U.S. patent application number 15/398821 was filed with the patent office on 2017-04-27 for vapor deposition apparatus.
The applicant listed for this patent is SAMSUNG DISPLAY CO., LTD.. Invention is credited to Myung-Soo HUH, Jae-Hyun KIM.
Application Number | 20170117473 15/398821 |
Document ID | / |
Family ID | 51789561 |
Filed Date | 2017-04-27 |
United States Patent
Application |
20170117473 |
Kind Code |
A1 |
KIM; Jae-Hyun ; et
al. |
April 27, 2017 |
VAPOR DEPOSITION APPARATUS
Abstract
A vapor deposition apparatus for forming a deposition layer on a
substrate includes a supply unit that is supplied with a first raw
gas to form the deposition layer and an auxiliary gas, wherein the
auxiliary gas does not constitute a raw material to form the
deposition layer, a reaction space that is connected to the supply
unit to be supplied with the first raw gas and the auxiliary gas, a
plasma generator in the reaction space to convert at least a
portion of the first raw gas into a radical form, and a first
injection portion that is connected to the reaction space and that
supplies at least a radical material of the first raw gas toward
the substrate.
Inventors: |
KIM; Jae-Hyun; (Yongin-si,
KR) ; HUH; Myung-Soo; (Yongin-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG DISPLAY CO., LTD. |
Yongin-si |
|
KR |
|
|
Family ID: |
51789561 |
Appl. No.: |
15/398821 |
Filed: |
January 5, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14250697 |
Apr 11, 2014 |
9543518 |
|
|
15398821 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C23C 16/45551 20130101;
H01L 51/0008 20130101; C23C 16/45542 20130101; C23C 16/513
20130101; C23C 16/403 20130101; H01L 51/56 20130101 |
International
Class: |
H01L 51/00 20060101
H01L051/00; C23C 16/513 20060101 C23C016/513; H01L 51/56 20060101
H01L051/56 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 25, 2013 |
KR |
10-2013-0046211 |
Claims
1. A vapor deposition apparatus for forming a deposition layer on a
substrate, the vapor deposition apparatus comprising: a supply unit
that is supplied with a first raw gas to form the deposition layer
and with an auxiliary gas; a reaction space that is connected to
the supply unit to be supplied with the first raw gas and the
auxiliary gas; a plasma generator in the reaction space to convert
at least a portion of the first raw gas into a radical form; and a
first injection portion that is connected to the reaction space and
that supplies at least a radical material of the first raw gas
toward the substrate.
2. The vapor deposition apparatus as claimed in claim 1, wherein
the auxiliary gas includes He or Ne.
3. The vapor deposition apparatus as claimed in claim 1, wherein
the plasma generator has an electrode form.
4. The vapor deposition apparatus as claimed in claim 1, wherein
the plasma generator has a pillar shape.
5. The vapor deposition apparatus as claimed in claim 1, wherein a
connecting passage is between the reaction space and the first
injection portion, the connecting passage having a narrower width
than the reaction space and the first injection portion.
6. The vapor deposition apparatus as claimed in claim 1, wherein
the substrate and the vapor deposition apparatus are movable
relative to each other.
7. The vapor deposition apparatus as claimed in claim 1, further
comprising a second injection portion that is adjacent to and
spaced apart from the first injection portion.
8. The vapor deposition apparatus as claimed in claim 7, wherein
the second injection portion injects a second raw material toward
the substrate to form another deposition layer.
9. The vapor deposition apparatus as claimed in claim 7, further
comprising a plurality of purge portions between the first and
second injection portions and adjacent to the first and second
injection portions.
10. The vapor deposition apparatus as claimed in claim 9, wherein
the purge portions supply a purge gas including an inactive gas
toward the substrate.
11. The vapor deposition apparatus as claimed in claim 10, wherein
the purge gas includes He or Ne.
12. The vapor deposition apparatus as claimed in claim 9, further
comprising a plurality of exhaust portions adjacent to the first
injection portion, the second injection portion, and the purge
portions.
13. The vapor deposition apparatus as claimed in claim 12, wherein
the plurality of exhaust portions are between the first injection
portion and the purge portions and between the second injection
portion and the purge portions.
14.-20. (canceled)
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This is a divisional application based on pending
application Ser. No. 14/250,697, filed Apr. 11, 2014, the entire
contents of which is hereby incorporated by reference.
[0002] Korean Patent Application No. 10-2013-0046211, filed on Apr.
25, 2013, in the Korean Intellectual Property Office, and entitled:
"Vapor Deposition Apparatus, Deposition Method Using the Same, and
Method of Manufacturing Organic Light Emitting Display Apparatus,"
is incorporated by reference herein in its entirety.
BACKGROUND
[0003] 1. Field
[0004] Embodiments relate to a vapor deposition apparatus and a
method of manufacturing an organic light-emitting display
apparatus.
[0005] 2. Description of the Related Art
[0006] A semiconductor device, a display apparatus, other
electronic devices, or the like includes a plurality of thin films.
The plurality of thin films may be formed by using various methods,
such as a vapor deposition method.
[0007] Among display apparatuses, an organic light-emitting display
apparatus has wide viewing angles, high contrast, and fast response
speeds and thus has received attention as a next generation display
apparatus.
[0008] The organic light-emitting display apparatus includes an
intermediate layer between opposite first and second electrodes,
and one or more various types of thin films, wherein the
intermediate layer includes an organic emission layer. A deposition
process may be used to form the thin films of the organic
light-emitting display apparatus.
SUMMARY
[0009] Embodiments are directed to a vapor deposition apparatus for
forming a deposition layer on a substrate, the vapor deposition
apparatus including a supply unit that is supplied with a first raw
gas to form the deposition layer and with an auxiliary gas, a
reaction space that is connected to the supply unit to be supplied
with the first raw gas and the auxiliary gas, a plasma generator in
the reaction space to convert at least a portion of the first raw
gas into a radical form, and a first injection portion that is
connected to the reaction space and that supplies at least a
radical material of the first raw gas toward the substrate.
[0010] The auxiliary gas may include He or Ne.
[0011] The plasma generator may have an electrode form.
[0012] The plasma generator may have a pillar shape.
[0013] A connecting passage may be between the reaction space and
the first injection portion, the connecting passage having a
narrower width than the reaction space and the first injection
portion.
[0014] The substrate and the vapor deposition apparatus may be
movable relative to each other.
[0015] The vapor deposition apparatus may further include a second
injection portion that is adjacent to and spaced apart from the
first injection portion.
[0016] The second injection portion may inject a second raw
material toward the substrate to form another deposition layer.
[0017] The vapor deposition apparatus may further include a
plurality of purge portions between the first and second injection
portions and adjacent to the first and second injection
portions.
[0018] The purge portions may supply a purge gas including an
inactive gas toward the substrate.
[0019] The purge gas may include He or Ne.
[0020] The vapor deposition apparatus may further include a
plurality of exhaust portions adjacent to the first injection
portion, the second injection portion, and the purge portions.
[0021] The plurality of exhaust portions may be between the first
injection portion and the purge portions and between the second
injection portion and the purge portions.
[0022] Embodiments are also directed to a deposition method for
forming a deposition layer on a substrate, including supplying a
first raw gas to form the deposition layer and an auxiliary gas
from a supply unit to a reaction space, generating plasma by
operating a plasma generator disposed in the reaction space to
convert at least a portion of the first raw gas into a first raw
material having a radical form, and supplying the first raw
material to the substrate.
[0023] The auxiliary gas may include He or Ne.
[0024] The deposition method may further include injecting a purge
gas including He or Ne toward the substrate through an area spaced
apart from the reaction space.
[0025] Embodiments are also directed to a method of manufacturing
an organic light-emitting display apparatus including a substrate,
a first electrode, an intermediate layer including an organic
emission layer, a second electrode, and an encapsulation layer by
operating a vapor deposition apparatus. The method includes forming
at least one thin film of the organic light-emitting display
apparatus, forming the at least one thin film include positioning
the substrate such that the substrate corresponds to the vapor
deposition apparatus, supplying a first raw gas for forming a
deposition layer and an auxiliary gas from a supply unit of the
vapor deposition apparatus to a reaction space, generating plasma
by operating a plasma generator disposed in the reaction space to
convert at least a portion of the first raw gas into a first raw
material having a radical form, and supplying the first raw
material to the substrate.
[0026] Forming of thin film of the organic light-emitting display
apparatus may include forming the encapsulation layer disposed on
the second electrode.
[0027] Forming the thin film of the organic light-emitting display
apparatus may include forming an insulating layer.
[0028] Forming the thin film of the organic light-emitting display
apparatus may include forming a conductive layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0029] Features will become apparent to those of skill in the art
by describing in detail exemplary embodiments with reference to the
attached drawings in which:
[0030] FIG. 1 illustrates a schematic cross-sectional view
depicting a vapor deposition apparatus according to an exemplary
embodiment;
[0031] FIG. 2 illustrates a schematic plan view depicting a vapor
deposition apparatus according to another exemplary embodiment;
[0032] FIG. 3 illustrates a schematic plan view depicting a vapor
deposition apparatus according to another exemplary embodiment;
[0033] FIG. 4 illustrates a schematic plan view depicting a vapor
deposition apparatus according to another exemplary embodiment;
[0034] FIG. 5 illustrates a schematic cross-sectional view
depicting an organic light-emitting display apparatus manufactured
by a method of manufacturing an organic light-emitting display
apparatus according to an exemplary embodiment; and
[0035] FIG. 6 illustrates an enlarged view of a portion F of FIG.
5.
DETAILED DESCRIPTION
[0036] Example embodiments will now be described more fully
hereinafter with reference to the accompanying drawings; however,
they may be embodied in different forms and should not be construed
as limited to the embodiments set forth herein. Rather, these
embodiments are provided so that this disclosure will be thorough
and complete, and will fully convey exemplary implementations to
those skilled in the art.
[0037] In the drawing figures, the dimensions of layers and regions
may be exaggerated for clarity of illustration. Like reference
numerals refer to like elements throughout.
[0038] FIG. 1 illustrates a schematic cross-sectional view
depicting a vapor deposition apparatus 100 according to an
exemplary embodiment.
[0039] Referring to FIG. 1, the vapor deposition apparatus 100 may
include a housing 101, a supply unit 101a, a plasma generator 111,
a reaction space 103, and an injection portion 142.
[0040] The housing 101 may be formed of a durable material to
maintain a whole shape and an external appearance of the vapor
deposition apparatus 100. The housing 101 may be formed in various
shapes such as, for example, in a similar shape to a rectangular
parallelepiped.
[0041] The supply unit 101a is disposed to be connected to the
housing 101. For example, the supply unit 101a may be disposed in
an upper surface of the housing 101 and may have a via hole shape
to supply one or more raw gases. The number of supply units 101a
may be variously determined according to a size of a material with
which a deposition process is performed and which is to be
deposited. The supply unit 101a is supplied with a raw gas and an
auxiliary gas and transmits the raw gas and the auxiliary gas to
the reaction space 103. The raw gas may be a gas including oxygen,
for example, H.sub.2O, O.sub.2, N.sub.2O, or the like. The
auxiliary gas may be He or Ne, as examples.
[0042] The plasma generator 111 is disposed in the housing 101 and
may be in a form of an electrode that is supplied with a voltage.
The plasma generator 111 may have a pillar shape. For example, the
plasma generator 111 may have a shape of a cylinder.
[0043] A facing surface 115 may face the reaction space 103 and the
plasma generator 111. In other implementations, the facing surface
115 may have an electrode shape corresponding to the plasma
generator 111. The facing surface 115 may be a ground
electrode.
[0044] Plasma may be generated in a space between the plasma
generator 111 and the facing surface 115, i.e., in the reaction
space 103 that will be described below. The raw gas flowing in
through the supply unit 101a may be converted into a radical form
in the space between the plasma generator 111 and the facing
surface 115 to improve a deposition characteristic.
[0045] The reaction space 103 may be formed in the housing 101 and
may be connected to the supply unit 101a. The reaction space 103
may be defined as the space between the plasma generator 111 and
the facing surface 115.
[0046] The injection portion 142 may be formed to be connected to
the reaction space 103. The raw gas flowing in through the supply
unit 101a may be converted into the radical form in the reaction
space 103, transmitted to the injection portion 142, and supplied
from the injection portion 142 to a substrate S on which deposition
is performed. Thereby, a deposition process may be performed with
respect to a surface of the substrate S. The injection portion 142
may connected to the reaction space 103 through a connecting
passage 141. The connecting passage 141 may have a narrower width
than the injection portion 142 and the reaction space 103.
[0047] The raw gas may be induced to sufficiently stay in the
reaction space 103 in order to increase an amount of conversion of
the raw gas into the radical form of the raw gas, such that a
deposition raw material may be effectively transmitted to the
injection portion 142.
[0048] A deposition method using the vapor deposition apparatus 100
will now be described.
[0049] When the substrate S on which deposition is to be performed
is disposed to correspond to the injection portion 142 of the vapor
deposition apparatus 100, the deposition process is performed with
respect to the substrate S. The term "correspond to the injection
portion" refers to the substrate S being located such that at least
a portion of the substrate S is in a suitable position for
receiving the deposition raw material from the injection portion.
The substrate S may have a size such that only a portion of the
substrate S may correspond to the injection portion at a time. The
substrate S and the vapor deposition apparatus 100 may move
relative to each other so as to perform the deposition process over
the entire substrate over time. The substrate S may move in an X
axis direction of FIG. 1 so as to continuously perform the
deposition process. In other implementations, the vapor deposition
apparatus 100 may move or the deposition process may be performed
when the substrate S and the vapor deposition apparatus 100 do not
move.
[0050] One or more raw gases and auxiliary gases may flow into the
reaction space 103 through the supply unit 101a. The plasma may be
generated in the reaction space 103 by the plasma generator 111,
and at least a portion of the raw gas flowing into the reaction
space 103 may be converted into a radical form. A raw material
having a radical form may reach the substrate S to form a deposited
layer including the raw material.
[0051] The auxiliary gas supplied with the raw gas through the
supply unit 101a may collide with the raw gas in the reaction space
103 to improve a conversion rate of the raw gas into a radical
form.
[0052] The auxiliary gas may include He. He has high first
ionization energy that is 24.59 eV. Damage to an upper surface of
the substrate S or a thin film pre-formed on the upper surface of
the substrate S that could be caused by a collision with He ionized
in the reaction space 103 may be prevented or reduced. The high
ionization energy of He may prevent the ionization rate of He from
excessively increasing in the reaction space 103.
[0053] He has a low molecular weight of 4.0026. Accordingly, the
auxiliary gas including He increases an effect of preventing damage
to the upper surface of the substrate S or the thin film pre-formed
on the upper surface of the substrate S due to the collision with
He.
[0054] Also, if a gas including oxygen, for example, N.sub.2O, is
used as a raw gas, oxygen ions generated through a generation of
plasma in the reaction space 103 or oxygen having a radical form
could abnormally accelerate, advance toward the substrate S, and
collide with the upper surface of the substrate S or the thin film
pre-formed on the upper surface of the substrate S, thereby
damaging the upper surface of the substrate S or the thin film.
However, in the present exemplary embodiment, the auxiliary gas, in
particular, the auxiliary gas including He, may collide with oxygen
ions or oxygen having a radical form to prevent the oxygen ions or
the oxygen from abnormally accelerating. Therefore, damage to the
upper surface of the substrate S or the thin film pre-formed on the
upper surface of the substrate S may be prevented or reduced, and a
characteristic of a deposited layer to be formed may be
subsequently improved through the raw gas.
[0055] FIG. 2 illustrates a schematic plan view depicting a vapor
deposition apparatus 200 according to another exemplary
embodiment.
[0056] Referring to FIG. 2, the vapor deposition apparatus 200 may
include a housing 201, a supply unit 201a, a plasma generator 211,
a reaction space 203, a first injection portion 242, and a second
injection portion 250.
[0057] The housing 201 may be formed of a durable material to
maintain a whole shape and an external appearance of the vapor
deposition apparatus 200. The housing 201 may be formed in various
shapes, for example, in a similar shape to a rectangular
parallelepiped.
[0058] The supply unit 201a may be disposed to be connected to the
housing 201. For example, the supply unit 201a may be disposed in
an upper surface of the housing 201 and may be shaped as a via hole
to supply one or more raw gases. The number of supply units 201a
may be variously determined according to a size of a substrate S
with respect to which a deposition process is performed to deposit
a layer. The supply unit 201a may be supplied with a first raw gas
and an auxiliary gas and may transmit the first raw gas and the
auxiliary gas to the reaction space 203. The first raw gas may be a
gas including oxygen, for example, e H.sub.2O, O.sub.2, N.sub.2O,
or the like. The auxiliary gas may be He.
[0059] The plasma generator 211 may be disposed in the housing 201
and may be in a form of an electrode that is supplied with a
voltage. The plasma generator 211 may have a pillar shape. For
example, the plasma generator 211 may have a shape of a
cylinder.
[0060] A facing surface 215 may face the reaction space 203 and the
plasma generator 211. In other implementations, the facing surface
215 may have an electrode form corresponding to the plasma
generator 211. The facing surface 215 may be a ground
electrode.
[0061] Plasma may be generated in a space between the plasma
generator 211 and the facing surface 215, i.e., in the reaction
space 203 that will be described below. The first raw gas flowing
in through the supply unit 201a may be converted into a radical
form in the space between the plasma generator 211 and the facing
surface 215 to improve a deposition characteristic.
[0062] The reaction space 203 may be formed in the housing 201 and
may be connected to the supply unit 201a. The reaction space 203
may be defined as the space between the plasma generator 211 and
the facing surface 215.
[0063] The first injection portion 242 may be formed to be
connected to the reaction space 203. The first raw gas flowing in
through the supply unit 201a may be converted into the radical form
in the reaction space 203, transmitted to the first injection
portion 242, and supplied from the first injection portion 242 to
the substrate S on which deposition is performed. Thereby, the
deposition process may be performed with respect to a surface of
the substrate S. The first injection portion 242 may be connected
to the reaction space 203 through a connecting passage 241. The
connecting passage 241 may have a narrower width than the first
injection portion 242 and the reaction space 203.
[0064] The raw gas may be induced to sufficiently stay in the
reaction space 203 in order to increase an amount of conversion of
the raw gas into a radical form such that a deposition raw material
may be effectively transmitted to the first injection portion
242.
[0065] The second injection portion 250 may be formed to be
adjacent to the first injection portion 242. The second injection
portion 250 may be spaced apart from the first injection portion
242. The second injection portion 250 may have a same structure as
the first injection portion or may have a different structure.
[0066] The second injection portion 250 may inject a second raw
material, which is to be deposited on the substrate S, toward the
substrate S. For this purpose, the second injection portion 250 may
be formed to be supplied with the second raw material.
[0067] A deposition method using the vapor deposition apparatus 200
of the present exemplary embodiment will now be described in
brief.
[0068] When the substrate S on which deposition is to be performed
is disposed to correspond to the second injection portion 250 of
the vapor deposition apparatus 200, the second injection portion
250 may inject the second raw material, for example, the second raw
material that is in a gaseous state, toward the substrate S.
[0069] If the substrate S moves in the X axis direction of FIG. 4,
i.e., in a direction indicated by an arrow, to be disposed so as to
correspond to the first injection portion 242, the first raw gas
may flow into the reaction space 203. The substrate S and the vapor
deposition apparatus 200 may move relative to each other to perform
the deposition process. The substrate S may move in the X axis
direction of FIG. 2 so as to continuously perform the deposition
process. In other implementations, the vapor deposition apparatus
200 may move or the substrate S and the vapor deposition apparatus
200 may remain stationary while performing the deposition
process.
[0070] In detail, one or more first raw gases and an auxiliary gas
may flow into the reaction space 203 through the supply unit 201a.
Plasma may be generated in the reaction space 203 by the plasma
generator 211, and at least a portion of the first raw gas flowing
into the reaction space 203 may be converted into a radical form. A
raw material having a radical form may reach the substrate S to
form a deposition layer including the raw material.
[0071] The auxiliary gas supplied along with the first raw gas
through the supply unit 201a may collide with the first raw gas in
the reaction space 203 to improve a conversion rate of the first
raw gas into the radical form.
[0072] In particular, the auxiliary gas may include He. He has an
ionization energy of 24.59 eV. An ionization rate of He may be
prevented from excessively increasing in the reaction space 203 due
to the high energy required for ionization of He. Accordingly,
collisions of ionized He ionized in the reaction space 203 with the
upper surface of the substrate S or the thin film pre-formed on the
upper surface of the substrate S, and consequent damage to the
upper surface of the substrate S or the thin film may be prevented
or hindered.
[0073] He has a relatively low molecular weight of 4.0026. Even if
the auxiliary gas including He were to collide with the upper
surface of the substrate S or the thin film, an amount of shock
thereof may be reduced.
[0074] If a gas, including oxygen, for example, N.sub.2O, is used
as a first raw gas, oxygen ions generated by generating plasma in
the reaction space 203 or oxygen having a radical form could
abnormally accelerate, advance toward the substrate S, and collide
with the upper surface of the substrate S or the thin film, thereby
damaging the upper surface or the thin film. However, in the
present exemplary embodiment, the auxiliary gas, in particular, the
auxiliary gas including He, may be prevented from colliding with
oxygen ions or oxygen having a radical form, and thus, from
abnormally accelerating. Damage to the upper surface of the
substrate S or the thin film may be prevented or reduced, and a
characteristic of a deposition layer, which will be subsequently
formed through the first raw gas, may be improved.
[0075] FIG. 3 illustrates a schematic plan view depicting a vapor
deposition apparatus 300 according to another exemplary
embodiment.
[0076] Referring to FIG. 3, the vapor deposition apparatus 300 may
include a housing 301, a supply unit 301a, a plasma generator 311,
a reaction space 303, a first injection portion 342, a second
injection portion 350, a plurality of purge portions 360-1, 360-2,
and 360-3, and a plurality of exhaust portions 370-1, 370-2, . . .
, 370-5, and 370-6.
[0077] The housing 301 may be formed of a durable material to
maintain a whole shape and an external appearance of the vapor
deposition apparatus 300. The housing 301 may be formed in various
shapes, for example, in a similar shape to a rectangular
parallelepiped.
[0078] The supply unit 301a may be disposed to be connected to the
housing 301. For example, the supply unit 301a may be disposed in
an upper surface of the housing 301 and may be shaped as a via hole
to supply one or more raw gases. The number of supply units 301a
may be variously determined according to a size of a substrate S
with respect to which a deposition process is to be performed and
on which a layer is to be deposited. The supply unit 301a may be
supplied with a first raw gas and an auxiliary gas and may transmit
the first raw gas and the auxiliary gas to the reaction space 303.
The first raw gas may be a gas including oxygen, for example,
H.sub.2O, O.sub.2, N.sub.2O, or the like. The auxiliary gas may be
He.
[0079] The plasma generator 311 may be disposed in the housing 301
and may be in a form of an electrode that is supplied with a
voltage. The plasma generator 311 may have a pillar shape. For
example, the plasma generator 311 may have a shape of a
cylinder.
[0080] A facing surface 315 may face the reaction space 303 and the
plasma generator 311. In other implementations, the facing surface
315 may have an electrode form facing the plasma generator 311. The
facing surface 315 may be a ground electrode.
[0081] Plasma may be generated in a space between the plasma
generator 311 and the facing surface 315, i.e., in the reaction
space 303 that will be described below. The first raw gas flowing
in through the supply unit 301a may be converted into a radical
form in the space between the plasma generator 311 and the facing
surface 115 to improve a deposition characteristic.
[0082] The reaction space 303 may be formed in the housing 301 and
may be connected to the supply unit 301a. The reaction space 303
may be defined as the space between the plasma generator 311 and
the facing surface 315.
[0083] The first injection portion 342 may be formed to be
connected to the reaction space 303. The first raw gas flowing in
through the supply unit 301a may be converted into the radical form
in the reaction space 303, transmitted to the first injection
portion 342, and supplied from the first injection portion 342 to
the substrate S. Thereby, a deposition process may be performed
with respect to a surface of the substrate S. The first injection
portion 342 is connected to the reaction space 303 through a
connecting passage 341, and the connecting passage 341 may have a
narrower width than the first injection portion 342 and the
reaction space 303.
[0084] The raw gas may be induced to sufficiently stay in the
reaction space 303 to improve a conversion rate of the raw gas into
a radical form such that the deposition raw material may be
effectively transmitted to the first injection portion 342.
[0085] The second injection portion 350 is formed to be adjacent to
the first injection portion 342. The second injection portion 350
may also be spaced apart from the first injection portion 342.
[0086] The second injection portion 350 may inject a second raw
material, which is to be deposited on the substrate S, toward the
substrate S. For this purpose, the second injection portion 350 may
be formed to be supplied with the second raw material.
[0087] The plurality of purge portions 360-1, 360-2, and 360-3 may
be disposed to be respectively adjacent to the first injection
portion 342 and the second injection portion 350.
[0088] The purge portion 360-2 may be disposed between the first
injection portion 342 and the second injection portion 350. The
purge portion 360-1 may be disposed to be adjacent to the second
injection portion 350. The purge portion 360-3 may be disposed to
be adjacent to the first injection portion 342.
[0089] The plurality of purge portions 360-1, 360-2, and 360-3
inject a purge gas including an inactive gas toward the substrate
S. For example, the plurality of purge portions 360-1, 360-2, and
360-3 may inject gases such as Ar, He, Ne, etc., as a purge
gas.
[0090] For example, the plurality of purge portions 360-1, 360-2,
and 360-3 may use He or Ne as the purge gas. He and Ne have a
smaller molecular weight than Ar. When the purge gas collides with
the substrate S, damage to the substrate S by the purge gas may be
reduced or prevented. He and Ne respectively have first ionization
energies of 24.59 eV and 21.56 eV that are higher than first
ionization energy of Ar that is 15.76 eV. Therefore, if a purge gas
including He or Ne is used, the ionization of the purge gas may be
decreased to prevent the upper surface of the substrate S or the
thin film pre-formed on the upper surface of the substrate S from
being damaged and contaminated.
[0091] Although the purge gas including He or Ne flows around the
first injection portion 342, the ionization of purge gas may be
decreased to prevent the upper surface of the S or the thin film
from being damaged and contaminated.
[0092] The plurality of exhaust portions 370-1, 370-2, . . . ,
370-5, and 370-6 may be disposed to be respectively adjacent to the
first injection portion 342, the second injection portion 350, and
the plurality of purge portions 360-1, 360-2, and 360-3.
[0093] The first injection portion 342, the second injection
portion 350, and the plurality of purge portions 360-1, 360-2, and
360-3 may not be directly adjacent to one another but may be
adjacent to one another such that at least one of the plurality of
exhaust portions 370-1, 370-2, . . . , 370-5, and 370-6 is
interposed between the first injection portion 342, the second
injection portion 350, and the plurality of purge portions 360-1,
360-2, and 360-3.
[0094] A deposition method using the vapor deposition apparatus 300
of the present exemplary embodiment will now be described in brief.
A method of forming Al.sub.xO.sub.y on the substrate S by using the
vapor deposition apparatus 300 will be described as a detailed
example.
[0095] When the substrate S is disposed to correspond to the second
injection portion 350 of the vapor deposition apparatus 300, a
second raw material, for example, a gas including an Al atom, such
as trimethyl aluminum (TMA) in a gaseous state, may be transmitted
from the second injection portion 350 toward the substrate S. An
adsorption layer including Al may be formed on the upper surface of
the substrate S. In detail, a chemical adsorption layer and a
physical adsorption layer may be formed on the upper surface of the
substrate S.
[0096] The physical adsorption layer, which is formed on the upper
surface of the substrate S and has a weak intermolecular cohesion,
may be separated from the substrate S by the purge gas injected
into the purge portion 360-2 and effectively removed from the
substrate S through pumping of the exhaust portions 370-2 and
370-3, thereby improving purity of a deposition layer that is to be
finally formed on the substrate S.
[0097] When the substrate S is disposed to correspond to the first
injection portion 342 of the vapor deposition apparatus 300, one or
more first raw gases and an auxiliary gas may flow into the
reaction space 303 through the supply unit 301a. In detail, the
first raw gas may include oxygen, and may be, for example,
H.sub.2O, O.sub.2, N.sub.2O, or the like.
[0098] Plasma may be generated in the reaction space 303 by the
plasma generator 311, and at least a portion of the first raw gas
flowing into the reaction space 303 may be converted into a radical
form. A material of the first raw gas converted into the radical
form, i.e., a first raw material, may reach the substrate S to form
a deposition layer including the first raw material.
[0099] The first raw material may react with a chemical adsorption
layer formed of the second raw material that has been adsorbed on
the substrate S or may replace a portion of the chemical adsorption
layer, thereby finally forming Al.sub.xO.sub.y as a desired
deposition layer on the substrate S. An excess of the first raw
material may form a physical adsorption layer and may remain on the
substrate S.
[0100] The purge gas may be injected from the purge portion 360-2
or 360-3 toward the substrate S to separate the physical adsorption
layer of the first raw material remaining on the substrate S from
the substrate S. The purge gas may be effectively removed from the
substrate S through pumping of the exhaust portions 370-4 and 370-5
to improve the purity of a deposition layer that is to be finally
formed on the substrate S.
[0101] As a result, a deposition layer, including the first and
second raw materials, may be formed on the substrate S. IA single
atomic layer, including Al.sub.xO.sub.y, is formed on the substrate
S.
[0102] The substrate S and the vapor deposition apparatus 300 may
move relative to each other so as to perform a deposition process.
As shown in FIG. 3, the substrate S may move in an X axis direction
so as to continuously perform a deposition process. In other
implementations, the vapor deposition apparatus 300 may move, or
the substrate S and the vapor deposition apparatus 300 may not move
so as to perform the deposition process.
[0103] FIG. 4 illustrates a schematic plan view depicting a vapor
deposition apparatus 400 according to another exemplary
embodiment.
[0104] Referring to FIG. 4, the vapor deposition apparatus 400
includes a housing 401, a supply unit 401a, a plasma generator 411,
a reaction space 403, a first injection portion 442, a second
injection portion 450, a plurality of purge portions 460-1, 460-2,
and 460-3, and a plurality of exhaust portions 470-1, 470-2, . . .
, 470-5, and 470-6.
[0105] The supply unit 401a may be disposed to be connected to the
housing 401. For example, the supply unit 401a may be disposed in
an upper surface of the housing 401 and may have be shaped as a via
hole to supply one or more raw gases. The number of supply units
401a may be variously determined according to a size of a substrate
S with respect to which a deposition process is to be performed and
on which a layer is to deposited. The supply unit 401a may be
supplied with a first raw gas and an auxiliary gas and transmits
the first raw gas and the auxiliary gas to the reaction space 403.
The first raw gas may be a gas including oxygen, for example,
H.sub.2O, O.sub.2, N.sub.2O, or the like. The auxiliary gas may be
Ne.
[0106] The auxiliary gas supplied along with the first raw gas
through the supply unit 401a may collide with the first raw gas in
the reaction space 403 to improve a conversion rate of the first
raw gas into a radical form.
[0107] In particular, the auxiliary gas may include Ne. Ne has a
high first ionized energy of 21.56 eV. An ionization rate of Ne may
be prevented from excessively increasing in the reaction space 403
due to the high energy required for ionization of Ne. Accordingly,
collisions of ionized Ne ionized in the reaction space 403 with an
upper surface of the substrate S or a thin film pre-formed on the
upper surface of the substrate S, and consequent damage to the
upper surface of the substrate or the thin film may be prevented or
reduced.
[0108] Also, if a gas, including oxygen, for example, N.sub.2O, is
used as the first raw gas, oxygen ions generated by generating
plasma in the reaction space 403 or oxygen having a radical form
could abnormally accelerate, advance toward the substrate S, and
collide with the upper surface of the substrate S or the thin film,
thereby damaging the upper surface of the substrate S or the thin
film. However, in the present exemplary embodiment, the auxiliary
gas, in particular, the auxiliary gas, including Ne, may be
prevented from colliding with the oxygen ions or the oxygen having
the radical form, and abnormal acceleration of the oxygen ions or
the oxygen may be reduced or prevented. Therefore, damage to the
upper surface of the substrate S or the thin film may be prevented
or reduced, and a characteristic of a deposition layer that is to
be subsequently formed of the first raw gas may be improved.
[0109] Other elements are the same as those of the previous
exemplary embodiments described above, and thus their detailed
descriptions will be omitted.
[0110] An auxiliary gas, including Ne, instead of He may be used in
the vapor deposition apparatuses 100, 200, and 300 of FIGS. 1, 2,
and 3.
[0111] FIG. 5 illustrates a schematic cross-sectional view
depicting an organic light-emitting display apparatus 10
manufactured by a method of manufacturing an organic light-emitting
display apparatus, according to an exemplary embodiment. FIG. 6 is
an enlarged view of a portion F of FIG. 5.
[0112] In detail, FIGS. 5 and 6 illustrate an organic
light-emitting display apparatus manufactured by using one of the
vapor deposition apparatuses 100, 200, 300 and 400 described
above.
[0113] The organic light-emitting display apparatus 10 may include
a substrate 30. The substrate 30 may be formed of a glass material,
a plastic material, or a metallic material.
[0114] A buffer layer 31 may be formed on the substrate 30 to
provide a flat surface on the substrate 30 and prevent moisture and
foreign substances from permeating into the substrate 30.
[0115] A thin film transistor (TFT) 40, a capacitor 50, and an
organic light-emitting device 60 may be formed on the buffer layer
31. The TFT 40 may include an active layer 41, a gate electrode 42,
and source/drain electrodes 43. The organic light-emitting device
60 may include a first electrode 61, a second electrode 62, and an
intermediate layer 63.
[0116] The capacitor 50 may include a first capacitor electrode 51
and a second capacitor electrode 52.
[0117] In detail, the active layer 41 may be formed in a
predetermined pattern and disposed on an upper surface of the
buffer layer 31. The active layer 41 may include an inorganic
semiconductor material such as silicon, an organic semiconductor
material, or an oxide semiconductor material. Also, p-type or
n-type dopants may be injected to form the active layer 41. The
first capacitor electrode 51 is formed on the same layer as the
active layer 41 and may be formed of the same material as that of
which the active layer 41 is formed.
[0118] A gate insulating layer 32 may be formed on the active layer
41. The gate electrode 42 may be formed on the gate insulating
layer 32 to correspond to the active layer 41. An interlayer
insulating layer 33 may be formed to cover the gate electrode 42,
and the source and drain electrodes 43 may be formed on the
interlayer insulating layer 44 to contact a predetermined area of
the active layer 41. The second capacitor electrode 52 may be
formed on the same layer as the source/drain electrodes 43 and may
be formed of the same material as the source/drain electrodes
43.
[0119] A passivation layer 34 may be formed to cover the
source/drain electrodes 43, and an additional insulating layer may
be formed on the passivation layer 34 to planarize the TFT 40.
[0120] The first electrode 61 may be formed on the passivation
layer 34. The first electrode 61 may be formed to be electrically
connected to one of the source/drain electrodes 43. A
pixel-defining layer (PDL) 35 may be formed to cover the first
electrode 61. A predetermined opening 64 may be formed in the PDL
35, and the intermediate layer 63, including an organic emission
layer, may be formed in an area defined by the opening 64. The
second electrode 62 may be formed on the intermediate layer 63.
[0121] A encapsulation layer 70 may be formed on the second
electrode 62. The encapsulation layer 70 may include an organic
material or an inorganic material and may have a structure in which
an organic material and an inorganic material are alternately
stacked.
[0122] The encapsulation layer 70 may be formed by using one of the
vapor deposition apparatuses described above. The substrate 30, on
which the second electrode 62 has been formed, may pass through one
of the vapor deposition apparatuses described above to form a
desired layer.
[0123] In particular, the encapsulation layer 70 may include an
inorganic layer 71 and an organic layer 72. The inorganic layer 71
may include a plurality of layers 71a, 71b, and 71c, and the
organic layer 72 may include a plurality of layers 72a, 72b, and
72c. The plurality of layers 71a, 71b, and 71c of the inorganic
layer 71 may be formed by using a vapor deposition apparatus.
[0124] In other implementations, other insulating layers, such as
the buffer layer 31, the gate insulating layer 32, the interlayer
insulating layer 33, the passivation layer 34, the PDL 35, etc. of
the organic light-emitting display apparatus 10, may be formed by
using the vapor deposition apparatus.
[0125] Other thin films, such as the active layer 41, the gate
electrode 42, the source and drain electrodes 43, the first
electrode 61, the intermediate layer 63, the second electrode 62,
etc., may also be formed by using the vapor deposition
apparatus.
[0126] By way of summation and review, a vapor deposition method
may use one or more gases as a raw material for forming the thin
films. Examples of the vapor deposition method include various
types of methods, such as chemical vapor deposition (CVD), atomic
layer deposition (ALD), etc.
[0127] According to the ALD method, one raw material is injected,
and purged/pumped, and then, one or more molecular layers are
adsorbed on a substrate. Also, another type of raw material is
injected, and purged/pumped to finally form one or more desired
atomic layers.
[0128] A deposition process may be used to form the thin films of
an organic light-emitting display apparatus. However, as the
organic light-emitting display apparatus have become larger, with
higher resolution, the deposition process as been used to form thin
films having large areas. However, it is difficult deposit thin
films having a large area, and ways to improve a process of forming
the thin films may be limited.
[0129] Embodiments provide a vapor deposition apparatus that easily
improves a deposition layer characteristic, a deposition method,
and a method of manufacturing an organic light-emitting display
apparatus.
[0130] If the vapor deposition apparatus is used, a characteristic
of a deposition layer formed in the organic light-emitting display
apparatus may be improved to improve an electrical characteristic
and an image quality characteristic of the organic light-emitting
display apparatus
[0131] In a vapor deposition apparatus, a deposition method, and a
method of manufacturing an organic light-emitting display apparatus
according to the present invention, a characteristic of a
deposition layer may be improved.
[0132] Example embodiments have been disclosed herein, and although
specific terms are employed, they are used and are to be
interpreted in a generic and descriptive sense only and not for
purpose of limitation. In some instances, as would be apparent to
one of ordinary skill in the art as of the filing of the present
application, features, characteristics, and/or elements described
in connection with a particular embodiment may be used singly or in
combination with features, characteristics, and/or elements
described in connection with other embodiments unless otherwise
specifically indicated. Accordingly, it will be understood by those
of skill in the art that various changes in form and details may be
made without departing from the spirit and scope as set forth in
the following claims.
* * * * *