U.S. patent application number 14/731764 was filed with the patent office on 2017-09-14 for semiconductor devices and methods of manufacturing the same.
The applicant listed for this patent is SAMSUNG ELECTRONICS CO., LTD.. Invention is credited to JUN-HO KIM, HYUK-JOON KWON, JUNG-HA OH, HAN-SIK YOO.
Application Number | 20170263610 14/731764 |
Document ID | / |
Family ID | 55652120 |
Filed Date | 2017-09-14 |
United States Patent
Application |
20170263610 |
Kind Code |
A9 |
YOO; HAN-SIK ; et
al. |
September 14, 2017 |
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Abstract
A semiconductor device includes a substrate, a memory structure
and a capacitor structure including at least one array of
capacitors. The memory structure is disposed in a first region of
the device. The capacitor structure is disposed in a second region
of the device. The capacitor structure may include a first
capacitor array, a second capacitor array, a third capacitor array
and a first landing pad. The first landing pad is disposed between
the substrate and lower electrodes of capacitors of the first and
second capacitor arrays, and contacts the lower electrodes so as to
electrically connect the first capacitor array and the second
capacitor array. Upper electrodes of capacitors of the second and
third capacitor arrays are integral such that the second capacitor
array and the third capacitor array are electrically connected to
each other.
Inventors: |
YOO; HAN-SIK; (SEOUL,
KR) ; KWON; HYUK-JOON; (YONGIN-SI, KR) ; OH;
JUNG-HA; (GWACHEON-SI, KR) ; KIM; JUN-HO;
(SEOUL, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG ELECTRONICS CO., LTD. |
SUWON-SI |
|
KR |
|
|
Prior
Publication: |
|
Document Identifier |
Publication Date |
|
US 20150364474 A1 |
December 17, 2015 |
|
|
Family ID: |
55652120 |
Appl. No.: |
14/731764 |
Filed: |
June 5, 2015 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 29/4220130101; G11C
29/52 20130101; G11C 11/5635 20130101; G11C 11/5671 20130101; G11C
16/0466 20130101; H01L 2924/0002 20130101; H01L 2924/00 20130101;
G06F 11/1048 20130101; H01L 23/528 20130101; H01L 27/10814
20130101; H01L 27/11582 20130101; H01L 28/40 20130101; H01L
27/10823 20130101; G11C 2029/0411 20130101; H01L 2924/0002
20130101 |
International
Class: |
H01L 27/108 20060101
H01L027/108; H01L 23/528 20060101 H01L023/528; H01L 49/02 20060101
H01L049/02 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 23, 2014 |
KR |
10-2014-0126981 |
Claims
1. A semiconductor device, comprising: a substrate spanning a first
region and a second region of the device; a memory structure
disposed in the first region; and a capacitor structure disposed in
the second region, wherein the capacitor structure comprises: a
first capacitor array of a plurality of first capacitors each
having a lower electrode, a dielectric layer pattern and an upper
electrode; a second capacitor array of a plurality of second
capacitors each having a lower electrode, a dielectric layer
pattern and an upper electrode; a third capacitor array of a
plurality of third capacitors each having a lower electrode, a
dielectric layer pattern and an upper electrode; and a first
landing pad interposed between the substrate and the lower
electrodes of the first and second capacitors, contacting the lower
electrodes of each of the first and second capacitors, and
electrically connecting the first capacitors and the second
capacitors to one another, and wherein the upper electrodes of the
second and third capacitors are integral such that the second
capacitors and the third capacitors are electrically connected to
each other.
2. The semiconductor device of claim 1, further comprising a first
insulating interlayer interposed between the substrate and the
first landing pad, wherein an upper surface of the first insulating
interlayer is uninterrupted beneath the entirety of the first
landing pad such that the first insulating interlayer electrically
isolates the first landing pad from any conductive element or
material disposed under the first landing pad.
3. The semiconductor device of claim 1, further comprising a second
landing pad interposed between the substrate and the lower
electrodes of the third capacitors, wherein the second landing pad
contacts the lower electrode of each of the third capacitors.
4. The semiconductor device of claim 3, further comprising: a
second insulating interlayer covering the first upper electrode,
the second upper electrode and the third upper electrode; first
wiring disposed on the second insulating interlayer; second wiring
disposed on the second insulating interlayer, the second wiring
being spaced apart from the first wiring; a first contact extending
through the second insulating interlayer, the first contact
contacting the upper electrode of one of the first capacitors and
the first wiring; and a second contact extending through the second
insulating interlayer, the second contact contacting the second
landing pad and the second wiring.
5. The semiconductor device of claim 4, wherein the first capacitor
array, the second capacitor array and the third capacitor array are
spaced apart from each other in a first direction parallel to a top
surface of the substrate, and wherein the first wiring and the
second wiring comprises linear segments of wire each extending
longitudinally in the first direction.
6. The semiconductor device of claim 3, further comprising a fourth
capacitor array of a plurality of fourth capacitors each having a
lower electrode, a dielectric layer pattern and an upper electrode,
wherein the second and third capacitor arrays are interposed
between the first and second capacitor arrays, and wherein the
second landing pad is interposed between the substrate and the
lower electrodes of the third and fourth capacitors, contacts the
lower electrodes of the third and fourth capacitors, and
electrically connects the third capacitors and the fourth
capacitors to one another.
7. The semiconductor device of claim 6, further comprising: a
second insulating interlayer covering the first upper electrode,
the second upper electrode, the third upper electrode and the
fourth upper electrode; a first wiring disposed on the second
insulating interlayer; a second wiring disposed on the second
insulating interlayer, the second wiring being spaced apart from
the first wiring; a first contact extending through the second
insulating interlayer, the first contact contacting the upper
electrode of one of the first capacitors and the first wiring; and
a second contact extending through the second insulating
interlayer, the second contact contacting the upper electrode of
one of said fourth capacitors and the second wiring.
8. The semiconductor device of claim 3, further comprising a fourth
capacitor array of a plurality of fourth capacitors each having a
lower electrode, a dielectric layer pattern and an upper electrode,
wherein the first and second capacitor arrays are interposed
between the third and fourth capacitor arrays, and wherein the
upper electrodes of the fourth capacitors and the upper electrodes
of the first capacitors are integral such that the capacitors of
the fourth capacitor array are electrically connected to the
capacitors of the third capacitor array.
9. The semiconductor device of claim 8, further comprising: a third
landing pad interposed between the substrate and the lower
electrodes of the fourth capacitors, the third landing pad
contacting the lower electrodes of each of the fourth capacitors; a
second insulating interlayer covering the upper electrodes of the
capacitors of the first, second, third and fourth capacitor arrays;
a first wiring disposed on the second insulating interlayer; a
second wiring disposed on the second insulating interlayer, the
second wiring being spaced apart from the first wiring; a first
contact extending through the second insulating interlayer, the
first contact contacting the second landing pad and the first
wiring; and a second contact extending through the second
insulating interlayer, the second contact contacting the third
landing pad and the second wiring.
10. The semiconductor device of claim 1, wherein the memory
structure comprises: a transistor; a landing pad electrically
connected to the transistor; and a capacitor disposed on the
landing pad of the memory structure, the capacitor of the memory
structure including a lower electrode, a dielectric layer pattern
and an upper electrode.
11. The semiconductor device of claim 10, wherein the landing pad
of the memory structure and the first landing pad are disposed at
the same level in the device and comprise the same material.
12. The semiconductor device of claim 1, wherein the first
capacitors are arrayed in a first direction parallel to a top
surface of the substrate and a second direction perpendicular to
the first direction, wherein the second capacitors are arrayed in
the first direction and the second direction, and wherein the third
capacitors are arrayed in the first direction and the second
direction.
13. A semiconductor device, comprising: a substrate spanning a
first region and a second region of the device; a memory structure
disposed in the first region; and a capacitor structure disposed in
the second region, wherein the capacitor structure comprises: a
first capacitor array of a plurality of first capacitors each
having a lower electrode, a dielectric layer pattern and an upper
electrode; a second capacitor array of a plurality of second
capacitors each having a lower electrode, a dielectric layer
pattern and an upper electrode; and a first landing pad interposed
between the substrate and the lower electrodes of the first and
second capacitors, contacting the lower electrodes of the first and
second capacitors, and electrically connecting the first capacitors
array and the second capacitors to one another.
14. The semiconductor device of claim 13, further comprising: an
insulating interlayer covering the upper electrodes of the first
and second capacitors; a first wiring disposed on the insulating
interlayer, the first wiring comprising a linear segment of
conductive material extending longitudinally in a first direction
parallel to a top surface of the substrate; a second wiring
disposed on the insulating interlayer, the second wiring being
spaced apart from the first wiring in the first direction and
comprising a linear segment of conductive material extending
longitudinally in the first direction; a first contact extending
through the insulating interlayer, and contacting the first upper
electrode and the first wiring; and a second contact extending
through the insulating interlayer, and contacting the second upper
electrode and the second wiring.
15. A semiconductor device, comprising: a substrate spanning a
first region and a second region of the device; a first interlayer
insulating layer disposed in the substrate and spanning the first
and second regions of the device a memory structure, including at
least one memory element, disposed in the first region; and a
capacitor structure disposed in the second region, and wherein the
capacitor structure comprises: an array of capacitors each
extending vertically in the interlayer insulating layer in the
second region, the capacitors having discrete lower electrodes,
respectively, a common upper electrode, and discrete dielectric
layer patterns each interposed between a respective one of the
lower electrodes and the common upper electrode, a pad of
electrically conductive material interposed between the substrate
and the lower electrodes of the capacitors of the array, and
contacting the lower electrodes of the capacitors, a second
interlayer insulating layer disposed on the first interlayer
insulating layer, first and second wirings disposed on the second
interlayer insulating layer, and first and second contacts
extending from the first and second wirings, respectively, into the
second interlayer insulating layer, wherein the common upper
electrode of the capacitors comprises vertical columns of
electrically conductive material each surrounded by a respective
one of the dielectric layer patterns, and a layer of conductive
material extending on an upper surface of the interlayer insulating
layer and connecting the vertical columns of electrically
conductive material to one another, the first contact is
electrically connected to the capacitor array at the common upper
electrode, and the second contact is electrically connected to the
capacitor array at the lower electrodes via the landing pad.
16. The semiconductor device of claim 15, wherein the array of
capacitors constitutes a first capacitor array, the pad of
electrically conductive material constitutes a first pad, and the
capacitor structure further comprises: second and third capacitor
arrays, the second capacitor array including second capacitors each
extending vertically in the interlayer insulating layer in the
second region, the second capacitors having discrete lower
electrodes, respectively, a common upper electrode, and discrete
dielectric layer patterns each interposed between a respective one
of the lower electrodes of the second capacitors and the common
upper electrode of the second capacitors, the third capacitor array
including third capacitors each extending vertically in the
interlayer insulating layer in the second region, the third
capacitors having discrete lower electrodes, respectively, a common
upper electrode, and discrete dielectric layer patterns each
interposed between a respective one of the lower electrodes of the
third capacitors and the common upper electrode of the third
capacitors, and a second pad of electrically conductive material
interposed between the substrate and the lower electrodes of the
third capacitors, contacting the lower electrodes of the third
capacitors, and spaced from the first pad, and wherein the first
pad is also interposed between the substrate and the lower
electrodes of the second capacitors, and contacts the lower
electrodes of the second capacitors, the common upper electrode of
the second capacitors comprises second vertical columns of
electrically conductive material each surrounded by a respective
one of the dielectric layer patterns, and a layer of conductive
material extending on an upper surface of the interlayer insulating
layer and connecting the second vertical columns of electrically
conductive material to one another, the common upper electrode of
the third capacitors comprises third vertical columns of
electrically conductive material each surrounded by a respective
one of the dielectric layer patterns, and a layer of conductive
material extending on an upper surface of the interlayer insulating
layer and connecting the third vertical columns of electrically
conductive material to one another, the layer of conductive
material of the common upper electrode of the second capacitors is
contiguous with the layer of conductive material of the common
upper electrode of the third capacitors, and the first contact
extends between the first wiring and the layer of conductive
material of the common upper electrode of the first capacitors, and
the second contact extends vertically in the first and second
interlayer insulating layers between the second wiring and the
second pad.
17. The semiconductor device of claim 15, wherein the array of
capacitors constitutes a first capacitor array, the pad of
electrically conductive material constitutes a first pad, and the
capacitor structure further comprises: second, third and fourth
capacitor arrays, the second capacitor array including second
capacitors each extending vertically in the interlayer insulating
layer in the second region, the second capacitors having discrete
lower electrodes, respectively, a common upper electrode, and
discrete dielectric layer patterns each interposed between a
respective one of the lower electrodes of the second capacitors and
the common upper electrode of the second capacitors, the third
capacitor array including third capacitors each extending
vertically in the interlayer insulating layer in the second region,
the third capacitors having discrete lower electrodes,
respectively, a common upper electrode, and discrete dielectric
layer patterns each interposed between a respective one of the
lower electrodes of the third capacitors and the common upper
electrode of the third capacitors, the fourth capacitor array
including fourth capacitors each extending vertically in the
interlayer insulating layer in the second region, the fourth
capacitors having discrete lower electrodes, respectively, a common
upper electrode, and discrete dielectric layer patterns each
interposed between a respective one of the lower electrodes of the
fourth capacitors and the common upper electrode of the fourth
capacitors, and a second pad of electrically conductive material
interposed between the substrate and the lower electrodes of the
third and fourth capacitors, contacting the lower electrodes of the
third and fourth capacitors, and spaced from the first pad, and
wherein the first pad is also interposed between the substrate and
the lower electrodes of the second capacitors, and contacts the
lower electrodes of the second capacitors, the common upper
electrode of the second capacitors comprises second vertical
columns of electrically conductive material each surrounded by a
respective one of the dielectric layer patterns, and a layer of
conductive material extending on an upper surface of the interlayer
insulating layer and connecting the second vertical columns of
electrically conductive material to one another, the common upper
electrode of the third capacitors comprises third vertical columns
of electrically conductive material each surrounded by a respective
one of the dielectric layer patterns, and a layer of conductive
material extending on an upper surface of the interlayer insulating
layer and connecting the third vertical columns of electrically
conductive material to one another, the common upper electrode of
the fourth capacitors comprises fourth vertical columns of
electrically conductive material each surrounded by a respective
one of the dielectric layer patterns, and a layer of conductive
material extending on an upper surface of the interlayer insulating
layer and connecting the fourth vertical columns of electrically
conductive material to one another, the layer of conductive
material of the common upper electrode of the second capacitors is
contiguous with the layer of conductive material of the common
upper electrode of the third capacitors, and the first contact
extends between the first wiring and the layer of conductive
material of the common upper electrode of the first capacitors, and
the second contact extends between the second wiring and the layer
of conductive material of the common upper electrode of the fourth
capacitors.
18. The semiconductor device of claim 15, wherein the array of
capacitors constitutes a first capacitor array, the pad of
electrically conductive material constitutes a first pad, and the
capacitor structure further comprises: second, third and fourth
capacitor arrays, the second capacitor array including second
capacitors each extending vertically in the interlayer insulating
layer in the second region, the second capacitors having discrete
lower electrodes, respectively, a common upper electrode, and
discrete dielectric layer patterns each interposed between a
respective one of the lower electrodes of the second capacitors and
the common upper electrode of the second capacitors, the third
capacitor array including third capacitors each extending
vertically in the interlayer insulating layer in the second region,
the third capacitors having discrete lower electrodes,
respectively, a common upper electrode, and discrete dielectric
layer patterns each interposed between a respective one of the
lower electrodes of the third capacitors and the common upper
electrode of the third capacitors, the fourth capacitor array
including fourth capacitors each extending vertically in the
interlayer insulating layer in the second region, the fourth
capacitors having discrete lower electrodes, respectively, a common
upper electrode, and discrete dielectric layer patterns each
interposed between a respective one of the lower electrodes of the
fourth capacitors and the common upper electrode of the fourth
capacitors, and a second pad of electrically conductive material
interposed between the substrate and the lower electrodes of the
second and third capacitors, contacting the lower electrodes of the
second and third capacitors, and spaced from the first pad in the
first direction, and a third pad of electrically conductive
material interposed between the substrate and the lower electrodes
of the fourth capacitors, contacting the lower electrodes of the
fourth capacitors, and spaced from the first and second pads, and
wherein the common upper electrode of the second capacitors
comprises second vertical columns of electrically conductive
material each surrounded by a respective one of the dielectric
layer patterns, and a layer of conductive material extending on an
upper surface of the interlayer insulating layer and connecting the
second vertical columns of electrically conductive material to one
another, the common upper electrode of the third capacitors
comprises third vertical columns of electrically conductive
material each surrounded by a respective one of the dielectric
layer patterns, and a layer of conductive material extending on an
upper surface of the interlayer insulating layer and connecting the
third vertical columns of electrically conductive material to one
another, the common upper electrode of the fourth capacitors
comprises fourth vertical columns of electrically conductive
material each surrounded by a respective one of the dielectric
layer patterns, and a layer of conductive material extending on an
upper surface of the interlayer insulating layer and connecting the
fourth vertical columns of electrically conductive material to one
another, the layer of conductive material of the common upper
electrode of the capacitors of the first capacitor array is
contiguous with the layer of conductive material of the common
upper electrode of the second capacitors, the layer of conductive
material of the common upper electrode of the capacitors of the
third capacitors is contiguous with the layer of conductive
material of the common upper electrode of the fourth capacitors,
the first contact extends vertically in the first and second
interlayer insulating layers between the first wiring and the first
pad, and the second contact extends vertically in the first and
second interlayer insulating layers between the second wiring and
the third pad.
19. The semiconductor device of claim 15, wherein the array of
capacitors constitutes a first capacitor array, the pad of
electrically conductive material constitutes a first pad, and the
capacitor structure further comprises: a second capacitor array
spaced from the first capacitor array in a first direction, the
second capacitor array including second capacitors each extending
vertically in the interlayer insulating layer in the second region,
the second capacitors having discrete lower electrodes,
respectively, a common upper electrode, and discrete dielectric
layer patterns each interposed between a respective one of the
lower electrodes of the second capacitors and the common upper
electrode of the second capacitors, and wherein the first pad is
also interposed between the substrate and the lower electrodes of
the second capacitors, and contacts the lower electrodes of the
second capacitors, the common upper electrode of the second
capacitors comprises second vertical columns of electrically
conductive material each surrounded by a respective one of the
dielectric layer patterns, and a layer of conductive material
extending on an upper surface of the interlayer insulating layer
and connecting the second vertical columns of electrically
conductive material to one another, the layer of conductive
material of the common upper electrode of the first capacitors is
spaced in the first direction from the layer of conductive material
of the common upper electrode of the second capacitors, the first
wiring and the second wiring comprise first and second linear
segments of conductive material, respectively, each extending
longitudinally in the first direction, the first contact is
elongated in the first direction and extends between the linear
segment of conductive material constituting the first wiring and
the layer of conductive material of the common upper electrode of
the first capacitors, and the second contact is elongated in the
first direction and extends between the linear segment of
conductive material constituting the second wiring and the layer of
conductive material of the common upper electrode of the second
capacitors.
20. The semiconductor device of claim 15, wherein the array of
capacitors constitutes a first capacitor array, the pad of
electrically conductive material constitutes a first pad, and the
capacitor structure further comprises: a second capacitor array,
the second capacitor array including second capacitors each
extending vertically in the interlayer insulating layer in the
second region, the second capacitors having discrete lower
electrodes, respectively, a common upper electrode, and discrete
dielectric layer patterns each interposed between a respective one
of the lower electrodes of the second capacitors and the common
upper electrode of the second capacitors, and a second pad of
electrically conductive material interposed between the substrate
and the lower electrodes of the second capacitors, contacting the
lower electrodes of the second capacitors, and spaced from the
first pad, and wherein the common upper electrode of the second
capacitors comprises second vertical columns of electrically
conductive material each surrounded by a respective one of the
dielectric layer patterns, and a layer of conductive material
extending on an upper surface of the interlayer insulating layer
and connecting the second vertical columns of electrically
conductive material to one another, the layer of conductive
material of the common upper electrode of the first capacitors is
contiguous with the layer of conductive material of the common
upper electrode of the second capacitors, and the first contact
extends vertically in the first and second interlayer insulating
layers between the first wiring and the first pad, and the second
contact extends vertically in the first and second interlayer
insulating layers between the second wiring and the second pad.
Description
PRIORITY STATEMENT
[0001] This application claims priority under 35 U.S.C .sctn.119 to
Korean Patent Application No. 10-2014-0126981 filed on Sep. 23,
2014 in the Korean Intellectual Property Office, the disclosure of
which is hereby incorporated by reference in its entirety.
BACKGROUND
[0002] 1. Field
[0003] Exemplary embodiments relate to semiconductor devices and
methods of manufacturing the same. More particularly, exemplary
embodiments relate to semiconductor devices including decoupling
capacitors and methods of manufacturing the same.
[0004] 2. Description of the Related Art
[0005] Recently, as semiconductor memory devices become more highly
integrated, their operation speed has also increased. Increasing
the clock frequency to increase the operation speed may also result
in increased signal noise between the power signals such as power
voltage Vdd and ground voltage Vss during a read operation and a
write operation. A capacitance is used as a noise filter to obviate
this problem.
SUMMARY
[0006] An exemplary embodiment of the present inventive concept is
a semiconductor device including a substrate spanning a first
region and a second region of the device, a memory structure
disposed in the first region, and a capacitor structure disposed in
the second region, and in which the capacitor structure comprises a
first capacitor array of a plurality of first capacitors each
having a lower electrode, a dielectric layer pattern and an upper
electrode, a second capacitor array of a plurality of second
capacitors each having a lower electrode, a dielectric layer
pattern and an upper electrode, a third capacitor array of a
plurality of third capacitors each having a lower electrode, a
dielectric layer pattern and an upper electrode; and a first
landing pad interposed between the substrate and the lower
electrodes of the first and second capacitors, contacting the lower
electrodes of each of the first and second capacitors, and
electrically connecting the first capacitors and the second
capacitors to one another, and in which the upper electrodes of the
second and third capacitors are integral such that the second
capacitors and the third capacitors are electrically connected to
each other.
[0007] Another exemplary embodiment of the present inventive
concept is a semiconductor device including a substrate spanning a
first region and a second region of the device, a memory structure
disposed in the first region, and a capacitor structure disposed in
the second region, and in which the capacitor structure comprises a
first capacitor array of a plurality of first capacitors each
having a lower electrode, a dielectric layer pattern and an upper
electrode, a second capacitor array of a plurality of second
capacitors each having a lower electrode, a dielectric layer
pattern and an upper electrode, and a first landing pad interposed
between the substrate and the lower electrodes of the first and
second capacitors, contacting the lower electrodes of the first and
second capacitors, and electrically connecting the first capacitors
array and the second capacitors to one another.
[0008] Another exemplary embodiment of the present inventive
concept is a semiconductor device including a substrate spanning a
first region and a second region of the device, a first interlayer
insulating layer disposed in the substrate and spanning the first
and second regions of the device, a memory structure comprising at
least one memory element disposed in the first region, and a
capacitor structure disposed in the second region, and in which the
capacitor structure comprises an array of capacitors each extending
vertically in the interlayer insulating layer in the second region,
the capacitors having discrete lower electrodes, respectively, a
common upper electrode, and discrete dielectric layer patterns each
interposed between a respective one of the lower electrodes and the
common upper electrode, a pad of electrically conductive material
interposed between the substrate and the lower electrodes of the
capacitors of the array, and contacting the lower electrodes of the
capacitors, a second interlayer insulating layer disposed on the
first interlayer insulating layer, first and second wirings
disposed on the second interlayer insulating layer, and first and
second contacts extending from the first and second wirings,
respectively, into the second interlayer insulating layer, and in
which the common upper electrode of the capacitors comprises
vertical columns of electrically conductive material each
surrounded by a respective one of the dielectric layer patterns,
and a layer of conductive material extending on an upper surface of
the interlayer insulating layer and connecting the vertical columns
of electrically conductive material to one another, the first
contact is electrically connected to the capacitor array at the
common upper electrode, and the second contact is electrically
connected to the capacitor array at the lower electrodes via the
landing pad.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] Exemplary embodiments will be more clearly understood from
the following detailed description taken in conjunction with the
accompanying drawings.
[0010] FIG. 1 is a plan view of a capacitor structure of a first
embodiment of a semiconductor device in accordance with the
inventive concept;
[0011] FIG. 2 illustrates the first embodiment of the semiconductor
device and comprises a cross-sectional view taken along line A-A'
of FIG. 1 and a cross-sectional view taken along a cell region of
the semiconductor device;
[0012] FIG. 3 is a circuit diagram of a capacitor structure of the
semiconductor device in accordance with the inventive concept;
[0013] FIGS. 4, 5, 6, 7, 8, 9, 10 and 11 are cross-sectional views
illustrating a method of manufacturing a semiconductor device in
accordance with some exemplary embodiments;
[0014] FIG. 12 is a plan view of a capacitor structure of a second
embodiment of a semiconductor device in accordance with the
inventive concept;
[0015] FIG. 13 illustrates the second embodiment of the
semiconductor device and comprises a cross-sectional view taken
along line A-A' of FIG. 12 and a cross-sectional view taken along a
cell region of the semiconductor device;
[0016] FIG. 14 is a plan view of a capacitor structure of a third
embodiment of a semiconductor device in accordance with the
inventive concept;
[0017] FIG. 15 illustrates the third embodiment of the
semiconductor device and comprises a cross-sectional view taken
along line A-A' of FIG. 14 and a cross-sectional view taken along a
cell region of the semiconductor device;
[0018] FIG. 16 is a plan view of a capacitor structure of a fourth
embodiment of a semiconductor device in accordance with the
inventive concept;
[0019] FIG. 17 illustrates the fourth embodiment of the
semiconductor device and comprises a cross-sectional view taken
along line A-A' of FIG. 16 and a cross-sectional view taken along a
cell region of the semiconductor device;
[0020] FIG. 18 is a plan view of an example of a semiconductor
device for use in comparison with the fourth embodiment;
[0021] FIG. 19 is a plan view of a capacitor structure of a fifth
embodiment of a semiconductor device in accordance with the
inventive concept;
[0022] FIG. 20 illustrates the fifth embodiment of the
semiconductor device and comprises a cross-sectional view taken
along line A-A' of FIG. 19 and a cross-sectional view taken along a
cell region of the semiconductor device;
[0023] FIG. 21 is a plan view of a capacitor structure of a sixth
embodiment of a semiconductor device in accordance with the
inventive concept;
[0024] FIG. 22 illustrates the sixth embodiment of the
semiconductor device and comprises a cross-sectional view taken
along line A-A' of FIG. 21 and a cross-sectional view taken along a
cell region of the semiconductor device;
[0025] FIG. 23 is a schematic diagram of a memory system in
accordance with the inventive concept; and
[0026] FIG. 24 is a schematic diagram of an electronic system in
accordance with the inventive concept.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0027] Various exemplary embodiments will be described more fully
hereinafter with reference to the accompanying drawings, in which
some exemplary embodiments are shown. The present inventive concept
may, however, be embodied in many different forms and should not be
construed as limited to the exemplary embodiments set forth herein.
Rather, these exemplary embodiments are provided so that this
description will be thorough and complete, and will fully convey
the scope of the present inventive concept to those skilled in the
art. In the drawings, the sizes and relative sizes of layers and
regions may be exaggerated for clarity.
[0028] It will be understood that when an element or layer is
referred to as being "on," "connected to" or "coupled to" another
element or layer, it can be directly on, connected or coupled to
the other element or layer or intervening elements or layers may be
present. In contrast, when an element is referred to as being
"directly on," "directly connected to" or "directly coupled to"
another element or layer, there are no intervening elements or
layers present. Like numerals refer to like elements throughout. As
used herein, the term "and/or" includes any and all combinations of
one or more of the associated listed items.
[0029] It will be understood that, although the terms first,
second, third, fourth etc. may be used herein to describe various
elements, components, regions, layers and/or sections, these
elements, components, regions, layers and/or sections should not be
limited by these terms. These terms are only used to distinguish
one element, component, region, layer or section from another
region, layer or section. Thus, a first element, component, region,
layer or section discussed below could be termed a second element,
component, region, layer or section without departing from the
teachings of the present inventive concept.
[0030] Spatially relative terms, such as "beneath," "below,"
"lower," "above," "upper" and the like, may be used herein for ease
of description to describe one element or feature's relationship to
another element(s) or feature(s) as illustrated in the figures. It
will be understood that the spatially relative terms are intended
to encompass different orientations of the device in use or
operation in addition to the orientation depicted in the figures.
For example, if the device in the figures is turned over, elements
described as "below" or "beneath" other elements or features would
then be oriented "above" the other elements or features. Thus, the
exemplary term "below" can encompass both an orientation of above
and below. The device may be otherwise oriented (rotated 90 degrees
or at other orientations) and the spatially relative descriptors
used herein interpreted accordingly.
[0031] The terminology used herein is for the purpose of describing
particular exemplary embodiments only and is not intended to be
limiting of the present inventive concept. As used herein, the
singular forms "a," "an" and "the" are intended to include the
plural forms as well, unless the context clearly indicates
otherwise. It will be further understood that the terms "comprises"
and/or "comprising," when used in this specification, specify the
presence of stated features, integers, steps, operations, elements,
and/or components, but do not preclude the presence or addition of
one or more other features, integers, steps, operations, elements,
components, and/or groups thereof.
[0032] Exemplary embodiments are described herein with reference to
cross-sectional illustrations that are schematic illustrations of
idealized exemplary embodiments (and intermediate structures). As
such, variations from the shapes of the illustrations as a result,
for example, of manufacturing techniques and/or tolerances, are to
be expected. Thus, exemplary embodiments should not be construed as
limited to the particular shapes of regions illustrated herein but
are to include deviations in shapes that result, for example, from
manufacturing. For example, an implanted region illustrated as a
rectangle will, typically, have rounded or curved features and/or a
gradient of implant concentration at its edges rather than a binary
change from implanted to non-implanted region. Likewise, a buried
region formed by implantation may result in some implantation in
the region between the buried region and the surface through which
the implantation takes place. Thus, the regions illustrated in the
figures are schematic in nature and their shapes are not intended
to illustrate the actual shape of a region of a device and are not
intended to limit the scope of the present inventive concept.
[0033] Unless otherwise defined, all terms (including technical and
scientific terms) used herein have the same meaning as commonly
understood by one of ordinary skill in the art to which this
inventive concept belongs. It will be further understood that
terms, such as those defined in commonly used dictionaries, should
be interpreted as having a meaning that is consistent with their
meaning in the context of the relevant art and will not be
interpreted in an idealized or overly formal sense unless expressly
so defined herein. For example, the term "extend" will generally be
understood to reference a lengthwise or longitudinal direction of
the particular element or feature being described even if not
explicitly stated.
[0034] An embodiment of a semiconductor device in accordance with
the inventive concept will now be described with reference to FIGS.
1-3.
[0035] Referring first to FIGS. 1 and 2, the semiconductor device
may have a first region (I) and a second region (II), and comprise
a memory structure disposed in the first region (I) and a capacitor
structure disposed in the second region (II). In exemplary
embodiments, the first region (I) may be a cell region where the
memory structure (that is, a memory cell) is disposed, and the
second region (II) may be a peripheral region where circuits and
wirings are disposed.
[0036] The semiconductor device also has a substrate 100 extending
across the first and second regions (1) and (II). The substrate 100
may comprise a semiconductor substrate. For example, the substrate
100 may comprise a silicon substrate, a germanium substrate, a
silicon-germanium substrate, a silicon-on-insulator (SOI)
substrate, a germanium-on-insulator (GOI) substrate, or the
like.
[0037] Furthermore, an isolation layer 105 may be disposed at an
upper portion of the substrate 100. The isolation layer 105 may
divide the device into a field region including the isolation layer
105 and an active region excluding the isolation layer 105. In an
exemplary embodiment, the isolation layer 105 may comprise a
silicon oxide and/or a silicon nitride.
[0038] Referring to FIG. 2, the memory structure in the first
region (I) may be, for example, a dynamic random access memory
(DRAM) structure. That is, the memory structure may comprise a
transistor (Tr) and a capacitor (Cap). The transistor (Tr) may
include a gate structure and impurity regions 112 and 114 buried at
an upper portion of the substrate 100.
[0039] The gate structure may comprise a gate insulation layer
pattern 120, a gate electrode 130 and a gate mask 140. In this
case, the gate insulation layer pattern 120 may be formed on an
inner wall of a trench which may be formed by partially removing an
upper portion of the substrate 100. The gate electrode 130 may be
disposed on the gate insulation layer pattern 120 to fill a lower
portion of the trench, and the gate mask 140 may be disposed on the
gate electrode 130 to fill an upper portion of the trench.
[0040] On the other hand, the impurity regions 112 and 114 may be
disposed at the upper portion of the substrate 100 on opposite
sides of the gate structure. As shown in the figure, the first
impurity region 112 may be disposed between and shared by two gate
structures, and the second impurity region 114 may be disposed on
sides of the gate structure opposite the sides between which the
first impurity region 112 extends.
[0041] A first insulating interlayer 150 may be disposed in the
first region (I) and the second region (II). In particular, the
first insulating interlayer 150 may cover the isolation layer 105
and the transistor (Tr). The first insulating interlayer 150
comprises an insulation material such as silicon oxide.
[0042] The bit line 160 may be disposed on the first insulating
interlayer 150. The bit line 160 may extend in a direction
substantially parallel to a top surface of the substrate 100.
Furthermore, the bit line 160 may be electrically connected to the
first impurity region 112 by a first contact 155 passing through
the first insulating interlayer 150. That is, the bit line 160 may
be electrically connected to a pair of the transistors (Tr) by the
first contact 155. Furthermore, a bit line mask 165 including an
insulation material may be disposed on the bit line 160.
[0043] A second insulating interlayer 170 may be disposed in the
first region (I) and the second region (II). In particular, the
second insulating interlayer 170 may cover the bit line 160 and the
bit line mask 170 on the first insulating interlayer 150. The
second insulating interlayer 170 comprises insulation material such
as silicon oxide.
[0044] A fourth landing pad 188 may be disposed on the second
insulating interlayer 170 in the first region (I). The fourth
landing pad 188 may be electrically connected to the second
impurity region 144 by a second contact 175 passing through the
first insulating interlayer 150 and the second insulating
interlayer 170. The fourth landing pad 188 may electrically connect
the transistors (Tr) with the capacitor (Cap) described in more
detail below. The fourth landing pad 188 may have a planar
(surface) area greater than the planar (surface) area of the second
contact 175, when viewed from a direction substantially
perpendicular to a top surface of the substrate 100. Therefore, the
fourth landing pad 188 may prevent an electrical failure due to a
misalignment between the second contact 175 and the capacitor
(Cap).
[0045] In exemplary embodiments, the fourth landing pad 188
comprises a metal or conductive polysilicon.
[0046] A cell capacitor (Cap) may penetrate a third insulating
interlayer 190 on the fourth landing pad 188. The cell capacitor
(Cap) may comprise a fifth lower electrode 208, a fifth dielectric
layer pattern 218 and a fifth upper electrode 228.
[0047] The fifth lower electrode 208 may be disposed on the fourth
landing pad 188. The fifth lower electrode 208 may extend in a
direction substantially perpendicular to the top surface of the
substrate 100. In exemplary embodiments, the fifth lower electrode
208 may have a cylinder shape in which a central portion is empty.
Alternatively, the fifth lower electrode 208 may have a pillar
shape extending in the direction substantially perpendicular to the
top surface of the substrate 100. The fifth electrode 208 may
comprise a metal, a metal nitride or conductive polysilicon.
[0048] The fifth dielectric layer pattern 218 may be disposed on
the fifth lower electrode 208. In exemplary embodiments, the fifth
dielectric layer pattern 218 may be disposed on an inner wall
and/or an outer wall of the fifth lower electrode 208. The fifth
dielectric layer pattern 218 may comprise a silicon oxide (SiOx),
silicon nitride (SiNx), aluminum oxide (AlOx), hafnium oxide
(HfOx), tantalum oxide (TaOx), titanium oxide (TiOx), zirconium
oxide (ZrOx), or a mixture thereof.
[0049] The fifth upper electrode 228 may be disposed on the fifth
dielectric layer pattern 218. The fifth upper electrode 228 may
comprise a metal, a metal nitride or conductive polysilicon.
[0050] The cell capacitor including the fifth lower electrode 208,
the fifth dielectric layer pattern 218 and the fifth upper
electrode 228 may serve to store an electrical charge.
[0051] Referring still to FIGS. 1 and 2, the capacitor structure
passing through the third insulating interlayer 190 may be disposed
in the second region (II). The capacitor structure may comprise
landing pads 182 and 184, lower electrodes 202, 204 and 206,
dielectric layer patterns 212, 214 and 216, upper electrodes 222
and 224 and wirings 242 and 244.
[0052] The first and second landing pads 182 and 184 may be
disposed on the second insulating interlayer 170 in the second
region (II). That is, the first and second landing pads 182 and 184
may be disposed at the same level as that of the fourth landing pad
188 in the first region (I). Furthermore, the first and second
landing pads 182 and 184 may comprise a material identical to that
of the fourth landing pad 188.
[0053] The first and second landing pads 182 and 184 may have a
plate shape such that thicknesses of the first and second landing
pads 182 and 184 may be smaller than lengths or widths of the first
and second landing pads 182 and 184. The first and second landing
pads 182 and 184 may be spaced apart from each other in a first
direction substantially parallel to the top surface of the
substrate 100. That is, the first and second landing pads 182 and
184 may not directly contact each other. Furthermore, bottom
surfaces of the first and second landing pads 182 and 184 may be
disposed directly on the second insulating interlayer 170 and the
first and second landing pads 182 and 184 may be completely spanned
by the second insulating interlayer 170. In this case, therefore,
the first and second landing pads 182 and 184 are not electrically
connected to any other conductive pattern or material disposed
below the first and second landing pads 182 and 184 whereas the
fourth landing pad 188 may be electrically connected to the second
contact 175 disposed below the fourth landing pad 188.
[0054] The lower electrodes 202, 204 and 206 may be disposed on the
landing pads 182 and 184. In exemplary embodiments, a plurality of
first lower electrodes 202 may be arranged in the first direction
and a second direction substantially perpendicular to the first
direction, thereby forming a first lower electrode array.
Furthermore, a plurality of second lower electrodes 204 may be
arranged in the first direction and the second direction, thereby
forming a second lower electrode array, and a plurality of third
lower electrodes 206 may be arranged in the first direction and the
second direction, thereby forming a third lower electrode array.
Each of the lower electrode arrays may comprise at least four lower
electrodes. For example, each of the lower electrode arrays may
comprise five to twenty five lower electrodes.
[0055] In the illustrated embodiment, the first lower electrodes
202 and the second lower electrodes 204 are disposed directly on
the first landing pad 182, and the third lower electrodes 206 are
disposed on the second landing pad 184. Accordingly, the first
landing pad 182 may contact the first lower electrodes 202 and the
second lower electrodes 204, so that the first landing pad 182 may
minimize an electrical resistance between the first lower
electrodes 202 and the second lower electrodes 204.
[0056] In exemplary embodiments, each of the lower electrodes 202,
204 and 206 is square (i.e., has a square contour) when viewed in
plan, i.e., in a direction substantially perpendicular to the top
surface of the substrate 100, as illustrated in FIG. 1; however,
the present invention is not limited thereto. For example, each of
the lower electrodes 202, 204 and 206 may be circular, elliptical,
or polygonal, when viewed in the direction substantially
perpendicular to the top surface of the substrate 100.
[0057] The dielectric layer patterns 212, 214 and 216 may be
disposed on the lower electrodes 202, 204 and 206, respectively.
The dielectric layer patterns 212, 214 and 216 may comprise a
material which may be identical to that of the fifth dielectric
layer pattern 218. Furthermore, each of the dielectric layer
patterns 212, 214 and 216 may have a structure identical to that of
the fifth dielectric layer pattern 218.
[0058] The upper electrodes 222 and 224 may be disposed on the
dielectric layer patterns 212, 214 and 216. The first upper
electrode 222 and the second upper electrode 224 may be spaced
apart from each other in the first direction. Furthermore, the
first upper electrode 222 and the second upper electrode 224 may be
associated with respective ones of the lower electrodes 202, 204
and 206. For example, the first upper electrode 222 may overlap the
first lower electrodes 202, and the second upper electrode 224 may
overlap the second lower electrodes 204 and the third lower
electrodes 206.
[0059] Therefore, the first lower electrodes 202, the first
dielectric layer patterns 212 and the first upper electrode 222 may
constitute a first capacitor array (CAP1). The second lower
electrodes 204, the second dielectric layer patterns 214 and the
second upper electrode 224 may constitute a second capacitor array
(CAP2), and the third lower electrodes 206, the third dielectric
layer patterns 216 and the second upper electrode 224 may
constitute a third capacitor array (CAP3). Note, in this respect,
the upper electrodes 224 of the capacitors of the second capacitor
array (CAP2) and the third capacitor array (CAP3) are integral and
in this example, are unitary.
[0060] Referring to FIG. 3, the capacitors may be electrically
connected to each other, thereby constituting the capacitor
structure.
[0061] Capacitors (C11, C12, C13, C14) constituting the first
capacitor array (CAP1) may be electrically connected to each other
in parallel, capacitors (C21, C22, C23, C24) constituting the
second capacitor array (CAP2) may be electrically connected to each
other in parallel, and capacitors (C31, C32, C33, C34) constituting
the third capacitor array (CAP3) may be electrically connected to
each other in parallel.
[0062] Furthermore, the first capacitor array (CAP1) and the second
capacitor array (CAP2) may be electrically connected by the first
landing pad 182, and the second capacitor array (CAP2) and the
third capacitor array (CAP3) may be electrically connected by the
second upper electrode 224.
[0063] The fourth insulating interlayer 230 may be disposed on the
third insulating interlayer 190 to cover the upper electrodes 222
and 224. In exemplary embodiments, the fourth insulating interlayer
230 comprises an insulation material such as a silicon oxide.
[0064] The wirings 242 and 244 may be disposed on the fourth
insulating interlayer 230. In exemplary embodiments, the first
wiring 242 may be electrically connected to the upper electrode 222
by a third contact 232 passing through the fourth insulating
interlayer 230, and the second wiring 244 may be electrically
connected to the second landing pad 184 by a fourth contact 234
passing through the second insulating interlayer 190 and the fourth
insulating interlayer 230. Therefore, the first to third capacitor
arrays (CAP1, CAP2 and CAP3) may be electrically connected in
series between the first wiring 242 and the second wiring 244.
[0065] Furthermore, a protection layer 250 may be disposed on the
fourth insulating interlayer 230 to cover the wirings 242 and
244.
[0066] In an exemplary embodiment, a relatively high voltage (Vext)
may be applied to the first wiring 242, and a relatively low
voltage (VSS) may be applied to the second wiring 244.
[0067] Each of the capacitor arrays (CAP1, CAP2, CAP3) may be
directly connected by the first landing pad 182 or the integral
second upper electrode 224, so that an electrical resistance
between the capacitor arrays (CAP1, CAP2, CAP3) may be reduced, and
the capacitor structure may have an improved effective
capacitance.
[0068] In exemplary embodiments, the capacitor structure may
comprise the first to third capacitor arrays as illustrated in
FIGS. 1 to 3. However, the inventive concept may not be limited
thereto. For example, the capacitor structure may comprise any odd
number of capacitor arrays (e.g., 5, 7, 9 . . . ) adjacent ones of
which are alternately and repeatedly connected by a landing pad and
an upper electrode.
[0069] FIGS. 4 to 11 are cross-sectional views illustrating a
method of manufacturing a semiconductor device in accordance with
some exemplary embodiments.
[0070] Referring to FIG. 4, an isolation layer 105 may be formed at
an upper portion of a substrate 100, and a trench 110 may be formed
by partially removing the substrate 100.
[0071] The substrate 100 may comprise a semiconductor substrate.
For example, the substrate 100 may comprise a silicon substrate, a
germanium substrate, a silicon-germanium substrate, a
silicon-on-insulator (SOI) substrate, a germanium-on-insulator
(GOI) substrate, or the like.
[0072] The substrate 100 may span a first region (I) and second
region (II) of the device under manufacture. In exemplary
embodiments, the first region (I) may be a cell region where the
memory structure (that is, a memory cell) may be disposed, and the
second region (II) may be a peripheral region where circuits and
wirings may be disposed.
[0073] The upper portion of the substrate 100 may be partially
removed to form a recess, and the isolation layer 105 of a silicon
oxide and/or a silicon nitride may be formed to fill the recess.
Therefore, the substrate 100 may be divided into a field region
including the isolation layer 105 and an active region excluding
the isolation layer 105.
[0074] Then, a hard mask may be formed on the substrate 100, and
the trench 110 may be formed in the first region (I) by an etching
process using the hard mask. In exemplary embodiments, a pair of
trenches 110 may be formed in each (i.e., in a single) active
region.
[0075] Also, impurities may be implanted into an upper portion of
the substrate 100, before or after forming the trench 110.
Therefore, a first impurity region 112 and a second impurity region
114 may be formed at the upper portion of the substrate 100.
[0076] Referring to FIG. 5, a gate structure may be formed in the
trench 110.
[0077] In particular, a gate insulation layer and a gate electrode
layer may be formed sequentially on the substrate 100 and the
isolation layer 105 to fill the trench 110, and then the gate
insulation layer and the gate electrode layer may be partially
removed by a chemical mechanical planarization (CMP) process or an
etch back process, thereby forming a gate insulation layer pattern
120 and a gate electrode 130.
[0078] In exemplary embodiments, the gate insulation layer may be
formed of a silicon oxide or a silicon nitride by thermally
oxidizing an upper surface of the substrate 100 exposed by the
trench 110, or by an atomic layer deposition (ALD) process or a
chemical vapor deposition (CVD). Furthermore, the gate electrode
layer may be formed of a metal or a metal nitride, such as tungsten
(W), tantalum nitride (TaN), titanium nitride (TiN), or tungsten
nitride (WN), by a physical vapor deposition (PVD) process, an ALD
process, or a sputtering process, for example.
[0079] Then, a gate mask layer may be formed on the substrate 100
and the isolation layer 105 to fill a remaining portion of the
trench 110, and an upper portion of the gate mask layer may be
removed by a CMP process and/or an etch back process. In exemplary
embodiments, the gate mask layer may be formed of a silicon nitride
or a silicon oxynitride.
[0080] Therefore, the gate structure may be constituted by the gate
insulation layer 120, the gate electrode 130 and the gate mask
140.
[0081] Next, a first insulating interlayer 150 may be formed on the
substrate 100, the isolation layer 105 and the gate structure.
[0082] Referring to FIG. 6, a first contact 155 may be formed
through the first insulating interlayer 150, and a bit line 160 may
be formed on the first contact 155 and the first insulting
interlayer 150.
[0083] More specifically, a contact hole exposing the first
impurity region 112 may be formed by partially removing the first
insulating interlayer 150, and then the first contact 155 may be
formed to fill the contact hole. In exemplary embodiment, the first
contact 155 may be electrically connected to the first impurity
region 112.
[0084] Then, a bit line layer and a bit line mask layer may be
sequentially formed on the first insulating interlayer 150 and the
first contact 155, and the bit line layer and the bit line mask
layer may be patterned to form the bit line 160 and the bit line
mask 165.
[0085] Furthermore, a second insulating interlayer 170 may be
formed on the first insulating interlayer 150 to cover the bit line
160 and the bit line mask 165.
[0086] Referring to FIG. 7, a second contact 175 may be formed
through the first insulating interlayer 150 and the second
insulating interlayer 170, and then conductive landing pads 182,
184 and 188 may be formed.
[0087] More specifically, a contact hole exposing the second
impurity region 114 may be formed by partially removing the first
insulating interlayer 150 and the second insulating interlayer 170,
and then the second contact 175 may be formed to fill the contact
hole. In exemplary embodiments, the second contact 175 may be
electrically connected to the second impurity region 114.
[0088] Then, the landing pads 182, 184 and 188 may be formed on the
second insulating interlayer 170 and the second contact 175. In
exemplary embodiments, a landing pad layer may be formed on the
second insulating interlayer 170 and the second contact 175 in the
first region (I) and the second region (II), and then the landing
pad layer may be partially removed to form the first landing pad
182, the second landing pad 184 and the fourth landing pad 188,
simultaneously.
[0089] In exemplary embodiments, the fourth landing pad 188 may
directly contact the second contact 175 in the first region (I). At
this time, bottom surfaces of the first landing pad 182 and the
second landing 184 may be covered completely by the second
insulating interlayer 170.
[0090] Referring to FIG. 8, a third insulating interlayer 190 may
be formed on the second insulating interlayer 170 and the landing
pads 182, 184 and 188, and holes 192, 194, 196 and 198 may be
formed by partially removing the third insulating interlayer
190.
[0091] The holes 192, 194, 196 and 198 may pass through the third
insulating interlayer 190, and may partially expose the landing
pads 192, 194 and 188, respectively.
[0092] In exemplary embodiments, the first holes 192 and the second
holes 194 may partially expose a top surface of the first landing
pad 182, the third holes 196 may partially expose a top surface of
the second landing pad 184, and the fourth holes 198 may partially
expose a top surface of the fourth landing pad 188.
[0093] In exemplary embodiments, a plurality of first holes 192 may
be arranged in a first direction and a second direction which may
be substantially parallel to a top surface of the substrate 100, a
plurality of second holes 194 may be arranged in the first
direction and the second direction, and a plurality of third holes
196 may be arranged in the first direction and second direction.
That is, the plurality of first holes 192 may constitute a first
hole array, the plurality of second holes 194 may constitute a
second hole array, and the plurality of third holes 196 may
constitute a third hole array.
[0094] In exemplary embodiments, each of the holes 192, 194, 196
and 198 may have a square cross section, a circular cross section,
an elliptical cross section, or a polygonal cross section, i.e.,
may be square, circular, elliptical or polygonal when viewed in a
direction substantially perpendicular to the top surface of the
substrate 100.
[0095] Referring to FIG. 9, lower electrodes 202, 204, 206 and 208
and dielectric layer patterns 212, 214, 216 and 218 may be formed
on top surfaces of the landing pads 182, 184 and 186 and sidewalls
of holes 192, 194, 196 and 198.
[0096] In exemplary embodiments, a lower electrode layer and a
dielectric layer may be formed on the top surfaces of the landing
pads 182, 184 and 186, along sides of the holes 192, 194, 196 and
198 and a top surface of the third insulating interlayer 190, and
then top portions of the lower electrode layer and the dielectric
layer may be removed by a CMP process or an etch back process,
thereby forming the lower electrodes 202, 204, 206 and 208 and the
dielectric layer patterns 212, 214, 216 and 218.
[0097] Accordingly, the fifth lower electrode 208 in the first
region (I) may be formed simultaneously with the first to third
lower electrodes 202, 204 and 206 in the second region (II).
Furthermore, the fifth dielectric layer pattern 218 in the first
region (I) may be formed simultaneously with the first to third
dielectric layer patterns 212, 214 and 216.
[0098] Referring to FIG. 10, upper electrodes 222, 224 and 228 may
be formed on the third insulating interlayer 190 to fill the holes
192, 194, 196 and 198.
[0099] More specifically, an upper electrode layer may be formed on
the third insulating interlayer 190 to fill the holes 192, 194, 196
and 198, and then the upper electrode layer may be partially
removed to form the upper electrodes 222, 224 and 228.
[0100] Then, a fourth insulating interlayer 230 may be formed on
the third insulating interlayer 190 to cover the upper electrodes
222, 224 and 228.
[0101] Referring to FIG. 11, after forming a third contact 232 and
a fourth contact 234, wirings 242 and 244 may be formed on the
fourth insulating interlayer 230.
[0102] In exemplary embodiments, the third contact 232 may be
formed through the fourth insulating interlayer 230 and the fourth
contact 234 may be formed through the third insulating interlayer
190 and the fourth insulating interlayer 230.
[0103] Then, a protection layer 250 may be formed to cover the
wirings 242 and 244.
[0104] FIG. 12 and FIG. 13 illustrate another embodiment of a
semiconductor device according to the inventive concept.
[0105] Referring to FIGS. 12 and 13, the semiconductor device may
comprise a memory structure disposed in a first region (I) of the
device and a capacitor structure disposed in a second region (II)
of the device. The memory structure may be substantially identical
to that described with reference to FIG. 2. Therefore, the memory
structure will not be described again in detail. The capacitor
structure may be substantially similar to the capacitor structure
described with reference to FIGS. 1-3 except for a second landing
pad 185 and a fourth capacitor array.
[0106] A first landing pad 182 and a second landing pad 185 may be
disposed on the second insulating interlayer 170 in the second
region (II). The first landing pad 182 and the second landing pad
185 may extend in a first direction parallel to a top surface of
the substrate 100. Furthermore, the first landing pad 182 and the
second landing pad 185 may be spaced apart from each other in the
first direction. Bottom surfaces of the first landing pad 182 and
the second landing pad 185 may be insulated by the second
insulating interlayer 170. That is, the first landing pad 182 and
the second landing pad 185 may not be electrically connected to any
other conductive pattern or material disposed below the first and
second landing pads 182 and 185.
[0107] Lower electrodes 202, 204, 206 and 207 may be disposed on
the first and second landing pads 182 and 185. In exemplary
embodiments, a plurality of first lower electrodes 202 may be
arranged in the first direction and the second direction
substantially perpendicular to the first direction, thereby forming
a first lower electrode array. A plurality of second lower
electrodes 204 may be arranged in the first direction and the
second direction, thereby forming a second lower electrode array,
and a plurality of third lower electrodes 206 may be arranged in
the first direction and the second direction, thereby forming a
third lower electrode array. Furthermore, a plurality of fourth
lower electrodes 207 may be arranged in the first direction and the
second direction, thereby forming a fourth lower electrode
array.
[0108] Each of the lower electrodes 202, 204, 206 and 207 may be
associated with one of the landing pads 182 and 185. For example,
the first lower electrodes 202 and the second lower electrodes 204
may be disposed directly on the first landing pad 182, and the
third lower electrodes 206 and the fourth lower electrodes 207 may
be disposed directly on the second landing pad 185. Accordingly,
the first landing pad 182 may contact the first lower electrodes
202 and the second lower electrodes 204, and the second landing pad
185 may contact the third lower electrodes 206 and the fourth lower
electrodes 207.
[0109] The dielectric layer patterns 212, 214, 216 and 217 may be
disposed on the lower electrodes 202, 204, 206 and 207,
respectively.
[0110] The upper electrodes 222, 224 and 226 may be disposed on the
dielectric layer patterns 212, 214, 216 and 217, respectively. The
first to third upper electrodes 222, 224 and 226 may be spaced
apart from each other in the first direction. In exemplary
embodiments, the first upper electrode 222 may overlap the first
lower electrodes 202, the second upper electrodes 224 may overlap
the second lower electrodes 204 and the third lower electrodes 206,
and the third upper electrode 226 may overlap the fourth lower
electrodes 207.
[0111] Therefore, the first lower electrodes 202, the first
dielectric layer patterns 212 and the first upper electrode 222 may
constitute a first capacitor array (CAP1), and the second lower
electrodes 204, the second dielectric layer patterns 214 and the
second upper electrode 224 may constitute a second capacitor array
(CAP2). The third lower electrodes 206, the third dielectric layer
patterns 216 and the second upper electrode 224 may constitute a
third capacitor array (CAP3), and the fourth lower electrode 207,
the fourth dielectric layer pattern 217 and the third upper
electrode 226 may constitute a fourth capacitor array (CAP4).
[0112] In this case, the first capacitor array (CAP1) and the
second capacitor array (CAP2) may be electrically connected in
series by the first landing pad 182, and the second capacitor array
(CAP2) and the third capacitor array (CAP3) may be electrically
connected in series by the second upper electrode 224. Furthermore,
the third capacitor array (CAP3) and the fourth capacitor array
(CAP4) may be electrically connected in series by the second
landing pad 185.
[0113] On the other hand, a first wiring 242 may be electrically
connected to the first upper electrode 222 by a third contact 232,
and a second wiring 244 may be electrically connected to the third
upper electrode 226 by a fourth contact 236. Accordingly, the third
contact 232 and the fourth contact 236 may have a minimal height,
and an electrical resistance of each of the third contact 232 and
the fourth contact 236 may be improved.
[0114] The capacitor arrays (CAP1, CAP2, CAP3, CAP4) may be
directly connected to one another by the first landing pad 182, the
second upper electrode 224 and the second landing pad 185 such that
an electrical resistance between the capacitor arrays (CAP1, CAP2,
CAP3, CAP4) may be minimized, and the capacitor structure may have
an improved effective capacitance.
[0115] In the embodiment illustrated in FIGS. 12 and 13, the
capacitor structure has only four capacitor arrays, i.e., the first
to fourth capacitor arrays. However, the inventive concept is not
limited thereto. For example, the capacitor structure may comprise
any even number of capacitor arrays (e.g., 6, 8, 10 . . . )
adjacent ones of which are alternately and repeatedly connected by
a landing pad and an upper electrode.
[0116] Another embodiment of a semiconductor device in accordance
with the inventive concept is illustrated in FIGS. 14 and 15.
[0117] Referring to FIGS. 14 and 15, the semiconductor device may
comprise a memory structure disposed in a first region (I) of the
device and a capacitor structure disposed in a second region (II)
of the device. The memory structure may be substantially identical
to that described with reference to FIG. 2. The capacitor structure
may be substantially similar to the capacitor structure described
with reference to FIGS. 1-3 except for landing pads 181, 183 and
186 and a fourth capacitor array.
[0118] A first landing pad 181, a second landing pad 183 and a
fourth landing pad 186 may be disposed on the second insulating
interlayer 170 in the second region (II) of the device. The first
to third landing pads 181, 183 and 186 may be spaced apart from
each other in a first direction parallel to a top surface of the
substrate 100. Bottom surfaces of the first to third landing pads
181, 183 and 186 may be insulated by the second insulating
interlayer 170. That is, the first to third landing pads 181, 183
and 186 may not be electrically connected to any other conductive
pattern or material disposed below the first to third landing pads
181, 183 and 186.
[0119] Lower electrodes 202, 204, 206 and 207 may be disposed on
the first to third landing pads 181, 183 and 186. In exemplary
embodiments, a plurality of first lower electrodes 202 may be
arranged in the first direction and the second direction
substantially perpendicular to the first direction, thereby forming
a first lower electrode array. A plurality of second lower
electrodes 204 may be arranged in the first direction and the
second direction, thereby forming a second lower electrode array,
and a plurality of third lower electrodes 206 may be arranged in
the first direction and the second direction, thereby forming a
third lower electrode array. Furthermore, a plurality of fourth
lower electrodes 207 may be arranged in the first direction and the
second direction, thereby forming a fourth lower electrode
array.
[0120] Each of the lower electrodes 202, 204, 206 and 207 may be
associated with one of the first to third landing pads 181, 183 and
186. For example, the first lower electrodes 202 may be disposed
directly on the first landing pad 181, and the second lower
electrodes 204 and the third lower electrodes 206 may be disposed
directly on the second landing pad 183. The fourth lower electrodes
207 may be disposed directly on the third landing pad 186.
Accordingly, the second landing pad 183 may contact the second
lower electrodes 204 and the third lower electrodes 206.
[0121] The dielectric layer patterns 212, 214, 216 and 217 may be
disposed on the lower electrodes 202, 204, 206 and 207,
respectively.
[0122] The upper electrodes 222 and 224 may be disposed on the
dielectric layer patterns 212, 214, 216 and 217, respectively. The
first and second upper electrodes 222 and 224 may extend in the
first direction. Furthermore, the first and second upper electrodes
222 and 224 may be spaced apart from each other in the first
direction. In exemplary embodiments, the first upper electrode 222
may overlap the first lower electrodes 202 and the second lower
electrodes 204, and the second upper electrodes 224 may overlap the
third lower electrodes 206 and the fourth lower electrodes 207.
[0123] Therefore, the first lower electrodes 202, the first
dielectric layer patterns 212 and the first upper electrode 222 may
constitute a first capacitor array (CAP1), and the second lower
electrodes 204, the second dielectric layer patterns 214 and the
first upper electrode 222 may constitute a second capacitor array
(CAP2). The third lower electrodes 206, the third dielectric layer
patterns 216 and the second upper electrode 224 may constitute a
third capacitor array (CAP3), and the fourth lower electrode 207,
the fourth dielectric layer pattern 217 and the second upper
electrode 224 may constitute a fourth capacitor array (CAP4).
[0124] In this case, the first capacitor array (CAP1) and the
second capacitor array (CAP2) may be electrically connected in
series by the first upper electrode 222, and the second capacitor
array (CAP2) and the third capacitor array (CAP3) may be
electrically connected in series by the second landing pad 183.
Furthermore, the third capacitor array (CAP3) and the fourth
capacitor array (CAP4) may be electrically connected in series by
the second upper electrode 224.
[0125] On the other hand, a first wiring 242 may be electrically
connected to the first landing pad 183 by a third contact 231, and
a second wiring 244 may be electrically connected to the third
landing pad 186 by a fourth contact 234. Accordingly, even though
the first and second wirings 242 and 244 do not overlap the first
and second upper electrodes 222 and 224, the first and second
wirings 242 and 244 may be electrically connected to the capacitor
arrays.
[0126] The capacitor arrays (CAP1, CAP2, CAP3, CAP4) may be
directly connected by the second landing pad 183, the first upper
electrode 222 and the second upper electrode 224 such that an
electrical resistance between the capacitor arrays (CAP1, CAP2,
CAP3, CAP4) may be minimal, and the capacitor structure may have an
improved effective capacitance.
[0127] In the embodiment illustrated in FIGS. 14 and 15, the
capacitor structure may have only four capacitor arrays, i.e., may
have the first to fourth capacitor arrays. However the inventive
concept is not limited thereto. For example, the capacitor
structure may comprise any even number of capacitor arrays (e.g.,
6, 8, 10 . . . ), adjacent ones of which are alternately and
repeatedly connected by a landing pad and an upper electrode.
[0128] Another embodiment of a semiconductor device in accordance
with the inventive concept is illustrated in FIGS. 16 and 17.
[0129] Referring to FIGS. 16 and 17, the semiconductor device may
comprise a memory structure disposed in a first region (I) of the
device and a capacitor structure disposed in a second region (II)
of the device. The memory structure may be substantially identical
to that described with reference to FIG. 2.
[0130] A first landing pad 182 may be disposed on the second
insulating interlayer 170 in the second region (II) of the device.
The first landing pad 182 may extend in a first direction.
[0131] Lower electrodes 202A, 202B, 202C, 202D, 204A, 204B, 204C
and 204D may be disposed directly on the first landing pad 182.
Therefore, the first landing pad 182 may contact the lower
electrodes 202A, 202B, 202C, 202D, 204A, 204B, 204C and 204D.
[0132] In exemplary embodiments, a plurality of first lower
electrodes 202A, 202B, 202C and 202D may be arranged in the first
direction and the second direction substantially perpendicular to
the first direction, thereby forming a first lower electrode array.
A plurality of second lower electrodes 204A, 204B, 204C and 204D
may be arranged in the first direction and the second direction,
thereby forming a second lower electrode array.
[0133] The dielectric layer patterns 212 and 214 may be disposed on
the lower electrodes 202A, 202B, 202C, 202D, 204A, 204B, 204C and
204D, respectively.
[0134] The upper electrodes 222 and 224 may be disposed on the
dielectric layer patterns 212 and 214, respectively. The first and
second upper electrodes 222 and 224 may be spaced apart from each
other in the first direction. In exemplary embodiments, the first
upper electrode 222 may overlap the first lower electrodes 202A,
202B, 202C and 202D, and the second upper electrodes 224 may
overlap the second lower electrodes 204A, 204B, 204C and 204D.
[0135] Therefore, the first lower electrodes 202A, 202B, 202C and
202D, the first dielectric layer patterns 212 and the first upper
electrode 222 may constitute a first capacitor array (CAP1), and
the second lower electrodes 204A, 204B, 204C and 204D, the second
dielectric layer patterns 214 and the second upper electrode 224
may constitute a second capacitor array (CAP2).
[0136] In this case, the first capacitor array (CAP1) and the
second capacitor array (CAP2) may be electrically connected in
series by the first landing pad 182.
[0137] On the other hand, a first wiring 242 may be electrically
connected to the first upper electrode 222 by a third contact 233,
and a second wiring 244 may be electrically connected to the second
upper electrode 224 by a fourth contact 235. In exemplary
embodiments, the first wiring 242 and the second wiring 244 may
extend in the first direction. Furthermore, the first wiring 242
and the second wiring 244 may be spaced apart from each other in
the first direction. Furthermore, the third contact 233 and the
fourth contact 235 may have a bar shape and extend longitudinally,
i.e., may be elongated, in the first direction, when viewed in a
direction substantially perpendicular to the top surface of the
substrate 100. Accordingly, the first wiring 242, the second wiring
244, the third contact 233 and the fourth contact 235 may extend in
the same direction, and the first capacitor array and the second
capacitor array are spaced apart from each other in the same
direction. Therefore, the capacitor structure may have an improved
effective capacitance. This will be described with respect to a
comparative example illustrated in FIG. 18.
[0138] The capacitor structure of the semiconductor device of the
comparative example of FIG. 18 is substantially similar to the
capacitor structure described with reference to FIGS. 16 and 17
except for the contacts 237 and 239 and the wirings 243 and
245.
[0139] A first capacitor array and a second capacitor array are
spaced apart from each other in a first direction.
[0140] A first wiring 243 and a second wiring 245 extend in a
second direction substantially perpendicular to the first
direction. Furthermore, the first wiring 243 is electrically
connected to the first upper electrode 222 by a third contact 237,
and a second wiring 245 is electrically connected to the second
upper electrode 224 by a fourth contact 239. Each of the third
contact 237 and the fourth contact 239 have a bar shape and extend
longitudinally in the second direction.
[0141] Accordingly, the first wiring 243, the second wiring 245,
the third contact 237 and the fourth contact 239 extend in the same
direction, while the first capacitor array and the second capacitor
array are spaced apart from each other in another direction.
[0142] Table 1 shows a simulation result of effective capacitance
and effective resistance in accordance with an exemplary embodiment
(FIGS. 16 and 17) and the comparative example (FIG. 18). According
to the simulation result, the capacitor structure of the exemplary
embodiment has a lower effective resistance compared to the example
of FIG. 18. Accordingly, it is shown that the direction of the
wirings and the contacts in the embodiment of FIGS. 16 and 17
optimize the resistance characteristics of the capacitor
structure.
TABLE-US-00001 Effective Effective Improvement capacitance
resistance in effective Drawing (pF) (.OMEGA.) resistance Exemplary
FIGS. 16 and 10.8 20.3 -42.1% embodiment 17 Comparative FIG. 18
10.8 35.1 -- embodiment
[0143] Another embodiment of a semiconductor device in accordance
with the inventive concept is shown in FIGS. 19 and 20.
[0144] Referring to FIGS. 19 and 20, the semiconductor device may
comprise a memory structure disposed in a first region (I) of the
device and a capacitor structure disposed in a second region (II)
of the device. The memory structure may be substantially identical
to that described with reference to FIG. 2.
[0145] A first landing pad 183 and a second landing pad 185 may be
disposed on the second insulating interlayer 170 in the second
region (II) of the device. The first and second landing pads 183
and 185 may be spaced apart from each other in a first direction
parallel to a top surface of the substrate 100. Furthermore, each
of the first and second landing pads 183 and 185 may extend in a
second direction which may be substantially perpendicular to the
first direction.
[0146] Lower electrodes 202A, 202B, 202C, 202D, 204A, 204B, 204C
and 204D may be disposed on the first and second landing pad 183
and 185. In exemplary embodiments, the first lower electrodes 202A,
202B, 202C and 202D may be disposed on the first landing pad 183,
and the second lower electrode 204A, 204B, 204C and 204D may be
disposed on the second landing pad 185.
[0147] In exemplary embodiments, a plurality of first lower
electrodes 202A, 202B, 202C and 202D may be arranged in the first
direction and the second direction substantially perpendicular to
the first direction, thereby forming a first lower electrode array.
A plurality of second lower electrodes 204A, 204B, 204C and 204D
may be arranged in the first direction and the second direction,
thereby forming a second lower electrode array.
[0148] The dielectric layer patterns 212 and 214 may be disposed on
the lower electrodes 202A, 202B, 202C, 202D, 204A, 204B, 204C and
204D, respectively.
[0149] The upper electrode 222 may be disposed on the dielectric
layer patterns 212 and 214. The upper electrode 222 may overlap the
first lower electrodes 202A, 202B, 202C and 202D and the second
lower electrodes 204A, 204B, 204C and 204D.
[0150] Therefore, the first lower electrodes 202A, 202B, 202C and
202D, the first dielectric layer patterns 212 and the upper
electrode 222 may constitute a first capacitor array (CAP1), and
the second lower electrodes 204A, 204B, 204C and 204D, the second
dielectric layer patterns 214 and the upper electrode 222 may
constitute a second capacitor array (CAP2).
[0151] In this case, the first capacitor array (CAP1) and the
second capacitor array (CAP2) may be electrically connected in
series by the upper electrode 222.
[0152] Referring now to FIG. 20, a first wiring 242, a second
wiring 244 and a third wiring 246 may be disposed on a fourth
insulating interlayer 230.
[0153] In exemplary embodiments, the third wiring 246 may overlap
the first upper electrode 222. The third wiring 246 may not be
electrically connected to the capacitor structure. That is, the
third wiring 246 may serve merely to transfer an electrical signal
through the second region (II) of the device. However, due to its
disposition the third wiring 246 makes it difficult to electrically
connect the first wiring 242 and the second wiring 244 to the first
upper electrode 222.
[0154] Nonetheless, first wiring 242 may be electrically connected
to the first landing pad 183 by a third contact 232, and second
wiring 244 may be electrically connected to the second landing pad
185 by a fourth contact 234. Accordingly, even though the first
wiring 242 and the second wiring 244 do not overlap the upper
electrode 222, the first and second wirings 242 and 244 may be
electrically connected to the capacitor arrays.
[0155] Another embodiment of a semiconductor device in accordance
with the inventive concept is shown in FIGS. 21 and 22.
[0156] Referring to FIGS. 21 and 22, the semiconductor device may
comprise a memory structure disposed in a first region (I) of the
device and a capacitor structure disposed in a second region (II)
of the device. The memory structure may be substantially identical
to that described with reference to FIG. 2.
[0157] A first landing pad 182 may be disposed on the second
insulating interlayer 170 in the second region (II) of the device.
The first landing pad 182 may have the shape of a plate.
[0158] Lower electrodes 202A, 202B, 202C and 202D may be disposed
on the first landing pad 182. In exemplary embodiments, a plurality
of first lower electrodes 202A, 202B, 202C and 202D may be arranged
in the first direction and the second direction substantially
perpendicular to the first direction, thereby forming a first lower
electrode array.
[0159] The dielectric layer patterns 212 may be disposed on the
lower electrodes 202A, 202B, 202C and 202D, respectively. The upper
electrode 222 may be disposed on the dielectric layer patterns
212.
[0160] Therefore, the first lower electrodes 202A, 202B, 202C and
202D, the first dielectric layer patterns 212 and the upper
electrode 222 may constitute a first capacitor array (CAP1). In
this case, the first capacitors of the first capacitor array (CAP1)
may be electrically connected in parallel.
[0161] Referring now to FIG. 22, a first wiring 242 and a second
wiring 244 may be disposed on a fourth insulating interlayer 230.
In this embodiment, the first wiring 242 and the second wiring 244
may extend in a first direction.
[0162] The first wiring 242 may be electrically connected to the
upper electrode 222 by a third contact 232, and the second wiring
244 may be electrically connected to the first landing pad 182 by a
fourth contact 234. Accordingly, the first wiring 242 and the
second wiring 244 may be electrically connected to the first
capacitor array (CAP1). Furthermore, the capacitor array may have a
single stage structure.
[0163] Referring now to FIG. 21, lower metal patterns 262 and 264
may be disposed on the fourth insulating interlayer 230. The lower
metal patterns 262 and 264 may not form a closed loop, when viewed
in a direction substantially perpendicular to a top surface of the
substrate 100. For example, the lower metal patterns 262 and 264
may each have a bar shape extending in the first direction or a
second direction.
[0164] Each of the lower metal patterns 262 and 264 may serve as a
terminal for connecting the semiconductor device with external
wirings of a semiconductor package.
[0165] In exemplary embodiments, the lower metal patterns 262 and
264 may not form the closed loop, so that the first and second
wirings 242 and 244 may not overlap the lower metal patterns 262
and 264.
[0166] FIG. 23 illustrates an embodiment of a memory system in
accordance with the inventive concept.
[0167] Referring to FIG. 23, a controller 310 and a memory 320 may
be configured to exchange electric signals. For example, the memory
320 and the controller 310 may transfer data with each other
according to a command of the controller 310. Accordingly, the
memory system 300 may store data in the memory 320 or output data
from the memory 320.
[0168] The memory 320 may comprise one of the semiconductor devices
described with reference to FIGS. 1-22. The memory 320 may be a
dynamic random access memory (DRAM), a static random access memory
(SRAM), a flash memory, a phase change RAM (PRAM), a non-volatile
memory or the like.
[0169] The memory system 300 may be employed by mobile or portable
electronic devices or products, such as a multi media card (MMC) or
a secure digital (SD) card.
[0170] FIG. 24 illustrates an embodiment of an electronic system in
accordance with the inventive concept.
[0171] Referring to FIG. 24, a processor 410, an input/output
device 430, and a memory 420 may communicate with each other
through a bus 440. The processor 410 may execute a program and
control the system 400. The input/output device 430 may input or
output data of the system 400. The system 400 may be connected to
an external device, such as a personal computer or a network, via
the input/output device 430 so as to exchange data with the
external device.
[0172] The memory 420 may store a code or data for operation of the
processor 410. The memory 420 may comprise anyone of the
semiconductor devices described with reference to FIGS. 1-22. The
memory 420 may comprise a DRAM, an SRAM, a flash memory, a PRAM, or
the like.
[0173] The system 400 may be employed by mobile or portable
electronic devices or products, such as mobile phones, MP3 players,
navigation systems, solid state drives (SSDs), and household
appliances.
[0174] As described above, a semiconductor device may comprise a
plurality of capacitor arrays, and these capacitor arrays may be
electrically connected by a landing pad and/or an upper electrode.
Therefore, electrical resistance between the capacitor arrays may
be minimized, and the capacitor structure may have an improved
effective capacitance.
[0175] Finally, embodiments of the inventive concept and examples
thereof have been described above in detail. The inventive concept
may, however, be embodied in many different forms and should not be
construed as being limited to the embodiments described above.
Rather, these embodiments were described so that this disclosure is
thorough and complete, and fully conveys the inventive concept to
those skilled in the art. Thus, the true spirit and scope of the
inventive concept is not limited by the embodiment and examples
described above but by the following claims.
* * * * *