U.S. patent application number 15/091074 was filed with the patent office on 2017-10-05 for lateral silicon nanospikes fabricated using metal-assisted chemical etching.
The applicant listed for this patent is INTERNATIONAL BUSINESS MACHINES CORPORATION. Invention is credited to STACEY M. GIFFORD, HUAN HU, PABLO MEYER ROJAS, JOSHUA T. SMITH.
Application Number | 20170280709 15/091074 |
Document ID | / |
Family ID | 59928523 |
Filed Date | 2017-10-05 |
United States Patent
Application |
20170280709 |
Kind Code |
A1 |
GIFFORD; STACEY M. ; et
al. |
October 5, 2017 |
LATERAL SILICON NANOSPIKES FABRICATED USING METAL-ASSISTED CHEMICAL
ETCHING
Abstract
The present disclosure relates to methods for forming an
antimicrobial nanostructure and antimicrobial articles. The methods
may include: providing a master template of a layout of the
antimicrobial nanostructure on a silicon substrate, depositing a
silicon nitride layer on a top surface of the silicon substrate,
forming a patterned lithographic resist mask layer on a top surface
of the silicon nitride layer, generating certain silicon pillars
according to the patterned lithographic resist mask using a resist
and reactive ion etching, forming certain lateral silicon
nanospikes on the silicon pillars by performing metal assisted
chemical etching (MacEtch), and removing the silicon nitride layer
and bonding a top cover glass on the silicon pillars to form the
antimicrobial nanostructure having lateral silicon nanospikes. The
antimicrobial article may include a component of an electronic
device, a biomedical article, a household product, a food grade
article, a transportation component, or a public building
component.
Inventors: |
GIFFORD; STACEY M.;
(RIDGEFIELD, CT) ; HU; HUAN; (YORKTOWN HEIGHTS,
NY) ; ROJAS; PABLO MEYER; (BROOKLYN, NY) ;
SMITH; JOSHUA T.; (CROTON-ON-HUDSON, NY) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
ARMONK |
NY |
US |
|
|
Family ID: |
59928523 |
Appl. No.: |
15/091074 |
Filed: |
April 5, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
A01N 25/00 20130101;
H01L 21/31 20130101; B82Y 30/00 20130101; B82Y 40/00 20130101; A01N
25/34 20130101 |
International
Class: |
A01N 25/00 20060101
A01N025/00 |
Claims
1. A method for forming an antimicrobial nanostructure, comprising:
providing a master template of a layout of the antimicrobial
nanostructure on a silicon substrate; depositing a silicon nitride
layer on a top surface of the silicon substrate; forming a
patterned lithographic resist mask layer on a top surface of the
silicon nitride layer; generating a plurality of silicon pillars
according to the patterned lithographic resist mask; forming a
plurality of lateral silicon nanospikes on the plurality of silicon
pillars; and removing the silicon nitride layer and bonding a top
cover glass on the plurality of silicon pillars to form the
antimicrobial nanostructure.
2. The method of claim 1, wherein each one of the plurality of
silicon pillars comprises a tubular shape having a first end
connected to the silicon substrate, and a second end extending away
from the silicon substrate, a diameter of each of the plurality of
silicon pillars in the range from about 50 nanometers to about 200
nanometers, and ranges therebetween, and a density in the range
from about 10 to about 100 per square micron, and ranges
therebetween.
3. The method of claim 1, wherein each one of the plurality of
lateral silicon nanospikes comprises a first end connected to a
corresponding silicon pillar, and a second end extending away from
the corresponding silicon pillar, each one of the nanospikes having
a second end diameter in the range from about 1 nanometer to about
10 nanometers, and ranges therebetween, a height in the range of
from about 5 nanometers to about 50 nanomaters, and ranges
therebetween, and a density in the range from about 100 to about
500 per square microns, and ranges therebetween.
4. The method of claim 1, wherein the generating a plurality of
silicon pillars according to the patterned lithographic resist mask
comprises using a resist and reactive ion etching (ME), wherein a
temperature of the ME is in the range of from about -10.degree. C.
to about 40.degree. C., and ranges therebetween.
5. The method of claim 4, wherein a temperature of the ME is in the
range of from about 20.degree. C. to about 30.degree. C., and
ranges therebetween.
6. The method of claim 1, wherein the forming a plurality of
lateral silicon nanospikes on the plurality of silicon pillars
comprises performing metal assisted chemical etching (MacEtch),
wherein a time of the MacEtch is in the range of from about 2
minutes to about 20 minutes, and ranges therebetween, and a
temperature of the MacEtch is in the range of from about
-10.degree. C. to about 40.degree. C., and ranges therebetween.
7. The method of claim 1, wherein the silicon substrate comprises a
monocrystalline silicon.
8. The method of claim 1, wherein the top cover glass has a
thickness in the range of from about 50 nanometers to about 500
nanometers, and ranges therebetween.
9. A method for forming an antibacterial silicon nanostructure, the
method comprising: providing a master template of a layout of the
antibacterial silicon nanostructure on a silicon substrate;
depositing a silicon nitride layer on a top surface of the silicon
substrate; forming a patterned lithographic resist mask layer on a
top surface of the silicon nitride layer; generating a plurality of
silicon pillars according to the patterned lithographic resist
mask; forming a plurality of lateral silicon nanospikes on the
plurality of silicon pillars; and removing the silicon nitride
layer and bonding a top cover glass on the plurality of silicon
pillars to form the antibacterial silicon nanostructure.
10. The method of claim 9, wherein the plurality of silicon pillars
comprises a tubular shape having a first end connected to the
silicon substrate, and a second end extending away from the silicon
substrate, a diameter of each of the plurality of silicon pillars
in the range of from about 50 nanometers to about 200 nanometers,
and ranges therebetween, and a density in the range of from about
10 to about 100 per square micron, and ranges therebetween.
11. The method of claim 9, wherein the plurality of lateral silicon
nanospikes comprises a first end connected to a corresponding
silicon pillar, and a second end extending away from the
corresponding silicon pillar, the nanospikes having a second end
diameter in the range of from about 1 nanometer to about 10
nanometers, and ranges therebetween, a height in the range of from
about 5 nanometer to about 50 nanometer, and ranges therebetween,
and a density in the range of from about 100 to about 500 per
square micron, and ranges therebetween.
12. The method of claim 9, wherein the generating a plurality of
silicon pillars according to the patterned lithographic resist mask
comprises using a resist and reactive ion etching (ME), wherein a
temperature of the ME is in the range of from about -10.degree. C.
to about 40.degree. C., and ranges therebetween.
13. The method of claim 9, wherein the forming a plurality of
lateral silicon nanospikes on the plurality of silicon pillars
comprises performing metal assisted chemical etching (MacEtch),
wherein a time of the MacEtch is in the range of from about 2
minutes to about 20 minutes, and ranges therebetween, and a
temperature of the MacEtch is in the range of from about
-10.degree. C. to about 40.degree. C., and ranges therebetween.
14. The method of claim 13, wherein a temperature of the MacEtch is
in the range of from about 20.degree. C. to about 30.degree. C.,
and ranges therebetween.
15. The method of claim 9, wherein the silicon substrate comprises
a monocrystalline silicon.
16. The method of claim 9, wherein the top cover glass has a
thickness in the range of from about 50 nanometers to about 500
nanometers, and ranges therebetween.
17. An antimicrobial article comprising: an antimicrobial
nanostructure formed on a silicon substrate according to a mater
template; wherein the antimicrobial nanostructure comprises a
plurality of silicon pillars and each of the plurality of silicon
pillars comprises a plurality of lateral silicon nanospikes; and a
top cover glass attached on a top surface of the antimicrobial
nanostructure, wherein the antimicrobial nanostructure is formed by
performing: providing a master template of a layout of the
antimicrobial nanostructure on a silicon substrate; depositing a
silicon nitride layer on a top surface of the silicon substrate;
forming a patterned lithographic resist mask layer on a top surface
of the silicon nitride layer; generating the plurality of silicon
pillars according to the patterned; forming the plurality of
lateral silicon nanospikes on the plurality of silicon pillars.
18. The antimicrobial article of claim 17, wherein the plurality of
silicon pillars comprises a tubular shape having a first end
connected to the silicon substrate, and a second end extending away
from the silicon substrate, a diameter of each of the plurality of
silicon pillars in the range of from about 50 nanometers to 200
nanometers, and ranges therebetween, a density in the range of from
about 10 to about 100 per square micron, and ranges therebetween,
and wherein the plurality of lateral silicon nanospikes comprises a
first end connected to a corresponding silicon pillar, and a second
end extending away from the corresponding silicon pillar, the
nanospikes having a second end diameter in the range of from about
1 nanometers to about 10 nanometers, and ranges therebetween, a
height in the range of from about 5 nanometers to about 50
nanometers and ranges therebetween, and a density in the range of
from about 100 to about 500 per square micron, and ranges
therebetween.
19. The antimicrobial article of claim 17, wherein the
antimicrobial article comprises a film having an antimicrobial
surface.
20. The antimicrobial article of claim 17, wherein the
antimicrobial article comprises a component of an electronic
device, a biomedical article, a household product, a food grade
article, a transportation component, or a public building
component.
Description
BACKGROUND
[0001] The present disclosure relates to antimicrobial surfaces,
and more specifically, to methods of producing articles having
lateral silicon nanospikes fabricated using metal assisted chemical
etching.
[0002] Microorganisms are everywhere in our environment. Although
many are harmless or even beneficial, some are pathogens that can
cause disease or illness in humans. One common route for
transmission of infectious diseases is by contact with surfaces
contaminated with infectious bacteria produced by an infected
person. Many microbes such as viruses can survive for days on
surfaces. Microbes can also grow and proliferate posing more safety
and health risks.
[0003] Studies of the contents of cells in microfluidic and
nanofluidic environments require reproducible and rapid lysis
techniques. Optimal lysis techniques for the study of proteins and
nucleic acids include those that do not require harsh chemical
treatment or strong physical agitation, such as detergents or
sonication. Such harsh techniques frequently lead to destruction of
the molecules of interest leading to a loss of product or signal.
Accordingly, alternative methods to provide an antimicrobial
surface are desirable. It would be a further advantage if such
antimicrobial surfaces can be provided in a consistent and cost
effective manner on different types of materials.
SUMMARY
[0004] In one aspect, the present disclosure relates to a method
for forming an antimicrobial nanostructure having lateral silicon
nanospikes. In certain embodiments, the method may include:
providing a master template of a layout of the antibacterial
nanostructure on a silicon substrate, depositing a silicon nitride
layer on a top surface of the silicon substrate, forming a
patterned lithographic resist mask layer on a top surface of the
silicon nitride layer, generating various silicon pillars according
to the patterned lithographic resist mask using a resist and
reactive ion etching, forming various lateral silicon nanospikes on
the silicon pillars by performing metal assisted chemical etching,
and removing the silicon nitride layer and bonding a top cover
glass on the plurality of silicon pillars to form the antimicrobial
nanostructure having lateral silicon nanospikes.
[0005] In another aspect, the present disclosure relates to a
method for forming an antibacterial silicon nanostructure. In
certain embodiments, the method may include: providing a master
template of a layout of the antibacterial nanostructure on a
silicon substrate, depositing a silicon nitride layer on a top
surface of the silicon substrate, forming a patterned lithographic
resist mask layer on a top surface of the silicon nitride layer,
generating various silicon pillars according to the patterned
lithographic resist mask using a resist and reactive ion etching,
forming various lateral silicon nanospikes on the silicon pillars
by performing metal assisted chemical etching, and removing the
silicon nitride layer and bonding a top cover glass on the
plurality of silicon pillars to form the antibacterial silicon
nanostructure.
[0006] In yet another aspect, the present disclosure relates to an
antimicrobial article. In certain embodiments, the antimicrobial
article may include an antimicrobial nanostructure and a top cover
glass. The antimicrobial nanostructure may be formed on a silicon
substrate according to a mater template and the antimicrobial
nanostructure may include various silicon pillars and each of the
silicon pillars may include various lateral silicon nanospikes. The
top cover glass is attached to a top surface of the antimicrobial
nanostructure. The antimicrobial nanostructure is formed by
performing: providing a master template of a layout of the
antimicrobial nanostructure on a silicon substrate, depositing a
silicon nitride layer on a top surface of the silicon substrate,
forming a patterned lithographic resist mask layer on a top surface
of the silicon nitride layer, generating the silicon pillars
according to the patterned lithographic resist mask using a resist
and reactive ion etching, and forming the lateral silicon
nanospikes on the silicon pillars by performing metal assisted
chemical etching.
[0007] Additional features and advantages are realized through the
techniques of the present disclosure. Other embodiments and aspects
of the disclosure are described in detail herein and are considered
a part of the claimed disclosure. For a better understanding of the
disclosure with the advantages and the features, refer to the
description and to the drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] The subject matter which is regarded as the disclosure is
particularly pointed out and distinctly claimed in the claims at
the conclusion of the specification. The foregoing and other
features and advantages of the disclosure are apparent from the
following detailed description taken in conjunction with the
accompanying drawings in which:
[0009] FIG. 1 is a cross-sectional view of a silicon substrate for
forming an antimicrobial nanostructure having lateral silicon
nanospikes according to certain embodiments of the present
disclosure;
[0010] FIG. 2 is a cross-sectional view of the silicon substrate
having a silicon nitride layer deposited thereon according to
certain embodiments of the present disclosure;
[0011] FIG. 3 is a cross-sectional view of the silicon substrate
having a patterned lithographic resist mask layer formed on a top
surface of the silicon nitride layer according to certain
embodiments of the present disclosure;
[0012] FIG. 4 is a cross-sectional view of the silicon substrate
having silicon pillars formed using resist and reactive ion etching
according to certain embodiments of the present disclosure;
[0013] FIG. 5 is a cross-sectional view of the silicon substrate
having lateral silicon nanospikes formed on sides of the silicon
pillars using a maskless metal assisted chemical etching following
the removal of the resist mask layer according to certain
embodiments of the present disclosure;
[0014] FIG. 6 is a cross-sectional view of the silicon substrate
having lateral silicon nanospikes formed on sides of the silicon
pillars with the silicon nitride layer removed according to certain
embodiments of the present disclosure;
[0015] FIG. 7 is a cross-sectional view of the antimicrobial
nanostructure having lateral silicon nanospikes covered with a top
cover glass according to certain embodiments of the present
disclosure;
[0016] FIG. 8 is a microscopic image showing the antimicrobial
nanostructure having lateral silicon nanospikes formed on the
silicon pillars according to certain embodiments of the present
disclosure;
[0017] FIG. 9 is a flow chart of a method 900 of fabricating an
antimicrobial nanostructures having lateral silicon nanospikes
according to certain embodiments of the present disclosure.
[0018] FIG. 10 illustrates that bacterial cell walls are
mechanically disrupted by lateral silicon nanospikes according to
certain embodiments of the present disclosure; and
[0019] FIG. 11 is a graph comparing the bacterial E. Coli cell
count on a smooth surface and the bacterial cell count on a lateral
silicon nanospike-containing surface according to certain
embodiments of the present disclosure.
DETAILED DESCRIPTION
[0020] The present disclosure is more particularly described in the
following examples that are intended as illustrative only since
numerous modifications and variations therein will be apparent to
those skilled in the art. Various embodiments of the disclosure are
now described in detail. Referring to the drawings, like numbers,
if any, indicate like components throughout the views. As used in
the description herein and throughout the claims that follow, the
meaning of "a", "an", and "the" includes plural reference unless
the context clearly dictates otherwise. Also, as used in the
description herein and throughout the claims that follow, the
meaning of "in" includes "in" and "on" unless the context clearly
dictates otherwise. Moreover, titles or subtitles may be used in
the specification for the convenience of a reader, which shall have
no influence on the scope of the present disclosure. Additionally,
some terms used in this specification are more specifically defined
below.
[0021] Alternative embodiments may be devised without departing
from the scope of this disclosure. It is noted that various
connections and positional relationships (e.g., over, below,
adjacent, etc.) are set forth between elements in the following
description and in the drawings. These connections and/or
positional relationships, unless specified otherwise, may be direct
or indirect, and the present disclosure is not intended to be
limiting in this respect. Accordingly, a coupling of entities may
refer to either a direct or an indirect coupling, and a positional
relationship between entities may be a direct or indirect
positional relationship. As an example of an indirect positional
relationship, references in the present disclosure to forming layer
"A" over layer "B" include situations in which one or more
intermediate layers (e.g., layer "C") is between layer "A" and
layer "B" as long as the relevant characteristics and
functionalities of layer "A" and layer "B" are not substantially
changed by the intermediate layer(s).
[0022] The terms used in this specification generally have their
ordinary meanings in the art, within the context of the disclosure,
and in the specific context where each term is used. Certain terms
that are used to describe the disclosure are discussed below, or
elsewhere in the specification, to provide additional guidance to
the practitioner regarding the description of the disclosure. It
will be appreciated that same thing can be said in more than one
way. Consequently, alternative language and synonyms may be used
for any one or more of the terms discussed herein, nor is any
special significance to be placed upon whether or not a term is
elaborated or discussed herein. The use of examples anywhere in
this specification including examples of any terms discussed herein
is illustrative only, and in no way limits the scope and meaning of
the disclosure or of any exemplified term. Likewise, the disclosure
is not limited to various embodiments given in this
specification.
[0023] The following definitions and abbreviations are to be used
for the interpretation of the claims and the specification. As used
herein, the terms "comprises," "comprising," "includes,"
"including," "has," "having," "contains" or "containing," or any
other variation thereof, are intended to cover a non-exclusive
inclusion. For example, a composition, a mixture, process, method,
article, or apparatus that comprises a list of elements is not
necessarily limited to only those elements but can include other
elements not expressly listed or inherent to such composition,
mixture, process, method, article, or apparatus.
[0024] Additionally, the term "exemplary" is used herein to mean
"serving as an example, instance, or illustration." Any embodiment
or design described herein as "exemplary" is not necessarily to be
construed as preferred or advantageous over other embodiments or
designs. The terms "at least one" and "one or more" may be
understood to include any integer number greater than or equal to
one, i.e. one, two, three, four, etc. The terms "a plurality" may
be understood to include any integer number greater than or equal
to two, i.e. two, three, four, five, etc. The term "connection" may
include both an indirect "connection" and a direct
"connection."
[0025] Unless otherwise defined, all technical and scientific terms
used herein have the same meaning as commonly understood by one of
ordinary skill in the art to which this disclosure pertains. In the
case of conflict, the present document, including definitions will
control.
[0026] The present disclosure will now be described more fully
hereinafter with reference to the accompanying drawings FIGS. 1-10,
in which certain exemplary embodiments of the present disclosure
are shown. The present disclosure may, however, be embodied in many
different forms and should not be construed as limited to the
embodiments set forth herein; rather, these embodiments are
provided so that this disclosure will be thorough and complete, and
will fully convey the scope of the disclosure to those skilled in
the art.
[0027] For the sake of brevity, conventional techniques related to
semiconductor device and IC fabrication may not be described in
detail herein. Moreover, the various tasks and process steps
described herein may be incorporated into a more comprehensive
procedure or process having additional steps or functionality not
described in detail herein. In particular, various steps in the
manufacture of semiconductor devices and semiconductor-based ICs
are well known and so, in the interest of brevity, many
conventional steps will only be mentioned briefly herein or will be
omitted entirely without providing the well-known process
details.
[0028] Methods and articles are provided that use nanostructures to
control microorganisms on a surface of the articles. The surfaces
have spike nanostructures and are effective to stop the growth of
or eliminate various types of microorganisms.
[0029] Glancing angle deposition (GLAD) is a technique that can be
used to fabricate three-dimensional nanostructures by rotating the
substrate in both polar and azimuthal directions. Reactive ion
etching is an etching technology used in microfabrication that uses
chemically reactive plasma to remove materials deposited on wafers.
Both glancing angle deposition and reactive ion etching require
expensive equipment; and the fabrication processes are conducted in
a vacuum environment.
[0030] Disclosed herein is a metal assisted chemical etching
process that is effective to form nanospikes having unique
structures on silicon substrates. Nanospikes can be made without
using masks. No expensive equipment is required. The fabrication
process is not conducted under vacuum and can be conveniently
carried out at moderate temperatures such as room temperature and
atmospheric pressure. The process is cost effective and readily
scalable. The structures of the nanospikes are controllable by
adjusting the process conditions. Advantageously the patterned
surfaces have antimicrobial properties.
[0031] Moreover, methods are provided that allow the manufacture of
nanostructures on materials other than silicon. The nanostructures
can be formed on a hard as well as a soft surface. The articles
having the nanostructure surfaces have applications in various
areas such as consumer electronics, medical devices, implants, food
contact applications, household products, mass transportations, and
the like.
[0032] FIG. 1 illustrates a silicon substrate 10 for forming an
antimicrobial nanostructure having lateral silicon nanospikes
according to certain embodiments of the present disclosure. The
silicon substrate 10 is not particularly limited. The silicon
substrate 10 may include silicon in amorphous or crystalline form.
Although the silicon substrate 10 may include metallurgical grade
silicon, silicon in less pure form can also be used. In certain
embodiments, the silicon substrate 10 may include a monocrystalline
silicon. Monocrystalline silicon consists of silicon in which the
crystal lattice of the entire solid is continuous, unbroken to its
edges, and free of grain boundaries. When desirable, before
contacting any etching compositions, the surface of the silicon
substrate 10 may be cleaned to remove or reduce native oxide or
other impurities. Chemicals such as sulfuric acid, hydrofluoric
acid, hydrogen peroxide, may be employed to clean the substrate.
Other oxidant can also be used. Alternatively or in addition, the
silicon substrate 10 may be baked in the presence of a reactive gas
to clean the silicon surface.
[0033] FIG. 2 shows a cross-sectional view of the silicon substrate
10 of the antimicrobial nanostructure having a silicon nitride
layer 20 deposited on a top surface of the silicon substrate 10.
Silicon nitride is a chemical compound of elements silicon and
nitrogen, with a formula Si.sub.3N.sub.4. It is a white,
high-melting-point solid that is relatively chemically inert, being
attacked by dilute hydrogen fluoride (HF) and hot Sulfuric acid
(H.sub.2SO.sub.4). It is very hard (8.5 on the mohs scale). It is
the most thermodynamically stable of the silicon nitrides.
[0034] After the silicon nitride layer 20 is deposited on the top
surface of the silicon substrate 10 of the antimicrobial
nanostructure, a patterned lithographic resist mask layer 30 may be
formed on a top surface of the silicon nitride layer 20, as shown
in FIG. 3. The patterned lithographic resist mask layer 30 is
formed according to a master template, which is defined and
designed by design engineers based on the application of the
antimicrobial nanostructure.
[0035] In certain embodiments, once the patterned lithographic
resist mask layer 30 is formed on the silicon nitride layer 20, a
standard lithography technique is utilized to apply resist and
reactive ion etching (ME) to generate a number of silicon pillars
12 of a desired diameter, as shown in FIG. 4. The silicon pillars
12 are formed on the silicon substrate 10 and density of the
silicon pillars 12 is determined based on various applications of
the antimicrobial nanostructure. In certain embodiments, the
density of the silicon pillars 12 may be 1 to 5 per square micron.
In other embodiments, the density of the silicon pillars 12 may be
10 to 100 per square micron. In certain embodiments, the diameter
of the silicon pillars 12 may be 50 nanometers to 200 nanometers.
In other embodiments, the diameter of the silicon pillars 12 may be
10 nanometers to 50 nanometers.
[0036] In certain embodiments, after the silicon pillars 12 are
formed and the patterned lithographic resist mask layer 30 is
removed, a maskless metal assisted chemical etching (MacEtch)
process is used to form lateral silicon nanospikes 14 as shown in
FIG. 5. The metal assisted chemical etching process is effective to
form nanospikes having unique structures on the silicon pillars of
the silicon substrates. The nanopikes may be made without using
masks. No expensive equipment is required. The fabrication process
is not conducted under vacuum and can be conveniently carried out
at moderate temperatures such as room temperature and atmospheric
pressure. The process is cost effective and readily scalable. The
structures of the spikes are controllable by adjusting the process
conditions. Advantageously the patterned surfaces have
antimicrobial properties.
[0037] Moreover, methods are provided that allow the manufacture of
nanostructures on materials other than silicon. The nanostructures
can be formed on a hard as well as a soft surface. The articles
having the nanostructure surfaces have applications in various
areas such as consumer electronics, medical devices, implants, food
contact applications, household products, mass transportations, and
the like.
[0038] FIG. 5 shows a cross-sectional view of the silicon substrate
having lateral silicon nanospikes 14 formed on sides of the silicon
pillars 12. In certain embodiments, the antimicrobial nanostructure
include lateral silicon nanospikes 14 having a first end disposed
on a silicon pillar 12 and a second end extending away from the
silicon pillar 12. The lateral silicon nanospikes 14 have a second
end diameter of about 1 nm to about 10 nm, a height of about 5
nanometers to about 50 nanometers, and a density of about 100 to
500 per square microns. The lateral silicon nanospikes 14 can also
have an average spacing from about 50 nanometers to about 100
nanometers. The second end diameter, height, density, and average
spacing are determined using microscopic technology. The density of
the lateral silicon nanospikes 14 is calculated by dividing the
number of lateral silicon nanospikes 14 on a given surface with the
area of the surface.
[0039] Although the lateral silicon nanospikes 14 shown in FIG. 5
have tapered thickness, it is contemplated that the lateral silicon
nanospikes 14 or a portion of the lateral silicon nanospikes 14 on
a surface can have substantially uniform thickness. As used herein,
"substantially uniform thickness" means that the thickness
variation is less than about 10% or less than about 5%. The lateral
silicon nanospikes 14 of the antimicrobial nanostructure may be
formed on circular surface, flat surface as well as on surfaces
having certain shapes. Depending on the specific applications of
the antimicrobial nanostructure, the shapes of the antimicrobial
surfaces are not particularly limited.
[0040] The lateral silicon nanospikes 14 of the antimicrobial
nanostructure may be effective to provide antimicrobial properties
to a surface. As used herein, antimicrobial properties refer to the
ability to eliminate or inhibit the growth of microorganisms. The
lateral silicon nanospikes 14 of the antimicrobial nanostructure
may provide antimicrobial protection covering a wide spectrum of
microorganisms, e.g. bacteria, fungi, algae, yeast, mold, and the
like. The bacteria include both Gram positive and Gram negative
bacteria. Some examples of Gram positive bacteria include, for
example, Bacillus cereus, Micrococcus luteus, and Staphylococus
aureus. Some examples of Gram negative bacteria include, for
example, Escherichia coli, Enterobacter aerogenes, Enterobacter
cloacae, and Proteus vulgaris. Strains of yeast include, for
example, Saccharomyces cerevisiae. Illustratively, on an
unpatterned surface, microorganisms such as Gram positive bacteria
Bacillus and Gram negative bacteria E. Coli replicate themselves
and colonize on the surface. On a surface having spike
nanostructures as defined herein, the bacteria count is
significantly reduced. Without wishing to be bound by theory, it is
believed that the second ends of the nanospikes penetrate the cell
walls of the microorganisms thus eliminating or inhibiting the
growth of these microorganisms.
[0041] The method of producing the antimicrobial nanostructure
includes contacting a silicon substrate with a silver salt and an
acid. The silver salt and the acid can be used sequentially or in
combination. In certain embodiments, the silicon substrate 10 is
contacted with an etching composition comprising a silver salt and
an acid. Advantageously, the method can be conducted at a moderate
temperature such as a temperature of about -10.degree. C. to about
40.degree. C. or about 20.degree. C. to about 30.degree. C.
[0042] After contacting the silver salt and the acid at an
atmospheric pressure, the lateral silicon nanospikes 14 of the
antimicrobial nanostructure may be produced within a few minutes.
The time to etch the silicon substrate 10 may be adjusted to
control the structure of the nanospikes. If the etching time is too
short, nanospikes may not be formed. The silicon substrate 10 may
have island-like structures rather than spikes on its surface. Such
structures may not be sharp enough to penetrate cell walls of
microorganism thus they are not effective to provide antimicrobial
properties. If the etching time is too long, the spikes may be too
dense. The dense spikes have a tendency to bundle together in use
thus losing their effectiveness in eliminating and inhibiting the
growth of microorganisms. Depending on the specific etching
composition, the etching time can vary from about 2 minutes to
about 20 minutes, about 3 minutes to about 15 minutes, or about 3
minutes to about 10 minutes to produce the nanostructure as defined
herein.
[0043] Exemplary silver salt in the etching composition may include
silver nitrate; and exemplary acid in the etching composition may
include hydrofluoric acid. Other silver salts that are effective to
provide silver ions may also be used. The silver salt and acid may
be separately stored in aqueous solutions and mixed prior to use.
Alternatively, the silicon substrate 10 may be treated with a
silver salt followed by an acid or vice versa. The concentration of
the silver salt is about 1 mM to about 100 mM or about 5 mM to
about 50 mM. The concentration of the acid can be about 0.1 M to
about 50 M or about 1 M to about 15 M.
[0044] After the lateral silicon nanospikes 14 are formed, the
silicon surface may be, optionally, washed or rinsed with one or
more wash compositions to remove the excess etching composition and
any byproducts. Useful washing compositions are not particularly
limited. Exemplary washing compositions include oxidizing agents
such as hydrogen peroxide. Ammonium hydroxide can also be used. In
an exemplary embodiment, the etched silicon substrate is cleaned
with a mixture of ammonium hydroxide and hydrogen peroxide to
remove byproducts such as silver dendrite.
[0045] In certain embodiments, the silicon nitride layer 20 on top
of the silicon substrate 10 may be removed as shown in FIG. 6.
[0046] In certain embodiments, a top cover glass 40 may be adhered
to the silicon pillars 12 having the lateral silicon nanospikes 14
as shown in FIG. 7.
[0047] FIG. 8 is a microscopic image showing the lateral silicon
nanospikes 14 formed on the silicon pillars 12 according to certain
embodiments of the present disclosure.
[0048] Referring now to FIG. 9, a method 900 to fabricate an
antimicrobial nanostructure having lateral silicon nanospikes is
shown according to certain embodiments of the present
disclosure.
[0049] At block 902, the antimicrobial nanostructure having lateral
silicon nanospikes is designed by design engineer, and the design
engineer may provide a master template of the antimicrobial
nanostructure having lateral silicon nanospikes. The fabrication of
the antimicrobial nanostructure is performed in a silicon substrate
10.
[0050] In certain embodiments, the silicon substrate 10 is not
particularly limited. The silicon substrate 10 may include silicon
in amorphous or crystalline form. Although the silicon substrate 10
may include metallurgical grade silicon, silicon in less pure form
can also be used. In certain embodiments, the silicon substrate 10
may include a monocrystalline silicon. Monocrystalline silicon
consists of silicon in which the crystal lattice of the entire
solid is continuous, unbroken to its edges, and free of grain
boundaries. When desirable, before contacting any etching
compositions, the surface of the silicon substrate 10 may be
cleaned to remove or reduce native oxide or other impurities.
Chemicals such as sulfuric acid, hydrofluoric acid, hydrogen
peroxide, may be employed to clean the substrate. Other oxidant can
also be used. Alternatively or in addition, the silicon substrate
10 may be baked in the presence of a reactive gas to clean the
silicon surface.
[0051] At block 904, a silicon nitride layer 20 may be deposited on
a top surface of the silicon substrate 10 of the antimicrobial
nanostructure, as shown in FIG. 3. Silicon nitride is a chemical
compound of elements silicon and nitrogen, with a formula Si3N4. It
is a white, high-melting-point solid that is relatively chemically
inert, being attacked by dilute hydrogen fluoride (HF) and hot
Sulfuric acid (H.sub.2SO.sub.4). It is very hard (8.5 on the mohs
scale). It is the most thermodynamically stable of the silicon
nitrides.
[0052] At block 906, after the silicon nitride layer 20 is
deposited on the top surface of the silicon substrate 10 of the
antimicrobial nanostructure, a patterned lithographic resist mask
layer 30 may be formed on a top surface of the silicon nitride
layer 20, as shown in FIG. 3. The patterned lithographic resist
mask layer 30 is formed according to the master template, which is
defined and designed by the design engineers based on the
application of the antimicrobial nanostructure.
[0053] At block 908, once the patterned lithographic resist mask
layer 30 is formed on the silicon nitride layer 20, a standard
lithography technique may be utilized to apply resist and reactive
ion etching (ME) to generate a number of silicon pillars 12 of a
desired diameter, as shown in FIG. 4, according to the master
template. The silicon pillars 12 are formed on the silicon
substrate 10 and density of the silicon pillars 12 is determined
based on various applications of the antimicrobial
nanostructure.
[0054] In certain embodiments, the silicon pillars may be in a
tubular shape having a first end connected to the silicon substrate
10, and a second end extending away from the silicon substrate 10.
In certain embodiments, the diameter of each of the silicon pillars
12 may be between 50 nanometers to 200 nanometers. The density of
the silicon pillars 12 may be between 10 to 100 per square micron.
In other embodiments, the diameter of each of the silicon pillars
12 may be between 100 nanometers to 500 nanometers. The density of
the silicon pillars 12 may be between 1 to 10 per square micron. In
certain embodiments, the silicon pillars 12 may be in other shapes
such as square, rectangular, oval, triangular, or any other
shapes.
[0055] At block 910, after the silicon pillars 12 are formed and
the patterned lithographic resist mask layer 30 is removed, a
maskless metal assisted chemical etching (MacEtch) process may be
used to form lateral silicon nanospikes 14 as shown in FIG. 5. The
metal assisted chemical etching process is effective to form
nanospikes having unique structures on the silicon pillars of the
silicon substrates. The nanopikes 14 may be made without using
masks. No expensive equipment is required. The fabrication process
is not conducted under vacuum and can be conveniently carried out
at moderate temperatures such as room temperature and atmospheric
pressure. The process is cost effective and readily scalable. The
structures of the spikes are controllable by adjusting the process
conditions. Advantageously the patterned surfaces have
antimicrobial properties.
[0056] In certain embodiments, the antimicrobial nanostructure
include lateral silicon nanospikes 14 having a first end disposed
on a silicon pillar 12 and a second end extending away from the
silicon pillar 12. The lateral silicon nanospikes 14 have a second
end diameter of about 1 nm to about 10 nm, a height of about 5 to
about 50 nanometers, and a density of about 100 to about 500 per
square microns. The lateral silicon nanospikes 14 can also have an
average spacing from about 50 nanometers to about 1 micron. The
second end diameter, height, density, and average spacing are
determined using microscopic technology. The density of the lateral
silicon nanospikes 14 is calculated by dividing the number of
lateral silicon nanospikes 14 on a given surface with the area of
the surface.
[0057] Although the lateral silicon nanospikes 14 shown in FIG. 5
have tapered thickness, it is contemplated that the lateral silicon
nanospikes 14 or a portion of the lateral silicon nanospikes 14 on
a surface can have substantially uniform thickness. As used herein,
"substantially uniform thickness" means that the thickness
variation is less than about 10% or less than about 5%. The lateral
silicon nanospikes 14 of the antimicrobial nanostructure may be
formed on circular surface, flat surface as well as on surfaces
having certain shapes. Depending on the specific applications of
the antimicrobial nanostructure, the shapes of the antimicrobial
surfaces are not particularly limited. FIG. 7 is a microscopic
image showing a perspective view of antimicrobial nanostructures
according to certain embodiments of the present disclosure.
[0058] The lateral silicon nanospikes 14 of the antimicrobial
nanostructure may be effective to provide antimicrobial properties
to a surface. As used herein, antimicrobial properties refer to the
ability to eliminate or inhibit the growth of microorganisms. The
lateral silicon nanospikes 14 of the antimicrobial nanostructure
may provide antimicrobial protection covering a wide spectrum of
microorganisms, e.g. bacteria, fungi, algae, yeast, mold, and the
like. The bacteria include both Gram positive and Gram negative
bacteria. Some examples of Gram positive bacteria include, for
example, Bacillus cereus, Micrococcus luteus, and Staphylococus
aureus. Some examples of Gram negative bacteria include, for
example, Escherichia coli, Enterobacter aerogenes, Enterobacter
cloacae, and Proteus vulgaris. Strains of yeast include, for
example, Saccharomyces cerevisiae. Illustratively, on an
unpatterned surface, microorganisms such as Gram positive bacteria
Bacillus and Gram negative bacteria E. Coli replicate themselves
and colonize on the surface. On a surface having spike
nanostructures as defined herein, the bacteria count is
significantly reduced. Without wishing to be bound by theory, it is
believed that the second ends of the nanospikes penetrate the cell
walls of the microorganisms thus eliminating or inhibiting the
growth of these microorganisms.
[0059] The method of producing the antimicrobial nanostructure
includes contacting a silicon substrate with a silver salt and an
acid. The silver salt and the acid can be used sequentially or in
combination. In certain embodiments, the silicon substrate 10 is
contacted with an etching composition comprising a silver salt and
an acid. Advantageously, the method can be conducted at a moderate
temperature such as a temperature of about -10.degree. C. to about
40.degree. C. or about 20.degree. C. to about 30.degree. C.
[0060] After contacting the silver salt and the acid at an
atmospheric pressure, the lateral silicon nanospikes 14 of the
antimicrobial nanostructure may be produced within a few minutes.
The time to etch the silicon substrate 10 may be adjusted to
control the structure of the nanospikes. If the etching time is too
short, nanospikes may not be formed. The silicon substrate 10 may
have island-like structures rather than spikes on its surface. Such
structures may not be sharp enough to penetrate cell walls of
microorganism thus they may not be effective to provide
antimicrobial properties. If the etching time is too long, the
spikes may be too dense. The dense spikes have a tendency to bundle
together in use thus losing their effectiveness in eliminating and
inhibiting the growth of microorganisms. Depending on the specific
etching composition, the etching time can vary from about 2 minutes
to about 20 minutes, about 3 minutes to about 15 minutes, or about
3 minutes to about 10 minutes to produce the nanostructure as
defined herein.
[0061] Exemplary silver salt in the etching composition may include
silver nitrate; and exemplary acid in the etching composition may
include hydrofluoric acid. Other silver salts that are effective to
provide silver ions may also be used. The silver salt and acid may
be separately stored in aqueous solutions and mixed prior to use.
Alternatively, the silicon substrate 10 may be treated with a
silver salt followed by an acid or vice versa. The concentration of
the silver salt is about 1 mM to about 100 mM or about 5 mM to
about 50 mM. The concentration of the acid can be about 0.1 M to
about 50 M or about 1 M to about 15 M.
[0062] After the lateral silicon nanospikes 14 are formed, the
silicon surface may be, optionally, washed or rinsed with one or
more wash compositions to remove the excess etching composition and
any byproducts. Useful washing compositions are not particularly
limited. Exemplary washing compositions include oxidizing agents
such as hydrogen peroxide. Ammonium hydroxide can also be used. In
an exemplary embodiment, the etched silicon substrate is cleaned
with a mixture of ammonium hydroxide and hydrogen peroxide to
remove byproducts such as silver dendrite.
[0063] At block 912, in certain embodiments, the silicon nitride
layer 20 on top of the silicon substrate 10 may be removed.
[0064] At block 914, in certain embodiments, a top cover glass 40
may be adhered to the silicon pillars 12 having the lateral silicon
nanospikes 14 as shown in FIG. 7. In certain embodiments, the top
cover glass 40 has a thickness of 50 nm to 100 nm. In other
embodiments, the top cover glass 40 has a thickness of 100 nm to
500 nm.
[0065] Referring now to FIG. 10, an illustration of bacterial cell
walls being mechanically disrupted by lateral silicon nanospikes 14
is shown according to certain embodiments of the present
disclosure. In certain embodiments, an antimicrobial nanostructure
is provided with certain designs that include many lateral silicon
nanospikes 14 formed on many silicon pillars 12, and these silicon
pillars 12 are arranged in a matrix form. Depending on the size of
certain target bacteria, the distance between the silicon pillars
may be changed, according to the master template. When bacterial
cells 50 flow or move along the arrow 51, the cell walls of the
bacterial cells 50 may be disrupted by the lateral silicon
nanospikes 14 on the silicon pillars 12.
[0066] The articles having an antimicrobial surface may be a simple
article, an article having a complex three-dimensional structure,
or may be a layer, sheet, film, or other two-dimensional surface.
The articles can be a product itself or a component of a product
used in consumer electronics, biodmedical products, household
products, mass transportations, public buildings, food contact
applications, or the like.
[0067] In an embodiment, the articles having antimicrobial surfaces
are films. Such films can be used as coatings on keyboards,
smartphones, laptops, or cameras.
[0068] A biomedical product can be medical devices, implants, and
barrier materials. Exemplary biomedical product may include
catheters, vascular grafts, blood tubings, balloons, shunts, wound
dressings, surgical gowns, gloves, aprons, and drapes.
[0069] Articles having antibacterial surfaces can be used in mass
transportations such as subways, buses, trains, airplanes, and
ships or public buildings such as theaters, bars, and restaurants.
Such articles may include components for seats, door knobs,
handles, shelves, toilet seats, trays, arm rests, and the like.
[0070] The silicon nanospike nanostructures can also be used to
provide flexible antibacterial fabrics. The fabrics can clean a
surface as a normal cloth. In the meantime, the fabrics having the
spike nanostructures can significantly eliminate bacterial on the
target surface. Other household products include toys and food
grade articles can also have these silicon nanospikes
nanostructures to prevent bacterial growth. The food grade articles
include food grade containers, coffee makers, juice extractors, and
blenders, or parts for coffer makers, juice extractors, and
blenders.
[0071] FIG. 11 is a graph comparing the E. Coli cell count on a
smooth surface and the bacterial cell count on an antimicrobial
nanostructure having lateral nanospikes on the silicon pillars. The
cell count on the smooth surface is at least twice as high as the
cell count on a patterned surface.
[0072] The corresponding structures, materials, acts, and
equivalents of all means or step plus function elements in the
claims below are intended to include any structure, material, or
act for performing the function in combination with other claimed
elements as specifically claimed. The description of the present
invention has been presented for purposes of illustration and
description, but is not intended to be exhaustive or limited to the
invention in the form disclosed. Many modifications and variations
will be apparent to those of ordinary skill in the art without
departing from the scope and spirit of the invention. The
embodiments were chosen and described in order to best explain the
principles of the invention and the practical application, and to
enable others of ordinary skill in the art to understand the
invention for various embodiments with various modifications as are
suited to the particular use contemplated.
[0073] The flow diagrams depicted herein are just one example.
There may be many variations to this diagram or the steps (or
operations) described therein without departing from the spirit of
the invention. For instance, the steps may be performed in a
differing order or steps may be added, deleted or modified. All of
these variations are considered a part of the claimed
invention.
[0074] While typical embodiments have been set forth for the
purpose of illustration, the foregoing descriptions should not be
deemed to be a limitation on the scope herein. Accordingly, various
modifications, adaptations, and alternatives can occur to one
skilled in the art without departing from the spirit and scope
herein. The terminology used herein was chosen to best explain the
principles of the embodiments, the practical application or
technical improvement over technologies found in the marketplace,
or to enable others of ordinary skill in the art to understand the
embodiments disclosed herein.
* * * * *