U.S. patent application number 15/364591 was filed with the patent office on 2017-03-16 for power storage element, manufacturing method thereof, and power storage device.
The applicant listed for this patent is Semiconductor Energy Laboratory Co., Ltd.. Invention is credited to Kazutaka KURIKI, Tamae MORIWAKA, Ryota TAJIMA.
Application Number | 20170077151 15/364591 |
Document ID | / |
Family ID | 49212122 |
Filed Date | 2017-03-16 |
United States Patent
Application |
20170077151 |
Kind Code |
A1 |
KURIKI; Kazutaka ; et
al. |
March 16, 2017 |
POWER STORAGE ELEMENT, MANUFACTURING METHOD THEREOF, AND POWER
STORAGE DEVICE
Abstract
Disclosed is a power storage element including a positive
electrode current collector layer and a negative electrode current
collector layer which are arranged on the same plane and can be
formed through a simple process. The power storage element further
includes a positive electrode active material layer on the positive
electrode current collector layer; a negative electrode active
material layer on the negative electrode current collector layer;
and a solid electrolyte layer in contact with at least the positive
electrode active material layer and the negative electrode active
material layer. The positive electrode active material layer and
the negative electrode active material layer are formed by
oxidation treatment.
Inventors: |
KURIKI; Kazutaka; (Ebina,,
JP) ; TAJIMA; Ryota; (Isehara, JP) ; MORIWAKA;
Tamae; (Isehara, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Semiconductor Energy Laboratory Co., Ltd. |
Atsugi-shi |
|
JP |
|
|
Family ID: |
49212122 |
Appl. No.: |
15/364591 |
Filed: |
November 30, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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14744151 |
Jun 19, 2015 |
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15364591 |
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13797104 |
Mar 12, 2013 |
9070950 |
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14744151 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01G 11/08 20130101;
H01M 2300/0065 20130101; H01L 29/66969 20130101; H01L 29/7869
20130101; H01M 2300/0082 20130101; H01G 11/56 20130101; H01M
10/0562 20130101; Y02P 70/50 20151101; H01G 11/84 20130101; H01G
11/46 20130101; H01M 10/0565 20130101; Y02E 60/13 20130101; H01L
27/1225 20130101; H01L 27/124 20130101; H01L 27/1259 20130101; Y02E
60/10 20130101; H01L 27/1248 20130101; H01L 27/1255 20130101; H01M
10/0585 20130101; H01M 10/052 20130101; H01L 29/24 20130101; H01M
2300/0071 20130101; Y10T 29/49115 20150115; H01L 27/13
20130101 |
International
Class: |
H01L 27/13 20060101
H01L027/13; H01M 10/0565 20060101 H01M010/0565; H01L 29/24 20060101
H01L029/24; H01L 29/786 20060101 H01L029/786; H01G 11/84 20060101
H01G011/84; H01G 11/56 20060101 H01G011/56; H01G 11/08 20060101
H01G011/08; H01L 27/12 20060101 H01L027/12; H01L 29/66 20060101
H01L029/66; H01M 10/0562 20060101 H01M010/0562; H01G 11/46 20060101
H01G011/46 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 26, 2012 |
JP |
2012-069536 |
Claims
1. (canceled)
2. A semiconductor device comprising: a transistor comprising: a
gate electrode and a semiconductor film with a gate insulating film
therebetween; and source and drain electrodes electrically
connected to the semiconductor film; a power storage element
comprising: a pair of electrodes; a first layer over and in contact
with the pair of electrodes; and a second layer over the first
layer; and a wiring, wherein: the first layer comprises a solid
electrolyte, the second layer comprises a carrier supplying
material, and one of the source and drain electrodes is
electrically connected to one of the pair of electrodes through the
wiring.
3. The semiconductor device according to claim 2, further
comprising: an interlayer insulating film covering the transistor,
wherein the pair of electrodes is on the interlayer insulating
film.
4. The semiconductor device according to claim 2, wherein the power
storage element is positioned over the transistor.
5. The semiconductor device according to claim 2, wherein the
semiconductor film includes a metal oxide containing In.
6. The semiconductor device according to claim 2, wherein: one of
the pair of electrodes comprises a first metal and an oxide
thereof, and the other of the pair of electrodes comprises a second
metal and an oxide thereof.
7. The semiconductor device according to claim 6, wherein: the
first metal is V or Mn, and the second metal is one of Nb, Cu, Co,
Ni, Fe, W, Mo and Ta.
8. The semiconductor device according to claim 6, wherein: the
oxide of the first metal covers upper and side surfaces of the
first metal, and the oxide of the second metal covers upper and
side surfaces of the second metal.
9. The semiconductor device according to claim 2, wherein the solid
electrolyte is one of a sulfide-based solid electrolyte containing
Li, an oxide-based solid electrolyte containing Li, and a polymer
solid electrolyte.
10. The semiconductor device according to claim 2, wherein the
carrier supplying material is one of Li, Na, K, Ca, Sr, Ba, Be and
Mg.
11. The semiconductor device according to claim 2, wherein: the
wiring comprises a first wiring layer and a second wiring layer
over a surface of the first wiring layer, and the first wiring
layer contains a metal element, and the second wiring layer
contains an oxide of the metal element.
12. The semiconductor device according to claim 11, wherein the
metal element is Al.
13. An electrical device comprising the semiconductor device
according to claim 2.
14. A semiconductor device comprising: a transistor comprising: a
gate electrode and a semiconductor film with a gate insulating film
therebetween; and source and drain electrodes electrically
connected to the semiconductor film; a first power storage element
and a second power storage element each comprising: a pair of
electrodes; a first layer over and in contact with the pair of
electrodes; and a second layer over the first layer; and a first
wiring and a second wiring, wherein: the first layer comprises a
solid electrolyte, the second layer comprises a carrier supplying
material, one of the source and drain electrodes is electrically
connected to one of the pair of electrodes of the first power
storage element and one of the pair of electrodes of the second
power storage element through the first wiring, and the other of
the pair of electrodes of the first power storage element and the
other of the pair of electrodes of the second power storage element
are electrically connected to each other through the second
wiring.
15. The semiconductor device according to claim 14, further
comprising: an interlayer insulating film covering the transistor,
wherein in each of the first power storage element and the second
power storage element, the pair of electrodes is on the interlayer
insulating film.
16. The semiconductor device according to claim 14, wherein the
first power storage element and the second power storage element
are positioned over the transistor.
17. The semiconductor device according to claim 14, wherein the
semiconductor film includes a metal oxide containing In.
18. The semiconductor device according to claim 14, wherein in each
of the first power storage element and the second power storage
element: one of the pair of electrodes comprises a first metal and
an oxide thereof, and the other of the pair of electrodes comprises
a second metal and an oxide thereof.
19. The semiconductor device according to claim 18, wherein: the
first metal is V or Mn, and the second metal is one of Nb, Cu, Co,
Ni, Fe, W, Mo and Ta.
20. The semiconductor device according to claim 18, wherein: the
oxide of the first metal covers upper and side surfaces of the
first metal, and the oxide of the second metal covers upper and
side surfaces of the second metal.
21. The semiconductor device according to claim 14, wherein in each
of the first power storage element and the second power storage
element, the solid electrolyte is one of a sulfide-based solid
electrolyte containing Li, an oxide-based solid electrolyte
containing Li, and a polymer solid electrolyte.
22. The semiconductor device according to claim 14, wherein in each
of the first power storage element and the second power storage
element, the carrier supplying material is one of Li, Na, K, Ca,
Sr, Ba, Be and Mg.
23. The semiconductor device according to claim 14, wherein: the
first wiring and the second wiring each comprise a first wiring
layer and a second wiring layer over a surface of the first wiring
layer, and the first wiring layer contains a metal element, and the
second wiring layer contains an oxide of the metal element.
24. The semiconductor device according to claim 23, wherein the
metal element is Al.
25. An electrical device comprising the semiconductor device
according to claim 14.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 14/744,151, filed Jun. 19, 2015, now allowed, which is a
continuation of U.S. application Ser. No. 13/797,104, filed Mar.
12, 2013, now U.S. Pat. No. 9,070,950, which claims the benefit of
a foreign priority application filed in Japan as Serial No.
2012-069536 on Mar. 26, 2012, all of which are incorporated by
reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a power storage element, a
manufacturing method of the power storage element, and a power
storage device.
[0004] A power storage element in this specification refers to any
element which has a function of storing power, and a power storage
device in this specification refers to any device which has a
function of storing power and in which a plurality of power storage
elements are arranged in a plane.
[0005] 2. Description of the Related Art
[0006] In recent years, a variety of power storage devices such as
lithium secondary batteries, lithium-ion capacitors, and air cells
have been developed. In particular, a lithium secondary battery in
which charge and discharge are performed by transfer of lithium
ions between a positive electrode and a negative electrode has been
attracting attention as a secondary battery with high output and
high energy density.
[0007] A lithium secondary battery refers to a secondary battery
where lithium ions are used as carrier ions. Examples of carrier
ions which can be used instead of lithium ions include alkali-metal
ions such as sodium ions and potassium ions; alkaline-earth metal
ions such as calcium ions, strontium ions, and barium ions;
beryllium ions; and magnesium ions.
[0008] Many of conventional electrolytes of lithium secondary
batteries are liquid electrolytes which have high lithium
conductivity at room temperature, and organic electrolytic
solutions are used in many of commercially available lithium
secondary batteries. However, lithium secondary batteries which
contain organic electrolytic solutions have risks of leaking the
electrolytic solutions and catching fire; therefore, an
all-solid-state battery which contains a solid electrolyte and has
a high level of safety has been actively researched (see Patent
Document 1).
[0009] Further, a secondary battery where a positive electrode and
a negative electrode are formed over one of surfaces of a substrate
and a solid electrolyte is provided between the positive electrode
and the negative electrode has been developed (see Patent Document
2).
REFERENCE
[Patent Document 1] Japanese Published Patent Application No.
2007-123081
[Patent Document 2] Japanese Published Patent Application No.
2006-147210
SUMMARY OF THE INVENTION
[0010] In the above secondary battery where a positive electrode
and a negative electrode are formed over one of surfaces of a
substrate and a solid electrolyte is provided between the positive
electrode and the negative electrode, a physical short circuit
between the positive electrode and the negative electrode is
minimized and a separator is unnecessary. For this reason, the
battery can be manufactured at low cost. However, layers (e.g., a
positive electrode current collector layer, a positive electrode
active material layer, a negative electrode current collector
layer, a negative electrode active material layer, and a solid
electrolyte layer) included in the battery are stacked in order;
thus, the number of steps is large, leading to a long manufacturing
process. Accordingly, the manufacturing cost increases.
[0011] In view of the above, an object of one embodiment of the
present invention is to provide a power storage element which
includes a positive electrode and a negative electrode provided so
as to be level with each other (that is, arranged in the same
plane) and which can be formed through a simple process, a
formation method of the power storage element, and a power storage
device where a plurality of the power storage elements are arranged
so as to be level with each other.
[0012] One embodiment of the present invention is a power storage
element including a positive electrode current collector layer and
a negative electrode current collector layer which are level with
each other; a positive electrode active material layer on the
positive electrode current collector layer; a negative electrode
active material layer on the negative electrode current collector
layer; and a solid electrolyte layer in contact with at least the
positive electrode active material layer and the negative electrode
active material layer. The positive electrode active material layer
contains a metal oxide containing a metal element which is
contained in the positive electrode current collector layer. The
negative electrode active material layer contains a metal oxide
containing a metal element which is contained in the negative
electrode current collector layer.
[0013] Further, the power storage element may include a lithium
layer which overlaps with at least one of the positive electrode
active material layer and the negative electrode active material
layer.
[0014] One embodiment of the present invention is a power storage
device where a plurality of the power storage elements are arranged
so as to be level with each other. The plurality of power storage
elements are electrically connected to each other through a wiring,
thereby being connected in series or in parallel in the power
storage device.
[0015] One embodiment of the present invention may be provided with
a means for switching between series connection and parallel
connection of the power storage elements. As the switching means,
for example, a transistor may be used.
[0016] One embodiment of the present invention is an electrical
device including the above power storage element and the above
power storage device.
[0017] One embodiment of the present invention is a manufacturing
method of a power storage element. The method includes the steps of
forming a positive electrode current collector layer and a negative
electrode current collector layer so that they are level with each
other; performing oxidation treatment on the positive electrode
current collector layer and the negative electrode current
collector layer to form a positive electrode active material layer
on a surface of the positive electrode current collector layer and
a negative electrode active material layer on a surface of the
negative electrode current collector layer; forming a solid
electrolyte layer in contact with at least the positive electrode
active material layer and the negative electrode active material
layer; and forming a lithium layer overlapping with at least one of
the positive electrode active material layer and the negative
electrode active material layer. The positive electrode active
material layer contains a metal oxide containing a metal element
which is contained in the positive electrode current collector
layer. The negative electrode active material layer contains a
metal oxide containing a metal element which is contained in the
negative electrode current collector layer.
[0018] The oxidation treatment for the positive electrode current
collector layer and the negative electrode current collector layer
can be performed by oxygen plasma treatment. For an oxygen
atmosphere of the oxygen plasma treatment, an oxygen gas, a
dinitrogen monoxide gas, an ozone gas, or the like may be used. An
oxidation treatment apparatus is not particularly limited as long
as it is provided with a plasma generation mechanism; for example,
a plasma CVD apparatus or a sputtering apparatus can be used.
[0019] Alternatively, anodic oxidation treatment may be performed
for oxidation treatment. Still alternatively, heat treatment in an
oxygen atmosphere may be performed. For the oxygen atmosphere, any
of the above gases which can be used for the oxygen plasma
treatment can be used.
[0020] As the positive electrode active material layer, a layer
which contains vanadium oxide or manganese oxide may be used.
[0021] As the negative electrode active material layer, a layer
which contains niobium oxide, copper oxide, cobalt oxide, nickel
oxide, iron oxide, tungsten oxide, molybdenum oxide, or tantalum
oxide may be used.
[0022] In one embodiment of the present invention, as the solid
electrolyte layer in the power storage element or the power storage
device, a layer which contains a compound containing lithium and
sulfur, a compound containing lithium and oxygen, or lithium oxide
may be used.
[0023] Thus, according to the present invention, the oxygen
treatment performed on the positive electrode current collector
layer and the negative electrode current collector layer enables
formation of the positive electrode active material layer and the
negative electrode active material layer on the surface of the
positive electrode current collector layer and the surface of the
negative electrode current collector layer, respectively.
Accordingly, the manufacturing process can be simplified, leading
to a reduction in manufacturing cost.
[0024] According to one embodiment of the present invention, a
power storage element including a positive electrode and a negative
electrode provided so as to be level with each other and which can
be formed through a simple process, a manufacturing method of the
power storage element, and a power storage device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0025] In the accompanying drawings:
[0026] FIGS. 1A to 1C are top views and a cross-sectional view
which illustrate a power storage device of one embodiment of the
present invention;
[0027] FIGS. 2A to 2D are cross-sectional views which illustrate a
formation method of a power storage element of one embodiment of
the present invention;
[0028] FIGS. 3A to 3C are top views and a cross-sectional view
which illustrate a power storage device of one embodiment of the
present invention;
[0029] FIGS. 4A to 4D are cross-sectional views which illustrate a
formation method of a power storage element of one embodiment of
the present invention;
[0030] FIG. 5A to 5D are cross-sectional views which illustrate the
formation method of a power storage element of one embodiment of
the present invention;
[0031] FIG. 6 is a cross-sectional view which illustrates a power
storage element of one embodiment of the present invention;
[0032] FIGS. 7A and 7B are a block diagram and a circuit diagram
which illustrate a power storage device of one embodiment of the
present invention;
[0033] FIGS. 8A and 8B are circuit diagrams which illustrate a
power storage element array of one embodiment of the present
invention;
[0034] FIG. 9 illustrates electrical devices; and
[0035] FIG. 10A to 10C illustrate an electrical device.
DETAILED DESCRIPTION OF THE INVENTION
[0036] Embodiments of the present invention will be described with
reference to the drawings. Note that the present invention is not
limited to the following description and it will be readily
appreciated by those skilled in the art that modes and details can
be modified in various ways without departing from the spirit and
scope of the present invention. Therefore, the present invention
should not be construed as being limited to the description in the
embodiments. In description using the drawings for reference, in
some cases, common reference numerals are used for the same
portions in different drawings. Further, in some cases, the same
hatching patterns are applied to similar portions, and the similar
portions are not necessarily designated by reference numerals.
[0037] Note that in each drawing described in this specification,
the size, the layer thickness, or the region of each component is
exaggerated for clarity in some cases. Therefore, embodiments of
the present invention are not limited to such scales.
Embodiment 1
[0038] In this embodiment, a power storage element, a formation
method thereof, and a power storage device of one embodiment of the
present invention will be described with reference to FIGS. 1A to
1C and FIGS. 2A to 2D.
[0039] FIGS. 1A to 1C illustrate a power storage element and a
power storage device in this embodiment. FIG. 1A is a top view of a
power storage device 900 in this embodiment which shows the case
where power storage elements 200 are arranged so as to be level
with each other. FIG. 1B is a top view of the power storage element
200, and FIG. 1C is a cross-sectional view along dashed dotted line
A-B in FIG. 1B. Note that in FIG. 1B, a sealing layer 114 and the
like are omitted for simplicity.
[0040] Further, in this embodiment, a power storage element will be
described in which a vanadium layer is used as a positive electrode
current collector layer; a vanadium oxide layer is used as a
positive electrode active material layer; a niobium layer is used
as a negative electrode current collector layer; and a niobium
oxide layer is used as a negative electrode active material
layer.
[0041] Note that for convenience, a power storage device in this
specification refers to the structure where a plurality of power
storage elements are arranged so as to be level with each other.
Although FIG. 1A illustrates the case where the power storage
elements 200 are arranged in a matrix, one embodiment of the
present invention is not limited thereto. Random arrangement may be
employed and the positions of opposing positive and negative
electrodes may be changed as appropriate. Although not illustrated,
a wiring, a terminal, or the like connected to each power storage
element 200 may be provided.
[0042] The power storage element 200 in FIG. 1C includes a
substrate 100, an insulating layer 102 over the substrate 100, a
vanadium layer 104 and a niobium layer 106 which are level with
each other and are over the insulating layer 102, a vanadium oxide
layer 108 over the vanadium layer 104, a niobium oxide layer 110
over the niobium layer 106, and a solid electrolyte layer 112 in
contact with at least the vanadium oxide layer 108 and the niobium
oxide layer 110. The vanadium layer 104 and the vanadium oxide
layer 108 function as a positive electrode, and the niobium layer
106 and the niobium oxide layer 110 function as a negative
electrode. Further, a sealing layer 114 is preferably formed over
the vanadium oxide layer 108, the niobium oxide layer 110, the
solid electrolyte layer 112, and the insulating layer 102.
[0043] In FIG. 1C, a lithium layer 116 which overlaps with the
niobium oxide layer 110 is formed over the solid electrolyte layer
112. This lithium layer is for supplying lithium serving as a
carrier to the niobium oxide layer 110 serving as a negative
electrode active material in the power storage element 200 (for
predoping the niobium oxide layer 110 with lithium). Although
predoping the niobium oxide layer 110 with lithium is described
above, the vanadium oxide layer 108 may alternatively be predoped
with lithium. The lithium layer 116 is formed so as to overlap with
at least one of the vanadium oxide layer 108 and the niobium oxide
layer 110 and may be formed over the entire surface over which the
lithium layer 116 is to be formed. Further, a copper layer or a
nickel layer may be formed in contact with the lithium layer 116
(not particularly illustrated). The copper layer or the nickel
layer has a shape substantially the same as that of the lithium
layer 116. The copper layer or the nickel layer can function as a
current collector when the niobium oxide layer 110 is predoped with
lithium from the lithium layer 116.
[0044] The lithium layer 116 is formed so as to overlap with the
niobium oxide layer 110 in this manner and discharging is performed
with the niobium layer 106 and the niobium oxide layer 110 serving
as a positive electrode and the lithium layer 116 serving as a
negative electrode, whereby lithium is diffused into the niobium
oxide layer 110 so that the niobium oxide layer 110 is doped with
lithium; consequently, Li.sub.xNb.sub.2O.sub.5 (x>0) is
formed.
[0045] Note that the niobium oxide layer 110 may be doped with all
the lithium in the lithium layer 116 by the predoping or part of
the lithium layer 116 may be left. The part of the lithium layer
116 left after the predoping can be used to compensate lithium lost
by irreversible capacity due to charge and discharge of the power
storage element.
[0046] Although the insulating layer 102 is provided in this
embodiment, a structure without the insulating layer 102 may be
employed. For example, in the case where an insulating material is
used for the substrate 100, the insulating layer 102 can be
omitted.
[0047] There is no particular limitation on the substrate 100 as
long as it has heat resistance enough to withstand at least heat
treatment performed later. For example, a glass substrate, a
ceramic substrate, a quartz substrate, or a sapphire substrate may
be used as the substrate 100. Alternatively, a single crystal
semiconductor substrate or a polycrystalline semiconductor
substrate made of silicon, silicon carbide, or the like; a compound
semiconductor substrate made of GaN or the like; a
silicon-on-insulator (SOI) substrate; or the like may be used as
the substrate 100. Still alternatively, any of these substrates
further provided with a semiconductor element such as a transistor
may be used as the substrate 100.
[0048] Further alternatively, a flexible substrate may be used as
the substrate 100. Note that as a method for forming a power
storage element over a flexible substrate, there is a method in
which after a power storage element is formed over a non-flexible
substrate, the power storage element is separated from the
non-flexible substrate and transferred to a flexible substrate. In
that case, a separation layer is preferably provided between the
non-flexible substrate and the power storage element.
[0049] The insulating layer 102 may be formed to have a
single-layer or layered structure using at least one of the
following materials: silicon oxide, silicon oxynitride, silicon
nitride oxide, silicon nitride, aluminum oxide, aluminum nitride,
hafnium oxide, zirconium oxide, yttrium oxide, gallium oxide,
lanthanum oxide, cesium oxide, tantalum oxide, and magnesium
oxide.
[0050] The vanadium layer 104 and the niobium layer 106 can be
formed by a sputtering method, a vacuum deposition method, or the
like. When a sputtering method is used, not an RF power supply but
a DC power supply is used for deposition because vanadium has high
conductivity. A sputtering method using a DC power supply is
preferable because the deposition rate is high and thus cycle time
is short. The thickness may be, for example, greater than or equal
to 100 nm and less than or equal to 10 .mu.m. Alternatively, the
vanadium layer 104 and the niobium layer 106 may be formed by
nanoimprint lithography.
[0051] The vanadium layer or the niobium layer may be formed over a
selectively formed current collector layer. For example, a layered
structure may be employed in which the vanadium layer or the
niobium layer is formed over a current collector selectively formed
using titanium, aluminum, copper, or the like. Alternatively, a
layered structure including more than two layers may be
employed.
[0052] The distance between the vanadium layer 104 and the niobium
layer 106 may be, for example, greater than or equal to 10 nm and
is preferably greater than or equal to 100 nm for ease of
manufacture. Such a distance is provided to prevent a short
circuit. However, a wide distance between the vanadium layer 104
serving as a positive electrode current collector and the niobium
layer 106 serving as a negative electrode current collector
decreases the conductivity of carrier ions. Thus, the distance
between the vanadium layer 104 and the niobium layer 106 is
appropriately adjusted in accordance with the ionic conductivity of
a solid electrolyte used in a secondary battery.
[0053] Note that either the vanadium layer 104 or the niobium layer
106 may be formed first.
[0054] In this embodiment, the vanadium layer is used as the
positive electrode current collector layer; however, the present
invention is not limited thereto. A layer containing manganese may
be used as a positive electrode current collector layer.
[0055] Further, in this embodiment, the niobium layer is used as
the negative electrode current collector layer; however, the
present invention is not limited thereto. A layer containing
copper, cobalt, nickel, iron, tungsten, molybdenum, or tantalum may
be used as a negative electrode current collector layer.
[0056] The vanadium oxide layer 108 can be formed by performing
oxidation treatment on a surface of the vanadium layer 104.
Similarly, the niobium oxide layer 110 can be formed by performing
oxidation treatment on a surface of the niobium layer 106. Note
that oxidation treatment for formation of the vanadium oxide layer
108 and oxidation treatment for formation of the niobium oxide
layer 110 can be performed at one time. Thus, the vanadium oxide
layer 108 and the niobium oxide layer 110 can be formed
simultaneously, so that the process can be simplified.
[0057] Also in the case of using a positive electrode current
collector layer formed using any of the above elements other than
vanadium and a negative electrode current collector layer formed
using any of the above elements other than niobium, oxidation
treatment is performed, whereby layers serving as positive
electrode active material layers and negative electrode active
material layers can be formed.
[0058] The vanadium oxide layer 108 and the niobium oxide layer 110
function as a positive electrode active material and a negative
electrode active material, respectively. Thus, the thickness of the
vanadium oxide layer 108 and the niobium oxide layer 110 may be
adjusted in accordance with necessary battery capacity. Note that
complete oxidation of the vanadium layer 104 and the niobium layer
106 results in the loss of the functions of the positive electrode
current collector and the negative electrode current collector.
Thus, for example, in the case of performing oxidation treatment on
the vanadium layer 104 to form the vanadium oxide layer 108,
treatment conditions are adjusted so that 10% or more of the
vanadium layer 104 which has not been subjected to treatment is
left.
[0059] For the solid electrolyte layer 112, an inorganic solid
electrolyte which can be formed by a sputtering method, an
evaporation method, or a chemical vapor deposition method
(specifically a metal-organic chemical vapor deposition method) may
be used. Examples of the inorganic solid electrolyte are a
sulfide-based solid electrolyte and an oxide-based solid
electrolyte.
[0060] Examples of the sulfide-based solid electrolyte are
compounds containing lithium and sulfur such as
Li.sub.2S--SiS.sub.2--Li.sub.3PO.sub.4, Li.sub.2S--P.sub.2S.sub.5,
Li.sub.2S--SiS.sub.2--Ga.sub.2S.sub.3,
LiI--Li.sub.2S--P.sub.2S.sub.5, LiI--Li.sub.2S--B.sub.2S.sub.3,
LiI--Li.sub.2S--SiS.sub.2, Li.sub.3PO.sub.4--Li.sub.2S--SiS.sub.2,
and Li.sub.4SiO.sub.4--Li.sub.2S--SiS.sub.2.
[0061] Examples of the oxide-based solid electrolyte are compounds
containing lithium and sulfur, compounds containing lithium and
oxygen, and lithium oxides such as LiPON, Li.sub.2O,
Li.sub.2CO.sub.3, Li.sub.2MoO.sub.4, Li.sub.3PO.sub.4,
Li.sub.3VO.sub.4, Li.sub.4SiO.sub.4,
LLT(La.sub.2/3-xLi.sub.3xTiO.sub.3), and
LLZ(Li.sub.7La.sub.3Zr.sub.2O.sub.12).
[0062] Alternatively, a polymer solid electrolyte such as
poly(ethylene oxide) (PEO) formed by a coating method or the like
may be used. Still alternatively, a composite solid electrolyte
containing any of the above inorganic solid electrolytes and a
polymer solid electrolyte may be used.
[0063] The lithium layer 116 may be formed by a sputtering method,
a vacuum deposition method, or the like. The thickness of the
lithium layer 116 is appropriately determined depending on the
amount needed for predoping. Note that the lithium layer 116 is
formed so as to overlap with at least one of the vanadium oxide
layer 108 and the niobium oxide layer 110 and may be formed over
the entire surface over which the lithium layer 116 is to be
formed. Although the lithium layer 116 is formed so as to overlap
with the niobium oxide layer 110 with the solid electrolyte layer
112 interposed therebetween in FIG. 1C, the lithium layer 116 may
be in direct contact with the niobium oxide layer 110.
[0064] The sealing layer 114 is also referred to as a capping
layer. The sealing layer 114 is formed to cover the solid
electrolyte layer 112, the vanadium oxide layer 108, and the
niobium oxide layer 110. The sealing layer 114 formed in this
manner can prevent the power storage element 200 from being exposed
to the air. For the sealing layer 114, an insulating material such
as a resin (e.g., epoxy resin), glass, an amorphous compound, or
ceramics can be used, for example. Further, a layer containing
calcium fluoride or the like may be provided as a water absorption
layer in an epoxy resin layer. The sealing layer 114 can be formed
by a spin coating method, an ink-jet method, or the like.
(Formation Method of Power Storage Element)
[0065] Next, a formation method of the power storage element
illustrated in FIG. 1C will be described with reference to FIGS. 2A
to 2D.
[0066] First, the insulating layer 102 is formed over the substrate
100. The insulating layer 102 can be formed by a sputtering method,
a CVD method, an evaporation method, or the like. In this
embodiment, silicon oxide is preferably deposited to a thickness of
approximately 100 nm.
[0067] Then, the vanadium layer 104 is formed over the insulating
layer 102. The vanadium layer 104 can be formed by a sputtering
method, for example. A sputtering method using a DC power supply is
preferably employed for formation of the vanadium layer 104 because
vanadium has high conductivity. The thickness of the vanadium layer
104 is greater than or equal to 100 nm and less than or equal to 10
.mu.m, preferably greater than or equal to 1 .mu.m and less than or
equal to 3 .mu.m.
[0068] Processing is performed so that the vanadium layer 104 has a
desired shape to function as the positive electrode current
collector, after deposition is performed by a deposition method.
Alternatively, for example, the vanadium layer 104 is formed by a
sputtering method using a metal mask or the like, whereby the
vanadium layer 104 can be provided to have a desired shape without
a step such as processing.
[0069] Alternatively, the vanadium layer 104 may be formed by
nanoimprint lithography. In nanoimprint lithography, first, the
surface of a plate-shaped mold formed of a resin or the like is
processed to have a desired shape; then, the mold processed to have
the desired shape is brought into contact with (stamped on) a board
over which a material to be deposited (e.g., a vanadium paste) is
evenly applied, in order that the material is selectively
transferred to the mold, and the selectively transferred material
is brought into contact with a surface over which the material is
to be deposited, whereby the material can be selectively
deposited.
[0070] Still alternatively, a vanadium layer may be processed by
photolithography after being formed by a sputtering method. For
example, a photoresist is subjected to light exposure to form a
mask over the formed vanadium layer and etching is performed using
hydrofluoric acid, so that the processed vanadium layer 104 can be
formed.
[0071] Then, the niobium layer 106 is formed over the insulating
layer 102. The niobium layer 106 can be formed by a sputtering
method, for example. A sputtering method using a DC power supply is
preferably employed for formation of the niobium layer 106 because
niobium has high conductivity. The thickness of the niobium layer
106 is greater than or equal to 100 nm and less than or equal to 10
.mu.m, preferably greater than or equal to 1 .mu.m and less than or
equal to 3 .mu.m.
[0072] Processing is performed so that the niobium layer 106 has a
desired shape to function as the negative electrode current
collector, after deposition is performed by a deposition method.
Alternatively, for example, the niobium layer 106 is formed by a
sputtering method using a metal mask or the like, whereby the
niobium layer 106 can be provided to have a desired shape without a
step such as processing.
[0073] Alternatively, the niobium layer 106 may be formed by
nanoimprint lithography.
[0074] Still alternatively, a niobium layer may be processed by
photolithography after being formed by a sputtering method. For
example, a photoresist is subjected to light exposure to form a
mask over the formed niobium layer and etching is performed using
an alkaline solution such as a potassium hydroxide aqueous
solution, so that the processed niobium layer 106 can be
formed.
[0075] Through the above steps, the vanadium layer 104 functioning
as the positive electrode current collector and the niobium layer
106 functioning as the negative electrode current collector can be
formed.
[0076] Then, the vanadium layer 104 and the niobium layer 106,
which have been formed, are subjected to oxidation treatment such
as oxygen plasma treatment, radical oxidation treatment, anodic
oxidation treatment, or thermal oxidation treatment (see FIG.
2A).
[0077] By the oxidation treatment, the surfaces of the vanadium
layer 104 and the niobium layer 106 are oxidized, so that the
vanadium oxide layer 108 and the niobium oxide layer 110 are formed
(see FIG. 2B). Anodic oxidation treatment enables formation of a
thick oxide film and thus is suitable for forming the vanadium
oxide layer 108 and the niobium oxide layer 110 so that they are
thick.
[0078] Then, the solid electrolyte layer 112 is formed in contact
with the vanadium oxide layer 108 and the niobium oxide layer 110.
For the solid electrolyte layer 112, UPON may be used, for example.
LiPON can be deposited by a sputtering method; specifically, a
Li.sub.3PO.sub.4 target and a reactive sputtering method using a
reaction gas containing a nitrogen gas can be used. The thickness
of the solid electrolyte layer 112 is greater than or equal to 100
nm and less than or equal to 10 .mu.m. Further, when deposition is
performed using a metal mask, the solid electrolyte layer 112
having a desired shape can be formed without a step such as
processing.
[0079] Alternatively, nanoimprint lithography or photolithography
may be employed for forming the solid electrolyte layer 112.
[0080] Then, the lithium layer 116 is formed so as to overlap with
the niobium oxide layer 110 with the solid electrolyte layer 112
interposed therebetween (see FIG. 2C). The lithium layer 116 may be
formed by an evaporation method, a sputtering method, or the like.
The thickness of the lithium layer 116 is appropriately determined
depending on the amount needed for predoping. Note that the lithium
layer 116 is formed so, as to overlap with at least one of the
vanadium oxide layer 108 and the niobium oxide layer 110 and may be
formed over the entire surface over which the lithium layer 116 is
to be formed. Although the lithium layer 116 is formed so as to
overlap with the niobium oxide layer 110 in FIG. 1C, the lithium
layer 116 may be in direct contact with the niobium oxide layer
110. The lithium layer 116 in direct contact with the niobium oxide
layer 110 allows the niobium oxide layer 110 to be predoped with
lithium without a process such as application of an electric field.
Note that the same applies to predoping the vanadium oxide layer
108.
[0081] Then, the sealing layer 114 is formed to cover the lithium
layer 116, the solid electrolyte layer 112, the vanadium oxide
layer 108, and the niobium oxide layer 110 (see FIG. 2D). For the
sealing layer 114, an epoxy resin may be used, for example. The
sealing layer 114 is provided to prevent the power storage element
200 from being exposed to external air, leading to minimization of
deterioration of the power storage element 200.
[0082] Through the above steps, the power storage element 200 in
FIG. 1C can be formed.
[0083] As described in one embodiment of the present invention,
oxidation treatment is performed on the positive electrode current
collector layer and the negative electrode current collector layer,
whereby the positive electrode active material layer and the
negative electrode active material layer can be formed on the
surface of the positive electrode current collector layer and the
surface of the negative electrode current collector layer,
respectively. Thus, the manufacturing process can be simplified,
leading to a reduction in manufacturing cost.
[0084] According to one embodiment of the present invention, a
power storage element which includes a positive electrode and a
negative electrode provided so as to be level with each other and
which can be formed through a simple process and a formation method
of the power storage element can be provided.
Embodiment 2
[0085] A power storage device in this embodiment is different from
the power storage device 900 in Embodiment 1 in that the plurality
of power storage elements 200 are electrically connected through
wirings. Specifically, in this embodiment, the plurality of power
storage elements 201 arranged so as to be level with each other in
a power storage device 901 are electrically connected through
wirings 218, whereby the power storage elements 201 are arranged in
series or in parallel.
[0086] In this embodiment, as in Embodiment 1, descriptions will be
given of a power storage element and a power storage device in each
of which a vanadium layer is used as a positive electrode current
collector layer; a vanadium oxide layer is used as a positive
electrode active material layer; a niobium layer is used as a
negative electrode current collector layer; and a niobium oxide
layer is used as a negative electrode active material layer.
[0087] In this embodiment, a means for switching between series
connection and parallel connection of the power storage elements
(also referred to as a switch) may be provided. A semiconductor
device including a transistor and the like may be used as the
switching means, for example.
[0088] FIG. 3A is a top view of the power storage device 901. As
illustrated in FIG. 3A, the plurality of power storage elements 201
are arranged and electrically connected through the wirings 218.
Although not particularly illustrated, a switch for electrical
connection can be provided between the power storage elements 201.
FIG. 3B is a top view of the power storage element 201 and FIG. 3C
is a cross-sectional view along dashed dotted line A-B in FIG. 3B.
Note that the difference between the power storage element 201 and
the power storage element 200 in Embodiment 1 is presence or
absence of the wirings 218 connected to the vanadium layer 204 and
the niobium layer 206.
[0089] The wiring 218 is preferably formed using a material with
high conductivity. For the wiring 218, a metal film containing an
element selected from gold (Au), platinum (Pt), aluminum (Al),
chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti),
molybdenum (Mo), and tungsten (W) or a metal nitride film
containing any of the above elements as its component (e.g., a
titanium nitride film, a molybdenum nitride film, or a tungsten
nitride film) can be used.
[0090] The wiring 218 can be formed by a sputtering method, a CVD
method, an evaporation method, or the like. Further, a metal mask
can be used in formation of the wiring 218 by any of the methods,
whereby a desired shape can be formed without processing.
Alternatively, nanoimprint lithography may be employed, in which
case the wirings 218 each having a desired shape can be formed
without a step for processing as in the case of using a metal
mask.
[0091] As described above, the plurality of power storage elements
201 are electrically connected through the wirings 218 and switches
with which connection of the power storage elements 201 is switched
are provided. The switch can be formed using a semiconductor device
including a transistor and the like. Although the semiconductor
device can be provided so as to be level with the power storage
element 201, a space for the power storage element 201 is reduced
by the semiconductor device. Thus, the semiconductor device and the
power storage element 201 are preferably formed in different
layers; for example, the power storage element 201 is formed in a
layer over the semiconductor device, after the semiconductor device
is formed over a substrate.
[0092] Next, a manufacturing method of a structure where a
semiconductor device (here, a transistor 501) and the power storage
element 201 are stacked will be described with reference to FIGS.
4A to 4D and FIGS. 5A to 5D. Note that the transistor 501 described
below is only an example and is not limited thereto.
<Formation Method of Transistor 501>
[0093] First, the substrate 100 is prepared. There is no particular
limitation on the substrate 100 as long as it has heat resistance
enough to withstand at least heat treatment performed later. For
example, a glass substrate, a ceramic substrate, a quartz
substrate, or a sapphire substrate may be used as the substrate
100. Alternatively, a single crystal semiconductor substrate or a
polycrystalline semiconductor substrate of silicon, silicon
carbide, or the like, a compound semiconductor substrate of silicon
germanium or the like, an SOI (silicon on insulator) substrate, or
the like can be used.
[0094] Still alternatively, a flexible substrate may be used as the
substrate 100. Note that as a method for forming a transistor over
a flexible substrate, there is a method in which after a transistor
is formed over a non-flexible substrate, the transistor is
separated from the non-flexible substrate and transferred to the
substrate 100 which is flexible. In that case, a separation layer
is preferably provided between the non-flexible substrate and the
transistor.
[0095] Then, the base insulating film 502 is formed. The base
insulating film 502 may be formed to have a single-layer or layered
structure using one or more of the following materials: aluminum
oxide, magnesium oxide, silicon oxide, silicon oxynitride, silicon
nitride oxide, silicon nitride, germanium oxide, yttrium oxide,
zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide,
and tantalum oxide.
[0096] Next, a semiconductor film to be the semiconductor layer 504
is formed using a Group 14 element such as silicon or germanium, or
a metal oxide such as In--Ga--Zn-based oxide. The semiconductor
film may be formed by a sputtering method, a CVD method, an MBE
method, an ALD method, or a PLD method.
[0097] Next, the semiconductor film to be the semiconductor layer
504 is processed into an island shape. For example, etching
treatment is performed using a resist mask that is formed by a
photolithography method, whereby the semiconductor layer 504 having
a desired shape is obtained.
[0098] Then, a gate insulating film 506 is formed (see FIG. 4A).
The gate insulating film 506 may be formed to have a single-layer
or layered structure using one or more of the following materials:
aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride,
silicon nitride oxide, silicon nitride, germanium oxide, yttrium
oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium
oxide, and tantalum oxide. The gate insulating film 506 may be
formed by a sputtering method, a CVD method, an MBE method, an ALD
method, or a PLD method.
[0099] Then, a conductive film to be a gate electrode 508 is
formed. The conductive film may be formed to have a single-layer or
layered structure using a simple substance, a nitride, an oxide, or
an alloy containing an element selected from Al, Ti, Cr, Co, Ni,
Cu, Y, Zr, Mo, Ag, Ta, and W. The conductive film may be formed by
a sputtering method, a CVD method, an MBE method, an ALD method, or
a PLD method.
[0100] The conductive film is processed to form the gate electrode
508, and an impurity which generates a carrier in the semiconductor
layer 504 is added using the gate electrode 508 as a mask (see FIG.
4B).
[0101] When an impurity is added to the semiconductor layer 504, a
channel region 503 to which the impurity is not added and low
resistance regions 505 to which the impurity is added are formed
(see FIG. 4C). As the impurity, phosphorus, boron, or the like may
be added in the case where the semiconductor layer is formed using
silicon or a metal oxide such as In--Ga--Zn-based oxide.
[0102] Then, an interlayer insulating film 510 is formed. The
interlayer insulating film 510 may be formed using a method and a
material that are similar to those of the base insulating film
502.
[0103] Then, the interlayer insulating film 510 is processed, and
the wiring 218 is formed in contact with the semiconductor layer
504. The wiring 218 can be formed by processing a conductive film
to be the wiring 218 (see FIG. 4D). Although the structure where
the wiring 218 is connected to the semiconductor layer 504 of the
transistor 501 is described in this embodiment, the structure of
the transistor 501 is not limited thereto. For example, the gate
electrode 508 may be connected to the wiring 218.
[0104] Through the above steps, the transistor 501 can be
formed.
<Formation Method of Power Storage Element 201>
[0105] Next, a method for forming the power storage element 201
above the transistor 501 formed through the above steps will be
described below.
[0106] First, the vanadium layer 204 is formed over the interlayer
insulating film 510. The vanadium layer 204 can be formed by a
sputtering method, for example. A sputtering method using a DC
power supply is preferably employed for formation of the vanadium
layer 204 because vanadium has high conductivity. The thickness of
the vanadium layer 204 is greater than or equal to 100 nm and less
than or equal to 10 .mu.m, or greater than or equal to 1 .mu.m and
less than or equal to 3 .mu.m.
[0107] The vanadium layer 204 can be prepared by employing
materials and methods similar to those employed for the vanadium
layer 104 described in Embodiment 1.
[0108] Then, the niobium layer 206 is formed over the interlayer
insulating film 510. The niobium layer 206 can be formed by a
sputtering method, for example. A sputtering method using a DC
power supply is preferably employed for formation of the niobium
layer 206 because niobium has high conductivity. The thickness of
the niobium layer 206 is greater than or equal to 100 nm and less
than or equal to 10 .mu.m, or greater than or equal to 1 .mu.m and
less than or equal to 3 .mu.m.
[0109] The niobium layer 206 can be prepared by employing materials
and methods similar to those employed for the niobium layer 106
described in Embodiment 1.
[0110] Through the above steps, the vanadium layer 204 serving as
the positive electrode current collector and the niobium layer 206
serving as the negative electrode current collector can be
formed.
[0111] Then, the vanadium layer 204 and the niobium layer 206,
which have been formed, are subjected to oxidation treatment such
as oxygen plasma treatment, radical oxidation treatment, anodic
oxidation treatment, or thermal oxidation treatment (see FIG.
5A).
[0112] By the oxidation treatment, the surfaces of the vanadium
layer 204 and the niobium layer 206 are oxidized, whereby the
vanadium oxide layer 208 and the niobium oxide layer 210 are formed
(see FIG. 5B).
[0113] Then, the solid electrolyte layer 112 is formed in contact
with the vanadium oxide layer 208 and the niobium oxide layer 210.
The solid electrolyte layer 112 can be prepared by employing a
material and a method at a thickness similar to those employed for
the solid electrolyte layer 112 described in Embodiment 1.
[0114] Then, the lithium layer 116 is formed so as to overlap with
the niobium oxide layer 210 with the solid electrolyte layer 112
interposed therebetween (see FIG. 5C). The lithium layer 116 can be
prepared by employing methods similar to those employed for the
lithium layer 116 described in Embodiment 1.
[0115] Then, the sealing layer 114 is formed to cover the lithium
layer 116, the solid electrolyte layer 112, the vanadium oxide
layer 208, and the niobium oxide layer 210 (see FIG. 5D). The
sealing layer 114 can be prepared by employing materials and
methods similar to those employed for the sealing layer 114
described in Embodiment 1.
[0116] Although the vanadium oxide layer 208 and the niobium oxide
layer 210 are formed by performing oxidation treatment on the
vanadium layer 204 and the niobium layer 206 in FIG. 5B, a surface
of the wiring 218 may also be oxidized by the oxidation treatment.
For example, in the case where aluminum or an aluminum alloy is
used for the wiring 218, a surface of the aluminum is oxidized by
oxidation treatment, so that aluminum oxide in the passive state is
formed. The use of a metal oxide film 220 formed on the surface of
the wiring 218 in such a manner (see FIG. 6) allows formation of a
highly reliable power storage device which has resistance to the
deterioration of the wiring due to moisture or the like from
external air.
[0117] Through the above steps, the power storage element 201 can
be formed above the transistor 501.
[0118] Next, FIG. 7A is a block diagram illustrating connection in
the power storage device 901 where the plurality of power storage
elements 201 are electrically connected through the wirings 218 in
FIG. 3A. Note that a power storage element array 300 includes the
plurality of power storage elements 201.
[0119] As illustrated in FIG. 7B, in the power storage element
array 300, the plurality of power storage elements 201 are
connected to each other, and a plurality of switches 400 are
provided between the adjacent power storage elements 201.
[0120] With the switches 400, the connection of the wirings 218 can
be switched, whereby switching between series connection and
parallel connection of the power storage elements 201 in the power
storage element array 300 can be performed. Additionally,
series-parallel connection in which series connection and parallel
connection are combined can be employed.
[0121] For example, by switching the connection of the switches 400
as illustrated in FIG. 8A, the power storage elements 201 are
connected in series.
[0122] Further, by switching the connection of the switches 400 as
illustrated in FIG. 8B, the power storage elements 201 are
connected in parallel.
[0123] As described above, by switching the connection of the
switches 400, switching between series connection and parallel
connection of the plurality of power storage elements 201 can be
easily performed. Thus, for example, in the case where a high
electromotive force is needed, the power storage elements 201 are
connected in series, whereby the electromotive force can be
increased in accordance with the number of connected elements. When
the power storage elements 201 are connected in parallel, the power
storage elements 201 can be charged all at once, leading to a
reduction in charging time.
[0124] According to this embodiment, various potentials according
to the number of serially connected power storage elements can be
supplied even simultaneously. For example, a circuit including a
plurality of elements (e.g., CPU, DRAM, and SRAM), such as LSI,
needs to be provided with a plurality of power supply circuits
because the plurality of elements need different potentials. In
contrast, the power storage device of this embodiment enables
various potentials to be supplied simultaneously, so that such a
plurality of power supply circuits are unnecessary. Therefore,
reductions in scale and cost of a circuit can be achieved.
[0125] As described in one embodiment of the present invention,
oxidation treatment is performed on the positive electrode current
collector layer and the negative electrode current collector layer,
whereby the positive electrode active material layer and the
negative electrode active material layer can be formed on the
surface of the positive electrode current collector layer and the
surface of the negative electrode current collector layer,
respectively, at the same time. Thus, the manufacturing process can
be simplified, leading to a reduction in manufacturing cost.
[0126] According to one embodiment of the present invention, a
power storage element which includes a positive electrode and a
negative electrode provided so as to be level with each other and
which can be formed through a simple process, a formation method of
the power storage element, and a power storage device can be
provided.
[0127] Note that circuit diagrams in FIG. 7B and FIGS. 8A and 8B
are just examples; a circuit where the arrangement of the power
storage elements 201 and the switches 400 is changed as appropriate
may be used.
Embodiment 3
[0128] In this embodiment, application examples of any of the power
storage devices described in Embodiments 1 and 2 will be described
with reference to FIG. 9.
[0129] Specific examples of electrical devices each utilizing the
power storage device of one embodiment of the present invention are
as follows: display devices, lighting devices, desktop personal
computers and laptop personal computers, image reproduction devices
which reproduce still images and moving images stored in recording
media such as digital versatile discs (DVDs), mobile phones,
portable game machines, portable information terminals, e-book
readers, video cameras, digital still cameras, high-frequency
heating appliances such as microwave ovens, electric rice cookers,
electric washing machines, air-conditioning systems such as air
conditioners, electric refrigerators, electric freezers, and
electric refrigerator-freezers, freezers for preserving DNA, and
dialyzers. In addition, moving objects driven by electric motors
using power from power storage devices are also included in the
category of electrical devices. Examples of the moving objects
include electric vehicles, hybrid vehicles each including both an
internal-combustion engine and an electric motor, and motorized
bicycles including motor-assisted bicycles.
[0130] In the electrical devices, the power storage device of one
embodiment of the present invention can be used as a power storage
device for supplying enough power for almost the whole power
consumption (referred to as a main power supply). Alternatively, in
the electrical devices, the power storage device of one embodiment
of the present invention can be used as a power storage device to
supply power to the electrical devices when supply of power from a
main power supply or a commercial power supply is stopped (such a
power storage device is referred to as an uninterruptible power
supply). Still alternatively, in the electrical devices, the power
storage device of one embodiment of the present invention can be
used as a power storage device for supplying power to the
electrical devices at the same time as the power supply from a main
power supply or a commercial power supply (such a power storage
device is referred to as an auxiliary power supply).
[0131] FIG. 9 illustrates specific structures of the electrical
devices. In FIG. 9, a display device 5000 is an example of an
electrical device including a power storage device 5004 of one
embodiment of the present invention. Specifically, the display
device 5000 corresponds to a display device for TV broadcast
reception and includes a housing 5001, a display portion 5002,
speaker portions 5003, and the power storage device 5004. The power
storage device 5004 of one embodiment of the present invention is
provided in the housing 5001. The display device 5000 can receive
power from a commercial power supply. Alternatively, the display
device 5000 can use power stored in the power storage device 5004.
Thus, the display device 5000 can be operated with the use of the
power storage device 5004 of one embodiment of the present
invention as an uninterruptible power supply even when power cannot
be supplied from a commercial power supply due to power failure or
the like.
[0132] A semiconductor display device such as a liquid crystal
display device, a light-emitting device in which a light-emitting
element such as an organic EL element is provided in each pixel, an
electrophoresis display device, a digital micromirror device (DMD),
a plasma display panel (PDP), or a field emission display (FED) can
be used for the display portion 5002.
[0133] Note that the display device includes, in its category, all
of information display devices for personal computers,
advertisement displays, and the like besides TV broadcast
reception.
[0134] In FIG. 9, an installation lighting device 5100 is an
example of an electrical appliance including a power storage device
5103 of one embodiment of the present invention. Specifically, the
lighting device 5100 includes a housing 5101, a light source 5102,
and a power storage device 5103. Although FIG. 9 illustrates the
case where the power storage device 5103 is provided in a ceiling
5104 on which the housing 5101 and the light source 5102 are
installed, the power storage device 5103 may be provided in the
housing 5101. The lighting device 5100 can receive power from a
commercial power supply. Alternatively, the lighting device 5100
can use power stored in the power storage device 5103. Thus, the
lighting device 5100 can be operated with the use of the power
storage device 5103 of one embodiment of the present invention as
an uninterruptible power supply even when power cannot be supplied
from a commercial power supply due to power failure or the
like.
[0135] Note that although the installation lighting device 5100
provided in the ceiling 5104 is illustrated in FIG. 9 as an
example, the power storage device of one embodiment of the present
invention can be used in an installation lighting device provided
in, for example, a wall 5105, a floor 5106, a window 5107, or the
like other than the ceiling 5104. Alternatively, the power storage
device can be used in a tabletop lighting device or the like.
[0136] As the light source 5102, an artificial light source which
emits light artificially by using power can be used. Specifically,
an incandescent lamp, a discharge lamp such as a fluorescent lamp,
and light-emitting elements such as an LED and an organic EL
element are given as examples of the artificial light source.
[0137] In FIG. 9, an air conditioner including an indoor unit 5200
and an outdoor unit 5204 is an example of an electrical appliance
including a power storage device 5203 of one embodiment of the
invention. Specifically, the indoor unit 5200 includes a housing
5201, an air outlet 5202, and a power storage device 5203. Although
FIG. 9 illustrates the case where the power storage device 5203 is
provided in the indoor unit 5200, the power storage device 5203 may
be provided in the outdoor unit 5204. Alternatively, the power
storage devices 5203 may be provided in both the indoor unit 5200
and the outdoor unit 5204. The air conditioner can receive power
from a commercial power supply. Alternatively, the air conditioner
can use power stored in the power storage device 5203. Particularly
in the case where the power storage devices 5203 are provided in
both the indoor unit 5200 and the outdoor unit 5204, the air
conditioner can be operated with the use of the power storage
device 5203 of one embodiment of the present invention as an
uninterruptible power supply even when power cannot be supplied
from a commercial power supply due to power failure or the
like.
[0138] Note that although the split-type air conditioner including
the indoor unit and the outdoor unit is illustrated in FIG. 9 as an
example, the power storage device of one embodiment of the present
invention can be used in an air conditioner in which the functions
of an indoor unit and an outdoor unit are integrated in one
housing.
[0139] In FIG. 9, an electric refrigerator-freezer 5300 is an
example of an electrical appliance including a power storage device
5304 of one embodiment of the present invention. Specifically, the
electric refrigerator-freezer 5300 includes a housing 5301, a door
for a refrigerator 5302, a door for a freezer 5303, and the power
storage device 5304. The power storage device 5304 is provided in
the housing 5301 in FIG. 9. The electric refrigerator-freezer 5300
can receive power from a commercial power supply. Alternatively,
the electric refrigerator-freezer 5300 can use power stored in the
power storage device 5304. Thus, the electric refrigerator-freezer
5300 can be operated with the use of the power storage device 5304
of one embodiment of the present invention as an uninterruptible
power supply even when power cannot be supplied from a commercial
power supply due to power failure or the like.
[0140] Note that among the electrical devices described above, a
high-frequency heating apparatus such as a microwave oven and an
electrical device such as an electric rice cooker require high
power in a short time. The tripping of a breaker of a commercial
power supply in use of an electrical appliance can be prevented by
using the power storage device of one embodiment of the present
invention as an auxiliary power supply for supplying power which
cannot be supplied enough by a commercial power supply.
[0141] In addition, in a time period when electrical devices are
not used, particularly when the proportion of the amount of power
which is actually used to the total amount of power which can be
supplied from a commercial power supply source (such a proportion
referred to as a usage rate of power) is low, power can be stored
in the power storage device, whereby the usage rate of power can be
reduced in a time period when the electrical devices are used. For
example, in the case of the electric refrigerator-freezer 5300,
power can be stored in the power storage device 5304 in night time
when the temperature is low and the door for a refrigerator 5302
and the door for a freezer 5303 are not often opened or closed. On
the other hand, in daytime when the temperature is high and the
door for a refrigerator 5302 and the door for a freezer 5303 are
frequently opened and closed, the power storage device 5304 is used
as an auxiliary power supply; thus, the usage rate of power in
daytime can be reduced.
[0142] Next, a portable information terminal which is an example of
electrical devices will be described with reference to FIGS. 10A to
10C.
[0143] FIGS. 10A and 10B illustrate a tablet terminal which can be
folded. FIG. 10A illustrates the tablet terminal in the state of
being unfolded. The tablet terminal includes a housing 9630, a
display portion 9631a, a display portion 9631b, a display-mode
switching button 9034, a power button 9035, a power-saving-mode
switching button 9036, a fastener 9033, and an operation button
9038.
[0144] A touch panel area 9632a can be provided in part of the
display portion 9631a, in which area, data can be input by touching
displayed operation keys 9638. Note that half of the display
portion 9631a has only a display function and the other half has a
touch panel function. However, the structure of the display portion
9631a is not limited to this, and all the area of the display
portion 9631a may have a touch panel function. For example, a
keyboard can be displayed on the whole display portion 9631a to be
used as a touch panel, and the display portion 9631b can be used as
a display screen.
[0145] A touch panel area 9632b can be provided in part of the
display portion 9631b like in the display portion 9631a. When a
keyboard display switching button 9639 displayed on the touch panel
is touched with a finger, a stylus, or the like, a keyboard can be
displayed on the display portion 9631b.
[0146] The touch panel area 9632a and the touch panel area 9632b
can be controlled by touch input at the same time.
[0147] The display-mode switching button 9034 allows switching
between a landscape mode and a portrait mode, color display and
black-and-white display, and the like. The power-saving-mode
switching button 9036 allows optimizing the display luminance in
accordance with the amount of external light in use which is
detected by an optical sensor incorporated in the tablet terminal.
In addition to the optical sensor, other detecting devices such as
sensors for determining inclination, such as a gyroscope or an
acceleration sensor, may be incorporated in the tablet
terminal.
[0148] Although the display area of the display portion 9631a is
the same as that of the display portion 9631b in FIG. 10A, one
embodiment of the present invention is not particularly limited
thereto. The display area of the display portion 9631a may be
different from that of the display portion 9631b, and further, the
display quality of the display portion 9631a may be different from
that of the display portion 9631b. For example, one of the display
portions 9631a and 9631b may display higher definition images than
the other.
[0149] FIG. 10B illustrates the tablet terminal in the state of
being closed. The tablet terminal includes the housing 9630, a
solar cell 9633, a charge/discharge control circuit 9634, a battery
9635, and a DC-DC converter 9636. FIG. 10B illustrates an example
where the charge/discharge control circuit 9634 includes the
battery 9635 and the DC-DC converter 9636. The power storage device
described in the above embodiment is used as the battery 9635.
[0150] Since the tablet terminal can be folded, the housing 9630
can be closed when the tablet terminal is not in use. Thus, the
display portions 9631a and 9631b can be protected, which permits
the tablet terminal to have high durability and improved
reliability for long-term use.
[0151] The tablet terminal illustrated in FIGS. 10A and 10B can
also have a function of displaying various kinds of data (e.g., a
still image, a moving image, and a text image), a function of
displaying a calendar, a date, the time, or the like on the display
portion, a touch-input function of operating or editing data
displayed on the display portion by touch input, a function of
controlling processing by various kinds of software (programs), and
the like.
[0152] The solar cell 9633, which is attached on a surface of the
tablet terminal, can supply electric power to a touch panel, a
display portion, an image signal processor, and the like. Note that
the solar cell 9633 can be provided on one or both surfaces of the
housing 9630 and thus the battery 9635 can be charged efficiently.
The use of the power storage device of one embodiment of the
present invention as the battery 9635 has advantages such as a
reduction in size.
[0153] The structure and operation of the charge/discharge control
circuit 9634 illustrated in FIG. 10B will be described with
reference to a block diagram of FIG. 10C. FIG. 10C illustrates the
solar cell 9633, the battery 9635, the DC-DC converter 9636, a
converter 9637, switches SW1 to SW3, and the display portion 9631.
The battery 9635, the DC-DC converter 9636, the converter 9637, and
the switches SW1 to SW3 correspond to the charge and discharge
control circuit 9634 in FIG. 10B.
[0154] First, an example of operation in the case where electric
power is generated by the solar cell 9633 using external light will
be described. The voltage of electric power generated by the solar
cell 9633 is raised or lowered by the DC-DC converter 9636 so that
the electric power has a voltage for charging the battery 9635.
When the display portion 9631 is operated with the electric power
from the solar cell 9633, the switch SW1 is turned on and the
voltage of the electric power is raised or lowered by the converter
9637 to a voltage needed for operating the display portion 9631. In
addition, when display on the display portion 9631 is not
performed, the switch SW1 is turned off and the switch SW2 is
turned on so that the battery 9635 may be charged.
[0155] Although the solar cell 9633 is described as an example of a
power generation means, there is no particular limitation on the
power generation means, and the battery 9635 may be charged with
any of the other means such as a piezoelectric element or a
thermoelectric conversion element (Peltier element). For example,
the battery 9635 may be charged with a non-contact power
transmission module capable of performing charging by transmitting
and receiving electric power wirelessly (without contact), or any
of the other charge means used in combination.
[0156] It is needless to say that one embodiment of the present
invention is not limited to the electrical device illustrated in
FIGS. 10A to 10C as long as the electrical device is equipped with
the power storage device described in the above embodiment.
[0157] This embodiment can be implemented in combination with any
of the above embodiments as appropriate.
[0158] This application is based on Japanese Patent Application
serial no. 2012-069536 filed with the Japan Patent Office on Mar.
26, 2012, the entire contents of which are hereby incorporated by
reference.
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