U.S. patent application number 15/864482 was filed with the patent office on 2018-05-17 for solid-state imaging device.
This patent application is currently assigned to Sony Semiconductor Solutions Corporation. The applicant listed for this patent is Sony Semiconductor Solutions Corporation. Invention is credited to Kazuichiro ITONAGA.
Application Number | 20180138217 15/864482 |
Document ID | / |
Family ID | 38119393 |
Filed Date | 2018-05-17 |
United States Patent
Application |
20180138217 |
Kind Code |
A1 |
ITONAGA; Kazuichiro |
May 17, 2018 |
SOLID-STATE IMAGING DEVICE
Abstract
An imaging device that includes a substrate, a photoelectric
conversion section disposed in the substrate, an element isolation
region disposed adjacent to the photoelectric conversion section, a
floating diffusion electrically connected to the photoelectric
conversion section, an amplification transistor having a gate
electrode and an active region, and a contact section disposed on
the gate electrode of the amplification transistor. The contact
section overlaps the active region of the amplification transistor.
The floating diffusion is electrically connected to the gate
electrode of the amplification transistor via the contact section.
The width of the gate electrode of the amplification transistor is
larger than a width of the active region of the amplification
transistor. The photoelectric conversion section includes a first
type impurity, and the element isolation region includes a second
type impurity having a conductivity opposite to the first type
impurity.
Inventors: |
ITONAGA; Kazuichiro; (Tokyo,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Sony Semiconductor Solutions Corporation |
Kanagawa |
|
JP |
|
|
Assignee: |
Sony Semiconductor Solutions
Corporation
|
Family ID: |
38119393 |
Appl. No.: |
15/864482 |
Filed: |
January 8, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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15465277 |
Mar 21, 2017 |
9887226 |
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15864482 |
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15074511 |
Mar 18, 2016 |
9640573 |
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15465277 |
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13939980 |
Jul 11, 2013 |
9318523 |
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15074511 |
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11604985 |
Nov 27, 2006 |
8507960 |
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13939980 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/14689 20130101;
H01L 27/14636 20130101; H01L 27/1463 20130101; H01L 27/14614
20130101; H01L 27/14643 20130101; H01L 27/14607 20130101 |
International
Class: |
H01L 27/146 20060101
H01L027/146 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 5, 2005 |
JP |
2005-351368 |
Claims
1. (canceled)
2. An imaging device comprising: an amplification transistor
including an active region having a first width, a gate electrode
having a second width that is larger than the first width, and a
contact region at the gate electrode; and a floating diffusion that
is electrically connected to the gate electrode via the contact
region.
3. The imaging device according to claim 2, further comprising: a
substrate; and a photoelectric conversion region in the substrate,
the photoelectric conversion region configured to generate a signal
charge according to an amount of incident light, wherein the
floating diffusion is electrically connected to the photoelectric
conversion region, and wherein the contact region overlaps the
active region.
4. The imaging device according to claim 3, further comprising an
element isolation region adjacent to the photoelectric conversion
region.
5. The imaging device according to claim 2, further comprising a
substrate; a photoelectric conversion region in the substrate the
photoelectric conversion region configured to generate a signal
charge according to an amount of incident light; and an element
isolation region adjacent to the photoelectric conversion region,
wherein the floating diffusion is electrically connected to the
photoelectric conversion region, and wherein the contact region
overlaps the element isolation region.
6. The imaging device according to claim 5, wherein the
amplification transistor further includes a drain region and a
source region, and wherein the drain region and the source region
include a first type impurity having a first conductivity.
7. The imaging device according to claim 6, wherein the element
isolation region includes a second type impurity having a second
conductivity that is opposite to the first conductivity of the
first type impurity.
8. The imaging device according to claim 7, wherein the second type
impurity is a p-type impurity, and wherein the first type impurity
is an n-type impurity.
9. The imaging device according to claim 5, wherein the
photoelectric conversion region includes a first type impurity
having a first conductivity.
10. The imaging device according to claim 9, wherein the element
isolation region includes a second type impurity having a second
conductivity that is opposite to the first conductivity of the
first type impurity.
11. The imaging device according to claim 10, wherein the second
type impurity is a p-type impurity, and wherein the first type
impurity is an n-type impurity.
12. The imaging device according to the claim 5, further comprising
a second photoelectric conversion region, wherein the element
isolation region is between the photoelectric conversion region and
the second photoelectric conversion region.
13. The imaging device according to the claim 5, wherein the
element isolation region includes an insulation film over the
substrate; and an impurity region of a second type impurity under
the insulation film.
14. The imaging device according to the claim 13, wherein the
impurity region of the second type impurity has a first impurity
region and a second impurity region.
15. The imaging device according to the claim 14, wherein the first
impurity region is a p+ impurity region, and wherein the second
impurity region is a p impurity region.
16. The imaging device according to the claim 14, wherein the first
impurity region has a first shape that is a different than a second
shape of the second impurity region.
17. The imaging device according to the claim 14, wherein the first
impurity region is above the second impurity region.
18. The imaging device according to the claim 14, wherein the
second impurity region is at least adjacent to a drain area of the
amplification transistor.
19. The imaging device according to the claim 2, further
comprising: a reset transistor having a reset gate electrode having
a third width, and a reset active region having a fourth width that
is larger than the third width.
20. The imaging device according to the claim 2, further
comprising: a selection transistor having a selection gate
electrode having a third width, and a selection active region
having a fourth width that is larger than the third width.
21. An electronic device comprising: imaging circuitry including an
amplification transistor including an active region having a first
width, a gate electrode having a second width that is larger than
the first width, and a contact region at the gate electrode; and a
floating diffusion that is electrically connected to the gate
electrode via the contact region.
Description
CROSS REFERENCES TO RELATED APPLICATIONS
[0001] The present application is a continuation Application of
application Ser. No. 15/465,277 filed Mar. 21, 2017 which is a
continuation application of application Ser. No. 15/074,511, filed
Mar. 18, 2016, now U.S. Pat. No. 9,640,573, issued May 2, 2017,
which is a continuation application of application Ser. No.
13/939,980, filed on Jul. 11, 2013, now U.S. Pat. No. 9,318,523,
issued Apr. 19, 2016, which is a continuation application of
application Ser. No. 11/604,985, filed Nov. 27, 2006, now U.S. Pat.
No. 8,507,960, issued Aug. 13, 2013, which claims priority to
Japanese Patent Application JP 2005-351368 filed in the Japanese
Patent Office on Dec. 5, 2005, the entire contents of which being
incorporated herein by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0002] The present invention relates to solid-state imaging devices
and, more specifically, to a solid-state imaging device in which a
pixel includes a conversion section that converts an electric
charge generated by photoelectric conversion into a pixel signal,
e.g., CMOS (Complementary Metal Oxide Semiconductor) sensor. The
CMOS sensor is manufactured through entire or partial application
of a CMOS process.
[0003] The solid-state imaging device may be a one-chip element, or
configured by a plurality of chips.
2. Description of the Related Art
[0004] For MOS (Metal Oxide Semiconductor) devices, LOCOS (Local
Oxidation of Silicon) isolation has been generally used for element
isolation. In recent years, to deal with smaller device size, STI
(Shallow Trench Isolation) is getting popular for element
isolation.
[0005] In solid-state imaging devices such as CMOS sensors, STI is
also getting popular for element isolation (refer to Patent
Document 1 (JP-A-2002-270808)). A solid-state imaging device is
configured by a pixel area, and a peripheral circuit that drives
the pixel area for signal processing. The size reduction technology
for the peripheral circuit is adopted also for the pixel area. For
pixels in any recently-size-reduced solid-state imaging device, STI
is also generally used for element isolation similarly to the
peripheral circuit.
[0006] FIG. 24 shows the cross sectional configuration of the main
section of a previous solid-state imaging device to which STI is
applied. In this STI-applied solid-state imaging device 1, an
n-type silicon substrate 2 is formed with a p-type semiconductor
well area 3. The p-type semiconductor well area 3 is formed with a
trench 4, and inside of the trench 4, a silicon oxide film 5 is
embedded so that an STI area 6 is formed. This STI area 6 is an
element isolation area that applies element isolation inside of a
pixel and between any two adjacent pixels. With the STI area 6, two
adjacent pixels 10A and 10B are isolated from each other, and in
the pixels 10A and 10B, photodiodes PD or a plurality of
transistors are also isolated from one another, for example. Note
here that a pixel is configured by a photodiode PD serving as a
photoelectric conversion section, and a plurality of transistors
Tr.
[0007] The photodiode PD is of an HAD (Hall Accumulated Diode),
configuration including the so-called n-type substrate 2, the
p-type semiconductor well area 3, an n-type charge storage area 7,
an insulation film 8 on the surface side, and a p+ accumulation
layer 9. Out of a plurality of transistors, a transfer transistor
is specifically configured by forming a transfer gate electrode 13.
In the transfer gate electrode 13, a gate insulation film 12 is
disposed between the n-type charge storage area 7 of the photodiode
PD, and an n-type drain area 11 serving as a floating diffusion
(FD). To the STI area 6, a p+ area 14 is formed at an interface
among the deeply-embedded silicon oxide film 5, the n-type charge
storage area 7, and the p-type semiconductor well area 3. The p+
area 14 is provided with the aim of preventing dark currents and
white spots.
[0008] With the solid-state imaging device using the
above-described STI as a technology of pixel area isolation,
however, two problems are observed as below. The first problem is
that a crystal defect easily occurs due to thermal stress. With the
STI, the trench 4 is formed with a depth to the silicon substrate,
and the silicon oxide film 5 is embedded therein so that the
element isolation area 6 is formed. With such a configuration,
there is indeed an advantage of forming a small-sized element
isolation are, however, a difference of thermal expansion
coefficient between the deeply-embedded silicon oxide film 5 and
the silicon substrate causes the thermal stress. For improvement,
some design change is made like the shape for STI is tapered, for
example. With the tapered shape, however, the area of the
photodiode PD is reduced, resulting in the fewer amount of
saturation signal, and the poorer sensitivity.
[0009] The second problem is the p+ area 14 disposed between the
silicon oxide film 5 in the trench 4 and the photodiode PD for the
aim of preventing the dark currents and white spots. This P+ area
14 is required to have the impurity concentration of a level about
the same as that of the p+ accumulation layer 9 on the surface of
the diode PD. However, in terms of configuration, covering
three-dimensionally the depth direction with sufficient
concentration is difficult. What is more, because the p+ area 14 is
formed in the initial stage, the p+ area 14 is expanded to the side
of the photodiode PD due to the thermal diffusion. This resultantly
reduces the area of the photodiode PD, thereby causing the
reduction of the amount of saturation signal.
SUMMARY OF THE INVENTION
[0010] The applicant of the invention has proposed a solid-state
imaging device to achieve improvement for the previous STI. FIG. 20
is a schematic diagram of a pixel viewed from the above, and FIG.
21 is a cross sectional view of the pixel of FIG. 20 cut along a
line A-A. As shown in FIG. 20, in this solid-state imaging device
21, a pixel 22 is configured by a photodiode PD and a plurality of
transistors Tr, and in this example, by three MOS transistors of a
transfer transistor Tr1, a reset transistor Tr2, and an amplifying
transistor Tr3. Note here that a reference numeral 36 denotes a
gate electrode of the transfer transistor Tr1, a reference numeral
37 denotes a gate electrode of the reset transistor Tr2, and a
reference numeral 38 denotes a gate electrode of the amplifying
transistor Tr3.
[0011] As shown in FIG. 21, the pixel 22 is formed to a p-type
semiconductor well area 24, which is formed to an n-type silicon
semiconductor substrate 23, for example. The photodiode PD is
formed by an n-type charge storage area 25 inside of the p-type
semiconductor well area 24, and a p-type accumulation layer 26 on
the surface thereof. The transfer transistor Tr1 is formed by an
n-type charge storage area 25 of the photodiode PD, an n-type
source/drain area (drain area in this example) 26, and a transfer
gate electrode 36. The n-type source/drain area 26 serves as a
floating diffusion (FD), and the transfer gate electrode 36 is
formed via a gate insulation film 27. The reset transistor Tr2 is
formed by, similarly, the n-type source drain area (drain area in
this example) 26 inside of the p-type semiconductor well area 24,
an n-type source/drain area (source area in this example) 39, and a
gate electrode 37 formed via the gate insulation film. The
amplifying transistor Tr3 is formed by, similarly, the n-type
source/drain area (drain area in this example) 39 inside of the
p-type semiconductor well area 24, a source/drain area (source area
in this example) 40, and a gate electrode 38 formed via the gate
insulation film. An element isolation area 31 is formed by a
relatively-shallow p+ area 32, a relatively-deep p area 33, and a
thick oxide film 35 formed on another thin oxide film 34 on the
substrate.
[0012] In this example, to establish a contact between the gate
electrode 38 of the amplifying transistor Tr3 and wiring, an
extension section 38a of the gate electrode 38 is formed by being
extended onto the insulation film 35 of the element isolation area
31. With this element isolation area 31, a diffusion layer takes
charge of element isolation, and the element isolation area can be
reduced in width while preventing white spots or dark currents from
being caused by crystal defect. The photodiode can be thus large in
area, and the saturation signal can be increased in amount. The
element isolation area 31 is formed, on its surface, with the thick
oxide film 35, and the extension section 38a of the gate electrode
38 is formed by being extended onto the oxide film 35. This thus
prevents the formation of a parasitic MOS transistor in the pixel
by the source area 40, the extension section 38a of the gate
electrode 38, and the floating diffusion (FD) in the amplifying
transistor Tr3 so that the normal sensor operation can be
guaranteed.
[0013] With such an element isolation area 31, however, there is a
possibility that the silicon substrate may be damaged, although
slightly, when manufactured. As shown in FIGS. 22A to 23E, the
semiconductor well area 24 of the silicon substrate is formed
thereon with a silicon oxide film 24, and a silicon nitride film 43
in this order. After film formation as such, the silicon nitride
film 43 is selectively removed from any target area for element
isolation by dry etching, for example. As a result of such film
removal, a concave section 44 is formed (refer to FIG. 22A). With
dry etching, however, the silicon oxide film 34 being the base may
be also etched a little, and the semiconductor well area 24 may be
also suffered from damage on the surface, i.e., a damaged section
45.
[0014] Next, using the silicon nitride film 43 as a mask, a p-type
impurity 47 is used for ion implantation, and a p+ area 32 is
formed (refer to FIG. 22B). The p-type impurity has a relatively
high concentration.
[0015] A silicon oxide film 48 is then formed, by CVD
(Chemical-Vapor Deposition), on the surface of the silicon nitride
film 43 including the concave section 44. A p-type impurity 49 is
used this time for ion implantation so that the deep p area 33 is
formed adjacent to the p+ area 32 (refer to FIG. 22C).
[0016] The silicon oxide film 50 is then embedded inside of the
concave section 44 by CVD, and the surface is made flat by CMP
(Chemical Mechanical Polish) or others (refer to FIG. 23D).
[0017] The silicon oxide film 48 is selectively removed together
with the silicon nitride film 43 there below, thereby forming an
insulation layer 35 only on the p+ area 32. As such, the element
isolation area 31 is formed by the p area 32, the p+ area 33, and
the insulation layer 35 (refer to FIG. 23E).
[0018] In the above manufacturing process, there is a possibility
that the semiconductor well area 24 may be formed, on its surface,
with the damaged section 45 although slightly by the etching
process of FIG. 22A. The damaged section 45 is negligible under the
current circumstances, however, if the solid-state imaging device
to be equipped in mobile equipment, e.g., mobile phone, is
increased in resolution, the existence of the damaged section 45
becomes not negligible, and will start affecting the properties. In
the solid-state imaging device, the gate electrode of the
transistor Tr of the pixel is connected with wiring. The gate
electrode is generally connected to, i.e., made in contact with,
wiring at the extension section 38a of the gate electrode 38
extending onto the element isolation area 31 if with the amplifying
transistor Tr3, for example. With the element isolation
configuration of FIG. 21, the extension section 38a of the gate
electrode 38 is extended onto the insulation layer 35 of the
element isolation area 31. The surface flatness is thus lost in
terms of configuration, and the configuration becomes
complicated.
[0019] It is thus desirable to provide a solid-state imaging device
that has better characteristics than the previous type, e.g., the
configuration is simpler, and white spots or others are observed
less frequently.
[0020] According to a first embodiment of the invention, there is
provided a solid-state imaging device that includes a pixel
including a photoelectric conversion section, and a conversion
section that converts an electric charge generated by photoelectric
conversion into a pixel signal. In the solid-state imaging device,
substantially only a gate insulation film is formed on a substrate
corresponding to an area under a gate electrode of at least one
transistor in the pixel.
[0021] With the solid-state imaging device of the first embodiment,
substantially only a gate insulation film is formed on a substrate
corresponding to an area under a gate electrode of a transistor,
and the substrate includes a channel area and an element isolation
area. With such a configuration, the gate electrode extending onto
the element isolation area is formed also flat. That is, the
element isolation area is not covered by a thick insulation
layer.
[0022] Accordingly, unlike element isolation performed with any
thick insulation layer, no damage is caused by etching so that
generation of dark currents and white spots is prevented.
[0023] According to a second embodiment of the invention, there is
provided a solid-state imaging device that includes: a pixel
including a photoelectric conversion section and a conversion
section that converts an electric charge generated by photoelectric
conversion into a pixel signal. In the solid-state imaging device,
a gate electrode of at least one transistor in the pixel includes a
first section formed directly above a channel, and a second section
formed on a substrate in the vicinity of the channel, and an
impurity combination for implantation to the first section/the
second section is any of p-type/no-doped, n-type/no-doped,
n-type/p-type, and p-type/n-type.
[0024] With the solid-state imaging device of the second
embodiment, an impurity combination for implantation is set as
above between the first section directly above the channel of the
gate electrode, and the second section extended onto the substrate
in the vicinity of the channel. With such a setting, even if the
first section directly above the channel of the gate electrode is
applied with any needed gate voltage, the gate voltage is not
applied to the second electrode extended onto the substrate in the
vicinity of the channel. This accordingly stops the formation of a
parasitic MOS transistor.
[0025] According to a third embodiment of the invention, there is
provided an imaging apparatus that includes: a solid-state imaging
part including a pixel with a photoelectric conversion section and
a conversion section configured to convert an electric charge
generated by photoelectric conversion into a pixel signal, wherein
substantially only a gate insulation film is formed on a substrate
corresponding to an area under a gate electrode of at least one
transistor in the pixel; and a driving control part including a
control section configured to control driving of the one transistor
in the pixel included in said solid-state imaging part.
[0026] According to the solid-state imaging device of the
embodiment of the invention, substantially only a gate insulation
film is formed on a substrate corresponding to an area under a gate
electrode of a transistor, and a gate electrode extending to the
substrate, e.g., an element isolation area, does not extend onto an
insulation film formed on the element isolation area. The surface
thus can be made flat, and the configuration can be accordingly
simplified.
[0027] What is better, the generation of dark currents and white
spots is prevented better than a case of performing isolation with
an insulation layer, for example, thereby improving the
characteristics of the resulting solid-state imaging device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0028] FIG. 1 is a plan layout diagram of a solid-state imaging
device of a first embodiment of the invention;
[0029] FIGS. 2A to 2C are cross sectional views of the solid-state
imaging device of FIG. 1 cut along a line A-A, a line B-B, and a
line C-C, respectively;
[0030] FIG. 3 is an equivalent circuit diagram of a unit pixel in
the first embodiment;
[0031] FIG. 4 is a plan layout diagram of a solid-state imaging
device of a second embodiment of the invention;
[0032] FIGS. 5A to 5C are cross sectional views of the solid-state
imaging device of FIG. 4 cut along a line A-A, a line B-B, and a
line C-C, respectively;
[0033] FIG. 6A to 6C are each a plan view of an exemplary contact
section between a gate electrode and wiring;
[0034] FIGS. 7A and 7B are a plan view and a cross sectional view,
respectively, of an exemplary gate electrode of a transistor;
[0035] FIGS. 8A and 8B are a plan view and a cross sectional view,
respectively, of another exemplary gate electrode of the
transistor;
[0036] FIGS. 9A and 9B are a plan view and a cross sectional view,
respectively, of still another exemplary gate electrode of the
transistor;
[0037] FIGS. 10A and 10B are a plan view and a cross sectional
view, respectively, of still another exemplary gate electrode of
the transistor;
[0038] FIG. 11 is a cross sectional view of an exemplary impurity
area of an element isolation area of the second embodiment;
[0039] FIG. 12 is a cross sectional view of another exemplary
impurity area of an element isolation area of the second
embodiment;
[0040] FIG. 13 is a cross sectional view showing exemplary
configurations of main components on a photodiode formed with an
anti-reflective film of the second embodiment;
[0041] FIG. 14 is a plan view of main components for use for
illustrating the second embodiment;
[0042] FIGS. 15A to 15E are all a schematic cross sectional view
showing the configuration of an impurity area of an element
isolation area in the embodiments of the invention;
[0043] FIGS. 16A and 16B are each a plan view of main components of
another embodiment of the invention;
[0044] FIG. 17 is a plan view for use for illustrating another
embodiment of the invention;
[0045] FIG. 18 is a cross sectional view for use for illustrating
still another embodiment of the invention;
[0046] FIGS. 19A and 19B are each a cross sectional view of main
components of still another embodiment of the invention;
[0047] FIG. 20 is a plan layout diagram of a solid-state imaging
device of a comparison example;
[0048] FIG. 21 is a cross sectional view of the solid-state imaging
device of FIG. 20 cut along a line A-A;
[0049] FIGS. 22A to 22C are each a first process diagram showing
the formation process of an insulation layer of an element
isolation area of the comparison example;
[0050] FIGS. 23D and 23E are each a second process diagram showing
the formation process of the insulation layer of the element
insulation area of the comparison example; and
[0051] FIG. 24 is a cross sectional view of main components of a
CMOS solid-state imaging device by previous STI.
[0052] FIG. 25 is a schematic diagram of an imaging apparatus with
an imaging part the present invention is applied.
DETAILED DESCRIPTION OF THE INVENTION
[0053] In the below, embodiments of the invention are described by
referring to the accompanying drawings.
[0054] FIGS. 1 to 2C show a solid-state imaging device of a first
embodiment of the invention. FIG. 1 shows a plan layout of main
components in a pixel area, and FIGS. 2A, 2B, and 2C are cross
sectional views of the solid-state imaging device of FIG. 1 cut
along a line A-A, a line B-B, and a line C-C, respectively.
[0055] A solid-state imaging device 61 of the first embodiment is
provided with a semiconductor substrate of a first conductive type,
e.g., n-type silicon substrate 62. This n-type silicon substrate 62
is formed with a semiconductor well area 63 of a second conductive
type, e.g., p-type. On the p-type semiconductor well area 63, a
photodiode PD and a unit pixel 64 configured by a plurality of
transistors are each plurally disposed two-dimensionally on a
regular basis. The photodiode PD serves as a photoelectric
conversion section. Between any two adjacent unit pixels 64 or in
each of the unit pixels 64, an element isolation area 65 is formed.
The element isolation area 65 serves as element isolation means
according to the invention.
[0056] The photodiode PD forms an HAD (Hall Accumulated Diode)
sensor, including a p-type semiconductor area of a second
conductive type, i.e., p+ accumulation layer 68, and an n-type
charge storage area 69 of a first conductive type. The p+
accumulation layer 68 is formed at an interface between the surface
of the silicon substrate and an insulation film 67. The n-type
charge storage area 69 is formed below the p+ accumulation layer
68, and stores therein a signal charge as a result of photoelectric
conversion.
[0057] The number of transistors configuring the pixel 64 varies,
and in this example, used are three MOS transistors, i.e., a
transfer transistor Tr1, a reset transistor Tr2, and an amplifying
transistor Tr3. The transfer transistor Tr1 is formed by the charge
storage area 69 of the photo diode PD, a source/drain area (drain
area in this example) 71 of an n-type, i.e., first conductive type,
and a transfer gate electrode 76. The n-type source/drain area 71
serves as a floating diffusion (FD), and the transfer gate
electrode 76 is formed via a gate insulation film 75. The reset
transistor Tr2 is formed by a pair of n-type source/drain areas
(source area in this example) 71, an n-type source/drain area
(drain area in this example) 72, and a reset gate electrode 77
formed via the gate insulation film 75. The amplifying transistor
Tr3 is formed by a pair of n-type source/drain areas (drain areas
in this example) 72, an n-type source/drain area (source area in
this example) 73, and an amplifying gate electrode 78 formed via
the gate insulation film 75.
[0058] FIG. 3 shows an equivalent circuit of the unit pixel 64. A
cathode (n area) of the photodiode PD is connected to a gate of the
amplifying transistor Tr3 via the transfer transistor Tr1. A node
electrically connected to the gate of the amplifying transistor Tr3
is referred to as floating diffusion (FD). The transfer transistor
Tr1 is connected between the photodiode PD and an FURO (FD). The
transfer transistor Tr1 is turned on when the gate thereof is
provided with a transfer pulse .phi.TRG via a transfer line 101,
and transfers the signal charge as a result of photoelectric
conversion by the photodiode PD to the floating diffusion (FD).
[0059] In the reset transistor Tr2, a drain is connected to a pixel
power supply Vdd1, and a source is connected to a floating
diffusion (FD). The reset transistor Tr2 is turned on when the gate
thereof is provided with a reset pulse .phi.RST via a reset line
102, and resets the floating diffusion (FD) by getting rid of the
electric charge of the floating diffusion (FD) to the pixel power
supply Vdd1. Such resetting is made prior to the transfer of the
signal charge from the photodiode PD to the floating diffusion
(FD).
[0060] In the amplifying transistor Tr3, a gate is connected to a
floating diffusion (FD), a drain is connected to a pixel power
supply Vdd2, and a source is connected to a vertical signal 103.
The amplifying transistor Tr3 forwards the potential of the
floating diffusion (FD) to the vertical signal line 103 as a reset
level. The potential to be forwarded is the one after the floating
diffusion is reset by the reset transistor Tr2. The amplifying
transistor Tr3 also forwards the potential of the floating
diffusion (FD) to the vertical signal line 103 as a signal level.
The potential to be forwarded is the one after the signal charge is
transferred by the transfer transistor Tr1.
[0061] When the pixel is driven, the pixel power supply Vdd1 is
affected and is switched between high and low in level, and the
drain of the amplifying transistor Tr3 changes.
[0062] In the embodiment, the element isolation area 65 is
configured by forming a p-type semiconductor area 81 inside of the
p-type semiconductor well area 63. The p-type semiconductor area 81
is of a conductive type opposite to the first conductive type of
the n-type source/drain areas 71 to 73 of the transistors. In this
embodiment, the p-type semiconductor area 81 is formed by a p+
semiconductor area 82, and a p semiconductor area 83. The p+
semiconductor area 82 is of a high concentration, and is formed on
the surface side of the semiconductor well area 63 with the
relatively shallow depth. The p semiconductor area 83 is formed
continuous to the p+ semiconductor area 82 with the depth needed
for element isolation. The element isolation area of the p
semiconductor area 81, i.e., the silicon substrate, is formed
thereon with an insulation film 84 whose thickness is similar to
that of the gate insulation film. The insulation film 84 on the
element isolation film 65 is formed substantially by a gate
insulation film 75 of the transistor. The element isolation area 65
is formed thereon with only the isolation film 84 equivalent to the
gate insulation film 75. After the gate electrode is removed, the
surface of the substrate carries thereon with only the gate
insulation film so that the surface is made flat entirely including
the active area of the transistor and the element isolation
area.
[0063] The impurity area 81 configuring the element isolation area
65 may take a configuration of FIG. 15A example, i.e., including
the p+ impurity area 82 and the p impurity area 83 narrower in
width than the area 82, a configuration of FIG. 15B example, i.e.,
including the p+ impurity area 82 and the p impurity area 83
sharing the same width, or a configuration of FIG. 15C, i.e.,
including only the p impurity area 83. The impurity area 81
configuring the element isolation area 65 may take a configuration
of FIG. 15D example or that of FIG. 15E example. The configuration
of the impurity area 81 of the element isolation area 65 is
similarly applicable to other embodiments that will be described
later.
[0064] The gate electrodes 76, 77, and 78 of the transistors Tr1,
Tr2, and Tr3, respectively, each include first and second sections
91 and 92. The first section 91 corresponds to a channel area being
an active area, and the second section 92 extends onto the
substrate in the vicinity of the channel area, i.e., onto the
element isolation area 65 in FIGS. 1 to 2C. As such, the substrate
below the gate electrode is formed thereon only with the gate
insulation film. In the drawing examples, the lower sections of the
gate electrodes [76 to 78] of the element isolation area 65 are
each formed by an insulation film, which is equivalent to the gate
insulation film. In the first embodiment, the second section 92 may
protrude a little from the gate electrode but is required to
protrude as will be described later.
[0065] In the first embodiment, as shown in FIG. 6A, a contact
section 88 that makes the gate electrodes [76 and 77] come in
contact with the wiring [101 and 102] (refer to FIG. 3) is formed
directly above the channel area. If with a solid-state imaging
device, the components, i.e., the amplifying transistor, the reset
transistor, and the transfer transistor, are basically analog.
Therefore, compared with other transistors with a peripheral
circuit, i.e., a so-called logic circuit, the gate electrodes of
the above components are wider in width, thereby allowing contact
with the gate electrodes directly above the channel. As shown in
FIG. 6B, the contact section 88 that makes the gate electrodes [76
and 77] come in contact with the wiring [101 and 102] can be formed
on the gate electrode protruding to the element isolation area
65.
[0066] With the contact section 88 formed directly above the
channel area for making the gate electrodes [76 and 77] come in
contact with the wiring [101 and 102], there is no more need for
the area of the gate electrode for use to form the contact section
outside of the channel, e.g., on the element isolation area 65.
Accordingly, the photodiode PD or others can be larger in area, and
the layout designing of the gate electrode becomes easier.
Moreover, the second section 92 of the gate electrode is not
required to protrude that much, thereby preventing the section from
serving as a parasitic MOS transistor.
[0067] In the gate electrodes [76 to 78], the first and second
sections 91 and 92 are made of different materials. That is, the
gate electrode is made of polysilicon or amorphous silicon, i.e.,
polysilicon in this example, and impurity implantation is changed
between the first and second sections 91 and 92. FIG. 7A to FIG.
10B show various types of examples. In the drawings, a reference
character S denotes a source area, a reference character D denotes
a drain area, and a reference numeral 65 denotes the element
isolation area.
[0068] For example, as shown in FIGS. 7A and 7B, the first section
91 of the gate electrode [76 to 78] is formed by polysilicon with
n-type impurity implantation, and the second section 92 is formed
by polysilicon with p-type impurity implantation, i.e., the first
section/the second section are of n-type/p-type.
[0069] Alternatively, as shown in FIGS. 8A and 8B, the first
section 91 is formed by polysilicon with p-type impurity
implantation, and the second section 92 is formed by polysilicon
with n-type impurity implantation, i.e., the first section/the
second section are of p-type/n-type.
[0070] Still alternatively, as shown in FIGS. 9A and 9B, the first
section 91 is formed by polysilicon with n-type impurity
implantation, and the second section 92 is formed by no-doped
polysilicon, i.e., the first section/the second section are of
n-type/no-doped.
[0071] Still alternatively, as shown in FIGS. 10A and 10B, the
first section 91 is formed by polysilicon with p-type impurity
implantation, and the second section 92 is formed by no-doped
polysilicon, i.e., the first section/the second section are of
p-type/no-doped.
[0072] With such an impurity distribution in the gate electrodes
[76 to 78], in any of the configurations of FIGS. 7A to 10B, when
the transistors are driven through application of a predetermined
gate electrode to the first section 91 formed directly above the
channel, no gate voltage is applied to the second section 92
extending to the portion in the vicinity of the channel, e.g., the
element isolation area 65. That is, in FIG. 7A to FIG. 8B examples,
because a pn junction is formed at the boundary between the first
and second sections 91 and 92, no gate voltage is applied to the
second section 92 even if the first section 91 is applied
therewith. In FIGS. 9A to 10B, the second section 92 is formed by
no-doped polysilicon, and thus is high in resistance, serving
substantially as insulator. Therefore, no gate voltage is applied
to the second section even if the first section 91 is applied
therewith. This thus prevents the formation of a parasitic MOS
transistor with the second section 92 serving as a parasitic gate.
With such a configuration, charge leaks are prevented from the
channel to the portion there around, i.e., element isolation area,
and the insulation film can be reduced in height between the gate
electrodes [76 to 78] and the element isolation area 65. This
insulation film can be formed only by a gate insulation film.
[0073] The first and second sections 91 and 92 are exemplarily
formed as below. That is, a polysilicon film is deposited by CVD
for patterning to a gate electrode pattern. As to the polysilicon
film, the first and second sections 91 and 92 are entirely
subjected to ion implantation of an n-type impurity, and then the
second section 92 and the element isolation area are selectively
subjected to ion implantation this time of a p-type impurity. This
p-type impurity has the concentration that cancels out that of the
n-type impurity. Alternatively, a polycrystalline silicon film may
be entirely subjected to ion implantation of a p-type impurity, and
then the second section 92 and the element isolation area may be
selectively subjected to ion implantation this time of an n-type
impurity. As a result, the first section 91 becomes conductive, and
the second section 92 is formed as a high-resistance area. If the
n-type and p-type impurities are of the same level, the impurities
are cancelled out each other, thereby forming a no-doped area.
[0074] At this time, the gate electrode has to be extended onto the
element isolation area even if a little. As shown in FIG. 14
example, considered here is a case with patterning displacements,
i.e., a polysilicon film 121 serving as a gate electrode is formed
more inward than end portions of a pair of n-type source/drain
areas 122 and 123. With this being the case, with ion implantation
of a p-type impurity, a p-type area 124 causes a short circuit
between a pair of source/drain areas 122 and 123, whereby the
transistor is not put into operation. In consideration thereof, the
polysilicon film 121 of the gate electrode is preferably formed to
protrude onto the element isolation area 65 even if a little.
[0075] Note that the length of the protrusion portion of the gate
electrode on the element isolation area may take a value that
allows the amount of a current leak at least between a pair of
source/drain areas after ion implantation of a p-type impurity, and
after various types of heat treatment. The recent study tells that
even if a leak current is observed slightly between the
source/drain areas 122 and 123 through the portion below the gate
electrode of the element isolation area, it is negligible for the
solid-state imaging device. That is, the solid-state imaging device
is provided with a correlated double sampling circuit (CDS circuit)
in a column signal processing circuit, and outputs a pixel signal
with a difference between a reset signal and a signal of signal
charge. Therefore, even with a slight leak current, the leak
current is cancelled out by subtraction, and thus causes no
effect.
[0076] In the above example of forming the first and second
sections 91 and 92, the p-type impurity is used to form the
boundary between the first and second sections of the gate
electrode. If the first section of the gate electrode is subjected
to ion implantation of a high-concentration n-type impurity for
formation of the source/drain area, the n-concentration is
increased to a further degree for the first section of the gate
electrode. As such, even if some mask displacement is observed when
the p-type impurity is used to form the boundary, ion implantation
of the n-type impurity to the source/drain area enables to
determine the channel width with accuracy.
[0077] As another example of forming the first and second sections
91 and 92, a no-doped polysilicon film is formed for patterning to
a pattern of the gate electrode. Ion implantation of an n-type
impurity is then performed to form the first section of the gate
electrode at the same time with the source/drain area. With this
method, there is no need to use the p-type impurity to form the
boundary between the first and second sections.
[0078] As shown in FIG. 16A, a section 81A in the vicinity of the
channel of the gate electrode 78 of the transistor Tr, i.e., the
element isolation area (hatched area by dotted lines), may be
subjected to ion implantation of a p-type impurity to be a
high-threshold-area. This is aimed for not to put the transistors
in operation. As shown in FIG. 16B, the section (element isolation
area) 81A in the vicinity of the channel of the gate electrode 78
may be configured to have an impurity concentration different from
that of a section 81B, which is a portion (element isolation
section) adjacent to the source S and the drain D, i.e., the
section 81A has a higher concentration than the section 81B.
[0079] As shown in FIG. 17, considered now is a case of forming the
impurity area 81 of the element isolation area 65 adjacent to the
channel below the gate electrode 78 of the transistor Tr. At the
time of such area formation, the impurity area 81 of the element
isolation area 65 may be sometimes formed away from the channel
area, i.e., so-called offset, due to mask displacement. Even if
this is the case, when the transistor Tr is turned off, a negative
voltage is applied to the gate electrode 78 so that a leak current
can be prevented from occurring in an offset section 210.
[0080] As shown in FIG. 11, a second-conductive-type impurity area
configuring the element isolation area 65, i.e., a p-type impurity
area in this example, can be formed by a first p-type impurity area
811 and a second p-type impurity area 812. The second p-type
impurity area 812 is formed inside of or adjacent to the first
p-type impurity area 811, and has a higher concentration than the
first p-type impurity area 811. To form the second p-type impurity
area 812, the first p-type impurity area 811 is formed first, and a
resist mask 85 is then formed on thus formed first p-type impurity
area 811. Thereafter, angled ion implantation of a p-type impurity
86 will do.
[0081] As such, not only the first p-type impurity area 811 but
also with the second p-type impurity area 812, element isolation
can be performed with higher reliability.
[0082] As shown in FIG. 12, the second p-type impurity area 812 can
be formed by angled ion implantation to the element isolation area
65 at least adjacent to the drain area of the transistor, i.e., the
first p-type impurity area 811. The second p-type impurity area 812
especially helps element isolation to be performed to the
drain-level-varying drain area with reliability. As an example, it
is preferable to form the second p-type impurity area 812 to the
element isolation area 65 adjacent to the drain area 71 of the
reset transistor Tr2. This is because the drain area 71 of the
reset transistor Tr2 is applied with the power supply voltage Vdd1
being high and low in level.
[0083] In FIG. 11 example, the first p-type impurity area 811 is
not necessarily provided. In either case where the first p-type
impurity area 811 is provided or not provided, the second p-type
impurity area 812 may be formed to enclose the n-type area 801
including the bottom portion.
[0084] Similarly to FIG. 12 example, the second p-type impurity
area 812 may be formed to enclose the source area 72 and the drain
area 71 including their bottom portions.
[0085] As shown in FIG. 13, the photodiode PD is preferably
configured with a thin silicon oxide film 89, in the drawing
example, a gate insulation film and an anti-reflective film
thereon, e.g., silicon nitride film 90. The silicon nitride film 90
is preferably formed thin to derive a better sensitivity for blue,
and may be 1 to 10 nm in thickness, e.g., 5 nm. This
anti-reflective film allows light to enter the photodiode PD with
good efficiency.
[0086] According to the solid-state imaging device 61 of the first
embodiment, an element isolation area below a gate electrode of at
least any one of transistors Tr1, Tr2, and Tr3 in the pixel 64 is
formed thereon only with the insulation film 84, i.e.,
substantially the gate insulation film, having the same thickness
as the gate insulation film 75. In such a configuration, no
insulation film is embedded like the previous STI configuration so
that no dark current is caused by any defect due to selective
etching.
[0087] With the previously-proposed diffusion layer isolation area,
a thick insulation film is formed on the surface. Therefore, if a
gate electrode is formed to extend onto the resulting element
isolation area, there is a possibility that a polysilicon material
used to form a gate electrode may be left on the portion of the
thick insulation film. Further, the configuration will become
complicated to deal with the smaller device size, e.g., the gate
electrode is formed on the insulation film. In this embodiment, on
the other hand, substantially the same gate insulation film covers
also the element isolation area. Accordingly, no polysilicon
material is left on the insulation film even after the gate
electrode is formed, and the gate electrode is formed flat. This
thus does not complicate but rather simplifies the surface
configuration in the course of size reduction.
[0088] The element isolation area 65 is formed by the p-type
impurity area 81 whose conductive type is opposite to that of the
source/drain area of the transistor. This thus helps to prevent,
without fail, a charge leak to adjacent pixels even if the element
isolation area 65 is formed thereon only with the gate insulation
film. What is better, element isolation on the p-type impurity area
causes no etching damage like with STI or element isolation with a
thick insulation film involved, thereby preventing generation of
dark currents and white spots. The surface of the element isolation
area 64 is high in concentration, and thus formation of a
substantial parasitic MOS transistor is prevented even if the gate
electrode is extended onto the element isolation area 65.
[0089] The p-type impurity area 81 is formed at least in the
vicinity of the channel area of the transistor, i.e., the element
isolation area. With such a configuration, no current flows in the
vicinity of the channel area when the gate electrode of the
transistor is changed in potential.
[0090] As shown in FIGS. 7A to 10B, in the gate electrodes (76, 77,
and 78), ion implantation to the first section 91 directly above
the channel, and the portion in the vicinity of the channel, i.e.,
the second section 92 on the element isolation area 65, may be
performed with an impurity combination of n-type/p-type,
p-type/n-type, n-type/no-doped, or p-type/no-doped, i.e., impurity
distribution for the first section/the second section. This
favorably achieves no gate voltage application to the element
isolation area 65 even if the transistors are driven, and prevents
a charge leak from the channel area to the element isolation area.
This also reduces the height of the insulation film between the
gate and the substrate, i.e., between the gate and the element
isolation area, and makes the insulation film have the same
thickness as the gate insulation film.
[0091] As shown in FIG. 11, as the p-type impurity area 81
configuring the element isolation area 65, in addition to the first
p-type impurity area 811, the second p-type impurity area 812 is
formed inside of or adjacent to the first p-type impurity area 811.
Such a second p-type impurity area 812 helps to perform element
isolation with more reliability.
[0092] As shown in FIG. 12, the second p-type impurity area 812 is
formed to the element isolation area 65 adjacent to at least the
transistor, i.e., the drain area 71 of the reset transistor Tr2 in
this example. With such a configuration, isolation can be performed
with reliability to the drain area in which the drain voltage,
i.e., power supply voltage Vdd1, varies in level.
[0093] As shown in FIG. 6A, the contact section 88 making the gate
electrode of the transistor come in contact with the wiring is
formed directly above the channel area. With such a configuration,
there is no more need for the area of the extension section of the
gate electrode for use to form the contact section outside of the
channel area. Accordingly, the light-receiving area of the
photodiode PD can be increased so that the sensitivity increase can
be achieved.
[0094] FIGS. 4 to 5C show a second embodiment of the solid-state
imaging device of the embodiment of the invention. FIG. 4 is a plan
layout diagram of main components of a pixel area, and FIGS. 5A to
5C are cross sectional views of the solid-state imaging device of
FIG. 4 cut along a line A-A, a line B-B, and a line C-C,
respectively.
[0095] A solid-state imaging device 94 of the second embodiment is
similar to that in the first embodiment, except that the gate
electrodes 76, 77, and 78 of the transistors Tr1, Tr2, and Tr3 have
different patterns for plan layouts.
[0096] In the solid-state imaging device 94 of the second
embodiment, the gate electrodes 76, 77, and 78 of the transistors
Tr1, Tr2, and Tr3 are each partially extending onto the element
isolation area 65 from directly above the channel area. The
sections of the gate electrodes 76, 77, and 78, i.e., extension
sections 76a, 77a, and 78a, form the contact section 88 that
establishes a contact between the gate electrodes and wiring. In
this example, the gate electrodes [76 to 78] and their extension
sections [76a to 78a] are subjected to the implantation of impurity
of the same conductive type, thereby being formed by a piece of
conductive film. FIG. 6C is showing the contact section 88 that
establishes a contact between the gate electrode 78 of the
amplifying transistor Tr3 and wiring, for example.
[0097] The remaining configuration is similar to that of the first
embodiment, and thus is not described again.
[0098] In the solid-state imaging device 94 of the second
embodiment, as shown in FIG. 6B, the contact section 88 between the
gate electrode and the wiring is formed to the extension section
78a of the gate electrode 78 that is an extension portion on the
gate electrode in the vicinity of the channel area, i.e., element
isolation area 65. The contact section 88 formed as such serves
well not to affect the channel area even if any damage occurs at
the time of forming the contact section. When there is any
possibility of causing damage to the substrate at the time of
forming the contact section, if the channel area is removed before
contact establishing, the channel area can be protected from damage
suffering.
[0099] Other effects, similarly in the first embodiment, include
simplification of configuration, suppression of white spots and
dark currents, prevention of parasitic MOS transistor formation,
more reliable element isolation, and others.
[0100] As shown in FIG. 21, in the configuration of including a
thick insulation film on an element isolation area, a gate
electrode is formed on the insulation film. With such a
configuration, when the device is reduced in size, there may be no
enough space to establish a contact to the extension section
corresponding to the element isolation area of the gate electrode.
In the second embodiment, however, the gate electrode of the
element isolation area is formed therebelow only with the gate
insulation film, and the extension section of the gate electrode is
formed flat. As such, even if the device is reduced in size, this
extension section helps establish such a contact with ease.
[0101] Note that, in FIG. 5, the p semiconductor area 83 may not be
necessarily provided in the element isolation area 65. If the p
semiconductor area 83 is to be provided, the p-type area may be
formed with the concentration of a level not to allow punch
through. The p-type impurity at this time is controlled through ion
implantation separately from the p-type semiconductor well area 63.
This is applicable also to the configuration of FIG. 3.
[0102] As another exemplary configuration of the invention, in the
embodiments described above, a pixel drive element, e.g.,
peripheral circuit, is provided outside of an imaging area that is
formed with a plurality of pixels. The element isolation area of
the pixel drive element is configured with an insulation film,
which is different from the gate insulation film, below the gate
electrode in the vicinity of the channel of the transistor.
[0103] According to this embodiment, with such a configuration of
including an insulation film separately from the gate insulation
film in the area for forming the pixel drive element, the element
isolation can be performed with more reliability. What is more, by
performing element isolation with the configuration of not
including such a separately-formed insulation film but
substantially only a gate insulation film below the gate electrode
in the vicinity of the channel, many improvements can be achieved,
i.e., contribute to correct any deficiency of the separately-formed
isolation film caused by imaging areas with a higher pixel count,
and by device size reduction. What is better, the configuration is
less bumpy, thereby enabling to establish a contact with any flat
electrode with ease. The area restrictions so far imposed on the
contact section are thus reduced so that the space in the pixel can
be effectively used.
[0104] As another exemplary embodiment of the invention, FIG. 18
shows the cross sectional configuration of the gate electrode 78 of
FIG. 6A, 6B, or 6C along the channel width direction. The gate
electrode 78 is formed via the gate insulation film 75 in such a
manner as to extend from the channel area (channel width) of the p
well area 63 onto the p+ impurity area of the element isolation
area. In FIG. 18, an area A corresponds to a channel area, and an
area B corresponds to the element isolation area 65. At the time of
such electrode formation, the area B (transistor) corresponding to
the element isolation area 65 can be configured with a threshold
value Vt2 higher than a threshold value Vt1 of the area A
(transistor) corresponding to the channel area. If with such a
configuration, the transistor of the area B barely exists because
the performance capability thereof is lower than that of the
transistor of the area A. As such, no substantial parasitic MOS
transistor is formed.
[0105] FIGS. 19A and 19B show still another embodiment of the
invention. In this embodiment, an element isolation area is so
configured as to include two impurity areas 205, which are formed
by ion implantation from the side of two to-be-separated elements.
That is, in FIGS. 19A and 19B, as the pixel is reduced in size, the
channel length S directly below a gate electrode 201 of the
transistor Tr1 is shorten. Therefore, the channel section adjacent
to a source area 202 and a drain area 203 is formed with, locally,
a p layer by angled ion implantation. With the same process as
forming the p layer 204 by such angled ion implantation, two p
areas 205 are formed to the element isolation area 65 by angled ion
implantation via a resist mask 206. This thus prevents punch
through between the source and the drain, and the element isolation
area 65 can be formed with a narrower element isolation width d
similarly to the channel lengths of the transistor Tr. As such, the
size-reduced element isolation area 65 can be formed in a manner
corresponding to the size reduction of the transistor.
[0106] The solid-state imaging device of the gate electrode
configuration of FIGS. 7 to 10, i.e., of the impurity combination
for implantation to the first section/the second section of the
gate electrode, can be applied to other solid-state imaging devices
with STI adopted for element isolation. As such, element isolation
with STI can derive resistance with respect to Vg-Id
characteristics (kink).
[0107] As still another embodiment of the invention, two or more
impurity areas of p-type, n-type, or no-doped are formed in any one
specific gate electrode, and in the electrode configuration forming
a contact section to a first section corresponding on the channel
section, the impurity areas are electrically connected to any
boundary section of the areas (no-doped including), e.g., not to
include metal silicide, metal, or any other conductive layers. That
is, when a gate voltage of any needed level is applied to the gate
electrode corresponding to the channel section, no gate voltage is
applied to the gate electrode corresponding to the section in the
vicinity of the channel, i.e., element isolation area.
[0108] In the above embodiments, the invention is applied to a
solid-state imaging device in which a pixel is configured by a
photodiode and three transistors. The number of the MOS transistors
configuring a pixel in the solid-state imaging device is not
restrictive to three, and any number will do as required, e.g.,
four transistors. The invention is also applicable to a solid-state
imaging device in which the transistors, e.g., reset transistor and
amplifying transistor, or with a selection transistor if with
4-transistor configuration, are shared by a plurality of
photodiodes.
[0109] The solid-state imaging device of the present invention is
mounted in an imaging apparatus described in FIG. 25 like an
electronic still camera, a cell phone or an FA (Factory Automation)
camera. Implementation of the present invention in the device of
the imaging apparatus leads to the improvements of the imaging
quality of the imaging apparatus.
[0110] The solid-state imaging device of the present invention may
be provided as an imaging module device in which a drive control
circuit, a peripheral signal processing circuit or a power supply
circuit is also installed.
[0111] It should be understood by those skilled in the art that
various modifications, combinations, sub-combinations and
alterations may occur depending on design requirements and other
factors insofar as they are within the scope of the appended claims
or the equivalents thereof.
* * * * *