U.S. patent application number 15/959828 was filed with the patent office on 2018-08-23 for light emitting device and method of manufacturing a light emitting device.
The applicant listed for this patent is PIONEER CORPORATION. Invention is credited to Takeru OKADA, Ayako YOSHIDA.
Application Number | 20180241002 15/959828 |
Document ID | / |
Family ID | 54194135 |
Filed Date | 2018-08-23 |
United States Patent
Application |
20180241002 |
Kind Code |
A1 |
OKADA; Takeru ; et
al. |
August 23, 2018 |
LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING A LIGHT EMITTING
DEVICE
Abstract
A light emitting portion (200) is formed on a first surface of a
substrate (100) (upper surface of the substrate (100) in an example
illustrated in FIG. 1). A sealing member (300) seals the light
emitting portion (200). In addition, the substrate (100) includes a
first resin layer (110), a first inorganic layer (120), and a
second resin layer (130). The first resin layer (110) is formed of
a first resin material. The second resin layer (130) is formed of
the first resin material, and is positioned closer to the first
surface side of the substrate (100) than the first resin layer
(110). The first inorganic layer (120) is positioned between the
first resin layer (110) and the second resin layer (130).
Inventors: |
OKADA; Takeru;
(Kawasaki-shi, JP) ; YOSHIDA; Ayako;
(Yonezawa-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
PIONEER CORPORATION |
TOKYO |
|
JP |
|
|
Family ID: |
54194135 |
Appl. No.: |
15/959828 |
Filed: |
April 23, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15128384 |
Sep 22, 2016 |
9978987 |
|
|
PCT/JP2014/058041 |
Mar 24, 2014 |
|
|
|
15959828 |
|
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|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/004 20130101;
B32B 2457/206 20130101; H01L 51/003 20130101; B32B 2307/422
20130101; Y02E 10/549 20130101; B32B 27/08 20130101; H01L 2251/5369
20130101; Y02P 70/521 20151101; H01L 51/5268 20130101; H01L 51/5253
20130101; Y02P 70/50 20151101; H01L 51/0097 20130101; B32B 2457/00
20130101; H01L 51/5256 20130101 |
International
Class: |
H01L 51/52 20060101
H01L051/52; H01L 51/00 20060101 H01L051/00; B32B 27/08 20060101
B32B027/08 |
Claims
1. A light emitting device, comprising: a flexible substrate; a
light emitting portion formed over a first surface of the
substrate; and a sealing portion sealing the light emitting
portion, wherein the substrate includes: a first resin layer which
has a first resin material, a second resin layer which has the
first resin material and is positioned closer to the first surface
side than the first resin layer, and a first inorganic layer which
is positioned between the first resin layer and the second resin
layer.
2. The light emitting device according to claim 1, wherein the
first resin layer is thinner than the second resin layer.
3. The light emitting device according to claim 2, wherein the
first resin material has an imide bond.
4. The light emitting device according to claim 2, wherein further
includes a second inorganic layer formed over a first surface side
of the second resin layer.
5. The light emitting device according to claim 2, wherein the
substrate is formed by forming the first resin layer, the first
inorganic layer, and the second resin layer over a support
substrate, and then by removing the support substrate.
6. The light emitting device according to claim 5, wherein the
first resin layer includes a plurality of particles.
7. The light emitting device according to claim 5, wherein the
substrates further includes a third resin layer which is disposed
closer to the first surface side than the second resin layer, and
the third resin layer is formed of a second resin material which is
different from the first resin material.
8. A method of manufacturing a light emitting device, comprising:
forming a substrate over a support substrate; forming a light
emitting portion over the substrate; and forming a sealing portion
sealing the light emitting portion over the substrate, wherein the
step of forming the substrate includes: forming a first resin layer
over the support substrate by using a first resin material; forming
a first inorganic layer over the first resin layer; and forming a
second resin layer over the first inorganic layer by using the
first resin material.
9. The method of manufacturing a light emitting device according to
claim 8, further comprising removing the support substrate from the
substrate.
10. The method of manufacturing a light emitting device according
to claim 9, wherein the step of forming the first resin layer
includes forming the first resin layer over a surface of the
support substrate having concavities and convexities.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation application of U.S.
patent application Ser. No. 15/128,384, filed Sep. 22, 2016, which
claims priority from National Stage entry of PCT Application No.
PCT/JP2014/058041, filed on Mar. 24, 2014, the contents of which
are incorporated by reference.
TECHNICAL FIELD
[0002] The present invention relates to a light emitting device and
a method of manufacturing a light emitting device.
BACKGROUND ART
[0003] Recently, development of organic EL elements is proceeding.
It has been carried out on the use of a resin film as a substrate
for forming an organic EL element. For example, Patent Document 1
discloses alternately laminating a resin film, which is a polymer
film, and an inorganic film on both surfaces of a resin film
substrate, and then forming a light emitting element on the resin
film substrate. In Patent Document 1, the resin film substrate is
formed of polyethylene terephthalate and the like, the resin film
is formed of an ultraviolet curable monomer and the like, and the
inorganic film is formed of SiO.sub.2, Al.sub.2O.sub.3, ZnO, ITO,
and the like.
[0004] In addition, Patent Document 2 discloses forming a polyimide
molded article by applying varnish onto a support such as a glass
substrate or a resin film, drying and curing the varnish, and then
removing the support.
RELATED DOCUMENT
Patent Document
[0005] [Patent Document 1] Japanese Patent Application Laid-Open
Publication No. 2004-1296
[0006] [Patent Document 2] Japanese Patent Application Laid-Open
Publication No. 2007-169304
SUMMARY OF THE INVENTION
[0007] The present inventors have considered forming a resin
substrate on a support substrate, then forming a light emitting
portion on the resin substrate, and then removing the support
substrate. In such a structure, it is preferable that the resin
substrate has a multilayer structure. However, thermal stress may
occur in the resin substrate due to the multilayer structure after
the resin substrate is peeled off from the support substrate. In a
case where thermal stress occurs in the resin substrate, warping
may occur in the light emitting device.
[0008] An exemplary object of the present invention is to prevent
the occurrence of warping in the light emitting device even in a
case where the resin substrate and the light emitting portion are
formed on the support substrate, and thereafter, the support
substrate is removed from the resin substrate.
[0009] The invention according to claim 1 is a light emitting
device including: a flexible substrate; a light emitting portion
formed over a first surface of the substrate; and a sealing portion
sealing the light emitting portion, in which the substrate includes
a first resin layer which has a first resin material, a second
resin layer which has the first resin material and is positioned
closer to the first surface side than the first resin layer, and a
first inorganic layer which is positioned between the first resin
layer and the second resin layer.
[0010] The invention according to claim 8 is a method of
manufacturing a light emitting device including the steps of:
forming a substrate over a support substrate; forming a light
emitting portion over the substrate; and forming a sealing portion
sealing the light emitting portion over the substrate, in which the
step of forming the substrate includes the steps of: forming a
first resin layer over the support substrate by using a first resin
material, forming a first inorganic layer over the first resin
layer, and forming a second resin layer over the first inorganic
layer by using the first resin material.
[0011] The object described above, other objects, characteristic,
and advantages will be more obvious by preferred embodiments
described below and the following drawings associated with the
embodiments.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a sectional view illustrating a configuration of a
light emitting device according to an embodiment.
[0013] FIGS. 2(a) and 2(b) are sectional views illustrating a
method of manufacturing the light emitting device illustrated in
FIG. 1.
[0014] FIG. 3 is a sectional view illustrating a method of
manufacturing the light emitting device illustrated in FIG. 1.
[0015] FIG. 4 is a sectional view illustrating a configuration of a
light emitting device according to Example 1. [0016] FIG. 5 is a
sectional view illustrating a configuration of a light emitting
device according to Example 2.
[0017] FIG. 6 is a sectional view illustrating a configuration of a
light emitting device according to Example 3.
[0018] FIG. 7 is a sectional view illustrating a method of
manufacturing a light emitting device according to Example 4.
DESCRIPTION OF EMBODIMENTS
[0019] Hereinafter, embodiments of the present invention will be
described by using the drawings. Furthermore, in all the drawings,
the same reference numerals are applied to the same constituents,
and the description thereof will not be repeated.
[0020] FIG. 1 is a sectional view illustrating a configuration of a
light emitting device 10 according to an embodiment. The light
emitting device 10 according to the embodiment includes a flexible
substrate 100, a light emitting portion 200, and a sealing member
300 (a sealing portion). The light emitting portion 200 is formed
on a first surface of the substrate 100 (upper surface in an
example illustrated in FIG. 1). The sealing member 300 seals the
light emitting portion 200. In addition, the substrate 100 includes
a first resin layer 110, a first inorganic layer 120, and a second
resin layer 130. The first resin layer 110 is formed of a first
resin material. The second resin layer 130 is formed of the first
resin material, the second resin layer 130 being positioned closer
to the first surface side of the substrate 100 than the first resin
layer 110. The first inorganic layer 120 is positioned between the
first resin layer 110 and the second resin layer 130. The thickness
of the substrate 100, for example, is greater than or equal to 20
.mu.m and less than or equal to 300 .mu.m. Hereinafter, the details
will be described.
[0021] The first resin layer 110 and the second resin layer 130,
for example, are formed by applying a first resin material onto a
support substrate 400 (described below by using FIGS. 2 and 3). The
first resin material is preferably a resin having an imide bond,
for example, a polyimide resin. In addition, the first resin layer
110 is preferably thinner than the second resin layer 130. The film
thickness of the first resin layer 110, for example, is greater
than or equal to 5 .mu.m and less than or equal to 100 .mu.m, and
the film thickness of the second resin layer 130, for example, is
greater than or equal to 10 .mu.m and less than or equal to 200
.mu.m. The second resin layer 130 maybe formed of a resin material
which is different from the first resin layer 110.
[0022] Furthermore, the surface of the substrate 100 on a side
opposite to the first surface (a second surface: a surface on a
lower side in FIG. 1) is formed of the first resin layer 110. A
surface roughness Ra of the second surface is lower than a surface
roughness Ra of the surface of the first resin layer 110 on a side
opposite to the second surface (in the example illustrated in FIG.
1, a surface which is in contact with the first inorganic layer
120). As described below, this is because the first resin layer 110
is formed by using the support substrate 400.
[0023] The first inorganic layer 120, for example, is a silicon
oxide film, a silicon nitride film, or a silicon oxynitride film,
and functions as a film (a moisture proof film and/or a barrier
film) which prevents moisture or oxygen from being transmitted
through the substrate 100 in a thickness direction. The film
thickness of the first inorganic layer 120, for example, is greater
than or equal to 20 nm and less than or equal to 2 .mu.m. In
addition, a ratio of the thickness of the first inorganic layer 120
to the thickness of the substrate 100, for example, is greater than
or equal to 0.01% and less than or equal to 10%. The first
inorganic layer 120, for example, is formed by using vapor phase
growth methods such as a sputtering method, a CVD method, or an ALD
method. The first inorganic layer 120 is formed of a material
having a Young's modulus which is higher than that of the first
resin material. For this reason, the Young's modulus of the first
inorganic layer 120 is greater than that of the first resin layer
110 and that of the second resin layer 130.
[0024] In addition, in the example illustrated in FIG. 1, the
substrate 100 includes a third resin layer 140. The third resin
layer 140 is formed closer to the first surface side of the
substrate 100 than the second resin layer 130, and is disposed for
planarizing the first surface of the substrate 100. The third resin
layer 140, for example, is formed of a photocurable acrylic resin.
The linear expansion coefficient of the material (a second resin
material) configuring the third resin layer 140 is different from
the linear expansion coefficient of the first resin material. The
linear expansion coefficient of the material (the second resin
material) configuring the third resin layer 140 may be greater than
the linear expansion coefficient of the first resin material, or
may be less than the linear expansion coefficient of the first
resin material.
[0025] In addition, in the example illustrated in FIG. 1, the
substrate 100 includes a second inorganic layer 122 between the
second resin layer 130 and the third resin layer 140. The second
inorganic layer 122 has the same configuration as that of the first
inorganic layer 120. In this case, an inorganic layer exists on a
first surface side and a second surface side of the second resin
layer 130, and thus, it is possible to suppress the occurrence of
warping in the substrate 100. Furthermore, the second inorganic
layer 122 may be omitted.
[0026] Furthermore, in a case where the light emitting device 10 is
a bottom emission type light emitting device, each layer
configuring the substrate 100 has light transmissivity with respect
to light emitted from the light emitting portion 200.
[0027] The light emitting portion 200 is formed on the first
surface of the substrate 100. The light emitting portion 200
includes a light emitting element such as an organic EL element. In
a case where the light emitting element is an organic EL element,
the light emitting element has a configuration in which the organic
layer is interposed between a first electrode and a second
electrode.
[0028] At least one of the first electrode and the second electrode
is a light transmissive electrode. In addition, the other
electrode, for example, is formed of metal such as Al or Ag. The
light transmissive electrode, for example, is a mesh-like electrode
of which the material is a nanowire formed of an inorganic material
such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO), a
conductive polymer such as a polythiophene derivative, or silver or
carbon. In a case where the light emitting element is a bottom
emission type light emitting device, an electrode on the substrate
100 side is the light transmissive electrode, and an electrode on a
side opposite to the substrate 100 is an electrode formed of Al,
Ag, and the like which reflects light. In addition, in a case where
the light emitting element is a top emission type light emitting
device, the electrode on a side opposite to the substrate 100 is
the light transmissive electrode, and the electrode on the
substrate 100 side is the electrode formed of Al, Ag, and the like
which reflects light. Furthermore, the light emitting element may
be a light transmissive light emitting device in which both of the
electrodes (the first electrode and the second electrode) are light
transmissive electrodes (a dual emission type light emitting
device).
[0029] The organic layer has a configuration in which a hole
transport layer, a light emitting layer, and an electron transport
layer are laminated in this order. In a case where the first
electrode is a positive electrode, the hole transport layer is
formed on the first electrode. In addition, in a case where the
first electrode is a negative electrode, the electron transport
layer is formed on the first electrode. Furthermore, the hole
injection layer may be disposed between the hole transport layer
and the light emitting layer, or the electron injection layer may
be disposed between the electron transport layer and the light
emitting layer. Each layer of the organic layer may be formed by a
coating method or may be formed by a vapor deposition method, or a
part thereof may be formed by a coating method and the remaining
part may be formed by a vapor deposition method. Furthermore, the
organic layer may be formed by a vapor deposition method using a
vapor deposition material, and may be formed by an ink jet method,
a printing method, and a spray method using a coating material.
[0030] Furthermore, in a case where the light emitting device 10 is
an illumination device, the light emitting portion 200 may include
only one light emitting element, or may include a plurality of
light emitting elements. In the latter case, the light emitting
portion 200 may include a plurality of light emitting elements
emitting light having colors which are different from each other
(for example, red, green, and blue). In this case, terminals of the
plurality of types of light emitting elements are disposed to be
independent from each other. In addition, in a case where the light
emitting portion 200 is a display device, the plurality of types of
light emitting elements are arranged in the light emitting portion
200 in the shape of a matrix.
[0031] The light emitting portion 200 is sealed by the sealing
member 300. In the example illustrated in this drawing, the light
emitting portion 200 is a metal foil or a metal plate (for example,
an Al foil or an Al plate), and is fixed to the first surface of
the substrate 100 by using an adhesive layer 310.
[0032] FIGS. 2 and FIG. 3 are sectional views illustrating a method
of manufacturing the light emitting device 10 illustrated in FIG.
1. First, as illustrated in each drawing of FIGS. 2, the substrate
100 is formed by using the support substrate 400. The support
substrate 400, for example, is a glass substrate, and has a lower
surface roughness Ra. In this case, the surface roughness Ra of the
support substrate 400 which is the glass substrate may be less than
the surface roughness Ra on the second surface side of the first
resin layer 110.
[0033] Specifically, as illustrated in FIG. 2(a), the first resin
material is applied onto the support substrate 400, and thus the
first resin layer 110 is formed. The first resin layer 110, for
example, is formed by using a die coater, and maybe formed by using
a spin coating method or a screen printing method. As described
above, since the surface roughness Ra of the support substrate 400
is low, the surface roughness Ra of the second surface (the surface
on the support substrate 400 side) of the first resin layer 110 is
also low.
[0034] Next, as illustrated in FIG. 2(b), the first inorganic layer
120 is formed on the first resin layer 110 by using a vapor phase
growth method. Next, the second resin layer 130 is formed on the
first inorganic layer 120. A formation method of the second resin
layer 130 is similar to that of the first resin layer 110. Further,
the second inorganic layer 122 is formed on the second resin layer
130. A formation method of the second inorganic layer 122 is
similar to that of the first inorganic layer 120. Further, the
third resin layer 140 is formed on the second inorganic layer 122.
A formation method of the third resin layer 140 is also similar to
that of the first resin layer 110. Thus, the substrate 100 is
formed. Furthermore, in a case where the second inorganic layer 122
is omitted, the third resin layer 140 is formed on the second resin
layer 130.
[0035] Thus, by superposing the first inorganic layer 120, the
second resin layer 130, the second inorganic layer 122, and the
third resin layer 140, defects (also called voids) of the first
inorganic layer 120 are filled with the second resin layer 130.
However, moisture, oxygen, or the like may infiltrate through a
part of the second resin layer 130 filling the defect. Regardless,
in the example illustrated in FIG. 2(b), the second inorganic layer
122 is formed on the second resin layer 130, and thus, it is
possible to prevent such moisture, oxygen, or the like from
infiltrating. In addition, the third resin layer 140 is formed on
the second inorganic layer 122, and thus, it is possible to more
flatly form a lower electrode described below. In this case, it is
possible to suppress the occurrence of a leakage or the like.
[0036] Next, as illustrated in FIG. 3, the first electrode, the
organic layer, and the second electrode of the light emitting
portion 200 are formed on the substrate 100 in this order in a
state where the substrate 100 is positioned on the support
substrate 400. The sealing member 300 is then fixed to the
substrate 100 by using the adhesive layer 310. Thereafter, the
substrate 100, the light emitting portion 200, and the sealing
member 300 are detached from the support substrate 400.
[0037] In the forming step of the light emitting device 10
described above, the substrate 100 is heated. For this reason,
thermal stress occurs in the substrate 100. The thermal stress is
caused by the first inorganic layer 120 and the second inorganic
layer 122 in addition to the first resin layer 110, the second
resin layer 130, and the third resin layer 140 described above. For
example, the magnitude of thermal deformation which occurs in the
first resin layer 110 and the second resin layer 130 is larger than
the magnitude of thermal deformation which occurs in the first
inorganic layer 120 and the second inorganic layer 122.
[0038] Furthermore, a plurality of light emitting devices 10 is
formed by using one support substrate 400, and thereafter, the
plurality of light emitting devices 10 maybe separated from each
other. This separating step may be performed before the substrate
100, the light emitting portion 200, and the sealing member 300 are
detached from the support substrate 400, or may be performed after
the substrate 100, the light emitting portion 200, and the sealing
member 300 are detached from the support substrate 400. In the
latter case, the support substrate 400 may be reused.
[0039] As described above, according to this embodiment, the
substrate 100 includes the first inorganic layer 120 between the
first resin layer 110 and the second resin layer 130. The Young's
modulus of the material configuring the first inorganic layer 120
is higher than the Young's modulus of the material configuring the
first resin layer 110 and the second resin layer 130. For this
reason, even when the substrate 100 is detached from the support
substrate 400, it is possible to prevent the substrate 100 from
warping due to thermal stress. In addition, since the first resin
layer 110 and the second resin layer 130 are formed of the same
resin material (the first resin material), warping of the substrate
100 can be prevented, compared to when the first resin layer 110
and the second resin layer 130 are formed of resin materials which
are different from each other. Further, forming the second
inorganic layer 122 allows arrangement of the inorganic layers
having high Young's moduli on both sides of the substrate 100, and
thus, it is possible to further prevent the substrate from
warping.
[0040] In particular, in this embodiment, the substrate 100
includes the third resin layer 140. The third resin layer 140 is
formed of a material which is different from that of the first
resin layer 110 and the second resin layer 130, and thus, thermal
stress particularly easily occurs in the substrate 100. Regardless,
as described above, since the substrate 100 includes the first
inorganic layer 120, it is possible to prevent the substrate 100
from warping due to thermal stress.
[0041] In addition, the first resin layer 110 is disposed between
the support substrate 400 and the first inorganic layer 120. For
this reason, the substrate 100 is easily peeled off from the
support substrate 400, compared to a case where the support
substrate 400 is in contact with the first inorganic layer 120.
EXAMPLES
Example 1
[0042] FIG. 4 is a sectional view illustrating a configuration of
the light emitting device 10 according to Example 1. The light
emitting device 10 according to this example has the same
configuration as that of the light emitting device 10 according to
the embodiment except for the configuration of the substrate
100.
[0043] In Example 1, the substrate 100 includes a third inorganic
layer 124 on the third resin layer 140. For this reason, in this
example, the first surface of the substrate 100 is configured of
the third inorganic layer 124. The third inorganic layer 124 is
formed of the same material as that of the first inorganic layer
120, and is formed by using a similar method as that of the first
inorganic layer 120.
[0044] According to Example 1, the substrate 100 includes the first
inorganic layer 120, and thus, it is possible to prevent the
substrate 100 from warping due to thermal stress. In addition, the
third inorganic layer 124 is disposed, and thus, it is possible to
further prevent the substrate 100 from warping due to thermal
stress, and it is possible to further prevent moisture or the like
from being transmitted in the thickness direction of the substrate
100.
Example 2
[0045] FIG. 5 is a sectional view illustrating a configuration of
the light emitting device 10 according to Example 2. The light
emitting device 10 according to this example has the same
configuration as that of the light emitting device 10 according to
the embodiment or Example 1 except that a sealing film 302 (a
sealing portion) is formed instead of the sealing member 300. FIG.
5 illustrates the same case as that of Example 1.
[0046] The sealing film 302, for example, is an aluminum oxide
film, and for example, is formed by using an Atomic Layer
Deposition (ALD) method. Furthermore, for example, titanium oxide,
silicon oxide, silicon oxynitride, or a laminated body thereof may
be used as the material of the sealing film 302. The film thickness
of the sealing film 302, for example, is greater than or equal to
10 nm and less than or equal to 2 .mu.m. The sealing film 302
covers the light emitting portion 200 and at least a portion of the
substrate 100 positioned around the light emitting portion 200.
Furthermore, the sealing film 302 may be formed by a film formation
method other than the ALD method, and for example, may be formed by
using a CVD method. The sealing film 302 is formed after the light
emitting portion 200 is formed and before the support substrate 400
is detached from the substrate 100. The Young's modulus of the
substrate 100 on which the sealing film 302 is formed is higher
than that of the substrate 100 on which the sealing film 302 is not
formed.
[0047] According to Example 2, the substrate 100 includes the first
inorganic layer 120 and the sealing film 302, and thus, it is
possible to prevent the substrate 100 from warping due to thermal
stress.
Example 3
[0048] FIG. 6 is a sectional view illustrating a configuration of
the light emitting device 10 according to Example 3. The light
emitting device 10 according to this example has the same
configuration as any one of the embodiment and Examples 1 and 2
except that a plurality of particles 112 are introduced into the
first resin layer 110. FIG. 6 illustrates the same case as that of
Example 1.
[0049] The particles 112 are introduced into the first resin layer
110 in order to increase efficiency of light extraction from the
substrate 100 by scattering light. The particles 112, for example,
are formed of an inorganic oxide such as titanium oxide, zirconium
oxide, yttrium oxide, aluminum oxide, or silicon oxide, and the
average particle diameter thereof, for example, is greater than or
equal to 20 nm and less than or equal to 2 .mu.m. It is desirable
that the refractive index of the material configuring the particles
112 is high. By adjusting the content of the particles 112 in the
first resin layer 110, it is possible to set Haze value of the
first resin layer 110 to be approximately 90%. The particles 112
are mixed in advance in a coating material which becomes the first
resin layer 110 and the second resin layer 130.
[0050] Furthermore, a resin layer for planarizing may be disposed
between the first resin layer 110 and the first inorganic layer
120. The resin layer, for example, is formed by using the same
material as that of the third resin layer 140.
[0051] According to Example 3, the substrate 100 includes the first
inorganic layer 120, and thus, it is possible to prevent the
substrate 100 from warping due to thermal stress. In addition, the
plurality of particles 112 introduced into the first resin layer
110 makes it possible to increase light extraction efficiency of
the light emitting device 10 even when a light extraction film is
not bonded to the first resin layer 110. In addition, since the
first resin layer 110 includes the plurality of particles 112, the
Young's modulus becomes comparatively high. For this reason, the
Young's modulus of the substrate 100 is high compared to when the
plurality of particles 112 are not included.
[0052] In addition, a part of the particles 112 is in contact with
the support substrate 400, and thus, an adhesive force between the
first resin layer 110 and the support substrate 400 is weakened.
Accordingly, the substrate 100 is easily detached from the support
substrate 400. In addition, the thermal expansion coefficient of
the first resin layer 110 becomes low by introducing the particles
112. Accordingly, the substrate 100 is rarely warped.
Example 4
[0053] FIG. 7 is a sectional view for illustrating a method of
manufacturing the light emitting device 10 according to Example 4,
and corresponds to FIG. 3 of the embodiment. The method of
manufacturing the light emitting device 10 according to this
example has the same configuration as that of the method of
manufacturing the light emitting device 10 according to anyone of
the embodiment and Examples 1 to 3 except that fine concavities and
convexities are formed on the surface of the support substrate 400
onto which the substrate 100 is formed. Fine concavities and
convexities are formed on the second surface (a light extraction
surface) of the first resin layer 110 of the substrate 100. A
height difference in the concavities and convexities, for example,
is greater than or equal to 50 nm and less than or equal to 5
.mu.m, and a distance between adjacent convex portions, for
example, is greater than or equal to 100 nm and less than or equal
to 200 .mu.m.
[0054] According to Example 4, the substrate 100 includes the first
inorganic layer 120, and thus, it is possible to prevent the
substrate 100 from warping due to thermal stress. In addition, the
fine concavities and convexities are formed on the second surface
(the light extraction surface) of the first resin layer 110 of the
substrate 100, and thus, even in a case where the light extraction
film is not bonded to the first resin layer 110, it is possible to
increase the light extraction efficiency of the light emitting
device 10.
[0055] As described above, the embodiment and the examples will be
described with reference to the drawings, but the embodiment and
the examples are an example of the present invention, and various
configurations other than the configurations described above are
able to be adopted.
* * * * *