U.S. patent application number 15/636908 was filed with the patent office on 2018-01-18 for element substrate and light-emitting device.
The applicant listed for this patent is Semiconductor Energy Laboratory Co., Ltd.. Invention is credited to Aya ANZAI, Ryota FUKUMOTO, Mitsuaki OSAME, Yu YAMAZAKI.
Application Number | 20180019292 15/636908 |
Document ID | / |
Family ID | 33101960 |
Filed Date | 2018-01-18 |
United States Patent
Application |
20180019292 |
Kind Code |
A1 |
OSAME; Mitsuaki ; et
al. |
January 18, 2018 |
ELEMENT SUBSTRATE AND LIGHT-EMITTING DEVICE
Abstract
A potential of a gate of a driving transistor is fixed, and the
driving transistor is operated in a saturation region, so that a
current is supplied thereto anytime. A current control transistor
operating in a linear region is disposed serially with the driving
transistor, and a video signal for transmitting a signal of
emission or non-emission of the pixel is input to a gate of the
current control transistor via a switching transistor.
Inventors: |
OSAME; Mitsuaki;
(Atsugi-shi, JP) ; ANZAI; Aya; (Tsukui, JP)
; YAMAZAKI; Yu; (Tokyo, JP) ; FUKUMOTO; Ryota;
(Atsugi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Semiconductor Energy Laboratory Co., Ltd. |
Atsugi-shi |
|
JP |
|
|
Family ID: |
33101960 |
Appl. No.: |
15/636908 |
Filed: |
June 29, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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15082012 |
Mar 28, 2016 |
9698207 |
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15636908 |
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|
14183679 |
Feb 19, 2014 |
9300771 |
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15082012 |
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13243034 |
Sep 23, 2011 |
8659523 |
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14183679 |
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10807545 |
Mar 24, 2004 |
8026877 |
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13243034 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G09G 3/3233 20130101;
G09G 3/3291 20130101; H01L 27/3262 20130101; H04M 1/0266 20130101;
H01L 27/3276 20130101; H01L 29/78675 20130101; H01L 27/12 20130101;
H01L 27/1251 20130101; G09G 3/2022 20130101; G09G 2300/0426
20130101; H01L 51/52 20130101; H01L 27/124 20130101; G09G 2300/0842
20130101; G09G 2310/0251 20130101; H01L 27/1214 20130101; H01L
27/3248 20130101; H01L 27/1222 20130101; G09G 2320/0233 20130101;
H01L 27/1255 20130101; H01L 27/3244 20130101; H01L 27/3246
20130101; G09G 2320/0219 20130101; H01L 2251/5323 20130101; G09G
2300/0861 20130101 |
International
Class: |
H01L 27/32 20060101
H01L027/32; H01L 27/12 20060101 H01L027/12; H04M 1/02 20060101
H04M001/02; H01L 51/52 20060101 H01L051/52 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 26, 2003 |
JP |
2003-086500 |
May 16, 2003 |
JP |
2003-139560 |
Jun 18, 2003 |
JP |
2003-174134 |
Claims
1. (canceled)
2. A light-emitting device comprising: a semiconductor film; a gate
insulating film over the semiconductor film; a first gate electrode
over the gate insulating film; a second gate electrode over the
gate insulating film; a first insulating film over the first gate
electrode and the second gate electrode, the first insulating film
comprising a first contact hole and a second contact hole; a first
conductive film over the first insulating film; a second conductive
film over the first insulating film; a second insulating film over
the first conductive film and the second conductive film, the
second insulating film comprising a third contact hole; and a
light-emitting element over the second insulating film, wherein the
semiconductor film comprises a first region, a second region, a
third region and a fourth region, wherein the first region is
electrically connected to the first conductive film through the
first contact hole, wherein the second region is electrically
connected to the second conductive film through the second contact
hole, wherein the second conductive film is electrically connected
to the light-emitting element through the third contact hole,
wherein the first gate electrode overlaps an entirety of the third
region, wherein the second gate electrode overlaps entirety of the
fourth region, wherein the third region comprises a winding
portion, wherein a first transistor comprises the third region is
configured to operate in a saturation area when the light-emitting
element emits light, and wherein a second transistor comprises the
fourth region is configured to operate in a linear area when the
light-emitting element emits light.
3. The light-emitting device according to claim 2, further
comprising a resin over the light-emitting element.
4. The light-emitting device according to claim 2, wherein a
channel length of the first transistor is L1, wherein a channel
width of the first transistor is W1, wherein a channel length of
the second transistor is L2, wherein a channel width of the second
transistor is W2, and wherein when L1/W1:L2/W2=X:1, X is greater
than 5 and less than 600.
5. A light-emitting device comprising: a semiconductor film; a gate
insulating film over the semiconductor film; a first gate electrode
over the gate insulating film; a second gate electrode over the
gate insulating film; a first insulating film over the first gate
electrode and the second gate electrode, the first insulating film
comprising a first contact hole and a second contact hole; a first
conductive film over the first insulating film; a second conductive
film over the first insulating film; a second insulating film over
the first conductive film and the second conductive film, the
second insulating film comprising a third contact hole; and a
light-emitting element over the second insulating film, wherein the
semiconductor film comprises a first region, a second region, a
third region and a fourth region, wherein the first region is
electrically connected to the first conductive film through the
first contact hole, wherein the second region is electrically
connected to the second conductive film through the second contact
hole, wherein a power line comprises the first conductive film,
wherein the first conductive film overlaps the first gate electrode
and the third region, wherein the second conductive film is
electrically connected to the light-emitting element through the
third contact hole, wherein the first gate electrode overlaps an
entirety of the third region, wherein the second gate electrode
overlaps entirety of the fourth region, wherein the third region
comprises a winding portion, wherein a first transistor comprises
the third region is configured to operate in a saturation area when
the light-emitting element emits light, and wherein a second
transistor comprises the fourth region is configured to operate in
a linear area when the light-emitting element emits light.
6. The light-emitting device according to claim 5, further
comprising a resin over the light-emitting element.
7. The light-emitting device according to claim 5, wherein a
channel length of the first transistor is L1, wherein a channel
width of the first transistor is W1, wherein a channel length of
the second transistor is L2, wherein a channel width of the second
transistor is W2, and wherein when L1/W1:L2/W2=X:1, X is greater
than 5 and less than 600.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 15,082,012, filed Mar. 28, 2016, now allowed, which is a
continuation of U.S. application Ser. No. 14/183,679, filed Feb.
19, 2014, now U.S. Pat. No. 9,300,771, which is a continuation of
U.S. application Ser. No. 13/243,034, filed Sep. 23, 2011, now U.S.
Pat. No. 8,659,523, which is a continuation of U.S. application
Ser. No. 10/807,545, filed Mar. 24, 2004, now U.S. Pat. No.
8,026,877, which claims the benefit of foreign priority
applications filed in Japan as Serial No. 2003-086500 on Mar. 26,
2003, Serial No. 2003-139560 on May 16, 2003, and Serial No.
2003-174134 on Jun. 18, 2003, all of which are incorporated by
reference.
TECHNICAL FIELD
[0002] The present invention relates to a light-emitting device in
which each of pixels is provided with a light-emitting element and
a means for supplying a current to the light-emitting element and
an element substrate.
BACKGROUND ART
[0003] A light-emitting element is high in visibility and optimum
for low profiling since it emits light and does not require any
backlight which is required in a liquid crystal display device
(LCD), and that has no limitation in visual angle. Therefore, in
recent years, a light-emitting device using the light-emitting
element has attracted attention as a display device alternative to
a CRT and the LCD. In addition, as used herein, the light-emitting
element means an element whose luminosity is controlled by a
current or a voltage, and an OLED (Organic Light Emitting Diode),
an MIM type electron source element (electron emitting element)
used in and an FED (Field Emission Display), and the like are fall
within the definition.
[0004] The light-emitting device includes a panel and a module
having an IC or the like including a controller mounted on the
panel. This invention also relates to an element substrate
equivalent to one mode achieved before a completion of the panel in
a process of manufacturing the light-emitting device, and each of
pixels in the element substrate is provided with a means for
supplying a current to the light-emitting element.
[0005] The OLED (Organic Light Emitting Diode) which is a variation
of the light-emitting element has a layer comprising an
electro-luminescent material capable of obtaining luminescence
(electro-luminescence) generated upon application of an electric
field (hereinafter referred to as an electro-luminescent layer), an
anode layer, and a cathode layer. The electro-luminescent layer is
provided between the anode and the cathode and constituted of a
layer or a plurality of layers. In some cases, an inorganic
compound is contained in the layer or layers. A light emission
(fluorescence) generated when a singlet excitation state returns to
a ground state and a light emission (phosphorescence) generated
when a triplet excitation state returns to a ground state are
included in the luminescence in the electro-luminescent layer.
[0006] Hereinafter, a structure of a pixel of an ordinary
light-emitting device and driving of the pixel will be described
briefly. The pixel shown in FIG. 7 has a switching transistor 700,
a driving transistor 701, a capacitance element 702, and a
light-emitting element 703. A gate of the switching transistor 700
is connected to a scan line 705, and a source thereof is connected
to a signal line 704 when a drain thereof is connected to a gate of
the driving transistor 701. A source of the driving transistor 701
is connected to a power line 706, and a drain thereof is connected
to an anode of the light-emitting element 703. A cathode of the
light-emitting element 703 is connected to a counter electrode 707.
The capacitance element 702 is provided in such a manner as to
retain a potential difference between the gate and the source of
the driving transistor 701. Predetermined voltages are applied
separately to the power line 706 and the counter electrode 707, so
that the power line 706 and the counter electrode 707 have a
potential difference therebetween.
[0007] When the switching transistor 700 is turned on by a signal
from the scan line 705, a video signal input to the signal line 704
is input to the gate of the driving transistor 701. A potential
difference between a potential of the input video signal and the
power line 706 becomes a gate/source voltage Vgs, so that a current
is supplied to the light-emitting element 703 to cause the
light-emitting element 703 to emit light.
DISCLOSURE OF THE INVENTION
Problems that the Invention is to Solve
[0008] Incidentally, since a transistor using polysilicon, for
example, is suitably used as a transistor of the light-emitting
device since it has a high field effect mobility and a large
on-current. In turn, the transistor using polysilicon has a
drawback that a variation in characteristics tends to occur due to
a defect formed in a grain boundary.
[0009] Referring to the pixel shown in FIG. 7, when drain currents
of the driving transistors 701 vary pixel by pixel, irregularity in
luminosity of the light-emitting elements 703 undesirably occurs
because the drain currents of the driving transistor 701 vary
depending on the pixels.
[0010] As a measure for suppressing the variation in drain
currents, a method of increasing an L/W (L: channel length, W:
channel width) of the driving transistor 701 proposed in Japanese
Patent Application No. 2003-008719 is known. The drain current Ids
in a saturation area of the driving transistor 701 is given by the
following equation (1).
Ids=.beta.(Vgs-Vth).sup.2/2 (1)
[0011] From the equation (1), since the drain current Ids in the
saturation area of the driving transistor 701 influences greatly on
the current flowing when there is a slightest change in Vgs, a
precaution must be taken so as to prevent the voltage Vgs retained
between the gate and the source of the driving transistor 701 from
being changed during the light emission of the light-emitting
element 703. Therefore, it is necessary to increase capacitance of
the capacitance element 702 provided between the gate and the
source of the driving transistor 701 and to suppress an off-current
of the switching transistor 700 as low as required.
[0012] Achievement of both of the suppression of the off-current of
the switching transistor 700 and the increase in the on-current for
charging large capacitance is a difficult task in a transistor
manufacturing process.
[0013] Also, there is a problem that Vgs of the driving transistor
701 is changed by a switching of the switching transistor 700, a
change in potential of the signal line or the scan line, and so
forth. The problem is attributable to stray capacitance at the gate
of the driving transistor 701.
[0014] In view of the above problems, an object of this invention
is to provide a light-emitting device which does not require the
suppression of an off-current of the switching transistor 700 nor
the increase in capacitance of the capacitance element 702 and is
less subject to the influence of the stray capacitance and capable
of suppressing irregularity in luminosity of light-emitting
elements 703 of pixels and an element substrate.
Means for Solving the Problems
[0015] In this invention, a potential of a gate of a driving
transistor is fixed, and the driving transistor is operated in a
saturation area so that a current is supplied thereto anytime. A
current control transistor operating in a linear area is provided
serially with the driving transistor, and a video signal for
transmitting a signal of emission or non-emission of a pixel is
input to a gate of the current control transistor via a switching
transistor.
[0016] A source/drain voltage Vds of the current control transistor
is small since the current control transistor is operated in the
linear area, and a slightest change in the gate/source voltage Vgs
of the current control transistor does not influence on the current
flowing to the light-emitting element. The current flowing to the
light-emitting element is decided by the driving transistor
operating in the saturation area.
Advantage of the Invention
[0017] It is possible to avoid the influences to be otherwise
exerted on the current flowing to the light-emitting element
without increasing the capacitance of the capacitance element
provided between the gate and the source of the current control
transistor and suppressing an off-current of the switching
transistor. Further, the current is free from the influence of
stray capacitance at the gate of the current control transistor.
Therefore, it is possible to reduce the variation factors to
greatly increase image quality.
[0018] Also, since it is unnecessary to suppress the off-current of
the switching transistor, it is possible to simplify a transistor
manufacturing process to contribute to a cost reduction and an
improvement in yield.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] FIG. 1 is a diagram showing one embodiment of this
invention.
[0020] FIG. 2 is a diagram showing another embodiment of this
invention.
[0021] FIG. 3 is a diagram showing a general outline of an external
circuit and a panel.
[0022] FIG. 4 is a diagram showing one example of a signal line
driving circuit.
[0023] FIG. 5 is a diagram showing one example of a top view of
this invention.
[0024] FIG. 6 is a diagram showing one example of an electronic
appliance to which this invention is applicable.
[0025] FIG. 7 is a diagram showing a conventional example.
[0026] FIG. 8 is a diagram showing another example of the top view
of this invention.
[0027] FIG. 9 is a diagram showing one example of a sectional
structure of this invention.
[0028] FIG. 10 is a diagram showing one example of an operation
timing of this invention.
[0029] FIG. 11 is a diagram showing another example of the
sectional structure of this invention.
[0030] FIG. 12 is a diagram showing another embodiment of this
invention.
[0031] FIG. 13 is a diagram showing another example of the top view
of this invention.
[0032] FIG. 14 is a diagram showing another embodiment of this
invention.
[0033] FIG. 15 is a diagram showing another embodiment of this
invention.
[0034] FIG. 16 is a diagram showing another example of the top view
of this invention.
[0035] FIG. 17 is a diagram showing another example of the top view
of this invention.
[0036] FIG. 18 is a diagram showing another example of the
sectional structure of this invention.
[0037] FIG. 19 is a diagram showing another example of the
sectional structure of this invention.
[0038] FIG. 20 is a diagram showing another example of the top view
of this invention.
[0039] FIG. 21 is an illustration of pixel driving methods of this
invention.
[0040] FIG. 22 is an illustration of driving methods of an active
matrix type light-emitting device.
[0041] FIG. 23 is an illustration of driving methods classified
according to a video signal using a voltage and a video signal
using a current.
BEST MODE FOR CARRYING OUT THE INVENTION
[0042] Hereinafter, embodiments of this invention will be described
with reference to the drawings. Note that this invention can be
carried out as various different embodiments, and those skilled in
the art will readily understand that it is possible to modify modes
and details of the embodiments without departing from the sprit and
the scope of the invention.
Embodiment 1
[0043] One embodiment of a pixel included in a light-emitting
device of this invention is shown in FIG. 1. The pixel shown in
FIG. 1 has a transistor (switching transistor) 101 used as a
switching element for controlling an input of a video signal to the
pixel, and a driving transistor 102 for controlling a value of a
current flowing to a light-emitting element 104, and a current
control transistor 103 for controlling a supply of the current to
the light-emitting element 104. The pixel may be provided with a
capacitance element 105 for maintaining a potential of the video
signal, as is the case with this embodiment.
[0044] The driving transistor 102 and the current control
transistor 103 are identical in conductivity. In this invention,
the driving transistor 102 is operated in a saturation area while
the current control transistor 103 is operated in a linear
area.
[0045] Further, an L of the driving transistor 102 may be longer
than a W thereof, and an L of the current control transistor 103
may be equal to or shorter than a W thereof. More preferably, a
ratio of the L of the driving transistor 102 to the W thereof may
be 5 or more. Also, when L1/W1:L2/W2=X:1 holds (wherein, a channel
length of the driving transistor 102, a channel width of the
driving transistor 102, a channel length of the current control
transistor 103 and a channel width of the current control
transistor 103 are represented by L1, W1, L2, and W2), it is
preferable to keep X in the range of 5 to 6,000. For instance,
L1/W1=500 .mu.m/3 .mu.m, and L2/W2=3 .mu.m/100 .mu.m.
[0046] Either one of an enhancement transistor or a depletion
transistor may be used as the driving transistor 102.
[0047] Also, either one of an N-type transistor or a P-type
transistor may be used as 20 the switching transistor 101.
[0048] A gate of the switching transistor 101 is connected to a
scan line Gj (j=1 to y). A source of the switching transistor 101
is connected to a signal line Si (i=1 to x) when a drain of the
switching transistor 101 is connected to a gate of the current
control transistor 103. A gate of the driving transistor 102 is
connected to a second power line Wi (i=1 to x). The driving
transistor 102 and the current control transistor 103 are connected
to a first power line Vi (i=1 to x) and the light-emitting element
104 in such a manner that a current supplied from the first power
line Vi (i=1 to x) is supplied to the light-emitting element 104 as
a drain current for the driving transistor 102 and the current
control transistor 103. In this embodiment, a source of the current
control transistor 103 is connected to the first power line Vi (i=1
to x), and a drain of the driving transistor 102 is connected to a
pixel electrode of the light-emitting element 104.
[0049] The source of the driving transistor 102 may be connected to
the first power line Vi (i=1 to x), and the drain of the current
control transistor 103 may be connected to the pixel of the
light-emitting element 104.
[0050] The light-emitting element 104 is formed of an anode, a
cathode, and an electro-luminescent layer provided therebetween. In
the case where the anode is connected to the driving transistor 102
as shown in FIG. 1, the anode serves as the pixel electrode while
the cathode serves as a counter electrode. A potential difference
is set between the counter electrode of the light-emitting element
104 and the first power line Vi (i=1 to x) so that a current in a
forward bias direction is supplied to the light-emitting element
104. In addition, the counter electrode is connected to a third
power line.
[0051] The capacitance element 105 has two electrodes, one of which
is connected to the first power line Vi (i=1 to x) and the other is
connected to the gate of the current control transistor 103. The
capacitance element 105 is provided for the purpose of maintaining
a potential difference between the electrodes of the capacitance
element 105 when the switching transistor 101 is in a non-selection
state (off-state). Note that this invention is not limited to the
constitution including the capacitance element 105 shown in FIG. 1,
and it is possible to use a constitution which does not include the
capacitance element 105.
[0052] In FIG. 1, the P-type transistors are used as the driving
transistor 102 and the current control transistor 103 and the drain
of the driving transistor 102 is connected to the anode of the
light-emitting element 104. In the case of using N-type transistors
as the driving transistor 102 and the current control transistor
103, the source of the driving transistor 102 is connected to the
cathode of the light-emitting element 104. In this case, the
cathode of the light-emitting element 104 serves as the pixel
electrode and the anode thereof serves as the counter
electrode.
[0053] Next, a method of driving the pixel shown in FIG. 1 will be
described. Operation of the pixel shown in FIG. 1 can be divided
into a write period and a data retention period.
[0054] When the scan line Gj (j=1 to y) is selected in the write
period, the switching transistor 101 whose gate is connected to the
scan line Gj (j=1 to y) is turned on. Then, a video signal is input
to the signal line Si (i=1 to x) to be input to the gate of the
current control transistor 103 via the switching transistor 101.
Note that the driving transistor 102 is always in an on-state
because its gate is connected to the first power line Vi (i=1 to
x).
[0055] In the case where the current control transistor 103 is
turned on by the video signal, a current is supplied to the
light-emitting element 104 via the first power line Vi (i=1 to x).
Here, since the current control transistor 103 operates in the
linear area, the current flowing to the light-emitting element 104
is decided depending on the driving transistor 102 operating in the
saturation area and a voltage/current characteristic of the
light-emitting element 104. The light-emitting element 104 emits
light having luminosity corresponding to the supplied current.
[0056] In the case where the current control transistor 103 is
turned off by the video signal, no current is supplied to the
light-emitting element 104 so that the light-emitting element 104
does not emit light.
[0057] In the data retention period, a potential of the scan line
Gaj (j=1 to y) is so controlled as to turn off the switching
transistor 101, so that a potential of the video signal written
during the write period is maintained. Since the potential of the
video signal is maintained by the capacitance element 105 in the
case where the current control transistor 103 is turned on during
the write period, the current supply to the light-emitting element
104 is maintained. In contrast, because the potential of the video
signal is maintained by the capacitance element 105 when the
current control transistor 103 is turned off during the write
period, the current supply to the light-emitting element 104 is not
performed.
[0058] An element substrate is equivalent to one mode achieved
before a completion of a formation of the light-emitting element in
the course of manufacturing the light-emitting device of this
invention.
[0059] A transistor formed by using monocrystalline silicon, a
transistor using an SOI, and a thin film transistor using
polycrystalline silicon or amorphous silicon may be used as the
transistors of this invention. A transistor using an organic
semiconductor and a transistor using a carbon nanotube may also be
used. Each of the transistors provided in the pixel of the
light-emitting device of this invention may have a single gate
structure, a double gate structure, or a multi-gate structure
having more than 2 gate electrodes.
[0060] With the above-described constitution, the current control
transistor 103 is operated in the linear area to achieve a small
source/drain voltage Vds of the current control transistor 103, and
a slight fluctuation in the gate/source voltage Vgs of the current
control transistor 103 does not influence on the current flowing to
the light-emitting element 104. The current flowing to the
light-emitting element 104 is decided by the driving transistor 102
operating in the saturation area. Therefore, it is unnecessary to
increase the capacitance of the capacitance element 105 provided
between the gate and the source of the current control transistor
103 nor to suppress the off-current of the switching transistor 101
to keep the current flowing to the light-emitting element 104 free
from adverse effects. Also, the current flowing to the
light-emitting element 104 is free from adverse effects of stray
capacitance at the gate of the current control transistor 103.
Since the factors for fluctuation is thus reduced, it is possible
to greatly increase image quality.
[0061] In addition, since the active matrix type light-emitting
device is capable of maintaining the current supply to the
light-emitting element for a certain period of time after the input
of the video signal, it has flexibility toward a large size panel
and high definition and is becoming a mainstream product for near
future. Specific pixel structures of the active matrix type
light-emitting devices which have been proposed vary depending
light-emitting device manufactures, and each of them has its
specific technical contrivance. Shown in FIG. 22 is a systematic
illustration of types of driving methods of the active matrix type
light-emitting device.
[0062] As shown in FIG. 22, the driving methods in the active
matrix type light-emitting device are generally divided into those
using a digital video signal and those using an analog video
signal. The analog light-emitting devices are further divided into
those using current modulation wherein a value of a current to be
supplied to the light-emitting element is modulated in an analog
manner and those using time modulation wherein gradation is
expressed by changing a length of each of on and off of an
inverter. The current modulation type light-emitting devices can be
divided into those having a Tr characteristic correction circuit
and those do not have the Tr characteristic correction circuit. The
Tr characteristic correction circuit is a circuit for correcting a
variation in characteristics of driving transistors, and some Tr
characteristic correction circuits correct only a threshold value
while other Tr characteristic correction circuits correct a current
value (threshold value, mobility, and so forth).
[0063] The light-emitting devices having the Tr characteristic
correction circuit classified into the current modulation type can
be divided into those correcting the threshold value by voltage
programming and those correcting the current value by current
programming. The voltage programming is used for correcting a
fluctuation in threshold value of the driving transistor. The
current programming is used for correcting a fluctuation in current
value (including threshold value, mobility, and so forth) of the
driving transistor. The video signal is input by a current. The
light-emitting element is a current driving element, and it is more
straightforward to use the current value as date because light
emission luminosity hinges upon the current.
[0064] The light-emitting devices correcting the current value by
the current programming can be divided into those of a current
mirror type and those do not use any current mirror. The current
mirror type has a pixel circuit using a current mirror circuit, and
a transistor for setting a current is provided separately from a
transistor for supplying a current. Identical characteristics of
the two transistors constituting a mirror are a major premise. The
light-emitting device without current mirror does not use the
current mirror circuit, and one transistor performs the current
setting and the current supply.
[0065] The light-emitting devices classified into the digital
light-emitting device can be divided into those of an area
gradation and those of a time gradation. The area gradation is used
for performing a gradation display by selecting among weights
1:2:4:8 and so forth set in light emission areas of sub-pixels
provided in a pixel. The time gradation is used for performing a
gradation display by selecting among weights 1:2:4:8 and so forth
set in light emission periods of sub-frames provided in one
frame.
[0066] The time gradation is divided into a DPS (Display Period
Separated) driving and an SES (Simultaneous Erasing Scan) driving.
In the DPS driving, the sub-frame is constituted of an addressing
period and a lighting period. The DPS driving is disclosed in M.
Mizukami et al., 6-Bit Digital VGA OLED, SID '00 Digest, p. 912. In
the SES driving, it is possible to overlap the addressing period
with the lighting period by using an erasing transistor, so that
the lighting period of the light-emitting element is increased. The
SES driving is disclosed in K. Inukai et al., 4.0-in. TFT-OLED
Displays and a Novel Digital Driving Method, SID '00 Digest, p.
924.
[0067] The SES driving is divided into a constant current driving
and a constant voltage driving. The constant current driving is
used for driving a light-emitting element with a constant current,
so that the constant current is supplied irrelevant from a change
in resistance of the light-emitting element. The constant voltage
driving is used for driving a light-emitting element with a
constant voltage.
[0068] The light-emitting device of the constant current driving is
divided into a light-emitting device with Tr characteristic
correction circuit and a light-emitting device without Tr
characteristic correction circuit. A light-emitting device (CCT1)
driven by the method disclosed in PCT publication NO. WO 03/027997
and a light-emitting device (CCSP) driven by the method disclosed
in Japanese Patent Application No. 2002-056555 are included in the
light-emitting device with Tr characteristic correction circuit.
The light-emitting device without Tr characteristic correction
circuit is further divided into a long channel length driving Tr
type and a fixed gate potential for light emission type. The long
channel length driving Tr type is disclosed in Japanese Patent
Application No. 2002-025065. The long channel length driving Tr
type is used for suppressing a characteristics variation in driving
transistors during the constant current driving. By greatly
elongating the gate length, it is unnecessary to use Vgs near the
threshold value, thereby suppressing a fluctuation in value of the
current flowing to the light-emitting element of each of
pixels.
[0069] The fixed gate potential for light emission is used for
fixing a potential of a gate of a driving transistor during the
light emission period of the light emission element at a value with
which the driving transistor is turned on to keep Vgs of the
driving transistor at a constant value, thereby improving display
defect. Data are input to a gate of a current control transistor
disposed serially with the driving transistor. There is a long
channel length driving Tr type included among the light-emitting
devices of the fixed gate potential for light emission type. The
light-emitting device of this invention is classified under the
long channel length driving Tr type using the fixed gate potential
for light emission.
[0070] Shown in FIG. 23 is an illustration of driving methods
classified according to a video signal using a voltage and a video
signal using a current. As shown in FIG. 23, the driving methods
are divided into those wherein a video signal to be input to the
pixel is at a constant voltage (CV) in the light emission of the
light-emitting element and those wherein a video signal to be input
to the pixel is at a constant current (CC) in the light emission of
the light-emitting element. Those wherein the video signal is the
constant current (CV) are divided into a driving method wherein a
voltage applied to the light-emitting element has a constant value
(CVCV) and a driving method wherein a current applied to the
light-emitting element has a constant value (CCCC).
Embodiment 2
[0071] In this embodiment, a mode of pixels provided in the
light-emitting device of this invention, which is different from
that of FIG. 1, will be described.
[0072] A pixel shown in FIG. 2 has a light-emitting element 204, a
switching transistor 201, a driving transistor 202, a current
control transistor 203, and a transistor 206 (erasing transistor)
for forcibly turning off the current control transistor 203. The
pixel may be provided with a capacitance element 205 in addition to
the above elements.
[0073] The driving transistor 202 and the current control
transistor 203 are identical in conductivity. In this invention,
the driving transistor 202 is operated in a saturation area while
the current control transistor 203 is operated in a linear
area.
[0074] Further, an L of the driving transistor 202 may be longer
than a W thereof, and an L of the current control transistor 203
may be equal to or shorter than a W thereof. More preferably, a
ratio of the L of the driving transistor 202 to the W thereof may
be 5 or more.
[0075] Either one of an enhancement transistor or a depletion
transistor may be used as the driving transistor 202.
[0076] Either one of an N-type transistor or a P-type transistor
may be used as the switching transistor 201 and the erasing
transistor 206.
[0077] A gate of the switching transistor 201 is connected to a
first scan line Gaj (j=1 to y). A source of the switching
transistor 201 is connected to a signal line Si (i=1 to x) when a
drain of the switching transistor 201 is connected to a gate of the
current control transistor 203. A gate of the erasing transistor
206 is connected to a second scan line Gej (j=1 to y), and a source
thereof is connected to a first power line Vi (i=1 to x) when a
drain thereof is connected to the gate of the current control
transistor 203. A gate of the driving transistor 202 is connected
to a second power line Wi (i=1 to x). The driving transistor 202
and the current control transistor 203 are connected to the first
power line Vi (i=1 to x) and the light-emitting element 204 in such
a manner that a current supplied from the first power line Vi (i=1
to x) is supplied to the light-emitting element 204 as a drain
current of the driving transistor 202 and the current control
transistor 203. In this embodiment, a source of the current control
transistor 203 is connected to the first power line Vi (i=1 to x),
and a drain of the driving transistor 202 is connected to a pixel
electrode of the light-emitting element 204.
[0078] The source of the driving transistor 202 may be connected to
the first power line Vi (i=1 to x), and the drain of the current
control transistor 203 may be connected to the pixel electrode of
the light-emitting element 204.
[0079] The light-emitting element 204 is formed of an anode, a
cathode, and an electro-luminescent layer provided between the
anode and the cathode. In the case where the anode is connected to
the driving transistor 202 as shown in FIG. 2, the anode serves as
the pixel electrode while the cathode serves as a counter
electrode. A potential difference is set between the counter
electrode of the light-emitting element 204 and the first power
line Vi (i=1 to x) so that a current in a forward bias direction is
supplied to the light-emitting element 204. In addition, the
counter electrode is connected to a third power line.
[0080] The capacitance element 205 has two electrodes, one of which
is connected to the first power line Vi (i=1 to x) and the other is
connected to the gate of the current control transistor 203.
[0081] In FIG. 2, P-type transistors are used as the driving
transistor 202 and the current control transistor 203, and the
drain of the driving transistor 202 is connected to the anode of
the light-emitting element 204. In the case of using N-type
transistors as the driving transistor 202 and the current control
transistor 203, the source of the driving transistor 202 is
connected to the cathode of the light-emitting element 204. In this
case, the cathode of the light-emitting element 204 serves as the
pixel electrode, and the anode thereof serves as the counter
electrode.
[0082] Operation of the pixel shown in FIG. 2 can be divided into a
write period, a data retention period, and an erasing period.
Operations of the switching transistor 201, the driving transistor
202, and the current control transistor 203 in the write period and
data retention period are the same as those of FIG. 1.
[0083] Shown in FIG. 21(A) is an operation when the current control
transistor 203 is turned on by a video signal during the write
period, and shown in FIG. 21(B) is an operation when the current
control transistor 203 is in an off-state during the write period.
Shown in FIG. 21(C) is an operation when the current control
transistor 203 is in an on-state during the data retention period,
and shown in FIG. 21(D) is an operation during the erasing period.
In addition, in order to facilitate understanding of the
operations, the switching transistor 210, the current control
transistor 203, and the erasing transistor 206 used as switching
elements are illustrated in FIGS. 21(A) to 21(D) as switches.
[0084] When the first scan line Gaj (j=1 to y) is selected during
the write period, the switching transistor 201 whose gate is
connected to the first scan line Gaj (j=1 to y) is turned on. Then,
a video signal input to a signal line Si (i =1 to x) is input to
the gate of the current control transistor 203 via the switching
transistor 201. Since the gate of the driving transistor 202 is
connected to the first power line Vi (i=1 to x), the driving
transistor 202 is always in the on-state.
[0085] In the case where the current control transistor 203 is
turned on by the video signal, a current is supplied to the
light-emitting element 204 via the first power line Vi (i=1 to x)
as shown in FIG. 21(A). Here, since the current control transistor
203 operates in the linear area, the current flowing to the
light-emitting element 204 is decided depending on the driving
transistor 202 operating in the saturation area and a
voltage/current characteristic of the light-emitting element 204.
The light-emitting element 204 emits light having luminosity
corresponding to the supplied current.
[0086] In the case where the current control transistor 203 is
turned off by the video signal as shown in FIG. 21(B), no current
is supplied to the light-emitting element 204 so that the
light-emitting element 204 does not emit light.
[0087] In the data retention period, a potential of the first scan
line Gj (j=1 to y) is so controlled as to turn off the switching
transistor 201, so that a potential of the video signal written
during the write period is maintained. Since the potential of the
video signal is maintained by the capacitance element 205 in the
case where the current control transistor 203 is turned on during
the write period, the current supply to the light-emitting element
204 is maintained as shown in FIG. 21(C). In contrast, because the
potential of the video signal is maintained by the capacitance
element 205 when the current control transistor 203 is turned off
during the write period, the current supply to the light-emitting
element 204 is not performed.
[0088] During the erasing period, the second scan line Gej (j=1 to
y) is selected to turn on the erasing transistor 206 as shown in
FIG. 21(D), so that the potential of the 10 power line Vi (i=1 to
x) is applied to the gate of the current control transistor 203 via
the erasing transistor 206. Therefore, the current control
transistor 203 is turned off to forcibly create a state in which no
current is supplied to the light-emitting element 204.
EXAMPLES
[0089] Hereinafter, examples of this invention will be
described.
Example 1
[0090] A constitution and a driving in the case where the pixel
structure of this invention is used for an active matrix type
display device will be described.
[0091] Shown in FIG. 3 are a block diagram of an external circuit
and a schematic view of a panel.
[0092] As shown in FIG. 3, the active matrix type display device
has an external circuit 3004 and a panel 3010. The external circuit
3004 has an A/D converter 3001, a power unit 3002, and a signal
generation unit 3003. The A/D converter 3001 converts an image
signal which is input as an analog signal into a digital signal
(video signal) to supply the digital signal to a signal line
driving circuit 3006. The power unit 3002 generates powers each
having a desired voltage from a power supplied from a battery or an
electric outlet to supply the powers separately to the signal
driving circuit 3006, a scan line driving circuit 3007, a
light-emitting element 3001, the signal generation unit 3003, and
so forth. The power, the image signal, and a synchronizing signal
are input to the signal generation unit 3003, and the signal
generation unit 3003 performs conversions of various signals to
generate clock signals for driving the signal line driving circuit
3006 and the scan line driving circuit 3007 and like signals.
[0093] A signal and a power sent from the external circuit 3004 are
input from an FPC connecting unit 3005 disposed inside the panel
3010 to an internal circuit and the like through an FPC.
[0094] The panel 3010 has a substrate 3008 on which the FPC
connection unit 3005, the internal circuit, and the light-emitting
element 3011 are mounted. The internal circuit has the signal line
driving circuit 3006, the scan line driving circuit 3007, and a
pixel unit 3009. Though the pixel which is described in Embodiment
1 is shown in FIG. 3 by way of example, it is possible to use any
one of the pixels described in the embodiments of this invention as
the pixel unit 3009.
[0095] The pixel unit 3009 is disposed on the center of the
substrate, and the signal line driving circuit 3006 and the scan
line driving circuit 3007 are disposed around the pixel unit 3009.
The light-emitting element 3011 and a counter electrode of the
light-emitting element is formed on a whole surface of the pixel
unit 3009.
[0096] Shown in FIG. 4 is a block diagram showing the signal line
driving circuit 3006 in detail.
[0097] The signal line driving circuit 3006 has a shift resistor
4002 consisting of a plurality of D-flip flops 4001, data latch
circuits 4003, latch circuits 4004, level shifters 4005, buffers
4006, and the like.
[0098] Signals used in this example as those input to the signal
line driving circuit 3006 are a clock signal line (S-CK), a reverse
clock signal line (S-CKB), a start pulse (S-SP), a video signal
(DATA), and a latch pulse.
[0099] Sampling pulses are output from the shift register 4002
sequentially in accordance with timings of the clock signal, the
clock reverse signal, and the start pulse. The sampling pulses are
input to the data latch circuit 4003, so that the video signal is
fetched and retained at the timing of the input. This operation is
performed for each of columns sequentially from left to right.
[0100] After a completion of the video signal retention in the data
latch circuit 4003 of the last column, the latch pulse is input
during a horizontal retrace period, so that the video signals
retained in the data latch circuits 4003 are transferred
simultaneously to the latch circuits 4004. After that, the signals
are level-shifted in the level shifters 4005 and reshaped in the
buffers 4006 to be output simultaneously to the signal lines S1 to
Sn. Here, an H level and an L level are input to the pixels in
columns selected by the scan line driving circuit 3007 to control
emission and non-emission of the light-emitting elements 3011.
[0101] Though the active matrix type display device described in
this invention has the panel 3010 and the external circuit 3004
which are independent from each other, they may be integrally
formed on an identical substrate. Also, though the display device
using the OLEDs is described by way of example in this example,
light-emitting elements other than the OLEDs may be used for the
light-emitting device. Also, the level shifters 4005 and the
buffers 4006 are not necessarily disposed inside the signal line
driving circuit 3006.
Example 2
[0102] In this example, one example of a top view of the pixels
shown in FIG. 2 will be described. Shown in FIG. 5 is the pixel top
view of this example.
[0103] Denoted by 5001 is a signal line, denoted by 5002 is a first
power line, denoted by 5001 is a second power line, denoted by 5004
is a first scan line, and denoted by 5003 is a second scan line. In
this example, the signal line 5001, the first power line 5002, and
the second power line 5011 are formed from an identical
electro-conductive film, and the first scan line 5004 and the
second scan line 5003 are formed from an identical
electro-conductive film. Denoted by 5005 is a switching transistor,
and a part of the first scan line 5004 functions as a gate
electrode of the switching transistor 5005. Denoted by 5006 is an
erasing transistor, and a part of the second scan line 5003
functions as a gate electrode of the erasing transistor 5006.
Denoted by 5007 is a driving transistor, and denoted by 5008 is a
current control transistor. The driving transistor 5007 has a wound
active layer used for maintaining an L/W thereof at a value larger
than that of the current control transistor 5008. For instance, the
size of the driving transistor 5007 may be set to L=200 nm and W=4
nm, while the size of the current control transistor 5008 may be
set to L=6 nm and W=12 nm. Denoted by 5009 is a pixel electrode,
and light is emitted in an area (light-emitting area) 5010 which
overlaps with an electro-luminescent layer and a cathode (both not
shown).
[0104] The top view of this invention is not more than one example,
and it is needless to say that this invention is not limited
thereto.
Example 3
[0105] In this example, another example of the top view of the
pixels shown in FIG. 2 will be described. Shown in FIG. 8 is the
pixel top view of this example.
[0106] Denoted by 8001 is a signal line, denoted by 8002 is a first
power line, denoted by 8011 is a second power line, denoted by 8004
is a first scan line, and denoted by 8003 is a second scan line. In
this example, the signal line 8001, the first power line 8002, and
the second power line 8011 are formed from an identical
electro-conductive film, and the first scan line 8004 and the
second scan line 8003 are formed from an identical
electro-conductive film. Denoted by 8005 is a switching transistor,
and a part of the first scan line 8004 functions as a gate
electrode of the switching transistor 8005. Denoted by 8006 is an
erasing transistor, and a part of the second scan line 8003
functions as a gate electrode of the erasing transistor 8006.
Denoted by 8007 is a driving transistor, and denoted by 8008 is a
current control transistor. The driving transistor 8007 has a wound
active layer used for maintaining an L/W thereof at a value larger
than that of the current control transistor 8008. For instance, the
size of the driving transistor 8007 may be set to L=200 nm and W=4
nm, while the size of the current control transistor 8008 may be
set to L=6 nm and W=12 nm. Denoted by 8009 is a pixel electrode,
and light is emitted in an area (light-emitting area) 8010 which
overlaps with an electro-luminescent layer and a cathode (both not
shown). Denoted by 8012 is a capacitance unit formed from an
insulating film disposed between the second power line 8011 and the
current control transistor 8008.
[0107] The top view of this invention is not more than one example,
and it is needless to say that this invention is not limited
thereto.
Example 4
[0108] A sectional structure of a pixel will be described in this
example.
[0109] Shown in FIG. 9(A) is a sectional view of a pixel in the
case where a driving transistor 9021 is of the P-type, and light
emitted from a light-emitting element 9022 is ejected in a
direction of an anode 9023. Referring to FIG. 9(A), the anode 9023
of the light-emitting element 9022 is electrically connected to the
driving transistor 9021, and an electro-luminescent layer 9024 and
a cathode 9025 are formed in this order on the anode 9023. Any
known material may be used for the cathode 9025 so far as it is an
electro-conductive film having a small work function and reflecting
light. Preferred examples of the material are Ca, Al, CaF, MgAg,
AlLi, and the like. The electro-luminescent layer 9024 may be
formed of either one of one layer or a stack of a plurality of
layers. In the case where the electro-luminescent layer 9024 is
formed of the plurality of layers, a hole injection layer, a hole
transport layer, a light-emitting layer, an electron transport
layer, and an electron injection layer may be formed in this order
on the anode 9023. It is unnecessary to provide all of these
layers. A transparent electro-conductive film capable of
transmitting light is used for forming the anode 9023, and examples
of the transparent electro-conductive film may be ITO, an
electro-conductive film formed by mixing indium oxide with 2 to 20%
of zinc oxide (ZnO).
[0110] A portion at which the anode 9023, the electro-luminescent
layer 9024, and the cathode 9025 are overlapped with one another
corresponds to the light-emitting element 9022. In the case of the
pixel shown in FIG. 9(A), the light emitted from the light-emitting
element 9022 is ejected in a direction of the anode 9023 as
indicated by an white arrow
[0111] Shown in FIG. 9(B) is a sectional view of a pixel in the
case where a driving transistor 9001 is of the N-type and light
emitted from the light-emitting element 9002 is ejected in a
direction of an anode 9005. Referring to FIG. 9(B), a cathode 9003
of the light-emitting element 9002 is electrically connected to the
driving transistor 9001, and an electro-luminescent layer 9004 and
the anode 9005 are formed in this order on the cathode 9003. Any
known material may be used for the cathode 9003 so far as it is an
electro-conductive film having a small work function and reflecting
light. Preferred examples of the material are Ca, Al, CaF, MgAg,
AlLi, and the like. The electro-luminescent layer 9004 may be
formed of either one of one layer or a stack of a plurality of
layers. In the case where the electro-luminescent layer 9004 is
formed of the plurality of layers, an electron injection layer, an
electron transport layer, a light-emitting layer, a hole transport
layer, and a hole injection layer may be formed in this order on
the cathode 9003. It is unnecessary to provide all of these layers.
A transparent electro-conductive film capable of transmitting light
is used for forming the anode 9005, and examples of the transparent
electro-conductive film may be ITO, an electro-conductive film
formed by mixing indium oxide with 2 to 20% of zinc oxide
(ZnO).
[0112] A portion at which the cathode 9003, the electro-luminescent
layer 9004, and the anode 9005 are overlapped with one another
corresponds to the light-emitting element 9002. In the case of the
pixel shown in FIG. 9(B), the light emitted from the light-emitting
element 9002 is ejected in a direction of the anode 9005 as
indicated by an white arrow
[0113] Though the driving transistor is electrically connected to
the light-emitting element in this example, a current control
transistor may be connected between the driving transistor and the
light-emitting element.
Example 5
[0114] One example of a driving timing using the pixel structure of
this invention will be described using FIG. 10.
[0115] Shown in FIG. 10(A) is one example of a case of displaying a
4-bit gradation using a digital time gradation method. A length
ratio among data retention periods Ts1 to Ts4 is set to
Ts1:Ts2:Ts3:Ts4=2.sup.3:2.sup.2:2.sup.1:2.sup.0=8:4:2:1.
[0116] Operation will hereinafter be described. A first scan line
is selected in each of the rows sequentially in descending order
during a write period Tb1 to turn on switching transistors. Then,
video signals are input from signal lines to pixels, so that
emission and non-emission of the pixels are controlled by
potentials of the video signals. In the row where the video signal
writing has completed, transition to the data retention period Ts1
is performed immediately. The same operation is performed in the
rows, and a period Ta1 terminates when the operation is performed
in the last row. Here, transition to a write period Tb2 is
performed in the rows sequentially in the order of termination of
the data retention period Ts1.
[0117] Here, in a sub-frame period (corresponding to Ts4 in this
example) having a data retention period shorter than the write
period, an erasing period 2102 is provided so that the next period
does not start immediately after the termination of the data
retention period. The light-emitting elements are forcibly kept in
the non-emission state during the erasing period.
[0118] Though the case of displaying the 4-bit gradation has been
described in this example, the number of bits and the number of
gradations are not limited thereto. The order of the light emission
is not necessarily the order of from Ts1 to Ts4, and a random order
may be used, or may be divided into a plurality of sections.
[0119] Shown in FIG. 10(B) are examples of a write pulse and an
erasing pulse. The erasing pulse is input to each of rows as
illustrated as an erasing pulse 1 and may be retained by a
capacitance unit during the erasing period or an H level may be
input all through the erasing period as illustrated as an erasing
pulse 2. The pulses shown in FIG. 10(B) are used in the case where
both of the switching transistor and the erasing transistor are of
the N-type, and, in the case where both of the switching transistor
and the erasing transistor are of the P-type, the H level and the L
level of the pulses shown in FIG. 10(B) are reversed.
Example 6
[0120] The display device using the light-emitting device of the
invention can be used in display portions of various electronic
apparatuses. In particular, the display device of the invention is
desirably applied to a mobile device that preferably consumes less
power.
[0121] Electronic apparatuses using the display device of the
invention include a portable information terminal (a cellular
phone, a mobile computer, a portable game machine, an electronic
book, and the like), a video camera, a digital camera, a goggle
display, a display device, a navigation system, and the like.
Specific examples of these electronic apparatuses are shown in
FIGS. 6A to 6D.
[0122] FIG. 6A illustrates a display device which includes a
housing 6001, an audio output portion 6002, a display portion 6003,
and the like. The light-emitting device of the invention can be
applied to the display portion 6003. Note that the display device
includes all the information display devices for personal
computers, television broadcast reception, advertisement, and the
like.
[0123] FIG. 6B illustrates a mobile computer which includes a main
body 6101, a stylus 6102, a display portion 6103, operation keys
6104, an external interface 6105, and the like. The light-emitting
device of the invention can be applied to the display portion
6103.
[0124] FIG. 6C illustrates a game machine which includes a main
body 6201, a display portion 6202, operation keys 6203, and the
like. The light-emitting device of the invention can be applied to
the display portion 6202.
[0125] FIG. 6D illustrates a cellular phone which includes a main
body 6301, an audio output portion 6302, a display portion 6304,
operation switches 6305, an antenna 6306, and the like. The
light-emitting device of the invention can be applied to the
display portion 6304.
[0126] As described above, an application range of the
light-emitting device of the invention is so wide that the
invention can be applied to electronic apparatuses in various
fields.
Example 7
[0127] Using FIG. 11, a sectional structure of a pixel of the
light-emitting device of 10 this invention will be described. Shown
in FIG. 11 is a driving transistor 7001 which is formed on a
substrate 7000. The driving transistor 7001 is covered with a first
interlayer insulating film 7002, and a color filter 7003 formed
from a resin or the like and a wiring 7004 electrically connected
to a drain of the driving transistor 7001 via a contact hole are
formed on the first interlayer insulating film 7002. A current
control transistor may be provided between the driving transistor
7001 and the wiring 7004.
[0128] A second interlayer insulating film 7005 is formed on the
first interlayer insulating film 7002 in such a manner as to cover
the color filter 7003 and the wiring 7004. A silicon oxide film, a
silicon nitride film, or a silicon oxide nitride film formed by
plasma CVD or sputtering or a stack of these films formed by plasma
CVD or sputtering may be used as the first interlayer insulating
film 7002 or the second interlayer insulating film 7005. Also, a
film obtained by stacking a silicon oxide nitride film wherein a
molar ratio of oxygen is higher than that of nitrogen on a silicon
oxide nitride film wherein a molar ratio of nitrogen is higher than
that of oxygen may be used as the first interlayer insulating film
7002 or the second interlayer insulating film 7005. Alternatively,
an organic resin film may be used as the first interlayer
insulating film 7002 or the second interlayer insulating film
7005.
[0129] A wiring 7006 electrically connected to the wiring 7004 via
a contact hole is formed on the second interlayer insulating film
7005. A part of the wiring 7006 functions as an anode of a
light-emitting element. The wiring 7006 is formed in such a manner
as to overlap with the color filter 7003 with the second interlayer
insulating film 7005 being sandwiched therebetween.
[0130] An organic resin film 7008 to be used as a partition is
formed on the second interlayer insulating film 7005. The organic
resin film has an opening, and the wiring 7006 functioning as the
anode, an electro-luminescent layer 7009, and a cathode 7010 are
formed in such a manner as to overlap with one another on the
opening to form the light-emitting element 7011. The
electro-luminescent layer 7009 is formed of a single light-emitting
layer or has a structure that a plurality of layers including the
light-emitting layer are stacked. A protection film may be formed
on the organic resin film 7008 and the cathode 7010. In this case,
a film less subject to permeation of substances promoting
deterioration of the light-emitting element, such as moisture,
oxygen, etc., as compared with other insulating films is used as
the protection film. Typically, it is desirable to use a DLC film,
a carbon nitride film, a silicon nitride film formed by RF
sputtering, or the like as the protection film. It is possible to
use a film obtained by stacking the film less subject to the
permeation of substances such as moisture and oxygen and a film
subject to the permeation of substances such as moisture and oxygen
as compared with the formerly mentioned film as the protection
film.
[0131] The organic resin film 7008 is heated under a vacuum
atmosphere so as to eliminate absorbed moisture, oxygen, and so
forth before forming the electro-luminescent layer 7009. More
specifically, a heat treatment at 100.degree. C. to 200.degree. C.
is performed under a vacuum atmosphere for about 0.5 to 1 hour. It
is desirable to perform the heat treatment under 3.times.10.sup.-7
Torr or less, most desirably under 3.times.10.sup.-8 Torr, if
possible. In the case of forming the electro-luminescent layer
after subjecting the organic resin film to the heat treatment under
the vacuum atmosphere, it is possible to improve reliability by
maintaining the vacuum atmosphere until shortly before the film
formation.
[0132] It is desirable to round an edge of the opening of the
organic resin film 7008 so that the electro-luminescent layer 7009
formed on the organic resin film 7008 in the partially overlapping
manner is not pierced at the edge. More specifically, it is
desirable that a radius of curvature of a curve of a section of the
opening of the organic resin film is from 0.2 to 2 .mu.m.
[0133] With the above-described constitution, it is possible to
achieve a satisfactory coverage of the electro-luminescent layer
and the cathode to be formed afterward and to prevent the wiring
7006 and the cathode 7010 from being short-circuited in the hole
formed in the electro-luminescent layer 7009. Also, by mitigating
stress of the electro-luminescent layer 7009, it is possible to
reduce a defect called shrinkage, which is a reduction in light
emission area, thereby enhancing the reliability.
[0134] In addition, in the example shown in FIG. 11, a positive
photosensitive acryl resin is used as the organic resin film 7008.
Photosensitive organic resins are broadly divided into a positive
type in which a portion exposed to energy rays such as light,
electrons, ions is removed and a negative type in which the exposed
portion remains. The negative type organic resin film may be used
in this invention. Also, the organic resin film 7008 may be formed
by using photosensitive polyimide. In the case of forming the
organic resin film 7008 using a negative type acryl, the edge of
the opening has a section in the form of the letter "S". Here, it
is desirable to set a radius of curvature of each of an upper end
and a lower end of the opening to 0.2 to 2 .mu.m.
[0135] A transparent electro-conductive film may be used for the
wiring 7006. Usable examples of the transparent electro-conductive
film is an ITO and a transparent electro-conductive film obtained
by mixing 2 to 20% of indium oxide with zinc oxide (ZnO). In FIG.
11, the ITO is used as the wiring 7006. The wiring 7006 may be
polished by wiping using a CMP method and a polyvinyl alcohol-based
porous material so as to smooth out its surface. Also, the surface
of the wiring 7006 may be irradiated with ultraviolet rays or
treated with oxygen plasma after undergoing the polishing using the
CMP method.
[0136] Any known material may be used for the cathode 7010 so far
as it is an electro-conductive film having a thickness capable of
transmitting light and a small work function. Preferred examples of
the material are Ca, Al, CaF, MgAg, AlLi, and the like. In order to
obtain light from the cathode side, a method of using ITO which is
reduced in work function by an addition of Li may be employed in
addition to a method of thinning the film thickness. A structure of
the light-emitting element used in this invention is not
particularly limited so far as it enables light emission from both
of the anode side and the cathode side.
[0137] In practice, it is preferable to perform packaging
(enclosure) with a protection film (laminate film, ultraviolet
curing resin film, etc.) or a transparent glazing material 7012
which is high in air tightness and less subject to degasification.
In the packaging, the reliability of the light-emitting element is
improved by maintaining an inside of the glazing material under an
inert atmosphere or disposing an moisture absorbent (e.g., barium
oxide) inside the glazing material. In this invention, the glazing
material 7012 may be provided with a color filter 7013.
[0138] Note that this invention is not limited to the
above-described manufacturing process and that it is possible to
use any known method for the manufacture.
Example 8
[0139] In this example, a pixel structure in the case where
positions of the driving transistor 202 and the current control
transistor 203 are exchanged in the pixel shown in FIG. 2 will be
described.
[0140] Shown in FIG. 12 is a circuit structure of the pixel of this
example. The elements and wirings shown in FIG. 2 are denoted by
the same reference numerals in FIG. 12. The pixel shown in FIG. 12
and the pixel shown in FIG. 2 has a common point that the current
supplied from the first power line Vi (i=1 to x) is supplied to the
light-emitting element 204 as the drain current of the driving
transistor 202 and the current control transistor 203. But the
pixel shown in FIG. 12 is different from the pixel shown in FIG. 2
in that the source of the driving transistor 202 is connected to
the first power line Vi (i=1 to x), while the drain of the current
control transistor is connected to the pixel electrode of the
light-emitting element 204.
[0141] A gate/source voltage Vgs of the driving transistor 202 is
fixed by connecting the source of the driving transistor 202 to the
first power line Vi as described in this example. That is, the
gate/source voltage Vgs of the driving transistor 202 operating in
the saturation area does not change and remains to be fixed even if
the light-emitting element 204 is degraded. Therefore, in this
example, it is possible to prevent a fluctuation in drain current
of the driving transistor 202 operating in the saturation area even
if the light-emitting element 204 is degraded.
Example 9
[0142] In this example, one example of a top view of the pixel
shown in FIG. 12 will be described. Note that a resistance is
provided between the pixel electrode of the light-emitting element
204 and the drain of the current control transistor 203 in the
pixel shown in FIG. 12 will be described in this example. Shown in
FIG. 13 is the top view of the pixel of this example.
[0143] Denoted by 5101 is a signal line, denoted by 5102 is a first
power line, denoted by 5111 is a second power line, denoted by 5104
is a first scan line, and denoted by 5103 is a second scan line. In
this example, the signal line 5101, the first power line 5102, and
the second power line 5111 are formed from an identical
electro-conductive film, and the first scan line 5104 and the
second scan line 5103 are formed from an identical
electro-conductive film. Denoted by 5105 is a switching transistor,
and a part of the first scan line 5104 functions as a gate
electrode of the switching transistor 5105. Denoted by 5106 is an
erasing transistor, and a part of the second scan line 5103
functions as a gate electrode of the erasing transistor 5106.
Denoted by 5107 is a driving transistor, and denoted by 5108 is a
current control transistor. Denoted by 5112 is a capacitance
element, and denoted by 5113 is a resistance formed from a
semiconductor film. The driving transistor 5107 has a wound active
layer used for maintaining an L/W thereof at a value larger than
that of the current control transistor 5108. For instance, the size
of the driving transistor 5107 may be set to L=200 nm and W=4 nm,
while the size of the current control transistor 5108 may be set to
L=6 nm and W=12 nm. Denoted by 5109 is a pixel electrode, and light
is emitted in an area (light-emitting area) where the pixel
electrode 5109 overlaps with an electro-luminescent layer (not
shown) and a cathode (not shown).
[0144] In the case of forming the pixel electrode 5109 by forming
an electro-conductive film and then patterning the
electro-conductive film, it is possible to prevent the driving
transistor 5107 from being destroyed due to a sharp change in
potential of the drain of the driving transistor 5107 caused by an
electric charge charged on the electro-conductive film by using the
resistance 5113. Also, it is possible to use the resistance 5113 as
an electrostatic countermeasure until a deposition of an EL.
[0145] In addition, it is needless to say that the top view of this
invention is described only by way of example and that the
invention is not limited thereto.
Example 10
[0146] In this example, a pixel structure when pixels using the
first scan line Gaj (j=1 to y) or the second scan line Gej (j =1 to
y) further use the second power line Wj (i=1 to x) will be
described using the pixel shown in FIG. 2.
[0147] A circuit diagram of the pixels of this example is shown in
FIG. 14(A). The elements and the wirings shown in FIG. 2 are
denoted by same reference numerals in FIG. 14(A). Note that the
pixels using the first scan line Gaj (j=1 to y) and the second scan
line Gej (j=1 to y) in common further use the second power line Wj
(i=1 to x) in common. The second power line Wj (i=1 to x)
intersects with the signal line Si (i=1 to x) and the first power
line Vi (i=1 to x), and the pixels using the second scan line Gej
(j=1 to y) in common has signal lines Si (i=1 to x) which are
different from one another.
[0148] Shown in FIG. 14(B) is a pixel structure in the case of
employing a method of adjusting a white balance by applying
different voltages to the gates of the driving transistors 202
depending on a red pixel, a green pixel, and a blue pixel.
Referring to FIG. 14(B), in a pixel 210 corresponding to red, a
second power line Wrj for red (R) is connected to the gate of the
driving transistor 202. In a pixel 211 corresponding to green, a
second power line Wgj for green (G) is connected to the gate of the
driving transistor 202. In a pixel 212 corresponding to blue, a
power line Wbj for blue (B) is connected to the gate of the driving
transistor 202.
Example 11
[0149] In this example, a pixel structure in the case of providing
a resistance between a drain of the driving transistor 202 and a
light-emitting element will be described using the pixels shown in
FIGS. 14(A) and 14(B).
[0150] Shown in FIG. 15(A) is the pixel structure in which the
pixel shown in FIG. 14(A) is provided with a resistance. The
elements and the wirings shown in FIG. 14(A) are denoted by the
same reference numerals in FIG. 15(A). FIG. 15(A) is different from
FIG. 14(A) in that a resistance 209 is provided between the pixel
electrode of the light-emitting element 104 and the drain of the
driving transistor 202.
[0151] Shown in FIG. 15(B) is a pixel structure in the case of
employing a method of adjusting a white balance by applying
different voltages to the gates of the driving 20 transistors 202
depending on a red pixel, a green pixel, and a blue pixel.
Referring to FIG. 15(B), in a pixel 210 corresponding to red, a
second power line Wrj for red (R) is connected to the gate of the
driving transistor 202. In a pixel 211 corresponding to green, a
second power line Wgj for green (G) is connected to the gate of the
driving transistor 202. In a pixel 212 corresponding to blue, a
power line Wbj for blue (B) is connected to the gate of the driving
transistor 202.
[0152] In the case of forming the pixel electrode by forming an
electro-conductive film and then patterning the electro-conductive
film, it is possible to prevent the driving transistor 202 from
being destroyed due to a sharp change in potential of the drain of
the driving transistor 202 caused by an electric charge charged on
the electro-conductive film by using the resistance 209. Also, it
is possible to use the resistance 5209 as an electrostatic
countermeasure until a deposition of an EL.
[0153] Next, one example of a top view of the pixel shown in FIG.
15(A) will be described. The top view of this example is shown in
FIG. 16.
[0154] Denoted by 5201 is a signal line, denoted by 5202 is a first
power line, denoted by 5211 is a second power line, denoted by 5204
is a first scan line, and denoted by 5203 is a second scan line. In
this example, the signal line 5201, and the first power line 5202
are formed from an identical electro-conductive film, and the first
scan line 5204, the second scan line 5203, and the second power
line 5211 are formed from an identical electro-conductive film.
Denoted by 5205 is a switching transistor, and a part of the first
scan line 5204 functions as a gate electrode of the switching
transistor 5205. Denoted by 5206 is an erasing transistor, and a
part of the second scan line 5203 functions as a gate electrode of
the erasing transistor 5206. Denoted by 5207 is a driving
transistor, and denoted by 5208 is a current control transistor.
Denoted by 5212 is a capacitance element, and denoted by 5213 is a
resistance formed from a semiconductor film. The driving transistor
5207 has a wound active layer used for maintaining an L/W thereof
at a value larger than that of the current control transistor 5208.
For instance, the size of the driving transistor 5207 may be set to
L=200 nm and W=4 nm, while the size of the current control
transistor 5208 may be set to L=6 nm and W=12 nm. Denoted by 5209
is a pixel electrode, and light is emitted in an area
(light-emitting area) where the pixel electrode 5209 overlaps with
an electro-luminescent layer (not shown) and a cathode (not
shown).
[0155] Next, one example of a top view of the pixel shown in FIG.
15(B) will be described. Shown in FIG. 17 is the pixel top view of
this example.
[0156] Denoted by 5301 is a signal line, denoted by 5302 is a first
power line, denoted by 5311r is a second power line corresponding
to a red pixel, denoted by 5311g is a second power line
corresponding to a green pixel, denoted by 5311b is a second power
line corresponding to a blue pixel, denoted by 5304 is a first scan
line, and denoted by 5303 is a second scan line. In this example,
the signal line 5301 and the first power line 5302 are formed from
an identical electro-conductive film, and the first scan line 5304,
the second scan line 5303, and the second power lines 5311r, 5311g,
5311b are formed from an identical electro-conductive film. Denoted
by 5305 is a switching transistor, and a part of the first scan
line 5304 functions as a gate electrode of the switching transistor
5305. Denoted by 5306 is an erasing transistor, and a part of the
second scan line 5303 functions as a gate electrode of the erasing
transistor 5306. Denoted by 5307 is a driving transistor, and
denoted by 5308 is a current control transistor. Denoted by 5312 is
a capacitance element, and denoted by 5313 is a resistance formed
from a semiconductor film. The driving transistor 5307 has a wound
active layer used for maintaining an L/W thereof at a value larger
than that of the current control transistor 5308. For instance, the
size of the driving transistor 5307 may be set to L=200 nm and W=4
nm, while the size of the current control transistor 5308 may be
set to L=6 nm and W=12 nm. Denoted by 5309 is a pixel electrode,
and light is emitted in an area (light-emitting area) where the
pixel electrode 5309 overlaps with an electro-luminescent layer
(not shown) and a cathode (not shown).
[0157] It is needless to say that the top view of this invention is
described only by way of example and that the invention is not
limited thereto.
[0158] Since the number of transistors included in one pixel is 4
in the light-emitting device of this invention, it is possible to
set a width across corner to 4 to 4.3 inches, a width of an
interlayer used as a partition for separating adjacent
light-emitting elements to 20 .mu.m, a VGA to (640.times.480) 200
dpi, and the size of the pixel to 45.times.135 .mu.m.
Example 12
[0159] Shown in FIG. 18(A) is a sectional view of a pixel in the
case where a driving transistor 9011 is of the N-type and light
emitted from a light-emitting element 9012 is ejected in a
direction of a cathode 9013. In FIG. 18(A), the cathode 9013 of the
light-emitting element 9012 is formed on a transparent
electro-conductive film 9017 electrically connected to a drain of
the driving transistor 9011, and an electro-luminescent layer 9014
and an anode 9015 are formed on the cathode 9013 in this order. A
shielding film 9016 for reflecting or shielding light is formed in
such a manner as to cover the anode 9015. Any known material may be
used for the cathode 9013 so far as it is an electro-conductive
film having a small work function and reflecting light. Preferred
examples of the material are Ca, Al, CaF, MgAg, AlLi, and the like.
Note that a thickness of the cathode 9013 is regulated to a value
which allows light to pass therethrough. For instance, an Al film
having a thickness of 20 nm may be used as the cathode 9013. The
electro-luminescent layer 9014 may be formed of either one of one
layer or a stack of a plurality of layers. The anode 9015 is not
required to transmit light, and a transparent electro-conductive
film such as ITO, ITSO, IZO obtained by mixing indium oxide with 2
to 20% of zinc oxide (ZnO), Ti, or TiN may be used for the anode
9015. A metal reflecting light, for example, may be used as the
shielding film 9016 without limitation thereto. A resin to which a
black pigment is added may be used as the shielding film 9016, for
example.
[0160] A portion at which the cathode 9013, the electro-luminescent
layer 9014, and the anode 9015 are overlapped with one another
corresponds to the light-emitting element 9012. In the case of the
pixel shown in FIG. 18(A), the light emitted from the
light-emitting element 9012 is ejected in a direction of the
cathode 9013 as indicated by an white arrow.
[0161] Shown in FIG. 18(B) is a sectional view of a pixel in the
case where a driving transistor 9031 is of the P-type and light
emitted from the light-emitting element 9032 is ejected in a
direction of a cathode 9035. Referring to FIG. 18(B), an anode 9033
of the light-emitting element 9032 is formed on a wiring 9036
electrically connected to a drain of the driving transistor 9031,
and an electro-luminescent layer 9034 and the cathode 9035 are
formed on the anode 9033 in this order. With such constitution,
when light has passed through the anode 9033, the light is
reflected by the wiring 9036. Any known material may be used for
the cathode 9035 so far as it is an electro-conductive film having
a small work function and reflecting light as is the case with FIG.
18(A). Note that a thickness of the cathode 9035 is regulated to a
value which allows light to pass therethrough. For instance, an Al
film having a thickness of 20 nm may be used as the cathode 9035.
The electro-luminescent layer 9034 may be formed of either one of
one layer or a stack of a plurality of layers, as is the case with
FIG. 18(A). The anode 9033 is not required to transmit light, and a
transparent electro-conductive film or Ti, or TiN may be used for
the anode 9033 as is the case with FIG. 18(A).
[0162] A portion at which the anode 9033, the electro-luminescent
layer 9034, and the cathode 9035 are overlapped with one another
corresponds to the light-emitting element 9032. In the case of the
pixel shown in FIG. 18(B), the light emitted from the
light-emitting element 9032 is ejected in a direction of the
cathode 9035 as indicated by an white arrow
[0163] In addition, though the structure that the driving
transistor is electrically connected to the light-emitting element
is described in this example, a current control transistor may be
connected between the driving transistor an the light-emitting
element.
Example 13
[0164] In this example, a sectional structure of a pixel in the
case where each of a driving transistor and a current control
transistor is of a bottom gate type will be described.
[0165] The transistor to be used in this invention may be formed
from amorphous silicon. Since the transistor formed from the
amorphous silicon contributes to an elimination of a process of
crystallization, it is possible to simplify a manufacturing method
and to reduce a cost. Note that a P-type amorphous silicon
transistor is suitably used for the pixel of this invention since
it has a higher mobility as compared with an N-type amorphous
silicon transistor. In this example, a sectional structure of a
pixel in the case of using the N-type driving transistor will be
described.
[0166] Shown in FIG. 19(A) is a sectional view of a pixel of this
example. Denoted by 6501 is a driving transistor and denoted by
6502 is a current control transistor. The driving transistor 6501
has a gate electrode 6503 formed on a substrate 6500 having an
isolating surface, a gate insulating film 6504 formed on the
substrate 6500 in such a manner as to cover the gate electrode
6503, and a semiconductor film 6505 formed at a position
overlapping with the gate electrode 6503 with the gate insulating
film being sandwiched therebetween. The semiconductor film 6505 has
an impurity area 6506a and 6506b functioning as a source and a
drain and having impurity for imparting an electro-conductivity.
The impurity area 6506a is connected to a wiring 6508.
[0167] The current control transistor 6502 has, like the driving
transistor 6501, a gate electrode 6510 formed on the substrate 6500
having the isolating surface, the gate insulating film 6504 formed
on the substrate 6500 in such a manner as to cover the gate
electrode 6510, and a semiconductor film 6511 formed at a position
overlapping with the gate electrode 6510 with the gate insulating
film 6504 being sandwiched therebetween. The semiconductor film
6511 has an impurity area 6512a and 6512b functioning as a source
and a drain and having impurity for imparting electro-conductivity.
The impurity area 6512a is connected, via a wiring 6513, to the
impurity area 6506b included in the driving transistor 6501.
[0168] The driving transistor 6501 and the current control
transistor 6502 are covered with a protection film 6507 formed from
an insulating film. The wiring 6508 is connected to an anode 6509
via a contact hall formed on the protection film 6507. The driving
transistor 6501, the current control transistor 6502, and the
protection film 6507 are covered with an interlayer insulating film
6520. The interlayer insulating film 6520 has an opening, and the
anode 6509 is exposed in the opening. An electro-luminescent layer
6521 and a cathode 6522 are formed on the anode 6509.
[0169] In addition, the example in which the driving transistor and
the current control transistor are of the N-type is described with
reference to FIG. 19(A), they may be of the P-type. In this case,
P-type impurity is used for controlling a threshold value of the
driving transistor.
Example 14
[0170] In this example, one example of a top view of the pixel
shown in FIG. 2 will be described. The pixel top view of this
example is shown in FIG. 20.
[0171] Denoted by 5401 is a signal line, denoted by 5402 is a first
power line, denoted by 5411a and 5411b are second power lines,
denoted by 5404 is a first scan line, and denoted by 5403 is a
second scan line. In this example, the signal line 5401, the first
power line 5402, and the second power line 5411a are formed from an
identical electro-conductive film, and the first scan line 5404,
the second scan line 5403, and the second power line 5411b are
formed from an identical electro-conductive film. Denoted by 5405
is a switching transistor, and a part of the first scan line 5404
functions as a gate electrode of the switching transistor 5405.
Denoted by 5406 is an erasing transistor, and a part of the second
scan line 5403 functions as a gate electrode of the erasing
transistor 5406. Denoted by 5407 is a driving transistor, and
denoted by 5408 is a current control transistor. Denoted by 5412 is
a capacitance element, and denoted by 5413 is a resistance formed
from a semiconductor film. The driving transistor 5407 has a wound
active layer used for maintaining an L/W thereof at a value larger
than that of the current control transistor 5408. For instance, the
size of the driving transistor 5407 may be set to L=200 nm and W=4
nm, while the size of the current control transistor 5408 may be
set to L=6 nm and W=12 nm. Denoted by 5409 is a pixel electrode,
and light is emitted in an area (light-emitting area) 5410 where
the pixel electrode 5409 overlaps with an electro-luminescent layer
(not shown) and a cathode (not shown).
[0172] It is needless to say that the top view of this invention is
described only by way of example and that the invention is not
limited thereto.
* * * * *