Tatsuya; (Ishikawa, JP) ;
FUJIMOTA; Nobutaka; (Osaka, JP) ; NISHIOKA;
Kiyoshi; (Hyogo, JP) ; KARASHIMA; Shuichi;
(Osaka, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Japan Advanced Institute of Science and Technology
Sumitomo Seika Chemicals Co., Ltd. |
lshikawa
Hyogo |
|
JP
JP |
|
|
Family ID: |
53402801 |
Appl. No.: |
15/962370 |
Filed: |
April 25, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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15104726 |
Jun 15, 2016 |
9985137 |
|
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PCT/JP2014/083187 |
Dec 16, 2014 |
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15962370 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C09D 169/00 20130101;
H01L 29/24 20130101; C09D 7/61 20180101; H01L 21/477 20130101; H01L
29/78696 20130101; C09D 5/008 20130101; H01L 29/66969 20130101;
H01L 21/385 20130101; H01L 29/78618 20130101; H01L 29/7869
20130101; C08G 64/02 20130101 |
International
Class: |
H01L 29/786 20060101
H01L029/786; H01L 29/66 20060101 H01L029/66; H01L 29/24 20060101
H01L029/24; C09D 7/61 20180101 C09D007/61; H01L 21/385 20060101
H01L021/385; C09D 169/00 20060101 C09D169/00; C09D 5/00 20060101
C09D005/00; H01L 21/477 20060101 H01L021/477 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 16, 2013 |
JP |
2013-259031 |
Claims
1. A method for producing a semiconductor device, the method
comprising: an aliphatic polycarbonate layer forming step of
forming an aliphatic polycarbonate layer that covers a gate
electrode layer disposed above a semiconductor layer, with a gate
insulator being interposed between the gate electrode layer and the
semiconductor layer, covers the semiconductor layer, and comprises
a dopant; and a heating step of heating the aliphatic polycarbonate
layer at a temperature to cause introduction of the dopant into the
semiconductor layer and decomposition of the aliphatic
polycarbonate layer.
2. The method for producing the semiconductor device according to
claim 1, wherein the semiconductor layer is a first material layer,
the first material layer is an oxide layer including one, two, or
more metals selected from the group consisting of indium (In), tin
(Sn), zinc (Zn), cadmium (Cd), zirconium (Zr), gallium (Ga),
antimony (Sb), and copper (Cu), or a layer including a member
selected from the group consisting of silicon (Si) and a silicon
compound, and the dopant is an n-type dopant, and includes one,
two, or more elements selected from the group consisting of tin
(Sn), fluorine (F), antimony (Sb), indium (In), gallium (Ga),
phosphorus (P), arsenic (As), and aluminum (Al).
3. The method for producing the semiconductor device according to
claim 1, wherein the semiconductor layer is a second material
layer, the second material layer is an oxide layer or a sulfide
layer including one, two, or more metals selected from the group
consisting of copper (Cu), aluminum (Al), gallium (Ga), strontium
(Sr), lanthanum (La), selenium (Se), zinc (Zn), zirconium (Zr), and
antimony (Sb), or a layer including a member selected from the
group consisting of silicon (Si) and a silicon compound, and the
dopant is a p-type dopant, and includes one, two, or more elements
selected from the group consisting of tin (Sn), fluorine (F),
antimony (Sb), indium (In), gallium (Ga), aluminum (Al), boron (B),
and magnesium (Mg).
4. The method for producing the semiconductor device according to
claim 1, wherein the heating step includes a step of irradiating
the aliphatic polycarbonate layer with ultraviolet rays (UV) in an
ozone (O.sub.3) atmosphere.
5. The method for producing the semiconductor device according to
claim 1, wherein the aliphatic polycarbonate is at least one member
selected from the group consisting of polyethylene carbonate and
polypropylene carbonate.
6. The method for producing the semiconductor device according to
claim 1, wherein the aliphatic polycarbonate is polypropylene
carbonate, and an amount of the dopant is 0.05 mol or more and 0.1
mol or less with respect to 1 kg of the polypropylene carbonate
alone.
7. An apparatus for producing a semiconductor device, the apparatus
comprising: a layer formation system to form an aliphatic
polycarbonate layer that covers a gate electrode layer disposed
above a semiconductor layer, with a gate insulator being interposed
between the gate electrode layer and the semiconductor layer,
covers the semiconductor layer, and comprises a dopant; and a
heating system to heat the aliphatic polycarbonate layer at a
temperature to cause introduction of the dopant into the
semiconductor layer and decomposition of the aliphatic
polycarbonate layer.
8. The apparatus for producing the semiconductor device according
to claim 7, wherein the semiconductor layer is a first material
layer, the first material layer is an oxide layer including one,
two, or more metals selected from the group consisting of indium
(In), tin (Sn), zinc (Zn), cadmium (Cd), zirconium (Zr), gallium
(Ga), antimony (Sb), and copper (Cu), or a layer including a member
selected from the group consisting of silicon (Si) and a silicon
compound, and the dopant is an n-type dopant, and includes one,
two, or more elements selected from the group consisting of tin
(Sn), fluorine (F), antimony (Sb), indium (In), gallium (Ga),
phosphorus (P), arsenic (As), and aluminum (Al).
9. The apparatus for producing the semiconductor device according
to claim 7, wherein the semiconductor layer is a second material
layer, the second material layer is an oxide layer or a sulfide
layer including one, two, or more metals selected from the group
consisting of copper (Cu), aluminum (Al), gallium (Ga), strontium
(Sr), lanthanum (La), selenium (Se), zinc (Zn), zirconium (Zr), and
antimony (Sb), or a layer including a member selected from the
group consisting of silicon (Si) and a silicon compound, and the
dopant is a p-type dopant, and includes one, two, or more elements
selected from the group consisting of tin (Sn), fluorine (F),
antimony (Sb), indium (In), gallium (Ga), aluminum (Al), boron (B),
and magnesium (Mg).
10. The apparatus for producing the semiconductor device according
to claim 7, wherein the heating system is to irradiate the
aliphatic polycarbonate layer with ultraviolet rays (UV) in an
ozone (O.sub.3) atmosphere.
11. The apparatus for producing the semiconductor device according
to claim 7, wherein the aliphatic polycarbonate is at least one
member selected from the group consisting of polyethylene carbonate
and polypropylene carbonate.
12. The apparatus for producing the semiconductor device according
to claim 7, wherein the aliphatic polycarbonate is polypropylene
carbonate, and an amount of the dopant is 0.05 mol or more and 0.1
mol or less with respect to 1 kg of the polypropylene carbonate
alone.
13. A method for producing an intermediate semiconductor device,
the method comprising: an aliphatic polycarbonate layer forming
step of forming an aliphatic polycarbonate layer that covers a gate
electrode layer disposed above a semiconductor layer, covers the
semiconductor layer, and comprises a dopant, wherein a gate
insulator is interposed between the gate electrode layer and the
semiconductor layer.
14. The method for producing the intermediate semiconductor device
according to claim 13, wherein the semiconductor layer is a first
material layer, the first material layer is an oxide layer
including one, two, or more metals selected from the group
consisting of indium (In), tin (Sn), zinc (Zn), cadmium (Cd),
zirconium (Zr), gallium (Ga), antimony (Sb), and copper (Cu), or a
layer including a member selected from the group consisting of
silicon (Si) and a silicon compound, and the dopant is an n-type
dopant, and includes one, two, or more elements selected from the
group consisting of tin (Sn), fluorine (F), antimony (Sb), indium
(In), gallium (Ga), phosphorus (P), arsenic (As), and aluminum
(Al).
15. The method for producing the intermediate semiconductor device
according to claim 13, wherein the semiconductor layer is a second
material layer, the second material layer is an oxide layer or a
sulfide layer including one, two, or more metals selected from the
group consisting of copper (Cu), aluminum (Al), gallium (Ga),
strontium (Sr), lanthanum (La), selenium (Se), zinc (Zn), zirconium
(Zr), and antimony (Sb), or a layer including a member selected
from the group consisting of silicon (Si) and a silicon compound,
and the dopant is a p-type dopant, and includes one, two, or more
elements selected from the group consisting of tin (Sn), fluorine
(F), antimony (Sb), indium (In), gallium (Ga), aluminum (Al), boron
(B), and magnesium (Mg).
16. The method for producing the intermediate semiconductor device
according to claim 13, wherein the aliphatic polycarbonate is at
least one member selected from the group consisting of polyethylene
carbonate and polypropylene carbonate.
17. The method for producing the intermediate semiconductor device
according to claim 13, wherein the aliphatic polycarbonate is
polypropylene carbonate, and an amount of the dopant is 0.05 mol or
more and 0.1 mol or less with respect to 1 kg of the polypropylene
carbonate alone.
Description
TECHNICAL FIELD
[0001] The present invention relates to a semiconductor device, a
method for producing the same, and an aliphatic polycarbonate.
BACKGROUND ART
[0002] Conventionally, a film forming process or an etching process
under a vacuum or a low pressure has been predominantly adopted in
the production of a thin film transistor as an exemplary
semiconductor device. Recently adopted in the production of a thin
film transistor is a technique of forming a functional material
layer on a substrate under a normal pressure from various solutions
as starting materials, instead of the step under a vacuum or a low
pressure (Patent Document 1).
PRIOR ART DOCUMENT
Patent Document
[0003] Patent Document 1: JP 2013-110175 A
SUMMARY OF THE INVENTION
Problems to be Solved by the Invention
[0004] These processes under a vacuum or a low pressure adopted
conventionally require a relatively long time period and/or
expensive equipment, and thus lead to very low utilization
efficiency of raw materials and production energy. This is not
preferred from the industrial and mass productivity perspectives.
Producing a semiconductor device with use of the technique of
forming a functional material layer from various characteristic
solutions as starting materials is now attracting considerable
attention in the industry from the industrial and mass productivity
perspectives. However, further research and development are still
required for achievement of an ideal semiconductor device.
[0005] Here are typical examples of problems to be solved. The
inventors of this application assume that a peripheral circuit of a
thin film transistor as an exemplary semiconductor device needs to
be integrated in order for further improvement in performance of
the thin film transistor. An inverted staggered thin film
transistor adopted conventionally has a problem that it becomes
harder to disregard parasitic capacitance as the thin film
transistor is more integrated. One possible solution to these
problems is a thin film transistor having a coplanar structure
(i.e. a top gate structure), which is regarded as appropriate for
achievement of a self-aligned thin film transistor. What is
required for this solution is how to achieve such a self-aligned
thin film transistor in accordance with the technique of forming a
functional material layer with use of various characteristic
solutions.
[0006] In a case of adopting the thin film transistor having the
coplanar structure, use of a gate electrode as a so-called mask
allows self-aligned formation of a source/drain region so as to
achieve a self-aligned thin film transistor. However, ion
implantation, which has been conventionally adopted for forming a
source/drain region, needs to be performed under a vacuum and is
not preferred as described above.
Solutions to the Problems
[0007] The present invention solves at least one of the problems
mentioned above to greatly contribute to provision of a
semiconductor device and a method for producing the same, which
will easily achieve self-aligned formation of a source/drain region
without the processes under a vacuum or a low pressure or expensive
equipment. The present invention also greatly contributes to
provision of a material that allows formation of such a
source/drain region.
[0008] The inventors of this application have researched or
developed, for formation of a functional material layer with use of
a certain solution, a functional material layer formed from various
characteristic solutions themselves as starting materials. The
inventors of this application have newly found, through intensive
and repetitive research and analysis, that a layer formed with use
of a specific solution can be utilized for changing or modifying
quality of an already formed layer serving as a matrix. The
inventors of this application have also found that, even in a case
where the matrix is an oxide layer, the layer formed with use of
the specific solution can highly reliably be removed after
completing its function of changing or modifying the quality of the
layer serving as a matrix. The present invention has been devised
in accordance with these points.
[0009] An exemplary method for producing a semiconductor device
according to the present invention includes: an aliphatic
polycarbonate layer forming step of forming an aliphatic
polycarbonate layer that covers a gate electrode layer disposed
above a semiconductor layer with a gate insulator (gate insulating
layer) being interposed between the gate electrode layer and the
semiconductor layer, and also covers the semiconductor layer, and
has a dopant causing the semiconductor layer to become an n-type or
p-type semiconductor layer; and a heating step of heating at a
temperature causing introduction of the dopant into the
semiconductor layer and decomposition of the aliphatic
polycarbonate layer.
[0010] According to this method for producing the semiconductor
device, heating the semiconductor layer serving as a matrix and the
aliphatic polycarbonate layer having the dopant enables the dopant
to be introduced from the aliphatic polycarbonate layer into the
semiconductor layer. Furthermore, the dopant is introduced from the
aliphatic polycarbonate layer into the semiconductor layer with the
gate electrode layer substantially serving as a mask. It is thus
possible to produce a self-aligned semiconductor device (more
specifically exemplified by a thin film transistor) with
significant reduction in the number of process steps as well as in
load. The aliphatic polycarbonate layer itself is decomposed
through the heating and is substantially eliminated. There is thus
no need to perform additional treatment for removal of a residue,
or simple removal of the residue is sufficient. This method for
producing the semiconductor device thus achieves change or
modification in quality of the semiconductor layer serving as a
matrix with excellent dimensional accuracy and with quite ease.
[0011] An exemplary semiconductor device according to the present
invention includes: a gate electrode layer disposed above a
semiconductor layer with a gate insulator being interposed between
the gate electrode layer and the semiconductor layer; and a source
electrode and a drain electrode formed by introducing a dopant into
the semiconductor layer through heating at a temperature causing
decomposition of an aliphatic polycarbonate layer that covers the
gate electrode layer and the semiconductor layer and has the dopant
causing the semiconductor layer to become an n-type or p-type
semiconductor layer.
[0012] This semiconductor device allows the dopant to be introduced
from the aliphatic polycarbonate layer into the semiconductor layer
by heating of the semiconductor layer serving as a matrix and the
aliphatic polycarbonate layer having the dopant. Furthermore, the
dopant is introduced from the aliphatic polycarbonate layer into
the semiconductor layer with the gate electrode layer substantially
serving as a mask. It is thus possible to achieve a self-aligned
semiconductor device (more specifically exemplified by a thin film
transistor) with significant reduction in the number of process
steps as well as in load. The aliphatic polycarbonate layer itself
is decomposed through the heating and is substantially eliminated.
There is thus no need to perform additional treatment for removal
of a residue, or simple removal of the residue is sufficient. This
semiconductor device thus achieves change or modification in
quality of the semiconductor layer serving as a matrix with
excellent dimensional accuracy and with quite ease.
[0013] An exemplary aliphatic polycarbonate according to the
present invention covers a gate electrode layer disposed above a
semiconductor layer with a gate insulator being interposed between
the gate electrode layer and the semiconductor layer, and the
semiconductor layer, has a dopant causing the semiconductor layer
to become an n-type or p-type semiconductor layer, and serves as a
dopant supply source of causing, when heated at a decomposition
temperature of the aliphatic polycarbonate, the dopant to be
introduced into the semiconductor layer to form a source electrode
and a drain electrode of a semiconductor device.
[0014] This aliphatic polycarbonate allows the dopant included
therein to be introduced into the semiconductor layer when heated
at the decomposition temperature of the aliphatic polycarbonate, so
as to form the source electrode and the drain electrode of the
semiconductor device (more specifically exemplified by a thin film
transistor). Furthermore, the dopant is introduced from this
aliphatic polycarbonate into the semiconductor layer with the gate
electrode layer substantially serving as a mask. It is thus
possible to produce a self-aligned semiconductor device with
significant reduction in the number of process steps as well as in
load. This aliphatic polycarbonate itself serves as a dopant supply
source as well as is decomposed through the heating and is
substantially eliminated. There is thus no need to perform
additional treatment for removal of a residue, or simple removal of
the residue is sufficient. This aliphatic polycarbonate thus serves
as a useful dopant supply source that enables change or
modification in quality of the semiconductor layer serving as a
matrix with excellent dimensional accuracy and with quite ease in
the formation of the source electrode and the drain electrode of
the semiconductor device.
[0015] A "substrate" in this application is not limited to a base
in a plate shape but includes a base in a different mode. A "layer"
in this application conceptually includes a layer as well as a
film. Similarly, a "film" in this application conceptually includes
a film as well as a layer. A "matrix" in this application includes
a substrate as well as a film (or a layer).
Effects of the Invention
[0016] In the exemplary method for producing the semiconductor
device according to the present invention, the dopant is introduced
from the aliphatic polycarbonate layer into the semiconductor layer
with the gate electrode layer substantially serving as a mask. It
is thus possible to produce the self-aligned semiconductor device.
Furthermore, the aliphatic polycarbonate layer itself is decomposed
through the heating and is substantially eliminated. It is thus
possible to achieve change or modification in quality of the
semiconductor layer serving as a matrix with excellent dimensional
accuracy and with quite ease.
[0017] In the exemplary semiconductor device according to the
present invention, the dopant is introduced from the aliphatic
polycarbonate layer into the semiconductor layer with the gate
electrode layer substantially serving as a mask. It is thus also
possible to achieve the self-aligned semiconductor device.
Furthermore, the aliphatic polycarbonate layer itself is decomposed
through the heating and is substantially eliminated. It is thus
possible to achieve the semiconductor device including the
semiconductor layer serving as a matrix of which quality is changed
or modified with excellent dimensional accuracy and with quite
ease.
[0018] The exemplary aliphatic polycarbonate according to the
present invention allows the dopant included therein to be
introduced into the semiconductor layer when heated at the
decomposition temperature of the aliphatic polycarbonate, so as to
form the source electrode and the drain electrode of the
semiconductor device. Furthermore, the dopant is introduced from
this aliphatic polycarbonate into the semiconductor layer with the
gate electrode layer substantially serving as a mask. It is thus
also possible to produce the self-aligned semiconductor device.
This aliphatic polycarbonate itself serves as a dopant supply
source as well as is decomposed through the heating and is
substantially eliminated. The aliphatic polycarbonate thus serves
as a useful dopant supply source that enables change or
modification in quality of the semiconductor layer serving as a
matrix with excellent dimensional accuracy and with quite ease in
the formation of the source electrode and the drain electrode of
the semiconductor device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] FIG. 1 is a schematic sectional view of a process in a
method for producing a thin film transistor as an exemplary
semiconductor device according to a first embodiment of the present
invention.
[0020] FIG. 2 is a schematic sectional view of a process in the
method for producing the thin film transistor as an exemplary
semiconductor device according to the first embodiment of the
present invention.
[0021] FIG. 3 is a schematic sectional view of a process in the
method for producing the thin film transistor as an exemplary
semiconductor device according to the first embodiment of the
present invention.
[0022] FIG. 4 is a schematic sectional view of a process in the
method for producing the thin film transistor as an exemplary
semiconductor device according to the first embodiment of the
present invention.
[0023] FIG. 5 is a schematic sectional view of a process in the
method for producing the thin film transistor as an exemplary
semiconductor device according to the first embodiment of the
present invention.
[0024] FIG. 6 is a schematic sectional view of a process in the
method for producing the thin film transistor as an exemplary
semiconductor device according to the first embodiment of the
present invention.
[0025] FIG. 7 is a schematic sectional view of a process in the
method for producing the thin film transistor as an exemplary
semiconductor device according to the first embodiment of the
present invention.
[0026] FIG. 8 is a schematic sectional view of a process in the
method for producing the thin film transistor as an exemplary
semiconductor device according to the first embodiment of the
present invention.
[0027] FIG. 9 is a graph indicating TG-DTA properties of a PPC
solution as a starting material for an aliphatic polycarbonate
layer according to the first embodiment of the present
invention.
[0028] FIG. 10 is a schematic sectional view of an entire structure
of the thin film transistor as an exemplary semiconductor device
and a process in the method for producing the same according to the
first embodiment of the present invention.
[0029] FIG. 11 is a graph indicating a measurement result of
transfer properties of the thin film transistor as an exemplary
semiconductor device according to the first embodiment of the
present invention.
[0030] FIG. 12 is a graph indicating a relation between a
concentration of impurities (tin acetylacetonate) in a PPC solution
containing impurities and a sheet resistance value of a
semiconductor layer serving as a matrix in the first embodiment of
the present invention.
[0031] FIG. 13 is a graph indicating a relation between a period of
heating, at a predetermined temperature, a layer made of a PPC
solution containing impurities (tin acetylacetonate) having a
certain concentration (10 wt %) and the sheet resistance value of
the semiconductor layer serving as a matrix in the first embodiment
of the present invention.
[0032] FIG. 14 is a graph indicating a relation between the period
(minute) of heating, at a predetermined temperature, a layer made
of a PPC solution containing impurities (tin acetylacetonate)
having a low concentration (1.4 wt %) and the sheet resistance
value (.OMEGA./square) of the semiconductor layer serving as a
matrix in the first embodiment of the present invention.
[0033] FIGS. 15(a) to 15(c) are scanning electron microscope (SEM)
photographs in a planar view of a residue observed after heating of
the layer made of the PPC solution containing impurities having a
certain concentration in the first embodiment of the present
invention.
[0034] FIG. 16 is a schematic sectional view of an entire structure
of a thin film transistor as an exemplary semiconductor device
according to a different embodiment of the present invention.
EMBODIMENTS OF THE INVENTION
[0035] Thin film transistors as exemplary semiconductor devices and
methods for producing the same according to the embodiments of the
present invention will now be described in detail with reference to
the accompanying drawings. In this disclosure, common parts are
denoted by common reference signs in all the drawings unless
otherwise specified. Furthermore, components according to these
embodiments are not necessarily illustrated in accordance with
relative scaling in the drawings. Moreover, some of the reference
signs may not be indicated for the purpose of easier recognition of
the drawings.
First Embodiment
[0036] 1. Method for Producing Thin Film Transistor and Entire
Structure of Thin Film Transistor According to the Present
Embodiment
[0037] FIGS. 1 to 8 are schematic sectional views of processes in a
method for producing a thin film transistor 100 as an exemplary
semiconductor device. FIG. 10 is a schematic sectional view of a
process in the method for producing the thin film transistor 100
according to the present embodiment and an entire structure of the
thin film transistor 100. The thin film transistor 100 has a
coplanar structure (i.e. a top gate structure) in the present
embodiment. FIG. 11 is a graph indicating transfer properties of
the thin film transistor 100 according to the present
embodiment.
[0038] As depicted in FIG. 10, the thin film transistor 100
according to the present embodiment includes a substrate 10, as
well as a source electrode 22, a drain electrode 24, and a
semiconductor layer 20 serving as a channel, which are formed at
the same layer level on the substrate 10. The semiconductor layer
20 is provided thereon with a gate insulator 30 and a gate
electrode layer 40, which are stacked from the lower side in the
mentioned order. A person skilled in the art comprehending the thin
film transistor 100 according to the present embodiment will fully
comprehend provision or achievement of an electronic device
including the thin film transistor 100 (e.g. a mobile terminal, an
information appliance, or any other known electric appliance) with
no particular description. A temperature indicated in this
application is a preset temperature of a heater or a stage to be in
contact with the substrate 10. Patterning of an extraction
electrode from each electrode is not depicted in order for
simplification of the drawings.
[0039] The substrate 10 according to the present embodiment is not
particularly limited, and is a substrate generally included in a
semiconductor device. The substrate 10 can be made of various
insulating base materials including semiconductor substrates (e.g.
a Si substrate, a SiC substrate, and a Ge substrate) such as highly
heat resistant glass, a SiO.sub.2/Si substrate (i.e. a silicon
substrate provided thereon with a silicon oxide film), an alumina
(Al.sub.2O.sub.3) substrate, an STO (SrTiO) substrate, and an
insulating substrate obtained by forming an STO (SrTiO) layer on a
surface of a Si substrate with a Sift layer and a Ti layer being
interposed therebetween. Examples of the insulating substrate
include films and sheets made of materials such as polyesters
including polyethylene terephthalate and polyethylene naphthalate,
polyolefins, cellulose triacetate, polycarbonate, polyamide,
polyimide, polyamide imide, polysulfone, aramid, and aromatic
polyamide. The substrate is not particularly limited in terms of
its thickness, which can be 3 .mu.m or more and 1.1 mm or less. The
substrate may be hard or flexible.
[0040] (1) Formation of Semiconductor Layer (Channel)
[0041] The channel according to the present embodiment is typically
exemplified by a metal oxide layer (also referred to as a "first
material layer") possibly serving as a semiconductor. More
specifically, the first material layer according to the present
embodiment is an oxide (possibly including inevitable impurities)
containing indium (In), zinc (Zn), and zirconium (Zr) having an
atomic ratio of 0.05 with respect to indium (In) assumed to have an
atomic ratio of 1 (hereinafter, also referred to as a
"ZrInZnO.sub.x layer"). Such a metal oxide possibly serving as a
semiconductor is referred to as a "first material" in the present
embodiment.
[0042] The ZrInZnO.sub.x layer is adopted as the semiconductor
layer 20 in the present embodiment particularly for achievement of
various improved properties as a thin film transistor (e.g.
hysteresis reduction or an ON/OFF ratio).
[0043] As depicted in FIG. 1, the substrate 10 according to the
present embodiment is provided thereon with a precursor layer 20a
made of the first material as a compound of a metal (also referred
to as a "metal compound") to be oxidized into a semiconductor
dispersed in a solution (hereinafter, also referred to as the
"first material precursor layer" or the "precursor layer"). The
first material precursor layer 20a is then subjected to preliminary
annealing of heating at 150.degree. C. for a predetermined period
(e.g. 5 minutes) in the atmosphere. This preliminary annealing
evaporates or decomposes a solvent component almost entirely to
eliminate the solvent component.
[0044] The first material precursor layer 20a is subjected to
imprinting after the preliminary annealing. Specifically, as
depicted in FIG. 2, the first material precursor layer 20a is
subjected to imprinting with use of a precursor layer mold M1 with
a pressure of 0.1 MPa or more and 20 MPa or less (typically 10 MPa)
while the first material precursor layer 20a is being heated to a
temperature in the range from 100.degree. C. or more to 200.degree.
C. or less (typically 150.degree. C.). As depicted in FIG. 3, the
first material precursor layer 20a thus has an imprinted
structure.
[0045] The entire precursor layer 20a according to the present
embodiment is subsequently dry etched from a surface thereof by
plasma irradiation under the atmospheric pressure. Alternatively,
the precursor layer 20a is wet etched with use of a known or
commercially available acid solution (e.g. an acid solution having
same components as an indium tin oxide (ITO) etching solution). As
depicted in FIG. 4, the precursor layer 20a is thus removed in a
region provided with no pattern (removal target region) whereas the
precursor layer 20a in a region to be provided with a pattern has
thickness of at least a certain value to eventually be provided
with the pattern. It is noted that, as in the present embodiment,
pattern formation with quite wide dimensional flexibility from
several tens of nanometers to several hundred micrometers or the
like as well as with high dimensional accuracy is achieved even
under the atmospheric pressure.
[0046] The first material precursor layer 20a is then heated, for
example, at 500.degree. C. for a predetermined period in an oxygen
atmosphere, in the atmosphere, or the like for main annealing in an
"annealing step". As depicted in FIG. 5, the substrate 10 is thus
provided thereon with the semiconductor layer (first material
layer) 20 made of the first material. The semiconductor layer 20
after the main annealing is eventually about 40 nm in typical
thickness.
[0047] Examples of a precursor containing indium (In) for the first
material layer serving as the semiconductor layer 20 according to
the present embodiment include indium acetylacetonate. Other
examples include indium acetate, indium nitrate, indium chloride,
and any indium alkoxide (e.g. indium isopropoxide, indium butoxide,
indium ethoxide, or indium methoxyethoxide). Examples of a
precursor containing zinc (Zn) for the first material layer serving
as the semiconductor layer 20 according to the present embodiment
include zinc chloride. Other examples include zinc nitrate, zinc
acetate, and any zinc alkoxide (e.g. zinc isopropoxide, zinc
butoxide, zinc ethoxide, or zinc methoxyethoxide). Examples of a
precursor containing zirconium (Zr) for the first material layer
serving as the semiconductor layer 20 according to the present
embodiment include zirconium butoxide. Other examples include
zirconium nitrate, zirconium chloride, and any other zirconium
alkoxide (e.g. zirconium isopropoxide, zirconium butoxide,
zirconium ethoxide, or zirconium methoxyethoxide).
[0048] The first material layer serving as a semiconductor layer is
not particularly limited in terms of its phase state. For example,
the first material layer may be in any one of a crystal form, a
polycrystal form, and an amorphous form. The present embodiment can
also cover a phase state where a grown crystal has a branch form or
a scale form.
[0049] The precursor layer having high plastic deformability is
subjected to imprinting in the present embodiment. Accordingly,
even if the imprinting is performed with such a low pressure in the
range from 0.1 MPa or more to 20 MPa or less, each precursor layer
is deformed so as to follow the shape of the surface of the mold.
It is thus possible to highly accurately form a desired imprinted
structure. The pressure is set in such a low range from 0.1 MPa or
more to 20 MPa or less, so that the mold is less likely to be
damaged during the imprinting and increase in area will also be
achieved advantageously.
[0050] The pressure is set within the range "from 0.1 MPa or more
to 20 MPa or less" for the following reasons. If the pressure is
less than 0.1 MPa, the precursor layer may not be subjected to
imprinting with such a low pressure. If the pressure is as large as
20 MPa, the precursor layer can be subjected to imprinting
sufficiently and no more pressure needs to be applied thereto.
[0051] (2) Formation of Gate Insulator and Gate Electrode Layer
[0052] In the thin film transistor 100 according to the present
embodiment, the gate insulator 30 is made of silicon oxide
(possibly including inevitable impurities; this applies hereinafter
to an oxide of this material as well as an oxide of any other
material) obtained from, as a starting material, a gate insulator
precursor solution containing a precursor containing silicon (Si)
(e.g. polysilazane) as a solute.
[0053] In the present embodiment, a gate insulator precursor layer
is formed by applying the gate insulator precursor solution onto
the semiconductor layer 20 in accordance with a spin coating method
or the like. The gate insulator precursor layer is then subjected
to the annealing step of heating, for example, at 440.degree. C.
for a predetermined period (e.g. 2 hours) in the atmosphere, for
example. The semiconductor layer 20 is thus provided thereon with
the gate insulator 30. The gate insulator 30 according to the
present embodiment can be about 120 nm thick. As depicted in FIG.
6, the gate electrode layer 40 made of platinum (Pt) is then formed
in accordance with a sputtering technique and a photolithography
technique which are known to the public. The gate electrode layer
40 according to the present embodiment can be about 130 nm
thick.
[0054] The gate insulator 30 is subsequently etched by plasma of
carbon tetrafluoride (CF.sub.4) with use of a known reactive ion
etching (RIE) device, with the gate electrode layer 40
substantially serving as a mask. As depicted in FIG. 7, the
substrate 10 is thus provided thereon with a structure including
the semiconductor layer 20, the gate insulator 30, and the gate
electrode layer 40 stacked in the mentioned order.
[0055] The material for the gate electrode layer 40 according to
the present embodiment is not limited to platinum. The gate
electrode layer 40 can be made of a high melting metal such as
platinum, gold, silver, copper, aluminum, molybdenum, palladium,
ruthenium, iridium, or tungsten, a metal material such as an alloy
thereof, a conductive metal oxide including ruthenium oxide, a
p.sup.+-silicon layer, or an n.sup.+-silicon layer.
[0056] The present embodiment is not particularly limited in terms
of a method for applying the gate insulator precursor solution. For
example, it is possible to adopt, instead of the spin coating
method, a printing method such as gravure printing, screen
printing, offset printing, or ink jet printing, or a coating method
such as roll coating, die coating, air knife coating, blade
coating, reverse coating, or gravure coating. In particular,
according to a preferred aspect, the gate insulator precursor
solution is applied to the substrate 10 in accordance with a simple
method such as the spin coating method or the screen printing
method.
[0057] (3) Production of Aliphatic Polycarbonate
[0058] Described below is a method for producing polypropylene
carbonate (PPC) as a typical example of the aliphatic polycarbonate
according to the present embodiment.
[0059] First, an organozinc catalyst is produced as a metal
catalyst. Specifically, a four-necked flask having the volume of
300 mL and equipped with a stirrer, a nitrogen gas introduction
tube, a thermometer, and a reflux condenser was charged with 8.1 g
(100 mmol) of zinc oxide, 12.7 g (96 mmol) of glutaric acid, 0.1 g
(2 mmol) of acetic acid, and 130 g (150 mL) of toluene. After the
atmosphere in a reaction system was replaced with nitrogen, the
temperature of the flask was raised to 55.degree. C. and the
materials were stirred at this temperature for 4 hours so as to
cause reaction of the materials. The temperature of the flask was
then raised to 110.degree. C. and the materials were stirred at
this temperature for 4 hours so as to cause azeotropic dehydration
for removal of only water. The flask was then cooled to room
temperature so as to obtain a reaction solution containing an
organozinc catalyst.
[0060] The organozinc catalyst, which was obtained by partially
fractionating and filtrating the reaction solution, was subjected
to IR measurement (an apparatus manufactured by Thermo Nicolet
Japan Inc., trade name: AVATAR360). There was found no peak caused
by carboxylic groups.
[0061] Subsequently, the atmosphere in a system of an autoclave
having the volume of 1 L and equipped with a stirrer, a gas
introduction tube, and a thermometer was preliminarily replaced
with nitrogen, and the autoclave was then charged with 8.0 mL of
the reaction solution containing the organozinc catalyst
(containing 1.0 g of the organozinc catalyst), 131 g (200 mL) of
hexane, and 46.5 g (0.80 mol) of propylene oxide. The atmosphere in
the reaction system was then replaced with carbon dioxide by adding
carbon dioxide with stirring, and the autoclave was filled with
carbon dioxide until the pressure in the reaction system reached
1.5 MPa. The temperature of the autoclave was subsequently raised
to 60.degree. C. and polymerization reaction was carried out for 6
hours while supplying carbon dioxide to be consumed by the
reaction.
[0062] The autoclave was cooled and depressurized and its content
was filtrated after the reaction was completed. A filtrated product
was then dried under a reduced pressure to obtain 80.8 g of PPC
(possibly including inevitable impurities; this applies
hereinafter).
[0063] The obtained PPC had the following physical properties and
could thus be identified from the physical properties.
[0064] absorption peaks of IR (KBr): 1742, 1456, 1381, 1229, 1069,
and 787 (each by the unit of cm.sup.-1)
[0065] The obtained PPC had a number average molecular weight of
52000.
[0066] The aliphatic polycarbonate mentioned above has the number
average molecular weight of 52000, but the number average molecular
weight is not limited to this value. An aliphatic polycarbonate
having a number average molecular weight from 5000 to 1000000 is
preferably used herein. A more preferred number average molecular
weight is in the range from 10000 to 500000. A solution of the
aliphatic polycarbonate having a number average molecular weight of
less than 5000 will have problems of low viscosity, difficult
handling, and low dimensional flexibility of the aliphatic
polycarbonate having been patterned. Furthermore, the solution of
the aliphatic polycarbonate having a number average molecular
weight exceeding 1000000 will have problems of high viscosity,
difficult handling, and low dimensional accuracy of the aliphatic
polycarbonate having been patterned.
[Method for Measuring Number Average Molecular Weight of Aliphatic
Polycarbonate]
[0067] The number average molecular weight of the aliphatic
polycarbonate was calculated in the following manner.
[0068] Specifically, a chloroform solution containing the aliphatic
polycarbonate having a concentration of 0.5% by mass was prepared
and measured with use of high performance liquid chromatography.
After the measurement, the molecular weight was calculated by
comparison with polystyrene having an already known number average
molecular weight measured under identical conditions. The
measurement was performed under the following conditions.
[0069] Type: HLC-8020 (Manufactured by Tosoh Corporation)
[0070] Column: GPC column
[0071] (Trade name of Tosoh Corporation: TSK GEL Multipore
HXL-M)
[0072] Column temperature: 40.degree. C.
[0073] Eluate: chloroform
[0074] Flow speed: 1 mL/minute
[0075] (4) Formation of Aliphatic Polycarbonate Layer
[0076] As depicted in FIG. 8, after (2) "formation of gate
insulator and gate electrode layer" described above, an aliphatic
polycarbonate layer 50, that covers the semiconductor layer 20 and
the gate electrode layer 40 disposed above the semiconductor layer
20 with the gate insulator being interposed between the gate
electrode layer 40 and the semiconductor layer 20, is formed in
accordance with the spin coating method in the present embodiment.
More specifically, the method for forming the aliphatic
polycarbonate layer 50 according to the present embodiment is
described below.
[0077] First, a PPC solution containing impurities was produced by
dispersing a solution obtained by dissolving tin acetylacetonate in
propionic acid (hereinafter, also referred to as an "Sn solution")
in a solution of polypropylene carbonate (hereinafter, also
referred to as a "PPC solution"). The PPC as a solute in the PPC
solution according to the present embodiment has a concentration of
6% by mass. The PPC solution according to the present embodiment
contains diethylene-glycol-monoethyl-ether-acetate as a
solvent.
[0078] The aliphatic polycarbonate layer 50 is then formed from the
PPC solution containing impurities as a starting material in
accordance with the spin coating method as described above. In the
present embodiment, the aliphatic polycarbonate layer 50 was formed
through a drying step of drying, at about 180.degree. C., a coating
film formed in accordance with the spin coating method.
[0079] The organic solvent adopted as the PPC solution according to
the present embodiment is not particularly limited if the organic
solvent dissolves an aliphatic polycarbonate. Specific examples of
the organic solvent include, in addition to
diethylene-glycol-monoethyl-ether-acetate mentioned above,
.alpha.-terpineol, .beta.-terpineol, N-methyl-2-pyrrolidone,
isopropyl alcohol, diethylene glycol monobutyl ether acetate,
diethylene glycol monobutyl ether, toluene, cyclohexane, methyl
ethyl ketone, dimethyl carbonate, diethyl carbonate, and propylene
carbonate. Diethylene glycol monoethyl ether acetate,
.alpha.-terpineol, N-methyl-2-pyrrolidone, and propylene carbonate
among these organic solvents are preferably used because each of
these organic solvents has an appropriately high boiling point,
less evaporates at room temperature, and can be uniformly removed
during annealing of an oxide semiconductor precursor to be
obtained.
[0080] The present embodiment is not particularly limited in terms
of methods for producing the metal compound and the PPC solution
containing impurities. According to an adoptable aspect, the
precursor is obtained by stirring the Sn solution and the PPC
solution in accordance with a conventionally known stirring
method.
[0081] Examples of the known stirring method include mixing with
use of a stirrer, and kneading and mixing by rotation and/or
vibration with use of a device such as a mill filled with ceramic
balls.
[0082] In order for improvement in dispersibility of tin
acetylacetonate, a dispersant, a plasticizer, or the like can
further be added to the PPC solution containing impurities where
desired.
[0083] Specific examples of the dispersant include:
[0084] polyhydric alcohol esters such as glycerol and sorbitan;
[0085] polyetherpolyols such as diethylene glycol, triethylene
glycol, dipropylene glycol, tripropylene glycol, polyethylene
glycol, and polypropylene glycol; amines such as
polyethyleneimine;
[0086] (meth)acrylic resins such as polyacrylic acid and
polymethacrylic acid; and
[0087] copolymers of isobutylene or styrene and maleic anhydride,
and amine salts thereof.
[0088] Specific examples of the plasticizer include
polyetherpolyols and phthalate esters.
[0089] (5) Introduction of Dopant into Semiconductor Layer
[0090] The aliphatic polycarbonate layer 50 and the stacked
structure of the semiconductor layer 20, the gate insulator 30, and
the gate electrode layer 40 are subsequently heated at about
400.degree. C. for 20 minutes. Tin (Sn) contained in tin
acetylacetonate in the PPC solution containing impurities is thus
diffused to be introduced into the semiconductor layer 20.
Furthermore, polypropylene carbonate (PPC) as a main material for
the aliphatic polycarbonate layer 50 is decomposed through the heat
treatment and is substantially eliminated.
[TG-DTA (Thermogravimetry and Differential Heat) Properties
Evaluation of PPC]
[0091] TG-DTA properties indicated in FIG. 9 also support the fact
that the aliphatic polycarbonate layer 50 is substantially
eliminated or removed in a process of introducing the dopant into
the semiconductor layer 20. Polypropylene carbonate as the main
material for the aliphatic polycarbonate layer 50 according to the
present embodiment is an aliphatic polycarbonate of an endothermic
decomposition type with excellent thermal decomposition properties.
Such an aliphatic polycarbonate has a high oxygen content and can
be decomposed into a low molecular weight compound at a relatively
low temperature. The aliphatic polycarbonate thus positively
contributes to reduction in amount of remaining impurities such as
carbon impurities after the heat treatment in the process of
introducing the dopant into the semiconductor layer 20.
[0092] FIG. 9 is a graph indicating the TG-DTA properties of the
PPC solution as a starting material for the aliphatic polycarbonate
layer 50 according to the present embodiment. The solid line in
FIG. 9 indicates a thermogravimetry (TG) result whereas the dotted
line in this graph indicates a differential heat (DTA) measurement
result.
[0093] As found from the thermogravimetry result indicated in FIG.
9, there is significant reduction in weight in the range from
around 140.degree. C. to around 190.degree. C., due to elimination
of the solvent of the PPC solution as well as partial decomposition
or elimination of PPC itself. As found from the result indicated in
FIG. 9, 90 wt % or more of PPC is decomposed and eliminated at
around 190.degree. C. PPC is assumed to be decomposed into carbon
dioxide and water by this decomposition. More specifically, it is
found that 95 wt % or more of PPC is decomposed at around
250.degree. C. and almost all (99 wt % or more) of PPC is
decomposed at around 260.degree. C. The aliphatic polycarbonate
layer 50 is thus to be substantially eliminated by being heat
treated at 260.degree. C. or more (more preferably at 300.degree.
C. or more) in the process of introducing the dopant into the
semiconductor layer 20. The aliphatic polycarbonate layer 50 itself
is decomposed through the heat treatment and is substantially
eliminated. It is thus significantly effective that there is no
need to perform additional treatment for removal of a residue, or
simple removal of the residue is sufficient.
[0094] The heat treatment in the process of introducing the dopant
into the semiconductor layer 20 is performed in a nitrogen
atmosphere. However, the atmosphere of the heat treatment is not
limited to a nitrogen atmosphere. According to an adoptable aspect,
the heat treatment is performed in an oxygen atmosphere or in the
atmosphere.
[0095] (6) Formation of Thin Film Transistor
[0096] As depicted in FIG. 10, the thin film transistor 100, that
includes the source electrode 22 and the drain electrode 24
provided partially in the region of the first material layer
serving as the semiconductor layer 20, is formed through the heat
treatment in the process of introducing the dopant into the
semiconductor layer. The dopant is introduced from the aliphatic
polycarbonate layer 50 into the semiconductor layer 20 with the
gate electrode layer 40 substantially serving as a mask in the
present embodiment. Production of a self-aligned thin film
transistor is thus achieved possibly with significant reduction in
the number of process steps as well as in load. The method for
producing the thin film transistor 100 according to the present
embodiment thus achieves change or modification in quality of the
semiconductor layer 20 serving as a matrix with excellent
dimensional accuracy and with quite ease.
[0097] Although not depicted, according to an adoptable aspect,
there is additionally provided a passivation layer that covers the
source electrode 22 and the drain electrode 24 of the thin film
transistor 100.
[0098] Neither the heating steps nor the drying step described
above is particularly limited in terms of its heating method. The
heating method can be exemplified by a conventional heating method
with use of a thermostat, an electric furnace, or the like.
Particularly in a case where a substrate (e.g. the substrate 10;
this applies hereinafter) is less heat-resistant, according to a
preferred aspect, adopted is a method for heating only the heating
target layer by means of ultraviolet rays, electromagnetic waves,
or a lamp for prevention of heat transfer to the substrate.
[0099] For example, in a case where heating by means of ultraviolet
rays (UV) is adopted along with heating the substrate in the
heating step of heating at a temperature causing introduction of
the dopant into the semiconductor layer 20 and decomposition of the
aliphatic polycarbonate layer 50, it is possible to perform heat
treatment only by means of irradiation with ultraviolet rays (UV)
as well as irradiation with ultraviolet rays (UV) in an ozone
(O.sub.3) atmosphere.
[0100] The aliphatic polycarbonate layer 50 is substantially
eliminated by being irradiated with ultraviolet rays (UV) in an
ozone (O.sub.3) atmosphere, even at a temperature lower by about
several tens of degrees (e.g. 200.degree. C. to 240.degree. C.)
than a substrate heating temperature (e.g. 260.degree. C. to
300.degree. C.) of a case of not irradiating with ultraviolet rays
(UV) in an ozone (O.sub.3) atmosphere. Furthermore, irradiation
with ultraviolet rays (UV) in an ozone (O.sub.3) atmosphere will
shorten a period of the heat treatment to the substrate (including
the period of irradiating with ultraviolet rays (UV)). It is noted
that adoption of the step of irradiating the aliphatic
polycarbonate layer 50 with ultraviolet rays (UV) in an ozone
(O.sub.3) atmosphere achieves removal of the aliphatic
polycarbonate layer 50 through such a process at a lower
temperature for a shorter period.
[Electrical Properties of Thin Film Transistor]
[0101] Electrical properties of the thin film transistor 100 were
measured. FIG. 11 is a graph indicating a measurement result of the
transfer properties of the thin film transistor 100. In FIG. 11, an
abscissa axis indicates voltage (Vg) applied to the gate electrode
and an ordinate axis indicates a drain current value (Id).
[0102] As indicated in FIG. 11, the thin film transistor 100 was
found to have sufficient electrical properties as a transistor.
Specifically, as indicated in Table 1, there was found a case where
electric field effect mobility was 20 cm.sup.2/Vs or more. There
was also found a case where an SS value was about 0.2 V/decade and
the ON/OFF ratio of the current value had a value of seven or more
digits. It is thus clarified that the present embodiment will
achieve sufficient electrical properties as a transistor by
changing or modifying the quality of the semiconductor layer 20 of
the thin film transistor 100 with no need for a step under a vacuum
or a low pressure.
TABLE-US-00001 TABLE 1 SS (V/dec.) .mu..sub.FE (cm.sup.2/Vs) ON OFF
##EQU00001## Electrical properties of About 0.2 .gtoreq.20
.gtoreq.10.sup.7 thin film transistor 100
[Analysis on Introduction of Dopant into Semiconductor Layer]
[0103] A detailed mechanism of introduction of the dopant (in the
present embodiment, tin) from the aliphatic polycarbonate layer 50
into the semiconductor layer 20 is unknown at the time of filing of
this application. However, the inventors of this application have
found, through research and analysis, the following facts of great
interest.
[0104] FIG. 12 is a graph indicating a relation between a
concentration (wt %) of the impurities in the PPC solution
containing impurities (tin acetylacetonate (indicated as "Sn
(acac)" in the graph) in the present embodiment) and a sheet
resistance value (.OMEGA./square) of the semiconductor layer
serving as a matrix in the present embodiment. Adopted in this case
was a method similar to the method for forming the source electrode
22 and the drain electrode 24 in the present embodiment, except
that the heating temperature was 400.degree. C. and the heating
period was 10 minutes in this measurement. FIG. 12 indicates
ZrInZnO.sub.x itself in a case where a tin acetylacetonate content
is zero. Found in this measurement was an effect of introducing the
dopant into the semiconductor layer 20 by varying the concentration
of tin acetylacetonate in the PPC solution containing
impurities.
[0105] As indicated in FIG. 12, it was found that the sheet
resistance value of the semiconductor layer 20 decreased
significantly if the tin acetylacetonate content in the PPC
solution containing impurities was 1 wt % or more. It is noted that
the sheet resistance value was decreased by about five digits when
the tin acetylacetonate content was 2 wt % or more.
[0106] FIG. 13 is a graph indicating a relation between a period
(minute) of heating, at a predetermined temperature, a layer made
of the PPC solution containing impurities (tin acetylacetonate in
the present embodiment) having a certain concentration and the
sheet resistance value (.OMEGA./square) of the semiconductor layer
serving as a matrix in the present embodiment. The heating
temperature is 400.degree. C. in this measurement. Tin
acetylacetonate had a concentration of 10 wt % in this measurement.
Adopted in this case was a method similar to the method for forming
the source electrode 22 and the drain electrode 24 in the present
embodiment, except for the above conditions.
[0107] As indicated in FIG. 13, it was found that heat treatment
for 10 minutes decreases the sheet resistance value to about 7900
(.OMEGA./square). It was additionally found that the sheet
resistance value decreases as the heat treatment period is longer.
In terms of reduction in production period, the heat treatment
period in the process of introducing the dopant into the
semiconductor layer 20 is preferably 10 minutes or more and 90
minutes or less.
[0108] The inventors of this application also analyzed a layer made
of a PPC solution containing a low concentration (1.4 wt %) of
impurities (tin acetylacetonate). FIG. 14 is a graph indicating a
relation between a period (minute) of heating, at a predetermined
temperature, a layer made of a PPC solution containing impurities
(tin acetylacetonate) having the low concentration (1.4 wt %) and
the sheet resistance value (.OMEGA./square) of the semiconductor
layer serving as a matrix in the present embodiment. As indicated
in FIG. 14, it was found that heat treatment for only 10 minutes
decreased the sheet resistance value to 6.times.10.sup.5
(.OMEGA./square) even in the case of adopting the PPC solution
containing impurities (tin acetylacetonate) having such a low
concentration of 1.4 wt %. It is also noted that heat treatment for
90 minutes decreases the sheet resistance value to about
1.5.times.10.sup.5 (.OMEGA./square). It was also interestingly
found that the sheet resistance value is not decreased by heating
for over 90 minutes. As described above, heat treatment for over 90
minutes hardly has technical significance.
[0109] It is found from the above results that the sheet resistance
value will be effectively decreased if the content of impurities
(tin acetylacetonate in the present embodiment) in the PPC solution
containing impurities is 1.4 wt % or more. In contrast, in terms of
decrease in sheet resistance value, the PPC solution containing
impurities can contain tin acetylacetonate having a content
exceeding 20 wt %. There is no large variation in the numerical
range from 5 wt % or more as indicated in FIG. 12. It will thus be
hardly useful that tin acetylacetonate in the PPC solution
containing impurities has a content exceeding 20 wt %.
[0110] The inventors of this application found, through research
and analysis, another fact of great interest. When introduction of
the dopant (tin) was intended with use of a layer made only of the
Sn solution as a starting material in place of the aliphatic
polycarbonate layer 50 made of the PPC solution containing
impurities as a starting material in the process of introducing the
dopant into the semiconductor layer 20, it was found that the
semiconductor layer 20 was provided on the surface with a layer
consisting essentially of tin oxide (SnOx) or a residue in an
island shape (hereinafter, also representatively referred to as a
"tin oxide layer").
[0111] FIGS. 15(a) to 15(c) are scanning electron microscope (SEM)
photographs in a planar view of a residue observed after heating,
at 400.degree. C., of the layer made of the PPC solution containing
impurities (tin acetylacetonate in the present embodiment) having a
certain concentration in the present embodiment. FIG. 15(a)
indicates a result of heat treating a layer made of a PPC solution
containing impurities having a concentration of 10 wt %. FIG. 15(b)
indicates a result of heat treating a layer made of a PPC solution
containing impurities having a concentration of 5 wt %. FIG. 15(c)
indicates a result of heat treating a layer made of a PPC solution
containing impurities having a concentration of 1.4 wt %. As
indicated in FIGS. 15(a) to 15(c), as the concentration is lower,
the tin oxide (SnOx) layer or a residue in an island shape
(hereinafter, also representatively referred to as the "tin oxide
layer") was found to be smaller in the number.
[0112] In terms of reduction of a residue, it is preferred to heat
treat a layer made of a PPC solution containing impurities having a
concentration of 5 wt % or less. It was found through further
research and analysis that the tin oxide layer can easily be
removed by applying ultrasonic waves to the tin oxide layer as a
residue immersed in water at least in a case of heat treating a
layer made of a PPC solution containing impurities having a
concentration of 2 wt % or less. It is thus a more preferred aspect
that the concentration is 2 wt % or less in terms of easy removal
of a residue. According to a particularly preferred aspect, the
concentration is 1.4 wt % or less in terms the above point. By
summarizing the above results, according to a preferred aspect, an
amount of impurities as a dopant is 0.1 mol or less with respect to
1 kg of PPC as an example of an aliphatic polycarbonate in a PPC
solution containing impurities in terms of easy removal of a
residue. As already mentioned, also in terms of decrease in sheet
resistance value of the semiconductor layer 20, the content of tin
acetylacetonate as a dopant is preferably 1 wt % or more, i.e. the
amount of the impurities as a dopant is preferably 0.05 mol or
more. The preferred numerical range of the number of moles of the
impurities is also applicable to impurities other than tin
acetylacetonate.
[0113] Further increase of the residue occasionally causes a short
circuit between the source electrode 22 and the drain electrode 24.
In the case of adopting the layer made only of the Sn solution as a
starting material, there is additionally required a step of
removing the tin oxide layer after the source electrode 22 and the
drain electrode 24 are formed. In the other case of adopting the
aliphatic polycarbonate layer 50, the aliphatic polycarbonate layer
50 is decomposed through the heat treatment and is substantially
eliminated in the process of introducing the dopant into the
semiconductor layer 20. The eliminating effect is significant
particularly in the case of adopting impurities having a low
concentration. It would be because part of tin (Sn) in the
aliphatic polycarbonate layer 50 is evaporated and part of the
remaining tin is introduced as a dopant into the semiconductor
layer 20. Adoption of the aliphatic polycarbonate layer 50
according to the present embodiment has technical significance that
no additional treatment is required for removal of a residue (e.g.
the tin oxide layer or a residue in an island shape), or simple
removal of the residue is sufficient.
[0114] The inventors of this application further investigated to
find that the sheet resistance value of the semiconductor layer 20
can be considerably decreased even in a case where the heat
treatment temperature is lower than 400.degree. C. in the process
of introducing the dopant into the semiconductor layer 20. It was
found that generation of the residue was prevented and the sheet
resistance value was decreased to 2 .OMEGA./square or less by heat
treatment at 300.degree. C., for example. The heat treatment at
300.degree. C. or more will thus achieve at least part of the
effects of the thin film transistor 100 according to the present
embodiment.
[0115] The first material layer according to the present embodiment
is the oxide layer consisting essentially of oxygen (O) and zinc
(Zn), indium (In), and zirconium (Zr). However, the first material
layer according to the present embodiment is not limited to this
oxide layer. For example, effects similar to or at least part of
the effects of the present embodiment will be exerted even in a
case where the first material layer is an oxide layer consisting
essentially of oxygen (O) and one, two, or more metals selected
from the group consisting of indium (In), tin (Sn), zinc (Zn),
cadmium (Cd), zirconium (Zr), gallium (Ga), antimony (Sb), and
copper (Cu), other than the oxide mentioned above. Furthermore,
effects similar to or at least part of the effects of the present
embodiment will be exerted even in a case where the first material
layer is made of a substance selected from the group consisting of
silicon (Si) and a silicon compound (represented by SiC or
SiGe).
[0116] The dopant according to the present embodiment is tin (Sn)
possibly serving as an n-type dopant. However, the dopant of the
present embodiment is not limited to this element. Specifically,
the dopant is not particularly limited in terms of its element if
the dopant will serve as an n-type dopant for the first material
layer. According to an adoptable aspect, one, two, or more elements
selected from the group consisting of tin (Sn), fluorine (F),
antimony (Sb), indium (In), gallium (Ga), phosphorus (P), arsenic
(As), and aluminum (Al) serve as an n-type dopant for the first
material layer.
Different Embodiment 1
[0117] The first material layer is adopted as the semiconductor
layer in the first embodiment. However, the first embodiment is not
limited to various first materials. According to a different
preferred aspect, a thin film transistor 200 includes a second
material layer serving as a semiconductor layer 220 to be described
below in place of the first material layer, as depicted in FIG. 16.
Specifically, effects similar to or at least part of the effects of
the thin film transistor 100 according to the first embodiment will
be exerted by combining with the following dopant even in a case
where the second material layer 220 is an oxide layer consisting
essentially of oxygen (O) and one, two, or more metals selected
from the group consisting of copper (Cu), aluminum (Al), gallium
(Ga), strontium (Sr), lanthanum (La), selenium (Se), zinc (Zn),
zirconium (Zr), and antimony (Sb) or a sulfide layer consisting
essentially of sulfur (S) and one, two, or more metals selected
from the group consisting of copper (Cu), aluminum (Al), gallium
(Ga), strontium (Sr), lanthanum (La), selenium (Se), zinc (Zn),
zirconium (Zr), and antimony (Sb). Furthermore, effects similar to
or at least part of the effects of the thin film transistor 100
according to the first embodiment will be exerted by combining with
the following dopant even in a case where the second material layer
220 is made of a substance selected from the group consisting of
silicon (Si) and a silicon compound (represented by SiC or
SiGe).
[0118] The dopant for the second material layer 220 is exemplified
below. The dopant is not particularly limited in terms of its
element if the dopant will serve as a p-type dopant for the second
material layer 220. According to an adoptable aspect, one, two, or
more elements selected from the group consisting of tin (Sn),
fluorine (F), antimony (Sb), indium (In), gallium (Ga), aluminum
(Al), boron (B), and magnesium (Mg) serve as a p-type dopant for
the second material layer 220. Electrical properties similar to
those of the thin film transistor 100 according to the first
embodiment will be achieved by adopting a source electrode 222 and
a drain electrode 224 formed by introducing the p-type dopant.
Different Embodiment 2
[0119] The aliphatic polycarbonate according to the first
embodiment is not particularly limited in terms of its type.
According to a preferably adoptable aspect of the present
embodiment, an aliphatic polycarbonate obtained by polymerization
reaction between an epoxide and carbon dioxide is used. Adoption of
such an aliphatic polycarbonate obtained by polymerization reaction
between an epoxide and carbon dioxide effectively achieves a
desired molecular weight enabling improvement in endothermic
decomposition property by control of the structure of the aliphatic
polycarbonate. The aliphatic polycarbonate is preferably of at
least one type selected from the group consisting of polyethylene
carbonate and polypropylene carbonate in terms of a high oxygen
content and decomposition into a low molecular weight compound at a
relatively low temperature.
[0120] The epoxide is not particularly limited if the epoxide
undergoes polymerization reaction with carbon dioxide to form an
aliphatic polycarbonate having a structure including aliphatic
groups on the main chain. Adoptable examples of the epoxide
according to the present embodiment include ethylene oxide,
propylene oxide, 1-butene oxide, 2-butene oxide, isobutylene oxide,
1-pentene oxide, 2-pentene oxide, 1-hexene oxide, 1-octene oxide,
1-decene oxide, cyclopentene oxide, cyclohexene oxide, styrene
oxide, vinylcyclohexene oxide, 3-phenylpropylene oxide,
3,3,3-trifluoropropylene oxide, 3-naphthylpropylene oxide,
3-phenoxypropylene oxide, 3-naphthoxypropylene oxide, butadiene
monoxide, 3-vinyloxypropylene oxide, and
3-trimethylsilyloxypropylene oxide. Among these epoxides, ethylene
oxide and propylene oxide are preferably used in terms of high
polymerization reactivity with carbon dioxide. These epoxides may
each be used singly or may be used in combinations of two or more
thereof.
[0121] The aliphatic polycarbonate mentioned above has a number
average molecular weight of preferably from 5000 to 1000000 and
more preferably from 10000 to 500000. The aliphatic polycarbonate
having a number average molecular weight of less than 5000 exerts
insufficient effects as a binder and may cause cracks in the
semiconductor layer or deterioration in adhesion between the
substrate and the semiconductor layer. The aliphatic polycarbonate
having a number average molecular weight of more than 1000000 may
be hard to be handled due to lower dissolubility of the aliphatic
polycarbonate in an organic solvent. The numerical value of the
number average molecular weight is measured in accordance with the
"method for measuring number average molecular weight of aliphatic
polycarbonate" described earlier.
[0122] The aliphatic polycarbonate mentioned above can be
exemplarily produced by polymerization reaction between the epoxide
and carbon dioxide in the presence of a metal catalyst.
[0123] Specific examples of the metal catalyst include an aluminum
catalyst and a zinc catalyst. Among these metal catalysts, the zinc
catalyst is preferably used in terms of high polymerization
activity in polymerization reaction between the epoxide and carbon
dioxide. An organozinc catalyst is particularly preferred among the
zinc catalysts.
[0124] Specific examples of the organozinc catalyst include:
[0125] organozinc catalysts such as zinc acetate, diethyl zinc, and
dibutyl zinc; and
[0126] organozinc catalysts obtained by reaction between a zinc
compound and compounds such as primary amine, dihydric phenol,
divalent aromatic carboxylic acid, aromatic hydroxy acid, aliphatic
dicarboxylic acid, and aliphatic monocarboxylic acid.
[0127] According to a preferred aspect, an organozinc catalyst
obtained by reaction of a zinc compound with an aliphatic
dicarboxylic acid and an aliphatic monocarboxylic acid is adopted
from among these organozinc catalysts for higher polymerization
activity.
[0128] The amount of the metal catalyst used for the polymerization
reaction is preferably 0.001 to 20 parts by mass and more
preferably 0.01 to 10 parts by mass with respect to 100 parts by
mass of the epoxide. The polymerization reaction may be unlikely to
progress if the amount of the used metal catalyst is less than
0.001 parts by mass. In contrast, if the amount of the used metal
catalyst exceeds 20 parts by mass, effects in accord with the
amount of use may not be obtained, which may be economically
undesirable.
[0129] A reaction solvent to be used as necessary in the
polymerization reaction is not particularly limited. Any type of an
organic solvent can be adopted as the reaction solvent. Specific
examples of the organic solvent include:
[0130] aliphatic hydrocarbon solvents such as pentane, hexane,
octane, decane, and cyclohexane;
[0131] aromatic hydrocarbon solvents such as benzene, toluene, and
xylene;
[0132] halogenated hydrocarbon solvents such as chloromethane,
methylene dichloride, chloroform, carbon tetrachloride,
1,1-dichloroethane, 1,2-dichloroethane, ethyl chloride,
trichloroethane, 1-chloropropane, 2-chloropropane, 1-chlorobutane,
2-chlorobutane, 1-chloro-2-methylpropane, chlorobenzene, and
bromobenzene; and
[0133] carbonate solvents such as dimethyl carbonate, diethyl
carbonate, and propylene carbonate.
[0134] The amount of the used reaction solvent is preferably 500
parts by mass or more and 10000 parts by mass or less with respect
to 100 parts by mass of the epoxide in terms of smooth
reaction.
[0135] The method for causing the reaction between an epoxide and
carbon dioxide in the presence of a metal catalyst is not
particularly limited in the polymerization reaction described
above. For example, an adoptable method includes charging in an
autoclave the epoxide, the metal catalyst, and a reaction solvent
as necessary, mixing these components, and then injecting carbon
dioxide under pressure for reaction.
[0136] The pressure under which carbon dioxide is used in the
polymerization reaction is not particularly limited. Typically, the
pressure is preferably from 0.1 MPa to 20 MPa, more preferably from
0.1 MPa to 10 MPa, and even more preferably from 0.1 MPa to 5 MPa.
If carbon dioxide is used at a pressure exceeding 20 MPa, effects
in accord with the amount of use may not be obtained, which may be
economically undesirable.
[0137] The polymerization reaction temperature in the above
polymerization reaction is not particularly limited. The typical
polymerization reaction temperature is preferably from 30 to
100.degree. C. and more preferably from 40 to 80.degree. C. If the
polymerization reaction temperature is lower than 30.degree. C.,
the polymerization reaction may take a long period. In contrast, if
the polymerization reaction temperature exceeds 100.degree. C.,
side reaction may occur to reduce a yield. The period of the
polymerization reaction is typically preferred to be from 2 to 40
hours, although the period differs depending on the polymerization
reaction temperature and cannot be determined generally.
[0138] After the completion of the polymerization reaction, the
aliphatic polycarbonate will be obtained by filtration or the like,
and washing with a solvent or the like as necessary, followed by
drying.
Different Embodiment 3
[0139] In the imprinting step according to the first embodiment,
preferably, mold releasing treatment is preliminarily applied to
the surface of each precursor layer to be in contact with an
imprinting surface and/or to the imprinting surface of the mold,
and each precursor layer is then subjected to imprinting. Such
treatment can decrease frictional force between each precursor
layer and the mold. Each precursor layer can thus be subjected to
imprinting with higher accuracy. Examples of an applicable mold
releasing agent in the mold releasing treatment include surfactants
(e.g. a fluorosurfactant, a silicone surfactant, and a non-ionic
surfactant), and diamond-like carbon containing fluorine.
[0140] The thin film transistors 100 and 200 exemplifying a
semiconductor device are described in the above embodiments.
However, these embodiments are not limitedly applicable to a thin
film transistor. For example, the techniques or technical ideas
disclosed or suggested in the above embodiments are applicable to
various semiconductor devices to which a self-aligning technique is
applicable.
[0141] As described above, the above embodiments have been
disclosed not for limiting the present invention but for describing
these embodiments. Furthermore, modification examples made within
the scope of the present invention, inclusive of other combinations
of the embodiments, will also be included in the scope of the
patent claims.
INDUSTRIAL APPLICABILITY
[0142] The present invention is widely applicable to the field of
electronic devices such as mobile terminals, information
appliances, sensors, other known electric appliances, micro electro
mechanical systems (MEMS), nano electro mechanical systems (NEMS),
and medical equipment including various types of semiconductor
devices.
DESCRIPTION OF REFERENCE SIGNS
[0143] 10 Substrate [0144] 20 Semiconductor layer [0145] 30 Gate
insulator [0146] 40 Gate electrode layer [0147] 50 Aliphatic
polycarbonate layer [0148] 100, 200 Thin film transistor [0149] M1
Precursor layer mold
* * * * *