U.S. patent application number 15/303855 was filed with the patent office on 2018-05-03 for integrated piezoelectric cantilever actuator and transistor for touch input and haptic feedback applications.
The applicant listed for this patent is SABIC GLOBAL TECHNOLOGIES B.V.. Invention is credited to Ibrahim AL-HOWAISH, Mahmoud M. ALMADHOUN, Redha BELLA, Jesus Alfonso Caraveo FRESCAS.
Application Number | 20180120938 15/303855 |
Document ID | / |
Family ID | 56137472 |
Filed Date | 2018-05-03 |
United States Patent
Application |
20180120938 |
Kind Code |
A1 |
FRESCAS; Jesus Alfonso Caraveo ;
et al. |
May 3, 2018 |
INTEGRATED PIEZOELECTRIC CANTILEVER ACTUATOR AND TRANSISTOR FOR
TOUCH INPUT AND HAPTIC FEEDBACK APPLICATIONS
Abstract
User feedback may be generated and user input received through a
single semiconductor component integrated into the electronic
device. The single semiconductor component may include a
piezoelectric cantilever actuator integrated with a transistor,
such as a thin-film transistor, such that the actuator is
electrically isolated from the transistor but mechanically attached
to the transistor. One manner of integration is to extend a
piezoelectric thin film of the actuator into a gate electrode stack
of the transistor. The cantilever actuator may be controlled to
provide haptic feedback. Separate from, and possibly simultaneously
with the control of the cantilever actuator, user input may be
received through the transistor integrated with the cantilever
actuator.
Inventors: |
FRESCAS; Jesus Alfonso Caraveo;
(Thuwal, SA) ; AL-HOWAISH; Ibrahim; (Thuwal,
SA) ; ALMADHOUN; Mahmoud M.; (Thuwal, SA) ;
BELLA; Redha; (Thuwal, SA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SABIC GLOBAL TECHNOLOGIES B.V. |
Bergen op Zoom |
|
NL |
|
|
Family ID: |
56137472 |
Appl. No.: |
15/303855 |
Filed: |
June 3, 2016 |
PCT Filed: |
June 3, 2016 |
PCT NO: |
PCT/IB2016/053279 |
371 Date: |
October 13, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62185506 |
Jun 26, 2015 |
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 41/1136 20130101;
H01L 41/094 20130101; G06F 3/016 20130101; G06F 3/014 20130101;
H01L 27/20 20130101; G06F 1/163 20130101; G06F 3/0414 20130101 |
International
Class: |
G06F 3/01 20060101
G06F003/01; G06F 3/041 20060101 G06F003/041; H01L 27/20 20060101
H01L027/20; H01L 41/09 20060101 H01L041/09; H01L 41/113 20060101
H01L041/113 |
Claims
1. An apparatus, comprising: a transistor comprising at least a
source electrode, a drain electrode, and a gate electrode; and a
cantilever actuator comprising a piezoelectric material, wherein
the cantilever actuator is electrically isolated but mechanically
connected to and integrated with the transistor through the gate
electrode of the transistor, wherein the cantilever actuator
comprises at least two electrodes separate from the source
electrode, the drain electrode, and the gate electrode, wherein the
at least two electrodes comprise a first electrode and a second
electrode, and wherein the at least two electrodes allow for
simultaneous actuating of the cantilever actuator separate from
accessing of the transistor through the source electrode, the drain
electrode, and the gate electrode.
2. The apparatus of claim 1, further comprising a sensing circuit
coupled to at least the source electrode, the drain electrode, and
the gate electrode of the transistor, wherein the sensing circuit
is configured to detect pressure applied to the cantilever actuator
by sensing a change in the threshold voltage of the transistor.
3. The apparatus of claim 2, wherein the piezoelectric material
comprises a pyroelectric material, and wherein the sensing circuit
is configured to detect a temperature of an environment around the
cantilever actuator.
4. The apparatus of claim 1, further comprising a haptic feedback
circuit coupled to the at least two electrodes of the cantilever
actuator.
5. The apparatus of claim 4, wherein the haptic feedback circuit is
configured to generate a direct current (DC) signal or an
alternating current (AC) signal to deflect the cantilever
actuator.
6. The apparatus of claim 5, wherein the haptic feedback circuit is
configured to to generate a direct current (DC) signal and simulate
a button raising from a surface.
7. The apparatus of claim 5, wherein the haptic feedback circuit is
configured to generate an alternating current (AC) signal and a
shake effect.
8. The apparatus of claim 1, wherein the cantilever actuator
comprises PVDF and/or the cantilever actuator comprises a load
attached at a distal end of the piezoelectric material from the
transistor.
9. The apparatus of claim 1, wherein the transistor comprises at
least one of a staggered bottom gate thin film transistor (TFT), a
coplanar bottom-gate TFT, a staggered top-gate TFT, and a coplanar
top-gate TFT.
10. The apparatus of claim 1, wherein the transistor and the
cantilever are integrated in a display device, wherein the display
device is part of an electronic device comprising at least one of a
mobile device, a cellular phone, a laptop, a tablet, a media
player, a global positioning system (GPS) device, and an e-book
reader.
11. The apparatus of claim 1, wherein the transistor further
comprises: a first semiconductor channel region; a second
semiconductor channel region; a dielectric layer over the first
semiconductor channel region and the second semiconductor channel
region; and a piezoelectric layer over the first semiconductor
channel region and the second semiconductor channel region, wherein
the gate electrode extends over the first semiconductor channel
region and over the second semiconductor channel region.
12. The apparatus of claim 11, wherein the first semiconductor
channel region comprises a p-type semiconductor, and where the
second semiconductor channel region comprises a n-type
semiconductor.
13. The apparatus of claim 12, further comprising: a first source
electrode coupled to the first semiconductor channel region; a
second source electrode coupled to the second semiconductor channel
region; and a drain electrode coupled to the first semiconductor
channel region and coupled to the second semiconductor channel
region.
14. The apparatus of claim 13, further comprising: a first sensor
circuit coupled to the first source electrode and the drain
electrode, wherein the first sensor circuit is configured to
measure a piezoelectric effect within the piezoelectric layer; and
a second sensor circuit coupled to the second source electrode and
the drain electrode, wherein the second sensor circuit is
configured to measure a pyroelectric effect within the
piezoelectric layer.
15. An electronic device capable of providing haptic feedback to a
user, the electronic device comprising: an array of haptic feedback
devices, wherein at least one haptic feedback device of the array
of haptic feedback devices comprises: a transistor comprising at
least a source electrode, a drain electrode, and a gate electrode;
and a cantilever actuator comprising a piezoelectric material,
wherein the cantilever actuator is electrically isolated but
mechanically connected to and integrated with the transistor
through the gate electrode of the transistor, wherein the
cantilever actuator comprises at least two electrodes separate from
the source electrode, the drain electrode, and the gate electrode,
wherein the at least two electrodes comprise a first electrode and
a second electrode, and wherein the at least two electrodes allow
for simultaneous actuating of the cantilever actuator separate from
accessing of the transistor through the source electrode, the drain
electrode, and the gate electrode.
16. The haptic feedback-enabled device of claim 15, further
comprising a processor coupled to the array of haptic feedback
devices, wherein the processor is configured to receive signals
from the array of haptic feedback devices and is configured to
determine a user input based on the received signals or the
processor is configured to determine a haptic feedback sensation to
provide to a user and configured to generate signals that when
provided to the array of haptic feedback devices cause the user to
receive the determined haptic feedback sensation.
17. The haptic feedback-enabled device of claim 15, further
comprising a display device, wherein the array of haptic feedback
devices is positioned above the display device.
18. A method, comprising: detecting, through a transistor, a change
in induced charge of a piezoelectric film of indicative of a user
input to an electronic device, wherein the piezoelectric film is
electrically isolated from the transistor but mechanically
connected to the transistor; determining, by a processor coupled to
the transistor, whether a pressure was to the sensor based, at
least in part, on the change in induced charge, wherein the change
in induced charge is determined based, at least in part, on a
threshold voltage of a transistor coupled to the piezoelectric
film; processing, by the processor, the user input based, at least
in part, on the determined pressure at the sensor; and performing,
by the processor, an operation based, at least in part, on the
received user input.
19. The method of claim 18, further comprising outputting a signal
to the piezoelectric film of the sensor, wherein the signal induces
movement an actuator of the sensor, wherein the signal comprises a
direct current (DC) signal selected to move the actuator a
determined distance or outputting a signal to the piezoelectric
film of the sensor, wherein the signal comprises an alternating
current (AC) signal selected to induce vibration in the
actuator.
20. The method of claim 18, wherein the step of detecting the
change in induced charge and the step of outputting the signal to
the piezoelectric film are performed simultaneously.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of priority of U.S.
Provisional Patent Application No. 62/185,506, filed Jun. 26, 2015,
which is hereby incorporated by reference in its entirety.
FIELD OF THE DISCLOSURE
[0002] The instant disclosure relates to user input and interaction
with electronic devices. More specifically, this disclosure relates
to processing user input and providing haptic feedback to a user
through a piezoelectric cantilever.
BACKGROUND
[0003] Electronic devices, particularly consumer electronics, must
interact with users of the devices by means for receiving input
from the user and means for providing output to the user.
Conventional forms of input include keyboard and mouse devices, but
also include newer touch screen devices. Conventional forms of
output include digital displays and toggle lights, but also include
newer liquid crystal display (LCD) technology.
[0004] Another form of output that many electronic devices provide
is haptic feedback. For example, many smartphones include a
rotating mass motor that vibrates when users touch the screen or to
indicate a notification of new email or incoming call. However,
this haptic feedback is extremely limited and is not localized to
any particular part of the smartphone. Further, the motor is a
large physical object that restricts smartphone design and limits
the ability of designers to reduce the thickness and other
dimensions of the smartphone. Additionally, the motor consumes
significant power in comparison to the capability provided by the
motor, particularly in comparison to the thin-film
semiconductor-based components within the smartphone.
[0005] Many of these same electronic devices rely on tactile
sensing for receiving input from the user. One conventional tactile
sensing technology is illustrated in FIG. 1. FIG. 1 is a
conventional smartphone with capacitive touchscreen. A smartphone
100 may include a rotating mass motor 110 for providing the haptic
feedback described above. The smartphone 100 may also include a
touch screen 120. A portion of the touch screen 120 is blown out to
show a profile of the screen 120, which includes a transparent
material 122. The transparent material 122 may be laid over sensors
124A-E. The sensors 124A-E may detect user input, such as force
applied to the transparent material 122, as changes in capacitance
at each of the sensors 124A-E. For example, a user pressing the
screen 120 near sensor 124C would cause a change in capacitance
126B, 126C, and 126D in the screen 120 detectable by sensors 124B,
124C, and 124D, respectively. A processor within the smartphone 100
may detect the change in capacitances 126B, 126C, and 126D and
correlate them with known x and y locations of the sensors 124B,
124C, and 124D to determine the user input location. The
configuration of motor 110 and touch screen 120 separates the user
input from the haptic feedback. Further, the haptic feedback is not
correlated with the touch screen 120 in that haptic feedback cannot
be delivered to particular locations of the touch screen 120.
[0006] Other conventional tactile sensing technologies include, for
example, resistive or piezoresistive sensors that process input
based on a resistance change as a function of the contact location
and/or applied force. These resistive sensors consume significant
amounts of power. They also can measure only one contact point and
cannot detect the amount of force applied. Another conventional
tactile sensing technology is a tunnel effect sensor that converts
stress into modulated current density by means of the quantum
tunneling effect. However they require a charge-couple device (CCD)
camera, which is bulky and difficult to integrate into an
electronic device. Yet another conventional tactile sensing
technology is a capacitive sensor, which detects input based on a
change of capacitance in a contact point. This technology provides
static detection, but lacks the ability to quantify the amount of
force or pressure applied. Yet other conventional tactile sensing
technologies include ultrasonic-based sensors, optical sensors, and
magnetism-based sensors. However, these sensors are all difficult
to integrate into electronic devices because of weight and size
issues.
[0007] Only some drawbacks to conventional electronic devices and
input and output to those devices are described above. However
these drawbacks illustrate a need for further improvements in user
input and user feedback to improve capability of electronic
devices, such as consumer smartphones, to interact with users.
SUMMARY
[0008] User feedback may be generated and user input received
through a single semiconductor component integrated into the
electronic device. The single semiconductor component may include a
piezoelectric cantilever actuator integrated with a transistor,
such as a thin-film transistor, such that the actuator is
electrically isolated from the transistor but mechanically attached
to the transistor. One manner of integration is to extend a
piezoelectric thin film of the actuator into a gate electrode stack
of the transistor. The piezoelectric thin film may generally be an
insulating material, such that metal films may be deposited around
a portion of the piezoelectric material away from the gate
electrode stack of the transistor. These metal films include two
electrodes to control deflection of the actuator without signals
applied to two electrodes affecting the transistor. Separate from,
and in some embodiments simultaneously with, the controlled
deflection of the actuator, the piezoelectric film that extends
into the gate electrode stack of the transistor may alter
electrical characteristics of the transistor based on a force
applied to the actuator. The extension of the piezoelectric film
into the transistor may induce charges at an interface of the gate
electrode stack of the transistor based on a force applied to the
actuator. The induced charges may cause a change in threshold
voltage of transistor, which may be detected through appropriate
circuitry coupled to the transistor.
[0009] The single semiconductor component integrating transistor
with cantilever actuator may be part of an array of such
components. For example, an array may span the integrated
components across multiple fingers of a glove or an array may span
the integrated components across a display device in a smartphone.
Such an array of integrated components may be coordinated by a
processor to provide touch feedback, such as simulating physical
buttons. This localized haptic feedback may be delivered by means
of static deflection, as buttons that pop out in the display, or by
vibration using the cantilever actuator. Such an array of
integrated components may also be used to receive user input, such
as user input that interacts with the raised button generated by
the cantilever actuator. The cantilever actuator can provide
multi-signal detection, such as force, pressure, vibration, and/or
temperature detection.
[0010] According to one embodiment, an apparatus may include a
transistor comprising at least a source electrode, a drain
electrode, and a gate electrode. The apparatus may also include a
cantilever actuator comprising a piezoelectric material, wherein
the cantilever actuator is electrically isolated but mechanically
connected to and integrated with the transistor through the gate
electrode of the transistor, wherein the cantilever actuator
comprises at least two electrodes separate from the source
electrode, the drain electrode, and the gate electrode, wherein the
at least two electrodes comprise a first electrode and a second
electrode, and wherein the at least two electrodes allow for
simultaneous actuating of the cantilever actuator separate from
accessing of the transistor through the source electrode, the drain
electrode, and the gate electrode.
[0011] According to another embodiment, an electronic device
capable of providing haptic feedback to a user is disclosed. The
electronic device may include an array of haptic feedback devices,
wherein at least one haptic feedback device of the array of haptic
feedback devices includes a transistor comprising at least a source
electrode, a drain electrode, and a gate electrode, and a
cantilever actuator comprising a piezoelectric material. The
cantilever actuator may be electrically isolated but mechanically
connected to and integrated with the transistor through the gate
electrode of the transistor. The cantilever actuator may include at
least two electrodes separate from the source electrode, the drain
electrode, and the gate electrode. Further, the at least two
electrodes may allow for simultaneous actuating of the cantilever
actuator separate from accessing of the transistor through the
source electrode, the drain electrode, and the gate electrode. The
electronic device may include a mobile device, a cellular phone, a
laptop, a tablet, a media player, a global positioning system (GPS)
device, an e-book reader, a patch, and/or a glove.
[0012] According to a further embodiment, a method may include
detecting, through a transistor, a change in induced charge of a
piezoelectric film of indicative of a user input to an electronic
device, wherein the piezoelectric film is electrically isolated
from the transistor but mechanically connected to the transistor;
determining, by a processor coupled to the transistor, whether a
pressure was to the sensor based, at least in part, on the change
in induced charge, wherein the change in induced charge is
determined based, at least in part, on a threshold voltage of a
transistor coupled to the piezoelectric film; processing, by the
processor, the user input based, at least in part, on the
determined pressure at the sensor; and/or performing, by the
processor, an operation based, at least in part, on the received
user input.
[0013] According to yet another embodiment, a method of
manufacturing the single semiconductor component for an electronic
device may include depositing a top gate structure on a substrate;
depositing an active semiconductor layer on the top gate structure
to form a stack; depositing source and drain electrodes on the
stack; depositing a piezoelectric layer on the stack; depositing a
top gate electrode on the piezoelectric layer on the stack; and/or
patterning the stack to form individual cells each comprising a
transistor and a cantilever actuator.
[0014] According to one embodiment, a method of operating an
electronic device with a single semiconductor component integrating
a transistor with a cantilever actuator may include receiving a
control signal from a processor indicating a type of haptic
feedback to provide to a user; generating a feedback signal
according to the indicated type of haptic feedback; and/or applying
the feedback signal to the first electrode and the second electrode
to induce the indicated type of haptic feedback in the cantilever
actuator. The type of haptic feedback may include simulating a
button on the display device and/or creating a vibration.
[0015] According to a further embodiment, an apparatus may include
a first semiconductor channel region; a second semiconductor
channel region; a dielectric layer over the first semiconductor
channel region and the second semiconductor channel region; a
piezoelectric layer over the first semiconductor channel region and
the second semiconductor channel region; and/or a gate electrode
over the first semiconductor channel region and the second
semiconductor channel region. The first semiconductor channel
region comprises a p-type semiconductor, and where the second
semiconductor channel region comprises a n-type semiconductor. The
apparatus may also include a first source electrode coupled to the
first semiconductor channel region; a second source electrode
coupled to the second semiconductor channel region; and/or a drain
electrode coupled to the first semiconductor channel region and
coupled to the second semiconductor channel region. The apparatus
may further include a first sensor circuit coupled to the first
source electrode and the drain electrode, wherein the first sensor
circuit is configured to measure a piezoelectric effect within the
piezoelectric layer; and/or a second sensor circuit coupled to the
second source electrode and the drain electrode, wherein the second
sensor circuit is configured to measure a pyroelectric effect
within the piezoelectric layer.
[0016] In the context of the present invention, twenty-four (24)
embodiments are described. Embodiment 1 includes an apparatus. The
apparatus includes a transistor comprising at least a source
electrode, a drain electrode, and a gate electrode; and a
cantilever actuator comprising a piezoelectric material, wherein
the cantilever actuator is electrically isolated but mechanically
connected to and integrated with the transistor through the gate
electrode of the transistor, wherein the cantilever actuator
comprises at least two electrodes separate from the source
electrode, the drain electrode, and the gate electrode, wherein the
at least two electrodes comprise a first electrode and a second
electrode, and wherein the at least two electrodes allow for
simultaneous actuating of the cantilever actuator separate from
accessing of the transistor through the source electrode, the drain
electrode, and the gate electrode. Embodiment 2 is the apparatus of
embodiment 1, further including a sensing circuit coupled to at
least the source electrode, the drain electrode, and the gate
electrode of the transistor, wherein the sensing circuit is
configured to detect pressure applied to the cantilever actuator by
sensing a change in the threshold voltage of the transistor.
Embodiment 3 is the apparatus of embodiment 2, wherein the
piezoelectric material includes a pyroelectric material, and
wherein the sensing circuit is configured to detect a temperature
of an environment around the cantilever actuator. Embodiment 4 is
the apparatus of any one of embodiments 1 to 3, further including a
haptic feedback circuit coupled to the at least two electrodes of
the cantilever actuator. Embodiment 5 is the apparatus of
embodiment 4, wherein the haptic feedback circuit is configured to
generate a direct current (DC) signal to deflect the cantilever
actuator. Embodiment 6 is the apparatus of embodiment 5, wherein
the haptic feedback circuit is configured to simulate a button
raising from a surface. Embodiment 7 is the apparatus of embodiment
4, wherein the haptic feedback circuit is configured to generate an
alternating current (AC) signal to deflect the cantilever actuator.
Embodiment 8 is the apparatus of embodiment 7, wherein the haptic
feedback circuit is configured to generate a shake effect.
Embodiment 9 is the apparatus of any one of embodiments 1 to 8,
wherein the cantilever actuator includes PVDF. Embodiment 10 is the
apparatus of any one of embodiments 1 to 9, wherein the cantilever
actuator includes a load attached at a distal end of the
piezoelectric material from the transistor. Embodiment 11 is the
apparatus of any one of embodiments 1 to 10, wherein the transistor
includes at least one of a staggered bottom gate thin film
transistor (TFT), a coplanar bottom-gate TFT, a staggered top-gate
TFT, and a coplanar top-gate TFT. Embodiment 12 is the apparatus of
any one of embodiments 1 to 11, wherein the transistor and the
cantilever are integrated in a display device, wherein the display
device is part of an electronic device comprising at least one of a
mobile device, a cellular phone, a laptop, a tablet, a media
player, a global positioning system (GPS) device, and an e-book
reader.
[0017] Embodiment 13 includes an electronic device capable of
providing haptic feedback to a user. The electronic device can
include an array of haptic feedback devices, wherein at least one
haptic feedback device of the array of haptic feedback devices
includes: a transistor comprising at least a source electrode, a
drain electrode, and a gate electrode; and a cantilever actuator
comprising a piezoelectric material, wherein the cantilever
actuator is electrically isolated but mechanically connected to and
integrated with the transistor through the gate electrode of the
transistor, wherein the cantilever actuator comprises at least two
electrodes separate from the source electrode, the drain electrode,
and the gate electrode, wherein the at least two electrodes
comprise a first electrode and a second electrode, and wherein the
at least two electrodes allow for simultaneous actuating of the
cantilever actuator separate from accessing of the transistor
through the source electrode, the drain electrode, and the gate
electrode. Embodiment 14 is the haptic feedback-enabled device of
embodiment 13, further including a processor coupled to the array
of haptic feedback devices, wherein the processor is configured to
receive signals from the array of haptic feedback devices and is
configured to determine a user input based on the received signals.
Embodiment 15 is the haptic feedback-enabled device of any one of
embodiment 13 to 14, further including a processor coupled to the
array of haptic feedback devices, wherein the processor is
configured to determine a haptic feedback sensation to provide to a
user and configured to generate signals that when provided to the
array of haptic feedback devices cause the user to receive the
determined haptic feedback sensation. Embodiment 16 is the haptic
feedback-enabled device of any one of embodiments 13 to 15, further
including a display device, wherein the array of haptic feedback
devices is positioned above the display device.
[0018] Embodiment 17 includes a method that can include detecting,
through a transistor, a change in induced charge of a piezoelectric
film of indicative of a user input to an electronic device, wherein
the piezoelectric film is electrically isolated from the transistor
but mechanically connected to the transistor; determining, by a
processor coupled to the transistor, whether a pressure was to the
sensor based, at least in part, on the change in induced charge,
wherein the change in induced charge is determined based, at least
in part, on a threshold voltage of a transistor coupled to the
piezoelectric film; processing, by the processor, the user input
based, at least in part, on the determined pressure at the sensor;
and performing, by the processor, an operation based, at least in
part, on the received user input. Embodiment 18 is the method of
embodiment 17, further including outputting a signal to the
piezoelectric film of the sensor, wherein the signal induces
movement an actuator of the sensor, wherein the signal comprises a
direct current (DC) signal selected to move the actuator a
determined distance. Embodiment 19 is the method of embodiment 17,
further including outputting a signal to the piezoelectric film of
the sensor, wherein the signal includes an alternating current (AC)
signal selected to induce vibration in the actuator. Embodiment 20
is the method of any one of embodiments 17 to 19, wherein the step
of detecting the change in induced charge and the step of
outputting the signal to the piezoelectric film are performed
simultaneously.
[0019] Embodiment 21 is the apparatus of any one of embodiments 1
to 12, wherein the transistor further includes a first
semiconductor channel region; a second semiconductor channel
region; a dielectric layer over the first semiconductor channel
region and the second semiconductor channel region; and a
piezoelectric layer over the first semiconductor channel region and
the second semiconductor channel region, wherein the gate electrode
extends over the first semiconductor channel region and over the
second semiconductor channel region. Embodiment 22 is the apparatus
of embodiment 21, wherein the first semiconductor channel region
comprises a p-type semiconductor, and where the second
semiconductor channel region includes a n-type semiconductor.
Embodiment 23 is the apparatus of any one of embodiments 21 to 22,
further including a first source electrode coupled to the first
semiconductor channel region; a second source electrode coupled to
the second semiconductor channel region; and a drain electrode
coupled to the first semiconductor channel region and coupled to
the second semiconductor channel region. Embodiment 24 is the
apparatus of embodiment 23, further including a first sensor
circuit coupled to the first source electrode and the drain
electrode, wherein the first sensor circuit is configured to
measure a piezoelectric effect within the piezoelectric layer; and
a second sensor circuit coupled to the second source electrode and
the drain electrode, wherein the second sensor circuit is
configured to measure a pyroelectric effect within the
piezoelectric layer.
[0020] The foregoing has outlined rather broadly certain features
and technical advantages of embodiments of the present invention in
order that the detailed description that follows may be better
understood. Additional features and advantages will be described
hereinafter that form the subject of the claims of the invention.
It should be appreciated by those having ordinary skill in the art
that the conception and specific embodiment disclosed may be
readily utilized as a basis for modifying or designing other
structures for carrying out the same or similar purposes. It should
also be realized by those having ordinary skill in the art that
such equivalent constructions do not depart from the spirit and
scope of the invention as set forth in the appended claims.
Additional features will be better understood from the following
description when considered in connection with the accompanying
figures. It is to be expressly understood, however, that each of
the figures is provided for the purpose of illustration and
description only and is not intended to limit the present
invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] For a more complete understanding of the disclosed system
and methods, reference is now made to the following descriptions
taken in conjunction with the accompanying drawings.
[0022] FIG. 1 is a conventional smartphone with capacitive
touchscreen.
[0023] FIG. 2 is an illustration showing a single semiconductor
component integrating a transistor with cantilever actuator
according to one embodiment of the disclosure.
[0024] FIG. 3 is a block diagram illustrating operation of the
single semiconductor component of FIG. 2 according to certain
embodiments of the disclosure.
[0025] FIGS. 4A-C are illustrations of electronic devices
integrating one or more single semiconductor components integrating
transistor with cantilever actuator according to certain
embodiments of the disclosure.
[0026] FIG. 5 is a flow chart illustrating a method of receiving
user input through a single semiconductor component integrating
transistor with cantilever actuator according to one embodiment of
the disclosure.
[0027] FIG. 6 are graphs illustrating electrical characteristics of
a transistor integrated with a cantilever actuator according to
certain embodiments of the disclosure.
[0028] FIG. 7 are graphs illustrating a change in threshold voltage
of a transistor integrated with a cantilever actuator based on
force applied to the cantilever actuator according to one
embodiment of the disclosure.
[0029] FIG. 8 is a graph illustrating determined force applied to a
cantilever actuator based on a change in threshold voltage of a
transistor integrated with the cantilever actuator according to one
embodiment of the disclosure.
[0030] FIG. 9 is a flow chart illustrating a method of providing
haptic feedback to a user through a single semiconductor component
integrating transistor with cantilever actuator according to one
embodiment of the disclosure.
[0031] FIGS. 10A-D are illustrations of various configurations for
a transistor of a single semiconductor component integrating
transistor with cantilever actuator according to certain
embodiments of the disclosure.
[0032] FIG. 11 is an illustration showing a complimentary
metal-oxide-semiconductor (CMOS)-like configuration of a single
semiconductor component integrating transistor with cantilever
actuator according to one embodiment of the disclosure.
DETAILED DESCRIPTION
[0033] FIG. 2 is an illustration showing a single semiconductor
component integrating a transistor with cantilever actuator
according to one embodiment of the disclosure. A single
semiconductor component 200 includes a cantilever actuator 230 and
a transistor 210, such as a thin film transistor (TFT). The
cantilever actuator 230 may include a piezoelectric film 240 that
extends from the cantilever actuator 230 into the transistor 210.
In particular, the piezoelectric film 240 may extend into a gate
electrode stack of the transistor 210, between a gate electrode 214
and the semiconductor channel 218. Because the piezoelectric film
240 is generally a poor conductor, the cantilever actuator 230 is
thus electrically isolated from the transistor 210 but mechanically
attached to the transistor 210.
[0034] The cantilever actuator 230 may also include a first
conducting layer 236, a second conducting layer 238, a first
electrode coupled to the first conducting layer 236, and a second
electrode coupled to the second conducting layer 238. Although the
first and second electrodes are referred to as structural elements,
the electrodes may be the first conducting layer 236 and the second
conducting layer 238 themselves. Alternatively, an additional
structure for a contact point may be attached to the first
conducting layer 236 and the second conducting layer 238, such as a
bonding pad. The first conducting layer 236 may be deposited on one
side of the piezoelectric film 240, and the second conducting layer
238 may be deposited on approximately an opposite side of the
piezoelectric film 240. The first and second conducting films 236
and 238 are coupled to the first electrode and the second
electrode, respectively. The first and second conducting films 236
and 238 may be electrically isolated from the transistor 210, such
that a signal may be applied to the first electrode and the second
electrode to cause the piezoelectric layer 240 to respond by, for
example, deflecting or vibrating. In one embodiment, the actuator
230 may include anchors 232 and 234 for anchoring the actuator 230
with the substrate 202.
[0035] The cantilever actuator 230 may have a load 242 (or
protrusion) to adjust vibration parameters such as amplitude and
frequency of the cantilever actuator 230. The load 242 may also be
used, such as when integrated in a display device, to act as a
physical button that pops out of the screen. When a direct current
(DC) voltage is applied to the first and second electrodes, the
piezoelectric film 240 deflects proportional to the magnitude of
the DC voltage. A DC signal may thus be applied to the first and
second electrodes that simulates a button raising from a surface of
a display device, which provides direct-to-skin feedback to a user.
When an alternating current (AC) voltage is applied to the first
and second electrodes, the piezoelectric film 240 vibrates with a
certain amplitude, phase, and frequency corresponding to the AC
signal. An AC signal may thus be applied to create a "shake" effect
in a localized area, such as a portion of a display device. By
altering the AC signal to vary the vibration parameters, different
sensations may be generated.
[0036] The single semiconductor component 200 may be constructed on
a substrate 202, such as glass, polycarbonate, PMMA, PET, PEN,
Polyimide, or any other transparent polymer or transparent
inorganic substrate. The electrodes 212, 214, 216, 236, and 238 may
be constructed from conductive transparent polymers such as
PEDOT:PSS, transparent conductive oxides such as ITO, AZO, F:SnO2
and zinc-based oxides, graphene and graphene-like materials,
metal-based nanowires and/or nanoparticles such as silver
nanowires, copper nanowires, carbon nanotubes and other
carbon-based structures, a metal mesh, or a nanomesh. Each of the
electrodes 212, 214, 216, 236, and 238 may be constructed from
different materials or some of the electrodes 212, 214, 216, 236,
and 238 may be construed from the same materials. The semiconductor
218 may be constructed from p-type materials such as SnO,
Cu.sub.2O, CuO, Ga:SnO.sub.2. Organic semiconductors such as
pentacene, and/or other small molecule materials or may be
constructed from n-type materials such as ZnO, IGZO, SnO.sub.2,
a-Si:H, zinc based materials, In.sub.2O.sub.3, and/or CdO. The
dielectric layer 220 may be constructed from oxide-based
dielectrics such as SiO.sub.2, TiO.sub.2, Al.sub.2O.sub.3,
HfO.sub.2, linear polymer dielectrics such as PMMA and SU-8, or
other insulating materials. The piezoelectric layer 240 may be
constructed from PVDF and its copolymers, such as PVDF-TrFE and
PVDF-TrFE-CFE, Parylene, PDMS, Polypropylene, voided charged
polymers, transparent nanocomposites, such as ZnO in a SU-8 matrix,
or other piezoelectric materials. In some embodiments, the
piezoelectric layer 240 may also exhibit pyroelectric effects
allowing use of the single semiconductor component 200 to detect
changes in temperature in the proximity of the component 200.
[0037] The transistor 210 may include a bilayer gate dielectric
including a dielectric material 220 and the piezoelectric film 240
that extends from the cantilever actuator 230. When the cantilever
actuator 230 is in its steady state with no applied strain, the
transistor 210 has a first threshold voltage (V.sub.T) and shows
equilibrium behavior. In particular, the transistor 210 exhibits,
during equilibrium behavior, no hysteresis such that the transfer
curve, which describes the behavior of the transistor 210, retraces
itself when multiple scans are performed. The following equation
describes the current that flows from a source electrode 212 to a
drain electrode 216 through a p-type semiconductor channel 218 when
a voltage is applied at the gate electrode 214:
I DS = - .mu. FE C ox W L [ ( V GS - V T ) V DS - 1 2 V DS 2 ] ,
##EQU00001##
where I.sub.DS is the source-to-drain current, .mu..sub.FE is field
effect mobility, C.sub.OX is the gate dielectric capacitance, W/L
is the width to length ratio of the semiconductor channel 218,
V.sub.GS is the gate voltage, V.sub.T is the threshold voltage, and
V.sub.DS is the source-to-drain voltage. Although a p-type
semiconductor channel 218 is described, the semiconductor channel
218 may also be n-type and similar equations derived to describe
the operation of such an NMOS transistor 210. Using this equation,
the threshold voltage V.sub.T of the transistor 210 may be
determined and compared to a previous determination and/or a
look-up table to determine changes in the threshold voltage V.sub.T
and determine whether a pressure or force has been applied to the
cantilever actuator 230. The single semiconductor component 200 of
FIG. 2 may be coupled to circuitry to perform this determination of
threshold voltage V.sub.T and or to perform other operations with
the single semiconductor component 200, such as causing deflection
or vibration of the cantilever actuator 230.
[0038] FIG. 3 is a block diagram illustrating operation of the
single semiconductor component of FIG. 2 according to certain
embodiments of the disclosure. An electronic device 300 may include
the single semiconductor component 200, which may be the integrated
TFT transistor 210 and cantilever actuator 230 illustrated in FIG.
2. The single semiconductor component 200 may have several
electrodes for communicating with other circuitry, including the
drain electrode 212, the gate electrode 214, the source electrode
216, the first cantilever electrode, and the second cantilever
electrode. An alternating current (AC) voltage source 312 may be
coupled between the first and second cantilever electrodes. The AC
voltage source 312 may be disconnected from the electrodes by a
switch 314. The AC voltage source 312 may provide a signal to the
cantilever actuator 230 to create, for example, vibration feedback
to a user. Additionally or alternatively, a direct current (DC)
voltage source 316 may be coupled between the first and second
cantilever electrodes. The DC voltage source 316 may be
disconnected from the electrodes by a switch 318. The DC voltage
source 316 may provide a signal to the cantilever actuator 230 to
create, for example, a static deflection that creates a physical
button on a display device.
[0039] Haptic feedback may be provided by the single semiconductor
component 200 by a controller 310. The controller 310 may be
coupled to the voltage sources 312 and 316 to generate control
signals that cause the sources 312 and 316 to apply signals to the
cantilever actuator 230 that result in a desired effect. The
desired effect may be determined by a processor 330 coupled to the
controller 310. The processor 330 may execute an operating system
342 and/or an application 340 stored in memory 340, and that
operating system 342 and application 340 may include code that
interacts with a user by providing haptic feedback. For example,
the application 340 may instruct the processor 330, through an
application programming interface (API) to the operating system
342, to create a button on a display device (not shown). That
display device may include an array of single semiconductor
components, such as the integrated transistor and cantilever 200.
The processor 330 may then instruct the controller 310 to create
static deflection at particular locations within the array of
components. The controller 310 may then determine that the
component 200 is within the bounds of the desired button and
instruct the DC voltage source 316 to cause deflection of the
cantilever actuator of the component 200. Although a separate
controller 310 and processor 330 are described, functionality
assigned to either the controller 310 or the processor 330 may
alternatively be assigned to other circuitry. For example, the
functionality performed by the controller 310 may be integrated
within the processor 330. The controller 310 may also control the
switches 314 and 318 to coupled or disconnect the sources 312 and
316 depending on the desired haptic feedback to provide to a
user.
[0040] The single semiconductor component 200 may also be used to
sense pressure, force, and/or other quantities through sensor
circuitry 320. The sensor 320 may be coupled to one or more of the
drain electrode 212, the gate electrode 214, and the source
electrode 216. The sensor 320 may perform operations such as, for
example, the measurement of a threshold voltage V.sub.T of the
transistor 210 of the component 200. During the measurement of the
threshold voltage V.sub.T or other measurements, the sensor 320 may
apply various voltages V.sub.G to the gate electrode 214 and
measure currents I.sub.DS through the drain electrode 212 and the
source electrode 216. The sensor 320 may report measurement values
to the processor 330, where the processor 330 may perform further
calculations to determine, for example, an amount of applied force,
applied pressure, or other quantity. Further calculations performed
by the processor 330 may include, for example, determining a user
input to an electronic device, such as where on a touchscreen a
user touched or determining a gesture that was input to the
touchscreen by a user. The processor 330 may report this user input
to the operating system 342 and/or the application 340. The
operating system 342 and/or the application 340 may then take
appropriate action in response to the user input. Although a
separate sensor 320 and processor 330 are described, functionality
assigned to either the sensor 320 or the processor 330 may
alternatively be assigned to other circuitry. For example, the
functionality performed by the sensor 320 may be integrated within
the processor 330.
[0041] One or more single semiconductor components, such as
illustrated in FIG. 2, along with supporting circuitry, such as
illustrated in FIG. 3, may be incorporated into electronic devices
to provide input/output functionality. For example, user input may
be received through the transistor 210 of the single semiconductor
component 200 of FIG. 2, and haptic feedback may be provided
through the cantilever actuator 230. FIGS. 4A-4C are illustrations
of electronic devices integrating one or more single semiconductor
components integrating transistor with cantilever actuator
according to certain embodiments of the disclosure.
[0042] FIG. 4A illustrates a smartphone 400, which includes a
display device 402 incorporating an array of single semiconductor
components 404, such as the integrated sensor and cantilever
actuator illustrated in FIG. 2. When the smartphone 400 is
constructed, the components 404 may be laid over top of a display,
such as a liquid crystal display (LCD). Additional components
and/or protective layers may be deposited over the components 404.
The components 404 may be used to deliver localized haptic feedback
on the display device 402 and/or to receive user input regarding
where on the display device 402 the user touched.
[0043] FIG. 4B illustrates a glove 410 including one or more of
components 412, such as the integrated sensor and cantilever
actuator illustrated in FIG. 2. The components 412 may be arranged
in various locations on the glove 410, such as on fingertips of the
glove 410. The components 412 may be coupled to a processor and
other circuitry integrated into the glove 410. Alternatively, the
glove 410 may communicate either through a wired or wireless
connection to a device, such as a computer or a smartphone, that
processes signals from and generates control signals for the
components 412. The glove 410 may provide haptic feedback to the
user on particular fingers or particular parts of the user's hand.
The glove 410 may also receive user input when a user makes hand
motions or wiggles fingers in the glove 410.
[0044] FIG. 4C illustrates a patch 420 including one or more
components 422, such as the integrated sensor and cantilever
actuator illustrated in FIG. 2. The patch 420 may be manufactured
as a small substrate intended for application to human skin for
healthcare applications. The components 422 may be coupled to a
processor and other circuitry integrated into the patch 420.
Alternatively, the patch 420 may communicate either through a wired
or wireless connection to a device, such as a computer or a
smartphone, that processes signals from and generates control
signals for the components 422.
[0045] User input may be received through a single semiconductor
component 200, such as that illustrated in FIG. 2, by processing
information obtained from the component as shown in the flow chart
of FIG. 5. FIG. 5 is a flow chart illustrating a method of
receiving user input through a single semiconductor component
integrating transistor with cantilever actuator according to one
embodiment of the disclosure. A method 500 begins at block 502 with
detecting a change in threshold voltage V.sub.T of the transistor
integrated with the piezoelectric cantilever. The change in
threshold voltage V.sub.T may be due to induced charges at the gate
electrode of the transistor caused by force, pressure, or another
effect on the piezoelectric cantilever. The step at block 502 may
include measuring the threshold voltage V.sub.T of the transistor.
Then, at block 504, it can be determined from the change in
threshold voltage V.sub.T whether a pressure was applied to the
cantilever actuator.
[0046] After determining that there was a change in threshold
voltage V.sub.T and calculating the applied pressure at blocks 502
and 504, user input may be processed at block 506. The steps at
block 506 may include, for example, determining where on a touch
screen a user applied pressure. The steps at block 506 may also
include tracing applied pressure over a portion of the touch screen
to determine a gesture was made on the touch screen, such as the
circling of a portion of text displayed on the touch screen or
highlighting a portion of text displayed on the touch screen. At
block 508, an operation is performed on an electronic device based
on the processed user input of block 506. For example, the user
input circle processed at block 506 may be provided to an
application and that application apply highlighting or other text
formatting to the circled text.
[0047] Then, at block 510, haptic feedback may be provided to a
user based on the user input of block 506 or the operation
performed at block 508. The haptic feedback may be provided through
the same piezoelectric cantilever integrated with the transistor
that a threshold voltage V.sub.T change was detected in at block
502. In one embodiment, the feedback may be provided to the user
through the same transistors that experienced a change in threshold
voltage V.sub.T at block 502. For example, the display screen may
vibrate in the proximity of the highlighted text for a short half
second or one second vibration to draw the user's attention to the
newly highlighted text. In another example, a dialog box may pop up
to confirm the user's selection of the text with an "OK" or
"Cancel" button. The "OK" and "Cancel" buttons may be raised off
the surface of the display screen by applying a DC voltage to
certain cantilever actuators where the "OK" and "Cancel" buttons
are shown on the display screen. The location of the dialog box may
be in the proximity of where the user highlighted text.
[0048] Referring back to step 502 of FIG. 5, the threshold voltage
V.sub.T of the transistor is a measurable electrical characteristic
of the transistor. FIG. 6 are graphs illustrating electrical
characteristics of a transistor integrated with a cantilever
actuator according to certain embodiments of the disclosure. Graph
600 illustrates a line 602 showing a response of the transistor,
such as the transistor 210 illustrated in FIG. 2, to varying
gate-source voltages V.sub.GS. Generally, as the magnitude of
V.sub.GS increases with a fixed drain-to-source voltage V.sub.DS
current I.sub.DS, illustrated on the logarithmic y-axis, through
the transistor increases. The calculation of a threshold voltage
V.sub.T for the transistor is shown in graph 610. The line 612 of
graph 610 illustrates the current I.sub.DS through the transistor
for varying gate-source voltage V.sub.GS on a linear scale. A line
614 of the form y=mx+b may be drawn from the slope of the linear
region of line 612. The intersection of line 614 with the x-axis
indicates the threshold voltage V.sub.T of the transistor. For the
transistor measured in line 612 of graph 610, the threshold voltage
V.sub.T is approximately 1 Volt. The threshold voltage V.sub.T may
be defined as the value of gate-source voltage V.sub.GS when the
conductive channel (or an accumulation layer near the
dielectric/semiconductor interface) just begins to connect the
source and drain electrodes. Threshold voltage V.sub.T deviates
from the ideal value (approximately 0 V) caused by the
gate-semiconductor work function difference, semiconductor
background carrier concentration, and the density of trapped
charges in the dielectric, the semiconductor and the
dielectric/semiconductor interface.
[0049] A change in the threshold voltage V.sub.T of a transistor
due to induced charges in the gate stack, such as caused by force
applied to a cantilever actuator integrated with the transistor can
be shown on similar graphs to those as shown in FIG. 6. Under the
presence of strain, such as by means of force, pressure,
deflection, or vibration, in the cantilever part, charges are
induced in the piezoelectric film by its own piezoelectric nature,
as described in the following equation:
D.sub.3=d.sub.33T.sub.33+.di-elect cons..sub.33E.sub.33
where D is the electric displacement, T the mechanical stress, E
the electric field, d.sub.33 the piezoelectric constant, and
.di-elect cons..sub.33 the dielectric constant. The voltage as a
function of the applied mechanical stress can then be estimated
as
V = E 3 s = d 33 T 3 s 0 ##EQU00002##
where s is the thickness, .epsilon. the relative permittivity of
the piezoelectric material, and .epsilon..sub.0 the dielectric
permittivity of vacuum.
[0050] These equations illustrate that the electric displacement,
or charge, can be controlled by the electric field and the applied
force F or stress T. The induced charges, which are proportional to
the stress cause the gate dielectric capacitance (C.sub.OX) of the
transistor to change, which modifies the transfer characteristics
of the transistor. The change in the gate capacitance, then
translates to a change in the threshold voltage V.sub.T, which is
detectible by appropriate circuitry, such as that described with
reference to FIG. 3. Furthermore, the change in threshold voltage
V.sub.T may be directly proportional to the strain, as the charges
induced in the piezoelectric film are proportional to the strain.
For this given configuration, a change in threshold voltage
V.sub.T, in either a positive or negative direction, may indicate
the presence of stress, such as a touch from a user, while the
magnitude of the change senses the amount of force exerted on the
cantilever actuator. With an array of sensors over an area, such as
the area of a touchscreen in a smartphone, pressure can also be
sensed, as pressure can be calculated as the force present in a
certain area. The number of actuators per square centimeter built
into an electronic device may be adjusted to obtain a desired
resolution. Further, vibration can be detected by identifying an
amplitude and frequency of the change in threshold voltage
V.sub.T.
[0051] FIG. 7 are graphs illustrating a change in threshold voltage
of a transistor integrated with a cantilever actuator based on
force applied to the cantilever actuator according to one
embodiment of the disclosure. In graph 700, a transfer
characteristic of a transistor having a cantilever actuator under
applied stress is shown in line 704, while a transistor having a
cantilever actuator with no applied stress is shown in line 602. In
graph 710, threshold voltages V.sub.T of the two transistors shown
in graph 700 are calculated. The threshold voltage V.sub.T of the
first transistor from line 612 can be calculated as intercept 722
at approximately 1 Volt. The threshold voltage V.sub.T of the
second transistor from line 714 can be calculated by drawing a line
718 and finding an intercept on the x-axis of approximately 1.75
Volts. Referring back to FIG. 5, this change in threshold voltage
of approximately 0.75 Volts may be determined at step 502 of method
500 and further processed through steps 504, 506, and 508 to
control an electronic device based on user input received through
the single semiconductor component integrating a transistor with a
cantilever actuator.
[0052] This detected change of threshold voltage V.sub.T in the
single semiconductor component may be proportional to a force
applied to the cantilever actuator, as illustrated in FIG. 8. FIG.
8 is a graph illustrating determined force applied to a cantilever
actuator based on a change in threshold voltage of a transistor
integrated with the cantilever actuator according to one embodiment
of the disclosure. A graph 800 shows a line 802 illustrating a
relationship between an applied force to the cantilever actuator
and a measured threshold voltage V.sub.T for a transistor
integrated with the cantilever actuator. The line 802 shows an
approximately linear relationship between the applied force and the
change in threshold voltage V.sub.T. Referring back to FIG. 5, when
the pressure applied to the cantilever may be determined at block
504 in one embodiment through a known algorithm or equation
programmed into a processor, such as the processor 330 of FIG. 3.
In another embodiment, a look-up table may be stored in the memory
340 of FIG. 3 such that the processor 330 can translate a detected
threshold voltage V.sub.T change into an applied force value. In
yet another embodiment, the algorithm, equation, or look-up table
may include calibration adjustments. For example, when a user first
sets up the electronic device the user may be asked to press at
various strengths on the cantilever actuator and the processor 330
may perform measurements as the user provides the calibration
input. Such a calibration process may allow the electronic device
to adapt for the different pressures that would be applied by
different users. The calibration process may also allow the
electronic device to adapt for slight manufacturing variances in
the integrated transistor and cantilever actuators.
[0053] Receiving and processing user input with the single
semiconductor component illustrated in FIG. 2 is described above,
however the single semiconductor component may also be used to
provide feedback to the user. FIG. 9 is a flow chart illustrating a
method of providing haptic feedback to a user through a single
semiconductor component integrating transistor with cantilever
actuator according to one embodiment of the disclosure. A method
900 begins at block 902 with receiving an indication of haptic
feedback to provide to the user through the integrated transistor
and piezoelectric cantilever. For example, referring to FIG. 3, the
processor 330 may receiving instructions from the application 340
to simulate a button on a display device of a smartphone. At block
904, it is determined whether the feedback should be provided
through induced vibration or static deflection of the cantilever
actuator.
[0054] If the feedback is to be provided through static deflection,
the method 900 proceeds to block 906 with applying a direct current
(DC) signal to the piezoelectric cantilever integrated with the
transistor. The DC signal may be applied, for example, through the
two electrodes coupled to the cantilever actuator 210 of FIG. 2. If
the feedback is to be provided through induced vibration, the
method 900 proceeds to block 908 with applying an alternating
current (AC) signal to the piezoelectric cantilever integrated with
the transistor. The AC signal may likewise be applied to the
electrodes of the cantilever actuator 210 of FIG. 2. In one
embodiment, feedback may include both static deflection and induced
vibration. In this embodiment, the AC signal applied to the
piezoelectric cantilever may have a DC bias, such that the DC bias
is not zero and the DC bias has the effect of causing static
deflection along with the induced vibration.
[0055] After feedback is provided at block 906 or block 908, the
method 900 may proceed to block 910. At block 910, user input may
be received through the transistor integrated with the
piezoelectric cantilever. For example, when a physical button is
presented on a display device of a smartphone by the cantilever
actuator, user input of pressing on the button may be detected
through the transistor coupled to the cantilever actuator. In this
example, this user input may be received simultaneously with the
providing of the haptic feed to the user. Thus, the user input may
be received in direct response to the feedback.
[0056] Although a particular transistor structure is illustrated in
FIG. 2 and described above, the transistor of the single
semiconductor component 200 of FIG. 2 is not restricted to a
certain transistor configuration. Other transistor configurations
may also be integrated with a cantilever actuator. For example,
FIGS. 10A-D are illustrations of various configurations for a
transistor of a single semiconductor component integrating
transistor with cantilever actuator according to certain
embodiments of the disclosure. FIG. 10A illustrates a bottom-gate
staggered TFT structure that may be incorporated into the single
semiconductor component 200 of FIG. 2 according to one embodiment
of the disclosure. FIG. 10B illustrates a bottom-gate coplanar TFT
structure that may be incorporated into the single semiconductor
component 200 of FIG. 2 according to one embodiment of the
disclosure. FIG. 10C illustrates a top-gate staggered TFT structure
that may be incorporated into the single semiconductor component
200 of FIG. 2 according to one embodiment of the disclosure. FIG.
10D illustrates a top-gate coplanar TFT structure that may be
incorporated into the single semiconductor component 200 of FIG. 2
according to one embodiment of the disclosure.
[0057] Additionally, although a single transistor is shown
integrated in the single semiconductor component 200 of FIG. 2 with
a cantilever actuator, multiple transistors may be integrated with
a piezoelectric material or cantilever actuator, such as in a
complimentary metal-oxide-semiconductor (CMOS) configuration. FIG.
11 is an illustration showing a complimentary
metal-oxide-semiconductor (CMOS)-like configuration of a single
semiconductor component integrating transistor with cantilever
actuator according to one embodiment of the disclosure. A single
semiconductor component 1100 may include a piezoelectric layer 1116
integrated with a transistor. The transistor may include an n-type
semiconductor channel 1112 and a p-type semiconductor channel 1114.
Communication with the component 1100 may be through a first source
electrode 1102, a second source electrode, 1104, a common gate
electrode 1106, and a common drain electrode 1108. A cantilever
actuator (not shown) may extend from the common gate electrode 1106
similar to the cantilever actuator 230 of FIG. 2.
[0058] When two semiconductors, the n-type 1112 and p-type 1114,
are used in the CMOS-like configuration of component 1100,
piezoelectric effects such as touch, force, pressure, and/or
vibration, along with pyroelectric such as temperature can be
detected. If the induced charges due to the piezoelectric effect
cause a change in the threshold voltage V.sub.T in the p-type
semiconductor 1114, the pyroelectric effect can be detected in the
n-type semiconductor 1112. Detection can also occur such that
pyroelectric effects are detected through the p-type semiconductor
1114 and the piezoelectric effects are detected through the n-type
semiconductor 1112.
[0059] The single semiconductor component illustrated in FIG. 2 and
the other configurations of the single semiconductor component
described above may be manufacturing through novel combinations of
conventional thin film processing techniques. In one embodiment, a
top gate structure may be fabricated on a rigid glass substrate. A
transparent p-type tin monoxide (SnO) semiconductor active layer
may be deposited by DC reactive magnetron sputtering. Source and
drain electrodes may then be electron-beam evaporated from Titanium
and Gold sources. Next, the deposited stack may be annealed after
source and drain deposition to crystallize the SnO active layer.
Then, a P(VDF-TrFE-CFE) copolymer piezoelectric material powder may
be dissolved in Dimethyl Formamide (DMF) to obtain a solution that
is filtered and spun on the SnO film followed by a soft bake of the
polymer. The films may then be annealed to improve crystallinity.
Next, aluminum top gate electrodes may be thermally evaporated to
complete the stack. Layers of the device may be patterned by
conventional photolithography technique and lift-off process.
[0060] Although one particular method of manufacturing is
described, many other manufacturing processes can be used to obtain
the same or similar configurations of a single semiconductor
component with integrated transistor and cantilever actuator. For
example, the described process used opaque electrodes, including
titanium, gold, and aluminum, but transparent electrodes such as
indium tin oxide (ITO), aluminum doped zinc oxide (AZO), graphene,
silver nanowires, or any other inorganic or organic available
transparent electrodes may be substituted in the process.
[0061] If implemented in firmware and/or software, the functions
described above, such as with respect to the flow chart of FIG. 5
and FIG. 9 may be stored as one or more instructions or code on a
computer-readable medium. Examples include non-transitory
computer-readable media encoded with a data structure and
computer-readable media encoded with a computer program.
Computer-readable media includes physical computer storage media. A
storage medium may be any available medium that can be accessed by
a computer. By way of example, and not limitation, such
computer-readable media can comprise random access memory (RAM),
read-only memory (ROM), electrically erasable programmable
read-only memory (EEPROM), compact-disc read-only memory (CD-ROM)
or other optical disk storage, magnetic disk storage or other
magnetic storage devices, or any other medium that can be used to
store desired program code in the form of instructions or data
structures and that can be accessed by a computer. Disk and disc
includes compact discs (CD), laser discs, optical discs, digital
versatile discs (DVD), floppy disks, and Blu-ray discs. Generally,
disks reproduce data magnetically, and discs reproduce data
optically. Combinations of the above should also be included within
the scope of computer-readable media.
[0062] In addition to storage on computer readable medium,
instructions and/or data may be provided as signals on transmission
media included in a communication apparatus. For example, a
communication apparatus may include a transceiver having signals
indicative of instructions and data. The instructions and data are
configured to cause one or more processors to implement the
functions outlined in the claims.
[0063] Although the present disclosure and certain representative
advantages have been described in detail, it should be understood
that various changes, substitutions and alterations can be made
herein without departing from the spirit and scope of the
disclosure as defined by the appended claims. Moreover, the scope
of the present application is not intended to be limited to the
particular embodiments of the process, machine, manufacture,
composition of matter, means, methods and steps described in the
specification. As one of ordinary skill in the art will readily
appreciate from the present disclosure, processes, machines,
manufacture, compositions of matter, means, methods, or steps,
presently existing or later to be developed that perform
substantially the same function or achieve substantially the same
result as the corresponding embodiments described herein may be
utilized. Accordingly, the appended claims are intended to include
within their scope such processes, machines, manufacture,
compositions of matter, means, methods, or steps.
* * * * *