U.S. patent application number 15/293642 was filed with the patent office on 2017-08-03 for chemical mechanical polishing conditioner and fabrication method thereof.
The applicant listed for this patent is Kinik Company Ltd.. Invention is credited to Yu-Tai CHEN, Chia-Feng CHIU, Jui-Lin CHOU, Wen-Jen LIAO, Xue-Shen SU.
Application Number | 20170216994 15/293642 |
Document ID | / |
Family ID | 59385270 |
Filed Date | 2017-08-03 |
United States Patent
Application |
20170216994 |
Kind Code |
A1 |
CHOU; Jui-Lin ; et
al. |
August 3, 2017 |
CHEMICAL MECHANICAL POLISHING CONDITIONER AND FABRICATION METHOD
THEREOF
Abstract
A chemical mechanical polishing conditioner comprises a
substrate and at least one abrasive unit. The abrasive unit is
provided on the substrate, and the abrasive unit comprises a
supporting layer, an abrasive layer and a stress-relief layer. The
supporting layer is provided with a working face far away from the
substrate and a non-working face opposite to the working face. The
abrasive layer is provided on the working face of the supporting
layer, and the abrasive layer is a first diamond-plated film formed
by chemical vapor deposition method. The first diamond-plated film
is provided with a plurality of abrasive tips. The stress-relief
layer is provided on the non-working face of the supporting layer,
and the stress-relief layer is a second diamond-plated film formed
by chemical vapor deposition method. A thermal stress-relieving
effect may be exerted by the stress-relief layer, so as to reduce
warpage or deformation of the supporting layer.
Inventors: |
CHOU; Jui-Lin; (New Taipei,
TW) ; CHIU; Chia-Feng; (New Taipei, TW) ;
CHEN; Yu-Tai; (New Taipei, TW) ; LIAO; Wen-Jen;
(New Taipei, TW) ; SU; Xue-Shen; (New Taipei,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Kinik Company Ltd. |
Taipei |
|
TW |
|
|
Family ID: |
59385270 |
Appl. No.: |
15/293642 |
Filed: |
October 14, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B24B 53/017 20130101;
B24B 37/20 20130101; B24B 53/12 20130101 |
International
Class: |
B24B 53/017 20060101
B24B053/017; B24B 53/12 20060101 B24B053/12; B24B 37/20 20060101
B24B037/20 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 1, 2016 |
TW |
105103089 |
Claims
1. A chemical mechanical polishing conditioner, comprising: a
substrate; and at least one abrasive unit provided on said
substrate, said abrasive unit comprising: a supporting layer
provided with a working face far away from said substrate and a
non-working face opposite to said working face; an abrasive layer
provided on said working face of said supporting layer, said
abrasive layer being a first diamond-plated film formed by chemical
vapor deposition method, said first diamond-plated film being
provided with a plurality of abrasive tips; and a stress-relief
layer provided on said non-working face of said supporting layer,
said stress-relief layer being a second diamond-plated film formed
by chemical vapor deposition method.
2. The chemical mechanical polishing conditioner according to claim
1, wherein said substrate is provided with at least one recessed
portion for accommodating said abrasive unit
3. The chemical mechanical polishing conditioner according to claim
1, wherein said substrate is provided with at least one
through-hole for accommodating said abrasive unit.
4. The chemical mechanical polishing conditioner according to claim
1, wherein said substrate is a plane substrate.
5. The chemical mechanical polishing conditioner according to claim
1, wherein said substrate is selected from the group consisting of
a stainless steel substrate, a die steel substrate, a metal alloy
substrate, a ceramic substrate and a polymer substrate.
6. The chemical mechanical polishing conditioner according to claim
1, wherein the material of said supporting layer is silicon or
silicon carbide.
7. The chemical mechanical polishing conditioner according to claim
1, wherein a plurality of projecting tips are formed on said
working face of said supporting layer through a machining process,
while said abrasive layer is allowed for cladding said working face
of said supporting layer and thus provided with said abrasive tips
corresponding to said projecting tips.
8. The chemical mechanical polishing conditioner according to claim
1, wherein said first diamond-plated film is subjected to a
machining process to form said abrasive tips.
9. The chemical mechanical polishing conditioner according to claim
8, wherein said machining process is selected from the group
consisting of a grinding, a laser machining, an electro-discharge
machining, a dry etching and a wet etching.
10. The chemical mechanical polishing conditioner according to
claim 1, further comprising a bonding layer provided between said
substrate and said abrasive unit.
11. The chemical mechanical polishing conditioner according to
claim 10, wherein the material of said bonding layer is selected
from the group consisting of a ceramic material, a brazing
material, an electroplating material, an metal material and a
polymer material.
12. The chemical mechanical polishing conditioner according to
claim 11, wherein said brazing material is selected from the group
consisting of Fe, Co, Ni, Cr, Mn, Si and Al.
13. The chemical mechanical polishing conditioner according to
claim 11, wherein said polymer material is selected from the group
consisting of epoxy resin, polyester resin, polyacrylate resin and
phenolic resin.
14. A fabrication method of chemical mechanical polishing
conditioner, comprising the steps of step S1: providing a
supporting layer having a working face and a non-working face
opposite to said working face; step S2: providing an abrasive layer
and a stress-relief layer on said working face and said non-working
face of said supporting layer, respectively, to form an abrasive
unit by chemical vapor deposition method, said abrasive layer and
said stress-relief layer being a first diamond-plated film and a
second diamond-plated film, respectively, said first diamond-plated
film being provided with a plurality of abrasive tips; and step S3:
bonding said abrasive unit to a substrate.
15. The fabrication method of chemical mechanical polishing
conditioner according to claim 14, wherein in step S2, said
abrasive layer is firstly formed on said working face of said
supporting layer, and said stress-relief layer is then formed on
said non-working face of said supporting layer.
16. The fabrication method of chemical mechanical polishing
conditioner according to claim 14, wherein in step S2, a plurality
of projecting tips are firstly formed on said working face of said
supporting layer through a machining process, and said abrasive
layer is then formed on said working face, such that said first
diamond-plated film is provided with said abrasive tips
corresponding to said projecting tips.
17. The fabrication method of chemical mechanical polishing
conditioner according to claim 14, wherein in step S2, said
abrasive layer is provided on said working face of said supporting
layer, and said abrasive tips are formed on said first
diamond-plated film through a machining process.
18. The fabrication method of chemical mechanical polishing
conditioner according to claim 17, wherein said machining process
is selected from the group consisting of a grinding, a laser
machining, an electro-discharge machining, a dry etching and a wet
etching.
19. The fabrication method of chemical mechanical polishing
conditioner according to claim 14, wherein said substrate is
provided with at least one recessed portion for accommodating said
abrasive unit
20. The fabrication method of chemical mechanical polishing
conditioner according to claim 14, wherein said substrate is
provided with at least one through-hole for accommodating said
abrasive unit.
21. The fabrication method of chemical mechanical polishing
conditioner according to claim 14, wherein said substrate is a
plane substrate.
22. The fabrication method of chemical mechanical polishing
conditioner according to claim 14, wherein said substrate is
selected from the group consisting of a stainless steel substrate,
a die steel substrate, a metal alloy substrate, a ceramic substrate
and a polymer substrate.
23. The fabrication method of chemical mechanical polishing
conditioner according to claim 14, wherein the material of said
supporting layer is silicon or silicon carbide.
Description
FIELD OF THE INVENTION
[0001] The present invention is related to a chemical mechanical
polishing conditioner and fabrication method thereof, particularly
to a chemical mechanical polishing conditioner with excellent
flatness and fabrication method thereof.
BACKGROUND OF THE INVENTION
[0002] Chemical mechanical polishing (CMP) is a flattening
technology commonly used in semiconductor processing. In a common
CMP processing, a polishing pad (or abrasive pad) fixed at a rotary
table is used to contact with and apply a force to a silicon wafer
carried on a spinning carrier. The carrier and the rotary table are
rotated, while a polishing slurry is supplied to the polishing pad
during polishing. In general, fragments derived by polishing and
the polishing slurry are accumulated in pores of the polishing pad,
such that the polishing pad is consumed and the effect of polishing
on semiconductor is then reduced. Therefore, it is necessary to use
a conditioner for the removal of fragments and polishing slurry
remained in the polishing pad.
[0003] A conventional conditioner may be found in U.S. Pat. No.
6,872,127B2, disclosing a polishing pad conditioning disks for
chemical mechanical polisher comprising, in one embodiment, a rigid
and non-brittle substrate, a plurality of pyramid-shaped
protrusions extending from the substrate in a matrix of rows and
columns, a plurality of grooves extending between the protrusions,
a seed layer provided on the plurality of protrusions, and a
contact layer provided on the seed layer. The substrate may be a
stainless steel substrate. The seed layer may include titanium
nitride. The contact layer may be a chemical vapor deposition
diamond film In addition, referring to Taiwan Patent No. 1492291, a
chemical mechanical polishing conditioner and fabrication method
thereof is disclosed. The chemical mechanical polishing conditioner
comprises a substrate and an abrasive layer. The abrasive layer
comprises a plurality of abrasive units, in which the abrasive
layer includes chemical vapor deposition diamond material, while
the abrasive units are provided with one or a plurality of grooves,
an apex, and an inclined plane formed between each of the grooves
and the apex. Moreover, each of the abrasive units is presented as
a conical shape or a cylindrical shape.
[0004] In the prior art mentioned above, the diamond films are all
deposited by chemical vapor deposition process at processing
temperature no less than hundreds of degrees. When the temperature
is reduced, warpage or deformation of the substrate may be resulted
from different thermal expansion coefficients between the diamond
film and the substrate, so as to affect flatness of the diamond
film Thus, there is still room for improvement.
SUMMARY OF THE INVENTION
[0005] It is the main object of the present invention to solve the
problem of poor flatness of a diamond film in the conventional
chemical mechanical polishing conditioner having the diamond film
deposited by chemical vapor deposition process.
[0006] For achieving the above object, the present invention
provides a chemical mechanical polishing conditioner, comprising a
substrate and at least one abrasive unit provided on the substrate.
The abrasive unit comprises a supporting layer provided with a
working face far away from the substrate and a non-working face
opposite to the working face; an abrasive layer provided on the
working face of the supporting layer, the abrasive layer being a
first diamond-plated film formed by chemical vapor deposition
method, the first diamond-plated film being provided with a
plurality of abrasive tips; and a stress-relief layer provided on
the non-working face of the supporting layer, the stress-relief
layer being a second diamond-plated film formed by chemical vapor
deposition method.
[0007] In one embodiment of the present invention, the substrate is
provided with at least one recessed portion for accommodating the
abrasive unit.
[0008] In one embodiment of the present invention, the substrate is
provided with at least one through-hole for accommodating the
abrasive unit.
[0009] In one embodiment of the present invention, the substrate is
a plane substrate.
[0010] In one embodiment of the present invention, the substrate is
selected from the group consisting of a stainless steel substrate,
a die steel substrate, a metal alloy substrate, a ceramic substrate
and a polymer substrate.
[0011] In one embodiment of the present invention, the material of
the supporting layer is silicon or silicon carbide.
[0012] In one embodiment of the present invention, a plurality of
projecting tips are formed on the working face of the supporting
layer through a machining process, while the abrasive layer is
allowed for cladding the working face of the supporting layer and
thus provided with the abrasive tips corresponding to the
projecting tips.
[0013] In one embodiment of the present invention, the first
diamond-plated film is subjected to a machining process to form
said abrasive tips.
[0014] In one embodiment of the present invention, the machining
process is selected from the group consisting of a grinding, a
laser machining, an electro-discharge machining, a dry etching and
a wet etching.
[0015] In one embodiment of the present invention, a bonding layer
is further provided between the substrate and the abrasive
unit.
[0016] In one embodiment of the present invention, the material of
the bonding layer is selected from the group consisting of a
ceramic material, a brazing material, an electroplating material, a
metal material and a polymer material.
[0017] In one embodiment of the present invention, the brazing
material is selected from the group consisting of Fe, Co, Ni, Cr,
Mn, Si and Al.
[0018] In one embodiment of the present invention, the polymer
material is selected from the group consisting of epoxy resin,
polyester resin, polyacrylate resin and phenolic resin.
[0019] For achieving the above object, the present invention
further provides a fabrication method of chemical mechanical
polishing conditioner comprising the steps as follows:
[0020] step S1: providing a supporting layer having a working face
and a non-working face opposite to the working face;
[0021] step S2: providing an abrasive layer and a stress-relief
layer on the working face and the non-working face of the
supporting layer, respectively, to form an abrasive unit by
chemical vapor deposition method, the abrasive layer and the
stress-relief layer being a first diamond-plated film and a second
diamond-plated film, respectively, the first diamond-plated film
being provided with a plurality of abrasive tips; and
[0022] step S3: bonding the abrasive unit to a substrate.
[0023] In one embodiment of the present invention, in step S2, the
abrasive layer is firstly formed on the working face of the
supporting layer and the stress-relief layer is then formed on the
non-working face of the supporting layer.
[0024] In one embodiment of the present invention, in step S2, the
plurality of projecting tips are firstly formed on the working face
of the supporting layer through a machining process, and the
abrasive layer is then formed on the working face, such that the
first diamond-plated film is provided with the abrasive tips
corresponding to the projecting tips.
[0025] In one embodiment of the present invention, in step S2, the
abrasive layer is provided on the working face of the supporting
layer, and the abrasive tips are formed on the first diamond-plated
film through a machining process.
[0026] In one embodiment of the present invention, the machining
process is selected from the group consisting of a grinding, a
laser machining, an electro-discharge machining, a dry etching and
a wet etching.
[0027] In one embodiment of the present invention, the substrate is
provided with at least one recessed portion for accommodating the
abrasive unit.
[0028] In one embodiment of the present invention, the substrate is
provided with at least one through-hole for accommodating the
abrasive unit.
[0029] In one embodiment of the present invention, the substrate is
a plane substrate.
[0030] In one embodiment of the present invention, the substrate is
selected from the group consisting of a stainless steel substrate,
a die steel substrate, a metal alloy substrate, a ceramic substrate
and a polymer substrate.
[0031] In one embodiment of the present invention, the material of
the supporting layer is silicon or silicon carbide.
[0032] To sum up, the effect of the present invention, in
comparison with prior art, is achieved by the use of the formation
of the first diamond-plated film and the second diamond-plated film
as the abrasive layer and the stress-relief layer at two sides of
the supporting layer, respectively. Consequently, the forces,
resulting in deformation, acting on the two sides of the supporting
layer are equal when temperature is decreased from a higher
temperature to a lower temperature during chemical vapor deposition
process, so as to reduce deformation of the supporting layer. In
other words, the effect of relieving a thermal stress is exerted by
the stress-relief layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0033] The patent or application file contains at least one drawing
executed in color. Copies of this patent or patent application
publication with color drawing(s) will be provided by the Office
upon request and payment of the necessary fee.
[0034] FIG. 1 is a cross-sectional diagram according to a first
embodiment of the present invention.
[0035] FIG. 2 is a cross-sectional diagram according to a second
embodiment of the present invention.
[0036] FIGS. 3A to 3F are diagrams illustrating the fabrication
process according to one embodiment of the present invention.
[0037] FIGS. 4A to 4C are diagrams illustrating the fabrication
process according to another embodiment of the present
invention.
[0038] FIGS. 5A to 5C illustrate flatness measurement of a
supporting layer before a first diamond-plated film and a second
diamond-plated film are formed in one embodiment of the present
invention.
[0039] FIGS. 6A to 6C illustrate flatness measurement of the
supporting layer after the first diamond-plated film is formed in
one embodiment of the present invention.
[0040] FIGS. 7A to 7C illustrate flatness measurement of the
supporting layer after the first diamond-plated film and the second
diamond-plated film are formed in one embodiment of the present
invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0041] The detailed description and technical content of the
present invention will be described, in conjunction with drawings,
as follows.
[0042] Referring to FIGS. 1 and 2, there are shown cross-sectional
diagrams according to a first embodiment and a second embodiment,
respectively, of the present invention. A chemical mechanical
polishing conditioner of the present invention comprises a
substrate 10 and at least one abrasive unit 20. The abrasive unit
20 is provided on the substrate 10, and the abrasive unit 20
comprises a supporting layer 21, an abrasive layer 22 and a
stress-relief layer 23. The supporting layer 21 is provided with a
working face 211 located at one side far away from the substrate 10
while used for bearing the abrasive layer 22, and a non-working
face 212 opposite to the working face 211. The abrasive layer 22
and the stress-relief layer 23 are a first diamond-plated film and
a second diamond-plated film, respectively, formed by chemical
vapor deposition method. In this connection, the abrasive layer 22
is provided on the working face 211 of the supporting layer 21 and
provided with a plurality of abrasive tips 221, while the
stress-relief layer 23 is provided on the non-working face 212 of
the supporting layer 21. In this embodiment, the chemical
mechanical polishing conditioner further comprises a bonding layer
30, provided between the substrate 10 and the abrasive unit 20, for
bonding the abrasive unit 20 to the substrate 10. Moreover, one
abrasive unit 20 is provided in the first embodiment as illustrated
in FIG. 1, while a plurality of abrasive units 20 are provided in
the second embodiment as illustrated in FIG. 2.
[0043] Next, a fabrication method of chemical mechanical polishing
conditioner of the present invention will be described. Referring
to FIGS. 3A to 3F cooperatively, there are shown diagrams of
fabrication process according to one embodiment of the present
invention. Firstly, the supporting layer 21 of silicon or silicon
carbide is provided, as illustrated in FIG. 3A. Subsequently, the
first diamond-plated film (namely, the abrasive layer 22), composed
of polycrystalline diamond material and provided with a rough top
surface 22a, is deposited on the working face 211 of the supporting
layer 21 by chemical vapor deposition method, as illustrated in
FIG. 3B. Subsequently, planarization process is performed on the
top surface 22a in mechanical or chemical polishing or abrasive
manner, such that the top surface 22a is provided with a planar
surface, as illustrated in FIG. 3C. Afterwards, patterning process
is performed on the planarized abrasive layer 22 through a
machining process, so as to form a plurality of abrasive tips 221.
In this connection, each of the abrasive tips 221 may be preferably
formed as a pyramid shape as illustrated in FIG. 3D, while the
machining process may be grinding, laser machining,
electro-discharge machining, dry etching or wet etching. Then, the
second diamond-plated film (namely, the stress-relief layer 23), is
deposited on the non-working face 212 of the supporting layer 21 by
chemical vapor deposition method, as illustrated in FIG. 3E.
Finally, the bonding layer 30 is then used for bonding the abrasive
unit 20 to the substrate 10, with the bonding layer 30 being
provided between the substrate 10 and the abrasive unit 20, as
illustrated in FIG. 3F.
[0044] Referring to FIGS. 4A to 4C continuously, there are shown
diagrams of fabrication process according to another embodiment of
the present invention. In another embodiment of the present
invention, as illustrated in FIG. 4A, the supporting layer 21 of
silicon or silicon carbide is provided firstly, the supporting
layer 21 having the working face 211 and the non-working face 212.
Subsequently, a plurality of projecting tips 211a are formed on the
working face 211 of the supporting layer 21 through a machining
process, as illustrated in FIG. 4B. In this connection, each of the
projecting tips 211a may be preferably formed as a pyramid shape,
the machining process being possibly grinding, laser machining,
electro-discharge machining, dry etching or wet etching.
Afterwards, the first diamond-plated film (namely, the abrasive
layer 22), composed of polycrystalline diamond material, is then
formed on the working face 211, such that the first diamond-plated
film is provided with a plurality of abrasive tips 221
corresponding to the projecting tips 211a, as illustrated in FIG.
4C. The following steps are the same as those in the previous
embodiment referred to FIGS. 3E and 3F, and should not be described
further.
[0045] In the fabrication processes of the above embodiments, an
intermediate layer is further provided between the supporting layer
21 and the abrasive layer 22 and/or between the supporting layer 21
and the stress-relief layer 23, primarily in consideration of the
difference in expansion coefficient or lattice dimension between
the first and second diamond-plated films and the supporting layer
21, possibly leading to insufficient adhesive strength, and thus
resulting in delamination during polishing process, of the abrasive
layer 22 and/or the stress-relief layer 23. Therefore, various
methods, such as physical or chemical vapor deposition, soft
soldering, hard soldering and etc., may be used to form the
intermediate layer on the working face 211 and/or the non-working
face 212 of the supporting layer 21. Forming the first
diamond-plated film firstly and then forming the second
diamond-plated film is taken as an example in the above
embodiments, but the present invention is not limited thereto. In
other embodiments, it is also possible to form the second
diamond-plated film firstly and then form the first diamond-plated
film, or it is also possible to form the first diamond-plated film
and the second diamond-plated film at the same time. Moreover, the
abrasive tip 221 formed as a pyramid shape assuming a pointed top
is taken as an example in the above embodiments, but the present
invention is not limited thereto. The abrasive tip 221 may be also
formed as a flat top or other shapes with polishing capability as
required.
[0046] In the present invention, the substrate 10 may be selected
from stainless steel substrate, die steel substrate, metal alloy
substrate, ceramic substrate and polymer substrate. In addition,
the substrate 10 may be provided with at least one recessed portion
used for accommodating the abrasive unit 20, as illustrated in FIG.
1 or FIG. 2. Alternatively, the substrate 10 may be also provided
with a through-hole for the abrasive unit 20 to be accommodated
therein, or the substrate 10 may be a plane substrate. Moreover,
the material of the bonding layer 30 may be ceramic material,
brazing material, electroplating material, metal material or
polymer material. In this connection, the brazing material may be
metal or alloy including Fe, Co, Ni, Cr, Mn, Si or Al, while the
polymer material may be epoxy resin, polyester resin, polyacrylate
resin or phenolic resin.
[0047] For further verification of the effect of the present
invention, measurement on flatness with respect to the supporting
layer 21 is performed before the first diamond-plated film (the
abrasive layer 22) and the second diamond-plated film (the
stress-relief layer 23) are formed, after the first diamond-plated
film (the abrasive layer 22) is formed, and after the first
diamond-plated film (the abrasive layer 22) and the second
diamond-plated film (the stress-relief layer 23) are formed.
Referring to FIGS. 5A to 5C, firstly, the measuring lines L1, L2,
L3, and L4 are presented horizontally, suggesting that the
supporting layer 21 is provided with excellent and uniform flatness
before the first diamond-plated film (the abrasive layer 22) and
the second diamond-plated film (the stress-relief layer 23) are
formed. Referring to FIGS. 6A to 6C continuously, the measuring
lines L1, L2, L3, and L4 are presented as a topography of middle
projection with recessed rim in two ends, suggesting that the
supporting layer 21 is presented unevenly resulted from deformation
significantly after the first diamond-plated film (the abrasive
layer 22) is formed, which is just the problem in conventional art
at present. Referring to FIGS. 7A to 7C further, as shown in these
figures, the measuring lines L1, L2, L3, and L4 are presented
horizontally, suggesting that the problem of deformation of the
supporting layer 21 illustrated in FIG. 6A is eliminated, such that
excellent and uniform flatness is presented on the supporting layer
21 again, after the second diamond-plated film (the stress-relief
layer 23) is further formed on the non-working face 212 of the
supporting layer 21. Therefore, the problem in conventional art is
truly eliminated.
[0048] The effect of the present invention, in comparison with
prior art, is achieved by the use of the formation of the first
diamond-plated film and the second diamond-plated film as the
abrasive layer and the stress-relief layer at two sides of the
supporting layer, respectively. Consequently, the forces, resulting
in deformation, acting on the two sides of the supporting layer are
equal when temperature is decreased from a higher temperature to a
lower temperature during chemical vapor deposition process, so as
to reduce deformation of the supporting layer. In other words, the
effect of relieving a thermal stress is exerted by the
stress-relief layer.
[0049] While this invention has been detailed described in
connection with what is presently considered to be preferred
embodiments, it should be understood that the invention is not
limited to the disclosed embodiments. That is to say, various
variations and modifications made in accordance with the patent
claims should fall within the scope of the present invention.
* * * * *