U.S. patent application number 15/096294 was filed with the patent office on 2017-01-12 for active device and manufacturing method thereof.
The applicant listed for this patent is E Ink Holdings Inc.. Invention is credited to Chao-Hsuan Chen, Cheng-Hang Hsu, Chuang-Chuang Tsai, Hsiao-Wen Zan.
Application Number | 20170012227 15/096294 |
Document ID | / |
Family ID | 57731364 |
Filed Date | 2017-01-12 |
United States Patent
Application |
20170012227 |
Kind Code |
A1 |
Zan; Hsiao-Wen ; et
al. |
January 12, 2017 |
ACTIVE DEVICE AND MANUFACTURING METHOD THEREOF
Abstract
An active device is disposed on a substrate and includes a gate,
an organic active layer, a gate insulation layer, a plurality of
crystal induced structures, a source and a drain. The gate
insulation layer is disposed between the gate and the organic
active layer. The crystal induced structures distribute in the
organic active layer and directly contact with the substrate or the
gate insulation layer. The source and the drain are disposed on two
opposite sides of the organic active layer, wherein a portion of
the organic active layer is exposed between the source and the
drain.
Inventors: |
Zan; Hsiao-Wen; (Hsinchu,
TW) ; Tsai; Chuang-Chuang; (Hsinchu, TW) ;
Chen; Chao-Hsuan; (Hsinchu, TW) ; Hsu;
Cheng-Hang; (Hsinchu, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
E Ink Holdings Inc. |
Hsinchu |
|
TW |
|
|
Family ID: |
57731364 |
Appl. No.: |
15/096294 |
Filed: |
April 12, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/0558 20130101;
H01L 51/0012 20130101 |
International
Class: |
H01L 51/05 20060101
H01L051/05 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 6, 2015 |
TW |
104121837 |
Claims
1. An active device, disposed on a substrate and comprising: a
gate; an organic active layer; a gate insulation layer, disposed
between the gate and the organic active layer; a plurality of
crystal induced structures, distributing in the organic active
layer, wherein the crystal induced structures directly contact with
the substrate or the gate insulation layer; and a source and a
drain, disposed on two opposite sides of the organic active
layer.
2. The active device as recited in claim 1, wherein the crystal
induced structures separate from each other and comprise a
plurality of point-shaped protrusions or a plurality of
strip-shaped protrusions.
3. The active device as recited in claim 1, wherein the crystal
induced structures are arranged in array or arranged
dispersedly.
4. The active device as recited in claim 1, wherein shapes or sizes
of the crystal induced structures are the same or different.
5. The active device as recited in claim 1, wherein the crystal
induced structures are a plurality of nano-metal structures
separated from each other or a plurality of silver-oxide nanowires
partially overlapped with each other.
6. The active device as recited in claim 1, wherein two adjacent
structures of the crystal induced structures are separated by a
distance, and the distance is from 100 nanometers to 10
micrometers.
7. The active device as recited in claim 1, further comprising: a
plurality of self-assembled monolayers, respectively located
between the crystal induced structures and the organic active
layer.
8. The active device as recited in claim 7, wherein materials of
the self-assembled monolayers comprise pentafluorobenzene thiol,
2-mercaptoethanol (C2H6OS), octadecylphosphonic acid (OPA), or
materials having thiol (SH) or phosphate particles.
9. The active device as recited in claim 1, wherein the organic
active layer is located between the gate and the substrate, and the
source and the drain are located between the gate insulation layer
and the substrate.
10. The active device as recited in claim 1, wherein a distribution
density of the crystal induced structures adjacent to the source
and the drain is less than a distribution density of the crystal
induced structures at a portion of the organic active layer exposed
between the source and the drain.
11. The active device as recited in claim 1, wherein a portion of
the organic active layer is exposed between the source and the
drain.
12. A manufacturing method of an active device, comprising: forming
a gate on a substrate; forming a gate insulation layer on the
substrate, wherein the gate insulation layer covers the gate;
forming a plurality of crystal induced structures on the gate
insulation layer, wherein the crystal induced structures directly
contact with the gate insulation layer; coating the gate insulation
layer with an organic semiconductor material, wherein the crystal
induced structures induce the organic semiconductor material to
form crystals and to define an organic active layer; and forming a
source and a drain on the organic active layer, wherein a portion
of the organic active layer is exposed between the source and the
drain.
13. The manufacturing method of the active device as recited in
claim 12, wherein methods of forming the crystal induced structures
comprise nanoimprint method, spin coating method, slit coating
method, contact coating method, ink jet coating method, or screen
printing coating method.
14. The manufacturing method of the active device as recited in
claim 12, wherein the crystal induced structures induce the organic
semiconductor material, so as to grow crystals of the organic
semiconductor material from the crystal induced structures, and to
form the organic active layer having at least a grain boundary.
15. The manufacturing method of the active device as recited in
claim 12, further comprising: performing an acidulation process or
a plasma treatment process to oxidize the crystal induced
structures before coating the gate insulation layer with the
organic semiconductor material, wherein the crystal induced
structures are a plurality of silver nanowires partially overlapped
with each other.
16. The manufacturing method of the active device as recited in
claim 12, further comprising: forming a plurality of self-assembled
monolayer particles on the crystal induced structures before
coating the gate insulation layer with the organic semiconductor
material; and a plurality of self-assembled monolayers are formed
between the crystal induced structures and the organic active layer
after coating the gate insulation layer with the organic
semiconductor material.
17. The manufacturing method of the active device as recited in
claim 16, wherein materials of the self-assembled monolayers
comprise pentafluorobenzene thiol, 2-mercaptoethanol (C2H6OS),
octadecylphosphonic acid (OPA), or materials having thiol (SH) or
phosphate particles.
18. A manufacturing method of an active device, comprising: forming
a source and a drain on a substrate, wherein a portion of the
substrate is exposed between the source and the drain; forming a
plurality of crystal induced structures on the source, the drain,
and the portion of the substrate exposed between the source and the
drain, wherein the crystal induced structures directly contact with
the portion of the substrate, the source, and the drain; coating
the source, the drain, and the portion of the substrate exposed
between the source and the drain with an organic semiconductor
material, wherein the crystal induced structures induce the organic
semiconductor material to form crystals and to define an organic
active layer, and the organic active layer covers the source, the
drain, and the portion of the substrate exposed between the source
and the drain; forming a gate insulation layer on the substrate,
wherein the gate insulation layer covers the organic active layer,
the source, and the drain; and forming a gate on the gate
insulation layer.
19. The manufacturing method of the active device as recited in
claim 18, wherein methods of forming the crystal induced structures
comprise nanoimprint method, spin coating method, slit coating
method, contact coating method, ink jet coating method, or screen
printing coating method.
20. The manufacturing method of the active device as recited in
claim 18, wherein the crystal induced structures induce the organic
semiconductor material, so as to grow crystals of the organic
semiconductor material from the crystal induced structures, and to
form the organic active layer having at least a grain boundary.
21. The manufacturing method of the active device as recited in
claim 18, further comprising: forming a plurality of self-assembled
monolayer particles on the crystal induced structures before
coating the source, the drain, and the portion of the substrate
exposed between the source and the drain with the organic
semiconductor material; and a plurality of self-assembled
monolayers are formed between the crystal induced structures and
the organic active layer after coating the source, the drain, and
the portion of the substrate exposed between the source and the
drain with the organic semiconductor material.
22. The manufacturing method of the active device as recited in
claim 18, wherein materials of the self-assembled monolayers
comprise pentafluorobenzene thiol, 2-mercaptoethanol (C2H6OS),
octadecylphosphonic acid (OPA), or materials having thiol (SH) or
phosphate particles.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the priority benefit of Taiwan
application serial no. 104121837, filed on Jul. 6, 2015. The
entirety of the above-mentioned patent application is hereby
incorporated by reference herein and made a part of this
specification.
BACKGROUND OF THE INVENTION
[0002] Field of the Invention
[0003] The invention relates to a semiconductor device and a
manufacturing method thereof, and more particularly, to an active
device and a manufacturing method thereof.
[0004] Description of Related Art
[0005] Currently, when the organic semiconductor film is applied to
the organic thin film transistor, the methods of film
crystallization are used to increase the carrier mobility. However,
there is no way to control the crystalline orientation of the
crystal structure of the film, so that the film after being formed
has a problem that the uniformity is not good. Generally, the film
is formed by the organic solution in the solution process, and the
crystals are grown nondirectionally, so that the annealing process
is further performed to to improve the property of the film. In
other words, the crystalline orientation of the crystal structure
of the film cannot be effectively controlled by this method.
SUMMARY OF THE INVENTION
[0006] The invention provides an active device having a good
crystalline uniformity film.
[0007] The invention also provides a manufacturing method of an
active device, which is adapted to fabricate the above-mentioned
active device.
[0008] The active device in the invention is disposed on a
substrate and includes a gate, an organic active layer, a gate
insulation layer, a plurality of crystal induced structures, a
source and a drain. The gate insulation layer is disposed between
the gate and the organic active layer. The crystal induced
structures distribute in the organic active layer, wherein the
crystal induced structures directly contact with the substrate or
the gate insulation layer. The source and the drain are disposed on
two opposite sides of the organic active layer, wherein a portion
of the organic active layer is exposed between the source and the
drain.
[0009] In one embodiment of the invention, the crystal induced
structures separate from each other and include a plurality of
point-shaped protrusions or a plurality of strip-shaped
protrusions.
[0010] In one embodiment of the invention, the crystal induced
structures are arranged in array or arranged dispersedly.
[0011] In one embodiment of the invention, the shapes or the sizes
of the crystal induced structures are the same or different.
[0012] In one embodiment of the invention, the crystal induced
structures are a plurality of nano-metal structures separated from
each other or a plurality of silver-oxide nanowires partially
overlapped with each other.
[0013] In one embodiment of the invention, wherein two adjacent
structures of the crystal induced structures are separated by a
distance, and the distance is from 100 nanometers to 10
micrometers.
[0014] In one embodiment of the invention, the active device
further comprises a plurality of self-assembled monolayers which
are respectively located between the crystal induced structures and
the organic active layer.
[0015] In one embodiment of the invention, the materials of the
self-assembled monolayers comprise pentafluorobenzene thiol,
2-mercaptoethanol (C2H6OS), octadecylphosphonic acid (OPA), or
materials having thiol (SH) or phosphate particles.
[0016] In one embodiment of the invention, the organic active layer
is located between the gate and the substrate, and the source and
the drain are located between the gate insulation layer and the
substrate.
[0017] In one embodiment of the invention, a distribution density
of the crystal induced structures adjacent to the source and the
drain is less than a distribution density of the crystal induced
structures at a portion of the organic active layer exposed between
the source and the drain.
[0018] The invention provides a manufacturing method of an active
device, which includes following steps. Forming a gate on a
substrate. Forming a gate insulation layer on the substrate,
wherein the gate insulation layer covers the gate. Forming a
plurality of crystal induced structures on the gate insulation
layer, wherein the crystal induced structures directly contact with
the gate insulation layer. Coating the gate insulation layer with
an organic semiconductor material, wherein the crystal induced
structures induce the organic semiconductor material to form
crystals and to define an organic active layer. Forming a source
and a drain on the organic active layer, wherein a portion of the
organic active layer is exposed between the source and the
drain.
[0019] In one embodiment of the invention, the methods of forming
the crystal induced structures include nanoimprint method, spin
coating method, slit coating method, contact coating method, ink
jet coating method, or screen printing coating method, etc.
[0020] In one embodiment of the invention, the crystal induced
structures induce the organic semiconductor material, so as to grow
crystals of the organic semiconductor material from the crystal
induced structures, and to form the organic active layer having at
least a grain boundary.
[0021] In one embodiment of the invention, the manufacturing method
of the active device further includes performing an acidulation
process or a plasma treatment process to oxidize the crystal
induced structures before coating the gate insulation layer with
the organic semiconductor material, wherein the crystal induced
structures are a plurality of silver nanowires partially overlapped
with each other.
[0022] In one embodiment of the invention, the manufacturing method
of the active device further include forming a plurality of
self-assembled monolayer particles on the crystal induced
structures before coating the gate insulation layer with the
organic semiconductor material; and a plurality of self-assembled
monolayers are formed between the crystal induced structures and
the organic active layer after coating the gate insulation layer
with the organic semiconductor material.
[0023] In one embodiment of the invention, the materials of the
self-assembled monolayers comprise pentafluorobenzene thiol,
2-mercaptoethanol (C2H6OS), octadecylphosphonic acid (OPA), or
materials having thiol (SH) or phosphate particles.
[0024] The invention provides a manufacturing method of an active
device, which includes following steps. Forming a source and a
drain on a substrate, wherein a portion of the substrate is exposed
between the source and the drain. Forming a plurality of crystal
induced structures on the source, the drain, and the portion of the
substrate exposed between the source and the drain, wherein the
crystal induced structures directly contact with the portion of the
substrate, the source, and the drain. Coating the source, the
drain, and the portion of the substrate exposed between the source
and the drain with an organic semiconductor material, wherein the
crystal induced structures induce the organic semiconductor
material to form crystals and to define an organic active layer,
and the organic active layer covers the source, the drain, and the
portion of the substrate exposed between the source and the drain.
Forming a gate insulation layer on the substrate, wherein the gate
insulation layer covers the organic active layer, the source, and
the drain. Forming a gate on the gate insulation layer.
[0025] In one embodiment of the invention, the methods of forming
the crystal induced structures include nanoimprint method, spin
coating method, slit coating method, contact coating method, ink
jet coating method, or screen printing coating method, etc.
[0026] In one embodiment of the invention, the crystal induced
structures induce the organic semiconductor material, so as to grow
crystals of the organic semiconductor material from the crystal
induced structures, and to form the organic active layer having at
least a grain boundary.
[0027] In one embodiment of the invention, the manufacturing method
of the active device further includes forming a plurality of
self-assembled monolayer particles on the crystal induced
structures before coating the source, the drain, and the portion of
the substrate exposed between the source and the drain with the
organic semiconductor material; and a plurality of self-assembled
monolayers are formed between the crystal induced structures and
the organic active layer after coating the source, the drain, and
the portion of the substrate exposed between the source and the
drain with the organic semiconductor material.
[0028] In one embodiment of the invention, the materials of the
self-assembled monolayers comprise pentafluorobenzene thiol,
2-mercaptoethanol (C2H6OS), octadecylphosphonic acid (OPA), or
materials having thiol (SH) or phosphate particles.
[0029] Based on the above, the organic semiconductor material is
induced to form crystals via the crystal induced structures,
wherein the crystals of the organic semiconductor material are
preferably grown from the crystal induced structures, so as to form
the organic active layer which has a good uniformity and a good
crystallinity. Therefore, the active device of the invention can
have a good crystalline uniformity film.
[0030] In order to make the aforementioned and other features and
advantages of the invention more comprehensible, embodiments
accompanying figures are described in detail below.
BRIEF DESCRIPTION OF THE DRAWINGS
[0031] The accompanying drawings are included to provide further
understanding, and are incorporated in and constitute a part of
this specification. The drawings illustrate exemplary embodiments
and, together with the description, serve to explain the principles
of the invention.
[0032] FIG. 1 is a perspective schematic view of an active device
according to one embodiment of the invention.
[0033] FIG. 2A(a) to FIG. 2D are perspective schematic views
illustrating a manufacturing method of an active device according
to one embodiment of the invention.
[0034] FIG. 3 is a cross-sectional schematic view illustrating an
active device according to another embodiment of the invention.
[0035] FIG. 4A to FIG. 4E are perspective schematic views
illustrating a manufacturing method of an active device according
to another embodiment of the invention.
DESCRIPTION OF THE EMBODIMENTS
[0036] FIG. 1 is a perspective schematic view of an active device
according to one embodiment of the invention. Referring to FIG. 1,
in the present embodiment, the active device 100a is disposed on a
substrate 10 and includes a gate 110a, a gate insulation layer
120a, an organic active layer 130a, a plurality of crystal induced
structures 140a, a source 150a and a drain 160a. The gate
insulation layer 120a is disposed between the gate 110a and the
organic active layer 130a. The crystal induced structures 140a
distribute in the organic active layer 130a, wherein the crystal
induced structures 140a directly contact with the gate insulation
layer 120a and separate from each other. The source 150a and the
drain 160a are disposed on two opposite sides of the organic active
layer 130a, wherein a portion of the organic active layer 130a is
exposed between the source 150a and the drain 160a.
[0037] To be more specific, the active device 100a of the present
embodiment is disposed on the substrate 10, wherein the gate 110a
is disposed on the substrate 10 and directly contact with the
substrate 10. The gate insulation layer 120a covers the gate 110a
and a part of the substrate 10, and the crystal induced structures
140a directly contact with the gate insulation layer 120a, wherein
the crystal induced structures 140a are embodied to be arranged in
array on the gate insulation layer 120a, but the invention is not
limited thereto. As shown in FIG. 1, the crystal induced structures
140a in the present embodiment are, for example, a plurality of
point-shaped protrusions (such as a cylindrical shape), wherein the
shapes and the sizes of the crystal induced structures 140a are
substantially the same. In other words, the shapes of the crystal
induced structures 140a are exactly the same, and the sizes of the
crystal induced structures 140a are also exactly the same, but the
invention is not limited thereto. Preferably, the crystal induced
structures 140a are embodied as a plurality of nano-metal
structures, wherein the diameter of each of the nano-metal
structures is, for example, from 5 nanometers to 300 nanometers. In
addition, two adjacent structures of the crystal induced structures
140a are separated by a distance D, preferably, the distance D is
from 100 nanometers to 10 micrometers. The organic active layer
130a covers the crystal induced structures 140a, so that the
crystal induced structures 140a distribute in the organic active
layer 130a. The source 150a and the drain 160a directly contact
with the organic active layer 130a and expose a portion of the
organic active layer 130a.
[0038] As shown in FIG. 1, the gate 110a, the gate insulation layer
120a, the organic active layer 130a, the crystal induced structures
140a, the source 150a, and the drain 160a together construct the
active device 100a which substantially is a bottom gate thin-film
transistor. In other words, the active device 100a of the present
embodiment is embodied as a transistor, but the invention is not
limited thereto. In other embodiments not shown, the active device
can also be a sensor or a solar cell. In addition, it is noted that
the crystal induced structures 140a of the present embodiment are
separated from each other, so that the source 150a and the drain
160a are not electrically conducted to each other via the crystal
induced structures 140a. In other words, the configuration of the
crystal induced structures 140a does not interfere with the
electrical layout of the active device 100a.
[0039] According to FIG. 2A to FIG. 2D, the detailed description of
the manufacturing method of the active device 100a' of the
invention is carried out as followings. It should be noted here,
the below embodiments utilize the same label and partial contents
of the above embodiment, wherein the same labels are adopted to
represent same or similar elements and the description of similar
technical content should be referenced to the above-mentioned
embodiments. Hereinafter, the description of similar technical
content is omitted.
[0040] FIG. 2A(a) to FIG. 2D are perspective schematic views
illustrating a manufacturing method of an active device according
to one embodiment of the invention. According to the manufacturing
method of the thin-film transistor structure of the present
embodiment, firstly, referring to FIG. 2A(a), forming the gate 110a
on the substrate 10, wherein the material of the substrate 10 is,
for example, glass, plastic or other appropriate materials.
[0041] Sequentially, forming the gate insulation layer 120a on the
substrate 10, wherein the gate insulation layer 120a covers the
gate 110a. Herein, the material of the gate insulation layer 120a
is, for example, silicon oxide, silicon nitride, silicon
oxynitride, aluminium oxide, hafnium oxide, antimony tin oxide, or
etc. materials used in the gate insulating layer 120a.
[0042] Sequentially, forming a plurality of crystal induced
structures 140a on the gate insulation layer 120a, wherein the
crystal induced structures 140a directly contact with the gate
insulation layer 120a and the crystal induced structures 140a are
separated from each other. In the present embodiment, the method of
forming the crystal induced structures 140a is, for example,
nanoimprint method, spin coating method, slit coating method,
contact coating method, ink jet coating method, or screen printing
coating method, etc. As shown in FIG. 2A(a), the crystal induced
structures 140a is embodied to be arranged in array on the gate
insulation layer 120a, wherein the crystal induced structures 140a
are, for example, a plurality of point-shaped protrusions (such as
a cylindrical shape), and the shapes and the sizes of the crystal
induced structures 140a are substantially the same. Preferably, the
crystal induced structures 140a are embodied as a plurality of
nano-metal structures, wherein the diameter of each of the
nano-metal structures is, for example, from 5 nanometers to 300
nanometers. In addition, two adjacent structures of the crystal
induced structures 140a are separated by a distance D, preferably,
the distance D is from 100 nanometers to 10 micrometers.
[0043] It is noted that the invention is not limited to the
structural shape and the arrangement method of the crystal induced
structures 140a. As shown in FIG. 2A(b), the crystal induced
structures 140b are arranged dispersedly; or, as shown in FIG.
2A(c), the distribution density of the crystal induced structures
140c at the middle of the gate insulation layer 120a presents a low
density, and the distribution density of the crystal induced
structures 140c at two sides of the gate insulation layer 120a
presents a high density, namely, the distribution density of the
crystal induced structures 140c adjacent to the source 150a and the
drain 160a is higher than the distribution density of the crystal
induced structures 140c at a portion of the organic active layer
130a exposed between the source 150a and the drain 160a (referring
to FIG. 1 and FIG. 2D), the purpose is forming smaller grains
adjacent to the electrode, so as to inhibit the high electrical
field effect; or, as shown in FIG. 2A(d), the shapes of the crystal
induced structures 140d are the same but the sizes of the crystal
induced structures 140d are completely different, for example, the
sizes of the crystal induced structures 140d at the middle of the
gate insulation layer 120a are bigger than the sizes of the crystal
induced structures 140d at two sides of the gate insulation layer
120a but the shapes of the crystal induced structures 140d are the
same, the purpose is preventing the current leakage problem between
the source 150a and the drain 160a; certainly, in other embodiments
not shown, the shapes of the crystal induced structures are
different but the sizes of the crystal induced structures are the
same; or, the shapes and the sizes of the crystal induced
structures are different; or, as shown in FIG. 2A(e), the crystal
induced structures 140e are, for example, a plurality of
strip-shaped protrusions, the purpose is inducing long trip grains,
so as to increase the carrier mobility at the long edges in the
longitudinal direction, and to increase the conductive current; or,
as shown in FIG. 2A(f), the crystal induced structures 140f are,
for example, a plurality of strip-shaped protrusions which present
an inclined angle, such as a 45 degree, and be arranged at
intervals on the gate insulation layer 120a, the purpose is
preventing electric leakage formed by the strip grain boundary. The
above-mentioned embodiments still belong to a technical means
adoptable in the present invention and fall within the protection
scope of the present invention.
[0044] Subsequently, referring to FIG. 2B, in order to increase the
surface energy of the crystal induced structures 140a, a plurality
of self-assembled monolayer particles 170 are optionally formed on
the crystal induced structures 140a.
[0045] After that, referring to FIG. 2C, coating the gate
insulation layer 120a with an organic semiconductor material 130,
wherein the crystal induced structures 140a induce the organic
semiconductor material 130 to form crystals and to define an
organic active layer 130a. Specifically, the crystal induced
structures 140a of the present embodiment can induce the organic
semiconductor material 130, so as to grow crystals of the organic
semiconductor material 130 from the crystal induced structures
140a, and to form the organic active layer 130a which has at least
a grain boundary B. Because the self-assembled monolayer particles
170 are optionally formed on the crystal induced structures 140a, a
plurality of self-assembled monolayers 170a are formed between the
crystal induced structures 140a and the organic active layer 130a.
Herein, the self-assembled monolayers 170a has a property that the
self-assembled monolayers 170a can change the surface energy of the
crystal induced structures 140a, so as to improve effectively the
arrangement method of the particles in the organic active layer
130a when crystallizing, to control effectively the crystal
structure of the organic active layer 130a, and to form a layer
having a good uniformity and a good crystallinity. In addition, the
organic semiconductor material 130 of the present embodiment is an
organic semiconductor material which has solubility, such as
5,11-bis (triethylsilylethynyl) anthradithiophene (DiF-TESADT),
6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-pentacene),
etc. Furthermore, the materials of the self-assembled monolayers
comprise pentafluorobenzene thiol, 2-mercaptoethanol (C2H6OS),
octadecylphosphonic acid (OPA), or materials having thiol (SH) or
phosphate particles.
[0046] Finally, referring to FIG. 2D, forming a source 150a and a
drain 160a on the organic active layer 130a, wherein a portion of
the organic active layer 130a is exposed between the source 150a
and the drain 160a. Herein, the material of the source 150a and the
drain 160a is, for example, metal which is the same as or different
from the metal adopted by the gate 110a, but the invention is not
limited thereto. Thereby, the fabrication of the active device
100a' is completed.
[0047] FIG. 3 is a cross-sectional schematic view illustrating an
active device according to another embodiment of the invention.
Referring to FIG. 3, the active device 100g of the present
embodiment is similar to the active device 100a in FIG. 1, but the
main differences the two active devices are that the active device
100g of the present embodiment is embodied as a top gate thin-film
transistor, wherein the organic active layer 130g is located
between the gate insulation layer 120g and the substrate 10, and
the source 150g and the drain 160g are located between the gate
insulation layer 120g and the substrate 10.
[0048] To be more specific, in the process, firstly, forming the
source 150g and the drain 160g on a substrate 10, wherein the
portion of the substrate 10 is exposed between the source 150g and
the drain 160g. Subsequently, forming the crystal induced
structures 140g on the source 150g, the drain 160g, and the portion
of the substrate 10 exposed between the source 150g and the drain
160g, wherein the crystal induced structures 140g directly contact
with the portion of the substrate 10, the source 150g, and the
drain 160g and the crystal induced structures 140g separate from
each other. After that, coating the source 150g, the drain 160g,
and the portion of the substrate 10 exposed between the source 150g
and the drain 160g with the organic semiconductor material 130,
wherein the crystal induced structures 140g induce the organic
semiconductor material 130 to form crystals and to define the
organic active layer 130g, and the organic active layer 130g covers
the source 150g, the drain 160g, and the portion of the substrate
10 exposed between the source 150g and the drain 160g. Forming the
gate insulation layer 120g on the substrate 10, wherein the gate
insulation layer 120g covers the organic active layer 130g, the
source 150g, and the drain 160g. Forming the gate 110g on the gate
insulation layer 120g. Thereby, the fabrication of the active
device 100g is completed.
[0049] It is noted that the active device 100g without the
self-assembled monolayers 170a of the present embodiment is
explained as an example. Certainly, the manufacturing method of the
active device 100g of the present embodiment can be the same as the
manufacturing method of the active device 100a' of the
above-mentioned embodiment, the manufacturing method of the active
device 100g further includes optionally forming a plurality of
self-assembled monolayer particles 170 (as shown in FIG. 2B) on the
crystal induced structures 140g before coating the source 150g, the
drain 160g, and the portion of the substrate 10 exposed between the
source 150g and the drain 160g with the organic semiconductor
material 130; and a plurality of self-assembled monolayers 170a (as
shown in FIG. 2C) are formed between the crystal induced structures
140g and the organic active layer 130g after coating the source
150g, the drain 160g, and the portion of the substrate 10 exposed
between the source 150g and the drain 160g with the organic
semiconductor material 130. The above-mentioned embodiments still
belong to a technical means adoptable in the present invention and
fall within the protection scope of the present invention.
[0050] FIG. 4A to FIG. 4E are perspective schematic views
illustrating a manufacturing method of an active device according
to another embodiment of the invention. The manufacturing method of
the active device of the present embodiment is similar to the
manufacturing method of the active device illustrated in FIG. 2A(a)
to FIG. 2D, the main differences between two methods are described
as followings. Referring to FIG. 4A, sequentially forming the gate
110h, the gate insulation layer 120h, and the crystal induced
structures 140h on the substrate 10, wherein the gate insulation
layer 120h covers the gate 110h, and the crystal induced structures
140h directly contact with the gate insulation layer 120h. Herein,
the material of the gate 110h is, for example, silicon, and the
material of the gate insulation layer 120h is, for example, silicon
nitride, or silicon oxide. In addition, the crystal induced
structures 140h are embodied as a plurality of silver conducting
nanowires which are partially overlapped with each other.
[0051] Subsequently, referring to FIG. 4B, performing an
acidulation process or a plasma treatment process to oxidize the
crystal induced structures 140h, and to define the crystal induced
structures 140h'.
[0052] Subsequently, referring to FIG. 4C, in order to increase the
surface energy of the crystal induced structures 140h, a plurality
of self-assembled monolayer particles 170 are optionally formed on
the crystal induced structures 140h.
[0053] After that, referring to FIG. 4D, coating the gate
insulation layer 120h with an organic semiconductor material (not
shown), wherein the crystal induced structures 140h induce the
organic semiconductor material to form crystals and to define an
organic active layer 130h. Because the self-assembled monolayer
particles 170 are optionally formed on the crystal induced
structures 140h, a plurality of self-assembled monolayers 170h are
framed between the crystal induced structures 140h and the organic
active layer 130h. Herein, the self-assembled monolayers 170h has a
property that the self-assembled monolayers 170h can change the
surface energy of the crystal induced structures 140h, so as to
improve effectively the arrangement method of the particles in the
organic active layer 130h when crystallizing, to control
effectively the crystal structure of the organic active layer 130h,
and to form a layer having a good uniformity and a good
crystallinity. In addition, the materials of the self-assembled
monolayers 170a of the present embodiment are pentafluorobenzene
thiol, 2-mercaptoethanol (C2H6OS), octadecylphosphonic acid (OPA),
or materials having thiol (SH) or phosphate particles.
[0054] Finally, referring to FIG. 4E, forming a source 150h and a
drain 160h on the organic active layer 130h, wherein a portion of
the organic active layer 130h is exposed between the source 150h
and the drain 160h. Herein, the material of the source 150h and the
drain 160h is, for example, metal. Thereby, the fabrication of the
active device 100h is completed.
[0055] In summary, the organic semiconductor material is induced to
form crystals via the crystal induced structures, wherein the
crystals of the organic semiconductor material are preferably grown
by the crystal induced structures, so as to form the organic active
layer which has a good uniformity and a good crystallinity.
Therefore, the active device of the invention can having a good
crystalline uniformity film.
[0056] It will be apparent to those skilled in the art that various
modifications and variations can be made to the structure of the
invention without detaching from the scope or spirit of the
invention.
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