U.S. patent application number 15/455409 was filed with the patent office on 2017-06-29 for method for producing vapor deposition mask, and method for producing organic semiconductor element.
This patent application is currently assigned to Dai Nippon Printing Co., Ltd.. The applicant listed for this patent is Dai Nippon Printing Co., Ltd.. Invention is credited to Hiroyuki NISHIMURA, Katsunari OBATA, Toshihiko TAKEDA.
Application Number | 20170186955 15/455409 |
Document ID | / |
Family ID | 48781585 |
Filed Date | 2017-06-29 |
United States Patent
Application |
20170186955 |
Kind Code |
A1 |
TAKEDA; Toshihiko ; et
al. |
June 29, 2017 |
METHOD FOR PRODUCING VAPOR DEPOSITION MASK, AND METHOD FOR
PRODUCING ORGANIC SEMICONDUCTOR ELEMENT
Abstract
A method for producing a vapor deposition mask capable of
satisfying both enhancement in definition and reduction in weight
even when a size is increased, and a method for producing an
organic semiconductor element capable of producing an organic
semiconductor element with high definition are provided. A vapor
deposition mask is produced by the steps of preparing a metal plate
with a resin layer in which a resin layer is provided on one
surface of a metal plate, forming a metal mask with a resin layer
by forming a slit that penetrates through only the metal plate, for
the metal plate in the metal plate with a resin layer, and
thereafter, forming a resin mask by forming openings corresponding
to a pattern to be produced by vapor deposition in a plurality of
rows lengthwise and crosswise in the resin layer by emitting a
laser from the metal mask side.
Inventors: |
TAKEDA; Toshihiko; (Tokyo,
JP) ; NISHIMURA; Hiroyuki; (Tokyo, JP) ;
OBATA; Katsunari; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Dai Nippon Printing Co., Ltd. |
Tokyo |
|
JP |
|
|
Assignee: |
Dai Nippon Printing Co.,
Ltd.
Tokyo
JP
|
Family ID: |
48781585 |
Appl. No.: |
15/455409 |
Filed: |
March 10, 2017 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
15158951 |
May 19, 2016 |
|
|
|
15455409 |
|
|
|
|
14923497 |
Oct 27, 2015 |
9379324 |
|
|
15158951 |
|
|
|
|
14370875 |
Jul 7, 2014 |
9203028 |
|
|
PCT/JP2013/050423 |
Jan 11, 2013 |
|
|
|
14923497 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/5012 20130101;
H01L 51/5221 20130101; G03F 7/20 20130101; G03F 7/32 20130101; B05B
12/20 20180201; H01L 51/56 20130101; H01L 51/0021 20130101; C23C
16/042 20130101; C23F 1/12 20130101; C23F 1/02 20130101; H01L
51/0011 20130101; C23F 1/14 20130101; C23C 14/042 20130101 |
International
Class: |
H01L 51/00 20060101
H01L051/00; H01L 51/56 20060101 H01L051/56 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 12, 2012 |
JP |
2012-004486 |
Claims
1. A method for producing a vapor deposition mask that is formed by
a metal mask provided with a slit, and a resin mask that is
positioned on a front surface of the metal mask, and has openings
corresponding to a pattern to be produced by vapor deposition being
stacked on each other, comprising the steps of: preparing a metal
plate with a resin layer in which a resin layer is provided on one
surface of the metal plate; forming a metal mask with a resin layer
by forming a slit that penetrates through only the metal plate, for
the metal plate in the metal plate with a resin layer; and forming
a resin mask by forming the openings corresponding to a pattern to
be produced by vapor deposition in the resin layer by emitting a
laser from the metal mask side.
2. The method for producing a vapor deposition mask according to
claim 1, wherein the step of forming the metal mask with a resin
layer comprises forming a resist pattern by coating a surface where
a resin layer is not provided, of the metal plate with the resin
layer, with a resist material, masking the resist material with use
of a mask in which a slit pattern is formed, forming a resist
pattern by performing exposure and development, subjecting the
metal plate to etching processing using the resist pattern as an
etching resistant mask, and cleaning and removing the resist
pattern after etching is finished.
3. The method for producing a vapor deposition mask according to
claim 1, wherein the step of forming the metal mask with a resin
layer comprises forming a resist pattern by coating a surface where
a resin layer is not provided, of the metal plate with a resin
layer, with a resist material, masking the resist material with use
of a mask in which a slit pattern is formed, forming a resist
pattern by performing exposure and development, subjecting the
metal plate to etching processing using the resist pattern as an
etching resistant mask, and allowing the resist pattern to remain
on a front surface of the metal plate even after etching is
finished.
4. The method for producing a vapor deposition mask according to
claim 1, further comprising the step of: fixing the metal mask with
a resin layer onto a frame containing a metal, after the metal mask
with a resin layer is obtained in the step of forming the metal
mask with a resin layer, wherein after the metal mask with a resin
layer is fixed to the frame, the step of forming the resin mask is
performed.
5. The method for producing a vapor deposition mask according to
claim 2, further comprising the step of: fixing the metal mask with
a resin layer onto a frame containing a metal, after the metal mask
with a resin layer is obtained in the step of forming the metal
mask with a resin layer, wherein after the metal mask with a resin
layer is fixed to the frame, the step of forming the resin mask is
performed.
6. The method for producing a vapor deposition mask according to
claim 3, further comprising the step of: fixing the metal mask with
a resin layer onto a frame containing a metal, after the metal mask
with a resin layer is obtained in the step of forming the metal
mask with a resin layer, wherein after the metal mask with a resin
layer is fixed to the frame, the step of forming the resin mask is
performed.
7. A method for producing an organic semiconductor element
comprising: manufacturing the vapor deposition mask that is
produced according to the production method according to claim 1 to
produce the organic semiconductor element.
8. A method for producing an organic semiconductor element
comprising: manufacturing the vapor deposition mask that is
produced according to the production method according to claim 2 to
produce the organic semiconductor element.
9. A method for producing an organic semiconductor element
comprising: manufacturing the vapor deposition mask that is
produced according to the production method according to claim 3 to
produce the organic semiconductor element.
10. A method for producing an organic semiconductor element
comprising: manufacturing the vapor deposition mask that is
produced according to the production method according to claim 4 to
produce the organic semiconductor element.
11. A method for producing an organic semiconductor element
comprising: manufacturing the vapor deposition mask that is
produced according to the production method according to claim 5 to
produce the organic semiconductor element.
12. A method for producing an organic semiconductor element
comprising: manufacturing the vapor deposition mask that is
produced according to the production method according to claim 6 to
produce the organic semiconductor element.
13. A method for producing a vapor deposition mask that is formed
by a metal mask provided with a slit, and a resin mask that is
positioned on a front surface of the metal mask, and has openings
corresponding to a pattern to be produced by vapor deposition being
stacked on each other, comprising the steps of: preparing a metal
plate; coating the metal plate with a coating solution containing a
resin; drying the coating solution to form a resin layer on one
surface of the metal plate; forming a metal mask with a resin layer
by forming a slit that penetrates through only the metal plate, for
the metal plate in the metal plate with a resin layer; and forming
a resin mask by forming the openings corresponding to a pattern to
be produced by vapor deposition in the resin layer by emitting a
laser from the metal mask side.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 15/158,951, filed May 19, 2016, which is a continuation of U.S.
application Ser. No. 14/923,497, filed Oct. 27, 2015, which is a
division of U.S. application Ser. No. 14/370,875, filed Jul. 7,
2014, now U.S. Pat. No. 9,203,028, issued Dec. 1, 2015, which in
turn is the National Stage of International Application No.
PCT/JP2013/050423, filed Jan. 11, 2013, which designated the United
States, the entireties of which are incorporated herein by
reference.
FIELD OF THE INVENTION
[0002] The present invention relates to a method for producing a
vapor deposition mask, and a method for producing an organic
semiconductor element.
BACKGROUND OF THE INVENTION
[0003] Conventionally, in production of an organic EL element, a
vapor deposition mask that is composed of a metal formed by a
number of microscopic slits being arranged in parallel with one
another at microscopic spaces in a region that should be subjected
to vapor deposition, for example, has been used in formation of an
organic layer of an organic EL element or a cathode electrode.
While in the case of using the vapor deposition mask, the vapor
deposition mask is placed on a substrate front surface that should
be subjected to vapor deposition and is held by using a magnet from
a back surface, the rigidity of the slits is extremely small, and
therefore, distortion easily occurs to the slits when the vapor
deposition mask is held on the substrate front surface, which
becomes an obstacle to enhancement in definition or upsizing of the
products in which the slit lengths are large.
[0004] Various studies have been made on the vapor deposition masks
for preventing distortion of slits, and, for example, Patent
Literature 1 proposes a vapor deposition mask including a base
plate that also serves a first metal mask including a plurality of
openings, a second metal mask including a number of microscopic
slits in regions to cover the aforementioned openings, and a mask
pulling and holding device that positions the second metal mask on
the base plate in a state in which the second metal mask is pulled
in the longitudinal direction of the slits. Namely, the vapor
deposition mask with two kinds of metal masks being combined is
proposed. It is indicated that according to the vapor deposition
mask, slit precision can be ensured without occurrence of
distortion to the slits.
[0005] Incidentally, in recent years, with upsizing of the products
using organic EL elements or increase in substrate sizes, a demand
for upsizing are also growing with respect to vapor deposition
masks, and the metal plates for use in production of the vapor
deposition masks composed of metals are also upsized. However, with
the present metal processing technique, it is difficult to form
slits in a large metal plate with high precision, and even if
distortion in slit portions can be prevented by the method proposed
in the above described Patent Literature 1 or the like, the method
or the like cannot respond to enhancement in definition of the
slits. Further, in the case of use of a vapor deposition mask
composed of only a metal, the mass thereof also increases with
upsizing, and the total mass including a frame also increases,
which becomes a hindrance to handling.
Citation List
[0006] Patent Literature 1:
[0007] Japanese Patent Laid-Open No. 2003-332057
SUMMARY OF THE INVENTION
[0008] The present invention is made in the light of the situation
as above, and has main problems of providing a method for producing
a vapor deposition mask that can satisfy both enhancement in
definition and reduction in weight even when a size is increased,
and of providing a method for producing an organic semiconductor
element that can produce the organic semiconductor element with
high precision.
[0009] The present invention for solving the above described
problem is a method for producing a vapor deposition mask that is
formed by a metal mask provided with a slit, and a resin mask that
is positioned on a front surface of the metal mask, and has
openings corresponding to a pattern to be produced by vapor
deposition arranged by lengthwise and crosswise in a plurality of
rows being stacked on each other, and includes the steps of
preparing a metal plate with a resin layer in which a resin layer
is provided on one surface of the metal plate, forming a metal mask
with a resin layer by forming a slit that penetrates through only
the metal plate, for the metal plate in the metal plate with a
resin layer, and therefore, forming a resin mask by forming the
openings corresponding to a pattern to be produced by vapor
deposition in a plurality of rows lengthwise and crosswise in the
resin layer by emitting a laser from the metal mask side.
[0010] In the above described invention, the step of forming the
metal mask with a resin layer is a step of forming a resist pattern
by coating a surface where a resin layer is not provided, of the
metal plate with a resin layer with a resist material, masking the
resist material with use of a mask in which a slit pattern is
formed, and forming a resist pattern to performing exposure and
development, subjecting the metal plate to etching processing with
use of the resist pattern as an etching resistant mask, and
cleaning and removing the resist pattern after etching is
finished.
[0011] Further, on the other hand, in the invention described
above, the resist pattern may be allowed to remain as it is without
being cleaned and removed.
[0012] Further, after the step of forming the metal mask with a
resin layer, the step of fixing the metal mask with a resin layer
onto a frame containing a metal is further included, and after the
metal mask with a resin layer is fixed to the frame, the step of
forming the resin mask may be performed.
[0013] Further, the present invention for solving the above
described problem is a method for producing an organic
semiconductor element, wherein the vapor deposition mask that is
produced according to the production method having the above
described features is used.
[0014] According to the method for producing a vapor deposition
mask of the present invention, the vapor deposition mask capable of
satisfying both enhancement in definition and reduction in weight
even when a size is increased can be produced with high yield.
Further, according to the method for producing an organic
semiconductor element of the present invention, an organic
semiconductor element can be produced with high precision.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIGS. 1(a)-(e) are a process chart for describing a first
production method of the vapor deposition mask of the present
invention;
[0016] FIGS. 2(a)-(e) are a process chart for describing a second
method for producing the vapor deposition mask of the present
invention;
[0017] FIG. 3(a) is a front view of the vapor deposition mask that
is produced according to the first production method, seen from a
metal mask side, and FIG. 3(b) is an enlarged sectional view of a
vapor deposition mask 100 that is produced according to the first
production method;
[0018] FIG. 4 is an enlarged sectional view of the vapor deposition
mask that is produced according to the second production
method;
[0019] FIGS. 5(a) and (b) are front views of the vapor deposition
mask that is produced according to the production method of the
present invention, seen from a metal mask side;
[0020] FIGS. 6(a)-(c) are schematic sectional views showing a
relation of a shadow and a thickness of the metal mask;
[0021] FIGS. 7(a)-(d) are partial schematic sectional views showing
a relation of a slit of the metal mask, and an opening of a resin
mask; and
[0022] FIG. 8 is a partial schematic sectional view showing a
relation of the slit of the metal mask and the opening of the resin
mask.
DETAILED DESCRIPTION OF THE INVENTION
[0023] Hereinafter, a method for producing a vapor deposition mask
of the present invention will be specifically described with use of
the drawings. Note that in the following explanation, process steps
will be mainly described first, and description of a material and
the like will be made together when the vapor deposition mask that
is produced according to the production method is described.
[0024] First Production Method
[0025] FIGS. 1(a)-(e) are a process chart for describing a first
production method of the vapor deposition mask of the present
invention. Note that FIGS. 1(a)-(e) are all sectional views.
[0026] As shown in FIG. 1(a), a metal plate 60 with a resin layer
in which a resin layer 67 is provided on one surface of the metal
plate 61 is prepared. Here, a method for preparing the metal plate
60 with a resin layer is not specially limited, and the metal plate
60 with a resin layer that is commercially available may be
purchased, or the metal plate 60 with a resin layer may be made by
providing a resin layer on a front surface of the metal plate. As a
method for providing the resin layer on the front surface of the
metal plate, the metal plate is coated with a coating solution
containing a resin to be a resin layer, and is dried, whereby the
metal plate 60 with a resin layer can be obtained. In place of the
method, a metal plate with a resin layer also can be obtained by
bonding a resin plate onto the metal plate. As the method for
bonding the metal plate and the resin plate, various tackiness
agents may be used, or a resin plate having self-adhesiveness may
be used, for example. Note that it is known that a resin causes
change with passage of time for a certain time period after
molding, and therefore, a so-called aging time period needs to be
provided until the shape is fixed. Since it is conceivable that in
the commercially available metal plate 60 with a resin layer, a
so-called aging time period has elapsed, use of a commercially
available metal plate with a resin layer is preferable from the
viewpoint of yield.
[0027] Next, slits that penetrate through only the metal plate are
formed for a metal plate 61 in the aforementioned metal plate 60
with a resin layer, and thereby a metal mask 68 with a resin layer
is formed. The process step in the present method is not specially
limited, and may be any process step as long as desired slits can
be formed in only the metal mask. The metal mask 68 with a resin
layer mentioned in the description of the present application means
the metal mask with a resin layer in which slits are formed in the
metal plate of the above described metal plate 60 with a resin
layer.
[0028] FIGS. 1(b)-(d) show an example of the process of forming the
metal mask 68 with a resin layer. As shown in FIG. 1(b), a surface
where a resin layer 67 is not provided, of the aforementioned metal
plate 60 with a resin layer, is coated with a resist material 62,
and the resist material is masked with use of a mask 63 in which a
slit pattern is formed, and is exposed and developed. Thereby, as
shown in FIG. 1(c), a resist pattern 64 is formed on a front
surface of the metal plate 67. Subsequently, with use of the resist
pattern 64 as an etching resistant mask, only the metal plate 60 is
subjected to etching processing, and after etching is finished, the
aforementioned resist pattern is cleaned and removed. Thereby, as
shown in FIG. 1(d), a metal mask 66 (the metal mask 68 with a resin
layer) in which slits 65 are formed in only the metal plate 67 can
be obtained.
[0029] A method for masking the resist material is not specially
limited, and only the surface side of the metal plate 60 with a
resin layer where the resin layer 67 is not provided may be coated
with the resist material 62, or both surfaces of the metal plate 60
with a resin layer may be coated with the resist material 62 (not
illustrated). Further, a dry film method that bonds dry film resist
onto the surface of the metal plate 60 with a resin layer, where
the resin layer 67 is not provided, or both the surfaces of the
metal plate 60 with a resin layer also can be used. The method for
coating the resist material 62 is not specially limited, and when
only the surface side where the resin layer 67 is not provided, of
the metal plate 60 with a resin layer is coated with the resist
material 62, a spin coat method, and a spray coat method can be
used. Meanwhile, in the case of using the metal plate 60 with a
resin layer in a long sheet shape, a dip coat method or the like
that can coat a resist material by a roll-to-roll method is
preferably used. Note that with a dip coat method, both the
surfaces of the metal plate 60 with a resin layer are coated with
the resist material 62.
[0030] Note that as the resist material, a resist material with
excellent treatability and with desired resolution is preferably
used. Further, the etching agent for use at the time of etching
processing is not specially limited, and a known etching agent can
be properly selected.
[0031] A method for etching the metal plate 60 is not specially
limited, and for example, a wet etching method such as a spray
etching method that sprays an etching agent at a predetermined
spray pressure from an injection nozzle, an immersion etching
method that immerses the metal plate 60 into an etching solution
filled with an etching agent, and a spin etching method that drops
an etching agent, and a dry etching method using gas, plasma or the
like can be used.
[0032] Next, a laser is emitted through the slits 65 from the metal
mask 66 side of the metal plate 68 with a resin layer, and openings
69 corresponding to a pattern to be produced by vapor deposition
are formed in a plurality of rows lengthwise and crosswise in the
resin layer 67, whereby a resin mask 70 is made. A laser apparatus
that is used here is not specially limited, and a conventionally
known laser apparatus may be used. Thereby, a vapor deposition mask
80 as shown in FIG. 1(e) is obtained. Note that the pattern to be
produced by vapor deposition in the description of the present
application means a pattern to be produced with use of the vapor
deposition mask, and for example, in the case of use of the vapor
deposition mask in formation of an organic layer of an organic EL
element, the pattern is in a shape of the organic layer. The same
shall apply to production methods of other embodiments
hereinafter.
[0033] Second Production Method
[0034] FIGS. 2(a)-(e) are a process chart for describing a second
production method of the vapor deposition mask of the present
invention. Note that FIGS. 2(a)-(e) are all sectional views.
[0035] In the first production method shown in FIGS. 1(a)-(e), a
resist pattern 64 that is used as the etching mask at the time of
forming the metal mask 66 is removed, but the resist pattern 64 may
be allowed to remain without being removed as shown in FIG. 2(d)
and FIG. 2(e). The other process steps, namely, FIGS. 2(a) to (c)
are similar to the process steps in FIGS. 1(a) to (e), and
therefore, explanation will be omitted here.
[0036] Note that in the above described first and second production
methods, the metal mask 68 with a resin layer may be fixed to a
frame containing a metal, after the metal mask 66 (the metal mask
68 with a resin layer) is formed, namely, between (d) and (e) of
FIGS. 1(a)-(e) and FIGS. 2(a)-(e). By fixing the metal mask with a
resin layer to a frame at a stage before the openings 69 of the
resin mask 70 that controls the pattern shape that is finally
produced by vapor deposition are formed, a mounting error that
occurs when the vapor deposition mask is fixed to the frame can be
made zero. Note that in a conventionally known method, the metal
mask in which openings are determined is fixed to the frame while
being pulled, and therefore, precision of position coordinates of
the openings is reduced.
[0037] Further, when the openings 69 are provided in the resin
layer of the metal mask 68 with a resin layer in a state fixed to a
frame according to a laser processing method, a reference sheet
provided in advance with a pattern to be produced by vapor
deposition, namely, a pattern corresponding to the openings 69 to
be formed is prepared, and laser irradiation corresponding to the
pattern on the reference sheet may be performed from the metal mask
66 side, in a state in which the reference sheet is bonded to the
surface where the metal mask 66 is not provided, of the metal mask
68 with a resin layer. According to the method, the openings 69 can
be formed in the resin layer 67 in a so-called face-to-face state
in which laser irradiation is performed while the pattern on the
reference sheet bonded to the metal mask 68 with a resin layer is
being watched, and the resin mask 70 having the openings 69 with
high definition in which the dimensional precision of the openings
is extremely high can be formed. Further, in this method, formation
of the openings 69 is performed in the state fixed to the frame,
and therefore, the vapor deposition mask that is excellent in not
only dimensional precision but also in positional precision can be
made.
[0038] Note that when the above described method is used, the
pattern on the reference sheet needs to be recognizable with a
laser irradiation apparatus through the resin layer 67 from the
metal mask 66 side. As the resin layer 67, use of a resin layer
having transparency is needed when the resin layer has a certain
degree of thickness, but when the resin layer has a preferable
thickness with consideration given to an influence on a shadow as
will be described later, for example, a thickness of about 3 .mu.m
to 25 .mu.m, the pattern on the reference sheet can be recognized
even if the resin layer is a colored resin layer.
[0039] A method for bonding the resin layer and the reference sheet
is not specially limited. For example, when the metal mask 66 is of
a magnetic substance, a magnet or the like is arranged at a rear
side of the reference sheet, and the resin layer 67 and the
reference sheet can be bonded to each other by being attracted.
Besides this, the resin layer 67 and the reference sheet can be
bonded with use of an electrostatic adsorbing method or the like.
As the reference sheet, a TFT substrate having a predetermined
pattern, a photo mask and the like can be cited, for example.
[0040] According to each of the first and second production methods
of the present invention as above, the vapor deposition mask that
can satisfy both enhancement in definition and reduction in weight
can be produced with high yield even when the size is increased.
Further, according to one embodiment of the present invention, the
positional precision of the frame and the vapor deposition mask 100
can be enhanced. Further, by forming the opening 69 with use of the
reference sheet, the opening 69 that is extremely excellent in
positional precision can be made.
[0041] More specifically, in the production method of the present
invention, the vapor deposition mask 100 in which the resin mask 70
and the metal mask 66 are stacked is produced. Here, when a mass of
the vapor deposition mask 100 that is produced according to the
production method of the present invention, and a mass of the vapor
deposition mask that is composed of only a metal and is
conventionally known are compared on the assumption that
thicknesses of the entire vapor deposition masks are the same, the
mass of the vapor deposition mask 100 of the present invention is
lighter by an amount of a part of the metal material of the
conventionally known vapor deposition mask, which is replaced with
a resin material. Further, in order to reduce weight by using the
vapor deposition mask composed of only a metal, it is necessary to
reduce the thickness of the vapor deposition mask, but when the
thickness of the vapor deposition mask is reduced, distortion
sometimes occurs to the vapor deposition mask, and reduction in
durability sometimes occurs when upsizing the vapor deposition
mask. Meanwhile, according to the vapor deposition mask according
to the present invention, even when the thickness of the entire
vapor deposition mask is increased to satisfy distortion and
durability at the time of the mask being upsized, reduction in
weight can be achieved more than the vapor deposition mask that is
formed of only a metal by the presence of the resin mask 70.
[0042] Further, in the production method of the present invention,
the resin mask 70 is obtained by irradiating the resin layer 67, in
which formation of the openings with higher definition is enabled
as compared with a metal material, with a laser, and therefore, the
vapor deposition mask 100 having the openings 69 with high
definition can be produced.
Slimming Step
[0043] Further, in the production method of the present invention,
a slimming step may be performed between the steps described above,
or after the steps. The step is an optional step in the production
method of the present invention, and is the step of optimizing the
thickness of the metal mask 66, and the thickness of the resin mask
70. The preferable thicknesses of the metal mask 66 and the resin
mask 70 may be properly set in preferable ranges that will be
described later, and the detailed explanation will be omitted
here.
[0044] For example, when as the metal plate 60 with a resin layer,
a metal plate with a resin layer having a certain degree of
thickness is used, excellent durability and transportability can be
given when the metal plate 60 with a resin layer and the metal mask
68 with a resin layer are transported, and when the vapor
deposition mask 100 that is produced according to the above
described production method is transported, during the production
process. Meanwhile, in order to prevent generation of a shadow or
the like, the thickness of the vapor deposition mask 100 that is
obtained according to the production method of the present
invention is preferably an optimum thickness. The slimming step is
a useful step in the case of optimizing the thickness of the vapor
deposition mask 100 while satisfying durability and
transportability during the production process or after the
process.
[0045] Slimming of the metal plate 61 to be the metal mask 66 and
the metal mask 66, namely, optimization of the thickness of the
metal mask can be realized by etching the surface at the side that
is not in contact with the resin layer 67, of the metal plate 61,
or the surface at the side that is not in contact with the resin
layer 67 or the resin mask 70, of the metal mask 66 by using the
etching agent capable of etching the metal plate 61 and the metal
mask 66, between the steps described above, or after the steps.
[0046] Slimming of the resin layer 67 to be the resin mask 70 and
the resin mask 70, namely, optimization of the thicknesses of the
resin layer 67 and the resin mask 70 is similar to the above, and
can be realized by etching the surface at the side that is not in
contact with the metal plate 61 and the metal mask 66, of the resin
layer 70, or the surface at the side that is not in contact with
the metal mask 66, of the resin mask 70 by using the etching agent
capable of etching the materials of the resin layer 67 and the
resin mask 70 between any of the steps described above, or after
the steps. Further, after the vapor deposition mask 100 is formed,
both the metal mask 66 and the resin mask 70 are subjected to
etching processing, whereby the thicknesses of both of them also
can be optimized.
[0047] In the slimming step, the etching agent for etching the
resin layer 67 or the resin mask 70 can be properly set in
accordance with the resin material of the resin layer 67 or the
resin mask 70, and is not specially limited. For example, when a
polyimide resin is used as the resin material for the resin layer
67 or the resin mask 70, an alkali aqueous solution in which sodium
hydroxide or potassium hydroxide is dissolved, hydrazine and the
like can be used, as the etching agent. As the etching agent, a
commercially available product also can be directly used, and as
the etching agent for a polyimide resin, TPE3000 made by Toray
Engineering Co., Ltd. or the like is usable.
[0048] Vapor Deposition Mask Produced According to First Production
Method
[0049] FIG. 3(a) is a front view of the vapor deposition mask
produced according to the aforementioned first production method,
seen from the metal mask side, and FIG. 3(b) is an enlarged
sectional view of the vapor deposition mask 100 produced according
to the aforementioned first production method. Note that in these
drawings, in order to emphasize the slits provided in the metal
mask and the openings provided in the vapor deposition mask, the
ratios thereof to the entire body are illustrated to be large. Note
that for convenience of explanation, in the forms shown in FIGS.
3(a)-(b) to FIGS. 6(a)-(c), the metal mask is designated by
reference sign 10, and the resin mask is designated by reference
sign 20, and the metal mask 10 can be directly replaced with the
metal mask 66 described in the production method of the above
described present invention, whereas the resin mask 20 can be
directly replaced with the metal mask 70 described in the
production method of the above described present invention.
[0050] As shown in FIG. 3(a), the vapor deposition mask 100 that is
produced according to the first production method of the present
invention adopts a configuration in which the metal mask 10
provided with the slits 15, and the resin mask 20 that is
positioned on a front surface of the metal mask 10 (an undersurface
of the metal mask 10 in the case shown in FIG. 3(b)), and has the
openings 25 corresponding to the pattern to be produced by vapor
deposition arranged by lengthwise and crosswise in a plurality of
rows are stacked. Hereinafter, respective members will be described
specifically.
Resin Mask
[0051] The resin mask 20 is composed of a resin, and as shown in
FIG. 3(b), the openings 25 corresponding to a pattern to be
produced by vapor deposition are arranged by lengthwise and
crosswise in a plurality of rows at the positions overlapping the
slit 15. Further, while in the present invention, the example in
which the openings are arranged by lengthwise and crosswise in a
plurality of rows is cited and described, the openings 25 can be
provided in the positions overlapping the slits, and when the slits
are arranged in only a single row in the lengthwise direction or
the crosswise direction, the openings 25 can be provided at the
positions overlapping the slit 15 in the single row.
[0052] For the resin mask 20, a conventionally known resin material
can be properly selected and used, and while the material is not
especially limited, a material that enables formation of the
opening 25 with high definition by laser processing or the like,
has a low rate of dimensional change and a low rate of humidity
absorption under heat and with passage of time, and is lightweight,
is preferably used. As such materials, a polyimide resin, a
polyamide resin, a polyamide-imide resin, a polyester resin, a
polyethylene resin, a polyvinylalcohol resin, a polypropylene
resin, a polycarbonate resin, a polystyrene resin, a
polyacrylonitrile resin, an ethylene-vinyl acetate copolymer resin,
an ethylene-vinyl alcohol copolymer resin, an ethylene-methacrylic
acid copolymer resin, a polyvinyl chloride resin, a polyvinylidene
chloride resin, cellophane, an ionomer resin and the like can be
cited. Among the materials illustrated in the above, the resin
materials with the thermal expansion coefficients of 16
ppm/.degree. C. or less are preferable, the resin materials with
rates of humidity absorption of 1.0% or less are preferable, and
the resin materials including both the conditions are especially
preferable. Accordingly, the resin layers 67 in FIGS. 1(a)-(e) and
FIGS. 2(a)-(e) become the resin masks 20 in the future, and
therefore, the resin layers composed of, for example, the
preferable resin materials illustrated in the above are preferably
used.
[0053] While the thickness of the resin mask 20 is not especially
limited, the resin mask 20 is preferably as thin as possible in
order to prevent occurrence of an insufficient vapor deposition
portion, namely, a vapor deposition portion with a film thickness
smaller than the intended vapor deposition film thickness, a
so-called shadow, in the pattern that is produced by vapor
deposition, when vapor deposition is performed with use of the
vapor deposition mask of the present invention. However, when the
thickness of the resin mask 20 is less than 3 .mu.m, a defect such
as a pinhole easily occurs, and the risk of deformation or the like
increases. Meanwhile, when the thickness of the resin mask 20
exceeds 25 .mu.m, generation of a shadow can arise. With this point
taken into consideration, the thickness of the resin mask 20 is
preferably from 3 .mu.m to 25 .mu. inclusive. By setting the
thickness of the resin mask 20 within this range, the defect such
as a pinhole and the risk of deformation or the like can be
reduced, and generation of a shadow can be effectively prevented.
In particular, the thickness of the resin mask 20 is set to be from
3 .mu.m to 10 .mu.m inclusive, more preferably, from 4 .mu.m to 8
.mu.m inclusive, whereby the influence of a shadow at the time of
forming a high-definition pattern exceeding 300 ppi can be
prevented more effectively. Accordingly, the resin layers 67 in
FIGS. 1(a)-(e) and FIGS. 2(a)-(e) become the resin masks 20 in the
future, and therefore, the thicknesses of the resin layers 67 are
preferably set at the thicknesses described above. Note that the
resin layer 67 may be joined to the metal plate via a tackiness
agent layer or an adhesive agent layer, or the resin layer 67 and
the metal plate may be directly joined to each other, but when the
resin layer and the metal plate are joined to each other via a
tackiness agent layer or an adhesive agent layer, the total
thickness of the resin layer 67 and the tackiness agent layer, or
the resin layer 67 and the adhesive agent layer is preferably set
to be within a range from 3 .mu.m to 25 .mu.m inclusive in
consideration of the shadow described above.
[0054] The shape and the size of the opening 25 are not especially
limited, and can be the shape and the size corresponding to the
pattern to be produced by vapor deposition. Further, as shown in
FIG. 2(a), a pitch P1 in a crosswise direction of the adjacent
openings 25, and a pitch P2 in a lengthwise direction can be also
properly set in accordance with the pattern to be produced by vapor
deposition. Accordingly, when the openings are formed by laser
irradiation in FIGS. 1(a)-(e) and FIGS. 2(a)-(e), the above
described pitches P1 and P2 may be properly designed.
[0055] The positions at which the openings 25 are provided and the
number of the openings 25 are not specially limited, and a single
opening 25 may be provided at a position overlapping the slit 15,
or a plurality of openings 25 may be provided in the lengthwise
direction, or the crosswise direction. For example, as shown in
FIG. 5(a), when the slit extends in the lengthwise direction, two
or more of the openings 25 that overlap the slit 15 may be provided
in the crosswise direction.
[0056] A sectional shape of the opening 25 is not specially
limited, and end surfaces that face each other of the resin mask
forming the opening 25 may be substantially parallel with each
other, but the sectional shape of the opening 25 is preferably is
the shape having broadening toward a vapor deposition source. In
other words, the sectional shape of the opening 25 preferably has a
taper surface having broadening toward the metal mask 10 side. By
making the sectional shape of the opening 25 have the above
configuration, a shadow can be prevented from being generated in
the pattern that is produced by vapor deposition when vapor
deposition is performed with use of the vapor deposition mask of
the present invention. While a taper angle 0 can be properly set
with the thickness or the like of the resin mask 20 taken into
consideration, an angle connecting a lower bottom distal end in the
opening of the resin mask and an upper bottom distal end in the
opening of the same resin mask is preferably within a range from
25.degree. to 65.degree.. In particular, within this range, the
angle (.theta.) is preferably an angle smaller than a vapor
deposition angle of a vapor deposition machine to be used.
Furthermore, in FIG. 3(b) and FIG. 4, an end surface 25a that forms
the opening 25 shows a linear shape, but the end surface 25a is not
limited thereto, and may be in a curved shape protruding outward,
namely, a shape of the entire opening 25 may be in a bowl shape.
The opening 25 that has the sectional shape like this can be formed
by performing multistage laser irradiation that properly adjusts
the irradiation position of the laser and irradiation energy of the
laser at the time of formation of the opening 25, or changes the
irradiation position stepwise.
[0057] Further, in the present invention, as the configuration of
the vapor deposition mask 100, the resin mask 20 is used.
Therefore, when vapor deposition is performed with use of the vapor
deposition mask 100, very high heat is applied to the openings 25
of the resin mask 20, and the risk of a gas being generated from
end surfaces 25a (see FIG. 3(b)) that form the opening 25 of the
resin mask 20 to reduce the degree of vacuum in the vapor
deposition apparatus or the like can arise. Accordingly, with this
point taken into consideration, the end surfaces 25a that form the
opening 25 of the resin mask 20 are preferably provided with a
barrier layer 26 as shown in FIG. 3(b). By forming the barrier
layer 26, a gas can be prevented from being generated from the end
surfaces 25a that form the opening 25 of the resin mask 20.
[0058] As the barrier layer 26, a thin film layer or a vapor
deposition layer of an inorganic oxide, an inorganic nitride or a
metal can be used. As an inorganic oxide, oxides of aluminum,
silicon, indium, tin and magnesium can be used, and as a metal,
aluminum or the like can be used. A thickness of the barrier layer
26 is preferably about 0.05 .mu.m to 1 .mu.m. Accordingly, in the
production methods of the present invention described in FIGS.
1(a)-(e) and FIGS. 2(a)-(e), a step of forming the barrier layer 26
as described above may be performed after the vapor deposition mask
80 is obtained.
[0059] Furthermore, the barrier layer preferably covers a front
surface at the vapor deposition source side, of the resin mask 20.
The front surface at the vapor deposition source side, of the resin
mask 20 is covered with the barrier layer 26, whereby a barrier
property thereof is further enhanced. The barrier layer is
preferably formed by various PVD methods and CVD methods in the
case of an inorganic oxide and an inorganic nitride. In the case of
a metal, the barrier layer is preferably formed by a vacuum vapor
deposition method. Note that the front surface at the vapor
deposition source side, of the resin mask 20 mentioned here may be
the entire front surface at the vapor deposition source side, of
the resin mask 20, or may be only portions exposed from the metal
mask in the front surface at the vapor deposition source side, of
the resin mask 20.
Metal Mask
[0060] The metal mask 10 is composed of a metal, and the slits 15
that extend in the lengthwise direction or the crosswise direction
are arranged in a plurality of rows in the position overlapping the
openings 25, in other words, in the position where all of the
openings 25 arranged in the resin mask 20 are visible, when seen
from a front of the metal mask 10. Note that in FIG. 3(a), the
slits 15 that extend in the lengthwise direction of the metal mask
10 are continuously arranged in the crosswise direction. Further,
in the present invention, the example in which the slits 15 that
extend in the lengthwise direction or the crosswise direction are
arranged in a plurality of rows is cited and described, but the
slits 15 may be arranged in only a single row in the lengthwise
direction or in the crosswise direction.
[0061] While a width W of the slit 15 is not specially limited, the
width W is preferably designed to be shorter than at least the
pitch between the adjacent openings 25. More specifically, as shown
in FIG. 2(a), when the slit 15 extends in the lengthwise direction,
the width W in the crosswise direction of the slit 15 is preferably
made shorter than the pitch P1 of the openings 25 adjacent to each
other in the crosswise direction. Similarly, though not
illustrated, when the slit 15 extends in the crosswise direction, a
width in the lengthwise direction of the slit 15 is preferably made
shorter than a pitch P2 of the openings 25 adjacent to each other
in the lengthwise direction. Meanwhile, a length L in the
lengthwise direction in a case of the slit 15 extending in the
lengthwise direction is not specially limited, and can be properly
designed in accordance with the lengthwise length of the metal mask
10 and the positions of the openings 25 that are provided in the
resin mask 20. Accordingly, in the production methods of the
present invention described in FIGS. 1(a)-(e) and FIGS. 2(a)-(e),
the metal plate is designed as described above when the metal plate
is etched.
[0062] Further, the slit 15 that continuously extends in the
lengthwise direction, or in the crosswise direction may be divided
into a plurality of portions by a bridge 18 as shown in FIG. 5(b).
Note that FIG. 5(b) is a front view of the vapor deposition mask
100 seen from the metal mask 10 side, and shows an example in which
the single slit 15 continuously extending in the lengthwise
direction shown in FIG. 3(a) are divided into a plurality of
portions (slits 15a and 15b) by the bridge 18. While a width of the
bridge 18 is not specially limited, the width of the bridge 18 is
preferably around 5 .mu.m to 20 .mu.m. By setting the width of the
bridge 18 to be within this range, the rigidity of the metal mask
10 can be effectively enhanced. The arrangement position of the
bridge 18 is not specially limited, but the bridge 18 is preferably
arranged in such a manner that the slit after being divided is
overlaid on the two or more of the openings 25.
[0063] While a sectional shape of the slit 15 that is formed in the
metal mask 10 is not specially limited, either, the sectional shape
is preferably a shape that has broadening toward the vapor
deposition source as shown in FIG. 3(b), similarly to the opening
25 in the above described resin mask 20. Accordingly, in the
production methods of the present invention described in FIGS.
1(a)-(e) and FIGS. 2(a)-(e), etching is preferably performed so
that the sectional shape as described above is obtained when the
metal plate is etched.
[0064] The material of the metal mask 10 is not specially limited,
and the conventionally known material in the field of the vapor
deposition mask can be properly selected and used, and, for
example, a metal material such as stainless steel, an iron-nickel
alloy, and an aluminum alloy can be cited. Above all, an invar
material that is an iron-nickel alloy can be preferably used since
an invar material is hardly deformed by heat.
[0065] Further, when the vapor deposition mask 100 at a front side
of the substrate needs to be attracted by a magnetic force by
arranging a magnet or the like at a rear side of the substrate when
vapor deposition is performed onto the substrate with use of the
vapor deposition mask 100 of the present invention, the metal mask
10 is preferably formed of a magnetic substance. As the metal mask
10 of a magnetic substance, pure iron, carbon steel, W steel, Cr
steel, Co steel, KS steel, MK steel, NKS steel, Cunico steel, an
AL-Fe alloy and the like can be cited. Further, when the material
itself that forms the metal mask 10 is not of a magnetic substance,
magnetism may be given to the metal mask 10 by dispersing powder of
the above described magnetic substance into the material.
[0066] While the thickness of the metal mask 10 is not specially
limited, the thickness is preferably around 5 .mu.m to 100 .mu.m.
In the case of consideration being given to prevention of a shadow
at the time of vapor deposition, the thickness of the metal mask 10
is preferably small, but when the thickness of the metal mask 10 is
made thinner than 5 .mu.m, the risk of breakage and deformation is
increased, and handling is likely to be difficult. However, since
in the present invention, the metal mask 10 is integrated with the
resin mask 20, the risks of breakage and deformation can be reduced
even if the thickness of the metal mask 10 is very small such as 5
.mu.m, and a metal mask is usable if the thickness thereof is 5
.mu.m or more. Note that the case in which the thickness of the
metal mask 10 is made larger than 100 .mu.m is not preferable
because generation of a shadow can arise. Accordingly, in the
production methods of the present invention described in FIGS.
1(a)-(e) and FIGS. 2(a)-(e), when the metal plate with a resin
layer is prepared, the metal plate with a resin layer is preferably
prepared with those described above taken into consideration.
[0067] Hereinafter, with use of FIG. 6(a) to FIG. 6 (c), a relation
of generation of a shadow, and the thickness of the metal mask 10
will be specifically described. As shown in FIG. 6(a), when the
thickness of the metal mask 10 is small, the vapor deposition
material that is released toward a vapor deposition target from a
vapor deposition source passes through the slit 15 of the metal
mask 10 and the opening 25 of the resin mask 20 without colliding
with an inner wall surface of the slit 15 of the metal mask 10 and
a surface of the metal mask 10 at a side where the resin mask 20 is
not provided, and reaches the vapor deposition target. Thereby,
formation of the vapor deposition pattern with a uniform film
thickness onto the vapor deposition target is enabled. Namely,
generation of a shadow can be prevented. Meanwhile, as shown in
FIG. 6(b), when the thickness of the metal mask 10 is large, for
example, when the thickness of the metal mask 10 is a thickness
exceeding 100 .mu.m, a part of the vapor deposition material that
is released from the vapor deposition source collides with the
inner wall surfaces of the slit 15 of the metal mask 10, and the
surface of the metal mask 10 at the side where the resin mask 20 is
not formed, and cannot reach the vapor deposition target. As the
vapor deposition material that cannot reach the vapor deposition
target increases more, an undeposited portion having a film
thickness smaller than the intended vapor deposition film thickness
occurs to the vapor deposition target more, namely, a shadow is
generated.
[0068] In order to prevent generation of a shadow sufficiently, the
sectional shape of the slit 15 is preferably made a shape having
broadening toward the vapor deposition source, as shown in FIG.
6(c). By adopting the sectional shape like this, the vapor
deposition material can be caused to reach the vapor deposition
target without the vapor deposition material that is released from
the vapor deposition source colliding with the surface of the slit
15 and the inner wall surface of the slit 15 even if the thickness
of the entire vapor deposition mask is made large with the
objective of prevention of distortion that can occur to the vapor
deposition mask 100, or enhancement of durability. More
specifically, the angle that is formed by a straight line
connecting the lower bottom distal end in the slit 15 of the metal
mask 10 and the upper bottom distal end in the slit 15 of the same
metal mask 10, and the bottom surface of the metal mask 10 is
preferably within a range of 25.degree. to 65.degree.. In
particular, in this range, an angle that is smaller than the vapor
deposition angle of the vapor deposition machine to be used is
preferable. By adopting the sectional shape like this, the
deposition material can be caused to reach the vapor deposition
target without the vapor deposition material released from the
vapor deposition source colliding with the inner wall surface of
the slit 15 even when the thickness of the metal mask 10 is made
relatively large with the objective of prevention of distortion
that can arise in the vapor deposition mask 100, or enhancement of
durability. Thereby, generation of a shadow can be prevented more
effectively. Note that FIGS. 6(a)-(c) are partial schematic
sectional views for explaining the relation of generation of a
shadow and the slit 15 of the metal mask 10. Note that in the form
shown in FIG. 6 (c), the slit 15 of the metal mask 10 has the shape
having broadening toward the vapor deposition source side, and the
end surfaces that face each other of the opening of the resin mask
20 are substantially parallel with each other, but in order to
prevent generation of a shadow more effectively, the sectional
shapes of both the slit of the metal mask 10 and the opening 25 of
the resin mask 20 are preferably the shapes having broadening
toward the vapor deposition source side. Accordingly, in the method
for producing the vapor deposition mask of the present invention,
the slit 15 of the metal mask 10 and the opening 25 of the resin
mask 20 are preferably produced so that the sectional shapes of the
slit of the metal mask and the opening of the resin mask become the
shapes having broadening toward the vapor deposition source
side.
[0069] FIGS. 7(a) to (d) are partial schematic sectional views
showing the relation of the slit of the metal mask and the opening
of the resin mask, and in the forms that are illustrated, the
sectional shapes of entire openings that are formed by the slits 15
of the metal masks and the openings 25 of the resin masks show step
shapes. As shown in FIGS. 7(a) to (d), the sectional shapes of the
entire openings are formed into step shapes having broadening
toward the vapor deposition source sides, whereby generation of a
shadow can be prevented effectively.
[0070] Accordingly, in the method for producing the vapor
deposition mask of the present invention, the vapor deposition mask
is preferably produced in such a manner that the sectional shape of
the entire opening that is formed by the slit of the metal mask and
the opening 25 of the resin mask becomes a step shape.
[0071] In the sectional shapes of the slit 15 of the metal mask and
the resin mask 20, the end surfaces that face each other may be
substantially parallel with each other as shown in FIG. 7(a), but
as shown in FIGS. 7(b) and (c), only any one of the slit 15 of the
metal mask and the opening of the resin mask may have a sectional
shape having broadening toward the vapor deposition source side.
Note that as described in the above, in order to prevent generation
of a shadow more effectively, both of the slit 15 of the metal
mask, and the opening 25 of the resin mask preferably have the
sectional shapes having broadening toward the vapor deposition
source side as shown in FIG. 3(b) and FIG. 7(d).
[0072] A width of a flat portion (reference sign (X) in FIGS. 7(a)
to (d) in the section formed into the above described step shape is
not specially limited, but when the width of the flat portion (X)
is less than 1 .mu.m, the effect of prevention of shadow generation
tends to reduce due to interference of the slit of the metal mask.
Accordingly, with this point taken into consideration, the width of
the flat portion (X) is preferably 1 .mu.m or more. A preferable
upper limit value is not specially limited, and can be properly set
with consideration given to the size of the opening of the resin
mask, the space between the adjacent openings and the like, and as
one example, the preferable upper limit value is approximately 20
.mu.m.
[0073] Note that p FIGS. 7(a) to (d) described above each shows an
example in which the single opening 25 that overlaps the slit 15 is
provided in the crosswise direction when the slit extends in the
lengthwise direction, but as shown in FIG. 8, two or more of the
openings 25 that overlap the slit 15 may be provided in the
crosswise direction when the slit extends in the lengthwise
direction. In FIG. 8, both the slit 15 of the metal mask and the
opening 25 of the resin mask have sectional shapes having
broadening toward the vapor deposition source side, and two or more
of the openings 25 that overlap the slit 15 are provided in the
crosswise direction.
Vapor Deposition Mask Produced According to Second Production
Method
[0074] FIG. 4 is an enlarged sectional view of the vapor deposition
mask that is produced according to the second production
method.
[0075] As shown in FIG. 4, the vapor deposition mask 100 produced
by the second production method differs from the vapor deposition
mask produced by the first production method shown in FIGS.
1(a)-(e) in only the point that a resist pattern 30 remains in the
vapor deposition mask 100 produced by the second production method,
and is the same as the vapor deposition mask produced by the first
production method in the other points. Accordingly, explanation of
the metal mask 10 and the resin mask 20 will be omitted.
Resist Pattern
[0076] The resist pattern 30 is a resist pattern that is used as an
etching mask when the metal plate is etched, and is composed of a
resist material. The pattern is substantially the same as the slits
formed in the metal mask 10. Note that the sectional shape of an
opening 31 of the resist pattern 30 is preferably made a shape
having broadening toward the vapor deposition source as shown in
FIG. 4.
[0077] Since in the vapor deposition mask that is produced by the
second production method like this, both the surfaces of the metal
mask are covered with a resin, expansion uniformly occurs in both
the surfaces thereof even when the resin is expanded by heat at the
time of vapor deposition, and therefore, curl hardly occurs as
compared with the case in which a resin is present on only one
surface, which is preferable. In order to exhibit the effect
efficiently, the materials of both of the resin layer provided on
the metal plate and the resist material are preferably selected so
that the difference between the thermal coefficients of the
material of the resin composing the resin mask, that is the resin
layer provided on the metal plate and the material of the resist
material composing the resist pattern becomes small.
Method for Producing Organic Semiconductor Element
[0078] A method for producing an organic semiconductor element of
the present invention is characterized by forming an organic
semiconductor element by using the vapor deposition mask 100
produced according to the production method of the present
invention described in the above. As for the vapor deposition mask
100, the vapor deposition mask 100 produced according to the
production method of the present invention described above can be
directly used, and therefore, the detailed explanation here will be
omitted. According to the vapor deposition mask of the present
invention described above, an organic semiconductor element having
a pattern with high definition can be formed by the openings 25
with high dimensional precision which are included by the vapor
deposition mask 100. As the organic semiconductor element that is
produced according to the production method of the present
invention, an organic layer of an organic EL element, a light
emitting layer, a cathode electrode and the like, for example, can
be cited. In particular, the method for producing the organic
semiconductor element of the present invention can be favorably
used in production of the R, G and B light emitting layers of the
organic EL element which are required to have pattern precision
with high definition.
REFERENCE SIGNS LIST
[0079] 100 Vapor deposition mask [0080] 10, 66 Metal mask [0081] 15
Slit [0082] 18 Bridge [0083] 20, 70 Resin mask [0084] 25 Opening
[0085] 60 Metal plate with resin layer [0086] 61 Metal plate [0087]
62 Resist material [0088] 64 Resist pattern [0089] 67 Resin layer
[0090] 68 Metal plate with resin layer [0091] 80 Vapor deposition
mask
* * * * *