U.S. patent application number 15/376192 was filed with the patent office on 2017-06-08 for etching of solar cell materials.
This patent application is currently assigned to SunPower Corporation. The applicant listed for this patent is SunPower Corporation. Invention is credited to Douglas H. ROSE, David D. SMITH, Pongsthorn URALWONG.
Application Number | 20170162728 15/376192 |
Document ID | / |
Family ID | 34104464 |
Filed Date | 2017-06-08 |
United States Patent
Application |
20170162728 |
Kind Code |
A1 |
ROSE; Douglas H. ; et
al. |
June 8, 2017 |
ETCHING OF SOLAR CELL MATERIALS
Abstract
A solar cell is fabricated by etching one or more of its layers
without substantially etching another layer of the solar cell. In
one embodiment, a copper layer in the solar cell is etched without
substantially etching a topmost metallic layer comprising tin. For
example, an etchant comprising sulfuric acid and hydrogen peroxide
may be employed to etch the copper layer selective to the tin
layer. A particular example of the aforementioned etchant is a
Co-Bra Etch.RTM. etchant modified to comprise about 1% by volume of
sulfuric acid, about 4% by volume of phosphoric acid, and about 2%
by volume of stabilized hydrogen peroxide. In one embodiment, an
aluminum layer in the solar cell is etched without substantially
etching the tin layer. For example, an etchant comprising potassium
hydroxide may be employed to etch the aluminum layer without
substantially etching the tin layer.
Inventors: |
ROSE; Douglas H.; (San Jose,
CA) ; URALWONG; Pongsthorn; (Campbell, CA) ;
SMITH; David D.; (Campbell, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SunPower Corporation |
San Jose |
CA |
US |
|
|
Assignee: |
SunPower Corporation
San Jose
CA
|
Family ID: |
34104464 |
Appl. No.: |
15/376192 |
Filed: |
December 12, 2016 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
13220974 |
Aug 30, 2011 |
9553229 |
|
|
15376192 |
|
|
|
|
12251296 |
Oct 14, 2008 |
8029683 |
|
|
13220974 |
|
|
|
|
10632747 |
Aug 1, 2003 |
7455787 |
|
|
12251296 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 31/022425 20130101;
H01L 31/18 20130101; H01L 31/02008 20130101; Y02E 10/50
20130101 |
International
Class: |
H01L 31/0224 20060101
H01L031/0224; H01L 31/02 20060101 H01L031/02 |
Claims
1-20. (canceled)
21. A solar cell, comprising: a silicon dioxide layer disposed on a
silicon substrate, wherein the silicon dioxide layer includes a
vias; an aluminum layer disposed over the a silicon dioxide layer,
wherein the vias allows for the aluminum layer to contact a doped
region of the silicon substrate; a titanium-tungsten (TiW) layer
disposed over the aluminum layer; a first copper layer disposed
over the titanium-tungsten (TiW) layer; a second copper layer
disposed on the first copper layer; and a solderable metallic layer
comprising tin disposed on the first copper layer.
22. The solar cell of claim 21, wherein the solderable metallic
layer comprises an electroplated tin layer.
23. The solar cell of claim 21, wherein the silicon dioxide layer
has a thickness of 950 Angstroms.
24. The solar cell of claim 21, further comprising an interconnect
lead soldered on the solderable metallic layer.
25. The solar cell of claim 21, wherein the solderable metallic
layer has a thickens of 5 microns.
26. The solar cell of claim 21, wherein the first copper layer has
a thickness of 1600 Angstroms.
27. The solar cell of claim 21, wherein the second copper layer has
a thickness of 20 microns.
28. The solar cell of claim 21, wherein the titanium-tungsten (TiW)
layer has a thickness of 1000 Angstroms
29. The solar cell of claim 21, wherein the aluminum layer
comprises aluminum having 1% silicon alloy.
30. A solar cell, comprising: a silicon dioxide layer disposed on a
silicon substrate, wherein the silicon dioxide layer includes a
vias; a sputtered aluminum layer disposed over the a silicon
dioxide layer, wherein the vias allows for the sputtered aluminum
layer to contact a doped region of the silicon substrate; a
sputtered titanium-tungsten (TiW) layer disposed over the sputtered
aluminum layer; a copper seed layer disposed over the sputtered
titanium-tungsten (TiW) layer; an electroplated copper layer
disposed on the copper seed layer; and a solderable metallic layer
disposed on the electroplated copper layer, wherein the solderable
metallic layer comprises an electroplated tin layer.
31. The solar cell of claim 30, wherein the solderable metallic
layer has a thickens of 5 microns.
32. The solar cell of claim 30, wherein the electroplated copper
layer has a thickness of 20 microns.
33. The solar cell of claim 30, wherein the copper seed layer has a
thickness of 1600 Angstroms.
34. The solar cell of claim 30, wherein the sputtered
titanium-tungsten (TiW) layer has a thickness of 1000 Angstroms
35. The solar cell of claim 30, wherein the sputtered aluminum
layer comprises aluminum with having 1% silicon alloy.
36. A solar cell, comprising: a silicon dioxide layer disposed on a
silicon substrate, wherein the silicon dioxide layer includes a
vias; a metal stack disposed over a portion of the a silicon
dioxide layer, wherein the vias allows for the metal stack to
contact a doped region of the silicon substrate; an electroplated
copper layer disposed on the metal stack, wherein the metal stack
allows for electrical connection between electroplated copper layer
and the doped region of the silicon substrate; and a solderable
metallic layer disposed over the electroplated copper layer,
wherein the solderable metallic layer comprises an electroplated
tin layer.
37. The solar cell of claim 36, wherein the metal stack comprises:
a sputtered aluminum layer disposed over a portion of the a silicon
dioxide layer, wherein the vias allows for the sputtered aluminum
layer to contact a doped region of the silicon substrate; a
sputtered titanium-tungsten (TiW) layer disposed over the sputtered
aluminum layer; and a copper seed layer disposed over the sputtered
titanium-tungsten (TiW) layer.
38. The solar cell of claim 36, wherein the solderable metallic
layer has a thickens of 5 microns.
39. The solar cell of claim 36, wherein the copper seed layer has a
thickness of 1600 Angstroms.
40. The solar cell of claim 46, wherein the electroplated copper
layer has a thickness of 20 microns.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 13/220,974, filed on Aug. 30, 2011, which is a continuation of
U.S. application Ser. No. 12/251,296, filed on Oct. 14, 2008, now
U.S. Pat. No. 8,029,683, which is a divisional of U.S. application
Ser. No. 10/632,747, filed on Aug. 1, 2003, now U.S. Pat. No.
7,455,787. The just mentioned disclosures are incorporated herein
by reference in their entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates generally to solar cells, and
more particularly but not exclusively to solar cell fabrication
processes and structures.
[0004] 2. Description of the Background Art
[0005] Solar cells are well known devices for converting solar
radiation to electrical energy. They may be fabricated on a
semiconductor wafer using semiconductor processing technology.
Generally speaking, a solar cell may be fabricated by forming
p-doped and n-doped regions in a silicon substrate. Solar radiation
impinging on the solar cell creates electrons and holes that
migrate to the p-doped and n-doped regions, thereby creating
voltage differentials between the doped regions. The side of the
solar cell where connections to an external electrical circuit are
made includes a topmost metallic surface that is electrically
coupled to the doped regions. There may be several layers of
materials between the metallic surface and the doped regions. These
materials may be patterned and etched to form internal structures.
It is important to etch these materials in a way that would not
compromise the operability and performance of the solar cell.
SUMMARY
[0006] A solar cell is fabricated by etching one or more of its
layers without substantially etching another layer of the solar
cell. In one embodiment, a copper layer in the solar cell is etched
without substantially etching a topmost metallic layer comprising
tin. For example, an etchant comprising sulfuric acid and hydrogen
peroxide may be employed to etch the copper layer selective to the
tin layer. A particular example of the aforementioned etchant is a
Co-Bra Etch.RTM. etchant modified to comprise about 1% by volume of
sulfuric acid, about 4% by volume of phosphoric acid, and about 2%
by volume of stabilized hydrogen peroxide. In one embodiment, an
aluminum layer in the solar cell is etched without substantially
etching the tin layer. For example, an etchant comprising potassium
hydroxide may be employed to etch the aluminum layer without
substantially etching the tin layer.
[0007] These and other features of the present invention will be
readily apparent to persons of ordinary skill in the art upon
reading the entirety of this disclosure, which includes the
accompanying drawings and claims.
DESCRIPTION OF THE DRAWINGS
[0008] FIGS. 1-4 show sectional views schematically illustrating
the fabrication of a solar cell in accordance with an embodiment of
the present invention.
[0009] FIG. 5 shows a flow diagram of a method of etching one or
more materials in a solar cell in accordance with an embodiment of
the present invention.
[0010] The use of the same reference label in different drawings
indicates the same or like components.
DETAILED DESCRIPTION
[0011] In the present disclosure, numerous specific details are
provided such as examples of process parameters, materials, process
steps, and structures to provide a thorough understanding of
embodiments of the invention. Persons of ordinary skill in the art
will recognize, however, that the invention can be practiced
without one or more of the specific details. In other instances,
well-known details are not shown or described to avoid obscuring
aspects of the invention.
[0012] FIGS. 1-4 show sectional views schematically illustrating
the fabrication of a solar cell in accordance with an embodiment of
the present invention. FIGS. 1-4, which are not drawn to scale,
show the solar cell in the middle of the fabrication process.
Masking steps are not shown or described in the interest of
clarity.
[0013] In FIG. 1, the solar cell is shown as having a tin (Sn)
layer 112, a copper (Cu) layer 110, a copper layer 108, a
titanium-tungsten (TiW) layer 106, an aluminum (Al) layer 104, a
silicon dioxide (SiO.sub.2) layer 102, and a silicon (Si) substrate
100. Tin layer 112 is on the backside of the solar cell, while
silicon substrate 100 is towards the front or sun side. The solar
cell being fabricated is a so-called "backside-contact solar cell"
in that all electrical connections to the doped regions (not shown)
in silicon substrate 100 are made from the backside of the solar
cell by way of tin layer 112. However, it is to be noted that the
present invention is not limited to backside-contact solar cells.
The teachings of the present disclosure may be employed in the
fabrication of solar cells in general.
[0014] In the example of FIG. 1, tin layer 112 is the topmost
metallic layer and provides a solderable metallic surface on which
electrical connections may be made. For example, interconnect leads
coupled to an external electrical circuit or other solar cells may
be soldered on tin layer 112. Tin layer 112 also protects
underlying layers of materials. For example, tin layer 112 helps
prevent copper layer 110 from corroding. In one embodiment, tin
layer 112 is electroplated to a thickness of about 5 microns on
copper layer 110.
[0015] Copper layer 110, copper layer 108, titanium-tungsten layer
106, and aluminum layer 104 form a Cu/TiW/Al metal stack that
provides electrical connectivity to doped regions in silicon
substrate 100. In one embodiment, copper layer 110 is electroplated
to a thickness of about 20 microns on copper layer 108. Masks (not
shown) may be formed between individual structures of copper layer
110 in gaps 113 before the electroplating process. The masks are
removed after the electroplating process to obtain the structure
shown in FIG. 1.
[0016] Copper layer 108 serves as a seed layer for the
electroplating of copper layer 110. Copper layer 108 may be formed
to a thickness of about 1600 Angstroms by sputtering.
Titanium-tungsten layer 106 and aluminum layer 104 may also be
formed by sputtering. In one embodiment, titanium-tungsten layer
106 and aluminum layer 104 are each formed to a thickness of about
1000 Angstroms. Aluminum layer 104 may comprise aluminum with 1%
silicon alloy.
[0017] Silicon dioxide layer 102 serves as a dielectric layer
providing electrical isolation between the overlying Cu/TiW/Al
metal stack and silicon substrate 100. Vias are formed through
silicon dioxide layer 102 in sections where the Cu/TiW/Al metal
stack makes contact with the doped regions in silicon substrate
100. In one embodiment, silicon dioxide layer 102 is formed to a
thickness of about 950 Angstroms.
[0018] There may be steps in the fabrication of a solar cell where
an etch is performed through a stack of materials comprising
copper, titanium-tungsten, and aluminum. To prevent damaging the
solar cell, each layer in the material stack may need to be etched
without attacking (i.e., excessively etching) other layers of the
solar cell. In the example of FIG. 1, copper layer 108,
titanium-tungsten layer 106, and aluminum layer 104 need to be
etched without attacking tin layer 112. Excessive etching of tin
layer 112 may compromise its ability to protect the underlying
metal stack.
[0019] One way of etching through copper layer 108,
titanium-tungsten layer 106, and aluminum layer 104 is to use a
so-called "PAWN" (phosphoric, acetic, water, nitric) solution to
etch copper layer 108 and aluminum layer 104. For example, the
sample of FIG. 1 may be wet etched in a PAWN bath to etch copper
layer 108, in a hydrogen peroxide bath to etch titanium-tungsten
layer 106, and in a PAWN bath to etch aluminum layer 104. PAWN is
commonly used to etch aluminum in the electronics industry, which
does not require selectivity to copper, tin, and other materials
employed in solar cells. The inventors found that PAWN has a
tendency to attack tin layer 112 during the etching of copper layer
108 and aluminum layer 104. The present disclosure provides
improved techniques for etching a copper layer, a titanium-tungsten
layer, and/or aluminum layer without substantially etching a tin
layer in a solar cell or similar device. The techniques may be
employed to etch several layers of a material stack or a single
layer.
[0020] Continuing in FIG. 2, copper layer 108 is etched selective
to tin layer 112 and titanium-tungsten layer 106. Copper layer 108
may be wet etched in a solution comprising sulfuric acid and
hydrogen peroxide. For example, copper layer 108 may be wet etched
using a Co-Bra Etch.RTM. etchant modified to comprise about 1% by
volume of sulfuric acid, about 4% by volume of phosphoric acid, and
about 2% by volume of stabilized hydrogen peroxide. A
Perma-Etch.RTM. etchant may also be employed to etch copper layer
108. Co-Bra Etch.RTM. and Perma-Etch.RTM. etchants are both
commercially available from Electrochemicals, Inc. of Maple Plain,
Minn. In one experiment, a sample similar to that shown in FIG. 1
was dipped in a bath of the aforementioned modified Co-Bra
Etch.RTM. etchant for about 1 minute at 40.degree. C. About 1600
Angstroms of copper layer 108 were removed without excessively
etching tin layer 112 or titanium-tungsten layer 106.
[0021] In FIG. 3, titanium-tungsten layer 106 is etched selective
to tin layer 112, copper layers 110 and 108, and aluminum layer
104. Titanium-tungsten layer 106 may be wet etched in a bath of
hydrogen peroxide, for example. The hydrogen peroxide may be 30% by
weight (balance is water).
[0022] In FIG. 4, aluminum layer 104 is etched selective to tin
layer 112, copper layers 110 and 108, titanium-tungsten layer 106,
and silicon dioxide layer 102. Aluminum layer 104 may be wet etched
in a bath of potassium hydroxide. In one embodiment, aluminum layer
104 is wet etched using an etchant comprising about 1% by volume of
potassium hydroxide in water. Other concentrations of potassium
hydroxide may also be employed depending on the application. In one
experiment, a sample similar to that shown in FIG. 3 was dipped in
a bath comprising about 1% by volume of potassium hydroxide in
water for about 1.5 minutes at 40.degree. C. About 1000 Angstroms
of aluminum layer 104 were removed without excessively etching tin
layer 112, copper layers 110 and 108, titanium-tungsten layer 106,
and silicon dioxide layer 102.
[0023] The teachings of the present disclosure may be generally
employed to etch one or more layers of materials in a solar cell
being fabricated. For example, the etching techniques disclosed
herein may be employed in the fabrication of solar cells disclosed
in the following commonly-assigned disclosures, which are
incorporated herein by reference in their entirety: U.S.
application Ser. No. 10/412,638, entitled "Improved Solar Cell and
Method of Manufacture," filed on Apr. 10, 2003 by William P.
Mulligan, Michael J. Cudzinovic, Thomas Pass, David Smith, Neil
Kaminar, Keith McIntosh, and Richard M. Swanson; and U.S.
application Ser. No. 10/412,711, entitled "Metal Contact Structure
For Solar Cell And Method Of Manufacture," filed on Apr. 10, 2003
by William P. Mulligan, Michael J. Cudzinovic, Thomas Pass, David
Smith, and Richard M. Swanson. It is to be noted, however, that the
aforementioned disclosures are referenced herein only as
examples.
[0024] The etch chemistries provided herein not only allow
selectivity to materials found in solar cells, but also have
relatively high etch capacity, are cost-effective, and are easily
replenished and controlled. Embodiments of the present invention
may thus be advantageously employed to etch a single layer of
material or a stack of materials in solar cell fabrication
processes in general.
[0025] Referring now to FIG. 5, there is shown a flow diagram of a
method 500 of etching one or more materials in a solar cell in
accordance with an embodiment of the present invention. Among its
other uses, method 500 may be employed to etch through a material
stack comprising copper, titanium-tungsten, and aluminum in a solar
cell. Method 500 will be described using FIGS. 1-4 as an
example.
[0026] In step 502 and with reference to FIG. 1, a plating mask, if
any, that may have been employed in the electroplating of copper
layer 110 is removed. Step 502 may be performed by placing the
sample of FIG. 1 in about 2% to 3% potassium hydroxide bath at
40.degree. C. for about 5 minutes.
[0027] In step 504, the sample of FIG. 1 is rinsed. For example,
the sample of FIG. 1 may be placed in a bath of deionized water,
spray-rinsed with deionized water, and then dumped-rinsed in
deionized water.
[0028] In step 506, copper layer 108 is etched as shown in FIG. 2.
Step 506 may be performed by placing the sample of FIG. 1 in a bath
of a Co-Bra Etch.RTM. etchant modified to comprise about 1% by
volume of sulfuric acid, about 4% by volume of phosphoric acid, and
about 2% by volume of stabilized hydrogen peroxide at 43.degree. C.
with robotic agitation for about 2 minutes and 10 seconds.
[0029] In step 508, the sample of FIG. 2 is rinsed. Step 508 may be
performed by dump-rinsing the sample of FIG. 2 in deionized
water.
[0030] In step 510, titanium-tungsten layer 106 is etched as shown
in FIG. 3. Step 510 may be performed by placing the sample of FIG.
3 in a bath of about 30% by weight hydrogen peroxide at 40.degree.
C. with robotic agitation for about 2 minutes and 15 seconds.
[0031] In step 512, the sample of FIG. 3 is rinsed. Step 512 may be
performed by dump-rinsing the sample of FIG. 3 in deionized
water.
[0032] In step 514, aluminum layer 104 is etched as shown in FIG.
4. Step 514 may be performed by placing the sample of FIG. 3 in a
bath of about 1% by volume potassium hydroxide at 40.degree. C. for
about 2 minutes and 15 seconds.
[0033] In step 516, the sample of FIG. 4 is rinsed. Step 516 may be
performed by dump-rinsing the sample of FIG. 4 in deionized
water.
[0034] In step 518, the sample of FIG. 4 is dried. Step 518 may be
performed by spin-rinse drying. Air-knife and meniscus drying
techniques may also be employed to dry the sample of FIG. 4.
[0035] While specific embodiments of the present invention have
been provided, it is to be understood that these embodiments are
for illustration purposes and not limiting. For example, the above
described etchants may also be applied using in-line drag-through
and in-line spray systems. Many additional embodiments will be
apparent to persons of ordinary skill in the art reading this
disclosure.
* * * * *