U.S. patent application number 15/339153 was filed with the patent office on 2017-10-19 for device and method for maskless thin film etching.
The applicant listed for this patent is Applied Materials, Inc.. Invention is credited to Jeffrey L. Franklin, Michael Yu-Tak Young.
Application Number | 20170301928 15/339153 |
Document ID | / |
Family ID | 60038434 |
Filed Date | 2017-10-19 |
United States Patent
Application |
20170301928 |
Kind Code |
A1 |
Young; Michael Yu-Tak ; et
al. |
October 19, 2017 |
DEVICE AND METHOD FOR MASKLESS THIN FILM ETCHING
Abstract
A device for maskless thin film etching, including an ablation
tool adapted to emit an ablative output for etching a surface, a
gas jet associated with a source of carrier gas and adapted to emit
a stream of the carrier gas at an area of the surface where the
output of the ablation tool impinges, and a suction member
associated with a vacuum source and adapted to collect ablated
particulate from the area of the surface where the output of the
ablation tool impinges, wherein the ablation tool, the gas jet, and
the suction member are mounted adjacent one another.
Inventors: |
Young; Michael Yu-Tak;
(Cupertino, CA) ; Franklin; Jeffrey L.;
(Albuquerque, NM) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Applied Materials, Inc. |
Santa Clara |
CA |
US |
|
|
Family ID: |
60038434 |
Appl. No.: |
15/339153 |
Filed: |
October 31, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62322415 |
Apr 14, 2016 |
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01J 37/3426 20130101;
H01M 4/525 20130101; B23K 26/0006 20130101; H01M 10/052 20130101;
B23K 2101/34 20180801; H01M 6/005 20130101; H01M 10/0436 20130101;
Y02T 10/70 20130101; H01M 10/0585 20130101; C23C 14/50 20130101;
H01M 10/0525 20130101; B23K 26/142 20151001; B23K 2101/36 20180801;
H01M 2/0207 20130101; H01M 4/382 20130101; B29C 59/16 20130101;
H01J 37/32715 20130101; H01M 6/40 20130101; B29L 2031/3468
20130101; Y02E 60/10 20130101; H01M 2300/0068 20130101; B23K 26/362
20130101; H01M 2/1094 20130101; H01M 2/08 20130101; H01M 6/18
20130101; B29K 2995/0006 20130101; H01M 2220/30 20130101; H01M
2300/0065 20130101; H01M 2/0267 20130101; H01M 2/0287 20130101;
H01M 6/188 20130101; B23K 2103/172 20180801; C23C 14/34 20130101;
H01M 2/026 20130101 |
International
Class: |
H01M 6/40 20060101
H01M006/40; B23K 26/00 20140101 B23K026/00; B23K 26/362 20140101
B23K026/362; B23K 26/142 20140101 B23K026/142; H01M 6/18 20060101
H01M006/18; B29C 59/16 20060101 B29C059/16; H01M 6/00 20060101
H01M006/00 |
Claims
1. A device for maskless thin film etching comprising: an ablation
tool; a gas jet associated with a source of carrier gas and adapted
to emit a stream of the carrier gas; and a suction member
associated with a vacuum source and adapted to collect gas and
particulate; wherein the ablation tool, the gas jet, and the
suction member are mounted adjacent one another.
2. The device of claim 1, wherein the ablation tool, the gas jet,
and the suction member are mounted adjacent one another on a
carrier arm, wherein the carrier arm is adapted to move the
ablation tool, the gas jet, and the suction member relative to a
surface to be etched.
3. The device of claim 1, wherein the ablation tool is a laser.
4. The device of claim 1, wherein the ablation tool is adapted to
emit an abrasive media.
5. The device of claim 1, wherein the gas jet is adapted to emit
the stream of the carrier gas at an area of a surface where an
output of the ablation tool impinges.
6. The device of claim 1, wherein the carrier gas is an inert gas
selected for an ability to suppress formation of laser-induced
plasma.
7. The device of claim 1, wherein the suction member is adapted to
collect ablated particulate from an area of a surface where an
output of the ablation tool impinges.
8. The device of claim 1, further comprising a controller
operatively coupled to the ablation tool, the gas jet, and the
suction member and configured to operate the ablation tool, the gas
jet, and the suction member in a predefined, coordinated
manner.
9. The device of claim 8, wherein the controller is configured to
direct the ablation tool and to move the gas jet and the suction
member along a predefined path to etch a predefined pattern in a
surface with the ablation tool.
10. A device for maskless thin film etching comprising: an ablation
tool adapted to emit an ablative output for etching a surface; a
gas jet associated with a source of carrier gas and adapted to emit
a stream of the carrier gas at an area of the surface where the
output of the ablation tool impinges; and a suction member
associated with a vacuum source and adapted to collect ablated
particulate from the area of the surface where the output of the
ablation tool impinges; wherein the ablation tool, the gas jet, and
the suction member are mounted adjacent one another.
11. The device of claim 10, wherein the ablation tool includes at
least one of a laser and a media blaster.
12. A method for maskless thin film etching comprising: positioning
an ablation tool adjacent a surface to be etched; positioning a gas
jet adjacent the ablation tool, wherein the gas jet is associated
with a source of carrier gas and is adapted to emit a stream of the
carrier gas; and positioning a suction member adjacent the ablation
tool, wherein the suction member associated with a vacuum source
and is adapted to collect gas and particulate.
13. The method of claim 12, wherein the ablation tool, the gas jet,
and the suction member are mounted on a carrier arm, the method
further comprising moving the carrier arm relative to the
surface.
14. The method of claim 12, wherein the ablation tool is a
laser.
15. The method of claim 12, wherein the ablation tool is adapted to
emit an abrasive media.
16. The method of claim 12, further comprising the gas jet emitting
the stream of the carrier gas at an area of the surface where an
output of the ablation tool impinges.
17. The method of claim 12, wherein the carrier gas is an inert gas
selected for an ability to suppress formation of laser-induced
plasma.
18. The method of claim 12, further comprising the suction member
collecting ablated particulate from an area of the surface where an
output of the ablation tool impinges.
19. The method of claim 12, further comprising a controller
operating the ablation tool, the gas jet, and the suction member in
a predefined, coordinated manner.
20. The method of claim 19, further comprising the controller
directing the ablation tool and moving the gas jet and the suction
member along a predefined path to etch a predefined pattern in the
surface with the ablation tool.
Description
RELATED APPLICATIONS
[0001] This Application claims priority to U.S. provisional patent
application No. 62/322,415, filed Apr. 14, 2016, entitled "Volume
Change Accommodating TFE Materials" and incorporated by reference
herein in its entirety.
FIELD
[0002] The present embodiments relate generally to the fabrication
of thin film devices, and more particularly to maskless etching
devices and techniques for the fabrication of thin film
batteries.
BACKGROUND
[0003] Solid state thin film batteries (TFBs) are known to exhibit
several advantages over conventional battery technologies. These
advantages include superior form factors, cycle life, power
capability, and safety. An embodiment of a TFB may include a
plurality of layers disposed in a stacked arrangement, such layers
including a cathode current collector layer, a cathode layer, a
solid state electrolyte, an anode layer, an anode current collector
layer, and an encapsulation layer, for example. These layers are
commonly formed by successive deposition of the layers on a
substrate using a deposition tool. After certain layers are
deposited, portions of the layers may be removed or "etched" before
additional layers are deposited. In this manner a TFB having a
predetermined layer profile or architecture may be achieved.
[0004] The etching of TFB layers has traditionally been
accomplished using so-called "masked" etching techniques involving
the use of a physical mask placed over a layer (or layers) to be
etched. The mask covers certain portions of the layer and leaves
other portions exposed. The masked layer is subjected to a blanket
ablation (e.g., via exposure to heat, solvent, ion bombardment,
etc.), resulting in the exposed portions of the masked layer being
removed while the covered portions are left intact.
[0005] More recently, so-called "maskless" etching techniques have
been developed for selectively removing portions of TFB layers
during manufacture. Maskless etching involves the use of a
precision ablation tool (e.g., a laser) to etch discrete portions
of a TFB layer (or layers) while leaving other portions of the
layer intact. Despite being less expensive and facilitating higher
throughput relative to masked etching, maskless etching is
nonetheless associated with certain shortcomings. For example, a
laser ablation tool can generate plasma and can create so-called
"heat affected zones" (HAZs) immediately adjacent the ablation beam
path, possibly damaging portions of an etched layer. A laser
ablation tool can also disperse ablated particulate matter in the
vicinity an ablation beam path. Either of these phenomena can
facilitate the propagation of leakage currents in an affected
layer, resulting in a defective or sub-standard TFB.
[0006] With respect to these and other considerations the present
disclosure is provided.
BRIEF SUMMARY
[0007] This Summary is provided to introduce a selection of
concepts in a simplified form further described below in the
Detailed Description. This Summary is not intended to identify key
or essential features of the claimed subject matter, nor is this
Summary intended as an aid in determining the scope of the claimed
subject matter.
[0008] An exemplary embodiment of a device for maskless thin film
etching in accordance with the present disclosure may include an
ablation tool, a gas jet associated with a source of carrier gas
and adapted to emit a stream of the carrier gas, and a suction
member associated with a vacuum source and adapted to collect gas
and particulate. The ablation tool, the gas jet, and the suction
member are mounted adjacent one another.
[0009] Another exemplary embodiment of a device for maskless thin
film etching in accordance with the present disclosure may include
an ablation tool adapted to emit an ablative output for etching a
surface. The device may further include a gas jet associated with a
source of carrier gas and adapted to emit a stream of the carrier
gas at an area of the surface where the output of the ablation tool
impinges. The device may further include a suction member
associated with a vacuum source and adapted to collect ablated
particulate from the area of the surface where the output of the
ablation tool impinges. The ablation tool, the gas jet, and the
suction member are mounted adjacent one another.
[0010] An exemplary embodiment of a method for maskless thin film
etching in accordance with the present disclosure may include
positioning an ablation tool adjacent a surface to be etched. The
method may further include positioning a gas jet adjacent the
ablation tool, wherein the gas jet is associated with a source of
carrier gas and is adapted to emit a stream of the carrier gas, and
positioning a suction member adjacent the ablation tool, wherein
the suction member associated with a vacuum source and is adapted
to collect gas and particulate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] FIG. 1 is a cross-sectional view illustrating an exemplary
thin-film battery structure contemplated for fabrication by the
disclosed device and method;
[0012] FIG. 2 is a schematic illustration of an exemplary
embodiment of an etching device in accordance with the present
disclosure;
[0013] FIG. 3 is a flow diagram illustrating an exemplary method in
accordance with the present disclosure.
DETAILED DESCRIPTION
[0014] The present embodiments will now be described more fully
hereinafter with reference to the accompanying drawings, where some
embodiments are shown. The subject matter of the present disclosure
may be embodied in many different forms and are not to be construed
as limited to the embodiments set forth herein. These embodiments
are provided so this disclosure will be thorough and complete, and
will fully convey the scope of the subject matter to those skilled
in the art. In the drawings, like numbers refer to like elements
throughout.
[0015] The present disclosure relates to a device and method for
masklessly etching layers of thin film batteries (TFBs) during
manufacture. Particularly, the disclosed device and method are
directed toward mitigating manufacturing defects associated with
maskless ablation techniques, and specifically those defects
stemming from plasma generation and re-deposition of ablated
particulate in the vicinity of an ablated area of a TFB layer.
[0016] In general, the disclosed device and method may include an
ablation tool (e.g., a laser) for etching discrete, predetermined
portions of the layers of a TFB after the layers have been
deposited on a substrate. The disclosed device and method further
include a gas jet and a suction member disposed adjacent the
ablation tool. The gas jet may be coupled to a gas source
containing a pressurized carrier gas and may be configured to
direct a stream of the pressurized carrier gas toward a point where
the ablation tool impinges on an ablated surface (e.g., a surface
of a layer of a TFB). The suction member may be coupled to a vacuum
source and may be configured to draw gas and particulate away from
the point where the ablation tool impinges on an ablated surface.
Thus, the pressurized carrier gas emitted from the gas jet may
provide a medium for entraining ablated particulate generated by
the ablation tool, and the suction member may evacuate the carrier
gas and the entrained particulate from the ablation site. The
ablated particulate is thus prevented from redepositing on the
etched surface. In various embodiments, the carrier gas may be an
inert gas selected for an ability to suppress plasma formation in
the vicinity of the ablation site for mitigating the creation of
heat affected zones (HAZs) in surrounding portions of the etched
surface.
[0017] As will be appreciated, the disclosed device and method can
be implemented in the manufacture of a variety of different TFB
architectures. FIG. 1 illustrates a cross-sectional view of a
non-limiting, exemplary TFB 10 amenable to fabrication using the
device and method described herein. The illustrated TFB 10 may
include a stack of layers 12 fabricated on a substrate 14. The
stack of layers 12 may include a cathode current collector (CCC)
layer 16, a cathode layer 18, a solid state electrolyte layer 20,
an anode/anode current collector (ACC) layer 24, and an
encapsulation layer 26. In one non-limiting embodiment, the
encapsulation layer 26 may be formed of a plurality of alternating
polymer and dielectric layers 28, 29 for providing the
encapsulation layer 26 with resiliency to accommodate thermal
expansion and contraction of the TFB 10. The CCC may be formed of a
metal layer (e.g., Au or Pt) or a plurality of metal layers (e.g.,
Ti and Au or Ti and Pt) capable of good adhesion to the substrate
14 and capable of withstanding high temperature annealing of the
cathode layer 18. The cathode layer 18 may be formed of lithium
cobalt oxide (LiCoO.sub.2) or a similar material. The solid state
electrolyte layer 20 may be formed of lithium phosphorus oxynitride
(LiPON) or similar material. The ACC layer 24 may be formed of
copper or similar material.
[0018] The device and method disclosed herein may be utilized to
etch portions of the various layers 12 of the TFB 10 as the various
layers 12 are deposited atop the substrate 14 (e.g., in between
depositions) to achieve a predetermined TFB architecture. For
example, the TFB 10 depicted in FIG. 1 has a so-called
"non-coplanar" architecture wherein the CCC layer 16 is not
coplanar with the ACC layer 24. Of course, FIG. 1 merely
illustrates one possible arrangement for a TFB architecture
amendable to fabrication using the device and method described
below, and those of ordinary skill in the art will appreciate the
concepts disclosed herein can be implemented to achieve various
other TFB architectures. A non-limiting example of such an
alternative architecture is a so-called "coplanar" architecture
having a CCC layer coplanar with an ACC layer.
[0019] Referring to FIG. 2, a schematic illustration of an etching
device 30 (hereinafter "the device 30") in accordance with a
non-limiting embodiment of the present disclosure is shown. The
device 30 may generally include an ablation tool 32, a gas jet 34,
and a suction member 36 mounted adjacent one another on a movable
carrier arm 38. The carrier arm 38 may be adapted to selectively
move the ablation tool 32, gas jet 34, and suction member 36
vertically and horizontally relative to a surface 44 (e.g., a
surface of a layer of a TFB) to be etched as further described
below. In various alternative embodiments, the device 30 may have a
fixed, static position (e.g., omitting a movable carrier arm) and
the surface 44 may be vertically and horizontally movable relative
to the device 30. In various other embodiments, the device 30 and
the surface 44 may be movable.
[0020] The ablation tool 32 may be, and will be described
hereinafter as, a laser adapted to emit a laser beam 46 from a tip
48 of the ablation tool 32 as shown in FIG. 2. In various
alternative embodiments, the ablation tool 32 may be any type of
precision ablation device, such as a media jet or blaster adapted
to emit a jet of abrasive media (e.g., silica sand) suspended in a
stream of pressurized gas. Abrasive media ablation may provide
certain advantages relative to laser ablation, including the
absence of laser-induced plasma and associated HAZs on the surface
44. In other embodiments, the etching device 30 may include a laser
and a media jet capable of being implemented selectively and
interchangeably. In various embodiments wherein the ablation tool
32 is a laser, the laser may be a laser scanner independent of the
carrier arm 38 and capable of scanning a laser beam at speeds of 50
meters per second or higher, much faster than can be achieved
through mechanical movement of the carrier arm 38.
[0021] The ablation tool 32 may be operably connected to an
electrical power source 50 and to a controller 52. The controller
52 may be adapted to dictate operation of the carrier arm 38 and
the ablation tool 32 in a predetermined or preprogrammed manner,
such as to etch a predefined pattern in the surface 44. If the
ablation tool 32 is a media blaster or a similar device configured
to emit a jet of abrasive media, the ablation tool 32 may
additionally be coupled to a pressurized gas source and to a source
of abrasive media (not shown) as may be appropriate.
[0022] The gas jet 34 of the device 30 may be coupled to a
pressurized carrier gas source 54 and may be configured to emit a
stream 56 of pressurized carrier gas from a tip 58 of the gas jet
34 disposed in close proximity to (e.g., in a range of 0.25
millimeters to 300 millimeters from) the tip 48 of the ablation
tool 32. The stream 56 may be directed toward an area 58 of the
surface 44 where the laser beam 46 emitted by the ablation tool 32
impinges. The gas jet 34 may further be coupled to the controller
52, wherein the controller 52 may be configured to dictate
operation of the gas jet 34. For example, the controller 52 may be
configured to operate the gas jet 34 in concert with the ablation
tool 32, with the gas jet 34 being activated when the ablation tool
32 is active. In various embodiments, the controller 52 may be
configured to activate the gas jet 34 a predetermined amount of
time before or after activation of the ablation tool 32, and may be
configured to deactivate the gas jet 34 a predetermined amount of
time before or after deactivation of the ablation tool 32. The
embodiments of the present disclosure are not limited in this
regard.
[0023] In various embodiments, the carrier gas emitted by the gas
jet 34 may be any gas suitable for use within the vicinity of the
surface 44. Examples of such gases include, with, clean dry air
(CDA) with less than or equal to 8% moisture content, argon gas,
nitrogen gas, etc. In various embodiments, the carrier gas may be
specifically selected for an ability to suppress the formation of
laser-induced plasma at the area 58 where the laser beam 46 emitted
by the ablation tool 32 impinges. Non-limiting examples of such
inert gases include Argon, Nitrogen, etc. The suppression of
laser-induced plasma at the area 58 may mitigate the formation of
HAZs in surrounding portions of the surface 44. More generally, the
carrier gas may be selected based on factors such as the type and
power of the laser emitted by the ablation tool 32, the nature of
the environment of the surface 44, the material of the surface 44,
etc.
[0024] The suction member 36 of the device 30 may be coupled to a
vacuum source 60 and may be configured to collect gas and/or
particulate (as further described below) at an inlet 62 of the
suction member 36 disposed in close proximity to (e.g., in a range
of 0.25 millimeters to 300 millimeters from) the tip 48 of the
ablation tool 32. Specifically, the inlet 62 may be disposed in the
path of the stream 56 of carrier gas emitted by the gas jet 34 and
may be directed toward the area 58 where the laser beam 46 impinges
on the surface 44. The suction member 36 may further be coupled to
the controller 52, wherein the controller 52 may be configured to
dictate operation of the suction member 36. For example, the
controller 52 may be configured to operate the suction member 36 in
concert with the ablation tool 32 and/or the gas jet 34, with the
suction member 36 being activated when the ablation tool 32 and/or
the gas jet 34 are active. In various embodiments, the controller
52 may be configured to activate the suction member 36 a
predetermined amount of time before or after activation of the
ablation tool 32 and/or the gas jet 34, and may be configured to
deactivate the suction member 36 a predetermined amount of time
before or after deactivation of the ablation tool 32 and/or the gas
jet 34. The embodiments of the present disclosure are not limited
in this regard.
[0025] During operation of the device 30, the suction member 36 may
collect vapor and ablated particulate from the impingement area 58,
wherein the ablated particulate may be suspended in the stream 56
of pressurized carrier gas emitted from the gas jet 34. If the
ablation tool 32 is a media blaster or a similar device configured
to emit a jet of abrasive media, the suction member 36 may collect
the media emitted by the ablation tool 32 (i.e., after the media
has impinged on the surface 44) as well as any gas suspending the
media. The media and the suspension gas may be directed toward the
inlet 62 of the suction member 36 by the stream 56 of the
pressurized carrier gas emitted from the gas jet 34. Thus, the
suction member 36 may prevent ablated particulate and any abrasive
media (if abrasive media is used) from depositing on the surface
44, mitigating any undesirable effects associated with such
deposition. The suction member 36 may also prevent the distribution
and accumulation of carrier gas emitted by the gas jet 34 in the
environment of the surface 44.
[0026] Referring to FIG. 3, a flow diagram illustrating an
exemplary embodiment of a method for implementing the device 30 in
accordance with the present disclosure is shown. The method will
now be described in detail in conjunction with the schematic
representation of the device 30 shown in FIG. 2.
[0027] At block 100 of the illustrated method, the carrier arm 38
of the device 30 may be operated move the ablation tool 32, the gas
jet 34, and the suction member 36 to a designated position above a
surface (e.g., the surface 44 shown in FIG. 2) to be etched. The
movement of the carrier arm 38 may be dictated and coordinated by
the controller 52, and the designated position may be a position
wherein the tip 48 of the ablation tool 32 is positioned directly
above a starting point of a predetermined pattern to be etched in
the surface 44.
[0028] At block 110 of the illustrated method, the ablation tool 32
may be activated (e.g., by the controller 52) and may emit a laser
beam 46 (if the ablation tool 32 is a laser) or a jet of abrasive
media (if the ablation tool 32 is media jet or blaster),
collectively referred to as an "output" of the ablation tool 32, to
etch an area 58 of the surface 44 where the output impinges.
[0029] At block 120 of the illustrated method, the gas jet 34 may
be activated (e.g., by the controller 52) and may emit the stream
56 of pressurized carrier gas from the tip 58 of the gas jet 34
toward the impingement area 58 on the surface 44. The gas jet 34
may be operated in concert with the ablation tool 32, with the gas
jet 34 being activated when the ablation tool 32 is activated. In
various embodiments, the gas jet 34 may be activated a
predetermined amount of time before or after activation of the
ablation tool 32. As described above, stream 56 of carrier gas may
entrain ablated particulate adjacent the impingement area 58.
Additionally, if the carrier gas is selected appropriately (e.g.,
if the carrier gas is an inert gas), the carrier gas may suppress
the formation of laser-induced plasma at the impingement area 58,
mitigating the formation of HAZs adjacent the impingement area
58.
[0030] At block 130 of the illustrated method, the suction member
36 may be activated (e.g., by the controller 52) and may collect
vapor and ablated particulate from the impingement area 58, wherein
the ablated particulate may be suspended in the stream 56 of
pressurized carrier gas emitted from the gas jet 34. If the
ablation tool 32 is a media blaster or a similar device configured
to emit a jet of abrasive media, the suction member 36 may collect
the media emitted by the ablation tool 32 (i.e., after the media
has impinged on the surface 44) as well as any gas suspending the
media. The media and the suspension gas may be directed toward the
inlet 62 of the suction member 36 by the stream 56 of the
pressurized carrier gas emitted from the gas jet 34. Thus, the
suction member 36 may prevent ablated particulate and abrasive
media (if abrasive media is used) from depositing on the surface
44, mitigating any undesirable effects associated with such
deposition. The suction member 36 may also prevent the distribution
and accumulation of carrier gas emitted by the gas jet 34 in the
environment of the surface 44. The suction member 36 may be
operated in concert with the ablation tool 32 and/or the gas jet
34, with the suction member 36 being activated when the ablation
tool 32 and/or the gas jet 34 are activated. In various
embodiments, the suction member 36 may be activated a predetermined
amount of time before or after activation of the ablation tool 32
and/or the gas jet 34.
[0031] At block 140 of the illustrated method, the controller 52
may operate the carrier arm 38 to move the ablation tool 32, the
gas jet 34, and the suction member 36 along a predetermined path
relative to the surface 44, such as for etching a predetermined
pattern in the surface 44. For example, the active ablation tool 32
may be moved along a path defining the predetermined pattern. If
the ablation tool 32 is not mounted on the carrier arm 38 (e.g., if
the ablation tool 32 is a laser scanner), the controller 52 may
operate the ablation tool 32 to impinge on the surface 44 in the
predefined pattern. The predefined pattern may be stored in a
memory of the controller 52 or may be communicated to the
controller 52 via external input means, for example. As the pattern
is etched in the surface 44, the active gas jet 34 and suction
member 36 may operate in the manner described above to collect
vapor and particulate and to suppress the formation of
laser-induced plasma in the etched surface 44.
[0032] At block 150 of the illustrated method, after a
predetermined pattern has been etched into the surface 44, the
ablation tool 32, the gas jet 34, and the suction member 36 may be
deactivated (e.g., by the controller 52). In various embodiments,
the gas jet 34 may be activated a predetermined amount of time
before or after deactivation of the ablation tool 32, and the
suction member 36 may be deactivated a predetermined amount of time
before or after deactivation of the ablation tool 32 and/or the gas
jet 34.
[0033] The device and method of the present disclosure provide
numerous advantages. These include precise, maskless etching of a
TFB layer while suppressing the formation of laser-induced plasma
(in the case of laser ablation) and preventing the deposition of
etched material on the etched layer. The device and method of the
present disclosure further facilitate high-precision ablation of a
TFB layer using abrasive media while preventing the deposition of
the abrasive media on the etched layer. HAZs and leakage currents
in etched layers are thus mitigated, facilitating the manufacture
of better performing and more reliable TFBs.
[0034] The present disclosure is not to be limited in scope by the
specific embodiments described herein. Indeed, other various
embodiments of, and modifications to, the present disclosure, in
addition to those described herein, will be apparent to those of
ordinary skill in the art from the foregoing description and
accompanying drawings. Thus, such other embodiments and
modifications are in the tended to fall within the scope of the
present disclosure. Furthermore, the present disclosure has been
described herein in the context of a particular implementation in a
particular environment for a particular purpose, while those of
ordinary skill in the art will recognize the usefulness is not
limited thereto and the present disclosure may be beneficially
implemented in any number of environments for any number of
purposes. Thus, the claims set forth below are to be construed in
view of the full breadth and spirit of the present disclosure as
described herein.
* * * * *