U.S. patent application number 15/472203 was filed with the patent office on 2018-02-01 for light emitting diode assembly structure.
The applicant listed for this patent is HARVATEK CORPORATION. Invention is credited to CHIH-WEI CHANG, SHYI-MING PAN, ZHI-TING YE.
Application Number | 20180033928 15/472203 |
Document ID | / |
Family ID | 61010147 |
Filed Date | 2018-02-01 |
United States Patent
Application |
20180033928 |
Kind Code |
A1 |
CHANG; CHIH-WEI ; et
al. |
February 1, 2018 |
LIGHT EMITTING DIODE ASSEMBLY STRUCTURE
Abstract
A light emitting diode assembly structure includes a light
emitting chip, a color converting layer, a light guiding member,
and a reflecting member. The color converting layer coats the light
emitting chip and the light guiding member coats the color
converting layer. The planar or non-planar reflecting member is
arranged over the light guiding member. The reflecting member is
faced towards the light emitting chip and changes the range of
illumination of the light emitted by the light emitting chip. The
reflecting member can be arranged on a side of the color converting
layer and light can be irradiated towards the exterior of the light
emitting diode assembly structure.
Inventors: |
CHANG; CHIH-WEI; (Hsinchu,
TW) ; YE; ZHI-TING; (Hsinchu, TW) ; PAN;
SHYI-MING; (Hsinchu, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
HARVATEK CORPORATION |
Hsinchu |
|
TW |
|
|
Family ID: |
61010147 |
Appl. No.: |
15/472203 |
Filed: |
March 28, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 33/58 20130101;
H01L 33/56 20130101; H01L 33/54 20130101; H01L 2933/0058 20130101;
H01L 2933/0091 20130101; H01L 33/505 20130101; H01L 33/60
20130101 |
International
Class: |
H01L 33/60 20060101
H01L033/60; H01L 33/50 20060101 H01L033/50; H01L 33/56 20060101
H01L033/56; H01L 33/54 20060101 H01L033/54 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 26, 2016 |
TW |
105211295 |
Claims
1. A light emitting diode assembly structure comprising: a light
emitting chip; a color converting layer, coated on the light
emitting chip; a light guiding member, arranged over the color
converting layer; and a reflecting member, arranged over the light
guiding member, wherein the reflecting member comprises a first
reflecting surface faced towards the light emitting chip, and
wherein the first reflecting surface is a surface selected from the
group consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof.
2. The light emitting diode assembly structure of claim 1, wherein
the light guiding member is coated on the color converting
layer.
3. The light emitting diode assembly structure of claim 1, wherein
the light guiding member is arranged on a top surface of the color
converting layer.
4. The light emitting diode assembly structure of claim 1, wherein
the light emitting chip is a chip selected from the group
consisting of a horizontal type light emitting diode chip, a
vertical type light emitting diode chip, a flip chip type light
emitting diode chip, and a combination thereof.
5. The light emitting diode assembly structure of claim 1, wherein
the light emitting diode assembly structure further comprises a
substrate arranged on a bottom surface of the light emitting
chip.
6. The light emitting diode assembly structure of claim 5, wherein
the substrate comprises a second reflecting surface faced towards
the first reflecting surface of the reflecting member.
7. The light emitting diode assembly structure of claim 1, wherein
the light guiding member comprises silicon and additional material,
wherein the weight of the additional material is within a range of
about 5% to about 15% of the weight of the silicon, and wherein the
additional material is selected from the group consisting of
organic diffusion particles, inorganic diffusion particles, and a
combination thereof.
8. The light emitting diode assembly structure of claim 7, wherein
a refractive index of the silicon is substantially in a range of
1.4 to 1.6, and wherein a refractive index of the additional
material is substantially in a range of 1.5 to 1.8.
9. The light emitting diode assembly structure of claim 7, wherein
the organic diffusion particles comprise an organic silicone
compound or an acrylic compound, and wherein the inorganic
diffusion particles comprise silica or a calcium carbonate
compound.
10. A light emitting diode assembly structure comprising: a light
emitting chip; a light guiding member, arranged over the light
emitting chip; a color converting layer, arranged over the light
guiding member; and a reflecting member, arranged over the color
converting layer, wherein the reflecting member comprises a first
reflecting surface faced towards the light emitting chip, and
wherein the first reflecting surface is a surface selected from the
group consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof.
11. The light emitting diode assembly structure of claim 10,
wherein the light guiding member is coated on the light emitting
chip, and the color converting layer is coated on the light guiding
member.
12. The light emitting diode assembly structure of claim 10,
wherein the light guiding member is arranged on the light emitting
chip, and the light guiding member and the light emitting chip are
coated by the color converting layer.
13. The light emitting diode assembly structure of claim 10,
wherein the light emitting chip is a chip selected from the group
consisting of a horizontal type light emitting diode chip, a
vertical type light emitting diode chip, a flip chip type light
emitting diode chip, and a combination thereof.
14. The light emitting diode assembly structure of claim 10,
wherein the light emitting diode assembly structure further
comprises a substrate arranged on a bottom surface of the light
emitting chip.
15. The light emitting diode assembly structure of claim 14,
wherein the substrate comprises a second reflecting surface faced
towards the second reflecting surface of the reflecting member.
16. The light emitting diode assembly structure of claim 10,
wherein the light guiding member comprises silicon and additional
material, wherein the weight of the additional material is within a
range of about 5% to about 15% of the weight of the silicon, and
wherein the additional material is selected from the group
consisting of organic diffusion particles, inorganic diffusion
particles, and a combination thereof.
17. The light emitting diode assembly structure of claim 16,
wherein a refractive index of the silicon is substantially in a
range of 1.4 to 1.6, and wherein a refractive index of the
additional material is substantially in a range of 1.5 to 1.8.
18. The light emitting diode assembly structure of claim 16,
wherein the organic diffusion particles comprise an organic
silicone compound or an acrylic compound, and wherein the inorganic
diffusion particles comprise silica or a calcium carbonate
compound.
19. A light emitting diode assembly structure comprising: a light
emitting chip; a color converting layer, coated on the light
emitting chip; a reflecting member, arranged around a side of the
color converting layer; and a light guiding member, coated on a
periphery of the color converting layer and the reflecting member,
wherein an inner surface of the reflecting member comprises a
reflecting surface faced towards the light emitting chip, and
wherein the reflecting surface is symmetric or asymmetric.
20. The light emitting diode assembly structure of claim 19,
wherein the reflecting surface is a surface selected from the group
consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof.
21. The light emitting diode assembly structure of claim 19,
wherein a top end of the light guiding member comprises a light
exiting surface, the light exiting surface is a continuous or
discontinuous structure, wherein the light exiting surface are
substantially planar, arc-shaped, n-shaped or v-shaped.
22. The light emitting diode assembly structure of claim 19,
wherein a width of the cross-section of the reflecting member
increases gradually in a direction away from the light emitting
chip.
23. The light emitting diode assembly structure of claim 19,
wherein the reflecting surface is a sealed and continuous
surface.
24. The light emitting diode assembly structure of claim 19,
wherein the reflecting member is substantially a frustum.
25. The light emitting diode assembly structure of claim 19,
wherein the light guiding member comprises silicon and additional
material, wherein the weight of the additional material is within a
range of about 5% to about 15% of the weight of the silicon, and
wherein the additional material is selected from the group
consisting of organic diffusion particles, inorganic diffusion
particles, and a combination thereof.
26. The light emitting diode assembly structure of claim 25,
wherein a refractive index of the silicon is substantially in a
range of 1.4 to 1.6, and wherein a refractive index of the
additional material is substantially in a range of 1.5 to 1.8.
27. The light emitting diode assembly structure of claim 25,
wherein the organic diffusion particles comprise an organic
silicone compound or an acrylic compound, and wherein the inorganic
diffusion particles comprise silica or a calcium carbonate
compound.
28. A light emitting diode assembly structure comprising: a light
emitting chip; a color converting layer, coated on the light
emitting chip; a light guiding member, arranged over the light
emitting chip; and a reflecting member, arranged over the light
guiding member, wherein the reflecting member comprises a first
reflecting surface faced towards the light emitting chip, and
wherein the first reflecting surface is a surface selected from the
group consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof, and
wherein the reflecting member comprises a top surface and a bottom
surface, and wherein the reflecting member arranges a groove, the
groove penetrates the top and bottom surfaces of the reflecting
member.
29. The light emitting diode assembly structure of claim 28,
wherein the groove is substantially symmetrical under all rotations
about its center.
30. The light emitting diode assembly structure of claim 28,
wherein the groove is a cross groove or a circular groove.
31. The light emitting diode assembly structure of claim 28,
wherein a width of the groove is in a range from substantially 0.05
mm to substantially 0.3 mm.
32. The light emitting diode assembly structure of claim 28,
wherein the groove comprises an upper end portion opposite to the
light guiding member and a lower end portion adjacent to the light
guiding member, and wherein a width of the upper end portion is
more than or equal to a width of the lower end portion.
33. The light emitting diode assembly structure of claim 28,
wherein the light guiding member comprises silicon and additional
material, wherein the weight of the additional material is within a
range of about 5% to about 15% of the weight of the silicon, and
wherein the additional material is selected from the group
consisting of organic diffusion particles, inorganic diffusion
particles, and a combination thereof.
34. The light emitting diode assembly structure of claim 33,
wherein a refractive index of the silicon is substantially in a
range of 1.4 to 1.6, and wherein a refractive index of the
additional material is substantially in a range of 1.5 to 1.8.
35. The light emitting diode assembly structure of claim 33,
wherein the organic diffusion particles comprise an organic
silicone compound or an acrylic compound, and wherein the inorganic
diffusion particles comprise silica or a calcium carbonate
compound.
36. A light emitting diode assembly structure comprising: a light
emitting chip; a color converting layer, coated on the light
emitting chip; a light guiding member, arranged over the light
emitting chip; and a reflecting member, arranged over the light
guiding member, wherein the reflecting member comprises a first
reflecting surface faced towards the light emitting chip, and
wherein the first reflecting surface is a surface selected from the
group consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof,
wherein the reflecting member comprises a first top surface and a
first bottom surface, the light guiding member comprises a second
top surface and a second bottom surface, and wherein the light
emitting diode assembly structure arranges a groove, the groove
penetrates from the first top surface of the reflecting member to a
predetermined position between the second top surface of the light
guiding member and the second bottom surface of the light guiding
member.
37. The light emitting diode assembly structure of claim 36,
wherein the groove is substantially symmetrical under all rotations
about its center.
38. The light emitting diode assembly structure of claim 36,
wherein the groove is a cross-shaped groove or a circular
groove.
39. The light emitting diode assembly structure of claim 36,
wherein a width of the groove is in a range from substantially 0.05
mm to substantially 0.3 mm.
40. The light emitting diode assembly structure of claim 36,
wherein the groove comprises an upper end portion opposite to the
color converting layer and a lower end portion adjacent to the
color converting layer, and wherein a width of the upper end
portion is more than or equal to a width of the lower end
portion.
41. The light emitting diode assembly structure of claim 36,
wherein the light guiding member comprises silicon and additional
material, wherein the weight of the additional material is within a
range of about 5% to about 15% of the weight of the silicon, and
wherein the additional material is selected from the group
consisting of organic diffusion particles, inorganic diffusion
particles, and a combination thereof.
42. The light emitting diode assembly structure of claim 41,
wherein a refractive index of the silicon is substantially in a
range of 1.4 to 1.6, and wherein a refractive index of the
additional material is substantially in a range of 1.5 to 1.8.
43. The light emitting diode assembly structure of claim 41,
wherein the organic diffusion particles comprise an organic
silicone compound or an acrylic compound, and wherein the inorganic
diffusion particles comprise silica or a calcium carbonate
compound.
Description
FIELD
[0001] The subject matter herein generally relates to light
emitting diode assembly structures.
BACKGROUND OF THE INVENTION
[0002] Light emitting diode products can be seen everywhere, such
as traffic signals, automobile lamps, street lamps, lights or
flashlights. These light emitting diode products need to process
the light emitting chip, and the light emitting chip needs to be
packaged with a light emitting diode assembly structure.
[0003] The light emitting diode assembly structure improves the
power supply to the light emitting chip and improves light
radiation efficiency of the light emitting chip. When the light
emitting chip is exposed to an atmosphere for a long time, there
may be deteriorated due to an influence of chemicals in the
atmosphere or other environment, thereby causing the light emitting
chip accelerated deterioration. At present, the light emitting chip
may be coated with a high-transparency epoxy resin, which
effectively seals out the atmosphere. A suitable packaging
substrate can provide better protection for the light emitting
diode assembly structure, and a life of the light emitting chip may
be improved. However, using the high transparency epoxy resin
limits light emission from the light emitting chip and the light
extracting efficiency is low.
[0004] Optical design is also an important part of the packaging
process. At present, a secondary optical lens may be arranged on
the light emitting diode, which can change the light emitting
angles. However, the secondary optical lens is not easy to
assemble, and increases cost.
[0005] The following detailed descriptions of exemplary embodiments
are to be considered in combination with the accompanying figures.
As will be realized, the subject matter disclosed and claimed is
capable of modifications in various respects, all without departing
from the scope of the claims. Accordingly, the drawings and the
description are to be regarded as illustrative in nature, and not
as restrictive in relation to the full scope of the subject matter
as set forth in the claims.
SUMMARY
[0006] The present disclosure provides a light emitting diode
assembly structure having a light guiding member and a reflecting
member.
[0007] The light emitting diode assembly structure includes a light
emitting chip, a color converting layer, a light guiding member,
and a reflecting member. The color converting layer is coated on
the light emitting chip. The light guiding member is arranged over
the color converting layer. The reflecting member is arranged over
the light guiding member. The reflecting member comprises a first
reflecting surface faced towards the light emitting chip, and
wherein the first reflecting surface is a surface selected from the
group consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof.
[0008] In an alternative exemplary embodiment, the light guiding
member is coated on the color converting layer.
[0009] In an alternative exemplary embodiment, the light guiding
member is arranged on a top surface of the color converting
layer
[0010] In an alternative exemplary embodiment, the light emitting
chip is selected from the group consisting of a horizontal type
light emitting diode chip, a vertical type light emitting diode
chip, a flip chip type light emitting diode chip, and a combination
thereof.
[0011] In an alternative exemplary embodiment, the light emitting
diode assembly structure further includes a substrate arranged on a
bottom surface of the light emitting chip.
[0012] In an alternative exemplary embodiment, the substrate
includes a second reflecting surface faced towards the first
reflecting surface of the reflecting member.
[0013] In an alternative exemplary embodiment, the light guiding
member includes silicon and additional material. The weight of the
additional material is within a range of about 5% to about 15% of
the weight of the silicon. The additional material is selected from
the group consisting of organic diffusion particles, inorganic
diffusion particles, and a combination thereof.
[0014] In an alternative exemplary embodiment, a refractive index
of the silicon is substantially in a range of 1.4 to 1.6. A
refractive index of the additional material is substantially in a
range of 1.5 to 1.8.
[0015] In an alternative exemplary embodiment, the organic
diffusion particles comprise an organic silicone compound or an
acrylic compound. The inorganic diffusion particles comprise silica
or a calcium carbonate compound.
[0016] In an alternative exemplary embodiment, the light emitting
diode assembly structure includes a light emitting chip, a color
converting layer, a light guiding member, and a reflecting member.
The light guiding member is arranged over the color converting
layer. The color converting layer is arranged over the light
guiding member. The reflecting member is arranged over the color
converting layer. The reflecting member comprises a first
reflecting surface faced towards the light emitting chip, and
wherein the first reflecting surface is a surface selected from the
group consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof.
[0017] In an alternative exemplary embodiment, the light guiding
member is coated on the light emitting chip, and the color
converting layer is coated on the light guiding member.
[0018] In an alternative exemplary embodiment, the light guiding
member is arranged on the light emitting chip, and the light
guiding member and the light emitting chip are coated by the color
converting layer.
[0019] In an alternative exemplary embodiment, the reflecting
member comprises a first reflecting surface faced towards the light
emitting chip. The first reflecting surface is selected from the
group consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof.
[0020] In an alternative exemplary embodiment, the light emitting
chip is selected from the group consisting of a horizontal type
light emitting diode chip, a vertical type light emitting diode
chip, a flip chip type light emitting diode chip, and a combination
thereof.
[0021] In an alternative exemplary embodiment, the light emitting
diode assembly structure further comprises a substrate arranged on
a bottom surface of the light emitting chip.
[0022] In an alternative exemplary embodiment, the substrate
comprises a second reflecting surface faced towards the first
reflecting surface of the reflecting member.
[0023] In an alternative exemplary embodiment, the light guiding
member includes silicon and additional material. The weight of the
additional material is within a range of about 5% to about 15% of
the weight of the silicon. The additional material is selected from
the group consisting of organic diffusion particles, inorganic
diffusion particles, and a combination thereof.
[0024] In an alternative exemplary embodiment, a refractive index
of the silicon is substantially in a range of 1.4 to 1.6. A
refractive index of the additional material is substantially in a
range of 1.5 to 1.8.
[0025] In an alternative exemplary embodiment, the organic
diffusion particles comprise an organic silicone compound or an
acrylic compound. The inorganic diffusion particles comprise silica
or a calcium carbonate compound.
[0026] In an alternative exemplary embodiment, the light emitting
diode assembly structure includes a light emitting chip, a color
converting layer, a light guiding member, and a reflecting member.
The color converting layer is coated on the light emitting chip.
The reflecting member is arranged around a side of the color
converting layer. The light guiding member is coated on a periphery
of the color converting layer and the reflecting member. An inner
surface of the reflecting member includes a reflecting surface
faced towards the light emitting chip. The reflecting surface is
symmetrical or asymmetrical under all rotations about its
center.
[0027] In an alternative exemplary embodiment, the reflecting
surface is selected from the group consisting of a planar, a
concave, a convex, a parabolic, a multi-segmented, a curved
surface, and a combination thereof.
[0028] In an alternative exemplary embodiment, the light guiding
member includes a light exiting surface faced towards the light
emitting chip. The light exiting surface is a continuous or
discontinuous structure. The light exiting surface is substantially
planar, arc-shaped, n-shaped, or v-shaped.
[0029] In an alternative exemplary embodiment, a width of the
cross-section of the reflecting member increases gradually in a
direction away from the light emitting chip.
[0030] In an alternative exemplary embodiment, the reflecting
surface is a sealed and continuous surface.
[0031] In an alternative exemplary embodiment, the reflecting
member is a substantially frustum.
[0032] In an alternative exemplary embodiment, the light guiding
member includes silicon and additional material. The weight of the
additional material is within a range of about 5% to about 15% of
the weight of the silicon. The additional material is selected from
the group consisting of organic diffusion particles, inorganic
diffusion particles, and a combination thereof.
[0033] In an alternative exemplary embodiment, a refractive index
of the silicon is substantially in a range of 1.4 to 1.6. A
refractive index of the additional material is substantially in a
range of 1.5 to 1.8.
[0034] In an alternative exemplary embodiment, the organic
diffusion particles comprise an organic silicone compound or an
acrylic compound. The inorganic diffusion particles comprise silica
or a calcium carbonate compound.
[0035] A light emitting diode assembly structure includes a light
emitting chip, a color converting layer coated on the light
emitting chip, a light guiding member arranged over the light
emitting chip, and a reflecting member arranged over the light
guiding member. The reflecting member comprises a first reflecting
surface faced towards the light emitting chip, and wherein the
first reflecting surface is a surface selected from the group
consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof. The
reflecting member comprises a top surface and a bottom surface, and
wherein the reflecting member arranges a groove. The groove
penetrates the top and bottom surfaces of the reflecting
member.
[0036] In an alternative exemplary embodiment, the groove is
substantially symmetrical under all rotations about its center.
[0037] In an alternative exemplary embodiment, the groove is a
cross-shaped groove or a circular groove.
[0038] In an alternative exemplary embodiment, a width of the
groove is in a range from substantially 0.05 mm to substantially
0.3 mm.
[0039] In an alternative exemplary embodiment, the groove comprises
an upper end portion opposite to the light guiding member and a
lower end portion adjacent to the light guiding member, and wherein
a width of the upper end portion is more than or equal to a width
of the lower end portion.
[0040] In an alternative exemplary embodiment, the light guiding
member includes silicon and additional material. The weight of the
additional material is within a range of about 5% to about 15% of
the weight of the silicon. The additional material is selected from
the group consisting of organic diffusion particles, inorganic
diffusion particles, and a combination thereof.
[0041] In an alternative exemplary embodiment, a refractive index
of the silicon is substantially in a range of 1.4 to 1.6. A
refractive index of the additional material is substantially in a
range of 1.5 to 1.8.
[0042] In an alternative exemplary embodiment, the organic
diffusion particles comprise an organic silicone compound or an
acrylic compound. The inorganic diffusion particles comprise silica
or a calcium carbonate compound.
[0043] A light emitting diode assembly structure includes a light
emitting chip, a color converting layer coated on the light
emitting chip, a light guiding member arranged over the light
emitting chip, and a reflecting member, arranged over the light
guiding member. The reflecting member comprises a first reflecting
surface faced towards the light emitting chip, and wherein the
first reflecting surface is a surface selected from the group
consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof. The
reflecting member comprises a first top surface and a first bottom
surface. The light guiding member comprises a second top surface
and a second bottom surface. The light emitting diode assembly
structure arranges a groove. The groove penetrates from the first
top surface of the reflecting member to a predetermined position
between the second top surface of the light guiding member and the
second bottom surface of the light guiding member. In an
alternative exemplary embodiment, the groove is substantially
symmetrical under all rotations about its center.
[0044] In an alternative exemplary embodiment, the groove is a
cross-shaped groove or a circular groove.
[0045] In an alternative exemplary embodiment, a width of the
groove is in a range from substantially 0.05 mm to substantially
0.3 mm.
[0046] In an alternative exemplary embodiment, the groove comprises
an upper end portion opposite to the color converting layer and a
lower end portion adjacent to the color converting layer, and
wherein a width of the upper end portion is more than or equal to a
width of the lower end portion.
[0047] In an alternative exemplary embodiment, the light guiding
member includes silicon and additional material. The weight of the
additional material is within a range of about 5% to about 15% of
the weight of the silicon. The additional material is selected from
the group consisting of organic diffusion particles, inorganic
diffusion particles, and a combination thereof.
[0048] In an alternative exemplary embodiment, a refractive index
of the silicon is substantially in a range of 1.4 to 1.6. A
refractive index of the additional material is substantially in a
range of 1.5 to 1.8.
[0049] In an alternative exemplary embodiment, the organic
diffusion particles comprise an organic silicone compound or an
acrylic compound. The inorganic diffusion particles comprise silica
or a calcium carbonate compound.
[0050] According to the light emitting diode assembly structure of
the present disclosure, the light guiding member directs the light
emitted by the light emitting chip to irradiate towards the
reflecting surface of reflecting member, so the radiated light can
be reflected toward the exterior of the package, facilitate to the
light emitted by the light emitting chip changing a light guiding
path and a light pattern.
BRIEF DESCRIPTION OF THE DRAWINGS
[0051] Implementations of the present technology will now be
described, by way of example only, with reference to the attached
figures.
[0052] FIG. 1A is a schematic view of a light emitting diode
assembly structure according to a first exemplary embodiment, the
assembly including a reflecting member and a light guiding
member.
[0053] FIG. 1B is a schematic view of a light path of the light
emitting diode assembly structure according to the first exemplary
embodiment.
[0054] FIG. 2A is a schematic view of the reflecting member in a
first mode according to the first exemplary embodiment.
[0055] FIG. 2B is a schematic view of the reflecting member in a
second mode according to the first exemplary embodiment.
[0056] FIG. 2C is a schematic view of the reflecting member in a
third mode according to the first exemplary embodiment.
[0057] FIG. 2D is a schematic view of the reflecting member in a
fourth mode according to the first exemplary embodiment.
[0058] FIG. 3 is a schematic view of a light emitting diode
assembly structure according to a second exemplary embodiment.
[0059] FIG. 4 is a schematic view of a light emitting diode
assembly structure according to a third exemplary embodiment.
[0060] FIG. 5 is a schematic view of a light emitting diode
assembly structure according to a fourth exemplary embodiment.
[0061] FIG. 6A is a schematic view of a light emitting diode
assembly structure according to a fifth exemplary embodiment, the
assembly including a reflecting member and a light guiding
member.
[0062] FIG. 6B is a schematic view of a light path of the light
emitting diode assembly structure of the fifth exemplary
embodiment.
[0063] FIG. 6C is a schematic view of an angle in one mode of the
fifth exemplary embodiment reflecting member.
[0064] FIG. 6D is a schematic view of the angle in a second mode of
the fifth exemplary embodiment reflecting member.
[0065] FIG. 7A is a schematic view of the reflecting member in a
first mode according to the fifth exemplary embodiment.
[0066] FIG. 7B is a schematic view of the reflecting member in a
second mode according to the fifth exemplary embodiment.
[0067] FIG. 7C is a schematic view of the reflecting member in a
third mode according to the fifth exemplary embodiment.
[0068] FIG. 8A is a schematic view of the light guiding member
according to the fifth exemplary embodiment in first mode.
[0069] FIG. 8B is a schematic view of the fifth exemplary
embodiment light guiding member in a second mode.
[0070] FIG. 8C is a schematic view of the fifth exemplary
embodiment light guiding member in a third mode.
[0071] FIG. 8D is a schematic view of the fifth exemplary
embodiment light guiding member in a fourth mode.
[0072] FIG. 8E is a schematic view of the fifth exemplary
embodiment light guiding member in a fifth mode.
[0073] FIG. 8F is a schematic view of the fifth exemplary
embodiment light guiding member in a sixth mode.
[0074] FIG. 9A is a schematic view of a light emitting diode
assembly structure in a first mode according to a sixth exemplary
embodiment, the assembly including a reflecting member, the light
emitting diode assembly structure arranges a groove penetrating a
first top and bottom surfaces of the reflecting member.
[0075] FIG. 9B is a schematic view of the light emitting diode
assembly structure in a second mode according to the sixth
exemplary embodiment.
[0076] FIG. 10A is a top view of the light emitting diode assembly
structure in one mode according to the sixth exemplary
embodiment.
[0077] FIG. 10B is a top view of the light emitting diode assembly
structure in another mode according to the sixth exemplary
embodiment.
[0078] FIG. 11A is a schematic view of a light emitting diode
assembly structure in a first mode according to a seventh exemplary
embodiment, the assembly including a reflecting member and a light
guiding member, the light emitting diode assembly structure
arranges a groove penetrating a first top and bottom surfaces of
the reflecting member and the light guiding member
respectively.
[0079] FIG. 11B is a schematic view of the light emitting diode
assembly structure in a second mode according to the seventh
exemplary embodiment.
[0080] FIG. 12 is a schematic view of the light emitting diode
assembly structure according to an eighth exemplary embodiment.
[0081] FIG. 13 is a schematic view of the light emitting diode
assembly structure according to a ninth exemplary embodiment.
[0082] FIG. 14 is a schematic view of the light emitting diode
assembly structure according to a tenth exemplary embodiment.
[0083] FIG. 15 is a schematic view of the light emitting diode
assembly structure according to an eleventh exemplary
embodiment.
[0084] FIG. 16 is a schematic view of the light emitting diode
assembly structure according to an twelfth exemplary
embodiment.
[0085] FIG. 17 is a schematic view of the light emitting diode
assembly structure according to a thirteenth exemplary
embodiment.
DETAILED DESCRIPTION
[0086] It will be appreciated that for simplicity and clarity of
illustration, where appropriate, reference numerals have been
repeated among the different figures to indicate corresponding or
analogous elements. In addition, numerous specific details are set
forth in order to provide a thorough understanding of the exemplary
embodiments described herein. However, it will be understood by
those of ordinary skill in the art that the exemplary embodiments
described herein can be practiced without these specific details.
In other instances, methods, procedures, and components have not
been described in detail so as not to obscure the related relevant
feature being described. The drawings are not necessarily to scale
and the proportions of certain parts may be exaggerated to better
illustrate details and features. The description is not to be
considered as limiting the scope of the exemplary embodiments
described herein.
[0087] Several definitions that apply throughout this disclosure
will now be presented.
[0088] The term "substantially" means essentially conforming to the
particular dimension, shape or other feature that the term
modifies, such that the component need not be exact. For example,
"substantially cylindrical" means that the object resembles a
cylinder, but may have one or more deviations from a true cylinder.
The term "comprising" or "containing" when utilized, means
"including, but not necessarily limited to"; it specifically
indicates open-ended inclusion or membership in the so-described
combination, group, series and the like. The term "directing" is
intended to mean providing a path or passage for something from one
position into a destination position. The terms "first", "second",
"third" and other terms in the present disclosure are only used as
textual symbols as the circumstances may require, but such
ordination is not limited to using only these terms. It should be
further noted that these terms can be used interchangeably.
[0089] The present disclosure is described in relation to a light
emitting diode assembly structure.
[0090] As shown in FIG. 1A, in the first exemplary embodiment, a
light emitting diode assembly structure 1 includes a package 10 and
a light emitting chip 20 coated by the package 10. The package 10
includes a color converting layer 30, a light guiding member 40,
and a reflecting member 50. The light emitting chip 20 is coated by
the color converting layer 30. The color converting layer 30 is
coated by the light guiding member 40. The reflecting member 50 is
arranged over the light guiding member 40. The light emitting diode
assembly structure 1 enables a wider angle of radiation of light
emitted by the light emitting chip 20.
[0091] The light emitting chip 20 may be a chip selected from the
group consisting of a horizontal type light emitting diode chip, a
vertical type light emitting diode chip, a flip chip type light
emitting diode chip, and a combination thereof. The type of light
emitting chip 20 may be changed as desired by the user.
[0092] The color converting layer 30 is configured for changing a
color of the light emitted by the light emitting chip 20. The color
converting layer 30 may change the color of the light emitted by
the light emitting chip 20 according to the preference of a
user.
[0093] The light guiding member 40 may include, but is not limited
to, polymerized siloxanes (i.e., silicon). The light guiding member
40 is any material with high transparency for coating the light
emitting chip 20. The light guiding member 40 is configured to
adjust the illumination range of the light emitted by the light
emitting chip 20 and to guide the light to reach a pre-determined
position.
[0094] The light guiding member 40 may further include additional
material, so the light emitted by the light emitting chip 20 can be
uniformly irradiated toward an exterior of the light emitting diode
assembly structure 1. The weight of the additional material is
within a range of about 5% to about 15% of the weight of the
silicon. The additional material may include, but is not limited
to, organic diffusion particles, inorganic diffusion particles, or
any combination thereof.
[0095] A refractive index of the silicon is substantially in a
range of 1.4 to 1.6. A refractive index of the additional material
is substantially in a range of 1.5 to 1.8. The refractive index of
the silicon is preferably different from the refractive index of
the additional material. Thus, when the additional material is
mixed with the silicone resin, the light emitted by the light
emitting chip 20 can be scattered by the additional material within
the light guiding member 40, so the light scattered by the
additional material can be more uniform to irradiate toward the
exterior of the light emitting diode assembly structure 1.
[0096] The organic diffusion particles may include, but is not
limited to, an organic silicone compound or an acrylic compound.
The inorganic diffusion particles may include, but is not limited
to, silica (SiO.sub.2), titanium dioxide (TiO.sub.2) or a calcium
carbonate compound. The organic silicone compound may be, but is
not limited to, silicone rubber, silicone resin, or silicone oil.
The acrylic compound may be, but is not limited to,
poly(1-carboxyethylene), polymethyl methacrylate (PMMA),
polytetrafluoroethylene (PTFE).
[0097] A thickness of the light guiding member 40 may be preferably
0.4 mm.
[0098] Referring to FIG. 1B, the reflecting member 50 includes a
first reflecting surface 501. The first reflecting surface 501 is
faced towards the light emitting chip 20. The first reflecting
surface 501 may be planar or non-planar.
[0099] A thickness of the reflecting member 50 may be preferably
0.4 mm.
[0100] A color of the first reflecting surface 501 may be a weak or
faint color, in order to enhance an emission rate of the light
emitted by the light emitting chip 20. The overall color of the
first reflecting surface 501 is preferably silver or white.
[0101] As shown in FIG. 1B, the light emitting chip 20 emits light
100. The light 100 passes through the color converting layer 30,
which can change the color of the light 100 to a desired color. The
light 100 passing through the color converting layer 30 is entered
into the light guiding member 40. Therefore, the light 100 can be
directed within the light guiding member 40 until the light 100 is
irradiated to the reflecting member 50. When the light 100
irradiates towards the first reflecting surface 501, most of the
light 100 is reflected around the light emitting chip 20. The light
100 emitted by the light emitting chip 20 forms a first reflection
by the first reflecting surface 501, and the light 100 reflected by
the first reflecting surface 501 passes through the light guiding
member 40, so the light 100 may be transmitted towards the exterior
of the package 10.
[0102] In an alternative exemplary embodiment, the package 10
further includes a substrate 60. The substrate 60 defines a second
reflecting surface 61 faced towards the first reflecting surface
501 of the reflecting member 50. The light emitting chip 20, the
color converting layer 30, and the light guiding member 40 are
arranged on the second reflecting surface 61 of the substrate 60.
The light 100 reflected by the first reflecting surface 501
irradiates towards the second reflecting surface 61 of the
substrate 60. The light 100 emitted by the light emitting chip 20
forms a second reflection by the second reflecting surface 61 after
the light 100 reflected by the first reflecting surface 501, so the
illuminating range of the light 100 can be enlarged.
[0103] In the exemplary embodiment, the light emitting diode
assembly structure 1 includes the light guiding member 40, the
reflecting member 50 with the first reflecting surface 501, and the
substrate 60 with a second reflecting surface 61. The light guiding
member 40 is formed on the exterior of the light emitting chip 20
and the color converting layer 30. Therefore, the light 100 emitted
by the light emitting chip 20 enters into the light guiding member
40. The light guiding member 40 directs the light 100 to irradiate
towards the first reflecting surface 501 of the reflecting member
50. Thus, the light 100 emitted by the light emitting chip 20 forms
the first reflection by the first reflecting surface 501, and the
light 100 reflected by the first reflecting surface 501 irradiates
towards the exterior of the light emitting chip 20. Furthermore,
when the light 100 passes through the light guiding member 40, the
light 100 may be transmitted further according to a material
property of the light guiding member 40. Thus, a reflected angle
range of the light 100 reflected by the reflecting member 50 can be
enlarged, to facilitate a larger illuminating range.
[0104] In order to enlarge the illuminating range of the light 100
emitted by the light emitting chip 20, the light emitting chip 20
is arranged on the second reflecting surface 61 of the substrate
60. The light 100 reflected by the first reflecting surface 501 of
the reflecting member 50 may irradiate towards the second
reflecting surface 61 of the substrate 60. The light 100 emitted by
the light emitting chip 20 forms the second reflection by the
second reflecting surface 61, so the illuminating range of the
light 100 is wider than the light directly emitted by a light
emitting chip. Light emitted by a light emitting chip of existing
art is subjected to only one reflection.
[0105] As shown in FIG. 2A to FIG. 2D, a light emitting diode
assembly structure 1 includes a package 10 and a light emitting
chip 20 coated by the package 10. The package 10 includes a color
converting layer 30, a light guiding member 40 and a reflecting
member 50. The light emitting chip 20, the color converting layer
30, the light guiding member 40 and the reflecting member 50 are
consistent features among the structures of the first exemplary
embodiment. The difference in a first mode according to the first
exemplary embodiment is that the reflecting member 50 defines a
reflecting surface 501 different from the first exemplary
embodiment, and a top surface of the light guiding member 40
defines a structure according to the reflecting surface 501. The
reflecting surface 501 is faced towards the light emitting chip 20.
The reflecting surface 501 may be a surface selected from the group
consisting of a planar, a concave, a convex, a parabolic, a
multi-segmented, a curved surface, and a combination thereof. The
reflecting surface 501 may be symmetrical or asymmetrical under all
rotations about its center.
[0106] As shown in FIG. 2A, in a first mode according to the first
exemplary embodiment, the light guiding member 40 includes a convex
structure adjacent to the reflecting surface 501 of the reflecting
member 50, and the reflecting surface 501 of the reflecting member
50 includes a concave structure. The concave structure of the
reflecting surface 501 is faced towards the light emitting chip 20.
The reflecting surface 501 of the reflecting member 50 is
symmetrical under all rotations about its center. The light emitted
by the light emitting chip 20 is reflected by the concave structure
of the reflecting surface 501. The light may irradiate within the
package 10, so concentrating the light and making it brighter.
[0107] As shown in FIG. 2B, in a second mode according to the first
exemplary embodiment, the light guiding member 40 includes a
concave structure adjacent to the reflecting surface 501 of the
reflecting member 50, and the reflecting surface 501 of the
reflecting member 50 includes a convex structure. The convex
structure of the reflecting surface 501 is faced towards the light
emitting chip 20. The reflecting surface 501 of the reflecting
member 50 is symmetrical under all rotations about its center. The
light emitted by the light emitting chip 20 is reflected by the
concave structure of the reflecting surface 501, so the light may
travel toward the exterior of the package 10, to facilitate a wider
illumination range.
[0108] As shown in FIG. 2C, in a third mode according to the first
exemplary embodiment, one side of the light guiding member 40
includes a first concave structure and the other side of the light
guiding member 40 includes a first convex structure. The first
concave structure and the first convex structure cooperatively form
a top surface of the light guiding member 40. The reflecting
surface 501 of the reflecting member 50 is asymmetrical. The
reflecting surface 501 includes a first side and a second side. The
first side of the reflecting surface 501 includes a second convex
structure and the second side of the reflecting surface 501
includes a second concave structure. The second concave structure
of the reflecting surface 501 and the second convex structure of
the reflecting surface 501 cooperatively form the reflecting
surface 501. The reflecting surface 501 is substantially S-shaped.
The second concave structure and the second convex structure of the
reflecting surface 501 are faced towards the light emitting chip
20. The light emitted by the light emitting chip 20 is reflected by
the second concave structure of the reflecting surface 501. The
light irradiating the second convex structure of the reflecting
surface 501 is reflected toward the exterior of the package 10, to
facilitate the wider illumination range. The light irradiating the
second concave structure of the reflecting surface 501 is reflected
toward the inside of the package 10, so concentrating the light and
making it brighter.
[0109] As shown in FIG. 2D, in a fourth mode according to the first
exemplary embodiment, one side of the light guiding member 40
includes a first convex structure and the other side of the light
guiding member 40 includes a second convex structure symmetrical in
the first convex structure. The first convex structure and the
second convex structure cooperatively form a top surface of the
light guiding member 40. The reflecting surface 501 of the
reflecting member 50 is symmetrical under all rotations about its
center. The reflecting surface 501 includes a first side and a
second side. The first side of the reflecting surface 501 includes
a first concave structure 5011 and the second side of the
reflecting surface 501 includes a second concave structure 5012.
The first concave structure 5011 of the reflecting surface 501 and
the second convex structure 5012 of the reflecting surface 501
cooperatively form the reflecting surface 501. A third convex
structure 5013 is formed between the first concave structure and
the second concave structure of the reflecting surface 501. The
third convex structure 5013 is faced towards the light emitting
chip 20. The light emitted by the light emitting chip 20 is
reflected by the concave structure of the reflecting surface 501.
The light irradiating the first and second convex structures of the
reflecting surface 501 is reflected toward the exterior of the
package 10, to widen the illumination range. The light irradiating
the third convex structure 5013 of the reflecting surface 501 is
reflected towards the inside of the package 10, to make the light
brighter.
[0110] As shown in FIG. 3, in a second exemplary embodiment, a
light emitting diode assembly structure 2 includes a package 10 and
a light emitting chip 20 coated by the package 10. The package 10
includes a color converting layer 30, a light guiding member 40 and
a reflecting member 50. The light emitting chip 20, the color
converting layer 30, the light guiding member 40, and the
reflecting member 50 are substantially consistent features among
the structures of the first exemplary embodiment. The difference is
that the light emitting chip 20 is coated by the light guiding
member 40, the light guiding member 40 is coated by the color
converting layer 30, and the reflecting member 50 is arranged above
the color converting layer 30.
[0111] The light emitting chip 20 may be a chip selected from the
group consisting of a horizontal type light emitting diode chip, a
vertical type light emitting diode chip, a flip chip type light
emitting diode chip, and a combination thereof. A user may select
or change any one of these. The reflecting member 50 may change
according to the first exemplary embodiment in the above modes or a
combination thereof. The reflecting surface 501 may be a surface
selected from the group consisting of a planar, a concave, a
convex, a parabolic, a multi-segmented, a curved surface, and a
combination thereof. The reflecting surface 501 may be symmetrical
or asymmetrical under all rotations about its center.
[0112] As shown in FIG. 4, in a third exemplary embodiment, a light
emitting diode assembly structure 3 includes a package 10 and a
light emitting chip 20 coated by the package 10. The package 10
includes a color converting layer 30, a light guiding member 40 and
a reflecting member 50. The light emitting chip 20, the color
converting layer 30, the light guiding member 40 and the reflecting
member 50 are substantially consistent features among the
structures of the first exemplary embodiment. The difference is
that the color converting layer 30 is not coated by the light
guiding member 40, and the light guiding member 40 is arranged
above the color converting layer 30 and faced towards the light
emitting chip 20.
[0113] The light emitting chip 20 may be selected from the group
consisting of a horizontal type light emitting diode chip, a
vertical type light emitting diode chip, a flip chip type light
emitting diode chip, and a combination thereof. The reflecting
member 50 may change according to the first exemplary embodiment in
the above modes or a combination thereof. The reflecting surface
501 may be a surface selected from the group consisting of a
planar, a concave, a convex, a parabolic, a multi-segmented, a
curved surface, and a combination thereof. The reflecting surface
501 may be symmetrical or asymmetrical under all rotations about
its center.
[0114] As shown in FIG. 5, in a fourth exemplary embodiment, a
light emitting diode assembly structure 4 includes a package 10 and
a light emitting chip 20 coated by the package 10. The package 10
includes a color converting layer 30, a light guiding member 40,
and a reflecting member 50. The light emitting chip 20, the color
converting layer 30, the light guiding member 40 and the reflecting
member 50 are substantially consistent features among the
structures of the first exemplary embodiment. The difference is
that the light guiding member 40 is arranged above the light
emitting chip 20 and is coated by the color converting layer 30,
and the reflecting member 50 is arranged above the color converting
layer 30.
[0115] The light emitting chip 20 may be selected from the group
consisting of a horizontal type light emitting diode chip, a
vertical type light emitting diode chip, a flip chip type light
emitting diode chip, and a combination thereof. The reflecting
member 50 is applicable to the reflecting member 50 according to
the first exemplary embodiment in the above modes or a combination
thereof. The reflecting surface 501 may be a surface selected from
the group consisting of a planar, a concave, a convex, a parabolic,
a multi-segmented, a curved surface, and a combination thereof. The
reflecting surface 501 may be symmetrical or asymmetrical under all
rotations about its center.
[0116] As shown in FIG. 6A to FIG. 6D, in a fifth exemplary
embodiment, a light emitting diode assembly structure 5 includes a
package 10A and a light emitting chip 20A coated by the package
10A. The package 10A includes a color converting layer 30A, a light
guiding member 40A, and a reflecting member 50A. The light emitting
chip 20A is coated by the color converting layer 30A. The light
guiding member 40A is arranged around a periphery of the color
converting layer 30A. The reflecting member 50A is arranged on an
inner surface of the light guiding member 40A. The reflecting
member 50A is arranged around a periphery of the light emitting
chip 20A.
[0117] In order to improve illumination efficiency, a width of the
cross-section of the reflecting member 50A increases gradually in a
direction away from the light emitting chip 20A.
[0118] The reflecting member 50A includes a reflecting surface 501A
facing to the light emitting chip 20A. The reflecting surface 501A
and a lower surface of the light guiding member 40A form an angle
.alpha..
[0119] The angle .alpha. is an obtuse angle. That is, the angle
.alpha. is substantially in a range of more than 90 degrees to less
than 180 degrees. Thus, the light emitted by the light emitting
chip 20A is irradiated onto the reflecting surface 501A, and then
reflected toward an exterior of the package 10A.
[0120] The reflecting surface 501A may be planar or non-planar. A
color of the reflecting surface 501A may be a weak or faint color,
in order to enhance an emission rate of the light emitted by the
light emitting chip 20A. The overall color of the reflecting
surface 501A is preferably silver or white.
[0121] As shown in FIG. 6B, the light emitting chip 20A emits a
light 100A. The light 100A passes through the color converting
layer 30A, which can change the color of the light 100A to a
desired color. A portion of the light 100A is directly irradiated
towards the exterior of the package body 10A, the other portion of
the light 100A irradiates towards the reflecting surface 501A of
the reflecting member 50A. The light is then reflected towards the
exterior of the package 10A, so the irradiation range of the light
100A is enlarged, to facilitate external irradiation.
[0122] FIG. 6C and FIG. 6D are a top plan schematic view of light
emitting diode assembly structure 5.
[0123] As shown in FIG. 6C, in a first mode according to the fifth
exemplary embodiment, the reflecting member 50A includes a front
panel 51A, a rear panel 52A, a first side panel 53A, and a second
side panel 54A. The front panel 51A and the rear panel 52A may be
symmetrical or asymmetrical. The first side panel 53A and the
second side panel 54A may be symmetrical or asymmetrical. In the
exemplary embodiment, the front panel 51A, the rear panel 52A, the
first side panel 53A, and the second side panel 54A are separately
constructed in a trapezoidal shape. The front panel 51A and the
rear panel 52A are symmetrical, the first side panel 53A and the
second side panel 54A are also symmetrical, and a size of the front
panel 51A is different from a size of the first side panel 54A. The
reflecting member 50A is substantially a frustum. Bottom and upper
ends of the reflecting member 50A cooperatively form a rectangular
shape. Each trapezoidal shape includes a wider upper part 55A and a
narrower lower part 56A, to facilitate stronger irradiation of the
reflecting surface 501A. An inner surface of the front panel 51A,
the rear panel 52A, the first side panel 53A, and the second side
panel 54A cooperatively form the reflecting surface 501A. The
reflecting surface 501A is a sealed and continuous structural
surface, to facilitate greater external illumination.
[0124] In an alternative exemplary embodiment, the front panel 51A,
the rear panel 52A, the first side panel 53A, and the second side
panel 54A may be separately constructed and of any shape, to
facilitate more irradiation of the reflecting surface 501A.
[0125] As shown in FIG. 6D, in the second mode according to the
fifth exemplary embodiment, the reflecting member 50A is a
substantially consistent feature among the structures of the first
mode of FIG. 6C. The difference is that the front panel 51A, the
rear panel 52A, the first side panel 53A, and the second side panel
54A have the same trapezoidal shape. In the exemplary embodiment,
the trapezoidal shape is an isosceles trapezium. Bottom and upper
ends of the reflecting member 50A cooperatively form a square
shape. Each trapezoidal shape has a base angle .beta. adjacent to
the light emitting chip 20A. The base angle .beta. can be adjusted
according to the preference of the user, so the light emitted by
the light emitting chip 20A may change its light path, for
different emission angles. Therefore, the illuminating efficiency
of the light may be improved.
[0126] The light emitting chip 20 may be selected from the group
consisting of a horizontal type light emitting diode chip, a
vertical type light emitting diode chip, a flip chip type light
emitting diode chip, and a combination thereof.
[0127] As shown in FIG. 7A to FIG. 7C, the light emitting diode
assembly structure 5 is a substantially consistent feature among
the structures of the fifth exemplary embodiment. The difference is
that the reflecting member 50A defines a different structure of the
reflecting surface 501A. The reflecting surface 501A of the
reflecting member 50A is arranged around the periphery of the light
emitting chip 20. The reflecting surface 501A may be a surface
selected from the group consisting of a planar, a concave, a
convex, a parabolic, a multi-segmented, a curved surface, and a
combination thereof. The reflecting surface 501 may be symmetrical
or asymmetrical under all rotations about its center.
[0128] In an alternative exemplary embodiment, the configuration of
the reflecting surface 501A can be changed according to the
preference of the user, so the structure of the reflecting surface
501A is not limited to that of the above exemplary embodiment. In
addition, the combined structure of the light guiding member 40A
and the reflective member 50A is not limited to the fixed form
structure shown in the above-described exemplary embodiment. The
base angle .beta. of each trapezoidal shape of the reflective
member 50A can be adjusted according to the preference of the
user.
[0129] As shown in FIG. 7A, in the first mode according to the
fifth exemplary embodiment, the reflecting surface 501A of the
reflective member 50A is a convex structure. The light emitted by
the light emitting chip 20A is reflected by the reflecting surface
501A of the reflective member 50A. The light irradiating the convex
structure of the reflecting surface 501A is reflected towards the
exterior of the package 10A, to facilitate an enlarged irradiation
range.
[0130] As shown in FIG. 7B, in the second mode according to the
fifth exemplary embodiment, the reflecting surface 501A of the
reflective member 50A is a concave structure. The light emitted by
the light emitting chip 20A is reflected by the reflecting surface
501A of the reflective member 50A. The light irradiating the
concave structure of the reflecting surface 501A is reflected
toward the inside surface of the package 10A, so concentrating the
light and making it brighter.
[0131] As shown in FIG. 7C, in the third mode according to the
fifth exemplary embodiment, the reflecting surface 501A of the
reflective member 50A is a plane. The reflecting surface 501A and
the bottom surface of the light emitting chip 20A form an angle
.alpha. facing the light emitting chip 20A. The angle .alpha. may
preferably be in a range of more than 90 degrees to less than 180
degrees. The light emitted by the light emitting chip 20A is
reflected by the reflecting surface 501A of the reflective member
50A. When the angle .alpha. is less than 90 degrees, most of the
light irradiating the reflecting surface 501A is reflected toward
the inside surface of the package 10A, so concentrating the light
and making it brighter. When the angle .alpha. is more than 90
degrees, most of the light irradiating the reflecting surface 501A
is reflected towards the exterior of the package 10A for enlarging
irradiation.
[0132] As shown in FIG. 8A to FIG. 8F, the light emitting diode
assembly structure 5 has substantially consistent features among
the structures of the fifth exemplary embodiment. The color
converting layer 30A covers the light emitting chip 20A, and the
reflection member 50A is arranged at the side of the color
converting layer 30A. The light guiding member 40A covers the
periphery of the color converting layer 30A and the reflective
member 50A. The difference is that the light guiding member 40A
defines different structures. The light guiding member 40A includes
a light exiting surface 401A faced towards the light emitting chip
20A. The structure of the light exiting surface 401A may present a
continuous surface or a discontinuous surface. The continuous and
the discontinuous surface structures may be a plane surface, an arc
surface, a n-shaped surface, and a v-shaped surface.
[0133] As shown in FIG. 8A, in a first mode according to the fifth
exemplary embodiment, the light exiting surface 401A is a plane
surface. As shown in FIG. 8B, in a second mode according to the
fifth exemplary embodiment, the light exiting surface 401A is an
arc surface. As shown in FIG. 8C, in a third mode according to the
fifth exemplary embodiment, the light exiting surface 401A is a
discontinuous and v-shaped groove surface. As shown in FIG. 8D, in
a fourth mode according to the fifth exemplary embodiment, the
light exiting surface 401A is a discontinuous and arced surface. As
shown in FIG. 8E, in a fifth mode according to the fifth exemplary
embodiment, the light exiting surface 401A is a discontinuous and
n-shaped structure. As shown in FIG. 8F, in a sixth mode according
to the fifth exemplary embodiment, the light exiting surface 401A
is a continuous and v-shaped groove surface. The light exiting
surface 401A defines the plane surface, the arc surface, the
n-shaped surface, and the v-shaped groove surface, facilitating any
desired changes to the path and pattern of the light emitted by the
light emitting chip 20A.
[0134] As shown in FIG. 9A and FIG. 9B, in a sixth embodiment, a
light emitting diode assembly structure 6 is disclosed herein. The
light emitting diode assembly structure 6 is a substantially
consistent feature among the structures of the first exemplary
embodiment. The reflecting member 50 includes a top surface 51
opposite to the light guiding member 40 and a bottom surface 52 in
contact with the light guiding member 40. The difference is that
the light emitting diode assembly structure 6 arranges a groove 70
above the reflective chip 20, and the groove 70 penetrates the top
and bottom surfaces 51, 52 of the reflecting member 50.
Specifically, the groove 70 penetrates from the top surface 51 of
the reflecting member 50 to the bottom surface 51 of the reflecting
member 50.
[0135] It would therefore be understood that the groove 70 located
over the light emitting chip 20, so the light emitted by the light
emitting chip 20 can pass through the groove 70 to the exterior of
the package 10 for enhancing irradiation, so the problem that a
luminescence of the light emitting chip 20 is too dark is avoid,
which is caused by the light exiting surface entirely configured as
a reflective surface.
[0136] In order to ensure the light emitted by the light emitting
chip 20 can be uniformly dispersed, the groove 70 may be
substantially symmetrical under all rotations about its center. The
groove 70 is configured as, but is not limited to, a cross-shaped
groove or a circular groove. A width of the groove may be
preferably in a range from about 0.05 mm to 0.3 mm.
[0137] The top surface 51 of the reflecting member 50 is planar
surface, and the bottom surface 52 of the reflecting member 50 is
the reflecting surface 501. The top surface 51 of the reflecting
member 50 is aligned with the bottom surface 52 of the reflecting
member 50.
[0138] The groove 70 includes two opposing side walls 701. Each of
the side walls 701 and the bottom surface 502 of the reflecting
member 50 form an angle .gamma. opposite to the groove 70. The
angle .gamma. is a range from 90 degrees to more than 180 degrees.
When the reflecting surface 501 of the reflecting member 50 is the
planar surface, the reflecting surface 501 is perpendicular to the
side walls 701.
[0139] The groove 70 includes an upper end portion 702 opposite to
the light guiding member 40 and a lower end portion 703 adjacent to
the light guiding member 40. A width of the upper end portion 702
is more than or equal to a width of the lower end portion 703.
[0140] It would therefore be understood that a width of the
cross-section of the groove 70 increases gradually in a direction
away from the light emitting chip 20, to facilitate an enhancement
of the irradiating efficiency of the light emitting chip 20.
[0141] The reflecting member 50 is applicable to the reflecting
member 50 according to the first exemplary embodiment in the above
modes or a combination thereof. The reflecting surface 501 may be a
surface selected from the group consisting of a planar, a concave,
a convex, a parabolic, a multi-segmented, a curved surface, and a
combination thereof. The reflecting surface 501 may be symmetrical
or asymmetrical under all rotations about its center.
[0142] As shown in FIG. 9A, in the embodiment, an angle .gamma.
forms between the side wall 701 and the bottom surface of the
reflecting member 50 is 90 degrees. That is, the side wall 701 is
perpendicular to the bottom surface 502. A width of the upper end
portion 702 is equal to a width of the lower end portion 703. The
cross-section of the groove 70 is configured as a rectangular shape
or a cross-shaped structure.
[0143] As shown in FIG. 9B, in the embodiment, an angle .gamma.
forms between the side wall 701 and the bottom surface of the
reflecting member 50 is more than 90 degrees. A width of the upper
end portion 702 is lee than a width of the lower end portion 703.
The cross-section of the groove 70 an inverted trapezoidal
shape.
[0144] The inverted trapezoidal shape can be an isosceles trapezoid
and a non-isosceles trapezoid shape.
[0145] As shown in FIG. 10A, the groove 70 is the cross-shaped
groove. The cross-shaped groove divides the reflecting member 50
into four reflecting regions 503 with a same size and symmetrical
distribution, so the light emitted by the light emitting chip 20
can uniformly radiate to the surroundings of the package 10 through
the reflecting regions 503. A junction of the cross-shaped groove
is aligned with a center of the light emitting chip 20. Therefore,
the light emitted by the light emitting chip 20 is partially
irradiated to the exterior of the package 10 passed through the
groove 70, to facilitate an improvement of the light emission
luminance.
[0146] As shown in FIG. 10B, the groove 70 is a circular groove.
The circular groove arranges above the light emitting chip 20. The
circular groove arranges on a middle portion of the reflecting
member 50. The reflecting member 50 includes a reflecting region
503. A diameter of the circular groove is in a range from 0.1 nm to
0.3 nm, so the light emitted by the light emitting chip 20
partially irradiated to the exterior of the package 10 passed
through the groove 70, to facilitate an improvement of the light
emission luminance.
[0147] As shown in FIG. 11A and FIG. 11B, in a seventh embodiment,
a light emitting diode assembly structure 7 is disclosed herein.
The light emitting diode assembly structure 7 is a substantially
consistent feature among the structures of the first exemplary
embodiment. The light emitting chip 20 includes a top surface 21 in
contact with the light color converting layer 30 and aligned with
the reflecting surface 501 of the reflecting member 50. The light
color converting layer 30 includes a top surface 31 in contact with
the light guiding member 40 and aligned with the top surface 21 of
the light emitting chip 20. The top surface 31 of the light color
converting layer 30 is in opposite to the light emitting chip 20
and aligned with the reflecting surface 501 of the reflecting
member 50. The light guiding member 40 includes a top surface 41 in
contact with the reflecting member 50 and a bottom surface 42 in
contact with the top surface 31 of the color converting layer 30.
The reflecting member 50 includes a top surface 51 opposite to the
light guiding member 40 and a bottom surface 52 in contact with the
light guiding member 40. The difference is that the light emitting
diode assembly structure 7 arranges a groove 70 above the
reflective chip 20, and the groove 70 penetrates the top and bottom
51, 52 surfaces of the reflecting member 50 and the top and bottom
surfaces 41, 42 of the light guiding member 40 respectively.
Specifically, the groove 70 penetrates from the top surface 51 of
the reflecting member 50 to the bottom surface 42 of the light
guiding member 40.
[0148] The top surface 51 of the reflecting member 50 is planar
surface, and the bottom surface 52 of the reflecting member 50 is
the reflecting surface 501. The top surface 51 of the reflecting
member 50 is aligned with the bottom surface 52 of the reflecting
member 50.
[0149] The groove 70 includes two opposing side walls 701. Each of
the side walls 701 and the bottom surface 502 of the reflecting
member 50 form an angle .gamma. opposite to the groove 70. The
angle .gamma. is in a range from 90 degrees to more than 180
degrees.
[0150] The groove 70 includes an upper end portion 702 opposite to
the color converting layer 30 and a lower end portion 703 adjacent
to the color converting layer 30. A width of the upper end portion
702 is more than or equal to a width of the lower end portion
703.
[0151] As shown in FIG. 11A, in a first mode, an angle .gamma.
forms between the side wall 701 and the bottom surface of the
reflecting member 50 is 90 degrees. That is, the side wall 701 is
perpendicular to the bottom surface 502. A width of the upper end
portion 702 is equal to a width of the lower end portion 703. The
cross-section of the groove 70 is a rectangular shape or a
cross-shaped structure.
[0152] As shown in FIG. 11B, in a second mode, an angle .gamma.
forms between the side wall 701 and the bottom surface of the
reflecting member 50 is more than 90 degrees. It would therefore be
understood that a width of the cross-section of the groove 70
increases gradually in a direction away from the light emitting
chip 20, to facilitate an enhancement of the irradiating efficiency
of the light emitting chip 20. That is, a width of the upper end
portion 702 is more than a width of the lower end portion 703. The
cross-section of the groove 70 an inverted trapezoidal shape.
[0153] The inverted trapezoidal shape can be an isosceles trapezoid
and a non-isosceles trapezoid shape.
[0154] The groove 70 is applicable to the reflecting member 50
according to the sixth exemplary embodiment in the above modes or a
combination thereof. The groove 70 can be a cross-shaped groove or
a circular groove. The features of the trench 70 are not described
here.
[0155] The reflecting member 50 is applicable to the reflecting
member 50 according to the first exemplary embodiment in the above
modes or a combination thereof. The reflecting surface 501 may be a
surface selected from the group consisting of a planar, a concave,
a convex, a parabolic, a multi-segmented, a curved surface, and a
combination thereof. The reflecting surface 501 may be symmetrical
or asymmetrical under all rotations about its center.
[0156] As shown in FIG. 13, in an eighth embodiment, a light
emitting diode assembly structure 8 is disclosed herein. The light
emitting diode assembly structure 8 is a substantially consistent
feature among the structures of the first exemplary embodiment. The
light emitting chip 20 includes a top surface 21 in contact with
the light color converting layer 30 and aligned with the reflecting
surface 501 of the reflecting member 50. The light color converting
layer 30 includes a top surface 31 in contact with the light
guiding member 40 and aligned with the top surface 21 of the light
emitting chip 20. The top surface 31 of the light color converting
layer 30 is in opposite to the light emitting chip 20 and aligned
with the reflecting surface 501 of the reflecting member 50. The
light guiding member 40 includes a top surface 41 in contact with
the reflecting member 50 and a bottom surface 42 in contact with
the top surface 31 of the color converting layer 30. The reflecting
member 50 includes a top surface 51 opposite to the light guiding
member 40 and a bottom surface 52 in contact with the light guiding
member 40. The difference is that the light emitting diode assembly
structure 8 arranges a groove 70 above the reflective chip 20, and
the groove 70 penetrates the top and bottom 51, 52 surfaces of the
reflecting member 50 and the top surface 41 of the light guiding
member 40 respectively. Specifically, the groove 70 penetrates from
the top surface 51 of the reflecting member 50 to the top surface
41 of the light guiding member 40.
[0157] The groove 70 may penetrate from the top surface 51 of the
reflecting member 50 to a predetermined position between the top
surface 41 of the light guiding member 40 and the bottom surface 42
of the light guiding member 40.
[0158] The groove 70 preferably penetrates from the top surface 51
of the reflecting member 50 to a middle position between the top
surface 41 of the light guiding member 40 and the bottom surface 42
of the light guiding member 40.
[0159] The groove 70 is applicable to the reflecting member 50
according to the sixth exemplary embodiment in the above modes or a
combination thereof. The groove 70 can be a cross-shaped groove or
a circular groove. The features of the trench 70 are not described
here.
[0160] The reflecting member 50 is applicable to the reflecting
member 50 according to the first exemplary embodiment in the above
modes or a combination thereof. The reflecting surface 501 may be a
surface selected from the group consisting of a planar, a concave,
a convex, a parabolic, a multi-segmented, a curved surface, and a
combination thereof. The reflecting surface 501 may be symmetrical
or asymmetrical under all rotations about its center.
[0161] As shown in FIG. 13, in a ninth embodiment, a light emitting
diode assembly structure 9 is disclosed herein. The light emitting
diode assembly structure 9 is a substantially consistent feature
among the structures of the second exemplary embodiment. The
reflecting member 50 includes a top surface 51 opposite to the
light guiding member 40 and a bottom surface 52 in contact with the
light guiding member 40. The difference is that the light emitting
diode assembly structure 9 arranges a groove 70 above the
reflective chip 20, and the groove 70 penetrates the top and bottom
surfaces 51, 52 of the reflecting member 50. Specifically, the
groove 70 penetrates from the top surface 51 of the reflecting
member 50 to the bottom surface 51 of the reflecting member 50.
[0162] The groove 70 is applicable to the reflecting member 50
according to the sixth exemplary embodiment in the above modes or a
combination thereof. The groove 70 can be a cross-shaped groove or
a circular groove. The features of the trench 70 are not described
here.
[0163] The reflecting member 50 is applicable to the reflecting
member 50 according to the first exemplary embodiment in the above
modes or a combination thereof. The reflecting surface 501 may be a
surface selected from the group consisting of a planar, a concave,
a convex, a parabolic, a multi-segmented, a curved surface, and a
combination thereof. The reflecting surface 501 may be symmetrical
or asymmetrical under all rotations about its center.
[0164] As shown in FIG. 14, in a tenth embodiment, a light emitting
diode assembly structure 10 is disclosed herein. The light emitting
diode assembly structure 10 is a substantially consistent feature
among the structures of the third exemplary embodiment. The
reflecting member 50 includes a top surface 51 opposite to the
light guiding member 40 and a bottom surface 52 in contact with the
light guiding member 40. The difference is that the light emitting
diode assembly structure 10 arranges a groove 70 above the
reflective chip 20, and the groove 70 penetrates the top and bottom
surfaces 51, 52 of the reflecting member 50. Specifically, the
groove 70 penetrates from the top surface 51 of the reflecting
member 50 to the bottom surface 51 of the reflecting member 50.
[0165] The groove 70 is applicable to the reflecting member 50
according to the sixth exemplary embodiment in the above modes or a
combination thereof. The groove 70 can be a cross-shaped groove or
a circular groove. The features of the trench 70 are not described
here.
[0166] The reflecting member 50 is applicable to the reflecting
member 50 according to the first exemplary embodiment in the above
modes or a combination thereof. The reflecting surface 501 may be a
surface selected from the group consisting of a planar, a concave,
a convex, a parabolic, a multi-segmented, a curved surface, and a
combination thereof. The reflecting surface 501 may be symmetrical
or asymmetrical under all rotations about its center.
[0167] As shown in FIG. 15, in an eleventh embodiment, a light
emitting diode assembly structure 11 is disclosed herein. The light
emitting diode assembly structure 11 is a substantially consistent
feature among the structures of the third exemplary embodiment. The
light emitting chip 20 includes a top surface 21 in contact with
the light color converting layer 30 and aligned with the reflecting
surface 501 of the reflecting member 50. The light color converting
layer 30 includes a top surface 31 in contact with the light
guiding member 40 and aligned with the top surface 21 of the light
emitting chip 20. The top surface 31 of the light color converting
layer 30 is in opposite to the light emitting chip 20 and aligned
with the reflecting surface 501 of the reflecting member 50. The
light guiding member 40 includes a top surface 41 in contact with
the reflecting member 50 and a bottom surface 42 in contact with
the top surface 31 of the color converting layer 30. The reflecting
member 50 includes a top surface 51 opposite to the light guiding
member 40 and a bottom surface 52 in contact with the light guiding
member 40. The difference is that the light emitting diode assembly
structure 11 arranges a groove 70, which penetrates the top and
bottom surfaces 51, 52 of the reflecting member 50 and the top and
bottom surfaces 41, 42 of the light guiding member 40 respectively.
Specifically, the groove 70 penetrates from the top surface 51 of
the reflecting member 50 to the bottom surface 42 of the light
guiding member 40.
[0168] The groove 70 is applicable to the reflecting member 50
according to the sixth exemplary embodiment in the above modes or a
combination thereof. The groove 70 can be a cross-shaped groove or
a circular groove. The features of the trench 70 are not described
here.
[0169] The reflecting member 50 is applicable to the reflecting
member 50 according to the first exemplary embodiment in the above
modes or a combination thereof. The reflecting surface 501 may be a
surface selected from the group consisting of a planar, a concave,
a convex, a parabolic, a multi-segmented, a curved surface, and a
combination thereof. The reflecting surface 501 may be symmetrical
or asymmetrical under all rotations about its center.
[0170] As shown in FIG. 16, in a twelfth embodiment, a light
emitting diode assembly structure 12 is disclosed herein. The light
emitting diode assembly structure 12 is a substantially consistent
feature among the structures of the third exemplary embodiment. The
light emitting chip 20 includes a top surface 21 in contact with
the light color converting layer 30 and aligned with the reflecting
surface 501 of the reflecting member 50. The light color converting
layer 30 includes a top surface 31 in contact with the light
guiding member 40 and aligned with the top surface 21 of the light
emitting chip 20. The top surface 31 of the light color converting
layer 30 is in opposite to the light emitting chip 20 and aligned
with the reflecting surface 501 of the reflecting member 50. The
light guiding member 40 includes a top surface 41 in contact with
the reflecting member 50 and a bottom surface 42 in contact with
the top surface 31 of the color converting layer 30. The reflecting
member 50 includes a top surface 51 opposite to the light guiding
member 40 and a bottom surface 52 in contact with the light guiding
member 40. The difference is that the light emitting diode assembly
structure 11 arranges a groove 70 above the reflective chip 20, and
the groove 70 penetrates the top and bottom 51, 52 surfaces of the
reflecting member 50 and the top surface 41 of the light guiding
member 40 respectively. Specifically, the groove 70 penetrates from
the top surface 51 of the reflecting member 50 to the top surface
41 of the light guiding member 40.
[0171] The groove 70 may penetrate from the top surface 51 of the
reflecting member 50 to a predetermined position between the top
surface 41 of the light guiding member 40 and the bottom surface 42
of the light guiding member 40.
[0172] The groove 70 preferably penetrates from the top surface 51
of the reflecting member 50 to a middle position between the top
surface 41 of the light guiding member 40 and the bottom surface 42
of the light guiding member 40.
[0173] The groove 70 is applicable to the reflecting member 50
according to the sixth exemplary embodiment in the above modes or a
combination thereof. The groove 70 can be a cross-shaped groove or
a circular groove. The features of the trench 70 are not described
here.
[0174] The reflecting member 50 is applicable to the reflecting
member 50 according to the first exemplary embodiment in the above
modes or a combination thereof. The reflecting surface 501 may be a
surface selected from the group consisting of a planar, a concave,
a convex, a parabolic, a multi-segmented, a curved surface, and a
combination thereof. The reflecting surface 501 may be symmetrical
or asymmetrical under all rotations about its center.
[0175] As shown in FIG. 18, in a thirteenth embodiment, a light
emitting diode assembly structure 13 is disclosed herein. The light
emitting diode assembly structure 13 is a substantially consistent
feature among the structures of the fourth exemplary embodiment.
The reflecting member 50 includes a top surface 51 opposite to the
light guiding member 40 and a bottom surface 52 in contact with the
light guiding member 40. The difference is that the light emitting
diode assembly structure 13 arranges a groove 70 above the light
emitting chip 20, and the groove 70 penetrates the top and bottom
surfaces 51, 52 of the reflecting member 50. Specifically, the
groove 70 penetrates from the top surface 51 of the reflecting
member 50 to the bottom surface 51 of the reflecting member 50.
[0176] The groove 70 is applicable to the reflecting member 50
according to the sixth exemplary embodiment in the above modes or a
combination thereof. The groove 70 can be a cross-shaped groove or
a circular groove. The features of the trench 70 are not described
here.
[0177] The reflecting member 50 is applicable to the reflecting
member 50 according to the first exemplary embodiment in the above
modes or a combination thereof. The reflecting surface 501 may be a
surface selected from the group consisting of a planar, a concave,
a convex, a parabolic, a multi-segmented, a curved surface, and a
combination thereof. The reflecting surface 501 may be symmetrical
or asymmetrical under all rotations about its center.
[0178] The light emitting diode assembly structure of the present
disclosure defines the combined structure of the light emitting
chip and the light guiding member, to improve the light irradiating
efficiency and enlarge the irradiation range. The light guiding
member surrounds the side of the color converting layer and the
light emitting chip. The light emitted by the light emitting chip
passes through the color converting layer and the light guiding
member, and the light guiding member guides the light to irradiate
towards the reflecting surface. The light onto the reflecting
surface is reflected towards the light guiding member. Thus, the
light emitted by the light emitting chip generates a first
reflection, and the light reflected by the reflecting surface
irradiates towards the exterior of the light emitting chip.
Furthermore, when the light passes through the light guiding
member, the light may be transmitted a farther distance according
to a material property of the light guiding member. Thus, a
reflected angle range of the light reflected by the reflecting
member can be enlarged. In addition, the light emitting chip is
arranged on the reflecting surface of the substrate. The light
reflected by the reflecting surface of the reflecting member may
irradiate towards the reflecting surface of the substrate. The
light emitted by the light emitting chip is subjected to a second
reflection, so that the illuminating range of such light is wider
than the range directly emitted by a light emitting chip. The
present disclosure also changes the structure of the reflecting
member to change the light guiding path and the light pattern.
[0179] According to another light emitting diode assembly structure
of the present disclosure, the reflecting member and the light
guiding member surrounds the light emitting chip. More light
emitted by the light emitting chip irradiates towards the
reflecting surface of reflecting member by the light guiding
member. The light emitted by the light emitting chip irradiating
the reflecting surface of reflecting member is reflected towards
the exterior of the package.
[0180] According to further another light emitting diode assembly
structure of the present disclosure, the groove penetrates the
first top and bottom surfaces of the reflecting member or
penetrates the first top and bottom surfaces of the reflecting
member and the second top and bottom surfaces of the light guiding
member respectively. The groove is arranged over the light emitting
chip. Thereby, the light emitted by the light emitting chip can
pass through the groove to the exterior of the package for
enhancing irradiation, so the problem that a luminescence of the
light emitting chip is too dark is avoid, which is caused by the
light exiting surface entirely configured as a reflective
surface.
[0181] The exemplary embodiments illustrated and described above
are only examples. Many details are often found in the art such as
the other features of a light emitting diode assembly structure.
Therefore, many such details are neither illustrated nor described.
Even though numerous characteristics and advantages of the present
technology have been set forth in the foregoing description,
together with details of the structure and function of the present
disclosure, the disclosure is illustrative only, and changes may be
made in the detail, especially in matters of shape, size, and
arrangement of the parts within the principles of the present
disclosure, up to and including the full extent established by the
broad general meaning of the terms used in the claims. It will
therefore be appreciated that the exemplary embodiments described
above may be modified within the scope of the claims.
* * * * *