U.S. patent application number 15/628485 was filed with the patent office on 2017-10-05 for semiconductor die, semiconductor wafer and method for manufacturing the same.
This patent application is currently assigned to Advanced Semiconductor Engineering, Inc.. The applicant listed for this patent is Advanced Semiconductor Engineering, Inc.. Invention is credited to Chin-Cheng KUO, Lu-Ming LAI, Ying-Te OU.
Application Number | 20170287863 15/628485 |
Document ID | / |
Family ID | 59297834 |
Filed Date | 2017-10-05 |
United States Patent
Application |
20170287863 |
Kind Code |
A1 |
KUO; Chin-Cheng ; et
al. |
October 5, 2017 |
SEMICONDUCTOR DIE, SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING
THE SAME
Abstract
A semiconductor die includes a semiconductor body, an insulating
layer, a conductive circuit layer and at least one conductive bump.
The semiconductor body has a first surface, a second surface and a
side surface extending between the first surface and the second
surface. The insulating layer is disposed on the first surface and
the side surface of the semiconductor body. The insulating layer
includes a first insulating layer over the semiconductor body and a
second insulating layer over the first insulating later. The
insulating layer includes a step structure. The conductive circuit
layer is electrically connected to the first surface of the
semiconductor body, the conductive circuit layer includes at least
one pad, and the conductive bump is electrically connected to the
pad.
Inventors: |
KUO; Chin-Cheng; (Kaohsiung,
TW) ; OU; Ying-Te; (Kaohsiung, TW) ; LAI;
Lu-Ming; (Kaohsiung, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Advanced Semiconductor Engineering, Inc. |
Kaohsiung |
|
TW |
|
|
Assignee: |
Advanced Semiconductor Engineering,
Inc.
Kaohsiung
TW
|
Family ID: |
59297834 |
Appl. No.: |
15/628485 |
Filed: |
June 20, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15054502 |
Feb 26, 2016 |
9711473 |
|
|
15628485 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 24/13 20130101;
H01L 2224/05147 20130101; H01L 2224/023 20130101; H01L 2224/05647
20130101; H01L 2224/0401 20130101; H01L 2224/05624 20130101; H01L
2224/05124 20130101; H01L 24/05 20130101; H01L 2224/13024 20130101;
H01L 23/3185 20130101; H01L 2224/13111 20130101; H01L 24/14
20130101; H01L 2924/10156 20130101; H01L 24/11 20130101; H01L
2224/05666 20130101; H01L 23/3114 20130101; H01L 2224/05655
20130101; H01L 21/561 20130101; H01L 2224/13111 20130101; H01L
2924/00014 20130101; H01L 2224/05124 20130101; H01L 2924/00014
20130101; H01L 2224/05147 20130101; H01L 2924/00014 20130101; H01L
2224/05647 20130101; H01L 2924/00014 20130101; H01L 2224/05655
20130101; H01L 2924/00014 20130101; H01L 2224/05624 20130101; H01L
2924/00014 20130101; H01L 2224/05666 20130101; H01L 2924/00014
20130101; H01L 2224/023 20130101; H01L 2924/0001 20130101 |
International
Class: |
H01L 23/00 20060101
H01L023/00; H01L 21/78 20060101 H01L021/78; H01L 21/768 20060101
H01L021/768; H01L 23/528 20060101 H01L023/528; H01L 23/522 20060101
H01L023/522 |
Claims
1-20. (canceled)
21. A semiconductor die, comprising: a semiconductor body having a
first surface, a second surface and a side surface extending
between the first surface and the second surface; and an insulating
layer disposed on the first surface and the side surface of the
semiconductor body, the insulating layer comprising a first
insulating layer over the semiconductor body and a second
insulating layer over the first insulating later, the insulating
layer including a step structure.
22. The semiconductor die of claim 21, wherein at least one corner
of the second insulating layer is arcuate from a top view.
23. The semiconductor die of claim 21, wherein the first insulating
layer is disposed on the first surface and the side surface of the
semiconductor body, and an area of the second insulating layer is
smaller than an area of the first insulating layer from a top
view.
24. The semiconductor die of claim 23, wherein there is a gap
between a side surface of the second insulating layer and a side
surface of the first insulating layer.
25. The semiconductor die of claim 24, wherein the gap extends
around a periphery of the semiconductor die.
26. The semiconductor die of claim 25, wherein a width of the gap
varies around the periphery of the semiconductor die.
27. The semiconductor die of claim 21, further comprising a
conductive circuit layer electrically connected to the first
surface of the semiconductor body, the conductive circuit layer
comprising at least one pad.
28. The semiconductor die of claim 27, wherein the conductive
circuit layer further comprises a patterned circuit layer and at
least one conductive via, the patterned circuit layer comprises the
pad, and the conductive via connects the patterned circuit layer
and the first surface of the semiconductor body.
29. The semiconductor die of claim 28, further comprising at least
one conductive bump electrically connected to a respective pad.
30. A semiconductor wafer, comprising: a semiconductor body
defining at least one trench recessed from a first surface of the
semiconductor body; and an insulating layer disposed on the first
surface of the semiconductor body and on a side surface of the
trench, the insulating layer defining at least one groove in the
trench, wherein the insulating layer includes a step structure.
31. The semiconductor wafer of claim 30, wherein the trench does
not penetrate through the semiconductor body.
32. The semiconductor wafer of claim 30, wherein a bottom surface
of the trench is exposed from the insulating layer.
33. The semiconductor wafer of claim 30, wherein the insulating
layer comprises a first insulating layer and a second insulating
layer disposed over the first insulating layer, wherein at least
one corner of the second insulating layer is arcuate from a top
view.
34. The semiconductor wafer of claim 30, wherein the insulating
layer further defines a trough over the groove, and a width of the
trough is greater than a width of the groove.
35. The semiconductor wafer of claim 34, wherein the insulating
layer comprises a first insulating layer and a second insulating
layer, the first insulating layer is disposed on the first surface
of the semiconductor body and the side surface of the trench and
defines the groove in the trench, the second insulating layer is
disposed on the first insulating layer and defines the trough.
36. The semiconductor wafer of claim 30, further comprising a
conductive circuit layer electrically connected to the first
surface of the semiconductor body, the conductive circuit layer
comprising at least one pad.
37. The semiconductor wafer of claim 36, further comprising at
least one conductive bump electrically connected to a respective
pad.
38. A semiconductor die, comprising: a semiconductor body having a
first surface, a second surface and a side surface extending
between the first surface and the second surface; and an insulating
layer disposed on the first surface of the semiconductor body, the
insulating layer comprising a first insulating layer over the
semiconductor body and a second insulating layer over the first
insulating later, the insulating layer including a step
structure.
39. The semiconductor die of claim 38, wherein an area of the
second insulating layer is smaller than an area of the first
insulating layer from a top view.
40. The semiconductor die of claim 39, wherein there is a gap
between a side surface of the second insulating layer and a side
surface of the first insulating layer.
Description
BACKGROUND
1. Technical Field
[0001] The present disclosure relates to a semiconductor die,
semiconductor wafer and method for manufacturing the same. In
particular, the present disclosure relates to a semiconductor die
including a step structure and method for manufacturing the
same.
2. Description of the Related Art
[0002] When manufacturing a semiconductor wafer level package, a
substrate wafer may be separated into individual dice in a
singulation process. The singulation may be performed using a
blade. During singulation, stress can occur on a side surface of a
die, especially at a corner of the die (which is sometimes referred
to as a "stress concentration effect"). Such stress can cause
damage to a protection layer of the die, resulting, for example, in
a crack at an edge or a corner of a singulated die.
SUMMARY
[0003] In an aspect, a semiconductor die includes a semiconductor
body, an insulating layer, a conductive circuit layer and at least
one conductive bump. The semiconductor body has a first surface, a
second surface and a side surface extending between the first
surface and the second surface. The insulating layer is disposed on
the first surface and the side surface of the semiconductor body.
The insulating layer includes a first insulating layer over the
semiconductor body and a second insulating layer over the first
insulating later. The insulating layer includes a step structure.
The conductive circuit layer is electrically connected to the first
surface of the semiconductor body, the conductive circuit layer
includes at least one pad, and the conductive bump is electrically
connected to the pad.
[0004] In an aspect, a semiconductor die includes a semiconductor
body, an insulating layer, a conductive circuit layer, and a
conductive bump. The semiconductor body includes a first surface, a
second surface and a side surface extending between the first
surface and the second surface. The insulating layer is disposed on
the first surface, and includes a step structure. The conductive
circuit layer is electrically connected to the first surface of the
semiconductor body, and the conductive circuit layer includes a
pad. The conductive bump electrically connects to the pad.
[0005] In an aspect, a semiconductor wafer includes a semiconductor
body, an insulating layer, a conductive circuit layer and at least
one conductive bump. The semiconductor body defines at least one
trench recessed from a first surface of the semiconductor body. The
insulating layer is disposed on the first surface of the
semiconductor body and on a side surface of the trench. The
insulating layer defines at least one groove in the trench. The
conductive circuit layer is electrically connected to the first
surface of the semiconductor body, the conductive circuit layer
includes at least one pad, and the conductive bump is electrically
connected to the pad.
[0006] In an aspect, a semiconductor process includes (a) providing
a semiconductor body having a first surface and a second surface
opposite the first surface; (b) forming at least one trench on the
first surface of the semiconductor body; (c) forming an insulating
layer and a conductive circuit layer on the first surface of the
semiconductor body, wherein the insulating layer extends onto a
side surface of the trench to define at least one groove in the
trench, and the conductive circuit layer is electrically connected
to the first surface of the semiconductor body and includes at
least one pad; and (d) forming at least one conductive bump to
electrically connect to a respective pad.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] FIG. 1A illustrates a cross-sectional view of a
semiconductor die in accordance with an embodiment of the present
disclosure;
[0008] FIG. 1B illustrates a top view of the semiconductor device
of FIG. 1A;
[0009] FIG. 2A illustrates a cross-sectional view of a
semiconductor wafer in accordance with an embodiment of the present
disclosure;
[0010] FIG. 2B illustrates a top view of the semiconductor wafer of
FIG. 2A;
[0011] FIG. 3A, FIG. 3B, FIG. 3C, FIG. 3D, FIG. 3E, FIG. 3F and
FIG. 3G illustrate a semiconductor process according to an
embodiment of the present disclosure;
[0012] FIG. 4A, FIG. 4B and FIG. 4C illustrate a semiconductor
process according to an embodiment of the present disclosure;
and
[0013] FIG. 5 illustrates a semiconductor process according to an
embodiment of the present disclosure.
DETAILED DESCRIPTION
[0014] Spatial descriptions, such as "above," "below," "up,"
"left," "right," "down," "top," "bottom," "vertical," "horizontal,"
"side," "higher," "lower," "upper," "over," "under," and so forth,
are indicated with respect to the orientation shown in the figures
unless otherwise specified. It should be understood that the
spatial descriptions used herein are for purposes of illustration
only, and that practical implementations of the structures
described herein can be spatially arranged in any orientation or
manner, provided that the merits of embodiments of this disclosure
are not deviated by such arrangement.
[0015] A manufacturing process of making a semiconductor die may
begin with forming a trench on a top surface of a semiconductor
body by a first blade, followed by forming a protection layer on
the top surface of a semiconductor body such that the trench is
filled by the protection layer. Then, the semiconductor body may be
thinned from a bottom surface such as by grinding so that the
trench penetrates through the semiconductor body. A singulation
process may then be performed using a second blade, where the
second blade cuts through the protection layer in the trench so as
to form multiple individual semiconductor dice. In such a process,
the first blade is used to cut the semiconductor body (e.g.,
silicon), and the second blade is used to cut the protection layer
(e.g., a polymer). Therefore, the first blade is different from the
second blade, and time is spent to change blades. In addition,
after a blade is changed, the blade generally should be
realigned.
[0016] Additionally in the process described, using a protection
layer in the trench of the semiconductor body, a coefficient of
thermal expansion (CTE) of the protection layer does not match the
CTE of the semiconductor body. For example, the CTE of the
protection layer may be about 65 ppm/.degree. C. (parts per million
per degree Celsius), whereas the CTE of the semiconductor body may
be about 2.6 ppm/.degree. C. Therefore, before singulation, the
protection layer filled into the trench can result in significant
warpage, which can have a negative impact on subsequent stages of
the process.
[0017] Further, a stress can occur on a side surface of a die where
it is exposed to the second blade during singulation, and
especially at a corner of the die (the stress concentration
effect). Such stress can cause damage to the protection layer of
the die, such as resulting in a crack of an edge or a corner of the
singulated die.
[0018] To address the above concerns, a step structure and an
arc-shaped corner are provided at a top edge of the protection
layer of the dice before singulation according to embodiments of
the present disclosure. The techniques described reduce stress (and
stress concentration effect) so as to reduce a warpage of the
semiconductor die.
[0019] FIG. 1A is a cross-sectional view of a semiconductor die 1
in accordance with an embodiment of the present disclosure. The
semiconductor die 1 includes a semiconductor body 10, an insulating
layer 20, a conductive circuit layer 30 and one or more conductive
bumps 40.
[0020] The semiconductor body 10 includes silicon. The
semiconductor body 10 has a first surface 101, a second surface 102
opposite to the first surface 101 and a side surface 103 extending
between the first surface 101 and the second surface 102.
[0021] The insulating layer 20 includes a first insulating layer
201 and a second insulating layer 202. The first insulating layer
201 is disposed on the first surface 101 and the side surface 103
of the semiconductor body 10. The first insulating layer 201 has a
side surface 2011. The second insulating layer 202 is disposed on
the first insulating layer 201, and has a side surface 2021.
[0022] The insulating layer 20 includes a step structure 52, which
is defined by a difference in height between a top surface of the
first insulating layer 201 and a top surface of the second
insulating layer 202 (where "top surface" refers to the topmost
surface in the orientation shown in FIG. 1A) and by a gap g between
the side surface 2021 of the second insulating layer 202 and the
side surface 2011 of the first insulating layer 201. Thus, the
insulating layer 20 includes a notch portion 50 around a periphery
of the insulating layer 20 to form the step structure 52. In other
words, from a top view, an area of the second insulating layer 202
is smaller than an area of the first insulating layer 201, and the
side surface 2021 of the second insulating layer 202 is set back by
the gap g from the side surface 2011 of the first insulating layer
201 (e.g., the side surface 2021 of the second insulating layer 202
is not coplanar with the side surface 2011 of the first insulating
layer 201).
[0023] The first insulating layer 201 and the second insulating
layer 202 may include the same or similar materials, or may include
different materials. In one or more embodiments, one or both of the
first insulating layer 201 and the second insulating layer 202
includes a passivation material such as, for example, a
photosensitive polymer. In one or more embodiments, a total
thickness of the insulating layer 20 (thicknesses of the first
insulating layer 201 and the second insulating layer 202 together)
is in a range of about 13 micrometers (.mu.m) to about 35 .mu.m,
such as about 13 .mu.m to about 20 .mu.m, about 15 .mu.m to about
20 .mu.m, or about 20 .mu.m to about 35 .mu.m.
[0024] The conductive circuit layer 30 is inside the insulating
layer 20. The conductive circuit layer 30 is disposed over the
first insulating layer 201 and contacts the first surface 101 of
the semiconductor body 10, and the second insulating layer 202 is
disposed over the first conductive layer 30 (and, as discussed
above, over the first insulating layer 201). The conductive circuit
layer 30 is electrically connected to the first surface 101 of the
semiconductor body 10.
[0025] The conductive circuit layer 30 includes at least one
conductive via 32, a patterned circuit layer 34, at least one pad
36 and at least one under-bump metallization (UBM) 38. The first
insulating layer 201 defines at least one first opening 56. The
conductive via 32 is disposed in the first opening 56 of the first
insulating layer 201, and connects the patterned circuit layer 34
and the first surface 101 of the semiconductor body 10. The
patterned circuit layer 34 includes the pad 36. That is, the pad 36
is a portion of the patterned circuit layer 34. The second
insulating layer 202 defines at least one second opening 58 to
expose the pad 36. The UBM 38 is disposed in the second opening 58
to connect to the pad 36. In one or more embodiments, one or more
of the conductive via 32, the patterned circuit layer 34 and the
pad 36 include copper (Cu), aluminum (Al), another suitable metal,
or an alloy thereof. In one or more embodiments, the UBM 38
includes Cu, nickel (Ni), Al, titanium (Ti), another suitable
metal, or an alloy thereof.
[0026] The conductive bump 40 is electrically connected to a
respective pad 36, and is used for external connection. As shown in
FIG. 1A, the conductive bump 40 is disposed on the respective UBM
38. In one or more embodiments, the conductive bump 40 may include
tin (Sn), another suitable metal, or an alloy thereof.
[0027] FIG. 1B illustrates a top view of the semiconductor die 1 of
FIG. 1A. In the embodiment illustrated in FIG. 1B, each corner of
the second insulating layer 202 is arcuate from the top view,
whereas the first insulating layer 201 is rectangular from the top
view. As discussed above, due to the gap g, the area of the second
insulating layer 202 is smaller than the area of the first
insulating layer 201. The gap g extends fully around the
semiconductor die 1. Along the sides of the semiconductor 1, the
side surface 2021 of the second insulating layer 202 is
substantially parallel with the side surface 2011 of the first
insulating layer 201, with a gap g.sub.1 therebetween. At the
corners of the semiconductor die 1 (at the arcuate portion of the
second insulating layer 202), the side surface 2021 of the second
insulating layer 202 and the side surface 2011 of the first
insulating layer 201 are not parallel, and a gap g.sub.2
therebetween varies with the curvature of the arcuate portion of
the second insulating layer 202. Thus, the gap g between the side
surface 2021 of the second insulating layer 202 and the side
surface 2011 of the first insulating layer 201 is not uniform (the
width of the notch portion 50 is not uniform). That is, g.sub.1 is
not equal to g.sub.2, and the gap g.sub.2 at the corners of the
semiconductor die 1 is greater than about ( {square root over
(2)})(g.sub.1).
[0028] In the embodiment illustrated in FIG. 1A and FIG. 1B, the
first insulating layer 201 on the side surface 103 of the
semiconductor body 10 is a protection layer for protecting the
semiconductor body 10 from corrosion or moisture. A reliability of
the semiconductor die 1 can thus be improved. In addition, the step
structure 52 and arcuate corners of the second insulating layer 202
may reduce the stress concentration effect, and thus reduce warpage
or cracking of the semiconductor die 1.
[0029] FIG. 2A is a cross-sectional view of a semiconductor wafer 2
in accordance with an embodiment of the present disclosure. The
semiconductor wafer 2 is shown prior to singulation. The
semiconductor wafer 2 includes a semiconductor body 10, an
insulating layer 20, a conductive circuit layer 30 and at least one
conductive bump 40.
[0030] The semiconductor body 10 has a first surface 101, a second
surface 102 opposite to the first surface 101 and at least one
trench 12 recessed from the first surface 101 of the semiconductor
body 10. The trench 12 does not penetrate through the semiconductor
body 10, and is defined by two side surfaces 103' and a bottom
surface 121.
[0031] The insulating layer 20 includes a first insulating layer
201 and a second insulating layer 202. The first insulating layer
201 is disposed on the first surface 101 and the side surfaces 103'
of the trench 12. The first insulating layer 201 has a side surface
2011'. The second insulating layer 202 is disposed on the first
insulating layer 201, and has a side surface 2021.
[0032] The insulating layer 20 includes a step structure 52, which
is defined by a difference in height between a top surface of the
first insulating layer 201 and a top surface of the second
insulating layer 202 (where "top surface" refers to the topmost
surface in the orientation shown in FIG. 2A) and by a gap g between
the side surface 2021 of the second insulating layer 202 and the
side surface 2011' of the first insulating layer 201. In other
words, from a top view, an area of the second insulating layer 202
is smaller than an area of the first insulating layer 201, and the
side surface 2021 of the second insulating layer 202 is set back by
the gap g from the side surface 2011' of the first insulating layer
201 (e.g., the side surface 2021 of the second insulating layer 202
is not coplanar with the side surface 2011' of the first insulating
layer 201).
[0033] The first insulating layer 201 defines at least one groove
22 in the trench 12. That is, the first insulating layer 201 does
not fill the trench 12. Further, the insulating layer 20 does not
fully cover the bottom surface 121 of the trench 12 in the
embodiment of FIG. 2A; thus, the bottom surface 121 of the trench
12 is exposed.
[0034] The second insulating layer 202 defines at least one trough
54, and each trough 54 extends between the side surfaces 2021 of
adjacent die units (see FIG. 2B) that will become individual dice
after singulation. The trough 54 is wider than the groove 22 and
the trench 12.
[0035] The first insulating layer 201 and the second insulating
layer 202 may include the same or similar materials, or may include
different materials. In one or more embodiments, one or both of the
first insulating layer 201 and the second insulating layer 202
includes a passivation material such as, for example, a
photosensitive polymer. In one or more embodiments, a total
thickness of the insulating layer 20 (thicknesses of the first
insulating layer 201 and the second insulating layer 202 together)
is in a range of about 13 .mu.m to about 35 .mu.m, such as about 13
.mu.m to about 20 about 15 .mu.m to about 20 or about 20 .mu.m to
about 35 .mu.m.
[0036] The conductive circuit layer 30 is inside the insulating
layer 20. The conductive circuit layer 30 is disposed over the
first insulating layer 201 and contacts the first surface 101 of
the semiconductor body 10, and the second insulating layer 202 is
disposed over the first conductive layer 30 (and, as discussed
above, over the first insulating layer 201). The conductive circuit
layer 30 is electrically connected to the first surface 101 of the
semiconductor body 10.
[0037] The conductive circuit layer 30 includes at least one
conductive via 32, a patterned circuit layer 34, at least one pad
36 and at least one UBM 38. The first insulating layer 201 defines
at least one first opening 56. The conductive via 32 is disposed in
the first opening 56 of the first insulating layer 201, and
connects the patterned circuit layer 34 and the first surface 101
of the semiconductor body 10. The patterned circuit layer 34
includes the pad 36. That is, the pad 36 is a portion of the
patterned circuit layer 34. The second insulating layer 202 defines
at least one second opening 58 to expose the pad 36. The UBM 38 is
disposed in the second opening 58 to connect to the pad 36. In one
or more embodiments, one or more of the conductive via 32, the
patterned circuit layer 34 and the pad 36 include Cu, Al, another
suitable metal, or an alloy thereof. In one or more embodiments,
the UBM 38 includes Cu, Ni, Al, Ti, another suitable metal, or an
alloy thereof.
[0038] The conductive bump 40 is electrically connected to a
respective pad 36, and is used for external connection. As shown in
FIG. 2A, the conductive bump 40 is disposed on the respective UBM
38. In one or more embodiments, the conductive bump 40 may include
Sn, another suitable metal, or an alloy thereof.
[0039] FIG. 2B shows a top view of the semiconductor wafer 2 of
FIG. 2A. The groove 22 defines boundaries of multiple die units
which will be individual dice after singulation. The die unit is,
for example, the semiconductor die 1 of FIG. 1A and FIG. 1B after
singulation. As described with respect to the semiconductor die 1
FIG. 1A and FIG. 1B, each corner of the second insulating layer 202
is arcuate from the top view, whereas the first insulating layer
201 is rectangular from the top view; thus the gap g between the
side surface 2021 of the second insulating layer 202 and the side
surface 2011' of the first insulating layer 201 is not uniform.
That is, a width of the trough 54 is not uniform.
[0040] FIGS. 3A-3G illustrate a semiconductor process according to
an embodiment of the present disclosure.
[0041] Referring to FIG. 3A, a semiconductor body 10 is provided,
and the semiconductor body 10 has a first surface 101 and a second
surface 102 opposite to the first surface 101. In one or more
embodiments, a thickness of the semiconductor body 10 is in a range
of about 100 .mu.m to about 750 .mu.m, or about 250 .mu.m to about
300 .mu.m. In one or more embodiments, the semiconductor body 10
includes silicon.
[0042] Referring to FIG. 3B, at least one trench 12 is formed from
the first surface 101 of the semiconductor body 10. The trench 12
does not penetrate through the semiconductor body 10. The trench 12
is defined by two side surfaces 103' and a bottom surface 121. In
the embodiment illustrated, the trench 12 is formed by sawing the
semiconductor body 10 using a blade 70.
[0043] Referring to FIG. 3C, a first insulating layer 201 is formed
on the first surface 101 of the semiconductor body 10 and on the
side surfaces 103' of the trench 12. The first insulating layer 201
has side surfaces 2011' in the trench 12, which define a groove 22.
The first insulating layer 201 extends into the trench 12; however,
the first insulating layer 201 does not completely fill the trench
12, and does not fully cover the bottom surface 121 of the trench
12. Because the first insulating layer 201 does not completely fill
the trench 12, a mismatch of the CTE between the first insulating
layer 201 and the semiconductor body 10 will not result in warpage
of the semiconductor body 10.
[0044] At least one first opening 56 is formed in the first
insulating layer 201, such as by a lithography technique. The first
opening 56 exposes a portion of the first surface 101 of the
semiconductor body 10.
[0045] In one or more embodiments, the first insulating layer 201
is a passivation material (e.g., a photosensitive polymer), and is
formed by laminating a film structure. In one or more embodiments,
a thickness of the first insulating layer 201 is in a range of
about 5.5 .mu.m to about 17 .mu.m, such as about 5.5 .mu.m to about
10 .mu.m, or about 5.5 .mu.m to about 13 .mu.m.
[0046] Referring to FIG. 3D, a patterned circuit layer 34 and at
least one conductive via 32 are formed. The patterned circuit layer
34 includes a pad 36. The patterned circuit layer 34 is disposed on
the first insulating layer 201. The conductive via 32 is disposed
in the first opening 56 of the first insulating layer 201 to
connect the patterned circuit layer 34 and the first surface 101 of
the semiconductor body 10. In one or more embodiments, a metal
(e.g., Cu, Al, another suitable metal, or an alloy thereof) is
plated in the first opening 56 to form the conductive via 32, and
is further plated on the first insulating layer 201 in a pattern
(or is subsequently patterned) to form the patterned circuit layer
34.
[0047] Referring to FIG. 3E, a second insulating layer 202 is
formed on the first insulating layer 201 to cover the patterned
circuit layer 34, the conductive via 32 and the first insulating
layer 201. In one or more embodiments, the second insulating layer
202 is a passivation material (e.g., a photosensitive polymer), and
is formed by laminating a film structure. The second insulating
layer 202 and the first insulating layer 201 may include the same
or similar materials, or may include different materials.
[0048] At least one second opening 58 and at least one trough 54
are formed in the second insulating layer 202, such as by a
lithography technique. The trough 54 exposes the groove 22 and the
second opening 58 exposes the pad 36. The trough 54 surrounds the
second insulating layer 202 around a periphery of a die unit to
form a step structure 52 on the die unit. A width of the trough 54
is greater than a width of the groove 22. The second insulating
layer 202 and the first insulating layer 201 together form an
insulating layer 20.
[0049] Referring to FIG. 3F, at least one UBM 38 is formed on the
pad 36 in the second opening 58 of the second insulating layer 202.
The UBM 38 may include Cu, Ni, Al, Ti, another suitable metal, or
an alloy thereof. The conductive via 32, the patterned circuit
layer 34, the pad 36 and the UBM 38 together form a conductive
circuit layer 30.
[0050] Referring to FIG. 3G, at least one conductive bump 40 is
formed on the at least one UBM 38 to obtain the semiconductor wafer
2 as shown in FIG. 2A and FIG. 2B. Each conductive bump 40 is
electrically connected to the respective UBM 38. In one or more
embodiments, the conductive bump 40 includes Sn, another suitable
metal, or an alloy thereof.
[0051] Then, a portion of the semiconductor body 10 is removed from
the second surface 102 of the semiconductor body 10, such as by
backside grinding, until the groove 22 penetrates fully through the
semiconductor body 10 such that the die units are singulated, to
form individual semiconductor dice 1 as shown in FIG. 1A and FIG.
1B. In the embodiment illustrated in FIG. 3G, the backside grinding
is performed by using a rotatable polishing pad 92.
[0052] In the embodiment of FIGS. 3A-3G, a single blade 70 is used,
to perform sawing (FIG. 3B). Thus, an additional blade is not
needed, no blade change is needed, time to change the blade is
avoided, and time to realign the blade after a blade change is
avoided. Additionally, the die units of the semiconductor wafer 2
are separated at one stage to form the semiconductor die 1 (FIG.
3G). Accordingly, manufacturing time is shortened, and a production
units per hour (UPH) metric is increased. For example, for an eight
inch wafer with 25,000 die units, the manufacturing time for one
wafer is shortened by 2.5 hours using the manufacturing processes
of FIGS. 3A-3G, as compared to two stages of sawing.
[0053] FIGS. 4A-4C illustrate a semiconductor process according to
an embodiment of the present disclosure. The initial stage of this
embodiment is the same as shown in FIG. 3A, and the stage of FIG.
4A is subsequent to the stage of FIG. 3A.
[0054] Referring to FIG. 4A, a photoresist layer 80 is applied on
the first surface 101 of the semiconductor body 10. Then, a portion
of the photoresist layer 80 is removed to form at least one
photoresist layer opening 801 to expose the first surface 101 of
the semiconductor body 10.
[0055] Referring to FIG. 4B, the semiconductor body 10 is etched
through the photoresist layer opening 801 to form the trench 12.
The manufacturing stages of FIGS. 4A and 4B avoid using a blade,
including avoiding a difficulty in selecting a blade and alignment
of the blade. Therefore, the etching operation of FIGS. 4A and 4B
may improve trench formation accuracy.
[0056] Referring to FIG. 4C, the photoresist layer 80 is removed.
Then, the stages of FIG. 3C to FIG. 3G are performed subsequent to
the stage of FIG. 4C to obtain semiconductor dice such as the
semiconductor die 1 shown in FIG. 1A and FIG. 1B.
[0057] FIG. 5 illustrates a semiconductor process according to an
embodiment of the present disclosure. The initial stages of this
embodiment are the same as shown in FIG. 3A and FIG. 3B, and the
stage of FIG. 5 is subsequent to the stage of FIG. 3B. As shown in
FIG. 5, a first insulating layer 201 is formed to cover the first
surface 101 of the semiconductor body 10 and to completely fill the
trench 12. Then, a portion of the first insulating layer 201 is
removed (e.g., by a lithography technique) to obtain the device
illustrated in FIG. 3C. Specifically, a portion of the first
insulating layer 201 in the trench 12 is removed to form the groove
22, and a portion of the first insulating layer 201 on the first
surface 101 of the semiconductor body 10 is removed to form the
first opening 56. Then, the stages of FIG. 3D to FIG. 3G subsequent
to the stage of FIG. 5 are performed to obtain semiconductor dice
such as the semiconductor die 1 shown in FIG. 1A and FIG. 1B.
[0058] As used herein and not otherwise defined, the terms
"substantially," "substantial," "approximately" and "about" are
used to describe and account for small variations. When used in
conjunction with an event or circumstance, the terms can encompass
instances in which the event or circumstance occurs precisely as
well as instances in which the event or circumstance occurs to a
close approximation. For example, when used in conjunction with a
numerical value, the terms can encompass a range of variation of
less than or equal to .+-.10% of that numerical value, such as less
than or equal to .+-.5%, less than or equal to .+-.4%, less than or
equal to .+-.3%, less than or equal to .+-.2%, less than or equal
to .+-.1%, less than or equal to .+-.0.5%, less than or equal to
.+-.0.1%, or less than or equal to .+-.0.05%.
[0059] For another example, the term "substantially parallel" with
respect to two edges or surfaces can refer to lying along a line or
along a plane, with an angular displacement between the two edges
or surfaces being less than or equal to 10.degree., such as less
than or equal to 5.degree., less than or equal to 3.degree., less
than or equal to 2.degree., or less than or equal to 1.degree..
[0060] Additionally, amounts, ratios, and other numerical values
are sometimes presented herein in a range format. It is to be
understood that such range format is used for convenience and
brevity and should be understood flexibly to include numerical
values explicitly specified as limits of a range, but also to
include all individual numerical values or sub-ranges encompassed
within that range as if each numerical value and sub-range is
explicitly specified.
[0061] While the present disclosure has been described and
illustrated with reference to specific embodiments thereof, these
descriptions and illustrations are not limiting. It should be
understood by those skilled in the art that various changes may be
made and equivalents may be substituted without departing from the
true spirit and scope of the present disclosure as defined by the
appended claims. The illustrations may not necessarily be drawn to
scale. There may be distinctions between the artistic renditions in
the present disclosure and the actual apparatus due to
manufacturing processes and tolerances. There may be other
embodiments of the present disclosure which are not specifically
illustrated. The specification and the drawings are to be regarded
as illustrative rather than restrictive. Modifications may be made
to adapt a particular situation, material, composition of matter,
method, or process to the objective, spirit and scope of the
present disclosure. All such modifications are intended to be
within the scope of the claims appended hereto. While the methods
disclosed herein have been described with reference to particular
operations performed in a particular order, it will be understood
that these operations may be combined, sub-divided, or re-ordered
to form an equivalent method without departing from the teachings
of the present disclosure. Accordingly, unless specifically
indicated herein, the order and grouping of the operations are not
limitations.
* * * * *