U.S. patent application number 15/478419 was filed with the patent office on 2018-05-17 for composite magnetic sealing material and electronic circuit package using the same.
This patent application is currently assigned to TDK Corporation. The applicant listed for this patent is TDK Corporation. Invention is credited to Kenichi KAWABATA.
Application Number | 20180138131 15/478419 |
Document ID | / |
Family ID | 62090654 |
Filed Date | 2018-05-17 |
United States Patent
Application |
20180138131 |
Kind Code |
A1 |
KAWABATA; Kenichi |
May 17, 2018 |
COMPOSITE MAGNETIC SEALING MATERIAL AND ELECTRONIC CIRCUIT PACKAGE
USING THE SAME
Abstract
Disclosed herein is a composite magnetic sealing material
includes a resin material and a filler blended in the resin
material in a blend ratio of 50 vol. % or more and 85 vol. % or
less. The filler includes a first magnetic filler containing Fe and
32 wt. % or more and 39 wt. % or less of a metal material composed
mainly of Ni, the first magnetic filler having a first grain size
distribution, and a second magnetic filler having a second grain
size distribution different from the first grain size
distribution.
Inventors: |
KAWABATA; Kenichi; (TOKYO,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TDK Corporation |
TOKYO |
|
JP |
|
|
Assignee: |
TDK Corporation
TOKYO
JP
|
Family ID: |
62090654 |
Appl. No.: |
15/478419 |
Filed: |
April 4, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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15352872 |
Nov 16, 2016 |
9881877 |
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15478419 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01F 1/14708 20130101;
H01F 1/37 20130101; H01F 1/26 20130101; H01L 25/16 20130101; H01L
21/561 20130101; H01F 10/14 20130101; H01L 2924/181 20130101; H01L
2224/16225 20130101; H01L 23/295 20130101; H01L 23/3121 20130101;
H01L 23/552 20130101; H01L 2924/19105 20130101; H01L 2924/00012
20130101; H01L 25/50 20130101; H01L 2924/181 20130101; H01L 2224/97
20130101; H01L 21/563 20130101; H01L 21/565 20130101 |
International
Class: |
H01L 23/552 20060101
H01L023/552; H01L 23/29 20060101 H01L023/29; H01L 25/16 20060101
H01L025/16; H01L 25/00 20060101 H01L025/00; H01L 21/56 20060101
H01L021/56; H01F 1/147 20060101 H01F001/147 |
Claims
1. A composite magnetic sealing material comprising: a resin
material; and a filler blended in the resin material in a blend
ratio of 50 vol. % or more and 85 vol. % or less, wherein the
filler includes: a first magnetic filler containing Fe and 32 wt. %
or more and 39 wt. % or less of a metal material composed mainly of
Ni, the first magnetic filler having a first grain size
distribution; and a second magnetic filler having a second grain
size distribution different from the first grain size
distribution.
2. The composite magnetic sealing material as claimed in claim 1,
wherein the metal material further contains 0.1 wt. % or more and 5
wt. % or less of Co relative to a total weight of the first
magnetic filler.
3. The composite magnetic sealing material as claimed in claim 1,
wherein a median diameter (D50) of the first magnetic filler is
larger than a median diameter (D50) of the second magnetic
filler.
4. The composite magnetic sealing material as claimed in claim 3,
wherein the second magnetic filler contains at least one selected
from a group consisting of Fe, an Fe--Co based alloy, an Fe--Ni
based alloy, an Fe--Al based alloy, an Fe--Si based alloy, an
Ni--Zn based spinel ferrite, an Mn--Zn based spinel ferrite, an
Ni--Cu--Zn based spinel ferrite, an Mg based spinel ferrite, and an
yttrium-iron based garnet ferrite.
5. The composite magnetic sealing material as claimed in claim 3,
wherein the second magnetic filler has substantially a same
composition as that of the first magnetic filler.
6. The composite magnetic sealing material as claimed in claim 1,
wherein the filler further includes a non-magnetic filler.
7. The composite magnetic sealing material as claimed in claim 6,
wherein a ratio of an amount of the non-magnetic filler relative to
a sum of an amounts of the first and second magnetic fillers and
the non-magnetic filler is 1 vol. % or more and 30 vol. % or
less.
8. The composite magnetic sealing material as claimed in claim 7,
wherein the non-magnetic filler contains at least one material
selected from a group consisting of SiO.sub.2, a low thermal
expansion crystallized glass (lithium aluminosilicate based
crystallized glass), ZrW.sub.2O.sub.8, (ZrO).sub.2P.sub.2O.sub.7,
KZr.sub.2(PO.sub.4).sub.3, or Zr.sub.2(WO.sub.4)
(PO.sub.4).sub.2.
9. The composite magnetic sealing material as claimed in claim 1,
wherein the first and second magnetic fillers have a substantially
spherical shape.
10. The composite magnetic sealing material as claimed in claim 1,
wherein the first and second magnetic fillers are coated with an
insulating material.
11. The composite magnetic sealing material as claimed in claim 10,
wherein a film thickness of the insulating material is 10 nm or
more.
12. The composite magnetic sealing material as claimed in claim 1,
wherein the resin material comprises a thermosetting resin
material.
13. The composite magnetic sealing material as claimed in claim 12,
wherein the thermosetting resin material contains at least one
material selected from a group consisting of an epoxy resin, a
phenol resin, a urethane resin, a silicone resin, or an imide
resin.
14. The composite magnetic sealing material as claimed in claim 1,
wherein a volume resistivity of the composite magnetic sealing
material is 10.sup.10 .OMEGA.cm or more.
15. An electronic circuit package comprising: a substrate; an
electronic component mounted on a surface of the substrate; and a
magnetic mold resin covering the surface of the substrate so as to
embed therein the electronic component, wherein the magnetic mold
resin comprising: a resin material; and a filler blended in the
resin material in a blend ratio of 50 vol. % or more and 85 vol. %
or less, and wherein the filler includes: a first magnetic filler
containing Fe and 32 wt. % or more and 39 wt. % or less of a metal
material composed mainly of Ni, the first magnetic filler having a
first grain size distribution; and a second magnetic filler having
a second grain size distribution different from the first grain
size distribution.
16. The electronic circuit package as claimed in claim 15, wherein
a surface resistance value of the magnetic mold resin is
10.sup.6.OMEGA. or more.
17. The electronic circuit package as claimed in claim 15, further
comprising a metal film covering the magnetic mold resin, wherein
the metal film is connected to a power supply pattern provided in
the substrate.
18. The electronic circuit package as claimed in claim 17, wherein
the metal film is mainly composed of at least one metal selected
from a group consisting of Au, Ag, Cu, and Al.
19. The electronic circuit package as claimed in claim 17, wherein
a surface of the metal film is covered with an antioxidant
film.
20. The electronic circuit package as claimed in claim 17, further
comprising a soft magnetic metal film that covers the magnetic mold
resin.
21. The electronic circuit package as claimed in claim 15, further
comprising a soft magnetic metal film that covers the magnetic mold
resin, wherein the soft magnetic metal film is connected to a power
supply pattern provided in the substrate.
22. The electronic circuit package as claimed in claim 21, wherein
the soft magnetic metal film comprises Fe or Fe--Ni based
alloy.
23. The electronic circuit package as claimed in claim 21, wherein
a surface of the soft magnetic metal film is covered with an
antioxidant film.
Description
BACKGROUND OF THE INVENTION
Field of the Invention
[0001] The present invention relates to a composite magnetic
sealing material and an electronic circuit package using the
composite magnetic material as a mold material and, more
particularly to a composite magnetic sealing material suitably used
as a mold material for an electronic circuit package and an
electronic circuit package using the composite magnetic sealing
material as a mold material.
Description of Related Art
[0002] In recent years, an electronic device such as a smartphone
is equipped with a high-performance radio communication circuit and
a high-performance digital chip, and an operating frequency of a
semiconductor IC used therein tends to increase. Further, adoption
of an SIP (System-In Package) having a 2.5D or 3D structure, in
which a plurality of semiconductor ICs are connected by a shortest
wiring, is accelerated, and modularization of a power supply system
is expected to accelerate. Further, an electronic circuit module
having a large number of modulated electronic components
(collective term of components, such as passive components (an
inductor, a capacitor, a resistor, a filter, etc.), active
components (a transistor, a diode, etc.), integrated circuit
components (an semiconductor IC, etc.) and other components
required for electronic circuit configuration) is expected to
become more and more popular, and an electronic circuit package
which is a collective term for the above SIP, electronic circuit
module, and the like tends to be mounted in high density along with
sophistication, miniaturization, and thinning of an electronic
device such as a smartphone. However, this tendency poses a problem
of malfunction and radio disturbance due to noise. The problem of
malfunction and radio disturbance is difficult to be solved by
conventional noise countermeasure techniques. Thus, recently,
self-shielding of the electronic circuit package has become
accelerated, and an electromagnetic shielding using a conductive
paste or a plating or sputtering method has been proposed and put
into practical use, and higher shielding characteristics are
required in the future.
[0003] To achieve this, recently, there are proposed electronic
circuit packages in which a molding material itself has magnetic
shielding characteristics. For example, Japanese Patent Application
Laid-Open No. H10-64714 discloses a composite magnetic sealing
material added with soft magnetic powder having an oxide film as a
molding material for electronic circuit package.
[0004] However, conventional composite magnetic sealing materials
have a drawback in that it has a large thermal expansion
coefficient. Thus, a mismatch occurs between a composite magnetic
sealing material and a package substrate or electronic components
in terms of the thermal expansion coefficient. As a result, an
aggregated substrate having a strip shape after molding may be
greatly warped, or there may occur a warp large enough to cause a
problem with connectivity of an electronic circuit package in a
diced state in mounting reflow. This phenomenon will be described
in detail below.
[0005] In recent years, various structures have been proposed for
and actually put into practical use as a semiconductor package or
an electronic component module, and, currently, there is generally
adopted a structure in which electronic components such as
semiconductor ICs are mounted on an organic multilayer substrate,
followed by molding of the upper portion and periphery of the
electronic component package by a resin sealing material. A
semiconductor package or electronic component module having such a
structure is molded as an aggregated substrate, followed by
dicing.
[0006] In this structure, an organic multilayer substrate and a
resin sealing material having different physical properties
constitute a so-called bimetal, so that a warp may occur due to the
difference between thermal expansion coefficients, glass
transition, or curing shrinkage of a molding material. To suppress
the warp, it is necessary to make the physical properties such as
thermal expansion coefficients coincide with each other as much as
possible. In recent years, an organic multilayer substrate used for
a semiconductor package or an electronic circuit module is getting
thinner and thinner and is increasing in the number of layers
thereof to meet requirements for height reduction. In order to
realize high rigidity and low thermal expansion for ensuring good
handleability of a thin substrate while achieving the thickness
reduction and multilayer structure, use of a substrate material
having a high glass transition temperature, addition of a filler
having a small thermal expansion coefficient to a substrate
material, or use of glass cloth having a smaller thermal expansion
coefficient is a common practice at present.
[0007] On the other hand, the difference in physical properties
between semiconductor ICs and electronic components mounted on a
substrate and a molding material also generates a stress, causing
various problems such as interfacial delamination of the molding
material and crack of the electronic components or molding
material. Incidentally, silicon is used as the semiconductor ICs.
The thermal expansion coefficient of silicon is 3.5 ppm/.degree.
C., and that of a baked chip component such as a ceramic capacitor
or an inductor is about 10 ppm/.degree. C.
[0008] Thus, the molding material is also required to have a small
thermal expansion coefficient, and some commercially-available
materials have a thermal expansion coefficient below 10
ppm/.degree. C. As a method for reducing the thermal expansion
coefficient of the molding material, adopting an epoxy resin having
a small thermal expansion coefficient, as well as, blending fused
silica having a very small thermal expansion coefficient of 0.5
ppm/.degree. C. in a sealing resin at a high filling rate can be
taken.
[0009] General magnetic materials have a high thermal expansion
coefficient. Thus, as described in Japanese Patent Application
Laid-Open No. H10-64714, the composite magnetic sealing material
obtained by adding general soft magnetic powder to a mold resin
cannot achieve a target small thermal expansion coefficient.
SUMMARY
[0010] It is therefore an object of the present invention to
provide a composite magnetic shield material having a low thermal
expansion coefficient.
[0011] Another object of the present invention is to provide an
electronic circuit package using the composite magnetic shield
material having a low thermal expansion coefficient as a mold
material.
[0012] A composite magnetic sealing material according to the
present invention includes a resin material and a filler blended in
the resin material in a blend ratio of 50 vol. % to 85 vol. %. The
filler includes a first magnetic filler containing a 32 wt. % to 39
wt. % of metal material composed mainly of Ni in Fe and having a
first grain size distribution and a second magnetic filler having a
second grain size distribution different from the first grain size
distribution.
[0013] According to the present invention, by using the first
magnetic filler having a small thermal expansion coefficient, the
thermal expansion coefficient of the composite magnetic sealing
material can be reduced. In addition, by using the second magnetic
filler having a second grain size distribution different from the
first grain size distribution, a magnetic material can be packed at
a higher density. Thus, when the composite magnetic sealing
material according to the present invention is used as a mold
material for an electronic circuit package, it is possible to
reduce the warp of the substrate and the mold package and to
prevent interfacial delamination among the mold material,
substrate, and mounted components (ICs, passive components, and the
like) and crack of the mold material due to mismatch of the thermal
expansion coefficient, while ensuring high magnetic
characteristics.
[0014] In the present invention, the metal material may further
contain 0.1 wt. % or more and 5 wt. % or less of Co relative to the
total weight of the first magnetic filler. This enables a further
reduction in the thermal expansion coefficient of the composite
magnetic sealing material.
[0015] In the present invention, the median diameter (D50) of the
first magnetic filler is preferably larger than the median diameter
(D50) of the second magnetic filler. This allows the thermal
expansion coefficient to be sufficiently reduced while ensuring
high magnetic characteristics.
[0016] In the present invention, the second magnetic filler
preferably contains at least one selected from the group consisting
of Fe, an Fe--Co based alloy, an Fe--Ni based alloy, an Fe--Al
based alloy, an Fe--Si based alloy, an Ni--Zn based spinel ferrite,
an Mn--Zn based spinel ferrite, an Ni--Cu--Zn based spinel ferrite,
an Mg based spinel ferrite, and an yttrium-iron based garnet
ferrite. This is because the above magnetic materials each have
high magnetic characteristics. Alternatively, the second magnetic
filler may have substantially the same composition as that of the
first magnetic filler.
[0017] In the present invention, the filler may further include a
non-magnetic filler. This enables a further reduction in the
thermal expansion coefficient of the composite magnetic sealing
material. In this case, the ratio of the amount of the non-magnetic
filler relative to the sum of the amounts of the magnetic filler
and the non-magnetic filler is preferably 1 vol. % or more and 30
vol. % or less. This enables a further reduction in the thermal
expansion coefficient of the composite magnetic sealing material
while ensuring sufficient magnetic characteristics. In this case,
the non-magnetic filler preferably contains at least one material
selected from the group consisting of SiO.sub.2, a low thermal
expansion crystallized glass (lithium aluminosilicate based
crystallized glass), ZrW.sub.2O.sub.8, (ZrO).sub.2P.sub.2O.sub.7,
KZr.sub.2(PO.sub.4).sub.3, or Zr.sub.2(WO.sub.4) (PO.sub.4).sub.2.
These materials have a very small or negative thermal expansion
coefficient, thus enabling a further reduction in the thermal
expansion coefficient of the composite magnetic sealing
material.
[0018] In the present invention, the first and second magnetic
fillers preferably have a substantially spherical shape. This
enables an increase in the ratio of the first and second magnetic
fillers to the composite magnetic sealing material.
[0019] In the present invention, the surface of the first and
second magnetic fillers is preferably insulatively coated, and the
film thickness of the insulating coating is preferably 10 nm or
more. With this configuration, the volume resistivity of the
composite magnetic sealing material can be increased to, e.g.,
10.sup.10 .OMEGA.cm or more, making it possible to ensure
insulating performance required for a molding material for an
electronic circuit package.
[0020] In the present invention, the resin material is preferably a
thermosetting resin material, and the thermosetting resin material
preferably contains at least one material selected from the group
consisting of an epoxy resin, a phenol resin, a urethane resin, a
silicone resin, or an imide resin.
[0021] As described above, the composite magnetic sealing material
according to the present invention has a small thermal expansion
coefficient and high magnetic characteristics, so that when it is
used as a mold material for an electronic circuit package, it is
possible to prevent the warp of the substrate, interfacial
delamination of the mold material, crack of the mold material, and
the like while ensuring a high magnetic shield effect.
[0022] An electronic circuit package according to the present
invention includes a substrate, electronic components mounted on
the surface of the substrate, and a magnetic mold resin covering
the surface of the substrate so as to embed therein the electronic
components. The magnetic mold resin includes a resin material and a
filler blended in the resin material in a blend ratio of 50 vol. %
to 85 vol. %. The filler includes a first magnetic filler
containing a 32 wt. % to 39 wt. % of metal material composed mainly
of Ni in Fe and having a first grain size distribution and a second
magnetic filler having a second grain size distribution different
from the first grain size distribution.
[0023] According to the present invention, by using the first
magnetic filler having a small thermal expansion coefficient, the
thermal expansion coefficient of the magnetic mold resin made of a
composite magnetic sealing material can be reduced. In addition,
the magnetic mold resin further includes the second magnetic filler
having a grain size distribution different from that of the first
magnetic filler, so that a magnetic material can be packed at a
higher density. Thus, it is possible to prevent the warp of the
substrate, interfacial delamination of the mold material, crack of
the mold material, and the like while ensuring a high magnetic
shield effect.
[0024] In the present invention, the surface resistance value of
the magnetic mold resin is preferably 10.sup.6.OMEGA. or more. With
this configuration, even when the magnetic mold resin is covered
with a metal film, an eddy current to be generated when
electromagnetic wave noise enters a metal film hardly flows into
the mold resin, making it possible to prevent deterioration in the
magnetic characteristics of the magnetic mold resin due to inflow
of the eddy current.
[0025] It is preferable that the electronic circuit package further
includes a metal film covering the magnetic mold resin, wherein the
metal film is connected to a power supply pattern provided in the
substrate. With this configuration, a composite shielding structure
having both an electromagnetic shielding function and a magnetic
shielding function can be obtained.
[0026] Preferably, in the present invention, the metal film is
mainly composed of at least one metal selected from a group
consisting of Au, Ag, Cu, and Al, and more preferably, the surface
of the metal film is covered with an antioxidant film. In the
present invention, it is preferable that the power supply pattern
is exposed to a side surface of the substrate and that the metal
film contacts the exposed power supply pattern. With this
configuration, it is possible to easily and reliably connect the
metal film to the power supply pattern.
[0027] The electronic circuit package according to the present
invention may further include a soft magnetic metal film that
covers the magnetic mold resin. With this configuration, a double
magnetic shield structure can be attained, allowing higher magnetic
characteristics to be obtained.
[0028] The electronic circuit package according to the present
invention may be connected to a power supply pattern mounted on the
substrate and may further includes a soft magnetic metal film that
covers the magnetic mold resin. With this configuration, it is
possible to obtain a composite shield structure having both an
electromagnetic shield function and a magnetic shield function and
to obtain higher magnetic characteristics. In this case, the soft
magnetic metal film is preferably made of Fe or an Fe--Ni based
alloy. With this configuration, high magnetic characteristics and
high conductivity can be imparted to the soft magnetic metal film
itself.
[0029] As described above, the electronic circuit package according
to the present invention uses a magnetic mold resin having a small
thermal expansion coefficient and high magnetic characteristics as
a mold resin, so that it is possible to reduce the warp of the
substrate and the package and to prevent interfacial delamination
of the mold material and crack of the mold material due to mismatch
of the thermal expansion coefficient, while ensuring high magnetic
shielding characteristics.
BRIEF DESCRIPTION OF THE DRAWINGS
[0030] The above features and advantages of the present invention
will be more apparent from the following description of certain
preferred embodiments taken in conjunction with the accompanying
drawings, in which:
[0031] FIG. 1 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a first
embodiment of the present invention;
[0032] FIG. 2 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a first
modification of the first embodiment;
[0033] FIGS. 3 to 5 are process views for explaining a
manufacturing method for the electronic circuit package shown in
FIG. 1;
[0034] FIG. 6 is a schematic view for explaining a configuration of
a composite magnetic sealing material;
[0035] FIG. 7 is a graph illustrating the relationship between the
Ni ratio of the first magnetic filler and the thermal expansion
coefficient and the magnetic permeability of the composite magnetic
sealing material;
[0036] FIG. 8 is a graph illustrating the relationship between the
Ni ratio of the first magnetic filler and the thermal expansion
coefficient of the composite magnetic sealing material;
[0037] FIG. 9 is a graph illustrating the relationship between the
Ni ratio of the first magnetic filler and the magnetic permeability
of the composite magnetic sealing material;
[0038] FIG. 10 is a graph illustrating the relationship between the
Co ratio of the first magnetic filler and the thermal expansion
coefficient and magnetic permeability of the composite magnetic
sealing material;
[0039] FIG. 11 is a graph illustrating the relationship between the
additive ratio of the non-magnetic filler and the thermal expansion
coefficient of the composite magnetic sealing material;
[0040] FIG. 12 is a graph illustrating the relationship between the
presence/absence of the insulating coat formed on the surface of
the first magnetic filler and volume resistivity;
[0041] FIG. 13 is a graph illustrating the relationship between the
film thickness of the insulating coat formed on the surface of the
first magnetic filler and volume resistivity;
[0042] FIG. 14 is a graph illustrating the relationship between
volume resistivity of the first magnetic filler and that of the
composite magnetic sealing material;
[0043] FIG. 15 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a
second embodiment of the present invention;
[0044] FIGS. 16 to 18 are process views for explaining a
manufacturing method for the electronic circuit package shown in
FIG. 15;
[0045] FIG. 19 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a third
embodiment of the present invention;
[0046] FIG. 20 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a first
modification of the third embodiment;
[0047] FIG. 21 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a
second modification of the third embodiment;
[0048] FIG. 22 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a third
modification of the third embodiment;
[0049] FIG. 23 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a
fourth modification of the third embodiment;
[0050] FIG. 24 is a graph illustrating noise attenuation in the
electronic circuit package shown in FIG. 19;
[0051] FIGS. 25 to 27 are graphs each illustrating the relationship
between the film thickness of the metal film included in the
electronic circuit package shown in FIG. 19 and noise
attenuation;
[0052] FIG. 28 is graphs illustrating the warp amount of the
substrate during temperature rising and that during temperature
dropping in the electronic circuit packages shown in FIGS. 1 and
19;
[0053] FIG. 29 is graphs illustrating the warp amount of the
substrate during temperature rising and that during temperature
dropping in the electronic circuit packages of a comparative
example;
[0054] FIG. 30 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a
fourth embodiment of the present invention;
[0055] FIG. 31 is a process view for explaining a manufacturing
method for the electronic circuit package shown in FIG. 30;
[0056] FIG. 32 is a process view for explaining a manufacturing
method for the electronic circuit package shown in FIG. 30;
[0057] FIGS. 33 and 34 are graphs indicating a grain size
distribution of the first and second magnetic fillers and the
non-magnetic filler;
[0058] FIG. 35 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a fifth
embodiment of the present invention;
[0059] FIG. 36 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a
modification of the fifth embodiment;
[0060] FIG. 37 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a sixth
embodiment of the present invention;
[0061] FIG. 38 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a
modification of the sixth embodiment;
[0062] FIG. 39 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a
seventh embodiment of the present invention;
[0063] FIG. 40 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to a
modification of the seventh embodiment; and
[0064] FIG. 41 is a cross-sectional view illustrating a
configuration of an electronic circuit package according to an
eighth embodiment of the present invention.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0065] Preferred embodiments of the present invention will be
explained below in detail with reference to the accompanying
drawings.
First Embodiment
[0066] FIG. 1 is a cross-sectional view illustrating a
configuration of an electronic circuit package 11A according to the
first embodiment of the present invention.
[0067] As illustrated in FIG. 1, the electronic circuit package 11A
according to the present embodiment includes a substrate 20, a
plurality of electronic components 31 and 32 mounted on the
substrate 20, and a magnetic mold resin 40 covering a front surface
21 of the substrate 20 so as to embed the electronic components 31
and 32.
[0068] Although the type of the electronic circuit package 11A
according to the present embodiment is not especially limited,
examples thereof include a high-frequency module handling a
high-frequency signal, a power supply module performing power
supply control, an SIP (System-In-Package) having a 2.5D structure
or a 3D structure, and a semiconductor package for radio
communication or digital circuit. Although only two electronic
components 31 and 32 are illustrated in FIG. 1, more electronic
components are incorporated actually.
[0069] The substrate 20 has a double-sided and multilayer wiring
structure in which a large number of wirings are embedded therein
and may be any type of substrate including: a thermosetting resin
based organic substrate such as an FR-4, an FR-5, a BT, a cyanate
ester substrate, a phenol substrate, or an imide substrate; a
thermoplastic resin based organic substrate such as a liquid
crystal polymer; an LTCC substrate; an HTCC substrate; and a
flexible substrate. In the present embodiment, the substrate 20 has
a four-layer structure including wiring layers formed on the front
surface 21 and a back surface 22 and two wiring layers embedded
therein. Land patterns 23 are an internal electrode for connecting
to the electronic components 31 and 32. The land patterns 23 and
each of the electronic components 31 and 32 are electrically and
mechanically connected to each other through a respective solder 24
(or a conductive paste). For example, the electronic component 31
is a semiconductor chip such as a controller, and electronic
component 32 is a passive component such as a capacitor or a coil.
Some electronic components (e.g., thinned semiconductor chip) maybe
embedded in the substrate 20.
[0070] The land patterns 23 are connected to external terminals 26
formed on the back surface 22 of the substrate 20 through internal
wirings 25 formed inside the substrate 20. Upon actual use, the
electronic circuit package 11A is mounted on an unillustrated
mother board, and land patterns on the mother board and the
external terminals 26 of the electronic circuit package 11A are
electrically connected. A material for a conductor forming the land
patterns 23, internal wirings 25, and external terminals 26 maybe a
metal such as copper, silver, gold, nickel, chrome, aluminum,
palladium, indium, or a metal alloy thereof or may be a conductive
material using resin or glass as a binder; however, when the
substrate 20 is an organic substrate or a flexible substrate,
copper or silver is preferably used in terms of cost and
conductivity. The above conductive materials may be formed by using
various methods such as printing, plating, foil lamination,
sputtering, vapor deposition, and inkjet.
[0071] The magnetic mold resin 40 covers the front surface 21 of
the substrate 20 so as to embed the electronic components 31 and 32
therein. The magnetic mold resin 40 is a mold member and serves
also as a magnetic shielding. In the present embodiment, a side
surface 42 of the magnetic mold resin 40 and a side surface 27 of
the substrate 20 form the same plane. Although details of the
magnetic mold resin 40 will be explained later, the magnetic mold
resin 40 composed of a composite magnetic sealing material having
very small thermal expansion coefficient (15 ppm/.degree. C. or
less for example) compared with a conventional magnetic sealing
material. The magnetic mold resin 40 contacts the electronic
components 31, 32 and land patterns 23, so that the volume
resistance thereof needs to be sufficiently large. Specifically, it
is desirable that the volume resistance is equal to or larger than
10.sup.10 .OMEGA.cm.
[0072] Further, when a distance between an electronic component
such as a high-frequency inductor and the magnetic mold resin 40 is
too small, characteristics thereof such as an inductance value may
fluctuate from a design value. In such a case, the fluctuation of
the characteristics can be reduced by covering a part of or the
entire electronic component with a non-magnetic member. FIG. 2 is a
cross-sectional view illustrating a configuration of an electronic
circuit package 11B according to a modification. The electronic
circuit package 11B of FIG. 2 differs from the electronic circuit
package 11A of FIG. 1 in that the electronic component 32 is
covered with a non-magnetic member 50. As the non-magnetic member
50, a common resin can be used. By interposing the non-magnetic
member 50 between the electronic component 32 and the magnetic mold
resin 40, a sufficient distance between the electronic component 32
and magnetic mold resin 40 can be ensured, so that it is possible
to reduce the fluctuation of characteristics such as the inductance
value.
[0073] The following describes a manufacturing method for the
electronic circuit package 11A according to the present
embodiment.
[0074] FIGS. 3 to 5 are process views for explaining a
manufacturing method for the electronic circuit package 11A.
[0075] As illustrated in FIG. 3, an assembly substrate 20A having a
multilayer wiring structure is prepared. A plurality of the land
patterns 23 are formed on the front surface 21 of the assembly
substrate 20A, and a plurality of the external terminals 26 are
formed on the back surface 22 of the assembly substrate 20A.
Further, a plurality of the internal wirings 25 are formed in an
inner layer of the assembly substrate 20A. A dashed line a in FIG.
3 denotes a part to be cut in a subsequent dicing process.
[0076] Then, as illustrated in FIG. 3, the plurality of electronic
components 31 and 32 are mounted on the front surface 21 of the
assembly substrate 20A so as to be connected to the land patterns
23. Specifically, the solder 24 is provided on the land pattern 23,
followed by mounting of the electronic components 31 and 32 and by
reflowing, whereby the electronic components 31 and 32 are
connected to the land patterns 23.
[0077] Then, as illustrated in FIG. 4, the front surface 21 of the
assembly substrate 20A is covered with the magnetic mold resin 40
so as to embed the electronic components 31 and 32 in the magnetic
mold resin 40. Examples of the formation method for the magnetic
mold resin 40 may include transfer molding, compression molding,
injection molding, cast molding, vacuum cast molding, dispense
molding, and molding using a slit nozzle.
[0078] Then, as illustrated in FIG. 5, the assembly substrate 20A
is cut along the dashed line a to divide the assembly substrate 20A
into individual substrates 20, whereby the electronic circuit
package 11A according to the present embodiment is completed.
[0079] The following describes details of the composite magnetic
sealing material constituting the magnetic mold resin 40.
[0080] FIG. 6 is a schematic view for explaining a configuration of
a composite magnetic sealing material constituting the magnetic
mold resin 40.
[0081] As illustrated in FIG. 6, a composite magnetic sealing
material 2 constituting the magnetic mold resin 40 includes a resin
material 4, and a first magnetic filler 5, a second magnetic filler
6 and a non-magnetic filler 8 which are blended in the resin
material 4. Although not especially limited, the resin material 4
is preferably composed mainly of a thermosetting resin material.
Specifically, the resin material 4 is preferably composed mainly of
an epoxy resin, a phenol resin, a urethane resin, a silicone resin,
or an imide resin and more preferably uses a base resin and a
curing agent used for an epoxy resin-based or a phenol resin-based
semiconductor sealing material.
[0082] The most preferable is the epoxy resin having a reactive
epoxy group at its terminal, which can be combined with various
types of curing agents and curing accelerators. Examples of the
epoxy resin include a bisphenol A epoxy resin, a bisphenol F epoxy
resin, a phenoxy type epoxy resin, a naphthalene type epoxy resin,
a multifunctional-type epoxy resin (dicyclopentadiene type epoxy
resin, etc.), a biphenyl-type (bifunctional) epoxy resin, and an
epoxy resin having a special structure. Among them, the biphenyl
type epoxy resin, naphthalene type epoxy resin, and
dicyclopentadiene type epoxy resin are useful since they can attain
low thermal expansion. Examples of the curing agent or curing
accelerator include amine-based compound alicyclic diamine,
aromatic diamine, other amine-based compounds (imidazole, tertiary
amine, etc.), an acid anhydride compound (high-temperature curing
agent, etc.), a phenol resin (novolac type phenol resin, cresol
novolac type phenol resin, etc.), an amino resin, dicyandiamide,
and a Lewis acid complex compound. For material kneading, known
means such as a kneader, three-roll mills, or a mixer may be
used.
[0083] The first magnetic filler 5 is formed of an Fe--Ni based
material and contains 32 wt. % or more and 39 wt. % or less of a
metal material composed mainly of Ni. The remaining 61-68 wt. % is
Fe. The blending ratio of the first and second magnetic fillers 5
and 6 to the composite magnetic sealing material 2 is 50 vol. % or
more and 85 vol. % or less. When the blending ratio of the first
and second magnetic fillers 5 and 6 is less than 50 vol. %, it is
difficult to obtain sufficient magnetic characteristics; on the
other hand, when the blending ratio of the first and second
magnetic fillers and 6 exceeds 85 vol. %, it is difficult to ensure
characteristics, such as flowability, required for a sealing
material.
[0084] The metal material composed mainly of Ni may contain a small
amount of Co. That is, a part of Ni may be substituted by Co. The
containment of Co enables a further reduction in the thermal
expansion coefficient of the composite magnetic sealing material 2.
The adding amount of Co to the first magnetic filler 5 is
preferably 0.1 wt. % or more and 5 wt. % or less.
[0085] The second magnetic filler 6 contains at least one selected
from the group consisting of Fe, an Fe--Co based alloy, an Fe--Ni
based alloy, an Fe--Al based alloy, an Fe--Si based alloy, an
Ni--Zn based spinel ferrite, an Mn--Zn based spinel ferrite, an
Ni--Cu--Zn based spinel ferrite, an Mg based spinel ferrite, and an
yttrium-iron based garnet ferrite. The second magnetic filler 6 may
be made of a single material or may be a mixed filler obtained by
mixing a filler made of a certain material and a filler made of
another material.
[0086] The first magnetic filler 5 has a larger grain diameter than
the second magnetic filler 6. More specifically, as illustrated in
FIG. 33, the first magnetic filler 5 has the grain size
distribution denoted by A, whereas the second magnetic filler 6 has
the grain size distribution denoted by B. That is, the second
magnetic filler 6 has a smaller grain size than the first magnetic
filler 5. Although not particularly limited, it is preferable that
the median diameter (D50) of the first magnetic filler 5 is about 5
.mu.m to about 30 .mu.m and that the median diameter (D50) of the
second magnetic filler 6 is about 0.01 .mu.m to about 5 .mu.m and,
it is more preferable that the median diameter (D50) of the first
magnetic filler 5 is about 5 .mu.m to about 20 .mu.m, and that the
median diameter (D50) of the second magnetic filler 6 is about 0.01
.mu.m to about 3 .mu.m. Such a difference in the grain size
distribution allows the first and second magnetic fillers 5 and 6
to be closely packed in the resin material 4. When a mixed filler
obtained by mixing a plurality of different materials is used as
the second magnetic filler 6, it is not essential that the grain
size distributions of the respective fillers match each other.
Further, the first and second magnetic fillers 5 and 6 maybe made
of substantially the same material, while the grain size
distribution thereof alone is differentiated.
[0087] The shape of each of the first and second magnetic fillers 5
and 6 is not especially limited. However, the first and second
magnetic fillers 5 and 6 may each preferably be formed into a
spherical shape for close packing. Further, forming the first and
second magnetic fillers 5 and 6 into a substantially spherical
shape enables a reduction in damage to electronic components during
molding. Particularly, for close packing or closest packing, each
of the first and second magnetic fillers 5 and 6 is preferably
formed into a true sphere. The first and second magnetic fillers 5
and 6 each preferably have a high tap density and a small specific
surface area. As a formation method for the first and second
magnetic fillers 5 and 6, there are known a water atomization
method, a gas atomization method, a centrifugal disc atomization
method, a heating and pressurizing reaction, a thermal
decomposition method, a spray-drying method, a compression molding
method, and a rolling granulation method.
[0088] Although not especially limited, the surface of the first
and second magnetic fillers 5 and 6 is covered with an insulating
coat 7 formed of an oxide of metal such as Si, Al, Ti, or Mg or an
organic material for enhancement of flowability, adhesion, and
insulation performance. To sufficiently enhance the volume
resistivity of the composite magnetic sealing material 2, the film
thickness of the insulating coat 7 is preferably set to 10 nm or
more. The insulating coat 7 may be achieved by coating a
thermosetting material on the surface of the first and second
magnetic fillers 5 and 6 or may be achieved by formation of an
oxide film by hydration of metal alkoxide such as
tetraethyloxysilane or tetraemthyloxysilane and, most preferably,
it is achieved by formation of a silicon oxide coating film.
Further, more preferably, organofunctional coupling treatment is
applied to the insulating coat 7.
[0089] In this embodiment, the composite magnetic sealing material
2 contains the non-magnetic filler 8. As the non-magnetic filler 8,
a material having a smaller thermal expansion coefficient than that
of the first and second magnetic fillers 5 and 6, such as
SiO.sub.2, a low thermal expansion crystallized glass (lithium
aluminosilicate based crystallized glass), ZrW.sub.2O.sub.8,
(ZrO).sub.2P.sub.2O.sub.7, KZr.sub.2(PO.sub.4).sub.3, or
Zr.sub.2(WO.sub.4) (PO.sub.4).sub.2, or a material having a
negative thermal expansion coefficient is preferably used. By
adding the non-magnetic filler 8 to the composite magnetic sealing
material 2, it is possible to further reduce the thermal expansion
coefficient. Further, the following materials may be added to the
composite magnetic sealing material 2: flame retardant such as
aluminum oxide or magnesium oxide; carbon black, pigment, or dye
for coloring; surface-treated nanosilica having a particle diameter
of 100 nm or less for enhancement of slidability, flowability, and
dispersibility/kneadability; and a wax component for enhancement of
mold releasability. In the present invention, it is not essential
that the composite magnetic sealing material constituting the
magnetic mold resin 40 contains the non-magnetic filler.
[0090] Further, organofunctional coupling treatment may be applied
to the surface of the first and second magnetic fillers 5 and 6 or
surface of the non-magnetic filler 8 for enhancement of adhesion
and flowability. The organofunctional coupling treatment may be
performed using a known wet or dry method, or by an integral blend
method. Further, the surface of the first and second magnetic
fillers 5 and 6 or surface of the non-magnetic filler 8 maybe
coated with a thermosetting resin for enhancement of
wettability.
[0091] When the non-magnetic filler 8 is added, the ratio of the
amount of the non-magnetic filler 8 relative to the sum of the
amounts of the first and second magnetic fillers 5 and 6 and the
non-magnetic filler 8 is preferably 1 vol. % or more and 30 vol. %
or less. In other words, 1 vol. % or more and 30 vol. % or less of
the first and second magnetic fillers 5 and 6 can be substituted by
the non-magnetic filler 8. When the additive amount of the
non-magnetic filler 8 is less than 1 vol. %, addition effect of the
non-magnetic filler 8 is hardly obtained; on the other hand, when
the additive amount of the non-magnetic filler 8 exceeds 30 vol. %,
the relative amount of the first and second magnetic fillers 5 and
6 is too small, resulting in difficulty in providing sufficient
magnetic characteristics.
[0092] As illustrated in FIG. 33, the non-magnetic filler 8 has the
grain size distribution denoted by C. In the example of FIG. 33,
the grain diameter of the non-magnetic filler 8 is smaller than
that of the second magnetic filler 6. Although not particularly
limited, the median diameter (D50) of the non-magnetic filler 8 is
about 0.01 .mu.m to about 3 .mu.m. When the non-magnetic filler 8
having a smaller grain diameter than the second magnetic filler 6
is used as described above, the second magnetic filler 6 can be
packed more densely, making it possible to improve the magnetic
characteristics. For further improvement of magnetic
characteristics, the non-magnetic filler 8 may not be added, that
is, only the first and second magnetic fillers 5 and 6 may be
added.
[0093] However, it is not essential that the grain diameter of the
non-magnetic filler 8 is smaller than that of the second magnetic
filler 6, but the grain diameter (denoted by C) of the non-magnetic
filler 8 may be larger than that (denoted by B) of the second
magnetic filler 6, as illustrated in FIG. 34. When the non-magnetic
filler 8 having a larger grain diameter than the second magnetic
filler 6 is used, the non-magnetic filler 8 can be packed more
densely, making it possible to further reduce the thermal expansion
coefficient. Alternatively, the grain diameter of the non-magnetic
filler 8 may be equivalent to that of the second magnetic filler 6.
As the material for the non-magnetic filler 8, a low thermal
expansion crystallized glass (lithium aluminosilicate based
crystallized glass) can be used.
[0094] The composite magnetic sealing material 2 may be a liquid or
solid, depending on selection of a base resin and a curing agent
according to the molding method therefor. The composite magnetic
sealing material 2 in a solid state may be formed into a tablet
shape for transfer molding and into a granular shape for injection
molding or compression molding. The molding method using the
composite magnetic sealing material 2 may be appropriately selected
from among the followings: transfer molding; compression molding;
injection molding; cast molding; vacuum cast molding; vacuum
printing; printing; dispensing; and a method using a slit nozzle. A
molding condition may be appropriately selected from combinations
of the base resin, curing agent and curing accelerator to be used.
Further, after-cure treatment may be applied as needed after the
molding.
[0095] FIG. 7 is a graph illustrating the relationship between the
Ni ratio of the first magnetic filler 5 and the thermal expansion
coefficient and the magnetic permeability of the composite magnetic
sealing material 2. The graph of FIG. 7 represents a case where the
first magnetic filler 5 is composed of substantially only Fe and
Ni. Here, it is assumed that the additive amount of the first
magnetic filler 5 relative to the composite magnetic sealing
material 2 is 70 vol. % and the second magnetic filler 6 and the
non-magnetic filler 8 are not added to the composite magnetic
sealing material 2.
[0096] As illustrated in FIG. 7, when the Ni ratio of the first
magnetic filler 5 is 32 wt. % or more and 39 wt. % or less, the
thermal expansion coefficient of the composite magnetic sealing
material 2 is remarkably reduced (it may be reduced to 10
ppm/.degree. C. in some conditions). In the example of FIG. 7, the
smallest thermal expansion coefficient (about 9.3 ppm/.degree. C.)
is obtained when the Ni ratio is about 35 wt. %. On the other hand,
the magnetic permeability is not strongly correlated to the Ni
ratio, and .mu. is 12 to 13 in the range of the Ni ratio
illustrated in FIG. 7.
[0097] The reason that such characteristics are obtained is that
invar characteristics where volumetric changes due to thermal
expansion and magnetic distortion cancel out each other is
exhibited when the Ni ratio falls within the above range. A
material where the invar characteristic is exhibited is called an
invar material, which is known as a material for a die requiring
high precision; however, it was not used as a material for the
magnetic filler to be blended in a composite magnetic sealing
material. The present inventor pays attention to the magnetic
characteristics and small thermal expansion coefficient that the
invar material has and uses the invar material as a material for
the magnetic filler and thereby realize the composite magnetic
sealing material 2 having the magnetic shielding characteristics
and a small thermal expansion coefficient. Moreover, in this
embodiment, the magnetic shielding characteristics is enhanced by
adding not only the first magnetic filler 5 of the invar material
but also the second magnetic filler 6.
[0098] FIG. 8 is a graph illustrating the relationship between the
Ni ratio of the first magnetic filler 5 and the thermal expansion
coefficient of the composite magnetic sealing material 2. The graph
of FIG. 8 represents a case where the first magnetic filler 5 is
composed substantially of only Fe and Ni. Here, it is assumed that
the additive amount of the first magnetic filler 5 relative to the
composite magnetic sealing material 2 is 50 vol. %, 60 vol. %, or
70 vol. % and the second magnetic filler 6 and the non-magnetic
filler 8 are not added to the composite magnetic sealing material
2.
[0099] As illustrated in FIG. 8, even in a case where the additive
amount of the first magnetic filler 5 is either 50 vol. %, 60 vol.
%, or 70 vol. %, when the Ni ratio of the first magnetic filler 5
is 32 wt. % or more and 39 wt. % or less, the thermal expansion
coefficient of the composite magnetic sealing material 2 is
remarkably reduced. The more the additive amount of the first
magnetic filler 5 is, the smaller the thermal expansion
coefficient. Therefore, when the additive amount of the first
magnetic filler 5 is small (e.g., 30 vol. %), the non-magnetic
filler 8 formed of fused silica is further added to reduce the
thermal expansion coefficient of the composite magnetic sealing
material 2 to 15 ppm/.degree. C. or less, for example.
Specifically, by setting the total additive amount of the first and
second magnetic fillers 5 and 6 and the non-magnetic filler 8 to 50
vol. % or more and 85 vol. % or less, the thermal expansion
coefficient of the composite magnetic sealing material 2 can be
sufficiently reduced (e.g., to 15 ppm/.degree. C. or less).
[0100] FIG. 9 is a graph illustrating the relationship between the
Ni ratio of the first magnetic filler 5 and the magnetic
permeability of the composite magnetic sealing material 2. As in
the case of the graph of FIG. 8, the graph of FIG. 9 represents a
case where the first magnetic filler 5 is composed substantially of
only Fe and Ni and the additive amount of the first magnetic filler
5 relative to the composite magnetic sealing material 2 is 50 vol.
%, 60 vol. %, or 70 vol. %, and the second magnetic filler 6 and
the non-magnetic filler 8 are not added to the composite magnetic
sealing material 2.
[0101] As illustrated in FIG. 9, even in a case where the additive
amount of the first magnetic filler 5 is either 50 vol. %, 60 vol.
%, or 70 vol. %, the Ni ratio and the magnetic permeability are not
strongly correlated to each other. The more the additive amount of
the first magnetic filler 5 is, the larger the magnetic
permeability. The magnetic permeability can be adjusted by an
amount of the second magnetic filler 6.
[0102] FIG. 10 is a graph illustrating the relationship between the
Co ratio of the first magnetic filler 5 and the thermal expansion
coefficient and magnetic permeability of the composite magnetic
sealing material 2. The graph of FIG. 10 represents a case where
the sum of the amounts of Ni and Co contained in the first magnetic
filler 5 is 37 wt. %, the additive amount of the first magnetic
filler 5 relative to the composite magnetic sealing material 2 is
70 vol. %, and the second magnetic filler 6 and the non-magnetic
filler 8 are not added to the composite magnetic sealing material
2.
[0103] As illustrated in FIG. 10, as compared to a case where Co is
not contained (Co=0 wt. %) in the first magnetic filler 5, the
thermal expansion coefficient of the composite magnetic sealing
material 2 is further reduced when Ni constituting the first
magnetic filler 5 is substituted by 8 wt. % or less of Co. The
thermal expansion coefficient is markedly reduced when Ni is
substituted by 5 wt. % or less of Co. However, when the substituted
amount by Co is 10 wt. %, the thermal expansion coefficient is
conversely increased. Therefore, the additive amount of Co relative
to the first magnetic filler 5 is preferably 0.1 wt. % or more and
8 wt. % or less, and more preferably 0.1 wt. % or more and 5 wt. %
or less.
[0104] FIG. 11 is a graph illustrating the relationship between the
additive ratio of the non-magnetic filler 8 and the thermal
expansion coefficient of the composite magnetic sealing material 2.
The graph of FIG. 11 represents a case where the sum of the amounts
of the first magnetic filler 5 and the non-magnetic filler 8 is 70
vol. %, the first magnetic filler 5 is composed of 64 wt. % of Fe
and 36 wt. % of Ni, and the non-magnetic filler 8 is formed of
SiO.sub.2. The second magnetic filler 6 is not added.
[0105] As illustrated in FIG. 11, as the ratio of the amount of the
non-magnetic filler 8 is increased, the thermal expansion
coefficient is reduced. However, when the ratio of the amount of
the non-magnetic filler 8 relative to 70 vol. % of the first
magnetic filler 5 exceeds 30 vol. %, a thermal expansion
coefficient reduction effect is reduced, and when the ratio of the
amount of the non-magnetic filler 8 relative to 60 vol. % of the
first magnetic filler 5 exceeds 40 vol. %, the thermal expansion
coefficient reduction effect is nearly saturated. Thus, the amount
of the non-magnetic filler 8 relative to the sum of the amounts of
the first and second magnetic fillers 5 and 6 and non-magnetic
filler 8 is preferably 1 vol. % or more and 40 vol. % or less and,
more preferably, 1 vol. % or more and 30 vol. % or less.
[0106] FIG. 12 is a graph illustrating the relationship between the
presence/absence of the insulating coat 7 formed on the surface of
the first magnetic filler 5 and volume resistivity. Two
compositions are prepared as a material for the first magnetic
filler 5 as follows: composition A (Fe=64 wt. %, Ni=36 wt. %); and
composition B (Fe=63 wt. %, Ni=32 wt. %, Co=5 wt. %). The
insulating coat 7 is formed of SiO.sub.2 having a thickness of 40
nm. The first magnetic filler 5 of either the composition A or
composition B has a cut diameter of 32 .mu.m and a particle
diameter D50 of 20 .mu.m.
[0107] As illustrated in FIG. 12, in both the composition A and
composition B, coating with the insulating coat 7 significantly
increases the volume resistivity of the first magnetic filler 5. In
addition, the coating with the insulating coat 7 reduces pressure
dependency of the first magnetic filler 5 at the time of
measurement. The same is true on the second magnetic filler 6,
coating with the insulating coat 7 significantly increases the
volume resistivity of the second magnetic filler 6.
[0108] FIG. 13 is a graph illustrating the relationship between the
film thickness of the insulating coat 7 formed on the surface of
the first magnetic filler 5 and volume resistivity. The graph of
FIG. 13 represents a case where the first magnetic filler 5 is
composed of 64 wt. % of Fe and 36 wt. % of Ni. The particle
diameter of the first magnetic filler 5 is equal to the particle
diameter of the first magnetic filler 5 in the example of FIG.
12.
[0109] As illustrated in FIG. 13, by coating the first magnetic
filler 5 with the insulating coat 7 having a film thickness of 10
nm or more, the volume resistivity of the first magnetic filler 5
is increased. In particular, when the first magnetic filler 5 is
coated with the insulating coat 7 having a film thickness of 30 nm
or more, a very high volume resistivity can be obtained regardless
of an applied pressure at the time of measurement. The same is true
on the second magnetic filler 6, coating with the insulating coat 7
having a film thickness of 10 nm or more significantly increases
the volume resistivity of the second magnetic filler 6.
[0110] FIG. 14 is a graph illustrating the relationship between the
volume resistivity of the first magnetic filler 5 and that of the
composite magnetic sealing material 2.
[0111] As illustrated in FIG. 14, the volume resistivity of the
first magnetic filler 5 and that of the composite magnetic sealing
material 2 are in proportion to each other. In particular, when the
volume resistivity of the first magnetic filler 5 is 10.sup.5
.OMEGA.cm or more, the volume resistivity of the composite magnetic
sealing material 2 can be increased to 10.sup.10 .OMEGA.cm or more.
The same is true on the second magnetic filler 6, when the volume
resistivity of the second magnetic filler 6 is 10.sup.5 .OMEGA.cm
or more, the volume resistivity of the composite magnetic sealing
material 2 can be increased to 10.sup.10 .OMEGA.cm or more. When
the composite magnetic sealing material 2 having a volume
resistivity of 10.sup.10 .OMEGA.cm or more is used as a molding
material for electronic circuit package, a sufficient insulating
performance can be ensured.
[0112] As described above, the electronic circuit packages 11A and
11B each have the magnetic mold resin 40 composed of composite
magnetic sealing material 2 having very small thermal expansion
coefficient. Therefore, it is possible to prevent the warp of the
substrate, interfacial delamination or crack of a molding material
caused due to a temperature change with obtaining the magnetic
shielding characteristics.
Second Embodiment
[0113] FIG. 15 is a cross-sectional view illustrating a
configuration of an electronic circuit package 12A according to the
second embodiment of the present invention.
[0114] As illustrated in FIG. 15, an electronic circuit package 12A
according to the present embodiment differs from the electronic
circuit package 11A according to the first embodiment illustrated
in FIG. 1 in that a planar size of the magnetic mold resin 40 is
slightly smaller than a planar size of the substrate 20 and,
therefore, an outer peripheral portion of the front surface 21 of
the substrate 20 is exposed from the magnetic mold resin 40. Other
configurations are the same as those of the electronic circuit
package 11A according to the first embodiment. Thus, in FIG. 15,
the same reference numerals are given to the same elements as in
FIG. 1, and repetitive descriptions will be omitted.
[0115] As exemplified by the electronic circuit package 12A
according to the present embodiment, it is not essential in the
present invention that the side surface 42 of the magnetic mold
resin 40 and the side surface 27 of the substrate 20 form the same
plane, but the planar size of the magnetic mold resin 40 may be
smaller than that of the substrate 20.
[0116] FIGS. 16 to 18 are views for explaining a manufacturing
method for the electronic circuit package 12A.
[0117] First, as illustrated in FIG. 16, the substrate 20 is
prepared by previously cutting the assembly substrate 20A into
individual pieces, and the plurality of electronic components 31
and 32 are mounted on the substrate 20 so as to be connected to the
land patterns 23 on the front surface 21 of the substrate 20.
Specifically, the solder 24 is provided on the land patterns 23,
followed by mounting of the electronic components 31 and 32 and by
reflowing, whereby the electronic components 31 and 32 are
connected to the land pattern 23.
[0118] Then, as illustrated in FIG. 17, the substrate 20 on which
the electronic components 31 and 32 are mounted is set in a mold
80. Then, as illustrated in FIG. 18, a composite magnetic material
which is a material forming the magnetic mold resin 40 is injected
along a flow path 81 of the mold 80, followed by pressuring and
heating. The electronic circuit package 12A according to the
present embodiment is then completed.
[0119] As described above, the magnetic mold resin 40 may be formed
after dividing the assembly substrate 20A into individual
substrates 20.
Third Embodiment
[0120] FIG. 19 is a cross-sectional view illustrating a
configuration of an electronic circuit package 13A according to the
third embodiment of the present invention.
[0121] As illustrated in FIG. 19, the electronic circuit package
13A according to the present embodiment differs from the electronic
circuit package 11A in that it further includes a metal film 60
that covers an upper surface 41 and a side surface 42 of the
magnetic mold resin 40 and covers a side surface 27 of the
substrate 20. Out of the internal wirings 25 illustrated in FIG.
19, internal wirings 25G are power supply patterns. A part of the
power supply patterns 25G is exposed from the substrate 20 on the
side surface 27. The power supply patterns 25G are typically ground
patterns to which a ground potential is to be applied; however, it
is not limited to the ground patterns as long as the power supply
patterns 25G are a pattern to which a fixed potential is to be
applied. Other configurations are the same as those of the
electronic circuit package 11A according to the first embodiment.
Thus, in FIG. 19, the same reference numerals are given to the same
elements as in FIG. 1, and repetitive descriptions will be
omitted.
[0122] The metal film 60 serves as an electromagnetic shielding and
is preferably mainly composed of at least one metal selected from a
group consisting of Au, Ag, Cu, and Al. The metal film 60
preferably has a resistance as low as possible and most preferably
uses Cu in terms of cost. An outer surface of the metal film 60 is
preferably covered with an anticorrosive metal such as SUS, Ni, Cr,
Ti, or brass or an antioxidant film made of a resin such as an
epoxy resin, a phenol resin, an imide resin, an urethane resin, or
a silicone resin. The reason for this is that the metal film 60
undergoes oxidative deterioration by an external environment such
as heat or humidity; and, therefore, the aforementioned treatment
is preferable to suppress and prevent the oxidative deterioration.
A formation method for the metal film 60 may be appropriately
selected from known methods, such as a sputtering method, a
vapor-deposition method, an electroless plating method, an
electrolytic plating method. Before formation of the metal film 60,
pretreatment for enhancing adhesion, such as plasma treatment,
coupling treatment, blast treatment, or etching treatment, may be
performed. As a base of the metal film 60, a high adhesion metal
film such as a titanium film, a chromium film, or an SUS film may
be formed thinly in advance.
[0123] As illustrated in FIG. 19, the power supply patterns 25G are
exposed to the side surfaces 27 of the substrate 20. The metal film
60 covers the side surfaces 27 of the substrate 20 and is thereby
connected to the power supply pattern 25G.
[0124] It is desirable that a resistance value at an interface
between the metal film 60 and the magnetic mold resin 40 is equal
to or larger than 10.sup.6.OMEGA.. In this case, an eddy current
generated when electromagnetic wave noise enters the metal film 60
hardly flows in the magnetic mold resin 40, which can prevent
deterioration in the magnetic characteristics of the magnetic mold
resin 40 due to inflow of the eddy current. The resistance value at
the interface between the metal film 60 and the magnetic mold resin
40 refers to a surface resistance of the magnetic mold resin 40
when the metal film 60 and magnetic mold resin 40 directly contact
each other and to a surface resistance of an insulating film when
the insulating film is present between the metal film 60 and the
magnetic mold resin 40. The resistance value at the interface
between the metal film 60 and the magnetic mold resin 40 is
preferably equal to or larger than 10.sup.6.OMEGA. over the entire
area of the interface; however, it does not matter if the
resistance value is partly smaller than 10.sup.6.OMEGA..
[0125] Basically, the surface resistance value of the magnetic mold
resin 40 substantially coincides with the volume resistivity of the
magnetic mold resin 40. Thus, basically, when the volume
resistivity of the magnetic mold resin 40 is equal to or larger
than 10.sup.10 .OMEGA.cm, the surface resistance value of the
magnetic mold resin 40 is also equal to or larger than
10.sup.10.OMEGA.. However, as explained with reference to FIG. 5,
the magnetic mold resin 40 undergoes dicing at manufacturing, so
that the first and second magnetic fillers 5 and 6 may be exposed
to a cut surface (i.e., side surface 42), and in this case, the
surface resistance value of the side surface 42 becomes smaller
than the volume resistivity. Similarly, when the top surface 41 of
the magnetic mold resin 40 is ground for reducing height or
roughing the surface, the first and second magnetic fillers 5 and 6
may be exposed to the top surface 41, and in this case, the surface
resistance value of the top surface 41 becomes smaller than the
volume resistivity. As a result, even when the volume resistivity
of the magnetic mold resin 40 is equal to or larger than 10.sup.10
.OMEGA.cm, the surface resistance value of the magnetic mold resin
40 may be smaller than 10.sup.10.OMEGA.; however, in such a case,
when the surface resistance value of the magnetic mold resin 40 is
equal to or larger than 10.sup.6.OMEGA., it is possible to prevent
inflow of the eddy current.
[0126] When the surface resistance value of the top surface 41 or
side surface 42 of the magnetic mold resin 40 is reduced to smaller
than 10.sup.6.OMEGA., a thin insulating material may be formed on
the top surface 41 or side surface 42 of the magnetic mold resin
40. FIG. 20 is a cross-sectional view illustrating a configuration
of an electronic circuit package 13B according to a first
modification. The electronic circuit package 13B of FIG. 20 differs
from the electronic circuit package 13A of FIG. 19 in that a thin
insulating film 70 is interposed between the top surface 41 and
side surfaces 42 of the magnetic mold resin 40 and the metal film
60. With this configuration, even when the surface resistance value
of the top surface 41 or side surface 42 of the magnetic mold resin
40 is reduced to smaller than 10.sup.6.OMEGA., the resistance value
at the interface between the metal film 60 and the magnetic mold
resin 40 can be made equal to or larger than 10.sup.6.OMEGA.,
making it possible to prevent deterioration in the magnetic
characteristics due to the eddy current.
[0127] FIG. 21 is a cross-sectional view illustrating a
configuration of an electronic circuit package 13C according to a
second modification of the third embodiment.
[0128] As illustrated in FIG. 21, an electronic circuit package 13C
according to the second modification differs from the electronic
circuit package 13A illustrated in FIG. 19 in that a planar size of
the magnetic mold resin 40 is slightly smaller than a planar size
of the substrate 20 and, therefore, an outer peripheral portion of
the front surface 21 of the substrate is exposed from the magnetic
mold resin 40. Other configurations are the same as those of the
electronic circuit package 13A. Thus, in FIG. 21, the same
reference numerals are given to the same elements as in FIG. 19,
and repetitive descriptions will be omitted.
[0129] As exemplified by the electronic circuit package 13C
according to the second modification, it is not essential in the
present invention that the side surface 42 of the magnetic mold
resin 40 and the side surface 27 of the substrate 20 form the same
plane, but the planar size of the magnetic mold resin 40 may be
smaller than that of the substrate 20.
[0130] Further, as illustrated in FIG. 22 which illustrates an
electronic circuit package 13D as the third modification of this
embodiment, a structure in which the metal film 60 does not cover
the side surface 27 of the substrate 20 may be employed. In this
case, a power supply patterns 28G are provided at an outer
peripheral portion of the surface 21 of the substrate 20 that is
exposed from the magnetic mold resin 40 and contacts the metal film
60. As a result, a fixed potential such as a ground potential is
applied to the metal film 60.
[0131] FIG. 23 is a cross-sectional view illustrating a
configuration of an electronic circuit package 13E according to the
fourth modification of the third embodiment.
[0132] As illustrated in FIG. 23, an electronic circuit package 13E
according to the fourth modification differs from the electronic
circuit package 13A illustrated in FIG. 19 in that the planar size
of the magnetic mold resin 40 is slightly larger than the planar
size of the substrate 20. Other configurations are the same as
those of the electronic circuit package 13A. Thus, in FIG. 23, the
same reference numerals are given to the same elements as in FIG.
19, and repetitive descriptions will be omitted.
[0133] As exemplified by the electronic circuit package 13E
according to the fourth modification, in the present invention, the
planar size of the magnetic mold resin 40 may be larger than that
of the substrate 20.
[0134] As described above, the electronic circuit packages 13A to
13E according to the present embodiment use the magnetic mold resin
40 and have the surfaces covered with the metal film 60. With this
configuration, it is possible to obtain a composite shielding
structure. This can effectively shield electromagnetic wave noise
radiated from the electronic components 31 and 32 and external
electromagnetic wave noise entering the electronic components 31
and 32 while achieving reduction in height. In particular, the
electronic circuit packages 13A to 13E according to the present
embodiment can shield the electromagnetic wave noise radiated from
the electronic components 31 and 32 more effectively. This is
because the electromagnetic wave noise radiated from the electronic
components 31 and 32 is partly absorbed when it passes through the
magnetic mold resin 40, and the remaining electromagnetic wave
noise that has not been absorbed is reflected by the metal film 60
and passes through the magnetic mold resin 40 once again. As
described above, the magnetic mold resin 40 acts on the incident
electromagnetic wave noise twice, thereby effectively shielding the
electromagnetic wave noise radiated from the electronic components
31 and 32.
[0135] Further, when the volume resistivity of the magnetic mold
resin 40 is equal to or more than 10.sup.10 .OMEGA.cm in the
electronic circuit packages 13A to 13E according to the present
embodiment, it is possible to ensure sufficient insulating
performance required for the mold member. In addition, when the
resistance value at the interface between the magnetic mold resin
40 and the metal film 60 is equal to or more than 10.sup.6.OMEGA.,
it is possible to substantially prevent the eddy current generated
when the electromagnetic wave noise enters the metal film 60 from
flowing into the magnetic mold resin 40. As a result, it is
possible to prevent deterioration in the magnetic characteristics
of the magnetic mold resin 40 due to inflow of the eddy
current.
[0136] FIG. 24 is a graph illustrating noise attenuation in the
electronic circuit package 13A in the case where the substrate 20
has a thickness of 0.25 mm, and the magnetic mold resin 40 has a
thickness of 0.50 mm. The metal film 60 is composed of a laminated
film of Cu and Ni, and two types of metal films 60 whose Cu films
have different thicknesses are evaluated. Specifically, the metal
film 60 of sample A has a configuration in which the Cu film having
a thickness of 4 .mu.m and the Ni film having a thickness of 2
.mu.m are laminated, and the metal film 60 of sample B has a
configuration in which the Cu film having a thickness of 7 .mu.m
and the Ni film having a thickness of 2 .mu.m are laminated. For
comparison, values of samples C and D each formed by using a
molding material not containing the first and second magnetic
fillers 5 and 6 are also shown. The metal film 60 of sample C has a
configuration in which the Cu film having a thickness of 4 .mu.m
and the Ni film having a thickness of 2 .mu.m are laminated, and
the metal film 60 of sample D has a configuration in which the Cu
film having a thickness of 7 .mu.m and the Ni film having a
thickness of 2 .mu.m are laminated.
[0137] As illustrated in FIG. 24, when the composite magnetic
sealing material 2 containing the first and second magnetic fillers
5 and 6 is used, noise attenuation effect is enhanced especially at
a frequency band of 100 MHz or less as compared to a case where the
molding material not containing the first and second magnetic
fillers 5 and 6 is used. Further, it can be seen that the larger
the thickness of the metal film 60, the higher the noise
attenuation performance.
[0138] FIGS. 25 to 27 are graphs each illustrating the relationship
between the film thickness of the metal film 60 included in the
electronic circuit package 13A and noise attenuation. FIG. 25, FIG.
26, and FIG. 27 illustrate the noise attenuation in the frequency
bands of 20 MHz, 50 MHz, and 100 MHz, respectively. For comparison,
a value obtained when a molding material not containing the first
and second magnetic fillers 5 and 6 is also shown.
[0139] As illustrated, in all the frequency bands of FIGS. 25 to
27, the larger the thickness of the metal film 60, the higher the
noise attenuation performance. Further, by using the composite
magnetic sealing material 2 containing the first and second
magnetic fillers 5 and 6, it is possible to obtain higher noise
attenuation performance in all the frequency bands of FIGS. 25 to
27, than in a case where a molding material not containing the
first and second magnetic fillers 5 and 6.
[0140] FIG. 28 is a graph illustrating the warp amount of the
substrate 20 during temperature rising and that during temperature
dropping in the electronic circuit packages 11A (without metal
film) and the electronic circuit packages 13A (with metal film).
For comparison, values obtained when the first and second magnetic
fillers 5 and 6 are substituted by the non-magnetic filler formed
of SiO.sub.2 are shown in FIG. 29.
[0141] As illustrated in FIG. 28, the warp amount of the substrate
20 caused due to a temperature change is smaller in the electronic
circuit package 13A having the metal film 60 than in the electronic
circuit package 11A not having the metal film 60. Further, as is
clear from a comparison between FIGS. 28 and 29, the warp
characteristics of the respective electronic circuit packages 11A
and 13A using the composite magnetic sealing material 2 containing
the first and second magnetic fillers 5 and 6 are substantially
equivalent to the warp characteristics of the respective electronic
circuit packages 11A and 13A using a molding material containing
the non-magnetic filler formed of SiO.sub.2.
Fourth Embodiment
[0142] FIG. 30 is a cross-sectional view illustrating a
configuration of an electronic circuit package 14A according to the
fourth embodiment of the present invention.
[0143] As illustrated in FIG. 30, an electronic circuit package 14A
according to the present embodiment is the same as the electronic
circuit package 13A according to the third embodiment illustrated
in FIG. 19 except for shapes of the substrate 20 and metal film 60.
Thus, in FIG. 30, the same reference numerals are given to the same
elements as in FIG. 19, and repetitive descriptions will be
omitted.
[0144] In the present embodiment, the side surface 27 of the
substrate 20 is formed stepwise. Specifically, a side surface lower
portion 27b protrudes from aside surface upper portion 27a. The
metal film 60 is not formed over the entire side surface of the
substrate 20 but formed so as to cover the side surface upper
portion 27a and a step portion 27c. That is, the side surface lower
portion 27b is not covered with the metal film 60. Also in the
present embodiment, the power supply patterns 25G are exposed from
the side surface upper portion 27a of the substrate 20, so that the
metal film 60 is connected to the power supply patterns 25G at the
exposed portion.
[0145] FIGS. 31 and 32 are process views for explaining a
manufacturing method for the electronic circuit package 14A.
[0146] First, the magnetic mold resin 40 is formed on the front
surface 21 of the assembly substrate 20A by using the method
described in FIGS. 3 and 4. Then, as illustrated in FIG. 31, a
groove 43 is formed along the dashed line a denoting the dicing
position. In the present embodiment, the power supply patterns 25G
pass the dashed line a as a dicing position. Thus, when the
assembly substrate 20A is cut along the dashed line a, the power
supply patterns 25G are exposed from the side surface 27 of the
substrate 20. The groove 43 is formed so as to completely cut the
magnetic mold resin 40 and so as not to completely cut the assembly
substrate 20A. As a result, the side surface 42 of the magnetic
mold resin 40 and side surface upper portion 27a and step portion
27c of the substrate 20 are exposed inside the groove 43. A depth
of the groove 43 is set so as to allow at least the power supply
patterns 25G to be exposed from the side surface upper portion
27a.
[0147] Then, as illustrated in FIG. 32, the metal film 60 is formed
by using a sputtering method, a vapor-deposition method, an
electroless plating method, an electrolytic plating method, or the
like. As a result, the top surface 41 of the magnetic mold resin 40
and inside of the groove 43 are covered with the metal film 60. At
this time, the power supply patterns 25G exposed to the side
surface upper portion 27a of the substrate 20 are connected to the
metal film 60.
[0148] Then, the assembly substrate 20A is cut along the dashed
line a to divide the assembly substrate 20A into individual
substrates 20, whereby the electronic circuit package 14A according
to the present embodiment is completed.
[0149] As described above, according to the manufacturing method
for the electronic circuit package 14A of the present embodiment,
formation of the groove 43 allows the metal film 60 to be formed
before dividing the assembly substrate 20A into individual
substrates 20, thereby forming the metal film 60 easily and
reliably.
Fifth Embodiment
[0150] FIG. 35 is a cross-sectional view illustrating the
configuration of an electronic circuit package 15A according to a
fifth embodiment of the present invention.
[0151] As illustrated in FIG. 35, the electronic circuit package
15A according to the present embodiment differs from the electronic
circuit package 13A according to the third embodiment illustrated
in FIG. 19 in that it has a soft magnetic metal film 90. Other
configurations are the same as those of the electronic circuit
package 13A according to the third embodiment, so the same
reference numerals are given to the same elements, and overlapping
description will be omitted.
[0152] The soft magnetic metal film 90 may be made of Fe or an
Fe--Ni based alloy and functions as both an electromagnetic shield
and a second magnetic shield. That is, the electronic circuit
package 15A according to the present embodiment uses the magnetic
mold resin 40, and the surface of the magnetic mold resin 40 is
covered with the soft magnetic metal film 90, thus obtaining a
double composite shield structure. The outside surface of the soft
magnetic metal film 90 is preferably covered with an antioxidant
film made of anticorrosive metal such as SUS, Ni, Cr, Ti, or brass,
or resin such as an epoxy resin, a phenol resin, an imide resin, an
urethane resin, or a silicone resin. This is because formation of
the anticorrosive film can suppress or prevent oxidation
degradation of the soft magnetic metal film 90 due to external
environment such as heat or humidity. The formation method for the
soft magnetic metal film 90 may be selected appropriately from
known methods such as a sputtering method, a vapor-deposition
method, an electroless plating method, and an electrolytic plating
method. Before the formation of the soft magnetic metal film 90,
adhesion improvement pre-treatment such as plasma treatment,
coupling treatment, blast treatment or etching treatment may be
applied. Further, a high adhesion metal film such as titanium,
chrome, or SUS may previously be formed thinly as a base of the
soft magnetic metal film 90.
[0153] As illustrated in FIG. 35, the power supply pattern 25G is
exposed to the side surface 27 of the substrate 20, and the soft
magnetic metal film 90 covers the side surface 27 of the substrate
20 to be connected to the power supply pattern 25G.
[0154] FIG. 36 is a cross-sectional view illustrating the
configuration of an electronic circuit package 15B according to the
first modification of the fifth embodiment.
[0155] The electronic circuit package 15B according to the
modification differs from the electronic circuit package 15A
illustrated in FIG. 35 in that a thin insulating film 70 is
interposed between the upper and side surfaces 41 and 42 of the
magnetic mold resin 40 and the soft magnetic metal film 90. By
interposing the insulating film 70, it is possible to prevent
deterioration in magnetic characteristics due to an eddy current
loss.
Sixth Embodiment
[0156] FIG. 37 is a cross-sectional view illustrating the
configuration of an electronic circuit package 16A according to a
sixth embodiment of the present invention.
[0157] As illustrated in FIG. 37, the electronic circuit package
16A according to the present embodiment differs from the electronic
circuit package 13A according to the third embodiment illustrated
in FIG. 19 in that the soft magnetic metal film 90 is additionally
provided between the upper surface 41 of the magnetic mold resin 40
and the metal film 60. Other configurations are the same as those
of the electronic circuit package 13A according to the third
embodiment, so the same reference numerals are given to the same
elements, and overlapping description will be omitted.
[0158] The electronic circuit package 16A according to the present
embodiment uses the magnetic mold resin 40, and the surface of the
magnetic mold resin 40 is covered with a laminated structure of the
soft magnetic metal film 90 and metal film 60, thus obtaining a
triple composite shield structure.
[0159] FIG. 38 is a cross-sectional view illustrating the
configuration of an electronic circuit package 16B according to the
modification of the sixth embodiment.
[0160] The electronic circuit package 16B according to the
modification of the sixth embodiment differs from the electronic
circuit package 16A illustrated in FIG. 37 in that the soft
magnetic metal film 90 is also additionally provided between the
side surface 42 of the magnetic mold resin 40 and the metal film
60. Other configurations are the same as those of the electronic
circuit package 16A illustrated in FIG. 37, so the same reference
numerals are given to the same elements, and overlapping
description will be omitted.
[0161] The electronic circuit package 16B has a triple composite
shield structure in the side surface direction thereof as well,
thus making it possible to obtain a higher shield effect.
Seventh Embodiment
[0162] FIG. 39 is a cross-sectional view illustrating the
configuration of an electronic circuit package 17A according to a
seventh embodiment of the present invention.
[0163] As illustrated in FIG. 39, the electronic circuit package
17A according to the present embodiment differs from the electronic
circuit package 13A according to the third embodiment illustrated
in FIG. 19 in that the soft magnetic metal film 90 is formed on an
upper surface 61 of the metal film 60. Other configurations are the
same as those of the electronic circuit package 13A according to
the third embodiment, so the same reference numerals are given to
the same elements, and overlapping description will be omitted.
[0164] In the electronic circuit package 17A according to the
present embodiment, the upper surface 41 of the magnetic mold resin
40 is covered with a laminated structure of the metal film 60 and
soft magnetic metal film 90, thus obtaining a triple composite
shield structure.
[0165] FIG. 40 is a cross-sectional view illustrating the
configuration of an electronic circuit package 17B according to the
modification of the seventh embodiment.
[0166] The electronic circuit package 17B according to the
modification of the seventh embodiment differs from the electronic
circuit package 17A illustrated in FIG. 39 in that the soft
magnetic metal film 90 further covers a side surface 62 of the
metal film 60. Other configurations are the same as those of the
electronic circuit package 17A illustrated in FIG. 39, so the same
reference numerals are given to the same elements, and overlapping
description will be omitted.
[0167] The electronic circuit package 17B has a triple composite
shield structure in the side surface direction thereof as well,
thus making it possible to obtain a higher shield effect.
Eighth Embodiment
[0168] FIG. 41 is a cross-sectional view illustrating the
configuration of an electronic circuit package 18A according to an
eighth embodiment of the present invention.
[0169] As illustrated in FIG. 41, the electronic circuit package
18A according to the present embodiment differs from the electronic
circuit package 15A according to the fifth embodiment illustrated
in FIG. 35 in that the soft magnetic metal film 90 is formed only
on the upper surface 41 of the magnetic mold resin 40 and does not
cover the side surface 42 of the magnetic mold resin 40 and the
side surface 27 of the substrate 20. Other configurations are the
same as those of the electronic circuit package 15A according to
the fifth embodiment, so the same reference numerals are given to
the same elements, and overlapping description will be omitted.
[0170] In the electronic circuit package 18A according to the
present embodiment, a double composite shield structure can be
obtained by the magnetic mold resin 40 and soft magnetic metal film
90. Further, the soft magnetic metal film 90 is not connected to
the power supply pattern 25G, thereby simplifying the production
process.
[0171] While the preferred embodiments of the present invention
have been described, the present invention is not limited thereto.
Thus, various modifications may be made without departing from the
gist of the invention, and all of the modifications thereof are
included in the scope of the present invention.
* * * * *