U.S. patent application number 15/262024 was filed with the patent office on 2017-08-03 for power module.
This patent application is currently assigned to Mitsubishi Electric Corporation. The applicant listed for this patent is Mitsubishi Electric Corporation. Invention is credited to Hiroshi FUJITA, Toshinari HIRAI, Toru ICHIMURA, Tetsujiro TSUNODA, Masanori YAMAMOTO.
Application Number | 20170221984 15/262024 |
Document ID | / |
Family ID | 59387097 |
Filed Date | 2017-08-03 |
United States Patent
Application |
20170221984 |
Kind Code |
A1 |
HIRAI; Toshinari ; et
al. |
August 3, 2017 |
POWER MODULE
Abstract
Provided is a power module having a sufficient space in which a
large electronic component in size is disposed, and having yield
strength against external stresses, such as vibrations. A power
module includes: an insulating substrate; a semiconductor element
mounted above the insulating substrate; a sealant sealing the
insulating substrate and semiconductor element, and forming the
outer shape of the power module; and a pair of terminals disposed
on the sealant, in both ends of the sealant in a width direction of
the power module in an upright manner. The pair of terminals are
spaced from each other by a distance greater than the width of a
film capacitor being a first electronic component mounted on the
bottom surface of a control substrate being a circuit substrate
coupled to tips of the pair of terminals. The pair of terminals are
longer in a height direction than the film capacitor.
Inventors: |
HIRAI; Toshinari; (Tokyo,
JP) ; TSUNODA; Tetsujiro; (Tokyo, JP) ;
ICHIMURA; Toru; (Tokyo, JP) ; YAMAMOTO; Masanori;
(Tokyo, JP) ; FUJITA; Hiroshi; (Tokyo,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Mitsubishi Electric Corporation |
Tokyo |
|
JP |
|
|
Assignee: |
Mitsubishi Electric
Corporation
Tokyo
JP
|
Family ID: |
59387097 |
Appl. No.: |
15/262024 |
Filed: |
September 12, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 25/16 20130101;
H01L 25/04 20130101; H01L 25/072 20130101; H01L 28/40 20130101 |
International
Class: |
H01L 49/02 20060101
H01L049/02; H01L 29/16 20060101 H01L029/16 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 28, 2016 |
JP |
2016-014256 |
Claims
1. A power module comprising: an insulating substrate; a
semiconductor element mounted above said insulating substrate; a
sealant sealing said insulating substrate and said semiconductor
element, said sealant forming an outer shape of said power module;
and a pair of terminals disposed on said sealant, in both ends of
said sealant in a width direction of said power module in an
upright manner, wherein said pair of terminals are spaced from each
other in said width direction by a distance greater than a width of
at least one first electronic component mounted on a bottom surface
of a circuit substrate coupled to tips of said pair of terminals,
wherein said pair of terminals are longer in a height direction
than said at least one first electronic component, said height
direction being orthogonal to said width direction, and wherein
said pair of terminals are wider in said width direction than said
at least one first electronic component.
2. (canceled)
3. The power module according to claim 1, wherein said pair of
terminals are spaced from each other in said width direction by a
distance greater than a sum of a width of said at least one first
electronic component and a width of a second electronic component
mounted on said bottom surface of said circuit substrate, at a
position adjacent to said at least one first electronic component,
and wherein said pair of terminals are longer in said height
direction than said at least one first electronic component and
said second electronic component.
4. The power module according to claim 3, wherein said pair of
terminals are wider than said at least one first electronic
component or said second electronic component.
5. The power module according to claim 1, further comprising a
terminal disposed on said sealant, in a middle of said sealant in
said width direction in an upright manner, said terminal being
coupled to said circuit substrate at a tip of said terminal.
6. The power module according to claim 1, further comprising a
terminal for disposing said at least one first electronic component
above said sealant.
7. (canceled)
8. The power module according to claim 1, wherein said at least one
first electronic component comprises a plurality of first
electronic components, wherein said plurality of first electronic
components are mounted at positions adjacent to each other in said
width direction, and wherein said power module further comprises a
plurality of terminals for disposing each of said plurality of
first electronic components above said sealant.
9. The power module according to claim 8, further comprising a
terminal disposed on said sealant, between said plurality of first
electronic components adjacent to each other in an upright manner,
said terminal being coupled to said circuit substrate at a tip of
said terminal.
Description
BACKGROUND OF THE INVENTION
[0001] Field of the Invention
[0002] The present invention relates to power modules for reducing
the space utilized by electronic components mounted on circuit
substrates used for, for instance, controlling motors of industrial
equipment or consumer equipment.
[0003] Description of the Background Art
[0004] A conventional power module, when driven, can generate an
off-surge voltage. The power module can. be damaged by the surge
voltage if a voltage greater than a maximum rated voltage of the
power module is applied to the power module. To reduce or eliminate
the surge voltage, a film capacitor, called a snubber capacitor,
needs to be mounted on a circuit substrate near the power module.
Accordingly, a power module that has a capacitor embedded inside
the power module has been proposed (for instance, see Japanese
Patent Application Laid-Open No. 2007-151331 and Japanese Patent
Application Laid-Open No. 2005-328651).
[0005] However, a high dielectric material used for capacitors is a
sintered body. It is difficult to sinter a dielectric together with
a lead at high temperature when a large capacitor in size is formed
inside the conventional power module. As a result, such a large
capacitor cannot be mounted inside the power module.
[0006] Further, the film capacitor that has a high breakdown
voltage and a high frequency characteristic is large in size, and
the film capacitor thus requires a large space when mounted on the
circuit substrate. Hence, it is difficult to mount the large
capacitor between the circuit substrate and the power module
mounted on the circuit substrate. Because of this difficulty, the
circuit substrate has a restriction where, for instance, tall
electronic components need to he mounted on a surface opposite to a
surface on which the power module is mounted. Accordingly, Japanese
Patent Application Laid-Open No. 2011-67045 discloses an apparatus
including a snubber capacitor outside a power module, for
instance.
[0007] Although apparatuses described in Japanese Patent
Application Laid-Open No. 2007-151331 and Japanese Patent
Application Laid-Open No. 2005-328651 are configured such that
capacitors are disposed inside power modules, as described above,
it is difficult to dispose large capacitors in size inside the
power modules.
[0008] Furthermore, the apparatus described in Japanese Patent
Application Laid-Open No. 2011-67045 is configured such that the
capacitor is disposed outside the power module, and that an
electrode terminal is externally coupled between the power module
and a circuit substrate. As a result, the electrode terminal
unfortunately has a poor contact doe to external stresses, such as
vibrations.
SUMMARY OF THE INVENTION
[0009] It is an object of the present invention to provide a power
module that has a sufficient space in which a large electronic
component in size is disposed, and that has increased yield
strength against external stresses, such as vibrations.
[0010] The power module according to an aspect of the present
invention includes an insulating substrate, a semiconductor element
mounted above the insulating substrate, a sealant, and a pair of
terminals. The sealant seals the insulating substrate and the
semiconductor element. The sealant forms the outer shape of the
power module. The pair of terminals are disposed on the sealant, in
both ends of the sealant in a width direction of the power module
in an upright manner. The pair of terminals are spaced from, each
other in the width direction by a distance greater than the width
of at least one first electronic component mounted on the bottom
surface of a circuit substrate coupled to tips of the pair of
terminals. The pair of terminals are longer in a height direction
than the at least one first electronic component, where the height
direction is orthogonal to the width direction.
[0011] The pair of terminals are spaced from each other in the
width direction by the distance greater than the width of the at
least one first electronic component mounted on the bottom surface
of the circuit substrate coupled to the tips of the pair of
terminals. The pair of terminals are longer in the height direction
than the at least one first electronic component, where the height
direction is orthogonal to the width direction. Such a
configuration enables the power module to have the sufficient space
for disposing die large electronic component in size between the
circuit substrate and the power module. Further, the circuit
substrate, on which the first electronic component is mounted, is
coupled to the tips of the pair of terminals. Hence, the pair of
terminals are capable of supporting the circuit substrate. This
enables the power module to have increased yield strength against
the external stresses, such as the vibrations.
[0012] These and other objects, features, aspects and advantages of
the present invention will become more apparent from the following
detailed description of the present invention when taken in
conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] FIG. 1 is a cross-sectional view of a power module according
to a first preferred embodiment fixed to a control substrate;
[0014] FIG. 2 is a cross-sectional view of a power module according
to a second preferred embodiment fixed to a control, substrate;
[0015] FIG. 3 is a cross-sectional view of a power module according
to a third preferred embodiment fixed to a control substrate;
[0016] FIG. 4 is a cross-sectional view of a power module according
to a fourth preferred embodiment fixed to a control substrate;
[0017] FIG. 5 is a cross-sectional view of a power module according
to a fifth preferred embodiment fixed to a control substrate;
[0018] FIG. 6 is a cross-sectional view of a power module according
to a sixth preferred embodiment fixed to a control substrate;
[0019] FIG. 7 is a cross-sectional view of a power module according
to a seventh preferred embodiment fixed to a control substrate;
[0020] FIG. 8 is a cross-sectional view of a power module according
to an eighth preferred embodiment fixed to a control substrate;
and
[0021] FIG. 9 is a cross-sectional view of a power module according
to a ninth preferred embodiment fixed to a control substrate.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
First Preferred Embodiment
[0022] The following describes a first preferred embodiment, of the
present invention with reference to a drawing.
[0023] FIG. 1 is a cross-sectional view of a power module 10
according to the first preferred embodiment fixed to a control
substrate 16. As illustrated in FIG. 1, the power module 10
includes a base plate 11, insulating substrates 12, semiconductor
elements 18, a sealant 30, and a pair of terminals 15. The
insulating substrates 12 are each fixed on the top surface of the
base plate 11. Moreover, the insulating substrates 12 each include
a pattern 13 formed on the top surface of the insulating substrate
12. The semiconductor elements 18 are fixed (mounted) above the top
surfaces of the patterns 13 through solder 14. The insulating
substrates 12 are each made of a material having an excellent
insulation characteristic and thermal conductivity.
[0024] Here, the insulating substrate 12 and the base plate 11 may
be an integral structure. Moreover, the semiconductor elements 18
are each an IGBT or a free wheel diode (hereinafter referred to as
FWDi), and may include a wide bandgap semiconductor, such as a
silicon carbide (SiC) element.
[0025] The sealant 30 seals the insulating substrate 12 and the
semiconductor element 18 (to be more specific, the sealant 30 seals
the base plate 11, the insulating substrate 12 and. the
semiconductor element 18), and the sealant 30 forms the outer shape
of the power module 10. The pair of terminals 15 are disposed and
fixed on the sealant 30, in both ends of the sealant 30 in a width
direction of the power module 10 in an upright manner. It is noted
that the width direction of the power module 10 is a horizontal
direction in FIG. 1. In addition, the width direction of the power
module 10 will be just also referred to as a width direction.
[0026] The control substrate 16 (circuit substrate) is disposed on
the upper side of the power module 10. The power module 10 is
joined (coupled) to the control substrate 16 through the pair of
terminals 15. To be more specific, the control substrate 16 is
joined to tips of the pair of terminals 15. A film capacitor 17
(first electronic component) is mounted on the bottom surface of
the control substrate 16.
[0027] The pair of terminals 15 are spaced from each other in the
width direction by a distance greater than the width of the film
capacitor 17, which is mounted on the bottom surface of the control
substrate 16, which is joined to the tips of the pair of terminals
15, The pair of terminals 15 are longer in a height direction than
the film capacitor 17. In other words, the pair of terminals 15
each have a length for a sufficient space necessary to dispose the
film capacitor 17 inside the power module 10 (between the control
substrate 16 and the power module 10), more specifically, between
the control substrate 16 and sealant 30, and between the pair of
terminals 15. Here, the height direction is a direction orthogonal
to the width direction of the power module 10.
[0028] As described above, the power module 10 according to the
first preferred embodiment is configured such that the pair of
terminals 15 are spaced from each other in the width direction by
the distance greater than the width of the film capacitor 17, which
is mounted on the bottom surface of the control substrate 16, which
is coupled to the tips of the pair of terminals 15. The power
module 10 is also configured such that the pair of terminals 15 are
longer in the height direction than the film capacitor 17. Hence,
such a configuration enables the power module 10 to have a
sufficient space for disposing a large electronic component in
size, such as the film capacitor 17, inside the power module 10,
i.e., between the control substrate 16 and the power module 10.
[0029] This eliminates the need for the top surface of the control
substrate 16 to have a sufficient space in which the film capacitor
17 is disposed. Hence, the control substrate 16 is small in size.
Consequently, this provides miniaturization in control equipment
that includes the control substrate 16, miniaturization in
packaging, and efficient transportation method. These advantages
achieves a reduction in manufacturing cost for the control
equipment and a reduction in consumption of energy.
[0030] Further, since the control substrate 16, on which the film
capacitor 17 is mounted, is coupled to the tips of the pair of
terminals 15, the pair of terminals 15 are capable of supporting
the control substrate 16. This enables the power module 10 to have
increased yield strength against external stresses, such as
vibrations.
Second Preferred Embodiment
[0031] The following describes a power module 10A according to a
second preferred embodiment. FIG. 2 is a cross-sectional view of a
power module 10A according to a second preferred embodiment fixed
to a control substrate 16. In the second preferred embodiment, like
elements described in the first preferred embodiment will be
denoted by tike reference symbols. Thus, descriptions of these like
elements will be omitted.
[0032] In the second preferred embodiment, the power module 10A
includes a pair of terminals 15a instead of the pair of terminals
15. The pair of terminals 15a are wider than a film capacitor 17.
The pair of terminals 15a have inner side-surfaces adjacent to the
side surfaces of the film capacitor 17 in a width direction.
[0033] As described above, the power module 10A according to the
second preferred embodiment is configured such that the pair of
terminals 15a are wider than the film capacitor 17. Such a
configuration enables the power module 10A to have further
increased yield strength against external stresses, such as
vibrations when compared with
[0034] the power module 10 in the first preferred embodiment.
Third Preferred Embodiment
[0035] The following describes a power module 10B according to a
third preferred embodiment. FIG. 3 is a cross-sectional view of a
power module 10B according to the third preferred embodiment fixed
to a control substrate 16. In the third preferred embodiment, like
elements described in the first and second preferred embodiments
will be denoted by like reference symbols. Thus, descriptions of
these like elements will be omitted.
[0036] In the third preferred embodiment, the power module 10B
includes a pair of terminals 15b instead of the pair of terminals
15 with respect to the first preferred embodiment. A film capacitor
17 and a cement resistor 19 (second electronic component) are
mounted on the bottom surface of the control substrate 16. The
cement resistor 19 is mounted on the bottom surface of the control
substrate 16, at a position adjacent to the film capacitor 17.
[0037] The pair of terminals 15b are spaced from each other in a
width direction by a distance greater than the sum of the width of
the film capacitor 17 and the width of the cement resistor 19. The
pair of terminals 15b are longer in a height direction than the
film capacitor 17 and the cement resistor 19. To be more specific,
the cement resistor 19 is higher than the film capacitor 17; and
the pair of terminals 15b are higher in the height t direction than
the cement resistor 19. It is noted that the pair of terminals 15b
are as wide as the pair of terminals 15.
[0038] Hence, such a configuration enables the power module 10B to
have a sufficient space for disposing large electronic components
in size, such as the film capacitor 17 and the cement resistor 19,
inside the power module 10B, i.e., between the control substrate 16
and the power module 10B. It is noted that the cement resistor 19
is a resistor intended for use in large electric power used for an
over-current detection circuit or current monitor.
[0039] As described above, the power module 10B according to the
third preferred embodiment is configured such that the pair of
terminals 15b are spaced from each other in the width direction by
the distance greater than the sum of the width of the film
capacitor 17 and the width of the cement resistor 19, which is
mounted on the bottom surface of the control substrate 16, at the
position adjacent to the film capacitor 17. The power module 10B is
also configured such that the pair of terminals 15b are higher in
the height direction than the film capacitor 17 and the cement
resistor 19. Hence, such a configuration enables the power module
10B to have the sufficient space for disposing the large electronic
components in size, such as the film capacitor 17 and the cement
resistor 19 inside the power module 10B.
Fourth Preferred Embodiment
[0040] The following describes a power module 10C according to a
fourth preferred embodiment. FIG. 4 is a cross-sectional view of
the power module 10C according to the fourth preferred embodiment
fixed to a control substrate 16. In the fourth preferred
embodiment, like elements described in the first to third preferred
embodiment will be denoted by like reference symbols. Thus,
descriptions of these like elements will be omitted,
[0041] In the fourth preferred embodiment, the power module 10C
includes a pair of terminals 15c instead of the pair of terminals
15b with respect to the third preferred embodiment. The pair of
terminals 15c are wider than a film capacitor 17 or a cement
resistor 19. The pair of terminals 15c have inner side-surfaces
each adjacent to a side surface of the film capacitor 17 or a side
surface of the cement resistor 19 in a width direction.
[0042] As described above, the power module 10C according to the
fourth preferred embodiment is configured such that the pair of
terminals 15c are wider than the film capacitor 17 or the cement
resistor 19. Hence, such a configuration enables the power module
10C to have further increased yield strength against external
stresses, such as vibrations when compared with the power module
10B in the third preferred embodiment.
Fifth Preferred Embodiment
[0043] The following describes a power module 10D according to a
fifth preferred embodiment. FIG. 5 is a cross-sectional view of the
power module 10D according to the fifth preferred embodiment fixed
to a control substrate 16. In the fifth preferred embodiment, like
elements described in the first to fourth preferred embodiments
will be denoted by like reference symbols. Thus, descriptions of
like elements will be omitted.
[0044] In the fifth preferred embodiment, film capacitors 17a and
17b are mounted on the bottom surface of the control substrate 16.
Moreover, the power module 10D, with respect to the first preferred
embodiment, further includes a terminal 20 that is disposed on a
sealant 30, in the middle of the sealant 30 in a width direction of
the power module 10D in an upright manner, and that is coupled to
the control substrate 16 at a tip of the terminal 20. The terminal
20 that has no electrode is disposed between the film capacitors
17a and 17b. Moreover, the terminal 20 is as long in a height
direction as a pair of terminals 15 in a height direction, and the
terminal 20 is as wide as the pair of terminals 15.
[0045] As described above, the power module 10D according to the
fifth preferred embodiment further includes the terminal 20 that is
disposed on the sealant 30, in the middle of the sealant 30 in the
width direction of the power module 10D in an upright manner, and
that is coupled to the control substrate 16 at the tip of the
terminal 20. Hence, such a configuration enables the power module
10D to have further increased yield strength against external
stresses, such as vibrations when compared with the power module 10
in the first preferred embodiment.
Sixth Preferred Embodiment
[0046] The following described a power module 10E according to a
six preferred embodiment. FIG. 6 is a cross-sectional view of the
power module 10E according to the sixth preferred embodiment fixed
to a control substrate 16. In the sixth preferred embodiment, like
elements described in the first to fifth preferred embodiments will
be denoted by like reference symbols. Thus, descriptions of these
like elements will be omitted.
[0047] The film capacitor 17 in the first preferred embodiment is
mounted on the bottom surface of the control substrate 16. In
contrast, a film, capacitor 17 in the six preferred embodiment is
mounted above the top surface of a sealant 30. The power module 10E
further includes a terminal 21 for disposing a film capacitor 17
above the sealant 30. A pair of terminals 15 are longer in a height
direction than the film capacitor 17 disposed on the terminal
21.
[0048] As described above, the power module 10E according to the
sixth preferred embodiment further includes the terminal 21 for
disposing the film capacitor 17 above the sealant 30. Such a
configuration enables a reduction in a space in which the film
capacitor 17 on the bottom surface of the control substrate 16 is
disposed.
Seventh Preferred Embodiment
[0049] The following described a power module 10F according to a
seventh preferred embodiment FIG. 7 is a cross-sectional view of
the power module 10F according to the seventh preferred embodiment
fixed to a control substrate 16. In the seventh preferred
embodiment, like elements described in the first to sixth preferred
embodiments will be denoted by like reference symbols. Thus,
descriptions of like elements will be omitted.
[0050] In the seventh preferred embodiment, the power module 10F
includes a pair of terminals 15d instead of pair of terminals 15
with respect to the power module 10E in the sixth preferred
embodiment. The pair of terminals 15d are wider than a film
capacitor 17.
[0051] As described above, the power module 10F according to the
seventh preferred embodiment is configured such that the pair of
terminals 15d are wider than the film capacitor 17. Such a
configuration enables the power module 10F to have further
increased yield strength against external stresses, such as
vibrations when compared with the power module 10E in the sixth
preferred embodiment.
Eighth Preferred Embodiment
[0052] The following described a power module 10G according to an
eighth preferred embodiment. FIG. 8 is a cross-sectional view of
the power module 10G according to the eighth preferred embodiment
fixed to a control substrate 16. In the eighth preferred
embodiment, like elements described in the first to seventh
preferred embodiments will be denoted by like reference symbols.
Thus, descriptions of like elements will be omitted.
[0053] In the eighth preferred embodiment, the power module 10G is
a six-in-one module that includes six IGBT chips and six FWDi chips
for reflux, and that constitutes a three-phase bridge. The power
module 10G includes three (a plurality of) terminals 21a, 21b, and
21c for coupling three (a plurality of) film capacitors 17c, 17d
and 17e to respective arms of the three-phase bridge.
[0054] In other words, the three film capacitors 17c, 17d, and 17e
are mounted above the top surface of a sealant 30, at positions
adjacent to each other in a width direction of the power module
10G. The power module 10G further includes the three terminals 21a,
21b, and 21c for disposing each of the three film capacitors 17c,
17d, and 17e above the sealant 30.
[0055] As described above, the power module 10G according to the
eighth preferred embodiment is configured such that the tree film
capacitors 17c, 17d, and 17e are mounted at the positions adjacent
to each other in the width direction of the power module 10G. The
power module 10G further includes the plurality of terminals 21a,
21b, and 21 for disposing each of the plurality of capacitors 17c,
17d, and 17e above the sealant 30. Consequently, such a
configuration enables the capacitors to have large capacitances at
a position adjacent to semiconductor elements 18 inside the power
module 10G. This minimizes a surge voltage generated in the
semiconductor elements 18.
Ninth Preferred Embodiment
[0056] The following described a power module 10H according to a
ninth preferred embodiment, FIG. 9 is a cross-sectional view of the
power module 10H according to the ninth preferred embodiment fixed
to a control substrate 16. In the ninth preferred embodiment, like
elements described in the first to eighth preferred embodiments
will be denoted by like reference symbols. Thus, descriptions of
like elements will be omitted.
[0057] In ninth preferred embodiment, the power module 10H, with
respect to the eighth preferred embodiment, further includes
terminals 22 and 23 disposed on a sealant 30, between adjacent film
capacitors in an upright manner, where the terminals 22 and 23 are
coupled to the control substrate 16 at tips of the terminals 22 and
23. The terminals 22 and 23 that have no electrodes are
respectively disposed between film capacitors 17c and 17d, and
between film capacitors 17d and 17e. The terminals 22 and 23 are as
long in a height direction as the pair of terminals 15 in a height
direction, and the terminals 22 and 23 are as wide as the pair of
terminals 15.
[0058] As described above, the power module 10H according to the
ninth preferred embodiment further includes the terminals 22 and 23
disposed on the sealant 30, between the adjacent film capacitors in
the upright manner, where the terminals 22 and 23 are coupled to
the control substrate 16 at the tips of the terminals 22 and 23.
Such a configuration enables the power module 10H to have further
increased yield strength against external stresses, such as
vibrations when compared to the power module 10G in the eighth
preferred embodiment.
[0059] It is to be noted that, in the present invention, respective
preferred embodiments can be freely combined, or can be modified
and omitted as appropriate, within the scope of the invention.
[0060] While the invention has been shown and described in detail,
the foregoing description, is in all aspects illustrative and not
restrictive. It is therefore understood that numerous modifications
and variations can be devised without departing from the scope of
the invention.
* * * * *