U.S. patent application number 15/267889 was filed with the patent office on 2017-04-20 for photoelectric conversion device and imaging device.
This patent application is currently assigned to Kabushiki Kaisha Toshiba. The applicant listed for this patent is Kabushiki Kaisha Toshiba. Invention is credited to Satomi Taguchi, Isao Takasu, Atsushi WADA.
Application Number | 20170110517 15/267889 |
Document ID | / |
Family ID | 58530224 |
Filed Date | 2017-04-20 |
United States Patent
Application |
20170110517 |
Kind Code |
A1 |
WADA; Atsushi ; et
al. |
April 20, 2017 |
PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICE
Abstract
According to one embodiment, a photoelectric conversion device
includes a first electrode, a second electrode, a photoelectric
conversion layer provided between the first electrode and the
second electrode, and a first layer provided between the second
electrode and the photoelectric conversion layer, the first layer
including a phenyl pyridine derivative. The phenyl pyridine
derivative is represented by formula (1) below, ##STR00001## Rings
A, B, C, and D in the formula (1) are pyridine rings. Each of R1 to
R11 in the formula (1) is one selected from the group consisting of
hydrogen, a straight-chain alkyl group, a branched alkyl group, an
aryl group, and an electron-withdrawing heteroaryl group.
Inventors: |
WADA; Atsushi; (Kawasaki,
JP) ; Takasu; Isao; (Setagaya, JP) ; Taguchi;
Satomi; (Ota, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Kabushiki Kaisha Toshiba |
Minato-ku |
|
JP |
|
|
Assignee: |
Kabushiki Kaisha Toshiba
Minato-ku
JP
|
Family ID: |
58530224 |
Appl. No.: |
15/267889 |
Filed: |
September 16, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/0072 20130101;
H01L 27/14665 20130101; H01L 27/307 20130101; H01L 51/0059
20130101; H01L 51/4273 20130101; H01L 2251/308 20130101; H01L
51/0061 20130101; C07D 213/06 20130101; H01L 51/442 20130101; H01L
51/0067 20130101 |
International
Class: |
H01L 27/30 20060101
H01L027/30; H01L 51/00 20060101 H01L051/00; C07D 213/06 20060101
C07D213/06; H01L 51/42 20060101 H01L051/42; H01L 51/44 20060101
H01L051/44 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 16, 2015 |
JP |
2015-204647 |
Claims
1. A photoelectric conversion device comprising: a first electrode;
a second electrode; a photoelectric conversion layer provided
between the first electrode and the second electrode; and a first
layer provided between the second electrode and the photoelectric
conversion layer, the first layer including a phenyl pyridine
derivative, the phenyl pyridine derivative being represented by
formula (1) below, ##STR00013## rings A, B, C, and D in the formula
(1) being pyridine rings, and each of R1 to R11 in the formula (1)
being one selected from the group consisting of hydrogen, a
straight-chain alkyl group, a branched alkyl group, an aryl group,
and an electron-withdrawing heteroaryl group.
2. The device according to claim 1, wherein the R1 to R11 are
identical to each other.
3. The device according to claim 1, wherein one of the R1 to R11 is
different from another one of the R1 to R11.
4. The device according to claim 1, wherein: the phenyl pyridine
derivative is represented by formula (2) below, ##STR00014##
5. The device according to claim 1, wherein: the phenyl pyridine
derivative is represented by formula (3) below, ##STR00015##
6. The device according to claim 1, wherein: the phenyl pyridine
derivative is represented by formula (4) below, ##STR00016##
7. The device according to claim 1, wherein: the phenyl pyridine
derivative is represented by formula (5) below, ##STR00017##
8. The device according to claim 1, wherein a potential of the
second electrode is higher than a potential of the first
electrode.
9. The device according to claim 1, further comprising a second
layer provided between the first electrode and the photoelectric
conversion layer.
10. The device according to claim 9, wherein the second layer
includes at least one of N,N'-bis(3-methylphenyl)-N,
N'-diphenylbenzidine (TPD), or tris(4-carbazoyl-9-yl-phenyl)amine
(TCTA).
11. The device according to claim 1, wherein a work function of the
second electrode is smaller than a work function of the first
electrode.
12. The device according to claim 1, wherein the first electrode
includes at least one oxide of indium, zinc, or tin.
13. The device according to claim 1, wherein the second electrode
includes at least one of aluminum, silver, gold, lithium-aluminum
alloy, lithium-magnesium alloy, lithium-indium alloy,
magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum
alloy, indium-silver alloy, calcium-aluminum alloy, or a compound,
and the compound includes an oxide of at least one of indium, zinc,
or tin.
14. The device according to claim 1, wherein the photoelectric
conversion layer includes at least one of coumarin, quinacridone,
sub-phthalocyanine, fullerene (C60), perylene, or
phthalocyanine.
15. The device according to claim 1, wherein a thickness of the
first layer is not less than 3 and not more than 10 nm.
16. The device according to claim 1, further comprising a
controller electrically connected to the first electrode and the
second electrode, and which increases the potential of the second
electrode to be higher than the potential of the first
electrode.
17. An imaging device comprising a photoelectric conversion device,
the photoelectric conversion device including: a first electrode; a
second electrode; a photoelectric conversion layer provided between
the first electrode and the second electrode; and a first layer
provided between the second electrode and the photoelectric
conversion layer, the first layer including a phenyl pyridine
derivative, the phenyl pyridine derivative being represented by
formula (1) below, ##STR00018## rings A, B, C, and D in the formula
(1) being pyridine rings, and each of R1 to R11 in the formula (1)
being one selected from the group consisting of hydrogen, a
straight-chain alkyl group, a branched alkyl group, an aryl group,
and an electron-withdrawing heteroaryl group.
18. The device according to claim 17, wherein, a plurality of the
photoelectric conversion device are provided, the second electrode
of one of the plurality of photoelectric conversion devices is
separated along a first direction from the first electrode of the
one of the plurality of photoelectric conversion devices, and at
least a portion of the plurality of photoelectric conversion
devices is juxtaposed along a second direction intersecting with
the first direction.
19. The device according to claim 17, further comprising: a
photodiode, the second electrode being separated along a first
direction from the first electrode, and the photodiode overlapping
the photoelectric conversion device in the first direction.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from Japanese Patent Application No.2015-204647, filed on
Oct. 16, 2015; the entire contents of which are incorporated herein
by reference.
FIELD
[0002] Embodiments described herein relate generally to a
photoelectric conversion device and an imaging device.
BACKGROUND
[0003] There are photoelectric conversion devices in which organic
materials are used. Additionally, there are imaging devices in
which photoelectric conversion devices are used. There is a need
for improvements in thermal stability for photoelectric conversion
devices.
BRIEF DESCRIPTION OF THE DRAWINGS
[0004] FIG. 1 is a schematic cross-sectional view illustrating a
photoelectric conversion device according to a first
embodiment;
[0005] FIG. 2 is a graph illustrating characteristics of the
photoelectric conversion device;
[0006] FIG. 3 is a schematic cross-sectional view illustrating an
imaging device according to a second embodiment;
[0007] FIG. 4 is a perspective view illustrating a device that
includes the imaging device according to the second embodiment;
[0008] FIG. 5 is a perspective view illustrating another device
that includes the imaging device according to the second
embodiment;
[0009] FIG. 6 is a plan view illustrating a moving body that
includes the imaging device according to the second embodiment;
[0010] FIG. 7 is a plan view illustrating another moving body that
includes the imaging device according to the second embodiment;
[0011] FIG. 8 is a plan view illustrating a device that includes
the imaging device according to the second embodiment; and
[0012] FIG. 9 is a plan view illustrating another device that
includes the imaging device according to the second embodiment.
DETAILED DESCRIPTION
[0013] According to one embodiment, a photoelectric conversion
device includes a first electrode, a second electrode, a
photoelectric conversion layer provided between the first electrode
and the second electrode, and a first layer provided between the
second electrode and the photoelectric conversion layer, the first
layer including a phenyl pyridine derivative. The phenyl pyridine
derivative is represented by formula (1) below,
##STR00002##
Rings A, B, C, and D in the formula (1) are pyridine rings. Each of
R1 to R11 in the formula (1) is one selected from the group
consisting of hydrogen, a straight-chain alkyl group, a branched
alkyl group, an aryl group, and an electron-withdrawing heteroaryl
group.
[0014] Various embodiments will be described hereinafter with
reference to the accompanying drawings.
[0015] The drawings are schematic and conceptual; and the
relationships between the thickness and width of portions, the
proportions of sizes among portions, etc., are not necessarily the
same as the actual values thereof. Further, the dimensions and
proportions may be illustrated differently among drawings, even for
identical portions.
[0016] In the specification and drawings, components similar to
those described or illustrated in a drawing thereinabove are marked
with like reference numerals, and a detailed description is omitted
as appropriate.
First Embodiment
[0017] FIG. 1 is a schematic cross-sectional view illustrating a
photoelectric conversion device according to a first
embodiment.
[0018] As shown in FIG. 1, the photoelectric conversion device 110
according to the embodiment includes a first electrode 11, a second
electrode 12, a photoelectric conversion layer 30, and a first
layer 50.
[0019] The second electrode 12 is separated along a first direction
from the first electrode 11.
[0020] The first direction is defined as a "Z-axis direction". One
direction perpendicular to the Z-axis direction is defined as an
"X-axis direction". A direction perpendicular to both the Z-axis
direction and the X-axis direction is defined as a "Y-axis
direction".
[0021] The first electrode 11 and the second electrode 12 spread,
for example, along an X-Y plane. The first electrode 11 and the
second electrode 12 are substantially parallel to the X-Y
plane.
[0022] The photoelectric conversion layer 30 is provided between
the first electrode 11 and the second electrode 12. The first layer
50 is provided between the second electrode 12 and the
photoelectric conversion layer 30.
[0023] In this example, a base body 10s is provided. The first
electrode 11 is provided between the base body 10s and the second
electrode 12. In this example, a second layer 60 is provided
between the first electrode 11 and the photoelectric conversion
layer 30. In this example, a flattening layer 34 is provided
between the base body 10s and the second layer 60.
[0024] The photoelectric conversion layer 30 is disposed between
the second layer 60 and the second electrode 12. The first layer 50
is disposed between the photoelectric conversion layer 30 and the
second electrode 12.
[0025] The first layer 50 includes a phenyl pyridine derivative.
This phenyl pyridine derivative is represented by formula (1)
below.
##STR00003##
[0026] In formula (1) above, rings A, B, C, and D are pyridine
rings. In formula (1) above, each of R1 to R11 is one selected from
the group consisting of hydrogen, a straight-chain alkyl group, a
branched alkyl group, an aryl group, and an electron-withdrawing
heteroaryl group.
[0027] One molecule of the compound represented by formula (1)
above has seven benzene rings and the four pyridine rings A, B, C,
and D. Each of the pyridine rings A, B, C, and D has a carbon atom
at the position where each of the pyridine rings A, B, C, and D
bonds with the benzene rings. Each of the pyridine rings A, B, C,
and D bonds with the benzene rings at, for example, the third
position. Each of the pyridine rings bonds with the benzene rings
at, for example the fourth position. Each of the pyridine rings A,
B, C, and D may bond with the benzene rings at mutually different
positions.
[0028] The carbon atom included on the six-membered ring in each of
the seven benzene rings may or may not include a substituent group.
The carbon atom included on the six-membered ring in the four
pyridine rings A, B, C, and D may or may not include a substituent
group. For example, each of the R1 to R11 is one selected from the
group consisting of hydrogen, a straight-chain alkyl group, a
branched alkyl group, an aryl group, and an electron-withdrawing
heteroaryl group. The number of carbon atoms included in each of
the straight-chain alkyl group, the branched alkyl group, the aryl
group, and the electron-withdrawing heteroaryl group is, for
example, 6 or less.
[0029] In the electron-withdrawing group, the Hammett substituent
constant is positive. In the embodiment, the electron-withdrawing
heteroaryl group is, for example, a heteroaryl group that has a
positive Hammett substituent constant.
[0030] In the embodiment, the R1 to R11 described above are, for
example, identical to each other. In the embodiment, one of the R1
to R11 may be different from another one of the R1 to R11.
[0031] The first layer 50 includes the phenyl pyridine derivative
described above and, as a result, high thermal stability, for
example, is obtained. Thus, a photoelectric conversion device can
be provided by which thermal stability can be improved. Examples of
characteristics of the photoelectric conversion device 110 are
described later.
[0032] The photoelectric conversion device 110 is, for example, an
organic photoelectric conversion device. The photoelectric
conversion device 110, for example, absorbs and photoconverts at
least a portion of light that has entered the photoelectric
conversion device 110.
[0033] Electrical characteristics between the first electrode 11
and the second electrode 12 vary depending on the incident light.
For example, a controller 70 is provided. The controller 70 is
electrically connected to the first electrode 11 and the second
electrode 12. The controller 70 applies a potential difference
between the first electrode 11 and the second electrode 12. For
example, the controller 70 increases the potential of the second
electrode 12 to be higher than the potential of the first electrode
11. The first electrode 11 becomes a cathode and the second
electrode 12 becomes an anode. Due to this potential difference,
current flowing between the first electrode 11 and the second
electrode 12 varies depending on the intensity of the light that
has entered the photoelectric conversion device 110. The
photoelectric conversion device 110 may, for example, be used as an
optical sensor.
[0034] The first electrode 11 includes, for example, a conductive,
optically transparent material. The flattening layer 34 mitigates
irregularities in, for example, the surface of the first electrode
11.
[0035] The second layer 60 suppresses, for example, the injection
of electrons from the first electrode 11 toward the photoelectric
conversion layer 30. The second layer 60 functions, for example, as
an electron blocking layer. The second layer 60 transports holes
generated at the photoelectric conversion layer 30 to the first
electrode 11.
[0036] The light that has entered the photoelectric conversion
device 110 enters the photoelectric conversion layer 30. The
photoelectric conversion layer 30 absorbs and photoconverts at
least a portion of this light, and generates electrons and
holes.
[0037] The first layer 50 suppresses, for example, the injection of
holes from the second electrode 12 toward the photoelectric
conversion layer 30. The first layer 50 functions as, for example,
a hole blocking layer. The first layer 50 transports electrons
generated at the photoelectric conversion layer 30 to the second
electrode 12.
[0038] The second electrode 12 is electrically connected to the
photoelectric conversion layer 30. The second electrode 12 receives
the electrons generated at the photoelectric conversion layer
30.
[0039] In this example, light that has entered the base body 10s
enters the photoelectric conversion layer 30 via the first
electrode 11, the flattening layer 34, and the second layer 60.
[0040] In the embodiment, the phenyl pyridine derivative included
in the first layer 50 may, for example, include a compound
represented by formula (2) below.
##STR00004##
[0041] In the embodiment, the phenyl pyridine derivative included
in the first layer 50 may, for example, include a compound
represented by formula (3) below.
##STR00005##
[0042] In the embodiment, the phenyl pyridine derivative included
in the first layer 50 may, for example, include a compound
represented by formula (4) below.
##STR00006##
[0043] In the embodiment, the phenyl pyridine derivative included
in the first layer 50 may, for example, include a compound
represented by formula (5) below.
##STR00007##
[0044] In formulas (2) to (5) above, the carbon atom included on
the six-membered ring in each of the seven benzene rings may or may
not include a substituent group. The carbon atom included on the
six-membered ring in the four pyridine rings A, B, C, and D may or
may not include a substituent group.
[0045] In formulas (2) to (4) above, for example, each of the R1 to
R11 is one selected from the group consisting of hydrogen, a
straight-chain alkyl group, a branched alkyl group, an aryl group,
and an electron-withdrawing heteroaryl group (e.g. a heteroaryl
group that has a positive Hammett substituent constant). The number
of carbon atoms included in each of the straight-chain alkyl group,
the branched alkyl group, the aryl group, and the
electron-withdrawing heteroaryl group is, for example, 6 or less.
The R1 to R11 may be identical to each other or may be different
from each other.
[0046] Hereinafter, an example of the synthesis of the phenyl
pyridine derivative included in the first layer 50 is described. In
the following, an example of the synthesis of the compound
represented by formula (3) above is described.
[0047] For example, 4-pyridine boronic acid pinacol ester,
1-bromo-3-iodobenzene, Pd(PPh.sub.3).sub.4, and cesium carbonate
are added to a dioxane solution and reacted. Thus, a first compound
is obtained. Then, the first compound, bis(pinacolato)diboron,
Pd(dppf)Cl.sub.2, and potassium acetate are added to a DMAc
solution and reacted. Thus, a second compound is obtained. The
second compound, tribromobenzene, Pd(PPh.sub.3).sub.4, and cesium
carbonate are added to a dioxane solution and reacted. Thus, a
third compound is obtained. The third compound, 1,4-phenylene
diboronic acid, Pd(PPh.sub.3).sub.4, and cesium carbonate are added
to a dioxane solution and reacted. Thus, the compound represented
by formula (3) is obtained. Purification is appropriately performed
in the reactions described above.
[0048] A decomposition temperature of the compound represented by
formula (3) above is, for example 532.degree. C. Thus, the
decomposition temperature of the compound represented by formula
(3) is high. As a result of using the first layer 50 including the
compound represented by formula (3), high thermal stability can be
obtained.
[0049] In the following, an example of the synthesis of the
compound represented by formula (5) above is described.
[0050] A first compound Com1 is obtained by the reaction
represented by formula (6) below.
##STR00008##
[0051] A second compound Com2 is obtained by the reaction
represented by formula (7) below.
##STR00009##
[0052] A third compound Com3 is obtained by the reaction
represented by formula (8) below.
##STR00010##
[0053] A fourth compound Com4 is obtained by the reaction
represented by formula (9) below.
##STR00011##
[0054] The fourth compound Com4 corresponds to the compound
represented by formula (5) above. Purification is appropriately
performed in the reactions of formula (6) to formula (9) above.
[0055] Hereinafter, examples of characteristics of the
photoelectric conversion device 110 are described.
[0056] FIG. 2 is a graph illustrating characteristics of the
photoelectric conversion device.
[0057] FIG. 2 shows external quantum efficiency (EQE) when the
photoelectric conversion device 110 is annealed at various
temperatures. The external quantum efficiency corresponds to
photoelectric conversion efficiency. The annealing temperature T
(.degree. C.) is shown on the horizontal axis. The external quantum
efficiency EQE (%) is shown on the vertical axis. The external
quantum efficiency EQE is measured using a spectral response
measurement device (CEP-V25ML, manufactured by Bunkokeiki Co.,
Ltd.). In the measurement, a wavelength of irradiation light is 530
nm. In the measurement, an output is 50 .mu.W/cm.sup.2.
[0058] In the photoelectric conversion device 110 of this example,
the phenyl pyridine derivative included in the first layer 50
includes the compound represented by formula (3) above.
[0059] In FIG. 2, characteristics of a photoelectric conversion
device 119 of a reference example are shown in the photoelectric
conversion device 119, the compound represented by formula (10)
below is used as the first layer 50.
##STR00012##
[0060] In the photoelectric conversion devices 110 and 119, the
following apply: the base body 10s is a glass substrate; the first
electrode 11 is ITO; a thickness of the first electrode 11 is 50
nm; a thickness of the flattening layer 34 is 35 nm; a thickness of
the second layer 60 is 3 nm; a thickness of the photoelectric
conversion layer 30 is 80 nm; a thickness of the first layer 50 is
10 nm; the second electrode 12 is aluminum; and a thickness of the
second electrode 12 is 150 nm.
[0061] In the photoelectric conversion devices 110 and 119, the
external quantum efficiency EQE when the temperature T of the
annealing is 25.degree. C. is about 70%. In the photoelectric
conversion device 119, when the temperature is 130.degree. C. or
higher, the external quantum efficiency EQE significantly declines.
When the temperature T of the annealing is 150.degree. C., the
external quantum efficiency EQE is 61% in the photoelectric
conversion device 110 and is 33% in the photoelectric conversion
device 119. As a result of using the compound represented by
formula (1) above as the first layer 50 (e.g. the hole blocking
layer), high external quantum efficiency EQE can be obtained. As a
result of using the compound represented by formula (1) as the
first layer 50, high thermal stability can be obtained.
[0062] In the embodiment, for example, the first electrode 11 is a
cathode and the second electrode 12 is an anode. Electrons are
injected into the cathode. Holes are injected into the anode. The
potential of the second electrode 12 is preferably higher than the
potential of the first electrode 11; and current flows from the
conductor with high potential to the conductor with low potential.
As a result of using the compound represented by formula (1) as the
first layer 50 (e.g. the hole blocking layer), for example, dark
current, which is a cause of noise, is suppressed.
[0063] Further description of the example of the photoelectric
conversion device 110 is given below.
[0064] The base body 10s, for example, supports the other members.
A material that transmits light, for example, is used for the base
body 10s. The base body 10s includes, for example, a glass
substrate. The base body 10s includes, for example, a synthetic
resin. The base body 10s is, for example, transparent. The base
body 10s is, for example, optically transparent. The base body 10s
transmits at least a portion of the light that enters the
photoelectric conversion device 110.
[0065] For example, the base body 10s has strength sufficient to
support the other members. The thickness, shape, structure, size,
and the like of the base body 10s are not limited and may be
selected in accordance with the use, purpose, and the like
thereof.
[0066] The first electrode 11 is, for example, provided on the base
body 10s. The first electrode 11 is, for example, in contact with
the base body 10s. The first electrode 11 is electrically connected
to the photoelectric conversion layer 30. The first electrode 12
receives the holes generated at the photoelectric conversion layer
30.
[0067] The first electrode 11 includes, for example, a conductive
metal oxide film. The first electrode 11 may include, for example,
a metal thin film. This metal thin film is, for example, optically
transparent. The first electrode 11 may include an organic
conductive polymer.
[0068] The metal oxide film included in the first electrode 11
includes, for example, at least one of indium oxide, zinc oxide,
tin oxide, indium tin oxide (ITO), or fluorine-doped tin oxide
(FTO). The first electrode 11 includes, for example, at least one
oxide of indium, zinc, or tin. The oxide may include fluorine. The
metal thin film included in the first electrode 11 includes, for
example, at least one of gold, platinum, silver, or copper. The
conductive polymer included in the first electrode 11 may, for
example, include at least one of polyaniline or a derivative
thereof. The conductive polymer may, for example, include at least
one of polythiophene or a derivative thereof. The first electrode
11 preferably includes a transparent electrode of ITO. Hence, high
light transmittance and high electrical conductivity can be
obtained.
[0069] In cases where the first electrode 11 includes ITO, the
thickness of the first electrode 11 is preferably not less than 30
and not more than 300 nm. At thicknesses of not less than 30 nm,
the resistance of the first electrode 11 will decrease. Thus,
declines in conversion efficiency due to increases in resistance
can be suppressed. At thicknesses of not more than 300 nm,
flexibility of the first electrode 11 can be maintained. Thus,
cracking of the first electrode 11 can be suppressed.
[0070] The first electrode 11 is, for example, a single layer. The
first electrode 11 may, for example, include a plurality of films.
The plurality of films are stacked on each other. In this plurality
of films, work functions may, for example, be different from each
other.
[0071] The flattening layer 34 is, for example, in contact with the
first electrode 11. The flattening layer 34 may, for example,
include a mixture of poly(ethylene dioxythiophene) and poly(styrene
sulfonic acid) (PEDOT:PSS). The flattening layer 34 may, for
example, include a polythiophene polymer. The flattening layer 34
includes, for example, a conductive ink.
[0072] The second layer 60 includes, for example, at least one of
N,N'-bis(3-methylphenyl)-N, N'-diphenylbenzidine (TPD), or
tris(4-carbazoyl-9-yl-phenyl)amine (TCTA). In the embodiment, the
material of the second layer 60 is not limited.
[0073] The photoelectric conversion layer 30 may, for example,
include a donor material and an acceptor material. This donor
material includes at least one of coumarin, quinacridone, or
subphthalocyanine. This acceptor material includes, for example, at
least one of fullerene (C60), perylene, or phthalocyanine.
[0074] The first layer 50 includes the compounds of formulas (1) to
(5) above. A thickness of the first layer 50 is, for example,
preferably not less than 3 and not more than 10 nm.
[0075] The second electrode 12 includes, for example, a conductive
metal oxide film. For example, the second electrode 12 includes,
for example, at least one oxide of indium, zinc, or tin. The second
electrode 12 may include, for example, a conductive metal thin
film. The second electrode 12 may, for example, include at least
one of aluminum, silver, or gold. The second electrode 12 may
include a compound. The compound includes at least one oxide
including indium, zinc, or tin. The second electrode 12 may, for
example, include an alloy. The alloy may include, for example, at
least one of lithium-aluminum alloy, lithium-magnesium alloy,
lithium-indium alloy, magnesium-silver alloy, magnesium-indium
alloy, magnesium-aluminum alloy, indium-silver alloy, or
calcium-aluminum alloy. The material of the second electrode 12 is
not limited.
[0076] A thickness of the second electrode 12 is, for example,
preferably not less than 10 and not more than 150 nm. At
thicknesses of not less than 10 nm, low resistance, for example,
can be obtained. At thicknesses of not more than 150 nm, time to
form the second electrode 12 will be short. Thus, damage to the
other layers at the time of film formation can be suppressed.
[0077] The second electrode 12 is, for example, a single layer. The
second electrode 12 may include, for example, a plurality of films.
The plurality of films are stacked on each other. In this plurality
of films, work functions may, for example, be different from each
other. Hereinafter, an example of a manufacturing method of the
photoelectric conversion device 110 will be described.
[0078] A transparent conductive film of ITO or the like as the
first electrode 11 is formed via a sputtering method on a glass
substrate that becomes the base body 10s. At least one of a vacuum
deposition method, a sputtering method, an ion plating method, a
plating method, or a coating method is used, for example, in the
forming of the first electrode 11.
[0079] A film of a conductive material of PEDOT:PSS or the like
that becomes the flattening layer 34 is formed on the first
electrode 11. The forming of the film is performed, for example,
via a spin coating method or the like. Then, the film is subjected
to drying by heating using a hot plate or the like. Thus, the
flattening layer 34 is obtained. The solution to be coated may be
filtered beforehand using a filter.
[0080] A film of, for example, TPD is formed as the second layer 60
on the flattening layer 34 via a vacuum deposition method. At least
one of a vacuum deposition method or a coating method is used, for
example, in the forming of the second layer 60.
[0081] A film of, for example, subphthalocyanine that becomes the
photoelectric conversion layer 30 is formed on the second layer 60
via a vacuum deposition method. At least one of a vacuum deposition
method or a coating method is used, for example, in the forming of
the film that becomes the photoelectric conversion layer 30.
[0082] The first layer 50 is formed on the photoelectric conversion
layer 30. At least one of a vacuum deposition method or a coating
method is used, for example, in the forming of the first layer
50.
[0083] A film of, for example, aluminum that becomes the second
electrode 12 is formed on the first layer 50 via a vacuum
deposition method. At least one of a vacuum deposition method, a
sputtering method, an ion plating method, a plating method, or a
coating method is used in the forming of the second electrode 12.
Hence, the photoelectric conversion device 110 is formed.
[0084] In the example shown in FIG. 1, the first electrode 11 is
disposed between the base body 10s and the flattening layer 34. In
the embodiment, the second electrode 12 is disposed between the
base body 10s and the first layer 50.
[0085] In the embodiment, the base body 10s may be omitted. In the
embodiment, the flattening layer 34 may be omitted. In the
embodiment, the second layer 60 may be omitted.
[0086] In the embodiment, the material of the second electrode 12
may be the identical to or different from the material of the first
electrode 11. For example, the first electrode 11 may include ITO
and the second electrode 12 may include ITO.
[0087] For example, in the embodiment, the work function of the
second electrode 12 is smaller than the work function of the first
electrode 11. The second electrode 12 is, for example,
aluminum.
[0088] The photoelectric conversion device 110 according to the
embodiment is, for example, used in a sensor.
[0089] Examples of the sensor include organic stacked CMOS image
sensors. The process of fabricating this sensor includes a heating
process. Thermal stability of organic photoelectric conversion
devices is insufficient and characteristics (e.g. conversion
efficiency and the like) thereof are prone to degrading as a result
of heating. Thus, improvements in the thermal stability of organic
photoelectric conversion devices are desired.
[0090] In the embodiment, the compound represented by formula (1)
above is used as the first layer 50. Thus, high thermal stability
can be obtained in the photoelectric conversion device.
Additionally, high thermal stability can be obtained in a
solid-state imaging device.
Second Embodiment
[0091] The embodiment relates to an imaging device. The imaging
device is, for example, a solid-state imaging device.
[0092] FIG. 3 is a schematic cross-sectional view illustrating an
imaging device according to a second embodiment.
[0093] As shown in FIG. 3, an imaging device 210 includes a
plurality of pixel regions 80. The plurality of pixel regions 80
includes, for example, a first pixel region 81 and a second pixel
region 82. The second pixel region 82 is juxtaposed with the first
pixel region 81 in a direction intersecting the Z-axis direction
(in this example, the X-axis direction).
[0094] The number of the pixel regions 80 may, for example, be 4 or
more. The plurality of pixel regions 80 may, for example, be
juxtaposed along the X-axis direction and the Y-axis direction. The
imaging device 210 includes a support substrate 13, an interconnect
portion 14, a first photoelectric conversion portion 15, a second
photoelectric conversion portion 16, a color filter portion 17, and
a microlens portion 18.
[0095] The microlens portion 18 is separated in the Z-axis
direction from the support substrate 13. The interconnect portion
14 is provided between the support substrate 13 and the microlens
portion 18. The first photoelectric conversion portion 15 is
provided between the interconnect portion 14 and the microlens
portion 18. The second photoelectric conversion portion 16 is
provided between the first photoelectric conversion portion 15 and
the microlens portion 18. The color filter portion 17 is provided
between the second photoelectric conversion portion 16 and the
microlens portion 18.
[0096] In the imaging device 210, a surface where the microlens
portion 18 is provided becomes a light receiving surface 85. Light
L1 enters the light receiving surface 85.
[0097] The support substrate 13 supports the interconnect portion
14. A semiconductor substrate, for example, is used for the support
substrate 13. A silicon (Si) substrate, for example, is used for
the semiconductor substrate.
[0098] The interconnect portion 14 is provided on a light receiving
surface 85 side of the support substrate 13. In this example, an
adhesive layer 19 is provided between the interconnect portion 14
and the support substrate 13.
[0099] The interconnect portion 14 includes, for example, an
insulating layer 20, a multilayer interconnection 21, and a read
transistor 22.
[0100] The insulating layer 20 is provided between the adhesive
layer 19 and the first photoelectric conversion portion 15. In this
example, the insulating layer 20 is, for example, in contact with
the adhesive layer 19 and the first photoelectric conversion
portion 15. The insulating layer 20 includes, for example, silicon
oxide (SiO.sub.2).
[0101] The multilayer interconnection 21 is provided within the
insulating layer 20. For example, a plurality of multilayer
interconnections 21 are provided. One of the plurality of
multilayer interconnections 21 is disposed in the first pixel
region 81. Another of the plurality of multilayer interconnections
21 is disposed in the second pixel region 82.
[0102] A plurality of read transistors 22 are provided. One of the
plurality of read transistors 22 is disposed in the first pixel
region 81. Another of the plurality of read transistors 22 is
disposed in the second pixel region 82.
[0103] The one of the plurality of multilayer interconnections 21
is electrically connected to the one of the plurality of read
transistors 22. The another of the plurality of multilayer
interconnections 21 is electrically connected to the another of the
plurality of read transistors 22.
[0104] As described later, a plurality of storage diodes 26 are
provided. The one of the plurality of multilayer interconnections
21 is electrically connected to one of the plurality of storage
diodes 26. The another of the plurality of multilayer
interconnections 21 is electrically connected to another of the
plurality of storage diodes 26.
[0105] Each of the plurality of multilayer interconnections 21 is
electrically connected to a peripheral circuit (not shown).
[0106] The multilayer interconnections 21 output electric charges
stored in photodiodes 23 (described later) and the storage diodes
26 (described later) as signals to the peripheral circuits (not
shown).
[0107] The multilayer interconnections 21 include, for example, at
least one of copper (Cu), titanium (Ti), molybdenum (Mo), or
tungsten (W). The multilayer interconnections 21 may, for example,
include a high melting point metal. The multilayer interconnections
21 include, for example, at least one of titanium silicide (TiSi),
molybdenum silicide (MoSi), or tungsten silicide (WSi). The
multilayer interconnections 21 may, for example, include a silicide
of a high melting point metal.
[0108] The read transistor 22 is provided on a surface of the
interconnect portion 14 on the first photoelectric conversion
portion 15 side. A plurality of read transistors 22 are provided.
One of the plurality of read transistors 22 is provided in the
first pixel region 81. Another of the plurality of read transistors
22 is provided in the second pixel region 82. The one of the
plurality of read transistors 22 controls movement of the electric
charge stored in one of the plurality of photodiodes 23, for
example.
[0109] The first photoelectric conversion portion 15 is, for
example, in contact with the interconnect portion 14 and the second
photoelectric conversion portion 16. The first photoelectric
conversion portion 15 includes a storage diode 26, a first
conductivity type semiconductor region 27, a second conductivity
type semiconductor region 28, an insulating film 29, a contact plug
25, and an optically transparent insulating layer 24.
[0110] For example, the first conductivity type is p-type and the
second conductivity type is n-type. In this case, the first
conductivity type semiconductor region 27 is, for example, a p-type
single crystal Si substrate. The second conductivity type
semiconductor region 28 is, for example, an n-type impurity
diffusion region. In the embodiment, the first conductivity type
may be n-type and the second conductivity type may be p-type.
[0111] A plurality of the photodiodes 23 are formed by the first
conductivity type semiconductor region 27 and the second
conductivity type semiconductor region 28. In this example, a
plurality of second conductivity type semiconductor regions 28 are
provided. A first photodiode 23a is formed by one of the plurality
of second conductivity type semiconductor regions 28 and the first
conductivity type semiconductor region 27. A second photodiode 23b
is formed by another of the plurality of second conductivity type
semiconductor regions 28 and the first conductivity type
semiconductor region 27.
[0112] The plurality of photodiodes 23 are arranged in an array.
The first photodiode 23a is provided in the first pixel region 81.
The second photodiode 23b is provided in the second pixel region
82. Each of the plurality of photodiodes 23 absorbs and
photoconverts light transmitted through the photoelectric
conversion layer 30 (described later). The light that enters one of
the plurality of photodiodes 23 is, for example, one of the three
primary colors of light.
[0113] A P-N junction face is formed between the first conductivity
type semiconductor region 27 and the second conductivity type
semiconductor region 28.
[0114] The first conductivity type semiconductor region 27 is
provided between the interconnect portion 14 and the optically
transparent insulating layer 24. The first conductivity type
semiconductor region 27 is, for example, in contact with the
interconnect portion 14 and the optically transparent insulating
layer 24. Si including p-type impurities is, for example, used for
the first conductivity type semiconductor region 27. The p-type
impurities include, for example, boron or the like. The p-type
impurities are doped in the Si. The second conductivity type
semiconductor region 28 is in contact with the first conductivity
type semiconductor region 27. Si including n-type impurities is,
for example, used for the second conductivity type semiconductor
region 28. The n-type impurities include, for example, phosphorus
or the like. The n-type impurities are, for example, ion implanted
into the Si.
[0115] The optically transparent insulating layer 24 is provided
between the first conductivity type semiconductor region 27 and the
second photoelectric conversion portion 16. The optically
transparent insulating layer 24 is, for example, in contact with
the first conductivity type semiconductor region 27 and the second
photoelectric conversion portion 16. The optically transparent
insulating layer 24 transmits at least a portion of the light
transmitted through the second photoelectric conversion portion 16
and causes that light to enter the first photoelectric conversion
portion 15. The optically transparent insulating layer 24
electrically insulates the photoelectric conversion layer 30
(described later) from the first conductivity type semiconductor
region 27. The optically transparent insulating layer 24 includes,
for example, SiO.sub.2 or the like.
[0116] The storage diodes 26 are provided between the interconnect
portion 14 and the second photoelectric conversion portion 16. The
contact plug 25 is provided between the storage diode 26 and the
second photoelectric conversion portion 16. The insulating film 29
is provided between the contact plug 25 and the first conductivity
type semiconductor region 27. The insulating film 29 includes, for
example, a silicon nitride (SiN) film.
[0117] The contact plug 25 extends in the Z-axis direction within
the first conductivity type semiconductor region 27. The contact
plug 25 is electrically connected between the interconnect portion
14 and the second photoelectric conversion portion 16. A plurality
of contact plugs 25 are provided. Each of the plurality of contact
plugs 25 is provided corresponding to each of the plurality of
pixel regions 80. One of the photodiodes 23 is provided between the
plurality of contact plugs 25.
[0118] The contact plug 25 electrically connect the first electrode
11 (described later; e.g. a lower transparent electrode) and the
storage diode 26. For example, the electric charge collected by the
first electrode 11 (the lower transparent electrode) is moved to
the storage diode 26 via the contact plug 25. The contact plugs 25
include, for example, Si or the like.
[0119] The storage diodes 26 temporarily store the electric charge
collected by the first electrode 11 (the lower transparent
electrode). A floating diffusion (not shown) is provided within the
first conductivity type semiconductor region 27. The stored
electric charge is sent to the floating diffusion from the storage
diodes 26 and is converted to an electrical signal.
[0120] The second photoelectric conversion portion 16 is provided
between the first photoelectric conversion portion 15 and the color
filter portion 17. The second photoelectric conversion portion 16
is, for example, in contact with the first photoelectric conversion
portion 15 and the color filter portion 17. The second
photoelectric conversion portion 16 includes the first electrode 11
(e.g. the lower transparent electrode), the flattening layer 34,
the second layer 60 (e.g. the electron blocking layer), the
photoelectric conversion layer 30, the first layer 50 (e.g. the
hole blocking layer), and the second electrode 12 (e.g. an upper
transparent electrode).
[0121] The first electrode 11 (the lower transparent electrode) is
provided on a surface on a side of the light receiving surface 85
of the optically transparent insulating layer 24. A plurality of
first electrodes 11 are provided. Each of the plurality of first
electrodes 11 is provided in each of the plurality of pixel regions
80. At least a portion of one of the first electrodes 11 overlaps
one of the plurality of photodiodes 23 in the Z-axis direction. For
example, the plurality of first electrodes 11 include a first
electrode 11a and a first electrode 11b. The first electrode 11a
overlaps the first photodiode 23a in the Z-axis direction. The
first electrode 11b overlaps the second photodiode 23b in the
Z-axis direction. The first electrode 11a is provided in the first
pixel region 81. The first electrode 11b is provided in the second
pixel region 82. The first electrode 11 (the lower transparent
electrode) includes, for example, ITO or a similar optically
transparent, conductive material.
[0122] The flattening layer 34 is provided between the first
electrode 11 and the photoelectric conversion layer 30, and between
the optically transparent insulating layer 24 and the photoelectric
conversion layer 30. The flattening layer 34 is, for example, in
contact with the first electrode 11, the photoelectric conversion
layer 30, and the optically transparent insulating layer 24. The
flattening layer 34 flattens, for example, irregularities in the
surfaces of the first electrode 11 (the lower transparent
electrode) and the optically transparent insulating layer 24.
[0123] The second electrode 12 (the upper transparent electrode) is
provided on a surface on a side of the light receiving surface 85
of the photoelectric conversion layer 30. The second electrode 12
overlaps the plurality of photodiodes 23 in the Z-axis direction.
In this example, the second electrode 12 is continuous in the
plurality of pixel regions 80. The second electrode 12 (the upper
transparent electrode) applies bias voltage supplied from outside
to the photoelectric conversion layer 30.
[0124] As a result of the application of the bias voltage by the
second electrode 12 (the upper transparent electrode), electric
charges are generated in the photoelectric conversion layer 30,
corresponding to the light that has entered the photoelectric
conversion layer 30. The generated electric charges are collected
in each of the plurality of first electrodes 11 (the lower
transparent electrodes). The second electrode 12 (the upper
transparent electrode) includes, for example, ITO or a similar
optically transparent, conductive material.
[0125] The color filter portion 17 is provided between the second
photoelectric conversion portion 16 and the microlens portion 18.
The color filter portion 17 is, for example, in contact with the
second photoelectric conversion portion 16 and the microlens
portion 18. The color filter portion 17 includes a protective film
41, a flattening film 42, and a plurality of color filters 43. The
plurality of color filters include, for example, a first color
filter 43a and a second color filter 43b.
[0126] The protective film 41 is provided on a surface on a side of
the light receiving surface 85 of the second electrode 12 (the
upper transparent electrode). The protective film 41 is, for
example, in contact with the second electrode 12. The protective
film 41 is continuous in, for example, the first pixel region 81
and the second pixel region 82. The protective film 41 is, for
example, insulative. The protective film 41 includes, for example,
aluminum oxide (Al.sub.2O.sub.3).
[0127] The flattening film 42 is provided between the protective
film 41 and the microlens portion 18. The flattening film 42 is,
for example, in contact with the protective film 41 and the
microlens portion 18. The flattening film 42 includes, for example,
silicon dioxide or the like.
[0128] The first color filter 43a and the second color filter 43b
are provided within the flattening film 42. At least a portion of
the first color filter 43a overlaps the first electrode 11a and
also overlaps the first photodiode 23a in the Z-axis direction. At
least a portion of the second color filter 43b overlaps the first
electrode 11b and also overlaps the second photodiode 23b in the
Z-axis direction. The first color filter 43a absorbs light of a
particular wavelength region and transmits light of other
wavelength regions. The second color filter 43b absorbs light of a
particular wavelength region and transmits light of other
wavelength regions. The wavelength of light that the second color
filter 43b absorbs differs from the wavelength of light that the
first color filter 43a absorbs.
[0129] For example, the first color filter 43a absorbs blue light
and transmits green light and red light. The second color filter
43b absorbs red light and transmits blue light and green light. In
the embodiment, the wavelength of light that the second color
filter 43b absorbs may, for example, be the same as the wavelength
of light that the first color filter 43a absorbs.
[0130] By appropriately selecting the wavelength regions of light
that the first color filter 43a and the second color filter 43b
absorb, the wavelength region of the light that enters the
photoelectric conversion layer 30 is selected. The microlens
portion 18 is provided on a side of the light receiving surface 85
of the color filter portion 17. A plurality of microlenses are
provided. The microlens portion 18 includes a first microlens 18a,
a second microlens 18b, and the like. The first microlens 18a
overlaps, for example, the first photodiode 23a in the Z-axis
direction. The second microlens 18b overlaps, for example, the
second photodiode 23b in the Z-axis direction. A shape in the X-Y
plane of one of the microlenses is, for example, substantially a
circle. The light L1 that enters is condensed by the microlenses.
An optical center of each of the plurality of microlenses is
located, for example, at a center of each of the plurality of
photodiodes 23. An area in the X-Y plane of one of the microlenses
is, for example, larger than an area of the light receiving surface
of one of the plurality of photodiodes 23.
[0131] In the imaging device 210, the compound of formula (1) above
is used for the first layer 50. Thus, for example, an imaging
device can be obtained for which thermal stability can be
improved.
[0132] The imaging device 210 illustrated in FIG. 3 is, for
example, a back-illuminated photoelectric conversion device. In the
embodiment, the imaging device 210 may be a surface-illuminated
photoelectric conversion device.
[0133] In the preceding, the "three primary colors of light" are
the three colors of blue, green, and red. The wavelength region of
the blue light (light of the blue wavelength region) is, for
example, not less than 400 and not more than 500 nm. The wavelength
region of the green light (light of the green wavelength region)
is, for example, not less than 500 and not more than 600 nm. The
wavelength region of the red light (light of the red wavelength
region) is, for example, not less than 600 and not more than 700
nm.
[0134] As described previously, the imaging device 210 includes any
photoelectric conversion device (e.g. the photoelectric conversion
device 110) according to the first embodiment, and the
photoelectric conversion layer of variations thereof.
[0135] For example, a plurality of photoelectric conversion devices
are provided. For example, a first photoelectric conversion device
110a, a second photoelectric conversion device 110b, and the like
are provided. The first photoelectric conversion device 110a
includes, for example, the first electrode 11a, a portion of the
second electrode 12, a portion of the photoelectric conversion
layer 30, and a portion of the first layer 50. The second
photoelectric conversion device 110b includes, for example, the
first electrode 11b, a portion of the second electrode 12, a
portion of the photoelectric conversion layer 30, and a portion of
the first layer 50.
[0136] The second electrode 12 of one of the plurality of
photoelectric conversion devices (e.g. a first photoelectric
conversion device 110a) is separated from the first electrode 11
(e.g. the first electrode 11a) of that one of the plurality of
photoelectric conversion devices along a first direction (the
Z-axis direction). At least a portion of the plurality of
photoelectric conversion devices is juxtaposed along a second
direction (e.g. the X-axis direction, the Y-axis direction, or the
like) intersecting with the first direction. In the imaging device
210 according to the embodiments, the photodiodes 23 are further
provided. As described previously, the second electrode 12 is
separated along the first direction (the Z-axis direction) from the
first electrode 11. The photodiodes 23 overlap the photoelectric
conversion device 110 in the first direction. For example, the
first photodiode 23a overlaps the first photoelectric conversion
device 110a in the first direction. For example, the second
photodiode 23b overlaps the second photoelectric conversion device
110b in the first direction.
[0137] FIG. 4 and FIG. 5 are perspective views illustrating devices
that include the imaging device according to the second embodiment.
FIG. 4 shows a CMOS image sensor 311. The CMOS image sensor 311 is,
for example, a Full HD (1080 p) type sensor. FIG. 5 shows a CMOS
image sensor 312. The CMOS image sensor 312 is, for example, a VGA
type sensor.
[0138] The CMOS image sensors 311 and 312 each include a
solid-state imaging element 211 and a mold resin 311r. The
solid-state imaging element 211 corresponds to the imaging device
(and variations thereof) according to the embodiments.
[0139] The solid-state imaging element 211 includes a light
receiving surface 85 and portions other than the light receiving
surface 85. The mold resin 311r covers the portions other than the
light receiving surface 85 of the solid-state imaging element 211.
The solid-state imaging element 211 and the mold resin 311r are
integrated. For example, the solid-state imaging element 211 is
protected from external stress, moisture, contaminants, and the
like.
[0140] The CMOS image sensors 311 and 312 are, for example, used
for an imaging unit of a camera. The camera is, for example, a
digital camera. The camera includes, for example, surveillance
cameras, web cameras that use the internet, and the like. The
camera may, for example, be mounted on a mobile terminal. The
mobile terminal includes, for example, mobile phones. The mobile
phones include, for example, smart phones (multifunction mobile
phones). The mobile terminal also includes, for example, personal
computers.
[0141] FIG. 6 and FIG. 7 are plan views illustrating moving bodies
that include the imaging device according to the second
embodiment.
[0142] FIG. 6 shows an example of a moving body 331 on which a
camera 331c is mounted. The camera 331c is mounted, for example, at
a front end portion of the moving body 331. The camera 331c
captures images in front of the moving body 331. FIG. 7 shows an
example of a moving body 332 on which a camera 331c is mounted. The
camera 331c is mounted, for example, at a back end portion of the
moving body 332. The camera 331c captures images behind the moving
body 331.
[0143] For example, the CMOS image sensor 311 or the CMOS image
sensor 312 described previously is used for the camera 331c.
[0144] The moving body 331 and the moving body 332 are, for
example, vehicles. The moving body 331 and the moving body 332 may
be airplanes, helicopters, boats, or the like.
[0145] Each of the moving body 331 and the moving body 332 further
include a display 331d. The display 331d displays images captured
by the camera 331c. The display 331d is, for example, provided in
front of the driver's seat of each of the moving body 331 and the
moving body 332.
[0146] In cases where the camera 331c is mounted at the front end
portion of the moving body 331, a user checks images captured by
the camera 331c on the display 331d. For example, when parking,
there is a region that the user cannot directly see. In this
example, the user can check this region using the display 331d.
[0147] In cases where the camera 331c is mounted at the back end
portion of the moving body 332, a user checks images captured by
the camera 331c on the display 331d. In this example, the user can
check behind.
[0148] FIG. 8 and FIG. 9 are plan views illustrating devices that
include the imaging device according to the second embodiment. FIG.
8 shows an example of an electronic device 351. The electronic
device 351 is, for example, a smart phone (a multifunction mobile
phone). FIG. 9 shows an example of another electronic device 352.
The electronic device 352 is, for example, a tablet computer.
[0149] Each of the electronic device 351 and the electronic device
352 includes a camera 331c and a display panel 351t. The CMOS image
sensor 311 or the CMOS image sensor 312 described previously is
used for the camera 331c. The display panel 351t may have touch
input functions. The display panel 351t may, for example, have
touch panel functions.
[0150] The camera 331c is provided, for example, at an edge portion
of a front face of the electronic device (the electronic device 351
or the electronic device 352). The camera 331c captures images on a
front face side of the electronic device. The camera 331c may be
provided, for example, on a back face of the electronic device (the
electronic device 351 or the electronic device 352). The camera
331c may capture images on a back face side of the electronic
device.
[0151] The display panel 351t is provided at, for example, the
center of the front face of the electronic device. The display
panel 351t displays images captured by the camera 331c.
[0152] According to the embodiments, a photoelectric conversion
device capable of improving thermal stability and an imaging device
can be provided.
[0153] In the specification of the application, "perpendicular" and
"parallel" refer to not only strictly perpendicular and strictly
parallel but also include, for example, the fluctuation due to
manufacturing processes, etc. It is sufficient to be substantially
perpendicular and substantially parallel.
[0154] Hereinabove, exemplary embodiments of the invention are
described with reference to specific examples. However, the
embodiments of the invention are not limited to these specific
examples. For example, one skilled in the art may similarly
practice the invention by appropriately selecting specific
configurations of components included in photoelectric conversion
devices such as base bodies, electrodes, flattening layers, first
layers, second layers, photoelectric conversion layers, and
included in imaging devices such as interconnection portions, first
photoelectric conversion portions, second photoelectric conversion
portions, color filters, microlens potions, etc., from known art.
Such practice is included in the scope of the invention to the
extent that similar effects thereto are obtained.
[0155] Further, any two or more components of the specific examples
may be combined within the extent of technical feasibility and are
included in the scope of the invention to the extent that the
purport of the invention is included.
[0156] Moreover, all photoelectric conversion devices and imaging
devices practicable by an appropriate design modification by one
skilled in the art based on the photoelectric conversion devices
and imaging devices described above as embodiments of the invention
also are within the scope of the invention to the extent that the
spirit of the invention is included.
[0157] Various other variations and modifications can be conceived
by those skilled in the art within the spirit of the invention, and
it is understood that such variations and modifications are also
encompassed within the scope of the invention.
[0158] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the inventions. Indeed, the novel
embodiments described herein may be embodied in a variety of other
forms; furthermore, various omissions, substitutions and changes in
the form of the embodiments described herein may be made without
departing from the spirit of the inventions. The accompanying
claims and their equivalents are intended to cover such forms or
modifications as would fall within the scope and spirit of the
invention.
* * * * *