U.S. patent application number 15/411867 was filed with the patent office on 2017-05-11 for x-ray generator and x-ray imaging apparatus.
The applicant listed for this patent is CANON KABUSHIKI KAISHA. Invention is credited to Tamayo Hiroki, Shigeki Matsutani, Ichiro Nomura, Takao Ogura, Miki Tamura, Kazuyuki Ueda, Yoshihiro Yanagisawa.
Application Number | 20170133192 15/411867 |
Document ID | / |
Family ID | 46940564 |
Filed Date | 2017-05-11 |
United States Patent
Application |
20170133192 |
Kind Code |
A1 |
Ogura; Takao ; et
al. |
May 11, 2017 |
X-RAY GENERATOR AND X-RAY IMAGING APPARATUS
Abstract
Provided is an X-ray generator including an electron passage in
an electron-passage forming member; and a target on an insulative
substrate. The transmission X-ray generator irradiates the target
with electrons that have passed through the electron passage to
generate X-rays. The target is provided at a central region of the
substrate; the electron passage accommodates a secondary-X-ray
generating section that generates X-rays by irradiation with
electrons reflected from the target; the secondary-X-ray generating
section and the target are disposed so that both of X-rays
generated by direct irradiation of the target with the electrons
and X-rays generated by irradiation of the secondary-X-ray
generating section with the electrons reflected from the target are
radiated to the outside; and at least part of the peripheral region
of the substrate has higher transmittance for the X-rays generated
at the secondary-X-ray generating section than the central region
of the substrate.
Inventors: |
Ogura; Takao; (Yokohama-shi,
JP) ; Yanagisawa; Yoshihiro; (Fujisawa-shi, JP)
; Tamura; Miki; (Nagareyama-shi, JP) ; Nomura;
Ichiro; (Atsugi-shi, JP) ; Hiroki; Tamayo;
(Zama-shi, JP) ; Matsutani; Shigeki;
(Sagamihara-shi, JP) ; Ueda; Kazuyuki; (Tokyo,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
CANON KABUSHIKI KAISHA |
Tokyo |
|
JP |
|
|
Family ID: |
46940564 |
Appl. No.: |
15/411867 |
Filed: |
January 20, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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14241426 |
Feb 26, 2014 |
9595415 |
|
|
PCT/JP2012/072522 |
Aug 29, 2012 |
|
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15411867 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01J 35/116 20190501;
G01N 23/04 20130101; H01J 35/186 20190501; H01J 35/08 20130101;
H01J 2235/168 20130101; H01J 35/18 20130101; H01J 35/16 20130101;
G01N 23/043 20130101 |
International
Class: |
H01J 35/08 20060101
H01J035/08; H01J 35/18 20060101 H01J035/18; G01N 23/04 20060101
G01N023/04 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 31, 2011 |
JP |
2011-189112 |
Claims
1. An X-ray generator comprising: an anode including an electron
passage formation member having an annular inner wall surface so as
to form an electron passage hole; an integrated target including a
target layer and an insulating substrate supporting the target
layer; and an electron source facing the target layer configured to
irradiate the target layer with electrons passing through the
electron passage hole and radiate a primary X-ray from the target
layer, wherein the target layer is remote from a periphery of the
insulating substrate configured to form an uncovered peripheral
region at where a peripheral region of the substrate is not covered
by the target layer, wherein the electron passage formation member
accommodates a secondary X-ray radiating region at the annular
inner wall surface that radiates a secondary X-ray in response to
irradiation with electrons reflected from the target layer, and
wherein the secondary X-ray radiating region, the target layer and
the uncovered peripheral region are disposed such that both of the
primary X-ray and the secondary X-ray are radiated to an outside of
the X-ray generator.
2. The X-ray generator according to claim 1, wherein the
secondary-X-ray radiating region is shaped so as to cover an above
of the target layer irradiated with the electrons.
3. The X-ray generator according to claim 1, wherein the target
layer reflects 20% to 60% of the irradiated electrons.
4. The X-ray generator according to claim 1, wherein the secondary
X-ray radiating region is located above the uncovered peripheral
region such that the secondary X-ray is radiated through the
uncovered peripheral region to the outside.
5. The X-ray generator according to claim 2, wherein a
cross-sectional area of at least an end of the electron passage
formation member adjacent to the target layer is larger than, and
increases as compared with, an opposite side from the target layer,
and at least part of the annular inner wall surface of the
enlarged-cross-sectional area region serves as the secondary X-ray
radiating region.
6. The X-ray generator according to claim 5, wherein the increase
in the cross-sectional area of at least the end of the electron
passage formation member adjacent to the target layer has a level
difference.
7. The X-ray generator according to claim 5, wherein the increase
in the cross-sectional area of at least the end of the electron
passage formation member adjacent to the target layer is a
continuous increase.
8. The X-ray generator according to claim 5, wherein at least part
of the X-rays generated by irradiation of the secondary X-ray
radiating region with the electrons reflected from the target layer
passes through the target layer or the integrated target.
9. The X-ray generator according to claim 5, wherein the X-rays
radiated to the outside through the peripheral region of the
integrated target irradiated with the electrons are X-rays in which
the X-rays generated by direct irradiation of the integrated target
with the electrons and the X-rays generated by irradiation of the
secondary X-ray radiating region with the electrons reflected from
the target layer are superimposed.
10. The X-ray generator according to claim 1, wherein an
electrically conductive layer connected to the integrated target is
provided at at least part of the periphery of the substrate, the
periphery being not covered with the target layer.
11. The X-ray generator according to claim 10, wherein the
electrically conductive layer is thinner than the target layer.
12. The X-ray generator according to claim 10, wherein the
electrically conductive layer is formed of an element having a mass
smaller than that of the target layer.
13. The X-ray generator according to claim 10, wherein the
electrically conductive layer is provided on part of the periphery
of the substrate, and another part of the periphery of the
substrate is an exposed surface of the substrate.
14. The X-ray generator according to claim 1, wherein the secondary
X-ray radiating region is formed of the same material as that of
the target layer.
15. An X-ray imaging apparatus comprising: the X-ray generator
according to claim 1; an X-ray detector that detects X-rays
generated from the X-ray generator and passing through a subject;
and a control unit that controls the X-ray generator and the X-ray
detector in a cooperative manner.
16. The X-ray generator according to claim 1, wherein, the
peripheral region shows higher transmittance for the secondary
X-rays than a central region of the integrated target.
17. The X-ray generator according to claim 1, wherein an angle
.theta. formed by the secondary-X-ray radiating region and the
target layer has a relation 10.degree.<0<85.degree..
18. An X-ray generator comprising: an anode including an electron
passage formation member having an annular inner wall surface so as
to form an electron passage hole; an integrated target including a
target layer and an insulating substrate supporting the target
layer; and an electron source facing the target layer configured to
irradiate the target layer with electrons passing through the
electron passage hole and radiate a primary X-ray from the target
layer, wherein the target layer is remote from a periphery of the
insulating substrate configured to form an uncovered peripheral
region at where a peripheral region of the substrate is not covered
by the target layer, wherein the electron passage formation member
accommodates a secondary X-ray radiating region at the annular
inner wall surface that radiates a secondary X-ray in response to
irradiation with electrons reflected from the target layer, and
wherein the secondary X-ray radiating region is located above the
uncovered peripheral region such that the secondary X-ray is
radiated through the uncovered peripheral region to an outside of
the X-ray generator.
19. The X-ray generator according to claim 18, wherein the target
layer reflects 20% to 60% of the irradiated electrons.
20. The X-ray generator according to claim 18, wherein a
cross-sectional area of at least an end of the electron passage
formation member adjacent to the target layer is larger than, and
increases as compared with, an opposite side from the target layer,
and at least part of the annular inner wall surface of the
enlarged-cross-sectional area region serves as the secondary X-ray
radiating region.
21. The X-ray generator according to claim 19, wherein the increase
in the cross-sectional area of at least the end of the electron
passage formation member adjacent to the target layer has a level
difference.
22. The X-ray generator according to claim 19, wherein the increase
in the cross-sectional area of at least the end of the electron
passage formation member adjacent to the target layer is a
continuous increase.
23. The X-ray generator according to claim 18, wherein at least
part of the secondary X-ray passes through the target layer.
24. The X-ray generator according to claim 18, wherein the
secondary X-ray radiated to the outside through the uncovered
peripheral region and the primary X-ray radiated to the outside are
superimposed.
25. The X-ray generator according to claim 18, further comprising
an electrically conductive layer electrically connected to the
target layer, wherein the electrically conductive layer is provided
at at least part of the uncovered peripheral region.
26. The X-ray generator according to claim 24, wherein the
electrically conductive layer is thinner than the target layer.
27. The X-ray generator according to claim 24, wherein the
electrically conductive layer is formed of an element having a mass
smaller than that of the target layer.
28. The X-ray generator according to claim 24, wherein the
electrically conductive layer is provided partially on the
uncovered peripheral region.
29. The X-ray generator according to claim 18, wherein the
secondary X-ray radiating region is formed of the same material as
that of the target layer.
30. The X-ray generator according to claim 18, wherein, the
uncovered peripheral region shows higher transmittance for the
secondary X-ray than a covered region of the integrated target,
covered by the target layer.
31. The X-ray generator according to claim 18, wherein an angle
.theta. formed by the secondary-X-ray radiating region and the
target layer has a relation
10.degree.<.theta.<85.degree..
32. An X-ray imaging apparatus comprising: the X-ray generator
according to claim 1; an X-ray detector that detects X-rays
generated from the X-ray generator and passing through a subject;
and a control unit that controls the X-ray generator and the X-ray
detector in a cooperative manner.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation, and claims the benefit,
of U.S. patent application Ser. No. 14/241,426, presently pending
and filed on Feb. 26, 2014, which is a national phase application
of International Patent Application No. PCT/JP2012/072522, filed on
Aug. 29, 2012, which patent(s) and patent applications are hereby
incorporated by reference herein in their entireties, and this
application claims the benefit of, and priority to, Japanese Patent
Application No. 2011-189112, filed Aug. 31, 2011, which application
is hereby incorporated by reference herein in its entirety.
TECHNICAL FIELD
[0002] The present invention relates to a transmission X-ray
generator applicable to X-ray imaging for diagnosis in the medical
field, nondestructive inspection in the field of industrial
equipment, and so on, and to an X-ray imaging apparatus including
the same. Background Art
[0003] The X-ray generation efficiency of transmission X-ray
generators that irradiate a transmission target with electrons to
generate X-rays is generally extremely low.
[0004] When accelerating electrons to high energy and irradiating
the target to generate X-rays, only about 1% or less of the energy
of the colliding electrons becomes X-rays, and the remaining about
99% or more becomes heat. Thus, an increase in X-ray generation
efficiency is required. When electrons collide with the target,
reflected electrons are generated. It is known that the reflected
electrons do not contribute to generation of X-rays for use.
[0005] PTL 1 discloses an X-ray tube whose X-ray generation
efficiency is increased by disposing an anode member having a
conical channel whose opening diameter is decreased from an
electron source toward a target between the electron source and the
target and by elastically scattering the electrons on the channel
surface to let the electrons incident on the target.
[0006] PTL 2 discloses a transmissive X-ray target in which target
metal is formed on a ceramic or glass X-ray transmission window
substrate.
CITATION LIST
Patent Literature
[0007] PTL 1 Japanese Patent Laid-Open No. 9-171788
[0008] PTL 2 Japanese Patent Laid-Open No. 2002-352754
SUMMARY OF INVENTION
Technical Problem
[0009] The technique described in PTL 1 provides a micro-focus
X-ray tube in which the number of electrons incident on the target
is substantially increased. However, the X-ray generation
efficiency of the X-ray tube is not always sufficient to use it for
an X-ray imaging apparatus. The technique described in PTL 2 can
prevent charging-up of the target but does not increase the X-ray
generation efficiency.
Solution to Problem
[0010] To solve the above problems, the present invention provides
an X-ray generator including an electron passage formed by
surrounding the periphery thereof with an electron-passage forming
member; and a target provided on an insulative substrate and
irradiated with electrons that have passed through the electron
passage to generate X-rays, wherein the target is provided at a
central region of the substrate; the electron passage accommodates
a secondary-X-ray generating section that generates X-rays by
irradiation with electrons reflected from the target; the
secondary-X-ray generating section and the target are disposed so
that both of X-rays generated by direct irradiation of the target
with the electrons and X-rays generated by irradiation of the
secondary-X-ray generating section with the electrons reflected
from the target are radiated to the outside; and at least part of
the peripheral region of the substrate, the peripheral region being
not covered by the target, has higher transmittance for the X-rays
generated at the secondary-X-ray generating section than the
central region of the substrate, the central region being covered
with the target.
ADVANTAGEOUS EFFECTS OF INVENTION
[0011] According to some embodiments of the present invention, in
addition to X-rays generated at a transmission target, X-rays
generated due to reflected electrons generated at the transmission
target can be efficiently extracted to the outside. Thus, the X-ray
generation efficiency can be improved, and hence a high-output
transmission X-ray generator suitable for X-ray imaging can be
provided.
BRIEF DESCRIPTION OF DRAWINGS
[0012] FIG. 1A is a schematic diagram showing the configuration of
an X-ray tube according to a first embodiment of the present
invention.
[0013] FIG. 1B is an enlarged view of the vicinity of a target.
FIG. 1C is a plan view of a target unit, as viewed from the target
side.
[0014] FIGS. 2A to 2C are schematic diagrams showing the
relationship between an angle .theta. formed by a secondary-X-ray
generation surface and the target and the radiating direction of
X-rays.
[0015] FIGS. 3A and 3B are diagrams explaining the exit angle
dependency of X-ray intensity.
[0016] FIGS. 4A to 4C are diagrams explaining the collision density
distribution of the reflected electrons.
[0017] FIG. 5A is an enlarged view of the vicinity of the target of
an X-ray tube according to a second embodiment of the present
invention.
[0018] FIG. 5B is an enlarged view of the vicinity of the target of
an X-ray tube according to a third embodiment of the present
invention.
[0019] FIG. 6A is an enlarged view of the vicinity of the target of
an X-ray tube according to a fourth embodiment of the present
invention.
[0020] FIG. 6B is an enlarged view of the vicinity of the target of
an X-ray tube according to a fifth embodiment of the present
invention.
[0021] FIG. 7A is a schematic diagram of another target unit
according to an embodiment of the present invention.
[0022] FIG. 7B is a plan view of the target unit in FIG. 7A.
[0023] FIG. 7C is a schematic diagram of another target unit
according to an embodiment of the present invention.
[0024] FIG. 7D is a plan view of the target unit in FIG. 7C.
[0025] FIG. 8A is a schematic diagram of another target unit
according to an embodiment of the present invention.
[0026] FIG. 8B is a plan view of the target unit in FIG. 8A.
[0027] FIG. 8C is a schematic diagram of another target unit
according to an embodiment of the present invention.
[0028] FIG. 8D is a plan view of the target unit in FIG. 8C.
[0029] FIG. 9A is a schematic diagram of another target unit
according to an embodiment of the present invention.
[0030] FIG. 9B is a plan view of the target unit in FIG. 9A.
[0031] FIG. 9C is a schematic diagram of another target unit
according to an embodiment of the present invention.
[0032] FIG. 9D is a plan view of the target unit in FIG. 9C.
[0033] FIG. 9E is a schematic diagram of another target unit
according to an embodiment of the present invention.
[0034] FIG. 9F is a plan view of the target unit in FIG. 9E.
[0035] FIG. 10 is a block diagram of an X-ray imaging apparatus
according to a sixth embodiment of the present invention.
DESCRIPTION OF EMBODIMENTS
[0036] A target unit of according to embodiments of the present
invention includes a target support substrate (hereinafter referred
to as a substrate) 3 and a transmission target (hereinafter
referred to as a target) 1 placed on the substrate 3.
First Embodiment
[0037] FIG. 1A is a schematic diagram of a transmission X-ray
generating tube (hereinafter referred to as an X-ray tube) 11 of a
first embodiment of the present invention. FIG. 1B is an enlarged
view of the vicinity of the target 1 in FIG. 1A. FIG. 1C is a plan
view of the target unit in
[0038] FIG. 1A, as viewed from the target side.
[0039] A vacuum container 10 is used to maintain the interior of
the X-ray tube 11 under vacuum and is formed of a glass or ceramic
material or the like. The degree of vacuum in the vacuum container
10 is preferably about 10.sup.-4 to 10.sup.-8 Pa. The vacuum
container 10 has an opening, to which an electron-passage forming
member 4 having an electron passage 5 is joined. The substrate 3 is
joined to the inner wall surface of the electron passage 5 to
tightly seal the vacuum container 10.
[0040] An electron emission source 7 is disposed in the vacuum
container 10 so as to face the target 1. The electron emission
source 7 may be a tungsten filament, a hot cathode, such as an
impregnated cathode, or a cold cathode, such as a carbon nanotube.
Electrons 12 emitted from the electron emission source 7 enter at
an end of the electron passage 5 formed in the electron-passage
forming member 4, pass through the electron passage 5, and
irradiate the target 1 provided at the other end of the electron
passage 5 to generate X-rays 14. A voltage Va applied between the
electron emission source 7 and the target 1 is about 40 kV to 150
kV, although depending on the application of the X-rays. A
collimator for limiting the radiation field of X-rays may be
disposed outside the X-ray tube 11.
[0041] The target 1 is disposed in the central region of the
surface of the substrate 3 adjacent to the electron emission source
7 on which an electrically conducting layer 2 is provided. The
electron-passage forming member 4 is disposed between the target 1
and the electron emission source 7, in which the electron passage 5
whose both ends are open is formed by surrounding the periphery
thereof with the electron-passage forming member 4. The
cross-sectional area of at least the end of the electron passage 5
adjacent to the target 1 continuously increases as compared with
the opposite side. The inner wall surface of the
increased-cross-sectional-area region of the electron passage 5
serves as a secondary-X-ray generating section 6. The
secondary-X-ray generating section 6 is hereinafter referred to as
a secondary-X-ray generation surface because it is shaped like a
surface. It is sufficient that at least part of the inner wall
surface of the increased-cross-sectional-area region of the
electron passage 5 serve as the secondary-X-ray generation surface
6. The secondary-X-ray generation surface 6 may either be formed as
part of the inner wall surface of the electron passage 5 or be
formed, in the electron passage 5, of a member different from that
of the electron passage 5.
[0042] With the above configuration, the electrons 12 emitted from
the electron emission source 7 pass through the electron passage 5
and collide with the target 1. Since the accelerated electrons 12
collide with the region of the target 1 irradiated with the
electrons, X-rays 15 are generated. The generated X-rays 15 pass
through the electrically conducting layer 2 and the substrate 3 and
are radiated outside the X-ray tube 11. Although part of the X-rays
15 is attenuated due to self-absorption of the target 1 and also by
the substrate 3 serving also as an X-ray transmission window, the
degree of attenuation is low, and is substantially permissible.
Preferably, the diameter d1 of the target 1 shown in FIGS. 1B and
1C is substantially equal to the diameter of the cross section of
the electrons 12(electron beam). Even if there is a slight
difference therebetween, there is no substantial difference
although the effect is limited.
[0043] When the electrons 12 collide with the target 1, reflected
electrons 13 are generated, as well as the X-rays 15. The reflected
electrons 13 generated at the target 1 collide with the
secondary-X-ray generation surface 6 to generate X-rays 16. At
least part of the generated X-rays 16 (hereinafter also referred to
as secondary X-rays) passes through the substrate 3 and is radiated
outside the X-ray tube 11.
[0044] The reflected electrons 13 amount to 20% to 60% of the
electrons that have collided with the target 1, although depending
on the material, surface state, and so on of the target 1. The
acceleration voltage when the reflected electrons 13 collide with
the secondary-X-ray generation surface 6 is lower than the
acceleration voltage of the electrons 12 emitted by the electron
emission source 7. The degree also depends on the material and
surface state of the target 1, the direction of emission, and so
on. Therefore, the energy of the secondary X-rays (X-rays 16) is
lower than the energy of the X-rays 15. Although the secondary
X-rays are radiated in all directions from the secondary-X-ray
generation surface 6 with which the reflected electrons 13 collide,
using a material that can block the X-rays as the electron-passage
forming member 4 allows most of the secondary X-rays 16 radiated
backwards to be blocked by the inner wall of the electron passage
5. The secondary X-rays 16 radiated forwards can be used for
imaging as are the X-rays 15 because they are radiated through the
target 1.
[0045] Next, a preferable range of an angle .theta. that is formed
by the secondary-X-ray generation surface 6 with the target 1 will
be described. FIGS. 2A to 2C show the X-rays 16 generated at the
secondary-X-ray generation surface 6 after the reflected electrons
13 collide with the secondary-X-ray generation surface 6, showing
the positional relationship between the X-rays 16 generated at any
angle 01 with respect to a perpendicular line of the target 1 and
the components. FIG. 2A shows a case where .theta.>90.degree.,
FIG. 2B shows a case where .theta.=90.degree., and FIG. 2C shows a
case where .theta.<90.degree.. If .theta.>90.degree., as in
FIG. 2A, much of the generated X-rays 16 is absorbed through the
secondary-X-ray generation surface 6, and thus only a little is
radiated to the outside. If .theta.=90.degree., as in FIG. 2B,
about half of the generated X-rays 16 is absorbed in the
secondary-X-ray generation surface 6. If .theta.<90.degree., as
in FIG. 2C, much of the generated X-rays 16 (at least about half or
more) is radiated to the outside without being absorbed. Thus,
setting at .theta.<90.degree., that is, forming the electron
passage 5 whose end adjacent to the target 1 is increased in
cross-sectional area as compared with the end opposite the target 1
reduces the proportion of the generated X-rays 16 absorbed in the
secondary-X-ray generation surface 6, thus increasing the amount of
X-rays 16 extracted.
[0046] A preferable range of the angle .theta. can also be set in
consideration of the exit angle dependency of the X-ray intensity.
FIGS. 3A and 3B are diagrams explaining the exit angle dependency
of the X-ray intensity. FIG. 3A shows a state in which the
reflected electrons 13 are incident on the secondary-X-ray
generation surface 6, and the generated X-rays 16 exit at an exit
angle .phi., and FIG. 3B shows the relationship between the X-ray
exit angle .phi. in FIG. 3A and X-ray intensity. Since the
reflected electrons 13 accelerated to 10 kV to 200 kV enter about a
few .mu.m inside the secondary-X-ray generation surface 6 without
heavily depending on the incident angle, much of the X-rays 16 is
also generated about a few .mu.m inside the secondary-X-ray
generation surface 6. The generated X-rays 16 are radiated at
various angles. If the X-ray exit angle .phi. in FIG. 3A is small,
the distance of passage of the X-rays 16 in the secondary-X-ray
generation surface 6 is long. Therefore, for example, if
.phi.<5.degree., the X-ray intensity rapidly decreases as .phi.
decreases, as shown in FIG. 3B. Accordingly, if the lower limit of
the exit angle .phi. is set to .phi..sub.0 in consideration of the
exit angle dependency of the X-ray intensity, a preferable range of
the angle .theta. is .theta.<90-.phi..sub.1, in addition to the
above-described preferable range. Referring to FIG. 3B, if
.phi..sub.0 is set to 5.degree., .theta.<85.degree. is given.
The lower limit of .theta. is 10.degree.<.theta. in
consideration of a threshold value for causing the electrons 13
reflected by the target 1 to collide with the inner wall surface
with efficiency. Thus, a preferable range of the angle .theta. is
10.degree.<.theta.<85.degree..
[0047] Next, a preferable range of a region where the
secondary-X-ray generation surface 6 is formed will be described
with reference to FIGS. 4A to 4C. Here, a preferable range of the
distance Z between the target 1 and the end of the secondary-X-ray
generation surface 6 remote from the target 1 (a
secondary-X-ray-generation-surface formation distance) will be
described. The preferable range of the distance Z can be set in
consideration of the distribution of the density of the reflected
electrons 13 generated at the target 1 which have reached the
periphery. FIGS. 4A to 4C are diagrams explaining the collision
density distribution of the reflected electrons 13. FIG. 4A is a
schematic diagram for use in calculation; FIG. 4B is a graph
showing the collision density distribution of the reflected
electrons 13 generated due to the incident electrons 12; and FIG.
4C is a diagram showing the integral of the collision density of
the reflected electrons 13. In FIG. 4A, if the width of the opening
perpendicular to the direction z (coordinate) is 2R, most of the
reflected electrons 13, about 80% of all, reaches the peripheral
surface where the distance (coordinate) z is 2R or less. If the
distance z is 4R or less, about 95% of all reaches the peripheral
surface. Accordingly, if the opening width of the electron passage
4 is 2R, preferably, the secondary-X-ray generation surface 5 is
formed at a region where the distance z is at least 2R or less,
more preferably, 4R or less. If the distance z is 20R, the
collision density of the reflected electrons 13 becomes
substantially zero. Accordingly, preferably, the opening width 2R
of the electron-passage forming member 3 and the formation distance
(height) Z of the secondary-X-ray generation surface satisfy the
relation, 2.ltoreq.Z/R.ltoreq.20. More preferably, they satisfy the
relation, 4.ltoreq.Z/R.ltoreq.20.
[0048] In FIG. 1B, although the secondary-X-ray generation surface
6 is formed over the entire surface of the inner wall of the
increased-cross-sectional-area region of the electron passage 5,
the secondary-X-ray generation surface 6 does not necessarily need
to be formed over the entire surface of the inner wall of the
increased-cross-sectional region of the electron passage 5. The
secondary-X-ray generation surface 6 may be formed on a region
including the range of the preferable distance Z.
[0049] The secondary-X-ray generating section 6 and the target 1
are disposed so that both the X-rays 15 generated when the
electrons 12 are radiated directly onto the target 1 and the X-rays
16 generated when electrons 13 reflected by the target 1 irradiates
the secondary-X-ray generating section 6 are radiated to the
outside. The secondary-X-ray generating section 6 may be disposed
over the target 1 so as to cover the surface thereof irradiated
with the electrons 12. The secondary-X-ray generation surface 6 may
either be formed as part of the inner wall surface of the electron
passage 5 or be formed, in the electron passage 5, of a member
different from that of the electron passage 5.
[0050] The target 1 may be formed of a material having a high
melting point and high X-ray generation efficiency. Suitable
examples of such a material are metals with atomic numbers equal to
or greater than 26, such as tungsten, tantalum, and molybdenum. A
preferable thickness of the target 1 is about several .mu.m to
several tens .mu.m to reduce absorption when the generated X-rays
pass through the target 1.
[0051] If the electrically conducting layer 2 is provided merely to
prevent charging-up of the target unit, there is no limitation to
the kind and thickness of the material provided that it has
electrical conductivity. However, since the present invention is
made to provide the electrically conducting layer 2 with the
function of extracting the X-rays generated at the secondary-X-ray
generation surface 6 to the outside, the kind and thickness of the
material have some influence. Generation of X-rays 16 at the
secondary-X-ray generation surface 6, an extraction method for the
X-rays 16, and the kind of the material will be described in detail
below.
[0052] A suitable material for the substrate 3 has a sufficient
strength to support the target 1 and absorbs little X-rays 15 and
16 generated at the target 1 and the secondary-X-ray generation
surface 6. The material may have high thermal conductivity so as to
radiate heat generated in the target 1, such as diamond, silicon
nitride, aluminum, and nitride. An appropriate thickness of the
substrate 3 is about 0.1 mm to several mm. An insulative material
may also be used.
[0053] The secondary-X-ray generation surface 6 may be formed of a
material having a high melting point and high X-ray generation
efficiency. Suitable examples of such a material are metals with
atomic numbers equal to or greater than 26, such as tungsten,
tantalum, and molybdenum. A preferable thickness of the
secondary-X-ray generation surface 6 is larger than the intrusion
length of electrons, preferably, several .mu.m or more. The
material of the secondary-X-ray generation surface 6 may be the
same as of that of the target 1. This is because the X-rays 15
generated when electrons 12 emitted from the electron emitting
portion of the electron emission source 7 collide directly with the
target 1 and the X-rays 16 generated when the electrons 13
reflected from the target 1 collide with the secondary-X-ray
generation surface 6 have the same characteristics.
[0054] A suitable material for the electron-passage forming member
4 can block X-rays. The electron-passage forming member 4 may be
formed of the same material as that of the secondary-X-ray
generation surface 6. In this case, the surface of the
electron-passage forming member 4 serves as the secondary-X-ray
generation surface 6. The material of the electron-passage forming
member 4 may differ from that of the secondary-X-ray generation
surface 6. The material of the electron-passage forming member 4
may have high thermal conductivity so as to quickly radiate heat
generated in the secondary-X-ray generation surface 6, for example,
tungsten, tantalum, molybdenum, copper, silver, gold, and
nickel.
[0055] The electron passage 5 serves, at the side closer to the
electron emission source 7 than the target 1, as a passage for
guiding the electrons 12 to the electron beam irradiation region
(X-ray generation region) of the target 1. Using a material that
can block X-rays as the electron-passage forming member 4 allows
most of the X-rays radiated from the target 1 toward the electron
emission source 7 (rearwards) to be blocked by the inner wall of
the electron passage 5. An X-ray passage can be provided opposite
the electron emission source 7 with respect to the target 1. Using
a material that can block X-rays for the X-ray passage allows
unnecessary X-rays of the X-rays radiated from the target 1 toward
the opposite to the electron emission source 7 (forwards) to be
blocked by the inner wall of the X-ray passage. The electron
passage 5 and the X-ray passage can be integrally formed of the
same material. The shapes of the electron passage 5 and the X-ray
passage may be circular or may be in any form, such as rectangular
and elliptical, as viewed from the electron emission source 7
side.
[0056] The electron-passage forming member 4 and the target unit
can be joined together by brazing or the like. For brazing, it is
important to maintain the interior of the vacuum container 10 under
vacuum. The material of brazing can be selected as appropriate
depending on the material, heatproof temperature, and so on of the
electron-passage forming member 4.
[0057] As shown in FIG. 1B, the target unit has a configuration in
which the electrically conducting layer 2 is provided on the
substrate, and the target 1 is placed on the central region of the
electrically conducting layer 2. In FIGS. 1B and 1C, reference sign
d1 denotes the diameter of the target 1, and d2 denotes the inside
diameter of the electron incident end of the electron passage 5.
The target unit and the electron-passage forming member 4 are
joined together with a brazing material (not shown), so that the
interior of the vacuum container 10 is maintained under vacuum. The
substrate 3 and the electrically conducting layer 2 are also brazed
to the electron-passage forming member 4.
[0058] When the secondary X-rays (X-rays 16) pass through the
target unit, some of them passes through the two layers, that is,
the electrically conducting layer 2 and substrate 3, and some
passes through the three layers, that is, the target 1, the
electrically conducting layer 2, and the substrate 3. The material
and thickness of the target 1 should be optimized depending on the
use conditions to generate X-rays efficiently when the electrons 12
collide therewith. On the other hand, since the electrically
conducting layer 2 generates little X-rays when the electrons 12
collides therewith, only electrical conductivity, which is its
original function, and X-ray transmissivity may be considered.
However, since the energy of the secondary X-rays 16 is smaller
than the energy of the X-rays 15, as described above, if the
material and thickness of the electrically conducting layer 2 are
the same as those of the target 1, the electrically conducting
layer 2 absorbs much X-rays, and hence a sufficient amount of
secondary X-rays 16 cannot be extracted. Considering only the X-ray
transmissivity, it is most desirable to eliminate the electrically
conducting layer 2; however, considering prevention of the
charging-up, described above, a thinnest possible electrically
conducting layer 2 is needed.
[0059] The material having high X-ray transmissivity for the
electrically conducting layer 2 may be a light element, for
example, aluminum, titanium, silicon nitride, silicon, and
graphite. The electrically conducting layer 2 formed of such an
element having a mass smaller than that of the target 1 has only to
have electrical conductivity, and preferably has a thickness of
about 0.1 nm or larger and 1 .mu.m or less. The material of the
electrically conducting layer 2 may be the same as that of the
target 1. If the material of the electrically conducting layer 2 is
the same as that of the target 1, the electrically conducting layer
2 may be thin enough not to substantially hinder the X-rays from
passing therethrough. Even a metal material with an atomic number
equal to or greater than 26, which is generally used as the target
1, can be used as the electrically conducting layer 2 because of
its high X-ray transmittance provided that it is thin. For example,
tungsten with a thickness of about 0.1 nm or more and 0.2 .mu.m or
less blocks slight X-rays, and thus it can be employed as, as well
as a light element. With such a configuration, for the X-rays
(secondary X-rays) 16 generated when the electrons 13 reflected
from the target 1 are incident on the inner wall surface of the
electron passage 5, the transmittance at the central region of the
substrate 3 covered by the target 1 is 30% to 70% of the
transmittance at the peripheral region of the substrate 3 which is
not covered by the target 1.
[0060] In FIG. 1B, although the electrically conducting layer 2 is
provided on the substrate 3, and the target 1 is provided on the
electrically conducting layer 2, they need not be provided in this
order.
[0061] In the case of the target unit in which the target 1 is
provided on the electrically conducting layer 2, it is preferably
that the thickness of the region of the electrically conducting
layer 2 covered by the target 1 be 0.1 nm or more and 0.1 .mu.m or
less. This range of thickness ensures good linearity and output
stability of X-ray radiation. The thickness of the region of the
electrically conducting layer 2 other than the region covered by
the target 1 may not necessarily be within the above range. If the
electrically conducting layer 2 and the target 1 are formed of the
same material, the thickness of the region of the electrically
conducting layer 2 covered by the target 1 need not be within the
above range.
[0062] In the case of a target unit in which the electrically
conducting layer 2 is provided on the target 1, it is preferable
that the thickness of the region of the electrically conducting
layer 2 covering the target 1 be 0.1 nm or more and 0.1 .mu.m or
less. This range of thickness allows the amount of X-rays 15
generated when the electrons 12 collides directly with the
electrically conducting layer 2 to be lower than or equal to an
allowable range. The thickness of the region of the electrically
conducting layer 2 other than the region covering the target 1 need
not be within the above range because electrons 12 do not collide
directly with the electrically conducting layer 2. If the
electrically conducting layer 2 and the target 1 are formed of the
same material, the thickness of the region of the electrically
conducting layer 2 covering the target 1 need not be within the
above range.
[0063] According to this embodiment, the secondary X-rays 16 can be
generated at the secondary-X-ray generation surface 6, and the
peripheral region of the substrate 3, which is not covered by the
target 1, is covered by the electrically conducting layer 2. Thus,
the secondary-X-ray transmissivity at the peripheral region is
higher than that at the central region. This allows the secondary
X-rays 16 generated due to reflected electrons 13 generated at the
target 1, in addition to the X-rays 15 generated at the target 1,
to be efficiently extracted. This can improve the X-ray generation
efficiency.
[0064] Modifications of the configuration of the target unit will
be described hereinbelow. The target 1, the electrically conducting
layer 2, and the substrate 3 can be formed of the materials
described above.
[0065] A target unit shown in FIGS. 7A and 7B has a configuration
in which the target 1 is provided on the central region of the
substrate 3, and the electrically conducting layer 2 is provided on
the region other than the central region of the substrate 3. Since
the peripheral region of the substrate 3, which is not covered by
the target 1 connected to the electrically conducting layer 2, is
covered with the electrically conducting layer 2, the
secondary-X-ray transmissivity of the peripheral region is higher
than that at the central region.
[0066] A target unit shown in FIGS. 7C and 7D has a configuration
in which the target 1 is provided on the central region of the
substrate 3, and the electrically conducting layer 2 is provided on
the region other than the central region of the substrate 3 and on
the target 1. The target 1 is covered with the electrically
conducting layer 2. Since the peripheral region of the substrate 3,
which is not covered by the target 1, is covered with the
electrically conducting layer 2, the secondary-X-ray transmissivity
at the peripheral region is higher than at the central region.
[0067] A target unit shown in FIGS. 8A and 8B has a configuration
in which the target 1 provided on the central region of the
substrate 3, and the electrically conducting layer 2 extending from
the central region to the rim is provided at part of the substrate
3 other than the central region. The target 1 is connected to the
electrically conducting layer 2. The electrically conducting layer
2 is provide on part of the peripheral region of the substrate 3
which is not covered with the target 1, and the other part of the
peripheral region is an exposed surface of the substrate 3. Since
only part of the peripheral region of the substrate 3, which is not
covered with the target 1, is covered with the electrically
conducting layer 2, the secondary-X-ray transmissivity is high at
the peripheral region.
[0068] A target unit shown in FIGS. 8C and 8D has a configuration
in which the target 1 is provided on the central region of the
substrate 3, and the electrically conducting layer 2 is not
provided. In this case, the substrate 3 may have slight electrical
conductivity. If the electrical conductivity is not sufficient, use
conditions or the like may be limited to prevent charging-up. Since
the target 1 is provided on the central region of the substrate 3,
and the electrically conducting layer 2 is not provided, the
secondary-X-ray transmissivity is higher at the peripheral region
of the substrate 3, which is not covered with the target 1.
[0069] A target unit shown in FIGS. 9A and 9B has a configuration
in which the electrically conducting layer 2 is provided on the
central region of the substrate 3, and also the electrically
conducting layer 2 extending from the central region to the rim is
provided on part of the region of the substrate 3 other than the
central region. The target 1 is provided on the part of the
electrically conducting layer 2 located on the central region of
the substrate 3. The electrically conducting layer 2 is provided
only on part of the peripheral region of the substrate 3, which is
not covered with the target 1, and the other part of the peripheral
region is an exposed surface of the substrate 3. Since part of the
peripheral region of the substrate 3, which is not covered with the
target 1, is covered with the electrically conducting layer 2, the
secondary-X-ray transmissivity is high at the peripheral
region.
[0070] A target unit shown in FIGS. 9C and 9D has a configuration
in which the target 1 is provided on the central region of the
substrate 3, and the electrically conducting layer 2 is provided on
the region of the substrate 3 other than the central region and on
the peripheral region of the target 1. Since the peripheral region
of the substrate 3, which is not covered with the target 1, is
covered with the electrically conducting layer 2, the
secondary-X-ray transmissivity is higher at the peripheral region
than at the central region.
[0071] A target unit shown in FIGS. 9E and 9F has a configuration
in which the electrically conducting layer 2 is provided on the
region of substrate 3 other than the central region, and the target
1 is provided on the central region of the substrate 3 and on the
part of the electrically conducting layer 2 around the central
region. Part of the electrically conducting layer 2 is covered with
the target 1. Since the peripheral region of the substrate 3, which
is not covered with the target 1, is covered with the electrically
conducting layer 2, the secondary-X-ray transmissivity is higher at
the peripheral region than at the central region.
Second Embodiment
[0072] This embodiment differs from the first embodiment in the
shapes of the electron-passage forming member 4 and the electron
passage 5 and is the same in commonalities other than the shapes of
the electron-passage forming member 4 and the electron passage 5.
The target unit can be any of the target units described in the
first embodiment.
[0073] FIG. 5A is an enlarged view of the vicinity of the target 1
of this embodiment. The electron passage 5 whose both ends are open
is formed by surrounding the periphery with the electron-passage
forming member 4. The electron passage 5 has an upward convex arc
cross-sectional shape in the direction perpendicular to the target
1 when the target 1 is assumed to be at the lower side.
Furthermore, the inner wall surface of the
enlarged-cross-sectional-area region of the electron passage 5
serves as the secondary-X-ray generation surface 6.
[0074] Since the cross-sectional shape of the secondary-X-ray
generation surface 6 is an upward convex arc shape when the target
1 is assumed to be at the lower side, the X-rays 16 generated at
the secondary-X-ray generation surface 6 are absorbed in the
secondary-X-ray generation surface 6 at a low ratio, so that the
amount of X-rays 16 extracted can be increased.
Third Embodiment
[0075] This embodiment differs from the first embodiment in the
shapes of the electron-passage forming member 4 and the electron
passage 5 and is the same in commonalities other than the shapes of
the electron-passage forming member 4 and the electron passage 5.
The target unit can be any of the target units described in the
first embodiment.
[0076] As shown in FIG. 5B, the electron passage 5 has a downward
convex arc cross-sectional shape in the direction perpendicular to
the target 1 when the target 1 is assumed to be at the lower
side.
[0077] Since the cross-sectional shape of the secondary-X-ray
generation surface 6 is a downward convex arc shape when the target
1 is assumed to be at the lower side, the X-rays 16 generated at
the secondary-X-ray generation surface 6 is absorbed in the
secondary-X-ray generation surface 6 at a low ratio, so that the
amount of X-rays 16 extracted can be increased.
[0078] A preferable range of the area in which the secondary-X-ray
generation surface 6 is formed is the same as that in the first
embodiment.
[0079] The secondary-X-ray generation surface 6 and the target 1
may be disposed such that the secondary-X-ray generation surface 6
whose cross-sectional shape is a downward convex arc shape may be
disposed over the target 1 so as to cover the surface thereof
irradiated with the electrons 12.
Forth Embodiment
[0080] This embodiment differs from the first embodiment in the
shapes of the electron-passage forming member 4 and the electron
passage 5 and is the same in commonalities other than the shapes of
the electron-passage forming member 4 and the electron passage 5.
The target unit can be any of the target units described in the
first embodiment.
[0081] FIG. 6A is an enlarged view of the vicinity of the target 1
of this embodiment. The electron passage 5 whose both ends are open
is formed by surrounding the periphery thereof with the
electron-passage forming member 4. The cross-sectional area of at
least the end of the electron passage 5 adjacent to the target 1
increases as compared with the opposite side to form a level
difference. Furthermore, the inner wall surface of the
enlarged-cross-sectional-area region of the electron passage 5
serves as the secondary-X-ray generation surface 6. It is
sufficient that at least part of the inner wall surface of the
increased-cross-sectional-area region of the electron passage 5
serve as the secondary-X-ray generation surface 6. In this
embodiment, the secondary-X-ray generation surface 6 is constituted
by a secondary-X-ray generation surface 61 parallel to the target 1
and a secondary-X-ray generation surface 62 perpendicular to the
target 1. The secondary-X-ray generation surface 61 need not be
parallel to the target 1, and the secondary-X-ray generation
surface 62 need not be perpendicular to the target 1. The angle
formed by the secondary-X-ray generation surface 61 and the
secondary-X-ray generation surface 62 need not be 90.degree.. The
secondary-X-ray generation surface 6 may either be formed as part
of the inner wall surface of the electron passage 5 or be formed,
in the electron passage 5, of a different member from that of the
electron passage 5.
[0082] Since the secondary-X-ray generation surface 61 is formed
parallel to the target 1, the X-rays 16 generated at the
secondary-X-ray generation surface 61 are absorbed in the
secondary-X-ray generation surface 61 at a low ratio, so that the
amount of X-rays 16 extracted can be increased.
[0083] A preferable range of the region in which the
secondary-X-ray generation surface 6 is formed will be described.
Since the collision density of the reflected electrons 13 becomes
maximum at a location close to the target 1 (Z<1R), as shown in
FIG. 4B, the secondary-X-ray generation surface 61 may be formed
relatively close to the target 1. However, since the
secondary-X-ray generation surface 62 also contributes to
generation of X-rays, distance Z' is determined so that the total
amount of X-rays 16 generated at the secondary-X-ray generation
surface 61 and the secondary-X-ray generation surface 62 becomes
the maximum.
[0084] The secondary-X-ray generation surface 6 and the target 1
may be disposed so that the secondary-X-ray generation surface 61
and the secondary-X-ray generation surface 62 are disposed over the
target 1 so as to cover the surface thereof irradiated with the
electrons 12. Furthermore, the secondary-X-ray generation surface
61, the secondary-X-ray generation surface 62, and the target 1 may
be disposed so that the X-rays 15 that are generated when the
target 1 is directly irradiated with the electrons 12 and the
secondary X-rays 16 can be superposed one on another and can be
extracted to the outside.
Fifth Embodiment
[0085] This embodiment differs from the fourth embodiment in part
of the shapes of the electron-passage forming member 4 and the
electron passage 5 and is the same in commonalities other than the
shapes of the electron-passage forming member 4 and the electron
passage 5. The target unit can be any of the target units described
in the first embodiment.
[0086] FIG. 6B is an enlarged view of the vicinity of the target 1
of this embodiment. The electron passage 5 whose both ends are open
is formed by surrounding the periphery thereof with the
electron-passage forming member 4. The electron passage 5 has a
portion protruding from the inner wall surface of the electron
passage 5 (hereinafter referred to as a protrusion) in an
intermediate portion thereof. The protrusion may be ring-shaped as
viewed from the target 1 side. The protrusion may either be formed
of the same member as that of the electron passage 5 or be formed
of a different member from the electron passage 5. The region of
the electron passage 5 from the end adjacent to the target 1 to the
protrusion serves as the secondary-X-ray generation surface 62, and
the region of the protrusion opposing the target 1 serves as the
secondary-X-ray generation surface 61. The secondary-X-ray
generation surface 6 is constituted by the secondary-X-ray
generation surface 61 and the secondary-X-ray generation surface
62. The secondary-X-ray generation surface 61 need not be parallel
to the target 1, and the secondary-X-ray generation surface 62 need
not be perpendicular to the target 1. The angle formed by the
secondary-X-ray generation surface 61 and the secondary-X-ray
generation surface 62 need not be 90.degree.. The secondary-X-ray
generation surface 6 may either be formed as part of the inner wall
surface of the electron passage 5 or formed, in the electron
passage 5, of a different member from that of the electron passage
5.
[0087] A preferable range of the region in which the
secondary-X-ray generation surface 6 is formed is the same as that
in the fourth embodiment. That is, the secondary-X-ray generation
surface 61 may be formed relatively close to the target 1. However,
since the secondary-X-ray generation surface 62 also contributes to
generation of X-rays, distance Z' is determined so that the total
amount of X-rays 16 generated at the secondary-X-ray generation
surface 61 and the secondary-X-ray generation surface 62 becomes
the maximum.
[0088] The secondary-X-ray generation surface 6 and the target 1
may be disposed so that the secondary-X-ray generation surface 61
and the secondary-X-ray generation surface 62 are disposed over the
target 1 so as to cover the surface thereof irradiated with the
electrons 12. Furthermore, the secondary-X-ray generation surface
61, the secondary-X-ray generation surface 62, and the target 1 may
be disposed so that the X-rays 15 that are generated when the
target 1 is directly irradiated with the electrons 12 and the
secondary X-rays can be superposed on one another and can be
extracted to the outside. With this disposition, the target 1 can
be formed of a material that reflects 20% to 60% of the emitted
electrons 12. Also with this disposition, the secondary-X-ray
generation surface 6 may either be formed as part of the inner wall
surface of the electron passage 5 or be formed, in the electron
passage 5, of a different member from that of the electron passage
5.
[0089] As described above, in any of the foregoing embodiments,
using the target units similar to that in the first embodiment
allows the X-rays 16 generated due to the reflected electrons 13
generated at the target 1, in addition to the X-rays 15 generated
at the target 1, can be efficiently extracted to the outside. Thus,
the X-ray generation efficiency can be improved.
Sixth Embodiment
[0090] FIG. 10 is a block diagram of an X-ray imaging apparatus of
this embodiment.
[0091] First, an X-ray generator 30 equipped with the X-ray tube 11
described in the first to fifth embodiment will be described. The
X-ray generator 30 accommodates the X-ray tube 11 in an envelope
21. The envelope 21 has an X-ray extraction window 22. X-rays
generated from the X-ray tube 11 are radiated outside of the X-ray
generator 30 through the X-ray extraction window 22.
[0092] The remaining space of the envelope 21 accommodating the
X-ray tube 11 may be filled with an insulative medium 24. An
example of the insulative medium 24 may be electrically insulating
oil serving as an insulative medium and a cooling medium for the
X-ray tube 11. Examples of the electrically insulating oil include
mineral oil and silicone oil. Another available example of the
insulative medium 24 includes fluorine electrically insulating
liquid.
[0093] The envelope 21 may accommodate a voltage control unit 23
including a circuit board and an insulation transformer. If the
voltage control unit 23 is provided, for example, a voltage signal
is applied from the voltage control unit 23 to the X-ray tube 11,
so that generation of X-rays can be controlled.
[0094] The X-ray imaging apparatus includes the X-ray generator 30,
an X-ray detector 31, a signal processing unit 32, an apparatus
control unit (hereinafter referred to as a control unit) 33, and a
display 34. The X-ray detector 31 is connected to the control unit
33 via the signal processing unit 32. The control unit 33 is
connected to the display 34 and the voltage control unit 23.
[0095] The control unit 33 controls the X-ray generator 30 and the
X-ray detector 31 in a cooperative manner. X-rays generated from
the X-ray generator 30 are detected by the X-ray detector 31 via a
subject 35, and a fluoroscopic image of the subject 35 is acquired.
The acquired fluoroscopic image is displayed on the display 34. The
control unit 33 controls driving of the X-ray generator 30 and
controls a voltage signal applied to the X-ray tube 11 via the
voltage control unit 23.
[0096] Since this embodiment uses an X-ray generator whose X-ray
generation efficacy is improved, a compact, high-resolution X-ray
imaging apparatus can be provided.
[0097] The present invention will be described in detail below on
the basis of examples and a comparative example.
EXAMPLE 1
[0098] An X-ray generator of this example is the X-ray generator
shown in FIG. 1A and includes the target unit in FIG. 1B and an
anode constituted by the electron-passage forming member 4 having
the electron passage 5 and the secondary-X-ray generation surface
6. First, a 0.1-.mu.m titanium film was formed as the electrically
conducting layer 2 over the entire surface (a surface on which
electrons are to be incident) of a single-crystal diamond substrate
3 having a thickness of 1 mm and a diameter of 5 mm. Next, a
5-.mu.m tungsten layer having a diameter of 1 mm was formed as the
target 1 at the central region of the titanium layer on the diamond
substrate 3 to form the target unit shown in FIG. 1B. Subsequently,
the electron passage 5 having a diameter of 1.5 mm was formed in
the electron-passage forming member 4 formed of tungsten.
Thereafter, the substrate 3 and the electrically conducting layer 2
were brazed to the electron-passage forming member 4 to form the
anode shown in FIG. 1B.
Example 2
[0099] An X-ray generator of this example is an X-ray generator
including the target unit shown in FIG. 7A. This X-ray generator is
the same as in Example 1, except for the target unit. First, a
5-.mu.m tungsten layer having a diameter of 1 mm was formed as the
target 1 at the central region of the surface of the single-crystal
diamond substrate 3 having a thickness of 1 mm and a diameter of 5
mm. Next, a 0.1-.mu.m titanium film was formed as the electrically
conducting layer 2 on the entire surface of the diamond substrate
3, excluding the region where the tungsten layer was formed, to
manufacture the target unit in FIG. 7A. Thereafter, an anode was
formed as in Example 1.
Example 3
[0100] An X-ray generator of this example is an X-ray generator
including the target unit shown in FIG. 7C. This X-ray generator is
the same as in Example 1, except for the target unit. First, a
5-.mu.m tungsten layer having a diameter of 1 mm was formed as the
target 1 at the central region of the surface of a single-crystal
diamond substrate 3 having a thickness of 1 mm and a diameter of 5
mm. Next, a 0.1-.mu.m titanium film was formed as the electrically
conducting layer 2 on the entire surface of the diamond substrate 3
including the region where the tungsten layer was formed to
manufacture the target unit in FIG. 7C. Thereafter, an anode was
formed as in Example 1.
Example 4
[0101] An X-ray generator of this example is an X-ray generator
including the target unit shown in FIG. 7C. This X-ray generator
differs from Example 3 in that tungsten was used as the
electrically conducting layer 2. This example is the same as
Example 1, except for the target unit. First, a 5-.mu.m tungsten
layer having a diameter of 1 mm was formed as the target 1 at the
central region of the surface of the single-crystal diamond
substrate 3 having a thickness of 1 mm and a diameter of 5 mm.
Next, a 0.1-.mu.m tungsten film was formed as the electrically
conducting layer 2 on the entire surface of the diamond substrate 3
including the region where the tungsten layer was formed to
manufacture the target unit in FIG. 7C. Thereafter, an anode was
formed as in Example 1.
Example 5
[0102] An X-ray generator of this example is an X-ray generator
including the target unit shown in FIG. 8A. This example is the
same as Example 1, except for the target unit. First, a 5-.mu.m
tungsten layer having a diameter of 1 mm was formed as the target 1
at the central region of the surface of the single-crystal diamond
substrate 3 having a thickness of 1 mm and a diameter of 5 mm.
Next, a titanium film having a width of 0.3 mm and a thickness of
0.1 .mu.m was formed on the surface of the diamond substrate 3 to
the rim thereof, excluding the region where the tungsten layer was
formed, in contact with the tungsten layer to manufacture the
target unit in FIG. 8A. Thereafter, an anode was formed as in
Example 1.
Example 6
[0103] An X-ray generator of this example is an X-ray generator
including the target unit shown in FIG. 8C. This example is the
same as Example 1, except for the target unit. First, a 5-.mu.m
tungsten layer having a diameter of 1 mm was formed as the target 1
at the central region of the surface of the single-crystal diamond
substrate 3 having a thickness of 1 mm and a diameter of 5 mm to
manufacture the target unit in FIG. 8C. The electrically conducting
layer 2 was not provided. Thereafter, an anode was formed as in
Example 1.
Comparison
[0104] As a comparative example, an X-ray generator including a
target unit in which the target 1 is formed over the entire surface
of the substrate 3. This X-ray generator is the same as in Example
1, except for the target unit. First, a 5-.mu.m tungsten layer was
formed as the target 1 over the entire surface of the
single-crystal diamond substrate 3 having a thickness of 1 mm and a
diameter of 5 mm to manufacture the target unit of the comparative
example. Thereafter, an anode was formed as in Example 1.
Test Procedure
[0105] For comparison, the amounts of X-rays generated by the X-ray
tubes 11 of the X-ray generators manufactured in the above examples
and comparative example were measured by an ionization-chamber-type
survey meter. The X-ray tube 11 was operated at voltages 60 kV and
100 kV, a current of 1 mA, and an operation time of 0.1 second. The
measurement of the amounts of X-rays was performed, with the survey
meter placed at a distance of 1 m from the target unit.
Measurement Results and Evaluation
[0106] Table 1 shows the measurement results of the amounts of
X-rays extracted from the X-ray tube 11 in the above examples and
comparative example according to the test procedure. Table 1 shows
values of the amounts of X-rays at 60 kV and 100 kV in Examples 1
to 6 on the assumption that the amounts of X-rays at 60 kV and 100
kV in the comparative example are 100. The amounts of X-rays at 60
kV in Examples 1 to 6 are 114 to 118, and the amounts of X-rays at
100 kV in Examples 1 to 6 are 108 to 110. In any of Examples 1 to
6, a larger amount of X-rays can be obtained than that in the
comparative example. The reason why the applied voltage of 60 kV
provides a larger amount of X-rays than that at 100 kV may be that,
the amount of X-rays absorbed is decreased by eliminating or
decreasing the thickness of the film on a region other than a
region directly irradiated with electron beams because the energy
of the X-rays is low.
TABLE-US-00001 TABLE 1 60 kV 100 kv Example 1 115 108 Example 2 115
108 Example 3 116 109 Example 4 114 108 Example 5 118 110 Example 6
118 110 Comparative example 100 100
[0107] While the present invention has been described with
reference to exemplary embodiments, it is to be understood that the
invention is not limited to the disclosed exemplary embodiments.
The scope of the following claims is to be accorded the broadest
interpretation so as to encompass all such modifications and
equivalent structures and functions.
REFERENCE SIGNS LIST
[0108] 1 target [0109] 2 electrically conducting layer [0110] 3
substrate [0111] 4 electron-passage forming member [0112] 5
electron passage [0113] 6, 61, 62 secondary-X-ray generating
section [0114] 14 to 16 X-rays [0115] 30 X-ray generator
* * * * *