U.S. patent application number 15/116201 was filed with the patent office on 2017-06-15 for conductive layer in a semiconductor apparatus, display substrate and display apparatus having the same, and fabricating method thereof.
This patent application is currently assigned to BOE TECHNOLOGY GROUP CO., LTD.. The applicant listed for this patent is BOE TECHNOLOGY GROUP CO., LTD.. Invention is credited to Feng Zhang.
Application Number | 20170170199 15/116201 |
Document ID | / |
Family ID | 54453998 |
Filed Date | 2017-06-15 |
United States Patent
Application |
20170170199 |
Kind Code |
A1 |
Zhang; Feng |
June 15, 2017 |
CONDUCTIVE LAYER IN A SEMICONDUCTOR APPARATUS, DISPLAY SUBSTRATE
AND DISPLAY APPARATUS HAVING THE SAME, AND FABRICATING METHOD
THEREOF
Abstract
The present application discloses a conductive layer in a
semiconductor apparatus, comprising a metal sub-layer and an
anti-reflective coating over the metal sub-layer for reducing light
reflection on the metal sub-layer; wherein the anti-reflective
coating comprises a light absorption sub-layer on the metal
sub-layer for reducing light reflection by absorption and a light
destructive interference sub-layer on a side of the light
absorption layer distal to the metal sub-layer for reducing light
reflection by destructive interference; and the metal sub-layer is
made of a material comprising M1, wherein M1 is a single metal or a
combination of metals; the light absorption sub-layer is made of a
material comprising M2O.sub.aN.sub.b, wherein M2 is a single metal
or a combination of metals, a>0, and b.gtoreq.0; the light
destructive interference sub-layer is made of a material comprising
M3O.sub.c, wherein M3 is a single metal or a combination of metals,
and c>0; the light absorption sub-layer has a refractive index
larger than that of the light destructive interference
sub-layer.
Inventors: |
Zhang; Feng; (Beijing,
CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
BOE TECHNOLOGY GROUP CO., LTD. |
Beijing |
|
CN |
|
|
Assignee: |
BOE TECHNOLOGY GROUP CO.,
LTD.
Beijing
CN
|
Family ID: |
54453998 |
Appl. No.: |
15/116201 |
Filed: |
April 6, 2016 |
PCT Filed: |
April 6, 2016 |
PCT NO: |
PCT/CN2016/078560 |
371 Date: |
August 2, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/3276 20130101;
G02F 1/13362 20130101; G02F 1/136286 20130101; H01L 51/5281
20130101; G02F 2201/38 20130101; G02F 2001/134372 20130101; H01L
27/322 20130101; G02F 2001/134381 20130101; H01L 23/528 20130101;
H01L 23/53238 20130101; H01L 23/53223 20130101; H01L 23/53266
20130101; G02F 2201/08 20130101; H01L 27/124 20130101; H01L 21/2855
20130101; H01L 51/5284 20130101; H01L 27/1259 20130101; G02F
1/133502 20130101; H01L 21/76877 20130101; H01L 21/7685 20130101;
G02F 2001/136222 20130101 |
International
Class: |
H01L 27/12 20060101
H01L027/12; H01L 21/768 20060101 H01L021/768; H01L 21/285 20060101
H01L021/285; H01L 23/528 20060101 H01L023/528 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 27, 2015 |
CN |
201510446770.3 |
Claims
1. A conductive layer in a semiconductor apparatus, comprising a
metal sub-layer and an anti-reflective coating over the metal
sub-layer for reducing light reflection on the metal sub-layer;
wherein the anti-reflective coating comprises a light absorption
sub-layer on the metal sub-layer for reducing light reflection by
absorption and a light destructive interference sub-layer on a side
of the light absorption layer distal to the metal sub-layer for
reducing light reflection by destructive interference; and the
metal sub-layer is made of a material comprising M1, wherein M1 is
a single metal or a combination of metals; the light absorption
sub-layer is made of a material comprising M2O.sub.aN.sub.b,
wherein M2 is a single metal or a combination of metals, a>0,
and b.gtoreq.0; the light destructive interference sub-layer is
made of a material comprising M3O.sub.c, wherein M3 is a single
metal or a combination of metals, and c>0; the light absorption
sub-layer has a refractive index larger than that of the light
destructive interference sub-layer.
2. The conductive layer of claim 1, wherein the light destructive
interference sub-layer has a higher oxygen molar content than the
light absorption sub-layer.
3. The conductive layer of claim 1, wherein the metal layer, the
light absorption sub-layer and the light destructive interference
sub-layer have at least one metal element in common.
4. The conductive layer of claim 1, wherein the light destructive
interference sub-layer has a thickness of substantially about
(k*.lamda./4n), wherein k is an odd positive integer, .lamda. is a
wavelength of an ambient light, and n is the refractive index of
the light destructive interference sub-layer.
5. The conductive layer of claim 1, wherein the anti-reflective
coating further comprises one or more additional sub-layer on a
side of the light destructive interference sub-layer distal to the
light absorption sub-layer, refractive indexes of the light
destructive interference sub-layer and the one or more additional
sub-layer sequentially decrease along a direction away from the
light absorption sub-layer.
6. The conductive layer of claim 5, wherein the one or more
additional sub-layer is made of a material comprising a metal
oxide; oxygen molar contents of the light destructive interference
sub-layer and the one or more additional sub-layer sequentially
increase along a direction away from the light absorption
sub-layer.
7. The conductive layer of claim 5, wherein the metal layer, the
light absorption sub-layer, the light destructive interference
sub-layer, and the one or more additional sub-layer have at least
one metal element in common.
8. The conductive layer of claim 1, wherein the light absorption
sub-layer has a refractive index in the range of about 3 to about
4; the light destructive interference sub-layer has a refractive
index in the range of about 1 to about 2.
9. The conductive layer of claim 1, wherein M1 is selected from the
group consisting of aluminum, chromium, copper, molybdenum,
titanium, an aluminum/neodymium alloy, a copper/molybdenum alloy, a
molybdenum/tantalum alloy, a molybdenum/niobium alloy;
M2O.sub.aN.sub.b is selected from the group consisting of
AlO.sub.xN.sub.y, CrO.sub.xN.sub.y, CuO.sub.xN.sub.y,
MoO.sub.xN.sub.y, TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w; and M3O.sub.c is selected from the
group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x,
TiO.sub.x, Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z.
10. A substrate comprising the conductive layer of claim 1.
11. (canceled)
12. (canceled)
13. (canceled)
14. (canceled)
15. A display apparatus comprising the substrate of claim 10.
16. A method of fabricating a conductive layer in a semiconductor
apparatus comprising a metal sub-layer and an anti-reflective
coating for reducing light reflection on the metal sub-layer, the
method comprising: forming a metal sub-layer on a substrate using a
material comprising M1, wherein M1 is a single metal or a
combination of metals; forming a light absorption sub-layer over
the metal sub-layer for reducing light reflection by absorption
using a material comprising M2O.sub.aN.sub.b, wherein M2 is a
single metal or a combination of metals, a>0, and b.gtoreq.0;
forming a light destructive interference sub-layer on a side of the
light absorption sub-layer distal to the metal sub-layer for
reducing light reflection by destructive interference using a
material comprising M3O.sub.c, wherein M3 is a single metal or a
combination of metals, and c>0; wherein the light absorption
sub-layer has a refractive index larger than that of the light
destructive interference sub-layer.
17. The method of claim 16, wherein the light destructive
interference sub-layer has an oxygen molar content higher than the
light absorption sub-layer.
18. The method of claim 16, wherein the light absorption sub-layer
and the light destructive interference sub-layer are formed in a
single sputtering process using a same sputtering target under
different sputtering atmospheres achieved by adjusting a flow rate
of one or more reaction gas.
19. The method of claim 18, wherein the single sputtering process
comprises sequentially sputtering a metal material in a first
atmosphere corresponding to formation of the light absorption
sub-layer and a second atmosphere corresponding to formation of the
light destructive interference sub-layer; the first atmosphere
comprises an oxygen-containing reactive gas or a combination of an
oxygen-containing reactive gas and a nitrogen-containing reactive
gas; the second atmosphere is free of the nitrogen-containing
reactive gas and has a higher oxygen content than the first
atmosphere.
20. The method of claim 19, wherein the metal sub-layer, the light
absorption sub-layer, and the light destructive interference
sub-layer are formed in a single sputtering process, the single
sputtering process further comprises sputtering the metal material
in a third atmosphere prior to sputtering the metal material in the
first atmosphere.
21. The method of claim 16, wherein the metal layer, the light
absorption sub-layer and the light destructive interference
sub-layer have at least one metal element in common.
22. The method of claim 16, wherein the light destructive
interference sub-layer is formed to have a thickness of
substantially about (k*.lamda./4n), wherein k is an odd positive
integer, .lamda. is a wavelength of an ambient light, and n is the
refractive index of the light destructive interference
sub-layer.
23. (canceled)
24. (canceled)
25. (canceled)
26. The method of claim 16, wherein the metal layer, the light
absorption sub-layer, and the light destructive interference
sub-layer are formed in a single sputtering process using a same
sputtering target under different sputtering atmospheres achieved
by adjusting a flow rate of one or more reaction gas.
27. The method of claim 16, wherein the light absorption sub-layer
has a refractive index in the range of about 3 to about 4; the
light destructive interference sub-layer has a refractive index in
the range of about 1 to about 2.
28. (canceled)
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority to Chinese Patent
Application No. 201510446770.3, filed Jul. 27, 2015, the contents
of which are incorporated by reference in the entirety.
TECHNICAL FIELD
[0002] The present invention relates to display technology, more
particularly, to a conductive layer in a semiconductor apparatus, a
display substrate and a display apparatus having the same, and a
fabricating method thereof.
BACKGROUND
[0003] In a display substrate, metal lines such as data lines,
touch electrodes, and common electrode lines are made of metals
having high conductivity, which are materials having high light
reflectance. Accordingly, a black matrix array is required in a
package substrate (e.g., a color filter substrate) to block the
light reflection from these metal lines. Typically, a black matrix
is made of a black material having low light reflectance, such as
carbon, molybdenum, chromium, etc.
SUMMARY
[0004] In one aspect, the present invention provides a conductive
layer in a semiconductor apparatus comprising a metal sub-layer and
an anti-reflective coating over the metal sub-layer for reducing
light reflection on the metal sub-layer.
[0005] Optionally, the anti-reflective coating comprises a light
absorption sub-layer on the metal sub-layer for reducing light
reflection by absorption and a light destructive interference
sub-layer on a side of the light absorption layer distal to the
metal sub-layer for reducing light reflection by destructive
interference.
[0006] Optionally, the metal sub-layer is made of a material
comprising M1, wherein M1 is a single metal or a combination of
metals; the light absorption sub-layer is made of a material
comprising M2O.sub.aN.sub.b, wherein M2 is a single metal or a
combination of metals, a>0, and b.gtoreq.0; the light
destructive interference sub-layer is made of a material comprising
M3O.sub.c, wherein M3 is a single metal or a combination of metals,
and c>0; the light absorption sub-layer has a refractive index
larger than that of the light destructive interference
sub-layer.
[0007] Optionally, the light destructive interference sub-layer has
a higher oxygen molar content than the light absorption
sub-layer.
[0008] Optionally, the metal layer, the light absorption sub-layer
and the light destructive interference sub-layer have at least one
metal element in common.
[0009] Optionally, the light destructive interference sub-layer has
a thickness of substantially about (k*.lamda./4n), wherein k is an
odd positive integer, .lamda. is a wavelength of an ambient light,
and n is the refractive index of the light destructive interference
sub-layer.
[0010] Optionally, the anti-reflective coating further comprises
one or more additional sub-layer on a side of the light destructive
interference sub-layer distal to the light absorption sub-layer,
refractive indexes of the light destructive interference sub-layer
and the one or more additional sub-layer sequentially decrease
along a direction away from the light absorption sub-layer.
[0011] Optionally, the one or more additional sub-layer is made of
a material comprising a metal oxide; oxygen molar contents of the
light destructive interference sub-layer and the one or more
additional sub-layer sequentially increase along a direction away
from the light absorption sub-layer.
[0012] Optionally, the metal layer, the light absorption sub-layer,
the light destructive interference sub-layer, and the one or more
additional sub-layer have at least one metal element in common.
[0013] Optionally, the light absorption sub-layer has a refractive
index in the range of about 3 to about 4; the light destructive
interference sub-layer has a refractive index in the range of about
1 to about 2.
[0014] Optionally, M1 is selected from the group consisting of
aluminum, chromium, copper, molybdenum, titanium, an
aluminum/neodymium alloy, a copper/molybdenum alloy, a
molybdenum/tantalum alloy, a molybdenum/niobium alloy;
M2O.sub.aN.sub.b is selected from the group consisting of
AlO.sub.xN.sub.y, CrO.sub.xN.sub.y, CuO.sub.xN.sub.y,
MoO.sub.xN.sub.y, TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w; and M3O.sub.c is selected from the
group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x,
TiO.sub.x, Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z.
[0015] In another aspect, the present invention provides a method
of fabricating a conductive layer in a semiconductor apparatus
comprising a metal sub-layer and an anti-reflective coating for
reducing light reflection on the metal sub-layer, the method
comprising forming a metal sub-layer on a substrate using a
material comprising M1, wherein M1 is a single metal or a
combination of metals; forming a light absorption sub-layer over
the metal sub-layer for reducing light reflection by absorption
using a material comprising M2O.sub.aN.sub.b, wherein M2 is a
single metal or a combination of metals, a>0, and b.gtoreq.0;
forming a light destructive interference sub-layer on a side of the
light absorption sub-layer distal to the metal sub-layer for
reducing light reflection by destructive interference using a
material comprising M3O.sub.c, wherein M3 is a single metal or a
combination of metals, and c>0.
[0016] Optionally, the light absorption sub-layer has a refractive
index larger than that of the light destructive interference
sub-layer.
[0017] Optionally, the light destructive interference sub-layer has
an oxygen molar content higher than the light absorption
sub-layer.
[0018] Optionally, the light absorption sub-layer and the light
destructive interference sub-layer are formed in a single
sputtering process using a same sputtering target under different
sputtering atmospheres achieved by adjusting a flow rate of one or
more reaction gas.
[0019] Optionally, the single sputtering process comprises
sequentially sputtering a metal material in a first atmosphere
corresponding to formation of the light absorption sub-layer and a
second atmosphere corresponding to formation of the light
destructive interference sub-layer; the first atmosphere comprises
an oxygen-containing reactive gas or a combination of an
oxygen-containing reactive gas and a nitrogen-containing reactive
gas; the second atmosphere is free of the nitrogen-containing
reactive gas and has a higher oxygen content than the first
atmosphere.
[0020] Optionally, the metal sub-layer, the light absorption
sub-layer, and the light destructive interference sub-layer are
formed in a single sputtering process, the single sputtering
process further comprises sputtering the metal material in a third
atmosphere prior to sputtering the metal material in the first
atmosphere.
[0021] Optionally, the metal layer, the light absorption sub-layer
and the light destructive interference sub-layer have at least one
metal element in common.
[0022] Optionally, the light destructive interference sub-layer is
formed to have a thickness of substantially about (k*.lamda./4n),
wherein k is an odd positive integer, .lamda. is a wavelength of an
ambient light, and n is the refractive index of the light
destructive interference sub-layer.
[0023] Optionally, the method further comprises forming one or more
additional sub-layer on a side of the light destructive
interference sub-layer distal to the light absorption sub-layer,
wherein refractive indexes of the light destructive interference
sub-layer and the one or more additional sub-layer sequentially
decrease along a direction away from the light absorption
sub-layer.
[0024] Optionally, the one or more additional sub-layer is formed
using a material comprising a metal oxide; oxygen molar contents of
the light destructive interference sub-layer and the one or more
additional sub-layer sequentially increase along a direction away
from the light absorption sub-layer.
[0025] Optionally, the light destructive interference sub-layer and
the one or more additional sub-layer are formed in a single
sputtering process using a same sputtering target under different
sputtering atmospheres, oxygen contents of different sputtering
atmospheres sequentially increase in forming sub-layers along a
direction away from the light absorption sub-layer.
[0026] Optionally, the metal layer, the light absorption sub-layer,
and the light destructive interference sub-layer are formed in a
single sputtering process using a same sputtering target under
different sputtering atmospheres achieved by adjusting a flow rate
of one or more reaction gas.
[0027] Optionally, the light absorption sub-layer has a refractive
index in the range of about 3 to about 4; the light destructive
interference sub-layer has a refractive index in the range of about
1 to about 2.
[0028] Optionally, M1 is selected from the group consisting of
aluminum, chromium, copper, molybdenum, titanium, an
aluminum/neodymium alloy, a copper/molybdenum alloy, a
molybdenum/tantalum alloy, a molybdenum/niobium alloy;
M2O.sub.aN.sub.b is selected from the group consisting of
AlO.sub.xN.sub.y, CrO.sub.xN.sub.y, CuO.sub.xN.sub.y,
MoO.sub.xN.sub.y, TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w; and M3O.sub.c is selected from the
group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x,
TiO.sub.x, Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z.
[0029] In another aspect, the present invention provides a
substrate comprising a conductive layer described herein or
fabricated by a method described herein.
[0030] Optionally, the substrate is a display substrate, and the
conductive layer is one or a combination of a gate electrode, a
gate line, and a gate line lead wire.
[0031] Optionally, the substrate is a display substrate, and the
conductive layer is one or a combination of a source/drain
electrode, a data line connected to the source/drain electrode, and
a data line lead wire thereof.
[0032] Optionally, the substrate is a display substrate, and the
conductive layer is a common electrode line.
[0033] Optionally, the substrate is a display substrate, and the
conductive layer is a bridging electrode for connecting touch
sensing electrodes.
[0034] In another aspect, the present invention provides a display
apparatus comprising a substrate described herein.
BRIEF DESCRIPTION OF THE FIGURES
[0035] The following drawings are merely examples for illustrative
purposes according to various disclosed embodiments and are not
intended to limit the scope of the present invention.
[0036] FIG. 1 is a diagram illustrating the structure of a
conductive layer in a semiconductor apparatus in some
embodiments.
[0037] FIG. 2 is a diagram illustrating the structure of a
conductive layer in a semiconductor apparatus in some
embodiments.
[0038] FIG. 3 is a diagram illustrating the structure of a
conductive layer in a semiconductor apparatus in some
embodiments.
[0039] FIG. 4 is a graph showing a comparison between light
reflectance of a light absorption sub-layer and that of a light
destructive interference sub-layer.
[0040] FIG. 5 is a plan view of a display substrate having a
present conductive layer in some embodiments.
[0041] FIG. 6 is a cross-sectional view along the A-A' direction of
the display substrate in FIG. 5.
[0042] FIG. 7 is a cross-sectional view along the B-B' direction of
the display substrate in FIG. 5.
DETAILED DESCRIPTION
[0043] The disclosure will now describe more specifically with
reference to the following embodiments. It is to be noted that the
following descriptions of some embodiments are presented herein for
purpose of illustration and description only. It is not intended to
be exhaustive or to be limited to the precise form disclosed.
[0044] In manufacturing a display apparatus having a black matrix
on the package substrate, it is imperative to precisely align the
black matrix with the corresponding metal lines in the array
substrate. When the black matrix and the metal lines are
misaligned, light reflection form these metal line is not
completely blocked, adversely affecting display quality.
Accordingly, the black matrix array typically is designed to have a
larger area than its corresponding metal lines to ensure light
blockage. An increased black matrix area, however, results in a
lower aperture ratio of the display apparatus.
[0045] The present disclosure provides a novel conductive layer in
a semiconductor apparatus (such as a metal line or an electrode in
a display apparatus) that obviate the need for a black matrix in
the semiconductor apparatus. The novel conductive layer of the
present disclosure can be used in any semiconductor apparatus, such
as a display apparatus. Accordingly, the present disclosure also
provides, inter alia, a novel substrate and a novel display
apparatus having the conductive layer, and a novel fabricating
method for making the same.
[0046] In some embodiments, the conductive layer in a semiconductor
apparatus includes a metal sub-layer and an anti-reflective coating
over the metal sub-layer. The anti-reflective coating reduces light
reflection on the metal sub-layer, such as light reflection of an
ambient light or a backlight in the semiconductor apparatus.
Optionally, the conductive layer has two anti-reflective coatings,
each of which over one side of the metal sub-layer. When the
conductive layer includes two anti-reflective coatings on both
sides of the metal sub-layer, light reflection of both the ambient
light and the backlight may be effectively reduced by the
anti-reflective coatings. Optionally, the conductive layer has only
one anti-reflective coating over only one side of the metal
sub-layer, e.g., a side of the metal sub-layer facing an ambient
light or a side of the metal sub-layer facing the backlight. For
example, a first side of the conductive layer may be in contact
with or electrically connected with another conductive or
semi-conductor layer, and a second side is facing the ambient light
or the backlight. In that case, the anti-reflective layer is
required on only the second side. The anti-reflective coating
substantially eliminates or significantly reduces light reflection
on the surface of the metal sub-layer, a black matrix is not needed
in the semiconductor apparatus. Thus, in some embodiments, the
semiconductor apparatus has an increase aperture ratio due to the
absence of a black matrix.
[0047] In some embodiments, the anti-reflective coating includes a
light absorption sub-layer on the metal sub-layer for reducing
light reflection by absorption and a light destructive interference
sub-layer on a side of the light absorption sub-layer distal to the
metal sub-layer for reducing light reflection by destructive
interference. Optionally, the metal sub-layer, the light absorption
sub-layer, and the light destructive interference sub-layer form a
sandwich structure, e.g., the light absorption sub-layer abutting
the metal sub-layer and the light destructive interference
sub-layer abutting the light absorption sub-layer. Optionally, the
anti-reflective coating includes one or more additional sub-layers
between the metal sub-layer and the light absorption sub-layer,
e.g., additional light absorption sub-layers. Optionally, the
anti-reflective coating includes one or more additional sub-layers
between the light absorption sub-layer and the light destructive
interference sub-layer, e.g., additional light absorption
sub-layers or additional light destructive interference sub-layers.
Optionally, the anti-reflective coating includes one or more
additional sub-layers on a side of the light destructive
interference sub-layer, e.g., additional light destructive
interference sub-layers. Optionally, the light destructive
interference sub-layer is on a side of the light absorption
sub-layer facing an incident light (e.g., an ambient light or a
backlight).
[0048] Optionally, the light destructive interference sub-layer has
a thickness such that a light destructive interference occurs in
the light destructive interference sub-layer. i.e., a light
destructive interference occurs between light reflected by two
surfaces of the light destructive interference sub-layer.
Optionally, the light destructive interference sub-layer has a
thickness d of substantially about (k*.lamda./4n), wherein d is the
thickness of the light destructive interference sub-layer, k is an
odd positive integer, .lamda. is the light wavelength in vacuum,
and n is the refractive index of the light destructive interference
sub-layer. Optionally, .lamda. is a wavelength an ambient light,
e.g., an average wavelength or peak wavelength of an ambient light.
Optionally, .lamda. is a wavelength of a backlight, e.g., an
average wavelength or peak wavelength of a backlight. Optionally,
.lamda. is a wavelength of a white light, e.g., an average
wavelength or peak wavelength of a white light. Optionally, the
conductive layer has a first anti-reflective coating and a second
anti-reflective coating, each over one side of the metal sub-layer.
Optionally, the light destructive interference sub-layer in the
first anti-reflective coating has a thickness d of substantially
about (k*.lamda./4n), wherein .lamda. is a wavelength an ambient
light; and the light destructive interference sub-layer in the
second anti-reflective coating has a thickness d of substantially
about (k*.lamda./4n), wherein .lamda. is a wavelength a
backlight.
[0049] In some embodiments, the metal sub-layer is made of a
material including M1, wherein M1 is a single metal or a
combination of metals (e.g., as metal alloys or laminates). In some
embodiments, the light absorption sub-layer is made of a material
including M2O.sub.aN.sub.b, wherein M2 is a single metal or a
combination of metals (e.g., as metal alloys or laminates), N
stands for nitrogen element, O stands for oxygen element, a>0,
and b.gtoreq.0. In some embodiments, the light destructive
interference sub-layer is made of a material including M3O.sub.c,
wherein M3 is a single metal or a combination of metals (e.g., as
metal alloys or laminates). N stands for nitrogen element, O stands
for oxygen element, and c>0. Optionally, the light absorption
sub-layer has a refractive index larger than that of the light
destructive interference sub-layer. Optionally, the light
destructive interference sub-layer has an oxygen molar content
higher than the light absorption sub-layer. Optionally, b=0, i.e.,
the light absorption sub-layer is made of a material including
M2O.sub.a. Optionally, a<b. Optionally, M1 and M2 are the same,
and a<b.
[0050] M2 may be the same as or different from M1, or may have at
least one element in common with M1. M3 may be the same as or
different from M1 and M2, or may have at least one element in
common with M1 and/or M2. Optionally, M1, M2, and M3 are different
from each other. Optionally, the metal layer, the light absorption
sub-layer and the light destructive interference sub-layer have at
least one metal element in common, i.e., M1, M2, and M3 have at
least one metal element in common. Optionally, M1, M2, and M3 are
the same (e.g., a same single metal or a same combination of
metals), i.e., the metal sub-layer, the light absorption sub-layer
and the light destructive interference sub-layer contain a same set
of one or more metal elements.
[0051] In some embodiments, M1 is selected from the group
consisting of aluminum, chromium, copper, molybdenum, titanium, an
aluminum/neodymium alloy, a copper/molybdenum alloy, a
molybdenum/tantalum alloy, a molybdenum/niobium alloy. Optionally,
M2O.sub.aN.sub.b is selected from the group consisting of
AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x, TiO.sub.x,
Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z, AlO.sub.xN.sub.y,
CrO.sub.xN.sub.y, CuO.sub.xN.sub.y, MoO.sub.xN.sub.y,
TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w. Optionally, M2O.sub.aN.sub.b is
selected from the group consisting of AlO.sub.xN.sub.y,
CrO.sub.xN.sub.y, CuO.sub.xN.sub.y, MoO.sub.xN.sub.y,
TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w. Optionally, M3O.sub.c is selected
from the group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x,
MoO.sub.x, TiO.sub.x, Al.sub.xNd.sub.yO.sub.z,
Cu.sub.xMo.sub.yO.sub.z, Mo.sub.xTa.sub.yO.sub.z,
Mo.sub.xNb.sub.yO.sub.z. Optionally, M1 is selected from the group
consisting of aluminum, chromium, copper, molybdenum, titanium, an
aluminum/neodymium alloy, a copper/molybdenum alloy, a
molybdenum/tantalum alloy, a molybdenum/niobium alloy;
M2O.sub.aN.sub.b is selected from the group consisting of
AlO.sub.xN.sub.y, CrO.sub.xN.sub.y, CuO.sub.xN.sub.y,
MoO.sub.xN.sub.y, TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w; and M3O.sub.c is selected from the
group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x,
TiO.sub.x, Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z. Optionally, M1 is
selected from the group consisting of aluminum, chromium, copper,
molybdenum, titanium, an aluminum/neodymium alloy, a
copper/molybdenum alloy, a molybdenum/tantalum alloy, a
molybdenum/niobium alloy; M2O.sub.aN.sub.b is selected from the
group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x,
TiO.sub.x, Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z, AlO.sub.xN.sub.y,
CrO.sub.xN.sub.y, CuO.sub.xN.sub.y, MoO.sub.xN.sub.y,
TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w; and M3O.sub.c is selected from the
group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x,
TiO.sub.x, Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z. Optionally, M1,
M2, and M3 are the same.
[0052] In some embodiments, the anti-reflective coating further
includes one or more additional sub-layer on a side of the light
destructive interference sub-layer distal to the light absorption
sub-layer, refractive indexes of the light destructive interference
sub-layer and the one or more additional sub-layer sequentially
decrease along a direction away from the light absorption
sub-layer. Optionally, refractive indexes of the light absorption
sub-layer, the light destructive interference sub-layer, and the
one or more additional sub-layer sequentially decrease along a
direction away from the metal sub-layer.
[0053] In some embodiments, the one or more additional sub-layer is
made of a material comprising a metal oxide. Optionally, oxygen
molar contents of the light destructive interference sub-layer and
the one or more additional sub-layer sequentially increase along a
direction away from the light absorption sub-layer. Optionally,
oxygen molar contents of the light absorption sub-layer, the light
destructive interference sub-layer, and the one or more additional
sub-layer sequentially increase along a direction away from the
light absorption sub-layer. For example, the light absorption
sub-layer may have a refractive index in the range of about 3 to
about 4, and the light destructive interference sub-layer and the
one or more additional sub-layer may have a refractive index in the
range of about 1 to about 2.
[0054] In another aspect, the present disclosure provides a method
of fabricating a conductive layer in a semiconductor apparatus as
described herein, e.g., a conductive layer having a metal sub-layer
and an anti-reflective coating. In some embodiments, the method
includes forming an anti-reflective coating over the metal
sub-layer for reducing light reflection on the metal sub-layer. The
anti-reflective coating reduces light reflection on the metal
sub-layer, such as light reflection of an ambient light or a
backlight in the semiconductor apparatus. Optionally, the method
includes forming two anti-reflective coatings over the metal
sub-layer, each of which is formed over one side of the metal
sub-layer. When the conductive layer includes two anti-reflective
coatings one both sides of the metal sub-layer, light reflection of
both the ambient light and the backlight may be effectively reduced
by the anti-reflective coatings. Optionally, the method includes
forming only one anti-reflective coating over only one side of the
metal sub-layer, e.g., a side of the metal sub-layer facing an
ambient light or a side of the metal sub-layer facing the
backlight. The anti-reflective coating substantially eliminates or
significantly reduces light reflection on the surface of the metal
sub-layer, a black matrix is not needed in the semiconductor
apparatus. Thus, in some embodiments, the semiconductor apparatus
fabricated by the present method has an increase aperture ratio due
to the absence of a black matrix.
[0055] In some embodiments, the method includes forming a light
absorption sub-layer over the metal sub-layer, and forming a light
destructive interference sub-layer on a side of the light
absorption layer distal to the metal sub-layer. Optionally, the
method includes forming the light absorption sub-layer abutting the
metal sub-layer; and forming the light destructive interference
sub-layer abutting the light absorption sub-layer, i.e., the metal
sub-layer, the light absorption sub-layer, and the light
destructive interference sub-layer form a sandwich structure.
Optionally, the method includes forming one or more additional
sub-layers between the metal sub-layer and the light absorption
sub-layer, e.g., forming additional light absorption sub-layers
between the metal sub-layer and the light absorption sub-layer.
Optionally, the method includes forming one or more additional
sub-layers between the light absorption sub-layer and the light
destructive interference sub-layer, e.g., forming additional light
absorption sub-layers or additional light destructive interference
sub-layers between the light absorption sub-layer and the light
destructive interference sub-layer. Optionally, the method includes
forming one or more additional sub-layers on a side of the light
destructive interference sub-layer distal to the light absorption
sub-layer, e.g., forming additional light destructive interference
sub-layers on a side of the light destructive interference
sub-layer distal to the light absorption sub-layer. Optionally, the
light destructive interference sub-layer is formed on a side of the
light absorption sub-layer facing an incident light (e.g., an
ambient light or a backlight).
[0056] Optionally, the method includes forming the light
destructive interference sub-layer in such a thickness that a light
destructive interference occurs in the light destructive
interference sub-layer, i.e., a light destructive interference
occurs between light reflected by two surfaces of the light
destructive interference sub-layer. Optionally, the method includes
forming the light destructive interference sub-layer having a
thickness d of substantially about (k*.lamda./4n), wherein d is the
thickness of the light destructive interference sub-layer, k is an
odd positive integer, .lamda. is the light wavelength in vacuum,
and n is the refractive index of the light destructive interference
sub-layer. Optionally, .lamda. is a wavelength an ambient light,
e.g., an average wavelength or peak wavelength of an ambient light.
Optionally, .lamda. is a wavelength of a backlight, e.g., an
average wavelength or peak wavelength of a backlight. Optionally,
.lamda. is a wavelength of a white light, e.g., an average
wavelength or peak wavelength of a white light. Optionally, the
conductive layer has a first anti-reflective coating and a second
anti-reflective coating, each over one side of the metal sub-layer.
Optionally, the light destructive interference sub-layer in the
first anti-reflective coating has a thickness d of substantially
about (k*.lamda./4n), wherein .lamda. is a wavelength an ambient
light; and the light destructive interference sub-layer in the
second anti-reflective coating has a thickness d of substantially
about (k*.lamda./4n), wherein .lamda. is a wavelength a
backlight.
[0057] In some embodiments, the method includes forming a metal
sub-layer on a substrate using a material comprising M1, wherein M1
is a metal or a combination of metals (e.g., as metal alloys or
laminates). In some embodiments, the method includes forming a
light absorption sub-layer over the metal sub-layer for reducing
light reflection by absorption using a material comprising
M2O.sub.aN.sub.b, wherein M2 is a metal or a combination of metals
(e.g., as metal alloys or laminates), N stands for nitrogen
element, O stands for oxygen element, a>0, and b.gtoreq.0. In
some embodiments, the method includes forming a light destructive
interference sub-layer on a side of the light absorption sub-layer
distal to the metal sub-layer for reducing light reflection by
destructive interference using a material comprising M3O.sub.c,
wherein M3 is a metal or a combination of metals (e.g., as metal
alloys or laminates), N stands for nitrogen element, O stands for
oxygen element, and c>0. Optionally, the light absorption
sub-layer has a refractive index larger than that of the light
destructive interference sub-layer. Optionally, the light
destructive interference sub-layer has a higher oxygen molar
content than the light absorption sub-layer. Optionally, b=0, i.e.,
the light absorption sub-layer is made of a material including
M2O.sub.a. Optionally, a<b. Optionally, M1 and M2 are the same,
and a<b.
[0058] M2 may be the same as or different from M1, or may have at
least one element in common with M1. M3 may be the same as or
different from M1 and M2, or may have at least one element in
common with M1 and/or M2. Optionally, M1, M2, and M3 are different
from each other. Optionally, the metal layer, the light absorption
sub-layer and the light destructive interference sub-layer have at
least one metal element in common, i.e., M1, M2, and M3 have at
least one metal element in common. Optionally, M1, M2, and M3 are
the same (e.g., a same single metal or a same combination of
metals), i.e., the metal sub-layer, the light absorption sub-layer
and the light destructive interference sub-layer contain a same set
of one or more metal elements.
[0059] In some embodiments, M1 is selected from the group
consisting of aluminum, chromium, copper, molybdenum, titanium, an
aluminum/neodymium alloy, a copper/molybdenum alloy, a
molybdenum/tantalum alloy, a molybdenum/niobium alloy. Optionally.
M2O.sub.aN.sub.b is selected from the group consisting of
AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x, TiO.sub.x,
Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z, AlO.sub.xN.sub.y,
CrO.sub.xN.sub.y, CuO.sub.xN.sub.y, MoO.sub.xN.sub.y,
TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w. Optionally. M2O.sub.aN.sub.b is
selected from the group consisting of AlO.sub.xN.sub.y,
CrO.sub.xN.sub.y, CuO.sub.xN.sub.y, MoO.sub.xN.sub.y,
TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w, Optionally, M3O.sub.c is selected
from the group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x,
MoO.sub.x, TiO.sub.x, Al.sub.xNd.sub.yO.sub.z,
Cu.sub.xMo.sub.yO.sub.z, Mo.sub.xTa.sub.yO.sub.z,
Mo.sub.xNb.sub.yO.sub.z. Optionally, M1 is selected from the group
consisting of aluminum, chromium, copper, molybdenum, titanium, an
aluminum/neodymium alloy, a copper/molybdenum alloy, a
molybdenum/tantalum alloy, a molybdenum/niobium alloy;
M2O.sub.aN.sub.b is selected from the group consisting of
AlO.sub.xN.sub.y, CrO.sub.xN.sub.y, CuO.sub.xN.sub.y,
MoO.sub.xN.sub.y, TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w; and M3O.sub.c is selected from the
group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x,
TiO.sub.x, Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z. Optionally, M1 is
selected from the group consisting of aluminum, chromium, copper,
molybdenum, titanium, an aluminum/neodymium alloy, a
copper/molybdenum alloy, a molybdenum/tantalum alloy, a
molybdenum/niobium alloy; M2O.sub.aN.sub.b is selected from the
group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x,
TiO.sub.x, Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z, AlO.sub.xN.sub.y,
CrO.sub.xN.sub.y, CuO.sub.xN.sub.y, MoO.sub.xN.sub.y,
TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w, and M3O.sub.c is selected from the
group consisting of AlO.sub.x, CrO.sub.x, CuO.sub.x, MoO.sub.x,
TiO.sub.x, Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z. Optionally, M1,
M2, and M3 are the same.
[0060] In some embodiments, the light absorption sub-layer and the
light destructive interference sub-layer are formed in a single
sputtering process using a same sputtering target under different
sputtering atmospheres achieved by adjusting a flow rate of one or
more reaction gas (e.g., an oxygen-containing reactive gas and/or a
nitrogen-containing reactive gas). For example, the single
sputtering process may include sequentially sputtering a metal
material in a first atmosphere corresponding to formation of the
light absorption sub-layer and a second atmosphere corresponding to
formation of the light destructive interference sub-layer.
Optionally, the first atmosphere includes an oxygen-containing
reactive gas (e.g., O.sub.2) or a combination of an
oxygen-containing reactive gas (e.g., O.sub.2) and a
nitrogen-containing reactive gas (e.g. N.sub.2, NO, N.sub.2O,
NO.sub.2). Optionally, the second atmosphere is free of the
nitrogen-containing reactive gas and has a higher oxygen molar
content than the first atmosphere.
[0061] Optionally, the metal sub-layer, the light absorption
sub-layer, and the light destructive interference sub-layer are
formed in a single sputtering process using a same sputtering
target under different sputtering atmospheres achieved by adjusting
a flow rate of one or more reaction gas (e.g., an oxygen-containing
reactive gas and/or a nitrogen-containing reactive gas). For
example, the single sputtering process may include sequentially
sputtering the metal material in a third atmosphere corresponding
to formation of the metal sub-layer, sputtering the metal material
in a first atmosphere corresponding to formation of the light
absorption sub-layer, and sputtering the metal material in a second
atmosphere corresponding to formation of the light destructive
interference sub-layer.
[0062] In some embodiments, the method further includes forming one
or more additional sub-layer on a side of the light destructive
interference sub-layer distal to the light absorption sub-layer.
Optionally, refractive indexes of the light destructive
interference sub-layer and the one or more additional sub-layer
sequentially decrease along a direction away from the light
absorption sub-layer. Optionally, refractive indexes of the light
absorption sub-layer, the light destructive interference sub-layer,
and the one or more additional sub-layer sequentially decrease
along a direction away from the metal sub-layer.
[0063] In some embodiments, the method further includes forming the
one or more additional sub-layer using a material comprising a
metal oxide in a single sputtering process. Optionally, oxygen
molar contents of the light destructive interference sub-layer and
the one or more additional sub-layer sequentially increase along a
direction away from the light absorption sub-layer. Optionally,
oxygen molar contents of the light absorption sub-layer, the light
destructive interference sub-layer, and the one or more additional
sub-layer sequentially increase along a direction away from the
light absorption sub-layer. For example, the light absorption
sub-layer may have a refractive index in the range of about 3 to
about 4, and the light destructive interference sub-layer and the
one or more additional sub-layer may have a refractive index in the
range of about 1 to about 2.
[0064] In some embodiments, the method further includes forming the
light destructive interference sub-layer and the one or more
additional sub-layer in a single sputtering process using a same
sputtering target under different sputtering atmospheres.
Optionally, oxygen molar contents of different sputtering
atmospheres sequentially increase in forming sub-layers along a
direction away from the light absorption sub-layer.
[0065] In some embodiments, the method further includes forming the
metal layer, the light absorption sub-layer, and the light
destructive interference sub-layer in a single sputtering process
using a same sputtering target under different sputtering
atmospheres achieved by adjusting a flow rate of one or more
reaction gas (e.g., an oxygen-containing reactive gas and/or a
nitrogen-containing reactive gas).
[0066] FIGS. 1-3 are diagrams illustrating the structure of a
conductive layer in a semiconductor apparatus in some embodiments.
Referring to FIGS. 1-3, the conductive layer 10 in the embodiments
includes a metal sub-layer 11 on a base substrate 20, a light
absorption sub-layer 12 on a side of the metal sub-layer 11 distal
to the base substrate 20, and a light destructive interference
sub-layer 13 on a side of the light absorption sub-layer 12 distal
to the metal sub-layer 11. Optionally, the light absorption
sub-layer 12 is a light absorption layer, the light destructive
interference sub-layer 13 is a light reflection reducing layer.
Optionally, the light absorption sub-layer has a refractive index
larger than that of the light destructive interference sub-layer.
The light destructive interference sub-layer 13 has a first surface
13a and a second surface opposite to the first surface, the second
surface proximal to the light absorption sub-layer 12, the first
surface 13a proximal to an incident light (e.g., an ambient light
or a backlight) and distal to the light absorption sub-layer
12.
[0067] Any appropriate material may be used for making the metal
sub-layer 11. For instance, the metal sub-layer 11 may be made of a
metal material. The metal material may be a single metal material
or a combination of metals (e.g., as metal alloys or laminates),
examples of which include, but are not limited to, aluminum,
chromium, copper, molybdenum, titanium, an aluminum/neodymium
alloy, a copper/molybdenum alloy, a molybdenum/tantalum alloy, a
molybdenum/niobium alloy, etc. The metal sub-layer 11 may be made
of any appropriate dimension, for example, to ensure a high
electrical conductivity when the conductive layer is an electrode
layer. In some conductive layers, the metal sub-layer 11 has a
thickness in the range of about 1000 .ANG. to about 6000 .ANG..
[0068] In some embodiments, the light destructive interference
sub-layer 13 is a transparent sub-layer having a smaller refractive
index on the surface of the conductive layer 10. For example, the
light absorption sub-layer 13 has a refractive index that is
smaller than that of the light destructive interference sub-layer
12. For example, in some conductive layers, the light absorption
sub-layer 12 may have a refractive index in the range of about 3 to
about 4, whereas the light destructive interference sub-layer 13
may have a refractive index in the range of about 1 to about 2. In
some instances, the conductive layer 10 may be designed such that a
destructive interference occurs between light reflected by the
first surface 13a (light incident surface) of the light destructive
interference sub-layer 13 and light reflected by the second surface
of the light destructive interference sub-layer 13. As a result of
the destructive interference, reflection of light (e.g., an ambient
light or a backlight) on the surface of the metal sub-layer 11 can
be eliminated or significantly reduced, obviating the need for a
black matrix in the semiconductor apparatus.
[0069] Specifically, the conductive layer 10 may be designed
according to the follow equation to achieve the destructive
interference discussed above:
d=k*.lamda./4n (1)
[0070] wherein d is the thickness of the light destructive
interference sub-layer 13, k is an odd positive integer, .lamda. is
the light wavelength in vacuum, and n is the refractive index of
the light destructive interference sub-layer 13.
[0071] Accompanying a decrease in light reflection from the light
destructive interference sub-layer 13, light transmission through
the light destructive interference sub-layer 13 increases
correspondingly. Accordingly, the conductive layer 10 further
includes a light absorption sub-layer 12 underneath the light
destructive interference sub-layer 13 to absorb the light
transmitted through the light destructive interference sub-layer
13. Optionally, the light absorption sub-layer 12 includes a black
material for enhancing light absorption, preventing light
reflection on the surface of the metal sub-layer 11. Combining the
destructive interference of light in the light destructive
interference sub-layer 13 and the enhanced light absorption in the
light absorption sub-layer 12, reflection of light (e.g., an
ambient light or a backlight) on the surface of the metal sub-layer
11 can be eliminated or significantly reduced, obviating the need
for a black matrix in the semiconductor apparatus.
[0072] Optionally, the conductive layer 10 is on a base substrate
20. Optionally, the semiconductor apparatus includes one or more
layers between the conductive layer 10 and the base substrate
20.
[0073] Numerous embodiments may be practiced for making the present
conductive layer 10. In some embodiments, the conductive layer 10
is a layer having a light destructive interference sub-layer 13,
the first surface of which is proximal to an incident light. The
incident light may be an ambient light, or a backlight, or both.
For example, the conductive layer 10 may be a conductive layer 10
in a display apparatus, the incident light may be an ambient light
on the image display side of the display apparatus. As shown in
FIG. 1, the conductive layer 10 includes a metal sub-layer 11, a
light absorption sub-layer 12, and a light destructive interference
sub-layer 13 sequentially on a base substrate 20. The light
destructive interference sub-layer 13 includes a first surface 13a
distal to the light absorption sub-layer 12 and a second surface
proximal to the light absorption sub-layer 12. The first surface
13a is proximal to an ambient light, i.e., the ambient light shines
on the first surface 13a. In part due to the destructive
interference of light occurred in the light destructive
interference sub-layer 13, reflection of the ambient light on the
surface of the metal sub-layer 11 can be eliminated or
significantly reduced, resulting in improved contrast and higher
display quality.
[0074] In another example, the conductive layer 10 is a conductive
layer 10 in a liquid crystal display apparatus. In a liquid crystal
display apparatus, the liquid crystal layer is illuminated with a
backlight in a backlight module. The majority of light provided by
the backlight is polarized by a polarizer and the polarized light
rotated by the liquid crystal layer. Part of the backlight is not
rotated by the liquid crystal layer and may be reflected by a metal
layer inside the display apparatus, interfering normal image
display. As shown in FIG. 2, the conductive layer 10 includes a
metal sub-layer 11, a light absorption sub-layer 12, and a light
destructive interference sub-layer 13 sequentially on a base
substrate 20. The light destructive interference sub-layer 13
includes a first surface 13a distal to the light absorption
sub-layer 12 and a second surface proximal to the light absorption
sub-layer 12. The first surface 13a is proximal to the backlight.
That is, the backlight shines on the first surface 13a. In part due
to the destructive interference of light occurred in the light
destructive interference sub-layer 13, reflection of the backlight
on the surface of the metal sub-layer can be eliminated or
significantly reduced, avoiding interference on normal image
display and resulting in higher display quality.
[0075] In another example, the conductive layer 10 includes a metal
sub-layer 11 having light absorption sub-layers 12 and light
destructive interference sub-layers 13 on both sides of the metal
sub-layer 11. As shown in FIG. 3, on a first side (the upper side)
of the metal sub-layer 11, the conductive layer 10 includes a light
absorption sub-layer 12 and a light destructive interference
sub-layer 13 sequentially on the metal sub-layer 11. The light
destructive interference sub-layer 13 includes a first surface 13a
distal to the light absorption sub-layer 12 and a second surface
proximal to the light absorption sub-layer 12. The first surface
13a is proximal to an ambient light, i.e., the ambient light shines
on the first surface 13a. In part due to the destructive
interference of light occurred in the light destructive
interference sub-layer 13, reflection of the ambient light on the
surface of the metal sub-layer 11 can be eliminated or
significantly reduced, resulting in improved contrast and higher
display quality. As shown in FIG. 3, on a second side (the lower
side) of the metal sub-layer 11, the conductive layer 10 also
includes a light absorption sub-layer 12 and a light destructive
interference sub-layer 13 sequentially on the metal sub-layer 11.
The light destructive interference sub-layer 13 includes a first
surface 13a distal to the light absorption sub-layer 12 and a
second surface proximal to the light absorption sub-layer 12. The
first surface 13a is proximal to the backlight. i.e., the backlight
shines on the first surface 13a. In part due to the destructive
interference of light occurred in the light destructive
interference sub-layer 13, reflection of the backlight on the
surface of the metal sub-layer 11 can be eliminated or
significantly reduced, avoiding interference on normal image
display and resulting in higher display quality.
[0076] Based on the above, the present conductive layer 10 has
several advantages over the conventional conductive layer. First,
the metal sub-layer 11 maintains high electrical conductivity to
function as a conductive means in the semiconductor apparatus
(e.g., as an electrode). Second, the light absorption sub-layer 12
absorbs light (e.g., the ambient light or the backlight),
functioning as a light blockage means similar to a black matrix.
Third, the light absorption layer 13 reduces light reflection on
the metal sub-layer 11, enhancing display contrast. Combining the
destructive interference of light in the light destructive
interference sub-layer 13 and the enhanced light absorption in the
light absorption sub-layer 12, reflection of light (e.g., an
ambient light or a backlight) on the surface of the metal sub-layer
11 (e.g., electrodes, metal lines, and wires) can be eliminated or
significantly reduced, obviating the need for a black matrix in the
semiconductor apparatus. The present conductive layer 10 overcomes
several disadvantages of the conventional conductive layer, such as
the complicated fabricating process, the misaligned black matrix
issues, and the reduced aperture ratio.
[0077] In some embodiments, the light absorption sub-layer 12 is
made of a material having a metal oxynitride and/or a metal oxide.
A higher oxygen molar content in a metal oxynitride or a metal
oxide compound results in a lower refractive index. Accordingly,
the light destructive interference sub-layer 13 has an oxygen molar
content higher than the light absorption sub-layer 12, and the
light absorption sub-layer 12 has a refractive index larger than
that of the light destructive interference sub-layer 13.
[0078] In some embodiments, the metal element in the metal
oxynitride or the metal oxide is, for example, aluminum, chromium,
copper, molybdenum, titanium, an aluminum/neodymium alloy, a
copper/molybdenum alloy, a molybdenum/tantalum alloy, a
molybdenum/niobium alloy, etc. A higher oxygen molar content in the
metal oxynitride or the metal oxide results in a relatively more
transparent material, whereas a lower oxygen molar content can
convert the compound from a transparent material into a black
material. Thus, the light destructive interference sub-layer 13 has
an oxygen molar content higher than the light absorption sub-layer
12, the light absorption sub-layer 12 is substantially black, and
the light destructive interference sub-layer 13 is substantially
transparent.
[0079] Examples of metal oxides include, but are not limited to,
AlO.sub.x, CrO.sub.x, CuO.sub.x. MoO.sub.x, TiO.sub.x,
Al.sub.xNd.sub.yO.sub.z, Cu.sub.xMo.sub.yO.sub.z,
Mo.sub.xTa.sub.yO.sub.z, Mo.sub.xNb.sub.yO.sub.z, etc. Examples of
metal oxynitrides include, but are not limited to,
AlO.sub.xN.sub.y, CrO.sub.xN.sub.y, CuO.sub.xN.sub.y,
MoO.sub.xN.sub.y, TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w, etc.
[0080] Optionally, the light destructive interference sub-layer 13
has a thickness in the range of about 300 .ANG. to about 1000
.ANG.. Optionally, the light absorption sub-layer 11 has a
thickness in the range of about 300 .ANG. to about 1000 .ANG..
[0081] Optionally, the light destructive interference sub-layer 13
has a multi-layer structure having two or more metal oxide
sub-layers having different refractive indexes. Refractive indexes
of the two or more light destructive interference sub-layers
sequentially decrease along a direction away from the light
absorption sub-layer 12.
[0082] Optionally, oxygen molar contents of two or more light
destructive interference sub-layers sequentially increase along a
direction away from the light absorption sub-layer.
[0083] Optionally, the light absorption sub-layer 12 and the light
destructive interference sub-layer 13 have at least one metal
element in common (e.g., all metal elements in both sub-layers are
the same). Optionally, the light absorption sub-layer 12 and the
light destructive interference sub-layer 13 are formed in a single
process (e.g., a single sputtering process).
[0084] Optionally, the metal layer 11, the light absorption
sub-layer 12 and the light destructive interference sub-layer 13
have at least one metal element in common (e.g., all metal elements
in all three sub-layers are the same). Optionally, the metal layer
11, the light absorption sub-layer 12 and the light destructive
interference sub-layer 13 are formed in a single process (e.g., a
single sputtering process). For example, the metal sub-layer 11 may
be formed using a metal (e.g., a single metal or a combination of
metals, e.g., as metal alloys or laminates) as the sputtering
target. After the metal sub-layer 11 is formed, the light
absorption sub-layer 12 and the light destructive interference
sub-layer 13 may be formed using the same sputtering target (e.g.,
the same metal or the same combination of metals) but under
different sputtering atmospheres from that for sputtering the metal
sub-layer 11 and from each other. For instance, the different
sputtering atmospheres may be achieved by including and/or
adjusting the flow rate of an oxygen-containing reactive gas (e.g.,
O.sub.2) and/or a nitrogen-containing reactive gas (e.g., N.sub.2),
thereby increasing the oxygen content and/or the nitrogen content
of the sputtering atmosphere. By forming the metal sub-layer 11,
the light absorption sub-layer 12, and/or the light destructive
interference sub-layer 13 in a single sputtering process, the
manufacturing costs can be significantly lowered, and manufacturing
efficiency enhanced.
[0085] In another aspect, the present disclosure also provides a
method of fabricating a conductive layer 10 in a semiconductor
apparatus. In some embodiments, the method includes forming a metal
sub-layer 11 on a substrate 20, and sequentially forming a light
absorption sub-layer 12 and a light destructive interference
sub-layer 13 on at least on side of the metal sub-layer 11. The
light absorption sub-layer 12 has a refractive index larger than
that of the light destructive interference sub-layer 13. The metal
sub-layer 11 is made of a metal (e.g., a single metal or a
combination of metals. e.g., as metal alloys or laminates). The
light absorption sub-layer 12 is formed using a material including
a metal oxynitride and/or a metal oxide. The light destructive
interference sub-layer 13 is formed using a material including a
metal oxide. A higher oxygen molar content in a metal oxynitride or
a metal oxide compound results in a lower refractive index.
Accordingly, the light destructive interference sub-layer 13 has an
oxygen molar content higher than the light absorption sub-layer 12,
and the light absorption sub-layer 12 has a refractive index larger
than that of the light destructive interference sub-layer 13.
[0086] In some embodiments, the light absorption sub-layer 12 and
the light destructive interference sub-layer 13 are formed in a
single sputtering process by including and/or adjusting the flow
rate of an oxygen-containing reactive gas (e.g., O.sub.2) and/or a
nitrogen-containing reactive gas (e.g., N.sub.2), thereby adjusting
the oxygen content and/or the nitrogen content of the sputtering
atmosphere.
[0087] In some embodiments, the method includes forming a light
absorption sub-layer 12 by sputtering a metal/alloy sputtering
target under an oxygen-containing sputtering atmosphere. Examples
of sputtering target materials include, but are not limited to,
aluminum, chromium, copper, molybdenum, titanium, an
aluminum/neodymium alloy, a copper/molybdenum alloy, a
molybdenum/tantalum alloy, a molybdenum/niobium alloy, etc.
Accordingly, examples of metal oxides in the light absorption
sub-layer 12 include, but are not limited to, AlO.sub.x, CrO.sub.x,
CuO.sub.x, MoO.sub.x, TiO.sub.x, Al.sub.xNd.sub.yO.sub.z,
Cu.sub.xMo.sub.yO.sub.z, Mo.sub.xTa.sub.yO.sub.z,
Mo.sub.zNb.sub.yO.sub.z, etc. Optionally, the method further
includes forming a light destructive interference sub-layer 13 by
sputtering a metal/alloy sputtering target under an
oxygen-containing sputtering atmosphere having an increased oxygen
content (e.g., by increasing the oxygen flow rate) as compared to
that for the light absorption sub-layer 12.
[0088] In some embodiments, the method includes forming a light
absorption sub-layer 12 by sputtering a metal/alloy sputtering
target under a first sputtering atmosphere containing an
oxygen-containing reactive gas and a nitrogen-containing reactive
gas (e.g., O.sub.2 and N.sub.2). Examples of sputtering target
materials include, but are not limited to, aluminum, chromium,
copper, molybdenum, titanium, an aluminum/neodymium alloy, a
copper/molybdenum alloy, a molybdenum/tantalum alloy, a
molybdenum/niobium alloy, etc. Accordingly, examples of metal
oxides in the light absorption sub-layer 12 include, but are not
limited to, AlO.sub.xN.sub.y, CrO.sub.xN.sub.y, CuO.sub.xN.sub.y,
MoO.sub.xN.sub.y, TiO.sub.xN.sub.y, Al.sub.xNd.sub.yO.sub.zN.sub.w,
Cu.sub.xMo.sub.yO.sub.zN.sub.w, Mo.sub.xTa.sub.yO.sub.zN.sub.w,
Mo.sub.xNb.sub.yO.sub.zN.sub.w, etc. Optionally, the method further
includes forming a light destructive interference sub-layer 13 by
sputtering a metal/alloy sputtering target under a second
sputtering atmosphere. The second sputtering atmosphere is
nitrogen-free and has an increased oxygen content as compared to
that for the light absorption sub-layer 12. The second sputtering
atmosphere may be conveniently achieved by adjusting the flow rate
of nitrogen-containing reactive gas (e.g., N.sub.2) and/or
oxygen-containing reactive gas (e.g., O.sub.2) in the first
sputtering atmosphere. For example, the second sputtering
atmosphere may be achieved by discontinuing the nitrogen-containing
reactive gas flow and increasing oxygen-containing reactive gas
flow in the first sputtering atmosphere. Optionally, the
oxygen-containing reactive gas (e.g., O.sub.2) flow rate for the
first sputtering atmosphere is less than about 10 sccm, and the
nitrogen-containing reactive gas (e.g., N.sub.2) flow rate for the
first sputtering atmosphere is less than about 30 sccm. Optionally,
the oxygen-containing reactive gas (e.g., O.sub.2) flow rate for
the second sputtering atmosphere is less than about 30 sccm, and
the nitrogen-containing reactive gas (e.g., N.sub.2) flow for the
second sputtering atmosphere is discontinued.
[0089] Optionally, when the light absorption sub-layer 12 and the
light destructive interference sub-layer 13 are formed in a single
sputtering process, they are formed in a same reaction chamber and
using a same sputtering target. As discussed above, different
sub-layers are formed by adjusting the contents of the sputtering
atmosphere.
[0090] When the light absorption sub-layer 12 and the light
destructive interference sub-layer 13 are formed using a same
sputtering target, the metal element(s) of these two sub-layers are
substantially the same. Optionally, the metal sub-layer 11 is
formed using a same metal element(s). Optionally, the metal
sub-layer 11 is formed using a material having one or more metal
element(s) different from that of the light absorption sub-layer 12
and the light destructive interference sub-layer 13. For example,
the metal sub-layer 11 may be made of molybdenum, the light
absorption sub-layer 12 may be made of MoO.sub.xN.sub.y, and the
light destructive interference sub-layer may be made of MoO.sub.x.
In another example, the metal sub-layer 11 is made of a
molybdenum/niobium alloy, the light absorption sub-layer 12 may be
made of Mo.sub.xNb.sub.yO.sub.zN.sub.w, and the light destructive
interference sub-layer may be made of Mo.sub.xNb.sub.yO.sub.z. In
another example, the metal sub-layer 11 is made of aluminum, the
light absorption sub-layer 12 may be made of MoO.sub.xN.sub.y, and
the light destructive interference sub-layer may be made of
MoO.sub.x.
[0091] Optionally, the step of forming the light destructive
interference sub-layer 13 includes forming a multi-layer structure
having two or more metal oxide sub-layers having different
refractive indexes. Refractive indexes of the two or more light
destructive interference sub-layers sequentially decrease along a
direction away from the light absorption sub-layer 12.
[0092] Optionally, oxygen molar contents of two or more light
destructive interference sub-layers sequentially increase along a
direction away from the light absorption sub-layer. As a
consequence of the increasing oxygen molar contents, refractive
indexes of the two or more light destructive interference
sub-layers sequentially decrease along a direction away from the
light absorption sub-layer 12.
[0093] Optionally, the two or more light destructive interference
sub-layers are formed by sputtering a metal/alloy sputtering target
sequentially under different oxygen-containing sputtering
atmospheres. The oxygen contents of sputtering atmospheres
corresponding to the two or more light destructive interference
sub-layers along a direction away from the light absorption
sub-layer 12 sequentially increase sequentially, thereby forming
two or more light destructive interference sub-layers having
refractive indexes sequentially decreasing along a direction away
from the light absorption sub-layer 12.
[0094] Optionally, the light absorption sub-layer 12 and the light
destructive interference sub-layer 13 have at least one metal
element in common. Optionally, the light absorption sub-layer 12
and the light destructive interference sub-layer 13 are formed in a
single process (e.g., a single sputtering process).
[0095] In some embodiments, the metal sub-layer 11, the light
absorption sub-layer 12, and the light destructive interference
sub-layer 13 are formed in a single sputtering process, further
lowering the manufacturing costs and enhancing the manufacturing
efficiency. In some embodiments, the method includes forming a
metal sub-layer 11 by sputtering a metal/alloy sputtering target
under an argon-containing sputtering atmosphere.
[0096] Optionally, the conductive layer is formed on a base
substrate. Optionally, the temperature of the base substrate during
the sputtering process can be, e.g., about 120.degree. C. The
sputtering power may be, e.g., about 12 kW. The argon pressure may
be, e.g., about 0.3 Pa. The argon flow rate may be, e.g., about 100
sccm.
[0097] Examples of sputtering target materials include, but are not
limited to, a single metal (e.g., aluminum, chromium, copper,
molybdenum, titanium, etc.) or a combination of metals (e.g., an
aluminum/neodymium alloy, a copper/molybdenum alloy, a
molybdenum/tantalum alloy, a molybdenum/niobium alloy, etc.). When
the sputtering target is of a single metal, the metal sub-layer 11
include the same single metal. When the sputtering target is of an
alloy, the metal sub-layer 11 include the same alloy.
[0098] Optionally, the metal sub-layer 11 has a thickness in the
range of about 1000 .ANG. to about 6000 .ANG..
[0099] Optionally, the method further includes forming the light
absorption sub-layer 12 by sputtering the same sputtering target
and in the same sputtering chamber for forming the metal sub-layer
11 under a different sputtering atmosphere, e.g., a sputtering
atmosphere containing an oxygen-containing reactive gas (e.g.,
O.sub.2) and/or a nitrogen-containing reactive gas (e.g., N.sub.2,
NO, N.sub.2O, NO.sub.2). The sputtering atmosphere may be
conveniently formed by modifying the sputtering atmosphere for the
metal sub-layer 11, e.g., by flowing oxygen- and
nitrogen-containing reactive gases into the sputtering chamber.
[0100] Optionally, the conductive layer is formed on a base
substrate. Optionally, the temperature of the base substrate during
the sputtering process can be, e.g., about 120.degree. C. The
sputtering power may be, e.g., about 12 kW. The argon pressure may
be, e.g., about 0.3 Pa. The argon flow rate may be, e.g., about 100
sccm. Optionally, the O.sub.2 flow rate for the first sputtering
atmosphere is less than about 10 sccm, and the NO flow rate for the
first sputtering atmosphere is less than about 30 sccm.
[0101] The light absorption sub-layer 12 includes a metal
oxynitride containing the same metal (e.g., a single metal or a
combination of metals. e.g., as metal alloys or laminates) element
for the metal sub-layer 11 and the sputtering target.
[0102] Optionally, the method further includes forming a light
destructive interference sub-layer 13 by sputtering a metal/alloy
sputtering target under a second sputtering atmosphere. The second
sputtering atmosphere is nitrogen-free and has an increased oxygen
content as compared to that for the light absorption sub-layer 12.
The second sputtering atmosphere may be conveniently achieved by
adjusting the flow rate of nitrogen-containing reactive gas (e.g.,
N.sub.2) and/or oxygen-containing reactive gas (e.g., O.sub.2) in
the first sputtering atmosphere. For example, the second sputtering
atmosphere may be achieved by discontinuing the nitrogen-containing
reactive gas flow and increasing oxygen-containing reactive gas
flow in the first sputtering atmosphere.
[0103] Optionally, the oxygen-containing reactive gas (e.g.,
O.sub.2) flow rate for the second sputtering atmosphere is
increased from less than about 10 sccm to less than about 30 sccm.
An increase oxygen content in the sputtering atmosphere ensures the
reaction between the sputtering target and the oxygen to form the
light destructive interference sub-layer 13.
[0104] Optionally, the light destructive interference sub-layer 13
includes a multi-layer structure having two or more metal oxide
sub-layers having different refractive indexes. Refractive indexes
of the two or more light destructive interference sub-layers
sequentially decrease along a direction away from the light
absorption sub-layer 12. Oxygen molar contents of two or more light
destructive interference sub-layers sequentially increase along a
direction away from the light absorption sub-layer 12. Optionally,
the two or more light destructive interference sub-layers are
formed by sputtering a metal/alloy sputtering target sequentially
under different oxygen-containing sputtering atmospheres. The
oxygen contents of sputtering atmospheres corresponding to the two
or more light destructive interference sub-layers along a direction
away from the light absorption sub-layer 12 sequentially increase
sequentially, thereby forming two or more light destructive
interference sub-layers having refractive indexes sequentially
decreasing along a direction away from the light absorption
sub-layer 12.
[0105] Based on the above, the metal sub-layer 11, the light
absorption sub-layer 12, and the light destructive interference
sub-layer 13 may be formed in a single sputtering process by
sequentially changing the sputtering atmosphere in the reaction
chamber, greatly improving the manufacturing efficiency.
[0106] In another aspect, the present disclosure further provides a
substrate including a conductive pattern having the conductive
layer 10 described herein. The conductive portion in the conductive
pattern is the metal sub-layer 11 in the conductive layer 10.
[0107] In some embodiments, the substrate is a display substrate
such as an array substrate, a color filter on array substrate, a
color filter substrate, and a touch control substrate.
[0108] Optionally, the array substrate includes an active layer
made of an oxide (e.g., an oxide array substrate). Optionally, the
array substrate includes an active layer made of a low temperature
polysilicon (LTPS) material (e.g., a LTPS array substrate).
Optionally, the array substrate includes an active layer made of an
amorphous silicon (e.g., an amorphous silicon array substrate.
[0109] Optionally, the substrate is a touch control substrate.
Optionally, the conductive pattern includes a bridging electrode
for connecting touch sensing electrodes.
[0110] Optionally, the substrate is an array substrate or a color
filter on array substrate. Optionally, the conductive pattern
includes one or a combination of a gate electrode, a gate line, and
a gate line lead wire. Optionally, the gate electrode, the gate
line, and the gate line lead wire are all made of the conductive
layer 10 as described herein. Due to the destructive interference
of light in the light destructive interference sub-layer 13 and the
enhanced light absorption in the light absorption sub-layer 12,
reflection of light (e.g., either an ambient light or a backlight)
on the surface of the metal sub-layer 11 can be eliminated or
significantly reduced, obviating the need for a black matrix in the
array substrate or a color filter on array substrate.
[0111] Optionally, the substrate is an array substrate or a color
filter on array substrate. Optionally, the conductive pattern
includes one or a combination of a source/drain electrode, a data
line connected to the source/drain electrode, and a data line lead
wire thereof. Optionally, the source/drain electrode, the date line
connected to the source/drain electrode, and the date line lead
wire thereof are all made of the conductive layer 10 as described
herein. Due to the destructive interference of light in the light
destructive interference sub-layer 13 and the enhanced light
absorption in the light absorption sub-layer 12, reflection of
light (e.g., either an ambient light or a backlight) on the surface
of the metal sub-layer 11 can be eliminated or significantly
reduced, obviating the need for a black matrix in the array
substrate or a color filter on array substrate.
[0112] Optionally, the conductive layer 10 is a source/drain
electrode in a thin film transistor, the source/drain electrode is
electrically connected to the active layer on one side. In this
case, the light absorption sub-layer 12 and the light destructive
interference sub-layer 13 are disposed on only one side of the
metal sub-layer 11, i.e., the side distal to the active layer.
The
[0113] Optionally, the substrate is an array substrate or a color
filter on array substrate. Optionally, the conductive pattern is a
common electrode line.
[0114] FIG. 5 is a plan view of a display substrate having a
present conductive layer in some embodiments. Referring to FIG. 5,
the substrate in the embodiment is a color filter on array
substrate 01. The common electrode line 31 in FIG. 5 is made of the
conductive layer 10 as described herein, i.e., the common electrode
line 31 includes a metal sub-layer, a light absorption sub-layer 12
and a light destructive interference sub-layer 13. The common
electrode line 31 is electrically connected to the common
electrode, and extends throughout the area containing the gate
electrode, the date line, and the thin film transistor.
[0115] FIG. 6 is a cross-sectional view along the A-A' direction of
the display substrate in FIG. 5. Referring to FIG. 6, the color
filter on array substrate in the embodiment includes a base
substrate 20, and further includes a gate insulating layer 33, a
data line 34, a first passivation layer 35, a color filter layer
36, an organic planarization layer 37, a common electrode 38, the
common electrode line 31, a second passivation layer 39, and a
pixel electrode 32, sequentially formed on the base substrate 20.
The color filter layer may include a red color filter, a green
color filter and a blue color filter. FIG. 6 only shows two color
filters, i.e., the red color filter and the green color filter.
[0116] FIG. 7 is a cross-sectional view along the B-B' direction of
the display substrate in FIG. 5. Referring to FIG. 7, the color
filter on array substrate in the embodiment further includes a gate
electrode 40 and a gate line 41 between the base substrate 20 and
the gate insulating layer 22; an active layer 42 on the gate
insulating layer 33, a source electrode 43a and a drain electrode
43b on a side of the active layer distal to the gate insulating
layer 33, and a first passivation layer 35 on a side of the
source/drain electrode distal to the base substrate 20.
[0117] In another aspect, the present disclosure further provides a
display apparatus having a substrate as described herein. Examples
of display apparatuses include, but are not limited to, a liquid
crystal display panel, a liquid crystal television, an organic
light emitting display panel, a digital album, a mobile phone, a
tablet computer, etc.
[0118] In some embodiments, the liquid crystal display panel or the
liquid crystal television is of an advanced super dimensional
switching (ADS) type, an in-plane switching (IPS) type, a twist
nematic (TN) type, or a vertical align (VA) type.
[0119] The foregoing description of the embodiments of the
invention has been presented for purposes of illustration and
description. It is not intended to be exhaustive or to limit the
invention to the precise form or to exemplary embodiments
disclosed. Accordingly, the foregoing description should be
regarded as illustrative rather than restrictive. Obviously, many
modifications and variations will be apparent to practitioners
skilled in this art. The embodiments are chosen and described in
order to best explain the principles of the invention and its best
mode practical application, thereby to enable persons skilled in
the art to understand the invention for various embodiments and
with various modifications as are suited to the particular use or
implementation contemplated. It is intended that the scope of the
invention be defined by the claims appended hereto and their
equivalents in which all terms are meant in their broadest
reasonable sense unless otherwise indicated. Therefore, the term
"the invention", "the present invention" or the like does not
necessarily limit the claim scope to a specific embodiment, and the
reference to exemplary embodiments of the invention does not imply
a limitation on the invention, and no such limitation is to be
inferred. The invention is limited only by the spirit and scope of
the appended claims. Moreover, these claims may refer to use
"first", "second", etc. following with noun or element. Such terms
should be understood as a nomenclature and should not be construed
as giving the limitation on the number of the elements modified by
such nomenclature unless specific number has been given. Any
advantages and benefits described may not apply to all embodiments
of the invention. It should be appreciated that variations may be
made in the embodiments described by persons skilled in the art
without departing from the scope of the present invention as
defined by the following claims. Moreover, no element and component
in the present disclosure is intended to be dedicated to the public
regardless of whether the element or component is explicitly
recited in the following claims.
* * * * *