U.S. patent application number 14/901743 was filed with the patent office on 2016-12-22 for optoelectronic component and method for the production thereof.
The applicant listed for this patent is OSRAM OLED GmbH. Invention is credited to Richard BAISL, Christoph KEFES, Michael POPP.
Application Number | 20160372699 14/901743 |
Document ID | / |
Family ID | 51292911 |
Filed Date | 2016-12-22 |
United States Patent
Application |
20160372699 |
Kind Code |
A1 |
BAISL; Richard ; et
al. |
December 22, 2016 |
OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
Abstract
A method for producing an optoelectronic component includes
forming an optoelectronic layer structure including a functional
layer structure above a carrier, forming a frame structure
including a first metallic material on the optoelectronic layer
structure such that a region above the functional layer structure
is free of the frame structure and that the frame structure
surrounds the region, forming an adhesion layer including a second
metallic material above a covering body, applying a liquid first
alloy to the optoelectronic layer structure and/or to the adhesion
layer of the covering body in the region, coupling the covering
body to the optoelectronic layer structure such that the adhesion
layer is coupled to the frame structure and the liquid first alloy
is in direct contact with the adhesion layer and the frame
structure, and reacting part of the first alloy chemically with the
metallic materials of the frame structure and the adhesion
layer.
Inventors: |
BAISL; Richard; (Regensburg,
DE) ; KEFES; Christoph; (Regensburg, DE) ;
POPP; Michael; (Freising, DE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
OSRAM OLED GmbH |
Regensburg |
|
DE |
|
|
Family ID: |
51292911 |
Appl. No.: |
14/901743 |
Filed: |
June 30, 2014 |
PCT Filed: |
June 30, 2014 |
PCT NO: |
PCT/EP2014/063868 |
371 Date: |
December 29, 2015 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/5253 20130101;
H01L 2924/12044 20130101; H01L 2251/301 20130101; H01L 2224/83825
20130101; H01L 51/5246 20130101; H01L 24/83 20130101; H01L
2924/12041 20130101; H01L 51/5243 20130101; H01L 51/56 20130101;
H01L 2924/12041 20130101; H01L 2924/00 20130101; H01L 2924/12044
20130101; H01L 2924/00 20130101; H01L 2924/12044 20130101; H01L
2924/00012 20130101 |
International
Class: |
H01L 51/52 20060101
H01L051/52; H01L 51/56 20060101 H01L051/56 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 2, 2013 |
DE |
10 2013 106 937.1 |
Claims
1. A method for producing an optoelectronic component, the method
comprising: forming an optoelectronic layer structure comprising a
functional layer structure above a carrier, forming a frame
structure comprising a first metallic material on the
optoelectronic layer structure in such a way that a region above
the functional layer structure is free of the frame structure and
that the frame structure surrounds the region, forming an adhesion
layer comprising a second metallic material above a covering body,
applying a liquid first alloy to the optoelectronic layer structure
and/or to the adhesion layer of the covering body in the region,
coupling the covering body to the optoelectronic layer structure in
such a way that the adhesion layer is coupled to the frame
structure and the liquid first alloy is in direct physical contact
with the adhesion layer and the frame structure, and reacting at
least part of the first alloy chemically with the metallic
materials of the frame structure and the adhesion layer, as a
result of which at least one second alloy is formed which
solidifies and thus fixedly connects the covering body to the
optoelectronic layer structure.
2. The method as claimed in claim 1, wherein the melting point of
the first alloy is in a range of between -20.degree. C. and
100.degree. C.
3. The method as claimed in claim 2, wherein the first alloy is
liquid at room temperature.
4. The method as claimed in claim 1, wherein the first alloy
comprises gallium, indium, tin, copper, molybdenum, silver and/or
bismuth.
5. The method as claimed in claim 1, wherein the first and/or
second metallic material comprises aluminum, zinc, chromium,
copper, molybdenum, silver, gold, nickel, gallium, indium and/or
tin.
6. The method as claimed in claim 1, wherein the optoelectronic
layer structure comprises an encapsulation layer, and wherein the
frame structure is formed on the encapsulation layer.
7. The method as claimed in claim 1, wherein a first anti-adhesion
layer is formed laterally adjacently to the frame structure at
least in sections, the material of which first anti-adhesion layer
does not react chemically with the first alloy and/or which first
anti-adhesion layer is not wetted by the first alloy.
8. The method as claimed in claim 1, wherein a second anti-adhesion
layer is formed laterally adjacently to the adhesion layer above
the covering body, the material of which second anti-adhesion layer
does not react chemically with the first alloy and/or which first
anti-adhesion layer is not wetted by the first alloy.
9. An optoelectronic component, comprising: a carrier, a
optoelectronic layer structure comprising a functional layer
structure above the carrier, a frame structure comprising a first
metallic material above the optoelectronic layer structure, wherein
a region above the functional layer structure is free of the frame
structure and the frame structure surrounds the region, a covering
body with an adhesion layer, which comprises a second metallic
material and which is coupled to the frame structure, a liquid
first alloy arranged in the region on the optoelectronic layer
structure, and a second alloy, which emerges from a chemical
reaction of the first alloy with the metallic materials of the
frame structure and the adhesion layer, wherein the second alloy is
rigid and fixedly connects the covering body to the optoelectronic
layer structure.
10. The optoelectronic component as claimed in claim 9, wherein the
melting point of the first alloy is in a range of between
-20.degree. C. and 100.degree. C.
11. The optoelectronic component as claimed in claim 10, wherein
the first alloy is liquid at room temperature.
12. The optoelectronic component as claimed in claim 9, wherein the
first alloy comprises gallium, indium, tin and/or bismuth.
13. The optoelectronic component as claimed in claim 9, wherein the
first and/or second metallic material comprises aluminum and/or
zinc.
14. The optoelectronic component as claimed in claim 9, wherein the
optoelectronic layer structure comprises an encapsulation layer,
and wherein the frame structure is formed on the encapsulation
layer.
Description
RELATED APPLICATIONS
[0001] The present application is a national stage entry according
to 35 U.S.C. .sctn.371 of PCT application No. PCT/EP2014/063868
filed on Jun. 30, 2014 which claims priority from German
application No. 10 2013 106 937.1 filed on Jul. 2, 2013, and is
incorporated herein by reference in its entirety.
TECHNICAL FIELD
[0002] Various embodiments relate to a method for producing an
optoelectronic component, and to an optoelectronic component.
BACKGROUND
[0003] In a conventional optoelectronic component, adhesion media,
for example adhesives, solders, encapsulation layers, metal seals
and/or covering bodies, such as glass bodies, for example, are used
for connecting and/or sealing component parts of the optoelectronic
component. Applying these auxiliary media to the component parts of
the optoelectronic component that are to be connected and/or sealed
can often be relatively time-consuming, cost-intensive and/or
imprecise. Upon drying and/or upon loading caused by thermal
cycling of adhesion media and/or encapsulation layers, cracks or
holes can occur in the corresponding layers. Furthermore, during
the production of the corresponding optoelectronic components,
particles can get into the layers or between the layers. These
cracks, holes and/or particles can have the effect that the
corresponding optoelectronic component functions only to a
restricted extent or no longer functions at all.
[0004] Particularly in the case of optoelectronic surface light
sources such as OLEDs, for example, the hermetic shielding of
organic functional layer structures is important in order to ensure
for example the storage stability, for example 10 years, and/or the
lifetime in operation, for example over 10 000 hours. For example,
permeability values for moisture and/or oxygen of less than
10.sup.-6 g/cm/d can be required here. Known media for sealing
and/or encapsulating the optoelectronic components are very
sensitive with regard to particle loading, inter alia, and known
processes can even reduce the lifetime, in favor of longer storage
times. Therefore, in known methods, TFE thin-film encapsulations
are produced under a very clean atmosphere with the most minimal
particle loading, for example in a TFE process without a shadow
mask. The TFE encapsulation can be for example a CVD, ALD, PECUP
layer or some other layer. As an alternative thereto, other
encapsulation methods are also employed, for example cavity
encapsulation and glass solder encapsulation.
[0005] 25
SUMMARY
[0006] In various embodiments, a method for producing an
optoelectronic component is provided which makes it possible to
produce the optoelectronic component simply, expediently and/or
precisely, and/or to encapsulate and/or seal component parts of the
optoelectronic component simply, cost-effectively and/or
precisely.
[0007] In various embodiments, an optoelectronic component is
provided which is producible simply, expediently and/or precisely
and/or whose component parts are encapsulated and/or sealed simply,
cost-effectively and/or precisely.
[0008] In various embodiments, a method for producing an
optoelectronic component is provided, wherein an optoelectronic
layer structure including a functional layer structure is formed
above a carrier. A frame structure including a first metallic
material is formed on the optoelectronic layer structure in such a
way that a region above the functional layer structure is free of
the frame structure and that the frame structure surrounds the
region. An adhesion layer including a second metallic material is
formed above a covering body. A liquid first alloy is applied to
the first optoelectronic layer structure and/or to the adhesion
layer of the covering body in the region. The covering body is
coupled to the optoelectronic layer structure in such a way that
the adhesion layer is coupled to the frame structure and the liquid
first alloy is in direct physical contact with the adhesion layer
and the frame structure. At least part of the first alloy reacts,
for example chemically, with the metallic materials of the frame
structure and the adhesion layer, as a result of which at least one
second alloy is formed which solidifies and thus fixedly connects
the covering body to the optoelectronic layer structure.
[0009] Arranging the liquid first alloy in the region above the
functional layer structure makes it possible to produce the
optoelectronic component simply, expediently and/or precisely, and
to encapsulate and/or seal the component parts of the
optoelectronic component, in particular the covering body and the
optoelectronic layer structure, simply, cost-effectively and/or
precisely. The first alloy has a melting point that is lower than
the melting point of the second alloy. The low melting point of the
first alloy is for example below a temperature starting from which
materials of the functional layer structure, for example of organic
layers, are damaged. This enables particularly gentle production of
the optoelectronic component, as a result of which in turn the
lifetime and the storage stability can be increased.
[0010] The use of the first alloy having a low melting point in
interaction with the second or further alloys makes it possible for
a metallic sealing layer to be produced from the first and second
alloys. In this case, the melting point of the first alloy can be
chosen such that the first alloy is liquid under all operating and
storage conditions, and the melting point of the second alloy can
be chosen such that the second alloy is solid under all operating
and storage conditions. The adhesion layer may include a liquid
starting alloy including the second metallic material.
[0011] The coupling of the covering body to the optoelectronic
layer structure with the aid of the liquid first alloy takes place
at a temperature at which the first alloy is liquid and the second
alloy is not liquid. Upon contact with the metallic materials of
the frame structure and the adhesion layer, the second alloy forms
from the metals of the first alloy and the metallic materials of
the frame structure and the adhesion layer. On account of the
currently prevailing temperature, said second alloy undergoes
transition to its solid state of matter and solidifies. In this
case the covering body and the optoelectronic layer structure are
connected to one another. If this process takes place closely and
completely around the region above the functional layer structure,
in particular along the frame structure, then this region is sealed
relative to surroundings, for example in a liquid-tight and/or
gas-tight manner.
[0012] If the first alloy is applied to the optoelectronic layer
structure at a location at which the optoelectronic layer structure
has a defect, for example a crack, a hole or a particle, then the
first alloy can flow into the crack or the hole and close it or the
particle can be embedded in the liquid first alloy. This can
contribute to the fact that the optoelectronic component can be
operated over a long lifetime and/or can be stored over a long
storage time, without the functionality of the optoelectronic
component being significantly reduced.
[0013] The first alloy, the frame structure and the adhesion layer
can be formed in such a way that the first alloy remains liquid at
least in parts of the region above the functional layer structure,
even after the completion of the optoelectronic component. If a
defect then forms subsequently, even in the completed component the
first alloy can flow into the defect and close the latter.
[0014] If one of the above mentioned defects extends as far as a
layer of the functional layer structure which includes a metallic
material that reacts with the first alloy, then the second or a
further alloy can form, which then solidifies and fixedly closes
the corresponding defect.
[0015] The first alloy can be applied for example directly on an
encapsulation layer, for example a TFE layer, or on an electrode
layer, for example a cathode, of the optoelectronic component. If
contact with the metallic material, for example the cathode layer,
occurs, then the alloying of the second alloy commences, which
closes the defect. The liquid first alloy can thus make it possible
for the optoelectronic component to have a kind of self-healing
mechanism. The lifetime, a robustness and the storage stability can
be improved as a result.
[0016] The fact that the first alloy is liquid means that the first
alloy is present in a liquid state of matter. This is in contrast
to a situation in which although alloy particles are present in a
solid state, they are embodied in a liquid or viscous carrier
material such as, for example, solder balls in a solder paste. The
fact that at least one second or one further alloy is formed means
that the liquid first alloy together with the first, second or
further metallic material forms the second or the further alloy,
wherein the metallic materials can be identical or different among
one another. If the first and second metallic materials are
identical, for example, then exactly one second alloy is formed. If
the first and second metallic materials are different, then the
second alloy and a further alloy, for example a third alloy, can be
formed.
[0017] The adhesion layer can be formed integrally with the
covering body. In other words, the second adhesion layer can be
formed by the material of the covering body. By way of example, the
covering body may include a metal-containing glass including the
second metallic material. As an alternative thereto, the adhesion
layer can be formed on the covering body. By way of example, the
covering body can be coated with the adhesion layer. The first
and/or second metallic material can be for example a metal or a
semimetal. The covering body may include and/or be formed from
glass or metal, for example.
[0018] The adhesion layer, the frame structure and/or, if
appropriate, further layers, for example an encapsulation layer,
can be formed for example by vacuum evaporation, printing,
spraying, laser structuring or by means of blade coating.
Furthermore, the adhesion layer and/or the frame structure can be
present as an alloy, for example as adhesion or starting alloy,
which can initially be liquid or viscous, for example.
[0019] The method explained above increases the storage stability
by virtue of the fact that the first alloy can be introduced at
leakage locations, for example of an encapsulation layer. Moreover,
the particle resistance is increased as a result. Moreover, this
method can serve to detect leakages in encapsulation layers.
Furthermore, large surface regions can be wetted with the liquid
first alloy, as a result of which, under certain circumstances, a
better particle resistance can be obtained. Nontoxic materials can
be chosen as the liquid first alloy. Furthermore, the first alloy
can be chosen in such a way that it is not water-soluble, as a
result of which fewer to no contamination problems occur.
[0020] In various embodiments, the melting point of the first alloy
is in a range of between -20.degree. C. and 100.degree. C., in
particular between 0.degree. C. and 80.degree. C., in particular
between 20.degree. C. and 30.degree. C. This makes it possible to
process the first alloy in the liquid state at a temperature which
is harmless or at least substantially harmless for other component
parts of the optoelectronic component, for example for an organic
functional layer structure in the case of an OLED.
[0021] In various embodiments, the first alloy is liquid at room
temperature. This makes it possible to produce the optoelectronic
component particularly expediently and simply. In particular, with
the use of the first alloy, temperature regulation of the component
parts of the optoelectronic component is not necessary. In
particular, processing under ambient air in a clean room is
possible.
[0022] In various embodiments, the first alloy includes gallium,
indium, tin, copper, molybdenum, silver and/or bismuth. By way of
example, the first alloy includes GaInSn or InBiSn.
[0023] In various embodiments, the first and/or second metallic
material includes aluminum, zinc, chromium, copper, molybdenum,
silver, gold, nickel, gallium, indium and/or tin. By way of
example, it is also possible to form a plurality of layers of the
stated materials in different layer sequences. Accordingly, the
second alloy or the further alloy may include for example aluminum,
tin, magnesium, silver, copper, silver, gold, molybdenum or
zinc.
[0024] In various embodiments, the optoelectronic layer structure
includes an encapsulation layer, and the frame structure is formed
on the encapsulation layer. The encapsulation layer can be a TFE
thin-film encapsulation layer for example.
[0025] In various embodiments, a first anti-adhesion layer is
formed laterally adjacently to the frame structure at least in
sections, the material of which first anti-adhesion layer does not
react chemically with the first alloy and/or which first
anti-adhesion layer is not wetted by the first alloy. The first
anti-adhesion layer can be used to restrict the chemical reaction
between the first alloy and the metallic materials of the adhesion
layer and/or the frame structure. By way of example, within the
frame structure there can be a plurality of sections in which the
first alloy adjoins the anti-adhesion layer. In that case no second
alloy at all or only little second alloy forms in said
sections.
[0026] In various embodiments, a second anti-adhesion layer is
formed laterally adjacently to the adhesion layer above the
covering body, the material of which second anti-adhesion layer
does not react chemically with the first alloy and/or which second
anti-adhesion layer is not wetted by the first alloy. The second
anti-adhesion layer can be used, when the first alloy is applied to
the adhesion layer, to prevent the first alloy from flowing onto
the second adhesion layer and to restrict the distribution of the
first alloy to a first region.
[0027] In various embodiments, an optoelectronic component is
provided, for example the optoelectronic component which is
produced with the aid of the method explained above. The
optoelectronic component includes the carrier and the
optoelectronic layer structure, which is formed above the carrier
and which includes the functional layer structure. The frame
structure includes the first metallic material and is formed above
the optoelectronic layer structure. The region above the functional
layer structure is free of the frame structure and the frame
structure surrounds the region. The covering body has the adhesion
layer, which includes the second metallic material and which is
coupled to the frame structure. The liquid first alloy is arranged
in the region on the optoelectronic layer structure. The second
alloy emerges from the chemical reaction of the first alloy with
the metallic materials of the frame structure and the adhesion
layer, wherein the second alloy is rigid and fixedly connects the
covering body to the optoelectronic layer structure.
[0028] In various embodiments, the melting point of the first alloy
is in a range of between -20.degree. C. and 100.degree. C., in
particular between 0.degree. C. and 80.degree. C., in particular
between 20.degree. C. and 30.degree. C.
[0029] In various embodiments, the first alloy is liquid at room
temperature.
[0030] In various embodiments, the first alloy includes gallium,
indium, tin and/or bismuth.
[0031] In various embodiments, the first and/or second metallic
material include(s) aluminum, zinc, chromium, copper, molybdenum,
silver, gold, nickel, gallium, indium and/or tin. By way of
example, it is also possible to form a plurality of layers of the
stated materials in different layer sequences.
[0032] In various embodiments, the optoelectronic layer structure
includes an encapsulation layer, and the frame structure is formed
on the encapsulation layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0033] In the drawings, like reference characters generally refer
to the same parts throughout the different views. The drawings are
not necessarily to scale, emphasis instead generally being placed
upon illustrating the principles of the disclosed embodiments. In
the following description, various embodiments described with
reference to the following drawings, in which: [0034] FIG. 1 shows
first component parts of one exemplary embodiment of an
optoelectronic component in a first state during the method for
producing the optoelectronic component; [0035] FIG. 2 shows the
first component parts of the optoelectronic component in accordance
with FIG. 1 in a second state during the method for producing the
optoelectronic component; [0036] FIG. 3 shows second component
parts of the optoelectronic component in a first state during the
method for producing the optoelectronic component; [0037] FIG. 4
shows the second component parts of the optoelectronic component in
accordance with FIG. 3 in a second state during the method for
producing the optoelectronic component; [0038] FIG. 5 shows the
optoelectronic component in accordance with FIGS. 1 to 4; [0039]
FIG. 6 shows one embodiment of an optoelectronic component; [0040]
FIG. 7 shows a detail view of one embodiment of an optoelectronic
component; [0041] FIG. 8 shows a detail view of one embodiment of
an optoelectronic component.
DETAILED DESCRIPTION
[0042] In the following detailed description, reference is made to
the accompanying drawings, which form part of this description and
show for illustration purposes specific embodiments in which the
invention can be implemented. In this regard, direction terminology
such as, for instance, "at the top", "at the bottom", "at the
front", "at the back", "front", "rear", etc. is used with respect
to the orientation of the figure(s) described. Since component
parts of embodiments can be positioned in a number of different
orientations, the direction terminology serves for illustration and
is not restrictive in any way whatsoever. It goes without saying
that other embodiments can be used and structural or logical
changes can be made, without departing from the scope of protection
of the present invention. It goes without saying that the features
of the various embodiments described herein can be combined with
one another, unless specifically indicated otherwise. Therefore,
the following detailed description should not be interpreted in a
restrictive sense, and the scope of protection of the present
invention is defined by the appended claims.
[0043] In the context of this description, the terms "connected"
and "coupled" are used to describe both a direct and an indirect
connection and a direct or indirect coupling. In the figures,
identical or similar elements are provided with identical reference
signs, insofar as this is expedient.
[0044] In various embodiments, an optoelectronic component can be
an electromagnetic radiation emitting component or an
electromagnetic radiation absorbing component. An electromagnetic
radiation absorbing component can be a solar cell, for example. An
electromagnetic radiation emitting component can be for example an
electromagnetic radiation emitting semiconductor component and/or
can be formed as an electromagnetic radiation emitting diode, as an
organic electromagnetic radiation emitting diode, as an
electromagnetic radiation emitting transistor or as an organic
electromagnetic radiation emitting transistor. The radiation can be
for example light in the visible range, UV light and/or infrared
light. In this connection, the electromagnetic radiation emitting
component can be formed for example as a light emitting diode
(LED), as an organic light emitting diode (OLED), as a light
emitting transistor or as an organic light emitting transistor. In
various embodiments, the light emitting component can be part of an
integrated circuit. Furthermore, a plurality of light emitting
components can be provided, for example in a manner accommodated in
a common housing. In various embodiments, an optoelectronic
component can be designed as a top and/or bottom emitter. A top
and/or bottom emitter can also be designated as optically
transparent component, for example a transparent organic lighting
diode.
[0045] In the case of a cohesive connection, a first body can be
connected to a second body by means of atomic and/or molecular
forces. Cohesive connections can often be non-releasable
connections. In various configurations, a cohesive connection can
be realized for example as an adhesive connection, a solder
connection, for example of a glass solder or of a metal solder or
as a welded connection.
[0046] In various embodiments, the term "translucent" or
"translucent layer" can be understood to mean that a layer is
transmissive to light, for example to the light generated by the
light emitting component, for example in one or more wavelength
ranges, for example to light in a wavelength range of visible light
(for example at least in a partial range of the wavelength range of
from 380 nm to 780 nm). By way of example, in various embodiments,
the term "translucent layer" should be understood to mean that
substantially the entire quantity of light coupled into a structure
(for example a layer) is also coupled out from the structure (for
example layer), wherein part of the light can be scattered in this
case.
[0047] In various embodiments, the term "transparent" or
"transparent layer" can be understood to mean that a layer is
transmissive to light (for example at least in a partial range of
the wavelength range of from 380 nm to 780 nm), wherein light
coupled into a structure (for example a layer) is also coupled out
from the structure (for example layer) substantially without
scattering or light conversion.
[0048] A metallic material may include or be a metal and/or a
semimetal, for example.
[0049] FIG. 1 shows first component parts of one embodiment of an
optoelectronic component 10 in a first state during a method for
producing the optoelectronic component 10. The optoelectronic
component 10 includes a carrier 12. The carrier 12 can be formed as
a protective layer, for example. The carrier 12 can serve for
example as a carrier element for electronic elements or layers, for
example light emitting elements. By way of example, the carrier 12
may include or be formed from glass, quartz and/or a semiconductor
material. Furthermore, the carrier 12 may include or be formed from
a plastics film or a laminate including one or including a
plurality of plastics films. The plastic may include or be formed
from one or more polyolefins (for example high or low density
polyethylene (PE) or polypropylene (PP)). Furthermore, the plastic
may include or be formed from polyvinyl chloride (PVC), polystyrene
(PS), polyester and/or polycarbonate (PC), polyethylene
terephthalate (PET), polyethersulfone (PES) and/or polyethylene
naphthalate (PEN). The carrier 12 may include one or more of the
materials mentioned above. The carrier 12 may include or be formed
from a metal or a metal compound, for example copper, silver, gold,
platinum or the like. The carrier 12 including a metal or a metal
compound can also be embodied as a metal film or a metal-coated
film. The carrier 12 can be embodied as translucent or
transparent.
[0050] In various embodiments, a barrier layer (not illustrated)
can optionally be arranged on or above the carrier 12. The barrier
layer may include or consist of one or more of the following
substances: aluminum oxide, zinc oxide, zirconium oxide, titanium
oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon
oxide, silicon nitride, silicon oxynitride, indium tin oxide,
indium zinc oxide, aluminum-doped zinc oxide, and mixtures and
alloys thereof. Furthermore, in various embodiments, the barrier
layer can have a layer thickness in a range of approximately 0.1 nm
(one atomic layer) to approximately 5000 nm, for example a layer
thickness in a range of approximately 10 nm to approximately 200
nm, for example a layer thickness of approximately 40 nm.
[0051] An active region of the optoelectronic component 10 is
arranged on or above the carrier 12 or the barrier layer. The
active region can be understood as that region of the
optoelectronic component 10 in which electric current for the
operation of the optoelectronic component 10 flows and the
electromagnetic radiation is generated or absorbed. The active
region includes a first electrode layer 14, a second electrode
layer 24 and a functional layer structure 22 therebetween.
[0052] The first electrode layer 14 is formed on the carrier 12 if
the barrier layer is not present. The first electrode layer 14 can
be formed from an electrically conductive material, such as, for
example, a metal or a transparent conductive oxide (TCO) or a layer
stack including a plurality of layers of the same metal or
different metals and/or the same TCO or different TCOs. Transparent
conductive oxides are transparent conductive substances, for
example metal oxides, such as, for example, zinc oxide, tin oxide,
cadmium oxide, titanium oxide, indium oxide, or indium tin oxide
(ITO). Alongside binary metal-oxygen compounds, such as, for
example, ZnO, SnO.sub.2, or In.sub.2O.sub.3, ternary metal-oxygen
compounds, such as, for example, AlZnO, Zn.sub.2SnO.sub.4,
CdSnO.sub.3, ZnSnO.sub.3, MgIn.sub.2O.sub.4, GaInO.sub.3,
Zn.sub.2In.sub.2O.sub.5 or In.sub.4Sn.sub.3O.sub.12, or mixtures of
different transparent conductive oxides also belong to the group of
TCOs and can be used in various embodiments. Furthermore, the TCOs
do not necessarily correspond to a stoichiometric composition and
can furthermore be p-doped or n-doped. The first electrode layer 14
may include a metal; for example Ag, Pt, Au, Mg, Al, Ba, In, Ag,
Au, Mg, Ca, Sm or Li, and compounds, combinations or alloys of
these substances. The first electrode layer 14 can be formed by a
layer stack of a combination of a layer of a metal on a layer of a
TCO, or vice versa. One example is a silver layer applied on an
indium tin oxide layer (ITO) (Ag on ITO) or ITO-Ag-ITO
multilayers.
[0053] The first electrode layer 14 may include one or a plurality
of the following materials as an alternative or in addition to the
above mentioned substances: networks composed of metallic nanowires
and nanoparticles, for example composed of Ag; networks composed of
carbon nanotubes; graphene particles and graphene layers; networks
composed of semiconducting nanowires. Furthermore, the first
electrode layer 14 may include electrically conductive polymers or
transition metal oxides or transparent electrically conductive
oxides.
[0054] In various embodiments, the first electrode layer 14 and the
carrier 12 can be formed as translucent or transparent. The first
electrode layer 14 can have for example a layer thickness in a
range of approximately 1 nm to approximately 500 nm, for example a
layer thickness in a range of approximately 10 nm to approximately
250 nm, for example a layer thickness in a range of approximately
100 nm to approximately 150 nm.
[0055] The first electrode layer 14 can be formed as an anode, that
is to say as a hole-injecting electrode, or as a cathode, that is
to say as an electron-injecting electrode.
[0056] Alongside the first electrode layer 14, a first contact feed
18 is formed on the carrier 12, said first contact feed being
electrically coupled to the first electrode layer 14. The first
contact feed 18 can be coupled to a first electrical potential
(provided by an energy source (not illustrated), for example a
current source or a voltage source). Alternatively, the first
electrical potential can be applied to the carrier 12 and then be
applied indirectly to the first electrode layer 14 via said
carrier. The first electrical potential can be for example the
ground potential or some other predefined reference potential.
[0057] The functional layer structure 22, for example an organic
functional layer structure, is formed above the first electrode
layer 14. The functional layer structure 22 may include one or a
plurality of emitter layers, for example including fluorescent
and/or phosphorescent emitters, and one or a plurality of
hole-conducting layers (also designated as hole transport
layer(s)). In various embodiments, one or a plurality of
electron-conducting layers (also designated as electron transport
layer(s)) can alternatively or additionally be provided.
[0058] Examples of emitter materials which can be used in the
optoelectronic component 10 in accordance with various embodiments
for the emitter layer(s) include organic or organometallic
compounds such as derivatives of polyfluorene, polythiophene and
polyphenylene (e.g. 2- or 2,5-substituted poly-p-phenylene
vinylene) and metal complexes, for example iridium complexes such
as blue phosphorescent FIrPic (bis(3,5-difluoro-2-(2-pyridyl)phenyl
(2-carboxypyridyl) iridium III), green phosphorescent Ir(ppy).sub.3
(tris(2-phenylpyridine) iridium III), red phosphorescent Ru
(dtb-bpy).sub.3*2(PF.sub.6) (tris-[4,4'
-di-tert-butyl-(2,2')-bipyridine]ruthenium(III) complex) and blue
fluorescent DPAVBi (4,4-bis[4-(di-p-tolylamino) styryl]biphenyl),
green fluorescent TTPA (9,10-bis[N,N-di(p-tolyl)amino]anthracene)
and red fluorescent DCM2
(4-dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4H-pyran) as
non-polymeric emitters. Such non-polymeric emitters can be
deposited by means of thermal evaporation, for example or can be
applied by means of blade coating. Furthermore, it is possible to
use polymer emitters, which can be deposited, in particular, by
means of a wet-chemical method such as spin coating, for example.
The emitter materials can be embedded in a matrix material in a
suitable manner.
[0059] The emitter materials of the emitter layer(s) can be
selected for example such that the optoelectronic component 10
emits white light. The emitter layer(s) may include a plurality of
emitter materials that emit in different colors (for example blue
and yellow or blue, green and red); alternatively, the emitter
layer(s) can also be constructed from a plurality of partial
layers, such as a blue fluorescent emitter layer or blue
phosphorescent emitter layer, a green phosphorescent emitter layer
and a red phosphorescent emitter layer. By mixing the different
colors, the emission of light having a white color impression can
result. Alternatively, provision can also be made for arranging a
converter material in the beam path of the primary emission
generated by said layers, which converter material at least partly
absorbs the primary radiation and emits a secondary radiation
having a different wavelength, such that a white color impression
results from a (not yet white) primary radiation by virtue of the
combination of primary and secondary radiation.
[0060] The functional layer structure 22 may generally include one
or a plurality of electroluminescent layers. The electroluminescent
layers may include organic polymers, organic oligomers, organic
monomers, organic small, non-polymeric molecules ("small
molecules") or a combination of these substances. By way of
example, the functional layer structure 22 may include one or a
plurality of electroluminescent layers embodied as a hole transport
layer, so as to enable for example in the case of an OLED an
effective hole injection into an electroluminescent layer or an
electroluminescent region. Alternatively, in various embodiments,
the functional layer structure 22 may include one or a plurality of
functional layers embodied as an electron transport layer, so as to
enable for example in an OLED an effective electron injection into
an electroluminescent layer or an electroluminescent region. By way
of example, tertiary amines, carbazole derivatives, conductive
polyaniline or polyethylene dioxythiophene can be used as material
for the hole transport layer. In various embodiments, the
electroluminescent layers can be embodied as an electroluminescent
layer.
[0061] In various embodiments, the hole transport layer can be
applied, for example deposited, on or above the first electrode
layer 14, and the emitter layer can be applied, for example
deposited, on or above the hole transport layer. In various
embodiments, the electron transport layer can be applied, for
example deposited, on or above the emitter layer.
[0062] In various embodiments, the functional layer structure 22
can have a layer thickness in a range of approximately 10 nm to
approximately 3 .mu.m, for example of approximately 100 nm to
approximately 1 .mu.m, for example of approximately 300 nm to
approximately 800 .mu.m. In various embodiments, the functional
layer structure 22 can have for example a stack of layers from
among those mentioned arranged one above another.
[0063] The optoelectronic component 10 may optionally generally
include further functional layers, for example arranged on or above
the one or the plurality of emitter layers or on or above the
electron transport layer(s), which serve to further improve the
functionality and thus the efficiency of the optoelectronic
component 10.
[0064] The second electrode layer 24 is formed above the functional
layer structure 22. Alongside the first electrode layer 14, to be
precise on a side of the first electrode layer 14 facing away from
the first contact feed 18, a second contact feed 16 is formed above
the carrier 12. The second contact feed 16 is electrically coupled
to the second electrode layer 24. The second contact feed 16 serves
for electrically contacting the second electrode layer 24. A second
electrical potential can be applied to the second contact feed 16.
The second electrical potential can have for example a value such
that the difference with respect to the first electrical potential
has a value in a range of approximately 1.5 V to approximately 20
V, for example a value in a range of approximately 2.5 V to
approximately 15 V, for example a value in a range of approximately
3 V to approximately 12 V. The second electrode layer 24 may
include or be formed from the same substances as the first
electrode layer 14. The second electrode layer 24 can have for
example a layer thickness in a range of approximately 1 nm to
approximately 100 nm, for example of approximately 10 nm to
approximately 50 nm, for example of approximately 15 nm to
approximately 30 nm. The second electrode layer 24 can generally be
formed in a manner similar to a configuration of the first
electrode layer 14 or differently than the latter. The second
electrode layer 24 can be formed as an anode, that is to say as a
hole-injecting electrode, or as a cathode, that is to say as an
electron-injecting electrode.
[0065] In various embodiments, the first electrode layer 14 and the
second electrode layer 24 are both formed as translucent or
transparent. Consequently, the optoelectronic component 10 can be
formed as a top and bottom emitter and/or as a transparent
optoelectronic component 10.
[0066] The electrical contact feeds 18, 16 can serve for example as
parts of the anode and cathode, respectively. The electrical
contact feeds 18, 16 can be formed such that they are transparent
or nontransparent. The electrical contact feeds 18, 16 may include
for example partial layers including for example
molybdenum/aluminum/molybdenum, chromium/aluminum/chromium,
silver/magnesium or exclusively aluminum. The second electrode
layer 24 is separated from the first contact feed 18 and the first
electrode layer 14 by a first insulator layer 20 and a second
insulator layer 26. The insulator layers 20, 26 include polyimide,
for example, and are formed optionally.
[0067] The carrier 12 with the first electrode layer 14, the
contact feeds 16, 18 and the insulator layers 20, 26 can also be
designated as a substrate. The functional layer structure 22 is
formed on the substrate.
[0068] An encapsulation layer 28 is formed above the second
electrode layer 24 and partly above the first contact feed 18, the
second contact feed 16 and the second insulator layer 26. The
encapsulation layer 28 thus covers the first contact feed 18 and
the second contact feed 16 and can subsequently be at least partly
exposed for electrically contacting the contact feeds 18, 16. The
encapsulation layer 28 can be formed for example in the form of a
barrier thin-film layer or thin-film encapsulation. In the context
of this application, a "barrier thin-film layer" or a "thin-film
encapsulation" can be understood to mean a layer or a layer
structure which is suitable for forming a barrier against chemical
impurities or atmospheric substances, in particular against water
(moisture) and oxygen. In other words, the encapsulation layer 28
is formed in such a way that, for example, OLED-damaging substances
such as water, oxygen or solvent cannot penetrate through it or at
most very small proportions of said substances can penetrate
through it.
[0069] In accordance with one configuration, the encapsulation
layer 28 can be formed as an individual layer (to put it another
way, as a single layer). In accordance with an alternative
configuration, the encapsulation layer 28 may include a plurality
of partial layers formed one on top of another. In other words, in
accordance with one configuration, the encapsulation layer 28 can
be formed as a layer stack. The encapsulation layer 28 or one or a
plurality of partial layers of the encapsulation layer 28 can be
formed for example by means of a suitable deposition method, e.g.
by means of an atomic layer deposition (ALD) method, e.g. a plasma
enhanced atomic layer deposition (PEALD) method or a plasmaless
atomic layer deposition (PLALD) method, or by means of a chemical
vapor deposition (CVD) method, e.g. a plasma enhanced chemical
vapor deposition (PECVD) method or a plasmaless chemical vapor
deposition (PLCVD) method. In accordance with one configuration, in
the case of an encapsulation layer 28 having a plurality of partial
layers, all the partial layers can be formed by means of an atomic
layer deposition method. A layer sequence including only ALD layers
can also be designated as a "nanolaminate". By using an atomic
layer deposition (ALD) method, it is possible for very thin layers
to be deposited. In particular, layers having layer thicknesses in
the atomic layer range can be deposited.
[0070] In accordance with one configuration, the encapsulation
layer 28 can have a layer thickness of approximately 0.1 nm (one
atomic layer) to approximately 1000 nm, for example a layer
thickness of approximately 10 nm to approximately 100 nm, for
example approximately 40 nm.
[0071] In accordance with one configuration in which the
encapsulation layer 28 includes a plurality of partial layers, all
the partial layers can have the same layer thickness. In accordance
with another configuration, the individual partial layers of the
encapsulation layer 28 can have different layer thicknesses. In
other words, at least one of the partial layers can have a
different layer thickness than one or more other partial layers.
The encapsulation layer 28 or the individual partial layers of the
encapsulation layer 28 can be formed as a translucent or
transparent layer.
[0072] In accordance with one configuration, the encapsulation
layer 28 or one or a plurality of the partial layers of the
encapsulation layer 28 may include or be formed from one of the
following substances: aluminum oxide, zinc oxide, zirconium oxide,
titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide,
silicon oxide, silicon nitride, silicon oxynitride, indium tin
oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures
and alloys thereof. In various embodiments, the encapsulation layer
28 or one or a plurality of the partial layers of the encapsulation
layer 28 may include one or a plurality of high refractive index
substances, to put it another way one or a plurality of substances
having a high refractive index, for example having a refractive
index of at least 2.
[0073] The encapsulation layer 28 can cover the underlying layers
for example in a planar fashion without lateral structuring. In
this application, the lateral direction denotes a direction which
is parallel to the plane which is formed by the surface of the
carrier 12 on which the first electrode layer 14 is formed.
[0074] In various embodiments, above the second electrode layer 24,
an electrically insulating layer (not illustrated) can be applied,
for example SiN, SiO.sub.x, SiNO.sub.X or ATO, for example
AlTiO.sub.x, for example having a layer thickness in a range of
approximately 300 nm to approximately 1.5 .mu.m, for example having
a layer thickness in a range of approximately 500 nm to
approximately 1 .mu.m, in order to protect electrically unstable
substances. Furthermore, in various embodiments, one or a plurality
of antireflection layers can additionally be provided.
[0075] FIG. 2 shows the optoelectronic component 10 in accordance
with FIG. 1 in a second state during the method for producing the
optoelectronic component 10. In this state, a frame structure 30 is
formed on the encapsulation layer 28. The frame structure 30 is
formed in a laterally structured manner on the encapsulation layer
28, only two side elements of the frame structure 30 being shown in
FIG. 2. In plan view, the frame structure 30 can be formed in a
frame-shaped fashion, however, wherein in plan view said frame
structure can form a frame around the functional layer structure
22. As an alternative thereto, the frame structure 30 can be formed
on or applied to the encapsulation layer 28 in a manner closed in a
planar manner, for example.
[0076] The frame structure 30 includes a first metallic material.
The first metallic material may include for example aluminum, zinc,
chromium, copper, molybdenum, silver, gold, nickel, gallium, indium
and/or tin. The frame structure 30 can have for example a thickness
in the range of 10 nm to 100 .mu.m, for example of 15 nm to 50
.mu.m, for example of 20 nm to 25 .mu.m. The frame structure 30 may
include for example a plurality of partial layers formed one above
another. The frame structure 30 can for example firstly be applied
to the encapsulation layer 28 in a manner closed in a planar manner
and can subsequently be structured, for example with the aid of a
masking and removal process, or the frame structure 30 can be
applied in a directly structured manner, for example with the aid
of a printing method. The frame structure 30 can be present for
example in solid or liquid form, for example in viscous form. By
way of example, the frame structure 30 can be formed by a liquid
adhesion alloy or starting alloy.
[0077] FIG. 3 shows further component parts of the optoelectronic
component 10 in a first state during the method for producing the
optoelectronic component 10. In particular, FIG. 3 shows a covering
body 36, on which an adhesion layer 34 is formed. The covering body
36 may for example include glass and/or be formed by a laminating
glass. The adhesion layer 34 includes a second metallic material.
The second metallic material can be the same metallic material as
the first metallic material. As an alternative thereto, however,
the second metallic material can also be a different metallic
material. As an alternative thereto, the covering body 36 can also
be formed as a protective layer or film. The adhesion layer 34 can
be formed in a manner closed in a planar manner on the covering
body 36 or in a structured manner in a lateral direction on the
covering body 36. If the adhesion layer 34 is formed in a
structured manner, then it can for example firstly be applied to
the covering body 36 in a manner closed in a planar manner and can
subsequently be structured, for example with the aid of a masking
and/or removal process, or the adhesion layer 34 can be applied in
a directly structured manner, for example with the aid of a
printing method. The structured adhesion layer 34 can be delimited
by an anti-adhesion layer. As an alternative thereto, the adhesion
layer 34 can be formed by the covering body 36. In other words, the
covering body 36 and the adhesion layer 34 can optionally be formed
integrally.
[0078] FIG. 4 shows the further component parts of the
optoelectronic component 10 from FIG. 3 in a second state during
the method for producing the optoelectronic component 10. In
particular, FIG. 4 shows the covering body 36 with the adhesion
layer 34. A liquid first alloy 32, that is to say in a liquid state
of matter, is applied on the adhesion layer 34. The first alloy 32
is applied to the adhesion layer 34 only in a partial region. The
partial region can correspond for example to the frame formed by
the frame structure 30 shown in FIG. 6, or to a region encompassed
by the frame. The application of the liquid first alloy 32 only in
the partial region can be controlled for example by way of the
amount of the first alloy 32 and/or with the aid of the
anti-adhesion layers (not illustrated) which delimit for example
the second adhesion layer 34 in a frame-shaped fashion in a manner
corresponding to the frame structure 30. Such an anti-adhesion
layer may include for example titanium oxide, gallium oxide,
tungsten oxide, zirconium oxide and/or aluminum oxide.
[0079] The first alloy 32 has a low melting point. By way of
example, the first alloy 32 is in its liquid state of matter at
temperatures in a range of between -20 and 100.degree. C., for
example between 0.degree. and 80.degree. C., for example between
20.degree. and 30.degree. C. By way of example, the first alloy 32
is liquid at room temperature. In other words, the first alloy 32
can be applied to the adhesion layer 34 in the liquid state at room
temperature. The first alloy 32 can be applied for example by means
of printing, dispensing and/or as a solution.
[0080] The molecules of the first alloy 32, where they are in
contact with the molecules and/or atoms of the adhesion layer 34,
enter into compounds, for example chemical compounds, with the
corresponding atoms and/or molecules. A second alloy 33 forms as a
result, the melting point of which is significantly higher than
that of the first alloy 32. In particular, the materials of the
first alloy 32 and of the adhesion layer 34 and the process
parameters such as, for example, the processing temperature and the
air pressure during processing are chosen such that the melting
point of the first alloy 32 is below the process temperature and
the melting point of the second alloy 33 is above the process
temperature. This has the effect that the second alloy 33
solidifies during its formation or shortly thereafter and fixedly
bonds to the adhesion layer 34. The second alloy 33 is applied to
the adhesion layer 34 with a thickness such that only one part of
the first alloy 32 reacts with the material of the adhesion layer
34 and another part of the first alloy at least initially remains
liquid.
[0081] The first alloy 32 may include for example gallium, indium,
tin, copper, molybdenum, silver and/or bismuth. The first alloy 32
may include for example GaInSn, for example between 60% and 70%
gallium, between 20% and 30% indium and between 10% and 20% tin.
The first alloy 32 may include for example 68% gallium, 22% indium
and 10% tin, wherein the first alloy 32 then has its melting point
at approximately -19.5.degree. C. and wherein the first alloy then
wets glass, for example a covering body 36. As an alternative
thereto, the first alloy 32 may include for example 62% gallium,
22% indium and 16% tin, wherein the first alloy 32 then has its
melting point at approximately 10.7.degree. C. and wherein the
first alloy 32 can then be referred to as Field's metal. The exact
melting point can be set depending on the portion of tin in the
first alloy. As an alternative thereto, the first alloy 32 may
include InBiSn, for example 51% indium, 33% bismuth and 16% tin,
wherein the first alloy then has its melting point at approximately
62.degree. C. and wherein the first alloy then wets glass, for
example the covering body, and wherein the first alloy 32 can then
be processed on a hot plate. Correspondingly, the second alloy 33
may include for example GaInSn having a significantly higher tin
concentration or GaInSnAl. The first alloy 32 can be formed with a
thickness of for example 10 nm to 50 .mu.m, for example of 20 nm to
25 .mu.m.
[0082] FIG. 5 shows the component parts of the optoelectronic
component 10 in accordance with FIGS. 1 to 4, wherein the covering
body 36 with the adhesion layer 34 and the first alloy 32 and the
second alloy 33 is applied to the frame structure 30. As an
alternative or in addition to applying the first alloy 32 to the
adhesion layer 34, the first alloy can also be applied to the frame
structure 30. In this context, the anti-adhesion layer can
optionally be formed alongside the frame structure 30, for example
in order to precisely predefine where the first alloy 32 is
intended to be arranged, and where not.
[0083] The first alloy 32 forms the second alloy 33 in a chemical
reaction with the metallic materials of the frame structure 30 and
the second adhesion layer 34, which second alloy solidifies and
thus fixedly couples the covering body 36 to the encapsulation
layer 28. Furthermore, the second alloy 33 seals the region above
the functional layer structure 22 in a lateral direction. The first
alloy 32 and the adhesion layers 30, 34 can be formed in such a way
that the first alloy reacts completely to form the second alloy 33.
However, the first alloy 32 and/or the adhesion layers 30, 34 can
alternatively also be formed such that the first alloy 32 reacts
only partly to form the second alloy 33 and that the first alloy 32
is present in a liquid state in one or a plurality of partial
regions even after the completion of the optoelectronic component
10. By way of example, in the completed optoelectronic component
10, the first alloy 32 above the functional layer structure 22 can
be present in a liquid state. This can contribute to reducing
internal stresses, for example on account of thermal and/or
mechanical loading, and preventing damage to the optoelectronic
component 10. Furthermore, this can contribute to reducing or
preventing damage to the optoelectronic component 10 if particles
penetrate into the layer construction during the method. The liquid
first alloy 32 can then serve as a buffer, for example.
Furthermore, the liquid first alloy 32, in the case of cracks
and/or holes in the encapsulation layer 28, can penetrate into the
corresponding cracks and/or holes and close them.
[0084] FIG. 6 shows an optoelectronic component 10, which can for
example largely correspond to the optoelectronic component 10 shown
in FIG. 5. The optoelectronic component 10 includes a nonreactive
material 40 at least in sections adjoining the frame structure 30.
The nonreactive material 40 in particular does not react chemically
with the first alloy 32. In other words, no second alloy 33 forms
in contact regions in which the first alloy 32 touches the
nonreactive material 40. The nonreactive material 40 can be
arranged alongside the frame structure 30 for example in such a way
that between the sections of the nonreactive material 40 the first
alloy 32 can still react with the metallic material of the frame
structure 30, but the overall reaction is restricted, whereby it is
possible to prevent the entire first alloy 32 from reacting to form
the second alloy 33. As a result, in a targeted manner it is
possible to provide regions in which the first alloy 32 is present
in a liquid state even after the completion of the optoelectronic
component 10.
[0085] The nonreactive material may include for example nickel,
aluminum oxide, titanium oxide, zirconium oxide and/or zinc oxide.
The nonreactive material can be applied for example by means of
dispensing, printing from emulsion and/or solution and/or by means
of sputtering. The nonreactive material 40 can be chosen in such a
way that it merely does not react with the first alloy 32 or that
the first alloy 32 does not even wet the nonreactive material 40.
As an alternative or in addition to the nonreactive material 40, it
is possible to provide regions which are free of any material and
merely have air or vacuum. Such regions can be provided for example
with the aid of the anti-adhesion layers that cannot be wetted by
the first alloy 32. An undesired further reaction of the first
alloy 32 can be restricted and/or prevented with the aid of these
free regions.
[0086] FIG. 7 shows a detail view of the second electrode layer 24,
the encapsulation layer 28 and the first alloy 32. Defects, in
particular a crack 50 and a hole 52, are formed in the
encapsulation layer 28. The crack 50 does not extend as far as the
second electrode layer 24. The hole 52 extends as far as the second
electrode layer 24. As an alternative thereto, the crack 50 can
extend as far as the second electrode layer 24 and/or the hole 52
may not extend as far as the second electrode layer 24. The crack
50 and/or the hole 52 may arise during production, during storage
and/or during operation of the optoelectronic component 10.
[0087] The liquid first alloy 32 flows into the crack 50 and the
hole 52 and thus closes the crack 50 and the hole 52. The second
electrode layer 24 may include a metallic material that can
correspond for example to one of the metallic materials mentioned
above. The metallic material of the second electrode layer 24 can
be chosen in such a way that the first alloy 32, which comes into
direct physical contact with the second electrode layer 24 in the
hole 52, reacts chemically with the metallic material and then
forms an alloy, for example the second alloy 33, which then
solidifies and fixedly and/or tightly closes the hole 52. In this
way, the optoelectronic component 10 is able itself to repair
and/or heal defects that occur.
[0088] FIG. 8 shows a detail view of the second electrode layer 24,
the encapsulation layer 28 and the first alloy 32. An anti-adhesion
layer 54 is formed above the encapsulation layer 28. The
anti-adhesion layer 54 can be formed for example in accordance with
one of the anti-adhesion layers explained above. The encapsulation
layer 28 can have a plurality of cutouts in which the first alloy
32 is arranged. The first alloy 32 does not wet the anti-adhesion
layers 54 and is delimited by the latter. The cutouts can serve as
particle catchers. This makes it possible to employ standard
encapsulation methods such as, for example, cavity encapsulation,
frit encapsulation, or a laminate (adhesive bonding).
[0089] The invention is not restricted to the embodiments
indicated. By way of example, the optoelectronic component 10 may
include fewer or more layers. By way of example, the optoelectronic
component 10 may include a mirror layer, an antireflection layer
and/or a coupling-out layer. Furthermore, the embodiments can be
combined with one another. By way of example, the optoelectronic
component 10 shown in FIG. 6 can be produced with the aid of the
methods shown with reference to FIGS. 1 to 5. Furthermore, the same
alloys and metallic materials can always be used within a single
one of the optoelectronic components 10. As an alternative thereto,
correspondingly different alloys and/or different metallic
materials can be used at different locations within one of the
optoelectronic components 10, wherein, if appropriate, different
melting points of the alloys can advantageously be utilized in this
case.
[0090] While the disclosed embodiments have been particularly shown
and described with reference to specific embodiments, it should be
understood by those skilled in the art that various changes in form
and detail may be made therein without departing from the spirit
and scope of the disclosed embodiments as defined by the appended
claims. The scope of the disclosed embodiments is thus indicated by
the appended claims and all changes which come within the meaning
and range of equivalency of the claims are therefore intended to be
embraced.
* * * * *