U.S. patent application number 15/441497 was filed with the patent office on 2018-03-15 for semiconductor device.
This patent application is currently assigned to KABUSHIKI KAISHA TOSHIBA. The applicant listed for this patent is KABUSHIKI KAISHA TOSHIBA. Invention is credited to Junji KATAOKA, Takuo KIKUCHI, Kohei OASA, Yasunobu SAITO, Kazuo SAKI, Tatsuya SHIRAISHI, Akira YOSHIOKA.
Application Number | 20180076311 15/441497 |
Document ID | / |
Family ID | 61525639 |
Filed Date | 2018-03-15 |
United States Patent
Application |
20180076311 |
Kind Code |
A1 |
SAITO; Yasunobu ; et
al. |
March 15, 2018 |
SEMICONDUCTOR DEVICE
Abstract
A semiconductor device includes: a first nitride semiconductor
layer, a second nitride semiconductor layer that is provided on the
first nitride semiconductor layer and has a band gap larger than a
band gap of the first nitride semiconductor layer, a gate electrode
that is provided on the first nitride semiconductor layer, a first
electrode that is electrically connected to the first nitride
semiconductor layer, a second electrode disposed such that the gate
electrode is positioned between the first electrode and the second
electrode, and electrically connected to the first nitride
semiconductor layer, and a first insulation layer that is provided
between the gate electrode and the second electrode, disposed such
that the second nitride semiconductor layer is positioned between
the first nitride semiconductor layer and the first insulation
layer, and including silicon oxide having an oxygen-to-silicon
atomic ratio (O/Si) of 1.50 or more and 1.85 or less.
Inventors: |
SAITO; Yasunobu; (Nomi,
JP) ; OASA; Kohei; (Nonoichi, JP) ; KIKUCHI;
Takuo; (Kamakura, JP) ; KATAOKA; Junji;
(Yokohama, JP) ; SHIRAISHI; Tatsuya; (Nonoichi,
JP) ; YOSHIOKA; Akira; (Kanazawa, JP) ; SAKI;
Kazuo; (Kuwana, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
KABUSHIKI KAISHA TOSHIBA |
Tokyo |
|
JP |
|
|
Assignee: |
KABUSHIKI KAISHA TOSHIBA
Tokyo
JP
|
Family ID: |
61525639 |
Appl. No.: |
15/441497 |
Filed: |
February 24, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 29/402 20130101;
H01L 29/513 20130101; H01L 29/41725 20130101; H01L 29/404 20130101;
H01L 29/7786 20130101; H01L 29/408 20130101; H01L 29/518 20130101;
H01L 29/2003 20130101 |
International
Class: |
H01L 29/778 20060101
H01L029/778; H01L 29/40 20060101 H01L029/40; H01L 29/51 20060101
H01L029/51 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 9, 2016 |
JP |
2016-177019 |
Claims
1. A semiconductor device comprising: a first nitride semiconductor
layer; a second nitride semiconductor layer that is provided on the
first nitride semiconductor layer and has a band gap larger than a
band gap of the first nitride semiconductor layer; a gate electrode
that is provided on the first nitride semiconductor layer; a first
electrode that is electrically connected to the first nitride
semiconductor layer; a second electrode disposed such that the gate
electrode is positioned between the first electrode and the second
electrode, and electrically connected to the first nitride
semiconductor layer; and a first insulation layer that is provided
between the gate electrode and the second electrode, disposed such
that the second nitride semiconductor layer is positioned between
the first nitride semiconductor layer and the first insulation
layer, and including silicon oxide having an oxygen-to-silicon
atomic ratio (O/Si) of 1.50 or more and 1.85 or less.
2. The semiconductor device according to claim 1, further
comprising a second insulation layer that is provided between the
first insulation layer and the second electrode, disposed such that
the second nitride semiconductor layer is positioned between the
first nitride semiconductor layer and the second insulation layer,
and including silicon oxide having an oxygen-to-silicon atomic
ratio higher than the oxygen-to-silicon atomic ratio of the first
insulation layer.
3. The semiconductor device according to claim 1, further
comprising a third electrode disposed such that the gate electrode
and the first insulation layer are positioned between the second
nitride semiconductor layer and the third electrode, and
electrically connected to the first electrode.
4. The semiconductor device according to claim 3, further
comprising a fourth electrode that is provided between the second
nitride semiconductor layer and the third electrode, has an end
portion provided on a second electrode side positioned between the
gate electrode and an end portion of the third electrode provided
on the second electrode side, and is electrically connected to the
gate electrode.
5. The semiconductor device according to claim 4, further
comprising a third insulation layer that is provided between the
second nitride semiconductor layer and the fourth electrode and
includes silicon oxide having an oxygen-to-silicon atomic ratio
(O/Si) of 1.50 or more and 1.85 or less.
6. The semiconductor device according to claim 1, further
comprising a gate insulation layer that is provided between the
second nitride semiconductor layer and the gate electrode and
includes silicon oxide containing nitrogen.
7. A semiconductor device comprising: a first nitride semiconductor
layer; a second nitride semiconductor layer that is provided on the
first nitride semiconductor layer and has a band gap larger than a
band gap of the first nitride semiconductor layer; a gate electrode
that is provided on the first nitride semiconductor layer; a first
electrode that is electrically connected to the first nitride
semiconductor layer; a second electrode disposed such that the gate
electrode is positioned between the first electrode and the second
electrode, and electrically connected to the first nitride
semiconductor layer; a first insulation layer that is provided
between the gate electrode and the second electrode, disposed such
that the second nitride semiconductor layer is positioned between
the first nitride semiconductor layer and the first insulation
layer, and including silicon oxide containing nitrogen; and a
second insulation layer that is provided between the first
insulation layer and the second electrode and includes silicon
oxide having a density of nitrogen lower than the silicon oxide
included in the first insulation layer.
8. The semiconductor device according to claim 7, further
comprising a third electrode disposed such that the gate electrode
and the first insulation layer are positioned between the second
nitride semiconductor layer and the third electrode, and
electrically connected to the first electrode.
9. The semiconductor device according to claim 8, further
comprising a gate insulation layer that is provided between the
second nitride semiconductor layer and the gate electrode and
includes silicon oxide containing nitrogen.
10. A semiconductor device comprising: a first nitride
semiconductor layer; a second nitride semiconductor layer that is
provided on the first nitride semiconductor layer and has a band
gap larger than a band gap of the first nitride semiconductor
layer; a gate electrode that is provided on the first nitride
semiconductor layer; a first electrode that is electrically
connected to the first nitride semiconductor layer; a second
electrode disposed such that the gate electrode is positioned
between the first electrode and the second electrode, and
electrically connected to the first nitride semiconductor layer; a
first insulation layer that is provided between the gate electrode
and the second electrode, disposed such that the second nitride
semiconductor layer is positioned between the first nitride
semiconductor layer and the first insulation layer, and containing
positive charge; and a second insulation layer that is provided
between the first insulation layer and the second electrode,
disposed such that the second nitride semiconductor layer is
positioned between the first nitride semiconductor layer and the
second insulation layer, and having a density of positive charge
lower than that of the first insulation layer.
11. The semiconductor device according to claim 10, further
comprising a third electrode disposed such that the gate electrode
and the first insulation layer are positioned between the second
nitride semiconductor layer and the third electrode, and
electrically connected to the first electrode.
12. The semiconductor device according to claim 11, further
comprising a gate insulation layer that is provided between the
second nitride semiconductor layer and the gate electrode and
contains positive charge.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit of and priority to
Japanese Patent Application No. 2016-177019, filed Sep. 9, 2016;
the entire contents of which are incorporated herein by
reference.
FIELD
[0002] Embodiments described herein relate generally to a
semiconductor device.
BACKGROUND
[0003] In high electron mobility transistors (HEMTs) using a group
III-V compound semiconductor, a two-dimensional electron gas (2DEG)
is formed in a channel layer. The two-dimensional electron gas
helps to allow for low on-state resistance and a high switching
speed.
[0004] In the off-state of such a HEMT, a high voltage can be
applied between a source electrode and a drain electrode, and
leaked electrons are caused to flow into the drain electrode. At
that time, some of the electrons can be trapped in an interface
between a semiconductor layer and an insulation layer, or inside
the insulation layer, and become a negative fixed charge. Because
of the negative fixed charge, channel depletion occurs in an on
state of the HEMT, and this may cause an increase in on-state
resistance. Such a phenomenon is called current collapse.
[0005] Thus it may be desirable to prevent trapping of electrons
and suppress current collapse.
SUMMARY
[0006] In some embodiments, according to one aspect, a
semiconductor device includes: a first nitride semiconductor layer,
a second nitride semiconductor layer that is provided on the first
nitride semiconductor layer and has a band gap larger than a band
gap of the first nitride semiconductor layer, a gate electrode that
is provided on the first nitride semiconductor layer, a first
electrode that is electrically connected to the first nitride
semiconductor layer, a second electrode disposed such that the gate
electrode is positioned between the first electrode and the second
electrode, and electrically connected to the first nitride
semiconductor layer, and a first insulation layer that is provided
between the gate electrode and the second electrode, disposed such
that the second nitride semiconductor layer is positioned between
the first nitride semiconductor layer and the first insulation
layer, and including silicon oxide having an oxygen-to-silicon
atomic ratio (O/Si) of 1.50 or more and 1.85 or less.
[0007] In some embodiments, according to another aspect, a
semiconductor device includes a first nitride semiconductor layer,
a second nitride semiconductor layer that is provided on the first
nitride semiconductor layer and has a band gap larger than a band
gap of the first nitride semiconductor layer, a gate electrode that
is provided on the first nitride semiconductor layer, a first
electrode that is electrically connected to the first nitride
semiconductor layer, a second electrode disposed such that the gate
electrode is positioned between the first electrode and the second
electrode, and electrically connected to the first nitride
semiconductor layer, a first insulation layer that is provided
between the gate electrode and the second electrode, disposed such
that the second nitride semiconductor layer is positioned between
the first nitride semiconductor layer and the first insulation
layer, and including silicon oxide containing nitrogen, and a
second insulation layer that is provided between the first
insulation layer and the second electrode and includes silicon
oxide having a density of nitrogen lower than the silicon oxide
included in the first insulation layer.
[0008] In some embodiments, according to another aspect, a
semiconductor device includes a first nitride semiconductor layer,
a second nitride semiconductor layer that is provided on the first
nitride semiconductor layer and has a band gap larger than a band
gap of the first nitride semiconductor layer, a gate electrode that
is provided on the first nitride semiconductor layer, a first
electrode that is electrically connected to the first nitride
semiconductor layer, a second electrode disposed such that the gate
electrode is positioned between the first electrode and the second
electrode, and electrically connected to the first nitride
semiconductor layer, a first insulation layer that is provided
between the gate electrode and the second electrode, disposed such
that the second nitride semiconductor layer is positioned between
the first nitride semiconductor layer and the first insulation
layer, and containing positive charge, and a second insulation
layer that is provided between the first insulation layer and the
second electrode, disposed such that the second nitride
semiconductor layer is positioned between the first nitride
semiconductor layer and the second insulation layer, and having a
density of positive charge lower than that of the first insulation
layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] FIG. 1 is a schematic cross-sectional view of embodiments of
a semiconductor device according to a first aspect.
[0010] FIG. 2A and FIG. 2B are schematic diagrams that illustrate
some operations and effects of embodiments of a semiconductor
device according to the first aspect.
[0011] FIG. 3A and FIG. 3B are schematic diagrams that illustrate
some operations and effects of embodiments of a semiconductor
device according to the first aspect.
[0012] FIG. 4 is a schematic cross-sectional view of embodiments of
a semiconductor device according to a second aspect.
[0013] FIG. 5 is a schematic cross-sectional view of embodiments of
a semiconductor device according to a third aspect.
[0014] FIG. 6 is a schematic cross-sectional view of embodiments of
a semiconductor device according to a fourth aspect.
[0015] FIG. 7 is a schematic cross-sectional view of embodiments of
a semiconductor device according to a fifth aspect.
[0016] FIG. 8 is a schematic cross-sectional view of embodiments of
a semiconductor device according to a sixth aspect.
[0017] FIG. 9 is a schematic cross-sectional view of embodiments of
a semiconductor device according to a seventh aspect.
[0018] FIG. 10 is a schematic cross-sectional view of embodiments
of a semiconductor device according to an eighth aspect.
DETAILED DESCRIPTION
[0019] Some embodiments provide a semiconductor device capable of
suppressing current collapse.
[0020] In general, according to some embodiments, a semiconductor
device includes: a first nitride semiconductor layer; a second
nitride semiconductor layer that is provided on the first nitride
semiconductor layer and has a band gap larger than the first
nitride semiconductor layer; a gate electrode that is provided on
the first nitride semiconductor layer; a first electrode that is
electrically connected to the first nitride semiconductor layer; a
second electrode that allows the gate electrode to be positioned
between the first electrode and the second electrode and is
electrically connected to the first nitride semiconductor layer;
and a first insulation layer that is provided between the gate
electrode and the second electrode, allows the second nitride
semiconductor layer to be positioned between the first nitride
semiconductor layer and the first insulation layer, and includes
silicon oxide having an oxygen-to-silicon atomic ratio (O/Si) of
about 1.50 or more and about 1.85 or less.
[0021] In this disclosure, corresponding (e.g. similar) elements
and the like are given a same reference signs, and duplicate
description thereof may not be presented.
[0022] As used in this disclosure, the term "undoped" means that an
impurity concentration is about 1.times.10.sup.15 cm.sup.-3 or
less.
[0023] In this disclosure, in order to represent positional
relations of components and the like, an up direction as depicted
in the drawings will be described as an "upper side", and a down
direction as depicted in the drawings will be described as a "lower
side". In this disclosure, the terms "upper side" and "lower side"
are not necessarily terms representing relations with the direction
of a gravitational force.
[0024] In the description of some embodiments, an element provided
"on" another element can encompass cases where the former element
is directly on (e.g., in physical contact with) the latter element,
as well as cases where one or more intervening elements are located
between the former element and the latter element.
(First Aspect)
[0025] In some embodiments according to the first aspect, a
semiconductor device includes: a first nitride semiconductor layer;
a second nitride semiconductor layer that is arranged (positioned)
on the first nitride semiconductor layer and has a band gap larger
than the first nitride semiconductor layer; a gate electrode that
is arranged on the first nitride semiconductor layer; a first
electrode that is electrically connected to the first nitride
semiconductor layer; a second electrode that allows the gate
electrode to be positioned between the first electrode and the
second electrode and is electrically connected to the first nitride
semiconductor layer; and a first insulation layer that is arranged
between the gate electrode and the second electrode, allows the
second nitride semiconductor layer to be positioned between the
first nitride semiconductor layer and the first insulation layer,
and includes silicon oxide having an oxygen-to-silicon atomic ratio
(O/Si) of about 1.50 or more and about 1.85 or less.
[0026] FIG. 1 is a schematic cross-sectional view of some
embodiments of a HEMT semiconductor device 100 (HEMT 100) according
to the first aspect. The semiconductor device 100 is a HEMT using a
group III-V compound semiconductor.
[0027] As illustrated in FIG. 1, the HEMT 100 includes: a substrate
10; a buffer layer 12; a channel layer 14 (first nitride
semiconductor layer); a barrier layer 16 (second nitride
semiconductor layer); a gate insulation layer 20; a gate electrode
22; a first insulation layer 24; a source electrode 26 (first
electrode); a drain electrode 28 (second electrode); and a source
field plate electrode 30 (third electrode).
[0028] The substrate 10 is, for example, formed using silicon
having a plane orientation of (111). Materials other than silicon
may be used, such as, for example, sapphire or silicon carbide.
[0029] The buffer layer 12 is arranged on the substrate 10. The
buffer layer 12 may allow for alleviating a lattice mismatch
between the substrate 10 and the channel layer 14. The buffer layer
12 is, for example, formed using aluminum nitride or aluminum
gallium nitride.
[0030] The channel layer 14 is arranged on the buffer layer 12. The
channel layer 14 may be referred to herein as an electron transport
layer.
[0031] The channel layer 14 includes, for example, undoped
Al.sub.XGa.sub.1-XN (where 0.ltoreq.X<1). More specifically, for
example, the channel layer 14 is undoped gallium nitride (GaN). The
thickness of the channel layer 14 is, for example, about 0.1 .mu.m
or more and about 10 .mu.m or less.
[0032] The barrier layer 16 is arranged on the channel layer 14.
The barrier layer 16 may be referred to herein as an electron
supply layer. A band gap of the barrier layer 16 is larger than a
band gap of the channel layer 14.
[0033] The barrier layer 16 having a larger band gap than does the
channel layer 14 has a lattice constant different from that of the
channel layer 14 and thus, is distorted and polarized. In
accordance with an internal electric field corresponding to the
polarization, the band of the channel layer 14 is pressed down, and
a 2DEG is formed as an inversion layer.
[0034] The barrier layer 16 is, for example, undoped
Al.sub.YGa.sub.1-YN (where 0<Y.ltoreq.1, and X<Y). The
barrier layer 16 is, for example, undoped aluminum gallium nitride.
More specifically, for example, the barrier layer 16 is undoped
Al.sub.0.2Ga.sub.0.8N. The thickness of the barrier layer 16 is,
for example, about 20 nm or more and about 50 nm or less.
[0035] Between the channel layer 14 and the barrier layer 16, a
hetero-joining interface is formed. In the channel layer 14, the
2DEG is formed corresponding to polarized charge arranged in the
hetero-joining interface. The 2DEG has high electron mobility and
enables low on-state resistance during operation of the device and
high-speed switching.
[0036] The gate insulation layer 20 is arranged on the barrier
layer 16. The gate insulation layer 20 is arranged to be in contact
with the barrier layer 16. The gate insulation layer 20 is arranged
between the barrier layer 16 and the gate electrode 22. The gate
insulation layer 20 suppresses a gate leak current of the HEMT
100.
[0037] The gate insulation layer 20 is, for example, formed using
silicon nitride. A thickness of the gate insulation layer 20 is,
for example, about 4 nm or more and about 20 nm or less.
[0038] The gate electrode 22 is arranged on the gate insulation
layer 20. The gate electrode 22 is arranged between the source
electrode 26 and the drain electrode 28.
[0039] The gate electrode 22 is, for example, a metal electrode.
The gate electrode 22 has, for example, a layered structure of
platinum (Pt)/gold (Au). Thicknesses of the platinum (Pt)/gold (Au)
are, for example, about 50 nm/about 500 nm.
[0040] The source electrode 26 and the drain electrode 28 are
arranged on the barrier layer 16. The source electrode 26 and the
drain electrode 28 are, for example, metal electrodes. Each of the
source electrode 26 and the drain electrode 28 has, for example, a
stacked structure of titanium (Ti)/aluminum (Al)/nickel (Ni)/gold
(Au). Thicknesses of the titanium (Ti)/aluminum (Al)/nickel
(Ni)/gold (Au) are, for example, about 25 nm/about 300 nm/about 50
nm/about 50 nm.
[0041] The source electrode 26 and the drain electrode 28 are, for
example, in contact with the barrier layer 16. Between the source
electrode 26 and the drain electrode 28 and the barrier layer 16,
an ohmic contact is may be formed. The source electrode 26 and the
drain electrode 28 are electrically connected to the channel layer
14 via the barrier layer 16. A structure in which the source
electrode 26 and the drain electrode 28 are in contact with the
channel layer 14 may additionally or alternatively be employed.
[0042] A distance between the source electrode 26 and the drain
electrode 28 is, for example, about 5 .mu.m or more and about 30
.mu.m or less.
[0043] The first insulation layer 24 is arranged on the gate
electrode 22. At least a portion of the first insulation layer 24
is arranged between the gate electrode 22 and the drain electrode
28. At least a portion of the first insulation layer 24 is arranged
on the gate insulation layer 20.
[0044] The first insulation layer 24 is a silicon oxide layer. The
first insulation layer 24 includes silicon oxide. The principal
component of the first insulation layer 24 is silicon oxide (e.g.,
a majority, by weight, of the first insulation layer 24 is silicon
oxide). The first insulation layer 24 may additionally include
other materials.
[0045] In silicon oxide included in the first insulation layer 24,
an oxygen-to-silicon atomic ratio (O/Si) is about 1.50 or more and
about 1.85 or less. In silicon oxide included in the first
insulation layer 24, the oxygen-to-silicon atomic ratio is lower
than 2. In silicon oxide included in the first insulation layer 24,
oxygen is deficient compared to a stoichiometric composition of
SiO.sub.2.
[0046] Since oxygen is deficient, the silicon oxide layer that is
included in the first insulation layer 24 contains positive charge
inside of the layer. The silicon oxide layer that is the first
insulation layer 24 contains positive fixed charge inside of the
layer. The silicon oxide layer that is the first insulation layer
24 is positively charged.
[0047] The silicon oxide layer that is the first insulation layer
24 is, for example, formed using a plasma chemical vapor deposition
(CVD) method. For example, for a CVD method involving a source gas
of silicon and a source gas of oxygen, by setting a lower or
reduced flow rate of the source gas of oxygen as compared to a flow
rate used for forming SiO.sub.2 having an oxygen-to-silicon atomic
ratio of 2, a silicon oxide layer in which oxygen is deficient can
be formed.
[0048] The oxygen-to-silicon atomic ratio of the silicon oxide
included in the first insulation layer 24 can, for example, be
acquired through calculation based on a measurement according to
secondary ion mass spectrometry (SIMS). Additionally or
alternatively, the atomic ratio can be acquired through a
measurement according to micro auger electron spectroscopy
(rAES).
[0049] The source field plate electrode 30 is arranged on the first
insulation layer 24. Between the source field plate electrode 30
and the barrier layer 16, the gate electrode 22 and the first
insulation layer 24 are positioned.
[0050] The source field plate electrode 30 is electrically
connected to the source electrode 26. The source field plate
electrode 30 is physically connected to the source electrode 26.
The source field plate electrode 30 has a same electric potential
as the source electrode 26.
[0051] The source field plate electrode 30 can help to alleviate
the intensity of an electric field between the source electrode 26
and the drain electrode 28. Accordingly, current collapse of the
HEMT 100 is suppressed. In addition, the source field plate
electrode 30 improves the off-breakdown voltage (off-state
breakdown voltage) of the HEMT 100.
[0052] The source field plate electrode 30 is, for example, a metal
electrode. The source field plate electrode 30 has, for example, a
stacked structure of titanium (Ti)/aluminum (Al)/nickel (Ni)/gold
(Au).
[0053] Next, operations and effects of the semiconductor device
according to some embodiments will be described.
[0054] FIGS. 2A to 3B are schematic diagrams that illustrate some
operations and effects of embodiments of a semiconductor device
according to the first aspect. FIGS. 2A and 2B are band diagrams
that illustrate a HEMT according to a comparative example, and
FIGS. 3A and 3B are band diagrams that illustrate the HEMT 100
according to the first aspect.
[0055] The HEMT of the comparative example includes an insulation
layer of silicon oxide having an oxygen-to-silicon atomic ratio of
2, which corresponds to a stoichiometric composition of SiO.sub.2,
on a gate insulation layer. In other words, an insulation layer
that is not charged is included on a gate insulation layer.
[0056] FIG. 2A is the band diagram that illustrates the HEMT of the
comparative example before the application of a stress. At an
interface (marked with "x" in FIGS. 2A and 2B) between a AlGaN
barrier layer (labeled "AlGaN" in FIGS. 2A and 2B) and a gate
insulation layer (labeled "insulation layer" in FIGS. 2A and 2B),
electrons are not yet trapped.
[0057] FIG. 2B is the band diagram that illustrates the HEMT of the
comparative example after the application of a stress. FIG. 2B is a
band diagram after the application of a high voltage between the
source electrode and the drain electrode of the HEMT that is in the
off state.
[0058] Due to the high voltage applied between the source electrode
and the drain electrode, leaked electrons flow into the drain
electrode. At an interface between the barrier layer and the gate
insulation layer, some leaked electrons are trapped.
[0059] The electrons trapped at the interface form negative fixed
charge. Due to this negative fixed charge, depletion of the channel
occurs in the on-state of the HEMT, and a density of the 2DEG is
decreased. Accordingly, the on-state resistance is increased. In
other words, current collapse occurs.
[0060] FIG. 3A is a band diagram that illustrates the HEMT 100
according to the first aspect before the application of a stress.
The HEMT 100 includes positive fixed charge inside an insulation
layer on a gate insulation layer. Due to the positive fixed charge,
the band can be compressed. Accordingly, electrons can be trapped
at an interface (marked with "x" in FIGS. 3A and 3B) between a
AlGaN barrier layer (labeled "AlGaN" in FIGS. 3A and 3B) and the
gate insulation layer (labeled "insulation layer" in FIGS. 3A and
3B) in advance of application of a stress. The electrons trapped at
the interface level form negative fixed charge.
[0061] The negative fixed charge arranged at the interface between
the gate insulation layer and the insulation layer balances with
the positive fixed charge arranged inside the insulation layer.
Accordingly, the presence of the negative fixed charge does not
cause depletion of the channel in the on-state of the HEMT 100, and
there is no corresponding decrease in the density of the 2DEG.
[0062] FIG. 3B is the band diagram that illustrates the HEMT 100
according to the first aspect after the application of a stress. In
the HEMT 100 according to some embodiments, an interface between
the barrier layer and the gate insulation layer is filled with
electrons in advance of application of stress. Accordingly, when a
stress is also applied, electrons are not further trapped at the
interface level. Therefore, current collapse can be suppressed.
[0063] From the viewpoint of the suppression of the current
collapse, the surface density of the positive charge (positive
fixed charge) arranged inside the insulation layer is preferably
about 1.4.times.10.sup.12 cm.sup.-2 or more.
[0064] In silicon oxide included in the first insulation layer 24
according to some embodiments, the oxygen-to-silicon atomic ratio
(O/Si) is about 1.50 or more and about 1.85 or less. In a case
where the atomic ratio is beyond the above-described range, the
amount of the positive fixed charge may be too small to function in
a desired manner. Then, there is a concern that the suppression of
the current collapse is insufficient. On the other hand, in a case
where the atomic ratio is below the above-described range, the film
quality of the first insulation layer 24 may be degraded. Then,
there is a concern that the structural and/or functional
reliability of the HEMT 100 is lowered.
[0065] The gate insulation layer 20 is preferably formed using
silicon nitride. By forming the gate insulation layer 20 using
silicon nitride, the oxidation of the barrier layer 16 at the time
of manufacturing the HEMT 100 can be suppressed. In addition, when
the gate insulation layer 20 is formed using silicon nitride,
nitrogen can be prevented from escaping from the barrier layer 16
during manufacturing of the HEMT 100. Accordingly, a tendency of
trapping nitrogen near the interface between the barrier layer 16
and the gate insulation layer 20 can be decreased.
[0066] As outlined above, according to the first aspect, a HEMT
capable of suppressing current collapse is provided.
(Second Aspect)
[0067] In some embodiments, a semiconductor device according to a
second aspect is similar to embodiments according to the first
aspect, except that a second insulation layer is further included
and is arranged between the first insulation layer and the second
electrode. Furthermore, the second nitride semiconductor layer is
positioned between the first nitride semiconductor layer and the
second insulation layer, and the second insulation layer includes
silicon oxide having an oxygen-to-silicon atomic ratio higher than
that of the first insulation layer. Hereinafter, description of
some components that are the same or similar to those described
above with respect to the first aspect will be omitted.
[0068] FIG. 4 is a schematic cross-sectional view of some
embodiments of a semiconductor device according to the second
aspect. The semiconductor device according to the second aspect is
a HEMT using a group III-V compound semiconductor.
[0069] As illustrated in FIG. 4, the HEMT 200 semiconductor device
includes: a substrate 10; a buffer layer 12; a channel layer 14
(first nitride semiconductor layer); a barrier layer 16 (second
nitride semiconductor layer); a gate insulation layer 20; a gate
electrode 22; a first insulation layer 24; a source electrode 26
(first electrode); a drain electrode 28 (second electrode); a
source field plate electrode 30 (third electrode), and a second
insulation layer 32.
[0070] The first insulation layer 24 is horizontally (as shown in
FIG. 4) arranged between an end portion of the gate electrode 22
that is on a drain electrode 28 side and an end portion of the
source field plate electrode 30 that is on a drain electrode 28
side, and is arranged between the source field plate electrode 30
and the barrier layer 16. In some embodiments, the first insulation
layer 24 is selectively arranged in an area between the gate
electrode 22 and the drain electrode 28.
[0071] At least a portion of the second insulation layer 32 is
arranged between the first insulation layer 24 and the drain
electrode 28. In addition, at least a portion of the second
insulation layer 32 is arranged between the first insulation layer
24 and the source electrode 26. At least a portion of the first
insulation layer 24 is arranged on the gate insulation layer
20.
[0072] The second insulation layer 32 is a silicon oxide layer. The
second insulation layer 32 includes silicon oxide. The principal
component of the second insulation layer 32 is silicon oxide (e.g.,
a majority, by weight, of the second insulation layer 32 is silicon
oxide). The second insulation layer 32 may additionally include
other materials.
[0073] The silicon oxide included in the second insulation layer 32
has an oxygen-to-silicon atomic ratio (O/Si) higher than that of
the first insulation layer 24. The oxygen-to-silicon atomic ratio
of the silicon oxide included in the second insulation layer 32 is,
for example, about 1.9 or more. The deficiency of oxygen of the
second insulation layer 32 is lower than that of the first
insulation layer 24.
[0074] The density of the positive charge of the second insulation
layer 32 is lower than that of the first insulation layer 24.
[0075] In the off-state of the HEMT 200, positions at which a high
electric field is concentrated, and at which trapping of electrons
may readily occur, are near an end portion of the gate electrode 22
that is on the drain electrode 28 side of the gate electrode 22,
and are near an end portion of the source field plate electrode 30
that is on the drain electrode 28 side of the source field plate
electrode 30. In some embodiments according to the second aspect,
the first insulation layer 24 containing positive fixed charge is
selectively arranged under the source field plate electrode 30 and
between the gate electrode 22 and the drain electrode 28. In other
words, the first insulation layer 24 is selectively near or
adjacent to an end of the gate electrode 22 on the drain electrode
28 side. As a result, current collapse can be effectively
suppressed.
[0076] When the amount of the deficiency of oxygen included in the
silicon oxide increases, there is a concern that the film quality
of the silicon oxide is degraded. In a case where the film quality
of the silicon oxide is degraded, there is a concern that the
structural and/or functional reliability of the device is degraded
due to penetration of water from the outside or the like.
[0077] In embodiments of the HEMT 200 according to the second
aspect, the first insulation layer 24 having more deficiency of
oxygen than the second insulation layer 32 is selectively arranged
under the source field plate electrode 30, which can be formed
using a metal having water permeability lower than silicon oxide or
the like, and therefore better able to keep water or other
potentially destructive substances out of the HEMT 200.
Accordingly, the structural and/or functional reliability of the
HEMT 200 can be increased.
[0078] As outlined above, according to the second aspect, a HEMT
capable of suppressing current collapse is provided. In addition, a
HEMT having increased structural and/or functional reliability is
provided.
(Third Aspect)
[0079] In some embodiments, a semiconductor device according to a
third aspect is similar to embodiments according to the second
aspect, except that a fourth electrode is further included which is
arranged between the second nitride semiconductor layer and the
third electrode. Furthermore, an end portion of the fourth
electrode on a second electrode side positioned between the gate
electrode and an end portion of the third electrode on the second
electrode side (e.g., as shown in FIG. 5, a right-hand end of a
fourth electrode is at a horizontal location between a gate
electrode and a right hand end of a third electrode, as discussed
in more detail below), and the fourth electrode is further
electrically connected to the gate electrode. Hereinafter,
description of some components that are the same or similar to
those described above with respect to the second aspect will be
omitted.
[0080] FIG. 5 is a schematic cross-sectional view of some
embodiments of a semiconductor device according to the third
aspect. The semiconductor device according to the third aspect is a
HEMT using a group III-V compound semiconductor.
[0081] As illustrated in FIG. 5, the HEMT 300 semiconductor device
includes: a substrate 10; a buffer layer 12; a channel layer 14
(first nitride semiconductor layer); a barrier layer 16 (second
nitride semiconductor layer); a gate insulation layer 20; a gate
electrode 22; a first insulation layer 24; a source electrode 26
(first electrode); a drain electrode 28 (second electrode); a
source field plate electrode 30 (third electrode); a second
insulation layer 32; and a gate field plate electrode 34 (fourth
electrode).
[0082] The gate field plate electrode 34 is arranged between the
barrier layer 16 and the source field plate electrode 30. An end
portion of the gate field plate electrode 34 that is arranged on
the drain electrode 28 side is positioned between the gate
electrode 22 and an end portion of the source field plate electrode
30 that is arranged on the drain electrode 28 side.
[0083] The gate field plate electrode 34 is electrically connected
to the gate electrode 22. The gate field plate electrode 34 is
physically connected to the gate electrode 22. The gate field plate
electrode 34 has a same electric potential as the gate electrode
22.
[0084] The gate field plate electrode 34 can help to alleviate an
intensity of an electric field between the source electrode 26 and
the drain electrode 28. Accordingly, current collapse of the HEMT
300 is suppressed. In addition, the gate field plate electrode 34
can help to improve the off-breakdown voltage of the HEMT 300.
[0085] The gate field plate electrode 34 is, for example, a metal
electrode. The source field plate electrode 30 has, for example, a
stacked structure of platinum (Pt)/gold (Au).
[0086] In the HEMT 300 according to the third aspect, by including
the gate field plate electrode 34, current collapse is further
suppressed, as compared to some embodiments according to the second
aspect. In addition, the off-breakdown voltage of the HEMT 300 is
improved.
[0087] As outlined above, according to the third aspect, like the
second aspect, a HEMT capable of suppressing the current collapse
is provided. In addition, a HEMT of which the off-breakdown voltage
is improved due to suppression of the current collapse is
provided.
(Fourth Aspect)
[0088] In some embodiments, a semiconductor device according to a
fourth aspect is similar to embodiments according to the third
aspect, except that a third insulation layer is further included
which is arranged between the second nitride semiconductor layer
and the fourth electrode, and the third insulation layer includes
silicon oxide having the oxygen-to-silicon atomic ratio (O/Si) of
about 1.50 or more and about 1.85 or less. Hereinafter, description
of some components that are the same or similar to those described
above with respect to the third aspect will be omitted.
[0089] FIG. 6 is a schematic cross-sectional view of some
embodiments of a semiconductor device according to the fourth
aspect. The semiconductor device according to the fourth aspect is
a HEMT using a group III-V compound semiconductor.
[0090] As illustrated in FIG. 6, the HEMT 400 semiconductor device
includes: a substrate 10; a buffer layer 12; a channel layer 14
(first nitride semiconductor layer); a barrier layer 16 (second
nitride semiconductor layer); a gate insulation layer 20; a gate
electrode 22; a first insulation layer 24; a source electrode 26
(first electrode); a drain electrode 28 (second electrode); a
source field plate electrode 30 (third electrode); a second
insulation layer 32; a gate field plate electrode 34 (fourth
electrode); and a fourth insulation layer 36.
[0091] The fourth insulation layer 36 is arranged between the
barrier layer 16 and the gate field plate electrode 34. The fourth
insulation layer 36 is arranged on the gate insulation layer 20.
The fourth insulation layer 36 is arranged between the gate
electrode 22 and the first insulation layer 24.
[0092] The fourth insulation layer 36 is a silicon oxide layer. The
fourth insulation layer 36 includes silicon oxide. The principal
component of the fourth insulation layer 36 is silicon oxide (e.g.,
a majority, by weight, of the fourth insulation layer 36 is silicon
oxide). The fourth insulation layer 36 may additionally include
other materials.
[0093] The silicon oxide included in the fourth insulation layer 36
has an oxygen-to-silicon atomic ratio (O/Si) of about 1.50 or more
and about 1.85 or less. The oxygen-to-silicon atomic ratio of the
silicon oxide included in the fourth insulation layer 36 is less
than 2 which corresponds to a stoichiometric composition of
SiO.sub.2. In the silicon oxide included in the fourth insulation
layer 36, oxygen is deficient compared to a stoichiometric
composition of SiO.sub.2.
[0094] The silicon oxide layer that is the fourth insulation layer
36 includes positive charge inside the layer. The silicon oxide
layer that is the fourth insulation layer 36 includes positive
fixed charge inside the layer. The silicon oxide layer that is the
fourth insulation layer 36 is positively charged.
[0095] The silicon oxide layer that is the fourth insulation layer
36 is, for example, formed using a CVD method. For example, for a
CVD method involving a source gas of silicon and a source gas of
oxygen, by setting a lower or reduced flow rate of the source gas
of oxygen as compared to a flow rate used for forming SiO.sub.2
having an oxygen-to-silicon atomic ratio of 2, a silicon oxide
layer in which oxygen is deficient can be formed.
[0096] An oxygen-to-silicon atomic ratio of the silicon oxide
included in the fourth insulation layer 36 can, for example, be
acquired through calculation based on a measurement according to
SIMS.
[0097] In the off-state of the HEMT 400, positions at which a high
electric field is concentrated, and trapping of electrons may
readily occur are near an end portion of the gate electrode 22 that
is arranged on the drain electrode 28 side, near an end portion of
the source field plate electrode 30 that is arranged on the drain
electrode 28 side, and near an end portion of the gate field plate
electrode 34 that is arranged on the drain electrode 28 side.
[0098] In the HEMT 400 according to the third aspect, under the
gate field plate electrode 34, the fourth insulation layer 36
including positive fixed charge is further included. Accordingly,
as compared to some embodiments according to the third aspect,
current collapse is further suppressed.
[0099] As outlined above, according to the fourth aspect, like the
third aspect, a HEMT capable of suppressing current collapse is
provided. In addition, as compared to some embodiments according to
the third aspect, a HEMT further suppressing current collapse is
provided.
(Fifth Aspect)
[0100] In some embodiments, a semiconductor device according to a
fifth aspect is similar to some embodiments according to the first
aspect except that the gate insulation layer that is arranged
between the second nitride semiconductor layer and the gate
electrode and includes silicon oxide containing nitrogen is further
included. Hereinafter, description of some components that are the
same or similar to those described above with respect to the first
aspect will be omitted.
[0101] FIG. 7 is a schematic cross-sectional view of embodiments of
a semiconductor device according to the fifth aspect. The
semiconductor device according to the first aspect is a HEMT using
a group III-V compound semiconductor.
[0102] As illustrated in FIG. 7, the HEMT 500 semiconductor device
includes: a substrate 10; a buffer layer 12; a channel layer 14
(first nitride semiconductor layer); a barrier layer 16 (second
nitride semiconductor layer); a gate insulation layer 20; a gate
electrode 22; a first insulation layer 24; a source electrode 26
(first electrode); a drain electrode 28 (second electrode); and a
source field plate electrode 30 (third electrode).
[0103] The gate insulation layer 20 has a stacked structure of a
first insulation film 20a and a second insulation film 20b.
[0104] The first insulation film 20a is, for example, formed using
silicon nitride.
[0105] The second insulation film 20b is a silicon oxide film
containing nitrogen. The second insulation film 20b includes
silicon oxide containing nitrogen. The nitrogen-to-oxygen atomic
ratio (N/O) of the silicon oxide included in the second insulation
film 20b is, for example, about 0.1 or more and about 0.8 or
less.
[0106] The second insulation film 20b includes nitrogen and thus,
includes positive charge inside the film. The second insulation
film 20b includes positive fixed charge inside the film. The second
insulation film 20b is positively charged.
[0107] The second insulation film 20b can, for example, be formed
by forming a silicon oxide film and then performing a heat
treatment thereof in an ammonia (NH.sub.3) atmosphere.
[0108] The nitrogen-to-oxygen atomic ratio (N/O) of the silicon
oxide included in the second insulation film 20b can, for example,
be acquired through calculation based on a measurement according to
SIMS.
[0109] In embodiments of the HEMT 500 according to the fifth
aspect, when the second insulation film 20b including positive
fixed charge is used, the interface between the barrier layer 16
and the gate insulation layer 20 is filled with electrons in
advance of stress being applied. Accordingly, as compared to the
first embodiment, the current collapse is further suppressed.
[0110] In addition, the interface between the barrier layer 16 and
the gate insulation layer 20 right below the gate electrode 22 is
also filled with electrons in advance of stress being applied.
Accordingly, a threshold voltage variation of the HEMT 500
according to the trapping of electrons right below the gate
electrode 22 is also suppressed.
[0111] The nitrogen-to-oxygen atomic ratio (N/O) of the silicon
oxide included in the second insulation film 20b is preferably
about 0.1 or more and about 0.8 or less and is more preferably
about 0.3 or more and about 0.6 or less. In a case where the atomic
ratio is below the above-described range, there may be a concern
that a sufficient effect of the suppression of current collapse and
a sufficient effect of the suppression of threshold variations are
not achieved. On the other hand, in a case where the atomic ratio
is above the above-described range, there is a concern that a gate
leak current exceeds an acceptable range.
[0112] As outlined above, in some embodiments according to the
fifth aspect, like in embodiments according to the first aspect, a
HEMT capable of suppressing current collapse is provided. In
addition, a HEMT capable of suppressing threshold voltage
variations is provided.
(Sixth Aspect)
[0113] Some embodiments of a semiconductor device according to a
sixth aspect are similar to some embodiments according to the first
aspect except that a third nitride semiconductor layer of a p type
arranged between the second nitride semiconductor layer and the
gate electrode is further included. Hereinafter, description of
some components that are the same or similar to those described
above with respect to the first aspect will be omitted.
[0114] FIG. 8 is a schematic cross-sectional view of some
embodiments of a semiconductor device according to the sixth
aspect. The semiconductor device according to the sixth aspect is a
HEMT using a group III-V compound semiconductor.
[0115] As illustrated in FIG. 8, the HEMT 600 semiconductor device
includes: a substrate 10; a buffer layer 12; a channel layer 14
(first nitride semiconductor layer); a barrier layer 16 (second
nitride semiconductor layer); a gate insulation layer 20; a gate
electrode 22; a first insulation layer 24; a source electrode 26
(first electrode); a drain electrode 28 (second electrode); a
source field plate electrode 30 (third electrode); and a p-type
layer 40 (third nitride semiconductor layer).
[0116] The p-type layer 40 is arranged between the barrier layer 16
and the gate electrode 22. The p-type layer 40 is arranged in
contact with the barrier layer 16.
[0117] The p-type layer 40 is, for example, formed using gallium
nitride (GaN) of the p-type.
[0118] The HEMT 600 according to the sixth aspect is a HEMT having
a junction gate structure including the p-type layer 40. By
including the p-type layer 40, a normally-off characteristic (a
characteristic of being off by default) can be realized. By the
normally-off characteristic, a current does not flow between the
source and the drain in a state in which a voltage is not applied
to the gate electrode.
[0119] As outlined above, in some embodiments according to the
sixth aspect, as in some embodiments according to the first aspect,
a HEMT capable of suppressing current collapse is provided. In
addition, a HEMT capable of realizing the normally-off
characteristic is provided.
(Seventh Aspect)
[0120] Some embodiments of a semiconductor device according to a
seventh aspect include: a first nitride semiconductor layer; a
second nitride semiconductor layer that is arranged on the first
nitride semiconductor layer and has a band gap larger than the
first nitride semiconductor layer; a gate electrode that is
arranged on the first nitride semiconductor layer; a first
electrode that is electrically connected to the first nitride
semiconductor layer; a second electrode that allows the gate
electrode to be positioned between the first electrode and the
second electrode, and is electrically connected to the first
nitride semiconductor layer; a first insulation layer that is
arranged between the gate electrode and the second electrode,
allows the second nitride semiconductor layer to be positioned
between the first nitride semiconductor layer and the first
insulation layer, and includes silicon oxide containing nitrogen;
and a second insulation layer that is arranged between the first
insulation layer and the second electrode and includes silicon
oxide having a nitrogen density lower than the silicon oxide
included in the first insulation layer.
[0121] Some embodiments of a semiconductor device according to the
seventh aspect are similar to some embodiments according to the
second aspect except that a material of the first insulation layer
is different in at least some respects. Hereinafter, description of
some components that are the same or similar to those described
above with respect to the second aspect will be omitted.
[0122] FIG. 9 is a schematic cross-sectional view of some
embodiments of a semiconductor device according to the seventh
aspect. The semiconductor device according to the seventh aspect is
a HEMT using a group III-V compound semiconductor.
[0123] As illustrated in FIG. 9, the HEMT 700 semiconductor device
includes: a substrate 10; a buffer layer 12; a channel layer 14
(first nitride semiconductor layer); a barrier layer 16 (second
nitride semiconductor layer); a gate insulation layer 20; a gate
electrode 22; a first insulation layer 24; a source electrode 26
(first electrode); a drain electrode 28 (second electrode); a
source field plate electrode 30 (third electrode); and a second
insulation layer 32.
[0124] The first insulation layer 24 is arranged between an end
portion of the gate electrode 22 that is arranged on the drain
electrode 28 side and an end portion of the source field plate
electrode 30 that is arranged on the drain electrode 28 side, and
is interposed between the source field plate electrode 30 and the
barrier layer 16. In some embodiments, the first insulation layer
24 is selectively arranged in an area between the gate electrode 22
and the drain electrode 28. In some embodiments, the first
insulation layer 24 is selectively arranged in an area below the
source field plate electrode 30.
[0125] The first insulation layer 24 is a silicon oxide layer. The
first insulation layer 24 includes silicon oxide. The principal
component of the first insulation layer 24 is silicon oxide (e.g.,
a majority, by weight, of the first insulation layer 24 is silicon
oxide). The first insulation layer 24 may additionally include
other materials.
[0126] The first insulation layer 24 is a silicon oxide layer
containing nitrogen. The first insulation layer 24 includes silicon
oxide containing nitrogen. The nitrogen-to-oxygen atomic ratio
(N/O) of the silicon oxide included in the first insulation layer
24 is, for example, about 0.1 or more and about 0.8 or less.
[0127] The first insulation layer 24 includes nitrogen, and thus
includes positive charge inside the layer. The first insulation
layer 24 includes positive fixed charge inside the layer. The first
insulation layer 24 is positively charged.
[0128] A portion of the second insulation layer 32 is arranged
between the first insulation layer 24 and the drain electrode 28.
In addition, a portion of the second insulation layer 32 is
arranged between the first insulation layer 24 and the source
electrode 26. At least a portion of the first insulation layer 24
is arranged on the gate insulation layer 20.
[0129] The second insulation layer 32 is a silicon oxide layer. The
second insulation layer 32 includes silicon oxide. The principal
component of the second insulation layer 32 is silicon oxide (e.g.,
a majority, by weight, of the second insulation layer 32 is silicon
oxide). The second insulation layer 32 may additionally include
other materials.
[0130] The density of nitrogen of the silicon oxide included in the
second insulation layer 32 is lower than that of silicon oxide
included in the first insulation layer 24. In other words, the
nitrogen-to-oxygen atomic ratio (N/O) of the silicon oxide included
in the second insulation layer 32 is lower than that of the silicon
oxide included in the first insulation layer 24. The
nitrogen-to-oxygen atomic ratio (N/O) of the silicon oxide included
in the second insulation layer 32 is, for example, about zero or
more and less than about 0.1.
[0131] The density of positive charge of the second insulation
layer 32 is lower than that of the first insulation layer 24.
[0132] The nitrogen-to-oxygen atomic ratios (N/O) of the silicon
oxide included in the first insulation layer 24 and the second
insulation layer 32 can, for example, be acquired through
calculation based on measurements according to SIMS. The densities
of nitrogen of the silicon oxide included in the first insulation
layer 24 and the second insulation layer 32 can, for example, be
acquired through measurements according to SIMS. The magnitude
relation between the densities of nitrogen included in the silicon
oxide included in the first insulation layer 24 and the second
insulation layer 32 can, for example, be measured using electron
energy loss spectroscopy (EELS).
[0133] In some embodiments of the HEMT 700 according to the seventh
aspect, like in some embodiments according to the second aspect, as
the first insulation layer 24 includes positive fixed charge inside
the layer, current collapse can be suppressed. However, since
silicon oxide containing nitrogen can correspond to an increased
leak current, in a case where the silicon oxide is applied to an
insulation layer, there is a concern that device characteristics of
the HEMT 700 such as a standby current and power consumption are
degraded.
[0134] In the off-state of the HEMT 700, positions at which a high
electric field is concentrated, and trapping of electrons may
readily occur are near an end portion of the gate electrode 22 that
is arranged on the drain electrode 28 side and near an end portion
of the source field plate electrode 30 that is arranged on the
drain electrode 28 side. In some embodiments according to the
seventh aspect, in the HEMT 700, in an area located near such
positions, the first insulation layer 24 including positive fixed
charge is selectively arranged. Accordingly, current collapse can
be effectively suppressed without degrading some other device
characteristics.
[0135] The nitrogen-to-oxygen atomic ratio (N/O) of the silicon
oxide included in the first insulation layer 24 is preferably about
0.1 or more and about 0.8 or less and is more preferably about 0.3
or more and about 0.6 or less. In a case where the atomic ratio is
below the above-described range, there is a concern that a
sufficient effect of the suppression of current collapse and a
sufficient effect of the suppression of threshold variations are
not achieved. On the other hand, in a case where the atomic ratio
is above the above-described range, there is a concern that a leak
current of the insulation layer exceeds an acceptable range.
[0136] As outlined above, in some embodiments according to the
seventh aspect, like in some embodiments according to the second
aspect, a HEMT capable of suppressing current collapse is provided.
In addition, a HEMT capable of suppressing the degradation of the
device characteristics is provided.
Eighth Embodiment
[0137] In some embodiments, a semiconductor device according to an
eighth aspect is similar to some embodiments according to the
seventh aspect except that a gate insulation layer is further
included which is arranged between a second nitride semiconductor
layer and a gate electrode and includes silicon oxide containing
nitrogen. Hereinafter, description of some components that are the
same or similar to those described above with respect to the
seventh aspect will be omitted.
[0138] FIG. 10 is a schematic cross-sectional view of some
embodiments of a semiconductor device according to the eighth
aspect. The semiconductor device according to the eighth aspect is
a HEMT using a group III-V compound semiconductor.
[0139] As illustrated in FIG. 10, the HEMT 800 semiconductor device
includes: a substrate 10; a buffer layer 12; a channel layer 14
(first nitride semiconductor layer); a barrier layer 16 (second
nitride semiconductor layer); a gate insulation layer 20; a gate
electrode 22; a first insulation layer 24; a source electrode 26
(first electrode); a drain electrode 28 (second electrode); a
source field plate electrode 30 (third electrode); and a second
insulation layer 32.
[0140] The gate insulation layer 20 has a stacked structure of a
first insulation film 20a and a second insulation film 20b.
[0141] The first insulation film 20a is, for example, formed using
silicon nitride.
[0142] The second insulation film 20b is a silicon oxide film
containing nitrogen. The second insulation film 20b includes
silicon oxide containing nitrogen. The nitrogen-to-oxygen atomic
ratio (N/O) of the silicon oxide included in the second insulation
film 20b is, for example, about 0.1 or more and about 0.8 or
less.
[0143] The second insulation film 20b includes nitrogen and thus,
includes positive charge inside the film. The second insulation
film 20b includes positive fixed charge inside the film. The second
insulation film 20b is positively charged.
[0144] The silicon oxide film containing nitrogen can be, for
example, formed by forming a silicon oxide film and then,
performing a heat treatment thereof in an ammonia (NH.sub.3)
atmosphere.
[0145] The nitrogen-to-oxygen atomic ratio (N/O) of the silicon
oxide included in the second insulation film 20b can be, for
example, acquired through calculation based on a measurement
according to SIMS.
[0146] In some embodiments of the HEMT 800 according to the eighth
aspect, when the second insulation film 20b including positive
fixed charge is used, the interface between the barrier layer 16
and the gate insulation layer 20 is filled with electrons in
advance of a stress being applied. Accordingly, as compared to some
embodiments according to the first aspect, the current collapse is
further suppressed.
[0147] In addition, the interface between the barrier layer 16 and
the gate insulation layer 20 immediately below the gate electrode
22 is also filled with electrons in advance of stress being
applied. Accordingly, a threshold voltage variation of the HEMT 800
due to the trapping of electrons immediately below the gate
electrode 22 is also suppressed.
[0148] The nitrogen-to-oxygen atomic ratio (N/O) of the silicon
oxide included in the second insulation film 20b is preferably
about 0.1 or more and about 0.8 or less and is more preferably
about 0.3 or more and about 0.6 or less. In a case where the atomic
ratio is below the above-described range, there is a concern that a
sufficient effect of the suppression of current collapse and a
sufficient effect of the suppression of threshold variations are
not obtained. On the other hand, in a case where the atomic ratio
is above the above-described range, there is a concern that a gate
leak current exceeds an acceptable range.
[0149] As outlined above, in some embodiments according to the
eighth aspect, like in some embodiments according to the seventh
aspect, a HEMT capable of suppressing current collapse is provided.
In addition, a HEMT capable of suppressing threshold voltage
variations is provided.
[0150] Some embodiments according to the second aspect in which the
silicon oxide layer having an oxygen-to-silicon atomic ratio (O/Si)
of about 1.50 or more and about 1.85 or less as the insulation
layer including positive charge have been described. Some
embodiments according to the seventh aspect in which the silicon
oxide layer containing nitrogen as the insulation layer including
positive charge have been described. By changing such materials,
other insulation layers including positive charge may be
implemented. An insulation layer including positive charge can be
implemented based on the material of the insulation layer.
[0151] In some embodiments according to the first through eighth
aspects, while gallium nitride or aluminum gallium nitride has been
described as the material of the nitride semiconductor layer by way
of example, other materials may be alternatively or additionally
implemented, such as indium gallium nitride, indium aluminum
nitride, and/or indium aluminum gallium nitride containing indium
(In). In some embodiments, aluminum nitride may be applied as the
material of the nitride semiconductor layer.
[0152] In embodiments according to the first to eighth aspects,
while undoped aluminum gallium nitride has been described by way of
example as the material of the barrier layer 16, other materials
may be alternatively or additionally implemented, such as aluminum
gallium nitride of the n-type.
[0153] Some embodiments according to the first to eighth aspects in
which the gate insulation layer 20 is arranged between the barrier
layer 16 and the first insulation layer 24 have been described.
However, in some embodiments a configuration in which the first
insulation layer 24 is directly in contact with the barrier layer
16 may be employed.
[0154] In some embodiments according to the first to eighth
aspects, the HEMT having a planar gate structure including the gate
insulation layer or the HEMT having the junction gate structure
including the p-type layer have been described by way of example.
However, in some embodiments the HEMT may have any other structure
appropriate structure such as a HEMT having a Schottky gate
structure or a HEMT having a recess gate structure including a gate
electrode inside a recess arranged in a channel layer or a barrier
layer.
[0155] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the present disclosure. Indeed, the
embodiments described herein may be embodied in a variety of other
forms; furthermore, various omissions, substitutions and changes in
the form of the embodiments described herein may be made without
departing from the spirit of the present disclosure. The
accompanying claims and their equivalents are intended to cover
such forms or modifications as would fall within the scope and
spirit of the present disclosure. Moreover, some or all of the
above described embodiments can be combined when implemented.
* * * * *