U.S. patent application number 15/808867 was filed with the patent office on 2018-07-05 for in-cell touch display panel.
The applicant listed for this patent is HannStar Display Corporation, HannStar Display (Nanjing) Corporation. Invention is credited to Cheng-Yen YEH.
Application Number | 20180188584 15/808867 |
Document ID | / |
Family ID | 62711589 |
Filed Date | 2018-07-05 |
United States Patent
Application |
20180188584 |
Kind Code |
A1 |
YEH; Cheng-Yen |
July 5, 2018 |
IN-CELL TOUCH DISPLAY PANEL
Abstract
The in-cell touch display panel has a display area and a
non-display area. Display IC bounding pads and touch pads are
disposed in the non-display area. A touch electrode corresponds to
more than one pixel structures. A touch sensing line is
electrically connected to the touch electrode and one of the touch
pads. A data line is electrically connected to a thin film
transistor and one of the display pads. At least one of the display
pads is disposed between two of the touch pads, and at least one of
the touch pads is disposed between two of the display pads.
Inventors: |
YEH; Cheng-Yen; (Taichung
City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
HannStar Display (Nanjing) Corporation
HannStar Display Corporation |
Nanjing
Taipei City |
|
CN
TW |
|
|
Family ID: |
62711589 |
Appl. No.: |
15/808867 |
Filed: |
November 9, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G06F 3/044 20130101;
G02F 1/1339 20130101; G02F 1/134309 20130101; H01L 27/124 20130101;
G02F 1/1337 20130101; G02F 1/136286 20130101; G06F 3/0446 20190501;
G06F 3/0445 20190501; G02F 1/13394 20130101; G06F 3/0443 20190501;
G02F 1/13338 20130101; G02F 2201/121 20130101; G02F 2001/13396
20130101; G06F 3/0412 20130101 |
International
Class: |
G02F 1/1333 20060101
G02F001/1333; G02F 1/1368 20060101 G02F001/1368; G02F 1/1362
20060101 G02F001/1362; G02F 1/1343 20060101 G02F001/1343; H01L
27/12 20060101 H01L027/12; H01L 29/786 20060101 H01L029/786; H01L
29/24 20060101 H01L029/24; G06F 3/041 20060101 G06F003/041; G06F
3/044 20060101 G06F003/044 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 29, 2016 |
CN |
201611243632.6 |
Claims
1. An in-cell touch display panel having a display area and a
non-display area, wherein the in-cell touch display panel
comprises: a first substrate; a plurality of data lines disposed on
the first substrate along a first direction; a plurality of gate
lines disposed along a second direction, wherein an angle is formed
between the first direction and the second direction; a plurality
of touch sensing lines disposed on the first substrate and
electrically insulated from the data lines and the gate lines; a
plurality of pixel regions formed in the display area surrounded by
the gate lines and the data lines intersecting with each other,
wherein each of the pixel regions comprises a pixel structure, and
each of the pixel structures comprises a pixel electrode; a common
electrode comprising a plurality of touch electrodes, wherein each
of the touch electrodes corresponds to more than one of the pixel
electrodes, and each of the pixel electrodes corresponds to a
sub-common electrode which is a part of the touch electrode; a
plurality of thin film transistors (TFTs) formed in the pixel
structures, wherein each of the thin film transistors comprises a
gate, a source, a drain and a semiconductor layer; a second
substrate, wherein a liquid crystal layer is formed between the
first substrate and the second substrate; and a plurality of
display pads and a plurality of touch pads, the display pads and
the touch pads being disposed in the non-display area, wherein each
of the touch electrodes is electrically connected to at least one
of the touch sensing lines, and each of the touch sensing lines is
electrically connected to one of the touch pads; each of the
sources is electrically connected to one of the data lines, and
each of the data lines is electrically connected to one of the
display pads; and at least one of the display pads is disposed
between two of the touch pads, and at least one of the touch pads
is disposed between two of the display pads.
2. The in-cell touch display panel of claim 1, wherein the data
lines are parallel to the touch sensing lines in the display area,
and the data lines are not overlapped with the touch sensing lines
in the non-display area.
3. The in-cell touch display panel of claim 1, wherein the data
lines are partially overlapped with the touch sensing lines along a
normal vector of the first substrate in the display area; and the
data lines and the touch sensing lines are formed in different
metal layers in the display area.
4. The in-cell touch display panel of claim 1, wherein the data
lines are parallel to the touch sensing lines in the display area;
and the data lines and the touch sensing lines are formed in a same
metal layer in the display area.
5. The in-cell touch display panel of claim 1, wherein at least two
of the touch sensing lines are electrically connected to each other
and to one of the touch pads through a conductive line.
6. The in-cell touch display panel of claim 1, wherein a number of
the touch pads is less than a number of the display pads, the
display pads and the touch pads are arranged as a plurality of
rows, and one of the rows comprises at least part of the touch
pads.
7. The in-cell touch display panel of claim 1, wherein the display
pads are disposed between the touch pads and the display area.
8. The in-cell touch display panel of claim 1, wherein the touch
pads are disposed between the display pads and the display
area.
9. The in-cell touch display panel of claim 1, wherein a number of
the touch pads is less than a number of the display pads, the
display pads and the touch pads are arranged as a plurality of
rows, wherein a first row of the rows only comprises a portion of
the display pads, and a second row of the rows comprises a portion
of the display pads and a portion of the touch pads.
10. The in-cell touch display panel of claim 9, wherein the first
row is disposed between the display area and the second row.
11. The in-cell touch display panel of claim 9, wherein the second
row is disposed between the display area and the first row.
12. The in-cell touch display panel of claim 1, further comprising
a driving circuit disposed in the non-display area and electrically
connected to the display pads and the touch pads, wherein in a
display period, the driving circuit transmits pixel data to the
pixel electrodes through the data lines and the TFTs; and in a
touch period, the driving circuit generates a touch sensing signal
according to a voltage on one of the touch electrodes.
13. The in-cell touch display panel of claim 1, further comprising:
a first metal layer formed on the first substrate, wherein the
first metal layer comprises the gates; a first insulation layer
formed on the first metal layer; the semiconductor layer formed on
the first insulation layer; a second metal layer formed on the
semiconductor layer, wherein the second metal layer comprises the
sources and the drains; a first transparent conductive layer formed
on the first insulation layer, wherein the first transparent
conductive layer comprises the pixel electrodes; a second
insulation layer formed on the second metal layer and on the first
transparent conductive layer; a third metal layer formed on the
second insulation layer and comprising the touch sensing lines in
the display area; a third insulation layer formed on the third
metal layer and having a contact hole to expose one of the touch
sensing lines; and a second transparent conductive layer formed on
the third insulation layer, wherein the second transparent
conductive layer comprises the sub-common electrodes, wherein in
the display area, one of the sub-common electrodes is electrically
connected to the one of the touch sensing lines through the contact
hole.
14. The in-cell touch display panel of claim 1, further comprising:
a first metal layer formed on the first substrate, wherein the
first metal layer comprises the gates; a first insulation layer
formed on the first metal layer; the semiconductor layer formed on
the first insulation layer; a second metal layer formed on the
semiconductor layer, wherein the second metal layer comprises the
sources and the drains; a first transparent conductive layer formed
on the first insulation layer, wherein the first transparent
conductive layer comprises the sub-common electrodes; a second
insulation layer formed on the second metal layer and the first
transparent conductive layer, and having a contact hole; a third
metal layer formed on the second insulation layer, wherein the
touch sensing lines are formed in the third metal layer in the
display area, and one of the sub-common electrodes is electrically
connected to one of the touch sensing lines through the contact
hole; a third insulation layer formed on the second insulation
layer and the third metal layer; and a second transparent
conductive layer formed on the third insulation layer, wherein the
second transparent conductive layer comprises the pixel
electrodes.
15. The in-cell touch display panel of claim 1, further comprising:
a first metal layer formed on the first substrate, wherein the
first metal layer comprises the gates; a first insulation layer
formed on the first metal layer; the semiconductor layer formed on
the first insulation layer; a second metal layer formed on the
semiconductor layer, wherein the second metal layer comprises the
sources and the drains; a second insulation layer formed on the
second metal layer, wherein the second insulation layer has a first
contact hole; a first transparent conductive layer formed on the
second insulation layer, wherein the first transparent conductive
layer comprises the sub-common electrodes; a third insulation layer
formed on the first transparent conductive layer, and having a
second contact hole and a third contact hole, wherein the second
contact hole is corresponding to the first contact hole; a third
metal layer formed on the third insulation layer, wherein the touch
sensing lines are formed in the third metal layer in the display
area, and one of the touch sensing lines is electrically connected
to one of the sub-common electrodes through the third contact hole;
and a second transparent conductive layer formed on the third
insulation layer, wherein the second transparent conductive layer
comprises the pixel electrodes, and one of the pixel electrodes is
electrically connected to one of the drains through the second
contact hole and the first contact hole, wherein the second
transparent conductive layer covers the touch sensing lines, and
projections of one of the touch sensing lines and one of the data
lines onto the first substrate at least partially overlap with each
other.
16. The in-cell touch display panel of claim 1, wherein each of the
pixel structures in the display area further comprises: a first
metal layer formed on the first substrate, wherein the first metal
layer comprises the gates; a first insulation layer formed on the
first metal layer; the semiconductor layer formed on the first
insulation layer, wherein the semiconductor layer is a metal oxide
comprising Indium, gallium and zinc; a second insulation layer
formed on the semiconductor layer, wherein the second insulation
layer has a first contact hole and a second contact hole; a first
transparent conductive layer formed on the second insulation layer,
wherein the first transparent conductive layer comprises one of the
pixel electrodes; a second metal layer formed on the second
insulation layer to form one of the sources, one of the drains and
one of the touch sensing lines, wherein the one of sources and the
one of the drains are electrically connected to the semiconductor
layer through the first contact hole and the second contact hole
respectively, wherein the one of the drains is electrically to the
one of pixel electrodes; a third insulation layer formed on the
second metal layer and having a third contact hole; and a second
transparent conductive layer formed on the third insulation layer,
wherein the second transparent conductive layer comprises one of
the touch electrodes, and the one of the touch sensing lines is
electrically connected to the one of touch electrodes through the
third contact hole.
17. The in-cell touch display panel of claim 1, wherein each of the
pixel structures in the display area further comprises: the
semiconductor layer formed on the first substrate, wherein the
semiconductor layer comprises one of the sources, a first lightly
doped region, a channel region of one of the TFTs, a second lightly
doped region and one of the drains, wherein the channel region is
formed between the first lightly doped region and the second
lightly doped region; a first insulation layer formed on the
semiconductor layer, wherein the first insulation layer has a first
contact hole to expose the one of the sources, and a second contact
hole to expose the one of the drains; a first metal layer formed on
the first insulation layer, wherein the first metal layer comprises
one of the gates; a second insulation layer formed on the first
metal layer, wherein the second insulation layer has a third
contact hole corresponding to the first contact hole, and a fourth
contact hole corresponding to the second contact hole; a first
transparent conductive layer formed on the second insulation layer,
wherein the first transparent conductive layer comprises one of the
pixel electrodes; a second metal layer formed on the second
insulation layer, wherein the data lines and the touch sensing
lines are formed in the second metal layer in the display area, one
of the data lines is electrically connected to the one of the
sources through the third contact hole and the first contact hole,
wherein the second metal layer comprises a filling structure
electrically connected to the one of pixel electrodes, and is
electrically connected to the one of the drains through the fourth
contact hole and the second contact hole; a third insulation layer
formed on the second metal layer, wherein the third insulation
layer has a fifth contact hole to expose one of the touch sensing
lines; and a second transparent conductive layer formed on the
third insulation layer, wherein the second transparent conductive
layer comprises the sub-common electrodes, and the second
transparent conductive layer is electrically connected to the one
of the touch sensing lines through the fifth contact hole.
18. The in-cell touch display panel of claim 1, further comprising:
a first metal layer formed on the first substrate, wherein the
first metal layer comprises the gates; a first insulation layer
formed on the first metal layer; the semiconductor layer formed on
the first insulation layer; a first transparent conductive layer
formed on the first insulation layer, wherein the first transparent
conductive layer comprises the pixel electrodes; a second metal
layer formed on the semiconductor layer, wherein the second metal
layer comprises the sources and the drains, the touch sensing lines
and the data lines are formed in the second metal layer in the
display area, and one the touch sensing lines is disposed between
two of the data lines; a second insulation layer formed on the
second metal layer and on the first transparent conductive layer,
wherein the second insulation layer comprises a first contact hole
to expose one of the touch sensing lines; a third insulation layer
formed on the second insulation layer, and having a second contact
hole corresponding to the first contact hole; and a second
transparent conductive layer formed on the third insulation layer
and is electrically connected to the one of the touch sensing lines
through the second contact hole and the first contact hole, wherein
the second transparent conductive layer comprises the sub-common
electrodes.
19. The in-cell touch display panel of claim 1, wherein the
non-display area comprises a signal line transfer area and a
fan-out area, the signal line transfer area is located between the
display area and the fan-out area, the touch pads and the display
pads are disposed in the fan-out area, one of the touch sensing
lines comprises a first part and a second part, the first part is
formed in a first metal layer, the second part is formed in a third
metal layer, and the in-cell touch display panel further comprises:
a connection structure disposed in the signal line transfer area
and coupled to the first part and the second part, wherein the
connection structure comprises: the first part; the second part; a
plurality of insulation layers having a plurality of openings to
expose the first part and the second part; and a transparent
conductive layer electrically connected to the first part and the
second part through the openings.
20. The in-cell touch display panel of claim 1, wherein the
non-display area further comprises a signal line transfer area and
a fan-out area, the signal line transfer area is located between
the display area and the fan-out area, the touch pads and the
display pads are disposed in the fan-out area, one of the touch
sensing lines comprises a first part and a second part, the first
part is formed in a first metal layer, the second part is formed in
a second metal layer, and the in-cell touch display panel further
comprises: a connection structure disposed in the signal line
transfer area and coupled to the first part and the second part,
wherein the connection structure comprises: the first part; the
second part; a plurality of insulation layers, having a plurality
of openings to expose the first part and the second part; and a
transparent conductive layer electrically connected to the first
part and the second part through the openings.
Description
RELATED APPLICATIONS
[0001] This application claims priority to China Application Serial
Number 201611243632.6 filed Dec. 29, 2016, which is herein
incorporated by reference.
BACKGROUND
Field of Invention
[0002] The present invention relates to a touch display panel. More
particularly, the present invention relates to an in-cell touch
display panel with a Touch with Display Driver Integrated (TDDI)
single chip.
Description of Related Art
[0003] The TDDI single chip is configured to connect all of data
lines and touch sensing lines which are connected to touch
electrodes, thereby enabling the single chip to control both
functions of touch and display. However, the data lines and the
touch sensing lines would concentrate toward the chip area in a
non-display area, and thus are overlapped with each other. The
signals transmitted on the data lines and the touch sensing lines
may be interfered by each other, and therefore the functions of
display and touch are both affected. It is an issue in the art that
how to address the problems of overlapped trace routes and the
interference between the data lines and the touch sensing lines in
the non-display area.
SUMMARY
[0004] A perspective of the invention is to provide an in-cell
touch display panel, in which traces of conductive lines in the
non-display area would not overlap with each other, and thus to
reduce the difficulty for disposing touch sensing lines and data
lines in the non-display area.
[0005] Embodiments of the invention provide an in-cell touch
display panel having a display area and a non-display area, and the
in-cell touch display panel includes following units. Multiple data
lines are disposed on a first substrate along a first direction.
Multiple gate lines are disposed along a second direction. An angle
is formed between the first direction and the second direction.
Multiple touch sensing lines are disposed on the first substrate
and are electrically insulated from the data lines and the gate
lines. Multiple pixel regions are formed in the display area, and
each of the pixel regions is surrounded by one of the gate lines
and one of the data lines intersecting with each other. Each of the
pixel regions includes a pixel structure, and each of the pixel
structures includes a pixel electrode. A common electrode is formed
in the display area and includes multiple touch electrodes. Each of
the touch electrodes corresponds to more than one of the pixel
electrodes, and each of the pixel electrodes corresponds to a
sub-common electrode which is a part of the touch electrode.
Multiple thin film transistors (TFTs) are formed in the pixel
structure, in which each of the thin film transistors includes a
gate, a source, a drain and a semiconductor layer. A liquid crystal
layer is formed between the first substrate and the second
substrate. Multiple display pads and multiple touch sensing pads
are disposed in the non-display area. Each of the touch electrodes
is electrically connected to at least one of the touch sensing
lines, and each of the touch sensing lines is electrically
connected to one of the touch pads. Each of the sources is
electrically connected to one of the data lines, and each of the
data lines is electrically connected to one of the display pads. At
least one of the display pads is disposed between two of the touch
pads, and at least one of the touch pads is disposed between two of
the display pads.
[0006] In some embodiments, the data lines are parallel to the
touch sensing lines in the display area, and the data lines are not
overlapped with the touch sensing lines in the non-display
area.
[0007] In some embodiments, the data lines are partially overlapped
with the touch sensing lines along a normal vector of the first
substrate in the display area. The data lines and the touch sensing
lines are formed in different metal layers in the display area.
[0008] In some embodiments, the data lines are parallel to the
touch sensing lines in the display area. The data lines and the
touch sensing lines are formed in the same metal layer in the
display area.
[0009] In some embodiments, at least two of the touch sensing lines
are electrically connected with each other and electrically
connected to one of the touch pads through a conductive line.
[0010] In some embodiments, the number of the touch pads is less
than the number of the display pads, the display pads and the touch
pads are arranged as multiple rows, and one of the rows includes at
least part of the touch pads.
[0011] In some embodiments, the display pads are disposed between
the touch pads and the display area.
[0012] In some embodiments, the touch pads are disposed between the
display pads and the display area.
[0013] In some embodiments, the number of the touch pads is less
than the number of the display pads, and the display pads and the
touch pads are arranged as multiple rows. A first row of these rows
only includes a portion of the display pads, and a second row of
these rows includes a portion of the display pads and a portion of
the touch pads.
[0014] In some embodiments, the first row is disposed between the
display area and the second row.
[0015] In some embodiments, the second row is disposed between the
display area and the first row.
[0016] In some embodiments, the in-cell touch display panel further
includes a driving circuit disposed in the non-display area and
electrically connected to the display pads and the touch pads. In a
display period, the driving circuit transmits pixel data to the
pixel electrodes through the data lines and the TFTs. In a touch
period, the driving circuit generates a touch sensing signal
according to a voltage variation from one of the touch
electrodes.
[0017] In some embodiments, the in-cell touch display panel further
includes: a first metal layer formed on the first substrate, in
which the first metal layer includes the gates; a first insulation
layer formed on the first metal layer; the semiconductor layer
formed on the first insulation layer; a second metal layer formed
on the semiconductor layer, in which the second metal layer
includes the sources and the drains; a first transparent conductive
layer formed on the first insulation layer, in which the first
transparent conductive layer includes the pixel electrodes; a
second insulation layer formed on the second metal layer and on the
first transparent conductive layer; a third metal layer formed on
the second insulation layer, in which the touch sensing lines are
formed in the third metal layer in the display area; a third
insulation layer formed on the third metal layer and having a
contact hole to expose one of the touch sensing lines; and a second
transparent conductive layer formed on the third insulation layer,
in which the second transparent conductive layer includes the
sub-common electrodes. In the display area, one of the sub-common
electrodes is electrically connected to one of the touch sensing
lines through the contact hole.
[0018] In some embodiments, the in-cell touch display panel further
includes: a first metal layer formed on the first substrate, in
which the first metal layer includes the gates; a first insulation
layer formed on the first metal layer; the semiconductor layer
formed on the first insulation layer; a second metal layer formed
on the semiconductor layer, in which the second metal layer
includes the sources and the drains; a first transparent conductive
layer formed on the first insulation layer, in which the first
transparent conductive layer includes the sub-common electrodes; a
second insulation layer formed on the second metal layer and the
first transparent conductive layer, and a contact hole is formed in
the first transparent conductive layer; a third metal layer formed
on the second insulation layer, in which the touch sensing lines
are formed in the third metal layer in the display area, and one of
the sub-common electrodes is electrically connected to one of the
touch sensing lines through the contact hole; a third insulation
layer formed on the second insulation layer and the third metal
layer; and a second transparent conductive layer formed on the
third insulation layer, in which the second transparent conductive
layer includes the pixel electrodes.
[0019] In some embodiments, the in-cell touch display panel further
includes: a first metal layer formed on the first substrate, in
which the first metal layer includes the gates; a first insulation
layer formed on the first metal layer; the semiconductor layer
formed on the first insulation layer; a second metal layer formed
on the semiconductor layer, in which the second metal layer
includes the sources and the drains; a second insulation layer
formed on the second metal layer, in which the second insulation
layer has a first contact hole; a first transparent conductive
layer formed on the second insulation layer, in which the first
transparent conductive layer includes the sub-common electrodes; a
third insulation layer formed on the first transparent conductive
layer, and having a second contact hole and a third contact hole,
in which the second contact hole is corresponding to the first
contact hole; a third metal layer formed on the third insulation
layer, in which the touch sensing lines are formed in the third
metal layer in the display area, and one of the touch sensing lines
is electrically connected to one of the sub-common electrodes
through the third contact hole; and a second transparent conductive
layer formed on the third insulation layer, in which the second
transparent conductive layer includes the pixel electrodes, and one
of the pixel electrodes is electrically connected to one of the
drains through the second contact hole and the first contact hole.
The second transparent conductive layer covers the touch sensing
lines, and projections of one of the touch sensing lines and one of
the data lines onto the first substrate at least partially overlap
with each other.
[0020] In some embodiments, each of the pixel structures in the
display area further includes: a first metal layer formed on the
first substrate, in which the first metal layer includes the gates;
a first insulation layer formed on the first metal layer; the
semiconductor layer formed on the first insulation layer, in which
the semiconductor layer is a metal oxide including Indium, gallium
and zinc; a second insulation layer formed on the semiconductor
layer, in which the second insulation layer has a first contact
hole and a second contact hole; a first transparent conductive
layer formed on the second insulation layer, in which the first
transparent conductive layer includes one of the pixel electrodes;
a second metal layer formed on the second insulation layer to form
one of the sources, one of the drains and one of the touch sensing
lines, in which the one of sources and the one of the drains are
electrically connected to the semiconductor layer through the first
contact hole and the second contact hole respectively, in which the
one of the drains is electrically to the one of pixel electrodes; a
third insulation layer formed on the second metal layer and having
a third contact hole; and a second transparent conductive layer
formed on the third insulation layer, in which the second
transparent conductive layer includes one of the touch electrodes,
and the one of the touch sensing lines is electrically connected to
the one of touch electrodes through the third contact hole.
[0021] In some embodiments, each of the pixel structures in the
display area further includes: the semiconductor layer formed on
the first substrate, in which the semiconductor layer includes one
of the sources, a first lightly doped region, a channel region of
one of the TFTs, a second lightly doped region and one of the
drains, in which the channel region is formed between the first
lightly doped region and the second lightly doped region; a first
insulation layer formed on the semiconductor layer, in which the
first insulation layer has a first contact hole to expose the one
of the sources, and a second contact hole to expose the one of the
drains; a first metal layer formed on the first insulation layer,
in which the first metal layer includes one of the gates; a second
insulation layer formed on the first metal layer, in which the
second insulation layer has a third contact hole corresponding to
the first contact hole, and a fourth contact hole corresponding to
the second contact hole; a first transparent conductive layer
formed on the second insulation layer, in which the first
transparent conductive layer includes one of the pixel electrodes;
a second metal layer formed on the second insulation layer, in
which the data lines and the touch sensing lines are formed in the
second metal layer in the display area, one of the data lines is
electrically connected to the one of the sources through the third
contact hole and the first contact hole, in which the second metal
layer includes a filling structure electrically connected to the
one of pixel electrodes, and is electrically connected to the one
of the drains through the fourth contact hole and the second
contact hole; a third insulation layer formed on the second metal
layer, in which the third insulation layer has a fifth contact hole
to expose one of the touch sensing lines; and a second transparent
conductive layer formed on the third insulation layer, in which the
second transparent conductive layer includes the sub-common
electrodes, and the second transparent conductive layer is
electrically connected to the one of the touch sensing lines
through the fifth contact hole.
[0022] In some embodiments, the in-cell touch display panel further
includes: a first metal layer formed on the first substrate, in
which the first metal layer includes the gates; a first insulation
layer formed on the first metal layer; the semiconductor layer
formed on the first insulation layer; a first transparent
conductive layer formed on the first insulation layer, in which the
first transparent conductive layer includes the pixel electrodes; a
second metal layer formed on the semiconductor layer, in which the
second metal layer includes the sources and the drains, the touch
sensing lines and the data lines are formed in the second metal
layer in the display area, and one the touch sensing lines is
disposed between two of the data lines; a second insulation layer
formed on the second metal layer and on the first transparent
conductive layer, in which the second insulation layer includes a
first contact hole to expose one of the touch sensing lines; a
third insulation layer formed on the second insulation layer, and
having a second contact hole corresponding to the first contact
hole; and a second transparent conductive layer formed on the third
insulation layer and is electrically connected to the one of the
touch sensing lines through the second contact hole and the first
contact hole, in which the second transparent conductive layer
includes the sub-common electrodes.
[0023] In some embodiments, the non-display area includes a signal
line transfer area and a fan-out area. The signal line transfer
area is located between the display area and the fan-out area. The
touch pads and the display pads are disposed in the fan-out area.
One of the touch sensing lines includes a first part and a second
part, the first part is formed in a first metal layer, and the
second part is formed in a third metal layer. The in-cell touch
display panel further includes a connection structure disposed in
the signal line transfer area and coupled to the first part and the
second part. The connection structure includes: the first part; the
second part; multiple insulation layers, having multiple openings
to expose the first part and the second part; and a transparent
conductive layer, electrically connected to the first part and the
second part through the openings.
[0024] In some embodiments, the first part is formed in a first
metal layer, and the second part is formed in a second metal layer.
The in-cell touch display panel further includes a connection
structure disposed in the signal line transfer area and coupled to
the first part and the second part. The connection structure
includes: the first part; the second part; multiple insulation
layers, having multiple openings to expose the first part and the
second part; and a transparent conductive layer electrically
connected to the first part and the second part through the
openings.
[0025] Compared with prior art, the invention has advantages of:
the touch sensing lines and the data lines in the non-display area
would not overlap with each other, and thus the difficulty for
disposing the touch sensing lines and the data lines in the
non-display area is decreased.
BRIEF DESCRIPTION OF THE DRAWINGS
[0026] The invention can be more fully understood by reading the
following detailed description of the embodiment, with reference
made to the accompanying drawings as follows.
[0027] FIG. 1 is a schematic diagram illustrating connection of
data lines and touch sensing lines in the in-cell touch display
panel in accordance of an embodiment.
[0028] FIG. 2 is a schematic diagram illustrating connection
between the touch sensing lines and a driving circuit in accordance
with an embodiment.
[0029] FIG. 3A to FIG. 3G is a schematic diagram illustrating
disposition of display pads and touch pads in accordance with some
embodiments.
[0030] FIG. 4A is a top view of pixel structure in accordance with
an embodiment.
[0031] FIG. 4B is a top view of pixel structure in accordance with
another embodiment.
[0032] FIG. 5A is a cross-sectional view of pixel structure along a
cross-sectional line AA' of FIG. 4A.
[0033] FIG. 5B_1 is a top view of pixel structure in accordance
with another embodiment.
[0034] FIG. 5B_2 is a top view of multiple pixel structures in
accordance with another embodiment.
[0035] FIG. 5C is a circuit diagram of common electrodes of FIG.
5B_1.
[0036] FIG. 5D is a cross-sectional view of pixel structure along a
cross-sectional line EE' of FIG. 5B_1.
[0037] FIG. 5E is a cross-sectional view of pixel structure along a
cross-sectional line FF' of FIG. 5B_1.
[0038] FIG. 5F is a cross-sectional view of pixel structure along
across-sectional line GG' of FIG. 5B_1.
[0039] FIG. 5G is a top view of pixel structure in accordance with
another embodiment.
[0040] FIG. 5H is a cross-sectional view of pixel structure along a
cross-sectional line II' of FIG. 5G.
[0041] FIG. 5I is a cross-sectional view of pixel structure along a
cross-sectional line JJ' of FIG. 5G.
[0042] FIG. 5J is a cross-sectional view of pixel structure along a
cross-sectional line HH' of FIG. 4B.
[0043] FIG. 5K is a cross-sectional view of pixel structure in
accordance with an embodiment.
[0044] FIG. 5L is a cross-sectional view of pixel structure in
accordance with an embodiment.
[0045] FIG. 6 is a top view of pixel structure in accordance with
another embodiment.
[0046] FIG. 7A is a cross-sectional view of pixel structure along a
cross-sectional line CC' of FIG. 6.
[0047] FIG. 7B is a cross-sectional view of pixel structure in
accordance with an embodiment.
[0048] FIG. 8A to FIG. 8C are cross-sectional view of connection
structure 440 along a cross-sectional line BB' of FIG. 4A.
[0049] FIG. 8D to FIG. 8I are cross-sectional views of connection
structure 580 in accordance with an embodiment.
[0050] FIG. 9A to FIG. 9C are cross-sectional views of connection
structure 610 along a cross-sectional line DD' of FIG. 6.
[0051] FIG. 9D to FIG. 9G are cross-sectional views of connection
structure in accordance with an embodiment.
[0052] FIG. 10A to FIG. 10G is top views of intermediary stages for
manufacturing pixel stricture in accordance with an embodiment.
DETAILED DESCRIPTION
[0053] The using of "first", "second", "third", etc. in the
specification should be understood for identifying units or data
described by the same terminology, but are not referred to
particular order or sequence. In addition, the term "couple" used
in the specification should be understood for electrically
connecting two units directly or indirectly. In other words, when
"a first object is coupled to a second object" is written in the
specification, it means another object may be disposed between the
first object and the second object.
[0054] FIG. 1 is a schematic diagram illustrating connections of
data lines and touch sensing lines in an in-cell touch display
panel in accordance with an embodiment. Referring to FIG. 1, in an
in-cell touch display panel 100, electrodes for detecting touch are
disposed in pixel structures on a thin film transistor (TFT)
substrate.
[0055] The in-cell touch display panel 100 has a display area 101
and a non-display area 102. The non-display area 102 includes a
signal line transfer area 103 and a fan-out area 104. The display
area 101 is described first. The display area 101 includes: pixel
structures P11-P14, P21-P24, P31-P34 and P41-P44 (the regions where
gate lines and data lines intersect and surround); gate lines G1-G4
extending along an X direction (also referred to a first
direction); data lines D1-D4 extending along a Y direction (also
referred to a second direction), and touch sensing lines S1-S4
extending along the Y direction. A common electrode is formed in
the display area and patterned to form multiple touch electrodes.
Each touch electrode corresponds to more than one pixel structure,
and each pixel structure includes a pixel electrode corresponding
to a sub-common electrode. Each pixel structure includes a thin
film transistor (TFT). Each of the data lines D1-D4 is electrically
connected to the source of the TFT in the corresponding pixel
structure, and each of the gate lines G1-G4 is electrically
connected to the gate of the TFT in the corresponding pixel
structure. For example, the pixel structure P11 includes a TFT T1
which has a gate T1G and a source T1S. The gate line G1 is
electrically connected to the gate T1G, and the data line D1 is
electrically connected to the source T1S. In addition, each touch
electrode is electrically connected to one touch sensing line
through a contact hole ch. For example, the pixel structures
P11-P14 share a touch electrode C11 which is electrically connected
to the touch sensing line S1; the pixel structures P21-P24 share a
touch electrode C12 which is electrically connected to the touch
sensing line S3; the pixel structures P31-P34 share a touch
electrode C21 which is electrically connected to the touch sensing
line S2; and the pixel structures P44-P44 share a touch electrode
C22 which is electrically connected to the touch sensing line
S4.
[0056] A period of a frame is at least divided into one or more
display periods and one or more touch periods. During the display
period, a common voltage is applied to the touch electrodes C11,
C12, C21, and C22, and the voltage on the gate lines G1-G4 are
configured to turn on the TFTs in the corresponding pixel
structures sequentially, and the driving circuit 110 transmits
pixel data to the pixel electrodes in the corresponding pixel
structures through the data lines D1-D4 in order to set grey levels
of pixels. During the touch period, the touch electrodes C11, C12,
C21, and C22 are taken for detecting touch operations performed on
the in-cell touch display panel 100, and the driving circuit 110
generates a touch sensing signal according to the voltage variation
on the touch electrodes C11, C12, C21, and C22. In other words, the
spatial resolution of the touch function depends on the number of
the touch electrodes, the spatial resolution of the display
function depends on the number of the pixels, and thus the
resolution of the touch function is less than the resolution of the
display function.
[0057] The signal line transfer area 103 is located between the
display area 101 and the fan-out area 104. In the signal line
transfer area 103, the data lines D1-D4 and the touch sensing lines
S1-S4 may be transferred to other metal layers. For example, the
touch sensing lines S1-S4 are in a third or second metal in the
display area 101, but are transferred to a first metal layer in the
fan-out area 104. Multiple connection structures are disposed in
the signal line transfer area 103 for transferring the touch
sensing lines S1-S4 from the third or second metal layer to the
first metal layer. The embodiment of the connection structure would
be described in detail below. In addition, a protection circuit and
a transparent or opaque conductive layer may be disposed in the
signal line transfer area 103 to prevent the in-cell touch display
panel 100 from be damaged by static discharge. In some embodiments,
the width of the signal line transfer area 103 is essentially equal
to width of half pixel to one pixel, which is not limited in the
invention.
[0058] A driving circuit 110 is disposed in the fan-out area 104 on
the in-cell touch display panel 100. The driving circuit 110 may be
disposed on a flexible circuit board such as tape carrier package
(TCP) or chip on film (COF), or the driving circuit 110 may be
disposed on the TFT substrate. The driving circuit 110 is
electrically connected to display pads 121-124 and touch pads
131-134 which are disposed on the in-cell touch display panel 100.
The display pads 121-124 are electrically connected to the data
lines D1-D4 respectively, and the touch pads 131-134 are
electrically connected to the touch sensing lines S1-S4
respectively. In particular, along the X direction, one of the
display pads is disposed between two of the touch pads, and one of
the touch pads is disposed between two of the display pads. For
example, the display pad 122 is disposed between the touch pad 131
and the touch pad 132, and the touch pad 131 is disposed between
the display pad 121 and the display pad 122. In the embodiment of
FIG. 1, the display pads 121-124 and the touch pads 131-134 are
disposed in an interleaved way. In prior art (not shown), the
display pads and the touch pads are arranged in a same row, and the
display pads are continuously disposed, and then the touch pads are
continuously disposed next to the display pad. Thus, the data lines
D1-D4 would be overlapped with the touch sensing lines S1-S4 in the
non-display area 102. However, as shown in FIG. 1, the data lines
D1-D4 are parallel with the touch sensing lines S1-S4 in the
display area 101, and they do not overlap with each other in the
non-display area 102 because the display pads 121-124 and the touch
pads 131-134 are disposed in the interleaved way.
[0059] Every four pixel structures share one touch electrode In
FIG. 1, but more or less pixel structures may share one common
electrode in other embodiments. In addition, the number of the data
lines D1-D4 is equal to the number of the touch sensing lines S1-S4
in FIG. 1, but in practice, every pixel structure (also referred to
sub-pixel) generally renders a single color, and a pixel is
composed of three sub-pixels which are generally arranged along the
X direction. Therefore, the resolution of the pixel structures
along the X direction is greater than the resolution of that along
the Y direction. In some embodiments, at least two of the touch
sensing lines are connected to each other and then is electrically
connected to one touch pad though a conductive line. For example,
referring to FIG. 2, FIG. 2 is a schematic diagram illustrating
connection between the touch sensing lines and the driving circuit
in accordance with an embodiment. For simplification, conductive
lines such as the data lines and the gate lines are not shown in
FIG. 2. In the embodiment of FIG. 2, each of the touch electrodes
C11, C21, and C31 includes 27 pixel structures arranged as 3 rows
and 9 columns. At least one of the touch sensing lines S1-S3 is
electrically connected to the touch electrode C11 through a contact
hole ch, and the touch sensing lines S1-S3 are connected to each
other in the signal line transfer area 103, and then is
electrically connected to one touch pad through a conductive line
201. At least one of the touch sensing lines S4-S6 is electrically
connected to the touch electrode C21 through the contact hole ch,
and the touch sensing lines S4-S6 are connected to each other in
the signal line transfer area 103, and then they are electrically
connected to one touch pad through a conductive line 202. At least
one of the touch sensing lines S7-S9 is electrically connected to
the touch electrode C31 through the contact hole ch, and the touch
sensing lines S7-S9 are connected to each other in the signal line
transfer area 103, and then they are electrically connected to one
touch pad through a conductive line 203. In the embodiment of FIG.
2, two of the touch sensing lines S1-S3 are electrically connected
to the touch electrode C11 through two contact holes ch, one of the
touch sensing lines S4-S6 is electrically connected to the touch
electrode C21 through one contact hole ch, and three of the touch
sensing lines S7-S9 are electrically connected to the touch
electrode C31 through three contact holes ch. The number of touch
sensing lines that each touch electrode is electrically connected
to is not limited in the invention. For example, if there are five
touch sensing lines passing through one touch electrode, then the
touch electrode may be electrically connected to any number (ex.
1-5) of the five touch sensing lines.
[0060] In another embodiment, three touch sensing lines
corresponding to the same touch electrode may be electrically
connected to pixel strictures in different rows. For example, the
touch sensing line S1 may be electrically connected to the pixel
structure at the first row and the first column corresponding to
the touch electrode C11; the touch sensing line S2 may be
electrically connected to the pixel structure at the second row and
the second column corresponding to the touch electrode C11; and the
touch sensing line S3 may be electrically connected to the pixel
structure at the third row and third column corresponding to the
touch electrode C11. The touch sensing line S4 may be electrically
connected to the pixel structure at the first row and the fourth
column corresponding to the touch electrode C21; the touch sensing
line S5 may be electrically connected to the pixel structure at the
second row and the fifth column corresponding to the touch
electrode C21; and the touch sensing line S6 may be electrically
connected to the pixel structure at the third row and the sixth
column corresponding to the touch electrode C21. The touch sensing
line S7 may be electrically connected to the pixel structure at the
first row and the seventh column corresponding to the touch
electrode C31; the touch sensing line S8 may be electrically
connected to the pixel structure at the second row and the eighth
column corresponding to the touch electrode C31; and the touch
sensing line S9 may be electrically connected to the pixel
structure at the third row and the ninth column corresponding to
the touch electrode C31.
[0061] In addition, each pixel structure has at least a data line,
and each data line is connected to one display pad. In other words,
the number of the display pads is more than the number of touch
pads. In the embodiment of FIG. 2, one touch pad is disposed
between every three display pads, and thus the touch sensing lines
and the data lines are not overlapped with each other in the
non-display area 102.
[0062] FIG. 3A to FIG. 3G is a schematic diagram illustrating
disposition of display pads and touch pads in accordance with some
embodiments. For simplification, the data lines and the touch
sensing lines respectively connected to display pads DP and touch
pads TP are not shown in FIG. 3A to FIG. 3G.
[0063] Referring to FIG. 3A, in some embodiments, the display pads
and the touch pads are arranged, along the Y direction, as a first
row 301, a second row 302, and a third row 303. The first row 301
only includes the touch pads TP, and the second row 302 and the
third row 303 only include the display pads DP. In this embodiment,
all touch pads are disposed in the first row 301, but all touch
pads may be arranged as several rows in other embodiments. In
addition, the touch pads TP are disposed on the top in FIG. 3A,
that is, the touch pads TP are disposed between the display area
and the display pads DP. FIG. 3B is similar to FIG. 3A, in which
the display pads and the touch pads are arranged, along the Y
direction, as a first row 311, a second row 312 and a third row
313. The second row 312 and the third row 313 only include the
display pads DP, and the first row 311 only includes the touch pads
TP. However, the touch pads TP are disposed on the bottom in FIG.
3B, that is, the display pads DP are disposed between the display
area and the touch pads.
[0064] In FIG. 3C, the display pads and the touch pads are
arranged, along the Y direction, as a first row 321 and a second
row 322. The first row 321 only includes a portion of the display
pads DP, and the second row 322 includes a portion of the display
pad DP and the touch pads TP. The touch pads TP are inserted into
the display pads DP of the second row 322 in FIG. 3C. The first row
321 is disposed on the top, that is, the first row 321 is disposed
between the display area and the second row 322. FIG. 3D is similar
to FIG. 3, but the difference between FIG. 3C and FIG. 3D is that
the second row 332 having the touch pads TP and the display pads DP
is disposed on the top, that is, the second row 332 is disposed
between the display area and the first row 331. The touch pads TP
are inserted into the display pads DP of the second row 332 as
shown in FIG. 3D.
[0065] In FIG. 3E, the display pads and the touch pads are
arranged, along Y direction, as a first row 341, a second row 342,
a third row 343 and a fourth row 344. The first row 341 only
includes touch pads TP; the second row 342, the third row 343 and
the fourth row 344 only include display pads DP. Moreover, the
touch pads TP are overlapped with the display pads DP along Y
direction.
[0066] In FIG. 3F, the touch pads TP are evenly distributed in the
first row 351, the second row 352 and the third row 353. In the
same row, three display pads DP are disposed between two adjacent
touch pads TP. In addition, the touch pads TP are overlapped with
each other along Y direction.
[0067] In FIG. 3G, a first row 361 only includes touch pads TP, a
second row 362 and a third row 363 only include display pads DP,
and a fourth row 364 only includes touch pads TP. Along Y
direction, the touch pads TP in the first row 361 are overlapped
with the touch pads TP in the fourth row 364, and the display pads
DP in the second row 362 are overlapped with the display pads DP in
the third row 363.
[0068] In the embodiments of FIG. 3A to FIG. 3G, the width of each
touch pad TP along the X direction is equal to that of each display
pad DP. However, in other embodiments, the width of each touch pad
TP along the X direction may be wider than that of the display pad
DP, which is not limited in the invention. Note that the
description of "one display pad is disposed between two touch pads
along X direction" may be interpreted as "the projection of one
display pad onto X axis is disposed between the projections of two
touch pads onto X axis", and thus it encompass the embodiments of
FIG. 3A to FIG. 3G. For example, in FIG. 3E, the display pads 347
is disposed between the touch pads 345 and the touch pads 346 along
X direction, and the touch pads 346 is disposed between the display
pads 347 and the display pads 348. From another aspect, a
projection of the display pads 347 onto X axis is located between
two projections of the touch pads 345 and the touch pads 346 onto X
axis. A projection of the touch pads 346 onto X axis is between two
projections of the display pads 347 and the display pads 348 along
X axis. The description may be applied to FIG. 3A to FIG. 3D, and
FIG. 3F to FIG. 3G, and the description will not be repeated.
[0069] FIG. 4A is a top view of pixel structure in accordance with
an embodiment. FIG. 5A is a cross-sectional view of pixel structure
along a cross-sectional line AA' of FIG. 4A. Referring to FIG. 4A,
a pixel structure 410 is taken as an example. The pixel structure
410 includes a TFT 420, a pixel electrode PE and a sub-common
electrode COM (not shown in FIG. 4A). The TFT 420 includes a gate
420G, a source 420S and a drain 420D. A gate line 430 formed in a
first metal layer M1 is connected to the gate 420G. A data line 431
formed in a second metal layer M2 is connected to the source 420S.
A touch sensing line 432 formed in a third metal layer M3 is
connected to the sub-common electrode COM. Referring to FIG. 4A and
FIG. 5A, the first metal layer M1 is formed on a substrate SUB, and
the first metal layer M1 includes the gate 420G. A first insulation
layer INS1 (also referred to gate insulation layer) is formed on
the first metal layer M1. A semiconductor layer 420C is formed on
the first insulation layer INS1 as a channel of the TFT 420. A
first transparent conductive layer 511 is formed on the first
insulation layer INS1, and includes the pixel electrode PE. The
second metal layer M2 is formed on the semiconductor layer 420C,
and includes the source 420S and the drain 420D which is connected
to the pixel electrode PE. A second insulation layer INS2 is formed
on the second metal layer M2 and the first transparent conductive
layer 511. A third metal layer M3 is formed on the second
insulation layer INS2, and the touch sensing line 432 is formed in
the third metal layer M3 in the display area 101. A third
insulation layer INS3 is formed on the third metal layer M3, and
includes a contact hole 520. A second transparent conductive layer
512 is formed on the third insulation layer INS3, and includes the
sub-common electrode COM which has several slits 512S. In the
display area 101, the touch sensing line 432 is electrically
connected to the sub-common electrode COM through the contact hole
520. Consequently, the common voltage is applied to the sub-common
electrode COM in the display period, and an electric field between
the sub-common electrode COM and the pixel electrode PE is
configured to control the orientation of the liquid crystal. In the
touch period, the sub-common electrode COM serves as a portion of
the touch electrode, and the voltage on which is transmitted to the
driving circuit through the touch sensing line 432 to generate the
touch sensing signal.
[0070] The sub-common electrode COM is disposed above the pixel
electrode PE in the embodiment of FIG. 5A. However, in other
embodiments, the sub-common electrode COM may be disposed below the
pixel electrode PE. For example, referring to FIG. 5B_1 and FIG.
5C, FIG. 5B_1 illustrates two pixel structure in an area 540 of
FIG. 5C. In order to distinguish two sub-common electrodes COM of
FIG. 5C, the sub-common electrodes in two adjacent pixel structures
of FIG. 5B_1 are labeled as a first sub-common electrode COM1 and a
second sub-common electrode COM2. When the sub-common electrodes
COM1, COM2 are disposed below the pixel electrode PE, the
sub-common electrodes COM1, COM2 and the second metal layer M2 are
formed directly on the same layer (the first insulation layer
INS1), that is, the sub-common electrodes COM1, COM2 and the second
metal layer M2 are in direct contact with the first insulation
layer INS1. Consequently, the sub-common electrode COM1 cannot
across the data lines 431 to electrically connect the sub-common
electrode COM2. Therefore, multiple metal connection structures
(e.g. metal connection structure 535) are disposed for electrically
connecting the sub-common electrodes in two adjacent pixel
structures. In addition, the metal connection structures are not
formed in the second metal layer. In the embodiment of FIG. 5B_1,
the metal connection structures are formed in the third metal layer
M3.
[0071] To be specific, referring to FIG. 5B_1, FIG. 5D, FIG. 5E and
FIG. 5F, FIG. 5D is a cross-sectional view of pixel structure along
a cross-sectional line EE' of FIG. 5B_1, FIG. 5E is a
cross-sectional view of pixel structure along a cross-sectional
line FF' of FIG. 5B_1, and FIG. 5F is a cross-sectional view of
pixel structure along across-sectional line GG' of FIG. 5B_1. The
units of FIG. 5D to FIG. 5F that are similar to that of FIG. 5A
will not be described again. In FIG. 5D to FIG. 5F, the second
metal layer M2 and the first transparent conductive layer 511 are
both disposed on the first insulation layer INS1 and are in direct
contact with the first insulation layer INS1. The first transparent
conductive layer 511 includes the sub-common electrodes COM1, COM2.
The second insulation layer INS2 is formed on the second metal
layer M2 and the first transparent conductive layer 511. The second
insulation layer INS2 includes a contact hole 530, a contact hole
531 and a contact hole 534. The contact hole 531 exposes the drain
420D. The contact holes 530, 534 in a single pixel structure are
disposed at two sides of the sub-common electrode to expose the
sub-common electrode of the pixel structure. For example, the
contact holes 530, 534 are disposed at two sides of the sub-common
electrode COM1, COM2. The third metal layer M3 is formed on the
second insulation layer INS2. In the display area 101, the touch
sensing lines 432 is formed in the third metal layer M3. The touch
sensing lines 432 is electrically connected to the sub-common
electrode COM1, COM2 through the contact hole 530. In addition, the
third metal layer M3 also includes the metal connection structure
535 which is electrically connected to the touch sensing lines 432
(also electrically connected to the sub-common electrode COM1), and
extend to the contact hole 534 in the adjacent pixel structure from
the contact hole 530, and is electrically connected to the
sub-common electrode COM2 through the contact hole 534. As a
result, two adjacent sub-common electrodes COM1, COM2 are
electrically connected to each other through the metal connection
structure 535. Moreover, the third insulation layer INS3 is formed
on the second insulation layer INS2 and the third metal layer M3,
and the third insulation layer INS3 has a contact hole 532
corresponding to the contact hole 531. The second transparent
conductive layer 512 is formed on the third insulation layer INS3,
and has the pixel electrode PE. In some embodiments, the pixel
electrode PE has several slits 533. In addition, the pixel
electrode PE is electrically connected to the drain 420D through
the contact holes 532, 531.
[0072] In the embodiment of FIG. 5B_1, the metal connection
structure 535 is formed in the third metal layer M3, but it may be
formed in the first metal layer M1 in other embodiments. For
example, referring to FIG. 5G, FIG. 5H and FIG. 5I. FIG. 5G is a
top view of pixel structures in accordance with another embodiment.
FIG. 5H is a cross-sectional view of pixel structure along a
cross-sectional line II' of FIG. 5G. FIG. 5I is a cross-sectional
view of pixel structure along a cross-sectional line JJ' of FIG.
5G. In the embodiment, the first metal layer M1 includes the gate
420G and a metal connection structure 563. The first insulation
layer INS1 includes contact holes 561, 562 to expose the metal
connection structure 563. The first transparent conductive layer
511 includes the sub-common electrodes COM1, COM2. The sub-common
electrode COM1 is electrically connected to the metal connection
structure 563 through the contact hole 561. The metal connection
structure 563 is electrically connected to the sub-common electrode
COM2 through the contact hole 562. As a result, the sub-common
electrodes COM1, COM2 are electrically connected to each other. The
second insulation layer INS2 is formed on the second metal layer M2
and the first transparent conductive layer 511, and has contact
holes 564 to expose the sub-common electrodes COM1, COM2. The third
metal layer M3 is formed on the second insulation layer INS2, and
the touch sensing lines 432 formed in the third metal layer M3 is
electrically connected to the sub-common electrodes COM1, COM2
through the contact holes 564.
[0073] On the other hand, referring to FIG. 5B_2 and FIG. 5C, the
sub-common electrodes COM1, COM2 are electrically connected to each
other through the metal connection structure 535 along X direction.
However, along Y direction, the sub-common electrode would not
across the second metal layer, which is in the same layer, and
therefore two sub-common electrodes are electrically connected to
each other through an extending part. In detail, the sub-common
electrode COM1 and a sub-common electrode COM3, which are adjacent
to each other along Y direction, are electrically connected to each
other through an extending part 591; the sub-common electrode COM2
and a sub-common electrode COM4, which are adjacent to each other
along Y direction, are electrically connected to each other through
an extending part 592. The extending parts 591, 592 would across
the gate lines 430, and the width of the extending part along X
direction is less than that of the sub-common electrodes COM1,
COM2, COM3, and COM4.
[0074] In the embodiments of FIG. 4A and FIG. 5A, the touch sensing
line 432 is formed in the third metal layer M3, but the touch
sensing line connected to the sub-common electrode COM may be
formed in the second metal layer M2 in another embodiment. For
example, referring to FIG. 4B, for clearly showing the relative
locations of the touch sensing line and the data line, two data
lines 431 and one touch sensing line 550 are shown in FIG. 5B. The
two data lines 431 are respectively belong to two adjacent pixel
structures. Both of the data lines 431 and the touch sensing line
550 are formed of the patterned second metal layer M2, and the
touch sensing line 550 is disposed between the two data lines 431.
In more detail, referring to FIG. 4B and FIG. 5J, and the
description of the components in FIG. 5J that are similar to FIG.
5A will not be repeated. The data lines 431 and the touch sensing
line 550 are formed on the first insulation layer INS1, and are
formed in the second metal layer M2 in the display area. The second
insulation layer INS2 is formed on the second metal layer M2 and
the first transparent conductive layer 511, and includes a contact
hole 551. The third insulation layer INS3 is formed on the second
metal layer INS2, and includes a contact hole 552 corresponding to
the contact hole 551. The transparent conductive layer 512 is
formed on the third insulation layer INS3, and is electrically
connected to the touch sensing line 550 through the contact hole
552 and the contact hole 551.
[0075] In the embodiments above, the channel region of TFT is
amorphous silicon (a-si), but the channel region of TFT may be
polysilicon or indium gallium zinc oxide (IGZO). For example,
referring to FIG. 5K, the first metal layer M1 is disposed on the
first substrate SUB. The first metal layer M1 includes the gate
420G of TFT. The first insulation layer INS1 is formed on the first
metal layer M1. The semiconductor layer 420C is formed on the first
insulation layer INS1, and the semiconductor layer 420C is metal
oxide including Indium, gallium and zinc. The chemical formula of
the semiconductor layer (IGZO) may be
In.sub.2-xM.sub.xO.sub.3(Zn.sub.1-yO).sub.F, where M denotes
boron(B), aluminum(Al), or gallium(Ga); 0.ltoreq.x.ltoreq.2;
0.ltoreq.y.ltoreq.1; and F=0-6. For example, when x=1, M=Ga, y=0,
and F=1, the formula of the semiconductor layer is InGaZnO4. The
second insulation layer INS2 is formed on the semiconductor layer
420C, and has a first contact hole 5K_1h and a second contact hole
5K_2h to expose the semiconductor layer 420C. The first transparent
conductive layer 511 is formed on the second insulation layer INS2,
and includes the pixel electrode PE. The second metal layer M2 is
also formed on the second insulation layer INS2, and includes the
data line 431, the source 420S, the drain 420D, and the touch
sensing line 550. The source 420S (data line 431) is electrically
connected to the semiconductor layer 420C through the first contact
hole 5K_1h. The drain 420D is electrically connected to the pixel
electrode PE, and is electrically connected to the semiconductor
layer 420C through the second contact hole 5K_2h. The third
insulation layer INS3 is formed on the second metal layer M2, and
includes a third contact hole 5K_3h to expose the touch sensing
line 550. The second transparent conductive layer 512 is formed on
the third insulation layer INS3 and includes the sub-common
electrode COM which is electrically connected to the touch sensing
line 550 through the third contact hole 5K_3h.
[0076] On the other hand, referring to FIG. 5L, the channel in FIG.
5L is Low Temperature Poly-silicon (LTPS). In detail, a
semiconductor layer 570 is formed on the first substrate SUB. The
semiconductor layer 570 includes the source 420S, a first lightly
doped region LDD1, a second lightly doped region LDD2, a channel
region 571 and the drain 420D. The channel region 571 is
polysilicon which is formed by a low-temperature (usually lower
than 600.degree. C.) way. The source 420S and the drain 420D are
heavily doped. The channel region 571 is formed between the first
lightly doped region LDD1 and the second lightly doped region LDD2.
The first lightly doped region LDD1 is formed between the source
420S and the channel region 571, and the second lightly doped
region LDD2 is formed between the channel region 571 and the drain
420D. The first insulation layer INS1 is formed on the
semiconductor layer 570, and includes a first contact hole 5L_1h
and a second contact hole 5L_2h to respectively expose the source
420S and the drain 420D. The first metal layer M1 is formed on the
first insulation layer INS1, and includes the gate 420G. The second
insulation layer INS2 is formed on the first insulation layer INS1,
and includes a third contact hole 5L_3h corresponding to the first
contact hole 5L_1h, and has a fourth contact hole 5L_4h
corresponding to the second contact hole 5L_2h. The gate 521G is
formed between the third contact hole 5E_3h and the fourth contact
hole 5E_4h. The first transparent conductive layer 511 is formed on
the second insulation layer INS2, and includes the pixel electrode
PE. The second metal layer M2 is formed on the second insulation
layer INS2. The data line 431 and the touch sensing line 550 are
formed in the second metal layer M2 in the display area. The data
line 431 is electrically connected to the source 420S through the
third contact hole 5L_3h and the first contact hole 5L_1h. The
second metal layer M2 also includes a filling structure 572 which
is electrically connected to the pixel electrode PE, and is
electrically connected to the drain 420D through the fourth contact
hole 5L_4h and the second contact hole 5L_2h. The third insulation
layer INS3 is formed on the second metal layer M2, and includes a
fifth contact hole 5L_5h to expose the touch sensing line 550. The
second transparent conductive layer 512 is formed on the third
insulation layer INS3, and is electrically connected to the touch
sensing lines 550 through the fifth contact hole 5L_5h. The second
transparent conductive layer 512 includes the sub-common electrode
COM which has several slits 512S.
[0077] When comparing FIG. 4A with FIG. 4B, because the touch
sensing line 550 and the data line 431 are both formed in the
second metal layer M2 in FIG. 4B, they are parallel to each other
and cannot overlap with each part, and thus an aperture ratio of
the pixel structure is decreased in order to dispose the lines,
however, the process cost is reduced. In FIG. 4A, because the touch
sensing line 432 and the data line 431 are formed in different
metal layers, the lines can overlap with each other, and
consequently increase the aperture ratio of the pixel structure.
However, whether the touch sensing line is formed in the second
metal layer or the third metal layer is not limited in the
invention.
[0078] In the embodiment of FIG. 4A, the data line 431 and the
touch sensing line 432 are not overlapped with each other along a
normal vector of the in-cell touch display panel, but the touch
sensing line 432 is made of metal that would decrease the aperture
ratio of the pixel structure. In some embodiments, the data line
431 and the touch sensing line 432 are partially overlapped with
each other along the normal vector of the in-cell touch display
panel, and the data line 431 and the touch sensing line 432 are
formed in different metal layers in the display area. For example,
referring to FIG. 6 and FIG. 7A, FIG. 6 is a diagram illustrating a
top view of pixel structure according to another embodiment, and
FIG. 7A is a diagram illustrating a cross-sectional view of the
pixel structure along a cross-sectional line CC' of FIG. 6. The
first metal layer M1 is formed on the substrate SUB, and the first
metal layer M1 includes the gate 420G. The first insulation layer
INS1 is formed on the first metal layer M1. The semiconductor layer
420C is formed on the first insulation layer INS1 as the channel of
the TFT 420. The first transparent conductive layer 511 is formed
on the first insulation layer INS1, and includes the pixel
electrode PE. The second metal layer M2 is formed on the
semiconductor layer 420C, and includes the source 420S and the
drain 420D which is electrically connected to the pixel electrode
PE. The second insulation layer INS2 is formed on the second metal
layer M2 and the first transparent conductive layer 511. The third
metal layer M3 is formed on the second insulation layer INS2, and
the touch sensing line 432 are formed in the third metal layer M3
in the display area 101. The third insulation layer INS3 is formed
on the third metal layer M3, and includes a contact hole 710. The
second transparent conductive layer 512 is formed on the third
insulation layer INS3, and includes the sub-common electrode COM.
The sub-common electrode COM has several slits 512S. In the display
area 101, the touch sensing line 432 is electrically connected to
the sub-common electrode COM through the contact hole 710. In
particular, the touch sensing line 432 and the data line 431 are at
least partially overlapped with each other along a normal vector
720 of the display panel.
[0079] In the embodiment of FIG. 7A, the sub-common electrode COM
is formed above the pixel electrode PE, but in other embodiments,
the sub-common electrode COM may be formed below the pixel
electrode PE. For example, referring to FIG. 7B which is similar to
FIG. 7A, and therefore the description of the similar components
will not be repeated. In the embodiment of FIG. 7B, the second
insulation layer INS2 includes a contact hole 731 to expose the
drain 420D. The first transparent conductive layer 511 is formed on
the second insulation layer INS2, and the first transparent
conductive layer 511 includes the sub-common electrode COM. The
third insulation layer INS3 is formed on the first transparent
conductive layer 511, and includes a contact hole 732 and a contact
hole 733. The contact hole 732 is corresponding to the contact hole
731. The third metal layer M3 is formed on the third insulation
layer INS3, and includes the touch sensing line 432 which is
electrically connected to the sub-common electrode COM through the
contact hole 733. The second transparent conductive layer 512 is
formed on the third insulation layer INS3 and the third metal layer
M3, and includes the pixel electrode PE and a touch sensing line
protection layer 740. The pixel electrode PE includes several slits
512S, and is electrically connected to the drain 420D through the
contact hole 732 and the contact hole 731. The touch sensing line
protection layer 740 covers the touch sensing line 432. Note that
the touch sensing line protection layer 740 is electrically
insulated from the pixel electrode PE, and the touch sensing line
protection layer 740 is used for protecting the touch sensing line
432 from the erosion of subsequent processes.
[0080] Referring to FIG. 4A again, the touch sensing line 432
includes a first part 441 and a second part 442. The second part
442 is formed in the third metal layer M3, but the first part 441
may be formed in the first metal layer, the second metal layer or
the third metal layer. A connection structure 440 is disposed in
the non-display area 102 for coupling the first part 441 to the
second part 442. Multiple embodiments are provided below.
[0081] FIG. 8A is a diagram illustrating a cross-sectional view of
the connection structure 440 along a cross-sectional line BB' of
FIG. 4A. The first part 441 is formed in the first metal layer M1
in the embodiment of FIG. 8A. To be specific, the first part 441 is
formed on the substrate SUB. The first insulation layer INS1 is
formed on the first metal layer M1, and includes a first opening
8A_1h to expose the first part 441. The second insulation layer
INS2 is formed on the first insulation layer INS1, and includes a
second opening 8A_2h which is corresponding to the first opening
8A_1h. The second part 442 is formed on the second insulation layer
INS2. The third insulation layer INS3 is formed on the third metal
layer M3 and the second insulation layer INS2, and includes a third
opening 8A_3h and a fourth opening 8A_4h. The third opening 8A_3h
is corresponding to the second opening 8A_2h, and the fourth
opening 8A_4h exposes the second part 442. The second transparent
conductive layer 512 is formed on the third insulation layer INS3,
and is electrically connected to the second part 442 through the
fourth opening 8A_4h, and is electrically connected to the first
part 441 through the first opening 8A_1h, the second opening 8A_1h
and the third opening 8A_3h. As a result, the first part 441 is
electrically connected to the second part 442.
[0082] FIG. 8B is a diagram illustrating a cross-sectional view of
the connection structure 440 along a cross-sectional line BB' of
FIG. 4A. In the embodiment of FIG. 8B, the first part 441 is formed
in the second metal layer M2. To be specific, the first insulation
layer INS1 is formed on the substrate SUB. The first part 441 is
formed on the first insulation layer INS1. The second insulation
layer INS2 includes a first opening 8B_1h to expose the first part
441. The second part 442 is formed on the second insulation layer
INS2. The third insulation layer INS3 includes a second opening
8B_2h and a third opening 8B_3h. The second opening 8B_2h is
corresponding to the first opening 8B_1h. The third opening 8B_3h
exposes the second part 442. The second transparent conductive
layer 512 is electrically connected to the second part 442 through
the third opening 8B_3h, and is electrically connected to the first
part 441 through the first opening 8B_1h and the second opening
8B_2h.
[0083] FIG. 8C is a diagram illustrating a cross-sectional view of
the connection structure 440 along a cross-sectional line BB' of
FIG. 4A. In the embodiment of FIG. 8C, the first part 441 is formed
in the third metal layer M3. To be specific, the first part 441 and
the second part 442 are formed on the second insulation layer INS2.
The third insulation layer INS3 includes a first opening 8C_1h to
expose the first part 441, and a second opening 8C_2h to expose the
second part 442. The second transparent conductive layer 512 is
electrically connected to the first part 441 through the first
opening 8C_1h, and is electrically connected to the second part 442
through the second opening 8C_2h.
[0084] Referring to FIG. 4A, in some embodiments, the data line 431
is transferred to the first metal layer or the third metal layer,
or remains in the second metal layer by a connection structure 450.
The connection structure 450 is similar to the connection structure
440, and both of them electrically connect different metal layers
through a transparent conductive layer. However, people in the art
should be able to implement the connection structure 450 according
to the disclosure in FIG. 8A to FIG. 8C. On the other hand, in the
embodiment of FIG. 8C, although both of the first part 441 and the
second part 442 are formed in the third metal layer M3, the
disposition of the connection structure 440 can achieve the
impedance matching between the touch sensing line 432 and the data
line 431.
[0085] Referring to FIG. 4B, the touch sensing line 550 includes a
first part 581 and a second part 582. The second part 582 is formed
in the second metal layer M2, and the first part 581 may be formed
in the first metal layer or the second metal layer. A connection
structure 580 is used to couple the second part 582 to the first
part 581. For example, referring to FIG. 8D, the first part 581 is
formed in the first metal layer M1. In detail, the first part 581
is formed on the first substrate SUB. The first insulation layer
INS1 is formed on the first metal layer M1, and includes a first
opening 8D_1h to expose the first part 581. The second part 582 is
formed on the first insulation layer INS1. The second insulation
layer INS2 is formed on the second metal layer M2, and includes a
second opening 8D_2h and a third opening 8D_3h. The second opening
8D_2h is corresponding to the first opening 8D_1h, and the third
opening 8D_3h exposes the second part 582. The second transparent
conductive layer 512 is formed on the second insulation layer INS2,
and is electrically connected to the second part 582 through the
third opening 8D_3h, and is electrically connected to the first
part 581 through the first opening 8D_2h and the second opening
8D_1h.
[0086] On the other hand, in the embodiment of FIG. 8E, both of the
first part 581 and the second part 582 are formed in the second
metal layer M2. In detail, the first insulation layer INS1 is
formed on the first substrate SUB. The second metal layer M2 is
formed on the first insulation layer INS1. The second insulation
layer INS2 is formed on the second metal layer M2, and includes a
first opening 8E_1h and a second opening 8E_2h. The first opening
8E_1h exposes the first part, and the second opening 8E_2h exposes
the second part 582. The second transparent conductive layer 512 is
formed on the second insulation layer INS2, and is electrically
connected to the first part 581 through the first opening 8E_1h,
and is electrically connected to the second part 582 through the
second opening 8E_2h.
[0087] FIG. 8D and FIG. 8E can be applied to the embodiment of FIG.
5J, but FIG. 5K and FIG. 5L may have their respective connection
structure. For example, referring to FIG. 8F, a connection
structure 580 can be applied to the structure of FIG. 5K. To be
specific, the first part 581 is formed on the first substrate SUB.
The first insulation layer INS1 is formed on the first metal layer
M1, and includes a first opening 8F_1h to expose the first part
581. The second insulation layer INS2 is formed on the first
insulation layer INS1, and includes a second opening 8F_2h
corresponding to the first opening 8F_1h. The second part 582 is
formed on the second insulation layer INS2. The third insulation
layer INS3 is formed on the second metal layer M2, and includes a
third opening 8F_3h corresponding to the second opening 8F_2h, and
a fourth opening 8F_4h exposing the second part 582. The second
transparent conductive layer 512 is formed on the third insulation
layer INS3, and is electrically connected to the second part 582
through the fourth opening 8F_4h, and is electrically connected to
the first part 581 through the third opening 8F_3h, second opening
8F_2h and first opening 8F_1h.
[0088] Referring to FIG. 8G which can be also applied to FIG. 5K,
in which the first part 581 is formed in the second metal layer. To
be specific, the first insulation layer INS1, the second insulation
layer INS2 and the second metal layer M2 are sequentially formed on
the first substrate SUB. The first opening 8G_1h exposes the first
part 581, and the second opening 8G_2h exposes the second part 582.
The transparent conductive layer 512 is electrically connected to
the first part 581 through the first opening 8G_1h, and is
electrically connected to the second part 582 through the second
opening 8G_2h.
[0089] Moreover, FIG. 8H and FIG. 8I can be applied to the
structure of FIG. 5L. In FIG. 8H, the first metal layer M1 is
formed on the first insulation layer INS1. The second insulation
layer INS2 includes a first opening 8H_1h to expose the first part
581. The second insulation layer INS2 includes a second opening
8H_2h corresponding to the first opening 8H_1h, and a third opening
8H_3h to expose the second part 582. The transparent conductive
layer 512 is electrically connected to the second part 582 through
the third opening 8H_3h, and is electrically connected to the first
part 581 through the second opening 8H_2h and the first opening
8H_1h. In FIG. 8I, the first part 581 and the second part 582 are
both formed in the second metal layer M2. The third insulation
layer INS3 includes a first opening 8I_1h to expose the first part
581, and a second opening 8I_2h to expose the second part 582. The
transparent conductive layer 512 is electrically connected to the
first part 581 through the first opening 8I_1h, and is electrically
connected to the second part 582 through the second opening
8I_2h.
[0090] From another aspect, in the embodiments of FIG. 8A to FIG.
8I, the connection structure includes the first part, the second
part, more than one insulation layers and a transparent conductive
layer. The insulation layers include more than one opening to
expose the first part and the second part, and the transparent
conductive layer is electrically connected to the first part and
the second part through the openings.
[0091] Referring to FIG. 6, in the embodiment of FIG. 6, the touch
sensing line 432 includes a first part 611 and a second part 612.
The second part 612 is formed in the third metal layer, but the
first part 611 may be formed in the first metal layer, the second
metal layer or the third metal layer. A connection structure 610 is
disposed in the non-display area 102 for coupling the first part
611 to the second part 612. Multiple embodiments are provided below
to describe the connection structure 610.
[0092] Referring to FIG. 6 and FIG. 9A, FIG. 9A is a diagram
illustrating a cross-sectional view of the connection structure 610
along a cross-sectional line DD' of FIG. 6. In the embodiment of
FIG. 9A, the first part 611 is formed in the first metal layer M1.
To be specific, the first part 611 of the first metal layer M1 is
formed on the substrate SUB. The first insulation layer INS1 is
formed on the first metal layer M1 and includes a first opening
9A_1h to expose the first part 611. A metal electrode 901 formed in
the second metal layer M2 is electrically connected to the first
part 611 through the first opening 9A_1h. The metal electrode 901
is not electrically connected to the data lines, the sources or the
drains in the second metal layer M2. A first electrical connection
part 911 formed in the first transparent conductive layer 511 is
electrically connected to the metal electrode 901. The first
electrical connection part 911 is not electrically connected to the
pixel electrode or the common electrode in the first transparent
conductive layer 511. The second insulation layer INS2 includes a
second opening 9A_2h to expose the first electrical connection part
911. The second part 612 of the third metal layer M3 is formed on
the second insulation layer INS2, and is electrically connected to
the first electrical connection part 911 through the second opening
9A_2h. The third insulation layer INS3 includes a third opening
9A_3h to expose the second part 612. A second electrical connection
part 912 formed in the second transparent conductive layer 512 is
electrically connected to the second part 612 through the third
opening 9A_3h. The second electrical connection part 912 is not
electrically connected to the pixel electrode or the common
electrode in the second transparent conductive layer 512. As a
result, the second part 612 is electrically connected to the first
part 611 through the first electrical connection part 911 and the
metal electrode 901. The metal electrode 901 and the first
electrical connection part 911 are used to avoid deep opening in
the connection structure 610, and the second electrical connection
part 912 is used to prevent the second part 612 from the erosion of
subsequent processes.
[0093] Referring to FIG. 6 and FIG. 9B, in the embodiment of FIG.
9B, the first part 611 is formed in the second metal layer M2. To
be specific, the first insulation layer INS1 is formed on the
substrate SUB. The first part 611 is formed on the first insulation
layer INS1. The second insulation layer INS2 includes a first
opening 9B_1h to expose the first part 611. The second part 612 is
formed on the second insulation layer INS2, and is electrically
connected to the first part 611 through the first opening 9B_1h.
The third insulation layer INS3 includes a second opening 9B_2h to
expose the second part 612. An electrical connection part 921
formed in the second transparent conductive layer 512 is
electrically connected to the second part 612 through the second
opening 9B_2h. The electrical connection part 921 is not
electrically connected to the pixel electrode or the common
electrode in the second transparent conductive layer 512. The
electrical connection part 921 is used to prevent the second part
612 from the erosion of subsequent processes.
[0094] Referring to FIG. 6 and FIG. 9C, in the embodiment of FIG.
9C, the first part 611 and the second part 612 are formed in the
third metal layer M3. As shown in FIG. 9C, the first insulation
layer INS1, the second insulation layer INS2, the third metal layer
M3 and the second transparent conductive layer 512 are sequentially
formed on the substrate SUB. The second transparent conductive
layer 512 is used to prevent the third metal layer M3 from the
erosion of subsequent processes.
[0095] In addition, in some embodiments, the touch sensing lines
are formed in the second metal layer in the display area, and
therefore the connection structure 610 may be used to transfer the
second metal layer to the first metal layer. For example, referring
to FIG. 9D, the first part 611 is formed in the first metal layer
M1 and on the first substrate SUB. The first insulation layer INS1
is formed on the first metal layer M1, and includes a first opening
9D_1h to expose the first part 611. The second part 612 is formed
in the second metal layer M2 and on the first insulation layer
INS1. The second part 612 is electrically connected to the first
part 611 through the first opening 9D_1h.
[0096] Referring to FIG. 9E, in the embodiment of FIG. 9E, the
first part 611 and the second part 612 are both formed in the
second metal layer M2. The first insulation layer INS1, second
metal layer M2 and the second insulation layer INS2 are
sequentially formed on the first substrate SUB.
[0097] Embodiments of FIG. 9D and FIG. 9E can be applied to the
structure of FIG. 5J, but FIG. 5L and FIG. 5K may have respective
connection structures. For example, referring to FIG. 9F which can
be applied to the structure of FIG. 5L, the first part 611 is
formed in the first metal layer M1, and on the first substrate SUB.
The first insulation layer INS1 is formed on the first metal layer
M1, and includes a first opening 9F_1h to expose the first part
611. The second insulation layer INS2 includes a second opening
9F_2h corresponding to the first opening 9F_1h. The second part 612
is formed in the second metal layer, and is electrically connected
to the first part 611 through the second opening 9F_2h and the
first opening 9F_1h. On the other hand, FIG. 9G can be applied to
the structure of FIG. 5K. In FIG. 9G, the first metal layer M1 is
formed on the first insulation layer INS1. The second insulation
layer INS2 is formed on the first metal layer M1, includes a first
opening 9G_1h to expose the first part 611. The second part 612 is
formed in the second metal layer M2, and is electrically connected
to the first part 611 through the first opening 9G_1h.
[0098] In the embodiment of FIG. 6, a connection structure 620 is
disposed on the data line 431. The connection structure 620 is used
to transfer the data line 431 to the first metal layer M1 or the
third metal layer M3, or keeps the data line 431 in second metal
layer M2. People in the art should be able to implement the
connection structure 620 according to the disclosure of the
connection structure 610. The data line 431 and the touch sensing
line 432 may belong to different metal layers due to the connection
structures 610 and 620.
[0099] Referring to FIG. 4A and FIG. 6, the connection structure
440 is used in FIG. 4A, and the connection structure 610 is used in
FIG. 6 in the embodiments described above, but the invention is not
limited thereto. The connection structure 440 may also be applied
to the embodiment of FIG. 6, and the connection structure 610 may
be applied to the embodiment of FIG. 4A. On the other hand, the
pixel electrode may be disposed above the common electrode, and
vice versa. The touch sensing lines may be formed in the third
metal layer or the second metal layer. In other words, there are
four options in these embodiments: whether the touch sensing line
is formed in the third metal layer or the second metal layer;
whether the touch sensing line 432 covers the data line 431;
whether the pixel electrode is above the common electrode; and
whether the connection structure 440 or the connection structure
610 is used. These four options can be arbitrarily chosen. In
addition, whether the data line 431 and the touch sensing line 432
are transferred to the first metal layer M1, the second metal layer
M2 or the third metal layer M3 is not limited in the invention. In
a preferred embodiment, the data line 431 and the touch sensing
line 432 are formed in different metal layers in the non-display
area 102, and thus the pitch between them could be reduced.
[0100] The signal line transfer area 103 exists in the embodiments
above, and the connection structure therein is used to transfer the
data lines/touch sensing lines to different metal layers. However,
in some embodiments, if the resolution requirement of the panel is
relatively lower, then the function of the connection structure may
be implemented in the touch pads and/or display pads.
[0101] The self-conductive capacitance is used for sensing in the
in-cell touch display panel in the specification. That is, a
transmitter (TX) sensing signal and a receiver (RC) sensing signal
is transmitted to the touch electrodes and the touch pads through
the touch sensing lines. The metal layer in the specification may
be a single layer of metal including aluminum, copper, titanium,
tungsten, etc. or a composite metal layer including
molybdenum/aluminum/molybdenum, titanium/aluminum titanium,
titanium/copper/titanium, which is not limited in the invention. On
the other hand, the insulation layer in the specification may be
silicon nitride, silicon oxide, silicon oxynitride or other
suitable insulation layer. In addition, a single insulation layer
in the figures may include more than one stacked insulation layers
with different material. Moreover, some of the contact holes or
openings have vertical sidewalls, and some of the contact holes or
openings have tapered sidewalls, but it should be appreciated that
all contact holes of openings have tapered sidewalls in practice.
The figures are just for schematic illustration. When "contact hole
to expose" is described, it means to partially expose the component
beneath or to completely expose the component beneath, which is not
limited in the invention.
[0102] Herein, examples are provided to describe the method for
manufacturing the in-cell touch display panel. FIG. 10A to FIG. 10G
is top views of intermediary stages for manufacturing pixel
stricture in accordance with an embodiment. Referring to FIG. 4A,
FIG. 5A and FIG. 10A, the first metal layer M1 is first formed.
Referring to FIG. 4A, FIG. 5A and FIG. 10B, the first insulation
layer INS1 (not shown in FIG. 4A and FIG. 10B) is formed on the
first metal layer M1, and then the semiconductor layer 420C and
ohmic contacts (not shown) on the semiconductor layer 420C are
formed. The semiconductor layer 420C may be a-si, polysilicon, or
metal oxide, which is not limited in the invention. The ohmic
contacts may be N-type doped polysilicon or metal oxide with high
conductivity for electrically connecting the semiconductor layer
420C and the subsequent second metal layer M2.
[0103] Referring to FIG. 4A, FIG. 5A and FIG. 10C, the first
transparent conductive layer 511 is formed. The first transparent
conductive layer 511 includes the pixel electrode PE. The first
transparent conductive layer 511 may be indium tin oxide (ITO),
indium zinc oxide (IZO), antimony tin oxide (ATO), fluorine tin
oxide (FTO) or other conductive and transparent material.
[0104] Referring to FIG. 4A, FIG. 5A and FIG. 10D, the second metal
layer M2 is formed. The second metal layer M2 includes the drain
420D and the source 420S. Next, the second insulation layer INS2 is
formed on the second metal layer M2 and the first transparent
conductive layer 511. Because the second insulation layer INS2
covers the whole pixel structure, for simplification, it is not
shown in FIG. 10D.
[0105] Referring to FIG. 4A, FIG. 5A and FIG. 10E, the third metal
layer M3 is formed. The third metal layer M3 includes the touch
sensing line 432.
[0106] Next, referring to FIG. 4A, FIG. 5A and FIG. 10F, the third
insulation layer INS3 is formed on the third metal layer M3. The
third insulation layer INS3 includes a contact hole 520 for
exposing part of the touch sensing line 432.
[0107] Referring to FIG. 4A, FIG. 5A and FIG. 10G, the second
transparent conductive layer 512 is formed on the third insulation
layer INS3. The second transparent conductive layer 512 is
electrically connected to the touch sensing line 432 through the
contact hole 520. The second transparent conductive layer 512 is
taken as the sub-common electrode COM in the pixel structure, and
it includes slits 512S. The second transparent conductive layer 512
may be indium tin oxide (ITO), indium zinc oxide (IZO), antimony
tin oxide (ATO), fluorine tin oxide (FTO) or other conductive and
transparent material.
[0108] Although the present invention has been described in
considerable detail with reference to certain embodiments thereof,
other embodiments are possible. Therefore, the spirit and scope of
the appended claims should not be limited to the description of the
embodiments contained herein. It will be apparent to those skilled
in the art that various modifications and variations can be made to
the structure of the present invention without departing from the
scope or spirit of the invention. In view of the foregoing, it is
intended that the present invention cover modifications and
variations of this invention provided they fall within the scope of
the following claims.
* * * * *