U.S. patent application number 15/360898 was filed with the patent office on 2017-03-16 for liquid crystal display and manufacturing method thereof.
The applicant listed for this patent is Samsung Display Co., Ltd. Invention is credited to Hee-Keun LEE, Seon Uk LEE.
Application Number | 20170075164 15/360898 |
Document ID | / |
Family ID | 53271996 |
Filed Date | 2017-03-16 |
United States Patent
Application |
20170075164 |
Kind Code |
A1 |
LEE; Hee-Keun ; et
al. |
March 16, 2017 |
LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF
Abstract
A liquid crystal display includes: a substrate; a thin film
transistor disposed on the substrate; a pixel electrode connected
to the thin film transistor; and a roof layer facing the pixel
electrode. A plurality of microcavities are between the pixel
electrode and the roof layer. A liquid crystal material is in the
microcavities, and a dent is formed in the roof layer.
Inventors: |
LEE; Hee-Keun; (Suwon-si,
KR) ; LEE; Seon Uk; (Seongnam-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Samsung Display Co., Ltd |
Yongin-si |
|
KR |
|
|
Family ID: |
53271996 |
Appl. No.: |
15/360898 |
Filed: |
November 23, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14254700 |
Apr 16, 2014 |
9508855 |
|
|
15360898 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G02F 1/133345 20130101;
G02F 2201/123 20130101; G02F 1/133377 20130101; G02F 2001/133368
20130101; H01L 29/786 20130101; G02F 1/134309 20130101; G02F
1/136286 20130101; G02F 1/1341 20130101; G02F 1/1368 20130101; G02F
1/13394 20130101 |
International
Class: |
G02F 1/1333 20060101
G02F001/1333; G02F 1/1343 20060101 G02F001/1343; G02F 1/1341
20060101 G02F001/1341; G02F 1/1339 20060101 G02F001/1339; G02F
1/1368 20060101 G02F001/1368; G02F 1/1362 20060101
G02F001/1362 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 9, 2013 |
KR |
10-2013-0152666 |
Claims
1. A method for manufacturing a liquid crystal display, comprising:
forming a thin film transistor on a substrate; forming a pixel
electrode connected to a terminal of the thin film transistor;
forming a sacrificial layer on the pixel electrode; forming a roof
layer on the sacrificial layer; forming a plurality of
microcavities in which liquid crystal injection holes are formed by
removing the sacrificial layer; injecting a liquid crystal material
into the microcavities; and forming a capping layer on the roof
layer and the liquid crystal injection holes, wherein a dent is
formed in the roof layer.
2. The method of claim 1, wherein the forming a sacrificial layer
includes forming an opening at a part that overlaps a data line of
the thin film transistor, and in the forming a roof layer, the roof
layer fills the opening to form a partition wall forming part.
3. The method of claim 2, wherein a liquid crystal injection hole
forming region is formed between the microcavities, and the dent is
formed in the liquid crystal injection hole forming region.
4. The method of claim 3, wherein the dent is formed to overlap the
partition wall forming part.
5. The method of claim 4, wherein the partition wall forming part
is formed in parallel with the data line of the thin film
transistor.
6. The method of claim 1, wherein when at least two microcavities
neighboring each other from among the microcavities are set to be a
first group, a pattern in which the dent is formed between
neighboring first groups is repeated.
7. The method of claim 1, further comprising: forming a lower
insulating layer on the sacrificial layer; and forming an upper
insulating layer on the roof layer, wherein the upper insulating
layer is formed to cover the dent of the roof layer.
8. The method of claim 7, wherein the dent passes through the roof
layer to form an open region extending to the lower insulating
layer, and the lower insulating layer is formed to contact the
upper insulating layer in the open region.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional application of U.S. patent
application Ser. No. 14/254,700 filed on Apr. 16, 2014, which
claims priority to Korean Patent Application No. 10-2013-0152666
filed in the Korean Intellectual Property Office on Dec. 9, 2013,
and all the benefits accruing therefrom under 35 U.S.C. .sctn.119,
the contents of the prior applications being herein incorporated by
reference
BACKGROUND
[0002] (a) Field
[0003] The present application relates to a liquid crystal display
and a manufacturing method thereof.
[0004] (b) Description of the Related Art
[0005] A liquid crystal display as one of flat panel display
devices that are being widely used includes two display panels,
wherein field generating electrodes such as a pixel electrode and a
common electrode are formed with a liquid crystal layer interposed
therebetween.
[0006] The liquid crystal display generates an electric field in a
liquid crystal layer by applying a voltage to the field generating
electrodes to determine orientations of liquid crystal molecules of
the liquid crystal layer and control polarization of incident
light, thereby displaying an image.
[0007] A technique of forming a plurality of microcavities in a
pixel and filling the same with liquid crystals to implement a
display has been developed for one of the liquid crystal displays.
Although two sheets of substrates are used in a conventional liquid
crystal display, this technique forms constituent elements on one
substrate, thereby reducing weight, thickness, and the like of the
device.
[0008] A display device for forming a plurality of microcavities
forms a roof layer for maintaining the microcavities. The roof
layer is consecutively connected between the neighboring
microcavities. When a bending force with a curvature radius is
applied to the display device, a substantial amount of stress is
applied to the roof layer and a crack may occur.
[0009] The above information disclosed in this Background section
is only for enhancement of understanding of the background and
therefore it may contain information that does not form the prior
art that is already known in this country to a person of ordinary
skill in the art.
SUMMARY
[0010] Embodiments have been made in an effort to provide a liquid
crystal display for preventing a problem such as cracks when a
substrate is bent, and a manufacturing method thereof.
[0011] An exemplary embodiment provides a liquid crystal display
including: a substrate; a thin film transistor disposed on the
substrate; a pixel electrode connected to the thin film transistor;
and a roof layer facing the pixel electrode. A plurality of
microcavities are between the pixel electrode and the roof layer.
The microcavities forms a liquid crystal layer A liquid crystal
material is in the microcavities, and the roof layer includes a
dent.
[0012] The roof layer fills an opening between the microcavities to
form a partition wall forming part.
[0013] The dent is disposed to overlap the partition wall forming
part.
[0014] The partition wall forming part is along a data line of the
thin film transistor.
[0015] The liquid crystal display further includes a lower
insulating layer disposed at a lower part of the roof layer and an
upper insulating layer disposed at an upper part of the roof layer.
The upper insulating layer covers the dent of the roof layer.
[0016] The dent forms an open region that passes through the roof
layer and extends to the lower insulating layer. The lower
insulating layer contacts the upper insulating layer in the open
region.
[0017] When at least two microcavities neighboring each other from
among the plurality of microcavities are set to be a first group, a
pattern in which the dent is formed between the first group is
repeated.
[0018] The liquid crystal display further includes a common
electrode and a lower insulating layer disposed between the
microcavity and the roof layer, wherein the lower insulating layer
is disposed on the common electrode.
[0019] The liquid crystal display further includes an upper
insulating layer disposed on the roof layer and a capping layer
disposed on the upper insulating layer. A liquid crystal injection
hole forming region is formed between the microcavities. The
capping layer is disposed in the liquid crystal injection hole
forming region.
[0020] The substrate is a flexible substrate.
[0021] Another embodiment provides a method for manufacturing a
liquid crystal display as follows. A thin film transistor is formed
on a substrate. A pixel electrode is connected to a terminal of the
thin film transistor. A sacrificial layer is formed on the pixel
electrode. A roof layer is formed on the sacrificial layer. A
plurality of microcavities are formed in which liquid crystal
injection holes are formed by removing the sacrificial layer. A
liquid crystal material is injected into the microcavities. A
capping layer is formed on the roof layer and the liquid crystal
injection holes, wherein a dent is formed in the roof layer.
[0022] The forming of a sacrificial layer includes forming an
opening at a part that overlaps a data line of the thin film
transistor, and in the forming of a roof layer, the roof layer
fills the opening to form a partition wall forming part.
[0023] A liquid crystal injection hole forming region is formed
between the microcavities, and the dent is formed in the liquid
crystal injection hole forming region.
[0024] The dent is formed to overlap the partition wall forming
part.
[0025] The partition wall forming part is formed in parallel with
the data line of the thin film transistor.
[0026] When at least two microcavities neighboring each other from
among the microcavities are set to be a first group, a pattern in
which the dent is formed between neighboring first groups is
repeated.
[0027] The method further includes: forming a lower insulating
layer on the sacrificial layer; and forming an upper insulating
layer on the roof layer, wherein the upper insulating layer is
formed to cover the dent of the roof layer.
[0028] The dent passes through the roof layer to form an open
region extending to the lower insulating layer, and the lower
insulating layer is formed to contact the upper insulating layer in
the open region.
[0029] According to the exemplary embodiments, the dent is formed
in the roof layer so the display device in which the microcavity is
formed may receive less stress from external bending
deformation.
BRIEF DESCRIPTION OF THE DRAWINGS
[0030] FIG. 1 shows a layout view of a liquid crystal display
according to an exemplary embodiment.
[0031] FIG. 2 shows a cross-sectional view with respect to a line
of II-II of FIG. 1.
[0032] FIG. 3 shows a cross-sectional view with respect to a line
of III-III of FIG. 1.
[0033] FIG. 4 shows a cross-sectional view of a pattern of a roof
layer shown in FIG. 2.
[0034] FIG. 5 shows a perspective view of a pattern of a roof layer
shown in FIG. 4.
[0035] FIG. 6 shows a cross-sectional view of a changed pattern of
a roof layer shown in FIG. 4 according to an exemplary
embodiment.
[0036] FIG. 7 shows a cross-sectional view of a changed pattern of
a roof layer shown in FIG. 6 according to an exemplary
embodiment.
[0037] FIG. 8 shows a cross-sectional view of a changed pattern of
a roof layer shown in FIG. 3 according to an exemplary
embodiment.
[0038] FIGS. 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 show
cross-sectional views of a method for manufacturing a liquid
crystal display according to an exemplary embodiment.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0039] Hereinafter, exemplary embodiments will be described in
detail with reference to the accompanying drawings. As those
skilled in the art would realize, the described embodiments may be
modified in various different ways, all without departing from the
spirit or scope of the inventive concept. On the contrary,
exemplary embodiments introduced herein are disposed to make
disclosed contents thorough and complete and sufficiently transfer
the spirit of the inventive concept to those skilled in the
art.
[0040] In the drawings, the thickness of layers, films, panels,
regions, etc., are exaggerated for clarity. It will be understood
that when a layer is referred to as being "on" another layer or
substrate, it can be directly on the other layer or substrate, or
intervening them may also be present. Like reference numerals
designate like elements throughout the specification.
[0041] FIG. 1 shows a layout view of a liquid crystal display
according to an exemplary embodiment. FIG. 2 shows a
cross-sectional view with respect to a line of II-II of FIG. 1.
FIG. 3 shows a cross-sectional view with respect to a line of
III-III of FIG. 1.
[0042] FIG. 1 shows a 2*2 pixel part from among a plurality of
pixels, and such pixels may be repeatedly arranged from top to
bottom and from right to left in a liquid crystal display according
to an exemplary embodiment.
[0043] Referring to FIG. 1 to FIG. 3, a gate line 121 and a storage
electrode line 131 are formed on a substrate 110 made of
transparent glass or plastic. The gate line 121 includes a gate
electrode 124. The storage electrode line 131 is generally extended
in a horizontal direction and transmits a predetermined voltage
such as a common voltage (Vcom). The storage electrode line 131
includes a pair of perpendicular storage electrodes 135a that are
extended to be substantially perpendicular to the gate line 121,
and a horizontal storage electrode 135b for connecting ends of the
pair of perpendicular storage electrodes 135a. The storage
electrodes 135a and 135b surround a pixel electrode 191.
[0044] A gate insulating layer 140 is formed on the gate line 121
and the storage electrode line 131. A semiconductor layer 151
disposed to a lower part of the data line 171 and a semiconductor
layer 154 disposed to a lower part of source/drain electrodes and a
channel of a thin film transistor (Q) are formed on the gate
insulating layer 140.
[0045] A plurality of ohmic contacts may be formed on the
semiconductor layers 151 and 154 and between the data line 171 and
the source/drain electrodes, which are omitted is the drawing.
[0046] Data conductors 171, 173, and 175 including a source
electrode 173, a data line 171 connected to the source electrode
173, and a drain electrode 175 are formed on the semiconductor
layers 151 and 154 and the gate insulating layer 140.
[0047] The gate electrode 124, the source electrode 173, and the
drain electrode 175 form a thin film transistor (Q) together with
the semiconductor layer 154, and the channel of the thin film
transistor (Q) is formed on the semiconductor layer 154 between the
source electrode 173 and the drain electrode 175.
[0048] A first interlayer insulating layer 180a is formed on the
data conductors 171, 173, and 175 and the exposed semiconductor
layer 154. The first interlayer insulating layer 180a may include
an inorganic insulator such as a silicon nitride (SiNx) or a
silicon oxide (SiOx), or an organic insulator.
[0049] A color filter 230 and a light blocking member 220 are
formed on the first interlayer insulating layer 180a.
[0050] The light blocking member 220 is formed have a lattice
structure having an opening that corresponds to a region for
displaying an image, and it is formed with a material through which
light may not transmit. The color filter 230 is formed in the
opening of the light blocking member 220. The light blocking member
220 includes a horizontal light blocking member 220a formed in
parallel with the gate line 121, and a perpendicular light blocking
member 220b formed in parallel with the data line 171.
[0051] The color filter 230 displays primary colors including red,
green, and blue. However, the colors are not limited to the three
primary colors including red, green, and blue, and the color filter
230 may also display one among a cyan-based color, a magenta-based
color, a yellow-based color, and a white-based color. The color
filter 230 may be formed of materials displaying different colors
for each adjacent pixel.
[0052] A second interlayer insulating layer 180b is formed on the
color filter 230 and the light blocking member 220 to cover the
same. The second interlayer insulating layer 180b may include an
inorganic insulator such as a silicon nitride (SiNx) or a silicon
oxide (SiOx), or an organic insulator. Unlike those illustrated in
the cross-sectional view of FIG. 2, when a step is generated due to
a thickness difference between the color filter 230 and the light
blocking member 220, the second interlayer insulating layer 180b
includes the organic insulator to reduce or remove the step.
[0053] A contact hole 185 for exposing the drain electrode 175 is
formed in the color filter 230, the light blocking member 220, and
the interlayer insulating layers 180a and 180b.
[0054] A pixel electrode 191 is formed on the second interlayer
insulating layer 180b. The pixel electrode 191 may be made of a
transparent conductive material such as ITO or IZO.
[0055] The pixel electrode 191 has a quadrangular shape and
includes cross stems including a horizontal stem 191a and a
perpendicular stem 191b crossing the same. Further, the pixel
electrode 191 is divided into four sub-regions by the horizontal
stem 191a and the perpendicular stem 191b, and each sub-region
includes a plurality of micro-branches 191c. In addition, the
sub-region may further include an outer stem for surrounding the
pixel electrode 191.
[0056] The micro-branch 191c of the pixel electrode 191 has an
angle of substantially 40 to 45 degrees with respect to the gate
line 121 or the horizontal stem. The micro-branches of the two
neighboring sub-regions may also cross each other. Further, a width
of the micro-branch may be gradually increased or a gap between the
micro-branches 191c may be different.
[0057] The pixel electrode 191 is connected to a bottom of the
perpendicular stem 191b, includes an extension 197 that is wider
than the perpendicular stem 191b, is physically and electrically
connected to the drain electrode 175 through the contact hole 185
at the extension 197, and receives a data voltage from the drain
electrode 175.
[0058] The above descriptions of the thin film transistor (Q) and
the pixel electrode 191 are examples, and a configuration of the
thin film transistor and a design of the pixel electrode may be
changed so as to improve lateral visibility.
[0059] A lower alignment layer 11 is formed on the pixel electrode
191, and the lower alignment layer 11 may be a perpendicular
alignment layer. The lower alignment layer 11 may be formed by
including at least one of materials that are generally used for a
liquid crystal alignment layer, such as polyamic acid,
polysiloxane, or polyimide. Further, the lower alignment layer 11
may be a photoalignment layer.
[0060] An upper alignment layer 21 is disposed on a part that faces
the lower alignment layer 11, and a microcavity 305 is formed
between the lower alignment layer 11 and the upper alignment layer
21. A liquid crystal material including liquid crystal molecules
310 is injected into the microcavity 305 through a liquid crystal
injection hole 307 to form liquid crystal layer. The microcavity
305 may be formed in a column direction of the pixel electrode 191,
that is, the perpendicular direction. The alignment material for
forming the alignment layers 11 and 21 and the liquid crystal
material including the liquid crystal molecules 310 may be injected
into the microcavity 305 by using a capillary force.
[0061] The microcavity 305 is divided in the perpendicular
direction by a plurality of liquid crystal injection hole forming
regions 307FP disposed at a part that overlaps the gate line 121,
and a plurality of microcavities 305 are formed in a direction in
which the gate line 121 is extended. The microcavities 305 may
correspond to one or more pixel areas which may correspond to a
region that displays a screen.
[0062] A common electrode 270 and a lower insulating layer 350 are
disposed on the upper alignment layer 21. The common electrode 270
receives the common voltage and generates an electric field
together with the pixel electrode 191 to which the data voltage is
applied to determine a direction in which the liquid crystal
molecules 310 disposed in the microcavity 305 between the two
electrodes are slanted. The common electrode 270 forms a capacitor
together with the pixel electrode 191, and maintains the voltage
when the thin film transistor is turned off. The lower insulating
layer 350 may be formed with a silicon nitride (SiNx) or a silicon
oxide (SiOx).
[0063] The common electrode 270 has been described to be disposed
in the microcavity 305 in the present exemplary embodiment, and it
is also possible for the common electrode 270 to be formed at a
lower part of the microcavity 305 and be liquid crystal driven
according to a coplanar electrode (CE) mode in another exemplary
embodiment.
[0064] A roof layer 360 is disposed on the lower insulating layer
350. The roof layer 360 performs a support function to maintain the
microcavity 305 that is a space between the pixel electrode 191 and
the common electrode 270. The roof layer 360 may include a
photoresist or another organic material.
[0065] According to the exemplary embodiment, a dent 360d is formed
in the roof layer 360. The dent 360d is formed at a position
overlapping a partition wall forming part (PWP) between neighboring
microcavities 305. The dent 360d may have a shape of which a top
side of the roof layer 360 is dented, and the dent 360d may have
various shapes.
[0066] An upper insulating layer 370 is disposed on the roof layer
360. The upper insulating layer 370 may contact a top side of the
roof layer 360. The upper insulating layer 370 may cover the dent
360d. The upper insulating layer 370 may be formed with a silicon
nitride (SiNx) or a silicon oxide (SiOx).
[0067] A capping layer 390 is disposed on the upper insulating
layer 370. The capping layer 390 is disposed in a liquid crystal
injection hole forming region 307FP, and it covers the liquid
crystal injection hole 307 of the microcavity 305 exposed by the
liquid crystal injection hole forming region 307FP. The capping
layer 390 includes an organic material or an inorganic material.
Here, it has been shown that the liquid crystal material is removed
from the liquid crystal injection hole forming region 307FP and
remains only in the microcavities 305. However, it is also possible
for an extra liquid crystal material after being injected into the
microcavity 305 still remains in the liquid crystal injection hole
forming region 307FP.
[0068] As shown in FIG. 3, the partition wall forming part (PWP) is
formed between the microcavities 305 neighboring in the horizontal
direction. The partition wall forming part (PWP) may be formed in a
direction in which the data line 171 is extended, and it may be
covered by the roof layer 360. The partition wall forming part
(PWP) is filled with the lower insulating layer 350, the common
electrode 270, the upper insulating layer 370, and the roof layer
360, and such a structure forms a partition wall and divides or
defines the microcavity 305. Since a partition wall structure such
as the partition wall forming part (PWP) is disposed between the
microcavities 305, less stress may be generated when the substrate
110 is bent, and a bending degree of the cell gap may be
substantially reduced.
[0069] FIG. 4 shows a cross-sectional view of a pattern of a roof
layer shown in FIG. 2. FIG. 5 shows a perspective view of a pattern
of a roof layer shown in FIG. 4.
[0070] Referring to FIG. 4 and FIG. 5, the roof layer 360 is
disposed on the microcavities 305 neighboring in the direction in
which the gate line 121 is extended, and the dent 360d is formed
between the neighboring microcavities 305. The dent 360d may be
formed in the direction in which the data line 171 is extended.
[0071] Since the dent is formed in the roof layer in the exemplary
embodiment, it is easy to change the curvature when the substrate
110 is bent, and the upper insulating layer 370 disposed at an
upper part of the roof layer 360 is prevented from being cracked.
In FIG. 4 and FIG. 5, a thin film transistor panel 500 including a
thin film transistor, a color filter, a light blocking member, and
a pixel electrode is disposed on the substrate 110.
[0072] FIG. 6 shows a cross-sectional view of a changed pattern of
a roof layer shown in FIG. 4 according to an exemplary embodiment.
FIG. 7 shows a cross-sectional view of a changed pattern of a roof
layer shown in FIG. 6 according to an exemplary embodiment.
[0073] In FIG. 6 and FIG. 7, when at least two microcavities 305
neighboring each other from among a plurality of microcavities 305
are set to be a first group, a plurality of first groups may be
formed and the dent 360d may be formed between the first groups.
FIG. 6 shows that the first group includes two microcavities 305,
and FIG. 7 shows that the first group includes four microcavities
305 according to the exemplary embodiment.
[0074] In FIG. 6 and FIG. 7, a thin film transistor panel 500
including a thin film transistor, a color filter, a light blocking
member, and a pixel electrode is disposed on the substrate 110.
[0075] FIG. 8 shows a cross-sectional view of a changed pattern of
a roof layer shown in FIG. 3 according to an exemplary
embodiment.
[0076] The dent 360d is passed through the roof layer 360 to form a
roof layer penetrator 360p extending to and exposing an open region
(OA). In this instance, the open region (OA) for exposing the lower
insulating layer 350 may be formed, and the lower insulating layer
350 may contact the upper insulating layer 370 in the open region
(OA). The contents described with reference to FIG. 3 except the
above-noted difference are applicable to the present exemplary
embodiment.
[0077] A method for manufacturing a liquid crystal display
according to an exemplary embodiment will now be described with
reference to FIG. 9 to FIG. 19. The manufacturing method according
to an exemplary embodiment to be described hereinafter is variable
to other forms.
[0078] FIG. 9 to FIG. 19 show cross-sectional views of a method for
manufacturing a liquid crystal display according to an exemplary
embodiment. FIGS. 9, 11, 13, 15, 16, and 18 sequentially show
cross-sectional views with respect to a line II-II of FIG. 1. FIGS.
10, 12, 14, 17, and 19 show cross-sectional views with respect to a
line of FIG. 1.
[0079] Referring to FIG. 1, FIG. 9, and FIG. 10, in order to form a
switch on the substrate 110, a gate line 121 extended in the
horizontal direction is formed, a gate insulating layer 140 is
formed on the gate line 121, semiconductor layers 151 and 154 are
formed on the gate insulating layer 140, and a source electrode 173
and a drain electrode 175 are formed. In this instance, the data
line 171 connected to the source electrode 173 may be formed to
cross the gate line 121 and be extended in the perpendicular
direction.
[0080] Data conductors 171, 173, and 175 including a source
electrode 173, a drain electrode 175, and a data line 171 are
formed, and a first interlayer insulating layer 180a is formed on
the exposed semiconductor layer 154.
[0081] A color filter 230 is formed at a position that corresponds
to the pixel area on the first interlayer insulating layer 180a,
and a light blocking member 220 is formed between the color filter
230. The light blocking member 220 includes a horizontal light
blocking member 220a formed in parallel with the gate line 121 and
a perpendicular light blocking member 220b formed in parallel with
the data line 171.
[0082] A second interlayer insulating layer 180b is formed on the
color filter 230 and the light blocking member 220 to cover the
same, and it is formed to have a contact hole 185 for electrically
and physically connecting the pixel electrode 191 and the drain
electrode 175.
[0083] A pixel electrode 191 is formed on the second interlayer
insulating layer 180b, and a sacrificial layer 300 is formed on the
pixel electrode 191. As shown in FIG. 10, an opening (OPN) is
formed in parallel with the data line 171 on the sacrificial layer
300. A common electrode 270, a lower insulating layer 350, a roof
layer 360, and an upper insulating layer 370 may be filled in the
opening (OPN) to form a partition wall forming part (PWP) in a
subsequent process.
[0084] Referring to FIG. 1, FIG. 11, and FIG. 12, the common
electrode 270, the lower insulating layer 350, and the roof layer
360 are sequentially formed on the sacrificial layer 300. The roof
layer 360 may be removed from the region that corresponds to the
horizontal light blocking member 220a disposed between the pixel
area neighboring in the perpendicular direction by an exposure and
development process. In this instance, a mask may be used, and a
dent 360d may be formed at an upper part of the roof layer 360
disposed between the microcavity 305 neighboring in the horizontal
direction by using the mask. In a modified exemplary embodiment,
the dent 360d may be formed at an upper part of the roof layer 360
without using the mask by increasing a gap of the sacrificial layer
300 neighboring in the horizontal direction. The gap between the
sacrificial layer 300 for forming the dent 360d without using the
mask is not specified because it is variable by a process
condition, such as a thickness of the roof layer 360.
[0085] The roof layer 360 exposes the lower insulating layer 350 to
the outside in the region that corresponds to the horizontal light
blocking member 220a. In other words, an opening in the roof layer
extends to and exposes the lower insulating layer 350 to the
outside in the region that corresponds to the horizontal light
blocking member 220a. In this instance, the common electrode 270,
the lower insulating layer 350, and the roof layer 360 fill the
opening (OPN) (see FIG. 10) of the perpendicular light blocking
member 220b and form the partition wall forming part (PWP).
[0086] Referring to FIG. 1, FIG. 13, and FIG. 14, an upper
insulating layer 370 is formed to cover the roof layer 360 and the
exposed lower insulating layer 350. The upper insulating layer 370
may be formed while covering the dent 360d of the roof layer
360.
[0087] Referring to FIG. 15, when the upper insulating layer 370,
the lower insulating layer 350, and the common electrode 270 are
dry etched, the upper insulating layer 370, the lower insulating
layer 350, and the common electrode 270 are partially removed to
form the liquid crystal injection hole forming region 307FP. In
this instance, the upper insulating layer 370 may cover the side of
the roof layer 360, and without being restricted to this, the side
of the roof layer 360 may be exposed by removing the upper
insulating layer 370 covering the side of the roof layer 360.
[0088] Referring to FIG. 16 and FIG. 17, the sacrificial layer 300
is removed through the liquid crystal injection hole forming region
307FP by performing an oxygen (O.sub.2) ashing process or a wet
etching process. In this instance, a microcavity 305 including a
liquid crystal injection hole 307 is formed. The microcavity 305 is
an empty space from which the sacrificial layer 300 is removed.
[0089] Referring to FIG. 18 and FIG. 19, an alignment material is
injected through the liquid crystal injection hole 307 to form
alignment layers 11 and 21 on the pixel electrode 191 and the
common electrode 270. In detail, an alignment material including a
solid and a solvent is injected through the liquid crystal
injection hole 307, and a bake process is then performed.
[0090] A liquid crystal material including liquid crystal molecules
310 is injected into the microcavity 305 through the liquid crystal
injection hole 307 by using an inkjet method.
[0091] When a capping layer 390 is formed to cover the liquid
crystal injection hole 307 and the liquid crystal injection hole
forming region 307FP on the upper insulating layer 370, the liquid
crystal display as shown in FIG. 2 may be formed.
[0092] While the inventive concept has been described in connection
with what is presently considered to be practical exemplary
embodiments, it is to be understood that the inventive concept is
not limited to the disclosed embodiments, but, on the contrary, is
intended to cover various modifications and equivalent arrangements
included within the spirit and scope of the appended claims.
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