U.S. patent application number 15/635008 was filed with the patent office on 2017-10-19 for transparent oled light extraction.
This patent application is currently assigned to 3M Innovative Properties Company. The applicant listed for this patent is 3M INNOVATIVE PROPERTIES COMPANY. Invention is credited to Jonathan A. Anim-addo, Ghidewon Arefe, Keith L. Behrman, Sergey Lamansky, Steven J. McMan, William A. Tolbert.
Application Number | 20170301888 15/635008 |
Document ID | / |
Family ID | 49036647 |
Filed Date | 2017-10-19 |
United States Patent
Application |
20170301888 |
Kind Code |
A1 |
Lamansky; Sergey ; et
al. |
October 19, 2017 |
TRANSPARENT OLED LIGHT EXTRACTION
Abstract
The present disclosure provides novel light emitting devices
including AMOLED displays, based on transparent OLED architecture,
where a laminated nanostructured light extraction film can produce
axial and integrated optical gains as well as improved angular
luminance and color. Generally, the transparent AMOLED displays
with laminated sub-micron extractors include: (a) an extractor on a
transparent substrate for light outcoupling on both sides of the
transparent device; or (b) an extractor on a reflective film for
providing light outcoupling off the bottom side of the
bottom-emitting (BE) AMOLED; or (c) an extractor on a light
absorbing film for providing outcoupling off the bottom side of the
BE AMOLED combined with improved ambient contrast.
Inventors: |
Lamansky; Sergey; (Redmond,
WA) ; Arefe; Ghidewon; (Coon Rapids, MN) ;
Behrman; Keith L.; (Mishuku, JP) ; McMan; Steven
J.; (Stillwater, MN) ; Anim-addo; Jonathan A.;
(New Hope, MN) ; Tolbert; William A.; (Woodbury,
MN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
3M INNOVATIVE PROPERTIES COMPANY |
St. Paul |
MN |
US |
|
|
Assignee: |
3M Innovative Properties
Company
|
Family ID: |
49036647 |
Appl. No.: |
15/635008 |
Filed: |
June 27, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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15393968 |
Dec 29, 2016 |
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15635008 |
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14420747 |
Feb 10, 2015 |
9537116 |
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PCT/US2013/055043 |
Aug 15, 2013 |
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15393968 |
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61691945 |
Aug 22, 2012 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/5275 20130101;
H01L 51/5215 20130101; H01L 51/5271 20130101; H01L 2251/5323
20130101; H01L 51/5012 20130101; H01L 27/3244 20130101; G02B 5/1866
20130101; H01L 51/5237 20130101; H01L 51/5268 20130101; H01L
51/5234 20130101; H01L 2251/5369 20130101; H01L 51/524
20130101 |
International
Class: |
H01L 51/52 20060101
H01L051/52; H01L 51/52 20060101 H01L051/52; H01L 27/32 20060101
H01L027/32; H01L 51/52 20060101 H01L051/52; H01L 51/52 20060101
H01L051/52; H01L 51/52 20060101 H01L051/52 |
Claims
1. A light emitting device, comprising: an organic light emitting
diode (OLED) device having a top electrode and an opposing bottom
electrode disposed on a backplane, wherein each of the top
electrode, the opposing bottom electrode and the backplane are
substantially transparent to light emitted by the OLED device; a
capping layer disposed immediately adjacent the top electrode; and
a light extraction film disposed adjacent the capping layer,
wherein the light extraction film comprises a substrate comprising
a material substantially transparent to light emitted by the OLED
device, such that a portion of the light emitted by the OLED device
passes through the substrate and a portion of the light emitted by
the OLED device passes through the backplane, a layer of
nanostructures applied to the substrate, and a backfill layer
disposed over the nanostructures and adjacent the capping layer,
the backfill layer having an index of refraction greater than the
index of refraction of the nanostructures.
2. The light emitting device of claim 1, wherein the material
substantially reflective to light emitted by the OLED device
comprises a reflective metal, an inorganic dielectric stack, a
polymeric multilayer film, or a combination thereof.
3. The light emitting device of claim 1, wherein the backfill layer
comprises an adhesive for bonding the light extraction film to the
capping layer.
4. The light emitting device of claim 1, further comprising an
adhesive optical coupling layer disposed immediately adjacent the
capping layer.
5. The light emitting device of claim 1, wherein the layer of
nanostructures are applied to the substrate by embossing into a
major surface of the substrate.
6. The light emitting device of claim 1, wherein the layer of
nanostructures are applied to the substrate by patterning a
coating.
7. The light emitting device of claim 1, wherein the layer of
nanostructures comprise particulate nanostructures, non-particulate
nanostructures, or a combination thereof.
8. The light emitting device of claim 11, wherein the
non-particulate nanostructures comprise an engineered nanoscale
pattern.
9. The light emitting device of claim 1, wherein the backfill layer
comprises a non-scattering nanoparticle filled polymer.
10. The light emitting device of claim 1, wherein at least one of
the top electrode and the opposing bottom electrode comprises a
transparent conductive oxide.
11. The light emitting device of claim 14, wherein the transparent
conductive oxide comprises a thickness less than about 300 nm.
12. The light emitting device of claim 14, wherein the transparent
conductive oxide comprises a thickness less than about 100 nm.
13. The light emitting device of claim 14, wherein the transparent
conductive oxide comprises a thickness less than about 30 nm.
14. The light emitting device of claim 1, wherein the capping layer
comprises a material having a refractive index greater than about
1.7.
15. The light emitting device of claim 1, wherein the capping layer
comprises molybdenum oxide, indium tin oxide, zinc selenide, or a
combination thereof.
16. The light emitting device of claim 1, wherein the capping layer
comprises a thickness between about 60 nm and 400 nm.
17. The light emitting device of claim 1, wherein the light
extraction film comprises nanostructures having a variable
pitch.
18. The light emitting device of claim 1, wherein the light
extraction film comprises nanostructures having a pitch of about
400 nm, about 500 nm, about 600 nm, or a combination thereof.
19. An active matrix organic light emitting diode (AMOLED) device,
comprising: an array of light emitting devices, each light emitting
device comprising: an organic light emitting diode (OLED) device
having a top electrode and an opposing bottom electrode disposed on
a backplane, wherein each of the top electrode, the opposing bottom
electrode and the backplane are substantially transparent to light
emitted by the OLED device; a capping layer disposed immediately
adjacent the top electrode; and a light extraction film disposed
over the array of light emitting devices, the light extraction film
adjacent the capping layer, wherein the light extraction film
comprises a substrate comprising a material substantially
transparent to light emitted by the OLED device, such that a
portion of the light emitted by the OLED device passes through the
substrate and a portion of the light emitted by the OLED device
passes through the backplane, a layer of nanostructures applied to
the substrate, and a backfill layer disposed over the
nanostructures and adjacent the capping layer, the backfill layer
having an index of refraction greater than the index of refraction
of the nanostructures.
20. An image display device, comprising: a plurality of light
emitting devices, each light emitting device comprising: an organic
light emitting diode (OLED) device having a top electrode and an
opposing bottom electrode disposed on a backplane, wherein each of
the top electrode, the opposing bottom electrode and the backplane
are substantially transparent to light emitted by the OLED device;
a capping layer disposed immediately adjacent the top electrode; a
light extraction film disposed adjacent the capping layer; and an
electronic circuit capable of activating each of the light emitting
devices, wherein the light extraction film comprises a substrate
comprising a material substantially transparent to light emitted by
the OLED device, such that a portion of the light emitted by the
OLED device passes through the substrate and a portion of the light
emitted by the OLED device passes through the backplane, a layer of
nanostructures applied to the substrate, and a backfill layer
disposed over the nanostructures and adjacent the capping layer,
the backfill layer having an index of refraction greater than the
index of refraction of the nanostructures.
Description
RELATED APPLICATION
[0001] This application is related to the following U.S. patent
application, which is incorporated herein by reference:
"MICROCAVITY OLED LIGHT EXTRACTION" (Attorney Docket No.
70115US002), filed on an even date herewith.
BACKGROUND
[0002] Organic Light Emitting Diode (OLED) devices include a thin
film of electroluminescent organic material sandwiched between a
cathode and an anode, with one or both of these electrodes being a
transparent conductor. When a voltage is applied across the device,
electrons and holes are injected from their respective electrodes
and recombine in the electroluminescent organic material through
the intermediate formation of emissive excitons.
[0003] In OLED devices, over 70% of the generated light is
typically lost due to processes within the device structure. The
trapping of light at the interfaces between the higher index
organic and Indium Tin Oxide (ITO) layers and the lower index
substrate layers is one cause of this poor extraction efficiency.
Only a relatively small amount of the emitted light can emerge
through the transparent electrode as "useful" light. Much of the
light undergoes internal reflections, resulting in light being
emitted from the edge of the device or trapped within the device
and eventually being lost to absorption within the device after
making repeated passes. Light extraction films use internal
nanostructures that can reduce such waveguiding losses within the
device.
[0004] Active Matrix OLED (AMOLED) displays are gaining prominence
in the displays market. While mobile AMOLED displays are nearly all
represented by so-called top-emissive architecture where the OLED
is built on top of a reflective bottom electrode, the television
market will likely rely on the so-called bottom-emissive design
where the reflective electrode is deposited after the OLED organic
layers. A bottom-emissive architecture for an AMOLED TV is
attractive from the prospective of a better control of luminance
angularity, simpler manufacturing process and the ability to
achieve reasonably high aperture ratio with larger pixel sizes.
However, bottom-emissive design options for controlling such
important optical parameters such as light outcoupling (light
extraction) or ambient contrast are limited.
SUMMARY
[0005] The present disclosure provides novel light emitting devices
including AMOLED displays, based on transparent OLED architecture,
where a laminated nanostructured light extraction film can produce
axial and integrated optical gains as well as improved angular
luminance and color. Generally, the transparent AMOLED displays
with laminated sub-micron extractors include: (a) an extractor on a
transparent substrate for light outcoupling on both sides of the
transparent device; or (b) an extractor on a reflective film for
providing light outcoupling off the bottom side of the
bottom-emitting (BE) AMOLED; or (c) an extractor on a light
absorbing film for providing outcoupling off the bottom side of the
BE AMOLED combined with improved ambient contrast.
[0006] In one aspect, the present disclosure provides a light
emitting device that includes an organic light emitting diode
(OLED) device having a top electrode and an opposing bottom
electrode disposed on a backplane, wherein each of the top
electrode, the opposing bottom electrode and the backplane are
substantially transparent to light emitted by the OLED device; a
capping layer disposed immediately adjacent the top electrode; and
a light extraction film disposed adjacent the capping layer. The
light extraction film includes a substrate, a layer of
nanostructures applied to the substrate, and a backfill layer
disposed over the nanostructures and adjacent the capping layer,
the backfill layer having an index of refraction greater than the
index of refraction of the nanostructures. In one particular
embodiment, the substrate includes a material substantially
transparent to light emitted by the OLED device, such that light
emitted by the OLED device is capable of passing through the
backplane and through the substrate. In another particular
embodiment, the substrate includes a material substantially
reflective to light emitted by the OLED device, such that light
emitted by the OLED device is capable of passing through the
backplane. In yet another particular embodiment, the substrate
includes a material substantially absorptive to light emitted by
the OLED device such that light emitted by the OLED device is
capable of passing through the backplane.
[0007] In another aspect, the present disclosure provides an active
matrix organic light emitting diode (AMOLED) device that includes
an array of light emitting devices, each light emitting device
having an organic light emitting diode (OLED) device having a top
electrode and an opposing bottom electrode disposed on a backplane,
wherein each of the top electrode, the opposing bottom electrode
and the backplane are substantially transparent to light emitted by
the OLED device; and a capping layer disposed immediately adjacent
the top electrode. The AMOLED device further includes a light
extraction film disposed over the array of light emitting devices,
the light extraction film adjacent the capping layer. The light
extraction film includes a substrate, a layer of nanostructures
applied to the substrate, and a backfill layer disposed over the
nanostructures and adjacent the capping layer, the backfill layer
having an index of refraction greater than the index of refraction
of the nanostructures. In one particular embodiment, the substrate
includes a material substantially transparent to light emitted by
the OLED device, such that light emitted by the OLED device is
capable of passing through the backplane and through the substrate.
In another particular embodiment, the substrate includes a material
substantially reflective to light emitted by the OLED device, such
that light emitted by the OLED device is capable of passing through
the backplane. In yet another particular embodiment, the substrate
includes a material substantially absorptive to light emitted by
the OLED device such that light emitted by the OLED device is
capable of passing through the backplane.
[0008] In yet another aspect, the present disclosure provides an
image display device that includes a plurality of light emitting
devices, each light emitting device having an organic light
emitting diode (OLED) device having a top electrode and an opposing
bottom electrode disposed on a backplane, wherein each of the top
electrode, the opposing bottom electrode and the backplane are
substantially transparent to light emitted by the OLED device; and
a capping layer disposed immediately adjacent the top electrode.
The image display device further includes a light extraction film
disposed adjacent the capping layer; and an electronic circuit
capable of activating each of the light emitting devices. The light
extraction film includes a substrate, a layer of nanostructures
applied to the substrate, and a backfill layer disposed over the
nanostructures and adjacent the capping layer, the backfill layer
having an index of refraction greater than the index of refraction
of the nanostructures. In one particular embodiment, the substrate
includes a material substantially transparent to light emitted by
the OLED device, such that light emitted by the OLED device is
capable of passing through the backplane and through the substrate.
In another particular embodiment, the substrate includes a material
substantially reflective to light emitted by the OLED device, such
that light emitted by the OLED device is capable of passing through
the backplane. In yet another particular embodiment, the substrate
includes a material substantially absorptive to light emitted by
the OLED device such that light emitted by the OLED device is
capable of passing through the backplane.
[0009] The above summary is not intended to describe each disclosed
embodiment or every implementation of the present disclosure. The
figures and the detailed description below more particularly
exemplify illustrative embodiments.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] Throughout the specification reference is made to the
appended drawings, where like reference numerals designate like
elements, and wherein:
[0011] FIG. 1A shows a cross-sectional schematic of a light
emitting device including a transparent light extraction film;
[0012] FIG. 1B shows a cross-sectional schematic of a light
emitting device including a reflective light extraction film;
[0013] FIG. 1C shows a cross-sectional schematic of a light
emitting device including an absorptive light extraction film;
[0014] FIG. 2 shows efficiency vs brightness for control and
extractor-laminated devices; and
[0015] FIG. 3 shows efficiency vs brightness for control and
extractor-laminated devices.
[0016] The figures are not necessarily to scale. Like numbers used
in the figures refer to like components. However, it will be
understood that the use of a number to refer to a component in a
given figure is not intended to limit the component in another
figure labeled with the same number.
DETAILED DESCRIPTION
[0017] The present disclosure describes novel light emitting
devices including AMOLED displays, based on transparent OLED
architecture, where a laminated nanostructured light extraction
film can produce axial and integrated optical gains as well as
improved angular luminance and color. Generally, the transparent
AMOLED displays with laminated sub-micron extractors include: (a)
an extractor on a transparent substrate for light outcoupling on
both sides of the transparent device; or (b) an extractor on a
reflective film for providing light outcoupling off the bottom side
of the bottom-emissive (BE) AMOLED; or (c) an extractor on a light
absorbing film for providing outcoupling off the bottom side of the
BE AMOLED combined with improved ambient contrast.
[0018] Embodiments of the present disclosure relate to light
extraction films and uses of them for OLED devices. Examples of
light extraction films are described in U.S. Pat. Application
Publication Nos. 2009/0015757 and 2009/0015142, and also in
co-pending U.S. patent application Ser. No. 13/218,610 (Attorney
Docket No. 67921US002).
[0019] In the following description, reference is made to the
accompanying drawings that forms a part hereof and in which are
shown by way of illustration. It is to be understood that other
embodiments are contemplated and may be made without departing from
the scope or spirit of the present disclosure. The following
detailed description, therefore, is not to be taken in a limiting
sense.
[0020] Unless otherwise indicated, all numbers expressing feature
sizes, amounts, and physical properties used in the specification
and claims are to be understood as being modified in all instances
by the term "about." Accordingly, unless indicated to the contrary,
the numerical parameters set forth in the foregoing specification
and attached claims are approximations that can vary depending upon
the desired properties sought to be obtained by those skilled in
the art utilizing the teachings disclosed herein.
[0021] As used in this specification and the appended claims, the
singular forms "a," "an," and "the" encompass embodiments having
plural referents, unless the content clearly dictates otherwise. As
used in this specification and the appended claims, the term "or"
is generally employed in its sense including "and/or" unless the
content clearly dictates otherwise.
[0022] Spatially related terms, including but not limited to,
"lower," "upper," "beneath," "below," "above," and "on top," if
used herein, are utilized for ease of description to describe
spatial relationships of an element(s) to another. Such spatially
related terms encompass different orientations of the device in use
or operation in addition to the particular orientations depicted in
the figures and described herein. For example, if an object
depicted in the figures is turned over or flipped over, portions
previously described as below or beneath other elements would then
be above those other elements.
[0023] As used herein, when an element, component or layer for
example is described as forming a "coincident interface" with, or
being "on" "connected to," "coupled with" or "in contact with"
another element, component or layer, it can be directly on,
directly connected to, directly coupled with, in direct contact
with, or intervening elements, components or layers may be on,
connected, coupled or in contact with the particular element,
component or layer, for example. When an element, component or
layer for example is referred to as being "directly on," "directly
connected to," "directly coupled with," or "directly in contact
with" another element, there are no intervening elements,
components or layers for example.
[0024] OLED external efficiency is a parameter to be considered for
all OLED applications in the range between high-resolution displays
and lighting, since it affects such important device
characteristics as power consumption, luminance and lifetime. It
has been demonstrated that OLED external efficiency can be limited
by optical losses within the OLED stack itself (for example,
waveguiding mode within high-index organic layers and indium tin
oxide), within intermediate-refractive index substrates, and due to
exciton quenching at the electrode (cathode or anode) metal's
surface plasmon polaritons. In a device with a maximum possible
internal efficiency, about 75-80% of this efficiency can be
dissipated internally due to above-mentioned losses. Additionally,
in display applications, more than 50% of the light can be lost in
a circular polarizer used for improving, for example, Active Matrix
Organic Light Emitting Diode (AMOLED) ambient contrast. The primary
approach to addressing improvement of light extraction implemented
in current AMOLED displays involves a strong optical microcavity,
which enables some (usually about 1.5.times.) axial and total
gains, yet can induce significant luminance and color angular
problems.
[0025] The present disclosure describes techniques for improving
the optical design of light emitting devices including
bottom-emissive and transparent AMOLED displays, image display
devices, and can also apply to top-emissive (TE) AMOLED devices and
displays as well. In some cases, the techniques can also apply to
transparent or bottom-emissive OLED lighting.
[0026] In one particular embodiment, the present disclosure
provides a transparent AMOLED display with a light extraction film
optically coupled (for example, laminated) to only one (for
example, the top) surface of the OLED stack, and producing a
similar light extraction effect and improvements in luminance
angularity on both sides (that is, the bottom and the top) of the
device.
[0027] In one particular embodiment, the present disclosure
provides a bottom-emissive AMOLED display with improved light
extraction/wide angle performance obtained by fabrication of an
extraction film coated onto a mirror film substrate (for example, a
multilayer optical film such as Enhanced Specular Reflective (ESR)
film, or surface mirror including silver, gold, aluminum or metal
alloys), and optical coupling (for example, by lamination) of such
a film onto a top side of the transparent OLED stack.
[0028] In one particular embodiment, the present disclosure
provides a bottom-emissive AMOLED display with improved light
extraction/wide angle performance and improved ambient contrast
obtained by fabrication of an extraction film disposed on a light
absorbing substrate, such as a black/absorbing film substrate, and
optical coupling (for example, by lamination) of such a film onto a
top side of the transparent OLED stack.
[0029] OLED luminance enhancement by a factor of 1.5-2.2.times. has
been demonstrated with a nanostructured, that is sub-micron, OLED
light extractors, for example in U.S. Pat. Application Publication
Nos. 2009/0015757 and 2009/0015142. However, much of the work
reported in the open literature describe building OLED stacks on
top of a nanostructured extractor. The concept of building a bottom
emissive OLED display on such a film is attractive; however as yet
unobtainable. Bottom emissive (BE) OLED displays typically require
building a low-temperature poly-Si (LTPS) backplane on top of the
extractor structure. This poses an obstacle to using such
nanostructures in BE devices, because processes employed in
backplane manufacturing are both demanding and aggressive. For
example, the thermal and chemical stresses imposed on the substrate
during backplane manufacturing can impact the sensitive substrate
quality. In some cases, temperatures as high as 350-600.degree. C.
may be used to process Si for LTPS backplanes, which can render the
application of the extractor film prior to backplane manufacturing
extremely difficult, if not nearly impossible.
[0030] Significant optical gains and improvements in
luminance/color angular uniformity have also been demonstrated when
an extractor film is optically coupled to a top-emissive (TE)
microcavity OLED via a high refractive index optical coupling
layer, for example as shown in co-pending U.S. Provisional Patent
Application entitled MICROCAVITY OLED LIGHT EXTRACTION (Attorney
Docket No. 70115US002), filed on an even date herewith. The
laminated extraction film concept is appealing since application of
the extractor onto the microcavity OLED takes place after the most
aggressive and sensitive display fabrication steps are
complete.
[0031] FIG. 1A shows a cross-sectional schematic of a light
emitting device 100, according to one aspect of the disclosure. In
FIG. 1, an extractor is provided on a transparent substrate for
light outcoupling on both sides of a transparent device. Light
emitting device 100 includes a transparent light extraction film
110a disposed adjacent a capping layer 122. The capping layer 122
is disposed immediately adjacent a top electrode 124 of an OLED
device 120. In one particular embodiment, light emitting device 100
can be a novel portion of an AMOLED device, or part of an image
display device including drive electronics, as known to one of
skill in the art. Transparent light extraction film 110a can
include a substantially transparent substrate 112a (flexible or
rigid), a nanostructured layer 114 including nanostructures 115,
and a backfill layer 116 that can form a substantially planar
surface 117 over nanostructures 115. The backfill layer 116
includes a material that has an index of refraction that is greater
than the index of refraction of the nanostructured layer 114. The
term "substantially planar surface" means that the backfill layer
planarizes the underlying layer, although slight surface variations
may be present in the substantially planar surface. When the planar
surface of the backfill layer is placed against the light output
surface of the OLED device 120, the nanostructures at least
partially enhance light output from the OLED device 120. The planar
surface 117 can be placed directly against the OLED light output
surface or through another layer between the planar surface and
light output surface.
[0032] OLED device 120 includes an OLED having a bottom electrode
128, electroluminescent organic material 126, and a top electrode
124, and can further be disposed on a substantially transparent
backplane 130. Top electrode 124 and bottom electrode 128 can be a
transparent cathode and a transparent anode, respectively, as known
to one of ordinary skill in the art. Light generated in the
electroluminescent organic material 126 can escape the OLED device
120 from both the top and bottom electrode 124, 128. In some cases,
the top electrode can be a transparent electrode comprising a metal
oxide such as a transparent conductive oxide having a thickness
less than about 500 nm, or less than about 300 nm, or less than
about 100 nm, or less than about 50 nm or even less than about 30
nm. OLED device 120 further includes a capping layer 122 disposed
immediately adjacent the top electrode 124.
[0033] When the capping layer 122 has a sufficiently high index of
refraction, generally at least greater than the electroluminescent
organic material 126, the efficiency of light extracted from the
OLED device 120 can be improved.
[0034] In some cases, the capping layer can have an index of
refraction greater than about 1.8, or greater than about 1.9, or
greater than about 2.0 or more. As used herein, refractive index
refers to the index of refraction for light having a wavelength of
550 nm, unless otherwise indicated. In one particular embodiment,
the capping layer comprises molybdenum oxide (MoO3), zinc selenide
(ZnSe), silicon nitride (SiNx), indium tin oxide (ITO), or a
combination thereof. In one particular embodiment, a capping layer
comprising zinc selenide can be preferred. In some cases, the
capping layer comprises a thickness between about 60 nm and 400 nm.
The capping layer thickness may be optimized, if desired, to
provide for the most efficient coupling of the waveguided loss
modes inside the OLED stack, to the extractor. While the capping
layer has the above-mentioned optical function, it also in some
cases can provide an additional protection of the OLED organic
materials from the extraction film components, for example, from
the optical coupling layer/adhesive used to apply the extraction
film onto an OLED device. Thus, it may be desirable that the
capping layer exhibits some level of barrier properties towards the
components of the OLED light extraction film.
[0035] The transparent light extraction film 110a is typically made
as a separate film to be applied to an OLED device 120. For
example, an optical coupling layer 118 can be used to optically
couple the transparent light extraction film 110a to a light output
surface of an OLED device 120. Optical coupling layer 118 can be
applied to the transparent light extraction film 110a, the OLED
device 120, or both, and it can be implemented with an adhesive to
facilitate application of the transparent light extraction film
110a to the OLED device 120. As an alternative to a separate
optical coupling layer 118, the backfill layer 116 may be comprised
of a high index adhesive, so that the optical and planarizing
functions of the backfill layer 116, and the adhering function of
the optical coupling layer 118, are performed by the same layer.
Examples of optical coupling layers and processes for using them to
laminate light extraction films to OLED devices are described, for
example, in U.S. patent application Ser. No. 13/050,324, entitled
"OLED Light Extraction Films Having Nanoparticles and Periodic
Structures," and filed Mar. 17, 2011.
[0036] The nanostructures 115 for transparent light extraction film
110a can be particulate nanostructures, non-particulate
nanostructures, or a combination thereof. In some cases, the
non-particulate nanostructures can comprise an engineered
nanostructure having an engineered nanoscale pattern. The
nanostructures 115 can be formed integrally with the substrate or
in a layer applied to the substrate. For example, the
nanostructures can be formed on the substrate by applying to the
substrate a low-index material and subsequently patterning the
material. In some cases, the nanostructures can be embossed into a
surface of the substantially transparent substrate 112. Engineered
nanostructures are structures having at least one dimension, such
as width, less than 1 micron. Engineered nanostructures are not
individual particles but may be composed of nanoparticles forming
the engineered nanostructures where the nanoparticles are
significantly smaller than the overall size of the engineered
structures.
[0037] The engineered nanostructures for transparent light
extraction film 110a can be one-dimensional (1D), meaning they are
periodic in only one dimension, that is, nearest-neighbor features
are spaced equally in one direction along the surface, but not
along the orthogonal direction. In the case of 1D periodic
nanostructures, the spacing between adjacent periodic features is
less than 1 micron. One-dimensional structures include, for
example, continuous or elongated prisms or ridges, or linear
gratings. In some cases, the nanostructured layer 114 can comprise
nanostructures 115 having a variable pitch. In one particular
embodiment, the nanostructured layer 114 can comprise
nanostructures having a pitch of about 400 nm, about 500 nm, about
600 nm, or a combination thereof.
[0038] The engineered nanostructures for transparent light
extraction film 110a can also be two-dimensional (2D), meaning they
are periodic in two dimensions, that is, nearest neighbor features
are spaced equally in two different directions along the surface.
Examples of engineered nanostructures can be found, for example, in
U.S. patent application Ser. No. 13/218,610 (Attorney Docket No.
67921US002), filed on Aug. 26, 2011. In the case of 2D
nanostructures, the spacing in both directions is less than 1
micron. Note that the spacing in the two different directions may
be different. Two-dimensional structures include, for example,
lenslets, pyramids, trapezoids, round or square shaped posts, or
photonic crystal structures. Other examples of two-dimensional
structures include curved sided cone structures as described in
U.S. Pat. Application Publication No. 2010/0128351.
[0039] Materials for the substrates, nanostructures, and backfill
layers for transparent light extraction film 110a are provided in
the published patent applications identified above. For example,
the substrate can be implemented with glass, PET, polyimides, TAC,
PC, polyurethane, PVC, or flexible glass. Processes for making
transparent light extraction film 110a are also provided in the
published patent applications identified above. Optionally, the
substrate can be implemented with a barrier film to protect a
device incorporating the light extraction film from moisture or
oxygen. Examples of barrier films are disclosed in U.S. Pat.
Application Publication No. 2007/0020451 and U.S. Pat. No.
7,468,211.
[0040] When a voltage is applied across the top electrode 124 and
the bottom electrode 128 of the light emitting device 100,
electrons and holes are injected from their respective electrodes
and recombine in the electroluminescent organic material 126
through the intermediate formation of emissive excitons 140. The
emissive excitons 140 generate a top emitted light ray 142 that
exits the light emitting device 100 by passing through the
substantially transparent substrate 112a, and a bottom emitted
light ray 144a that exits the light emitting device 100 by passing
through the substantially transparent backplane 130. The top
emitted light ray 142 is included within a top light beam 143 that
includes light within a top half-angle .theta.1, and the bottom
emitted light ray 144a is included within a bottom light beam 145a
that includes light within a bottom half-angle .theta.2a. The
presence of the transparent light extraction film 110a may enhance
or otherwise modify the angularity of the light emitting device
(that is, the magnitude of the top half-angle .theta.1 spread of
the top light beam 143, and the bottom half angle .theta.2a spread
of the bottom light beam 145a), and also the brightness (that is,
the magnitude of the top light beam 143 and the bottom light beam
145a). In some cases, the top half-angle .theta.1 can be equivalent
to the bottom half angle .theta.2a, and/or the magnitude of the top
light beam 143 can be equivalent to the magnitude of the bottom
light beam 145a, although this is not necessarily so.
[0041] FIG. 1B shows a cross-sectional schematic of a light
emitting device 101, according to one aspect of the disclosure. In
FIG. 1B, an extractor on a surface reflector provides light
outcoupling from the bottom side of the device; the reflector
causes light to be emitted only from the bottom of the device, as
described elsewhere. Each of the elements 114-130 shown in FIG. 1B
correspond to like-numbered elements shown in FIG. 1A, which have
been described previously. For example, substantially transparent
backplane 130 in FIG. 1B corresponds to substantially transparent
backplane 130 in FIG. 1A, and so on.
[0042] Most typical OLED architectures, both top and
bottom-emissive, include a reflective electrode responsible not
only for charge injection but also for reflection or re-direction
of the light that is emitted by the OLED towards such reflective
electrode. This usually leads to improved efficiency through the
second, transparent, electrode. The light emitting device 101 shown
in FIG. 1B provides such light reflection or re-direction by
providing a reflective film on top of the device. Such a device
with a film reflector is expected, and has been demonstrated, to be
as efficient as conventional OLEDs with metallic reflective
electrodes. Moreover, since the device shown in FIG. 1B includes a
light extraction nanostructure, such a device may have improved
efficiency compared to conventional OLEDs.
[0043] Light emitting device 101 includes a reflective light
extraction film 110b, in contrast to the light emitting device 100
shown in FIG. 1A, which includes a transparent light extraction
film 110a. Reflective light extraction film 110b includes a
reflective substrate 112b, whereas transparent light extraction
film 110a includes a substantially transparent substrate 112a. All
other components of light emitting device 101 shown in FIG. 1B are
identical to like components of light emitting device 100 shown in
FIG. 1A.
[0044] Reflective substrate 112b can comprise any suitably light
reflective material including, for example: bulk and surface
deposited metals and metal alloys such as silver, aluminum, and the
like; multilayer dielectric reflectors including both inorganic and
organic multilayer films such as metal oxide stacks, and organic
multilayer films such as multilayer optical films like Vikuiti.TM.
ESR film available from 3M Company; and combinations thereof. In
some cases, nanostructures 115 can be directly embossed into a
surface of the reflective substrate 112b.
[0045] When a voltage is applied across the top electrode 124 and
the bottom electrode 128 of the light emitting device 101,
electrons and holes are injected from their respective electrodes
and recombine in the electroluminescent organic material 126
through the intermediate formation of emissive excitons 140. The
emissive excitons 140 generate a top emitted light ray 142 that is
directed toward the top electrode 124, and a bottom emitted light
ray 144b that is directed toward the bottom electrode 128 and
through the transparent backplane 130. The top emitted light ray
142 reflects from reflective substrate 112b as a reflected top
emitted light ray 146 that is also directed through the transparent
backplane 130.
[0046] The reflected top emitted light ray 146 is included within a
reflected top light beam 147 that includes light within a reflected
top half-angle .theta.3, and the bottom emitted light ray 144b is
included within a bottom light beam 145b that includes light within
a bottom half-angle .theta.2b. The presence of the reflective light
extraction film 110b may enhance or otherwise modify the angularity
of the light emitting device (that is, the magnitude of the
reflected top half-angle .theta.3 spread of the reflected top light
beam 147, and the bottom half angle .theta.2b spread of the bottom
light beam 145b), and also the brightness (that is, the magnitude
of the reflected top light beam 147 and the bottom light beam
145b). In some cases, the reflected top half-angle .theta.3 can be
equivalent to the bottom half angle .theta.2b, and/or the magnitude
of the reflected top light beam 147 can be equivalent to the
magnitude of the bottom light beam 145b, although this is not
necessarily so.
[0047] FIG. 1C shows a cross-sectional schematic of a light
emitting device 102, according to one aspect of the disclosure. In
FIG. 1C, an extractor on an absorptive film provides outcoupling
from the bottom side of the device, combined with improved ambient
contrast; the absorber causes light to be emitted only from the
bottom of the device, as described elsewhere. Each of the elements
114-130 shown in FIG. 1C correspond to like-numbered elements shown
in FIGS. 1A and 1B, which have been described previously. For
example, substantially transparent backplane 130 in FIG. 1C
corresponds to substantially transparent backplane 130 in FIGS. 1A
and 1B, and so on.
[0048] The use of either black or light absorbing electrodes in
OLED displays in order to improve ambient contrast of the device
have been described elsewhere. However, such devices typically
suffer from significant additional light losses due to absorption
of the OLED emitted light by such electrode. The light emitting
device 102 shown in FIG. 1C can produce improved light efficiency
in comparison to devices with absorbing electrodes, in part because
a light extraction nanostructure is incorporated into the optical
stack comprising the transparent OLED device and light extraction
film on an absorbing substrate. An extractor laminated on either
facet of the OLED device leads to improved light outcoupling
through the opposite electrode as well.
[0049] Light emitting device 102 includes an absorptive light
extraction film 110c, in contrast to the light emitting device 100
shown in FIG. 1A, which includes a transparent light extraction
film 110a, or the light emitting device 101 shown in FIG. 1B, which
includes a reflective light extraction film 110b. Absorptive light
extraction film 110c includes a light absorbing substrate 112c,
whereas transparent light extraction film 110a includes a
substantially transparent substrate 112a, and reflective light
extraction film 110b includes a reflective substrate 112b. All
other components of light emitting device 102 shown in FIG. 1C are
identical to like components of light emitting device 100 and 101
shown in FIGS. 1A and 1B, respectively.
[0050] Light absorbing substrate 112c can comprise any suitably
light absorbing material, in particular visible light absorbing
materials including, for example: pigments and/or dyes both coated
on a substrate and dispersed throughout the substrate;
microstructured and/or microtextured light absorptive surface
coatings; and combinations thereof. In some cases, nanostructures
115 can be directly embossed into a surface of the light absorbing
substrate 112c.
[0051] When a voltage is applied across the top electrode 124 and
the bottom electrode 128 of the light emitting device 102,
electrons and holes are injected from their respective electrodes
and recombine in the electroluminescent organic material 126
through the intermediate formation of emissive excitons 140. The
emissive excitons 140 generate a top emitted light ray 142 that is
directed toward the top electrode 124, and a bottom emitted light
ray 144c that is directed toward the bottom electrode 128 and
through the transparent backplane 130. The top emitted light ray
142 is absorbed by the light absorbing substrate 112c.
[0052] The bottom emitted light ray 144c is included within a
bottom light beam 145c that includes light within a bottom
half-angle .theta.2c. The presence of the absorptive light
extraction film 110c may enhance or otherwise modify the angularity
of the light emitting device (that is, the magnitude of the bottom
half angle .theta.2c spread of the bottom light beam 145c), and
also the brightness (that is, the magnitude of the bottom light
beam 145b). The presence of the absorptive light extraction film
110c further enhances the contrast of the light emitting device 102
by absorbing any ambient light 150 that enters through the
substantially transparent backplane 130.
EXAMPLES
[0053] All parts, percentages, ratios, etc. in the examples are by
weight, unless noted otherwise. Solvents and other reagents used
were obtained from Sigma-Aldrich Chemical Company; Milwaukee, Wis.
unless specified differently.
Materials
TABLE-US-00001 [0054] Abbreviation/ product name Description
Available from 3-mercaptopropyl Chain Transfer Agent, 95% Alfa
Aesar, Ward Hill, trimethoxysilane MA IRGACURE 184 Photoinitiator
Ciba Specialty Chemicals, Tarrytown, NY MoO.sub.3 PURATRONIC
MoO.sub.3, Alfa Aesar, Ward Hill, 99.9995% metals basis MA Nagase
UV curable epoxy resin Nagase chemteX Corp., XNR5516Z-B1 Japan
PHOTOMER aliphatic urethane diacrylate Cognis Corporation, 6210
Cincinnati, OH SOLPLUS D510 polyester-polyamine Lubrizol,
Cleveland, OH copolymer SR238 1,6 hexanediol diacrylate Sartomer
Company, Exton, PA SR833S difunctional acrylate Sartomer Company,
monomer Exton, PA
Preparative Examples
Preparation of D510 Stabilized 50 nm TiO.sub.2 Nanoparticle
Dispersions
[0055] A TiO.sub.2 nanoparticle dispersion with an approximately
52% wt of TiO.sub.2 was prepared using a milling process in the
presence of SOLPLUS D510 and 1-methoxy-2-propanol. The SOLPLUS D510
was added in an amount of 25% wt based on TiO.sub.2 weight. The
mixture was premixed using a DISPERMAT mixer (Paul N. Gardner
Company, Inc., Pompano Beach, Fla.) for 10 minutes and then a
NETZSCH MiniCer Mill (NETZSCH Premier Technologies, LLC., Exton,
Pa.) was used with the following conditions: 4300 rpm, 0.2 mm YTZ
milling media, and 250 ml/min flow rate. After 1 hour of milling, a
white paste-like TiO.sub.2 dispersion in 1-methoxy-2-propanol was
obtained. The particle size was determined to be 50 nm (Z-average
size) using a Malvern Instruments ZETASIZER Nano ZS (Malvern
Instruments Inc, Westborough, Mass.).
Preparation of High Index Backfill Solution (HI-BF):
[0056] 20 g of D510 stabilized 50 nm TiO.sub.2 solution, 2.6 g of
SR833S, 0.06 g of IRGACURE 184, 25.6 g of 1-methoxy-2-propanol,
38.4 g of 2-butanone were mixed together to form a homogenous high
index backfill solution.
Fabrication of Nanostructured Film with 400 nm Pitch
[0057] A 400 nm "sawtooth" grating film was fabricated by first
making a multi-tipped diamond tool as described in U.S. Pat. No.
7,140,812 (using a synthetic single crystal diamond, Sumitomo
Diamond, Japan).
[0058] The diamond tool was then used to make a copper
micro-replication roll which was then used to make 400 nm 1D
structures on a PET film in a continuous cast and cure process
utilizing a polymerizable resin made by mixing 0.5% (2,4,6
trimethyl benzoyl) diphenyl phosphine oxide into a 75:25 blend of
PHOTOMER 6210 and SR238.
[0059] HI-BF solution was coated onto the 400 nm pitch 1D
structured film using a roll to roll coating process with a web
speed of 4.5 m/min (15 ft/min) and a dispersion delivery rate of
5.1 cc/min. The coating was dried in air at room temperature, then
subsequently further dried at 82.degree. C. (180.degree. F.) and
then cured using a Fusion UV-Systems Inc. Light-Hammer 6 UV
(Gaithersburg, Md.) processor equipped with an H-bulb, operating
under nitrogen atmosphere at 75% lamp power at a line speed of 4.5
m/min (15 ft/min).
Example 1
[0060] Top Emissive (TE) OLED test coupons were built using
standard thermal deposition in a vacuum system at base pressure of
about 10.sup.-6 Torr. A substrate was fabricated on polished float
glass with a 0.5 .mu.m thick photoresist coating and with 80 nm ITO
coatings patterned to produce four 5.times.5 mm pixels in a square
arrangement. A pixel defining layer (PDL) was applied to reduce the
square size to 4.times.4 mm and provide clearly defined pixel
edges. The following structure was built: [0061] Substrate/80 nm
ITO bottom electrode (cathode)/20 nm EIL/25 nm ETL/30 nm EML/10 nm
HTL2/165 nm HTL1/100 nm HIL/80 nm ITO top electrode (anode)/200 nm
MoO3 capping layer (CPL) where HIL, HTL, EML and ETL stand,
respectively, for hole-injection, hole-transport, emissive and
electron-transport layers. The top electrode was 80 nm ITO
patterned via shadow masks to align with the substrate layer. A
pixel defining layer (PDL) was applied to reduce the square size to
4.times.4 mm and provide clearly defined pixel edges. The capping
layer (CPL) was 200 nm thick MoO.sub.3. Typical values of
refractive index cited in published literature for MoO.sub.3 range
from 1.7-1.9. The MoO.sub.3 was deposited on a substrate kept at
room temperature, which results in a refractive index of
approximately 1.71 measured at a wavelength at 600 nm, as reported
in "Optical characterization of MoO.sub.3 thin films produced by
continuous wave CO.sub.2 laser-assisted evaporation", Cardenas et
al., Thin Solid Films, Vol. 478, Issues 1-2, Pages 146-151, May
2005.
[0062] Following device fabrication and prior to encapsulation, 400
nm pitch 1D-symmetric extractor backfilled with a high refractive
index described under "Fabrication of nanostructured film with 400
nm pitch" was applied onto two pixels out of four on each test
coupon, using an optical coupling layer prepared as described in
Example 7 of U.S. Provisional application Ser. No. 61/604,169,
except that in the synthesis of Polymer-II, 2.0 g of
3-mercaptopropyl trimethoxysilane was used instead of 3.7 g. The
optical coupling layer had a refractive index of about 1.7. The
extractor lamination was conducted under inert (N.sub.2) atmosphere
and was followed by protecting under a glass lid attached by
applying Nagase XNR5516Z-B1 UV-curable epoxy around the perimeter
of the lid and cured with a UV-A light source at 16 Joules/cm.sup.2
for 400 seconds.
[0063] Electrical and optical performance of the fabricated devices
were evaluated using a set of standard OLED measurement techniques,
including luminance-current-voltage (LIV) measurements using a
PR650 camera (Photo Research, Inc., Chatsworth, Calif.) and
Keithley 2400 Sourcemeter (Keithley Instrumemts, Inc., Cleveland,
Ohio), angular luminance and electroluminescence spectra
measurements using an AUTRONIC Conoscope (AUTRONIC-MELCHERS GmbH,
Karlsruhe, Germany), and goniometric measurements using the PR650
camera. The pixels without nanostructures were tested as controls.
Optical properties of the transparent devices were evaluated on
both the top side (lamination side) and the bottom side of the
devices.
[0064] FIG. 2 shows typical axial efficiency--luminance plots for
both top- and bottom-emission sides of the transparent control and
laminated devices. In FIG. 2, the performance of the top surface
emission control is labeled "A", and top surface emission laminated
with the extractor is labeled "B"; bottom surface emission control
is labeled "C", and bottom surface emission laminated with the
extractor is labeled "D". An axial optical gain of about 1.3.times.
was observed on both the lamination (top) side and the bottom side
of the devices. Conoscopic images of the devices showed axial gains
of about 1.3.times. on each side of the devices, in agreement with
the axial LIV tests, and showed integrated gains of up to
1.4.times. on each side. Very similar luminance far-field patterns
were observed for the top and bottom of the devices indicating that
the laminated extractor became a part of the same optical stack
influencing light extracted in both directions.
Example 2
[0065] Transparent OLED devices were built and evaluated according
to the procedure described in Example 1 except that immediately
prior to glass encapsulation, a 200 nm thick Ag film was
vacuum-deposited onto all four pixels (both control pixels and
pixels with laminated nanostructured extractor film) to redirect
light solely towards the bottom-emission (BE) side.
[0066] FIG. 3 shows axial efficiency--luminance plots for the BE
devices where it can be seen that significant axial gains (near
2.times.) were obtained in the devices having the nanostructured
extractor. In FIG. 3, the performance of the control with only the
Ag coating is labeled "A", and the laminated sample with the Ag
coating and laminated extractor is labeled "B". Conoscopic
luminance far-field images of the control devices showed a fairly
typical, broad luminance distribution while the luminance pattern
changed to a characteristic forward-directed band for devices
incorporating the nanostructured extractor. Approximately 2.times.
axial and integrated optical gains were observed.
Example 3--Preparation of a Reflective Extraction Film
[0067] A PET film with 400 nm structures was prepared as described
in "Fabrication of nanostructured film with 400 nm pitch" except
that no backfill was applied. The film was plasma treated using a
commercial batch plasma system (Plasma-Therm Model 3032 available
from Plasma-Therm, St. Petersburg, Fla.) configured for reactive
ion etching (RIE) with a 0.66 m (26 inch) lower powered electrode
and central gas pumping. The chamber was pumped by a roots blower
(Edwards Model EH1200 available from Edwards US, Sanborn, N.Y.)
backed by a dry mechanical pump (Edwards Model iQDP80 available
from Edwards US, Sanborn, N.Y.). RF power was delivered by a 3 kW,
13.56 MHz solid-state generator (RFPP Model RF30S available from RF
Power Products, Inc., Voorhees, N.J.) through an impedance matching
network. The system had a nominal base pressure of 5 mTorr. The
flow rates of the gases were controlled by MKS flow controllers
(MKS Instruments, Andover, Mass.). Samples were placed on the
lowered powered electrode of the batch plasma apparatus. A surface
preparation step was performed by flowing O.sub.2 at a flow rate of
500 standard cm.sup.3/min, plasma power of 200 watts for 30
seconds. The plasma treatment was done by flowing tetramethylsilane
gas at a flow rate of 150 standard cm.sup.3/min, plasma power of
200 watts for 120 seconds. The pressure during the deposition was
approximately 20 mTorr. A post etch step was performed by flowing
O.sub.2 at a flow rate of 500 standard cm.sup.3/min, plasma power
of 300 watts for 20 seconds. After the plasma treatment was
completed, the chamber was vented to atmosphere and the samples
were removed.
[0068] A sheet of ESR (Enhanced Specular Reflector, 3M Company, St.
Paul, Minn.) was primed with a solvent-borne polyester resin
solution and dried in an oven at 80.degree. C. for 3 minutes. The
thickness of the prime layer was about 0.3 microns after drying.
The primed sheet of ESR was laid on a metal plate on a hot plate
set at 71.degree. C. (160.degree. F.) with the primed side facing
upwards. The plasma treated nanostructured PET film was laid over
the ESR with structured side facing downwards. A piece of tape was
used to attach both films to each other near their top edges. The
PET film was lifted from the bottom edge and a thin bead of a UV
curable multifunctional urethane acrylate resin was applied between
the films near their top edges. The PET film was then set back on
the ESR so the resin bead was in contact with both films. The metal
plate and films were then passed through a heated laminator nip to
spread the resin thinly and evenly between the PET film and the
ESR. The laminator used was a GBC Catena 35 (GBC Document
Finishing, Lincolnshire, Ill.), the nip rolls were set to
110.degree. C. (230.degree. F.), speed setting of "5" was used and
the nip was closed to its tightest position (labeled "Heavy
Gauge").
[0069] The resin was then cured by passing the metal plate and
films on a belt-style curing station under a 79 W/cm (600 W/in)
Fusion D-bulb at 100% power. Two passes were made at 12 m/min (40
ft/min) with the PET film above the ESR film. The tool was then
peeled from the replicated ESR to expose the structure. The
resulting nanostructure replicas on the ESR film were evaluated by
SEM using a Hitachi S-4500 SEM instrument (Hitachi, Ltd., Japan).
SEM images indicated a high fidelity of replication of the periodic
nanostructures onto the ESR film, though the release was not
optimal in this Example and some resin remained in the tool
film.
[0070] Following are a list of embodiments of the present
disclosure.
[0071] Item 1 is a light emitting device, comprising: an organic
light emitting diode (OLED) device having a top electrode and an
opposing bottom electrode disposed on a backplane, wherein each of
the top electrode, the opposing bottom electrode and the backplane
are substantially transparent to light emitted by the OLED device;
a capping layer disposed immediately adjacent the top electrode;
and a light extraction film disposed adjacent the capping layer,
wherein the light extraction film comprises a substrate, a layer of
nanostructures applied to the substrate, and a backfill layer
disposed over the nanostructures and adjacent the capping layer,
the backfill layer having an index of refraction greater than the
index of refraction of the nanostructures.
[0072] Item 2 is the light emitting device of item 1, wherein the
substrate comprises a material substantially transparent to light
emitted by the OLED device, such that light emitted by the OLED
device is capable of passing through the backplane and through the
substrate.
[0073] Item 3 is the light emitting device of item 1 or item 2,
wherein the substrate comprises a material substantially reflective
to light emitted by the OLED device, such that light emitted by the
OLED device is capable of passing through the backplane.
[0074] Item 4 is the light emitting device of item 3, wherein the
material substantially reflective to light emitted by the OLED
device comprises a reflective metal, an inorganic dielectric stack,
a polymeric multilayer film, or a combination thereof.
[0075] Item 5 is the light emitting device of item 1 to item 4,
wherein the substrate comprises a material substantially absorptive
to light emitted by the OLED device such that light emitted by the
OLED device is capable of passing through the backplane.
[0076] Item 6 is the light emitting device of item 5, wherein the
material is also substantially absorptive to ambient visible light
passing through the OLED device.
[0077] Item 7 is the light emitting device of item 1 to item 6,
wherein the backfill layer comprises an adhesive for bonding the
light extraction film to the capping layer.
[0078] Item 8 is the light emitting device of item 1 to item 7,
further comprising an adhesive optical coupling layer disposed
immediately adjacent the capping layer.
[0079] Item 9 is the light emitting device of item 1 to item 8,
wherein the layer of nanostructures are applied to the substrate by
embossing into a major surface of the substrate.
[0080] Item 10 is the light emitting device of item 1 to item 9,
wherein the layer of nanostructures are applied to the substrate by
patterning a coating.
[0081] Item 11 is the light emitting device of item 1 to item 10,
wherein the layer of nanostructures comprise particulate
nanostructures, non-particulate nanostructures, or a combination
thereof.
[0082] Item 12 is the light emitting device of item 11, wherein the
non-particulate nanostructures comprise an engineered nanoscale
pattern.
[0083] Item 13 is the light emitting device of item 1 to item 12,
wherein the backfill layer comprises a non-scattering nanoparticle
filled polymer.
[0084] Item 14 is the light emitting device of item 1 to item 13,
wherein at least one of the top electrode and the opposing bottom
electrode comprises a transparent conductive oxide.
[0085] Item 15 is the light emitting device of item 14, wherein the
transparent conductive oxide comprises a thickness less than about
300 nm.
[0086] Item 16 is the light emitting device of item 14, wherein the
transparent conductive oxide comprises a thickness less than about
100 nm.
[0087] Item 17 is the light emitting device of item 14, wherein the
transparent conductive oxide comprises a thickness less than about
30 nm.
[0088] Item 18 is the light emitting device of item 1 to item 17,
wherein the capping layer comprises a material having a refractive
index greater than about 1.7.
[0089] Item 19 is the light emitting device of item 1 to item 18,
wherein the capping layer comprises molybdenum oxide, indium tin
oxide, zinc selenide, or a combination thereof.
[0090] Item 20 is the light emitting device of item 1 to item 19,
wherein the capping layer comprises a thickness between about 60 nm
and 400 nm.
[0091] Item 21 is the light emitting device of item 1 to item 20,
wherein the light extraction film comprises nanostructures having a
variable pitch.
[0092] Item 22 is the light emitting device of item 1 to item 21,
wherein the light extraction film comprises nanostructures having a
pitch of about 400 nm, about 500 nm, about 600 nm, or a combination
thereof.
[0093] Item 23 is an active matrix organic light emitting diode
(AMOLED) device, comprising: an array of light emitting devices,
each light emitting device comprising: an organic light emitting
diode (OLED) device having a top electrode and an opposing bottom
electrode disposed on a backplane, wherein each of the top
electrode, the opposing bottom electrode and the backplane are
substantially transparent to light emitted by the OLED device; a
capping layer disposed immediately adjacent the top electrode; and
a light extraction film disposed over the array of light emitting
devices, the light extraction film adjacent the capping layer,
wherein the light extraction film comprises a substrate, a layer of
nanostructures applied to the substrate, and a backfill layer
disposed over the nanostructures and adjacent the capping layer,
the backfill layer having an index of refraction greater than the
index of refraction of the nanostructures.
[0094] Item 24 is the AMOLED device of item 23, wherein the
substrate comprises a material substantially transparent to light
emitted by the OLED device, such that light emitted by the OLED
device is capable of passing through the backplane and through the
substrate.
[0095] Item 25 is the AMOLED device of item 23 or item 24, wherein
the substrate comprises a material substantially reflective to
light emitted by the OLED device, such that light emitted by the
OLED device is capable of passing through the backplane.
[0096] Item 26 is the AMOLED device of item 25, wherein the
material substantially reflective to light emitted by the OLED
device comprises a reflective metal, an inorganic dielectric stack,
a polymeric multilayer film, or a combination thereof.
[0097] Item 27 is the AMOLED device of item 23 to item 26, wherein
the substrate comprises a material substantially absorptive to
light emitted by the OLED device such that light emitted by the
OLED device is capable of passing through the backplane.
[0098] Item 28 is the AMOLED device of item 27, wherein the
material is also substantially absorptive to ambient visible light
passing through the OLED device.
[0099] Item 29 is the AMOLED device of item 23 to item 26, wherein
the backfill layer comprises an adhesive for bonding the light
extraction film to the capping layer.
[0100] Item 30 is the AMOLED device of item 23 to item 26, further
comprising an adhesive optical coupling layer disposed immediately
adjacent the capping layer.
[0101] Item 31 is an image display device, comprising: a plurality
of light emitting devices, each light emitting device comprising:
an organic light emitting diode (OLED) device having a top
electrode and an opposing bottom electrode disposed on a backplane,
wherein each of the top electrode, the opposing bottom electrode
and the backplane are substantially transparent to light emitted by
the OLED device; a capping layer disposed immediately adjacent the
top electrode; a light extraction film disposed adjacent the
capping layer; and an electronic circuit capable of activating each
of the light emitting devices, wherein the light extraction film
comprises a substrate, a layer of nanostructures applied to the
substrate, and a backfill layer disposed over the nanostructures
and adjacent the capping layer, the backfill layer having an index
of refraction greater than the index of refraction of the
nanostructures.
[0102] Item 32 is the light emitting device of item 31, wherein the
substrate comprises a material substantially transparent to light
emitted by the OLED device, such that light emitted by the OLED
device is capable of passing through the backplane and through the
substrate.
[0103] Item 33 is the light emitting device of item 31 or item 32,
wherein the substrate comprises a material substantially reflective
to light emitted by the OLED device, such that light emitted by the
OLED device is capable of passing through the backplane.
[0104] Item 34 is the light emitting device of item 33, wherein the
material substantially reflective to light emitted by the OLED
device comprises a reflective metal, an inorganic dielectric stack,
a polymeric multilayer film, or a combination thereof.
[0105] Item 35 is the light emitting device of item 31 to item 34,
wherein the substrate comprises a material substantially absorptive
to light emitted by the OLED device such that light emitted by the
OLED device is capable of passing through the backplane.
[0106] Item 36 is the light emitting device of item 35, wherein the
material is also substantially absorptive to ambient visible light
passing through the OLED device.
[0107] Item 37 is the image display device of item 31 to item 36,
wherein the plurality of light emitting devices comprise an active
matrix organic light emitting diode (AMOLED) device.
[0108] Unless otherwise indicated, all numbers expressing feature
sizes, amounts, and physical properties used in the specification
and claims are to be understood as being modified by the term
"about". Accordingly, unless indicated to the contrary, the
numerical parameters set forth in the foregoing specification and
attached claims are approximations that can vary depending upon the
desired properties sought to be obtained by those skilled in the
art utilizing the teachings disclosed herein.
[0109] All references and publications cited herein are expressly
incorporated herein by reference in their entirety into this
disclosure, except to the extent they may directly contradict this
disclosure. Although specific embodiments have been illustrated and
described herein, it will be appreciated by those of ordinary skill
in the art that a variety of alternate and/or equivalent
implementations can be substituted for the specific embodiments
shown and described without departing from the scope of the present
disclosure. This application is intended to cover any adaptations
or variations of the specific embodiments discussed herein.
Therefore, it is intended that this disclosure be limited only by
the claims and the equivalents thereof.
* * * * *