U.S. patent application number 14/858477 was filed with the patent office on 2018-01-18 for optoelectronic element.
The applicant listed for this patent is EPISTAR CORPORATION. Invention is credited to Hsing-Chao CHEN, Hung-Hsuan CHEN, Tzer-Perng CHEN, Cheng-Nan HAN, Min-Hsun HSIEH, Tsung-Xian LEE, Hsin-Mao LIU, Chih-Peng NI, Masafumi SANO, Ching San TAO, Chih-Ming WANG, Jen-Chau WU.
Application Number | 20180019382 14/858477 |
Document ID | / |
Family ID | 49620906 |
Filed Date | 2018-01-18 |
United States Patent
Application |
20180019382 |
Kind Code |
A9 |
HAN; Cheng-Nan ; et
al. |
January 18, 2018 |
OPTOELECTRONIC ELEMENT
Abstract
An optoelectronic element includes an optoelectronic unit, a
first metal layer, a second metal layer, a conductive layer and a
transparent structure. The optoelectronic unit has a central line
in a top view, a top surface, and a bottom surface. The second
metal layer is formed on the top surface, and has an extension
portion crossing over the central line and extending to the first
metal layer. The conductive layer covers the first metal layer and
the extension portion. The transparent structure covers the bottom
surface without covering the top surface.
Inventors: |
HAN; Cheng-Nan; (Hsinchu,
TW) ; LEE; Tsung-Xian; (Hsinchu, TW) ; HSIEH;
Min-Hsun; (Hsinchu, TW) ; CHEN; Hung-Hsuan;
(Hsinchu, TW) ; LIU; Hsin-Mao; (Hsinchu, TW)
; CHEN; Hsing-Chao; (Hsinchu, TW) ; TAO; Ching
San; (Hsinchu, TW) ; NI; Chih-Peng; (Hsinchu,
TW) ; CHEN; Tzer-Perng; (Hsinchu, TW) ; WU;
Jen-Chau; (Hsinchu, TW) ; SANO; Masafumi;
(Hsinchu, TW) ; WANG; Chih-Ming; (Hsinchu,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
EPISTAR CORPORATION |
Hsinchu |
|
TW |
|
|
Prior
Publication: |
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Document Identifier |
Publication Date |
|
US 20160013371 A1 |
January 14, 2016 |
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Family ID: |
49620906 |
Appl. No.: |
14/858477 |
Filed: |
September 18, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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13886083 |
May 2, 2013 |
9142740 |
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14858477 |
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11674371 |
Feb 13, 2007 |
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13886083 |
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11249680 |
Oct 12, 2005 |
7192797 |
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11674371 |
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12840848 |
Jul 21, 2010 |
8999736 |
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11249680 |
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11160588 |
Jun 29, 2005 |
7928455 |
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12840848 |
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10604245 |
Jul 4, 2003 |
6987287 |
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11160588 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 33/387 20130101;
H01L 33/647 20130101; H01L 2933/005 20130101; H01L 21/568 20130101;
H01L 33/38 20130101; H01L 2224/48091 20130101; H01L 33/62 20130101;
H01L 33/502 20130101; H01L 33/58 20130101; H01L 2224/19 20130101;
H01L 2224/73265 20130101; H01L 33/54 20130101; H01L 2924/00014
20130101; H01L 2224/32245 20130101; H01L 33/50 20130101; H01L
2224/73267 20130101; H01L 33/44 20130101; H01L 33/46 20130101; H01L
2224/9222 20130101; H01L 2224/04105 20130101; H01L 2933/0066
20130101; H01L 2224/48091 20130101 |
International
Class: |
H01L 33/50 20100101
H01L033/50; H01L 33/46 20100101 H01L033/46; H01L 33/38 20100101
H01L033/38; H01L 33/58 20100101 H01L033/58; H01L 33/44 20100101
H01L033/44; H01L 33/62 20100101 H01L033/62 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 21, 2009 |
TW |
098124681 |
Dec 30, 2009 |
TW |
098146171 |
May 2, 2012 |
TW |
101115716 |
Aug 8, 2012 |
TW |
101128707 |
Claims
1. An optoelectronic element comprising: an optoelectronic unit
having a central line in a top view, a top surface, and a bottom
surface; a first metal layer; a second metal layer formed on the
top surface, and having an extension portion crossing over the
central line and extending to the first metal layer; a conductive
layer covering the first metal layer and the extension portion; and
a transparent structure covering the bottom surface without
covering the top surface.
2. The optoelectronic element of claim 1, wherein the first metal
layer having a portion crossing over the central line and extending
toward the second metal in the top view.
3. The optoelectronic element of claim 1, wherein the transparent
structure has a flat bottom surface.
4. The optoelectronic element of claim 1, further comprising a
passivation layer formed on the extension portion and exposing an
area of the second metal layer.
5. The optoelectronic element of claim 4, further comprising an
optical layer formed on the passivation layer and having a part
overlapping the extension portion.
6. The optoelectronic element of claim 5, wherein the optical layer
comprises a Distributed Bragg Reflector.
7. The optoelectronic element of claim 5, wherein the passivation
layer has a side surface covered by the optical layer.
8. The optoelectronic element of claim 1, wherein the second metal
layer comprises a base portion wider than the extension
portion.
9. The optoelectronic element of claim 1, wherein the conductive
layer directly contacts the first metal layer.
10. The optoelectronic element of claim 1, wherein the transparent
structure comprises a transparent layer and a wavelength-converting
layer.
11. The optoelectronic element of claim 10, wherein the
wavelength-converting layer comprises quantum dot or phosphor.
Description
RELATED APPLICATION
[0001] This application is a continuation application of U.S.
patent application of Ser. No. 13/886,083, filed on May 2, 2013,
which is a continuation-in-part application of U.S. patent
application of Ser. No. 11/674,371, filed on Feb. 13, 2007, which
is a continuation-in-part application of U.S. patent application of
Ser. No. 11/249,680, filed on Oct. 12, 2005, and the contents of
which are incorporated herein by reference in their entireties.
[0002] This application is a continuation-in-part application of
Ser. No. 12/840,848, filed Jul. 21, 2010, which is a
continuation-in-part application of Ser. No. 11/160,588, filed Jun.
29, 2005, which is a continuation-in-part application of Ser. No.
10/604,245, filed Jul. 4, 2003, and claims the right of priority
based on Taiwan application Ser. No. 098124681, filed Jul. 21,
2009, and Taiwan application Ser. No. 098146171, filed Dec. 30,
2009, and the content of which is hereby incorporated by reference
in their entireties.
[0003] This application claims the right of priority based on
Taiwan application Ser. No. 101115716, filed May 2, 2012, and the
content of which is hereby incorporated by reference in its
entirety.
[0004] This application claims the right of priority based on
Taiwan application Ser. No. 101128707, filed Aug. 8, 2012, and the
content of which is hereby incorporated by reference in its
entirety.
BACKGROUND
[0005] 1. Technical Field
[0006] The present disclosure relates to an optoelectronic element,
and more particularly, to an optoelectronic element having a
conductive structure.
[0007] 2. Description of the Related Art
[0008] An optoelectronic element, such as a light-emitting diode
(LED) package, has been applied widely in optical display devices,
traffic signals, data storing devices, communication devices,
illumination devices, and medical apparatuses. Similar to the trend
of small and slim commercial electronic product, the development of
the optoelectronic element also enters into an era of miniature
package. One promising packaging design for semiconductor and
optoelectronic element is the Chip-Level Package (CLP).
[0009] The LED can be further packaged and connected with other
elements to form a light-emitting device. FIG. 15 shows a schematic
view of a conventional light-emitting device structure. A
conventional light-emitting device 150 includes a submount 152 with
a circuit 154; a solder 156 on the submount 152, wherein an LED 151
is adhesively fixed on the submount 152 by the solder 156; and an
electrical-connecting structure 158 electrically connecting the
electrode 155 with the circuit 154. The submount 152 can be a lead
frame or a mounting substrate for circuit design and heat
dissipation of the light-emitting device 150.
SUMMARY OF THE DISCLOSURE
[0010] An optoelectronic element includes an optoelectronic unit, a
first metal layer, a second metal layer, a conductive layer and a
transparent structure. The optoelectronic unit has a central line
in a top view, a top surface, and a bottom surface. The second
metal layer is formed on the top surface, and has an extension
portion crossing over the central line and extending to the first
metal layer. The conductive layer covers the first metal layer and
the extension portion. The transparent structure covers the bottom
surface without covering the top surface.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] The accompanying drawings are included to provide easy
understanding of the application, are incorporated herein and
constitute a part of this specification. The drawings illustrate
embodiments of the application and, together with the description,
serve to illustrate the principles of the application.
[0012] FIGS. 1A-1C illustrate flow charts of a manufacturing
process of optoelectronic elements in accordance with an embodiment
of the present application.
[0013] FIG. 2A illustrates a cross-sectional view of an
optoelectronic element in accordance with an embodiment of the
present application.
[0014] FIG. 2B illustrates a cross-sectional view of the
optoelectronic unit shown in FIG. 2A.
[0015] FIG. 2C illustrates a top view of the optoelectronic element
shown in FIG. 2A.
[0016] FIGS. 3A-3F illustrate flow charts of a manufacturing
process of electroplating an electrode on optoelectronic elements
in accordance with an embodiment of the present application.
[0017] FIG. 4 illustrates a cross-sectional view of an
optoelectronic element in accordance with another embodiment of the
present application.
[0018] FIG. 5 illustrates a cross-sectional view of an
optoelectronic element in accordance with another embodiment of the
present application.
[0019] FIG. 6 illustrates a cross-sectional view of an
optoelectronic element in accordance with another embodiment of the
present application.
[0020] FIG. 7 illustrates a cross-sectional view of an
optoelectronic element in accordance with another embodiment of the
present application.
[0021] FIG. 8 illustrates a cross-sectional view of an
optoelectronic element in accordance with another embodiment of the
present application.
[0022] FIGS. 9A-9C illustrate flow charts of a manufacturing
process of an optoelectronic element in accordance with another
embodiment of the present application.
[0023] FIGS. 10A-10B illustrate flow charts of a manufacturing
process of an optoelectronic element in accordance with another
embodiment of the present application.
[0024] FIG. 11 illustrates a cross-sectional view of an
optoelectronic element in accordance with another embodiment of the
present application.
[0025] FIG. 12 illustrates a cross-sectional view of an
optoelectronic element in accordance with another embodiment of the
present application.
[0026] FIG. 13 illustrates a cross-sectional view of a
light-generating device in accordance with another embodiment of
the present application.
[0027] FIG. 14 illustrates a cross-sectional view of a backlight
module in accordance with another embodiment of the present
application.
[0028] FIG. 15 illustrates a cross-sectional view of a conventional
light-emitting device.
[0029] FIGS. 16A-16C illustrate flow charts of a manufacturing
process of an optoelectronic element in accordance with another
embodiment of the present application.
[0030] FIGS. 17A-17D illustrate flow charts of a manufacturing
process of an optoelectronic element in accordance with another
embodiment of the present application.
[0031] FIGS. 18A-18D illustrate flow charts of a manufacturing
process of an optoelectronic element in accordance with another
embodiment of the present application.
[0032] FIG. 19 illustrates a cross-sectional view of an
optoelectronic element in accordance with another embodiment of the
present application.
[0033] FIGS. 20A-20F illustrate flow charts of a manufacturing
process of an optoelectronic element in accordance with another
embodiment of the present application.
[0034] FIG. 21 illustrates a cross-sectional view of an
optoelectronic element in accordance with another embodiment of the
present application.
[0035] FIG. 22 illustrates a cross-sectional view of an
optoelectronic element in accordance with another embodiment of the
present application.
[0036] FIGS. 23A-23C illustrate flow charts of a manufacturing
process of an optoelectronic element 2300 in accordance with
another embodiment of the present application.
[0037] FIGS. 24A-24D illustrate a manufacturing method of an
optoelectronic element 2400 in accordance with another embodiment
of the present application.
[0038] FIG. 24E illustrates a detailed structure of the
optoelectronic element 2400 in accordance with an embodiment of the
present application.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0039] To better and concisely explain the disclosure, the same
name or the same reference number given or appeared in different
paragraphs or figures along the specification should has the same
or equivalent meanings while it is once defined anywhere of the
disclosure.
[0040] The following shows the description of the embodiments of
the present disclosure in accordance with the drawings.
[0041] FIGS. 1A-1C disclose flow charts of a manufacturing process
of optoelectronic elements 1 in accordance with an embodiment of
the present application. Referring to FIG. 1A, there is a wafer
including a temporary carrier 10; a bonding layer 12 formed on the
temporary carrier 10; and a plurality of optoelectronic units 14
formed on the bonding layer 12. Referring to FIG. 1B, a first
transparent structure 16 is formed on the bonding layer 12 and the
plurality of optoelectronic units 14. The first transparent
structure 16 can cover more than one surface of at least one of the
plurality of optoelectronic units 14. A second transparent
structure 18 is formed on the first transparent structure 16.
Referring to FIG. 1C, the temporary carrier 10 and the bonding
layer 12 are removed, and a plurality of conductive structures 2 is
formed on the surfaces of the plurality of optoelectronic units 14
and the first transparent structure 16. The wafer can be separated
to form the plurality of optoelectronic elements 1.
[0042] The temporary carrier 10 and the second transparent
structure 18 can support the optoelectronic unit 14 and the first
transparent structure 16. The material of the temporary carrier 10
includes conductive material such as Diamond Like Carbon (DLC),
graphite, carbon fiber, Metal Matrix Composite (MMC), Ceramic
Matrix Composite (CMC), Polymer Matrix Composite (PMC), Ni, Cu, Al,
Si, ZnSe, GaAs, SiC, GaP, GaAsP, ZnSe, InP, LiGaO.sub.2,
LiAlO.sub.2, or the combination thereof, or insulating material
such as sapphire, diamond, glass, epoxy, quartz, acryl,
Al.sub.2O.sub.3, ZnO, AlN, or the combination thereof.
[0043] The second transparent structure 18 can be transparent to
the light generated from the optoelectronic unit 14. The material
of the second transparent structure 18 can be transparent material
such as sapphire, diamond, glass, epoxy, quartz, acryl, SiO.sub.x,
Al.sub.2O.sub.3, ZnO, silicone, or the combination thereof. In
addition, the second transparent structure 18 can also be
transparent to the light, like the sunlight, from the environment
in another embodiment. A thickness of the second transparent
structure 18 is about 300 .mu.m to 500 .mu.m.
[0044] The bonding layer 12 can adhesively connect the temporary
carrier 10 with the optoelectronic unit 14, and be easily removed
after the second transparent structure 18 is formed on the first
transparent structure 16. The material of the bonding layer 12 can
be insulating material, UV tape, or thermal release tape. The
insulating material includes but is not limited to benzocyclobutene
(BCB), Su8, epoxy, or spin-on-glass (SOG).
[0045] The first transparent structure 16 covers the optoelectronic
units 14 to fix and support the optoelectronic units 14 and
enhances the mechanical strength of the optoelectronic elements 1.
The first transparent structure 16 can be transparent to the light
generated from the optoelectronic unit 14. The material of the
first transparent structure 16 and the second transparent structure
18 can be the same or different. The coefficient of thermal
expansion (CTE) of the first transparent structure 16 is about 50
ppm/.degree. C..about.400 ppm/.degree. C. The material of the first
transparent structure 16 can be transparent material such as epoxy,
polyimide (PI), BCB, perfluorocyclobutane (PFCB), Su8, acrylic
resin, polymethyl methacrylate (PMMA), polyethylene terephthalate
(PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer,
glass, Al.sub.2O.sub.3, SINR, SOG, or the combination thereof. The
refractive indices of the first transparent structure 16 and the
second transparent structure 18 can be the same or different. A
thickness of the first transparent structure 16 is about 200 .mu.m
to 300 .mu.m. In addition, the first transparent structure 16 can
be transparent to the light from the environment such as the
sunlight as well.
[0046] The optoelectronic unit 14 provides luminous energy,
electric energy, or both, such as the LED or the solar cell. A
thickness of the optoelectronic unit 14 is about 100 .mu.m. When
the optoelectronic unit 14 is the LED for emitting light, the
refractive index of the first transparent structure 16 is larger
than that of the second transparent structure 18 to increase the
probability of extracting the light out of the optoelectronic
element 1. When the optoelectronic unit 14 is the solar cell for
absorbing light, the refractive index of the first transparent
structure 16 is smaller than that of the second transparent
structure 18 to increase the probability of the light entering the
optoelectronic element 1.
[0047] Referring to FIG. 2A which shows a cross-sectional view of
an optoelectronic element 1 in accordance with an embodiment of the
present application, the optoelectronic element 1 includes the
second transparent structure 18; the first transparent structure 16
on the second transparent structure 18; the optoelectronic unit 14
on the first transparent structure 16; and the conductive structure
2 on the optoelectronic unit 14 and the first transparent structure
16. The optoelectronic unit 14 includes a first metal layer 142 and
a second metal layer 144 formed on a first top surface 141; a first
bottom surface 143 opposite to the first top surface 141 and close
to the second transparent structure 18; and more than one lateral
surface 140 between the first top surface 141 and the first bottom
surface 143. The conductive structure 2 includes a first insulating
layer 22 formed on the optoelectronic unit 14 and the first
transparent structure 16 and covering portions of the first metal
layer 142 and the second metal layer 144; a reflective layer 24
formed on the first insulating layer 22; a second insulating layer
26 formed on the first insulating layer 22 and the reflective layer
24 and covering the reflective layer 24; a first opening 212 and a
second opening 214 formed in the first insulating layer 22 and the
second insulating layer 26 to expose the first metal layer 142 and
the second metal layer 144 respectively; and an electrode 28
including a first conductive layer 282 and a second conductive
layer 284 which are formed on the second insulating layer 26, and
in the first opening 212 and the second opening 214 to electrically
connect with the first metal layer 142 and the second metal layer
144 respectively.
[0048] The first insulating layer 22 can electrically isolate the
optoelectronic unit 14 from the reflective layer 24 and protect the
optoelectronic unit 14 from being damaged by the element diffused
from the material of the reflective layer 24. The first transparent
structure 16 includes a second top surface 162 under the first
insulating layer 22 and a second bottom surface 166 close to the
second transparent structure 18. The second top surface 162 is
substantially lower than the first top surface 141. However, the
second top surface 162 includes a slope 164 adjacent to the first
top surface 141. It is better that the slope 164 can be located
over a region of the first top surface 141 between the first and
the second metal layers 142 and 144 and the lateral surface 140.
Moreover, a distance between a portion of the second top surface
162 and the second bottom surface 166 can be the same as that
between the second bottom surface 166 and the first top surface 141
in another embodiment.
[0049] The first insulating layer 22 can be adhesive to the first
transparent structure 16 and/or to the reflective layer 24. The
transparency of the first insulating layer 22 to the light
generated from the optoelectronic unit 14 and/or from the
environment is higher than 85%. The CTE of the first insulating
layer 22 is smaller than that of the first transparent structure
16. The CTE of the first insulating layer 22 can be between that of
the first transparent structure 16 and the reflective layer 24
preferably. The CTE of the first insulating layer 22 is about 3
ppm/.degree. C. to 200 ppm/.degree. C., preferably 20 ppm/.degree.
C. to 70 ppm/.degree. C. The material of the first insulating layer
22 can be the same as or different from that of the first
transparent structure 16. The material of the first insulating
layer 22 can be photoresist material for forming the openings so
the first insulating layer 22 needs to be cured in the lithography
process. The curing temperature of the first insulating layer 22 is
not more than 350.degree. C. to avoid damaging the first
transparent structure 16 in high temperature. The photoresist
material includes but is not limited to AL-polymer, BCB, SINR, Su8,
or SOG. The first insulating layer 22 can include a rough surface
with a roughness higher than that of the first top surface 141. A
thickness of the first insulating layer 22 is substantially
constant, for example, about 2 .mu.m to 3 .mu.m.
[0050] The reflective layer 24 can reflect the light generated from
the optoelectronic unit 14 or from the environment. A thickness of
the reflective layer 24 is substantially constant, for example,
about 1 .mu.m to 3 .mu.m. The reflective layer 24 overlaps portions
of the first metal layer 142 and the second metal layer 144. The
reflective layer 24 can further include a plurality of sub-layers
(not shown). The CTE of the reflective layer 24 is about 5
ppm/.degree. C. to 25 ppm/.degree. C. The reflective layer 24 can
have a reflectivity of 70% or above to the light generated from the
optoelectronic unit 14 and/or from the environment. The material of
the reflective layer 24 includes but is not limited to metal
material such as Cu, Al, Sn, Au, Ag, Ti, Ni, Ag--Ti, Ni--Sn, Au
alloy, Ni--Ag, Ti--Al, and so on. The reflective layer 24 can
include a rough surface with a roughness higher than that of the
first top surface 141.
[0051] The second insulating layer 26 can electrically isolate the
first conductive layer 282 and the second conductive layer 284 from
the reflective layer 24, and protect the reflective layer 24 from
being damaged by the first conductive layer 282 and the second
conductive layer 284. The second insulating layer 26 can fix the
reflective layer 24 and enhances the mechanical strength of the
conductive structure 2 as well. The material of the second
insulating layer 26 can be the same as and/or different from that
of the first insulating layer 22. The material of the second
insulating layer 26 includes but is not limited to photoresist
material such as AL-polymer, BCB, SINR, Su8, SOG, PI, or DLC. The
second insulating layer 26 can include a rough surface with a
roughness higher than that of the first top surface 141. A
thickness of the second insulating layer 26 is substantially
constant, for example, about 4 .mu.m to 5 .mu.m.
[0052] The electrode 28 can be integrally formed by evaporation or
electroplating. The ratio of the top surface area of the electrode
28 to that of the second transparent structure 18 is not smaller
than 50%. The first conductive and second conductive layers 282 and
284 are for receiving external voltage. The material of the first
conductive and second conductive layers 282 and 284 can be metal
material. The metal material includes but is not limited to Cu, Sn,
Au, Ni, Ti, Pb, Cu--Sn, Cu--Zn, Cu--Cd, Sn--Pb--Sb, Sn--Pb--Zn,
Ni--Sn, Ni--Co, Au alloy, Au--Cu--Ni--Au, the combination thereof,
and so on. The first conductive layer 282 and/or the second
conductive layer 284 can include a plurality of sub-layers (not
shown). The first conductive layer 282 and/or the second conductive
layer 284 can have a reflectivity of 70% or above to the light
generated from the optoelectronic unit 14 and/or from the
environment. A thickness of the first conductive layer 282 is a
substantially constant, for example, about 12 .mu.m. A thickness of
the second conductive layer 284 is substantially constant, for
example, about 12 .mu.m. The ratio of the top surface area of the
first conductive layer 282 and the second conductive layer 284 to
the area of the second bottom surface 166 is more than 50%.
[0053] The optoelectronic unit 14 can be an LED including a light
emitting structure 145, a first dielectric layer 149a, a
passivation layer 147, a first bonding pad 146, a second bonding
pad 148, the first metal layer 142, the second metal layer 144, and
a second dielectric layer 149b, as FIG. 2B shows. The light
emitting structure 145 includes a substrate 145a, a first
conductive type layer 145b, an active layer 145c, and a second
conductive type layer 145d. The active layer 145c is disposed on
the first conductive type layer 145b and is a light emitting layer.
The second conductive type layer 145d is disposed on the active
layer 145c. The first bonding pad 146 is disposed on the light
emitting structure 145 and is electrically connected to the first
conductive layer 145b. The second bonding pad 148 is disposed on
the light emitting structure 145 and is electrically connected to
the second conductive type layer 145d. The passivation layer 147 is
disposed on the light emitting structure 145 and isolates the first
bonding pad 146 from the active layer 145c and the second
conductive type layer 145d. The first dielectric layer 149a is
disposed on the light emitting structure 145. The first metal layer
142 is disposed on the light emitting structure 145 and is
electrically connected to the first conductive type layer 145b. A
portion of the first metal layer 142 is disposed on the first
dielectric layer 149a. The second metal layer 144 is disposed on
the light emitting structure 145 and is electrically connected to
the second conductive type layer 145d. A portion of the second
metal layer 144 is disposed on the first dielectric layer 149a. The
second dielectric layer 149b is disposed on the first dielectric
layer 149a. The first dielectric layer 149a and the second
dielectric layer 149b electrically isolate the first metal layer
142 from the second metal layer 144. A portion of the first
dielectric layer 149a is a transparent layer, and a surface of the
first dielectric layer 149a contacting the first metal layer 142
and/or the second metal layer 144 is for reflecting the light
generated from the light emitting structure 145. The first
dielectric layer 149a can include a reflective structure in another
embodiment. The reflective structure includes distributed bragg
reflector (DBR) and/or a reflective film. The reflective film can
includes metal material such as Cu, Al, Sn, Au, Ag, Ti, Ni, Ag--Ti,
Ni--Sn, Au alloy, Ni--Ag, Ti--Al, and so on.
[0054] There are a first distance d1 between the first bonding pad
146 and the second bonding pad 148, a second distance d2 between
the first metal layer 142 and the second metal layer 144, and a
third distance d3 between the first conductive layer 282 and the
second conductive layer 284, as FIG. 2B shows. The first distance
d1 is larger than the second distance d2 and the third distance d3.
The second distance d2 and the third distance d3 can be the same or
difference. The second distance d2 is larger than the third
distance d3 in an embodiment. The second distance d2 can also be
smaller than the third distance d3 in another embodiment. The third
distance d3 is about 100 .mu.m to 300 .mu.m. The second transparent
structure 18 contains a first width w1 and the optoelectronic unit
14 contains a second width w2. The ratio of the first width w1 to
the second width w2 is about 1.5 to 3, preferably 2 to 2.5.
[0055] Referring to FIG. 2C which shows a top view of the
optoelectronic element 1 shown in FIG. 2A, the first conductive
layer 282 contains a truncated corner 286 at a side far from the
second conductive layer 284. There is a fourth distance d4 between
the first opening 212 and the reflective layer 24 that is about 25
.mu.m to 75 .mu.m.
[0056] The optoelectronic element 1 can be bonded to a submount
through an adhesive material in another embodiment. The adhesive
material can be metal material, transparent material, or an
anisotropic conductive film. The metal material includes but is not
limited to Cu, Sn, Au, Ni, Ti, Pb, Cu--Sn, Cu--Zn, Cu--Cd,
Sn--Pb--Sb, Sn--Pb--Zn, Ni--Sn, Ni--Co, Au alloy, Au--Cu--Ni--Au,
or the combination thereof. The transparent material includes but
is not limited to BCB, Sub, epoxy, or SOG.
[0057] FIGS. 3A-3F disclose flow charts of a manufacturing process
of electroplating the electrode 28 on the optoelectronic unit 14.
Referring to FIG. 3A, a seed layer 30 is formed on the
optoelectronic units 14 and the first transparent structure 16. A
first photoresist 32 is formed on the seed layer 30 to expose
portions of the seed layer 30, as FIG. 3B shows. An electroplating
layer 34 is electroplated on the portions of the seed layer 30
where the first photoresist 32 does not cover, as FIG. 3C shows.
Referring to FIG. 3D, the first photoresist 32 is removed to expose
other portions of the seed layer 30. A second photoresist 36 is
formed on the electroplating layer 34. Then, the exposed portions
of the seed layer 30 are removed, as FIG. 3E shows. The second
photoresist 36 is removed to expose the electroplating layer 34 for
forming the electrode 28, referring to FIG. 3F.
[0058] Referring to FIG. 4 which shows a cross-sectional view of an
optoelectronic element 4 in accordance with another embodiment of
the present application, the optoelectronic element 4 is similar to
the optoelectronic element 1 and further includes a recess 40
formed in the second transparent structure 18 such that the second
transparent structure 18, as an optical element, can process the
light generated from the optoelectronic unit 14 or from the
environment. The recess 40 can be further formed in the first
transparent structure 16. The shape of the recess 40 can be
triangle in the cross-sectional view in this embodiment.
[0059] Referring to FIG. 5, the second transparent structure 18 of
an optoelectronic element 5 can be trapezoid in another embodiment.
The second transparent structure 18 further includes a third bottom
surface 182. The third bottom surface 182 can be a rough surface
with a roughness higher than that of the first top surface 141, or
a flat surface. The shape of the second transparent structure 18
includes but is not limited to triangle, semicircle, quarter
circle, trapezoid, pentagon, or rectangle in the cross-sectional
view. The first transparent structure 16 can also include the same
or different shape of the second transparent structure 18. The
second bottom surface 166 can also be a rough surface with a
roughness higher than that of the first top surface 141, or a flat
surface in another embodiment.
[0060] An optoelectronic element 6 is similar to the optoelectronic
element 5 and further includes a mirror 60 formed under the third
bottom surface 182, as FIG. 6 shows. The mirror 60 can reflect the
light generated from the optoelectronic unit 14 or from the
environment. Referring to FIG. 7, an optoelectronic element 7
includes the optoelectronic unit 14, the conductive structure 2,
the first transparent structure 16, and the second transparent
structure 18. The second transparent structure 18 contains a first
side 184 which is not parallel to the first top surface 141 and a
mirror 70 is formed under the first side 184 to reflect light
generated from the optoelectronic unit 14 or from the environment,
in another embodiment. The first side 184 can be parabolic curve,
arc, or bevel to the first top surface 141 in the cross-sectional
view, for example. In another embodiment, an optoelectronic element
8 is similar to the optoelectronic element 7 and the first
transparent structure 16 further includes a second side 168 which
is not parallel to the first top surface 141, as FIG. 8 shows. A
mirror 80 is formed under the first side 184 and the second side
168 to reflect light generated from the optoelectronic unit 14 or
from the environment.
[0061] FIGS. 9A-9C disclose flow charts of a manufacturing process
of an optoelectronic element 9 in accordance with another
embodiment of the present application. Referring to FIGS. 9A-9B,
the optoelectronic unit 14 and the first transparent structure 16
are located on the second transparent structure 18. The passivation
layer 147 is formed on the first top surface 141 and exposes the
first metal layer 142 and the second metal layer 144, wherein the
passivation layer 147 can cover portions of the first metal layer
142 and the second metal layer 144. In another embodiment, the
passivation layer 147 can expose all the first metal layer 142 and
the second metal layer 144. Further, the passivation layer 147 can
expose a portion of the first top surface 141. An optical layer 90
is formed on the optoelectronic unit 14 and the first transparent
structure 16. The optical layer 90 covers at least portions of the
optoelectronic unit 14 and the first transparent structure 16 and
surrounds the first metal layer 142 and the second metal layer 144.
Referring to FIG. 9C, a portion of the optical layer 90 is removed
to form the first opening 212 and the second opening 214 that
expose the first metal layer 142 and the second metal layer 144.
The first conductive layer 282 and the second conductive layer 284
are formed on the optical layer 90 and in the first opening 212 and
the second opening 214, wherein the first conductive layer 282 and
the second conductive layer 284 are electrically connected with the
first metal layer 142 and the second metal layer 144 respectively
to form the optoelectronic element 9. The optical layer 90 can
electrically insulate the first conductive layer 282 from the
second conductive layer 284. The reflectivity of the optical layer
90 is at least 50% to the light generated from the optoelectronic
unit 14. The optical layer 90 can be a single-layer structure.
Optionally, the optical layer 90 includes a diffusing surface 92
far from the first conductive layer 282. The diffusing surface 92
includes a plurality of particles diffusing the light generated
from the optoelectronic unit 14. The diffusion is a phenomenon that
light emitted to a rough surface of an object can be reflected
disorderly. In another embodiment, the optical layer 90 can include
a plurality of insulating layers stacked to form a Distributed
Bragg Reflector (DBR). The thickness of the optical layer 90 is
about 4 .mu.m to 20 .mu.m, preferably 5 .mu.m to 10 .mu.m. The
material of the optical layer 90 can be epoxy, SiO.sub.x,
Al.sub.2O.sub.3, TiO.sub.2, silicone, resin, or the combination
thereof. The material of the particles can be Al.sub.2O.sub.3,
TiO.sub.2, silicone, or the combination thereof. A method of
forming the optical layer 90 includes spin coating, screen
printing, or stencil printing. A method of removing the optical
layer 90 includes etching. The optical layer 90 can provide
functions of diffusion, reflection, and insulation so the amount
and cost of diffusing material, reflective material, and insulating
material can be reduced, and the damage caused by the difference of
the material characteristic, such as coefficient of thermal
expansion or mechanical strength, can be avoided. Therefore, the
yield can be enhanced. Furthermore, the optical layer 90 can
prevent the moisture from entering the optoelectronic unit 14 so
the reliability is improved. The first conductive layer 282
includes a first plug region 281 above the first metal layer 142
and a first extended region 283 overlapping a portion of the
optical layer 90, wherein the distance between the first plug
region 281 and the first top surface 141 might be smaller than that
between the first extended region 283 and the first top surface
141. The distance between the first plug region 281 and the first
top surface 141 is smaller than that between the top surface of the
optical layer 90 and the first top surface 141 in another
embodiment. The top surface of the second conductive layer 284
includes a second plug region 285 above the second metal layer 144
and a second extended region 287 overlapping a portion of the
optical layer 90, wherein the distance between the second plug
region 285 and the first top surface 141 is smaller than that
between the second extended region 287 and the first top surface
141. The distance between the second plug region 285 and the first
top surface 141 is smaller than that between the top surface of the
optical layer 90 and the first top surface 141 in another
embodiment. Furthermore, there might be recesses 288/289 formed
between the optical layer 90 and the first metal layer 142/the
second metal layer 144 so the first conductive layer 282 and the
second conductive layer 284 can further fill into the recesses
288/289 to enhance the adhesion between the first conductive layer
282/the second conductive layer 284 and the optical layer 90. The
recesses are formed when a portion of the optical layer 90 is
removed to expose the first metal layer 142 and the second metal
layer 144. The method of removing the optical layer 90 can be wet
etching.
[0062] FIGS. 10A-10B disclose flow charts of a manufacturing
process of an optoelectronic element 100 in accordance with another
embodiment of the present application. Referring to FIG. 10A, the
optoelectronic unit 14 and the first transparent structure 16 are
located on the second transparent structure 18. The first
insulating layer 22 is formed on the optoelectronic unit 14 and the
first transparent structure 16, covers at least portions of the
optoelectronic unit 14 and the first transparent structure 16, and
surrounds the first metal layer 142 and the second metal layer 144.
The reflective layer 24 is formed on the first insulating layer 22
and the second insulating layer 26 is formed on the reflective
layer 24. Referring to FIG. 10B, portions of the first insulating
layer 22, the second insulating layer 26, and the reflective layer
24 are removed to form the first opening 212 and the second opening
214 and expose the first metal layer 142 and the second metal layer
144. The first conductive layer 282 and the second conductive layer
284 are formed on the second insulating layer 26 and in the first
opening 212 and the second opening 214, wherein the first
conductive layer 282 and the second conductive layer 284 are
electrically connected with the first metal layer 142 and the
second metal layer 144 respectively to form the optoelectronic
element 100. A portion of the reflective layer 24 between the first
insulating layer 22 and the second insulating layer 26 is between
the first metal layer 142 and the second metal layer 144. The
probability of reflecting the light generated from the
optoelectronic unit 14 is therefore enhanced to increase
light-emitting efficiency. Furthermore, the moisture can be
prevented from entering the optoelectronic unit 14 so the
reliability is enhanced. The reflective layer 24 can be
electrically connected with the electrode 28 and/or the first metal
layer 142 and the second metal layer 144.
[0063] FIG. 11 illustrates a cross-sectional view of an
optoelectronic element 110 in accordance with another embodiment of
the present application. The optoelectronic element 110 includes
the first conductive layer 282, the second conductive layer 284,
the optoelectronic unit 14, and the first transparent structure 16
on the second transparent structure 18. The first transparent
structure 16 includes a first transparent layer 161 covering the
optoelectronic unit 14; a second transparent layer 163 covering the
first transparent layer 161; a third transparent layer 165 covering
the second transparent layer 163; a first wavelength-converting
layer 112 located between the first transparent layer 161 and the
second transparent layer 163; and a second wavelength-converting
layer 114 located between the second transparent layer 163 and the
third transparent layer 165. The first wavelength-converting layer
112 can be excited by the light generated from the optoelectronic
unit 14 and emit light having a first wavelength. The second
wavelength-converting layer 114 can be excited by the light
generated from the optoelectronic unit 14 and emit light having a
second wavelength. The light generated from the optoelectronic unit
14 has a third wavelength. The third wavelength is smaller than the
first wavelength and the second wavelength, and the first
wavelength is larger than the second wavelength. The bandgap of the
first wavelength is smaller than the bandgap of the wavelength
which can be absorbed by the second wavelength-converting layer 114
so the absorption of the light having the first wavelength by the
second wavelength-converting layer 114 and the loss of conversion
of the light having the first wavelength can be reduced. The
light-emitting efficiency of the optoelectronic element 110 is
therefore increased. The first wavelength-converting layer 112
and/or the second wavelength-converting layer 114 can absorb the
light generated from the optoelectronic unit 14 and emit the
excited light, and diffuse the light generated from the
optoelectronic unit 14 and the excited light generated from the
first wavelength-converting layer 112 and/or the second
wavelength-converting layer 114. The structure of the first
wavelength-converting layer 112 and/or the second
wavelength-converting layer 114 can include quantum dot. The
material of the first wavelength-converting layer 112 and/or the
second wavelength-converting layer 114 includes a semiconductor
material or phosphor. The phosphor includes yttrium aluminum garnet
(YAG), silicate garnet, vanadate garnet, alkaline earth metal
silicate, alkaline earth metal sulfides, alkaline earth metal
selenides, alkaline earth metal thiogallates, metal nitrides, metal
oxo-nitrides, mixed molybdate-tungstate, mixed oxides, mixed glass
phosphors, or the combination thereof. The semiconductor material
contains more than one element selected from a group consisting of
Ga, Al, In, As, P, N, Zn, Cd, and Se.
[0064] FIG. 12 illustrates a cross-sectional view of an
optoelectronic element 120 in accordance with another embodiment of
the present application. The optoelectronic element 120 includes
the first conductive layer 282, the second conductive layer 284,
the optoelectronic unit 14, the first transparent structure 16 on
the second transparent structure 18, and a window layer 122 on a
side of the second transparent structure 18 opposite to the first
transparent structure 16. The refraction index of the window layer
122 is between that of the second transparent structure 18 and the
environment for reducing the probability of the total internal
reflection at the interface of the second transparent structure 18
and the environment. The refraction index of the window layer 122
is about larger than 1 and/or smaller than 2, preferably between
1.1 and 1.4. The material of the window layer 122 can be formed on
the second transparent structure 18 and proceeds with the reflow
process to form the window layer 122. The window layer 122 can
perform as lens to process the light from the optoelectronic unit
14. The shape of the window layer 122 includes but is not limited
to triangle, semicircle, quarter circle, trapezoid, pentagon, or
rectangle in the cross-sectional view. The material of the window
layer 122 can be epoxy, spin-on-glass (SOG), SiO.sub.x, silicone,
polymethyl methacrylate (PMMA), or the combination thereof.
[0065] FIGS. 16A-16C disclose flow charts of a manufacturing
process of an optoelectronic element 1600 in accordance with
another embodiment of the present application. FIG. 16A is a top
view and FIGS. 16B and 16C are cross-sectional views of the
optoelectronic element 1600. Referring to FIG. 16A, the first metal
layer 142 includes a first extension part 142a and/or the second
metal layer 144 includes a second extension part 144a. A portion of
the passivation layer 147 of the optoelectronic unit 14 is removed
to expose the first metal layer 142 and the first extension part
142a and/or the second metal layer 144 and the second extension
part 144a. The optical layer 90 is formed on the optoelectronic
unit 14 and a first transparent structure 16 as shown in FIG. 16B.
A portion of the optical layer 90 is removed to expose the first
metal layer 142 and the first extension part 142a and/or the second
metal layer 144 and the second extension part 144a. The first
conductive layer 282 and the second conductive layer 284 are formed
on the optical layer 90 and the optoelectronic unit 14 to form the
optoelectronic element 1600, wherein the first conductive layer 282
and the second conductive layer 284 are electrically connected with
the first metal layer 142 and the second metal layer 144
respectively, as shown in FIG. 16C. The first metal layer 142 and
the second metal layer 144 of the optoelectronic element 1600
include the first extension part 142a and the second extension part
144a to enhance the current spreading and the light-emitting
efficiency of the optoelectronic unit 14 is improved. The first
conductive layer 282 contacts the first extension part 142a and/or
the second conductive layer 284 contacts the second extension part
144a to increase the contact area between the first conductive
layer 282 and the first metal layer 142 and/or between the second
conductive layer 284 and the second metal layer 144. The path of
heat dissipation and current conduction is increased and the
efficiency of heat dissipation is therefore improved.
[0066] FIGS. 17A-17D disclose flow charts of a manufacturing
process of an optoelectronic element 1700 in accordance with
another embodiment of the present application. FIGS. 17A, 17B, and
17C are top views and FIG. 17D is a cross-sectional view of the
optoelectronic element 1700. Referring to FIG. 17A, a portion of
the passivation layer 147 of the optoelectronic unit 14 is removed
to expose the first metal layer 142, the second metal layer 144,
and the second extension part 144a. A first contact layer 170 is
formed on the first transparent structure 16 and includes a
connective part 170a extending toward the optoelectronic unit 14
and electrically connected with the first metal layer 142. The
connective part 170a directly contacts with the first metal layer
142. An optical layer 172 is formed on the first contact layer 170
and a first transparent structure 16 and exposes a portion of the
first contact layer 170, as shown in FIG. 17B. As shown in FIGS.
17C and 17D, the first conductive layer 282 is formed on the
optical layer 172 and the first contact layer 170. The second
conductive layer 284 is formed on the optical layer 172, the second
metal layer 144, and the second extension part 144a, and is
electrically connected with the second metal layer 144 and the
second extension part 144a to form the optoelectronic element 1700,
wherein the second conductive layer 284 is electrically insulated
from the first contact layer 170. The second metal layer 144 of the
optoelectronic unit 14 includes the second extension part 144a to
enhance the current spreading and the light-emitting efficiency of
the optoelectronic unit 14 is improved. The second conductive layer
284 contacts with the second extension part 144a to increase the
contact area between the second conductive layer 284 and the second
metal layer 144. The path of heat dissipation and current
conduction is increased and the efficiency of heat dissipation is
therefore improved. The optical layer 172 covering the first
contact layer 170 electrically insulates the second conductive
layer 284 and the first metal layer 142 so the second conductive
layer 284 can extend above the first metal layer 142 to increase
the upper surface area of the second conductive layer 284. Path of
heat dissipation and current conduction of the optoelectronic
element 1700 is therefore increased to improve efficiency. When the
upper surface areas of the first conductive layer 282 and the
second conductive layer 284 are different, for instance the upper
surface area of the second conductive layer 284 is larger than that
of the first conductive layer 282, it is beneficial to the
subsequent process such as alignment so the yield is increased. The
first contact layer 170 can reflect the light generated from the
optoelectronic unit 14 to increase the light extraction efficiency
of the optoelectronic element 1700. The material of the first
contact layer 170 can be the same as that of the first metal layer
or the reflective layer.
[0067] FIGS. 18A-18D disclose flow charts of a manufacturing
process of an optoelectronic element 1800 in accordance with
another embodiment of the present application. FIGS. 18A, 18B, and
18C are top views and FIG. 18D is a cross-sectional view of the
optoelectronic element 1800. Referring to FIG. 18A, a portion of
the passivation layer 147 of the optoelectronic unit 14 is removed
to expose the first metal layer 142, the second metal layer 144,
and the second extension part 144a. The first contact layer 170 is
formed on the first transparent structure 16 and includes the
connective part 170a extending toward the optoelectronic unit 14
and electrically connected with the first metal layer 142. A second
contact layer 1802 is formed on the first transparent structure 16
and the passivation layer 147 and electrically connected with the
second metal layer 144 and/or the second extension part 144a,
wherein the first contact layer 170 is separated from the second
contact layer 1802, as shown in FIG. 18B. A first isolating layer
1804 is formed on the first contact layer 170 and the second
contact layer 1802 to form the optoelectronic element 1800, as
shown in FIG. 18C. Referring to FIGS. 18A and 18D, the second metal
layer 144 of the optoelectronic unit 14 includes the second
extension part 144a to enhance the current spreading of the
optoelectronic unit 14 and the light-emitting efficiency is
improved. The second contact layer 1802 contacts with the second
extension part 144a to increase the contact area between the second
contact layer 1802 and the second metal layer 144. The path of heat
dissipation and current conduction is increased and the efficiency
of heat dissipation is therefore improved. The dimension such as
length and width of the first isolating layer 1804 covering the
first contact layer 170 and the second contact layer 1802 can be
adjusted to change the exposed top surface areas of the first
contact layer 170 and the second contact layer 1802 in another
embodiment. The exposed top surface areas of the first contact
layer 170 and the second contact layer 1802 can be the same or
different. When the exposed upper surface areas of the first
contact layer 170 and the second contact layer 1802 are different,
for instance the exposed upper surface area of the second contact
layer 1802 is larger than that of the first contact layer 170, it
is beneficial to the subsequent process such as alignment so the
yield is increased. Referring to FIG. 18D, the first isolating
layer 1804 can be further formed between the first contact layer
170 and the second contact layer 1802 to electrically insulate them
so the probability of short is decreased and the yield is
increased. The material of the second contact layer 1802 can be the
same as that of the first metal layer. The material of the first
isolating layer 1804 can be the same as that of the first
insulating layer or the optical layer.
[0068] FIG. 19 illustrates a cross-sectional view of an
optoelectronic element 1900 in accordance with another embodiment
of the present application. The optoelectronic element 1900
includes the first conductive layer 282, the second conductive
layer 284, the optoelectronic unit 14, and the first transparent
structure 16 on the second transparent structure 18, wherein the
second transparent structure 18 includes a bevel 186 between the
bottom surface and the lateral surface of the second transparent
structure 18 to process the light generated from the optoelectronic
unit 14, for instance refracting or reflecting the light generated
from the optoelectronic unit 14. The optoelectronic element 1900
further includes a first covering layer 1902 covering the second
transparent structure 18; a second covering layer 1906 covering the
first covering layer 1902; and a third wavelength-converting layer
1904 located between the first covering layer 1902 and the second
covering layer 1906. The light from the optoelectronic unit 14 can
be diffused by the third wavelength-converting layer 1904 to return
to the optoelectronic unit 14. The diffused light can encounter
total reflection at the interface between the second transparent
structure 18 and the first covering layer 1902 so the absorption of
the diffused light emitted to optoelectronic unit 14 is decreased
and the light extraction efficiency of the optoelectronic element
1900 is increased. The third wavelength-converting layer 1904
includes wavelength-converting particles. A structure of the
wavelength-converting particle can include quantum dot. The
material of the wavelength-converting particle includes phosphor or
a semiconductor material. The phosphor includes yttrium aluminum
garnet (YAG), silicate garnet, vanadate garnet, alkaline earth
metal silicate, alkaline earth metal sulfides, alkaline earth metal
selenides, alkaline earth metal thiogallates, metal nitrides, metal
oxo-nitrides, mixed molybdate-tungstate, mixed oxides, mixed glass
phosphors, or the combination thereof. The semiconductor material
contains more than one element selected from a group consisting of
Ga, Al, In, As, P, N, Zn, Cd, and Se.
[0069] FIGS. 20A-20F disclose flow charts of a manufacturing
process of an optoelectronic element 2000 in accordance with
another embodiment of the present application. Referring to FIG.
20A, the bonding layer 12 is formed on the temporary carrier 10.
The optoelectronic unit 14 is formed on the bonding layer 12,
wherein the optoelectronic unit 14 includes the first metal layer
142 and the second metal layer 144. First lead structures 2002 are
formed on the bonding layer 12 and separated from the
optoelectronic unit 14, wherein the first lead structures 2002 can
be located on the same side or the different sides of the
optoelectronic unit 14. Referring to FIG. 20B, a first covering
structure 2004 is formed on the bonding layer 12 and the
optoelectronic unit 14 to cover the optoelectronic unit 14 and the
first lead structures 2002, and is between the optoelectronic unit
14 and the first lead structures 2002. Referring to FIG. 20C, a
portion of the first covering structure 2004 is removed to expose
the first metal layer 142, the second metal layer 144, and the
first lead structures 2002. A first isolating layer 2006 is formed
on the first covering structure 2003 and exposes the first metal
layer 142, the second metal layer 144, and the first lead
structures 2002. Second lead structures 2008 are formed on the
first isolating layer 2006, and electrically connect the first
metal layer 142 and the second metal layer 144 with the first lead
structures 2002 respectively, as shown in FIG. 20D. The first
transparent structure 16 is formed on the first isolating layer
2006 and the second lead structures 2008, wherein the first
transparent structure 16 includes a first wavelength-converting
layer 2010 on the route where the light generated from the
optoelectronic unit 14 passes. The second transparent structure 18
is formed on the first transparent structure 16, as shown in FIG.
20E. Referring to the FIG. 20 F, the temporary carrier 10 and the
bonding layer 12 are removed. A second isolating layer 2012 is
formed under the first covering structure 2004 and the
optoelectronic unit 14, and exposes the first lead structures 2002
and a first bottom surface 143. A first conductive layer 2014 and a
second conductive layer 2016 are formed under the second isolating
layer 2012 to form the optoelectronic element 2000, wherein the
first conductive layer 2014 and the second conductive layer 2016
are electrically connected with the first lead structures 2002
respectively. The second conductive layer 2016 can be direct
contact with the first bottom surface 143 to improve the heat
dissipation of the optoelectronic unit 14 and increasing the heat
dissipation efficiency of the optoelectronic element 2000.
[0070] The first lead structures 2002 can conduct current and
electrically connect the first metal layer 142 with the first
conductive layer 2014 and the second metal layer 144 with the
second conductive layer 2016. The reflectivity of the first lead
structures 2002 is 70% to the light from the optoelectronic unit
14. The material of the first lead structures 2002 can be the same
as that of the first conductive layer and the reflective layer. The
first covering structure 2004 covers the optoelectronic unit 14 to
fix and support the optoelectronic unit 14, enhances the mechanical
strength of the optoelectronic element 2000, and electrically
isolates the first lead structures 2002 and the optoelectronic unit
14. The first covering structure 2004 can be transparent to the
light generated from the optoelectronic unit 14, and the material
of the first covering structure 2004 can be different from or the
same as that of the second transparent structure 18. The first
isolating layer 2006 can isolate the first lead structures 2002
from the optoelectronic unit 14 and the material of the first
isolating layer 2006 can be the same as that of the first
insulating layer. The second isolating layer 2012 can isolate the
first conductive layer 2014 from the second conductive layer 2016
and reflect or diffuse the light generated from the optoelectronic
unit 14. The material of the second conductive layer 2016 can be
the same as that of the first insulating layer or the optical
layer. The second lead structures 2008 can conduct current, and
electrically connect the first metal layer 142 with the first
conductive layer 2014 and the second metal layer 144 with the
second conductive layer 2016. The material of the second lead
structures 2008 can be the same as that of the first conductive
layer. Referring to FIG. 21, the shape of the second transparent
structure 18 of an optoelectronic element 2100 can include arc in a
cross-sectional view in another embodiment. In another embodiment,
the second transparent structure of an optoelectronic element 2200
can be trapezoid in a cross-sectional view, as shown in FIG. 22.
The shape of the second transparent structure 18 can be adjusted to
change the optical field of optoelectronic element based on the
need of the application. The shape of the second transparent
structure 18 includes but is not limited to triangle, quarter
circle, trapezoid, pentagon, or rectangle in the cross-sectional
view. The shape of the first transparent structure 16 can be the
same as or different from that of the second transparent structure
18.
[0071] FIGS. 23A-23C disclose flow charts of a manufacturing
process of an optoelectronic element 2300 in accordance with
another embodiment of the present application. Referring to FIG.
23A, there is a wafer including the temporary carrier 10; the
bonding layer 12 formed on the temporary carrier 10; the plurality
of optoelectronic units 14 formed on the bonding layer 12; the
first transparent structure 16 formed on the bonding layer 12 and
the plurality of optoelectronic units 14; and the second
transparent structure 18 formed on the first transparent structure
16, wherein there is a plurality of intervals 2302 between each two
of the optoelectronic units 14. Referring to FIG. 23B, a fourth
wavelength-converting layer 2304 is formed on the plurality of
optoelectronic units 14, wherein the fourth wavelength-converting
layer 2304 covers at least two sides of each optoelectronic unit
14. A transparent carrier 2306 is formed on the fourth
wavelength-converting layer 2304. The transparent carrier 2306 can
be precut to form a cavity 2308 between any two adjacent
optoelectronic units 14. It benefits the subsequent process such as
cutting. The shape of the cavity 2308 can be V shape in a
cross-sectional view in another embodiment. Referring to FIG. 23C,
the temporary carrier 10 and the bonding layer 12 are removed, and
a plurality of conductive layers 282/284 is formed under the
surfaces of the plurality of optoelectronic units 14 and the first
transparent structure 16. The wafer can be cut along the cavities
2308 to form the plurality of optoelectronic elements 2300. Because
there are the cavities 2308 formed on the transparent carrier 2306,
the wafer can be separated easier. The material and the structure
of the fourth wavelength-converting layer 2304 can be the same as
that of the third wavelength-converting layer 1904. The material of
the transparent carrier 2306 can be the same as that of the second
transparent structure 18.
[0072] FIGS. 24A-24D disclose a manufacturing method of an
optoelectronic element 2400 in accordance with another embodiment
of the present application. This embodiment is a variation of the
embodiment shown in FIGS. 23A-23C. Referring to FIG. 24A, the
manufacturing method includes the steps of providing a temporary
carrier 10; forming a bonding layer 12 on the temporary carrier 10;
and attaching a plurality of optoelectronic units 14' on temporary
carrier 10 by the bonding layer 12. Then, a first transparent
structure 16 is formed on the bonding layer 12 and covering the
plurality of optoelectronic units 14'; and a second transparent
structure 18 is formed on the first transparent structure 16.
Referring to FIG. 24B, the temporary carrier 10 and the bonding
layer 12 are removed after the second transparent structure 18 is
formed, and a plurality of conductive structures 2' is formed on
the surfaces of the plurality of optoelectronic units 14' uncovered
by the first transparent structure 16 and the surface 162' of the
first transparent structure 16. A support 2410, such as a tape, is
adhered to the conductive structures 2' and/or the first
transparent structure 16. The first transparent structure 16 and
the second transparent structure 18 is then cut by a cut blade in
the region between two adjacent optoelectronic units 14' to form
cavities 2408 between two adjacent optoelectronic units 14'. In one
example, the cut blade cuts through the second transparent
structure 18 and the first transparent structure 16 such that the
inclined sidewalls 2407 approximately reach the bottom surface of
the first transparent structure 16, i.e., the surface of the first
transparent structure 16 on which the conductive structures 2' is
formed. In another example, the cut blade cuts through the second
transparent structure 18 and cut into a portion of the first
transparent structure 16. A portion of the first transparent
structure 16 which is not cut is kept to connect two adjacent
optoelectronic elements 14', and may be separated with the
wavelength-converting layer 2404 by a breaking step described
below. Each cavity 2408 has sidewalls 2407, and in the embodiment,
when the sidewalls 2407 are inclined, the shape of each cavity 2408
can be V shape in a cross-sectional view so the outer profile of
the stack of the first transparent structure 16 and the second
transparent structure 18 is substantially a trapezoid in a
cross-sectional view for enhancing light extraction. Referring to
FIG. 24C, a wavelength-converting layer 2404 is conformably coated
along the sidewalls 2407 and on the top surface of the second
transparent structure 18. Then, a breaking step is performed along
the cavities 2408 to separate the wavelength-converting layer 2404,
and then expanding the support 2410 to expand the distance between
two adjacent optoelectronic units 14' for an encapsulating material
to encapsulate the optoelectronic units 14'. The encapsulating
parts 2409 are formed by encapsulating the optoelectronic elements
14' with the encapsulating material. The encapsulating part 2409
covers the wavelength-converting layer 2404 and the optoelectronic
units 14' except the bottom surface of the first transparent
structure 16. The encapsulating part 2409 functions as an optical
element, and the shape of the encapsulating part 2409 may be a dome
shape to reduce the total internal reflection (TIR) at the
interface between the encapsulating part 2409 and the environment,
such as air. A material for the encapsulating part 2409 includes
polymer material, such as epoxy resin or silicone. The
optoelectronic elements 2400 are separated from each other after
being removed from the support 2410 in FIG. 24D. In an alternative
embodiment, the encapsulating part 2409 is formed one by one for
each optoelectronic units 14' after the optoelectronic units 14'
are separated from each other.
[0073] FIG. 24E illustrates a detailed structure of an embodiment
of the optoelectronic element 2400 in accordance with an embodiment
of the present application. The optoelectronic element 2400
includes an optoelectronic unit 14'; a first transparent structure
16 covering the optoelectronic unit 14'; a second transparent
structure 18 on the first transparent structure 16; a
wavelength-converting layer 2404 on the second transparent
structure 18 and covering the first transparent structure 16 and
the second transparent structure 18; a conductive structures 2' on
the first surface 141 of the optoelectronic unit 14' and on the
first transparent structure 16; and an encapsulating part 2409
covering the wavelength-converting layer 2404.
[0074] The optoelectronic unit 14' includes a substrate 145a, a
first conductive layer 145b, an active layer 145c, and a second
conductive layer 145d. The optoelectronic unit 14' includes a top
surface 141, a bottom surface 143 opposite to the top surface 141,
and a lateral surface 140 between the top surface 141 and the
bottom surface 143. The first transparent structure 16 is on the
optoelectronic unit 14' and covering the lateral surface 140 and
the bottom surface 143. The second transparent structure 18 is on
the first transparent structure 16, and the outer profile of the
stack of the first transparent structure 16 and the second
transparent structure 18 is substantially a trapezoid in a
cross-sectional view. The wavelength-converting layer 2404 is on
the second transparent structure 18 and covering the first
transparent structure 16 and the second transparent structure 18
wherein a sidewall of the second transparent structure 18 and a
sidewall of the first transparent structure 16 are inclined, and
together forms a continuous inclined sidewall 2407. The material
the wavelength-converting layer 2404 includes the materials of the
third wavelength-converting layer 1904. The conductive structures
2' includes a first insulating layer 22, a first conductive layer
282, and second conductive layer 284. The first insulating layer 22
is on the first top surface 141 of the optoelectronic unit 14' and
the surface 162' of the first transparent structure 16. The
material of the first insulating layer 22 can be the same as or
different from that of the first transparent structure 16. A first
opening 212 and a second opening 214 is through the first
insulating layer 22 to expose the second conductive type layer 145d
and the first conductive type layer 145b respectively. The first
conductive layer 282 is on the first insulating layer 22 and
electrically connects to the first conductive type layer 145b via
the first opening 212. The second conductive layer 284 is on the
first insulating layer 22 and electrically connects to the second
conductive type layer 145d via the second first opening 214. The
encapsulating part 2409 encapsulates the wavelength-converting
layer 2404 and exposes the bottom surface of the first transparent
structure 16. In one example, the refractive index of the first
transparent structure 16, the second transparent structure 18, and
the encapsulating part 2409 is gradually changed, for example,
gradually decreased to the environment for enhancing light
extraction efficiency. For example, the refractive index of the
first transparent structure 16 is larger than that of the second
transparent structure 18, and the refractive index of the second
transparent structure 18 is larger than that of the encapsulating
part 2409. When the optoelectronic element 2400 is mounted to a
sub-mount with the first top surface 141 of the optoelectronic unit
14' facing the sub-mount, the wavelength-converting layer 2404
covers the bottom surface 143 and the lateral surface 140 of the
optoelectronic unit 14' fully to assure that the light generated
from the active layer 145c is transmitted outside the
optoelectronic element 2400 after passing through the
wavelength-converting layer 2404. Therefore, the light from the
optoelectronic element 2400 has uniform color distribution.
[0075] FIG. 13 illustrates a schematic diagram of a
light-generating device 130. The light-generating device 130
includes the light-emitting element of any one of the foregoing
embodiments of the present application. The light-generating device
130 can be an illumination device such as a street light, a lamp of
vehicle, or an illustration source for interior. The
light-generating device 130 can be also a traffic sign or a
backlight of a backlight module of an LCD. The light-generating
device 130 includes a light source 131 adopting any foregoing
light-emitting devices; a power supplying system 132 providing
current to the light source 131; and a control element 133
controlling the power supplying system 132.
[0076] FIG. 14 illustrates a schematic diagram of a back light
module 140. The back light module 140 includes the light-generating
device 130 of the foregoing embodiment and an optical element 141.
The optical element 141 can process the light generated by the
light-generating device 130 for LCD application, such as scattering
the light generated from the light-generating device 130.
[0077] It will be apparent to those having ordinary skill in the
art that various modifications and variations can be made to the
devices in accordance with the present disclosure without departing
from the scope or spirit of the disclosure. In view of the
foregoing, it is intended that the present disclosure covers
modifications and variations of this disclosure provided they fall
within the scope of the following claims and their equivalents
* * * * *