U.S. patent application number 15/044559 was filed with the patent office on 2017-08-17 for magneto-resistive effect element having side shield integrated with upper shield.
The applicant listed for this patent is TDK Corporation. Invention is credited to Naomichi DEGAWA, Masachika HASHINO, Tetsuya HIRAKI, Hidekazu KOJIMA, Satoshi MIURA, Hisayoshi WATANABE.
Application Number | 20170236538 15/044559 |
Document ID | / |
Family ID | 59561642 |
Filed Date | 2017-08-17 |
United States Patent
Application |
20170236538 |
Kind Code |
A1 |
WATANABE; Hisayoshi ; et
al. |
August 17, 2017 |
MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SIDE SHIELD INTEGRATED WITH
UPPER SHIELD
Abstract
A magneto-resistive effect element (MR element) has an upper
shield that is magnetized in a cross track direction, a lower
shield that is positioned at an interval relative to the upper
shield in a down track direction, and a multilayer film that is
positioned between the upper shield and the lower shield and that
faces an air bearing surface (ABS). The multilayer film has a free
layer where its magnetization direction fluctuates relative to an
external magnetic field, a pinned layer where its magnetization
direction is pinned against the external magnetic field, a
nonmagnetic spacer layer that is positioned between the free layer
and the pinned layer, and an insulating layer that is positioned at
a back side of the free layer viewed from the ABS. The MR element
further has a pair of side shields that are positioned at both
sides of the free layer and the insulating layer in a cross track
direction. The side shields contact the upper shield on the sides
of the free layer and the insulating layer in the cross track
direction.
Inventors: |
WATANABE; Hisayoshi; (Tokyo,
JP) ; DEGAWA; Naomichi; (Tokyo, JP) ; MIURA;
Satoshi; (Tokyo, JP) ; HASHINO; Masachika;
(Tokyo, JP) ; HIRAKI; Tetsuya; (Tokyo, JP)
; KOJIMA; Hidekazu; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TDK Corporation |
Tokyo |
|
JP |
|
|
Family ID: |
59561642 |
Appl. No.: |
15/044559 |
Filed: |
February 16, 2016 |
Current U.S.
Class: |
360/99.08 |
Current CPC
Class: |
G11B 5/3912 20130101;
G11B 2005/3996 20130101 |
International
Class: |
G11B 5/39 20060101
G11B005/39 |
Claims
1. (canceled)
2. (canceled)
3. A magneto-resistive effect element comprising: an upper shield
that is magnetized in a cross track direction, a lower shield that
is positioned at an interval in a down track direction relative to
the upper shield; and a multilayer film that is positioned between
the upper shield and the lower shield, and that faces an air
bearing surface (ABS), wherein the multilayer film comprises: a
free layer having a magnetization direction that fluctuates against
an external magnetic field, a pinned layer having a magnetization
direction that is pinned against the external magnetic field, a
nonmagnetic spacer layer that is positioned between the free layer
and the pinned layer, and an insulating layer that is positioned at
a back side of the free layer viewed from the ABS; and the
magneto-resistive effect element further comprises a pair of side
shields that are positioned on both sides of the free layer and the
insulating layer in the cross track direction, and that include
soft magnetic layers, wherein the soft magnetic layer of the side
shields contact the upper shield on the sides of the free layer and
the insulating layer in the cross track direction, the multilayer
film comprises an antiferromagnetic layer that pins a magnetization
of the pinned layer, the pinned layer and the antiferromagnetic
layer extend in a height direction beyond a first surface, which is
away from the ABS in the height direction, by a distance that is
equal to a height of the free layer in the height direction, and at
least a portion of the pinned layer and at least a portion of the
antiferromagnetic layer have greater length than the free layer in
the cross track direction, respectively.
4. A magneto-resistive effect element, comprising: an upper shield
that is magnetized in a cross track direction, a lower shield that
is positioned at an interval in a down track direction relative to
the upper shield; and a multilayer film that is positioned between
the upper shield and the lower shield, and that faces an air
bearing surface (ABS), wherein the multilayer film comprises: a
free layer having a magnetization direction that fluctuates against
an external magnetic field, a pinned layer having a magnetization
direction that is pinned against the external magnetic field, a
nonmagnetic spacer layer that is positioned between the free layer
and the pinned layer, and an insulating layer that is positioned at
a back side of the free layer viewed from the ABS; and the
magneto-resistive effect element further comprises a pair of side
shields that are positioned on both sides of the free layer and the
insulating layer in the cross track direction, and that include
soft magnetic layers, wherein the soft magnetic layer of the side
shields contact the upper shield on the sides of the free layer and
the insulating layer in the cross track direction, the multilayer
film comprises an antiferromagnetic layer that pins a magnetization
of the pinned layer, the pinned layer and the antiferromagnetic
layer extend in a height direction beyond a first surface, which is
away from the ABS in the height direction, by a distance that is
equal to a height of the free layer in the height direction, and
lengths of the pinned layer and the antiferromagnetic layer in the
cross track direction are increased as the pinned layer and the
antiferromagnetic layer extend from the ABS in the height
direction, respectively.
5. A magneto-resistive effect element, comprising: an upper shield
that is magnetized in a cross track direction, a lower shield that
is positioned at an interval in a down track direction relative to
the upper shield; and a multilayer film that is positioned between
the upper shield and the lower shield, and that faces an air
bearing surface (ABS), wherein the multilayer film comprises: a
free layer having a magnetization direction that fluctuates against
an external magnetic field, a pinned layer having a magnetization
direction that is pinned against the external magnetic field, a
nonmagnetic spacer layer that is positioned between the free layer
and the pinned layer, and an insulating layer that is positioned at
a back side of the free layer viewed from the ABS; and the
magneto-resistive effect element further comprises a pair of side
shields that are positioned on both sides of the free layer and the
insulating layer in the cross track direction, and that include
soft magnetic layers, wherein the soft magnetic layer of the side
shields contact the upper shield on the sides of the free layer and
the insulating layer in the cross track direction, the multilayer
film comprises an antiferromagnetic layer that pins a magnetization
of the pinned layer, the pinned layer and the antiferromagnetic
layer extend in a height direction beyond a first surface, which is
away from the ABS in the height direction, by a distance that is
equal to a height of the free layer in the height direction, the
pinned layer and the antiferromagnetic layer comprise: a first
portion that faces the ABS, a second portion that is connected to
the first portion, and that is farther away from the ABS than the
first portion, and a third portion that is connected to the second
portion, and that is farther away from the ABS than the second
portion; a length of the first portion in the cross track direction
is constant in the height direction, a length of the second portion
in the cross track direction is increased at a first ratio as the
second portion extends from the ABS in the height direction, and a
length of the third portion in the cross track direction is
increased at a second ratio, which is greater than the first ratio,
as the third portion extends from the ABS in the height
direction.
6. The magneto-resistive effect element according to claim 5,
wherein the first portion, the second portion and the third portion
define a common center line extending in the height direction and
symmetrical shapes relative to the center line; and an inclination
angle of the external edge of the second portion in the cross track
direction at a boundary of the first portion and the second portion
is greater than an inclination angle of the external edge of the
third portion relative to the cross track direction at a boundary
of the second portion and the third portion.
7. A magneto-resistive effect element, comprising: an upper shield
that is magnetized in a cross track direction, a lower shield that
is positioned at an interval in a down track direction relative to
the upper shield; and a multilayer film that is positioned between
the upper shield and the lower shield, and that faces an air
bearing surface (ABS), wherein the multilayer film comprises: a
free layer having a magnetization direction that fluctuates against
an external magnetic field, a pinned layer having a magnetization
direction that is pinned against the external magnetic field, a
nonmagnetic spacer layer that is positioned between the free layer
and the pinned layer, and an insulating layer that is positioned at
a back side of the free layer viewed from the ABS; and the
magneto-resistive effect element further comprises a pair of side
shields that are positioned on both sides of the free layer and the
insulating layer in the cross track direction, and that include
soft magnetic layers, wherein the soft magnetic layer of the side
shields contact the upper shield on the sides of the free layer and
the insulating layer in the cross track direction, the multilayer
film comprises an antiferromagnetic layer that pins a magnetization
of the pinned layer, the pinned layer and the antiferromagnetic
layer extend in a height direction beyond a first surface, which is
away from the ABS in the height direction, by a distance that is
equal to a height of the free layer in the height direction, the
pinned layer and the antiferromagnetic layer comprise a greater
length in the cross track direction and the height direction than
that of the free layer, respectively.
8. The magneto-resistive effect element according to claim 7,
wherein the pinned layer and the antiferromagnetic layer comprise
the same rectangular shape within a plane determined with the cross
track direction and the height direction.
9. A magneto-resistive effect element, comprising: an upper shield
that is magnetized in a cross track direction, a lower shield that
is positioned at an interval in a down track direction relative to
the upper shield; and a multilayer film that is positioned between
the upper shield and the lower shield, and that faces an air
bearing surface (ABS), wherein the multilayer film comprises: a
free layer having a magnetization direction that fluctuates against
an external magnetic field, a pinned layer having a magnetization
direction that is pinned against the external magnetic field, a
nonmagnetic spacer layer that is positioned between the free layer
and the pinned layer, and an insulating layer that is positioned at
a back side of the free layer viewed from the ABS; and the
magneto-resistive effect element further comprises a pair of side
shields that are positioned on both sides of the free layer and the
insulating layer in the cross track direction, and that include
soft magnetic layers, wherein the soft magnetic layer of the side
shields contact the upper shield on the sides of the free layer and
the insulating layer in the cross track direction, the multilayer
film comprises an antiferromagnetic layer that pins a magnetization
of the pinned layer, the pinned layer and the antiferromagnetic
layer extend in a height direction beyond a first surface, which is
away from the ABS in the height direction, by a distance that is
equal to a height of the free layer in the height direction, a
surface of the antiferromagnetic layer facing the ABS is on a
second surface that is away from the ABS in the height direction by
a distance that is greater than the height of the free layer in the
height direction; the pinned layer comprises: a first portion that
extends to the first surface from the ABS, a second portion that
extends from the first surface to the second surface, and a third
portion that extends from the second surface in a direction away
from the ABS; a width in the cross track direction is increased, in
order, of the first portion, the second portion and the third
portion.
10-13. (canceled)
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a magneto-resistive effect
element (MR element), and particularly relates to an MR element
where a side shield is magnetically linked with an upper
shield.
[0003] 2. Description of the Related Art
[0004] A magneto-resistive effect element (MR element) has a
multilayer film indicating a magneto-resistive effect and a pair of
magnetic shields that interpose the multilayer film in the down
track direction (a track circumferential direction or a lamination
direction of the multilayer film). As the multilayer film, a
spin-valve film is generally used. The spin-valve film has a free
layer where its magnetization direction varies relative to an
external magnetic field, a pinned layer where its magnetization
direction is pinned against the external magnetic field, and a
nonmagnetic spacer layer that is positioned between the free layer
and the pinned layer and that generates a magneto-resistive effect.
The magnetic shields block a magnetic field that is emitted from a
bit, which is adjacent to a bit subject to reading in a recording
medium in the down track direction, and functions as an electrode
that applies a sense current to the multilayer film.
[0005] In general, in a spin-valve type MR element, the
magnetization direction of the pinned layer is pinned to a
direction that is orthogonal to an air bearing surface (ABS)
(hereafter, referred to as the height direction) regardless of
whether or not there is any external magnetic field. In the
meantime, the magnetization direction of the free layer is designed
to be oriented in a cross track direction (a direction that is
orthogonal to the down track direction and the height direction)
that is orthogonal to that of the pinned layer when no external
magnetic field exists. In order to apply magnetization in such a
direction to the free layer, a pair of bias magnetic field
application layers that apply a bias magnetic field to the free
layer are disposed on both sides of the free layer in the cross
track direction.
[0006] The bias magnetic field application layer is generally
formed with an antiferromagnetic layer, but a bias magnetic field
application layer formed with a soft magnetic layer is disclosed in
U.S. Pat. No. 7,692,901. The bias magnetic field application layer
formed with a soft magnetic layer functions as a shield in the
cross track direction, and blocks magnetic fields that are emitted
from a bit which is adjacent to a bit subject to reading in a
recording medium in the cross track direction. Consequently, it is
easier to enhance recording density in the cross track direction.
In order to allow the soft magnetic layer to function as a bias
magnetic field application layer, the upper shield is magnetized in
the cross track direction and the bias magnetic field application
layer is magnetically linked with the upper shield. Such a bias
magnetic field application layer is also referred to as a side
shield or a junction shield.
[0007] Further it is anticipated that the characteristics of the MR
element can be improved by further stabilizing the magnetization of
the side shield.
[0008] Therefore, the objective of the present invention is to
provide a magneto-resistive effect element where magnetization of
the side shield is further stabilized.
SUMMARY OF THE INVENTION
[0009] The magneto-resistive effect element (MR element) of the
present invention has an upper shield that is magnetized in a cross
track direction, a lower shield that is positioned at an interval
in a down track direction relative to the upper shield, and a
multilayer film that is positioned between the upper shield and the
lower shield and that faces an air bearing surface (ABS). The
multilayer film has a free layer having a magnetization direction
that fluctuates relative to an external magnetic field, a pinned
layer having a magnetization direction that is pinned against the
external magnetic field, a nonmagnetic spacer layer positioned
between the free layer and the pinned layer, and an insulating
layer that is positioned on the back side of the free layer viewed
from the ABS. The MR element further has a pair of side shields
positioned on both sides of the free layer and the insulating layer
in the cross track direction. The side shields contact the upper
shield on the sides of the free layer and the insulating layer in
the cross track direction.
[0010] The side shields contact not only the side of the free layer
in the cross track direction, but also the side of the insulating
layer in the cross track direction. Consequently, the side shields
are magnetically well coupled with the upper shield magnetized in
the cross track direction, stabilizing the magnetization in the
cross track direction.
[0011] The above mentioned and other objectives, characteristics
and advantages of the present invention will become clear from the
explanations below with reference to the attached drawings where
the present invention is illustrated.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a schematic cross-sectional view of a magnetic
head slider relating to one embodiment of the present
invention;
[0013] FIG. 2 is a perspective view of a magneto-resistive effect
element (MR element) relating to the first embodiment;
[0014] FIG. 3 is a plan view of a pinned layer and an
antiferromagnetic layer of the MR element shown in FIG. 2;
[0015] FIG. 4 is a perspective view of the MR element relating to
the second embodiment;
[0016] FIG. 5 is a plan view of the pinned layer and the
antiferromagnetic layer of the MR element shown in FIG. 4;
[0017] FIG. 6 is a perspective view of the MR element relating to
the third embodiment;
[0018] FIG. 7 is a plan view of the pinned layer and the
antiferromagnetic layer of the MR element shown in FIG. 6;
[0019] FIG. 8 is a perspective view of the MR element relating to
the fourth embodiment;
[0020] FIG. 9 is a plan view of the pinned layer and the
antiferromagnetic layer of the MR element shown in FIG. 8;
[0021] FIGS. 10 to 14E are conceptual views showing the
manufacturing process of the MR element relating to the first
embodiment;
[0022] FIGS. 15A to 17E are conceptual views showing the
manufacturing process of the MR element in comparative
examples;
[0023] FIGS. 18A to 18B are conceptual views showing the
manufacturing process of the MR element relating to the fourth
embodiment;
[0024] FIG. 19 is a perspective view of a head arm assembly of the
present invention;
[0025] FIG. 20 is a side view of the head stack assembly of the
present invention; and
[0026] FIG. 21 is a plan view of a magnetic recording
apparatus.
DETAILED DESCRIPTION OF THE INVENTION
[0027] Embodiments of a magneto-resistive effect element (MR
element) relating to some embodiments of the present invention and
a magnetic head slider using the MR element are explained with
reference to the drawings.
First Embodiment
[0028] FIG. 1 shows the main portion sectional view of a magnetic
head slider 1 relating to the first embodiment. Magnetic head
slider 1 has a substrate 6, a magneto-resistive effect element (MR
element) 2 formed above the substrate 6 and a recording part 4
formed above the substrate 6. An air bearing surface (hereafter,
referred to as ABS) is a surface of the magnetic head slider 1
opposing the magnetic recording medium (hard disk) M. In the
present embodiment, the MR element 2 is positioned between the
substrate 6 and the recording part 4, but the recording part 4 can
be positioned between the substrate 6 and the MR element 2.
[0029] The MR element 2 has a lower shield 21 and an upper shield
22 positioned at intervals relative to the down track direction DT,
and a spin-valve type multilayer film 3 positioned between the
lower shield 21 and the upper side shield 22. The multilayer film 3
is exposed at the ABS, and configures a part of the ABS. As
described in detail hereafter, the upper shield 22 is magnetized in
the cross track direction CT. The lower shield 21 is closer to the
substrate 6 than the upper shield 22. The lower shield 21 and the
upper shield 22 block a magnetic field that is emitted from a bit
which is adjacent in the down track direction to a bit subject to
reading in a magnetic recording medium M.
[0030] The recording part 4 is disposed over the MR element 2 via
an inter-element shield 7 formed using the sputtering method. The
recording part 4 is configured for so-called perpendicular magnetic
recording. A magnetic pole layer for writing is composed of a main
magnetic pole layer 41 and an auxiliary magnetic pole layer 44. The
magnetic pole layers are formed using the frame plating method. The
main magnetic pole layer 41 is formed of an alloy made from two or
three of Ni, Fe and Co, and extends in the height direction HT. A
coil layer 45 extending above a gap layer 42 made of an insulating
material is wound around the periphery of the main magnetic pole
layer 41. The coil layer 45 is formed using the frame plating
method. Magnetic flux is induced to the main magnetic pole layer 41
by the coil layer 45. The magnetic flux is directed inside of the
main magnetic pole layer 41, and is discharged toward the magnetic
recording medium M from the ABS. The auxiliary magnetic pole layer
44 is a magnetic layer that is magnetically coupled with the main
magnetic pole layer 41. The auxiliary magnetic pole layer 44 is
formed from an alloy made from two or three of Ni, Fe and Co. The
auxiliary magnetic pole layer 44 is disposed by branching from the
main magnetic pole layer 41, and is opposed to the main magnetic
pole layer 41 on the ABS via the gap layer 42 and the coil
insulating layer 43.
[0031] The configuration of the MR element 2 is now explained with
reference to FIG. 2. The multilayer film 3 has a free layer 35
where its magnetization direction fluctuates relative to the
external magnetic field, a pinned layer 33 where its magnetization
direction is pinned against external magnetization, and a spacer
layer 34 positioned between the free layer 35 and the pinned layer
33. An insulating layer 36 is disposed at the back side of the free
layer 35 viewed from the ABS at the front side of the drawing. The
insulating layer 36 is formed of Al.sub.2O.sub.3, SiO.sub.2 or the
like. A protective layer (not shown) for protecting the multilayer
film 3 is formed between the free layer 35 and the upper shield 22.
The protective layer is formed with a single layer film of Ru or
Ta, or with a two-layer film of Ru and Ta. The free layer 35 is
positioned closer to the upper shield 22 than the pinned layer 33.
The free layer 35 is made from CoFe, and may contain Ni. The spacer
layer 34 can be formed with various nonmagnetic layers, such as
copper, aluminum oxide, gallium oxide, magnesium oxide or zinc
oxide, providing a magneto-resistive effect.
[0032] The pinned layer 33 is formed with an inner pinned layer
33c, an outer pinned layer 33a, an exchange-coupled layer 33b. The
inner pinned layer 33c is positioned so as to contact the spacer
layer 34. The outer pinned layer 33a is positioned closer to the
lower shield 21 than the inner pinned layer 33c. The outer pinned
layer 33a and the inner pinned layer 33c are made from CoFe, and
may contain Ni. The exchange-coupled layer 32b is disposed between
the inner pinned layer 33c and the outer pinned layer 33a, and
exchange-couples the inner pinned layer 33c with the outer pinned
layer 33a. The exchange-coupled layer 32b is formed with an Ru
layer with approximately 0.8 nm of film thickness. The
magnetization direction of the inner pinned layer 33c is pinned to
the antiparallel orientation of the magnetization direction of the
outer pinned layer 33a by the exchange-coupled layer 32b.
[0033] The multilayer film 3 further has an antiferromagnetic layer
32 that is positioned closer to the lower shield 21 than the outer
pinned layer 33a and that is exchange-coupled with the outer pinned
layer 33a. The antiferromagnetic layer 32 contacts the pinned layer
33 on the opposite side of the spacer layer 34. The
antiferromagnetic layer 32 is formed from IrMn, and is magnetized
in the cross track direction CT. The antiferromagnetic layer 32 can
be formed of any of FeMn, NiMn, PtMn or PdPtMn, as well. The
antiferromagnetic layer 32 is exposed on the ABS, and configures a
portion of the ABS. The antiferromagnetic layer 32 contacts the
outer pinned layer 33a, and magnetizes the outer pinned layer 33a
in the height direction HT. A seed layer 31 is disposed between the
antiferromagnetic layer 32 and the lower shield 21. The seed layer
31 is made from a two-layer film of an Ru layer contacting the
lower shield 21 and a Ta layer contacting the antiferromagnetic
layer 32. The seed layer 31 is disposed so as to obtain excellent
exchange-coupling between the antiferromagnetic layer 32 and the
outer pinned layer 33a to be laminated on the seed layer 31.
[0034] The shapes of the free layer 35, the pinned layer 33 and the
antiferromagnetic layer 32 are further explained with reference to
FIG. 3. FIG. 3 is a plan view of the free layer 35, the pinned
layer 33 and the antiferromagnetic layer 32 viewed from the upper
shield 22 side in the down track direction DT. In order to specify
the range of the pinned layer 33, the free layer 35 is illustrated
only with a visible outline. The inner pinned layer 33c, the
exchange-coupled layer 32b and the outer pinned layer 33a
configuring the pinned layer 33 all have the same shape. The
antiferromagnetic layer 32 has the same rectangular shape as the
pinned layer 33 within a plane determined by the cross track
direction CT and the height direction HT, and is formed in the same
position as the pinned layer 33 viewed from the down track
direction DT. Therefore, in FIG. 3, the ranges of the pinned layer
33 and the antiferromagnetic layer 32 completely match. The spacer
layer 34 not shown in FIG. 3 has the same shape as the free layer
35, and is formed in the same position as the free layer 35 viewed
from the down track direction DT. Therefore, in FIG. 3, the ranges
of the free layer 35 and the spacer layer 34 completely match. In
the explanation below, the height of the free layer 35 in the
height direction HT, i.e., the distance between the surface 35a of
the free layer 35 at the ABS side and the back surface 35b of the
surface 35a relative to the height direction HT is referred to as
MRh. Further, a surface that is at the equal distance from the ABS
as MRh in the height direction HT is referred to as the first
surface SI.
[0035] The pinned layer 33 and the antiferromagnetic layer 32 have
greater length in the height direction HT than the free layer 35.
In other words, the pinned layer 33 and the antiferromagnetic layer
32 extend in the height direction HT beyond the first surface SI
viewed from the ABS. Further, the pinned layer 33 and the
antiferromagnetic layer 32 have greater length in the cross track
direction CT and the height direction HT than the free layer 35.
Since the pinned layer 33 contacts the antiferromagnetic layer 32
over a large area, the magnetization direction is solidly pinned by
the antiferromagnetic layer 32, lowering the possibility of the
magnetization direction reversing.
[0036] The lower shield 21 is formed of, for example, NiFe
(permalloy). The upper shield 22 is composed of a soft magnetic
layer 23 and an anisotropy application layer 24 that gives
anisotropy to the soft magnetic layer 23. The anisotropy
application layer 24 is positioned on the opposite side of the
multilayer film 3 across the soft magnetic layer 23. The soft
magnetic layer 23 is formed of, for example, NiFe, and the
anisotropy application layer 24 can be formed from an
antiferromagnetic body, such as IrMn, PtMn, RuRhMn or FeMn. The
anisotropy application layer 24 can also be formed of a hard
magnetic body, such as CoPT, CoCrPt or FePt. The soft magnetic
layer 23 is exchange-coupled with the anisotropy application layer
24, and is magnetized in the cross track direction CT.
[0037] A pair of side shields 37 are disposed on both sides of the
free layer 35 and the insulating layer 36 in the cross track
direction CT. The side shields 37 are disposed not only on the
sides of the free layer 35 in the cross track direction CT, but
also on the sides of the insulating layer 36 in the cross track
direction CT. The side shields 37 are formed of a soft magnetic
body, such as NiFe. The side shields 37 block an external magnetic
field that is emitted from a bit adjacent in the cross track
direction CT to the bit subject to reading in the magnetic
recording medium M, and the free layer 35 is designed to detect
only the magnetic field that is emitted from the bit subject to
reading. Therefore, the side shields 37 can reduce effective track
width, preventing side lobes (a phenomenon generating a local
maximum point of an output at a position away from the track center
in the cross track direction CT).
[0038] Consequently, the free layer 35 is blocked on both sides in
the down track direction DT by the upper shield 22 and the lower
shield 21, and is blocked on both sides in the cross track
direction CT by the pair of side shields 37. Therefore, information
that is recorded in the magnetic recording medium M in the down
track direction DT and the cross track direction CT with high
density can be easily read.
[0039] The side shields 37 contact the soft magnetic layer 23 of
the upper shield 22. Consequently, the side shields 37 are
magnetized in the same direction as the soft magnetic layer 23. The
side shields 37 contact the upper shield 22 not only at the side of
the free layer 35 in the cross track direction CT, but also at the
side of the insulating layer 36 in the cross track direction CT.
Therefore, the side shields 37 contact the soft magnetic layer 23
in a wider range, and are solidly and stably magnetized in the
cross track direction CT. As a result, characteristics, such as
linearity of a readout signal of the MR element 2, tolerability to
reversal of the pinned layer in the magnetization direction, and
tolerability to an external magnetic field of the MR element 2, can
be improved. The side shields 37 apply a bias magnetic field in the
cross track direction CT to the free layer 35, and uniformly
magnetize the free layer 35 in a single direction. When there is no
external magnetic field, the magnetization direction of the free
layer 35 is orientated in the cross track direction CT by a bias
magnetic field.
[0040] The lower shield 21 and the upper shield 22 function as
electrodes to supply a sense current to the multilayer film 3. A
sense current flows into the multilayer film 3 due to voltage
applied between the lower shield 21 and the upper shield 22. An
insulating film (not shown) for preventing bypass of the sense
current is disposed between the side shields 37 and the multilayer
film 3. When the external magnetic field emitted from the magnetic
recording medium M is applied to the free layer 35, the
magnetization direction of the free layer 35 rotates within the
plane of the free layer in a predetermined direction by a
predetermined angle, according to the orientation and intensity of
the external magnetic field. The magnetization direction of the
free layer 35 forms a relative angle according to the orientation
and intensity of the external magnetic field relative to the
magnetization direction of the inner pinned layer 33c,
spin-dependent scattering of conductive electrons vary according to
the relative angle and magneto-resistive change occurs. The
magnetic field from the magnetic recording medium M in a position
opposing the free layer 35 varies as the magnetic recording medium
M rotates. The change in the magnetic field is detected as a change
in the electrical resistance of the sense current based upon the
magneto-resistive effect. The MR element 2 reads magnetic
information written into the magnetic recording medium M by using
this principle.
[0041] Next, a method for making the multilayer film 3 is
described.
[0042] At first, as shown in FIG. 2, the lower shield 21 is made
using a plating method, and the seed layer 31, the
antiferromagnetic layer 32 and the pinned layer 33 (the outer
pinned layer 33a, the exchange-coupled layer 33b and the
inner-pinned layer 33c) are sequentially formed on the lower shield
21 using the sputtering method. In addition, the spacer layer 34
and the free layer 35 are formed within the same range as the
pinned layer 33 using the sputtering method.
[0043] Next, MRh of the free layer 35 is formed, and the insulating
layer 36 is formed on the back surface of the free layer 35. FIG.
10 is a magnified plan view of a portion of a wafer, and
corresponds to a range of making of the magnetic head slider 1. In
the drawing, the upper side of the ABS is a portion which becomes
the magnetic head slider 1, and the lower side is a boundary
portion with the adjacent magnetic head slider 1. Individual
magnetic head sliders 1 are clipped out by cutting a wafer at the
boundary, thereby forming the ABS of the magnetic head slider 1.
The explanation hereafter is mainly for the upper side of the ABS.
First, the range from the first surface S1 of the free layer 35 to
the ABS side is covered with a resist. Next, portions of the free
layer 35 and the spacer layer 34 that are not covered with the
resist are removed by milling, exposing the pinned layer 33. Next,
the insulating film 36 is formed on the resist and the exposed
pinned layer 33 using the sputtering method. Then, the resist is
removed. As shown in FIG. 10, MRh of the free layer 35 is formed by
this process (see FIG. 11C, as well) and the insulating layer 36 is
formed on the back surface of the free layer 35 viewed from the
ABS.
[0044] Next, the cross track direction length Tw of the free layer
35 is shaped, along with the insulating layer 36. First, as shown
in FIG. 11A, a resist 51 is formed on the free layer 35 and the
insulating layer 36. FIG. 11A is a plan view similar to FIG. 10.
The resist 51 has the shape that matches the final shape of the
free layer 35, the spacer layer 34 and the insulating layer 36, and
the cross track direction length of the resist 51 is gradually
increased to the direction away from the ABS in the height
direction HT. FIGS. 11B, 11C and 11D are cross-sectional views
along the line B-B, the line C-C and the line D-D of FIG. 11A,
respectively. The line-B-B matches the ABS. The line C-C is a line
that passes through the center of the free layer 35 in connection
with the cross track direction CT, and the line D-D offsets the
line C-C in the cross track direction CT. The line A-A of FIG. 11C
indicates the ABS. The resist 51 is formed on the resist 52, and a
void 53 is arranged between the free layer 35 and the insulating
layer 36 by the resist 52.
[0045] Next, as shown in FIGS. 12A to 12E, the cross track
direction length Tw of the free layer 35 and the spacer 34 is
shaped by milling, thereby molding the insulating layer 36. FIGS.
12A to 12D are drawings similar to FIGS. 11A to 11D, respectively.
FIG. 12E is a cross-sectional view along the line E-E of FIGS. 12A
and 12C, and indicates a cross section of the insulating layer 36
behind the free layer 35. The portions of the free layer 35 and the
spacer layer 34 that are not covered with the resist 51 are
removed, and the cross track direction length Tw is formed as shown
in FIG. 12B. Further, the insulating layer 36 is removed along the
resist 51 and shaped to be the predetermined shape.
[0046] If the milling rate of the insulating layer 36 is smaller
than that of the free layer 35 and the spacer layer 34, as shown in
FIG. 12F showing a cross section along the line D-D similar to FIG.
12D, the insulating layer 36 may remain. If a post process is
conducted where a height difference remains due to the insulating
layer 36, the height difference is also generated even in the side
shields 37 and the upper shield 22, and the magnetization direction
of the upper shield 22 can be rotated from the cross track
direction CT. Therefore, at the end of the Tw formation process, as
shown in FIG. 12D, it is desirable to completely or sufficiently
remove the insulating layer 36. Due to this reason, it is
preferable to use SiO.sub.2 having a milling rate closer to that of
the free layer 35 and the spacer layer 34 (metallic layer) as the
insulating layer. However, SiO.sub.2 may demonstrate insufficient
adhesion with the pinned layer 33 which is located below and is a
metal layer, and there is a possibility that it peels from the
pinned layer 33. Consequently, the insulating layer 36 can have a
two-layer configuration composed of a lower layer of
Al.sub.2O.sub.3 that has excellent adhesion with a metallic layer,
and an upper layer of SiO.sub.2 where its milling rate is closer to
that of the metallic layer. If the entire insulating layer 36 is
formed of Al.sub.2O.sub.3, since Al.sub.2O.sub.3 is soluble into a
developing solution of the resist, it is desirable to cover the
Al.sub.2O.sub.3 layer with a protective film, such as Ta, Ti or
Ru.
[0047] After the exposed portions of the free layer 35 and the
insulating layer 36 are removed by milling, a protective film is
formed on the upper surface of the pinned layer 33 and the side
surfaces of the free layer 35 and the space layer 34, and as shown
in FIGS. 13A to 13E, the side shields 37 are formed using the
sputtering method. FIGS. 13A to 13E are drawings similar to FIGS.
12A to 12E, respectively. Subsequently, the resist 51 is removed
with a developing solution, forming the upper shield 22. The
situation at this time is shown in FIGS. 14A to 14E. FIGS. 14A to
14E are drawings similar to FIGS. 12A to 12E, respectively.
[0048] Subsequently, the recording part 4 is made using a known
method, and a wafer is cut off to be separated to individual
magnetic slider 1. Subsequently, the magnetic head slider 1 is
completed by polishing the ABS.
[0049] As explained above, in the present embodiment, MRh is
formed, and then, the cross track direction length Tw of the free
layer 35 is formed. In other words, the MRh formation, production
of the insulating layer 36, Tw formation and production of the side
shields 37 are conducted in respective order. In the meantime, when
the cross track direction length Tw of the free layer 35 is formed
and then MRh is formed, the Tw formation, the production of the
side shields 37, the MRh formation and the production of the
insulating layer 36 are conducted in respective order. It is
necessary to consecutively conduct the Tw formation and the
production of the side shields 37, and it is necessary to
consecutively conduct the MRh formation and the production of the
insulating layer 36, as well. In the case of forming MRh after the
formation of Tw, the situation at the moment of completion of the
Tw formation and the production of side shields 37 is shown in
FIGS. 15A to 15E. Subsequently, the resist 54 is formed, and MRh is
formed. The situation at this time is shown in FIGS. 16A to 16E. In
the MRh formation process, a portion in the side shields 37 that is
not covered by the resist 54 is removed by milling, and then, the
insulating layer 36 is formed. Subsequently, the resist 54 is
removed and the upper shield 22 is formed. The situation at this
time is shown in FIG. 17A to 17E.
[0050] Here, compared between FIG. 14B and FIG. 17B, the side
shields 37 contact the upper shield 22 on the ABS. However,
compared between FIG. 14E and 17E, the side shields 37 do not
contact the upper shield 22 at the recessed side of the free layer
35 viewed from the ABS. In other words, the side shields 37 and the
upper shield 22 are divided via the insulating layer 36. This is
because, as shown in FIGS. 16D and 16E, the side shields 37
partially remain at the recessed side of the free layer 35. Since
the resist 51 functions as a shielding substance in the film
formation process of the side shields 37, as shown in FIG. 15E, the
side shields 37 are formed higher than the region immediately under
the resist 51 at the region away from the resist 51. Further, even
on the occasion of milling, the resist 51 becomes a shielding
substance, and the side shields 37 are not uniformly removed.
Consequently, the portion(s) of the side shields 37 with thicker
film thickness will not be removed but remains.
[0051] In the meantime, in the present embodiment, since the
insulating layer 36 is formed at first and the side shields 37 and
the upper shield 22 are sequentially formed, the side shields 37
and the upper shield 22 will never be divided by the insulating
layer 36 in principle. Therefore, the side shields 37 and the upper
shields 22 make contact at the side of the insulating layer 36, as
well.
Second Embodiment
[0052] The configuration of a magneto-resistive effect element (MR
element) 102 relating to the second embodiment is explained
hereafter with reference to FIGS. 4 and 5. FIGS. 4 and 5 correspond
to FIGS. 2 and 3 of the first embodiment, respectively. Elements
marked with the same symbols in the first embodiments are the same
as those in the first embodiment. In the present embodiment, the
point that side shields 137 also exist at the sides of a pinned
layer 133 and an antiferromagnetic layer 132 is different from the
first embodiment.
[0053] The pinned layer 133 and the antiferromagnetic layer 132 in
a multilayer film 103 have a funnel-shaped planar shape that is
symmetrically formed relative to a center line CL extending in the
height direction HT. The shape of the pinned layer 133 and that of
the antiferromagnetic layer 132 are the same. The length of the
pinned layer 133 and that of the antiferromagnetic layer 132 in the
cross track direction CT are increased toward the height direction
HT from the ABS. A seed layer 131 also has the same shape as the
pinned layer 133 and the antiferromagnetic layer 132, but it may
also be rectangular similar to the first embodiment.
[0054] The pinned layer 133 and the antiferromagnetic layer 132
have a first portion 151 facing the ABS, a second portion 152 that
is connected to the first portion 151, and that is farther away
from the ABS than the first portion 151, and a third portion 153
that is connected to the second portion 152, and that is farther
away from the ABS than the second portion 152. The first portion
151, the second portion 152 and the third portion 153 have
symmetrical shapes relative to the common center line CL extending
in the height direction HT. The cross track direction length of the
first portion 151 is consistent in the height direction HT, and is
substantially equal to the cross track direction length Tw of the
free layer 35. The cross track direction length of the second
portion 152 is greater than the cross track direction length Tw of
the free layer 35, and is increased as the second portion 152
extends from the ABS. The cross track direction length of the
second portion 152 is increased in the first ratio as the second
portion 152 extends from the ABS in the height direction HT. The
cross track direction length of the third portion 153 is increased
in the second ratio, which is greater than the first ratio, as the
third portion 153 extends from the ABS. In other words, an
inclination angle 81 of the outer edge of the second portion 152
relative to the cross track direction CT at the boundary between
the first portion 151 and the second portion 152 is greater than an
inclination angle .theta.2 of the outer edge of the third portion
153 relative to the cross track direction CT at the boundary
between the second portion 152 and the third portion 153.
[0055] Since the pinned layer 133 and the antiferromagnetic layer
132 are formed to be greater than the free layer 35 even in the
present embodiment, the pinned layer 133 is magnetically solidly
coupled with the antiferromagnetic layer 132, and the magnetization
direction is stabilized. Therefore, the reversal of the
magnetization direction of the pinned layer 133 is difficult to
occur.
[0056] The free layer 35 and the pinned layer 133 may be arranged
upside down in the down track direction DT relative to the space
layer 34. Specifically, the free layer 35, the spacer layer 34, an
inner pinned layer 133c, an exchange-coupled layer 133b, an outer
pinned layer 133a, and the antiferromagnetic layer 132 may be
laminated in respective order from the lower shield 21 to the upper
shield 22.
[0057] The MR element of the present embodiment can be produced
substantially similar to that in the first embodiment. However, the
lateral part in the cross track direction CT from the free layer 35
to the seed layer 131 is removed in the MRh formation process, and
the removed portion is substituted by the side shields 137.
Specifically, in FIGS. 12A to 12E, portions up to the
antiferromagnetic layer 32 are removed, and an upper surface of the
lower shield 21 is exposed. Subsequently, in FIGS. 13A to 13E, the
side shields 137 are formed on the upper surface of the lower
shield 21 and on the sides of the free layer 35, the spacer layer
34, the pinned layer 33 and the antiferromagnetic layer 32.
[0058] Furthermore, in the film configuration of the present
embodiment, when the cross track direction length Tw of the free
layer 35 is formed, and then MRh is formed, a portion of the pinned
layer 133 is likely to be partially removed due to milling in the
MRh formation process. In other words, since many MR elements are
formed on the wafer, particles may drop obliquely in the film
formation process of the side shield 137 depending upon the
position of the MR elements on the wafer. In this case, as shown in
FIG. 15F, a phenomena where the side shields 137 are formed so as
to cover one end of the apex of the free layer 35, but the side
shields would not be sufficiently formed at the other end could
happen. In this situation, when the side shields 137 are removed by
milling for the purpose of the MRh formation, there is a
possibility where a portion of the pinned layer 133 that is not
covered with the side shield 137 is trimmed obliquely, thus it
adversely affects the characteristics of the MR element. As
described above, the formation of the cross track direction length
Tw of the free layer 35 after MRh is formed enables avoidance of
this problem.
Third Embodiment
[0059] With reference to FIGS. 6 and 7, configuration of a
magneto-resistive effect element (MR element) 202 relating to the
third embodiment is explained. FIGS. 6 and 7 correspond to FIGS. 2
and 3 of the first embodiment, respectively. The present embodiment
is the same as the second embodiment except for the point where the
antiferromagnetic layer 232 is recessed from the ABS. In FIG. 7, a
symbol 254 represents a common region of the antiferromagnetic
layer 232 and the pinned layer 233, and the symbol 255 represents a
region where the pinned layer 233 exists, but the antiferromagnetic
layer 232 does not exist. A surface 232a of the antiferromagnetic
layer 232 facing the ABS is situated on a second surface S2, which
is away from the ABS in the height direction HT by a distance ARh
that is greater than the height MRh of the free layer 35 in the
height direction HT.
[0060] An inner shield 239 is arranged at the ABS side of the
recessed antiferromagnetic layer 232. Similarly, the seed layer 231
is also recessed from the ABS, and an inner shield 238 is arranged
at the ABS side of a seed layer 231. A not-shown insulating layer
is arranged between the antiferromagnetic layer 232 and the inner
shield 239, and between the seed layer 231 and the inner shield
238, respectively. The inner shields 238 and 239 are formed of the
same material as the lower shield 21 and are integrated with the
lower shield 21. The inner shields 238 and 239 function as a part
of the lower shield 21. Therefore, a read gap of the MR element 202
is determined by the upper shield 22 and the inner shield 239, and
magnetic data recorded with high density on a magnetic recording
medium M can be read. Further, IrMn configuring the
antiferromagnetic layer 232 is easily deteriorated by heat, and,
the vicinity of the ABS tends to be high temperature because a
sense current flows. Since the antiferromagnetic layer 232 in the
present embodiment is retracted from the ABS, it is difficult to be
exposed to high temperature due to the current. Further, if the
antiferromagnetic layer 232 faces the ABS, it tends to be corroded.
Since the antiferromagnetic layer 232 in the present embodiment is
protected by the inner shield 238, the reliability of the MR
elements is enhanced.
[0061] The present embodiment can be made similar to the first and
second embodiments. The inner shields 238 and 239 can be made using
a known general technique. For example, the antiferromagnetic layer
232 and the seed layer 231 are formed, and these layers 231 and 232
at the ABS side are partially removed by a photoresist and milling,
soft magnetic layers to be the inner shields 238 and 239 are formed
and the photoresist is removed.
Fourth Embodiment
[0062] A configuration of the magneto-resistive effect element (MR
element) 303 relating to the fourth embodiment is explained
hereafter with reference to FIGS. 8 and 9. FIGS. 8 and 9 correspond
to FIGS. 2 and 3 of the first embodiment, respectively. The present
embodiment is the same as the third embodiment except for the point
where the shape of the pinned layer 333 is different. An
antiferromagnetic layer 332 is recessed from the ABS. The pinned
layer 333 has a first portion 351 extending from the ABS to the
first surface, a second portion 352 extending from the first
surface to the second surface, and a third portion 353 extending
from the second surface in a direction away from the ABS, and the
width in the cross track direction CT is increased in the first
portion 351, the second portion 352 and the third portion 353 in
respective order. The antiferromagnetic layer 332 has only the
third portion 353.
[0063] The pinned layer 333 with such shape can be formed as
mentioned below. FIGS. 18A and 18B are cross-sectional views along
the line D-D in FIG. 11A similar to FIG. 11B. On the occasion of
the MRh formation process, as shown in FIG. 18A, a portion of the
free layer 35 and the spacer layer 34 that is not covered with the
resist 55 is removed, and consequently, an insulating layer 336 is
formed. On this occasion, the insulating layer 336 is formed so as
to have thickness enough to remain in the Tw formation process. As
a result, on the cross-section D-D, while the pinned layers 133 and
233 happen to be removed in the second and third embodiments, the
pinned layer 333 protected by the insulating layer 366 remains at
the back side of the MRh as shown in FIG. 18B in the present
embodiment.
(Head Gimbal Assembly (HGA), Recording Apparatus)
[0064] FIG. 19 is a perspective view of a head gimbal assembly
(HGA) 421. The HGA 421 is provided with the magnetic head slider 1
where the MR 2, 102, 202 or 302 is mounted, and a suspension 420
that elastically supports the magnetic head slider 1. The
suspension 420 has a plate-spring-state load beam 422 formed of
stainless steel, a flexure 423 disposed at one end of the load beam
422, and a base plate 424 disposed at the other end of the load
beam 422. The magnetic head slider 1 is joined to the flexure 423,
and an adequate degree of freedom is provided by the flexure 423. A
gimbal part (not shown) for maintaining a constant posture of the
magnetic head slider 1 is placed in a portion in the flexure 423
where the magnetic head slider 1 is mounted.
[0065] The HGA 421 is mounted in an arm 430. The arm 430 moves the
magnetic head slider 1 to the cross track direction CT. A base
plate 424 is mounted at one end of the arm 430. A coil 431 to be a
part of a voice coil motor is mounted at the other end of the arm
430. A bearing 433 is disposed in the intermediate part of the arm
430. The arm 430 is supported to be rotatable by a shaft 434
mounted to the bearing 433. The arm 430 and the voice coil motor
driving the arm 430 configure an actuator.
[0066] FIG. 20 is a side view of a head stack assembly 450. The
head stack assembly 450 has a carriage 451 having a plurality of
arms 430 and HGAs 421 mounted to the arms 430, respectively. The
HGAs 421 are mounted to the arms 430 so as to align at intervals
from each other in the height direction HT. A pair of permanent
magnets 432 are arranged at opposite positions across the coil
431.
[0067] FIG. 21 is a plan view of a magnetic recording apparatus. A
head stack assembly 450 is incorporated into a magnetic recording
apparatus 460. The magnetic recording apparatus 460 has a plurality
of magnetic recording media M mounted to a spindle motor 461. Two
magnetic head sliders 1 opposing across the magnetic recording
medium M are arranged per magnetic recording medium M. The head
stack assembly 450 except for the magnetic head slider 1 and the
actuator configure a positioning device, support the magnetic head
slider 1, and position the magnetic head slider 1 relative to the
magnetic recording media. The magnetic head slider 1 is moved in
the cross track direction CT of the magnetic recording media M by
the actuator and is positioned relative to the magnetic recording
media M. The magnetic head slider 1 records information to the
magnetic recording media M by a magnetic recording element and
reproduces information recorded in the magnetic record media M by
the MR element 2, 102, 202 or 302.
[0068] The desired embodiments of the present invention were
presented and explained in detail, but it should be understood that
it is possible to variously change and modify them unless departing
from a general meaning or a scope of attached claims.
* * * * *