U.S. patent application number 15/664947 was filed with the patent office on 2018-05-10 for sensing device.
The applicant listed for this patent is EPISTAR CORPORATION. Invention is credited to Kun-Wei KAO, Kunal KASHYAP, Meng-Lun TSAI.
Application Number | 20180128774 15/664947 |
Document ID | / |
Family ID | 62063711 |
Filed Date | 2018-05-10 |
United States Patent
Application |
20180128774 |
Kind Code |
A1 |
KASHYAP; Kunal ; et
al. |
May 10, 2018 |
SENSING DEVICE
Abstract
A sensing device includes a semiconductor structure, a
substrate, a first electrode and a second electrode, and a heater.
A sensing area arranged on the top side of the semiconductor
structure. The substrate is located under the bottom side of the
semiconductor. The first electrode and the second electrode are
arranged on the top side of the semiconductor structure. The heater
is disposed on the semiconductor structure and separated from the
sensing area by a distance less than 100 .mu.m.
Inventors: |
KASHYAP; Kunal; (Hsinchu,
TW) ; KAO; Kun-Wei; (Hsinchu, TW) ; TSAI;
Meng-Lun; (Hsinchu, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
EPISTAR CORPORATION |
Hsinchu |
|
TW |
|
|
Family ID: |
62063711 |
Appl. No.: |
15/664947 |
Filed: |
July 31, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62497108 |
Nov 7, 2016 |
|
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|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/3171 20130101;
G01N 27/414 20130101; G01N 27/02 20130101; G01N 27/4141 20130101;
H01L 29/1029 20130101; H01L 23/345 20130101; H01L 29/2003 20130101;
H01L 29/7786 20130101; H01L 29/7787 20130101; H01L 29/205
20130101 |
International
Class: |
G01N 27/414 20060101
G01N027/414 |
Claims
1. A sensing device, comprising: a semiconductor structure
comprising a top side, a bottom side opposite to the top side, and
a sensing area arranged on the top side; a substrate arranged under
the bottom side; a first electrode and a second electrode arranged
on the top side in a configuration to expose the sensing area; and
a heater disposed on the semiconductor structure and separated from
the sensing area by a distance of less than 100 .mu.m.
2. The sensing device according to claim 1, wherein the substrate
has a trench which is overlapped with the sensing area in a top
view.
3. The sensing device according to claim 2, wherein the substrate
has a thinner portion and a thicker portion surrounding the thinner
portion.
4. The sensing device according to claim 2, wherein the trench has
a top end where the heater is located, and an open end opposite to
the top end.
5. The sensing device according to claim 1, further comprising a
passivation layer covering the heater.
6. The sensing device according to claim 1, further comprising a
passivation layer sandwiched by the heater and the semiconductor
structure.
7. The sensing device according to claim 1, further comprising a
passivation layer formed in a loop configuration to enclose the
sensing area.
8. The sensing device according to claim 1, wherein the first
electrode and the second electrode are interdigitated with each
other in a top view.
9. The sensing device according to claim 1, wherein the
semiconductor structure has a recess formed on the top side where
the sensing area is located.
10. The sensing device according to claim 1, wherein the heater
comprises a meandering line.
11. A sensing device, comprising: a semiconductor structure
comprising a top side, a bottom side opposite to the top side, and
a sensing area arranged on the top side; a substrate arranged under
the bottom side; an electrode disposed on the top side to expose
the sensing area; and a heater disposed on the semiconductor
structure; wherein the sensing device has an operating current less
than 350 mA.
12. The sensing device according to claim 11, wherein the heater is
separated from the sensing area by a distance of less than 100
.mu.m.
13. The sensing device according to claim 11, wherein the heater is
located on the top side.
14. The sensing device according to claim 11, further comprising a
passivation layer sandwiched by the heater and the semiconductor
structure.
15. The sensing device according to claim 11, further comprising a
passivation layer formed in a loop configuration to enclose the
sensing area.
16. A sensing device, comprising: a semiconductor structure
comprising a top side, a bottom side opposite to the top side, and
a sensing area arranged on the top side; a substrate arranged under
the bottom side; an electrode disposed on the top side in a
configuration to expose the sensing area; and a heater disposed on
the semiconductor structure, wherein the sensing device has a
detection limit less than 10 ppm.
17. The sensing device according to claim 16, wherein the heater is
separated from the sensing area by a distance of less than 100
.mu.m.
18. The sensing device according to claim 16, wherein the heater is
located on the top side.
19. The sensing device according to claim 16, further comprising a
passivation layer sandwiched by the heater and the semiconductor
structure.
20. The sensing device according to claim 16, wherein the substrate
has a trench which is overlapped with the sensing area in a top
view.
Description
RELATED APPLICATION
[0001] This application claims the benefit of US Provisional
Application Ser. No. 62/497,108, filed on Nov. 7, 2016, which is
incorporated herein by reference in its entirety.
TECHNICAL FIELD
[0002] The present disclosure relates to a sensing device and
methods of making the same, and in particular to a sensing device
having an embedded heater.
DESCRIPTION OF THE RELATED ART
[0003] The development of a sensing device capable of obtaining
precise information within a short reacting time is required for
the booming IoT (Internet of Things) market. Particularly, efforts
to achieve high precision (low detection limit), low current
consumption (good power efficiency), low cost of a sensing device
has been continued to implement comfortableness of living spaces,
cope with a bad industrial environment, and manage food
manufacturing processes, etc.
[0004] A method widely used in sensing device for improving the
detection limit and shorten the reacting time is bonded an
additional heater to heat up the sensing device. Hence, the sensing
device reacts rapidly and accurately measures the concentration of
the substances while operating in high temperature. In addition,
the substances absorbed on the sensing devices are removed by
heating at the high temperature to recover the sensing device.
Therefore, the temperature characteristic of the sensing device
directly affects the detection limit, the reacting time, the
recovery time, and the like of the sensing device. However, the
heater providing the effective heating causes a high current
consumption and is not suitable in some application.
[0005] It is an object of the current disclosure to provide a
sensing device with an embedded heater to improve the detection
limit of the sensing device, and shorten the reacting and recovery
time under low current consumption operation.
SUMMARY OF THE DISCLOSURE
[0006] The following description illustrates embodiments and
together with drawings to provide a further understanding of the
disclosure described above.
[0007] A sensing device includes a semiconductor structure, a
substrate, a first electrode and a second electrode, and a heater.
A sensing area arranged on the top side of the semiconductor
structure. The substrate is located under the bottom side of the
semiconductor. The first electrode and the second electrode are
arranged on the top side of the semiconductor structure. The heater
is disposed on the semiconductor structure and separated from the
sensing area by a distance less than 100 .mu.m.
[0008] A sensing device includes a semiconductor structure, a
substrate, an electrode, and a heater. A sensing area arranged on
the top side of the semiconductor structure. The substrate is
located under the bottom side of the semiconductor. The electrode
is disposed on the top side of the semiconductor structure and
exposes the sensing area. The heater is disposed on the
semiconductor structure. The sensing device has an operating
current less than 350 mA.
[0009] A sensing device includes a semiconductor structure, a
substrate, an electrode, and a heater. The substrate is located
under the bottom side of the semiconductor. The electrode is
disposed on the top side of the semiconductor structure and exposes
the sensing area. The heater is disposed on the semiconductor
structure. The sensing device has a detection limit less than 10
ppm.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] FIG. 1A shows a top view of a sensing device in accordance
with an embodiment of the present disclosure.
[0011] FIG. 1B shows a bottom view of a sensing device shown in
FIG. 1A.
[0012] FIG. 1C shows a cross-sectional view taken along line A-A'
of a sensing device shown in FIG. 1A.
[0013] FIG. 1D shows a bottom view of a sensing device in
accordance with an embodiment of the present disclosure.
[0014] FIG. 2A.about.2E show bottom views of the heaters in
accordance with embodiments of the present disclosure.
[0015] FIG. 3 shows a cross-sectional view of a sensing device in
accordance with another embodiment of the present disclosure.
[0016] FIG. 4 shows a cross-sectional view of a sensing device in
accordance with another embodiment of the present disclosure.
[0017] FIG. 5A shows a top view of a sensing device in accordance
with another embodiment of the present disclosure.
[0018] FIG. 5B shows a cross-sectional view taken along line B-B'
of a sensing device shown in FIG. 5A.
[0019] FIGS. 6A.about.6F show steps of manufacturing a sensing
device in accordance with an embodiment of the present
disclosure.
[0020] FIG. 7A shows a top view of a sensing device in accordance
with an embodiment of the present disclosure.
[0021] FIG. 7B shows a cross-sectional view taken along line C-C'
of a sensing device shown in FIG. 7A.
[0022] FIG. 8A shows a top view of a sensing device in accordance
with an embodiment of the present disclosure.
[0023] FIG. 8B shows a cross-sectional view taken along line D-D'
of a sensing device shown in FIG. 8A.
[0024] FIG. 9 shows a cross-sectional view of a sensing device in
accordance with another embodiment of the present disclosure.
[0025] FIG. 10 shows a cross-sectional view of a sensing device in
accordance with another embodiment of the present disclosure.
[0026] FIG. 11 shows a top view of a sensing device in accordance
with another embodiment of the present disclosure.
[0027] FIGS. 12A.about.12D show steps of manufacturing a sensing
device in accordance with an embodiment of the present
disclosure.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0028] The drawings illustrate the embodiments of the application
and, together with the description, serve to illustrate the
principles of the application. The same name or the same reference
number given or appeared in different paragraphs or figures along
the specification should has the same or equivalent meanings while
it is once defined anywhere of the disclosure. The thickness or the
shape of an element in the specification can be expanded or
narrowed.
[0029] FIGS. 1A.about.FIG. 1C show sensing devices 100 in
accordance with embodiments of the present disclosure. FIG. 1A
shows a top view of the sensing device 100. FIG. 1B shows a bottom
view of the sensing device 100. FIG. 1C shows a partial
cross-sectional view taken along line A-A' in FIG. 1A. The sensing
device 100 is a field effect transistor (FET) which includes two
electrodes 31, 32 (for example, one is source electrode and another
is drain electrode), a functionalization layer 9, and a sensing
area 4 (not shown in FIG. 1A, underneath the functionalization
layer 9) disposed between two electrodes 31, 32. If the sensing
device 100 is exposed to an environmental medium (for example, air,
exhaust gas) which includes the substance(s) to be detected (target
substance), the target substance can react with the sensing area 4.
In detail, the target substance can accumulate on the sensing area
4, and the amount of the net surface charge on the sensing area 4
and the electric field between the sensing area 4 and the
electrodes 31, 32 are therefore changed. Hence, the sensing device
100 is operated in field effect transistor (FET) mode, and the
current (drain-source current) between the electrodes 31, 32 is
varied with the concentration of the target substance. The field
effect transistor (FET) of sensing device 100 may be selected from
the group consisting of a metal-oxide-semiconductor FET (MOSFET), a
metal-semiconductor FETs (MESFETs), and a high electron mobility
transistor (HEMT).
[0030] The target substance is H.sub.2, NH.sub.3, CO, SO.sub.N, NO,
NO.sub.2, CO.sub.2, CH.sub.4, acetone, ethanol, formaldehyde,
benzene such as toluene, etc. The target substance can exist in the
form of gas or liquid.
[0031] In one embodiment, the sensing device 100 is a HEMT. HEMT
structures can be used in a microwave power amplifier as well as a
gas or liquid sensing device because of their high two-dimensional
electron gas (2DEG) mobility and saturation velocity. As shown in
FIG. 1C, the sensing device 100 includes a substrate 1, a
hetero-junction structure 2 formed on the substrate 1, a source
electrode 31, and a drain electrode 32 located on the top side of
hetero-junction structure 2, a sensing area 4 also located on the
top side of the hetero-junction structure 2, and a heater 5 located
on the backside of the hetero-junction structure 2. The
hetero-junction structure 2 includes a first semiconductor layer 21
and a second semiconductor layer 22, and a 2DEG channel 23. The
first semiconductor layer 21 and the second semiconductor layer 22
are made of piezoelectric materials and have different bandgaps.
The 2DEG channel 23 can be formed at/around the interface of the
first semiconductor layer 21 and the second semiconductor layer 22
because of the piezoelectric and spontaneous polarization effects
induced there between. While the sensing device 100 operates to
detect the target substance, the source and drain electrodes are
connected to the 2DEG channel in an Ohmic contact type, and the
sensing area 4 connects the 2DEG channel in Schottky contact type.
If sensing area 4 is affected by the target substance, the target
substance can change the charges on the sensing area 4. Therefore,
the amount of the net surface charge changing on sensing area 4 can
alter the electron density in the 2DEG channel. The detecting
signal caused by the sensing area 4 can be amplified through the
drain-source current. The drain-source current is varied along the
change of the electron density in the 2DEG channel. In other words,
the drain-source current is varied along the concentration of the
target substance. Hence, the sensing device is very sensitive to
the target substance and the detecting signal can be easily
quantified, recorded, and transmitted.
[0032] The hetero-junction structure 2 can be made of a material
which can enable the generation of a 2DEG layer. The first
semiconductor layer 21 has at least one material different from the
second semiconductor layer 22, and a wide bandgap between the first
semiconductor layer 21 and the second semiconductor layer 22. Any
material, such as III-V group materials, suitable for forming a
heterojunction with 2DEG can be used to form the first
semiconductor layer 21 and the second semiconductor layer 22. In
order to change the 2DEG properties of heterojunction, the first
semiconductor layer 21 and the second semiconductor layer 22 can be
doped (for example with silicon) or un-doped. The first
semiconductor layer 21 and the second semiconductor layer 22 can be
made of gallium nitride (GaN), AlN, AlGaN,
Al.sub.yIn.sub.zGa.sub.(1-z)N (0<y<1, 0<z<1), or etc.
In one embodiment. the first semiconductor layer 21 can be made of
GaN and the second semiconductor layer 22 can be made of aluminum
gallium nitride (Al.sub.xGa.sub.(1-x)N), x=0.05.about.1. In other
embodiments, the hetero-junction structure 2 can be made of
material, such as AlGaN/InGaN/GaN, AlN/GaN, AlN/InGaN/GaN,
AlGaAs/GaAs, AlGaAs/InGaAs, InAlAs/InGaAs, and InGaP/GaAs. The
first semiconductor layer 21 has a thickness of a range
150.about.300 nm, for example 200 nm. The second semiconductor
layer 22 has a thickness of a range 15.about.45 nm, for example
25.about.35 nm.
[0033] Referring to FIG. 1A and FIG. 1C, the sensing area 4 is
separated from the electrodes 31, 32 by an insulating layer 8. The
electrode 31 or 32 has a thickness of 2.about.5 .mu.m, for example,
3 .mu.m. The electrode 31 or 32 is made of one or more metallic
materials, such as Au, Cu, Ti, Ni, Al, Pt, alloy thereof, or a
combination thereof. The insulating layer 8 is made of one or more
dielectric materials, such as, SiO.sub.2 or SiN.sub.x. The
insulating layer 8 has a thickness of a range 500.about.1500 .ANG.,
for example 700.about.1000 .ANG..
[0034] Optionally, the sensing device 100 includes a
functionalization layer 9 covering the sensing area 4. The
functionalization layer 9 is used to enhance catalytic dissociation
of the target substance. Specifically, the functionalization layer
9 can decompose one or more target substances in an environmental
medium and facilitate the target substances diffusing rapidly to
the sensing area 4. Hence the functionalization layer 9 is used to
improve the detection limit and/or selectivity of the sensing
device 100. The functionalization layer 9 is composed of one or
more suitable materials for the target substance, for example,
platinum is suitable for H.sub.2 detection. Other material of the
functionalization layer 9 can be platinum, palladium, gold, nickel,
iridium, or metal oxide like as SnO.sub.2, etc. The
functionalization layer 9 has a thickness of a range 5.about.40 nm,
for example 10.about.25 nm.
[0035] As shown in FIG. 1C, the substrate 1 has a trench 10 at the
bottom side opposite to the side where the hetero-junction
structure 2 resides. The trench 10 can have a smallest width which
is larger than the biggest width of the sensing area 4 in a
cross-sectional view. In more specific, the smallest width is the
width of the top end 11 of the trench 10. The sensing area 4 is
located right above the trench 10 and fully overlapped with the
trench 10. In a top view or a bottom view (as shown in FIG. 1A or
FIG. 1B), the trench 10 is located about the central part of the
sensing device 100. The trench 10 and the sensing area 4
substantially have similar shapes (example, a rectangle, a square)
in a top view or a bottom view.
[0036] As shown in FIG. 1C, the trench 10 penetrates the substrate
1. Hence, the depth of the trench 10 is substantially the same as
the thickness of the substrate 1. Referring to the FIG. 1C, the
substrate 1 has an inner surface 12 which surrounds the trench 10
and is inclined relative to the bottom surface of the
hetero-junction structure 2. Therefore, the bottom end of the
trench 10 has a width (area) which is larger than that of the top
end 11 of the trench 10. The width (area) of the trench 10
gradually increases from the top end 11 to the bottom end in a
cross-sectional view. In another embodiment, the inner surface 12
is perpendicular to the bottom surface of hetero-junction structure
2. The central part I of the sensing device 100 has a thickness
which is smaller than that of the outer part II. The
hetero-junction structure 2 located above the trench is not
directly supported by the substrate 1. The substrate 1 can be any
materials suitable for epitaxial growth, such as sapphire
(Al.sub.2O.sub.3), silicon carbide (SiC), or silicon (Si). In one
embodiment, the substrate 1 can be made of silicon (Si). The
substrate 1 has a thickness of a range 200.about.400 .mu.m, for
example 300 .mu.m.
[0037] As shown in FIG. 1D, in another embodiment, the trench 10
has a disc shape in the bottom view, and the sensing area 4 is
fully overlapped with the trench 10 in the bottom view or the top
view. The shape of the trench 10 in the bottom view is not limited
to rectangle or disc, can have other shapes same or different from
the sensing area 4, and the sensing area 4 is fully overlapped with
the trench 10 in the bottom view or the top view.
[0038] As shown in FIGS. 1A.about.1C, the heater 5 is located in
the trench 10 and disposed on the backside of the hetero-junction
structure 2 opposite to location where the electrodes and sensing
area 4 reside. In more detail, the heater 5 is formed on the top
end 11 of the trench 10. As shown in FIG. 1A and FIG. 1B, two ends
of the heater 5 are directly connected to the conducting pads 71,
72. The conducting pads 71 and 72 extend from the bottom side of
the sensing device 100 to the top side of the sensing device 100
via two conducting through holes (not shown). The pair of the
conducting pads 71, 72 can be electrically connected to an external
power supply (not shown). The conducting pads 71, 72 are near the
top side where the electrodes 31, 32 don't located, and the bottom
side which is opposite to the top side of the sensing device 100 in
the top view. The positions of the conducting pads 71, 72 are not
limited to the top and bottom side of the sensing device 100 and
can be arranged on any position of the sensing device 100 for
compatible layout. The shape of the conducting pads 71, 72
includes, but is not limited to, a circle, a square, or a
rectangle.
[0039] As shown in FIG. 1B and FIG. 1C, the heater 5 has a shape
like as a meandering line, and the two ends are arranged in
opposite sides. A plurality of the meandering portions 51 of the
heater 5 is near the left side and the right side which are the
sides the electrodes 31, 32 located thereon in the top view. The
plurality of the meandering portions 51 has a right angle at the
corner. In an embodiment (not shown), the plurality of the
meandering portions 51 of the heater 5 is near the top side and the
bottom side. The number of the meandering portions 51 can be varied
according to the width, the material, the thickness, or other
electrical parameters of the heater 5. In another embodiment, a
portion of the meandering portions 51 of the heater 5 is near the
left/right side and another portion of the meandering portions 51
of the heater 5 is near the top/bottom side. During operation, the
electrical current passes through the heater 5 via the pair of the
conducting pads 71, 72, and the heater 5 generates the heat to heat
up the hetero-junction structure 2 and thermal couples to the
sensing area 4. The more heat generated by the heater, the more
operating current is needed to drive the heater.
[0040] The heater 5 is embedded in the sensing device 100 without
bonding material or additional adhesive material. Moreover, the
substrate 1 is open in a space where the heater 5 located, and the
heat generated by the heater 5 can impose on the sensing area 4
without leaking to the substrate 1. The temperature of the sensing
area 4 is close to the temperature of the heater 5. In other words,
the heater 5 does not need to operate at high operating current,
the sensing area 4 can reach the estimated temperature due to less
heat leaking to the substrate. Hence, the consuming power of the
heater 5 can be decreased. The shortest distance between the heater
5 and the sensing area 4 is less than 500 nm, for example 350 nm,
300 nm. The sensing device overall has a lower operating current
due to the heater 5 with lower operating current. The operating
current of the sensing device in accordance with the present
disclosure is lower than 350 mA, for example lower than 200 mA, 150
mA, or 100 mA. The heater 5 is made of the material with the higher
thermal conductivity, higher electrical resistivity, and lower
coefficient of thermal expansion, such as Molybdenum (Mo),
Polysilicon, silicon carbide, Ti, Ni, Platinum (Pt), Au, Al,
Tungsten (W), SnO.sub.2, alloy thereof, or combinations thereof.
The resistivity of the heater 5 depends on the material, the width,
the length, the shape, and the thickness. The resistance of the
heater 5 has a range of the 40.about.120 ohm, for example
50.about.100 ohm, 60 ohm, or 74 ohm. The thickness, width, and
length of the heater 5 depend on the resistivity of the material of
the heater. In an embodiment, the thickness of the heater has a
range of the 1.about.10 .mu.m, for example 2.about.5 .mu.m, or 3
.mu.m.
[0041] A passivation layer 6 is located under and covers the heater
5. The passivation layer 6 can drive the heat generated from the
heater 5 to move upward to the sensing area 4 via the
hetero-junction structure 2. In other words, the passivation layer
6 can prevent the heat from going downward to the bottom side of
the sensing device. As shown in FIG. 1C, the top end 11 of the
trench 10 has a first portion 13 which is not covered by the heater
5, and a second portion 14 which is covered by the heater 5. The
passivation layer 6 can fully cover the trench 10 (including the
first portion 13 and the second portion 14). In other words, the
passivation layer 6 is fully overlapped with the trench 10 in the
bottom view or the top view. In one embodiment, the passivation
layer 6 has a contour substantially similar to the heater 5. Hence,
the first portion 13 is not fully covered by the passivation layer
6. In another embodiment, the passivation layer 6 covers the heater
5 and a portion of the first portion 13. Hence, a portion of the
first portion 13 is exposed and another portion of the first
portion 13 is covered by the passivation layer 6 in the bottom
view. The covering area of the passivation layer 6 can vary as long
as the heat generated from the heater 5 and moving upward to the
sensing area 4. The passivation layer 6 is made of the dielectric
material, such as, SiO.sub.2 or SiN.sub.x. In other words, the
distance between the heater 5 and the sensing area 4 is decreased
because the heater 5 is not separated from the hetero-junction
structure 2 by the substrate 1. Further, the passivation layer 6
can drive the heat to move toward the sensing area 4. Hence, the
heat wasted on the substrate would be decreased, and the power
consumption of the heater 5 can be lower. Consequently, the overall
power consumption of the sensing device can also be lower.
[0042] The shape of the heater 5 is not limited to a meandering
line and can have other geometry for increasing the heat
transferring to the sensing area 4 and the temperature uniformity
of the sensing area 4.
[0043] FIGS. 2A.about.2E show other embodiments of heaters with
different shapes. FIG. 2A shows a heater 5A which has a shape with
a meandering line with two ends located on the same side. The
heater 5A has a first portion 52A with a straight line and a second
portion 53A with a "zigzag" meandering line. The second portion 53A
has a plurality of the meandering portions 51A. The meandering
portion 51A has a right angle at corner (the bending angle is
substantially 90 degree). FIG. 2B shows another embodiment of the
heater 5B which has a shape with a meandering line similar to the
heater 5A. The heater 5B has a first portion 52B with a straight
line and a second portion 53B with a "zigzag" meandering line. The
second portion 53B has a plurality of the meandering portions 51B.
The meandering portion 51B has an arc shape at the turning point to
avoid the current accumulation at the turning point, and the
reliability and cracking issue. FIG. 2C shows a heater 5C which has
a shape with a double spiral. The heater 5C includes a first spiral
portion 52C and a second spiral portion 53C. The first spiral
portion 52C connects to the second spiral portion 53C via an
interconnecting portion 54C. The first spiral portion 52C or the
second spiral portion 53C has a plurality of the sectional lines
51C. The intersection of adjacent two sectional lines 51C has an
angle .theta. which faces the geometric center. The angle .theta.
is an obtuse angle to avoid the current accumulation at the
intersection. In another embodiment, the intersection of adjacent
two sectional lines 51C has an arc shape similar to FIG. 2B.
[0044] FIG. 2D shows a heater 5D which has a shape with circles.
The heater 5D has an inner circle 52D and an outer circle 53D which
are concentric with each other. The inner circle 52D and the outer
circle 53D collectively form a ring. A gap 51D is formed between
the interconnecting portions 54D which are used to connect the
inner and outer circles 52D, 53D. The number of circles in not
limited to the number exemplified herein and can include one or
more than two circles with a gap between the interconnecting
portions. And the plurality of the circles is concentric with each
other. FIG. 2E shows a heater 5E with another shape. The heater 5E
has an outer circle 53E and a disc 52E surrounded by the outer
circle 53E and located around the geometric center. Two
interconnecting portions 54E connect the outer circle 53E and the
round shape 52E. The heater is not limited to shapes described
above. The heater can have a shape with a combination of the
aforementioned shapes. The heater 5 is made of a material with a
higher electrical resistivity and a lower thermal conductivity,
such as gold (Au), aluminum (Al), polysilicon, platinum (Pt),
nickel (Ni), NiCr, molybdenum (Mo), tungsten (W), titanium (Ti),
silicon carbide, graphite, or alloy thereof. The conducting pads
71, 72 are made of one or more metallic materials. The metallic
material includes but not limited to Al, Cu, Au, Ag, Sn, Ti, Ni,
and an alloy thereof.
[0045] FIG. 3 shows a sensing device 300 in accordance with an
embodiment of the present disclosure. The sensing device 300 is
similar to the sensing device 100 shown in FIG. 1C, and includes a
substrate 1, a hetero-junction structure 2 formed on the substrate
1, electrodes 31, 32 located on the top side of hetero-junction
structure 2, a sensing area 4 located on the top side of the
hetero-junction structure 2. The hetero-junction structure 2
includes a first semiconductor layer 21 and a second semiconductor
layer 22, and forms a two-dimensional electron gas (2DEG) channel
23 between the first semiconductor layer 21 and a second
semiconductor layer 22. The substrate 1 has a trench 10. The trench
10 and the hetero-junction structure 2 are located on different
sides of the substrate 1. The heater 5 is formed on the top end 11
of the trench 10. The passivation layer 6 covers the heater 5. The
details width of the trench 10, the heater 5, and the passivation
layer 6 can refer to aforementioned descriptions related to FIG.
1C. The substrate 1 can be partially removed or thinned down to
form the trench 10 which does not pass through the substrate 10.
The substrate 1 shown in FIG. 3 includes a thicker portion 15 and a
thinner portion 16 surrounded by the thicker portion 15. The heater
5 is located in the trench 10 and formed on the thinner portion 16.
The thinner portion 16, for example, has a thickness of a range
30.about.100 .mu.m. The thicker portion 15, for example, has a
thickness of a range 200.about.400 .mu.m. In one embodiment, the
thickness of the thinner portion 16 is of 45.about.55 .mu.m, the
thickness of the thicker portion 15 is of 250.about.354 .mu.m. The
area of substrate 1 right above the heater 5 has a smaller
thickness, and the heat generated by the heater 5 can transfer to
the sensing area 4 through a shorter passage. The distance between
the heater 5 and the sensing area 4 is less than 100 .mu.m, for
example 80 .mu.m, 70 .mu.m, or 57 .mu.m. Hence, the heater does not
need to operate at higher operating current, and the sensing area 4
can reach the estimated temperature due to less heat leaking to the
substrate. The power consumption of the heater 5 can be saved.
Hence, the overall of the sensing device has a lower power
consumption due to the heater is operated at a lower operating
current level. The operating current of the sensing device 300 in
accordance with the present disclosure is lower than 350 mA, for
example, lower than 200 mA, 150 mA, or 100 mA. Optionally, the
sensing device 300 includes a functionalization layer 9 covering
the sensing area 4 to enhance the selectivity and the detection
limit. The functionalization layer 9 is separated from the
electrodes 31, 32 by an insulating layer 8. The details of the
elements described herein can refer to aforementioned paragraphs
directed to FIG. 1C.
[0046] FIG. 4 shows a sensing device 400 in accordance with an
embodiment of the present disclosure. The sensing device 400 is
similar to the sensing device 300 shown in FIG. 3, and includes a
substrate 1, a hetero-junction structure 2 formed on the substrate
1, electrodes 31, 32 located on an top side of hetero-junction
structure 2, a sensing area 4 located on the top side of the
hetero-junction structure 2. The hetero-junction structure 2
includes a first semiconductor layer 21 and a second semiconductor
layer 22, and can induce a 2DEG channel 23 between the first
semiconductor layer 21 and a second semiconductor layer 22. The
substrate 1 has a trench 10. The trench 10 and the hetero-junction
structure 2 are located on different sides of the substrate 1. The
heater 5 is formed on the top end 11 of the trench 10. The
passivation layer 6 covers the heater 5. The details of the trench
10, the heater 5, and the passivation layer 6 can refer to
aforementioned descriptions related to FIG. 1C. The second
semiconductor layer 22 shown in FIG. 4 has a recess 20 on the side
where the sensing area 4 resides. The second semiconductor layer 22
can be thinned down to form the recess 20 and the sensing area 4.
In more detail, the second semiconductor layer 22 has a thicker
portion 221 and a thinner portion 222 surrounded by the thicker
portion 221. The sensing area 4 is located on the thinner portion
222 and lower than the topmost surface of the second semiconductor
layer 22. The thinner portion 222 has a thickness of a range
5.about.15 nm. The thicker portion 221 has a thickness of a range
15.about.45 nm. In one embodiment, the thickness of the thinner
portion 222 is of 6.about.10 nm, the thickness of the thicker
portion 221 is of 25.about.35 nm.
[0047] The distance between the sensing area 4 and the 2DEG channel
23 is decreased due to the thin-down of the second semiconductor
layer 22. The electric field between the sensing area 4 and the
electrodes 31, 32 can be therefore caused a change by the target
substances even with a lower concentration; for example, the
concentration is less than 10 ppm. With a lower threshold of
changing the electric field, the sensing area 4 becomes to be
extremely sensitive to the ambient environment (gas). Hence, the
sensing device can have a lower detection limit. Optionally, the
sensing device 400 can include a functionalization layer 9 covering
the sensing area 4 to further increase the selectivity and the
detection limit. At least a portion of the functionalization layer
9 is surrounded by the second semiconductor layer 22. In one
embodiment, the topmost surface 91 of the functionalization layer 9
is lower than the topmost surface of the thicker portion 221 of the
second semiconductor layer 22. In another embodiment, the topmost
surface 91 of the functionalization layer 9 is higher than or
substantially coplanar to the topmost surface of the thicker
portion 221 of the second semiconductor layer 22.
[0048] FIGS. 5A.about.5B show a sensing device 500 in accordance
with an embodiment of the present disclosure. FIG. 5A shows the top
view of the sensing device 500. FIG. 5B shows a partial
cross-sectional view taken along line B-B' in FIG. 5A. The sensing
device 500 is similar to the sensing device 300 shown in FIG. 3 and
includes a substrate 1, a hetero-junction structure 2 formed on the
substrate 1, electrodes 31, 32 located on the top side of
hetero-junction structure 2, a sensing area 4 located on the top
side of the hetero-junction structure 2. The hetero-junction
structure 2 includes a first semiconductor layer 21 and a second
semiconductor layer 22, and can induce a 2DEG channel 23 between
the first semiconductor layer 21 and a second semiconductor layer
22. The substrate 1 has a trench 10. The trench 10 and the
hetero-junction structure 2 are located on different sides of the
substrate 1. The heater 5 is formed on the top end 11 of the trench
10. The passivation layer 6 covers the heater 5. The details of the
substrate 1, the heater 5, and the passivation layer 6 can refer to
aforementioned descriptions related to FIG. 1C, FIG. 3, or FIG. 4.
The electrodes 31, 32 are interdigitated with each other for
increasing the current spreading, called the interdigitated
electrodes (IDE), in the top view. As shown in FIG. 5A, the
electrode 31 has a first portion 311 close to a side 5001 of the
sensing device 500, and a plurality of extending portions 312. The
electrode 32 has a first portion 321 close to an opposite side 5002
of the sensing device 500, and a plurality of extending portions
322. The plurality of extending portions 312 of the electrode 31
extends from the first portion 311 toward but not contacting the
first portion 321 of the electrode 32. A terminal of each of the
plurality of the extending portions 312 is connected to the first
portion 311. The plurality of extending portions 322 of the
electrode 32 extends from the first portion 321 toward but not
contacting the first portion 311 of the electrode 31. A terminal of
each of the plurality of the extending portions 322 is connected to
the first portion 321. The extending portions 312, 322 have a shape
with a straight line substantially perpendicular to the first
portions 311, 321 respectively, but not limited to. Referring to
FIG. 5B, the extending portions 312 overlap at least a portion of
the extending portions 322 from an outmost side 5003 to another
outmost side 5004 opposite to the outmost side 5003 in the
cross-sectional view. In one embodiment, the extending portions
312, 322 have curved shapes. The width of the extending portions
312 is different from, or same as that of the first portion 311. In
one embodiment, the width of the extending portions 312 is smaller
than the first portion 311.
[0049] The electrode 31 is separated from the electrode 32 by a
non-zero distance. In more specific, an aisle 33 is formed between
the electrodes 31, 32 and has a meandering path. The sensing area 4
is distributed in the aisle 33 and separated from the electrodes
31, 32 by the insulating layer 8. Optionally, the sensing device
500 includes a functionalization layer 9 covering on the sensing
area 4 and located in the aisle 33. As shown in FIG. 5B, the
topmost surface of the electrodes 31, 32 are higher than that of
the functionalization layer 9. In another embodiment, the second
semiconductor layer 22 has a recess and includes a thinner portion
and a thicker portion similar to the sensing device 400 shown in
FIG. 4. Hence, the distance between the sensing area 4 and the
two-dimensional electron gas (2DEG) channel 23 can be decreased for
improving the detection limit.
[0050] FIGS. 6A.about.6F show steps of manufacturing a sensing
device in accordance with an embodiment of the present disclosure.
As shown in FIG. 6A, a substrate 1 is provided. The hetero-junction
structure 2 including a first semiconductor layer 21 and a second
semiconductor layer 22 is epitaxially grown on the substrate 1 by
deposition method, such us Metal Organic Chemical Deposition
(MOCVD) or molecular beam exitaxy (MBE). As shown in FIG. 6B, the
electrodes 31, 32 are formed on the hetero-junction structure 2.
Next, as shown in FIG. 6C, the insulating layer 8 is formed on the
electrodes 31, 32, and the hetero-junction structure 2. The
insulating layer 8 exposes a portion of the top surface of the
electrodes 31, 32 to electrically connect to the driving power, and
exposes a portion of the top surface of the hetero-junction
structure 2 to define the sensing area 4. Optionally, the second
semiconductor layer 22 of the hetero-junction structure 2 can be
thinned down by etching process to form a recess. Optionally, the
functionalization layer 9 is then deposited on the sensing area 4.
Then, as shown in FIG. 6D, the structure shown in FIG. 6C is
reversed and the substrate 1 is removed or thinned down by etching
to form the trench 10. Next, referring to FIG. 6E, the heater 5
with a pattern is formed on the top end 11 of the trench 10. Then,
referring to FIG. 6F, the passivation layer 6 is disposed to cover
the heater 5. At last, the structure is faced up to form a sensing
device.
[0051] FIGS. 7A.about.7B show a sensing device 600 in accordance
with an embodiment of the present disclosure. FIG. 7A shows the top
view of the sensing device 600. FIG. 7B shows a partial
cross-sectional view taken along line C-C' in FIG. 7A. The sensing
device 600 includes a substrate 1, a hetero-junction structure 2
formed on the substrate 1, electrodes 31, 32 located on the top
side of hetero-junction structure 2, a sensing area 4 located on
the top side of the hetero-junction structure 2. The
hetero-junction structure 2 includes a first semiconductor layer 21
and a second semiconductor layer 22, and can induce a 2DEG channel
23 between the first semiconductor layer 21 and a second
semiconductor layer 22. The heater 5 and the sensing area 4 are
located on the top side of hetero-junction structure 2. The heater
5 and the electrodes 31, 32 are separated and isolated from each
other by the insulating layer 8. The heater 5 has two terminals 51,
52 connected to the conducting pads 71, 72 which are located on the
top side of the hetero-junction structure 2. The passivation layer
6 is sandwiched by the heater 5 and the hetero-junction structure 2
to electrically isolate the heater 5 from the hetero-junction
structure 2. Referring to FIG. 7A, the heater 5, the sensing area
4, the electrodes 31, 32, and the conducting pads 71, 72 are on the
same side and on the top side of the hetero-junction structure
2.
[0052] The electrodes 31, 32 have a shape similar to the sensing
device 500 shown in FIG. 5A. The electrode 31 has a first portion
311 close to a side 6001 of the sensing device 600 and a plurality
of extending portions 312. The electrode 32 has a first portion 321
close to an opposite side 6002 of the sensing device 600 and a
plurality of extending portions 322. The plurality of extending
portions 312 of the electrode 31 extends from the first portion 311
toward but not contacting the first portion 321 of the electrode
32. A terminal of each of the plurality of the extending portions
312 is connected to first portion 311. The plurality of extending
portions 322 of the electrode 32 extends from the first portion 321
toward but not contacting the first portion 311 of the electrode
31. A terminal of each of the plurality of the extending portions
322 is connected to the first portion 321. In other words, the
electrodes 31, 32 are interdigitated with each other in the top
view. One of plurality of the extending portions 312 and one of
plurality of the extending portions 322 are aligned in a line and
separated by a non-zero distance in the top view. The plurality of
the extending portions 312 does not overlap with the plurality of
the extending portions 322 from the left side 6003 to the right
side 6004 in the top view. The electrode 31 and the electrode 32
are mirror symmetric with each other. The extending portion 312 has
a straight line perpendicular to the first portion 311. The
extending portion 322 has a straight line perpendicular to the
first portion 321. In another embodiment, the extending portion 312
(322) is not perpendicular to the first portion 311 (321).
[0053] As shown in FIG. 7A, the heater 5 and the sensing area 4 are
located in the area which is between the electrode 31 and the
electrode 32. The heater 5 has a first portion 54, a second portion
55, a third portion 56, and two terminals 51, 52. The third portion
56 connects the first portion 54 and the second portion 55. The
terminal 51 is located at an end of the first portion 54 which is
opposite to the third portion 56. The terminal 52 is located at an
end of the first portion 55 which is opposite to the third portion
56. The heater 5 is connected to the conducting pads 71, 72 via the
terminals 51, 52. The electrode 31 has an inner side 313 facing the
electrode 32, and the electrode 32 has an inner side 323 facing the
electrode 31. The first portion 54 of the heater 5 and the inner
side 313 have similar profiles, and the second portion 55 of the
heater 5 and the inner side 323 have similar profiles. In more
specific, the heater 5 forms in a shape similar to a loop with a
small opening 53 sandwiched by two terminals 51, 52. The heater 5
has a shape formed along the inner sides 313, 323 of the electrodes
31, 32. The area within the loop formed by the heater 5 is the
sensing area 4. The sensing area 4 is surrounded by the heater 5.
From the top view as shown in FIG. 7A, the heater 5 is adjacent to
the sensing area 4 by a distance close to zero.
[0054] Optionally, the functionalization layer 9 is formed on the
sensing area 4 to improve the detection limit and the selectivity,
such as the sensing device 700 shown in FIGS. 8A.about.8B. FIGS.
8A.about.8B show a sensing device 700 in accordance with an
embodiment of the present disclosure. FIG. 8A shows the top view of
the sensing device 700. FIG. 8B shows a partial cross-sectional
view taken along line D-D' in FIG. 8A. The sensing device 700 is
similar to the sensing device 600 shown in FIGS. 7A.about.7B. The
sensing device 700 includes a substrate 1, a hetero-junction
structure 2 formed on the substrate 1, electrodes 31, 32 located on
the top side of hetero-junction structure 2, a sensing area 4
located on the top side of the hetero-junction structure 2. The
heater 5 and the sensing area 4 are located on the top side of
hetero-junction structure 2. The heater 5 connects to the
conducting pads 71, 72. The heater 5 and the conducting pads 71, 72
are located on the top side of the hetero-junction structure 2. The
passivation layer 6 is sandwiched by the heater 5 and the
hetero-junction structure 2 to electrically isolate the heater 5
from the hetero-junction structure 2. The functionalization layer 9
is formed on the sensing area 4. The functionalization layer 9 and
the heater 5 (or the passivation layer 6) is separated by the
insulating layer 8. The distance between the heater 5 and the
sensing area 4 is less than 80 .mu.m in the top view, for example
70 .mu.m, 50 .mu.m, or 20 .mu.m. In the top view, as shown in FIG.
8A, the area surrounded by the heater 5 is slightly larger than the
area of the functionalization layer 9 (or the sensing area 4). As
shown in FIG. 8B, the thickness of the functionalization layer 9 is
thicker than that of the passivation layer 6. In another
embodiment, the thickness of the functionalization layer 9 is
thinner than that of the passivation 6. Optionally, there is no
insulating layer 8 formed between the functionalization layer 9 and
the heater 5 (or the passivation layer 6). Hence, the distance
between the functionalization layer 9 and the heater is close to
zero in the top view.
[0055] The substrate 1 of the sensing device 600, 700 can have a
trench 10 as shown in FIG. 9. FIG. 9 shows a partial
cross-sectional view of the sensing device 800 in accordance with
an embodiment of the present disclosure. The electrodes 31, 32,
heater 5, and the hetero-junction structure 2 can refer to the
descriptions directed to FIGS. 7A.about.7B and FIGS. 8A.about.8B.
The substrate 1 of the sensing device 800 is similar to that of the
sensing device 100, 200, 300, 400, or 500. The substrate 1 is
thinned down to form the trench 10 which is right under the sensing
area 4. The substrate 1 has a thinner portion 16 and a thicker
portion 15. The thinner portion 16 is surrounded by the thicker
portion 15. In another embodiment, the substrate 1 is partially
removed under the sensing area 4 to form the trench 10. The
substrate 1 which is thinned down or partially removed can avoid
the heat generated by the heater 5 from leaking to the substrate 1.
The heater 5 can cause the power consumption decreased, and the
sensing area 4 to reach the estimated temperature easily. Hence,
the operating current of the sensing device can be lower due to the
operating current of the heater is lower, for example less than 350
mA, 200 mA, or 100 mA.
[0056] In order to enhance the detection limit, the second
semiconductor layer 22 of the hetero-junction structure 2 can be
thinned down to form a recess, as shown in FIG. 4. FIG. 10 shows a
partial cross-sectional view of the sensing device 900 in
accordance with an embodiment of the present disclosure. The
details of the electrodes 31, 32, the heater 5, and the substrate 1
can refer to the aforementioned descriptions related to FIGS.
7A.about.7B, FIGS. 8A.about.8B, or FIG. 9. The second semiconductor
layer 22 shown in FIG. 10 includes a recess where the sensing area
4 resides. The second semiconductor layer 22 has a thicker portion
221 and a thinner portion 222 surrounded by the thicker portion
221. The sensing area 4 is lower than the topmost surface of the
second semiconductor layer 22 and surrounded by the second
semiconductor layer 22.
[0057] FIG. 11 shows a partial cross-sectional view of the sensing
device 1000 in accordance with an embodiment of the present
disclosure. The substrate 1, and the hetero-junction structure 2
can refer to aforementioned descriptions related to the sensing
device 600, 700, 800, or 900. The electrodes 31, 32, the heater 5,
and the sensing area 4 of the sensing device 1000 are located on
the top side of the hetero-junction structure 2 and concentric with
each other in the top view. Optionally, the functionalization layer
9 is formed on the sensing area 4 to enhance the selectivity and
the detection limit. Referring to FIG. 11, the electrodes 31, 32
collectively formed on a first virtual circle C1. The heater 5 is
formed on a second virtual circle C2 and the fourth virtual circle
C4. The sensing area 4 is formed a third virtual circle C3 and a
central area C5. C1, C2, C3, C4, and C5 are arranged in sequence
from outer to inner and concentric with each other in the top view.
The electrode 31 has a curved portion 311 close to a side 10001 of
the sensing device 1000. The electrode 32 has a curved portion 312
close to an opposite side 10002 of the sensing device 1000. The
curved portions 311, 312 are separated from each other and located
on the first virtual circle C1. The heater 5 has a first curved
portion 51, a second curved portion 52, a third portion 53, and the
interconnecting portions 54 connecting the first curved portion 51,
the second curved portion 52, and the third portion 53. The first
portion 51 and the second portion 52 are separated from each other
and located on the second virtual circle C2. The third portion 53
is located on the fourth virtual circle C4. The sensing area 4
includes a first portion 41 and a second portion 42 separated from
the first portion 41. The sensing area 4 is surrounded by the
heater 5. The first portion 41 of the sensing area 4 is sandwiched
by the first curved portion 51, the second curved portion 52, and
the third portion 53, and located on the third virtual circle C3.
The second portion 42 of the sensing area 4 has a circular shape
located on the central area C5 and is surrounded by fourth virtual
circle C4 where the third portion 53 of the heater 5 resides. The
electrodes 31, 32, heater 5, and the sensing area 4 are arranged to
decrease distances between the heater 5 and the sensing area 4 for
enhancing the current spreading. The arrangement of the electrodes
31, 32, heater 5, and the sensing area 4 is not limited to circular
and alternating configuration as exemplified herein.
[0058] FIGS. 12A.about.12C show steps of manufacturing a sensing
device 600 in accordance with an embodiment of the present
disclosure. As shown in FIG. 12A, a substrate 1 is provided and the
hetero-junction structure 2 including a first semiconductor layer
21 and a second semiconductor layer 22 is epitaxially grown on the
substrate 1 by deposition method, such us Metal Organic Chemical
Deposition (MOCVD) or molecular beam exitaxy (MBE). As shown in
FIG. 12B, the electrodes 31, 32 are formed on the hetero-junction
structure 2. Next, as shown in FIG. 12C, the insulating layer 8 is
formed on the electrodes 31, 32, and the hetero-junction structure
2. The passivation layer 6 and the heater 5 are deposited on the
hetero-junction with the specific pattern to define the region of
the sensing area 4. Optionally, the second semiconductor layer 22
of the hetero-junction structure 2 is thinned down to form a recess
before forming the passivation layer 6 and the heater 5. Then,
optionally, the functionalization layer 9 is deposited on the
sensing area 4. Next, as shown in FIG. 12D, optionally, the
substrate 1 is removed or thinned down by etching to form the
trench 10.
[0059] The sensor resistance (Rs) is the resistance between the two
electrodes, defined as
Rs=(V.sub.C.times.R.sub.L)/V.sub.out-R.sub.L. V.sub.C is the
voltage applied to the two electrodes. R.sub.L is the loading
resistor connected in series with the output terminal via one of
electrodes. The V.sub.out is the voltage across the load resistor
R.sub.L. The sensitivity .beta. of the sensing device is defined as
a ratio of a target sensor resistance to a reference sensor
resistance (change ratio of sensor resistance). For example, the
reference sensor resistance Rs (30 ppm) of the sensing device is
set to be the resistance value measured under the target substance
with 30 ppm concentration. The target sensor resistance Rs (100
ppm) of the sensing device is set to be the resistance value
measured under the target substances with 100 ppm concentration.
Then, the sensitivity of the sensing device can be presented as
.beta.=Rs (100 ppm)/Rs (30 ppm). V.sub.out varies in accordance to
the output current of the sensing device; hence, the sensitivity
also can be presented by the variation of the output current. When
the sensitivity .beta. is higher, the reading circuit connected to
the output of the sensing device is easier to read out without
complicated amplification. The detection limit is defined as the
minimum concentration of the target substance to trigger the
sensor. The detection limit of the embodiment aforementioned is
less than 10 ppm, for example less than 7 ppm, 5 ppm, 1 ppm, or 0.5
ppm.
[0060] It will be apparent to those having ordinary skill in the
art that various modifications and variations can be made to the
devices in accordance with the present disclosure without departing
from the scope or spirit of the disclosure. In view of the
foregoing, it is intended that the present disclosure covers
modifications and variations of this disclosure provided they fall
within the scope of the following claims and their equivalents.
* * * * *