U.S. patent application number 14/924118 was filed with the patent office on 2016-12-22 for sense amplifier design for ramp sensing.
This patent application is currently assigned to SANDISK TECHNOLOGIES INC.. The applicant listed for this patent is SANDISK TECHNOLOGIES INC.. Invention is credited to Anirudh Amarnath, Tai-Yuan Tseng.
Application Number | 20160372205 14/924118 |
Document ID | / |
Family ID | 57588369 |
Filed Date | 2016-12-22 |
United States Patent
Application |
20160372205 |
Kind Code |
A1 |
Amarnath; Anirudh ; et
al. |
December 22, 2016 |
SENSE AMPLIFIER DESIGN FOR RAMP SENSING
Abstract
Methods and systems for sensing memory cells using a sense
amplifier that can support both ramp sensing and conventional
sensing are described. With ramp sensing, a word line of a memory
array may be ramped up linearly and a sensing operation may be
performed by the sense amplifier while the word line is
continuously being ramped up. In this case, during the sensing
operation, the sense amplifier may sense a bit line of the memory
array connected to a memory cell while the word line is ramping up
and then transfer the result into a data latch. In contrast, with
conventional sensing, a bit line of the memory array may be first
precharged to a particular voltage level (e.g., a read voltage
level) and then sensed while the word line is held at the
particular voltage level.
Inventors: |
Amarnath; Anirudh; (San
Jose, CA) ; Tseng; Tai-Yuan; (Milpitas, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SANDISK TECHNOLOGIES INC. |
Plano |
TX |
US |
|
|
Assignee: |
SANDISK TECHNOLOGIES INC.
Plano
TX
|
Family ID: |
57588369 |
Appl. No.: |
14/924118 |
Filed: |
October 27, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62180617 |
Jun 17, 2015 |
|
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|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 16/0483 20130101;
G11C 16/32 20130101; G11C 16/26 20130101 |
International
Class: |
G11C 16/26 20060101
G11C016/26; G11C 16/30 20060101 G11C016/30 |
Claims
1. An apparatus, comprising: a sensing circuit configured to
precharge a sensing node of the sensing circuit to a second voltage
if a voltage of a feedback node of the sensing circuit is less than
a second transistor threshold voltage below the second voltage, the
sensing circuit configured to charge up the feedback node in
response to a voltage of the sensing node dropping at least a first
transistor threshold voltage below the second voltage during a
sensing operation; and a feedback circuit configured to set the
feedback node to the second voltage if the voltage of the feedback
node rises to more than a third transistor threshold voltage above
a reference voltage during the sensing operation.
2. The apparatus of claim 1, wherein: the sensing circuit
configured to prevent the sensing node from precharging during one
or more other sensing operations subsequent to the sensing
operation in response to the feedback node being set to the second
voltage; and the reference voltage is ground.
3. The apparatus of claim 1, wherein: the sensing circuit
configured to enable the feedback circuit during the sensing
operation in response to a determination that a word line is
transitioning from a first voltage to a second voltage greater than
the first voltage during the sensing operation.
4. The apparatus of claim 1, wherein: the sensing circuit
configured to enable the feedback circuit during the sensing
operation in response to a determination that a power supply
voltage to the sensing circuit is below a particular voltage
level.
5. The apparatus of claim 1, wherein: the first transistor
threshold voltage corresponds with a first PMOS transistor
threshold voltage; the second transistor threshold voltage
corresponds with a second PMOS transistor threshold voltage; and
the third transistor threshold voltage corresponds with an NMOS
transistor threshold voltage.
6. The apparatus of claim 1, wherein: the sensing circuit
configured to precharge a bit line of a memory array to a first
voltage less than the second voltage and electrically couple the
bit line to the sensing node during the sensing operation.
7. The apparatus of claim 6, wherein: the sensing circuit
configured to enable the feedback circuit during the sensing
operation in response to a determination that a temperature
associated with the memory array is above a temperature
threshold.
8. The apparatus of claim 6, wherein: the memory array comprises a
three-dimensional memory array.
9. The apparatus of claim 6, wherein: the memory array comprises a
non-volatile memory that is monolithically formed in one or more
physical levels of memory cells having active areas disposed above
a silicon substrate.
10. A method, comprising: precharging a sensing node of a sense
amplifier to a second voltage; detecting that the sensing node has
dropped at least a transistor threshold voltage below the second
voltage during a sensing operation; and disabling the sensing node
from precharging during one or more other sensing operations
subsequent to the sensing operation in response to detecting that
the sensing node has dropped at least the first transistor
threshold voltage below the second voltage, the disabling the
sensing node includes setting a feedback node of the sense
amplifier to the second voltage using a feedback circuit that pulls
up the feedback node to the second voltage if the feedback circuit
detects that the feedback node has risen more than a second
transistor threshold voltage above a reference voltage.
11. The method of claim 10, further comprising: detecting that a
word line is ramping up during the sensing operation; and enabling
the feedback circuit during the sensing operation in response to
detecting that the word line is ramping up during the sensing
operation.
12. The method of claim 10, further comprising: determining that
even/odd sensing is to be performed during the sensing operation;
and enabling the feedback circuit during the sensing operation in
response to determining that even/odd sensing is to be performed
during the sensing operation.
13. The method of claim 10, further comprising: detecting that a
power supply voltage to the sense amplifier is below a particular
voltage level; and enabling the feedback circuit during the sensing
operation in response to detecting that the power supply voltage to
the sense amplifier is below the particular voltage level.
14. The method of claim 10, wherein: the first transistor threshold
voltage corresponds with a PMOS transistor threshold voltage; and
the second transistor threshold voltage corresponds with an NMOS
transistor threshold voltage.
15. The method of claim 10, further comprising: precharging a bit
line of a memory array to a first voltage less than the second
voltage using the sense amplifier; and electrically coupling the
bit line to the sensing node during the sensing operation.
16. The method of claim 15, further comprising: detecting that a
temperature associated with the memory array is above a temperature
threshold; and enabling the feedback circuit during the sensing
operation in response to detecting that the temperature associated
with the memory array is above the temperature threshold.
17. The method of claim 15, wherein: the memory array comprises a
three-dimensional memory array; and the reference voltage is
ground.
18. The method of claim 15, wherein: the memory array comprises a
non-volatile memory that is monolithically formed in one or more
physical levels of memory cells having active areas disposed above
a silicon substrate.
19. A system, comprising: a sense amplifier including a precharge
path and a sensing path, the sense amplifier configured to
precharge a sensing node of the sense amplifier to a second voltage
using the precharge path and detect that a voltage of the sensing
node has dropped at least a PMOS transistor threshold voltage below
the second voltage using the sensing path during a sensing
operation, the sense amplifier configured to charge up a feedback
node of the sense amplifier in response to the voltage of the
sensing node dropping at least the PMOS transistor threshold
voltage below the second voltage during the sensing operation; and
a feedback circuit configured to disable the sensing node from
precharging during one or more other sensing operations subsequent
to the sensing operation in response to the feedback node rising to
more than an NMOS transistor threshold voltage above a reference
voltage during the sensing operation.
20. The system of claim 19, wherein: the sense amplifier configured
to enable the feedback circuit during the sensing operation in
response to a determination that a word line is ramping up during
the sensing operation; and the reference voltage is ground.
Description
CLAIM OF PRIORITY
[0001] The present application claims priority to U.S. Provisional
Application No. 62/180,617, entitled "Sense Amplifier Design for
Ramp Sensing," filed Jun. 17, 2015, which is herein incorporated by
reference in its entirety.
BACKGROUND
[0002] Semiconductor memory is widely used in various electronic
devices such as cellular telephones, digital cameras, personal
digital assistants, medical electronics, mobile computing devices,
and non-mobile computing devices. Semiconductor memory may comprise
non-volatile memory or volatile memory. A non-volatile memory
allows information to be stored and retained even when the
non-volatile memory is not connected to a source of power (e.g., a
battery). Examples of non-volatile memory include flash memory
(e.g., NAND-type and NOR-type flash memory) and Electrically
Erasable Programmable Read-Only Memory (EEPROM).
[0003] Both flash memory and EEPROM utilize floating-gate
transistors. For each floating-gate transistor, a floating gate is
positioned above and insulated from a channel region of the
floating-gate transistor. The channel region is positioned between
source and drain regions of the floating-gate transistor. A control
gate is positioned above and insulated from the floating gate. The
threshold voltage of the floating-gate transistor may be controlled
by setting the amount of charge stored on the floating gate. The
amount of charge on the floating gate is typically controlled using
Fowler-Nordheim (F-N) tunneling or hot-electron injection. The
ability to adjust the threshold voltage allows a floating-gate
transistor to act as a non-volatile storage element or memory cell.
In some cases, more than one data bit per memory cell (i.e., a
multi-level or multi-state memory cell) may be provided by
programming and reading multiple threshold voltages or threshold
voltage ranges.
[0004] NAND flash memory structures typically arrange multiple
floating-gate transistors in series with and between two select
gates. The floating-gate transistors in series and the select gates
may be referred to as a NAND string. In recent years, NAND flash
memory has been scaled in order to reduce cost per bit. However, as
process geometries shrink, many design and process challenges are
presented. These challenges include increased variability in
transistor characteristics over process, voltage, and temperature
variations.
BRIEF DESCRIPTION OF THE DRAWINGS
[0005] FIG. 1 depicts one embodiment of a NAND string.
[0006] FIG. 2 depicts one embodiment of the NAND string of FIG. 1
using a corresponding circuit diagram.
[0007] FIG. 3A depicts one embodiment of a memory block including a
plurality of NAND strings.
[0008] FIG. 3B depicts one embodiment of possible threshold voltage
distributions for a three-bit-per-cell memory cell.
[0009] FIG. 4A depicts one embodiment of a vertical NAND
structure.
[0010] FIG. 4B depicts one embodiment of a cross-sectional view
taken along line X-X of FIG. 4A.
[0011] FIG. 5A depicts one embodiment of a non-volatile storage
system.
[0012] FIG. 5B depicts one embodiment of a sense block.
[0013] FIG. 6A depicts one embodiment of a portion of a sense
amplifier.
[0014] FIG. 6B depicts one embodiment of voltage waveforms
corresponding with operation of the portion of the sense amplifier
depicted in FIG. 6A.
[0015] FIG. 7A is a flowchart describing one embodiment of a
process for sensing memory cells using a sense amplifier.
[0016] FIG. 7B is a flowchart describing another embodiment of a
process for sensing memory cells using a sense amplifier.
DETAILED DESCRIPTION
[0017] Technology is described for sensing memory cells using a
sense amplifier that can support both ramp sensing and conventional
sensing. With ramp sensing, a word line of a memory array may be
ramped up linearly and a sensing operation may be performed by the
sense amplifier while the word line is continuously being ramped
up. In this case, during the sensing operation, the sense amplifier
may sense a bit line of the memory array connected to a memory cell
while the word line is ramping up and then transfer the result
(e.g., based on the SEN level of the sense amplifier) into a data
latch. In contrast, with conventional sensing, a bit line of the
memory array may be first precharged to a particular voltage level
(e.g., a read voltage level) and then sensed while the word line is
held at the particular voltage level. In this case, the word line
may first settle at the particular voltage level prior to the
sensing operation and then the sense amplifier may perform the
sensing operation while the word line remains at the particular
voltage level.
[0018] In one embodiment, while a word line of a memory array is
ramping up (e.g., ramping up from 200 mV to 5.5V at 100 mV per
microsecond), a sense amplifier may perform one or more sensing
operations. During a sensing operation of the one or more sensing
operations, the sense amplifier may precharge a bit line
electrically coupled to the sense amplifier to a first voltage
(e.g., 2V) and precharge a sensing node (SEN) of the sense
amplifier to a second voltage greater than the first voltage (e.g.,
4V). The precharge path for precharging the sensing node may be
different from the sensing path for determining if the sensing node
has dropped below the second voltage by a particular amount due to
current flowing from the sensing node to the bit line during the
sensing operation. In some cases, if the sensing node drops to a
transistor threshold voltage (e.g., a PMOS transistor threshold
voltage) below the second voltage, then the sensing path may detect
that the sensing node has dropped below the second voltage by at
least the transistor threshold voltage and latch the result causing
the precharge path to be disabled during subsequent sensing
operations of the one or more sensing operations. The precharge
path may be disabled via a feedback node (LBUS) connected to a
feedback circuit that pulls up the feedback node to disable the
precharge path if the feedback circuit detects that the feedback
node has risen more than a transistor threshold voltage (e.g., an
NMOS transistor threshold voltage) above ground. The active pull up
on the feedback node due to the feedback circuit allows for faster
sensing of the sensing node, faster disabling of the precharge
path, and less memory cell state data dependence on the precharge
time of the sensing node via the precharge path during subsequent
sensing operations.
[0019] In some cases, the sense amplifier may be used during
even/odd sensing (e.g., only even bit lines or only odd bit lines
are sensed during a sensing operation) or all-bit-line (ABL)
sensing (e.g., both even bit lines and odd bit lines are sensed
during a sensing operation). The sense amplifier may be used during
either ramp sensing and conventional sensing and the active pull up
on the feedback node (LBUS) for reducing data dependence on the
precharge time of the sensing node via the precharge path may be
selectively enabled such that the active pull up is enabled only
during ramp sensing.
[0020] The methods and systems described herein may be used for
sensing memory cells within a non-volatile storage system. In one
embodiment, a non-volatile storage system may include one or more
two-dimensional arrays of non-volatile memory cells. The memory
cells within a two-dimensional memory array may form a single layer
of memory cells and may be selected via control lines (e.g., word
lines and bit lines) in the X and Y directions. In another
embodiment, a non-volatile storage system may include one or more
monolithic three-dimensional memory arrays in which two or more
layers of memory cells may be formed above a single substrate
without any intervening substrates. In some cases, a
three-dimensional memory array may include one or more vertical
columns of memory cells located above and orthogonal to a substrate
or substantially orthogonal to the substrate (e.g., within 2-5
degrees of a normal vector that is orthogonal to the substrate). In
one example, a non-volatile storage system may include a memory
array with vertical bit lines or bit lines that are arranged
orthogonal to a semiconductor substrate. The substrate may comprise
a silicon substrate. The memory array may comprise various memory
structures including planar NAND structures, vertical NAND
structures, Bit Cost Scalable (BiCS) NAND structures, 3D NAND
structures, or 3D ReRAM structures.
[0021] In one embodiment, the memory cells within a memory array
may comprise re-writable non-volatile memory cells including a
reversible resistance-switching element. A reversible
resistance-switching element may include a reversible
resistivity-switching material having a resistivity that may be
reversibly switched between two or more states. In one embodiment,
the reversible resistance-switching material may include a metal
oxide (e.g., a binary metal oxide). The metal oxide may include
nickel oxide or hafnium oxide. In another embodiment, the
reversible resistance-switching material may include a phase change
material. The phase change material may include a chalcogenide
material. In some cases, the re-writeable non-volatile memory cells
may comprise resistive RAM (ReRAM) memory cells. In other cases,
the re-writeable non-volatile memory cells may comprise conductive
bridge memory cells or programmable metallization memory cells.
[0022] In some embodiments, a non-volatile storage system may
include a non-volatile memory that is monolithically formed in one
or more physical levels of arrays of memory cells having an active
area disposed above a silicon substrate. The non-volatile storage
system may also include circuitry associated with the operation of
the memory cells (e.g., decoders, state machines, page registers,
or control circuitry for controlling the reading or programming of
the memory cells). The circuitry associated with the operation of
the memory cells may be located above the substrate or located
within the substrate.
[0023] In some embodiments, a non-volatile storage system may
include a monolithic three-dimensional memory array. The monolithic
three-dimensional memory array may include one or more levels of
memory cells. Each memory cell within a first level of the one or
more levels of memory cells may include an active area that is
located above a substrate (e.g., above a single-crystal substrate
or a crystalline silicon substrate). In one example, the active
area may include a semiconductor junction (e.g., a P-N junction).
The active area may include a portion of a source or drain region
of a transistor. In another example, the active area may include a
channel region of a transistor.
[0024] FIG. 1 depicts one embodiment of a NAND string 90. FIG. 2
depicts one embodiment of the NAND string of FIG. 1 using a
corresponding circuit diagram. As depicted, NAND string 90 includes
four transistors, 100, 102, 104, and 106, in series between a first
select gate 120 (i.e., a drain-side select gate) and a second
select gate 122 (i.e., a source-side select gate). Select gate 120
connects the NAND string 90 to a bit line 126. Select gate 122
connects the NAND string 90 to a source line 128. Select gate 120
is controlled by applying the appropriate voltage to control gate
120CG (i.e., via select line SGD of FIG. 2). Select gate 122 is
controlled by applying the appropriate voltage to control gate
122CG (i.e., via select line SGS of FIG. 2). Each of the
transistors 100, 102, 104, and 106 includes a control gate and a
floating gate. For example, transistor 100 includes control gate
100CG and floating gate 100FG, transistor 102 includes control gate
102CG and floating gate 102FG, transistor 104 includes control gate
104CG and floating gate 104FG, and transistor 106 includes control
gate 106CG and floating gate 106FG. Control gates 100CG, 102CG,
104CG, and 106CG are connected to word lines WL3, WL2, WL1, and
WL0, respectively.
[0025] Note that although FIGS. 1 and 2 show four floating-gate
transistors in the NAND string, the use of four floating-gate
transistors is only provided as an example. A NAND string may have
less than or more than four floating-gate transistors (or memory
cells). For example, some NAND strings may include 16 memory cells,
32 memory cells, 64 memory cells, 128 memory cells, etc. The
discussion herein is not limited to any particular number of memory
cells in a NAND string. One embodiment uses NAND strings with 66
memory cells, where 64 memory cells are used to store data and two
of the memory cells are referred to as dummy memory cells because
they do not store data.
[0026] A typical architecture for a flash memory system using a
NAND flash memory structure includes a plurality of NAND strings
within a memory block. A memory block may comprise a unit of erase.
In some cases, the NAND strings within a memory block may share a
common well (e.g., a P-well). Each NAND string may be connected to
a common source line by its source-side select gate (e.g.,
controlled by select line SGS) and connected to its associated bit
line by its drain-side select gate (e.g., controlled by select line
SGD). Typically, each bit line runs on top of (or over) its
associated NAND string in a direction perpendicular to the word
lines and is connected to a sense amplifier.
[0027] In some embodiments, during a programming operation, storage
elements that are not to be programmed (e.g., storage elements that
have previously completed programming to a target data state) may
be inhibited or locked out from programming by boosting associated
channel regions (e.g., self-boosting the channel regions via word
line coupling). An unselected storage element (or unselected NAND
string) may be referred to as an inhibited or locked out storage
element (or inhibited NAND string) as it is inhibited or locked out
from programming during a given programming iteration of a
programming operation.
[0028] Although technology using NAND-type flash memory may be
described herein, the technology disclosed herein may also be
applied to other types of non-volatile storage devices and
architectures (e.g., NOR-type flash memory). Moreover, although
technology using floating-gate transistors is described herein, the
technology described herein may also be applied to or used with
other memory technologies including those that employ charge
trapping, phase-change (e.g., chalcogenide materials), or
state-change materials.
[0029] FIG. 3A depicts one embodiment of a memory block including a
plurality of NAND strings. As depicted, each NAND string includes
(Y+1) memory cells. Each NAND string is connected to one bit line
out of (X+1) bit lines on the drain side (i.e., one bit line of bit
lines BL0-BLX) via a drain-side select gate controlled by the
drain-side selection signal SGD. Each NAND string is connected to a
source line (source) via a source-side select gate controlled by
source-side selection signal SGS. In one embodiment, the
source-side select gate controlled by source-side selection signal
SGS and the drain-side select gate controlled by the drain-side
selection signal SGD may comprise transistors without floating
gates or transistors that include a floating gate structure.
[0030] In one embodiment, during a programming operation, when
programming a memory cell, such as a NAND flash memory cell, a
program voltage may be applied to the control gate of the memory
cell and the corresponding bit line may be grounded. These
programming bias conditions may cause electrons to be injected into
the floating gate via field-assisted electron tunneling, thereby
raising the threshold voltage of the memory cell. The program
voltage applied to the control gate during a program operation may
be applied as a series of pulses. In some cases, the magnitude of
the programming pulses may be increased with each successive pulse
by a predetermined step size. Between programming pulses, one or
more verify operations may be performed. During the programming
operation, memory cells that have reached their intended
programming states may be locked out and inhibited from programming
by boosting the channel regions of the program inhibited memory
cells.
[0031] In one embodiment, memory cells may be erased by raising the
p-well to an erase voltage (e.g., 20 volts) for a sufficient period
of time and grounding the word lines of a selected block of memory
cells while the source and bit lines are floating. These erase bias
conditions may cause electrons to be transferred from the floating
gate through the tunneling oxide, thereby lowering the threshold
voltage of the memory cells within the selected block. In some
cases, an erase operation may be performed on an entire memory
plane, on individual blocks within a memory plane, or another unit
of memory cells.
[0032] In some embodiments, during verify operations and/or read
operations, a selected word line may be connected (or biased) to a
voltage, a level of which is specified for each read and verify
operation in order to determine whether a threshold voltage of a
particular memory cell has reached such level. After applying the
word line voltage, the conduction current of the memory cell may be
measured (or sensed) to determine whether the memory cell conducted
a sufficient amount of current in response to the voltage applied
to the word line. If the conduction current is measured to be
greater than a certain value, then it is assumed that the memory
cell turned on and the voltage applied to the word line is greater
than the threshold voltage of the memory cell. If the conduction
current is not measured to be greater than the certain value, then
it is assumed that the memory cell did not turn on and the voltage
applied to the word line is not greater than the threshold voltage
of the memory cell.
[0033] There are many ways to measure the conduction current of a
memory cell during a read or verify operation. In one example, the
conduction current of a memory cell may be measured by the rate it
discharges or charges a dedicated capacitor in a sense amplifier.
In another example, the conduction current of the selected memory
cell allows (or fails to allow) the NAND string that included the
memory cell to discharge a voltage on the corresponding bit line.
The voltage of the bit line (or the voltage across a dedicated
capacitor in a sense amplifier) may be measured after a period of
time to determine whether the bit line has been discharged by a
particular amount or not.
[0034] FIG. 3B depicts one embodiment of possible threshold voltage
distributions (or data states) for a three-bit-per-cell memory cell
(i.e., the memory cell may store three bits of data). Other
embodiments, however, may use more than or less than three bits of
data per memory cell (e.g., such as four or more bits of data per
memory cell). At the end of a successful programming process (with
verification), the threshold voltages of memory cells within a
memory page or memory block should be within one or more threshold
voltage distributions for programmed memory cells or within a
distribution of threshold voltages for erased memory cells, as
appropriate.
[0035] As depicted, each memory cell may store three bits of data;
therefore, there are eight valid data states S0-S7. In one
embodiment, data state S0 is below 0 volts and data states S1-S7
are above 0 volts. In other embodiments, all eight data states are
above 0 volts, or other arrangements can be implemented. In one
embodiment, the threshold voltage distribution S0 is wider than
distributions S1-S7.
[0036] Each data state S0-S7 corresponds to a unique value for the
three bits stored in the memory cell. In one embodiment, S0=111,
S1=110, S2=101, S3=100, S4=011, S5=010, S6=001 and S7=000. Other
mappings of data to states S0-S7 can also be used. In one
embodiment, all of the bits of data stored in a memory cell are
stored in the same logical page. In other embodiments, each bit of
data stored in a memory cell corresponds to different pages. Thus,
a memory cell storing three bits of data would include data in a
first page, a second page, and a third page. In some embodiments,
all of the memory cells connected to the same word line would store
data in the same three pages of data. In some embodiments, the
memory cells connected to a word line can be grouped into different
sets of pages (e.g., by odd and even bit lines).
[0037] In some example implementations, the memory cells will be
erased to state S0. From state S0, the memory cells can be
programmed to any of states S1-S7. Programming may be performed by
applying a set of pulses with rising magnitudes to the control
gates of the memory cells. Between pulses, a set of verify
operations may be performed to determine whether the memory cells
being programmed have reached their target threshold voltage (e.g.,
using verify levels Vv1, Vv2, Vv3, Vv4, Vv5, Vv6, and Vv7). Memory
cells being programmed to state S1 will be tested to see if their
threshold voltage has reached Vv1. Memory cells being programmed to
state S2 will be tested to see if their threshold voltage has
reached Vv2. Memory cells being programmed to state S3 will be
tested to see if their threshold voltage has reached Vv3. Memory
cells being programmed to state S4 will be tested to see if their
threshold voltage has reached Vv4. Memory cells being programmed to
state S5 will be tested to see if their threshold voltage has
reached Vv5. Memory cells being programmed to state S6 will be
tested to see if their threshold voltage has reached Vv6. Memory
cells being programmed to state S7 will be tested to see if their
threshold voltage has reached Vv7.
[0038] When reading memory cells that store three bits of data,
multiple reads will be performed at read compare points Vr1, Vr2,
Vr3, Vr4, Vr5, Vr6, and Vr7 to determine which state the memory
cells are in. If a memory cell turns on in response to Vr1, then it
is in state S0. If a memory cell turns on in response to Vr2 but
does not turn on in response to Vr1, then it is in state S1. If a
memory cell turns on in response to Vr3 but does not turn on in
response to Vr2, then it is in state S2. If a memory cell turns on
in response to Vr4 but does not turn on in response to Vr3, then it
is in state S3. If a memory cell turns on in response to Vr5 but
does not turn on in response to Vr4, then it is in state S4. If a
memory cell turns on in response to Vr6 but does not turn on in
response to Vr5, then it is in state S5. If a memory cell turns on
in response to Vr7 but does not turn on in response to Vr6, then it
is in state S6. If a memory cell does not turn on in response to
Vr7, then it is in state S7.
[0039] In some cases, a vertical NAND structure may comprise a
vertical NAND string or a vertical inverted NAND string. A NAND
string may comprise a string of floating gate transistors. An
inverted NAND string may comprise a string of inverted floating
gate transistors.
[0040] FIG. 4A depicts one embodiment of a vertical NAND structure.
The vertical NAND structure includes an inverted NAND string formed
above the substrate 424 and oriented such that the inverted NAND
string is orthogonal to the substrate 424. An inverted NAND string
may comprise a NAND string that includes an inverted floating gate
transistor with a tunneling oxide between a floating gate of the
inverted floating gate transistor and a control gate of the
inverted floating gate transistor. The arrangement of the tunneling
oxide between the floating gate and the control gate allows the
mechanism (e.g., F-N tunneling as the transport mechanism) for
programing and/or erase of the inverted floating gate transistor to
occur between the floating gate and the control gate rather than
between the floating gate and the channel of the inverted floating
gate transistor. The inverted NAND string may be arranged within a
vertical memory hole that is etched through alternating layers of
control gate material (e.g., tungsten, nitride, or polysilicon) and
inter-gate insulator material (e.g., oxide or silicon dioxide). As
depicted, the layers of control gate material include layer 417 and
layers 414-416 and the layers of inter-gate insulator material
include layers 418-420. The inter-gate insulator material layer 420
may be arranged above a source line layer 422 (e.g., doped
polysilicon) that may be arranged above a substrate 424 (e.g., a
silicon substrate). In some cases, a first word line (WL1) may
correspond with control gate layer 414, a second word line (WL0)
may correspond with control gate layer 415, and a source-side
select gate line (SGS) may correspond with control gate layer
416.
[0041] In one embodiment, within the memory hole a tunneling layer
material 408 (e.g., including a thin oxide), a floating gate
material 410 (e.g., polysilicon), a dielectric layer 412 (e.g.,
oxide), and a channel layer material 406 (e.g., undoped
polysilicon) may be deposited within the memory hole and arranged
in order to form the inverted NAND string. As depicted in FIG. 4A,
the tunneling layer material 408 is arranged within or inside of
the memory hole. The tunneling layer material 408 may comprise a
portion of a multi-layer dielectric stack such as an ONO dielectric
stack, which includes alternating layers of silicon dioxide ("0")
and silicon nitride ("N"). In some cases, the tunneling layer
material 408 may comprise a high-K dielectric material (e.g.,
hafnium-based high-K dielectrics or hafnium oxide) that has a
dielectric constant that is greater than that of silicon dioxide.
In some cases, a core material layer 404 (e.g., oxide) may be
formed within the memory hole. In other cases, the core material
layer 404 may be omitted. A bit line contact layer 402 may be
formed at the top of the memory hole and connect to or directly
abut the channel layer material 406. The channel layer material 406
may connect to the source line layer 422 at the bottom of the
memory hole. Thus, in this case, the bit line contact layer 402
connects to the inverted NAND string at the top of the memory hole
and the source line contact layer 422 connects to the inverted NAND
string at the bottom of the memory hole.
[0042] In one embodiment, the bit line contact layer 402 may
comprise a material of a first conductivity type (e.g., n-type) and
the source line contact layer 422 may comprise a material of a
second conductivity type different from the first conductivity type
(e.g., p-type). In one example, the bit line contact layer 402 may
comprise an n-type material (e.g., n-type polysilicon) and the
source line contact layer 422 may comprise a p-type material (e.g.,
p-type polysilicon). In another example, the bit line contact layer
402 may comprise a p-type material and the source line contact
layer 422 may comprise an n-type material (e.g., n-type
polysilicon). Thus, in some cases, the inverted NAND string may
include an asymmetric source and drain that may be used to provide
both an electron supply (via the n-type material) and a hole supply
(via the p-type material) for memory operations (e.g., program,
erase, and read operations) performed using the inverted NAND
string. The memory operations may comprise n-channel operations
and/or p-channel operations depending on the bias conditions
applied to the inverted NAND string.
[0043] In one embodiment, an inverted NAND string may be formed
using a core material layer (e.g., an oxide layer or other
dielectric layer) that is arranged adjacent to a channel layer
(e.g., an undoped polysilicon channel layer) that is arranged
adjacent to a blocking layer (e.g., an oxide layer or other
dielectric layer) that is arranged adjacent to a floating gate
layer (or a charge trap layer) that is arranged adjacent to a
tunneling layer (e.g., a thin oxide) that is arranged adjacent to a
control gate layer (e.g., tungsten). The tunneling layer may have a
thickness that is less than the thickness of the blocking
layer.
[0044] FIG. 4B depicts one embodiment of a cross-sectional view
taken along line X-X of FIG. 4A. As depicted, the inverted NAND
string includes an inner core material layer 404 that is surrounded
by the channel layer material 406 that is surrounded by the
dielectric layer 412 that is surrounded by the floating gate
material 410 that is surrounded by the tunneling layer material 408
that is surrounded by the control gate material layer 417. In one
embodiment, FIG. 4A may depict a cross-sectional view taken along
line Y-Y of FIG. 4B. In one embodiment, the inverted NAND string
may be formed using a vertical cylindrical structure or a vertical
tapered cylindrical structure. In this case, the dielectric
material 412, floating gate material 410, tunneling layer material
408, and channel layer material 406 of the inverted NAND string may
comprise vertical annular structures surrounding the core material
layer 404. In another embodiment, the inverted NAND string may be
formed using a vertical pillar structure or a vertical rectangular
prism structure.
[0045] In some embodiments, a vertical NAND structure may include a
vertical NAND string formed above a substrate and oriented such
that the vertical NAND string is orthogonal to the substrate. The
vertical NAND string may be arranged within a vertical memory hole
that is etched through alternating layers of control gate material
(e.g., tungsten or polysilicon) and inter-gate insulator material
(e.g., oxide or silicon oxide).
[0046] FIG. 5A depicts one embodiment of a non-volatile storage
system 596 including read/write circuits for reading and
programming a page (or other unit) of memory cells (e.g., NAND
multi-level cells) in parallel. As depicted, non-volatile storage
system 596 includes a memory die 598 and controller 550. Memory die
598 includes a memory array 501 (e.g., a NAND flash memory array),
control circuitry 510, row decoder 530, column decoder 560, and
read/write circuits 565. In one embodiment, access to the memory
array 501 by the various peripheral circuits (e.g., row decoders or
column decoders) is implemented in a symmetric fashion, on opposite
sides of the array, so that the densities of access lines and
circuitry on each side are reduced by half. The memory array 501 is
addressable by word lines via a row decoder 530 and by bit lines
via a column decoder 560. Word lines and bit lines are examples of
memory array control lines. The read/write circuits 565 include
multiple sense blocks 500 that allow a page of storage elements to
be read or programmed in parallel. In some cases, controller 550
may be integrated on the memory die 598. Commands and data are
transferred between the host and controller 550 via lines 520 and
between the controller 550 and the memory die 598 via lines
518.
[0047] The control circuitry 510 cooperates with the read/write
circuits 565 to perform memory operations on the memory array 501.
The control circuitry 510 includes a state machine 512, an on-chip
address decoder 514, and a power control module 516. The state
machine 512 provides chip-level control of memory operations. The
on-chip address decoder 514 provides an address interface between
the addresses used by the host and the hardware addresses used by
the decoders 530 and 560. The power control module 516 controls the
power and voltages supplied to the word lines and bit lines during
memory operations. In one embodiment, a power control module 516
includes one or more charge pumps that may generate voltages
greater than the supply voltage.
[0048] In some embodiments, one or more of the components (alone or
in combination), other than memory array 501, may be referred to as
a managing or control circuit. For example, one or more managing or
control circuits may include any one of or a combination of control
circuitry 510, state machine 512, decoders 530/560, power control
516, sense blocks 500, read/write circuits 565, and/or controller
550. The one or more managing circuits or the one or more control
circuits may perform or facilitate one or more memory array
operations including erasing, programming, or reading
operations.
[0049] In some embodiments, one or more managing or control
circuits may be used for controlling the operation of a memory
array, such as memory array 501. The one or more managing or
control circuits may provide control signals to the memory array in
order to perform a read operation and/or a write operation on the
memory array. In one example, the one or more managing or control
circuits may include any one of or a combination of control
circuitry, state machine, decoders, sense amplifiers, read/write
circuits, and/or controllers. The one or more control circuits may
enable or facilitate one or more memory array operations including
erasing, programming, or reading operations to be performed on the
memory array. In one example, the one or more control circuits may
comprise an on-chip memory controller for determining row and
column addresses, word line and bit line addresses, memory array
enable signals, and/or data latching signals.
[0050] In one embodiment, memory array 501 may be divided into a
large number of blocks (e.g., blocks 0-1023, or another amount) of
memory cells. As is common for flash memory systems, the block may
be the unit of erase. That is, each block may contain the minimum
number of memory cells that are erased together. Other units of
erase can also be used. A block contains a set of NAND strings
which are accessed via bit lines and word lines. Typically, all of
the NAND strings in a block share a common set of word lines.
[0051] Each block may be divided into a particular number of pages.
In one embodiment, a page may be the unit of programming. Other
units of programming can also be used. One or more pages of data
are typically stored in one row of memory cells. For example, one
or more pages of data may be stored in memory cells connected to a
common word line. In one embodiment, the set of memory cells that
are connected to a common word line are programmed simultaneously.
A page can store one or more sectors. A sector may include user
data and overhead data (also called system data). Overhead data
typically includes header information and Error Correction Codes
(ECC) that have been calculated from the user data of the sector.
The controller (or other component) calculates the ECC when data is
being programmed into the array, and also checks it when data is
being read from the array. Alternatively, the ECC and/or other
overhead data may be stored in different pages, or even different
blocks, than the user data to which they pertain. A sector of user
data is typically 512 bytes, corresponding to the size of a sector
in magnetic disk drives. A large number of pages form a block,
anywhere from 8 pages, for example, up to 32, 64, 128 or more
pages. Different sized blocks, pages, and sectors can also be
used.
[0052] FIG. 5B depicts one embodiment of a sense block 500, such as
sense block 500 in FIG. 5A. An individual sense block 500 may be
partitioned into a core portion, referred to as a sense module 580,
and a common portion 590. In one embodiment, there is a separate
sense module 580 for each bit line and one common portion 590 for a
set of multiple sense modules 580. In one example, a sense block
may include one common portion 590 and eight sense modules 580.
Each of the sense modules in a group may communicate with the
associated common portion via a data bus 572.
[0053] Sense module 580 comprises sense circuitry 570 that
determines whether a conduction current in a connected bit line is
above or below a predetermined threshold level. Sense module 580
also includes a bit line latch 582 that is used to set a voltage
condition on the connected bit line. For example, a predetermined
state latched in bit line latch 582 may result in the connected bit
line being pulled to a state designating program inhibit voltage
(e.g., 1.5-3 V).
[0054] Common portion 590 comprises a processor 592, a set of data
latches 594, and an I/O Interface 596 coupled between the set of
data latches 594 and data bus 520. Processor 592 performs
computations. For example, processor 592 may determine the data
stored in the sensed storage element and store the determined data
in the set of data latches. The set of data latches 594 may be used
to store data bits determined by processor 592 during a read
operation or to store data bits imported from the data bus 520
during a program operation. The imported data bits represent write
data meant to be programmed into a memory array, such as memory
array 501 in FIG. 5A. I/O interface 596 provides an interface
between data latches 594 and the data bus 520.
[0055] During a read operation or other storage element sensing
operation, a state machine, such as state machine 512 in FIG. 5A,
controls the supply of different control gate voltages to the
addressed storage elements. In some cases, as it steps through the
various predefined control gate voltages corresponding to the
various memory states supported by the memory, the sense module 580
may trip at one of these voltages and an output will be provided
from sense module 580 to processor 592 via bus 572. At that point,
processor 592 determines the resultant memory state by
consideration of the tripping event(s) of the sense module and the
information about the applied control gate voltage from the state
machine via input lines 593. It then computes a binary encoding for
the memory state and stores the resultant data bits into data
latches 594. In another embodiment of the core portion, bit line
latch 582 serves both as a latch for latching the output of the
sense module 580 and as a bit line latch as described above.
[0056] During a programming operation, the data to be programmed is
stored in the set of data latches 594. The programming operation,
under the control of the state machine 512, comprises a series of
programming voltage pulses applied to the control gates of the
addressed storage elements. Each program pulse is followed by a
read back (or verify process) to determine if the storage element
has been programmed to the desired memory state. Processor 592
monitors the read back memory state relative to the desired memory
state. When the two are in agreement, the processor 592 sets the
bit line latch 582 so as to cause the bit line to be pulled to a
state designating program inhibit voltage. This inhibits the
storage element coupled to the bit line from further programming
even if program pulses appear on its control gate. In other
embodiments, the processor initially loads the bit line latch 582
and the sense circuitry sets it to an inhibit value during the
verify process.
[0057] Data latch stack 594 contains a stack of data latches
corresponding to the sense module. In one embodiment, there are
three data latches per sense module 580. The data latches can be
implemented as a shift register so that the parallel data stored
therein is converted to serial data for data bus 520, and
vice-versa. All the data latches corresponding to a read/write
block can be linked together to form a block shift register so that
a block of data can be input or output by serial transfer. In
particular, the bank of read/write modules may be configured such
that each of its set of data latches will shift data in to or out
of the data bus in sequence as if they are part of a shift register
for the entire read/write block.
[0058] In some embodiments, a non-volatile storage system, such as
non-volatile storage system 596 in FIG. 5A, may be implemented
using an integrated circuit. The integrated circuit may include
on-chip circuitry to generate a boosted voltage having a magnitude
that is greater than the highest power supply voltage provided to
the integrated circuit. The boosted voltage may be used for
providing power to portions of the electronic circuitry located on
the integrated circuit. The boosted voltage may be generated using
an on-chip charge pump system. In some cases, a charge pump system
may be used to generate an output voltage that is greater than the
highest supply voltage provided to the integrated circuit. In other
cases, a charge pump system may be used to generate an output
voltage that is less than the lowest supply voltage provided to the
integrated circuit (e.g., a negative charge pump system may
generate a voltage that is less than ground or VSS).
[0059] FIG. 6A depicts one embodiment of a portion of a sense
amplifier. In some cases, the portion of the sense amplifier may
correspond with a portion of sense module 580 in FIG. 5B. As
depicted, the portion of the sense amplifier includes a bit line BL
602 connected at the source side of an NMOS transistor 601 with a
gate controlled by BLC. During a sensing operation, the NMOS
transistor 601 may be set into a source follower configuration in
which the bit line is biased to a bit line voltage via application
of the appropriate voltage to BLC (e.g., setting BLC to roughly an
NMOS transistor threshold voltage above the bit line voltage). The
NMOS transistor threshold voltage may be elevated due to the body
effect. The precharge path for precharging the bit line BL 602 may
be via precharge path 622.
[0060] Prior to sensing current drawn from the bit line BL 602
during the sensing operation, the bit line BL 602 may be precharged
to a first voltage VDDSA (e.g., 2V) and the sensing node SEN 604
that is electrically coupled to the bit line BL 602 may be
precharged to a second voltage VHIGH that is greater than the first
voltage (e.g., 4V) via a precharge path 624 for precharging the
sensing node. During the sensing operation, as charge is drawn from
the sensing node, the voltage at the sensing node may reduce or
drop from the second voltage. As the voltage of the sensing node
SEN 604 drops, the voltage of the feedback node LBUS 606 may
increase via the sensing path 626 as PMOS transistor 610 turns on
or is set into a conducting state.
[0061] In one embodiment, if the sensing node SEN 604 drops more
than a PMOS transistor threshold voltage below the second voltage
VHIGH, then the feedback node LBUS 606 may be charged up via the
sensing path 626. As the voltage of the feedback node LBUS 606 is
increased, the NMOS transistor 612 may be turned on or set into a
conducting state causing the PMOS transistor 614 to be turned on or
set into a conducting state. As the drain of the PMOS transistor
614 is connected to the feedback node LBUS 606, the active pull-up
via the PMOS transistor 614 may quickly raise the voltage of the
feedback node LBUS 606 to the second voltage VHIGH. Once the
feedback node LBUS 606 has been pulled up to the second voltage,
the precharge path 624 for precharging the sensing node SEN 604 may
be disabled as the PMOS transistor 628 has been turned off or set
into a non-conducting state. If the feedback node LBUS 606 has not
been charged up to a voltage sufficient to turn off the PMOS
transistor 628, then the sensing node SEN 604 will be precharged
during a subsequent precharge phase for a subsequent sensing
operation via the precharge path 624.
[0062] FIG. 6B depicts one embodiment of voltage waveforms
corresponding with operation of the portion of the sense amplifier
depicted in FIG. 6A. As depicted, at time T1, LBUS and LSLH
transition from a high voltage (e.g., VHIGH) to a low voltage
(e.g., 0V) causing the sensing node SEN to be precharged to VHIGH
via the precharge path 624. The ACOM node that drives the gate of
the PMOS transistor 614 is also set to VHIGH. At time T2, LSLH
transitions from the low voltage to the high voltage cutting off
the precharge path 624 and the NMOS transistor 603 is set into a
conducting state such that the sensing node SEN 604 is electrically
coupled or connected to the bit line BL 602.
[0063] As depicted, between times T2 and T3, a first sensing
operation is performed in which the word line voltage applied to a
memory cell connected to the bit line BL 602 is not sufficient to
set the memory cell into a highly conducting state (HC) and instead
the memory cell remains in a non-conducting state (NC). Due to
charge leakage from the sensing node (e.g., due to parasitic
leakage currents), the voltage of the sensing node may drop
slightly; however, as the feedback node LBUS 606 has not been
pulled up sufficiently to cut off the PMOS transistor 628, the
precharge path 624 will be enabled once LSLH falls. At time T3,
LSLH falls causing the precharge path 624 to charge up the sensing
node SEN 604 up to VHIGH and STB rises causing the feedback node
LBUS to fall to VSS or 0V. At time T4, LSLH transitions from the
low voltage to the high voltage cutting off the precharge path 624
and the NMOS transistor 603 is set into a conducting state such
that the sensing node SEN 604 is electrically coupled or connected
to the bit line BL 602. In this case, between times T4 and T5, a
second sensing operation is performed in which the word line
voltage applied to the memory cell is sufficient to set the memory
cell into a conducting state or a highly conducting state (HC)
causing the voltage of the sensing node SEN 604 to fall and the
voltage of the feedback node LBUS 606 to be pulled up via the
sensing path 626. In the case that XFAST is low enabling the
feedback circuit comprising PMOS transistor 614 and NMOS transistor
612, once LBUS is charged up to the threshold voltage of the NMOS
transistor 612, the gate of the PMOS transistor 614 will be pulled
to ground causing the PMOS transistor 614 to pull up the feedback
node LBUS 606 to VHIGH. This active pull up on the feedback node
LBUS 606 caused by the configuration of PMOS transistor 614 and
NMOS transistor 612 allows the precharge path 624 to be quickly
disabled and also reduces the memory cell state data dependence on
the precharge time of the sensing node via the precharge path 624
during subsequent sensing operations. At time T5, LSLH falls, but
the sensing node SEN 604 is not charged up to VHIGH as the feedback
node LBUS 606 has been pulled up to VHIGH setting PMOS transistor
628 into a non-conducting state and cutting off the precharge path
624.
[0064] FIG. 7A is a flowchart describing one embodiment of a
process for sensing memory cells using a sense amplifier. In one
embodiment, the process of FIG. 7A may be performed by a sense
block, such as sense block 500 in FIG. 5B, or a sense amplifier,
such as the sense amplifier depicted in FIG. 6A.
[0065] In step 702, it is detected that a sensing operation is to
be performed by a sense amplifier. In step 704, it is detected that
an active pull-up feedback circuit connected to a feedback node of
the sense amplifier should be enabled during the sensing operation.
In one embodiment, the active pull-up feedback circuit is enabled
in response to detecting that a word line voltage applied to a word
line of a memory array is ramping up during the sensing operation
or detecting that ramp sensing is to be performed during the
sensing operation. In another embodiment, the active pull-up
feedback circuit is enabled in response to detecting that even/odd
sensing is to be performed during the sensing operation. In another
embodiment, the active pull-up feedback circuit is enabled in
response to detecting that a temperature associated with a memory
array is greater than a temperature threshold. In another
embodiment, the active pull-up feedback circuit is enabled in
response to detecting that a power supply voltage provided to the
sense amplifier or provided to a memory chip that includes the
sense amplifier is less than a particular voltage (e.g., is less
than 2.7V).
[0066] In step 706, the active pull-up feedback circuit is enabled
during the sensing operation. In step 708, a bit line of a memory
array is electrically coupled to the sense amplifier during the
sensing operation. In step 710, the bit line is precharged to a
first voltage (e.g., to a read voltage such as 2V). In step 712, a
sensing node of the sense amplifier is precharged to a second
voltage greater than the first voltage (e.g., to 3.5V or 4V). In
step 714, it is detected that the sensing node has dropped at least
a transistor threshold voltage below the second voltage during the
sensing operation. In one example, the sensing node may drop more
than a PMOS transistor threshold voltage below the second voltage
during the sensing operation. In step 716, the feedback node is set
to the second voltage in response to detecting that the sensing
node has dropped at least the transistor threshold voltage below
the second voltage. In some cases, setting the feedback node to the
second voltage may prevent the sensing node from being precharged
during other sensing operations subsequent to the sensing
operation. In one example, the feedback node may be set to a high
voltage (e.g., VHIGH or 4V) and the state of the feedback node may
be latched or held at the high voltage for one or more sensing
operations subsequent to the sensing operation.
[0067] In one embodiment, the precharge path for precharging the
sensing node to the second voltage may be different from the
sensing path for detecting that the sensing node has dropped at
least the transistor threshold voltage below the second voltage. In
some cases, the precharge path may be disabled via the feedback
node that is connected to a feedback circuit that pulls up the
feedback node to disable the precharge path if the feedback circuit
detects that the feedback node has risen more than a transistor
threshold voltage (e.g., an NMOS transistor threshold voltage)
above ground.
[0068] In some embodiments, even/odd sensing may be utilized in
which even bit lines are sensed during a first time period and the
odd bit lines are sensed during a second time period subsequent to
the first time period. To speed up sensing of memory cells during
even/odd sensing, the active pull-up feedback circuit connected to
the feedback node of the sense amplifier may be enabled during both
the first time period and the second time period.
[0069] FIG. 7B is a flowchart describing another embodiment of a
process for sensing memory cells using a sense amplifier. In one
embodiment, the process of FIG. 7B may be performed by a sense
block, such as sense block 500 in FIG. 5B, or a sense amplifier,
such as the sense amplifier depicted in FIG. 6A.
[0070] In step 732, a word line of a memory array is ramped up
during a sensing operation. In one example, the word line may be
ramped up from 100 mV to 4.5V at 200 mV per microsecond. In step
734, a bit line of the memory array is electrically coupled to a
sense amplifier during the sensing operation. A memory cell of the
memory array to be sensed may be arranged between the bit line and
the word line. In step 736, the bit line is precharged to a first
voltage (e.g., 2V). In step 738, a sensing node of the sense
amplifier is precharged to a second voltage greater than the first
voltage (e.g., 4V). In step 740, it is detected that the sensing
node has dropped at least a transistor threshold voltage below the
second voltage during the sensing operation. In step 742, the
sensing node is disabled or prevented from being precharged during
a second sensing operation subsequent to the sensing operation in
response to detecting that the sensing node has dropped at least
the transistor threshold voltage below the second voltage. In this
case, a feedback node of the sense amplifier may be set to the
second voltage in response to detecting that the sensing node has
dropped at least the transistor threshold voltage below the second
voltage. In some cases, setting the feedback node to the second
voltage may prevent the sensing node from being precharged during
the second sensing operation subsequent to the sensing
operation.
[0071] One embodiment of the disclosed technology includes a
sensing circuit and a feedback circuit. The sensing circuit
configured to precharge a sensing node of the sensing circuit to a
second voltage if a voltage of a feedback node of the sensing
circuit is less than a second transistor threshold voltage below
the second voltage. The sensing circuit configured to charge up the
feedback node in response to a voltage of the sensing node dropping
at least a first transistor threshold voltage below the second
voltage during a sensing operation. The feedback circuit configured
to set the feedback node to the second voltage if the voltage of
the feedback node rises to more than a third transistor threshold
voltage above ground during the sensing operation.
[0072] One embodiment of the disclosed technology includes
precharging a sensing node of a sense amplifier to a second
voltage, detecting that the sensing node has dropped at least a
transistor threshold voltage below the second voltage during a
sensing operation, and disabling the sensing node from being
precharged during one or more other sensing operations subsequent
to the sensing operation in response to detecting that the sensing
node has dropped at least the first transistor threshold voltage
below the second voltage. The disabling the sensing node includes
setting a feedback node of the sense amplifier to the second
voltage using a feedback circuit that pulls up the feedback node to
the second voltage if the feedback circuit detects that the
feedback node has risen more than a second transistor threshold
voltage above ground.
[0073] One embodiment of the disclosed technology includes a sense
amplifier and a feedback circuit. The sense amplifier including a
precharge path and a sensing path. The sense amplifier configured
to precharge a sensing node of the sense amplifier to a second
voltage using the precharge path and detect that a voltage of the
sensing node has dropped at least a PMOS transistor threshold
voltage below the second voltage using the sensing path during a
sensing operation. The sense amplifier configured to charge up a
feedback node of the sense amplifier in response to the voltage of
the sensing node dropping at least the PMOS transistor threshold
voltage below the second voltage during the sensing operation. The
feedback circuit configured to disable the sensing node from being
precharged during one or more other sensing operations subsequent
to the sensing operation in response to the feedback node rising to
more than an NMOS transistor threshold voltage above ground during
the sensing operation.
[0074] For purposes of this document, it should be noted that the
dimensions of the various features depicted in the figures may not
necessarily be drawn to scale.
[0075] For purposes of this document, reference in the
specification to "an embodiment," "one embodiment," "some
embodiments," or "another embodiment" may be used to describe
different embodiments and do not necessarily refer to the same
embodiment.
[0076] For purposes of this document, a connection may be a direct
connection or an indirect connection (e.g., via another part). In
some cases, when an element is referred to as being connected or
coupled to another element, the element may be directly connected
to the other element or indirectly connected to the other element
via intervening elements. When an element is referred to as being
directly connected to another element, then there are no
intervening elements between the element and the other element.
[0077] For purposes of this document, the term "based on" may be
read as "based at least in part on."
[0078] For purposes of this document, without additional context,
use of numerical terms such as a "first" object, a "second" object,
and a "third" object may not imply an ordering of objects, but may
instead be used for identification purposes to identify different
objects.
[0079] For purposes of this document, the term "set" of objects may
refer to a "set" of one or more of the objects.
[0080] Although the subject matter has been described in language
specific to structural features and/or methodological acts, it is
to be understood that the subject matter defined in the appended
claims is not necessarily limited to the specific features or acts
described above. Rather, the specific features and acts described
above are disclosed as example forms of implementing the
claims.
* * * * *