U.S. patent application number 15/642605 was filed with the patent office on 2017-10-26 for capacitive sensor.
The applicant listed for this patent is ALPS ELECTRIC CO., LTD.. Invention is credited to Mitsuo BITO, Yuta HIRAKI, Setsuo ISHIBASHI, Yasuyuki KITAMURA, Tomoyuki YAMAI, Manabu YAZAWA.
Application Number | 20170307413 15/642605 |
Document ID | / |
Family ID | 56405536 |
Filed Date | 2017-10-26 |
United States Patent
Application |
20170307413 |
Kind Code |
A1 |
YAMAI; Tomoyuki ; et
al. |
October 26, 2017 |
CAPACITIVE SENSOR
Abstract
A capacitive sensor includes a base material provided with a
pattern of a light-transmissive conductive film. The
light-transmissive conductive film contains metal nanowires. The
pattern includes a detection pattern of a plurality of detection
electrodes arranged with intervals, a plurality of lead-out wirings
linearly extending in a first direction from corresponding ones of
the detection electrodes, and a resistance-setting section
connected to at least any one of the lead-out wirings and including
a portion extending in a direction not parallel to the first
direction.
Inventors: |
YAMAI; Tomoyuki; (Tokyo,
JP) ; KITAMURA; Yasuyuki; (Tokyo, JP) ;
HIRAKI; Yuta; (Tokyo, JP) ; ISHIBASHI; Setsuo;
(Tokyo, JP) ; BITO; Mitsuo; (Tokyo, JP) ;
YAZAWA; Manabu; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
ALPS ELECTRIC CO., LTD. |
Tokyo |
|
JP |
|
|
Family ID: |
56405536 |
Appl. No.: |
15/642605 |
Filed: |
July 6, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
PCT/JP2015/080502 |
Oct 29, 2015 |
|
|
|
15642605 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G06F 3/0443 20190501;
G01R 27/2605 20130101; H01B 5/14 20130101; G01D 5/24 20130101; H03K
17/962 20130101; G06F 3/041 20130101; G06F 3/044 20130101 |
International
Class: |
G01D 5/24 20060101
G01D005/24; H03K 17/96 20060101 H03K017/96; G01R 27/26 20060101
G01R027/26 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 16, 2015 |
JP |
2015-007253 |
Claims
1. A capacitive sensor comprising: a base material provided with a
pattern of a light-transmissive conductive film, wherein the
light-transmissive conductive film contains metal nanowires; and
wherein the pattern includes: a detection pattern of a plurality of
detection electrodes arranged with intervals; a plurality of
lead-out wirings linearly extending in a first direction from
corresponding ones of the detection electrodes; and a
resistance-setting section connected to at least any one of the
lead-out wirings and including a portion extending in a direction
not parallel to the first direction.
2. The capacitive sensor according to claim 1, wherein the
resistance-setting section has a fold-back pattern.
3. The capacitive sensor according to claim 2, wherein the
plurality of lead-out wirings have an equal-interval region where
the plurality of lead-out wirings are arrayed with a constant first
pitch in a second direction orthogonal to the first direction; the
fold-back pattern is juxtaposed with the equal-interval region in
the second direction; and the fold-back pattern includes a
plurality of linear pattern portions linearly extending in the
first direction.
4. The capacitive sensor according to claim 3, wherein the linear
pattern portions have the same widths as those of corresponding
ones of the lead-out wirings; and the pitch of the linear pattern
portions in the second direction is equal to the first pitch.
5. The capacitive sensor according to claim 1, wherein the first
direction is a direction toward an external terminal region from
the detection pattern; the plurality of detection electrodes are
arranged in the first direction; and the resistance-setting section
is at least connected to the lead-out wiring extending from the
detection electrode closest to the external terminal region.
6. The capacitive sensor according to claim 1, wherein the wiring
patterns including the plurality of lead-out wirings extending from
corresponding ones of the plurality of detection electrodes have
the same resistance values.
7. The capacitive sensor according to claim 5, wherein the wiring
patterns including the plurality of lead-out wirings extending from
corresponding ones of the plurality of detection electrodes have
the same resistance values.
8. The capacitive sensor according to claim 1, wherein the metal
nanowires include silver nanowires.
9. The capacitive sensor according to claim 5, wherein the metal
nanowires include silver nanowires.
10. The capacitive sensor according to claim 6, wherein the metal
nanowires include silver nanowires.
11. The capacitive sensor according to claim 7, wherein the metal
nanowires include silver nanowires.
Description
CLAIM OF PRIORITY
[0001] This application is a Continuation of International
Application No. PCT/JP2015/080502 filed on Oct. 29, 2015, which
claims benefit of Japanese Patent Application No. 2015-007253 filed
on Jan. 16, 2015. The entire contents of each aforementioned
application is incorporated herein by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0002] The present invention relates to a capacitive sensor
provided with a pattern of a light-transmissive conductive film
containing metal nanowires.
2. Description of the Related Art
[0003] Japanese Unexamined Patent Application Publication No.
2010-191504 discloses a touch switch of a capacitive sensor
including a transparent conductive film having a monolayer
structure. The touch switch disclosed in Japanese Unexamined Patent
Application Publication No. 2010-191504 is composed of a touch
electrode section and a wiring section of a meshed metal wire
extending from the touch electrode. This touch switch configuration
can be realized in compact touch panels, but in large-size panels,
a large number of thin and long wirings are required to be arrayed.
In addition, since the wiring section is made of a metal wire, the
electrical resistance of the wiring section increases with
lengthening and thinning the wiring section.
[0004] In the touch panel described in Japanese Unexamined Patent
Application Publication No. 2009-146419, a plurality of transparent
conductive structures constituted of carbon nanotubes are formed on
a surface of a substrate. In addition, conductive wires formed of
indium tin oxide (ITO) extend from the conductive structures.
However, the conductive wire made of ITO or the like has increased
electrical resistance, and the detection sensitivity is decreased
due to the electrical resistance of the conductive wire.
[0005] In order to solve such a problem, films containing metal
nanowires have been studied as light-transmissive conductive films
having low resistance.
[0006] However, a case using metal nanowires in a
light-transmissive conductive film having a monolayer structure has
a problem in that the electrostatic discharge (ESD) tolerance is
low compared with the case of ITO. The reasons thereof are, for
example, (1) a light-transmissive conductive film containing metal
nanowires has low electrical resistance compared with ITO, (2) even
in the same pattern, a larger amount of current readily flows in
ESD, (3) metal nanowires express conductivity in nano-size
connection and therefore melt at a lower temperature compared with
the melting point of the bulk metal (melt with the heat when a lot
of current flows in a short time), and (4) the actual volume itself
being in a conductive state is small.
SUMMARY OF THE INVENTION
[0007] The present invention provides a capacitive sensor that can
have sufficient ESD tolerance, even if a light-transmissive
conductive film containing metal nanowires is employed.
[0008] In order to solve the above-mentioned problems, the
capacitive sensor of the present invention includes a base material
provided with a pattern of a light-transmissive conductive film.
The capacitive sensor is characterized in that the
light-transmissive conductive film contains metal nanowires and
that the pattern includes a detection pattern of a plurality of
detection electrodes arranged with intervals, a plurality of
lead-out wirings linearly extending in a first direction from
corresponding ones of the detection electrodes, and a
resistance-setting section connected to at least any one of the
lead-out wirings and including a portion extending in a direction
not parallel to the first direction. According to such a
configuration, the lead-out wiring provided with the
resistance-setting section has higher electrical resistance and
enhanced ESD tolerance, compared with the lead-out wirings not
provided with the resistance-setting section.
[0009] In the capacitive sensor of the present invention, the
resistance-setting section may have a fold-back pattern. In such a
configuration, the electrical resistance can be enhanced by the
wiring path elongated by the fold-back pattern.
[0010] In the capacitive sensor of the present invention, the
plurality of the lead-out wirings may have an equal-interval region
where the lead-out wirings are arrayed with a constant first pitch
in a second direction orthogonal to the first direction, the
fold-back pattern may be juxtaposed with the equal-interval region
in the second direction, and the fold-back pattern may include a
plurality of linear pattern portions linearly extending in the
first direction.
[0011] In such a configuration, since the equal-interval region of
the plurality of the lead-out wirings and the fold-back pattern are
constituted of linear portions extending in the same direction, it
is difficult to visually recognize the difference in the patterns
even if the fold-back pattern is disposed.
[0012] In the capacitive sensor of the present invention, the width
of each of the linear pattern portions is preferably the same as
that of the corresponding lead-out wiring, and the pitch of the
linear pattern portions in the second direction may be the same as
the first pitch.
[0013] In such a configuration, the lines and the spaces of the
equal-interval region of the lead-out wirings are substantially the
same as those of the fold-back pattern, which makes visual
recognition of the difference in the patterns further
difficult.
[0014] In the capacitive sensor of the present invention, the first
direction may be the direction toward an external terminal region
from the detection pattern, the plurality of the detection
electrodes may be arranged in the first direction, and the
resistance-setting section may be at least connected to the
lead-out wiring extending from the detection electrode closest to
the external terminal region. According to such a configuration,
the resistance-setting section is provided to the lead-out wiring
having the lowest ESD tolerance, i.e., the lead-out wiring being
the shortest from the detection electrode to the external terminal
region, and the ESD tolerance can be therefore increased.
[0015] In the capacitive sensor of the present invention, the
wiring patterns including the lead-out wirings extending from
corresponding ones of the detection electrodes may have the same
resistance values. According to such a configuration, the ESD
tolerance of the wiring patterns extracted from corresponding ones
of the detection electrodes can be equalized.
[0016] In the capacitive sensor of the present invention, the metal
nanowires may include silver nanowires. According to such a
configuration, the pattern of the light-transmissive conductive
film containing silver nanowires can have enhanced ESD
tolerance.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] FIG. 1 is a plan view illustrating an example of the
conductive pattern of a capacitive sensor according to an
embodiment;
[0018] FIGS. 2A and 2B are schematic views showing examples of a
relationship between detection electrodes and wiring lengths;
[0019] FIGS. 3A to 3C are plan views illustrating other examples of
the resistance-setting section; and
[0020] FIG. 4 is a plan view illustrating an example of a pattern
including dummy patterns and resistance-setting sections.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0021] Embodiments of the present invention will now be described
based on the drawings. In the following descriptions, the same
members are designated with the same reference numerals, and
explanations of members once described are appropriately
omitted.
[0022] Configuration of Capacitive Sensor
[0023] FIG. 1 is a plan view illustrating an example of the
conductive pattern of a capacitive sensor according to an
embodiment.
[0024] As shown in FIG. 1, the capacitive sensor according to the
embodiment has a configuration in which patterns 20 of a
light-transmissive conductive film having a monolayer structure are
provided on a base material 10. The patterns 20 each include a
detection pattern 21, lead-out wirings 22, and a resistance-setting
section 23.
[0025] The base material 10 may be made of any material. Examples
of the material of the base material 10 include inorganic
substrates having light transmissivity and plastic substrates
having light transmissivity. The base material 10 may have any
form. Examples of the form of the base material 10 include films,
sheets, and plates, and the shape may have a flat surface or a
curved surface. Examples of the material of the inorganic substrate
include quartz, sapphire, and glass. Examples of the material of
the plastic substrate include polyesters, such as polyethylene
terephthalate (PET) and polyethylene naphthalate (PEN);
polyolefins, such as polyethylene (PE), polypropylene (PP), and
cycloolefin polymers (COPs); cellulose resins, such as diacetyl
cellulose and triacetyl cellulose (TAC); acrylic resins, such as
polymethyl methacrylate (PMMA); polyimides (PIs); polyamides (PAs);
aramids; polyether sulfones; polysulfones; polyvinyl chlorides;
polycarbonates (PCs); epoxy resins; urea resins; urethane resins;
and melamine resins. The base material 10 may have a monolayer
structure or may have a layered structure.
[0026] The detection pattern 21 includes a plurality of square
detection electrodes 21a. The detection electrodes 21a are arranged
at regular intervals in the X1-X2 direction (second direction) and
the Y1-Y2 direction (first direction). The first direction and the
second direction are orthogonal to each other. FIG. 1 is a
schematic diagram for simplification, and the areas of the
plurality of the detection electrodes 21a are equal to each
other.
[0027] The plurality of the lead-out wirings 22 extend from the
ends on the Y2 side of the plurality of the detection electrodes
21a so as to be parallel to each other along the same direction
(Y1-Y2 direction). More specifically, the plurality of the lead-out
wirings 22 extend from the ends of the detection electrodes 21a on
the Y2 side of the second vertical sides 21c toward the external
terminal region 30.
[0028] The resistance-setting section 23 is connected to at least
any one of the plurality of the lead-out wirings 22. In the example
shown in FIG. 1, the resistance-setting section 23 is connected to
the lead-out wiring 22 extending from the detection electrode 21a
closest to the external terminal region 30. In this case, the
wiring pattern toward the external terminal region 30 from the
detection electrode 21a closest to the external terminal region 30
is composed of a lead-out wiring 22 and a resistance-setting
section 23. The resistance-setting section 23 shown in FIG. 1 has a
fold-back pattern 23a. The fold-back pattern 23a includes a
plurality of linear pattern portions 231 linearly extending in the
Y1-Y2 direction and a plurality of connection pattern portions 232
connecting between the plurality of the linear pattern portions 231
alternately on the Y1 side and the Y2 side.
[0029] The fold-back pattern 23a is formed in a shape folded back
at a constant pitch in the X1-X2 direction by the linear pattern
portions 231 and the connection pattern portions 232. The end of
the lead-out wiring 22 is connected to the end of the endmost
linear pattern portion 231 via the connection pattern portion
232.
[0030] The current path of the wiring pattern toward the external
terminal region 30 from the detection electrode 21a is elongated by
disposing the resistance-setting section 23, compared with the case
not disposing the resistance-setting section 23. The electrical
resistance is enhanced with an increase in the current path.
Accordingly, the lead-out wiring 22 provided with the
resistance-setting section 23 has higher electrical resistance,
compared with the case not disposing the resistance-setting section
23, and the ESD tolerance can be enhanced.
[0031] FIGS. 2A and 2B are schematic views showing examples of a
relationship between detection electrodes and wiring lengths.
[0032] FIG. 2A shows a wiring pattern not including any
resistance-setting section 23, and FIG. 2B shows a wiring pattern
including a resistance-setting section 23. For convenience of
explanation, FIGS. 2A and 2B each show only a part of the pattern
20.
[0033] Herein, in FIG. 2A, the distance from the end on the Y2 side
of the detection electrode 21a-1 closest to the external terminal
region 30 to the external terminal region 30 is denoted as D1; the
length of the wiring pattern from the detection electrode 21a-1 to
the external terminal region 30 is denoted as L1; the distance from
the end on the Y2 side of the detection electrode 21a-2, which is
farther from the external terminal region 30 than the detection
electrode 21a-1, to the external terminal region 30 is denoted as
D2; and the length of the wiring pattern from the detection
electrode 21a-2 to the external terminal region 30 is denoted as
L2. In FIG. 2A, the length of the wiring pattern is that of the
lead-out wiring 22. When the resistance-setting section 23 is not
disposed, the following relational expression (1) is satisfied:
D1/D2=L1/L2 (1).
[0034] Similarly, in FIG. 2B, the distance from the end on the Y2
side of the detection electrode 21a-1 to the external terminal
region 30 is denoted as D1; the wiring length from the detection
electrode 21a-1 to the external terminal region 30 is denoted as
L1'; the distance from the end on the Y2 side of the detection
electrode 21a-2 to the external terminal region 30 is denoted as
D2; and the wiring length from the detection electrode 21a-2 to the
external terminal region 30 is denoted as L2. In FIG. 2B, the
length of the wiring pattern is that of the lead-out wiring 22 or
the sum of the length of the lead-out wiring 22 and the length of
the resistance-setting section 23. When the resistance-setting
section 23 is disposed, the following relational expression (2) is
satisfied:
D1/D2<L1'/L2 (2).
[0035] When the length of the wiring pattern is determined so as to
satisfy the relational expression (2), the ESD tolerance can be
enhanced even in the detection electrode 21a-1 disposed near the
external terminal region 30.
[0036] Herein, in the resistance-setting section 23 including the
fold-back pattern 23a, the resistance-setting section 23 may be
disposed so as to align with the equal-interval region S1 where the
lead-out wirings 22 are aligned parallel to the Y1-Y2 direction. In
the equal-interval region S1, the lead-out wirings 22 are arrayed
with a constant pitch (first pitch) in the X1-X2 direction. As the
fold-back pattern 23a, the pitch in the X1-X2 direction of the
linear pattern portions 231 is preferably equal to the first pitch.
As a result, the configuration is composed of the linear portions
of the equal-interval region S1 of the lead-out wirings 22 and the
fold-back pattern 23a extending in the same direction. Accordingly,
even in observation from an angle at which the intensity of
reflection/scattering from the pattern edges of the linear portion
of the equal-interval region S1 is increased, the intensity of
reflection/scattering in the linear pattern portions 231 of the
fold-back pattern 23a is similarly increased. Consequently, the
difference in ease of visual recognition is decreased, and the
difference in pattern becomes difficult to be visually recognized
even if the fold-back pattern 23a is disposed. In addition, since
the lines and the spaces of the equal-interval region S1 of the
lead-out wirings 22 are substantially the same as those of the
fold-back pattern 23a, the difference in the intensity of
reflection/scattering is further decreased, and the difference in
the intensity of transmitted light is also decreased. Accordingly,
the difference in pattern becomes further difficult to be visually
recognized even if the fold-back pattern 23a is disposed.
[0037] Detection Operation
[0038] In the capacitive sensor according to the embodiment,
capacitance is formed between adjacent ones of the plurality of the
detection electrodes 21a. If a finger is brought into contact with
or is brought near the surface of a detection electrode 21a,
capacitance is formed between the finger and the detection
electrode 21a near the finger. Accordingly, measurement of the
current value detected from the detection electrodes 21a allows to
detect which electrode of the plurality of the detection electrodes
21a is closest to the finger.
[0039] Constituent Material
[0040] The light-transmissive conductive film forming the pattern
20 contains conductive metal nanowires. The metal nanowires may be
made of any material. Examples of the material of the metal
nanowires include materials containing one or more metal elements
selected from Ag, Au, Ni, Cu, Pd, Pt, Rh, Ir, Ru, Os, Fe, Co, and
Sn. The metal nanowires may have any average minor axis diameter,
and the average minor axis diameter of the metal nanowires is
preferably larger than 1 nm and not larger than 500 nm. The metal
nanowires may have any average major axis diameter, and the average
major axis diameter of the metal nanowires is preferably larger
than 1 .mu.m and not larger than 1000 .mu.m.
[0041] In order to improve the dispersibility of the metal
nanowires in a nanowire ink forming the light-transmissive
conductive film, the metal nanowires may be surface-treated with an
amino group-containing compound, such as polyvinylpyrrolidone (PVP)
and polyethyleneimine. The compound for the surface treatment is
preferably used in an amount of not deteriorating the conductivity
when formed into a coating film. In addition, a compound having a
functional group and being adsorbable to a metal may be used as a
dispersant. Examples of the functional group include a sulfo group
(including sulfonate), a sulfonyl group, a sulfonamide group, a
carboxylic acid group (including carboxylate), an amide group, a
phosphoric acid group (including phosphate and phosphate ester), a
phosphino group, a silanol group, an epoxy group, an isocyanate
group, a cyano group, a vinyl group, a thiol group, and a carbinol
group.
[0042] The dispersant for the nanowire ink may be of any type.
Examples of the dispersant for the nanowire ink include water,
alcohols (e.g., methanol, ethanol, n-propanol, i-propanol,
n-butanol, i-butanol, sec-butanol, and tert-butanol), ketones
(e.g., cyclohexanone and cyclopentanone), amides (e.g.,
N,N-dimethylformamide (DMF)), and sulfoxides (e.g.,
dimethylsulfoxide (DMSO)). The dispersant for the nanowire ink may
be composed of one material or may be composed of a plurality of
materials.
[0043] In order to prevent uneven drying of the nanowire ink and
cracking, the evaporation rate of the solvent may be controlled by
further adding a high boiling point solvent. Examples of the high
boiling point solvent include butyl cellosolve, diacetone alcohol,
butyl triglycol, propylene glycol monomethyl ether, propylene
glycol monoethyl ether, ethylene glycol monoethyl ether, ethylene
glycol monopropyl ether, ethylene glycol monoisopropyl ether,
diethylene glycol monobutyl ether, diethylene glycol monoethyl
ether, diethylene glycol monomethyl ether, diethylene glycol
diethyl ether, dipropylene glycol monomethyl ether, tripropylene
glycol monomethyl ether, propylene glycol monobutyl ether,
propylene glycol isopropyl ether, dipropylene glycol isopropyl
ether, tripropylene glycol isopropyl ether, and methyl glycol. The
high boiling point solvents may be used alone or in combination of
two or more thereof.
[0044] The binder material applicable to the nanowire ink can be
widely selected from known transparent natural and synthetic
polymer resins. For example, a transparent thermoplastic resin or a
transparent curable resin that is cured by heat, light, electron
beam, or radiation can be used. Examples of the transparent
thermoplastic resin include polyvinyl chloride, vinyl
chloride-vinyl acetate copolymers, polymethyl methacrylate,
nitrocellulose, chlorinated polyethylene, chlorinated
polypropylene, vinylidene fluoride, ethyl cellulose, and
hydroxypropyl methyl cellulose. Examples of the transparent curable
resin include melamine acrylate, urethane acrylate, isocyanate,
epoxy resins, polyimide resins, and silicone resins, such as
acrylic modified silicate. The nanowire ink may further contain an
additive. Examples of the additive include surfactants, viscosity
modifiers, dispersants, curing accelerating catalysts,
plasticizers, and stabilizers, such as antioxidants and sulfidation
inhibitors.
[0045] Other examples of resistance-setting section
[0046] Other examples of the resistance-setting section 23 will now
be described.
[0047] FIGS. 3A to 3C are plan views illustrating other examples of
the resistance-setting section. For convenience of explanation,
FIGS. 3A to 3C each show only a part of the pattern 20.
[0048] In the example shown in FIG. 3A, a resistance-setting
section 23 is also provided to the lead-out wiring 22 of another
detection electrode 21a in addition to the lead-out wiring 22 of
the detection electrode 21a-1 closest to the external terminal
region 30. In such a configuration, the wiring patterns of all
detection electrodes 21a can have the same length and the variation
in ESD tolerance can be suppressed.
[0049] In the example shown in FIG. 3B, the linear pattern portion
231 of the fold-back pattern 23a extends in the X1-X2 direction.
That is, in the fold-back patterns 23a shown in FIG. 1 and FIG. 3B,
the extending directions of the linear pattern portions 231 are
different by 90.degree. from each other.
[0050] In the example shown in FIG. 3C, the linear pattern portion
231 of the fold-back pattern 23a extends in directions not parallel
to both the X1-X2 direction and the Y1-Y2 direction. Thus, the
linear pattern portion 231 of the fold-back pattern 23a may extend
in any direction and the fold-back pattern 23a may have any pattern
shape, and the fold-back pattern 23a can function as a
resistance-setting section 23, as long as the resistance value is
increased by increasing the wiring length.
[0051] FIG. 4 is a plan view illustrating an example of a pattern
including dummy patterns and resistance-setting sections.
[0052] The dummy pattern DP is a slit-like pattern provided to each
detection electrode 21a. The detection electrode 21a is provided
with a plurality of dummy patterns DP extending in parallel to each
other in the Y1-Y2 direction. A region of lines and spaces of the
detection electrode 21a is thus formed.
[0053] When the dummy patterns DP are disposed, it is desirable
that the width and the pitch of the lines and spaces in each
detection electrode 21a formed by the dummy patterns DP coincide
with the width and the pitch of the lines and spaces in the
equal-interval region S1 of the plurality of the lead-out wirings
22. It is also desirable that the width and the pitch of the lines
and spaces in the fold-back pattern 23a juxtaposed with the
equal-interval region S1 coincide with the width and the pitch of
the lines and spaces in the equal-interval region S1. Consequently,
lines having the same width and spaces having the same width are
disposed in the wide region of the entire pattern 20, which can
make the pattern 20 inconspicuous.
[0054] Although embodiments and modification examples thereof have
been described above, the present invention is not limited thereto.
For example, those obtained by appropriate addition of components,
deletion, or change in design of the above-described embodiments
and modification examples thereof by those skilled in the art and
those obtained by appropriate combinations of features of the
embodiments and the modification examples are also included in the
scope of the present invention as long as they have the gist of the
present invention.
[0055] As described above, since the capacitive sensor according to
the present invention has excellent ESD tolerance in spite of a
monolayer structure, the sensor is useful for large touch panels
including light-transmissive conductive films, and a
light-transmissive pattern that is hardly visually recognized by a
user can be formed.
* * * * *