U.S. patent application number 15/072852 was filed with the patent office on 2017-09-21 for selective patterning of an integrated fluxgate device.
The applicant listed for this patent is Texas Instruments Incorporated. Invention is credited to Sopa Chevacharoenkul, Mona Eissa, Mark L. Jenson, Mark R. Kimmich, Sudtida Lavangkul, Byron J.R. Shulver, Lee Alan Stringer.
Application Number | 20170267521 15/072852 |
Document ID | / |
Family ID | 59850910 |
Filed Date | 2017-09-21 |
United States Patent
Application |
20170267521 |
Kind Code |
A1 |
Stringer; Lee Alan ; et
al. |
September 21, 2017 |
Selective Patterning of an Integrated Fluxgate Device
Abstract
A method comprises forming an etch stop layer, a first titanium
layer, a magnetic core, a second titanium layer, and patterning the
first and second titanium layers. The etch stop layer is formed
above a substrate. The first titanium layer is formed on the etch
stop layer. The magnetic core is formed on the first titanium
layer. The second titanium layer has a first portion encapsulating
the magnetic core with the first titanium layer, and a second
portion interfacing with the first titanium layer beyond the
magnetic core. The patterning of the first and second titanium
layers includes forming a mask over a magnetic core region and
etching the first and second titanium layers exposed by the mask
using a titanium etchant and a titanium oxide etchant.
Inventors: |
Stringer; Lee Alan;
(McKinney, TX) ; Eissa; Mona; (Allen, TX) ;
Shulver; Byron J.R.; (Richardson, TX) ;
Chevacharoenkul; Sopa; (Richardson, TX) ; Kimmich;
Mark R.; (Frisco, TX) ; Lavangkul; Sudtida;
(Richardson, TX) ; Jenson; Mark L.; (Allen,
TX) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Texas Instruments Incorporated |
Dallas |
TX |
US |
|
|
Family ID: |
59850910 |
Appl. No.: |
15/072852 |
Filed: |
March 17, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B81C 2201/0138 20130101;
G01R 33/0047 20130101; G01R 33/0052 20130101; B81C 2201/014
20130101; B81C 1/00825 20130101; B81C 1/00365 20130101; G01R 33/04
20130101 |
International
Class: |
B81C 1/00 20060101
B81C001/00; G01R 33/04 20060101 G01R033/04; G01R 33/00 20060101
G01R033/00 |
Claims
1. A method, comprising: forming an etch stop layer above a
substrate; forming a first titanium layer on the etch stop layer;
forming a magnetic core on the first titanium layer; forming a
second titanium layer having a first portion encapsulating the
magnetic core with the first titanium layer and a second portion
interfacing with the first titanium layer beyond the magnetic core;
forming a mask over a magnetic core region; and etching the first
and second titanium layers exposed by the mask using a titanium
etchant and a titanium oxide etchant.
2. The method of claim 1, further comprising: forming a circuit
having transistors on the substrate; forming a metal layer
interconnecting the transistors; and forming a dielectric layer
above the metal layer and below the etch stop layer.
3. The method of claim 1, wherein the forming the second titanium
layer includes interfacing the second portion of the second
titanium layer with a titanium oxide layer on the first titanium
layer.
4. The method of claim 1, wherein the forming the magnetic core
includes: forming a magnetic core layer including nickel iron
layers interleaving with insulation layers; patterning the magnetic
core layer with a photo-resist mask; and ashing the photo-resist
mask.
5. The method of claim 1, wherein: the etching includes a reactive
ion etching using the titanium etchant and the titanium oxide
etchant; and the titanium etchant includes a boron trichloride
(BCl.sub.3) plasma and a chlorine (Cl.sub.2) plasma defining a
titanium etchant ratio of the BCl.sub.3 plasma to the Cl.sub.2
plasma greater than two-third.
6. The method of claim 5, wherein the titanium etchant ratio ranges
from two-third to two.
7. The method of claim 5, wherein the titanium etchant ratio is
equal to or greater than two.
8. The method of claim 1, wherein the etching the first and second
titanium layers includes forming a carbon-based polymer sidewall
protecting the first portion of the second titanium layer while the
second portion of the second titanium layer is etched.
9. The method of claim 1, wherein: the etching includes a reactive
ion etching using the titanium etchant and the titanium oxide
etchant; and the titanium oxide etchant includes a trifluoromethane
(CHF.sub.3) plasma.
10. The method of claim 1, wherein the etching includes a reactive
ion etching applying a substrate bias voltage less than 100 V.
11. The method of claim 1, further comprising: monitoring a gaseous
concentration associated with the etch stop layer; and terminating
the etching upon detecting the gaseous concentration reaches a
predetermined threshold.
12. The method of claim 1, further comprising: preserving the first
titanium layer from being etched before the forming the magnetic
core and before the forming the second titanium layer.
13. A method, comprising: forming an etch stop layer above a
substrate; forming a first titanium layer on the etch stop layer;
forming a magnetic core on the first titanium layer while
preserving the first titanium layer from being etched; forming a
second titanium layer having a first portion encapsulating the
magnetic core with the first titanium layer and a second portion
interfacing with the first titanium layer beyond the magnetic core;
forming a mask over a magnetic core region; etching the first and
second titanium layers exposed by the mask using a titanium etchant
and a titanium oxide etchant; monitoring a gaseous concentration
associated with the etch stop layer; and terminating the etching
upon detecting the gaseous concentration reaches a predetermined
threshold.
14. The method of claim 13, wherein the forming the second titanium
layer includes interfacing the second portion of the second
titanium layer with a titanium oxide layer on the first titanium
layer.
15. The method of claim 13, wherein: the etching includes a
reactive ion etching using the titanium etchant and the titanium
oxide etchant; and the titanium etchant includes a boron
trichloride (BCl.sub.3) plasma and a chlorine (Cl.sub.2) plasma
defining a titanium etchant ratio of the BCl.sub.3 plasma to the
Cl.sub.2 plasma greater than two-third.
16. The method of claim 13, wherein: the etching includes a
reactive ion etching using the titanium etchant and the titanium
oxide etchant; and the titanium oxide etchant includes a
trifluoromethane (CHF.sub.3) plasma.
17. The method of claim 13, wherein the etching includes a reactive
ion etching applying a substrate bias voltage less than 100 V.
18. A fluxgate device, comprising: a semiconductor substrate; an
etch stop layer positioned above the semiconductor substrate; a
first titanium layer positioned on the etch stop layer, the first
titanium layer having a magnetic core region; a magnetic core
positioned on the first titanium layer within the magnetic core
region; and a second titanium layer encapsulating the magnetic core
with the first titanium layer, the second titanium layer
interfacing the first titanium layer with a titanium oxide layer
beyond the magnetic core region.
19. The fluxgate device of claim 18, further comprising: a circuit
having transistors developed on the semiconductor substrate; a
metal layer interconnecting the transistors; and a dielectric layer
positioned above the metal layer and below the etch stop layer.
20. The fluxgate device of claim 18, wherein the magnetic core
includes nickel iron layers interleaving with nitride layers.
21. The fluxgate device of claim 18, further comprising: a nitride
encapsulation layer covering the second titanium layer; and an
oxide layer formed above the nitride encapsulation layer, the oxide
layer having an oxide thickness sufficient to mitigate a thermal
stress between the nitride encapsulation layer and the second
titanium layer.
22. The fluxgate device of claim 21, wherein: the nitride
encapsulation layer has an encapsulation thickness; and the oxide
thickness of the oxide layer is greater than 85% of the
encapsulation thickness.
23. The fluxgate device of claim 21, wherein the oxide layer
includes: a first silicon oxide layer formed from a silane
precursor and conforming to a contour of the magnetic core
structure; and a second silicon oxide layer formed from a
tetraethyl orthosilicate (TEOS) precursor, the second silicon oxide
layer positioned above the first silicon oxide layer and conforming
to a surface of the semiconductor substrate.
24. The fluxgate device of claim 21, wherein: the magnetic core
structure has a longitudinal length extending in parallel with a
surface of the substrate; the nitride encapsulation layer has a
nitride thickness defining the thermal stress with the longitudinal
length of the core structure; and the oxide thickness of the oxide
layer is proportional to the thermal stress.
Description
BACKGROUND
[0001] A fluxgate device generally includes a magnetic core
structure and coil members coiling around the magnetic core. The
fluxgate device can be used for detecting a change in magnetic flux
in an environment adjacent to the magnetic core structure. Attempts
have been made to interface a fluxgate device with an integrated
circuit for adapting to various industrial applications. For
instance, a fluxgate device interfaced with a control circuit can
be adapted as current measurement devices for use in motor control
systems, or as position sensing device for use in robotic systems.
However, these solutions are generally costly to implement and
complex to operate. Thus, there is a need for a fluxgate device
that can be fabricated using a low-cost and high-yield process that
is integratable with one or more control circuits.
SUMMARY
[0002] The present disclosure describes systems and techniques
relating to the fabrication of integrated fluxgate devices. In one
aspect, a disclosed integrated fluxgate device includes a first
encapsulation layer for shielding a magnetic core structure of the
fluxgate and a second encapsulation layer for insulating the
shielded magnetic core structure. The first encapsulation layer may
include two layers of titanium (Ti) metal sandwiching the magnetic
core structure. During the patterning process of the magnetic core
structure, a titanium oxide (TiO) layer is formed on the lower
titanium layer. As such, the TiO layer interfaces in between the
two Ti layers. During a patterning process of the first
encapsulation layer, the TiO layer may cause uneven etching of the
two Ti layers. Such an uneven etching can lead to the delamination
of the Ti layers, thereby reducing the overall yield of the
fabrication process. The present disclosure provides an etching
process to uniformly etch away the exposed Ti--TiO--Ti stack, so as
to avoid delamination and protect the integrity of the magnetic
core structure. Advantageously, the disclosed etching process helps
prevent one or more corners of the fluxgate device from being
shorted or damaged, thereby increasing the overall yield of the
fabrication process for integrating the fluxgate device with one or
more control circuits.
[0003] In one implementation, for example, the present disclosure
introduces a method that comprises forming an etch stop layer, a
first titanium layer, a magnetic core, a second titanium layer, and
patterning the first and second titanium layers. The etch stop
layer is formed above a substrate. The first titanium layer is
formed on the etch stop layer. The magnetic core is formed on the
first titanium layer. The second titanium layer has a first portion
encapsulating the magnetic core with the first titanium layer, and
a second portion interfacing with the first titanium layer beyond
the magnetic core. The patterning of the first and second titanium
layers includes forming a mask over a magnetic core region and
etching the first and second titanium layers exposed by the mask
using a titanium etchant and a titanium oxide etchant.
[0004] In another implementation, for example, the present
disclosure introduces a method that comprises forming an etch stop
layer, a first titanium layer, a magnetic core, a second titanium
layer, and patterning the first and second titanium layers. The
etch stop layer is formed above a substrate. The first titanium
layer is formed on the etch stop layer. The magnetic core is formed
on the first titanium layer while the first titanium layer is
preserved from being etched. The second titanium layer has a first
portion encapsulating the magnetic core with the first titanium
layer, and a second portion interfacing with the first titanium
layer beyond the magnetic core. The patterning of the first and
second titanium layers includes forming a mask over a magnetic core
region, and etching the first and second titanium layers exposed by
the mask using a titanium etchant and a titanium oxide etchant. The
patterning of the first and second titanium layers also includes
monitoring a gaseous concentration associated with the etch stop
layer, and terminating the etching upon detecting the gaseous
concentration reaches a predetermined threshold.
[0005] In yet another implementation, for example, the present
disclosure introduces a fluxgate device that includes a
semiconductor substrate, an etch stop layer, a first titanium
layer, a magnetic core, and a second titanium layer. The etch stop
layer positioned above the semiconductor substrate. The first
titanium layer is positioned on the etch stop layer, and the first
titanium layer has a magnetic core region. The magnetic core
positioned on the first titanium layer within the magnetic core
region. Within the magnetic core region, the second titanium layer
encapsulates the magnetic core with the first titanium layer.
Beyond the magnetic core region, the second titanium layer
interfaces the first titanium layer with a titanium oxide
layer.
[0006] The present disclosure describes systems and techniques
relating to the fabrication of integrated fluxgate devices. In one
aspect, a disclosed integrated fluxgate device includes a stress
relief structure for mitigating a thermal stress between two or
more encapsulation layers covering a magnetic core. Advantageously,
the stress relief structure helps prevent one or more corners of
the fluxgate device from cracking, thereby increasing the overall
yield of a disclosed fabrication process for integrated the
fluxgate with one or more control circuits.
DRAWING DESCRIPTIONS
[0007] FIG. 1 shows a cross-sectional view of an integrated
fluxgate circuit according to an aspect of the present
disclosure.
[0008] FIG. 2A shows a flow chart of a process for fabricating an
integrated fluxgate circuit according to an aspect of the present
disclosure.
[0009] FIG. 2B shows a flow chart of a process for forming a stress
relief layer according to an aspect of the present disclosure.
[0010] FIG. 2C shows a flow chart of a process for forming an
encapsulation layer according to an aspect of the present
disclosure.
[0011] FIGS. 3A-3J show cross-sectional views of an integrated
fluxgate circuit during a fabrication process according to an
aspect of the present disclosure.
[0012] Like reference symbols in the various drawings indicate like
elements. Details of one or more implementations of the present
disclosure are set forth in the accompanying drawings and the
description below. The figures are not drawn to scale and they are
provided merely to illustrate the disclosure. Specific details,
relationships, and methods are set forth to provide an
understanding of the disclosure. Other features and advantages may
be apparent from the description and drawings, and from the
claims.
DETAILED DESCRIPTION
[0013] FIG. 1 shows a cross-sectional view of an integrated
fluxgate circuit 100 according to an aspect of the present
disclosure. The integrated fluxgate circuit 100 includes a circuit
110 and a fluxgate device 120 integrated with the circuit 110 to
form a single integrated circuit die. According to an aspect of the
present disclosure, the circuit 110 includes one or more control
circuits that are coupled to the fluxgate device 120. The circuit
110 can thus be used for controlling the operations of the fluxgate
device 120. For instance, the circuit 110 may calibrate the
fluxgate device 120 and receive one or more current signals from
the fluxgate device 120. Based on the received current signals, the
circuit 110 may sense a motion or a position by determining a
change in magnetic flux in association with the received current
signals. The circuit 110 can be an integrated circuit with two or
more transistors formed on a substrate and connected by one or more
interconnect wiring layers. In one implementation, for example, the
circuit 110 is formed on a substrate 101, which includes a
semiconducting material such as silicon. The circuit 110 includes a
first transistor 103 and a second transistor 104 formed on the
substrate 101.
[0014] The first transistor 103 is formed on a first active region
105, whereas the second transistor 104 is formed on a second active
region 106. The first transistor 103 can be a p-channel device in
that the first active region 105 includes an n-well 112 and a
couple of p-doped regions 113 formed in the n-well 112. The p-doped
regions 113 serve as the drain and source terminals of the first
transistor 103, each of which is coupled to interconnect wiring
layers 108. The first transistor 103 includes a gate structure 115
that defines a channel region between the p-doped regions 113. The
gate structure 115 is also coupled to the interconnect wiring
layers 108.
[0015] The second transistor 104 can be an n-channel device in that
the second active region 106 is a part of the substrate 101, which
can include p-doped materials. The second active region 106 is
separated from the first active region by a field oxide element
102, which typically resides in a shallow trench isolation region.
The second active region 106 may include a couple of n-doped
regions 114, which serve as the drain and source terminals of the
second transistor 104. Each of the n-doped region 114 is coupled to
the interconnect wiring layers 108. The second transistor 104
includes a gate structure 116 that defines a channel region between
the n-doped regions 114. The gate structure 116 is also coupled to
the interconnect wiring layers 108.
[0016] Although FIG. 1 illustrates two particular types of
transistors having active regions arranged in a particular fashion,
the circuit 110 may include other types of transistors
characterized by different active region arrangements. In one
implementation, for example, the circuit 110 may operate under high
voltage conditions. As such, the circuit 110 may include lateral
diffused metal oxide semiconductor (LDMOS) transistors, which in
some arrangements, may include deep trench structures surrounding
one or more active regions. In another implementation, for example,
the circuit 110 may be fabricated using Bi-CMOS technologies. As
such, the circuit 110 may include both CMOS transistors and bipolar
junction transistors.
[0017] The interconnect wiring layers 108 are separated by several
inter-level dielectric (ILD) layers 107. Depending on the
complexity of the circuit 110, the number of interconnect wiring
layers 108 may vary. Moreover, the interconnect wiring layers 108
includes a top interconnect layer 109 that is directly under and
connected to the fluxgate device 120. The interconnect wiring
layers 108 may include polysilicon and/or a conductive material
such as copper and aluminum. The interconnect wiring layers 108 are
connected using one or more via structures, which can be filled
with a conductive material such as tungsten.
[0018] The top interconnect layer 109 includes one or more metallic
materials such as copper and aluminum. The top interconnect layer
109 may be coupled to the fluxgate device 120 through a first
fluxgate metal layer 122 and an inter-device via 121. The fluxgate
device 120 is formed above the interconnect wiring layers 108 and
the top interconnect layer 109. In general, the fluxgate device 120
includes a set of lower coil members 125, a set of upper coil
members 126, and a magnetic core structure 130.
[0019] The lower coil members 125 can be formed using the same
process as the first fluxgate metal layer 122; whereas the upper
coil member 126 can be formed using the same process as a second
fluxgate metal layer 124. The second fluxgate metal layer 124 can
be connected to the first fluxgate metal layer 122 through an
intra-fluxgate via 123. The fluxgate device 120 may include one or
more etch stop layers to protect the circuit 110 during the
fabrication process of the fluxgate device 120. In one
implementation, for example, the fluxgate device 120 includes a
first etch stop layer 151 formed above the ILD layer 107, a
dielectric layer 152 formed on the first etch stop layer 152, and a
second etch stop layer 153 formed on the dielectric layer 152. Each
of the layers 151, 152, and 153 may also serve as an insulation
layer for insulating the fluxgate device 120 from the circuit 110.
The first and second etch stop layers 151 and 153 may include a
nitride material such as silicon nitride. The dielectric layer 152
may include an oxide material such as silicon oxide.
[0020] The magnetic core structure 130 is formed above the top
interconnect metal layer 109 and thus defines a plateau protruding
above the top interconnect metal layer 109. The magnetic core
structure 130 includes multiple magnetic layers 132 interleaving
with multiple insulating layers 133. In one implementation, each of
the magnetic layers 132 may include a cobalt alloy. In another
implementation, each of the magnetic layers 132 includes a nickel
iron (NiFe) alloy. More specifically, each of the magnetic layers
132 may include a weight ratio of about 80% nickel to 20% iron. For
example, the magnetic layers 132 may include 82 weight percent of
nickel and 18 weight percent of iron. And each of the magnetic
layers 132 may have a thickness of 3,350 .ANG.. The insulating
layers 133 serve to insulate the magnetic layers 132 from one
another. In one implementation, each of the insulating layers 133
includes an aluminum nitride (AlN) material. And each of the
insulating layers 133 may have a thickness of 70 .ANG..
[0021] The magnetic core structure 130 is protected by the first
encapsulation layer 136 and the second encapsulation layer 138. The
first encapsulation layer 136 has a bottom portion serves as a seed
layer for developing the magnetic core structure 130. The bottom
portion of the first encapsulation layer 136 is insulated from the
top interconnect metal layer 122 by an insulation layer such as
layers 151, 152, and 153. The first encapsulation layer 136 also
includes a top portion to cover and protect the magnetic core
structure 130. The first encapsulation layer 136 defines a magnetic
core region 170 for positioning the magnetic core structure 130.
The first encapsulation layer 136 includes a metallic material that
is suitable for developing the magnetic core structure 130 thereon
and for protecting the magnetic core structure 130 thereunder from
various types of process stress. In one implementation, for
example, the first encapsulation layer 136 includes a titanium (Ti)
metal, which has a relatively high thermal expansion coefficient
(e.g., at about 8.6.times.10E-6 m/K).
[0022] Due to the oxidation of the Ti metal, the first
encapsulation layer 136 includes a titanium oxide (TiO) layer 160
interfaces between the top and bottom portions of the first
encapsulation layer 136. The first encapsulation layer 136 is
formed after the top and bottom Ti layers as well as the middle TiO
layer 160 are patterned and etched. The present disclosure
introduces an etching process to preserve the integrity of the
Ti--TiO--Ti stack (i.e., the bottom corner edges of the first
encapsulation layer 136) along the periphery of the first
encapsulation layer 136. This etching process is disclosed in
greater details with the description of FIGS. 2C and 3C-3F. The
disclosed etching process helps prevent delamination around the
corners of the first encapsulation layer 136, which allows the
magnetic core structure 130 to be properly shielded and protected.
A semiconductor wafer for manufacturing the integrated fluxgate
circuit 100 is shown to have a high yield where the disclosed
etching process is implemented.
[0023] The second encapsulation layer 138 protects and insulates
the first encapsulation layer 136. The second encapsulation layer
138 includes a top portion that covers the first encapsulation
layer 136. The second encapsulation layer 138 also includes a
bottom portion on which the first encapsulation layer 136 is
formed. In one implementation, for example, the bottom portion of
the second encapsulation layer 138 can be the second etch stop
layer 153. In another implementation, for example, the bottom
portion of the second encapsulation layer 138 may include an
insulation layer (not shown) formed between the second etch stop
layer 153 and the bottom portion of the first encapsulation layer
136. The second encapsulation 138 includes a material that is
suitable for insulating the first encapsulation layer 136 and
protecting the first encapsulation layer 136 from one or more
etching process. In one implementation, for example, the second
encapsulation layer 138 includes a nitride material (e.g., silicon
nitride), which has a relatively low thermal expansion coefficient
(e.g., ranges from 1.47.times.10E-6 m/K to 3.7.times.10E-6 m/K)
when compared to the thermal expansion coefficient of the first
encapsulation layer 136.
[0024] Due to the difference in thermal expansion coefficients
between the first encapsulation layer 136 and the second
encapsulation layer 138, these two layers may experience a
significant thermal mechanical stress when there is a substantial
temperature change during the fabrication process. In particular,
one of these two layers may expand or contract at a much higher
rate than the other layer. As a result of this thermal mechanical
stress, the integrated fluxgate circuit 100 may experience cracking
along crack lines 137 surrounding the bottom corners of the
magnetic core structure 130. The severity of these crack lines 137
depends on a few factors. One factor includes the longitudinal size
(L) of the magnetic core structure 130. In general, the
longitudinal size (L) of the magnetic core structure 130 can be
understood as the greater one of the longitudinal length or
longitudinal width of the magnetic core structure 130. In one
implementation, for example, the magnetic core structure 130 may
have a longitudinal width of 100 um, a longitudinal length of 1,450
um, and a thickness of 1.73 um. Then, the longitudinal size (L) of
the magnetic core structure 130 can be 1,450 um.
[0025] The relatively large longitudinal size (L) of the magnetic
core structure 130 creates a specific problem not presented in
conventional integrated circuits. This relatively large
longitudinal size (L) exacerbates the thermal mechanical stress
between the first encapsulation layer 136 and the second
encapsulation layer 138. In particular, the second encapsulation
layer 138 may be formed under high temperature (e.g., 400.degree.
C.), and the fabrication process may involve substantial cooling
before the integrated fluxgate circuit 100 undergoes the next
process step. The substantial cooling can be attributed to
switching of process chambers, transportation of wafers, and/or
process tool preparation time. In any event, the substantial
cooling may range from a 150.degree. C. drop to more than a
200.degree. C. drop.
[0026] This substantial drop of process temperature causes the
first encapsulation layer 136 to contract at a significantly
different pace from the second encapsulation layer 138. In the
event that the first encapsulation layer 136 includes a titanium
material and the second encapsulation layer 138 includes a nitride
material, the first encapsulation layer 136 will contract at a much
faster pace than the second encapsulation layer 138 when there is a
substantial cooling. As a result, the first and second
encapsulation layers 136 and 138 will experience a thermal
mechanical stress asserted in between them. This thermal mechanical
stress is heightened especially when the magnetic core structure
130 includes a material (e.g., NiFe) with a thermal expansion
coefficient that is even higher than that of the first
encapsulation layer 136. When the thermal mechanical stress is high
enough, the first and second encapsulation layers 136 and 138 may
crack along the crack lines 137. These crack lines 137 may extend
downward to the circuit 110, which may impact the structural
integrity of the interconnect wiring layers 108.
[0027] The present disclosure provides a cost efficient solution to
mitigate the thermal mechanical stress between the first and second
encapsulation layers 136 and 138, and any other structures for
protecting and/or insulating the magnetic core structure 130. The
disclosed solution includes a stress relief structure formed above
the second encapsulation layer 138. According to one aspect of the
solution, the disclosed stress relief structure has a thermal
expansion coefficient that is lower than that of the second
encapsulation layer 138. According to another aspect of the
solution, the disclosed stress relief structure covers the second
encapsulation layer 138 and has a thickness that is within the same
magnitude as the thickness of the second encapsulation layer 138.
According to yet another aspect of the solution, the disclosed
stress relief structure is formed shortly after the second
encapsulation layer 138 is formed and within similar temperature
ranges as the second encapsulation layer 138 is formed. To that
end, the disclosed stress relief structure is formed without the
substantially cooling of the second encapsulation layer 138 after
the second encapsulation layer 138 is formed.
[0028] In one implementation, for instance, the disclosed stress
relief structure includes an oxide layer 140 formed above the
second encapsulation layer 138. In general, the oxide layer 140 may
have a thermal expansion coefficient of about 5.6.times.10E-7 m/V,
which is lower than that of the second encapsulation layer 138. The
oxide layer 140 includes an oxide thickness (e.g., 143, or 143 in
combination with 145) that is sufficient to mitigate the thermal
mechanical stress (hereinafter "thermal stress") between the first
and second encapsulation layers 136 and 138. The entire oxide layer
140 may be formed without substantial cooling after the second
encapsulation layer 138 is formed. Alternatively, a lower portion
(e.g., a first oxide layer 142) of the oxide layer 140 can be
formed without substantial cooling while an upper portion (e.g., a
second oxide layer 144) of the oxide layer 140 can be formed with
substantial cooling.
[0029] To avoid substantial cooling of the second encapsulation
layer 138, the oxide layer 140 can be formed using the same tool
that forms the second encapsulation layer 138. For example, a
plasma-enhanced chemical vapor deposition (PECVD) tool can be used
for depositing the oxide layer 140 shortly after depositing the
second encapsulation layer 138. To efficiently protect the
encapsulation layers (e.g., 136 and/or 38) from cracking around the
magnetic core structure 130, the oxide layer 130 may have a minimum
thickness 143 that is sufficient to mitigate the thermal stress
between the encapsulation layers. In one implementation, the
minimum thickness 143 of the oxide layer 140 can be based upon a
stress ratio of the thermal stress associated with the longitudinal
size (L) of the magnetic core structure 130. The minimum oxide
thickness 143 thus correlates to the stress ratio according to this
aspect of the disclosure. More specifically, the minimum oxide
thickness 143 can be directly proportional to the stress ratio.
That is, the higher the stress ratio, the greater the minimum oxide
thickness 143. The stress ration can be defined by the
encapsulation thickness (e.g., the first encapsulation thickness
134 and the second encapsulation thickness), the longitudinal size
(L), and the thermal expansion coefficients of the respective
encapsulation layers vis-a-vis the magnetic core structure 130.
[0030] For instance, where the second encapsulation layer 138
includes a nitride material with an encapsulation thickness 135,
the minimum oxide thickness 143 of the oxide layer 140 can be at
least 85% of the encapsulation thickness 135. More specifically,
where the second encapsulation layer 138 includes a silicon nitride
with a thickness of 4,700 .ANG., the minimum oxide thickness 143 of
the oxide layer 140 can be 4,000 .ANG. or more in order to preserve
a crack-free encapsulation layer (e.g., 136 or 138).
[0031] To streamline the fabrication process, the process time for
forming the second encapsulation layer 138 and the oxide layer 140
may be roughly the same so as to avoid substantial cooling of the
second encapsulation layer 138 while allowing the minimum oxide
thickness 143 to be developed. This process time allocation may
lead to a relatively equal distribution of thickness between the
second encapsulation layer 138 and a first oxide layer 142 (e.g.,
the lower portion of the oxide layer 140). To further reinforce the
first oxide layer 142, a second oxide layer 144 (e.g., the upper
portion of the oxide layer 140) may be formed on top of the first
oxide layer 142. Because the first oxide layer 142 likely provides
a sufficient amount of thermal stress relief to the encapsulation
layer (e.g., the first and second encapsulation layers 136 and
138), the second oxide layer 144 may be formed after the
encapsulation layers undergo substantial cooling. That is, the
second oxide layer 144 may be formed with a process tool that is
different from the process tool that forms the second encapsulation
layer 138. Moreover, the second oxide layer 144 may include a
second oxide thickness 145 in addition to the first oxide thickness
(i.e., the minimum oxide thickness) 143.
[0032] In one implementation, the first oxide layer 142 may include
a first silicon oxide material formed from a silane (SiH.sub.4)
precursor. The first oxide layer 142 generally conforms to a
plateau contour defined by the magnetic core structure 130 because
silane-based silicon oxide typically has good uniformity. The
second oxide layer 144 may include a second silicon oxide material
formed from a tetraethyl orthosilicate (TEOS) precursor, and the
second oxide layer 144 is positioned above the first oxide layer
142. After a planarization process, the second oxide layer 144
generally conforms to a surface of the substrate 101. Then, a
passivation layer 154 is formed above the oxide layer 140 for
protecting the underlying circuitry. The passivation layer 154
defines one or more openings for depositing one or more bond pads
155.
[0033] FIG. 2A shows a flow chart of a process 200 for fabricating
an integrated fluxgate circuit according to an aspect of the
present disclosure. The process 200 may begin at step 210, which
includes forming a circuit (e.g., the circuit 110) with active
regions (e.g., active regions 105 and 106) developed on a substrate
(e.g., the substrate 101). Step 210 also includes forming a metal
layer (e.g., the interconnect wiring layers 108 and the top
interconnect layer 109) that positioned above the active regions
for interconnecting the transistors (e.g., the PMOS 103 and the
NMOS 104) formed thereunder.
[0034] Step 212 includes forming bottom coil members (e.g., the
bottom coil members 125) above the metal layer. Step 214 includes
forming an edge stop layer (e.g., the second edge stop layer 153)
above the metal layer. Step 216 includes forming a seed layer on
the edge stop layer. FIG. 3A shows a cross sectional view of an
integrated fluxgate device (e.g., 120) when step 216 is performed.
A seed layer deposition 310 is performed using a target material to
form a seed layer 312. In one implementation, the seed layer
deposition 310 includes a physical vapor deposition, which can be
plasma-enhanced (i.e., PEPVD), using titanium as a target material.
Consequently, a titanium (Ti) seed layer 312 is formed on the
second etch stop layer 153, and the seed layer 312 may incur a
thickness of 300 .ANG.. The Ti seed layer 312 is a first titanium
layer, which is preserved from being etching until after the second
titanium layer is formed (see, e.g., FIGS. 3B-3E).
[0035] Next, the process 200 proceeds to step 218, which includes
forming a core structure (e.g., the magnetic core structure 130) on
the seed layer 312 and above the metal layer (e.g., the
interconnect wiring layers 108 and the top interconnect layer 109).
FIGS. 3B-3C shows cross sectional views of an integrated fluxgate
device (e.g., 120) when step 218 is performed. Referring to FIG.
3B, a magnetic core deposition process 320 is performed to deposit
interleaving magnetic layers and insulation layers. The magnetic
core deposition process 320 includes the physical vapor deposition
of the magnetic layers (e.g., 132) alternating with the chemical
vapor deposition of the insulation layers (e.g., 133). Each
magnetic layer may include a nickel iron alloy with a weight ratio
of about 82% nickel to 18% iron and an average thickness of 3,350
.ANG.. Though other weight ratios can be used, this particular
weight ratio provides high permeability and high sensitivity, and
it also lowers the saturation magnetization and operating current
of the fluxgate device (e.g., 120). Moreover, this particular
weight ratio may lower coercivity and magnetostriction, which leads
to a lower noise figure. Each insulation layer may include an
aluminum nitride compound with an average thickness of 70 .ANG..
The insulation layers provide lamination to the magnetic layers.
This lamination feature prevents degradation of magnetic properties
with increasing thickness of the core structure. Moreover, this
lamination feature reduces eddy current loss during operation. The
physical vapor deposition and the chemical vapor deposition can be
plasma-enhanced in one implementation. As a result of the magnetic
core deposition process 320, a magnetic core layer 322 is
formed.
[0036] Referring to FIG. 3C, a magnetic core patterning process 330
is performed to refine the horizontal (or planar) dimensions of a
magnetic core structure 130, such that the magnetic core structure
is positioned within the magnetic core region 170. As a result of a
photolithography process, a photoresist mask 332 is formed on the
magnetic core layer 322 overlapping the magnetic core region 170.
The magnetic core patterning process 330 includes etching away a
portion of the magnetic core layer 322 that is not protected under
the photoresist mask 332. As a result of the etching, the magnetic
core structure 130 is formed. In one implementation, for instance,
the etching process can be a wet etch using diluted acid, such as
phosphoric acid, citric acid, and/or nitric acid. The wet etch is
isotropic and selective. As such, the wet etch can be stopped at
the titanium seed layer 312.
[0037] After the magnetic core structure 130 is formed, step 218
includes an ashing process 335 to remove the photoresist mask 332
as shown in FIG. 3D. The ashing process 335 may introduce hot
oxygen into the process chamber. As such, a titanium oxide (TiO)
layer 160 is formed directly on top of the titanium (Ti) seed layer
(i.e., the first Ti layer) 312. The Ti seed layer 312 is preserved
from being etched during the magnetic core patterning process 330
and the ashing process 335.
[0038] Next, the process 200 proceeds to step 220, which includes
forming a first encapsulation layer (e.g., 136) covering the core
structure (e.g., 130). FIGS. 3E-3F shows cross sectional views of
an integrated fluxgate device (e.g., 120) when step 220 is
performed. According to an aspect of the present disclosure, step
220 may be implemented by a process 240 as shown in FIG. 2C and
consistent with the illustrations of FIGS. 3E-3F. The process 240
begins at step 242, which involves forming a second titanium layer
342 as shown in FIG. 3E. During step 242, a titanium deposition 340
is performed to deposit the second titanium layer 342, which forms
the top portion of the first encapsulation layer (e.g., 136). In
one implementation, the titanium deposition 340 includes a physical
vapor deposition, which can be plasma-enhanced (i.e., PEPVD), using
titanium as a target material. The second titanium layer 342 may
incur a thickness of 1,350 .ANG.. Having a titanium oxide layer 160
formed in between, the second titanium layer 342 bonds with the
first titanium layer (i.e., the seed layer) 312 to form the first
encapsulation layer (e.g., 136). More specifically, the second
titanium layer 342 includes a first portion and a second portion.
The first portion encapsulates the magnetic core structure 130 with
the first titanium layer 312. The second portion interfaces with
the first titanium layer 312 beyond the magnetic core region
170.
[0039] Upon completing step 241, the process 240 proceeds to step
244, which involves forming a mask over a magnetic core region.
Referring to FIG. 3F, a mask 352 is formed over the magnetic core
region 170 and on top of the second titanium layer 342. The mask
352 can be a photoresist mask that includes carbon-based materials.
After the mask 352 is formed, the process 240 proceeds to step 246,
which involves etching the first and second titanium layers exposed
by the mask using a titanium etchant and a titanium oxide etchant.
Referring again to FIG. 3F, an etching process 350 is performed to
refine the horizontal (or planar) dimensions of first encapsulation
layer 136.
[0040] According to an aspect of the present disclosure, the
etching process 350 can be a dry etch using plasmas formed by a
titanium etchant and a titanium oxide etchant. For example, the
etching process 350 can be a reactive ion etching (ME) performed
inside of an RIE chamber. The etching process 350 removes a stack
of titanium based metal and metal oxide (i.e., a Ti--TiO--Ti stack)
around the bottom corner edges of the first encapsulation layer 136
and outside of the magnetic core region 170. To prevent corrosion
of the magnetic core structure 130 and delamination of the
Ti--TiO--Ti stack, the etching process 350 is performed with a high
etch rate and in a uniform manner. Conventional titanium etchants
may be used for etching the titanium oxide layer 160, though the
etch rate of these conventional titanium etchant is generally lower
when they are applied to titanium oxide material than when they are
applied to titanium material. Thus, conventional titanium etchants
may introduced uneven etching across the Ti--TiO--Ti stack, and
they may also lower the overall etch rate.
[0041] The etching process 350 deploys both a titanium etchant and
a titanium oxide etchant to promote uniform etching, which can be
performed at a high etch rate. The titanium etchant includes a
first compound that removes titanium at a high rate. In one
implementation, for example, the titanium etchant may also include
a chlorine (Cl.sub.2) gas to form a Cl.sub.2 plasma 356. The
titanium etchant also includes a second compound that remove
titanium while forming a protection sidewall with the mask 352. The
protection sidewall helps prevent corrosion of the magnetic core
structure 130. In one implementation, for example, the titanium
etchant may include a boron trichloride (BCL.sub.3) gas to form a
BCL.sub.3 plasma 357. During the etching process 350, the boron
particles in the BCL.sub.3 plasma 357 form a boron-carbon polymer
(BCP) sidewall 354 laterally surrounding the exterior of the
magnetic core structure 130. The BCP sidewall 354 protects the
first encapsulation layer 136 and the magnetic core structure 130
from lateral etching. More specifically, the BCP sidewall 354
protects the first portion (i.e., within the magnetic core region
170) of the second titanium layer 342, while the second portion
(i.e., outside of the magnetic core region 170) of the second
titanium layer 342 is etched.
[0042] The etching process 350 adopts a titanium etchant ratio of
the BCL.sub.3 plasma 357 to the Cl.sub.2 plasma 356 in order to
promote uniform etching and preserve the integrity of the magnetic
core structure 130 and the first encapsulation layer 136. In one
implementation, for example, the titanium etchant ratio ranges from
two-third (2/3) to two (2). In another implementation, for example,
the titanium etchant ratio is equal to or greater than two (2). The
titanium etchant ratio may be implemented by controlling the inflow
of a BCL.sub.3 gas at 70 standard cubic centimeters per minute
(sccm) and the inflow of a Cl.sub.2 gas at 35 sccm. The
70-sccm-BCL.sub.3 to 35-sccm-CL.sub.2 gas inflow ratio can be
modified by a fraction (e.g., 14 sccm to 7 sccm) or a multiplier
(e.g., 140 sccm to 70 sccm) depending on the conditions of the
etching process 350.
[0043] The disclosed ranges of the titanium etchant ratio allow the
bias voltage (V.sub.BIAS) of the etching process 350 to be lowered
in order to reduce the amount of physical etching of the
Ti--TiO--Ti stack. In general, the bias voltage may be applied to
the wafer embodying the integrated fluxgate circuit 100. The bias
voltage promotes ion bombardments onto the wafer surface, thereby
facilitating the physical etching of the Ti--TiO--Ti stack.
Moreover, the physical etching may extend to the etch stop layer
153 because unlike chemical etching, physical etching is
non-selective. The etching process 350 is generally end point
driven and based on a detection of a chemical released from the
etch stop layer 153. The etching of the etch stop layer 153 may be
premature where there are portions of the Ti--TiO--Ti stack
remained unetched. Moreover, premature etching of the etch stop
layer 153 may deprive further processes from relying on an etch
stop layer 153 having a sufficient thickness to protect the
underlying circuit 110 (as shown in FIG. 1). By reducing the amount
of physical etching, the etching process 350 can maintain a
relatively high chemical etch rate of the Ti--TiO--Ti stack while
preventing (A) the underlying etch stop layer 153 from being
over-etched and (B) the premature detection of an etch-stop end
point.
[0044] Moreover, by reducing the amount of physical etching, the
etching process 350 may be performed more uniformly and gently
across the Ti--TiO--Ti stack. Advantageously, a uniform and gentle
etching of the Ti--TiO--Ti stack prevents the delamination of the
first encapsulation layer 136, which in turn protects the integrity
of the magnetic core structure 130. The titanium oxide etchant can
be used to compensate the reduction of physical etching. The
titanium oxide etchant also supplements the titanium etchants
(e.g., the Cl.sub.2 plasma 356 and the BCL.sub.3 plasma 357) in
enhancing the etch rate of the titanium oxide layer 160. In one
implementation, for example, the titanium oxide etchant may include
a trifluoromethane (CHF.sub.3) gas to form a CHF.sub.3 plasma 358.
With the help of the titanium oxide etchant, the titanium oxide
layer 160 can be etched at about the same rate as the first and
second titanium layers 312 and 342. A relatively uniform etch rate
across the Ti--TiO--Ti stack allows the etched front of the
titanium oxide layer 160 to stay in close range with the first and
second titanium layers 312 and 314. Thus, a relatively uniform etch
rate across the Ti--TiO--Ti stack prevents any one of the stack
layers from delaminating.
[0045] Where the disclosed ranges of titanium etchant ratio is
applied and where the CHF.sub.3 plasma 358 is deployed, the bias
voltage (V.sub.BIAS) can be lowered from its typical range of
120V-150V. In one implementation, for example, the bias voltage can
be less than 120V. In another implementation, for example, the bias
voltage can be less than 100V. In yet another implementation, for
example, the bias voltage can be 75V.
[0046] Referring again to FIG. 2C, step 248 may be performed after
the commencement of, or concurrent with, step 246. Step 248
involves monitoring a gaseous concentration associated with the
etch stop layer (e.g., 153). The monitoring can be performed
continuously or periodically. In an implementation where the etch
stop layer 153 includes a nitride material, step 248 can be
performed by monitoring a nitride wavelength associated with the
etching of the etch stop layer 153. In step 250, a determination is
made regarding whether an etch-stop end point is detected based on
the monitoring result of step 248. The etch-stop end point is
reached when the gaseous concentration reaches a predetermined
threshold. If the etch-stop end point is not detected, the process
240 may continuously perform step 246 and step 248. If the
etch-stop end point is detected, the process 240 will proceed to
step 252, which involves terminating the process 240. This also
concludes step 220 of the process 200, the end result of which is
illustrated in FIG. 3F. Subsequently, the mask 352 is removed by
ashing with an oxygen gas, which helps prevent the delamination of
the magnetic core structure 130.
[0047] Upon completing the formation of the first encapsulation
layer 136, the process 200 proceeds to step 221, which includes
performing field annealing of the core magnetic structure 130.
During the field annealing process, the core magnetic structure 130
is placed under a permanent magnet at around 370.degree. C. and for
about 60 minutes. The permanent magnet is of substantial weight
(e.g., 4 tons) such that the field annealing process may help
improve the magnetic alignment process to achieve better uniformity
across the wafer on which the integrated fluxgate circuit 100 is
formed.
[0048] Next, the process 200 proceeds to step 222, which includes
forming a second encapsulation layer (e.g., 138) covering the first
encapsulation layer (e.g., 136) and over the core structure (e.g.,
130). FIG. 3G shows a cross sectional view of an integrated
fluxgate device (e.g., 120) when step 222 is performed. A second
encapsulation layer deposition 360 is performed to deposit the
second encapsulation layer 138. In one implementation, the second
encapsulation layer deposition 360 includes using a chemical vapor
deposition (CVD) tool, which can be plasma-enhanced (i.e., PECVD).
The deposition 360 is performed in a chamber at a first CVD
temperature around 400.degree. C. and using silane (SiH.sub.4) and
nitrogen (N) as precursors. After a first deposition duration, the
second encapsulation layer 138 includes a silicon nitride (SiN)
material, which may have a thickness of 4,700 .ANG.. Although the
second encapsulation layer 138 can be further developed to have a
greater thickness, it is advantageous to refrain from doing so in
some cases. This is because depositing a silicon nitride layer is
generally costly and difficult to control. And a prolonged silicon
nitride deposition can produce more polymer byproducts that may
impact the functionality of the fluxgate device 120. During the
deposition 360, the second encapsulation layer 138 may bond with
the second etch stop layer 153 to form a single encapsulation
structure for insulating and protecting the magnetic core structure
130 inside of the first encapsulation layer 136.
[0049] After the second encapsulation layer deposition 360 is
performed, the wafer containing the integrated fluxgate circuit 100
is transferred to another chamber while the CVD tool is being
prepared for oxide deposition. To minimize the thermal stress
asserted between the first and second encapsulation layers 136 and
138, or asserted by the magnetic core structure 130, the wafer may
be kept near the first CVD temperature before the oxide layer
(e.g., 140) is deposited. Thus, the wafer may be kept at a pre-CVD
temperature that is not substantially below the first CVD
temperature. In one implementation, for example, the pre-CVD
temperature may be maintained at no lower than 250.degree. C. where
the first CVD temperature is at around 400.degree. C.
[0050] In step 224, an oxide layer (e.g., 142 and/or 144) is formed
above the second encapsulation layer 138 so as to mitigate a
thermal stress between the first and second encapsulation layers
136 and 138. According to an aspect of the disclosure, the oxide
layer has an oxide thickness (e.g., 143, or 143 in combination with
145) that is sufficient to mitigate a thermal stress between the
first and second encapsulation layers 136 and 138. The oxide layer
can be deposited using the same CVD tool as the second
encapsulation layer 138 and with a silane (SiH.sub.4) precursor.
The oxide layer deposition can be performed at the first CVD
temperature or at a second CVD temperature that is near to the
first CVD temperature. As an example, where the first CVD
temperature is approximately 400.degree. C. (i.e., plus or minus
10.degree. C.), the second CVD temperature can be approximately
350.degree. C. (i.e., plus or minus 10.degree. C.).
[0051] Although the oxide layer 140 may have a greater thickness
than the second encapsulation layer 138, it may be beneficial to
pursue only a minimum oxide thickness (e.g., 143) during a first
oxide layer deposition process in which the same CVD tool is used
as in the second encapsulation layer deposition 360. Because a
second oxide thickness 145 can be developed during a subsequent
deposition process. Delaying the second oxide deposition (i.e., the
subsequent CVD process) allows the overall fabrication process to
be streamlined.
[0052] To that end, the process durations for forming the second
encapsulation layer 138 and the first oxide layer 142 can be
substantially equal to each other. Alternatively, the process
duration for forming the second encapsulation layer 138 can be
greater than the process duration for forming the first oxide layer
142. In either case, this back-to-back deposition process prevents
substantial cooling of the second encapsulation layer 138 while
allowing the minimum oxide thickness 143 to be developed. This
process arrangement may lead to a relatively similar distribution
of thickness between the second encapsulation layer 138 and a first
oxide layer 142.
[0053] Thus, step 224 may be performed to deposit a single layer of
oxide during one deposition process or multiple layers of oxide
during multiple deposition processes. For the second scenario, step
224 may be implemented according to a process 230 as shown in FIG.
2B. The process 230 starts at step 232, which includes forming a
first silicon oxide layer 142 with a silane precursor subsequent to
the forming of the second encapsulation layer 138. FIG. 3H, shows a
cross sectional view of an integrated fluxgate device (e.g., 120)
when step 232 is performed. A first oxide layer deposition 370 is
performed to deposit a first oxide layer 142. In one
implementation, the first oxide layer deposition 370 includes using
the same chemical vapor deposition (CVD) tool as the second
encapsulation layer deposition 360, which can be plasma-enhanced
(i.e., PECVD). The deposition 370 is performed in a chamber at a
second CVD temperature, which can be the same or is near to the
first CVD temperature. For example, where the first CVD temperature
is around 400.degree. C. (i.e., plus or minus 10.degree. C.), the
second CVD temperature can be about 350.degree. C. (i.e., plus or
minus 10.degree. C.) or higher.
[0054] The deposition 370 applies silane (SiH.sub.4) and oxygen (O)
as precursors. The first oxide layer 142 thus includes a silicon
oxide material with a minimum oxide thickness 143. The second
deposition duration of the first oxide layer 142 may be
substantially the same as, or less than, the first deposition
duration of the second encapsulation layer deposition 360. Because
silicon oxide formed by a silane precursor typically has good
uniformity, the first silicon oxide layer 142 conforms to a contour
of the magnetic core structure 130. According to an aspect of the
disclosure, the minimum oxide thickness 143 can be 4,000 .ANG.
where the second encapsulation layer 138 has a thickness of about
4,700 .ANG.. Although the deposition 370 may further develop the
silicon oxide layer to a greater thickness, it is advantageous to
refrain from doing so in some cases. This is because the second
encapsulation layer deposition 360 as shown in FIG. 3G uses the
same deposition tool as the first oxide layer deposition 370. By
delaying the silicon oxide growth to a later time, the overall
fabrication process can be streamlined as the depositions 360 and
370 can take turn sharing the same deposition tool to prevent
substantial cooling of the deposited layers (i.e., 130, 136, and
138). Advantageously, the arrangement of the depositions 360 and
370 allows the integrated fluxgate circuit 100 to be substantially
crack-free around the corners of the magnetic core structure
130.
[0055] In an alternative implementation, a tetraethyl orthosilicate
(TEOS) precursor can be used in the deposition 370 for forming the
first oxide layer 142. However, silicon oxide layers formed by TEOS
precursors typically have lower uniformity than those formed by
silane precursors. Hence, the TEOS-based silicon oxide layer may or
may not conform to the contour of the magnetic core structure 130.
In the event that the TEOS-based silicon oxide layer does not
conform well to the contour of the magnetic core structure 130, the
TEOS-based silicon oxide layer may be less effective in performing
its stress relief function. Accordingly, it may be more preferable
to use TEOS-based silicon oxide to grow on top of the silane-based
silicon oxide.
[0056] After step 232 is performed, the process 230 proceeds to
step 234, which includes forming a second silicon oxide layer 144
with a tetraethyl orthosilicate (TEOS) precursor subsequent to the
forming of the first silicon oxide layer 142. Since the first
silicon oxide layer 142 is already in place to serve as a stress
relief structure, the integrated fluxgate circuit 100 may undergo
substantial cooling without sustaining any crack at the corners of
the magnetic core structure 130. FIG. 3I, shows a cross sectional
view of an integrated fluxgate device (e.g., 120) when step 234 is
performed. A second oxide layer deposition 380 is performed to
deposit a second oxide layer 144. In one implementation, the second
oxide layer deposition 380 includes using the same chemical vapor
deposition (CVD) tool as the second encapsulation layer deposition
360, which can be plasma-enhanced (i.e., PECVD). In another
implementation, the second oxide layer deposition 380 includes
using a different CVD tool, which can also be plasma-enhanced. The
deposition 380 applies a TEOS precursor, such that the second oxide
layer 144 may or may not conform to the contour of the magnetic
core structure 130. To prepare for further fabrication processes,
the second oxide layer 144 is planarized to have a top surface that
conforms to the surface of the substrate 107.
[0057] In an alternative process flow where multiple depositional
tools are available, the oxide deposition of one wafer can be
performed concurrently with the second encapsulation layer
deposition 360 of a different wafer. The oxide deposition may take
a longer duration than the second encapsulation layer deposition
360. This allows a single oxide layer 140 to be formed above the
second encapsulation layer 138. Referring to FIG. 3J, a cross
sectional view of an integrated fluxgate device (e.g., 120) is
shown according to a process in which step 224 is performed to form
a single oxide layer 140. A single oxide layer deposition 390 is
performed to deposit a single oxide layer 140. In one
implementation, the oxide layer deposition 390 includes using a
chemical vapor deposition (CVD) tool, which can be plasma-enhanced
(i.e., PECVD). The deposition 390 is performed in a chamber at a
second CVD temperature, which can be the same or is near to the
first CVD temperature. For example, where the first CVD temperature
is around 400.degree. C. (i.e., plus or minus 10.degree. C.), the
second CVD temperature can be about 350.degree. C. (i.e., plus or
minus 10.degree. C.) or higher.
[0058] The deposition 390 applies silane (SiH.sub.4) and oxygen (O)
as precursors. The oxide layer 140 thus includes a silicon oxide
material with a single oxide thickness that is greater than the
minimum oxide thickness 143. In one implementation, the single
oxide thickness can be the sum of the first oxide thickness 143 and
the second oxide thickness 145 as shown in FIG. 1. For instance,
the single oxide thickness can be greater than 4,000 .ANG. where
the second encapsulation layer 138 has a thickness of about 4,700
.ANG.. Because silicon oxide formed by a silane precursor typically
has good uniformity, the single silicon oxide layer 140 conforms to
a contour of the magnetic core structure 130 after it is formed.
Like the second oxide layer 144 as shown in FIG. 3I however, a
planarization process can be performed to planarize the top surface
of the single oxide layer 140. As such, the top surface of the
planarized single oxide layer 140 conforms to the surface of the
substrate 107.
[0059] After step 224 is performed, the process 200 proceeds to
step 226, which includes forming top coil members (e.g., top coil
members 126) above the second encapsulation layer 138 and in the
oxide layer 140.
[0060] Consistent with the present disclosure, the term "configured
to" purports to describe the structural and functional
characteristics of one or more tangible non-transitory components.
For example, the term "configured to" can be understood as having a
particular configuration that is designed or dedicated for
performing a certain function. Within this understanding, a device
is "configured to" perform a certain function if such a device
includes tangible non-transitory components that can be enabled,
activated, or powered to perform that certain function. While the
term "configured to" may encompass the notion of being
configurable, this term should not be limited to such a narrow
definition. Thus, when used for describing a device, the term
"configured to" does not require the described device to be
configurable at any given point of time.
[0061] Moreover, the term "exemplary" is used herein to mean
serving as an example, instance, illustration, etc., and not
necessarily as advantageous. Also, although the disclosure has been
shown and described with respect to one or more implementations,
equivalent alterations and modifications will be apparent upon a
reading and understanding of this specification and the annexed
drawings. The disclosure comprises all such modifications and
alterations and is limited only by the scope of the following
claims. In particular regard to the various functions performed by
the above described components (e.g., elements, resources, etc.),
the terms used to describe such components are intended to
correspond, unless otherwise indicated, to any component which
performs the specified function of the described component (e.g.,
that is functionally equivalent), even though not structurally
equivalent to the disclosed structure. In addition, while a
particular feature of the disclosure may have been disclosed with
respect to only one of several implementations, such feature may be
combined with one or more other features of the other
implementations as may be desired and advantageous for any given or
particular application
[0062] While this specification contains many specifics, these
should not be construed as limitations on the scope of what may be
claimed, but rather as descriptions of features that may be
specific to particular embodiments. Certain features that are
described in this specification in the context of separate
embodiments can also be implemented in combination in a single
embodiment. Conversely, various features that are described in the
context of a single embodiment can also be implemented in multiple
embodiments separately or in any suitable subcombination. Moreover,
although features may be described above as acting in certain
combinations and even initially claimed as such, one or more
features from a claimed combination can in some cases be excised
from the combination, and the claimed combination may be directed
to a subcombination or variation of a subcombination.
[0063] Similarly, while operations are depicted in the drawings in
a particular order, this should not be understood as requiring that
such operations be performed in the particular order shown or in
sequential order, or that all illustrated operations be performed,
to achieve desirable results unless such order is recited in one or
more claims. In certain circumstances, multitasking and parallel
processing may be advantageous. Moreover, the separation of various
system components in the embodiments described above should not be
understood as requiring such separation in all embodiments.
* * * * *