U.S. patent application number 15/129061 was filed with the patent office on 2017-04-20 for laser device.
This patent application is currently assigned to SHIMADZU CORPORATION. The applicant listed for this patent is SHIMADZU CORPORATION. Invention is credited to Ichiro FUKUSHI, Tomoyuki HIROKI, Naoya ISHIGAKI, Akiyuki KADOYA, Jiro SAIKAWA, Junki SAKAMOTO, Koji TOJO, Shingo UNO, Kazuma WATANABE.
Application Number | 20170110849 15/129061 |
Document ID | / |
Family ID | 54194201 |
Filed Date | 2017-04-20 |
United States Patent
Application |
20170110849 |
Kind Code |
A1 |
HIROKI; Tomoyuki ; et
al. |
April 20, 2017 |
LASER DEVICE
Abstract
A laser device has a plurality of semiconductor lasers, a
driving device that supplies a driving electric current to the
semiconductor laser, a trigger generation circuit that sends a
trigger signal to the driving device in order to output the driving
electric current, and a wave-combining device that wave-combines
laser light emitted from the semiconductor lasers at the
combined-wave end, and at least any one of a signal transmitting
time, an electric current transmitting time and a light
transmitting time is adjusted so as to be the time set respectively
for transmitting paths; wherein the signal transmitting time in
which the trigger signal transmits over the signal path, the
electric current transmitting time in which the laser light
transmits over the electric current path, a light transmitting time
in which the laser light transmits over the optical path.
Inventors: |
HIROKI; Tomoyuki; (KYOTO,
JP) ; TOJO; Koji; (KYOTO, JP) ; WATANABE;
Kazuma; (KYOTO, JP) ; FUKUSHI; Ichiro; (KYOTO,
JP) ; KADOYA; Akiyuki; (KYOTO, JP) ; SAKAMOTO;
Junki; (KYOTO, JP) ; SAIKAWA; Jiro; (KYOTO,
KR) ; ISHIGAKI; Naoya; (KYOTO, JP) ; UNO;
Shingo; (KYOTO, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SHIMADZU CORPORATION |
KYOTO |
|
JP |
|
|
Assignee: |
SHIMADZU CORPORATION
KYOTO
JP
|
Family ID: |
54194201 |
Appl. No.: |
15/129061 |
Filed: |
March 26, 2014 |
PCT Filed: |
March 26, 2014 |
PCT NO: |
PCT/JP2014/058478 |
371 Date: |
September 26, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01S 5/4012 20130101;
H01S 5/4025 20130101; B23K 26/0613 20130101; H01S 5/042 20130101;
H01S 5/4018 20130101; H01S 5/0428 20130101; H01S 5/42 20130101;
H01S 5/40 20130101 |
International
Class: |
H01S 5/042 20060101
H01S005/042; B23K 26/06 20060101 B23K026/06; H01S 5/40 20060101
H01S005/40 |
Claims
1. A laser device comprising: a plurality of semiconductor lasers;
a driving device that supplies the driving electric current to said
plurality of semiconductor lasers; a trigger generation circuit
that sends a trigger signal for outputting said driving electric
current to said driving device; a wave combining device that
combines laser lights emitted respectively from said plurality of
semiconductor lasers at the combined wave end; and a plurality of
transmitting paths, further comprising: a signal path over which
said trigger signal transmits from said trigger generation circuit
to said driving device; an electric current path over which said
driving electric current transmits from said driving device to said
semiconductor laser, and an optical path over which said laser
light transmits from said emission outlet to said combined-wave
end; wherein said plurality of transmitting paths includes
respectively one of light paths of said laser lights emitted from
any one of said plurality of semiconductor lasers; and wherein at
least one of said signal transmitting time, said electric current
transmitting time and said light transmitting time is adjusted so
that a total time of a signal transmitting time while said trigger
signal transmits over said signal path, an electric current
transmitting time while said driving electric current transmits
over said electric current path, and a light transmitting time
while said laser light transmits over said optical path can be the
time set for respective plurality of said transmitting paths.
2. The laser device according to claim 1, wherein: at least one of
said signal transmitting time, said electric current transmitting
time and said light transmitting time is adjusted so that said
total time is the same in a plurality of said transmitting
paths.
3. The laser device according to claim 1, wherein at least one of
said signal transmitting time, said electric current transmitting
time and said light transmitting time is adjusted so that said
respective laser lights output from said plurality of semiconductor
lasers reach to said combined-wave end at a different timing each
other.
4. The laser device according to claim 1, wherein: said plurality
of semiconductor lasers are connected in series so that said
driving electric current is supplied sequentially to said plurality
of semiconductor lasers, and said optical path is set longer if
said transmitting path including an optical path of the laser light
emitted from said semiconductor laser is in first supplied with
said driving electric current because said electric current path is
short.
5. The laser device according to claim 1, further comprising: said
plurality of driving devices receiving said trigger signal from
said same trigger generation circuit, and said optical path is set
long if said transmitting path including said driving device
receives in first said trigger signal because said signal path is
short.
6. The laser device according to claim 1, wherein: a difference
between said electric current transmitting times every said
transmitting path is set by using a conductor wire having each
other's different transmitting velocity of said driving electric
current for said electric current path of said respective
transmitting paths.
7. The laser device according to claim 1, wherein: a difference
between said light transmitting times every said transmitting path
is set by arranging an optical element decreasing a traveling
velocity of said laser light in said optical path.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application relates to and claims priority from PCT
Ser. No.:PCT/JP2014/058478 filed Mar. 26, 2014, the entire contents
of which are incorporated herein by reference.
FIGURE SELECTED FOR PUBLICATION
[0002] FIG. 1
BACKGROUND OF THE INVENTION
[0003] Field of the Invention
[0004] The present invention relates to a laser device that
combines the laser light emitted from a plurality of laser light
elements.
[0005] Description of the Related Art
[0006] A laser light is being applied to a fine machining such as a
welding, a cutting and a marking and so forth. It is desired that a
high power output and a low electric power consumption for a laser
light source to be applied to such laser machining. A gas laser, a
solid laser and a semiconductor laser and so forth has been used as
the laser light source, and there among, the semiconductor laser
attracts attention from a high efficiency and easy maintenance
standpoints. A laser device that combines the laser lights from a
plurality of semiconductor lasers is proposed to provide a
high-power output (e.g., Patent Document 1.)
RELATED PRIOR ART DOCUMENTS
[0007] JP 2013-48159 A1
ASPECTS AND SUMMARY OF THE INVENTION
[0008] According to one aspect of the present invention, there is
provided a laser device with a plurality of semiconductor lasers, a
drive device for supplying a drive current to the semiconductor
lasers, a trigger generation circuit for sending to the drive
device a trigger signal causing the drive current to be output, and
a multiplexing device for causing laser beams emitted from the
plurality of semiconductor lasers to be multiplexed at a
multiplexing end. In a total time which comprises a signal
propagation time for a trigger signal to propagate through a signal
path, a current propagation time for a drive current to propagate
through a current path, and a beam propagation time for a laser
beam to propagate through an optical path whereon the laser beam
propagates, at least any of the signal propagation time, the
current propagation time, and the light propagation time is
adjusted so that the total time yields a timing that has been set
for each of a plurality of propagation routes.
Problems to be Solved by the Invention
[0009] When a plurality of semiconductor lasers are spatially
in-place, a distance between a light path of each semiconductor
laser and the combined wave end at which the laser lights of such
semiconductor lasers are combined, may be different each other.
Therefore, when the semiconductor laser is pulse-driven, it has
been difficult to adjust each laser light to reach to the end of
the combined wave at a predetermined timing. For example, even if
it is attempted that a plurality of semiconductor laser lights
reaches to the end of the combined wave at the same timing so as to
provide a high-power output, the timings of which the laser lights
reach to the end of the combined wave may not coincide due to the
difference of the light path distance. As results, the combined
wave having a desired power cannot be provided, so that the
high-power output of the laser device cannot be obtained.
[0010] In addition, when a plurality of semiconductor lasers is
connected in series, the distance between each supply source of the
driving electric current to drive the semiconductor laser and the
semiconductor laser is different respectively, so that each timing
at which the laser light is emitted from the semiconductor laser is
different each other. Therefore, an adjustment of the timing at
which the laser light reaches to the end of the combined laser wave
has been difficult.
[0011] The purpose of the present invention is to provide a laser
device by which the laser light from a plurality of laser elements
can reach to the end of the combined laser wave at the
predetermined timing.
Means for Solving the Problem
[0012] According to the aspect of the present invention, a laser
device comprises: a plurality of semiconductor lasers; a driving
device that supplies the driving electric current to the plurality
of semiconductor lasers; a trigger generation circuit that sends a
trigger signal to output the driving electric current; and a wave
combining device that combines laser lights emitted respectively
from the plurality of semiconductor lasers 10 at the end of the
combined wave. And, it is defined that a plurality of transmission
paths includes each one of light path of laser lights emitted from
any one of the plurality of semiconductor lasers, wherein the
plurality of transmission paths comprises a signal path over which
the trigger signal that transmits from the trigger generation
circuit to the driving device over, an electric current path over
which the driving electric current that transmits from the driving
device to the semiconductor laser, and an optical path over which a
laser light that transmits from the emission outlet to the end of
the combined wave; and at least any one of a signal transmitting
time, an electric current transmitting time and a light
transmitting time is adjusted so as to be the time set respectively
for a plurality of transmitting paths; wherein the signal
transmitting time in which the trigger signal transmits over the
signal path, the electric current transmitting time in which the
laser light transmits over the electric current path, a light
transmitting time in which the laser light transmits over the
optical path.
Effect of the Invention
[0013] According to the aspect of the present invention, a laser
device by which the laser light from a plurality of laser elements
can reach to the end of the combined laser wave at the
predetermined timing can be provided.
[0014] The above and other aspects, features and advantages of the
present invention will become apparent from the following
description read in conjunction with the accompanying drawings, in
which like reference numerals designate the same elements.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 is a schematic diagram illustrating the structure of
a laser device according to the aspect of the Embodiment 1 of the
present invention.
[0016] FIG. 2 is a timing chart illustrating the operation of a
laser device according to the aspect of the Embodiment 1 of the
present invention.
[0017] FIG. 3 is a schematic diagram illustrating the power output
example at the end of the combined wave of a laser device according
to the aspect of the Embodiment 1 of the present invention. FIG. 4
is a schematic diagram illustrating the method of adjusting the
light transmitting time of a laser device according to the aspect
of the Embodiment 1 of the present invention.
[0018] FIG. 5 is a schematic diagram illustrating the structure of
a laser device according to the aspect of the Embodiment 2 of the
present invention.
[0019] FIG. 6 is a timing chart illustrating the operation of a
laser device according to the aspect of the Embodiment 2 of the
present invention.
[0020] FIG. 7 is a schematic diagram illustrating the structure of
a laser machining device according to the aspect of other
Embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0021] Reference will now be made in detail to embodiments of the
invention. Wherever possible, same or similar reference numerals
are used in the drawings and the description to refer to the same
or like parts or steps. The drawings are in simplified form and are
not to precise scale. The word `couple` and similar terms do not
necessarily denote direct and immediate connections, but also
include connections through intermediate elements or devices. For
purposes of convenience and clarity only, directional (up/down,
etc.) or motional (forward/back, etc.) terms may be used with
respect to the drawings. These and similar directional terms should
not be construed to limit the scope in any manner. It will also be
understood that other embodiments may be utilized without departing
from the scope of the present invention, and that the detailed
description is not to be taken in a limiting sense, and that
elements may be differently positioned, or otherwise noted as in
the appended claims without requirements of the written description
being required thereto.
[0022] Various operations may be described as multiple discrete
operations in turn, in a manner that may be helpful in
understanding embodiments of the present invention; however, the
order of description should not be construed to imply that these
operations are order dependent.
[0023] Next, referring to FIGs., the inventor sets forth the
Embodiments of the present invention. Referring to FIGs., the same
or similar each element has the same or similar sign. However, it
must be paid attention that FIGs. are schematic. In addition,
hereinafter, the aspect of the Embodiment is an example to specify
the technology aspect of the present invention and the structure
and the arrangement of the components are not limited to the aspect
of the Embodiment. The aspect of the Embodiment of the present
invention can be modified in a variety of aspects within the scope
of the present invention.
Embodiment 1
[0024] Referring to FIG. 1, the laser device 1 of the aspect of the
Embodiment of the present invention comprises: a plurality of
semiconductor lasers 10, a driving device 20 that provides each
plurality of semiconductor lasers 10 with a driving electric
current Id, a trigger generation circuit 30 that sends a trigger
signal St for outputting the driving electric current Id to the
driving device 20, a wave-combining device 40 that combines the
laser light emitted respectively from a plurality of semiconductor
lasers 10. The wave-combined light is incident in a light receiving
device 2. The light receiving device 2 is e.g., an optical fiber
and the wave-combining device 40 allows the wave-combined light to
be incident in the core element of the optical fiber.
[0025] Here, the inventor sets forth the case in which the number
of semiconductor lasers 10 included in the laser device 1 is three
(semiconductor lasers 11, 12, 13), as an example. Further, needless
to say, the number of semiconductor lasers 10 is not limited to
three.
[0026] Hereinafter, a path over which the trigger signal St
transmits from the trigger generation circuit 30 to the driving
device 20 is defined as "a signal path Ls." Specifically, the
signal path Ls is the path that is from a sending terminal of the
trigger signal St of the trigger generation circuit 30 to a
receiving terminal receiving the trigger signal St of the driving
device 20. For example, when the driving device 20 is a transistor,
the receiving terminal is a control electrode of the transistor
(e.g., a gate electrode and so forth.) Referring to FIG. 1, the
signal path Ls is indicated by a chain line (the same
hereinafter.)
[0027] In addition, a path over which the driving electric current
transmits from the driving device 20 to the semiconductor lasers 10
lasers 10 is "an electric current path Le." Specifically, the
electric path Le is the path that is from an output terminal
outputting the driving electric current Id of the driving device 20
to an input terminal in which the driving electric current Id of a
semiconductor lasers 10 lasers 10 is input. For example, an anode
terminal of the semiconductor lasers 10 is an input terminal.
Referring to FIG. 1, the electric current path Le is indicated by a
solid line (the same hereinafter.)
[0028] Further, a path over which the laser light transmits from
the emission outlet of the semiconductor lasers 10 to the
combined-wave end 50 is "an optical path Lp." Referring to FIG. 1,
the optical path Lp is indicated by a broken line (the same
hereinafter.) The optical path Lp passes through the wave-combining
device 40. The wave-combining device 40 may include, for example,
referring to FIG. 1, an optical element 41 that changes a traveling
direction of the laser light, and so forth. The optical element may
include e.g., a prism, a reflection lens and an optical mirror and
so forth.
[0029] As set forth above, it is defined that the laser device 1
comprises a plurality of transmitting paths La including the signal
path Ls, the electric current path Le and the optical path Lp. One
transmitting path La receptively includes one optical path of the
laser light emitted from any one of the plurality of the
semiconductor lasers 10.
[0030] According to the laser device 1, a total time (hereafter a
"total transmitting time Ta") of a signal transmitting time Ts
while the trigger signal St transmits over the signal path Ls, an
electric current transmitting time Te while the driving electric
current Id transmits over the electric current path Le, and a light
transmitting time Tp while the laser light transmits over the
optical path Lp is the time from the time when the trigger signal
St is output from the trigger generation circuit 30 to the time
when the laser light emitted from the semiconductor lasers 10
reaches to the combined-wave end 50.
[0031] Accordingly, the signal transmitting time Ts, the electric
current transmitting time Te and the light transmitting time Tp
affect the timing at which the laser light emitted from each
semiconductor lasers 10 reaches to the combined-wave end 50.
[0032] According to the laser device 1, the total transmitting time
Ta is set relative to each of the plurality of transmitting paths
La so that each laser light emitted from the semiconductor lasers
10 can reach to the combined-wave end 50 at the predetermined
timing. Specifically, according to the laser device 1, at least any
one of the signal transmitting time Ts, the electric current
transmitting time Te and the light transmitting time Tp is adjusted
so that the total transmitting time Ta can be the time set
respectively for the plurality of transmitting paths La.
[0033] Hereafter, the inventor sets forth the laser device 1 that
is set so that each laser light emitted from a plurality of
semiconductor lasers 10 can reach to the combined-wave end 50 at
the same timing. Specifically, at least any one of the signal
transmitting time Ts, the electric current transmitting time Te and
the light transmitting time Tp is adjusted so that the total
transmitting time Ta can be the same with regard to the plurality
of transmitting paths La.
[0034] Referring to FIG. 1, according to the laser device 1, one
driving device 20 is connected to one trigger generation circuit
30. And, the plurality of the semiconductor lasers 10 is connected
to the driving device 20 in series. The driving electric current Id
output from the driving device 20 is sequentially supplied to the
plurality of the semiconductor lasers 10. Specifically, the driving
electric current is supplied to the semiconductor lasers 11, 12, 13
connected to the driving device 20 in order from the closer side
thereof.
[0035] Accordingly, referring to FIG. 1, according to the laser
device 1, the signal paths Ls relative to the respective
transmitting paths La are commonly used, so that the signal
transmitting times Ts are the same.
[0036] On the other hand, the electric current path Le is
respectively different every transmitting path La. Specifically,
with regard to the plurality of the semiconductor lasers 10
connected each other in series, the closer the semiconductor lasers
10 is connected to the driving device 20, the shorter the electric
current transmitting time Te is because of the short electric
current path Le.
[0037] Accordingly, referring to FIG. 1, according to the laser
device 1, the closer the transmitting path La, including the light
path of the laser light emitted from the semiconductor lasers 10,
is connected to the driving device 20, the longer the optical path
Lp is set. In such way, the optical path Lp is set so as to cancel
the difference between the electric paths Le, so that the total
transmitting times Ta can be adjusted to become the same between
the respective transmitting paths La. As results, the timing when
each laser light emitted from the semiconductor lasers 10 reaches
to the combined-wave end 50 coincide each other. Therefore, the
laser device 1 can provide a high-power output.
[0038] Specifically, the transmitting paths La are set as follows.
Referring to FIG. 1; if the lengths Le of the electric current path
of the transmitting paths La1, La2, La3, including the respective
light paths of the laser light emitted from the semiconductor
lasers 11, 12, 13 of the laser device 1 are Le1, Le2, Le3;
Le1<Le2<Le3 is obtained. Here, if the transmitting rate of
the driving electric current Id is an electric current transmitting
rate Ve, the electric current transmitting time Te1 Te2, Te3
relative to the electric current paths Le having lengths Le1, Le2,
Le3 are represented as Le1/Ve, Le2/Ve, Le3/Ve.
[0039] At this time, Lp1, Lp2, Lp3 that are the lengths of the
optical paths Lp of the transmitting paths La1, La2, La3 are set so
that the differences between the electric current transmitting
times Te, when the driving electric current Id transmits the
electric transmitting paths Le having the lengths Le1, Le2, Le3,
can be canceled. Specifically, Lp1>Lp2>Lp3 is defined. If the
transmitting rate of the laser light relative to the optical paths
Lp is the light transmitting rate Vp, the light transmitting time
Tp1, Tp2, Tp3 relative to the optical paths Lp having lengths Lp1,
Lp2, Lp3 are represented as Lp1/Vp, Lp2/Vp, Lp3/Vp. The following
formula (1) can meet to make the total transmitting times Ta of the
transmitting paths La1, La2, La3 to be the same:
Te1+Tp1=Te2+Tp2=Te3+Tp3 (1)
Accordingly, Lp1, Lp2, Lp3 are set to meet the following formula
(2):
Le1/Ve+Lp1/Vp=Le2/Ve+Lp2/Vp=Le3Ne+Lp3/Vp (2)
[0040] In addition, referring to FIG. 1, with regard to the laser
device 1, each distance Lp0 between the emission outlet of the
semiconductor lasers 10 and the optical elements 41 relative to the
transmitting paths La is the same. A laser light emitted from the
semiconductor lasers 10 is reflected by the optical element 41 and
then travels to the light receiving device 2. And, referring to
FIG. 1, the laser lights emitted from the semiconductor lasers 11,
12, 13 are wave-combined in the optical element 41 of the
transmitting path La3. If a distance from the optical element 41 of
the transmitting path La1 to the combined-wave end 50 is the
distance Lp01, Lp1=Lp0+Lp01 is obtained. Further, if a distance
from the optical element 41 of the transmitting path La2 to the
combined-wave end 50 is the distance Lp02, Lp2=Lp0+Lp02 is
obtained. With regard to the transmitting path La3, Lp3=Lp0 is
obtained.
[0041] And, each distance from the optical element 41 to the
combined-wave end 50 is adjusted every transmitting path La so that
the total transmitting times Ta of the transmitting paths La1, La2,
La3 can coincide. Here, when the difference between the length Le1
and the length Let is Le02 and the difference between the length
Le1 and the length Le3 is Le03, the inventor sets forth an example
in which the total transmitting times Ta coincide. In such case,
referring to FIG. 2, an example of the time chart is illustrated,
in which the time when the driving electric current Id is supplied
to the semiconductor laser 11 is as the reference thereof.
[0042] Referring to FIG. 2, the laser light L1 is emitted from the
semiconductor laser 11 at the time t1. Then, the driving electric
current Id is supplied to the semiconductor laser 12 at the time t2
when the time Le02/Ve has passed from the time t1 so that the laser
light L2 can be emitted from the semiconductor laser 12. Further,
the driving electric current Id is supplied to the semiconductor
laser 13 at the time t3 when the time Le03/Ve has passed from the
time t1 so that the laser light L3 can be emitted from the
semiconductor laser 13.
[0043] On the other hand, the laser light L1 emitted from the
semiconductor laser 11 reaches to the combined-wave end 50 at the
time t4 when the time (Lp0+Lp01)/Vp has passed from the time U. In
addition, the laser light L2 emitted from the semiconductor laser
12 reaches to the combined-wave end 50 at the time t4 when the time
(Lp0+Lp02)/Vp has passed from the time t2. Further, the laser light
L3 emitted from the semiconductor laser 13 reaches to the
combined-wave end 50 at the time t4 when the time Lp0/Vp has passed
from the time t3.
[0044] Specifically, the differences Lp01, Lp02 between the optical
paths are set corresponding to the differences Le02, Le03 between
the electric current paths Le so as to meet the following formula
(3):
(Lp0+Lp01)/Vp=Le02/Ve+(Lp0+Lp02)Np=Le03/Ve+Lp0Np (3)
[0045] According to the above description, each distance from the
optical element 41 to the combined-wave end 50 is adjusted every
transmitting path La. However, needless to say, a distance from the
emission outlet of the semiconductor lasers 10 to the optical
element 41 can be adjusted, or both distance from the emission
outlet of the semiconductor lasers 10 to the optical element 41 and
distance from the optical element 41 to the combined-wave end 50
can be adjusted.
[0046] As set forth above, the total transmitting times of all
transmitting paths La are set so as to be equal so that each of
timing when each laser light emitted from the semiconductor lasers
11, 12, 13 reaches to the combined-wave end 50 can coincide. As
results, the laser device 1 can provide a high-power output.
[0047] As set forth above, the example, in which the difference
between the lengths of the electric current paths Le is canceled by
the difference between the lengths of the optical path Lp, is
described. However, needless to say, when the lengths of the
optical path Lp are different, the length of the electric current
paths can be adjusted.
[0048] Referring to FIG. 1, according to the laser device 1, the
semiconductor lasers 10 are directly connected in series to the
driving device 20 so that the electric power consumption can be
suppressed.
[0049] Meantime, as set forth above, the inventor set forth the
case when each total transmitting time Ta is the same with regard
to the respective transmitting paths La. Accordingly, the timing
when each laser light emitted from the semiconductor lasers 10
reaches to the combined-wave end 50 coincide each other, so that
the laser device 1 can be provided with a high-power output.
However, the length of the transmitting paths La can be changed
every semiconductor lasers 10, so that the timing when each laser
light of the semiconductor lasers 10 reaches to the combined-wave
end 50 can be set to be different. Specifically, the total
transmitting time is set with a predetermined deviation every
semiconductor lasers 10, Therefore, for example, referring to FIG.
3, the laser light of the semiconductor lasers 10 can be incident
in the light receiving device 2 at the constant cycle shorter than
the cycle of the trigger signal St sent by the trigger generation
circuit 30. Accordingly, for example, a laser device 1 can be
applied for laser machining, which does not requires a high-power
output obtained by wave-combining the laser lights from a plurality
of semiconductor lasers 10, but needs to irradiate a laser light in
a short cycle.
Alternative Embodiment
[0050] According to the above description, the inventor set forth
the case in which the physical length of the optical path Lp is set
and the light transmitting time Tp is adjusted, but the light
transmitting time Tp can be adjusted by the other method. For
example, referring to FIG. 4, an optical element, e.g., a glass
plate 42, that decreases the traveling velocity of the laser light
L, is in-place on the optical path Lp on which the laser light L
travels. In such way, the light transmitting velocity Vp can be
changed every optical path Lp and a difference between the light
transmitting times Tp can be set every transmitting path La.
[0051] Or other than an adjustment of the length of the electric
current Le, the conductor wire made of a different material or
having a different shape (pattern) can be adopted to the electric
current path Le so that the electric transmitting velocity Ve of
the driving electric current Id can be different every transmitting
path La. Specifically, the transmitting paths La and respective
electric current paths Le are made of the conductor wire each other
providing with a different electric current transmitting velocity
Ve of the driving electric current Id so that the difference
between electric current transmitting time Te every transmitting
path La can be set.
[0052] For example, an electric permittivity of the conductor wire
is set to be that the longer the length of the transmitting path La
of the electric current path Le is, the shorter the electric
current transmitting time Te is set. In such way, the difference
between the signal transmitting time Is over the transmitting path
La and the total of the light transmitting time Tp and the
difference between the signal transmitting time Is over the
transmitting path La and the electric current transmitting time Te
can be canceled to some extent. For example, the closer the driving
device 20 is to the trigger generation circuit 30, the slower
electric current transmitting velocity Ve the conductor wire having
is applied to the electric current path Le.
[0053] In such way, when a conductor wire made of materials having
a different permittivity or an conductor wire having a different
configuration relative to a film thickness or a width is used, the
electric current transmitting time Te can be adjusted as for the
respective plurality of the transmitting paths La. However, the
difference of the transmitting velocity based on the material of
the conductor wire or the configuration thereof is a little.
Therefore, it is preferred that the differences between lengths of
the signal paths Ls are approximately conformed by the differences
between lengths of the optical paths Lp and the effect of the
differences based on the differences of materials of the conductor
wire or configurations thereof is applied to a fine adjustment.
Embodiment 2
[0054] Referring to FIG. 5, according to the laser device 1 of the
Embodiment 2 of the present invention, a plurality of driving
devices 20 is connected to one trigger generation circuit 30 and
semiconductor lasers 10 are connected to the respective driving
devices 20. Specifically, a timing when a plurality of laser units
100 including each one of the driving devices 20 and the
semiconductor lasers 10 emits laser light is configured to be
controlled by a common trigger generation circuit 30. Here,
relative to each laser unit 100, the length of the electric current
paths Le is equal each other and the electric current transmitting
times Te thereof is equal each other. Others are the same as the
laser device 1 referred to FIG. 1.
[0055] Referring to FIG. 5, according to the laser device 1, signal
paths Ls are respectively different every transmitting path La.
Specifically, the closer the laser unit 100 is in-place to the
trigger generation circuit 30, the shorter the signal path Ls is
and the shorter the signal transmitting time Ts is, accordingly.
Specifically, the trigger signal St is received in order of the
driving devices 21, 22, 23. Specifically, the driving electric
current Id is supplied in order of the semiconductor lasers 11, 12,
13.
[0056] Accordingly, referring to FIG. 5., according to the laser
device 1, the closer the transmitting path La includes the light
path of the laser light emitted from the semiconductor lasers 100
that are in-place to the driving device 30, the longer optical path
Lp is set to cancel the difference of the signal paths Ls. In such
way, the total transmitting times Ta is set to be equal each other
with regard to the respective transmitting paths La. As results,
the timing when each laser light emitted from the semiconductor
lasers 10 reaches to the combined-wave end 50 coincides each other.
Therefore, the laser device 1 can provide a high-power output.
[0057] Specifically, as follows, the transmitting paths La are set.
Referring to FIG. 5; if the lengths Le of the signal path Ls of the
transmitting paths La1, La2, La3, including the respective
semiconductor lasers 11, 12, 13 of the laser device 1 are Ls1, Ls2,
Le3; Le1<Le2<Le3 is obtained. Here, if the transmitting
velocity of the trigger signal St is a signal transmitting velocity
Vs, the signal transmitting times Ts1, Ts2, Ts3 relative to the
signal path Ls having the lengths Ls1, Ls2, Ls3 are respectively
equal to Ls1/Vs, Ls2/Vs, Ls3/Vs.
[0058] At this time, Lp1, Lp2, Lp3, which are the lengths of the
optical paths Lp of the transmitting paths La1, La2, La3, are set
so that the differences between the trigger signal transmitting
times Ts, in which the trigger signal St transmits the signal paths
Ls having the lengths Ls1, Ls2, Ls3, can be canceled. Specifically,
Lp1>Lp2>Lp3 is defined. The electric current transmitting
time Tp1, Tp2, Tp3 relative to the optical paths Lp having lengths
Lp1 Lp2, Lp3 are represented by Lp1/Vp, Lp2/Vp, Lp3/Vp. Therefore,
the following formula (4) can meet to make the total transmitting
times Ta of the transmitting paths La1, La2, La3 the same:
Ts1+Tp1=Ts2+Tp2=Ts3+Tp3 (4)
Accordingly, Lp1, Lp2, Lp3 are set to meet the following formula
(5):
Ls1/Vs+Lp1/Vp=Ls2/Vs+Lp2/Vp=Ls3/Vs+Lp3/Vp (5)
[0059] In addition, with regard to the laser device 1 referring to
FIG. 5, the distances Lp0 between the emission outlet of the
semiconductor lasers 10 and the optical element 41 relative to the
transmitting paths La are the same, and Lp1=Lp0+p01, Lp2=Lp0+Lp02,
Lp3 Lp0 are provided.
[0060] And, each distance from the optical element 41 to the
combined-wave end 50 is adjusted every transmitting path La, so
that the total transmitting times Ta of the transmitting paths
La1-La3 can coincide. Here, the inventor sets forth how the total
transmitting times Ta can coincide, as an example, when the
difference between the length Ls1 and the length Ls2 is Ls02 and
the difference between the length Ls1 and the length Ls3 is Ls03.
In such case, referring to FIG. 6, an example of the timing chart
is illustrated as the reference time t0 that is the time when the
trigger signal St is sent to the driving device 21 having the
length Ls1 of the signal path Ls.
[0061] Referring to FIG. 6, the laser light L1 is emitted from the
semiconductor laser 11 at the time t1 after the time Ls0/Vs has
passed from the time t0. Then after, the laser light L2 is emitted
from the semiconductor laser 12 at the time t2 after the time
Ls02/Vs has passed from the time t1. Further, the laser light L3 is
emitted from the semiconductor laser 13 at the time t3 after the
time Ls03/Vs has passed from the time t1.
[0062] On the other hand, the laser light L1 emitted from the
semiconductor laser 11 reaches to the combined-wave end 50 at the
time t4 when the time (Lp0 Lp01)/Vp has passed from the time t1. In
addition, the laser light L2 emitted from the semiconductor laser
12 reaches to the combined-wave end 50 at the time t4 when the time
(Lp0+Lp02)/Vp has passed from the time t2. Further, the laser light
L3 emitted from the semiconductor laser 13 reaches to the
combined-wave end 50 at the time t4 when the time Lp0/Vp has passed
from the time t3.
[0063] Specifically, the differences Lp01, Lp02 of the optical
paths are set corresponding to the differences Ls02, Ls03 of the
signal paths Ls so as to meet the following formula (6):
(Lp0+Lp01)/Vp=Ls02/Vs+(Lp0+Lp02)/Vp=Ls03/Vs+Lp0/Vp (6)
[0064] According to the above description, the inventor sets forth
the example in which each distance from the optical element 41 to
the combined-wave end 50 is adjusted every transmitting path La.
However, needless to say, a distance from the emission outlet of
the semiconductor lasers 10 to the optical element 41 can be
adjusted, or both distance from the emission outlet of the
semiconductor lasers 10 to the optical element 41 and distance from
the optical element 41 to the combined-wave end 50 can be
adjusted.
[0065] As set forth above, the total transmitting times Ta of all
transmitting paths La are set to become equal so that each timing
when each laser light emitted from the semiconductor lasers 11, 12,
13 reaches to the combined-wave end 50 can coincide. As results,
the laser device 1 can provide a high-power output. Further, as
well as the Embodiment 1, the respective laser lights output from
the semiconductor lasers 10 can reach to the combined-wave end 50
at the different timing.
[0066] Referring to FIG. 5, according to the laser device 1, a
plurality of the semiconductor laser units 100 are connected in
parallel to the trigger generation circuit 30 so that the plurality
of the semiconductor lasers 10 can be controlled at a high
velocity. Further, as set forth relative to the alternative
Embodiment of the Embodiment 1, the light transmitting velocity Vp
is changed every optical path Lp so that the light transmitting
time Tp can be adjusted every transmitting path La.
[0067] Further, the example is described, in which the difference
of the length between the signal paths Ls is canceled by the
difference between the lengths of the optical paths Lp. However,
needless to say, when the lengths of the optical path Lp are
different, the length between the signal paths Ls can be
adjusted.
Alternative Embodiment
[0068] The electric current paths Le between the driving device 20
and the semiconductor lasers 10 can be set every laser unit 100 so
as to cancel the difference between the signal paths Ls.
Specifically, the longer signal paths Ls the laser unit 100 has,
the shorter path the electric current paths Le should be set to be.
In such way, the difference between the signal transmitting times
Ts can also be canceled by the electric current transmitting time
Te. Or needless to say, the difference between the signal
transmitting times Ts can be canceled by both electric current
transmitting time Te and light transmitting time Tp.
[0069] For example, Le02 is the difference between the length of
the electric current paths Le between the driving device 21 and the
semiconductor laser 11 and the length of the electric current path
Le between the driving device 22 and the semiconductor laser 12;
and Le03 is the difference the electric current paths Le between
the length of the driving device 21 and the semiconductor laser 11
and the length of the electric current path Le between the driving
device 23 and the semiconductor laser 13. At this time, the signal
paths Ls, the electric current paths Le and the optical paths Lp
are set every transmitting path La so as to meet the below formula
(7).
(Lp0+Lp01)/Vp=Ls02/Vs+Le02/Ve+(Lp0+Lp02)/Vp=Ls03/Vs+Le03/Ve+Lp0/Vp
(7)
[0070] If the formula (7) is met, the total transmitting times Ta
can be equal each other with regard to all transmitting paths La.
As results, the timing when each laser light emitted from the
semiconductor laser 11, 12, 13 reaches to the combined-wave end 50
can coincide each other.
[0071] Other aspects are the same as the Embodiment 1 and the
duplicate description is skipped.
Other Embodiments
[0072] As set forth above, the present invention is described
according to the aspect of the Embodiments, but it should not be
understood that any parts, description and FIGs, of the present
disclosure may limit the present invention. According to the
present disclosure, a person skilled in the art can realize that a
variety of the alternative Embodiment and applicable technology are
clear.
[0073] For example, referring to FIG. 7, the present invention can
be applied to a laser device 1 having a plurality of laser units
100 that comprises a driving device 20, in which a plurality of
semiconductor lasers 10 are respectively connected in series. As
described above, according to the laser device 1, in which trigger
signal St sent from the same trigger generation circuit 30 to a
plurality of laser units 100, at least any one of the signal
transmitting time Ts, the electric current transmitting time Te and
the light transmitting time Tp is adjusted so that the total
transmitting time Ta can be the time set respectively for the
plurality of transmitting paths La.
[0074] Specifically, the optical paths Lp is adjusted to cancel the
difference between electric current paths Le inside the laser unit
100, or the electric current path Le is adjusted to cancel the
difference between optical paths Lp between the laser units 100. In
addition, either optical paths Lp or electric current paths Le is
adjusted or both are adjusted to cancel the difference between the
signal paths Ls between the laser units 100.
[0075] In such way, needless to say, the present invention may
include a variety of aspects of the Embodiments and so forth, even
not described here. Accordingly, the scope of the technology of the
present invention can be only specified by the invention specific
matters related to the reasonable scope of the above
description.
INDUSTRIAL APPLICABILITY
[0076] The present invention relates to a laser device that
wave-combines the laser light emitted from a plurality of
semiconductor lasers.
[0077] Having described at least one of the preferred embodiments
of the present invention with reference to the accompanying
drawings, it will be apparent to those skills that the invention is
not limited to those precise embodiments, and that various
modifications and variations can be made in the presently disclosed
system without departing from the scope or spirit of the invention.
Thus, it is intended that the present disclosure cover
modifications and variations of this disclosure provided they come
within the scope of the appended claims and their equivalents.
* * * * *