U.S. patent application number 15/799823 was filed with the patent office on 2018-02-22 for systems and methods for atomic film data storage.
The applicant listed for this patent is Elwha LLC. Invention is credited to Hon Wah Chin, Howard Lee Davidson, Roderick A. Hyde, Jordin T. Kare, Nicholas F. Pasch, Robert C. Petroski, David B. Tuckerman, Lowell L. Wood, JR..
Application Number | 20180053528 15/799823 |
Document ID | / |
Family ID | 52585177 |
Filed Date | 2018-02-22 |
United States Patent
Application |
20180053528 |
Kind Code |
A1 |
Chin; Hon Wah ; et
al. |
February 22, 2018 |
SYSTEMS AND METHODS FOR ATOMIC FILM DATA STORAGE
Abstract
The present disclosure provides systems and methods associated
with data storage using atomic films, such as graphene, boron
nitride, or silicene. A platter assembly may include at least one
platter that has one or more substantially planar surfaces. One or
more layers of a monolayer atomic film, such as graphene, may be
positioned on a planar surface. Data may be stored on the atomic
film using one or more vacancies, dopants, defects, and/or
functionalized groups (presence or lack thereof) to represent one
of a plurality of states in a multi-state data representation
model, such as a binary, a ternary, or another base N data storage
model. A read module may detect the vacancies, dopants, and/or
functionalized groups (or a topographical feature resulting
therefrom) to read the data stored on the atomic film.
Inventors: |
Chin; Hon Wah; (Palo Alto,
CA) ; Davidson; Howard Lee; (San Carlos, CA) ;
Hyde; Roderick A.; (Redmond, WA) ; Kare; Jordin
T.; (Seattle, WA) ; Pasch; Nicholas F.;
(Bellevue, WA) ; Petroski; Robert C.; (Seattle,
WA) ; Tuckerman; David B.; (Lafayette, CA) ;
Wood, JR.; Lowell L.; (Bellevue, WA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Elwha LLC |
Bellevue |
WA |
US |
|
|
Family ID: |
52585177 |
Appl. No.: |
15/799823 |
Filed: |
October 31, 2017 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
14931629 |
Nov 3, 2015 |
9805763 |
|
|
15799823 |
|
|
|
|
14013828 |
Aug 29, 2013 |
9177592 |
|
|
14931629 |
|
|
|
|
14013836 |
Aug 29, 2013 |
9177600 |
|
|
14013828 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11B 25/043 20130101;
G11B 23/0057 20130101; G11B 23/0064 20130101; G11B 23/0078
20130101; G11B 7/2548 20130101; G11B 7/24035 20130101 |
International
Class: |
G11B 25/04 20060101
G11B025/04; G11B 23/00 20060101 G11B023/00; G11B 7/24035 20130101
G11B007/24035; G11B 7/2548 20130101 G11B007/2548 |
Claims
1. A data storage device, comprising: a platter assembly comprising
at least one platter that has at least one substantially planar
surface; a silicene film positioned on at least a portion of a
substantially planar surface of a platter of the platter assembly,
wherein the silicene film comprises a lattice structure; and a
plurality of functional groups attached via functionalization to
the silicene film, wherein one or more functional groups are
configured to represent one of at least two possible states, and
wherein the silicene film is configured to store readable data in
the at least two possible states using the attached functional
groups; at least one read module configured to read the readable
data on the substantially planar surface of the platter by
detecting each of the at least two states, at least one of which
states is represented by the functional groups; and a movement
assembly configured to move at least one of the at least one read
module and the platter assembly with respect to the other.
2. The data storage device of claim 1, wherein the movement
assembly comprises a rotational assembly configured to rotate at
least one of the at least one read module and the platter assembly
with respect to the other.
3. The data storage device of claim 1, wherein the platter assembly
is in the form of a tape configured to move relative to the read
module.
4. The data storage device of claim 1, wherein the at least one
read module is part of an actuator assembly configured to pivot the
at least one read module within a parallel plane to that of the
substantially planar surface of the platter.
5. The data storage device of claim 1, wherein the platter consists
essentially of carbon.
6. The data storage device of claim 1, wherein the platter
comprises silicon crystal.
7. The data storage device of claim 1, wherein the platter
comprises metal.
8. The data storage device of claim 1, wherein the platter
comprises plastic.
9. The data storage device of claim 1, wherein the platter
comprises a plastic ribbon.
10. The data storage device of claim 1, wherein the platter
comprises a plastic disk.
11. The data storage device of claim 1, wherein the presence of a
functional group represents a first state of the at least two
possible states and the lack of a functional group represents a
second of the at least two possible states.
12. The data storage device of claim 1, wherein the silicene film
is configured to store the readable data as binary (base 2) data
values with each functional group representing one of two possible
states.
13. The data storage device of claim 1, wherein a first type of
functional group is configured to represent a first state of three
possible states, a second type of functional group is configured to
represent a second state of three possible states, and wherein the
readable data is configured to be stored on the silicene film as
ternary (base 3) data values.
14. The data storage device of claim 1, wherein each functional
group is configured to represent a unique state of N possible
states, wherein N is an integer greater than 1, and wherein the
readable data is configured to be stored on the silicene film as
N-based data values.
15. The data storage device of claim 14, wherein the silicene film
is configured to store the readable data with the functional groups
representing one of the N possible states based on size of a
functionalized region of the silicene film.
16. The data storage device of claim 14, wherein the silicene film
is configured to store the readable data with the functional groups
representing one of the N possible states based on orientation of a
functionalized region of the silicene film.
17. The data storage device of claim 14, wherein the silicene film
is configured to store the readable data with the functional groups
representing one of the N possible states based on shape of a
functionalized region of the silicene film.
18. The data storage device of claim 1, wherein a functional group
comprises one or more of hydrogen, boron, carbon, nitrogen, oxygen,
fluorine, and tungsten.
19. The data storage device of claim 1, wherein a functional group
comprises a nanoparticle.
20. The data storage device of claim 1, wherein the silicene film
is functionalized with linker molecule and the readable data is
configured to be encoded by joining a second functional molecule to
the linker molecule.
21. The data storage device of claim 1, wherein at least one of the
at least two possible states is defined by a plurality of proximate
functional groups.
22. The data storage device of claim 1, wherein at least one of the
at least two possible states is defined by a spatial pattern of
functional groups.
23. The data storage device of claim 1, wherein at least one of the
at least two possible states is defined by a predefined mixture of
different functional groups.
24. The data storage device of claim 1, further comprising: a data
file comprising position data for one or more of the functional
groups in which readable data is stored.
25. The data storage device of claim 1, further comprising: a data
file comprising position data for one or more regions of the
silicene film not configured to store readable data.
26. A data storage device, comprising: a platter assembly
comprising at least one platter that has at least one substantially
planar surface; a silicene film positioned on at least a portion of
a substantially planar surface of a platter of the platter
assembly, wherein the silicene film comprises a lattice structure;
and a plurality of vacancy regions formed in the lattice structure
of the silicene film, wherein each vacancy region comprises at
least one atom missing from the lattice structure of the silicene
film, wherein each of the plurality of vacancy regions is
configured to represent one of at least two possible states, and
wherein the silicene film is configured to store readable data in
the at least two possible states using the vacancy regions; at
least one read module configured to read the readable data on the
substantially planar surface of the platter by detecting each of
the at least two states, at least one of which states is
represented by the vacancy regions; and a movement assembly
configured to move at least one of the at least one read module and
the platter assembly with respect to the other.
Description
[0001] If an Application Data Sheet (ADS) has been filed on the
filing date of this application, it is incorporated by reference
herein. Any applications claimed on the ADS for priority under 35
U.S.C. .sctn..sctn.119, 120, 121, or 365(c), and any and all
parent, grandparent, great-grandparent, etc. applications of such
applications, are also incorporated by reference, including any
priority claims made in those applications and any material
incorporated by reference, to the extent such subject matter is not
inconsistent herewith.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0002] The present application claims the benefit of the earliest
available effective filing date(s) from the following listed
application(s) (the "Priority Applications"), if any, listed below
(e.g., claims earliest available priority dates for other than
provisional patent applications or claims benefits under 35 U.S.C.
.sctn.119(e) for provisional patent applications, for any and all
parent, grandparent, great-grandparent, etc. applications of the
Priority Application(s)). In addition, the present application is
related to the "Related Applications," if any, listed below.
PRIORITY APPLICATIONS
[0003] This application is a continuation of U.S. patent
application Ser. No. 14/931,629, titled "Systems and Methods for
Atomic Film Data Storage," naming Hon Wah Chin, Howard Lee
Davidson, Roderick A. Hyde, Jordin T. Kare, Nicholas F. Pasch,
Robert C. Petroski, David B. Tuckerman, and Lowell L. Wood, Jr. as
inventors, filed Nov. 3, 2015, which is a continuation of U.S.
patent application Ser. No. 14/013,828, titled "Systems and Methods
for Atomic Film Data Storage," naming Hon Wah Chin, Howard Lee
Davidson, Roderick A. Hyde, Jordin T. Kare, Nicholas F. Pasch,
Robert C. Petroski, David B. Tuckerman, and Lowell L. Wood, Jr. as
inventors, filed Aug. 29, 2013. U.S. patent application Ser. No.
14/931,629 is also a continuation of U.S. patent application Ser.
No. 14/013,836, titled "Systems and Methods for Atomic Film Data
Storage," naming Hon Wah Chin, Howard Lee Davidson, Roderick A.
Hyde, Jordin T. Kare, Nicholas F. Pasch, Robert C. Petroski, David
B. Tuckerman, and Lowell L. Wood, Jr. as inventors, filed Aug. 29,
2013 all applications of which are incorporated herein by
reference.
RELATED APPLICATIONS
[0004] U.S. patent application Ser. No. 14/013,828, titled "Systems
and Methods for Atomic Film Data Storage," naming Hon Wah Chin,
Howard Lee Davidson, Roderick A. Hyde, Jordin T. Kare, Nicholas F.
Pasch, Robert C. Petroski, David B. Tuckerman, and Lowell L. Wood,
Jr. as inventors, filed 29 Aug. 2013, with attorney docket no.
46076/140, is related to the present application.
[0005] U.S. patent application Ser. No. 14/013,845, titled "Systems
and Methods for Atomic Film Data Storage," naming Hon Wah Chin,
Howard Lee Davidson, Roderick A. Hyde, Jordin T. Kare, Nicholas F.
Pasch, Robert C. Petroski, David B. Tuckerman, and Lowell L. Wood,
Jr. as inventors, filed 29 Aug. 2013, with attorney docket no.
46076/171, is related to the present application.
[0006] U.S. patent application Ser. No. 14/013,836, titled "Systems
and Methods for Atomic Film Data Storage," naming Hon Wah Chin,
Howard Lee Davidson, Roderick A. Hyde, Jordin T. Kare, Nicholas F.
Pasch, Robert C. Petroski, David B. Tuckerman, and Lowell L. Wood,
Jr. as inventors, filed 29 Aug. 2013, with attorney docket no.
46076/140, is related to the present application.
[0007] If the listings of applications provided above are
inconsistent with the listings provided via an ADS, it is the
intent of the Applicant to claim priority to each application that
appears in the Priority Applications section of the ADS and to each
application that appears in the Priority Applications section of
this application.
[0008] All subject matter of the Priority Applications and the
Related Applications and of any and all parent, grandparent,
great-grandparent, etc. applications of the Priority Applications
and the Related Applications, including any priority claims, is
incorporated herein by reference to the extent such subject matter
is not inconsistent herewith.
TECHNICAL FIELD
[0009] This disclosure relates to atomic film data storage. More
specifically, this disclosure relates to systems and methods for
storing data using one or more of vacancies, dopants, defects, or
functional groups in conjunction with an atomic film to represent
bits of data storage. Examples of monolayer atomic films include
graphene, hexagonal boron nitride, and silicene.
SUMMARY
[0010] The present disclosure provides various systems and methods
associated with data storage using atomic films, such as monolayer
atomic films having uniform lattice structures. Examples of atomic
films include graphene, hexagonal boron nitride, and silicene. As
provided herein, various other atomic films having uniform lattice
structures may be utilized as well. In some embodiments, a platter
assembly may include at least one platter that has one or more
substantially planar surfaces. One or more layers of a monolayer
atomic film may be positioned on a planar surface and used to store
data. For instance, a graphene film may be positioned on at least a
portion of a substantially planar surface of a platter
assembly.
[0011] In some embodiments, vacancies in the lattice structure of
the atomic film may represent one or more possible states, such as
for example a 0 or a 1 in a binary data storage system. In some
embodiments, one or more dopants may be positioned in the lattice
structure to represent one or more possible states. Similarly, a
functional group on the lattice structure of the monolayer atomic
film may be used to represent one or more possible states. In some
embodiments, the monolayer atomic film may be fully functionalized
and the removal of functional groups may be used to represent one
or more possible states. In some embodiments, one or more lattice
defects may be used to represent one or more possible states.
[0012] A read module may be configured to detect an anomaly in a
lattice structure that represents (alone or in combination with
other anomalies) bits of data. For example, a lattice anomaly may
include one or more of a vacancy in a lattice structure, a dopant
in a lattice structure, a defect in the lattice structure, and/or
the presence of a functionalized group on the monolayer atomic
film. As described above, one or more vacancies, dopants, defects,
and/or functionalized groups (presence or lack thereof) may be used
to represent one of at least two possible states (e.g., as bits of
data storage). Thus, the monolayer atomic film may be used to store
readable data in the at least two possible states that can be
detected/read by a read module.
[0013] Additionally, a movement assembly may move at least one of
the read module and the platter assembly with respect to the other.
For instance, the platter assembly may be a disk that rotates with
respect to a read module. In one embodiment, the read module and
the platter assembly may be configured to function similar to
single- or multi-platter magnetic disk drives, optical media, and
or tape drive storage.
[0014] An example embodiment includes a graphene film deposited on
a planar surface of a platter. One or more of vacancies, dopants,
defects, and/or functionalized groups may be used to represent 0s
and 1s for binary data storage. The platter may then be read by a
read module configured to detect the vacancies, dopants, defects,
and/or functionalized groups. In various embodiments, a write
module may be configured to write 0s and 1s by adding and/or
removing vacancies, dopants, lattice defects, and/or functionalized
groups.
[0015] In some embodiments, the write module may or may not have
erase/reset capabilities. Depending on the functionalities and
granularity of the write module, various techniques used for solid
state memory devices, such as erase blocks larger than individual
sectors, may be utilized to allow relatively larger regions of the
graphene layer (or other monolayer atomic film) to be erased (i.e.,
remove all vacancies, remove dopants, remove defects, remove
functionalized groups, and/or re-functionalize the entire region).
In some embodiments a block of data may be virtually erased by
removing its location from a data file listing locations of stored
data, or by adding its location to a data file listing unused
locations.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016] FIG. 1A illustrates a substantially planar surface of a
platter with a monolayer atomic film having a hexagonal lattice
structure.
[0017] FIG. 1B illustrates a close-up view of the hexagonal lattice
structure of the monolayer atomic film of FIG. 1A.
[0018] FIG. 2A illustrates a graphene film including two layers of
a graphene.
[0019] FIG. 2B illustrates an atomic film including two layers
offset with respect to one another.
[0020] FIGS. 3A-3E illustrate various embodiments of hexagonal
monolayer atomic films.
[0021] FIG. 4A illustrates a read assembly configured to read data
encoded on an atomic film using one or more of vacancies, dopants,
and functional groups.
[0022] FIG. 4B illustrates an alternative embodiment of a read
assembly and a platter with an atomic film thereon.
[0023] FIG. 5 illustrates a plurality of disjointed patches of a
monolayer atomic film on a planar surface of a platter.
[0024] FIG. 6A illustrates a portion of a platter with a monolayer
atomic film on the surface with dopants used to represent one or
more possible states.
[0025] FIG. 6B illustrates a portion of a platter with a monolayer
atomic film on the surface with functional groups used to represent
one or more possible states.
[0026] FIG. 7A illustrates an atomic film with a 5-7-7-5 lattice
defect used to represent one or more possible states.
[0027] FIG. 7B illustrates another example of a lattice defect used
to represent a state in a multi-state data storage.
[0028] FIG. 7C illustrates a topographical feature (a protrusion)
used to represent one or more possible states.
[0029] FIG. 8 illustrates a 5-8-5 lattice defect used to represent
one or more possible states.
[0030] FIG. 9 illustrates a topographical feature caused by defects
in the lattice structure or vacancies used to represent one or more
possible data states.
[0031] FIG. 10A illustrates vacancies in a lattice structure used
to represent one or more possible data states.
[0032] FIG. 10B illustrates another example of a vacancy in a
lattice structure used to represent one or more possible data
states.
[0033] FIG. 11 illustrates vacancies used in a portion of a lattice
structure used to represent a sequence of 0s and 1s.
[0034] FIG. 12 illustrates a plurality of functional groups used to
represent a state in a multi-state data storage device.
[0035] FIG. 13A illustrates a fully functionalized graphene
film.
[0036] FIG. 13B illustrates an alternative embodiment of a fully
functionalized graphene film.
DETAILED DESCRIPTION
[0037] According to the various embodiments described herein, data
may be stored using a monolayer atomic film, such as graphene,
hexagonal boron nitride, or silicene. Modifications to the lattice
structure of the monolayer atomic film may be used to represent one
or more states in a multi-state data representation system. For
example, a dopant or doped region may be used to represent a 1 in a
binary data representation system and an un-doped region or normal
lattice point may be used to represent a 0 in the binary data
system.
[0038] A monolayer atomic film may be configured to store readable
data as binary data values with, for example, the presence of a
vacancy in a vacancy region representing a first state and a lack
of a vacancy in the vacancy region representing a second state. In
other embodiments, various characteristics (e.g., quantity, size,
configuration, orientation, etc.) of vacancies, dopants, functional
groups, topological features, Stone-Walls defects, and/or other
lattice anomalies may be used to represent any of N possible states
in an N-based data storage system, where N is any integer greater
than 1.
[0039] In some embodiments, a platter assembly may include one or
more platters each having one or more substantially planar
surfaces. A monolayer atomic film, such as graphene, may be
positioned on at least one of the substantially planar surfaces.
Using graphene as an example, multiple layers of graphene may be
positioned on a planar surface. In some embodiments, the uppermost
surface may be used to store data. In other embodiments, each layer
may be used to store data. In some embodiments, multiple layers may
be separated by a spacer.
[0040] The platter may comprise carbon, silicon crystal, metal,
and/or plastic. For example, the platter may comprise a plastic
ribbon, a plastic disk, and/or multiple layers of graphene or
hexagonal boron nitride. The platter may be in the form of a disk,
a tape, or other recognizable storage media, although any shape
and/or size may be implemented in conjunction with the various
embodiments provided herein.
[0041] In some embodiments, a portion of the monolayer atomic film
may be positioned off of the platter assembly. For instance a
platter may include one or more holes or may be only a framework
for depositing/positioning the monolayer atomic film. In such
embodiments, the monolayer atomic film may span gaps or holes in
the platter and/or overhang edges of the platter.
[0042] The monolayer atomic film may be deposited on the planar
surface as a single continuous film. In other embodiments, the
monolayer atomic film may be deposited as a plurality of
discontinuous or continuous patches of a monolayer atomic film. The
discontinuous patches may be physically joined along a grain
boundary or an irregular lattice boundary.
[0043] The plurality of patches may be physically separated by a
gap or overlap one another. In various embodiments, the patches may
be less than a square micron, may be between one square micron and
100 square millimeters, or may be greater than 100 square
millimeters. The patches may be mapped to facilitate reading the
data stored on the monolayer graphene film. For example, each of
the plurality of patches may be mapped based on their location on
the platter assembly, their location relative to another patch, an
orientation, and/or a thickness.
[0044] In some embodiments, a vacancy region in the lattice
structure of the atomic film may represent one or more possible
states, such as for example a 0 or a 1 in a binary data storage
system. In some embodiments, one or more dopants may be positioned
in the lattice structure to represent one or more possible states.
Similarly, a functional group on the lattice structure of the
monolayer atomic film may be used to represent one or more possible
states. In some embodiments, the monolayer atomic film may be fully
functionalized and the removal of one or more functional groups may
be used to represent one or more possible states.
[0045] In some embodiments, one or more lattice defects may be used
to represent one or more possible states. Examples of lattice
defects in a hexagonal lattice structure of graphene include a
carbon ring with more than six carbon atoms, a carbon ring with
fewer than six carbon atoms, a 5-7-7-5 cluster of carbon atoms, and
a 5-8-5 cluster of carbon atoms.
[0046] A description of these and other defects in graphene and
other two dimensional materials is presented in Humberto Terrones
et al., The role of defects and doping in 2D graphene sheets and 1D
nanoribbons, Reports on Progress in Physics 062501 (2012), which is
hereby incorporated by reference in its entirety, and Florian
Banhart et al., Structural Defects in Graphene, ACS Nano 5, 26
(2011), which is also hereby incorporated by reference in its
entirety.
[0047] A read module may be configured to detect one or more of a
vacancy region in a lattice structure, a dopant in a lattice
structure, a topological feature, a defect, and/or the presence of
a functionalized group on the monolayer atomic film. As described
above, one or more vacancies, dopants, topological features,
defects, and/or functionalized groups (presence or lack thereof)
may be used to represent one of at least two possible states
allowing the monolayer atomic film to store readable data in the at
least two possible states.
[0048] Thus, by detecting a vacancy, a dopant, a topological
feature, a defect, or a functionalized group, the read module may
read the readable data on the planar surface of the platter by
detecting the at least two states. A movement assembly may be
configured to rotate at least one of the read module and the
platter assembly with respect to the other. In other embodiments,
the platter assembly may be a tape configured to move relative to
the read module.
[0049] The read module may also include an actuator assembly
configured to pivot the read module within a parallel plane
substantially planar to at least a portion of the planar surface of
the platter. The graphene film may comprise an array of readable
regions (e.g., vacancy regions) each of which defines 2 or more
possible states. The regions may be arranged in a pre-defined
geometrical array (e.g., a grid pattern) or may be irregularly
located (e.g., with locations stored in a data file). Each region
may contain (or not contain) a single defect, vacancy, dopant,
topographical feature, or functional group. Alternatively, each
region may contain multiple defects, vacancies, dopants,
topological features, or functional groups, characterized by their
number and locations (relative to each other or to the edges or
center of the region), as well as their type.
[0050] In various embodiments, a write module may be configured to
write at least one of the states in an N state data storage system.
For example, a write module may be configured to add and/or remove
dopants, vacancies, topological features, lattice defects, and/or
functional groups. A movement assembly may be adapted to move the
write module and the platter assembly relative to one another. The
write module can create defects and associated topological features
by local irradiation (ion, electron, plasmon) to remove carbon or
pre-existing dopants from the lattice. Dopants can be added
directly via a bombarding ion or indirectly via interaction of a
dopant source with a (pre-existing or newly created) vacancy or
locally heated region.
[0051] Electron-based defect creation is described in Alex W.
Robertson et al., Spatial control of defect creation in graphene at
the nanoscale, Nature Comm. 3:1144 (2012), which is hereby
incorporated by reference in its entirety. Ion-based defect
creation is described in Jian-Hao Chen et al., Defect scattering in
graphene, Physical Rev. Letters 236805 (2009), which is hereby
incorporated by reference in its entirety. Laser defect creation
(which can be further confined via its plasmonic analog) is
described in Thilanka Galwaduge et al., Laser Induced Structural
Modification of Single Layer and Bilayer Graphene, American
Physical Society March Meeting 2010, abstract #P22.00008 (Mar. 17,
2010), available at
http://www.physics.drexel.edu/.about.lowtemp/graphene_laser_induced_defec-
ts.pdf, which is hereby incorporated by reference in its
entirety.
[0052] Functional groups can be added or removed by, for example,
techniques described in Vasilios Georgakilas et al.,
Functionalization of Graphene: Covalent and Non-Covalent
Approaches, Derivatives and Applications, Chemical Reviews 112,
6156 (2012); and Tapas Kuila et al., Chemical Functionalization of
Graphene and its Applications, Progress in Materials Science 57,
1061-1105 (2012), each of which is hereby incorporated by reference
in its entirety. Sequential approaches may also be useful, such as
defect creation by rapid removal of functional groups as described
in Rahul Mukherjee et al., Photothermally Reduced Graphene as
High-Power Anodes for Lithium-Ion Batteries, ACS Nano 6, 7867
(2012), hereby incorporated by reference in its entirety.
[0053] In some embodiments, the write module may or may not have
erase/reset capabilities. Depending on the functionalities and
granularity of the write module, various techniques used for solid
state memory devices, such as erase blocks larger than individual
sectors, may be utilized to allow relatively larger regions of the
graphene film to be erased (i.e., remove all vacancies, remove
dopants, remove functionalized groups, and/or re-functionalize the
entire region). In some embodiments a block of data may be
virtually erased by removing its location from a data file listing
locations of stored data, or by adding its location to a data file
listing unused locations.
[0054] In some embodiments, the monolayer atomic film may conform
substantially to the topography of the underlying substantially
planar surface of the platter. Accordingly, topographical features
representing states for data storage may be defined with respect to
the conformal topography of the graphene film on the substantially
planar surface of the platter. As described above, topographical
features, such as hills and valleys, may be used to store readable
data.
[0055] For instance, a hill or a valley may be used to represent 1s
and 0s. Alternatively, in a multi-state data representation system,
a valley may represent a 0, the lack of a topographical feature may
represent a 1, and a hill may represent a 2. In some embodiments,
the width, depth, height, length, orientation, shape, and/or other
characteristics of the topographical features may be used to
represent any number of states in a multi-state data representation
system.
[0056] Using topographical features to represent states, the
monolayer atomic film may include any number of layers of, for
example, graphene, hexagonal boron nitride, and/or silicene. Other
atomic films having defined lattice structures may be utilized as
well. For example, atomic films having rectangular, pentagonal,
hexagonal, heptagonal, octagonal, etc. shape may be utilized and/or
adapted for use with one or more of the presently described
embodiments. For example, atomic films may use few-layer thick
crystals such as molybdenum disulphide, tungsten diselenide, or
other metal dichalcogenides rather than monolayers such as
graphene, hexagonal boron nitride, or silicine.
[0057] In some embodiments, the monolayer atomic film may comprise
graphene and the readable data may be stored using N possible
states with topographical features representing each of the N
possible states based on size, shape, or orientation. In some
embodiments the topographical feature may comprise an absence or
addition of one or more carbon atoms from a nominal hexagonal
lattice position, one or more adjacent non-hexagonal carbon rings,
one or more dopants in the lattice structure of the graphene, a
functional group, and/or a lattice defect, such as one or more
Stone-Walls defects.
[0058] For example, the topographical feature may be defined by a
single dopant in the graphene film or a doped region of the
graphene film. Similarly, a single vacancy, lattice defect, and/or
functional group in the lattice structure may represent a state or
a region of multiple vacancies, lattice defects, and/or functional
groups. In some embodiments the graphene film may be functionalized
graphene. In such embodiments, the removal or replacement of a
functional group from the functionalized graphene may be used to
represent a state in an N state data representation system.
[0059] As provided above, data may be stored in an N state data
representation system using dopants, topological features,
functional groups, defects, vacancies, and/or other differentiable
characteristics. In some embodiments, a state may be represented
using a single dopant, single topological feature, single
functional group, single defect, single vacancy, and/or single
other differentiable characteristic. In other embodiments, a state
may be represented using a doped region, region of functional
groups, region of defects, region of topological features, region
of multiple vacancies, and/or region of other differentiable
characteristics. In some embodiments, a read module may directly
detect a single (or region of) dopant, functional group, defect,
vacancy, and/or other differentiable characteristic to read the
readable data. In other embodiments, a read module may read a
topographical anomaly, such as a hill/protrusion or
valley/depression, caused by a single (or region of) dopant,
functional group, defect, vacancy, and/or other differentiable.
[0060] Functional groups may comprise organic compounds,
nanoparticles, and/or linker molecules. A state, for example, may
be defined by a plurality of proximate functional groups, a type of
the functional groups, a spatial pattern of functional groups, the
replacement of a functional group with another type of functional
group, and/or a predefined mixture of different functional groups.
In some embodiments, a tracking module may track the movement of a
functional group or vacancy from a first physical location in the
lattice structure to a second physical location in the lattice
structure.
[0061] Throughout this disclosure the terms "in" and "on" are used
interchangeably in many instances. Thus, unless infeasible or
nonsensical, the terms "in" and "on" should each be understood as
"in and/or on." For example, "a defect in a lattice structure" may
include both a "dopant in a lattice structure" and a "dopant on a
lattice structure."
[0062] Many existing computing devices and infrastructures may be
used in combination with the presently described atomic film data
storage concepts described herein. Some of the infrastructure that
can be used with embodiments disclosed herein is already available,
such as general-purpose computers, computer programming tools and
techniques, digital storage media, and communication links. A
computing device may include a processor such as a microprocessor,
a microcontroller, logic circuitry, or the like. A processor may
include a special purpose processing device such as
application-specific integrated circuits (ASIC), programmable array
logic (PAL), programmable logic array (PLA), programmable logic
device (PLD), field programmable gate array (FPGA), or other
customizable and/or programmable device. The computing device may
also include a machine-readable storage device such as non-volatile
memory, static RAM, dynamic RAM, ROM, CD-ROM, disk, tape, magnetic,
optical, flash memory, or other machine-readable storage medium.
Various aspects of certain embodiments may be implemented using
hardware, software, firmware, or a combination thereof.
[0063] The embodiments of the disclosure will be best understood by
reference to the drawings, wherein like parts are designated by
like numerals throughout. The components of the disclosed
embodiments, as generally described and illustrated in the figures
herein, could be arranged and designed in a wide variety of
different configurations. Furthermore, the features, structures,
and operations associated with one embodiment may be applicable to
or combined with the features, structures, or operations described
in conjunction with another embodiment. In other instances,
well-known structures, materials, or operations are not shown or
described in detail to avoid obscuring aspects of this
disclosure.
[0064] Thus, the following detailed description of the embodiments
of the systems and methods of the disclosure is not intended to
limit the scope of the disclosure, as claimed, but is merely
representative of possible embodiments. In addition, the steps of a
method do not necessarily need to be executed in any specific
order, or even sequentially, nor do the steps need to be executed
only once.
[0065] FIG. 1A illustrates a substantially planar surface of a
platter 100 with a monolayer atomic film having a hexagonal lattice
structure. The platter 100 may comprise carbon, silicon crystal,
metal, and/or plastic. As illustrated, the platter 100 may be
shaped like a disk and may, or may not, have a hole 105 in the
center. According to various embodiments, the platter 100 may have
multiple layers of monolayer atomic films. In the illustrated
embodiment, the monolayer atomic film has a hexagonal lattice
structure. In alternative embodiments, the monolayer atomic film
may have any n-polygonal lattice structure and may include any
number of layers. In some embodiments, each layer may be used to
store data. Multiple layers may be separated by spacers. In some
embodiments, the underside of the platter 100 may also have a
monolayer atomic film configured to store data as well.
[0066] FIG. 1B illustrates a close-up view 110 of the hexagonal
lattice structure of the monolayer atomic film on the platter 100
of FIG. 1A. As an example, graphene may be positioned (e.g.,
deposited, placed, or adhered) on the platter 100. The graphene may
form hexagonal bonds between the various carbon atoms. As described
above, anomalies in the lattice structure may be used to represent
one or more states in an N state data representation model.
[0067] FIG. 2A illustrates a graphene film 200 including two layers
of a graphene 210 and 220. As illustrated, each layer of graphene
210 and 220 may be in the form of a hexagonal lattice structure.
Each node in the illustration may represent a carbon atom and each
solid line may represent a bond. In the illustrated embodiment, the
dashed lines illustrate the alignment of the first layer 210 with
respect to the second layer 220. Data may be stored in the bottom
layer 220 and/or the top layer 210.
[0068] FIG. 2B illustrates an atomic film 200 including two layers
210 and 220 that are offset with respect to one another. As
illustrated the bottom layer 220 may include different types of
atoms and/or molecules 240 and 230 that form the hexagonal lattice
structure. The top layer 210 may be graphene, hexagonal boron
nitride, silicene, or some other atomic film. The top layer 210 be
bonded, adhered, and/or otherwise permanently or semi-permanently
positioned on the bottom layer 220. Any of a wide variety of
bonding may be utilized. For example, bonding may include Van der
Wall bonds, covalent bonds, ionic bonds, and/or the like. Data may
be stored in the bottom layer 220 and/or the top layer 210.
[0069] FIGS. 3A-3E illustrate various embodiments 310, 320, 330,
340, and 350 of hexagonal monolayer atomic films. In the
illustrated embodiments, each of the nodes of a particular shading
illustrates a unique type of atom or molecule. For example, nodes
shaded black may represent carbon atoms, nodes shaded dark grey may
represent nitrogen, and nodes shaded light grey may represent
boron. Accordingly, FIGS. 3A-3E show that various configurations
and varieties of lattice structures are possible in conjunction
with the various embodiments described herein. The illustrated
embodiments show hexagonal lattice structures. However, the systems
and methods of using anomalies in lattice structures to represent
data, as described herein, may be adapted for use on any lattice
structure having a normal N-polygonal configuration, where N is an
integer greater than 2.
[0070] FIG. 4A illustrates a read assembly 400 configured to read
data encoded on an atomic film 410 on a platter 420. The read
assembly may include a read head 457, an arm 455, and an actuator
450. The actuator 450 may be configured to pivot the arm 455 and
the read head 457 with respect to the platter 420. The platter 420
may be configured to rotate. The rotation of the platter 420 in
conjunction with the pivoting actuator 450 may allow all areas of
the atomic film 410 to be accessed by the read head 457. The read
head 457 may be configured to detect anomalies in the lattice
structure of the atomic film 410. For example, the read head 457
may be configured to detect vacancies, dopants, functional groups,
lattice defects, the lack of functional groups, and/or other
anomalies.
[0071] In some embodiments, the read head 457 may be configured to
detect topographical features, such as hills or valleys, that may
be caused by anomalies in the lattice structure. In one embodiment,
the read assembly 400 may comprise elements of an atomic force
microscope, such as the actuator 450, the arm 455, or the read head
457. In some embodiments, the read head 457 may detect defects in
the lattice structure via physical contact, or via changes in the
atomic film's electronic, plasmonic, optical, or vibrational
properties.
[0072] Electronic signatures of various graphene defects are
described in I. Deretzis, Electronic transport signatures of common
defects in irradiated graphene-based systems, Nuclear Instruments
& Methods in Physics Res. B 282, 108 (2012), hereby
incorporated by reference in its entirety. Electronic and
vibrational signatures of Stone-Wales defects are described in
Sharmila N. Shirodkar & Umesh V. Waghmare, Electronic and
vibrational signatures of Stone-Wales defects in graphene:
First-principles analysis, Physical Rev. B 165401 (2012), hereby
incorporated by reference in its entirety. High resolution Raman
detection of defects is described in Johannes Stadler et al.,
Nanoscale Chemical Imaging of Single-Layer Graphene, ACS Nano 5,
8442 (2011), hereby incorporated by reference.
[0073] Small-tip electron microscopy methods such as annular
dark-field imaging may be used to provide single-atom level
detection and characterization of graphene defects, such as the
methods described in Wu Zhou et al., Probing graphene defect
structures and optical properties at the single atom level, 15th
European Microscopy Congress (Sep. 17, 2012), available at
http://www.emc2012.org.uk//documents/Abstracts/Abstracts/EMC2012_0370.pdf-
, hereby incorporated by reference in its entirety.
[0074] Topological defects can be detected and characterized either
directly via their topological height differences from the
underlying monolayer or indirectly via their effect on electronic
properties, as described in Alberto Cortijo & Maria A. H.
Vozmediano, Effects of topological defects and local curvature on
the electronic properties of planar graphene, Nuclear Physics B
763, 293 (2007), hereby incorporated by reference in its entirety,
and in Jannik C. Meyer et al., Direct Imaging of Lattice Atoms and
Topological Defects in Graphene Membranes, Nano Letters 8, 3582
(2008), hereby incorporated by reference in its entirety. The
detection and characterization of functional groups can be
performed directly via chemical probes, near-field spectroscopy or
the like, or indirectly via their effect on the electronic or
optical properties of the graphene.
[0075] FIG. 4B illustrates an alternative embodiment of a read
assembly 475 and a platter 420 with an atomic film 410 thereon. As
illustrated and previously described, the atomic film 410 may be a
monolayer atomic film with a hexagonal lattice structure, such as
graphene or boron nitride. Data may be stored as anomalies in the
lattice structure that represent one or more states in an N state
data representation system. For example, different types of
anomalies and/or the lack of an anomaly may represent a state in a
binary or ternary data representation system.
[0076] The read module 475 may include a read head 485 that slides
along rails 487 between a center post 483 and an outside post 480.
The platter 420 may rotate about the axis defined by the center
post 483 to allow the read head 485 to access each portion of the
atomic film 410. The platter 420 and/or the read assembly 475 may
be configured to rotate with respect to the other. The read head
485 may be configured to detect anomalies in the lattice structure
of the atomic film 410.
[0077] As above, the read head 485 may be configured to detect
topographical features, such as hills or valleys, that may be
caused by anomalies in the lattice structure and/or directly detect
anomalies in the lattice structure. The format, shape, size, etc.
of the platter may be different than illustrated. For example, the
platter may be in the form of a tape configured to flexibly wind
and unwind past a read head.
[0078] FIG. 5 illustrates a plurality of disjointed patches 515,
517, 518, and 519 of a monolayer atomic film 510 on a planar
surface of a platter 520 of a data storage medium 500. The
monolayer atomic film 510 may be deposited on one or more of the
planar surfaces of the platter 520 as a single continuous film. In
other embodiments, the monolayer atomic film 510 may be deposited
as a plurality of discontinuous or continuous patches 515, 517,
518, and 519 of an atomic film. The discontinuous patches 515, 517,
518, and 519 may be physically joined along a grain boundary or an
irregular lattice boundary.
[0079] The plurality of patches 515, 517, 518, and 519 may be
physically separated by a gap (as illustrated) or overlap one
another. In various embodiments, the patches 515, 517, 518, and 519
may be between one square micron and 100 square millimeters. The
patches 515, 517, 518, and 519 may be mapped to facilitate reading
the data stored on, for example, a graphene film 510. For instance,
each of the plurality of patches 515, 517, 518, and 519 may be
mapped based on their location on the platter 520, their location
relative to another patch, an orientation on the platter 520,
and/or a thickness of a film 510.
[0080] FIG. 6A illustrates a portion of a platter with a monolayer
atomic film 610 on the surface with dopants 621 used to represent
one or more possible states in a multi-state data representation
model. The data storage medium 600 may be any size or shape, such
as the illustrated disk or a tape format. In some embodiments, each
dopant 620 may represent one of two states in a binary data
representation model. In another embodiment, each dopant 621 may
represent one of three states in a ternary data representation
model. In still other embodiments, each dopant 621 may represent
one of N states in an N state data representation model.
[0081] As described herein, a read module may be configured to
directly detect dopants 621 and a lack of dopants 621 as, for
example, 0s and 1s, in a binary data representation model. In other
embodiments, a read module may be configured to detect
topographical features caused by the dopants as a first state
(e.g., a 1 or a 0) and the lack of a topographical feature as a
second state (e.g., a 1 or a 0). In other embodiments, a read
module may be configured to detect a first type of topographical
feature caused by one or more dopants as a first state and a second
type of topographical feature as a second state.
[0082] FIG. 6B illustrates a portion of a platter 620 with a
monolayer atomic film 610 on the surface with functional groups 625
used to represent one or more possible states. Similar to the
embodiments described above in conjunction with FIG. 6A, functional
groups 625 may be used to represent one or more possible states in
an N state data representation module. As described herein, a read
module may be configured to directly detect functional groups 625
and a lack of functional groups 625 as, for example, 0s and 1s, in
a binary data representation model. In other embodiments, a read
module may be configured to detect topographical features caused by
the functional groups as a first state (e.g., a 1 or a 0) and the
lack of a topographical feature as a second state (e.g., a 1 or a
0). In other embodiments, a read module may be configured to detect
a first type of topographical feature caused by one or more
functional groups as a first state and a second type of
topographical feature caused by one or more functional groups as a
second state.
[0083] FIG. 7A illustrates an atomic film 700 with a 5-7-7-5
lattice defect used to represent one or more possible states. As
described herein, data may be stored using an N state data
representation model in which one or more states are represented
using lattice defects, such as 5-7-7-5 lattice defects. In various
embodiments, a read module may be configured to directly detect a
lattice defect. In other embodiments, a read module may be
configured to detect topographical features caused by the lattice
defects, such as hills/protrusions and/or valleys/depressions. In
some embodiments, various types of lattice defects, such as 5-7-7-5
lattice defects and 5-8-5 lattice defects, may be used to represent
states in a ternary or higher level data representation model.
[0084] FIG. 7B illustrates another example of a lattice defect in
an atomic film 710 that may be used to represent one or more states
in a multi-state data storage model. As described above, any of a
wide variety of lattice defects, in hexagonal lattice structures or
other N-polygonal lattice structures, may be used to directly
represent one or more states in a base N (e.g., binary, ternary,
etc.) data representation model. In some embodiments, any of a wide
variety of lattice defects, including the illustrated lattice
defect, may be used to create distinguishable topographical
features for storing data.
[0085] FIG. 7C illustrates a topographical feature (a protrusion)
750 used to represent one or more possible states in a monolayer
atomic film 710, such as graphene or hexagonal boron nitride. In
the illustrated embodiment, a lattice defect 715, such as a 5-7-7-5
lattice defect, may cause the topographical feature 750.
[0086] FIG. 8 illustrates another example of a lattice defect in a
monolayer atomic film 800. Specifically, FIG. 8 illustrates a 5-8-5
lattice defect in a monolayer atomic film 800. As described above,
any of a wide variety of lattice defects, in hexagonal lattice
structures or other N-polygonal lattice structures, may be used to
directly represent one or more states in a base N (e.g., binary,
ternary, etc.) data representation model. In some embodiments, any
of a wide variety of lattice defects, including the illustrated
lattice defect, may be used to create distinguishable topographical
features for storing data.
[0087] FIG. 9 illustrates a region of a graphene lattice 900 with a
topographical depression caused by one or more vacancies in the
lattice structure and/or dopants in the lattice structure. As
described herein, one or more topographical features may be used to
represent one or more states in a binary, ternary, or base N data
representation model on a normally uniform lattice structure.
[0088] In some embodiments, the atomic film may be positioned on a
platter. The atomic film may conform substantially to the
topography of the underlying substantially planar surface of the
platter. Accordingly, topographical features representing states
for data storage may be defined with respect to the conformal
topography of the graphene film on the substantially planar surface
of the platter. Accordingly, the conformal topography of the
graphene film on the platter (i.e., without data) may be mapped to
enable a detection of topographical feature defined with respect to
the conformal topography of the graphene film on the platter. As
described above, topographical features, such as hills and valleys,
may be used to store readable data.
[0089] FIG. 10A illustrates vacancies 1010 and 1011 in a lattice
structure 1000 that may be used to represent one or more possible
data states. As described above, vacancies and/or lattice defects
may be used to directly or indirectly (via topographical features)
represent one or more states in a base N (e.g., binary, ternary,
etc.) data representation model.
[0090] FIG. 10B illustrates another example of a vacancy 1020 in a
lattice structure 1050 that may be used alone or in conjunction
with other vacancies to represent one or more possible states in a
data representation model. In some embodiments, multiple vacancies
(or functional groups, dopants, etc.) may be used to represent a
single bit or singular data unit in a data representation
model.
[0091] FIG. 11 illustrates a plurality of vacancies 1110, 1120,
1130, 1140, and 1150 in a region of a graphene lattice structure
1100 that may be used to individually represent bits in an N base
data representation model or collectively represent bits in an N
base data representation model. For example, each vacancy 1110,
1120, 1130, 1140, and 1150 may represent a bit in a binary data
representation model. As another example, two vacancy regions 1130
and 1140 within a predetermined region may represent a 1, while a
vacancy region 1110 alone may represent a 0. In such an embodiment,
various predetermined arrangements/configurations of vacancies (or
dopants, topographical features, functional groups, and/or lack of
functional groups in a fully functional graphene lattice) may be
used to represent bits in any base data representation system.
[0092] For example, a first arrangement may represent a 1 in a
binary data representation system and a second arrangement may
represent a 0 in the binary data representation system. As another
example, in a quaternary data representation model, a first
arrangement may represent a 0, a second configuration may represent
a 1, a third configuration may represent a 2, and a final
arrangement may represent a 3.
[0093] FIG. 12 illustrates a plurality of functional groups 1225 on
a monolayer atomic film 1210 used to represent a state in a
multi-state data storage device 1200. As described above, a
singular functional group and/or a collection of functional groups
may represent a bit in a multi-state data representation model. In
some embodiments, each type of functional group may be used to
represent a unique state in a multi-state data representation
model. In some embodiments, arrangements/configurations of
functional groups of one or more types may be used to represent
unique states in a multi-state data representation model. For
instance, unique types and/or arrangements/configurations of
functional groups (or vacancies, dopants, or topographical
features) may be used to represent 0s and 1s in a binary data
representation system.
[0094] FIG. 13A illustrates a fully functionalized graphene film
1310 on a platter 1300. As illustrated, functional groups 1325 may
fully functionalized the graphene film 1310.
[0095] FIG. 13B illustrates an alternative embodiment of a fully
functionalized graphene film 1355 on a platter 1350. Functional
groups 1365 may be removed from the fully functionalized graphene
film 1355. The removed functional groups may be used to represent
one or more possible states in a data representation model.
[0096] This disclosure has been made with reference to various
exemplary embodiments, including the best mode. However, those
skilled in the art will recognize that changes and modifications
may be made to the exemplary embodiments without departing from the
scope of the present disclosure. While the principles of this
disclosure have been shown in various embodiments, many
modifications of structure, arrangements, proportions, elements,
materials, and components may be adapted for a specific environment
and/or operating requirements without departing from the principles
and scope of this disclosure. These and other changes or
modifications are intended to be included within the scope of the
present disclosure.
[0097] The foregoing specification has been described with
reference to various embodiments. However, one of ordinary skill in
the art will appreciate that various modifications and changes can
be made without departing from the scope of the present disclosure.
Accordingly, this disclosure is to be regarded in an illustrative
rather than a restrictive sense, and all such modifications are
intended to be included within the scope thereof. Likewise,
benefits, other advantages, and solutions to problems have been
described above with regard to various embodiments. However,
benefits, advantages, solutions to problems, and any element(s)
that may cause any benefit, advantage, or solution to occur or
become more pronounced are not to be construed as a critical, a
required, or an essential feature or element. The scope of the
present invention should, therefore, be determined by the following
claims.
* * * * *
References