U.S. patent application number 15/346025 was filed with the patent office on 2018-05-10 for system for detection of a photon emission generated by a device and methods for detecting the same.
The applicant listed for this patent is Globalfoundries Singapore Pte. Ltd.. Invention is credited to Jeffrey Chor-Keung Lam, Zhihong Mai, Pik Kee Tan, Huei Hao Yap, Lei Zhu.
Application Number | 20180128874 15/346025 |
Document ID | / |
Family ID | 62046126 |
Filed Date | 2018-05-10 |
United States Patent
Application |
20180128874 |
Kind Code |
A1 |
Zhu; Lei ; et al. |
May 10, 2018 |
SYSTEM FOR DETECTION OF A PHOTON EMISSION GENERATED BY A DEVICE AND
METHODS FOR DETECTING THE SAME
Abstract
A system for detection of a photon emission generate by a device
of an integrated circuit, and methods for detecting the same are
provided. The system includes a device space configured to include
the device. The system further includes an electrical probe
proximate the device space and configured to couple to the device.
The electrical probe is configured to induce the device to generate
the photon emission. The system further includes an optical fiber
having a first end proximate the device space and a second end
spaced from the first end. The first end is configured to receive
the photon emission generated by the device. The optical fiber is
configured to transmit the photon emission from the first end to
the second end. The system further includes a detector in
communication with the second end of the optical fiber and
configured to detect the photon emission transmitted by the optical
fiber.
Inventors: |
Zhu; Lei; (Singapore,
SG) ; Tan; Pik Kee; (Singapore, SG) ; Mai;
Zhihong; (Singapore, SG) ; Yap; Huei Hao;
(Singapore, SG) ; Lam; Jeffrey Chor-Keung;
(Singapore, SG) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Globalfoundries Singapore Pte. Ltd. |
Singapore |
|
SG |
|
|
Family ID: |
62046126 |
Appl. No.: |
15/346025 |
Filed: |
November 8, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G01R 31/307 20130101;
G01R 31/311 20130101; G01R 31/2894 20130101 |
International
Class: |
G01R 31/311 20060101
G01R031/311; G01R 31/307 20060101 G01R031/307; G01R 31/28 20060101
G01R031/28 |
Claims
1. A system for detection of a photon emission generated by a
device of an integrated circuit, said device comprising a drain
region, a gate, and source region, said system comprising: a device
space configured to comprise the device when the device is present;
a first electrical probe proximate said device space, and
configured to couple to the drain region and to induce the device
to generate the photon emission when the device is present; a
second electrical probe proximate said device space, and configured
to couple to the gate and to induce the device to generate the
photon emission when the device is present; a third electrical
probe proximate said device space, and configured to be coupled to
the source region and to induce the device to generate the photon
emission when the device is present; an optical fiber having a
first end proximate said device space and a second end spaced from
said first end with said first end configured to receive the photon
emission generated by the device when the device is present and
said optical fiber configured to transmit the photon emission from
said first end to said second end; and a detector in communication
with said second end of said optical fiber and configured to detect
the photon emission transmitted by said optical fiber.
2. The system of claim 1 further comprising an imaging component
configured to image the device, and to generate an image signal in
response to imaging the device.
3. The system of claim 2, wherein said imaging component has a
lateral resolution of at least 300 nanometers.
4. The system of claim 2, wherein said imaging component comprises
a scanning electron microscope.
5. The system of claim 4, wherein said scanning electron microscope
comprises an electron beam column, and said electron beam column is
configured to be spaced from the device in an amount of no greater
than 100 millimeters.
6. The system of claim 1, wherein said electrical probe is further
configured to transmit an electrical signal to said device to
induce said device to generate said photon emission in response to
said electrical signal.
7. The system of claim 1, wherein said electrical probe comprises a
tip proximate said device space and configured to couple to the
device with said tip having a diameter of no greater than 100
nanometers.
8. The system of claim 1, wherein said electrical probe is
configured to directly couple to the device.
9. The system of claim 1, wherein said optical fiber has a length
extending between said first end and second end with said first end
of said optical fiber comprising a surface at an angle of from 1 to
89 degree(s) relative to said length of said optical fiber such
that said surface is configured to be parallel to the device.
10. (canceled)
11. The system of claim 1, wherein said first end of said optical
fiber comprises a conductive material.
12. The system of claim 11, wherein said conductive material
comprises platinum.
13. The system of claim 1 further comprising a chamber configured
to contain at least the device, said electrical probe, said imaging
component, and said optical fiber.
14. The system of claim 13, wherein said chamber comprises a
feedthrough with said optical fiber extending through said
feedthrough for communicating with said detector.
15. A method for detecting a photon emission generated by a device
of an integrated circuit, said device comprising a drain region, a
gate, and source region, said method comprising: coupling a first
electrical probe to the drain region; coupling a second electrical
probe to the gate; coupling a third electrical probe to the source
region; positioning an optical fiber proximate the device;
transmitting an electrical signal through at least one of the first
electrical probe, the second electrical probe, and the third
electrical probe, to the device to induce the device to generate
the photon emission in response to the electrical signal; and
detecting the photon emission by a detector through the optical
fiber.
16. The method of claim 15 further comprising the steps of imaging
the device by an imaging component to generate an image signal in
response to imaging the device.
17. The method of claim 16, wherein the imaging component comprises
an electron beam column, and said method further comprises the step
of disposing the electron beam column adjacent the device such that
the electron beam column is spaced from the device in an amount of
no greater than 100 millimeters.
18. The method of claim 15 further comprising the steps of:
disposing the device on a stage; and positioning the stage relative
to the electrical probe to align the device with the electrical
probe.
19. The method of claim 15, wherein the step of coupling the
electrical probe to the device includes the steps of: positioning
the electrical probe proximate the device to align the electrical
probe with the device; and disposing the electrical probe on the
device.
20. The method of claim 15, wherein the optical fiber comprises a
surface proximate the device, and said method further comprising
the step of positioning the surface parallel to the device.
Description
TECHNICAL FIELD
[0001] The technical field generally relates to a system for
detection of a photon emission generated by a device, and methods
for detecting the same.
BACKGROUND
[0002] The semiconductor industry is continuously moving toward the
fabrication of smaller and more complex microelectronic devices
with higher performance. The production of smaller integrated
circuits requires the development of smaller electronic devices,
and closer spacing of those electronic devices within the
integrated circuits. After fabrication, many of these integrated
circuits undergo a quality analysis to detect failed devices within
the integrated circuit. A common indicator for a failed device is a
photon emission by the device. Emission microscopy techniques, such
as optical microscopy, have been used to detect the photon emission
by these failed devices down to a resolution of 2 .mu.m. More
recently, other techniques have been developed to detect the photon
emission, such as imaging systems utilizing a solid immersion lens
with a resolution of 730 nm, or imaging systems utilizing a Fresnel
lens with a resolution of 360 nm.
[0003] However, devices are now fabricated at sizes well beyond the
resolution of the emission microscopy techniques described above.
Further, photon emissions by these devices are decreased due to
lower working voltages of the devices. Even if a photon emission is
detected, determining the specific device attributed to the
emission becomes challenging due to resolution limitations. As a
result, the ability to detect failed devices is hindered, which in
turn may negatively impact quality and operation of the device.
[0004] Accordingly, it is desirable to provide a system for
detection of a photon emission generated by a device, and methods
for detecting the same. Moreover, other desirable features and
characteristics of the present embodiment will become apparent from
the subsequent detailed description and the appended claims, taken
in conjunction with the accompanying drawings and this background
of the invention.
BRIEF SUMMARY
[0005] A system for detection of a photon emission generated by a
device of an integrated circuit, and methods for detecting the same
are provided herein. The system includes a device space configured
to include the device when the device is present. The system
further includes an electrical probe proximate the device space and
configured to couple to the device when the device is present. The
electrical probe is configured to induce the device to generate the
photon emission when the device is present. The system further
includes an optical fiber having a first end proximate the device
space and a second end spaced from the first end. The first end is
configured to receive the photon emission generated by the device
when the device is present. The optical fiber is configured to
transmit the photon emission from the first end to the second end.
The system also includes a detector in communication with the
second end of the optical fiber and configured to detect the photon
emission transmitted by the optical fiber.
[0006] The method includes coupling an electrical probe to a
device. An optical fiber is disposed proximate the device. An
electrical signal is transmitted through the electrical probe to
the device to induce the device to generate the photon emission in
response to the electrical signal. The photon emission is detected
by a detector through the optical fiber.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] The present embodiments will hereinafter be described in
conjunction with the following drawing figures, wherein like
numerals denote like elements, and wherein:
[0008] FIG. 1 is a schematic illustrating a non-limiting embodiment
of a system for detection of a photon emission generated by a
device of an integrated circuit;
[0009] FIG. 2 is an image from a scanning electron microscope of a
non-limiting embodiment of the system and the device of FIG. 1;
[0010] FIG. 3 is a perspective view illustrating a non-limiting
embodiment of the system of FIG. 1; and
[0011] FIG. 4 is a flow chart illustrating a non-limiting
embodiment of a method for detecting the photon emission generated
by the device utilizing the system of FIG. 1.
DETAILED DESCRIPTION
[0012] The following detailed description is merely exemplary in
nature and is not intended to limit the various embodiments or the
application and uses thereof. Furthermore, there is no intention to
be bound by any theory presented in the preceding background or the
following detailed description. Embodiments of the present
disclosure are generally directed to integrated circuits and
methods for fabricating the same. The various tasks and process
steps described herein may be incorporated into a more
comprehensive procedure or process having additional steps or
functionality not described in detail herein. In particular,
various steps in the manufacture of integrated circuits are
well-known and so, in the interest of brevity, many conventional
steps will only be mentioned briefly herein or will be omitted
entirely without providing the well-known process details.
[0013] A system for detection of a photon emission generated by a
device of an integrated circuit is provided herein. In an exemplary
embodiment, the system includes an electrical probe configured to
couple to the device with the electrical probe further configured
to induce the device to generate a photon emission. In this
exemplary embodiment, the system further includes an optical fiber
configured to be proximate the device with the optical fiber
further configured to receive the photon emission generated by the
device. In this exemplary embodiment, the system also includes an
imaging component, such as SEM, TEM, or AFM, that has a resolution
in the nanometer range. The resolution of the imaging component can
determine the spatial resolution of the whole system. In this
exemplary embodiment, the imaging component is configured to locate
the device on the integrated circuit. Further, in this exemplary
embodiment, the imaging component is configured to facilitate
positioning of the electrical probe proximate the device and to
facilitate coupling of the electrical probe to the device.
Moreover, in this exemplary embodiment, the imaging component is
configured to facilitate positioning of the optical fiber proximate
the device and/or the photon emission for receiving the photo
emission.
[0014] A greater understanding of the system described above and of
the method for detecting the photon emission generated by the
device may be obtained through a review of the illustrations
accompanying this application together with a review of the
detailed description that follows.
[0015] A system 10 for detection of a photon emission generated by
a device 12 of an integrated circuit 14 will now be described with
reference to FIGS. 1-3. The integrated circuit 14 includes a
semiconductor material. The semiconductor material may be any
semiconductor material that is known for industrial use in
electronic devices including monocrystalline silicon materials,
polycrystalline silicon materials, and silicon admixed with other
elements such as germanium, carbon, and the like. Examples of the
semiconductor material include, but are not limited to, those
chosen from silicon, silicon germanium (SiGe), germanium (Ge),
gallium arsenide (GaAs), or indium phosphide (InP). An exemplary
semiconductor material is a silicon substrate. The silicon
substrate may be a bulk silicon wafer or may be a thin layer of
silicon on insulating layer (commonly known as silicon-on-insulator
or SOI) that, in turn, is supported by a carrier wafer. The device
12 may be a transistor, a memory device, a resistor, a capacitor,
or the like. The device 12 may have a size of no greater than 300,
alternatively no greater than 100, or alternatively no greater than
50, nanometers (nm). However, it is to be appreciated that the
device 12 may have any size known in the art for integrated
circuits. In certain embodiments, the size of the device 12 may be
referred to as the critical dimension of the device 12. In
embodiments, the photon emission has a spectral range of from
ultraviolet to far infrared. In certain embodiments, the photon
emission has a spectral range of from visible to far infrared. In
one exemplary embodiment, the photon emission has an infrared
spectral range. However, it is to be appreciated that the photon
emission may have any spectral range. For example, when the device
12 is a transistor including a failed gate oxide, the photon
emission emitted from the device 12 has a spectral range of from
700 nm to 900 nm.
[0016] Referring to FIGS. 1 and 2, the system 10 is configured for
use with the device 12 when the device 12 is present. More
specifically, each component of the system 12 described below is
configured for use with the device 12 when the device 12 is
present. To this end, the system 10 may be manufactured,
transported, and/or stored without the device 12 present. The
system 10 includes a device space 15 configured to include the
device 12. The system 12 further includes an electrical probe 16
proximate the device space 15. The electrical probe 16 is
configured to couple to the device 12. The term "couple" as
utilized herein with regard to the electrical probe 16 means that
the electrical probe 16 is directly or indirectly in contact with
the device 12. In certain embodiments, the electrical probe 16 is
configured to directly couple to the device 12. The electrical
probe 16 is configured to induce the device 12 to generate the
photon emission. In embodiments, the electrical probe 16 is further
configured to transmit an electrical signal to the device 12 to
induce the device 12 to generate the photon emission in response to
the electrical signal. The electrical probe 16 may include a tip 18
proximate the device space 15 and configured to couple to the
device 12 with the tip 18 having a diameter of no greater than 100,
alternatively no greater than 50, alternatively no greater than 25,
nm. In one exemplary embodiment, the tip 18 has a diameter of 40
nm. In another exemplary embodiment, the tip has a diameter of 20
nm. It is to be appreciated that as the diameter of the tip 18
decreases, the resolution of the electrical probe 16 increases. In
embodiments, the system 10 includes three electrical probes 16,
such as a first electrical probe 20, a second electrical probe 22,
and a third electrical probe 24. However, it is to be appreciated
that the system 10 can include any number of electrical probes 16
for inducing the device 12 to generate the photon emission in
response to the electrical signal. In one embodiment, the device 12
is a transistor including a source region 26, a drain region 28,
and a gate 30. In these embodiments, the first electrical probe 20
may be coupled to the drain region 28, the second electrical probe
22 may be coupled to the gate 30, and the third electrical probe 24
may be coupled to the source region 26.
[0017] The system 10 further includes an optical fiber 32 having a
first end 34 proximate the device space 15 and a second end 36
spaced from the first end 34. The first end 34 is configured to
receive the photon emission generated by the device 12 and the
optical fiber 32 is configured to transmit the photon emission from
the first end 34 to the second end 36. However, it is to be
appreciated that the system 10 can include any number of optical
fibers 32 for receiving and transmitting the photon emission. The
optical fiber 32 includes a core with a cladding overlying the
core. The optical fiber 32 may further include a jacket overlying
the cladding. In embodiments when the optical fiber 32 includes the
jacket, the first end 34 of the optical fiber 32 may be free of the
jacket such that the cladding is exposed. Without being bound by
theory, in embodiments, the first end 34 is free of the jacket to
minimize charging of the optical fiber 32 by components of the
system 10. In embodiments, a portion of the core proximate the
first end 34 has a diameter of no greater than 1000 micrometers
(.mu.m), alternatively no greater than 750 .mu.m, alternatively no
greater than 600 .mu.m, alternatively from 1000 .mu.m to 1 .mu.m,
alternatively from 850 .mu.m to 350 .mu.m, or alternatively from
750 .mu.m to 450 .mu.m. In one exemplary embodiment, the optical
fiber 32 has a diameter of 600 .mu.m. In embodiments, the core of
the optical fiber 32 has a numerical aperture (NA) of from 0.1 to
0.5. In one exemplary embodiment, the core of the optical fiber 32
has a NA of 0.22. However, it is to be appreciated that the optical
fiber 32 may have any NA known in the art for receiving and
transmitting photon emissions. The optical fiber 32 may be single
mode or multi-mode. In one exemplary embodiment, the optical fiber
is multi-mode.
[0018] In embodiments, the optical fiber 32 has a length extending
between the first end 34 and the second end 36 with the first end
34 of the optical fiber 32 including a surface 38. The surface 38
may be configured to be parallel to the device 12 such that the
surface 38 is configured to receive the photon emission. Without
being bound by theory, in embodiments, it is believed that
configuring the surface 38 to be parallel to the device 12 results
in maximizing receipt of the photon emission from the device 12. In
certain embodiments, the surface 38 is at an angle of from 1 to 89,
alternatively 10 to 80, alternatively 20 to 70, or alternatively 30
to 60, degree(s), each relative to the length of the optical fiber
32 such that the surface 38 and the device 12 are parallel to each
other. For example, in embodiments, when the length of the optical
fiber 32 is at an angle of 30 degrees relative to the device 12,
the surface 38 is at an angle of 60 degrees relative to the length
such that the surface 38 and the device 12 are parallel to each
other. As another example, in embodiments, when the length of the
optical fiber 32 is at an angle of 45 degrees relative to the
device 12, the surface 38 is at an angle of 45 degrees relative to
the length such that the surface 38 and the device 12 are parallel
to each other. In embodiments, the surface 38 has an angle of from
1 to 89 to render the surface 38 and the device 12 parallel to each
other while permitting the optical fiber 32 to receive the photon
emission in view of space constraints within the system 10. The
surface 38 may undergo polishing to form the surface 38 having an
angle of from 1 to 89 degrees relative to the length.
[0019] In embodiments, the first end 34 of the optical fiber 32
includes a conductive material. The conductive material may be
coated on the optical fiber 32, disposed within the optical fiber
32, or a combination thereof. In certain embodiments, the
conductive material is coated on the optical fiber 32. In an
exemplary embodiment, the conductive material includes platinum
(Pt). However, it is to be appreciated that other conductive
materials may be utilized, such as gold (Au). Without being bound
by theory, it is believed that the conductive material of the
optical fiber 32 may minimize charging of the optical fiber 32 by
components of the system 10.
[0020] In an exemplary embodiment, the optical fiber 32 includes a
conductive material and is polished to form the surface 38 having
an angle of from 1 to 89 degrees relative to the length. First, the
first end 34 of a first optical fiber is coated with the conductive
material including platinum by first removing the jacket from the
first end 34 to expose the cladding. Then, the exposed first end 34
is placed in a sputter coater with a platinum target, such as
BAL-TEC SCD005. Next, a first half of the first end 34 is coated
with platinum to a thickness of 15 nm utilizing the sputter coater
at a current of 30 mA and for a time duration of 200 second. Then,
the first end 34 is rotated 180 degrees to coat a second half of
the first end 34 with platinum to a thickness of 15 nm. Next, the
surface 38 of the coated first end 34 is polished and fused to a
second optical fiber to form the optical fiber 32.
[0021] The system 10 further includes a detector 40 in
communication with the second end 36 of the optical fiber 32. The
detector 40 is configured to detect the photon emission transmitted
by the optical fiber 32. In certain embodiments, the detector 40 is
further defined as an optical spectrometer configured to detect
photon emissions in a spectral range of from 600 nm to 1700 nm. An
example of a suitable detector includes a spectrophotometer
available from Horiba, under the trade name iHR320 with the DSS
InGaAs detector. In one embodiment, the photon emission detected by
the detector 40 is analyzed utilizing spectral analysis. In another
embodiment, the photon emission detected by the detector 40 is
analyzed utilizing time-resolved emission analysis to provide
switching dynamic characterization for debug and analysis of the
device 12. In embodiments, the detector 40 is configured to detect
various characteristics and/or properties of the photon emission,
such as photon counts, images, or a combination thereof. The
detector 40 is further configured to generate a detector signal in
response to detecting the photon emission. The detector signal may
be generated prior to analysis of the photon emission, after
analysis of the photon emission, or a combination thereof.
[0022] Referring to FIGS. 1 and 3, the system 10 further includes
an imaging component 42 configured to image the device 12. The
imaging component 42 may have a lateral resolution of at least 300,
alternatively at least 200, or alternatively at least 100, nm. It
is to be appreciated that a lower resolution size results in an
increased resolution of the component (e.g., a 100 nm resolution is
higher than a 200 nm resolution) such that a lateral resolution of
at least 100 nm includes 99 nm, 80 nm, 10 nm, etc. In one exemplary
embodiment, the imaging component 42 has a lateral resolution of 50
nm. The imaging component 42 is further configured to generate an
image signal in response to imaging the device 12.
[0023] In certain embodiments, the imaging component 42 includes a
scanning electron microscope (SEM). However, it is to be
appreciated that the imaging component 42 may include other
non-limiting microscopes, such as an atomic force microscope (AFM),
a transmission electron microscope (TEM), or an optical microscope
(OM), so long as the microscope has a lateral resolution of at
least 300 nm. The SEM may include an electron beam column 44
proximate the device space 15 and positioned transverse to the
device 12. In embodiments, the electron beam column 44 is
configured to be spaced from the device 12 in an amount of no
greater than 100, alternatively no greater than 50, or
alternatively no greater than 5, mm. While conventional detection
techniques (e.g., optical microscopy) cannot be utilized to detect
generation of the photon emission by the device 12 due to the space
constraints between the device 12 and the electron beam column 44,
the optical fiber 32 can be positioned proximate the device 12 and
utilized to receive and transmit the photon emission to the
detector 40. In embodiments, the electron beam column 44 is
configured to scan a focused electron beam over the device 12 to
image the device 12. During scanning of the focused electron beam,
the optical fiber 32 can become charged. As introduced above,
exposure of the cladding of the optical fiber 32 and inclusion of
the conductive material can minimize charging of the optical fiber
32.
[0024] Referring back to FIG. 1, in embodiments, the system 10
further includes a chamber 46 configured to contain at least the
device 12, the electrical probe 16, the imaging component 42, and
the optical fiber 32. The chamber 46 may be under a vacuum during
operation of the system 10. The chamber 46 may include a
feedthrough 48 with the optical fiber 32 extending through the
feedthrough 48 for communicating with the detector 40. In
embodiments, the feedthrough 48 may include an O-ring flange
configured to receive the optical fiber 32 while maintaining a
vacuum in the chamber 46.
[0025] Referring to FIGS. 1 and 3, in embodiments, the system 10
further includes a stage 50 configured to support the device 12.
The stage 50 may move laterally and/or vertically relative to the
imaging component 42 to align the device 12 with the imaging
component 42. The system 10 further includes a manipulator 52
coupled to each of the electrical probe 16 and the optical fiber
32. The manipulator 52 is configured to position the electrical
probe 16 and the optical fiber 32 proximate the device 12. It is to
be appreciated that the system 10 may include more than one
manipulator such that each electrical probe 16 and each optical
fiber can be positioned independent of each other. In certain
embodiments, the manipulator 52 has a resolution of at least 1
.mu.m, alternatively at least 100 nm, alternatively at least 50 nm,
or alternatively at least 5 nm. It is to be appreciated that a
lower resolution size results in an increased resolution of the
component (e.g., a 50 nm resolution is higher than a 100 nm
resolution). Therefore, a resolution of at least 100 nm includes 99
nm, 80 nm, 10 nm, etc.
[0026] In embodiments, the system 10 further includes a computer in
communication with various components of the system 10. The
computer may include a processor for computing tasks and a display
for displaying signals. The computer may be in communication with
the electrical probe 16 to transmit the electrical signal to the
device 12. The computer may be in communication with the
manipulator to position the electrical probe 16 and the optical
fiber 32 proximate the device 12. The computer may be in
communication with the imaging component 42 to analyze and/or
display the image signal generated by the imaging component 42. The
computer may be in communication with the detector 40 to analyze
and/or display the detector signal generated by the detector 40.
The computer may be in communication with the stage 50 to position
the stage 50 relative to the electrical probe 16 to align the
device 12 with the electrical probe 16.
[0027] A method for detecting the photon emission generated by the
device 12 will now be described with reference to FIG. 4 and
continuing reference to FIGS. 1-3. In embodiments, the method
includes the step of disposing the device 12 on the stage 50. In
embodiments, the method further includes the step of sealing the
chamber 46 and purging air from the chamber 46 to form a vacuum in
the chamber 46. In embodiments, the method further includes the
step of imaging the device 12 by the imaging component 42 to
generate an image signal in response to imaging the device 12. The
step of imaging the device 12 may include the step of disposing the
electron beam column 44 adjacent the device 12 such that the
electron beam column 44 is spaced from the device 12 in an amount
of no greater than 100 mm. In embodiments, the method also includes
the step of positioning the stage 50 relative to the electrical
probe 16 to align the device 12 with the electrical probe 16.
Positioning of the stage 50 typically provides a "rough" alignment
of the device 12 with the electrical probe 16. Positioning of the
stage 50 and thus positioning of the device 12 may be facilitated
utilizing the image signal generated by the imaging component
42.
[0028] The method further includes the step 54 of coupling the
electrical probe 16 to the device 12. The step 54 of coupling the
electrical probe 16 to the device 12 may include the step of
positioning the electrical probe 16 proximate the device 12 to
align the electrical probe 16 with the device 12. Positioning of
the electrical probe 16 typically provides a "precise" alignment of
the electrical probe 16 with the device 12. Positioning of the
electrical probe 16 may be facilitated utilizing the image signal
generated by the imaging component 42. The step 54 of coupling the
electrical probe 16 to the device 12 may further include the step
of disposing the electrical probe 16 on the device 12. The
electrical probe 16 may be disposed on any portion of the device 12
to induce the device 12 to generate the photon emission, such as
the source region 26, the drain region 28, the gate 30, etc. In
embodiments when the device 12 is a transistor and the system 10
includes three electrical probes 16, the first electrical probe 20
may be coupled to the drain region 28, the second electrical probe
22 may be coupled to the gate 30, and the third electrical probe 24
may be coupled to the source region 26.
[0029] The method also includes the step 56 of positioning the
optical fiber 32 proximate the device 12. The method may further
include the step of positioning the surface 38 of the optical fiber
32 parallel to the device 12. As described above, it is believed
that configuring the surface 38 to be parallel to the device 12
results in maximizing receipt of the photon emission from the
device 12. Positioning of the optical fiber 32 may be facilitated
utilizing the image signal generated by the imaging component
42.
[0030] The method further includes the step 58 of transmitting the
electrical signal through the electrical probe 16 to the device 12
to induce the device 12 to generate the photon emission in response
to the electrical signal. The method also includes the step 60 of
detecting the photon emission by the detector 40 through the
optical fiber 32. In embodiments, the method further includes
generating the detector signal in response to detecting the photon
emission. In embodiments, the method further includes displaying
the detector signal on the computer.
[0031] While at least one exemplary embodiment has been presented
in the foregoing detailed description, it should be appreciated
that a vast number of variations exist. It should also be
appreciated that the exemplary embodiments are only examples, and
are not intended to limit the scope, applicability, or
configuration of the application in any way. Rather, the foregoing
detailed description will provide those skilled in the art with a
convenient road map for implementing one or more embodiments, it
being understood that various changes may be made in the function
and arrangement of elements described in an exemplary embodiment
without departing from the scope, as set forth in the appended
claims.
* * * * *