U.S. patent application number 15/222431 was filed with the patent office on 2017-01-12 for resist reactive ion etch (rie) process for plating.
The applicant listed for this patent is Headway Technologies, Inc.. Invention is credited to Hironori Araki, Hiroyuki Ito, Hideo Mamiya, Yoshitaka Sasaki, Kazuki Sato, Seiichiro Tomita.
Application Number | 20170011756 15/222431 |
Document ID | / |
Family ID | 56554571 |
Filed Date | 2017-01-12 |
United States Patent
Application |
20170011756 |
Kind Code |
A1 |
Araki; Hironori ; et
al. |
January 12, 2017 |
Resist Reactive Ion Etch (RIE) Process for Plating
Abstract
A magnetic write head has a plated coil with narrow pitch and is
suitable for writing at high frequencies on magnetic media with
high coercivity. The narrow pitch is obtained without such
disadvantages as overplating that has adversely affected prior art
attempts to produce such narrow pitches. The process that produces
the magnetic write head is characterized by an RIE plasma etch
using O.sub.2/N.sub.2 to etch plating trenches into a baked layer
of photoresist with the ratio of gases being 5/45 sccm so that a
dilute O.sub.2 concentration does not create unwanted side etching
of the plating trenches. In addition, a Cu seed layer is coated
with an insulating layer of Al.sub.2O.sub.3 which redeposits on the
trench sidewalls to inhibit redeposition of any Cu from the seed
layer and prevent outward growth of the plated Cu that would result
in overplating.
Inventors: |
Araki; Hironori; (Santa
Clara, CA) ; Sasaki; Yoshitaka; (Los Gatos, CA)
; Ito; Hiroyuki; (Sunnyvale, CA) ; Tomita;
Seiichiro; (Milpitas, CA) ; Sato; Kazuki;
(Sunnyvale, CA) ; Mamiya; Hideo; (Santa Clara,
CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Headway Technologies, Inc. |
Milpitas |
CA |
US |
|
|
Family ID: |
56554571 |
Appl. No.: |
15/222431 |
Filed: |
July 28, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14608586 |
Jan 29, 2015 |
9412397 |
|
|
15222431 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11B 5/3123 20130101;
G11B 5/3906 20130101; G11B 5/17 20130101; G11B 2005/0021
20130101 |
International
Class: |
G11B 5/31 20060101
G11B005/31; G11B 5/39 20060101 G11B005/39 |
Claims
1. A magnetic write head comprising: an underlayer; a plated
conducting coil formed on that underlayer, wherein that plated
conducting coil has a pitch that is approximately 0.6.mu. and shows
no evidence of overplating.
2. The write head of claim 1 wherein said plated conducting coil is
formed of Cu.
3. The write head of claim 1 wherein said plated coil is a spirally
wound coil formed in a horizontal plane.
4. The write head of claim 1 further including a magnetic pole
structure capable of being energized by said plated coil wherein
said narrow pitch of said plated coil allows said pole structure to
be characterized by a short flux path and results in high frequency
writing.
5. The write head of claim 4 further including a TAMR (thermal
assisted magnetic writing) apparatus capable of reducing the
coercivity of a magnetic recording medium whereby said high
frequency writing is effectively applied.
Description
[0001] This is a Divisional application of U.S. Ser. No.
14/608,586, filed on Jan. 29, 2015, which is herein incorporated by
reference in its entirety, and assigned to a common assignee.
BACKGROUND
[0002] 1. Technical Field
[0003] This disclosure relates to magnetic write heads that write
on magnetic recording media, particularly to the fabrication of
their magnetic coils that create the magnetic fields for
writing.
[0004] 2. Description
[0005] As hard disk drives have been increasing the recording
density of the magnetic disks on which data storage occurs, the
thin-film magnetic heads used to write and read that data have been
required to improve their performance as well. The thin-film
read/write heads most commonly in use are of a composite type,
having a structure in which a magnetism detecting device, such as a
magnetoresistive (MR) read sensor is used together with a magnetic
recording device, such as an electromagnetic coil device. These two
types of devices are laminated together and serve to read/write
data signals, respectively, from/onto magnetic disks which are the
magnetic recording media.
[0006] In general, a magnetic recording medium, on a microscopic
level of composition, is a discontinuous body in which fine
magnetic particles are assembled and held in place in a matrix.
Each of these fine magnetic particles has a single magnetic-domain
structure, so one recording bit is actually formed by a plurality
of neighboring particles. In order to enhance the recording
density, therefore, it is necessary to make the magnetic particles
smaller in size so as to reduce irregularities at the boundaries of
the bits. As the particles are made smaller, however, their volume
decreases, so that the thermal stability of the magnetization may
deteriorate. This causes a problem.
[0007] An index of the thermal stability in magnetization is given
by K.sub.UV/k.sub.BT. Here, K.sub.U is the magnetic anisotropy
energy of a magnetic fine particle, V is the volume of one magnetic
fine particle, k.sub.B is the Boltzmann constant, and T is the
absolute temperature. Making the magnetic fine particles smaller
just reduces V, which lowers K.sub.UV/k.sub.BT by itself, and
thereby worsens the thermal stability. Though K.sub.U may be made
greater at the same time as a measure against this problem, the
increase in K.sub.U also increases the coercivity of the magnetic
recording medium. However, the writing magnetic field intensity
produced by a magnetic head is substantially determined by the
saturated magnetic flux density of a soft magnetic material
constituting a magnetic pole within the head. Therefore, there can
be no writing if the coercivity exceeds a permissible value
determined by the limit of writing magnetic field intensity.
[0008] One method proposed for solving such a problem affecting the
thermal stability of magnetization is the so-called thermally
assisted magnetic recording (TAMR) scheme. In this approach, heat
is applied to a magnetic recording medium immediately before
applying a writing magnetic field, particularly while using a
magnetic material having a large value of K.sub.U. The heat then
effectively lowers the medium's coercivity at the same position
where the magnetic writing field is applied, so as to enable
writing as though it were on a medium with lowered coercivity.
[0009] This scheme is roughly classified into magnetic dominant
recording and optical dominant recording, depending on the relative
effects of the magnetic field and the optical heating. In magnetic
dominant recording, the writing is attributed to the localized
effects of the electromagnetic coil device, while the radiation
diameter of the incident light is greater than the track width
(recording width). In optical dominant recording, by contrast, the
writing is attributed to the light-radiating effect, as the
radiation diameter of the incident light is substantially the same
as the track width (recording width). Thus, the terms "magnetic
dominant recording" and "optical dominant recording" impart the
effects of spatial resolution to a magnetic field or a radiation
field, respectively.
[0010] In the thermally assisted magnetic head recording apparatus,
a light source such as a semiconductor laser is typically suggested
as the source of thermal energy. Light from a light-emitting device
is introduced into an optical waveguide. As waveguide material,
TaOx or SiON is proposed. The waveguide is surrounded with cladding
material, typically Al2O3, SiON or SiO2. The light is focused by a
plasmon generator at the distal end of the waveguide, which is
usually made of highly conductive material such as Au or Ag. There
are many kinds of plasmon generators. The light focused at the
plasmon generator is emitted, as plasmon energy, from a light exit
and heats the surface of recording media.
[0011] As indicated above, thermally assisted magnetic head
recording is a new technology for use in a future (HDD) hard disk
drive head to achieve higher recording density. To maximize the
effectiveness of this technology, the frequency extendibility
(range) of the HDD head needs to be improved at the same time. The
most effective method to improve frequency extendibility is to
shorten the magnetic path of the recording flux. One way to do this
is to make a smaller pitch coil.
[0012] The prior arts teach several methods to address the problems
of improving coil structure and performance. Hsiao et al. (U.S.
Pat. No. 7,313,858), Lee et al. (US Publ. Pat. Appl. 2006/0065620)
and Dinan et al. (U.S. Pat. No. 7,117,583) all address issues of
coil structure, but none provide a method to produce the desirable
effects of the present disclosure.
SUMMARY
[0013] The first object of this disclosure is to fabricate a write
head with a coil that has a smaller pitch and to thereby increase
the writing frequency of the write head.
[0014] A second object of this disclosure is to provide such a
smaller pitch coil by the use of a photoresist etching method that
eliminates problems found in conventional prior art processes that
limit the desired pitch reduction.
[0015] These objects will be achieved by a photoresist etching
method that prevents overplating of the coil material that then
fills the spaces (trenches) between the coil pattern (see FIG. 6
for the effects of overplating). The elimination of overplating
allows the coil layers to be more narrowly spaced (smaller pitch)
than is presently the case using standard methods of patterning and
plating.
[0016] The advantages of the present method can best be seen and
understood by a brief analysis of the process flow of prior art
methods, two of which will now be discussed:
[0017] a) photoresistive plating; and
[0018] b) conventional photoresist RIE (reactive ion etching).
[0019] Not all the steps will be shown and described here, since it
is aspects of the final results only that are needed for comparison
purposes.
[0020] Referring first to schematic FIG. 1, there is shown a side
view of a fabrication that is ready for a plating of the exemplary
Cu magnetic coils according to prior art process a). Bottom layer
10 is an underlayer typically formed of Al.sub.2O.sub.3. A seed
layer 20 of Cu has been formed on the underlayer. The Cu seed layer
will be the basis for the plating of the coils, which will also be
Cu, but other conductive plated materials are also acceptable.
[0021] Continuing with FIG. 1, a thick layer of photoresist has
been formed on the seed layer and then patterned to leave open
trenches 35 bordered by the vertical remaining patterned pieces 30
of the photoresist. Note we will use the term "photoresist" to
refer generally to photoresistive material commonly used in
photolithography to create patterns for thin-film fabrications.
[0022] Referring to schematic FIG. 2, there is shown the results 50
of plating Cu into the trenches (35 in FIG. 1), followed by removal
of the photoresist pattern pieces (30 in FIG. 1) and the stripping
of the Cu seed layer (20 in FIG. 1) from beneath the now removed
pattern pieces of photoresist. The plated Cu coil pieces 50 have a
minimum pitch of approximately 1.2.mu. (microns), which is a
minimum amount dictated by the nature of the photoresist patterning
process (e.g., effects due to thick photoresist layers). It is
virtually impossible to fabricate a much narrower pitch coil using
this method. Because the coil "thickness" (the height of the coil)
is greater than 1.mu., the photoresist thickness must be greater
than 2.mu.. The thick photoresist layer limits the narrowest coil
pitch to be approximately 2.mu..
[0023] Referring now to schematic FIG. 3, there is shown an initial
fabrication structure of prior art method b), which is a
conventional coil plating process with RIE (reactive ion etch)
patterning of photoresist. This process will be shown in somewhat
greater detail than that of the process a).
[0024] A Cu seed layer 20 is deposited on an Al.sub.2O.sub.3
underlayer 10, the Cu seed layer being between approximately 500 A
and 1000 A (angstroms) in thickness. A layer of photoresist 30 is
deposited over the seed layer to a thickness between approximately
2.mu. to 3.5.mu.. The photoresist is then typically baked at
between approximately 125.degree. (degrees) and 180.degree. C.
(Celsius). The bake produces a self-planarization (reduction of
surface height variations), so the upper surface of the resist
layer is rendered smooth. Surface height variations of the
photoresist layer are reduced each time an additional baking
process occurs. A series of further bakes between approximately 125
to 180 C reduce the photoresist 30 surface height variations to
approximately 1400 A and produce a smooth upper surface. A hard
mask layer of Al.sub.2O.sub.3 40, to be used as a pattern for the
photoresist layer 30, is then deposited on the baked photoresist to
a thickness of approximately 1000 A.
[0025] Next, referring to schematic FIG. 4, the hard photo-mask
(simply, hard mask) 40 is about to be patterned using an already
patterned photoresist layer 50 as shown (the patterning process of
layer 50 is not shown). The hard mask 40 is a layer of
Al.sub.2O.sub.3 formed to a thickness of approximately 1000 A. The
patterned photoresist layer 50 is formed to a thickness of
approximately 0.5.mu. over the hard mask to produce the patterning
of the hard mask. It is noted that the photoresist mask 50 used to
pattern the hard mask is made thinner than would normally be the
case because it makes it easier to produce a narrower pattern and
smaller pitch of approximately 0.6.mu.. A more conventional 2.mu.
to 3.5.mu. photoresist thickness would produce a pitch of more than
1.2.mu..
[0026] Referring now to schematic FIG. 5, there is shown the
resulting fabrication after the photoresist patterning and
application of an RIE etching process (arrows, 60) using that
patterning. Trenches 65 are etched through the hard mask layer 40
and the photoresist layer 30, stopping at the now exposed seed
layer 20. These trenches will serve as the forms for plating the
coil. The RIE etching process uses Cl.sub.2/BCl.sub.3 plasma to
etch the openings in the Al.sub.2O.sub.3 hard mask 40 and then an
O.sub.2 based RIE plasma etch 60 is used to create the trenches 65.
More specifically, the O.sub.2 etch is an O.sub.2/N.sub.2 etch at a
5/45 sccm rate. It is to be noted that in RIE etching of
photoresist the chemical etching may be too strong and cause the
sides of the trenches to be etched. Therefore, the O.sub.2 flow
rate is chosen to dilute the O.sub.2 component of the
O.sub.2/N.sub.2 in order to prevent the unwanted side etching.
Referring finally to schematic FIG. 6, there is shown the plating
of Cu 70 into the trenches patterned in the photoresist.
[0027] The conventional process described above with reference to
FIGS. 3-6, produces normal plating within the trenches shown in
FIG. 6, but if the trenches are wider, as shown in schematic FIG.
7, then there is a problem with overplating 80, where plated copper
residue is redeposited over the tops of the trenches. This
overplating results from the redeposition of the Cu from the
sidewalls of the trenches 80. Ideally, the Cu plating should
originate from the seed layer 20 only, so it is necessary to
eliminate the sidewalls as an unwanted source of plating growth. It
is to be noted that the etching rate to produce narrow trenches in
the photoresist is low, so in order to get good etch quality, the
wider trenches in the pattern will tend to become overetched. This
leads to overplating around the wider trenches. It will be the
process of the present disclosure to prevent this overplating.
[0028] Referring now to schematic FIG. 8, there is shown a
fabrication very much like that of FIG. 5, showing exemplary Cu
atoms 90 being deposited by plating into a trench 65 and impinging
(see heavy downward directed arrows 95) on the seed layer 20 lining
the trench bottom. Arrows 100 directed upward towards the sidewalls
of the trench boundaries represent Cu atoms leaving the seed layer
and forming re-depositions 67 along the interior sidewalls of the
trench. These re-deposited layers will contribute to the unwanted
overplating shown in FIG. 7.
[0029] Referring next to FIG. 9, there is shown schematically the
trenches now filled with the plated Cu material. Arrows upwardly
drawn from the bottom seed layer 115 and inwardly drawn from the
sidewalls 117 indicate how the trenches fill uniformly, but angled
arrows 119 drawn from the sidewalls show the origin of the
overplated regions 80.
[0030] Referring now to FIG. 10, there is shown the beneficial
effects of the presently claimed process (which will be described
in greater detail below), which includes the formation of an
additional thin, non-metallic, insulating "stopper" layer 25 on the
seed layer 20. This additional, non-metallic layer covers the
sidewalls by redeposition 27 during the RIE process that forms
trenches in the photoresist. The insulating stopper layer, which
here is a layer of Al.sub.2O.sub.3, prevents the growth of Cu
outward from the sidewalls as shown in FIG. 8 because it blocks the
redeposition of Cu from the seed layer onto the sidewalls where it
would act as an additional (and unwanted) seed layer.
[0031] However, downward directed Cu (or other) plating atoms 90 do
arrive at the seed layer 20 to produce a desirable plating effect.
This occurs because just before the Cu plating, a wet etch can
remove the redeposited layer of Al.sub.2O.sub.3 27 from the trench
sidewalls and also remove it from the seed layer 20.
[0032] It is important to note that the insulating Al.sub.2O.sub.3
does not act as a metallic (e.g. Cu) seed layer on the sidewalls
and, moreover, it blocks any redeposition of the Cu which would act
as a seed layer on the sidewalls. Furthermore, it is easily removed
by a wet etch. However, if redeposited Cu covered the sidewalls (if
they lacked the protective Al.sub.2O.sub.3), there would be plating
growth outward from the sidewalls that would lead to the unwanted
overplating of FIG. 9.
[0033] Referring to FIG. 11, there is shown the space between the
trench sidewalls is now uniformly filled with plated material 90
that grows upward (arrows 85) from the seed layer. Any remnants of
Al.sub.2O.sub.3 have been removed by a wet etch.
[0034] Referring to FIG. 12 there is shown a pictorial
representation of an upper view photomicrograph illustrating a coil
that has not been formed using the present method. There can be
seen the adverse effects of overplating which prevent the forming
of a narrow pitch.
[0035] Referring to FIG. 13, there is shown a pictorial
representation of an upper view photomicrograph illustrating a
narrow pitch coil that has been formed using the present method. In
this illustration a 300 A insulating layer of Al.sub.2O.sub.3 has
been applied over the seed layer. No overplating is observed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0036] FIG. 1 is a schematic representation of an initial step in a
prior art photolithographic process to plate Cu coils within a
patterned photoresist.
[0037] FIG. 2 is a schematic representation showing the coils
produced using the prior art process of FIG. 1.
[0038] FIG. 3 is a schematic representation of the initial
formation leading to a conventional, prior art coil plating process
using an RIE etching of a photoresist pattern.
[0039] FIG. 4 is a schematic representation of the next step of the
prior art process initiated in FIG. 3.
[0040] FIG. 5 is a schematic representation of yet a further step
in the prior art process shown in FIG. 4.
[0041] FIG. 6 is a schematic representation of the final step in
the prior art process begun in FIG. 3.
[0042] FIG. 7 is a schematic diagram showing the problem of
overplating that results from application of the prior art process
in FIGS. 3-6.
[0043] FIG. 8 is a schematic illustration showing in greater detail
the causes of the overplating shown in FIG. 7 with particular
attention shown to the role of redeposition of the seed layer on
the sidewalls.
[0044] FIG. 9 is a schematic illustration showing the illustration
of FIG. 8 with the trenches now Filled with the plated material and
the presence of overplating.
[0045] FIG. 10 is a schematic illustration analogous to that of
FIG. 8 but with the presence of redeposited insulator protection on
the sidewalls such as would result using the presently claimed
method of this disclosure.
[0046] FIG. 11 is a schematic diagram showing the effects of the
additional protection in FIG. 10 on the actual plated coil.
[0047] FIG. 12 is an illustration drawn from a microphotograph of a
plated coil, taken from above, showing the appearance of
overplating as might result from the effects of FIG. 9.
[0048] FIG. 13 is an illustration analogous to that in FIG. 12
showing the coil's appearance when the overplating is absent, as
would be the result when using the presently claimed process.
[0049] FIG. 14 is a schematic illustration of the first step in a
process-flow that implements the presently claimed process.
[0050] FIG. 15 is a schematic illustration of the second step in
that process-flow.
[0051] FIG. 16 is a schematic illustration of the third step in
that process-flow.
[0052] FIG. 17 is a schematic illustration of the fourth step in
that process-flow.
[0053] FIG. 18 is a schematic illustration of the fifth and final
step in that process-flow, leading to a plated coil such as shown
in FIG. 13.
DETAILED DESCRIPTION
[0054] We describe a process for fabricating a magnetic write head
having a plated coil with a narrow pitch that is suitable for high
frequency recording on magnetic media having high coercivity. We
also describe the write head that is fabricated using that process.
Such a write head is particularly appropriate for use in a TAMR
scheme for recording on magnetic media having high coercivity.
[0055] Referring now to FIG. 14 there is shown schematically the
first step in the present process-flow that will produce the narrow
pitch plated write coil. The illustration shows, in vertically
ascending order, an underlayer 10, preferably formed of
Al.sub.2O.sub.3. On the underlayer there is formed a Cu seed layer
20 of thickness between approximately 500 and 1000 A. On the Cu
seed layer is formed an insulating "stopper" layer 25, which in
this example is a layer of between approximately 50 A and 400 A of
Al.sub.2O.sub.3 whose purpose is both to protect the Cu seed layer
from a subsequent RIE etching process through a photoresist layer
that will next be formed on the stopper layer, and also to provide
sidewall protection from the effects of redeposition of Cu from the
plated Cu coils.
[0056] On the stopper layer 25 is then formed a layer of
photoresistive material (i.e., photoresist) 30 to a thickness of
between 2.mu. and 3.5.mu.. This photoresist layer is baked at
approximately 180.degree. C. The baking process has two purposes.
First, it insures that the photoresist layer is not removed by a
wet etch process that is used to remove the Al.sub.2O.sub.3 stopper
layer 25 before coil plating. A bake temperature below
approximately 150.degree. C. is insufficient to produce a
photoresist layer that will not also be removed by the wet etch.
The second purpose of the bake is to provide self-planarization.
The bake produces a flat upper surface of the photoresist. In our
discussion of FIG. 3, above, we noted that a series of baking
processes sequentially reduced surface height variations of the
photoresist so that a subsequent hard mask layer (described below)
could be advantageously formed on a smooth surface.
[0057] Finally, a hard mask layer 40 is formed by the deposition of
approximately 1000 A of Al.sub.2O.sub.3 on the now planarized
photoresist layer 30. This hard mask layer, which will itself be
patterned by a photoresist layer in the following figure, will then
be used to pattern layer 30 by a RIE.
[0058] Referring next to schematic FIG. 15 there is shown the
results of a photoresist patterning 50 of the hard mask layer 40
that is formed by the deposition of approximately 1000 A of
Al.sub.2O.sub.3 after the 180.degree. C. bake. The patterning is
done by the formation of a photoresist mask 50 on the
Al.sub.2O.sub.3 and then patterning the photoresist mask while it
is on the hard mask layer. In conventional photoresistive mask
patterning, the thickness of the photoresist is between
approximately 2.mu. and 3.5.mu., because the thickness of the
resist must be greater than the thickness of the plated coil; but
in this process, the layer of resist 50 is only approximately
0.5.mu. because it is used for hard-mask patterning. This much
thinner photoresist thickness is advantageous for the present photo
process. The thinner resist is easier to use in making a narrow
pattern.
[0059] Referring now to schematic FIG. 16, the photoresist pattern
is used in conjunction with a Cl.sub.2/BCl.sub.3 plasma RIE to etch
(wavy arrow 60) through the Al.sub.2O.sub.3 hard mask layer 40.
Then the photoresist layer 30 beneath the hard mask layer is etched
with an O.sub.2 based plasma RIE, in which a gas mixture
O.sub.2/N.sub.2 is fed at the rate of 5/45 sccm, with the O.sub.2
component being dilute to avoid side etching of the trench
sidewalls formed by the surfaces of the photoresist 30. During this
process, the stop layer 25 partially re-deposits (see arrows 100 in
FIG. 10) on the photoresist sidewalls that form the trenches for
the coil plating process that follows. Note that redeposition of
the stop layer of Al.sub.2O.sub.3, which is an insulator, on trench
sidewalls will not adversely affect the subsequent plating process
because it does not act as a seed layer for the plating material.
However, if there is redeposition of Cu (or whatever conductor is
being used for plating the coils) on trench sidewalls, the Cu will
play the role of a seed layer there and plated Cu will grow out
from the sidewalls as well as up from the bottom of the trench.
Sidewall outgrowth will result in overplating and must be avoided.
Any redeposition of Al.sub.2O.sub.3 on the resist sidewalls,
moreover, can be removed by a wet etch process immediately prior to
the plating of the Cu.
[0060] Referring now to schematic FIG. 17, there is shown that the
remaining Al.sub.2O.sub.3 stopper layer 25 has been removed from
the seed layer 20 by wet etching and the Cu 70 is plated on the
resulting exposed portions of the seed layer 20. This wet etching
can also remove unwanted redepositions of the Al.sub.2O.sub.3 along
the trench sidewalls.
[0061] Referring finally to schematic FIG. 18, there is shown only
the plated coils 70 remaining after a wet etch to remove the
remaining Al.sub.2O.sub.3 stopper layer (40 in FIG. 17), followed
by a resist strip of the trench walls (30 in FIG. 17), followed
then by a wet etch to remove the remaining stopper layer (25 in
FIG. 17) beneath the trench walls and, finally, an ion-milling
operation to remove remnants of the Cu seed layer (20 in FIG. 17)
beneath the stopper layer (25 in FIG. 17). The resulting coil
structure has a narrow 0.6.mu. pitch, which is the sum of the width
of the coil piece and the space between adjacent pieces.
[0062] As is understood by a person skilled in the art, the present
description is illustrative of the present disclosure rather than
limiting of the present disclosure. Revisions and modifications may
be made to methods, materials, structures and dimensions employed
in forming and providing a magnetic write head having a plated coil
of narrow pitch and, therefore, being suitable for high frequency
recording on high coercivity magnetic media, while still forming
and providing such a device and its method of formation in accord
with the spirit and scope of the present disclosure as defined by
the appended claims.
* * * * *