U.S. patent application number 15/214637 was filed with the patent office on 2017-07-27 for method of forming a conductive pattern and method of manufacturing an organic light-emitting display including the same.
The applicant listed for this patent is SAMSUNG DISPLAY CO., LTD.. Invention is credited to TAEHYUN KIM, JUNGKYU LEE, SEUNGMIN LEE, SANGHO PARK.
Application Number | 20170213994 15/214637 |
Document ID | / |
Family ID | 59296312 |
Filed Date | 2017-07-27 |
United States Patent
Application |
20170213994 |
Kind Code |
A1 |
KIM; TAEHYUN ; et
al. |
July 27, 2017 |
METHOD OF FORMING A CONDUCTIVE PATTERN AND METHOD OF MANUFACTURING
AN ORGANIC LIGHT-EMITTING DISPLAY INCLUDING THE SAME
Abstract
A conductive material layer for forming a conductive pattern is
formed on a substrate. A photosensitive organic material layer is
formed on the conductive material layer. The photosensitive organic
material layer is irradiated through a halftone mask. The halftone
mask includes a first mask region having a boundary corresponding
to an edge of the conductive pattern, a second mask region, and a
third mask region disposed between the first mask region and the
second mask region. A first pattern including a first region
corresponding to the first mask region and a second region
corresponding to the third mask region is formed by removing the
photosensitive organic material layer. The conductive material
layer is etched using the first pattern as a hard mask to form the
conductive pattern having exposed lateral surfaces. A second
pattern is formed that covers the lateral surfaces of the
conductive pattern by reflowing the first pattern.
Inventors: |
KIM; TAEHYUN; (YONGIN-SI,
KR) ; PARK; SANGHO; (YONGIN-SI, KR) ; LEE;
SEUNGMIN; (YONGIN-SI, KR) ; LEE; JUNGKYU;
(YONGIN-SI, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG DISPLAY CO., LTD. |
YONGIN-SI |
|
KR |
|
|
Family ID: |
59296312 |
Appl. No.: |
15/214637 |
Filed: |
July 20, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/1248 20130101;
H01L 27/3258 20130101; H01L 21/0274 20130101; H01L 51/0023
20130101; H01L 27/3246 20130101; H01L 51/5228 20130101; H01L
21/32055 20130101 |
International
Class: |
H01L 51/52 20060101
H01L051/52; H01L 51/00 20060101 H01L051/00; H01L 51/56 20060101
H01L051/56; H01L 27/32 20060101 H01L027/32 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 27, 2016 |
KR |
10-2016-0010172 |
Claims
1. A method of forming a conductive pattern comprising: forming a
conductive material layer for forming the conductive pattern on a
substrate; forming a photosensitive organic material layer on the
conductive material layer; irradiating the photosensitive organic
material layer through a halftone mask including a first mask
region having a boundary corresponding to an edge of the conductive
pattern, a second mask region, and a third mask region disposed
between the first mask region and the second mask region; forming a
first pattern including a first region corresponding to the first
mask region and having a first thickness and a second region
corresponding to the third mask region and having a second
thickness smaller than the first thickness by removing the
photosensitive organic material layer; etching the conductive
material layer using the first pattern as a hard mask and forming
the conductive pattern arranged below the first pattern and having
exposed lateral surfaces; and forming a second pattern that covers
the lateral surfaces of the conductive pattern by reflowing the
first pattern.
2. The method of claim 1, wherein the third mask region is disposed
along the boundary of the first mask region and surrounds the first
mask region.
3. The method of claim 1, wherein the etching of the conductive
material layer comprises exposing a portion of a lower surface of
the second region of the first pattern.
4. The method of claim 3, wherein the edge of the conductive
pattern is indented with respect to an edge of the first
pattern.
5. The method of claim 1, wherein the removing of the
photosensitive organic material layer comprises fully removing a
first portion of the photosensitive organic material layer
corresponding to the second mask region and partially removing a
second portion of the photosensitive organic material layer
corresponding to the third mask region.
6. The method of claim 1, wherein the forming of the second pattern
comprises covering the lateral surfaces of the conductive pattern
by flowing a portion of the first pattern to along the lateral
surfaces of the conductive pattern.
7. The method of claim 1, wherein the conductive pattern has an
exposed region of which an upper surface is not covered with the
second pattern; the halftone mask further comprises a fourth mask
region corresponding to the exposed region of the conductive
pattern inside the first mask region; and the first pattern further
comprises a third region having a third thickness smaller than the
first thickness, in correspondence with the fourth mask region,
inside the first region.
8. The method of claim 7, wherein an average thickness of the third
region is less than an average thickness of the second region.
9. The method of claim 7, further comprising ashing the first
pattern such that an upper surface of the exposed region of the
conductive pattern is exposed.
10. A method of manufacturing a display device comprising: forming
a thin film transistor on a substrate; forming a via insulating
layer covering the thin film transistor; forming a conductive
material layer for forming a pixel electrode on the via insulating
layer; forming a photosensitive organic material layer on the
conductive material layer; irradiating the photosensitive organic
material layer through a halftone mask including a first mask
region corresponding to a light-emission region of the pixel
electrode, a second mask region surrounding the first mask region
and having an outer boundary corresponding to an edge of the pixel
electrode, a third mask region, and a fourth mask region disposed
between the second mask region and the third mask region; removing
the photosensitive organic material layer to form a first pattern
including a first region corresponding to the first mask region and
having a first thickness, a second region having a second thickness
greater than the first thickness, and a third region corresponding
to the fourth mask region and having a third thickness smaller than
the second thickness; etching the conductive material layer using
the first pattern as a hard mask to form the pixel electrode
arranged below the first pattern and having exposed lateral
surfaces; removing a portion of the first pattern to form a second
pattern through which an upper surface of the light-emission region
of the pixel electrode is exposed; and reflowing the second pattern
to form a pixel defining layer exposing the light-emission region
of the pixel electrode and covering the lateral surfaces of the
pixel electrode.
11. The method of claim 10, wherein the fourth mask region is
disposed along the outer boundary of the second mask region to
surround the second mask region.
12. The method of claim 10, wherein the etching of the conductive
material layer comprises exposing a portion of a lower surface of
the third region of the first pattern.
13. The method of claim 12, wherein the edge of the pixel electrode
is indented with respect to an edge of the first pattern.
14. The method of claim 10, wherein an average thickness of the
first region is less than an average thickness of the third
region.
15. The method of claim 10, wherein the removing of the
photosensitive organic material layer comprises partially removing
regions of the photosensitive organic material layer corresponding
to the first and fourth mask regions and fully removing a region of
the photosensitive organic material layer corresponding to the
third mask region.
16. The method of claim 10, wherein the forming of the second
pattern comprises ashing the first pattern so that the third region
is removed.
17. The method of claim 10, wherein the reflowing of the second
pattern comprises covering lateral surfaces of the pixel electrode
by flowing a portion of the second pattern along the lateral
surfaces of the pixel electrode.
18. The method of claim 10, further comprising: forming an organic
emission layer on the light-emission region of the pixel electrode;
and forming an opposite electrode on the organic emission layer and
the pixel defining layer.
19. The method of claim 18, further comprising forming a thin-film
encapsulation layer comprising at least one inorganic layer and at
least one organic layer on the opposite electrode.
20. A method of manufacturing a display device comprising: forming
a thin film transistor on a substrate; forming a via insulating
layer covering the thin film transistor; forming a conductive
material layer for forming a pixel electrode having a center region
on the via insulating layer; forming a photosensitive organic
material layer on the conductive material layer; irradiating the
photosensitive organic material layer through a halftone mask;
removing the photosensitive organic material layer to form a first
pattern including a first region having a first thickness, a second
region having a second thickness greater than the first thickness,
and a third region having a third thickness smaller than the second
thickness; etching the conductive material layer using the first
pattern as a hard mask to form the pixel electrode arranged
adjacent to the first pattern; removing a portion of the first
pattern to form a second pattern through which an upper surface of
the center region of the pixel electrode is exposed; and reflowing
the second pattern to form a pixel defining layer exposing an upper
surface of the center region of the pixel electrode and covering
lateral surfaces of the pixel electrode, wherein the reflowing of
the second pattern comprises covering the lateral surfaces of the
pixel electrode by flowing a portion of the second pattern along
the lateral surfaces of the pixel electrode.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority to and the benefit of
Korean Patent Application No. 10-2016-0010172, filed on Jan. 27,
2016 in the Korean Intellectual Property Office, the disclosure of
which is incorporated by reference herein in its entirety.
TECHNICAL FIELD
[0002] The described technology relates to a conductive pattern.
More particularly, the described technology relates to a method of
forming a conductive pattern and a method of manufacturing an
organic light-emitting display device including the conductive
pattern.
DISCUSSION OF RELATED ART
[0003] Organic light-emitting display devices include an organic
light emitting diode (OLED) having a hole injection electrode, an
electron injection electrode, and an organic emission layer
disposed between the hole injection electrode and the electron
injection electrode. In addition, organic light-emitting display
devices are self-emissive. In the organic emission layer, holes
injected through the hole injection electrode and electrons
injected through the electron injection electrode combine with each
other to generate excitons of atoms that fall from an excited state
to a ground state thereby generating light.
[0004] Organic light-emitting display devices do not need a light
source and thus are driven with a low voltage. Organic
light-emitting display devices are also lightweight and thin. In
addition, since the organic light-emitting display devices may have
a wide viewing angle, a high contrast, and a fast response time,
organic light-emitting display devices are applied to personal
portable electronic devices and, more recently, to televisions.
SUMMARY
[0005] Embodiments of the present invention provide a method of
forming a conductive pattern that may be protected by an insulating
layer by using a single mask. Embodiments of the present invention
further include an organic light-emitting display device which may
be capable of realizing a high resolution at a lower cost and a
method of manufacturing the organic light-emitting display
device.
[0006] According to an exemplary embodiment of the present
invention, a method of forming a conductive pattern is provided.
According to the method, a conductive material layer for forming
the conductive pattern is formed on a substrate. A photosensitive
organic material layer is formed on the conductive material layer.
The photosensitive organic material layer is irradiated through a
halftone mask. The halftone mask includes a first mask region
having a boundary corresponding to an edge of the conductive
pattern, a second mask region, and a third mask region disposed
between the first mask region and the second mask region. A first
pattern including a first region corresponding to the first mask
region and having a first thickness and a second region
corresponding to the third mask region and having a second
thickness smaller than the first thickness is formed by removing
the photosensitive organic material layer. The conductive material
layer is etched using the first pattern as a hard mask and forms
the conductive pattern arranged below the first pattern and has
exposed lateral surfaces. A second pattern that covers the lateral
surfaces of the conductive pattern is formed by reflowing the first
pattern.
[0007] The third mask region may be disposed along the boundary of
the first mask region. The third mask region may surround the first
mask region.
[0008] The etching of the conductive material layer may include
exposing a portion of a lower surface of the second region of the
first pattern.
[0009] The edge of the conductive pattern may be indented with
respect to an edge of the first pattern.
[0010] The removing of the photosensitive organic material layer
may include fully removing a first portion of the photosensitive
organic material layer corresponding to the second mask region. The
removing of the photosensitive organic material layer may also
include partially removing a second portion of the photosensitive
organic material layer corresponding to the third mask region.
[0011] The forming of the second pattern may include flowing a
portion of the first pattern along the lateral surfaces of the
conductive pattern to cover the lateral surfaces of the conductive
pattern.
[0012] The conductive pattern may have an exposed region. An upper
surface of the exposed region of conductive pattern might not be
covered with the second pattern. The halftone mask may further
include a fourth mask region corresponding to the exposed region of
the conductive pattern inside the first mask region. The first
pattern may further have a third region having a third thickness
smaller than the first thickness in correspondence with the fourth
mask region, inside the first region.
[0013] An average thickness of the third region may be less than an
average thickness of the second region.
[0014] The first pattern may be ashed such that an upper surface of
the exposed region of the conductive pattern may be exposed.
[0015] According to an exemplary embodiment of the present
invention, a method of manufacturing a display device is provided.
According to the method, a thin film transistor is formed on a
substrate. A via insulating layer that covers the thin film
transistor is formed. A conductive material layer for forming a
pixel electrode is formed on the via insulating layer. A
photosensitive organic material layer is formed on the conductive
material layer. The photosensitive organic material layer is
irradiated through a halftone mask. The halftone mask includes a
first mask region corresponding to a light-emission region of the
pixel electrode and a second mask region surrounding the first mask
region. The second mask region has an outer boundary corresponding
to an edge of the pixel electrode. The halftone mask further
includes a third mask region and a fourth mask region disposed
between the second mask region and the third mask region. The
photosensitive organic material layer is removed to form a first
pattern. The first pattern includes a first region corresponding to
the first mask region and having a first thickness and a second
region having a second thickness greater than the first thickness.
The first pattern further includes a third region corresponding to
the fourth mask region and having a third thickness smaller than
the second thickness. The conductive material layer is etched using
the first pattern as a hard mask in forming the pixel electrode
arranged below the first pattern and has exposed lateral surfaces.
A portion of the first pattern is removed to form a second pattern
through which an upper surface of the light-emission region of the
pixel electrode is exposed. The second pattern is reflowed to form
a pixel defining layer. The pixel defining layer exposes the
light-emission region of the pixel electrode and covers the lateral
surfaces of the pixel electrode.
[0016] The fourth mask region may be disposed along the outer
boundary of the second mask region. The fourth mask region may
surround the second mask region.
[0017] The etching of the conductive material layer may include
exposing a portion of a lower surface of the third region of the
first pattern.
[0018] The edge of the pixel electrode may be indented with respect
to an edge of the first pattern.
[0019] An average thickness of the first region may be less than an
average thickness of the third region.
[0020] The removing of the photosensitive organic material layer
may include partially removing regions of the photosensitive
organic material layer corresponding to the first and fourth mask
regions. The removing of the photosensitive organic material layer
may also include fully removing a region of the photosensitive
organic material layer corresponding to the third mask region.
[0021] The forming of the second pattern may include ashing the
first pattern so that the third region is removed.
[0022] The reflowing of the second pattern may include flowing a
portion of the second pattern along the lateral surfaces of the
pixel electrode to cover the lateral surfaces of the pixel
electrode.
[0023] The organic emission layer may be formed on the
light-emission region of the pixel electrode. An opposite electrode
may be formed on the organic emission layer and the pixel defining
layer.
[0024] A thin-film encapsulation layer may be formed on the
opposite electrode. The thin-film encapsulation layer may include
at least one inorganic layer and at least one organic layer.
[0025] According to an exemplary embodiment of the present
invention, a method of manufacturing a display device is provided.
According to the method, a thin film transistor is formed on a
substrate. A via insulating layer that covers the thin film
transistor is formed. A conductive material layer for forming a
pixel electrode having a center region is formed on the via
insulating layer. A photosensitive organic material layer are
formed on the conductive material layer. The photosensitive organic
material layer is irradiated through a halftone mask. The
photosensitive organic material layer is removed to form a first
pattern. The first pattern includes a first region having a first
thickness and a second region having a second thickness greater
than the first thickness. The first pattern further includes a
third region having a third thickness smaller than the second
thickness. The conductive material layer is etched using the first
pattern as a hard mask in forming the pixel electrode arranged
adjacent to the first pattern. A portion of the first pattern is
removed to form a second pattern through which an upper surface of
the center region of the pixel electrode is exposed. The second
pattern is reflowed to form a pixel defining layer. The pixel
defining layer exposes the center region of the pixel electrode and
covers lateral surfaces of the pixel electrode. The reflowing of
the second pattern includes covering the lateral surfaces of the
pixel electrode by flowing a portion of the second pattern along
the lateral surfaces of the pixel electrode.
BRIEF DESCRIPTION OF THE DRAWINGS
[0026] These and/or other aspects will become apparent and more
readily appreciated from the following description of exemplary
embodiments, taken in conjunction with the accompanying drawings in
which:
[0027] FIGS. 1A to 1D are cross-sectional views illustrating a
method of forming a conductive pattern according to an exemplary
embodiment of the present invention;
[0028] FIGS. 2A to 2E are cross-sectional views illustrating a
method of forming a conductive pattern according to an exemplary
embodiment of the present invention;
[0029] FIG. 3 is a cross-sectional view of an organic
light-emitting display according to an exemplary embodiment of the
present invention;
[0030] FIGS. 4A to 4G are cross-sectional views illustrating a
method of manufacturing an organic light-emitting display of FIG. 3
according to an exemplary embodiment of the present invention;
[0031] FIG. 5A is a plan view illustrating a halftone mask used to
manufacture an organic light-emitting display according to an
exemplary embodiment of the present invention; and
[0032] FIG. 5B is a magnified cross-sectional view illustrating a
pixel electrode according to an exemplary embodiment of the present
invention.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0033] As the present invention allows for various changes and
numerous embodiments, exemplary embodiments of the present
invention will be illustrated in the drawings and described in
detail herein. Hereinafter, aspects and features of embodiments of
the present invention and a method for accomplishing them will be
described more fully with reference to the accompanying drawings;
however, the present invention may be embodied in many different
forms and should not be construed as limited to the exemplary
embodiments set forth herein.
[0034] It will be understood that when a layer, region, or
component is referred to as being "formed on" or "disposed on"
another layer, region, or component, it can be directly or
indirectly formed or disposed on the other layer, region, or
component. Therefore, intervening layers, regions, or components
may be present.
[0035] Sizes of elements in the drawings may be exaggerated for
convenience of explanation and the following embodiments of the
present invention are not limited thereto.
[0036] Embodiments of the present invention will be described below
in more detail with reference to the accompanying drawings. Those
components that are the same or are similar to components in other
figures may be referred to by the same reference numeral regardless
of the figure number and redundant explanations may be omitted.
[0037] FIGS. 1A to 1D are cross-sectional views illustrating a
method of forming a conductive pattern according to an exemplary
embodiment of the present invention.
[0038] Referring to FIG. 1D, a device 10 is disposed on a substrate
11. The device 10 includes a conductive pattern 12. The conductive
pattern 12 is covered with an organic insulating layer 13.
[0039] The conductive pattern 12 may be disposed on the substrate
11. The organic insulating layer 13 may cover an upper surface and
lateral surfaces of the conductive pattern 12. The device 10 may be
an organic light-emitting display.
[0040] The substrate 11 may include a thin film transistor disposed
on a base substrate. The thin film transistor may include an active
layer formed of a semiconductor material. The active layer may
include a source region, a drain region, and a channel region
disposed between the source region and drain region. The thin film
transistor may include a gate electrode at least partially
overlapping with the channel region of the active layer. The
substrate 11 may include a gate insulating layer that may insulate
the active layer from the gate electrode. The substrate 11 may be a
component of an organic light-emitting display device.
[0041] The conductive pattern 12 may include a single layer or may
include multiple layers of, for example, transparent conductive
oxide and/or metal. The organic insulating layer 13 may include a
photosensitive organic material that is insulating.
[0042] The conductive pattern 12 may include a source electrode and
a drain electrode of an organic light-emitting display device or
may include a wiring disposed on substantially the same layer on
which the source electrode and the drain electrode are disposed on.
The source electrode and the drain electrode may be respectively
electrically connected to the source region and the drain region of
the active layer within the substrate 11. The substrate 11 may
include an interlayer insulating layer that may insulate the gate
electrode from the conductive pattern 12. The organic insulating
layer 13 may insulate the conductive pattern 12 from another
conductive pattern that may be formed by a different process.
[0043] The substrate 11 may include the source electrode and the
drain electrode electrically connected to the source region and the
drain region of the active layer, respectively. The substrate 11
may also include an interlayer insulating layer that may insulate
the gate electrode from either or both of the source electrode and
the drain electrode. The substrate 11 may also include a via
insulating layer that may cover the thin film transistor. The via
insulating layer may have a planarized upper surface and may
include a single layer or multiple layers formed of an organic
material. The conductive pattern 12 may be a pixel electrode of an
organic light-emitting display device or a wiring disposed on
substantially the same layer on which the pixel electrode is
disposed. The organic insulating layer 13 may insulate the
conductive pattern 12 from a conductive material layer that may be
formed by a different process.
[0044] In general, to form the conductive pattern 12 covered with
the organic insulating layer 13 on the substrate 11, a first mask
for patterning the conductive pattern 12 and a second mask for
patterning the organic insulating layer 13 covering the conductive
pattern 12 may be used. According to a method, after the organic
insulating layer 13 is formed, the conductive pattern 12 may be
formed using the organic insulating layer 13 as a hard mask.
Therefore, only one mask may be needed to form the organic
insulating layer 13. However, in so doing, the lateral surfaces of
the conductive pattern 12 may be exposed. To cover the lateral
surfaces of the conductive pattern 12, the organic insulating layer
13 may undergo reflow. However, since volume shrinkage may occur
during reflow of an organic insulating material, the lateral
surfaces of the conductive pattern 12 may remain partially
exposed.
[0045] Exemplary embodiments of the present invention may provide a
method of forming a conductive pattern 12 on the substrate 11, in
which the lateral surfaces and an upper surface of the conductive
pattern 12 are covered with the organic insulating layer 13 by
using a single mask.
[0046] Referring to FIG. 1A, a conductive material layer 12' and a
photosensitive organic material layer 13'' may be sequentially
formed on the substrate 11.
[0047] The conductive material layer 12' may include at least one
transparent conductive oxide selected from the group consisting of
indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO),
indium oxide (In.sub.2O.sub.3), indium gallium oxide (IGO), and
aluminum zinc oxide (AZO). The conductive material layer 12' may
also include at least one metal selected from the group consisting
of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt),
palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium
(Ir), and chromium (Cr).
[0048] The photosensitive organic material layer 13'' may include a
photosensitive organic material that is insulating. The
photosensitive organic material may include a solvent to enable the
photosensitive organic material to be reflowed by applying, for
example, heat or infrared rays thereto. The photosensitive organic
material may include, for example, an olefin-based organic
material, an acryl-based organic material, or an imide-based
organic material. For example, the photosensitive organic material
may include polyimide (PI). The photosensitive organic material may
be a positive photosensitive material of which a portion exposed to
light may be removed. The photosensitive organic material may
alternatively be a negative photosensitive material of which a
portion not exposed to light may be removed.
[0049] Light may be radiated to the photosensitive organic material
layer 13'' and a halftone mask 14 may be used to block and transmit
light according to a desired pattern. The halftone mask 14 may
include a first mask region Ma, a second mask region Mc, and a
third mask region Mb. The first mask region Ma may correspond to
the conductive pattern 12 of FIG. 1D. The second mask region Mc may
correspond to a region of the substrate 11 from which the
conductive material layer 12' may be removed, for example, a region
of the substrate 11 on which the conductive pattern 12 might not be
disposed. The third mask region Mb may be disposed between the
first mask region Ma and the second mask region Mc. A light
transmittance of the third mask region Mb may be between a light
transmittance of the first mask region Ma and a light transmittance
of the second mask region Mc.
[0050] The third mask region Mb may be disposed along an output
boundary of the first mask region Ma to surround the first mask
region Ma. The output boundary of the first mask region Ma may be
defined as a boundary between the first mask region Ma and the
third mask region Mb.
[0051] According to an embodiment of the present invention, when
the photosensitive organic material layer 13'' includes a positive
photosensitive material, the first mask region Ma may block
substantially all light, the second mask region Mc may transmit
substantially all light, and the third mask region Mb may transmit
a portion of light. Therefore, the light transmittance of the third
mask region Mb may be higher than the light transmittance of the
first mask region Ma and the light transmittance of the third mask
region Mb may be lower than the light transmittance of the second
mask region Mc.
[0052] According to an embodiment of the present invention, when
the photosensitive organic material layer 13'' includes a negative
photosensitive material, the first mask region Ma may transmit
substantially all light, the second mask region Mc may block
substantially all light, and the third mask region Mb may transmit
a portion of light. Therefore, the light transmittance of the third
mask region Mb may be lower than the light transmittance of the
first mask region Ma and the light transmittance of the third mask
region Mb may be higher than the light transmittance of the second
mask region Mc.
[0053] Referring to FIGS. 1A and 1B, a portion of the
photosensitive organic material layer 13'' irradiated with light
through the halftone mask 14 may be removed. The photosensitive
organic material layer 13'' may undergo a developing process prior
to removal. A portion of the photosensitive organic material layer
13'' corresponding to the third mask region Mb may be partially
removed and a portion of the photosensitive organic material layer
13'' corresponding to the second mask region Mc may be
substantially completely removed.
[0054] As a portion of the photosensitive organic material layer
13'' is removed, a first pattern 13' including a first region 13a'
and a second region 13b' may accordingly be formed.
[0055] The first region 13a' may correspond to the first mask
region Ma and the second region 13b' may correspond to the third
mask region Mb. Since the portion of the photosensitive organic
material layer 13'' corresponding to the first mask region Ma might
not be substantially removed and the portion of the photosensitive
organic material layer 13'' corresponding to the third mask region
Mb may be partially removed, the first region 13a' may be thicker
than the second region 13b'.
[0056] Referring to FIG. 1C, the conductive pattern 12 may be
formed by wet etching the conductive material layer 12' of FIG. 1B
by using the first pattern 13' as a hard mask. The conductive
pattern 12 may be disposed below the first pattern 13' and the
lateral surfaces of the conductive pattern 12 may be exposed.
[0057] The conductive material layer 12' of FIG. 1B may be etched
using the first pattern 13' as a hard mask. Accordingly, a lower
surface of a portion of the second region 13b' of the first pattern
13' may be exposed. The portion of the second region 13b' having
the lower surface exposed may be positioned on a void. For example,
an edge of the conductive pattern 12 may be indented from an edge
of the first pattern 13' by a distance d. The distance d may be
about 0.7 .mu.m or greater. For example, the distance d may be
about 2 .mu.m or less.
[0058] Referring to FIGS. 1C and 1D, the organic insulating layer
13 covering the upper surface and the lateral surfaces of the
conductive pattern 12 may be formed by reflowing the first pattern
13'. The organic insulating layer 13 may be referred to as a second
pattern.
[0059] The first pattern 13' may be thermally reflowed by applying,
for example, heat or infrared rays. To perform a reflow process,
the substrate 11 including the first pattern 13' may be disposed on
a hot plate. Since the hot plate delivers heat upwards from the
substrate 11, a portion of the second region 13b' of the first
pattern 13' may flow along the lateral surfaces of the conductive
pattern 12. The reflow process may also be performed by heating the
substrate 11 including the first pattern 13' within an oven or
irradiating the substrate 11 including the first pattern 13' with
infrared rays.
[0060] When the lateral surfaces of the conductive pattern 12 are
exposed a short-circuit may occur between the conductive pattern 12
and another conductive pattern formed by a different process.
According to an embodiment of the present invention, the organic
insulating layer 13 covering the lateral surfaces of the conductive
pattern 12 may be formed by reflowing the first pattern 13'.
Therefore, the conductive pattern 12 and the organic insulating
layer 13 covering the upper surface and the lateral surfaces of the
conductive pattern 12 may be formed using a single mask according
to an embodiment of the present invention. Thus, manufacturing
costs may be reduced and a manufacturing process may be simplified,
which may lead to a reduction in processing time.
[0061] Referring to FIGS. 1A and 1C, the first pattern 13' may be
formed from the photosensitive organic material layer 13'' which
may include a photosensitive organic material and a solvent. When
the first pattern 13' is heated to undergo a reflow process, the
solvent within the photosensitive organic material may be removed
and at substantially the same time the volume of the first pattern
13' may shrink. In particular, the first region 13a' of the first
pattern 13', that is relatively thick, may receive a strong
shrinkage force during the volume shrinkage. If the first pattern
13' includes only a thick portion, the first pattern 13' may be
moved inwards due to the strong shrinkage force and the first
pattern 13' may fail to cover the lateral surfaces of the
conductive pattern 12 due to a surface tension of the reflowed
first pattern 13'. When the first pattern 13' including only a
thick portion is melted due to reflow, the melted first pattern 13'
may break and at substantially the same time a void may be
generated on the lateral surfaces of the conductive pattern 12.
[0062] According to an embodiment of the present invention, as
shown in FIG. 1B, the first pattern 13' may include the first
region 13a' and the second region 13b' may be positioned outside
the first region 13a' and may be relatively thick. The second
region 13b' of the first pattern 13' may receive a weak shrinkage
force compared to the shrinkage force received by the first region
13a' because the second region 13b' may be relatively thin.
Furthermore, since the second region 13b' may be thin, the second
region 13b' may melt prior to the first region 13a' due to reflow.
Since a space below a portion of the second region 13b' may be
empty, when a reflow process starts, the portion of the second
region 13b' may melt first and thus may flow along the lateral
surfaces of the conductive pattern 12 or may cover the lateral
surfaces of the conductive pattern 12 due to gravity. Consequently,
due to the second region 13b' of the first pattern 13' being thin,
the lateral surfaces of the conductive pattern 12 may be completely
covered with the organic insulating layer 13. Thus, a short-circuit
between another conductive pattern formed by a different process
and the lateral surfaces of the conductive pattern 12 may be
prevented.
[0063] FIGS. 2A to 2E are cross-sectional views illustrating a
method of forming a conductive pattern according to an embodiment
of the present invention.
[0064] Referring to FIG. 2E, a device 20 is disposed on a substrate
21. The device 20 includes a conductive pattern 22. The conductive
pattern 22 has an edge region, which is covered with an organic
insulating layer 23.
[0065] The device 20 may include the substrate 21. The conductive
pattern 22 may be disposed on the substrate 21. The conductive
pattern 12 may have a center region 22a and an edge region 22b
disposed around the center region 22a. An organic insulating layer
23 may expose the center region 22a of the conductive pattern 22.
The organic insulating layer 23 may also cover the edge region 22b
and lateral surfaces of the conductive pattern 22. The organic
insulating layer 23 may include a first inclined portion 23a
inclined toward the center region 22a of the conductive pattern 22
and a second inclined portion 23b inclined in a different direction
from the first inclined portion 23a. An end 22c of the conductive
pattern 22 may be positioned between the substrate 21 and the
second inclined portion 23b. The device 20 may be an organic
light-emitting display.
[0066] The substrate 21 may include a thin film transistor disposed
on a base substrate. The thin film transistor may include an active
layer formed of a semiconductor material. The active layer may
include a source region, a drain region, and a channel region
disposed between the source region and drain region. The thin film
transistor may also include a gate electrode at least partially
overlapping with the channel region of the active layer. The
substrate 21 may include a gate insulating layer that may insulate
the active layer from the gate electrode. The substrate 21 may
include a source electrode and a drain electrode respectively
electrically connected to the source region and the drain region of
the active layer. The substrate 21 may also include an interlayer
insulating layer that may insulate the gate electrode from the
source electrode and the drain electrode. The substrate 21 may
include a via insulating layer that may cover the thin film
transistor. The via insulating layer may have a planarized upper
surface and may include a single layer or may include multiple
layers formed of an organic material. The substrate 21 may be
flexible and may be easily bent, folded, or rolled. The substrate
21 may be a component of an organic light-emitting display
device.
[0067] The conductive pattern 22 may include a single layer or may
include multiple layers of, for example, transparent conductive
oxide and/or metal. The conductive pattern 22 may include at least
one transparent conductive oxide selected from the group consisting
of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide
(ZnO), indium oxide (In.sub.2O.sub.3), indium gallium oxide (IGO),
and aluminum zinc oxide (AZO). The conductive pattern 22 may
include at least one metal selected from the group consisting of
silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt),
palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium
(Ir), and chromium (Cr).
[0068] The conductive pattern 22 may include the center region 22a
that is exposed and is not covered with the organic insulating
layer 23. The conductive pattern 22 may further include the edge
region 22b positioned around the center region 22a and the edge
region 22b may be covered with the organic insulating layer 23.
[0069] The organic insulating layer 23 may expose the center region
22a of the conductive pattern 22 and cover the edge region 22b and
the lateral surfaces of the conductive pattern 22. The organic
insulating layer 23 may include a first inclined portion 23a
inclined toward the center region 22a of the conductive pattern 22
and a second inclined portion 23b inclined in a different direction
from the first inclined portion 23a. A thickness of the first
inclined portion 23a may increase from a region P1 on the
conductive pattern 22 toward the end 22c of the conductive pattern
22. The region P1 on the conductive pattern 22 may be defined as a
boundary between the center region 22a and the edge region 22b of
the conductive pattern 22. A thickness of the second inclined
portion 23b may decrease from the first inclined portion 23a toward
a region P2 on an upper surface of the substrate 21. The second
inclined portion 23b may have a different inclination direction
than that of the first inclined portion 23a. The boundary between
the first inclined portion 23a and the second inclined portion 23b
may be defined as a region having a largest height in a vertical
cross-section. For example, the boundary between the first inclined
portion 23a and the second inclined portion 23b may be defined as a
region having an upper surface parallel to the substrate 21.
[0070] An upper surface of the first inclined portion 23a may
extend from the region P1 on the conductive pattern 22 in a
direction away from the substrate 21. For example, the first
inclined portion 23a may have a cross-section of which a height
increases from the region P1 to the boundary between the first
inclined portion 23a and the second inclined portion 23b. An upper
surface of the second inclined portion 23b may extend from the
first inclined portion 23a to the region P2 on the substrate 21 in
a direction toward the substrate 21. For example, the second
inclined portion 23b may have a cross-section of which a height
decreases from the boundary between the first inclined portion 23a
and the second inclined portion 23b to the substrate 21.
[0071] The organic insulating layer 23 may be disposed such that an
upper surface of the center region 22a of the conductive pattern 22
is exposed and an upper surface of the edge region 22b of the
conductive pattern 22 and the lateral surfaces of the conductive
pattern 22 are covered. The organic insulating layer 23 may include
a photosensitive organic material that is insulating.
[0072] A portion of a lower surface of the organic insulating layer
23 may directly contact an upper surface of the conductive pattern
22 and the remaining portion thereof may directly contact the upper
surface of the substrate 21. The portion of the lower surface of
the organic insulating layer 23 directly contacting the upper
surface of the conductive pattern 22 may have a larger area than
the remaining portion directly contacting the upper surface of the
substrate 21.
[0073] The edge region 22b of the conductive pattern 22 may be
interposed between the first inclined portion 23a of the organic
insulating layer 23 and the substrate 21 and may also be interposed
between at least a portion of the second inclined portion 23b of
the organic insulating layer 23 and the substrate 21. For example,
the end 22c of the conductive pattern 22 may be positioned between
the substrate 21 and the second inclined portion 23b. As shown in
FIG. 3, a distance d1 from the region P1 on the conductive pattern
22 to the end 22c of the conductive pattern 22 may be greater than
a distance d2 from the end 22c of the conductive pattern 22 to the
region P2 on the end 22c of the conductive pattern 22.
[0074] According to an embodiment of the present invention, a first
angle .theta.1 between the upper surface of the conductive pattern
22 and an upper surface of the first inclined portion 23a may be
greater than a second angle .theta.2 between the upper surface of
the substrate 21 and an upper surface of the second inclined
portion 23b. For example, the first angle .theta.1 may be less than
about 55.degree. and the second angle .theta.2 may be about
35.degree.. A difference between the first angle .theta.1 and the
second angle .theta.2 may be about 5.degree. or greater.
[0075] An angle of inclination of the upper surface of the first
inclined portion 23a with respect to the upper surface of the
conductive pattern 22 may vary according to locations on the first
inclined portion 23a. An angle of inclination of the upper surface
of the second inclined portion 23b with respect to the upper
surface of the conductive pattern 22 may also vary according to
locations on the second inclined portion 23b. The first angle
.theta.1 may denote an angle of inclination of the upper surface of
the first inclined portion 23a at the region P1 on the conductive
pattern 22 and the second angle .theta.2 may denote an angle of
inclination of the upper surface of the second inclined portion 23b
at the region P2 on the substrate 21.
[0076] The conductive pattern 22 may be a pixel electrode of an
organic light-emitting display device or wiring disposed on
substantially the same layer as the layer on which the pixel
electrode is disposed. An organic emission layer may be disposed on
the center region 22a of the conductive pattern 22. The organic
insulating layer 23 may insulate the lateral surfaces of the
conductive pattern 22 from a conductive material layer that may be
formed by a different process.
[0077] In general, in order to form the conductive pattern 22
disposed on the substrate 21 including the center region 22a
exposed and the edge region 22b around the center region 22a and
lateral surfaces covered with the organic insulating layer 23, a
first mask for patterning the conductive pattern 22 on the
substrate 21 and a second mask for patterning the organic
insulating layer 23 covering the edge region 22b and the lateral
surfaces of the conductive pattern 22 may be needed. An organic
insulating pattern may be formed using a single halftone mask, the
conductive pattern 22 may be patterned using the organic insulating
pattern as a hard mask and a portion of the organic insulating
pattern may be removed to expose the center region 22a, thereby
forming a structure including the conductive pattern 22 and the
organic insulating layer 23 exposing the center region 22a of the
conductive pattern 22 and covering the edge region 22b of the
conductive pattern 22. In this method, only one halftone mask may
be needed, but the lateral surfaces of the conductive pattern 22
may be exposed. Although the organic insulating layer 23 may be
reflowed to cover the lateral surfaces of the conductive pattern
22, since volume shrinkage may occur during reflow of an organic
insulating material, a portion of the lateral surfaces of the
conductive pattern 22 may be exposed.
[0078] According to an embodiment of the present invention, a
method of forming the conductive pattern 22 on the substrate 21 and
the organic insulating layer 23 exposing the center region 22a of
the conductive pattern 22 and covering the edge region 22b and the
lateral surfaces of the conductive pattern 22 by using a single
halftone mask may be provided.
[0079] Referring to FIG. 2A, a conductive material layer 22' and a
photosensitive organic material layer 23''' may be sequentially
formed on the substrate 21.
[0080] The conductive material layer 22' may include at least one
transparent conductive oxide selected from the group consisting of
indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO),
indium oxide (In.sub.2O.sub.3, indium gallium oxide (IGO), and
aluminum zinc oxide (AZO). The conductive material layer 22' may
further include metal, such as silver (Ag), magnesium (Mg),
aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel
(Ni), neodymium (Nd), iridium (Ir), or chromium (Cr). The
conductive material layer 22' may include a single layer or may
include multiple layers.
[0081] The photosensitive organic material layer 23''' may include
a photosensitive organic material that is insulating. The
photosensitive organic material may include a solvent to enable the
photosensitive organic material to be reflowed by applying, for
example, heat or infrared rays thereto. The photosensitive organic
material may include, for example, an olefin-based organic
material, an acryl-based organic material, or an imide-based
organic material. For example, the photosensitive organic material
may include polyimide (PI). The photosensitive organic material may
be a positive photosensitive material of which a portion exposed to
light may be removed. The photosensitive organic material may
alternatively be a negative photosensitive material of which a
portion not exposed to light may be removed.
[0082] Light may be radiated to the photosensitive organic material
layer 23''' and a halftone mask 24 may be used to block and
transmit light according to a desired pattern. The halftone mask 24
may include a first mask region Ma, a second mask region Mb, a
third mask region Md, and a fourth mask region Mc. The first mask
region Ma may correspond to the center region 22a of the conductive
pattern 22 of FIG. 2E. The second mask region Mb may have an outer
boundary that surrounds the first mask region Ma and corresponds to
an edge of the conductive pattern 22. The third mask region Md may
correspond to a region of the substrate 21 from which the
conductive material layer 22' may be removed, for example, a region
of the substrate 21 on which the conductive pattern 22 might not be
disposed. The fourth mask region Mc may be disposed between the
second mask region Mb and the third mask region Md.
[0083] The fourth mask region Mc may be disposed along the output
boundary of the second mask region Mb to surround the second mask
region Mb. Therefore, the output boundary of the second mask region
Mb may be defined as a boundary between the second mask region Mb
and the fourth mask region Mc.
[0084] According to an embodiment of the present invention, when
the photosensitive organic material layer 23''' includes a positive
photosensitive material, the first mask region Ma may transmit a
portion of light, the second mask region Mb may block light, the
third mask region Md may transmit light, and the fourth mask region
Mc may transmit a portion of light. Therefore, a light
transmittance of the first mask region Ma may be higher than a
light transmittance of the fourth mask region Mc.
[0085] According to an embodiment of the present invention, when
the photosensitive organic material layer 23''' includes a negative
photosensitive material, the first mask region Ma may transmit a
portion of light, the second mask region Mb may transmit
substantially all light, the third mask region Md may block
substantially all light, and the fourth mask region Mc may transmit
a portion of light. Therefore, a light transmittance of the fourth
mask region Mc may be higher than a light transmittance of the
first mask region Ma.
[0086] Referring to FIGS. 2A and 2B, a portion of the
photosensitive organic material layer 23''' irradiated with light
through the halftone mask 24 may be removed. The photosensitive
organic material layer 23''' may undergo a developing process prior
to removal. Portions of the photosensitive organic material layer
23''' corresponding to the first mask region Ma and fourth mask
region Mc may be partially removed and a portion of the
photosensitive organic material layer 23''' corresponding to the
third mask region Md may be substantially completely removed.
[0087] As a portion of the photosensitive organic material layer
23''' is removed, a first pattern 23'' including a first region
23a'', a second region 23b'', and a third region 23c'' may be
accordingly formed.
[0088] The first region 23a'' having a first thickness ha may
correspond to the first mask region Ma. The second region 23b''
having a second thickness hb may correspond to the second mask
region. The third region 23c'' having a third thickness hc may
correspond to the fourth mask region Mc. Since the portions of the
photosensitive organic material layer 23' corresponding to the
first mask region Ma and fourth mask region Mc may be partially
removed, but a portion of the photosensitive organic material layer
23'' corresponding to the second mask region Mb might not be
substantially removed, the second thickness hb of the second region
23b'' may be greater than the first thickness ha and the second
thickness hb of the second region 23b'' may be greater than the
third thickness hc. Accordingly, the third thickness hc of the
third region 23c'' may be smaller than the second thickness hb.
[0089] When the photosensitive organic material layer 23' includes
a positive photosensitive material, the light transmittance of the
first mask region Ma may be higher than the light transmittance of
the fourth mask region Mc. When the photosensitive organic material
layer 23'' includes a negative photosensitive material, the light
transmittance of the fourth mask region Mc may be higher than the
light transmittance of the first mask region Ma. Accordingly, the
portion of the photosensitive organic material layer 23'''
corresponding to the first mask region Ma may be removed to a
greater extent than the portion of the photosensitive organic
material layer 23' corresponding to the fourth mask region Mc.
Consequently, more of the portion of the photosensitive organic
material layer 23'' corresponding to the fourth mask region Mc may
remain than the portion of the photosensitive organic material
layer 23''' corresponding to the first mask region Ma and the third
thickness hc of the third region 23c'' may be greater than the
first thickness ha of the first region 23a''. As such, an average
thickness of the first region 23a'' may be less than an average
thickness of the third region 23c''.
[0090] Referring to FIG. 2C, the conductive pattern 22 may be
formed by wet etching the conductive material layer 22' of FIG. 2B
by using the first pattern 23'' as a hard mask. The conductive
pattern 22 may be disposed below the first pattern 23'' and lateral
surfaces of the conductive pattern 22 may be exposed.
[0091] The conductive material layer 22' of FIG. 2B may be etched
using the first pattern 23'' as a hard mask. Accordingly, a lower
surface of a portion of the third region 23c'' of the first pattern
23'' may be exposed. The portion of the third region 23c'' having
the lower surface exposed may be positioned on a void. For example,
an edge of the conductive pattern 22 may be indented from an edge
of the first pattern 23'' by a distance d. The distance d may be
about 0.7 .mu.m or greater. For example, the distance d may be
about 2 .mu.m or less.
[0092] Referring to FIGS. 2C and 2D, a portion of the first pattern
23'' may be removed so that the center region 22a of FIG. 2E of the
conductive pattern 22 may be exposed. For example, ashing may be
performed on the first pattern 23'' and thus the thickness of the
first pattern 23'' may decrease. For example, by ashing, the first
region 23a'' of the first pattern 23'' may be completely removed
and thus an upper surface of the center region 22a of FIG. 2E of
the conductive pattern 22 covered with the first region 23a'' may
be exposed. When the first region 23a'' of the first pattern 23''
is removed, the second region 23b'' and the third region 23c'' of
the first pattern 23'' may also be removed, but since the second
region 23b'' and the third region 23c'' may be thicker than the
first region 23a'', the second region 23b'' and the third region
23c'' might not be completely removed.
[0093] Consequently, a second pattern 23' exposing the upper
surface of the center region 22a of FIG. 2E of the conductive
pattern 22 may be formed. A first portion 23b' of the second
pattern 23' may correspond to a portion that remains after the
second region 23b'' of the first pattern 23'' is partially removed
by, for example, ashing. A second portion 23c' of the second
pattern 23' may correspond to a portion that remains after the
third region 23c'' of the first pattern 23'' is partially removed
by, for example, ashing. The second pattern 23' may cover the edge
region 22b of FIG. 2E of the conductive pattern 22 and the lateral
surfaces of the conductive pattern 22 may be exposed.
[0094] Referring to FIGS. 2D and 2E, the organic insulating layer
23 covering the lateral surfaces or the end 22c of the conductive
pattern 22 may be formed by reflowing the second pattern 23'. The
organic insulating layer 23 may expose the center region 22a of the
conductive pattern 22 and may cover the edge region 22b and the
lateral surfaces of the conductive pattern 22.
[0095] The second pattern 23' may be thermally reflowed by, for
example, by applying heat or infrared rays. To perform a reflow
process, the substrate 21 including the second pattern 23' may be
disposed on a hot plate. Since the hot plate delivers heat upwards
from the substrate 21, a portion of the second region 23c' of the
second pattern 23' may flow along the lateral surfaces of the
conductive pattern 22. The reflow process may also be performed by
heating the substrate 21 including the second pattern 23' within an
oven or irradiating the substrate 21 including the second pattern
23' with infrared rays.
[0096] When the end 22c of the conductive pattern 22 is exposed, a
short-circuit may occur between the conductive pattern 22 and a
conductive material layer formed by a different process. According
to an embodiment of the present invention, the organic insulating
layer 23 covering the lateral surfaces or the end 22c of the
conductive pattern 22 may be formed by reflowing the second pattern
23'. Thus, according to an embodiment of the present invention, the
conductive pattern 22 and the organic insulating layer 23 covering
the edge region 22b and the lateral surfaces of the conductive
pattern 22 may be formed using a single halftone mask. Thus,
manufacturing costs may be reduced and a manufacturing process may
be simplified, which may lead to a reduction in processing
time.
[0097] The second pattern 23' may be formed from the photosensitive
organic material layer 23''' including a photosensitive organic
material having a solvent. When the second pattern 23' is heated to
undergo a reflow process, the solvent within the photosensitive
organic material may be removed and at substantially the same time
the volume of the second pattern 23' may shrink. The second region
23b'' of the first pattern 23'' may be relatively thick and may
receive a strong shrinkage force during the volume shrinkage. If
the second pattern 23' includes substantially only the thick first
portion 23b' without the thin second portion 23c', the second
pattern 23' may be moved inwards due to the strong shrinkage force
and might not cover the lateral surfaces of the conductive pattern
22 due to a surface tension of the reflowed second pattern 23'.
When the second pattern 23' including substantially only the thick
first portion 23b' is melted due to reflow, the melted second
pattern 23' may break and at substantially the same time a void may
be generated on the lateral surfaces of the conductive pattern
22.
[0098] According to an embodiment of the present invention, the
second pattern 23' might not only include the thick first portion
23b' but may also include the thin second portion 23c' around the
thick first portion 23b'. The thin second portion 23c' of the
second pattern 23' may receive a weak shrinkage force compared with
the thick first portion 23b' thereof. Furthermore, since the second
portion 23c' may be relatively thin, the second portion 23c' may
melt prior to the thick first portion 23b' due to reflow. Since a
space below the thin second portion 23c' of the second pattern 23'
may be empty, when a reflow process starts, the thin second portion
23c' may melt first and thus a portion of the thin second portion
23c' may flow along the lateral surfaces of the conductive pattern
22 or may cover the lateral surfaces of the conductive pattern 22
due to gravity. Consequently, according to an embodiment of the
present invention, the lateral surfaces of the conductive pattern
22 may be completely covered due to the thin second portion 23c' of
the second pattern 23'. Thus, a short-circuit between a conductive
material layer formed by a different process and the lateral
surfaces or the end 22c of the conductive pattern 22 may be
prevented.
[0099] FIG. 3 is a cross-sectional view of an organic
light-emitting display according to an embodiment of the present
invention.
[0100] Referring to FIG. 3, an organic light-emitting display
device 100 may include a substrate 110. A thin film transistor TFT
may be disposed on the substrate 110. A via insulating layer 119
may cover the thin film transistor TFT. The organic light-emitting
display device 100 may further include a pixel electrode 131
disposed on the via insulating layer 119 and electrically connected
to the thin film transistor TFT. The pixel electrode 131 may
include a center region on which an organic emission layer 132 may
be disposed and an edge region around the center region. The
organic light-emitting display device 100 may further include a
pixel defining layer 140 exposing the center region of the pixel
electrode 131 and covering the edge region of the pixel electrode
131. The organic emission layer 132 may be disposed on the center
region of the pixel electrode 131. An opposite electrode 133 may be
disposed on the organic emission layer 132 and the pixel defining
layer 140. The pixel defining layer 140 may include an opening 140h
in which the center region of the pixel electrode 131 may be
exposed and may also include a first inclined portion 140a inclined
toward the center region of the pixel electrode 131 and a second
inclined portion 140b inclined in a different direction from the
first inclined portion 140a. An end 131a of the pixel electrode 131
may be positioned between the via insulating layer 119 and the
second inclined portion 140b.
[0101] The substrate 110 may include any of various materials, such
as glass, plastic, and metal. According to an embodiment of the
present invention, the substrate 110 may be flexible. The flexible
substrate 110 may be referred to as a substrate that may be easily
bent, folded, or rolled. The flexible substrate 110 may be formed
of ultra-thin glass, metal, or plastic. For example, when the
substrate 110 is formed of plastic, the substrate 110 may include
polyimide (P1), but embodiments of the inventive concept are not
limited thereto. A plurality of pixels may be arranged on the
substrate 110 and an organic light-emitting device OLED for
realizing an image may be disposed on each pixel.
[0102] A buffer layer 111 may be disposed on the substrate 110. The
buffer layer 111 may prevent permeation of impure elements and may
planarize the surface of the substrate 110. A barrier layer (not
shown) may be interposed between the substrate 110 and the buffer
layer 111.
[0103] The thin film transistor TFT may be disposed on the buffer
layer 111. The thin film transistor TFT may function as a portion
of a driving circuit unit for driving the organic light-emitting
device OLED. The driving circuit unit may further include a
capacitor, wiring and the like in addition to the thin film
transistor TFT.
[0104] The thin film transistor TFT may include an active layer 121
disposed on the buffer layer 111, a gate electrode 122 of which at
least a portion overlaps the active layer 121, a source electrode
123 electrically connected to a source region of the active layer
121 and a drain electrode 124 electrically connected to a drain
region of the active layer 121. The drain electrode 124 may be
electrically connected to the pixel electrode 131. A gate
insulating layer 113 may be interposed between the active layer 121
and the gate electrode 122 and an interlayer insulating layer 115
may be interposed between the gate electrode 122 and the source
electrode 123 and drain electrode 124.
[0105] The active layer 121 may include a semiconductor material,
for example, amorphous silicon (a-Si) or polycrystalline silicon
(poly-Si). However, embodiments of the inventive concept are not
limited thereto. According to an embodiment of the present
invention, the active layer 121 may include an organic
semiconductor material or an oxide semiconductor material.
[0106] The gate electrode 122 may be electrically connected to a
gate line that may apply an ON/OFF signal to the thin film
transistor TFT and the gate electrode 122 may be formed of a
low-resistance metal material. For example, the gate electrode 122
may be a single layer or multi-layer formed of a conductive
material including molybdenum (Mo), aluminum (Al), copper (Cu),
and/or titanium (Ti).
[0107] The source electrode 123 and drain electrode 124 may each
include a single layer or multiple layers formed of a conductive
material.
[0108] According to an embodiment of the present invention, the
thin film transistor TFT may be of a top gate type in which the
gate electrode 122 may be disposed on the active layer 121, but
embodiments of the inventive concept are not limited thereto.
According to an embodiment of the present invention, the thin film
transistor TFT may be of a bottom gate type in which the gate
electrode 122 may be disposed below the active layer 121.
[0109] The gate insulating layer 113 and the interlayer insulating
layer 115 may be a single layer or multiple layers formed of an
inorganic material. For example, the gate insulating layer 113 and
the interlayer insulating layer 115 may include silicon oxide
(SiO.sub.2), silicon nitride (SiNx), silicon oxynitride (SiON),
aluminum oxide (Al.sub.2O.sub.3), titanium oxide (TiO.sub.2),
tantalum oxide (Ta.sub.2O.sub.5), hafnium oxide (HfO.sub.2), and/or
zirconium oxide (ZrO.sub.2).
[0110] The via insulating layer 119 may cover the thin film
transistor TFT and may have a planarized upper surface in order to
mitigate a step difference caused by the thin film transistor TFT.
The via insulating layer 119 may include a single layer or may
include multiple layers formed of an organic material. However,
embodiments of the inventive concept are not limited thereto.
According to an embodiment of the present invention, the via
insulating layer 119 may include an inorganic insulating layer or
may include a stack of inorganic insulating layers and organic
insulating layers.
[0111] The pixel electrode 131 electrically connected to the thin
film transistor TFT through via holes VIA formed in the via
insulating layer 119 may be disposed on the via insulating layer
119. According to an embodiment of the present invention, the pixel
electrode 131 may be electrically connected to the drain electrode
124 of the thin film transistor TFT. However, embodiments of the
inventive concept are not limited thereto.
[0112] The pixel electrode 131 may be formed of a material having a
high work function. In bottom-emission type displays displaying an
image in a direction of the substrate 110, the pixel electrode 131
may include at least one transparent conductive oxide selected from
the group consisting of indium tin oxide (ITO), indium zinc oxide
(IZO), zinc oxide (ZnO), indium oxide (In.sub.2O.sub.3), indium
gallium oxide (IGO), and aluminum zinc oxide (AZO).
[0113] According to an embodiment of the present invention, in
top-emission type displays displaying an image in a direction of
the opposite electrode 133, the pixel electrode 131 may include at
least one transparent conductive oxide selected from the group
consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc
oxide (ZnO), indium oxide (In.sub.2O.sub.3), indium gallium oxide
(IGO), and aluminum zinc oxide (AZO) and may further include at
least one metal reflection layer selected from the group consisting
of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt),
palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium
(Ir), and chromium (Cr).
[0114] The pixel defining layer 140 may include the opening 140h
covering the edge region of the pixel electrode 131 and exposing
the center region of the pixel electrode 131. The pixel defining
layer 140 may further include the first inclined portion 140a
inclined toward the center region of the pixel electrode 131 and
the second inclined portion 140b inclined in a different direction
from that of the first inclined portion 140a. The first inclined
portion 140a may extend from a region P1 where an upper surface of
the pixel electrode 131 contacts the opening 140h. The second
inclined portion 140b may extend from the first inclined portion
140a toward a region P2 on an upper surface of the via insulating
layer 119 in a different inclination direction than that of the
first inclined portion 140a. The boundary between the first
inclined portion 140a and the second inclined portion 140b may be
defined as a region having a largest height in a vertical
cross-section. For example, the boundary between the first inclined
portion 140a and the second inclined portion 140b may be defined as
a region having an upper surface parallel to the substrate 110.
[0115] An upper surface of the first inclined portion 140a may
extend from the region P1, where the upper surface of the pixel
electrode 131 may contact the opening 140h in a direction away from
the substrate 110. For example, the first inclined portion 140a may
have a cross-section of which a height increases from the region P1
to the boundary between the first inclined portion 140a and second
inclined portion 140b. An upper surface of the second inclined
portion 140b may extend from the first inclined portion 140a to the
region P2 on the via insulating layer 119 in a direction toward the
substrate 110. For example, the second inclined portion 23b may
have a cross-section of which a height decreases from the boundary
between the first inclined portion 140a and second inclined portion
140b to the region P2. The direction away from the substrate 110
and the direction toward the substrate 110, as used herein, do not
mean only the direction exactly perpendicular to the upper surface
of the substrate 110 and may also include directions approximately
perpendicular to the upper surface of the substrate 110, including
directions inclined at a predetermined angle with respect to the
upper surface of the substrate 110.
[0116] The pixel defining layer 140 may expose an upper surface of
the center region of the pixel electrode 131 and may cover the edge
region of the pixel electrode 131 except for the center region
thereof. The pixel defining layer 140 may include a photosensitive
organic material, for example, polyimide (PI).
[0117] A portion of a lower surface of the organic insulating layer
140 may directly contact the upper surface of the pixel electrode
131 and the remaining portion thereof may directly contact the
upper surface of the via insulating layer 119. The portion of the
lower surface of the organic insulating layer 140 directly
contacting the upper surface of the pixel electrode 131 may have a
larger area than the remaining portion directly contacting the
upper surface of the via insulating layer 119.
[0118] The edge region of the pixel electrode 131 may be interposed
between the first inclined portion 140a of the pixel defining layer
140 and the via insulating layer 119. The edge region of the pixel
electrode 131 may also be interposed between at least a portion of
the second inclined portion 140b of the pixel defining layer 140
and the via insulating layer 119. For example, the end 131a of the
pixel electrode 131 may be positioned between the via insulating
layer 119 and the second inclined portion 140b. A distance d1 from
the region P1 on the upper surface of the pixel electrode 131 to
the end 131a of the pixel electrode 131 covered with the pixel
defining layer 140 may be greater than a distance d2 from the
region P2 on the upper surface of the via insulating layer 119 to
the end 131a of the pixel electrode 131.
[0119] According to an embodiment of the present invention, a first
angle .theta.1 between the upper surface of the pixel electrode 131
and the upper surface of the first inclined portion 140a may be
greater than a second angle .theta.2 between the upper surface of
the via insulating layer 119 and the upper surface of the second
inclined portion 140b. For example, the first angle .theta.1 may be
less than about 55.degree. and the second angle .theta.2 may be
less than about 35.degree.. A difference between the first angle
.theta.1 and the second angle .theta.2 may be about 5.degree. or
greater.
[0120] An angle of inclination of the upper surface of the first
inclined portion 140a with respect to the upper surface of the
pixel electrode 131 may vary according to locations on the first
inclined portion 140a. An angle of inclination of the upper surface
of the second inclined portion 140b with respect to the upper
surface of the pixel electrode 131 may vary according to locations
on the second inclined portion 140b. The first angle .theta.1 may
denote an angle of inclination of the upper surface of the first
inclined portion 140a at the region P1 on the upper surface of the
pixel electrode 131 and the second angle .theta.2 may denote an
angle of inclination of the upper surface of the second inclined
portion 140b at the region P2 on the upper surface of the via
insulating layer 119.
[0121] The organic emission layer 132 may be disposed on the center
region of the pixel electrode 131. The center region of the pixel
electrode 131 disposed on the upper surface of the organic emission
layer 132 may be referred to as a light-emission region. The center
region or the light-emission region of the pixel electrode 131 may
be defined as a region of the pixel electrode 131 not covered with
the pixel defining layer 140.
[0122] The organic emission layer 132 may include a low molecular
organic material or a high molecular organic material. At least one
of a hole injection layer (HIL), a hole transport layer (HTL), an
electron transport layer (ETL), or an electron injection layer
(EIL) in addition to the organic emission layer 132 may be further
interposed between the pixel electrode 131 and the opposite
electrode 133. According to an embodiment of the present invention,
various functional layers other than the aforementioned layers may
be further disposed between the pixel electrode 131 and the
opposite electrode 131.
[0123] The organic emission layer 132 may be disposed in
substantially each organic light-emitting device OLED and the
organic light-emitting device OLED may emit light of a red, green
or blue color according to the type of organic emission layer 132
included in the organic light-emitting device OLED. However,
embodiments of the inventive concept are not limited thereto and a
plurality of organic emission layers 132 may be disposed on a
single organic light-emitting device OLED. For example, organic
emission layers 132 respectively emitting light of at least two
primary colors of red, green, and blue may be stacked or mixed
vertically to emit white color light. The organic light-emitting
display 100 may further include a color converting layer or a color
filter that may covert the white light into a light of a
predetermined color. The red, green, and blue primary colors are
exemplary and thus a color combination for emitting white light is
not limited thereto.
[0124] The opposite electrode 133 may be disposed on the organic
emission layer 132 and may be formed of various conductive
materials. For example, the opposite electrode 133 may include a
single layer or may include multiple layers including at least one
of lithium (Li), calcium (Ca), lithium fluoride (LiF), aluminum
(Al), magnesium (Mg), or silver (Ag). In bottom-emission type
displays, the opposite electrode 133 may be a reflective electrode.
In top-emission type displays, the opposite electrode 133 may be a
transparent electrode or semitransparent electrode.
[0125] According to an embodiment of the present invention, a thin
layer encapsulation layer 150 including at least one organic layer
151 and at least one inorganic layer 152 may be disposed on the
opposite electrode 133 and may encapsulate the organic
light-emitting device OLED. The thin-film encapsulation layer 150
may encapsulate the organic light-emitting device OLED and may
prevent the organic light-emitting device OLED from being exposed
to external air or foreign materials. Since the thin-film
encapsulation layer 150 may be relatively thin, the thin-film
encapsulation layer 150 may be used as an encapsulating means for
flexible displays that may be bendable or foldable.
[0126] According to an embodiment of the present invention, the
inorganic layer 152 may include oxide, nitride, or oxynitride, such
as silicon nitride (SiNx), silicon oxide (SiO.sub.2) or silicon
oxynitride (SiOxNy). The inorganic layer 152 may block or reduce
permeation of foreign materials, such as moisture or oxygen, to the
organic light-emitting device OLED. The inorganic layer 152 may
directly contact the upper surface of the edge region of the
substrate 110. An edge region of the inorganic layer 152 may
contact the upper surface of the substrate 110 and detachment of
the inorganic layer 152 from the interlayer insulating layer 115
may be reduced or prevented, which may lead to the thin layer
encapsulation layer 150 being more effective.
[0127] The organic layer 151 of the thin layer encapsulation layer
150 may be disposed between the opposite electrode 133 and the
inorganic layer 152 and may block or reduce permeation of foreign
materials, such as moisture or oxygen, into the organic
light-emitting device OLED. The organic layer 151 may be used
together with the inorganic layer 152 to increase a level of
protection from foreign materials and may planarize an unsmooth
surface. According to an embodiment of the present invention, the
organic layer 151 may include any of various organic materials,
such as epoxy-based resin, acryl-based resin, or polyimide-based
resin.
[0128] According to an embodiment of the present invention, a
functional layer (not shown) and a protection layer may be further
disposed between the opposite electrode 133 and the thin layer
encapsulation layer 150. The functional layer may include a capping
layer and/or an LiF layer for increasing luminescent efficiency by
controlling the refractive index of visible light emitted from the
organic light-emitting device OLED. The protection layer may
include an inorganic material, such as aluminum oxide
(Al.sub.2O.sub.3).
[0129] FIGS. 4A to 4G are cross-sectional views illustrating a
method of manufacturing an organic light-emitting display of FIG. 3
according to an embodiment of the present invention.
[0130] Referring to FIG. 4A, the thin film transistor TFT may be
formed on the substrate 110.
[0131] The buffer layer 111 may be formed on the substrate 110. A
semiconductor material layer may be formed on the buffer layer 111
and the semiconductor material layer may then be patterned to
thereby form the active layer 121. The gate insulating layer 113
may be formed on the active layer 121. A conductive material layer
may be formed on the gate insulating layer 113 and patterned to
thereby form the gate electrode 122. At least a portion of the gate
electrode 122 may overlap the active layer 121.
[0132] The interlayer insulation layer 115 may be formed to cover
the gate electrode 122. The interlayer insulating layer 115 and the
gate insulating layer 113 may be substantially simultaneously
etched to thereby form a first contact hole C1 via and a second
contact hole C2 via in which some regions of the active layer 121
are exposed. According to an embodiment of the present invention,
the active layer 121 may include polycrystalline silicon (poly-Si)
and the regions of the active layer 121 exposed by the first
contact hole C1 and second contact hole C2 may be the source region
and the drain region of the active layer 121, respectively.
[0133] A conductive material layer may be formed on the interlayer
insulating layer 115 and patterned to thereby form the source
electrode 123 and the drain electrode 124 that may be respectively
electrically connected to the source region and the drain region of
the active layer 121.
[0134] Referring to FIG. 4B, a first insulating material layer may
cover the thin film transistor TFT. The first insulating layer may
be formed on the substrate 110 and patterned to thereby form the
via insulating layer 119. The via insulating layer may include the
via holes VIA through which portions of the drain electrode 124 of
the thin film transistor TFT may be exposed. The via insulating
layer 119 may include a single layer or may be multiple layers
formed of an organic material.
[0135] Referring to FIG. 4C, a conductive material layer 131' and a
second insulating material layer 140''' may be sequentially formed
on the via insulating layer 119. The conductive material layer 131'
may include at least one transparent conductive oxide selected from
the group consisting of indium tin oxide (ITO), indium zinc oxide
(IZO), zinc oxide (ZnO), indium oxide (In.sub.2O.sub.3, indium
gallium oxide (IGO), and aluminum zinc oxide (AZO). The conductive
material layer 131' may further include a metal reflective layer,
such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt),
palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium
(Ir), or chromium (Cr).
[0136] The second insulating material layer 140''' may include a
photosensitive organic material that is insulating and may be
referred to as a photosensitive organic material layer. The
photosensitive organic material may be a positive photosensitive
material of which a portion exposed to light may be removed. The
photosensitive organic material may alternatively be a negative
photosensitive material of which a portion not exposed to light may
be removed. The photosensitive organic material may include a
solvent to enable the photosensitive organic material to be
reflowed by applying, for example, heat or infrared rays thereto.
The photosensitive organic material may include, for example, an
olefin-based organic material, an acryl-based organic material, or
an imide-based organic material. For example, the photosensitive
organic material may include polyimide (PI).
[0137] Light may be radiated to the second insulating material
layer 140''' and a halftone mask M may be used to block and
transmit light according to a desired pattern. The halftone mask M
may include a first mask region Ma, a second mask region Mb, a
third mask region Md, and a fourth mask region Mc. The first mask
region Ma may correspond to the light-emission region of the pixel
electrode 131 of FIG. 3. The second mask region Mb may have an
outer boundary that surrounds the first mask region Ma and
corresponds to an edge of the pixel electrode 131. The third mask
region Md may correspond to a region of the via insulating layer
119 of FIG. 3 from which the conductive material layer 131' may be
removed, for example, a region of the via insulating layer 119 on
which the pixel electrode 131 might not be disposed. The fourth
mask region Mc may be disposed between the second mask region Mb
and the third mask region Md.
[0138] The fourth mask region Mc may be disposed along the output
boundary of the second mask region Mb to surround the second mask
region Mb. The output boundary of the second mask region Mb may be
defined as a boundary between the second mask region Mb and the
fourth mask region Mc.
[0139] According to an embodiment of the present invention, when
the second insulating material layer 140''' includes a positive
photosensitive material, the first mask region Ma may transmit a
portion of light, the second mask region Mb may block substantially
all light, the third mask region Md may transmit substantially all
light, and the fourth mask region Mc may transmit a portion of
light. Therefore, the light transmittance of the first mask region
Ma may be higher than the light transmittance of the fourth mask
region Mc.
[0140] According to an embodiment of the present invention, when
the second insulating material layer 140''' includes a negative
photosensitive material, the first mask region Ma may transmit a
portion of light, the second mask region Mb may transmit
substantially all light, the third mask region Md may block
substantially all light, and the fourth mask region Mc may transmit
a portion of light. Therefore, the light transmittance of the
fourth mask region Mc may be higher than the light transmittance of
the first mask region Ma.
[0141] Referring to FIGS. 4C and 4D, a portion of the second
insulating material layer 140''' irradiated with light through the
halftone mask M may be removed. The second insulating material
layer 140''' may undergo a developing process prior to removal.
Portions of the second insulating material layer 140'''
respectively corresponding to the first and fourth mask regions Ma
and Mc may be partially removed and a portion of the second
insulating material layer 140''' corresponding to the third mask
region Md may be substantially completely removed.
[0142] As a portion of the second insulating material layer 140'''
is removed, a first insulating pattern 140'' including a first
region 140a'', a second region 140b'', and a third region 140c''
may be formed. The first insulating pattern 140'' may be referred
to as a first pattern.
[0143] The second region 140b'' may correspond to the second mask
region Mb and a portion of the second insulating material layer
140''' corresponding to the second mask region Mb may be relatively
thick since the portion corresponding to the second mask region Mb
might not be substantially removed. The first region 140a'' may
correspond to the first mask region Ma and a portion of the second
insulating material layer 140''' corresponding to the first mask
region Ma may be thinner than the second region 140b'' since the
portion corresponding to the first mask region Ma may be partially
removed. The third region 140c'' may correspond to the fourth mask
region Mc and a portion of the second insulating material layer
140''' corresponding to the fourth mask region Mc may be thinner
than the second region 140b'' since the portion corresponding to
the fourth mask region may be partially removed.
[0144] When the second insulating material layer 140'' includes a
positive photosensitive material, the light transmittance of the
first mask region Ma may be higher than the light transmittance of
the fourth mask region Mc. When the second insulating material
layer 140'' includes a negative photosensitive material, the light
transmittance of the fourth mask region Mc may be higher than the
light transmittance of the first mask region Ma. Accordingly, more
of the portion of the second insulating material layer 140'
corresponding to the first mask region Ma may be removed than the
portion of the second insulating material layer 140'''
corresponding to the fourth mask region Mc. Consequently, more of
the portion of the second insulating material layer 140'''
corresponding to the fourth mask region Mc may remain than the
portion of the second insulating material layer 140'' corresponding
to the first mask region Ma and the third region 140c'' may be
thicker than the first region 140a''. As such, an average thickness
of the first region 140a'' may be lower than an average thickness
of the third region 140c''.
[0145] The pixel electrode 131 may be formed by wet etching the
conductive material layer 131' by using the first insulating
pattern 140'' as a hard mask. The pixel electrode 131 may be
disposed below the first insulating pattern 140'' and lateral
surfaces of the pixel electrode 131 may be exposed.
[0146] The conductive material layer 131' may be etched using the
first insulating pattern 140'' as a hard mask. Accordingly, the
lower surface of a portion of the third region 140c'' of the first
insulating pattern 140'' may be exposed. The portion of the third
region 140c'' having the lower surface exposed may be positioned on
a void. For example, the edge of the pixel electrode 131 may be
indented from an edge of the first insulating pattern 140'' by a
distance d. The distance d may be about 0.7 .mu.m or greater. The
distance d may be about 2 .mu.m or less.
[0147] Referring to FIGS. 4D and 4E, a portion of the first
insulating pattern 140'' may be removed such that the upper surface
of the light-emission region of the pixel electrode 131 is exposed.
For example, the first insulating pattern 140'' may undergo an
ashing process and thus the thickness of the first insulating
pattern 140'' may decrease. For example, through the ashing
process, the first region 140a'' of the first insulating pattern
140'' may be completely removed and thus the upper surface of the
light-emission region of the pixel electrode 131 covered with the
first region 140a'' may be exposed. When the first region 140a'' of
the first insulating pattern 140'' is removed, the second region
140b'' and the third region 140c'' of the first insulating pattern
140'' may also be removed. However, since the second region 140b''
and the third region 140c'' may be thicker than the first region
140a'', the second region 140b'' and the third region 140c'' might
not be completely removed.
[0148] Consequently, the second insulating pattern 140' may be
formed to expose the upper surface of the light-emission region of
the pixel electrode 131. The second insulating pattern 140' may be
referred to as a second pattern. A first portion 140b' of the
second insulating pattern 140' may correspond to a portion that may
remain after the second region 140b'' of the second region 140b''
of the first insulating pattern 140'' is partially removed. A
second portion 140c' of the second insulating pattern 140' may
correspond to a portion that may remain after the third region
140c'' of the third region 140c'' of the first insulating pattern
140'' is partially removed. The second insulating pattern 140' may
cover an edge region of the pixel electrode 131 and may expose the
lateral surfaces of the pixel electrode 131.
[0149] Referring to FIGS. 4E and 4F, the pixel defining layer 140
covering the lateral surfaces or the end 131a of the pixel
electrode 131 may be formed by reflowing the second insulating
pattern 140'. The pixel defining layer 140 may expose the
light-emission region of the pixel electrode 131 and cover the edge
region and the lateral surfaces of the pixel electrode 131.
[0150] The second insulating pattern 140' may be thermally reflowed
by applying, for example, heat or infrared rays. To perform a
reflow process, the substrate 110 including the second insulating
pattern 140' may be disposed on a hot plate. Since the hot plate
delivers heat upwards from the substrate 110, the second portion
140c' of the second insulating pattern 140' may flow along the
lateral surfaces of the conductive pattern 131. The reflow process
may also be performed by heating the substrate 110 including the
second insulating pattern 140' within an oven or irradiating the
substrate 110 including the second insulating pattern 140' with
infrared rays.
[0151] When the end 131a of the pixel electrode 131 is exposed, a
short circuit may occur between the pixel electrode 131 and the
opposite electrode 133 of FIG. 4G formed by a different process.
According to an embodiment of the present invention, the pixel
defining layer 140 covering the end 131a of the pixel electrode 131
may be formed by reflowing the second insulating pattern 140'.
Thus, according to a method of manufacturing an organic
light-emitting display 100 according to an embodiment of the
present invention, the pixel electrode 131 and the pixel defining
layer 140 covering the edge region and the lateral surfaces of the
pixel electrode 131 may be formed using a single mask. Thus,
manufacturing costs may be reduced and a manufacturing process may
be simplified, which may lead to a reduction in processing
time.
[0152] Referring to FIG. 4G, the organic light-emission layer 132
may be formed on the light-emission region of the pixel electrode
131. The light emission region may be a region of the pixel
electrode 131 not covered with the pixel defining layer 140.
[0153] The opposite electrode 133 may be formed on the organic
light-emission layer 132 and the pixel defining layer 140. The
opposite electrode 133 may also be formed on an exposed region of
the via insulating layer 119, which may be a region of the via
insulating layer 119 not covered with the pixel electrode 131 and
the pixel defining layer 140. The thin-film encapsulation layer 150
of FIG. 3 including at least one organic layer 151 and at least one
inorganic layer 152 may be formed on the opposite electrode
133.
[0154] FIG. 5A is a plan view illustrating a halftone mask that may
be used to manufacture an organic light-emitting display according
to an embodiment of the present invention. FIG. 5B is a magnified
cross-sectional view illustrating a pixel electrode according to an
embodiment of the present invention.
[0155] Referring to FIG. 5A, the halftone mask M for forming the
pixel electrode 131 of FIG. 3 and the pixel defining layer 140 of
FIG. 3 is illustrated. The pixel electrode 131 may be electrically
connected to the thin film transistor TFT through the via holes VIA
formed in the via insulating layer 119 of FIG. 3.
[0156] The halftone mask M may include a first mask region Ma, a
second mask region Mb, a third mask region Md, and a fourth mask
region Mc. The first mask region Ma may correspond to the
light-emission region of the pixel electrode 131. The second mask
region Mb may have an outer boundary that surrounds the first mask
region Ma and corresponds to an edge of the pixel electrode 131.
The third mask region Md may correspond to a region of the via
insulating layer 119 of FIG. 3 from which the conductive material
layer 131' may be removed, for example, a region of the via
insulating layer 119 on which the pixel electrode 131 is not
disposed. The fourth mask region Mc may be disposed between the
second and third mask regions Mb and Md along the output boundary
of the second mask region Mb to surround the second mask region
Mb.
[0157] The edge of the pixel electrode 131 may overlap the third
mask region Md. Since the pixel electrode 131 may be formed by
etching, the edge of the pixel electrode 131 may be indented a
certain distance from the outer boundary of the third mask region
Md.
[0158] Referring to FIG. 5B, the second insulating pattern 140' and
the pixel defining layer 140 on the pixel electrode 131 may overlap
with each other.
[0159] After light is radiated to the second insulating material
layer 140''' of FIG. 4C by using the halftone mask M, a portion of
the second insulating material layer 140''' of FIG. 4C may be
removed, and thus the first insulating pattern 140'' of FIG. 4D may
be formed. When the first insulating pattern 140'' of FIG. 4D
undergoes ashing, the second insulating pattern 140' may be formed.
When the second insulating pattern 140' is reflowed, the pixel
defining layer 140 may be formed.
[0160] The second insulating pattern 140' may be formed from the
second insulating material layer 140''' including a photosensitive
organic material having a solvent. When the second insulating
pattern 140' is reflowed by having heat or infrared rays applied
thereto, the solvent within the photosensitive organic material may
be removed and at substantially the same time the volume of the
second insulating pattern 140' may shrink. Referring to FIG. 5A,
the second insulating pattern 140' may have a donut shape and an
inner diameter of the second insulating pattern 140' may decrease
during the volume shrinkage.
[0161] A thick portion of the second insulating pattern 140' may
receive a strong shrinkage force during the volume shrinkage. If
the second insulating pattern 140' includes substantially only a
thick portion without having a thin portion, the second insulating
pattern 140' may be moved inwards due to the strong shrinkage force
and might not cover the lateral surfaces of the pixel electrode 131
due to a surface tension of the reflowed second insulating pattern
140'. When the second insulating pattern 140' including
substantially only a thick portion is melted due to reflow, the
melted second insulating pattern 140' may break and at
substantially the same time a void may be generated on the lateral
surfaces of the pixel electrode 131.
[0162] According to an embodiment of the present invention, as
shown in FIG. 5B, the second insulating pattern 140' may include a
thick portion and a thin portion positioned outside the thick
portion. A thin portion of the second insulating pattern 140' may
receive a weaker shrinkage force than the thick portion thereof.
Moreover, since the thin portion of the second insulating pattern
140' may be relatively thin, the thin portion may melt prior to the
thick portion due to reflow. Since a space adjacent to the thin
portion of the second insulating pattern 140' may be empty, when a
reflow process starts, the thin portion of the second insulating
pattern 140' may flow along the lateral surfaces of the pixel
electrode 131 or may cover the lateral surfaces of the pixel
electrode 131 due to gravity. Consequently, according to an
embodiment of the present invention, the lateral surfaces of the
pixel electrode 131 may be completely covered due to the thin
portion of the second insulating pattern 140'. Thus, a
short-circuit between the opposite electrode 133 of FIG. 3 formed
by a different process and the lateral surfaces or the end 131a of
the pixel electrode 131 may be prevented.
[0163] While one or more embodiments of the present invention have
been described with reference to the figures, it will be understood
by those of ordinary skill in the art that various changes in form
and details may be made therein without departing from the spirit
and scope of the instant disclosure.
* * * * *