U.S. patent application number 15/426399 was filed with the patent office on 2018-01-18 for semiconductor memory device for performing a post package repair operation and operating method thereof.
The applicant listed for this patent is SK hynix Inc.. Invention is credited to Young-Bo SHIM.
Application Number | 20180019024 15/426399 |
Document ID | / |
Family ID | 60935545 |
Filed Date | 2018-01-18 |
United States Patent
Application |
20180019024 |
Kind Code |
A1 |
SHIM; Young-Bo |
January 18, 2018 |
SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING A POST PACKAGE REPAIR
OPERATION AND OPERATING METHOD THEREOF
Abstract
A semiconductor memory device includes a fuse array circuit
including a row fuse region and a column fuse region, and suitable
for outputting fuse information from row fuse sets and from column
fuse sets and outputting programmed row and column addresses as row
and column fail data, during a boot-up operation; a fuse array
control circuit suitable for storing a fail address based on a fail
cell information during a repair operation, searching unused fuse
sets to from the row fuse region and the column fuse region based
on the fuse information during the boot-up operation, and
controlling the fail address to be programmed in the unused fuse
sets during a rupture operation; and a row and column redundancy
circuit suitable for performing a row or column redundancy
operation in correspondence to the row and column fail data.
Inventors: |
SHIM; Young-Bo;
(Gyeonggi-do, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SK hynix Inc. |
Gyeonggi-do |
|
KR |
|
|
Family ID: |
60935545 |
Appl. No.: |
15/426399 |
Filed: |
February 7, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 17/18 20130101;
G11C 17/16 20130101; G11C 29/787 20130101; G11C 2029/4402
20130101 |
International
Class: |
G11C 29/00 20060101
G11C029/00; G11C 17/18 20060101 G11C017/18; G11C 17/16 20060101
G11C017/16 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 18, 2016 |
KR |
10-2016-0090840 |
Claims
1. A semiconductor memory device comprising: a fuse array circuit
including a row fuse region which includes a plurality of row fuse
sets each for programming a row address of a fail cell and a column
fuse region which includes a plurality of column fuse sets each for
programming a column address of a fail cell, the fuse array circuit
being suitable for outputting fuse information from the row fuse
sets and from the column fuse sets and outputting programmed a row
address as a row fail data and a column address as a column fail
data, during a boot-up operation; a fuse array control circuit
suitable for storing a fail address based on fail cell information
during a repair operation, searching unused fuse sets from the row
fuse region and the column fuse region based on the fuse
information during the boot-up operation, and controlling the fail
address to be programmed in the unused fuse sets during a rupture
operation; and a row and column redundancy circuit suitable for
performing a row redundancy or column redundancy operation in
correspondence to the row fail data and the column fail data.
2. The semiconductor memory device according to claim 1, wherein
the fuse information include information on whether a corresponding
row fuse set is already used and information on whether the
corresponding row fuse set is impossible to use, and include
information on whether a corresponding column fuse set is already
used and information on whether the corresponding column fuse set
is impossible to use.
3. The semiconductor memory device according to claim 1, wherein
the fuse array control circuit stores the searched unused fuse sets
as unused row fuse information of the row fuse region and unused
column fuse information of the column fuse region during the
boot-up operation, and selects and outputs one of the unused row
fuse information and the unused column fuse information according
to a row and column select signal during the rupture operation.
4. The semiconductor memory device according to claim 1, wherein
the fuse array control circuit controls the rupture operation not
to be performed, when unused fuse sets of the row fuse region and
the column fuse region searched based on the fuse information do
not exist.
5. The semiconductor memory device according to claim 1, wherein
the fuse array control circuit comprises: an address latch block
suitable for storing the fail address including a row address, a
column address, a bank address and mat information of a fail cell
in response to an active signal and a write signal, during the
repair operation; a control signal generation block suitable for
sequentially generating a boot-up signal and a rupture signal in
response to the active signal and the write signal during the
repair operation; a boot-up control block suitable for searching
the row fuse region and the column fuse region corresponding to the
fail address in response to the boot-up signal, storing unused fuse
information of the searched row fuse region and column fuse region,
and outputting unused fuse information corresponding to a row and
column select to signal; a repair data selection block suitable for
receiving the fail address and generating a repair address
corresponding to the row and column select signal; and a rupture
control block suitable for controlling the repair address to be
programmed in a row fuse set or a column fuse set corresponding to
the unused fuse information, in response to the rupture signal.
6. The semiconductor memory device according to claim 5, wherein
the address latch circuit stores the bank address and the row
address in response to the active signal and stores the column
address and the mat information in response to the write signal,
during the repair operation.
7. The semiconductor memory device according to claim 5, wherein
the boot-up control block outputs an overflow signal when the
unused fuse information of the row fuse region and the column fuse
region searched based on the fuse information do not exist, and
wherein the rupture control block disables and outputs the rupture
control signal in response to the overflow signal.
8. The semiconductor memory device according to claim 5, wherein
the fuse array control circuit further comprises: a clock
generation block suitable for generating a clock signal which
toggles, when the boot-up signal or the rupture signal is
enabled.
9. The semiconductor memory device according to claim 8, wherein
the control signal generation block comprises: a mode clock signal
generation unit suitable for receiving the clock signal, and
generating a boot-up clock signal which toggles during an enable
period of the boot-up signal and a rupture clock signal which
toggles during an enable period of the rupture signal; a boot-up
control signal generation unit suitable for generating the boot-up
signal which is enabled in response to the active signal, the write
signal or a rupture stop signal and is disabled in response to a
boot-up stop signal and generating the boot-up stop signal after
the boot-up clock signal toggles for a predetermined period, during
the repair operation; and a rupture control signal generation unit
suitable for generating the rupture signal which is enabled in
response to the boot-up stop signal and is disabled in response to
the rupture stop signal and generating the rupture stop signal
after the rupture clock signal toggles for a predetermined
period.
10. The semiconductor memory device according to claim 8, wherein
the boot-up control block comprises: a counter suitable for
counting the clock signal and generating a counting signal, when
the boot-up signal is enabled; a fail region search unit suitable
for searching the row fuse region and the column fuse region
corresponding to the fail address and generating a row region
signal and a plurality of column region signals, in response to the
counting signal; and a fuse set latch unit suitable for storing the
counting signal as the unused fuse information based on the row
region signal, the plurality of column region signals and the fuse
information, and outputting the stored unused fuse information in
response to an up and down mat signal and the row and column select
signal.
11. The semiconductor memory device according to claim 10, wherein
the fail region search unit comprises: a row region search section
suitable for searching the row fuse region corresponding to the
fail address and outputting the row region signal, in response to
the counting signal; and a column region search section suitable
for searching the column fuse region corresponding to the fail
address and outputting the plurality of column region signals, in
response to the counting signal.
12. The semiconductor memory device according to claim 11, wherein
the column region search section comprises: an up mat signal
generation part suitable for up-counting the mat information of the
fail address and generating up mat information; a down mat signal
generation part suitable for down-counting the mat information of
the fail address and generating down mat information; a first
column region search part suitable for searching the column fuse
region corresponding to the bank address and the mat information of
the fail address and outputting a first column region signal, in
response to the counting signal; a second column region search part
suitable for searching the column fuse region corresponding to the
bank address and the up mat information and outputting a second
column region signal, in response to the counting signal; and a
third column region search part suitable for searching the column
fuse region corresponding to the bank address and the down mat
information and outputting a third column region signal, in
response to the counting signal.
13. The semiconductor memory device according to claim 10, wherein
the fuse set latch unit comprises: an input control section
suitable for generating a row input control signal based on the row
region signal and the fuse information, to and generating a
plurality of column input control signals based on the plurality of
column region signals and the fuse information; an output control
section suitable for combining the up and down mat signal and the
row and column select signal, and generating a row select signal
and a plurality of column select signals; a row latch section
suitable for storing a first bit group of the counting signal as
unused row fuse information in response to the row input control
signal, and outputting the stored unused row fuse information in
response to the row select signal; and a plurality of column latch
sections suitable for storing a second bit group of the counting
signal as unused column fuse information in response to the
plurality of column input control signals, and outputting the
stored unused column fuse information in response to the plurality
of column select signals.
14. The semiconductor memory device according to claim 13, wherein
the input control section comprises: a row pulse generation part
suitable for receiving row fuse information among the fuse
information, and generating a row pulse signal; a column pulse
generation part suitable for receiving column fuse information
among the fuse information, and generating a column pulse signal; a
first input control signal generation part suitable for generating
the row input control signal in response to the row pulse signal
and the row region signal; and a second input control signal
generation part suitable for generating the plurality of column
input control signals in response to the column pulse signal and
the plurality of column region signals.
15. The semiconductor memory device according to claim 13, wherein
the fuse set latch unit further comprises: an overflow signal
generation section suitable for generating the overflow signal by
selecting the row input control signal in response to the row
select signal and selecting a first column input control signal in
response to a first column select signal; and a mat signal
generation section suitable for generating a selected mat address
by selecting one of the mat information, the up mat information and
the down mat information based on second and third column select
signals.
16. A semiconductor memory device comprising: a fuse array circuit
including a row fuse region which includes a plurality of row fuse
sets, each for programming a row address of a fail cell, and a
column fuse region which includes a plurality of column fuse sets,
each for programming a column address of the fail cell; an address
latch block suitable for storing a fail address including a row
address, a column address, a bank address and mat information in
response to a repair mode signal; a control signal generation block
suitable for generating a boot-up signal and a rupture signal in
response to an active signal and a write signal, in response to the
repair mode signal; a fail region search unit suitable for
searching the row fuse region and the column fuse region
corresponding to the fail address and generating a row region
signal and a plurality of column region signals, in response to a
counting signal which is generated by counting a clock signal, when
the boot-up signal is enabled; a fuse set latch unit suitable for
storing unused row fuse information and unused column fuse
information based on the row region signal, the plurality of column
region signals and fuse information outputted from the fuse array
circuit, and selectively outputting the stored unused row or column
fuse information in response to an up and down mat signal and a row
and column select signal; and a rupture control block suitable for
controlling the fail address to be programmed in a row fuse set or
a column fuse set corresponding to the unused row or column fuse
information, in response to the rupture signal.
17. The semiconductor memory device according to claim 16, wherein
the repair mode signal is outputted from a mode register (MRS) in a
post package repair mode.
18. The semiconductor memory device according to claim 16, wherein
the fuse set latch unit outputs an overflow signal when the unused
row fuse information or the unused column fuse information does not
exist, and wherein the rupture control block disables and outputs
the rupture control signal in response to the overflow signal.
19. The semiconductor memory device according to claim 16, wherein
the address latch block stores the bank address and the row address
in response to the active signal and stores the column address and
the mat information in response to the write signal, when the
repair mode signal is enabled.
20. The semiconductor memory device according to claim 16, wherein
the fail region search unit comprises: a row region search section
suitable for searching the row fuse region corresponding to the
fail address and outputting the row region signal, in response to
the counting signal; an up mat signal generation part suitable for
up-counting the mat information of the fail address and generating
up mat information; a down mat signal generation part suitable for
down-counting the mat information of the fail address and
generating down mat information; a first column region search part
suitable for searching the column fuse region corresponding to the
bank address and the mat information of the fail address and
outputting a first column region signal, in response to the
counting signal; a second column region search part suitable for
searching the column fuse region corresponding to the bank address
and the up mat information and outputting a second column region
signal, in response to the counting signal; and a third column
region search part suitable for searching the column fuse region
corresponding to the bank address and the down mat information and
outputting a third column region signal, in response to the
counting signal.
21. The semiconductor memory device according to claim 16, wherein
the fuse set latch unit comprises: an input control section
suitable for generating a row input control signal based on the row
region signal and the fuse information, and generating a plurality
of column input control signals based on the plurality of column
region signals and the fuse information; an output control section
suitable for combining the up and down mat signal and the row and
column select signal, and generating a row select signal and a
plurality of column select signals; a row latch section suitable
for storing a first bit group of the to counting signal as unused
row fuse information in response to the row input control signal,
and outputting the stored unused row fuse information in response
to the row select signal; and a plurality of column latch sections
suitable for storing a second bit group of the counting signal as
unused column fuse information in response to the plurality of
column input control signals, and outputting the stored unused
column fuse information in response to the plurality of column
select signals.
22. The semiconductor memory device according to claim 21, wherein
the fuse set latch unit further comprises: an overflow signal
generation section suitable for generating the overflow signal by
selecting the row input control signal in response to the row
select signal and selecting a first column input control signal in
response to a first column select signal; and a mat signal
generation section suitable for generating a selected mat address
by selecting one of the mat information, the up mat information and
the down mat information based on second and third column select
signals.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority under 35 U.S.C. .sctn.119
to Korean Patent Application No. 10-2016-0090840 filed on Jul. 18,
2016 in the Korean Intellectual Property Office, the disclosure of
which is incorporated herein by reference in its entirety.
TECHNICAL FIELD
[0002] Exemplary embodiments relate to a semiconductor design
technology, and more particularly, to a semiconductor memory device
capable of performing a post package repair operation and an
operating method thereof.
DISCUSSION OF THE RELATED ART
[0003] In general, in a semiconductor memory device such as a
dynamic random access memory (DRAM), after design and fabrication,
the pass or fail of a chip is determined through a test at a wafer
level (hereinafter, referred to as a `wafer test`) and a test after
packaging (hereinafter, referred to as a `post package test`).
[0004] Typically, when a few or even just one among a number of
memory cells which are tested in a semiconductor memory device
fail, the semiconductor memory device cannot perform properly and
is considered a defective product which should be discarded.
Discarding a semiconductor memory device as a defective product in
the case where only a small number of memory cells fail, is
inefficient and decreases the yield.
[0005] To mitigate this, currently, a method is used, in which
redundancy memory cells are provided in a semiconductor memory
device and when the failed memory cells can be identified and
replaced with redundancy memory cells through a wafer test process
and a post package test process the semiconductor memory device is
to handled as a good product. The operation of replacing failed
memory cells with redundancy memory cells through the post package
test process is referred to as post package repair. The yield of a
semiconductor memory device may be improved substantially with the
use of a post package repair.
[0006] According to existing post package repair methods, only row
repair is supported. Therefore, in the case where a column-oriented
fail occurs, repair is impossible and thus the yield may decrease.
Hence, a post package repair scheme capable of supporting both row
repair and column repair is demanded in the art.
SUMMARY
[0007] Various embodiments are directed to a semiconductor memory
device capable of supporting both row repair and column repair
depending on the type of a fail when performing post package
repair, and an operating method thereof.
[0008] In an embodiment, a semiconductor memory device may include:
a fuse array circuit including a row fuse region which includes a
plurality of row fuse sets each for programming a row address of a
fail cell and a column fuse region which includes a plurality of
column fuse sets each for programming a column address of a fail
cell, the fuse array circuit being suitable for outputting fuse
information from the row fuse sets and from the column fuse sets
and outputting programmed a row address as a row fail data and a
column address as a column fail data, during a boot-up operation; a
fuse array control circuit suitable for storing a fail address
based on fail cell information during a repair operation, searching
unused fuse sets from the row fuse region and the column fuse
region based on the fuse information during the boot-up operation,
and controlling the fail address to be programmed in the unused
fuse sets during a rupture operation; and a row and column
redundancy circuit suitable for performing a row redundancy or
column redundancy operation in correspondence to the row fail data
and the column fail data.
[0009] In an embodiment, a semiconductor memory device may include:
a fuse array circuit including a row fuse region which includes a
plurality of row fuse sets, each for programming a row address of a
fail cell, and a column fuse region which includes a plurality of
column fuse sets, each for programming a column address of the fail
cell; an address latch block suitable for storing a fail address
including a row address, a column address, a bank address and mat
information in response to a repair mode signal; a control signal
generation block suitable for generating a boot-up signal and a
rupture signal in response to an active signal and a write signal,
in response to the repair mode signal; a fail region search unit
suitable for searching the row fuse region and the column fuse
region corresponding to the fail address and generating a row
region signal and a plurality of column region signals, in response
to a counting signal which is generated by counting a clock signal,
when the boot-up signal is enabled; a fuse set to latch unit
suitable for storing unused row fuse information and unused column
fuse information based on the row region signal, the plurality of
column region signals and fuse information outputted from the fuse
array circuit, and selectively outputting the stored unused row or
column fuse information in response to an up and down mat signal
and a row and column select signal; and a rupture control block
suitable for controlling the fail address to be programmed in a row
fuse set or a column fuse set corresponding to the unused row or
column fuse information, in response to the rupture signal.
[0010] In an embodiment, a method for operating a semiconductor
memory device including a fuse array circuit including a row fuse
region which includes a plurality of row fuse sets, each for
programming a row address of a fail cell and a column fuse region
which includes a plurality of column fuse sets, each for
programming a column address of a fail address, storing a fail
address based on fail cell information in a post package repair
mode; performing a first boot-up operation to search unused fuse
sets of the row fuse region and the column fuse region based on
fuse information outputted from the fuse array circuit; performing
a rupture operation to program the fail address in the unused fuse
sets; performing a second boot-up operation to output fail data
programmed in the fuse array circuit; and performing a row
redundancy or column redundancy operation in correspondence to the
fail data.
[0011] The storing of the fail address may comprise: storing the
fail address including a row address, a column address, a bank
address and mat information of a fail cell in response to an active
signal and a write signal, in the post package repair mode.
[0012] The performing of the first boot-up operation may comprise:
generating a boot-up signal and a rupture signal in response to the
active signal and the write signal in the post package repair mode;
searching the row fuse region and the column fuse region
corresponding to the fail address, in response to the boot-up
signal; and storing unused fuse information of the row fuse region
and the column fuse region searched based on the fuse
information.
[0013] The searching of the row fuse region and the column fuse
region corresponding to the fail address, in response to the
boot-up signal, may comprise: counting a clock signal to generate a
counting signal, when the boot-up signal is enabled; searching the
row fuse region corresponding to the fail address to output a row
region signal, in response to the counting signal; generating up
mat information by up-counting the mat information of the fail
address, and down mat information by down-counting the mat
information; searching the column fuse region corresponding to the
bank address and the mat information of the fail address and
outputting a first column region signal, in response to the
counting signal; searching the column fuse region corresponding to
the bank address and the up mat information and outputting a second
column region signal, in response to the counting signal; and
searching the column fuse region corresponding to the bank address
and the down mat information and outputting a third column region
signal, in response to the counting signal.
[0014] After the performing of the first boot-up operation, the
method may further comprise: controlling the rupture operation not
to be performed, when unused fuse sets of the row fuse region and
the column fuse region searched based on the fuse information do
not exist.
[0015] The performing of the rupture operation may comprise:
outputting an unused fuse information in response to an up and down
mat signal and a row and column select signal; receiving the fail
address and generating a repair address corresponding to the row
and column select signal; and programming the repair address in a
row fuse set or a column fuse set corresponding to the unused fuse
information, in response to the rupture signal.
[0016] After the performing of the second boot-up operation, the
method may further comprise: reading the stored unused fuse
information through a data input/output (DQ) pad by applying a mode
register (MRS) command.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] These and other features and advantages of the present
invention will become apparent from the following detailed
description in reference to the accompanying drawings in which:
[0018] FIG. 1 is a block diagram illustrating a semiconductor
memory device in accordance with an embodiment of the present
invention.
[0019] FIG. 2 is a block diagram illustrating an example
configuration for a fuse array control circuit employed in the
semiconductor memory device of FIG. 1.
[0020] FIG. 3 is a block diagram illustrating an example
configuration for a control signal generation block employed in the
fuse array control circuit of FIG. 2.
[0021] FIGS. 4A and 4B are waveform diagrams illustrating an
operation of the control signal generation block shown in FIG.
3.
[0022] FIG. 5 is a block diagram illustrating an example
configuration for a boot-up control block employed in the fuse
array control circuit of FIG. 2.
[0023] FIG. 6 is a block diagram illustrating an example
configuration of a fail region search unit employed in the boot up
control block of FIG. 5.
[0024] FIG. 7 is a block diagram illustrating an example
configuration of a fuse set latch unit employed in the boot up
control block of FIG. 5.
[0025] FIG. 8A is a timing diagram illustrating a row repair
operation of a semiconductor memory device in accordance with an
embodiment of the present invention.
[0026] FIG. 8B is a flow chart of a row repair operation of a
semiconductor memory device in accordance with an embodiment of the
present invention.
[0027] FIG. 9A is a timing diagram illustrating a column repair
operation of a semiconductor memory device in accordance with an
embodiment of the present invention.
[0028] FIG. 9B is a flow chart of a column repair operation of a
semiconductor memory device in accordance with an embodiment of the
present invention.
DETAILED DESCRIPTION
[0029] Various embodiments will be described below in more detail
with reference to the accompanying drawings. The present invention
may, however, be embodied in different forms and should not be
construed as limited to the embodiments forth herein. Rather, these
embodiments are provided so that this disclosure will be thorough
and complete, and will fully convey the present invention to those
skilled in the art. Throughout the disclosure, like reference
numerals refer to like parts throughout the various figures and
embodiments of the present invention.
[0030] For the sake of convenience in explanation, illustration of
components related with a normal operation is omitted in the
drawings, and descriptions will be made mainly for components
related with a post package repair operation.
[0031] It is noted that the drawings are simplified schematics and
as such are not necessarily drawn to scale. In some instances,
various parts of the drawings may have been exaggerated in order to
more clearly illustrate certain features of the illustrated
embodiments.
[0032] It is further noted that in the following description,
specific details are forth for facilitating the understanding of
the present invention, however, the present invention may be
practiced without some of these specific details. Also, it is
noted, that well-known structures and/or processes may have only
been described briefly or is not described at all to avoid
obscuring the present disclosure with unnecessary well known
details.
[0033] It is also noted, that in some instances, as would be
apparent to those skilled in the relevant art, an element (also
referred to as a feature) described in connection with one
embodiment may be used singly or in combination with other elements
of another embodiment, unless specifically indicated otherwise.
[0034] Referring now to FIG. 1, a semiconductor memory device is
provided, in accordance with an embodiment of the present
invention.
[0035] Accordingly, the semiconductor memory device of FIG. 1, may
include a fuse array control circuit 100, a fuse array circuit 200,
and a row/column redundancy circuit 300.
[0036] The fuse array circuit 200 may include a row fuse region 210
which includes a plurality of row fuse sets (not shown) for
programming the row addresses of fail cells and a column fuse
region 220 which includes a plurality of column fuse sets (not
shown) for programming the column addresses of fail cells. The fuse
array circuit 200 may output row fuse information RF_EN, RF_DIS,
and column fuse information CF_EN, CF_DIS to the fuse array control
circuit 100 and output programmed row address and column address as
row fail data FS_RDATA<0:P> and column fail data
FS_CDATA<0:Q> to the row/column redundancy circuit 300, in a
boot-up operation. The fuse information RF_EN, RF_DIS, CF_EN and
CF_DIS include first information RF_EN on whether a corresponding
row fuse set is already used, second information RF_DIS on whether
the corresponding row fuse set is impossible to use, third
information CF_EN on whether a corresponding column fuse set is
already used, and fourth information CF_DIS on whether the
corresponding column fuse set is impossible to use. For reference,
the corresponding row or column fuse set which is impossible to use
means that the corresponding row or column fuse set is not properly
ruptured or does not output information therein due to a defect or
fail such as a bad connection.
[0037] The fuse array control circuit 100 may store a fail address
based on fail cell information in a post package repair mode,
search unused fuse sets of the row fuse region 210 and the column
fuse region 220 based on the fuse information RF_EN, RF_DIS, CF_EN
and CF_DIS outputted from the fuse array circuit 200 in the boot-up
operation, and control the fail address to be programmed in the
unused fuse sets, in a rupture operation. The fuse array control
circuit 100 may store the unused fuse sets searched in the boot-up
operation, as unused row fuse information of the row fuse region
210 and unused column fuse information of the column fuse region
220, and control a fail address to be programmed in the unused fuse
sets by selecting and outputting one of the unused row fuse
information and the unused column fuse information according to a
row/column select signal ROWCOL_SEL, in the rupture operation. When
there exists no unused fuse set in the row fuse region 210 and the
column fuse region 220 which are searched based on the fuse
informations RF_EN, RF_DIS, CF_EN and CF_DIS, the fuse array
control circuit 100 does not perform the rupture operation.
[0038] The row/column redundancy circuit 300 may perform row repair
or column repair in correspondence to the row fail data
FS_RDATA<0:P> or the column fail data FS_CDATA<0:Q>
outputted from the fuse array circuit 200.
[0039] The fuse array control circuit 100 may enter a post package
repair (PPR) mode in response to a PPR mode signal PPR_EN. The fuse
array control circuit 100 may receive a row address information
ROW<1:14>, a column address information COL<3:9>, a
bank information BANK<0:2>, a mat information RMAT<0:3>
and a mat region information DOCT in response to an active signal
ACTP and a write signal WTP, and generate a bank address
SBANK<0:2> and a repair address SADDR<0:N> The PPR mode
signal PPR_EN may be enabled by a mode register (MRS) in the PPR
mode. The active signal ACTP may be a pulse signal which is enabled
for a predetermined period when an active command is inputted. The
write signal WTP may be a pulse signal which is enabled for a
predetermined period when a write command is inputted. The bank
information BANK<0:2> may represent a bank where a fail cell
detected in a post package test is positioned, among a plurality of
banks (for example, eight banks). The row address information
ROW<1:14> may represent the row address of a fail cell. The
column address information COL<3:9> may represent the column
address of a fail cell. The mat information RMAT<0:3> may be
the address signal of a mat where a fail cell is positioned, among
a plurality of cell mats. The mat region information DOCT may be a
signal for identifying a column fuse region allocated to each cell
mat.
[0040] Further, the fuse array control circuit 100 may generate an
internal boot-up signal ATBOOTUP_EN (not shown in FIG. 1 but shown
in FIG. 2) and an internal rupture signal ATRUP_EN (not shown in
FIG. 1 but shown in FIG. 2) in response to the active signal ACTP
and the write signal WTP. The fuse array control circuit 100 may
search an unused fuse set based on the fuse information RF_EN,
RF_DIS, CF_EN and CF_DIS and store an unused fuse information
FUSE_<0:K>, in response to the internal boot-up signal
ATBOOTUP_EN. The fuse array control circuit 100 may generate a
rupture control signal RUP_CTRL<0:S> for controlling the
repair address SADDR<0:N> to be programmed in an unused fuse
set corresponding to the unused fuse information FUSE_<0:K>,
in response to the internal rupture signal ATRUP_EN.
[0041] The fuse array control circuit 100 may generate a row select
signal ROW_SEL (not shown in FIG. 1 but shown in FIG. 7) and first
to third column select signals COL_SEL, COL_UPSEL and COL_DNSEL
(not shown in FIG. 1 but shown in FIG. 7) by combining the
row/column select signal ROWCOL_SEL, an up mat signal TECFUPREG and
a down mat signal TECFDNREG. The fuse array control circuit 100 may
output the unused fuse information FUSE_<0:K> by selecting
one of the unused row fuse information of the row fuse region 210
and the unused column fuse information of the column fuse region
220, in response to the row select signal ROW_SEL and the first to
third column select signals COL_SEL, COL_UPSEL and COL_DNSEL. The
row/column select signal ROWCOL_SEL may select one of a row repair
and a column repair in the PPR mode. The up mat signal TECFUPREG
may represent an up mat sharing a bit line sense amplifier (BLSA)
with a mat where a fail cell is positioned. The down mat signal
TECFDNREG may represent a down mat sharing the bit line sense
amplifier (BLSA) with the mat where the fail cell is
positioned.
[0042] In the case where a row repair is performed, repair is
performed only in a corresponding row of a mat where a fail cell is
positioned. In the case where a column repair is performed, repair
is performed not only in a mat where a fail cell is positioned but
also an up mat and a down mat which share a bit line sense
amplifier (BLSA) with the mat where the fail cell is positioned. To
this end, the fuse array control circuit 100 may receive the up mat
signal TECFUPREG and the down mat signal TECFDNREG together with
the row/column select signal ROWCOL_SEL, and control, in the case
of a column repair, repair to be performed also in corresponding
columns of the up mat and the down mat which share the bit line
sense amplifier (BLSA) with the mat where the fail cell is
positioned.
[0043] Further, the fuse array control circuit 100 may provide, to
the fuse array circuit 200, a clock signal CLK which toggles when
the internal boot-up signal ATBOOTUP_EN or the internal rupture
signal ATRUP_EN is enabled and a boot-up clock signal ATBOOTUP_CLK
which toggles when the internal boot-up signal ATBOOTUP_EN is
enabled. The fuse array circuit 200 may output the fuse information
RF_EN, RF_DIS, CF_EN and CF_DIS of a row fuse set and a column fuse
set and output programmed row address and column address as the row
fail data FS_RDATA<0:P> and the column fail data
FS_CDATA<0:Q>, in synchronization with the clock signal CLK
and the boot-up clock signal ATBOOTUP_CLK.
[0044] As described above, in accordance with an embodiment of the
present invention, a semiconductor memory device is provided that
can perform a post package repair that includes performing a row
repair for a row fail and a column repair for a column fail.
Accordingly, the yield of the semiconductor memory device may be
significantly improved.
[0045] Hereinafter, the respective components of the fuse array
control circuit 100 will be described in more detail with reference
to FIG. 2.
[0046] FIG. 2 is a block diagram illustrating an example
configuration for the fuse array control circuit 100 shown in FIG.
1.
[0047] Referring to FIG. 2, the fuse array control circuit 100 may
include an address latch block 110, a control signal generation
block 120, a boot-up control block 130, a rupture control block
140, and a repair data selection block 150.
[0048] The address latch block 110 may store a fail address, based
on the row address information ROW<1:14>, the column address
information COL<3:9>, the bank information BANK<0:2>,
the mat information RMAT<0:3> and the mat region information
DOCT of a fail cell, in response to the active signal ACTP and the
write signal WTP, when the PPR mode signal PPR_EN is enabled. At
this time, the fail address may include a row address
RA<1:14>, a column address CA<3:9>, a bank address
BK<0:2>, a mat address MAT<0:3> and a mat region signal
OCT. In the case where row repair is to be performed in the PPR
mode, the active signal ACTP is inputted to the address latch block
110 together with the bank information BANK<0:2> and the row
address information ROW<1:14>, According to this fact, the
address latch block 110 may store the row address information
ROW<1:14> and the bank information BANK<0:2> as the row
address RA<1:14> and the bank address BK<0:2>,
respectively. Conversely, in the case where column repair is to be
performed in the PPR mode, after the active signal ACTP is inputted
to the address latch block 110 together with the bank information
BANK<0:2> and the row address information ROW<1:14>,
the write signal WTP is inputted to the address latch block 110
together with the column address information COL<3:9>, the
mat information RMAT<0:3> and the mat region information
DOCT. According to this fact, the address latch block 110 may store
the row address information ROW<1:14> and the bank
information BANK<0:2> as the row address RA<1:14> and
the bank address BK<0:2>, respectively, and store the column
address information COL<3:9>, the mat information
RMAT<0:3> and the mat region information DOCT as the column
address CA<3:9>, the mat address MAT<0:3> and the mat
region signal OCT, respectively.
[0049] The control signal generation block 120 may sequentially
generate the internal boot-up signal ATBOOTUP_EN and the internal
rupture signal ATRUP_EN in response to the row/column select signal
ROWCOL_SEL, the active signal ACTP and the write signal WTP, when
the PPR mode signal PPR_EN is enabled. Moreover, the control signal
generation block 120 may receive the clock signal CLK, and
additionally generate the boot-up clock signal ATBOOTUP_CLK which
toggles during the enable period of the internal boot-up signal
ATBOOTUP_EN and a rupture clock signal ATRUP_CLK which toggles
during the enable period of the internal rupture signal
ATRUP_EN.
[0050] The fuse array control circuit 100 may further include a
clock generation block 160 which generates the clock signal CLK in
response to the internal boot-up signal ATBOOTUP_EN and the
internal rupture signal ATRUP_EN. The clock generation unit 160 may
generate the clock signal CLK which toggles when the internal
boot-up signal ATBOOTUP_EN or the internal rupture signal ATRUP_EN
is enabled.
[0051] The boot-up control block 130 may search the row fuse region
210 and the column fuse region 220 corresponding to a fail address
in response to the internal boot-up signal ATBOOTUP_EN and the
boot-up clock signal ATBOOTUP_CLK, and then, store the unused row
fuse information of the row fuse region 210 and the unused column
fuse information of the column fuse region 220 searched, based on
the fuse information RF_EN, RF_DIS, CF_EN and CF_DIS. The boot-up
control block 130 may output an unused fuse information
FS<0:K> by selecting one of the unused row fuse information
or the unused column fuse information corresponding to the
row/column select signal ROWCOL_SEL. For reference, the fail
address may include partial bits RA<13:14> of the row address
RA<1:14>, the bank address BK<0:2>, the mat address
MAT<0:3> and the mat region signal OCT. The partial bits
RA<13:14> of the row address RA<1:14> may include not
row address information but mat group information which is obtained
by grouping the plurality of cell mats into a predetermined number.
Hereinafter, the partial bits RA<13:14> of the row address
RA<1:14> will be referred to as a mat group signal
RA<13:14>.
[0052] The boot-up control block 130 may receive the up mat signal
TECFUPREG and the down mat signal TECFDNREG together with the
row/column select signal ROWCOL_SEL, and generate the row select
signal ROW_SEL (not shown in FIG. 2 but shown in FIG. 7) and the
first to third column select signals COL_SEL, COL_UPSEL and
COL_DNSEL (not shown in FIG. 2 but shown in FIG. 7). For example,
if the row/column select signal ROWCOL_SEL indicating row pair is
inputted, the boot-up control block 130 may output the unused row
fuse information as the unused fuse information FS<0:K> in
response to the row select signal ROW_SEL. Conversely, if the
row/column select signal ROWCOL_SEL indicating column pair is
inputted, the boot-up control block 130 may output the unused
column fuse information as the unused fuse information
FS<0:K> in response to the first to third column select
signals COL_SEL, COL_UPSEL and COL_DNSEL. In addition, the boot-up
control block 130 may receive the mat address MAT<0:3> of the
fail address and generate an up mat address UPMAT<0:3> and a
down mat address DNMAT<0:3> (shown in FIG. 5), and
sequentially output a selected mat address SMAT<0:3>
according to the first to third column select signals COL_SEL,
COL_UPSEL and COL_DNSEL Thus, in the case of column repair, the
boot-up control block 130 may control repair to be performed also
in corresponding columns of an up mat and a down mat which share a
bit line sense amplifier (BLSA) with a mat where to the fail cell
is positioned.
[0053] The repair data selection block 150 may receive the selected
mat address SMAT<0:3> and the fail address, and generate the
repair address SADDR<0:N> corresponding to the row/column
select signal ROWCOL_SEL. At this time, the fail address may
include the row address RA<1:14>, the column address
CA<3:9>, the bank address BK<0:2> and the mat region
signal OCT. The repair data selection block 150 may output the bank
address BK<0:2> as a selected bank address SBANK<0:2>,
and output the unused fuse information FS<0:K> as an unused
fuse information FUSE_<0:K>.
[0054] The boot-up control block 130 may generate an overflow
signal OVERFLOW when the unused fuse information FS<0:K> does
not exist. The rupture control block 140 may generate the rupture
control signal RUP_CTRL<0:S> for controlling the repair
address SADDR<0:N> to be programmed in an unused fuse set
corresponding to the unused fuse information FUSE_<0:K>, in
response to the internal rupture signal ATRUP_EN and the rupture
clock signal ATRUP_CLK. The rupture control block 140 may disable
and output the rupture control signal RUP_CTRL<0:S> in
response to the overflow signal OVERFLOW.
[0055] FIG. 3 is a detailed block diagram illustrating an example
configuration for the control signal generation block 120 shown in
FIG. 2.
[0056] Referring to FIG. 3, the control signal generation block 120
may include a mode clock signal generation unit 122, a boot-up
control signal generation unit 124, and a rupture control signal
generation unit 126.
[0057] The mode clock signal generation unit 122 may receive the
clock signal CLK, and generate the boot-up clock signal
ATBOOTUP_CLK which toggles during the enable period of the internal
boot-up signal ATBOOTUP_EN and the rupture clock signal ATRUP_CLK
which toggles during the enable period of the internal rupture
signal ATRUP_EN.
[0058] The boot-up control signal generation unit 124 may generate
the internal boot-up signal ATBOOTUP_EN which is enabled in
response to the active signal ACTP or the write signal WTP or a
rupture stop signal ATRUP_STOP and is disabled in response to a
boot-up stop signal ATBOOTUP_STOP, when the PPR mode signal PPR_EN
is enabled. Furthermore, the boot-up control signal generation unit
124 may generate the boot-up stop signal ATBOOTUP_STOP after the
boot-up clock signal ATBOOTUP_CLK toggles for a predetermined
period.
[0059] The rupture control signal generation unit 126 may generate
the internal rupture signal ATRUP_EN which is enabled in response
to the boot-up stop signal ATBOOTUP_STOP and is disabled in
response to the rupture stop signal ATRUP_STOP. The rupture control
signal generation unit 126 generates the rupture stop signal
ATRUP_STOP after the rupture clock signal ATRUP_CLK toggles for a
predetermined period.
[0060] FIGS. 4A and 4B are waveform diagrams illustrating an
operation of the control signal generation block 120 shown in FIG.
3. FIG. 4A shows the operation of the control signal generation
block 120 in the case of a row repair, and FIG. 4B shows the
operation of the control signal generation block 120 in the case of
a column repair.
[0061] Referring to FIGS. 4A and 4B, the PPR mode is entered as the
PPR mode signal PPR_EN is enabled. In FIG. 4A, the row/column
select signal ROWCOL_SEL which has a low level indicating row
repair, the internal boot-up signal ATBOOTUP_EN is enabled in
response to the active signal ACTP. Conversely, in FIG. 4B,
according to the row/column select signal ROWCOL_SEL which has a
high level indicating column repair, the internal boot-up signal
ATBOOTUP_EN is enabled in response to the write signal WTP.
[0062] When the internal boot-up signal ATBOOTUP_EN is enabled,
after the boot-up clock signal ATBOOTUP_CLK toggles for the
predetermined period, the boot-up stop signal ATBOOTUP_STOP is
generated. Accordingly, the internal boot-up signal ATBOOTUP_EN is
disabled, and the internal rupture signal ATRUP_EN is enabled.
[0063] When the internal rupture signal ATRUP_EN is enabled, after
the rupture clock signal ATRUP_CLK toggles for the predetermined
period, the rupture stop signal ATRUP_STOP is generated.
Accordingly, the internal rupture signal ATRUP_EN is disabled, and
the internal boot-up signal ATBOOTUP_EN is enabled again.
[0064] When the internal boot-up signal ATBOOTUP_EN is enabled,
after the boot-up clock signal ATBOOTUP_CLK toggles for the
predetermined period, the boot-up stop signal ATBOOTUP_STOP is
generated. Accordingly, the internal boot-up signal ATBOOTUP_EN is
disabled. Thereafter, the PPR mode is exited as the PPR mode signal
PPR_EN is disabled.
[0065] For reference, while not shown in a drawing, before the
internal boot-up signal ATBOOTUP_EN or the internal rupture signal
ATRUP_EN is enabled, a boot-up power enable signal provided to
perform the boot-up operation or a rupture power enable signal
provided to perform the rupture operation may be enabled in
advance. Therefore, a power supply voltage necessary for the
boot-up operation or the rupture operation may be supplied in
advance.
[0066] FIG. 5 is a detailed block diagram illustrating an example
configuration for the boot-up control block 130 shown in FIG.
2.
[0067] Referring to FIG. 5, the boot-up control block 130 may
include a counter 410, a fail region search unit 420, and a fuse
set latch unit 430.
[0068] The counter 410 may count the boot-up clock signal
ATBOOTUP_CLK and generate a counting signal CNT_BIT<0:M> when
the internal boot-up signal ATBOOTUP_EN is enabled. While FIG. 5
illustrates the case where the counter 410 performs a counting
operation by receiving the boot-up clock signal ATBOOTUP_CLK, it is
to be noted that, in another embodiment, the counter 410 may
perform a counting operation by receiving the clock signal CLK.
[0069] The fail region search unit 420 may search the row fuse
region 210 and the column fuse region 220 corresponding to the fail
address, in response to the counting signal CNT_BIT<0:M>, and
output a row region signal ROW_REGION and a plurality of column
region signals COL_REGION, COL_UPREGION and COL_DNREGION. The fail
region search unit 420 may receive the mat address MAT<0:3>
of the fail address, and generate the up mat address
UPMAT<0:3> and the down mat address DNMAT<0:3>. In the
illustrated embodiment, in order to perform repair also in the
corresponding columns of an up mat and a down mat which share a bit
line sense amplifier (BLSA) with the mat where the fail cell is
positioned, the plurality of column region signals COL_REGION,
COL_UPREGION and COL_DNREGION may include a first column region
signal COL_REGION corresponding to the mat address MAT<0:3>
of the fail address, a second column region signal COL_UPREGION
corresponding to the up mat address UPMAT<0:3>, and a third
column region signal COL_DNREGION corresponding to the down mat
address DNMAT<0:3>.
[0070] The fuse set latch unit 430 may store the counting signal
CNT_BIT<0:M> as unused fuse information, based on the row
region signal ROW_REGION, the plurality of column region signals
COL_REGION, COL_UPREGION and COL_DNREGION and the fuse information
RF_EN, RF_DIS, CF_EN and CF_DIS, and output the stored unused fuse
information as the unused fuse information FS<0:K> in
response to the row select signal ROW_SEL and the first to third
column select signals COL_SEL, COL_UPSEL and COL_DNSEL which are
generated by combining the row/column select signal ROWCOL_SEL, the
up mat signal TECFUPREG and the down mat signal TECFDNREG (see FIG.
7). The fuse set latch unit 430 may output the selected mat address
SMAT<0:3> by selecting one of the mat address MAT<0:3>,
the up mat address UPMAT<0:3> and the down mat address
DNMAT<0:3> according to the first to third column select
signals COL_SEL, COL_UPSEL and COL_DNSEL. The fuse set latch unit
430 may generate the overflow signal OVERFLOW when it is determined
from the fuse information RF_EN, RF_DIS, CF_EN and CF_DIS that the
unused fuse information FS<0:K> does not exist.
[0071] FIG. 6 is a detailed block diagram illustrating an example
configuration for the fail region search unit 420 shown in FIG.
5.
[0072] Referring to FIG. 6, the fail region search unit 420 may
include a row region search section 510 and a column region search
section 530.
[0073] The row region search section 510 may search the row fuse
region 210 corresponding to the bank address BK<0:2> and the
mat group signal RA<13:14> of the fail address and output the
row region signal ROW_REGION, in response to the counting signal
CNT_BIT<0:M>.
[0074] The column region search section 530 may search the column
fuse region 220 corresponding to the bank address BK<0:2>,
the mat address MAT<0:3>, the mat region signal OCT and the
mat group signal RA<13:14> of the fail address and output the
first to third column region signals COL_REGION, COL_UPREGION and
COL_DNREGION, in response to the counting signal
CNT_BIT<0.0:M>.
[0075] The column region search section 530 may include an up mat
signal generation part 522, a down mat signal generation part 524,
a first column region search part 532, a second column region
search part 534, and a third column region search part 536.
[0076] The up mat signal generation part 522 may up-count the mat
address MAT<0:3> and generate the up mat address
UPMAT<0:3>. The down mat signal generation part 524 may
down-count the mat address MAT<0:3> and generate the down mat
address DNMAT<0:3>. The up mat signal generation part 522 may
be implemented by an adder, and the down mat signal generation part
524 may be implemented by a subtractor.
[0077] The first column region search part 532 may search the
column fuse region 220 corresponding to the bank address
BK<0:2>, the mat address MAT<0:3>, the mat region
signal OCT and the mat group signal RA<13:14> and output the
first column region signal COL_REGION, in response to the counting
signal CNT_BIT<0:M>, The second column region search part 534
may search the column fuse region 220 corresponding to the bank
address BK<0:2>, the up mat address UPMAT<0:3>, the mat
region signal OCT and the mat group signal RA<13:14> and
output the second column region signal COL_UPREGION, in response to
the counting signal CNT_BIT<0:M>. The third column region
search part 536 may search the column fuse region 220 corresponding
to the bank address BK<0:2>, the down mat address
DNMAT<0:3>, the mat region signal OCT and the mat group
signal RA<13:14> and output the third column region signal
COL_DNREGION, in response to the counting signal
CNT_BIT<0:M>.
[0078] FIG. 7 is a detailed block diagram illustrating an example
configuration for the fuse set latch unit 430 shown in FIG. 5.
[0079] Referring to FIG. 7, the fuse set latch unit 430 may include
an input control section 610, an output control section 620, a row
latch section 632, and first to third column latch sections 634,
636 and 638.
[0080] The input control section 610 may generate a row input
control signal ROWLATP based on the row region signal ROW_REGION
and the fuse information RF_EN, RF_DIS, CF_EN and CF_DIS. Also, the
input control section 610 may generate first to third column input
control signals COLLATP, COLUPLATP and COLDNLATP based on the first
to third column region signals COL_REGION, COL_UPREGION and
COL_DNREGION and the fuse information RF_EN, RF_DIS, CF_EN and
CF_DIS.
[0081] The input control section 610 may include a row pulse
generation part 612, a column pulse generation part 614, a row
input control signal generation part 622, and first to third column
input control signal generation parts 624, 626 and 628.
[0082] The row pulse generation part 612 may generate a row pulse
signal ROWFSMRDLATP by synchronizing the first information RF_EN
and the second information RF_DIS among the fuse information RF_EN,
RF_DIS, CF_EN and CF_DIS with the boot-up clock signal
ATBOOTUP_CLK. The column pulse generation part 614 may generate a
column pulse signal COLFSMRDLATP by synchronizing the third
information CF_EN and the fourth information CF_DIS among the fuse
informations RF_EN, RF_DIS, CF_EN and CF_DIS with the boot-up clock
signal ATBOOTUP_CLK. The row pulse generation part 612 and the
column pulse generation part 614 may control a corresponding row or
column pulse signal to be enabled, only in the case where an
already used row/column fuse set and an unusable row/column fuse
set are excluded.
[0083] The row input control signal generation part 622 may receive
the row pulse signal ROWFSMRDLATP and the row region signal
ROW_REGION, and generate the row input control signal ROWLATP. The
respective first to third column input control signal generation
parts 624, 626 and 628 may receive the column pulse signal
COLFSMRDLATP and the first to third column region signals
COL_REGION, COL_UPREGION and COL_DNREGION respectively
corresponding thereto, and generate the first to third column input
control signals COLLATP, COLUPLATP and COLDNLATP. Each of the row
input control signal generation part 622 and the first to third
column input control signal generation parts 624, 626 and 628 may
be implemented by an AND gate which enables an output signal when
all input signals are enabled.
[0084] The output control section 620 may generate the row select
signal ROW_SEL and the first to third column select signals
COL_SEL, COL_UPSEL and COL_DNSEL by combining the row/column select
signal ROWCOL_SEL, the up mat signal TECFUPREG and the down mat
signal TECFDNREG. For example, the output control section 620 may
enable and output the row select signal ROW_SEL, when the
row/column select signal ROWCOL_SEL with the low level indicating
row repair is inputted and both the up mat signal TECFUPREG and the
down mat signal TECFDNREG are inputted at low levels, Conversely,
the output control section 620 may enable and output the first
column select signal COL_SEL, when the row/column select signal
ROWCOL_SEL with the high level indicating column repair is inputted
and both the up mat signal TECFUPREG and the down mat signal
TECFDNREG are inputted at the low levels. Otherwise, the output
control section 620 may enable and output the second column select
signal COL_UPSEL, when the row/column select signal ROWCOL_SEL with
the high level indicating column repair is inputted, the up mat
signal TECFUPREG is inputted at a high level and the down mat
signal TECFDNREG is inputted at the low level.
[0085] The row latch section 632 may store a first bit group
CNT_BIT<A:B> of the counting signal CNT_BIT<0:M> as
unused row fuse information in response to the row input control
signal ROWLATP, and output the stored unused row fuse information
as unused row fuse information ROWFS<0:K> in response to the
row select signal ROW_SEL. The first column latch section 634 may
store a second bit group CNT_BIT<C:D> of the counting signal
CNT_BIT<0:M> as unused column fuse information in response to
the first column input control signal COLLATP, and output the
stored unused column fuse information as an unused column fuse
information COLFS<0:J> in response to the first column select
signal COL_SEL. The second column latch section 636 may store the
second bit group CNT_BIT<C:D> of the counting signal
CNT_BIT<0:M> as unused column fuse information in response to
the second column input control signal COLUPLATP, and output the
stored unused column fuse information as unused column fuse
information COLUPFS<0:1> in response to the second column
select signal COL_UPSEL. The third column latch section 638 may
store the second bit group CNT_BIT<C:D> of the counting
signal CNT_BIT<0:M> as unused column fuse information in
response to the third column input control signal COLDNLATP, and
output the stored unused column fuse information as unused column
fuse information COLDNFS<0:3> in response to the third column
select signal COL_DNSEL. While not shown in the drawing, the row
latch section 632 and the first to third column latch sections 634,
636 and 638 may be re in response to a re signal RSTB which is
inputted from an exterior.
[0086] The fuse set latch unit 430 may further include a latch
output section 650 which latches the unused row fuse information
ROWFS<0:K>, the unused column fuse information
COLFS<0:J>, the unused column fuse information
COLUPFS<0:J> or the unused column fuse information
COLDNFS<0:J> outputted from the row latch section 632 and the
first to third column latch sections 634, 636 and 638 and outputs
finally the unused fuse information FS<0:K>.
[0087] Also, the fuse set latch unit 430 may further include an
overflow signal generation section 660 and a mat signal generation
section 670.
[0088] The overflow signal generation section 660 may generate the
overflow signal OVERFLOW by selecting the row input control signal
ROWLATP when the row select signal ROW_SEL is enabled and selecting
the first column input control signal COLLATP when the first column
select signal COL_SEL is enabled. The overflow signal OVERFLOW may
be enabled when unused row fuse information does not exist in the
case of row repair and unused column fuse information does not
exist in the case of column repair, that is, when the unused fuse
information FS<0:K> does not exist. The mat signal generation
section 670 may generate the selected mat address SMAT<0:3>
by selecting one of the mat address MAT<0:3>, the up mat
address UPMAT<0:3> and the down mat address DNMAT<0:3>
based on the second column select signal COL_UPSEL and the third
column select signal COL_DNSEL
[0089] Hereinafter, the operation of the semiconductor memory
device in accordance with an embodiment will be described with
reference to FIGS. 1 to 7.
[0090] FIGS. 8A and 8B are a timing diagram and a flow chart
illustrating a row repair operation of a semiconductor memory
device in accordance with an embodiment of the present invention,
respectively.
[0091] Referring to FIGS. 8A and 8B, the PPR mode is entered when
the PPR mode signal PPR_EN is enabled. According to the row/column
select signal ROWCOL_SEL with the low level indicating row repair,
row repair is performed (S800).
[0092] 1) Step of Storing a Fail Address (S810)
[0093] At step S810, the row repair PPR includes storing a fail
address in response to active signal ACTP. In more detail, the
address latch block 110 of FIG. 2 may store the row address
information ROW<1:14> and the bank information
BANK<0:2> as the row address RA<1:14> and the bank
address BK<0:2>, respectively, in response to the active
signal ACTP.
[0094] 2) Step of Performing a First Boot-Up Operation (S820)
[0095] At step S820 the row repair PPR further includes performing
a first boot-up operation. More specifically, the control signal
generation block 120 may enable the internal boot-up signal
ATBOOTUP_EN in response to the active signal ACTP, and accordingly,
the clock generation block 160 may generate the clock signal CLK.
Thereafter, the control signal generation block 120 may receive the
clock signal CLK, and generate the boot-up clock signal
ATBOOTUP_CLK which toggles during the enable period of the internal
boot-up signal ATBOOTUP_EN.
[0096] The counter 410 of the boot-up control block 130 in FIG. 5
may count the boot-up clock signal ATBOOTUP_CLK and generate the
counting signal CNT_BIT<0:M> when the internal boot-up signal
ATBOOTUP_EN is enabled. The fail region search unit 420 may search
the row fuse region 210 corresponding to the bank address
BK<0:2> and the mat group signal RA<13:14> of the fail
address and output the row region signal ROW_REGION, in response to
the counting signal CNT_BIT<0:M>.
[0097] At this time, the fuse array circuit 200 of FIG. 1 may
output the fuse information RF_EN, RF_DIS, CF_EN and CF_DIS of a
row fuse set and a column fuse set and output programmed row
address and column address as the row fail data FS_RDATA<0:P>
and the column fail data FS_CDATA<0:Q>, in a boot-up
operation.
[0098] The input control section 610 of the fuse set latch unit 430
in FIG. 7 may enable the row input control signal ROWLATP in
response to the row region signal ROW_REGION and the first
information RF_EN and the second information RF_DIS of the fuse
information RF_EN, RF_DIS, CF_EN and CF_DIS. Then, the row latch
section 632 may complete the boot-up operation by storing the first
bit group CNT_BIT<A:B> of the counting signal
CNT_BIT<0:M> as unused row fuse information in response to
the row input control signal ROWLATP.
[0099] 3) Step of Performing a Rupture Operation (S830)
[0100] At step S830, the row repair PPR includes performing a
rupture operation. As both the up mat signal TECFUPREG and the down
mat signal TECFDNREG are inputted at the low levels, the output
control section 620 of FIG. 7 may enable the row select signal
ROW_SEL, and in response to this, the row latch section 632 may
output the stored unused row fuse information as the unused row
fuse information ROWFS<0:K>. The latch output section 650 may
latch the unused row fuse information ROWFS<0:K> and finally
output the unused fuse information FS<0:K>. Meanwhile, the
overflow signal generation section 660 may generate the overflow
signal OVERFLOW by selecting the row input control signal ROWLATP,
when the row select signal ROW_SEL is enabled. In the case where
the unused fuse information FS<0:K> exists as both the row
select signal ROW_SEL and the row input control signal ROWLATP are
enabled, the overflow signal generation section 660 may disable and
output the overflow signal OVERFLOW.
[0101] The repair data selection block 150 of FIG. 2 may generate
the repair address SADDR<0:N> corresponding to a row address
of the fail address, output the bank address BK<0:2> as the
selected bank address SBANK<0:2>, and output the unused fuse
information FS<0:K> as the unused fuse information
FUSE_<0:K>.
[0102] The control signal generation block 120 of FIG. 2 may enable
the internal rupture signal ATRUP_EN, and generate the rupture
clock signal ATRUP_CLK which toggles during the enable period of
the to internal rupture signal ATRUP_EN.
[0103] The rupture control block 140 of FIG. 2 may generate the
rupture control signal RUP_CTRL<0:S> in response to the
internal rupture signal ATRUP_EN and the rupture clock signal
ATRUP_CLK. At this time, if the overflow signal OVERFLOW which
notifies that the unused fuse information FS<0:K> does not
exist is enabled, the rupture control block 140 may disable and
output the rupture control signal RUP_CTRL<0:S> such that a
rupture operation is not performed.
[0104] The fuse array circuit 200 of FIG. 1 may perform a rupture
operation in response to the rupture control signal
RUP_CTRL<0:S> such that the repair address SADDR<0:N>
is programmed in an unused fuse set corresponding to the unused
fuse information FUSE_<0:K>.
[0105] 4) Step of Performing a Second Boot-Up Operation (S840)
[0106] At step S840, the row repair PPR further includes performing
a second boot-up operation S840. More specifically, the control
signal generation block 120 of FIG. 2 may enable again the internal
boot-up signal ATBOOTUP_EN, and generate the boot-up clock signal
ATBOOTUP_CLK which toggles during the enable period of the internal
boot-up signal ATBOOTUP_EN.
[0107] The fuse array circuit 200 of FIG. 1 may output again
programmed row address and column address as the row fail data
FS_RDATA<0:P> and the column fail data FS_CDATA<0: Q>,
respectively, in a boot-up operation. According to this fact, the
row/column redundancy circuit 300 may update the row fail data
FS_RDATA<0:P> and the column fail data FS_CDATA<0:Q>
outputted from the fuse array circuit 200, and perform row repair
or column repair based on updated data.
[0108] Meanwhile, the fuse array circuit 200 of FIG. 1 may output
again the fuse information RF_EN, RF_DIS, CF_EN and CF_DIS of a row
fuse set and a column fuse set in the boot-up operation, and the
respective components of the fuse array control circuit 100 may
perform again the first boot-up operation and update unused row
fuse information in the row latch section 632 of FIG. 7. In another
embodiment of the present disclosure, by applying a mode register
(MRS) command, updated unused fuse information may be read out
through a data input/output (DQ) pad, and a post package repair
(PPR) fuse resource may be checked.
[0109] After the above-described operations are performed, the PPR
mode may be exited as the PPR mode signal PPR_EN is disabled
(S850).
[0110] FIGS. 9A and 9B are a timing diagram and a flow chart
illustrating a column repair operation of a semiconductor memory
device in accordance with an embodiment of the present invention,
respectively.
[0111] Referring to FIGS. 9A and 9B, the PPR mode is entered as the
PPR mode signal PPR_EN is enabled. According to the row/column
select signal ROWCOL_SEL with the high level indicating column
repair, column repair is performed (S900).
[0112] 1) Step of Storing a Fail Address (S910)
[0113] At step S910, the column repair PPR stores a fail address in
response to active signal ACTP. More specifically, the address
latch block 110 of FIG. 2 may store the row address information
ROW<1:14> and the bank information BANK<0:2> as the row
address RA<1:14> and the bank address BK<0:2>,
respectively, in response to the active signal ACTP. Also, the
address latch block 110 may store the column address information
COL<3:9>, the mat information RMAT<0:3> and the mat
region information DOCT as the column address CA<3:9>, the
mat address MAT<0:3> and the mat region signal OCT,
respectively, in response to the write signal WTP.
[0114] 2) Step of Performing a First Boot-Up Operation (S920)
[0115] At step 920, the column repair PPR includes performing a
first boot-up operation, More specifically, the control signal
generation block 120 of FIG. 2 may enable the internal boot-up
signal ATBOOTUP_EN in response to the write signal WTP, and
accordingly, the clock generation block 160 may generate the clock
signal CLK. Thereafter, the control signal generation block 120 may
receive the clock signal CLK, and generate the boot-up clock signal
ATBOOTUP_CLK which toggles during the enable period of the internal
boot-up signal ATBOOTUP_EN.
[0116] The counter 410 of the boot-up control block 130 in FIG. 5
to may count the boot-up clock signal ATBOOTUP_CLK and generate the
counting signal CNT_BIT<0:M> when the internal boot-up signal
ATBOOTUP_EN is enabled. The fail region search unit 420 may receive
the mat address MAT<0:3> and generate the up mat address
UPMAT<0:3> and the down mat address DNMAT<0:3>. The
fail region search unit 420 may search the column fuse region 220
corresponding to the fail address and the respective mat addresses,
in response to the counting signal CNT_BIT<0:M>, and output
the first to third column region signals COL_REGION, COL_UPREGION
and COL_DNREGION. That is to say, the fail region search unit 420
may output all the first to third column region signals COL_REGION,
COL_UPREGION and COL_DNREGION to perform repair also in
corresponding columns of an up mat and a down mat which share a bit
line sense amplifier (BLSA) with a mat where a fail cell is
positioned.
[0117] At this time, the fuse array circuit 200 of FIG. 1 may
output the fuse information RF_EN, RF_DIS, CF_EN and CF_DIS of a
row fuse set and a column fuse set and output programmed row
address and column address as the row fail data FS_RDATA<0:P>
and the column fail data FS_CDATA<0:Q>, in a boot-up
operation.
[0118] The input control section 610 of the fuse set latch unit 430
in FIG. 7 may enable the first to third column input control
signals COLLATP, COLUPLATP and COLDNLATP in response to the first
to third column region signals COL_REGION, COL_UPREGION and
COL_DNREGION and the third information CF_EN and the fourth
information CF_DIS of the fuse information RF_EN, RF_DIS, CF_EN and
CF_DIS. Then, the first to third column latch sections 634, 636 and
638 may complete the boot-up operation by storing the second bit
group CNT_BIT<C:D> of the counting signal CNT_BIT<0:M>
as unused column fuse information in response to the first to third
column input control signals COLLATP, COLUPLATP and COLDNLATP.
[0119] 3) Step of Performing a Rupture Operation (S930)
[0120] At step S930, a rupture operation is performed. First, as
both the up mat signal TECFUPREG and the down mat signal TECFDNREG
are inputted at the low levels, the output control section 620 of
FIG. 7 may enable the first column select signal COL_SEL, and in
response to this, the first column latch section 634 may output the
stored unused column fuse information as the unused column fuse
information COLFS<0:3>. The latch output section 650 may
latch the unused column fuse information COLFS<0:J> and
finally output the unused fuse information FS<0:K>. The
repair data selection block 150 of FIG. 2 may generate the repair
address SADDR<0:N> corresponding to a column address of the
fail address, output the bank address BK<0:2> as the selected
bank address SBANK<0:2>, and output the unused fuse
information FS<0:K> as the unused fuse information
FUSE_<0:K>.
[0121] The control signal generation block 120 of FIG. 2 may enable
the internal rupture signal ATRUP_EN, and generate the rupture
clock signal ATRUP_CLK which toggles during the enable period of
the internal rupture signal ATRUP_EN. The rupture control block 140
may generate the rupture control signal RUP_CTRL<0:S> in
response to the internal rupture signal ATRUP_EN and the rupture
clock signal ATRUP_CLK. The fuse array circuit 200 of FIG. 1 may
perform a rupture operation in response to the rupture control
signal RUP_CTRL<0:S> such that the repair address
SADDR<0:N> is programmed in an unused fuse set corresponding
to the unused fuse information FUSE_<0:K>.
[0122] Next, as the up mat signal TECFUPREG is inputted at the high
level and the down mat signal TECFDNREG is inputted at the low
level, the output control section 620 of FIG. 7 may enable the
second column select signal COL_UPSEL, and in response to this, the
second column latch section 636 may output the stored unused column
fuse information as the unused column fuse information
COLUPFS<0:J>. Similarly, by repeating the above-described
operations, the fuse array circuit 200 of FIG. 1 may perform a
rupture operation in response to the rupture control signal
RUP_CTRL<0:S> such that the repair address SADDR<0:N>
is programmed in an unused fuse set corresponding to the unused
fuse information FUSE_<0:K>.
[0123] Last, as the up mat signal TECFUPREG is inputted at the low
level and the down mat signal TECFDNREG is inputted at the high
level, the output control section 620 of FIG. 7 may enable the
third column select signal COL_DNSEL, and in response to this, the
third column latch section 638 may output the stored unused column
fuse information as the unused column fuse information
COLDNFS<0:J>. Similarly, by repeating the above-described
operations, the fuse array circuit 200 of FIG. 1 may perform a
rupture operation in response to the rupture control signal
RUP_CTRL<0:S> such that the repair address SADDR<0:N>
is programmed in an unused fuse set corresponding to the unused
fuse information FUSE_<0:K>.
[0124] Through the above procedure, in the case of column repair,
it is possible to control repair to be performed also in
corresponding columns of an up mat and a down mat which share a bit
line sense amplifier (BLSA) with a mat where the fail cell is
positioned.
[0125] 4) Step of Performing a Second Boot-Up Operation (S940)
[0126] Thereafter, a second boot-up operation is performed at step
S940 More specifically, the control signal generation block 120 of
FIG. 2 may enable again the internal boot-up signal ATBOOTUP_EN,
and generate the boot-up clock signal ATBOOTUP_CLK which toggles
during the enable period of the internal boot-up signal
ATBOOTUP_EN.
[0127] The fuse array circuit 200 of FIG. 1 may output again
programmed row address and column address as the row fail data
FS_RDATA<0:P> and the column fail data FS_CDATA<0:Q>,
respectively, in a boot-up operation. According to this fact, the
row/column redundancy circuit 300 of FIG. 1 may update the row fail
data FS_RDATA<0:P> and the column fail data
FS_CDATA<0:Q> outputted from the fuse array circuit 200, and
perform row repair or column repair based on updated data.
[0128] The fuse array circuit 200 may output again the fuse
information RF_EN, RF_DIS, CF_EN and CF_DIS of a row fuse set and a
column fuse set in the boot-up operation, and the respective
components of the fuse array control circuit 100 may perform again
the first boot-up operation and update unused row fuse information
in the row latch section 632. In another embodiment of the present
disclosure, by applying a mode register (MRS) command, an updated
unused fuse information may be read out through a data input/output
(DQ) pad, and a post package repair (PPR) fuse resource may be
checked.
[0129] After the above-described operations are performed, the PPR
mode may be exited as the PPR mode signal PPR_EN is disabled
(950).
[0130] As is apparent from the above descriptions, a semiconductor
memory device is provided, in accordance with an embodiment that is
capable of performing a row repair post package repair and a column
repair post package repair depending on whether a row fail or a
column fail is detected. As a result, the yield of a semiconductor
package employing the semiconductor memory device may be
significantly improved.
[0131] Although various embodiments have been described for
illustrative purposes, it will be apparent to those skilled in the
art that various changes and modifications may be made without
departing from the spirit and scope of the invention as defined in
the following claims.
[0132] For instance, positions and kinds of the logic gates and
transistors described as an example in the above embodiment should
be differently realized according to the polarities of the signals
inputted thereto.
* * * * *