U.S. patent application number 15/012873 was filed with the patent office on 2017-05-11 for high voltage junctionless field effect device and its method of fabrication.
The applicant listed for this patent is Zing Semiconductor Corporation. Invention is credited to Richard R. Chang, Deyuan Xiao.
Application Number | 20170133510 15/012873 |
Document ID | / |
Family ID | 58546488 |
Filed Date | 2017-05-11 |
United States Patent
Application |
20170133510 |
Kind Code |
A1 |
Xiao; Deyuan ; et
al. |
May 11, 2017 |
HIGH VOLTAGE JUNCTIONLESS FIELD EFFECT DEVICE AND ITS METHOD OF
FABRICATION
Abstract
A structure and a method of fabrication are disclosed of a high
voltage junctionless field effect device. A channel layer and a
barrier layer are formed sequentially underneath the gate
structure. The width of energy band gap of the barrier layer is
wider than that of the channel layer. Thus the two dimensional
electron gas (2-DEG) generated in the interface between the channel
layer and the barrier layer of this junctionless field effect
device has higher electron mobility. The structure of the device of
this disclosure has a higher breakdown voltage which is
advantageous for a high voltage junctionless field device. The
structure offers advantages in device performance and
reliability.
Inventors: |
Xiao; Deyuan; (Shanghai,
CN) ; Chang; Richard R.; (Shanghai, CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Zing Semiconductor Corporation |
Shanghai |
|
CN |
|
|
Family ID: |
58546488 |
Appl. No.: |
15/012873 |
Filed: |
February 2, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 29/7786 20130101;
H01L 21/443 20130101; H01L 29/51 20130101; H01L 29/7886 20130101;
H01L 29/495 20130101; H01L 21/0217 20130101; H01L 21/02568
20130101; H01L 21/0228 20130101; H01L 27/10879 20130101; H01L
29/66969 20130101; H01L 21/0273 20130101; H01L 27/1211 20130101;
H01L 27/0886 20130101; H01L 29/517 20130101; H01L 29/24 20130101;
H01L 29/0657 20130101; H01L 21/02631 20130101; H01L 29/785
20130101; H01L 21/02271 20130101; H01L 21/47635 20130101; H01L
21/0262 20130101; H01L 27/0924 20130101; H01L 21/02266 20130101;
H01L 29/0649 20130101; H01L 29/41775 20130101 |
International
Class: |
H01L 29/788 20060101
H01L029/788; H01L 29/78 20060101 H01L029/78; H01L 29/24 20060101
H01L029/24; H01L 21/02 20060101 H01L021/02; H01L 29/06 20060101
H01L029/06; H01L 21/443 20060101 H01L021/443; H01L 29/49 20060101
H01L029/49; H01L 21/4763 20060101 H01L021/4763; H01L 21/027
20060101 H01L021/027; H01L 29/66 20060101 H01L029/66; H01L 29/51
20060101 H01L029/51 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 6, 2015 |
CN |
201510746889.2 |
Claims
1. A method for forming a high-voltage non-junction field effect
device, the method comprising the steps of: providing a substrate;
forming a fin-shaped structure on the substrate; sequentially
forming on a surface of the fin-shaped structure of a channel
layer, a barrier layer, a gate dielectric layer and a metal layer,
wherein an energy band gap energy of the barrier layer is greater
than a width of the channel layer; etching the metal layer and the
gate dielectric layer to form a gate structure; forming spacers on
both sides of the gate structure; forming source and drain on side
walls on both sides of the barrier layer.
2. The method of claim 1, wherein the substrate is a
silicon-on-insulator substrate.
3. The method of claim 1, wherein the channel layer is made of
MoS2, WS2, MoSe2, WSe2, WTe2 in or one kind of MoTe2.
4. The method of claim 3, wherein a thickness range of the channel
layer is 0.5 nm.about.10 nm.
5. The method of claim 1, wherein the barrier layer is made of
MoS2, WS2, MoSe2, WSe2, WTe2 or one kind of MoTe2.
6. The method of claim 5, wherein a thickness of the barrier layer
is in a range of 0.1 nm.about.5 nm.
7. The method of claim 3, wherein the channel layer and the barrier
layer are made by the forming processes of CVD, PVD, ALD, ALE, MBE,
MOCVD, UHCVD, RTCVD or MEE.
8. The method of claim 1, wherein the gate dielectric layer is made
of silica, alumina, zirconia or hafnia.
9. The method of claim 8, wherein the gate dielectric layer using
the forming processes of MOCVD, CVD, ALD or MBE.
10. The method of claim 1, wherein the metal layer is made of Cr or
Au.
11. The method of claim 10, wherein the metal layer comprising a
thickness in a range of 100 nm.about.300 nm.
12. The method of claim 10, wherein the metal layer using a forming
process of PVD, MOCVD or ALD.
13. The method of claim 1, wherein the step of etching the metal
layer and the gate dielectric layer comprises: coating a
photoresist on the metal layer, and then patterning the photoresist
and using the patterned photoresist as a mask; dry etching the
metal layer and the gate dielectric layer using the patterned
photoresist as the mask to form the gate structure comprising the
metal layer and the gate dielectric layer.
14. The method of claim 1, wherein the spacer is made of silicon
nitride.
15. The method of claim 1, wherein the source and drain electrodes
made of Au.
16. (canceled)
Description
[0001] The present application claims the priority to Chinese
Patent Applications No. 201510746889.2, filed with the Chinese
State Intellectual Property Office on Nov. 6, 2015, which is
incorporated herein by reference in its entirety.
TECHNICAL FIELD
[0002] The present invention relates to the field of high voltage
modulation-doped high electron mobility field effect device. In
particular, the invention relates to a structure and method of
fabrication of a high voltage junctionless field effect device for
providing enhancement in performance and reliability.
BACKGROUND
[0003] The basic structure of a high electron mobility transistor,
HEMT, has a source and drain structure with a heterojunction formed
by modulation-doped channel layer and donor-supply layer, typically
consisting of an undoped GaAs channel layer and a highly doped
n-type AlGaAs donor-supply layer. Using a single doped AlGaAs and
undoped GaAs heterojunction to achieve field effect control of
electron accumulation at the interface. The electrons, two
dimensional electron gas, 2-DEG, generated in the thin junction
layer, confined by quantum effects to a thin sheet, are free to
move along this thin layer without hindrance and interference of
doped ionized impurities, resulting high electron mobility allowing
fast response times and low noise operation. HEMT is commonly used
in voltage control and regulation devices, by varying the gate
voltage, Vg, to change the depth of hetero-junction potential well,
to vary the sheet charge density of 2-DEG achieving the regulation
of the working current.
[0004] For GaAs based HEMT, normally the heavily doped n-AlxGal-xAs
control layer is depleted. For depletion mode device, the
n-AlxGal-xAs is thicker and heavily doped, 2-DEG exist even at
Vg=0. Otherwise when the device is enhancement-mode, at Vg=0,
Schottky depletion layer extended to GaAs layer; Hence, for HEMT,
the main influencing factor is the doping density and the
especially the thickness of wide band gap semiconductor layer. The
surface density of 2-DEG, Ns, in HEMT, is mainly influenced by the
sub-band of potential well of the heterojunction (i=0 and 1). 2-DEG
surface charge density is Vg regulated.
SUMMARY
[0005] The purpose of the present invention is to provide a method
of forming a high-voltage junctionless field effect device of high
electron mobility and high performance. The invention is a
non-planar quantum well transistor with 2D electronic layer
channel, comprising a source electrode, a drain electrode and a 2D
semiconducting channel layer consisting of a single or
multi-layered 2-dimensional material and a 2D semiconducting
barrier layer; The energy band-gap width of the 2D semiconducting
barrier Layer is larger than that of the 2D semiconducting channel
layer. The 2D semiconducting material consisting of a single or
multi 2-dimensional layer(s) made from one of the following
materials: MoS.sub.2, WS.sub.2, MoS.sub.2, MoSe.sub.2, WS.sub.2,
WSe.sub.2, MoTe.sub.2 or WTe.sub.2.
[0006] The present invention provides a method of fabrication of a
high-voltage junctionless field effect device, comprising the steps
of:
[0007] Providing a substrate;
[0008] Fin-shaped structure formed on the substrate;
[0009] Sequentially formed on the surface of the fin-shaped
structure a channel layer, a barrier layer, a gate dielectric layer
and the metal layer, wherein the energy band gap of the barrier
layer is greater than the width of the energy band gap of the
channel layer;
[0010] Etching the metal layer and the gate dielectric layer to
form a gate structure;
[0011] Forming spacers on both sides of the gate structure;
[0012] Formed source and drain electrodes on the side walls on both
sides of the barrier layer.
[0013] Further, in described method of forming the high-voltage
junctionless field effect device, the substrate is silicon on
insulator.
[0014] Further, in the high-voltage junctionless field effect
device, the channel layer is made of MoS.sub.2, WS.sub.2,
MoSe.sub.2, WSe.sub.2, WTe.sub.2 the MoTe.sub.2 or one.
[0015] Further, in the high-voltage junctionless field effect
device, a thickness range of the channel layer is 0.5 nm.about.10
nm.
[0016] Further, in the high-voltage junctionless field effect
device, the barrier layer is made of MoS.sub.2, WS.sub.2,
MoSe.sub.2, WSe.sub.2, WTe.sub.2 or one of the MoTe.sub.2.
[0017] Further, in the high-voltage junctionless field effect
device, a thickness of the barrier layer is a range of 0.1
nm.about.5 nm.
[0018] Further, in the high-voltage junctionless field effect
device, the channel layer and the barrier layer are made by using
the processes of CVD, PVD, ALD, ALE, MBE, MOCVD, UHCVD, RTCVD or
MEE.
[0019] Further, in the forming method of the described
high-pressure junctionless field effect device, the gate dielectric
layer is made of silica, alumina, zirconia or hafnia.
[0020] Further, in the described high-pressure junctionless field
effect device, the gate dielectric layer are formed using MOCVD,
CVD, ALD or MBE process.
[0021] Further, in the high-voltage junctionless field effect
device, the metal layer is made of Cr or Au.
[0022] Further, in the high-voltage junctionless field effect
device, the metal layer thickness in the range of 100 nm.about.300
nm.
[0023] Further, in the high-voltage junctionless field effect
device, the metal layer is formed using PVD, MOCVD or ALD
process.
[0024] Further, in the high-voltage junctionless field effect
device, the steps of etching the metal layer and the gate
dielectric layer comprises:
[0025] Photoresist coating on the metal layer, and the patterning
the photoresist;
[0026] The patterned photoresist serves as a mask, in the process
of sequentially dry etching the metal layer and the gate dielectric
layer, to form a gate structure.
[0027] Further, in the high-voltage junctionless field effect
device, the sidewall spacers are made of silicon nitride.
[0028] Further, in the high-voltage junctionless field effect
device, the source and drain electrodes are made of Au.
[0029] In the present invention, a high-pressure junctionless field
effect device is proposed, using the above mentioned method of
forming a high-voltage junctionless field effect device,
characterized by:
[0030] comprising a substrate provided with a fin-shaped structure,
a channel layer, a barrier layer, a gate dielectric layer, a metal
layer, spacers and the source and drain electrodes, wherein the
said channel layer, the barrier layer and the gate dielectric layer
are sequentially formed on the fin-shaped structure, the metal
layer located on the surface of the gate dielectric layer, the
sidewall spacer structure located on both sides of the gate, the
source and drain electrodes located on both sides of the barrier
layer sidewall.
[0031] Compared with the prior art, the beneficial effects of the
present invention is mainly in: successively under the gate
structure forming a channel layer and the barrier layer and the
barrier layer bandgap energy is wider than the band gap width of
the channel layer. This structure allows the generation the
two-dimensional electron gas on the interface between the channel
layer and the barrier layer of the high-voltage junctionless field
effect device, having high electron mobility, and high breakdown
voltage, resulting in better performance and reliability.
BRIEF DESCRIPTION OF THE DRAWINGS
[0032] FIG. 1 illustrates the flow chart of forming a high voltage
junctionless field effect device according to an embodiment of
present invention.
[0033] FIGS. 2A to 9A schematically illustrate the cross-sections
parallel to the channel direction of a high voltage junctionless
field effect device according to an embodiment of present
invention.
[0034] FIGS. 2B to 9B schematically illustrate the cross-sections
perpendicular to the channel direction of a high voltage
junctionless field effect device according to an embodiment of
present invention.
[0035] FIGS. 10A and 10B schematically illustrate the generation of
two dimensional electron gas in a high voltage junctionless field
effect device according to an embodiment of present invention.
DETAILED DESCRIPTION
[0036] A schematic and more detailed description of a method of
fabrication of a high voltage junctionless field effect device, a
preferred embodiment of the present invention, is provided. The
embodiment is described in sufficient detail to enable those
skilled in the art to practice it. It should be understood that the
invention described herein may be modified and varied, and still
achieve advantageous effects of the present invention. Thus, the
fabrication processes described should be understood as widely
known to those skilled in the art, but not as a limitation of the
present invention.
[0037] In the following description, not all the features of
well-known functions and structures of an actual embodiment are
described in detail, as they may entail unnecessary details. It
should be understood that in the development of any actual
embodiment, the implementation details must be made in order to
achieve the specific goals of the developers, such as in accordance
with the system or the commercial constraint. In addition, it
should be understood that such a development effort might be
complex and time-consuming, but for those skilled in the art they
are the processes are widely known and standard routine
practices.
[0038] In the following paragraphs with reference to the
accompanying drawings by way of example the present invention is
described more specifically. According to the following description
and claims, advantages and features of the present invention will
become apparent. It should be noted that the drawings are used in a
very simplified form and are not to scale, only to facilitate and
assist the description of an embodiment of the present
invention.
[0039] FIG. 1 is a schematic of the processes of forming the
proposed invention of a high-voltage junctionless field effect
device, comprising the steps of:
[0040] S100: providing a substrate;
[0041] S200: forming a fin-shaped structure on the substrate;
[0042] S300: sequentially formed on the surface of the fin-shaped
structure of the channel layer, a barrier layer, a gate dielectric
layer and the metal layer, wherein the energy band gap energy of
the barrier layer is greater than the width of the channel
layer;
[0043] S400: etching the metal layer and the gate dielectric layer
to form a gate structure;
[0044] S500: forming spacers on both sides of the gate
structure;
[0045] S600: formed on the side walls on both sides of the barrier
layer source and drain.
[0046] Silica insulating layer specific, refer to FIGS. 2A and 2B,
the substrate in the present embodiment, a silicon-on-insulator
made of a substrate, comprising a silicon substrate 100, is formed
on the silicon substrate 100, and 110 the silicon layer is formed
on the insulating layer 110 of silicon dioxide 120, and then, using
the resist coating, exposure, development and other processes, the
surface of the silicon layer 120 is a photoresist layer to the
patterned photoresist, an abrasive layer on the silicon layer 120
is etched to form a fin-shaped structure, shown in FIG. 2B.
[0047] Next, refer to FIGS. 3A, 3B, 4A and 4B, the structure of the
surface of the fin channel layer 200 is formed sequentially, the
barrier layer 300, wherein the energy gap of the barrier layer 300
is larger than the channel layer 200 bandgap; In the present
embodiment, the channel layer 200 made of MoS.sub.2, WS.sub.2,
MoSe.sub.2, WSe.sub.2, MoTe.sub.2, or one kind of WTe.sub.2, for
example, WS.sub.2, with thickness in the range of 0.5
nm.about.10nm, e.g. 5 nm; the barrier layer 300 is made of
MoS.sub.2, WS.sub.2, MoSe.sub.2, WSe.sub.2, WTe.sub.2.
[0048] Next, refer to FIGS. 3A, 3B, 4A and 4B, the structure of the
surface of the fin channel layer 200 is formed sequentially, the
barrier layer 300, wherein the energy gap of the barrier layer 300
is larger than the channel layer 200 bandgap; In the present
embodiment, the channel layer 200 made of MoS2, WS2, MoSe2, WSe2,
MoTe2, or one kind of WTe2, for example, WS2, with thickness in the
range of 0.5 nm.about.10 nm, e.g. 5 nm; the barrier layer 300 is
made of MoS2, WS2, MoSe2, WSe2, the MoTe2 or one kind of WTe2,
having a thickness in the range of 0.1 nm.about.5 nm, for example,
3 nm; for the need to ensure energy band gap of the barrier layer
300 is greater than the bandgap of the channel layer 200, and
therefore, preferably, the material of the barrier layer 300 is
different than the material of the channel layer 200, wherein, the
channel layer 200 and the barrier layer 300 can employ CVD
(Chemical Vapor Deposition, Chemical Vapor Deposition), PVD
(Physical Vapor Deposition, Physical Vapor Deposition), ALD (Atomic
Layer Deposition, atomic deposition method), ALE (Atomic Layer
Epitaxy, atomic epitaxy), MBE (Molecular Beam Epitaxy, molecular
beam epitaxy), MOCVD (Metal-Organic Chemical Vapor Deposition
epitaxy, metal organic chemical vapor deposition epitaxy), UHCVD
(Ultra-High vacuum CVD epitaxy, ultrahigh vacuum vapor deposition),
RTCVD (Reduced-Temperature CVD epitaxy, reduce temperature vapor
deposition) or MEE (Migration Enhanced Epitaxy, migration enhanced
epitaxy) process to form.
[0049] Next, refer to FIG. 5A and 5B, on the surface of the barrier
layer 300 and silicon dioxide 110 silica, a gate dielectric layer
400 is formed. The gate dielectric layer 400 is made of alumina,
zirconia or hafnia forming.
[0050] Refer to FIGS. 6A and 6B, on the surface of the gate
dielectric layer 400, a metal layer 500, the metal layer 500 made
of Cr or Au is formed.
[0051] Next, refer to FIGS. 7A and FIG. 7B, sequentially etching
the metal layer 500 and the gate dielectric layer 400, forming a
gate structure, which includes forming a gate metal layer 400 and a
surface of the gate dielectric layer 500, wherein, of the gate
dielectric layer 400 portions of silicon dioxide layer 110 and the
barrier 300 are exposed.
[0052] Next, refer to FIGS. 8A and FIG. 8B, the spacers 600 are
formed on both sides of the gate structure, the sidewall spacer 600
is made of silicon nitride.
[0053] Next, refer to FIGS. 9A and 9B, on both sides of the
sidewall spacer 600, on the surface of the barrier layer 300,
source and drain 700 are formed, thus, a high-voltage junctionless
field effect device is formed.
[0054] Another embodiment of this invention is proposed. A
high-voltage junctionless field effect device, formed using the
method as described above comprising:
[0055] a substrate provided with a fin-shaped structure, the
channel layer 200, barrier layer 300, gate dielectric layer 400,
the metal layer 500, spacers 600, and source and drain electrodes
700, wherein the channel layer 200, barrier layer 300 and the gate
dielectric layer 400 are sequentially formed on the fin-shaped
structure. The metal layer 500 is located on the surface of the
gate dielectric layer 400, the sidewall spacer structure 600
located on both sides of the gate, the source and drain electrodes
700 located on the surface of the barrier layer 300 situated on
both side of the sidewall spacer 600.
[0056] Since, in the present embodiment, the barrier layer 300 and
the channel layer 200 formed have different energy band, thereby
two-dimensional electron gas is generated at the interface of the
barrier layer 300 and the channel layer 200. Specifically, refer to
FIGS. 10A and 10B, in FIG. 10A, when the gate voltage is not
applied to gate electrode 510, the energy bands of gate dielectric
layer 400, barrier layer 300 and the channel layer 200 have not
changed, there is no two-dimensional electron gas produced as shown
in FIG. 10B, when a voltage is applied to the gate electrode 510,
the energy band of the gate dielectric layer 400, a barrier layer
300 and the channel layer are changed, two-dimensional electron gas
(2-DEG) 210 is produced at the interface of the barrier layer 300
and the channel layer 200, thereby increasing the carrier mobility,
greatly enhance the performance of the device.
[0057] In summary, the present invention provides an embodiment of
a high voltage junctionless field effect device and method of
forming it. The gate structure is sequentially formed beneath the
channel layer and the barrier layer. The energy band gap width of
the barrier layer is greater than that of the channel layer, this
made possible the generation of two-dimensional electron gas at
interface between the channel layer and the barrier layer. The
formed high-voltage junctionless field effect device of this
invention has high electron mobility, and also has a high breakdown
voltage, and thus results a better performance and reliability.
[0058] While the present invention has been described in an
illustrative manner, it should be understood that the terminology
used is intended to be in a nature of words of description rather
than of limitation. Many modifications and variations of the
present invention and other versions are possible in light of the
above teachings, and could be apparent for those skilled in the
art. The above described embodiments of the present invention do
not limit the present invention in any way. Any person skilled in
the art, without departing from the technical scope of the present
invention, can modify and vary technical solutions and technical
content of the disclosed present invention. The modifications and
variations still fall within the scope of the present
invention.
* * * * *