U.S. patent application number 15/152617 was filed with the patent office on 2016-12-01 for chemical mechanical polishing conditioner.
The applicant listed for this patent is KINIK COMPANY. Invention is credited to Chia-Feng Chiu, Jui-Lin Chou, Wen-Jen Liao, Xue-Shen Su.
Application Number | 20160346901 15/152617 |
Document ID | / |
Family ID | 57397920 |
Filed Date | 2016-12-01 |
United States Patent
Application |
20160346901 |
Kind Code |
A1 |
Chou; Jui-Lin ; et
al. |
December 1, 2016 |
Chemical Mechanical Polishing Conditioner
Abstract
Provided is a chemical mechanical polishing (CMP) conditioner
comprising: a substrate comprising a horizontal top surface and
multiple abrasive units mounted on the horizontal top surface. Each
abrasive unit comprises a base of the abrasive unit, an abrasive
layer, and a binding layer. The base of the abrasive unit comprises
an upper surface and a lower surface. The abrasive layer is formed
on the upper surface and comprises multiple abrasive tips. The
binding layer is formed between the lower surface and the
substrate, and an inclined plane is formed towards the lower
surface. The present invention further provides a method for
manufacturing the CMP conditioner. The polishing capabilities of
different regions of CMP conditioner can be regulated by the
abrasive units. Then the CMP conditioner of the present invention
satisfies the requirements in the current industry about different
polishing capabilities.
Inventors: |
Chou; Jui-Lin; (New Taipei
City, TW) ; Chiu; Chia-Feng; (New Taipei City,
TW) ; Liao; Wen-Jen; (New Taipei City, TW) ;
Su; Xue-Shen; (Taipei, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
KINIK COMPANY |
Taipei |
|
TW |
|
|
Family ID: |
57397920 |
Appl. No.: |
15/152617 |
Filed: |
May 12, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B24D 18/0027 20130101;
B24B 53/017 20130101 |
International
Class: |
B24B 53/017 20060101
B24B053/017; B24D 18/00 20060101 B24D018/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 1, 2015 |
TW |
104117686 |
Claims
1. A chemical mechanical polishing (CMP) conditioner comprising: a
substrate comprising a horizontal top surface; and multiple
abrasive units respectively mounted on the horizontal top surface;
each of the multiple abrasive units comprising: a base of the
abrasive unit; an abrasive layer; and a binding layer; the base of
the abrasive unit comprising an upper surface and a lower surface;
the upper surface being opposite the lower surface; the abrasive
layer formed on the upper surface and comprising multiple abrasive
tips; the binding layer formed between the lower surface and the
substrate, and an inclined plane formed towards the lower
surface.
2. The CMP conditioner as claimed in claim 1, wherein each of the
multiple abrasive units comprises a mat; the mat is mounted between
the horizontal top surface of the substrate and a side of the lower
surface; the binding layer is formed among the lower surface, the
mat, and the horizontal top surface; the inclined plane is formed
towards the lower surface.
3. The CMP conditioner as claimed in claim 1, wherein the substrate
comprises multiple concave portions; the multiple concave portions
are recessed into the horizontal top surface of the substrate; each
of the multiple concave portions comprises a bottom surface; each
of the multiple abrasive units comprises a mat; the mat is mounted
between the bottom surface of the concave portion and a side of the
lower surface; the binding layer is formed among the lower surface,
the mat, and the bottom surface.
4. The CMP conditioner as claimed in claim 1, wherein the substrate
comprises multiple concave portions; the multiple concave portions
are formed through the substrate; the CMP conditioner comprises a
base plate, and the base plate comprises a surface of the base
plate; the surface of the base plate is attached on the substrate
and the surface of the base plate is opposite the horizontal top
surface; each of the multiple abrasive units comprises a mat; the
mat is mounted among the concave portion, the surface of the base
plate, and a side of the lower surface; the binding layer is formed
between the lower surface and the surface of the base plate.
5. The CMP conditioner as claimed in claim 1, wherein a height of
the abrasive tip on one side is higher than a height of the
abrasive tip on the other side; the difference between the heights
of the abrasive tip on one side and the other side is larger than
or equal to 3 .mu.m and less than or equal to 50 .mu.m.
6. The CMP conditioner as claimed in claim 1, wherein the inclined
plane faces toward a central axis of the substrate.
7. The CMP conditioner as claimed in claim 1, wherein the inclined
plane faces away from a central axis of the substrate.
8. The CMP conditioner as claimed in claim 1, wherein the inclined
planes of the binding layers for a part of the multiple abrasive
units face toward a central axis of the substrate; the inclined
planes of the binding layers for another part of the multiple
abrasive units face away from the central axis of the
substrate.
9. The CMP conditioner as claimed in claim 2, wherein the inclined
plane faces toward the mat of the adjacent abrasive unit
tandemly.
10. The CMP conditioner as claimed in claim 1, wherein the
substrate is a stainless steel substrate, a die steel substrate, a
metal alloy substrate, a ceramic substrate, a plastic substrate, or
a combination thereof.
11. The CMP conditioner as claimed in claim 1, wherein the
thickness of the substrate is larger than or equal to 4 mm and less
than or equal to 30 mm.
12. The CMP conditioner as claimed in claim 1, wherein materials of
the binding layer comprise ceramic materials, brazing materials,
plating materials, or polymer materials.
13. The CMP conditioner as claimed in claim 1, wherein the base of
the abrasive unit is a conductive base or an insulated base; the
conductive base comprises molybdenum, tungsten, or tungsten
carbide; the insulated base comprises ceramic materials or single
crystal materials; the ceramic materials comprise silicon carbide,
and the single crystal materials comprise silicon, aluminium oxide,
or sapphire.
14. The CMP conditioner as claimed in claim 1, wherein an abrasive
membrane is formed on the abrasive layer; the abrasive membrane
comprises a ceramic film or a diamond film.
15. The CMP conditioner as claimed in claim 13, wherein the
shortest vertical distance between the top of the abrasive tip and
the lower surface is larger than or equal to 2 mm and less than or
equal to 10 mm.
16. The CMP conditioner as claimed in claim 1, wherein a shape of
the abrasive tip is blade-shaped, conical, arced, cylindrical,
pyramidal, or prismatic.
17. The CMP conditioner as claimed in claim 2, wherein a thickness
of the mat is larger than or equal to 3 .mu.m and less than or
equal to 50 .mu.m.
18. The CMP conditioner as claimed in claim 2, wherein materials of
the mat comprise stainless steel or plastic.
19. A method for manufacturing a CMP conditioner comprising:
providing multiple abrasive units; providing a substrate comprising
a horizontal top surface; mounting multiple mats on the horizontal
top surface; abutting a side of each abrasive unit against the
multiple mats respectively, and each abrasive unit contacting the
horizontal top surface obliquely; and forming a binding layer
between each abrasive unit and the horizontal top surface, then
obtaining the CMP conditioner.
20. The method for manufacturing a CMP conditioner as claimed in
claim 19, wherein the step of providing multiple abrasive units
comprises: providing multiple bases of the abrasive units; each
base of the abrasive units comprises an upper surface and a lower
surface, and the upper surface is opposite the lower surface; and
forming an abrasive layer on the upper surface to obtain the
abrasive units, and the abrasive layer comprising multiple abrasive
tips.
21. The method for manufacturing a CMP conditioner as claimed in
claim 20, wherein the steps of abutting a side of each abrasive
unit against the multiple mats and forming a binding layer
comprise: abutting one side of the lower surface against the
multiple mats respectively, and the other side of the lower surface
contacting the horizontal top surface; then each abrasive unit
contacting the horizontal top surface obliquely; and forming the
binding layer between the lower surface and the horizontal top
surface to obtain the CMP conditioner.
22. The method for manufacturing a CMP conditioner as claimed in
claim 20, wherein the step of abutting a side of each abrasive unit
against the multiple mats comprises: providing a flat jig
comprising a jig surface; mounting multiple mats on the jig
surface; abutting one side of the abrasive layer against the
multiple mats respectively, and the other side of the abrasive
layer contacting the jig surface; mounting the substrate on the
lower surface of each abrasive unit horizontally, then each
abrasive unit contacting the horizontal top surface obliquely; and
wherein the step of forming a binding layer comprises: forming the
binding layer between the lower surface and the horizontal top
surface, then removing the flat jig and the multiple mats;
obtaining the CMP conditioner finally.
Description
CROSS-REFERENCE TO RELATED APPLICATION(S)
[0001] This application is based upon and claims priority under 35
U.S.C. 119(a) from Taiwan Patent Application No. 104117686 filed on
Jun. 1, 2015, which is hereby specifically incorporated herein by
this reference thereto.
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0002] The present invention relates to a chemical mechanical
polishing field and more particularly to a chemical mechanical
polishing (CMP) conditioner.
2. Description of the Related Art
[0003] CMP, being a large area planarization technique, is an
important method for semiconductor manufacturing. Users can prepare
a pad on the platform, and further add slurry on the surface of the
pad. The pad can be rotated with the platform. The rotating
direction of the pad is relative to a wafer, and the surface of the
wafer is polished by the pad. It is beneficial to advance
subsequent processes after planarization of the wafer. The
efficiency of polishing may be preserved by maintaining the
roughness of the pad. A hardened layer is formed gradually on the
surface of the pad by accumulating the slurry and the scraps
produced by wafer during the polishing process. The hardened layer
decreases the polishing efficiency and shortens the lifetime of the
pad.
[0004] In order to maintain the roughness of the pad, users need a
CMP conditioner to dress the surface of the pad continuously during
the polishing process, so as to prolong the life time of the pad.
With enlargement of the wafer size in the semiconductor
manufacturing, the influences of wafer quality become more
obviously from difference between the center of the wafer and the
outer edge of the wafer. The requirements of diverse polishing
capabilities for different regions of CMP conditioner increase
gradually from the current industry. Similarly, the CMP conditioner
needs to have diverse polishing capabilities for different
regions.
[0005] In view of the abovementioned problem, Taiwan Patent
Application No. 97110627 discloses a cutting tool for ultra hard
material comprising: a base, a plurality of cutting units, and a
combining unit. The base is a disc. A through hole is formed in the
center of the base. A working surface is formed on one side of the
base. There are multiple long troughs disposed on the working
surface. The cutting units have cutting ends. Multiple sharp peaks
are formed on the cutting ends. The multiple sharp peaks are
parallel with one another. Each cutting unit has two sides. The
first side is mounted in the long troughs, and the second side is
mounted out of the long troughs. The cutting ends protrude from the
working surface. The combining unit is binding with the cutting
units on the base. This patent utilizes the long troughs to change
the inclined angle of the cutting tool and then increases the
cutting efficiency. However only the cutting ends of the cutting
tool protrude from the working surface, and the cutting ends are
really smaller than the whole cutting unit. In order to change the
cutting capability for each region, users need to regulate the
height of each cutting end protruding from the working surface
separately to achieve continuously different dressing depths. The
processes are very complicated and time consuming. It is not good
for mass production.
[0006] Patent publication TW 201029805A1 discloses an apparatus for
dressing a polishing pad comprising: a dresser drive shaft which is
rotatable and vertically movable, a dresser flange coupled to the
dresser drive shaft and configured to secure a dressing member
thereto, a spherical bearing provided in the dresser flange and
configured to allow the dressing member to tilt with respect to the
dresser drive shaft, and a spring mechanism configured to generate
a force against a tilting motion of the dressing member. This
patent utilizes the spherical bearing to help the dressing member
to be oblique to the dresser drive shaft. The vibration vertical to
the polishing pad of the apparatus from the polishing process can
be relieved, then decreasing the loading of the apparatus. The
problem of this patent is that the inclined angle between the
polishing pad and the dressing member cannot be regulated partially
during the polishing process.
[0007] Taiwan Patent Application No. 96125259 discloses an
apparatus for conditioning a conductive polishing material. The
apparatus comprises a backing plane and an annular member. The
backing plane is adapted to couple to a conditioning head assembly.
The backing plane comprises a rigid disk. The rigid disk has a
first side and an opposing second side. The second side has a
perpendicular orientation to a centerline of the backing plate. The
annular member has a base portion adhered to the second side of the
backing plate. The annular member defines a conditioning surface
opposite the second side that is radially sloped relative to a
plane of the second side. This patent utilizes the above radial
oblique to form an inclined plane. In order to construct different
heights of the polishing surface, the annular member should be
working repeatedly. The problem of this patent is that working
complication and high accuracy of processing are hard to
control.
[0008] Therefore, the conventional CMP conditioner still needs to
be improved to meet the requirement in the industry.
SUMMARY OF THE INVENTION
[0009] An objective of the present invention is to provide a CMP
conditioner having diverse polishing capabilities on different
regions. The present invention of the above CMP conditioner can
meet the requirements in the industry.
[0010] The present invention provides a CMP conditioner
comprising:
[0011] a substrate comprising a horizontal top surface; and
[0012] multiple abrasive units respectively mounted on the
horizontal top surface; each of the multiple abrasive units
comprising: a base of the abrasive unit, an abrasive layer, and a
binding layer; the base of the abrasive unit comprising an upper
surface and a lower surface, and the upper surface being opposite
the lower surface; the abrasive layer formed on the upper surface
and comprising multiple abrasive tips; the binding layer formed
between the lower surface and the substrate, and an inclined plane
formed towards the lower surface.
[0013] The polishing capabilities of different regions of the CMP
conditioner in the present invention can be regulated by abrasive
units of the horizontal top surface. Each base of the abrasive unit
is oblique to the horizontal top surface of the substrate by the
inclined plane of the binding layer. The continuously different
dressing depths of the abrasive tips may be formed to control the
polishing capability for each abrasive unit when dressing the
surface of the polishing pad. The CMP conditioner of the present
invention satisfies diverse requirements of polishing capabilities
in the current industry.
[0014] Preferably, each of the multiple abrasive units further
comprises a mat. The mat is mounted between the horizontal top
surface of the substrate and a side of the lower surface. The
binding layer is formed among the lower surface, the mat, and the
horizontal top surface. The inclined plane is formed toward the
lower surface.
[0015] In addition, the substrate further comprises multiple
concave portions. The multiple concave portions are recessed into
the horizontal top surface of the substrate. Each of the multiple
concave portions comprises a bottom surface. Each of the multiple
abrasive units further comprises a mat. The mat is mounted between
the bottom surface of the concave portion and a side of the lower
surface. The binding layer is formed among the lower surface, the
mat, and the bottom surface.
[0016] Furthermore, the substrate further comprises multiple
concave portions. The multiple concave portions are formed through
the substrate. The CMP conditioner further comprises a base plate,
and the base plate comprises a surface of the base plate. The
surface of the base plate is attached on the substrate and opposite
the horizontal top surface. Each of the multiple abrasive units
further comprises a mat. The mat is mounted among the concave
portion, the surface of the base plate, and a side of the lower
surface. The binding layer is formed between the lower surface and
the surface of the base plate. The concave portions provide better
fixing effects for the abrasive units. In addition, the distance
between the abrasive tip and the horizontal top surface can be
controlled by changing the depth of each of the concave
portions.
[0017] Preferably, a height of the abrasive tip on one side is
higher than a height of the abrasive tip on the other side. The
difference between the heights of the abrasive tips on one side and
the other side is larger than or equal to 3 .mu.m and less than or
equal to 50 .mu.m.
[0018] Preferably, the substrate comprises a central axis. A normal
direction of the horizontal top surface is parallel to the central
axis, and the central axis is on the center of the horizontal top
surface. The inclined plane faces toward the central axis of the
substrate.
[0019] In addition, the inclined plane faces away from the central
axis of the substrate.
[0020] Additionally, the inclined planes of the binding layers for
a part of the multiple abrasive units face toward the central axis
of the substrate. The inclined planes of the binding layers for
another part of the multiple abrasive units face away from the
central axis of the substrate.
[0021] Furthermore, the inclined plane faces toward a mat of the
adjacent abrasive unit tandemly.
[0022] Preferably, the substrate is a stainless steel substrate, a
die steel substrate, a metal alloy substrate, a ceramic substrate,
a plastic substrate, or a combination thereof.
[0023] Preferably, the thickness of the substrate is larger than or
equal to 4 mm and less than or equal to 30 mm.
[0024] Preferably, materials of the binding layer comprise ceramic
materials, brazing materials, plating materials, or polymer
materials. More preferably, the brazing materials comprise: iron,
cobalt, chromium, manganese, silicon, aluminum, or combinations
thereof. The polymer materials comprise: epoxy, polyester resins,
polyacrylic acid resins, or phenol formaldehyde resins.
[0025] Preferably, the base of the abrasive unit is a conductive
base or an insulated base. More preferably, the conductive base
comprises: molybdenum, tungsten, or tungsten carbide.
[0026] Preferably, the insulated base comprises ceramic materials.
More preferably, the ceramic materials comprise silicon carbide.
The single crystal materials comprise silicon or aluminium
oxide.
[0027] Preferably, the insulated base comprises single crystal
materials. More preferably, the single crystal materials comprise
silicon, aluminium oxide, or sapphire.
[0028] Preferably, an abrasive membrane is formed on the abrasive
layer. The abrasive membrane comprises a ceramic film or diamond
film. The ceramic film comprises: aluminium oxide, zirconia,
silicon carbide, titanium nitride, or aluminium-titanium oxide. The
diamond film comprises: single crystal diamond or polycrystalline
diamond.
[0029] Preferably, the shortest vertical distance between the top
of the abrasive tip and the lower surface is larger than or equal
to 2 mm and less than or equal to 10 mm. More preferably, the
shortest vertical distance between the top of the abrasive tip and
the lower surface is larger than or equal to 4 mm and less than or
equal to 6 mm. The most preferably, the shortest vertical distance
between the top of the abrasive tip and the lower surface is 4
mm.
[0030] Preferably, a shape of the abrasive tip is blade-shaped,
conical, arced, cylindrical, pyramidal, or prismatic. More
preferably, the prismatic shape is rectangular prism.
[0031] Preferably, the tip angle of the abrasive tip is larger than
or equal to 60.degree. and less than or equal to 120.degree.. More
preferably, the tip angle of the abrasive tip is 60.degree.,
90.degree., or 120.degree..
[0032] Preferably, a thickness of the mat is larger than or equal
to 3 .mu.m and less than or equal to 50 .mu.m.
[0033] Preferably, materials of the mat comprise stainless steel or
plastic.
[0034] The present invention further provides a CMP conditioner
comprising:
[0035] providing multiple abrasive units;
[0036] providing a substrate comprising a horizontal top
surface;
[0037] mounting multiple mats on the horizontal top surface;
[0038] abutting a side of each abrasive unit against the multiple
mats respectively, and each abrasive unit contacting the horizontal
top surface obliquely; and
[0039] forming a binding layer between each abrasive unit and the
horizontal top surface, then obtaining the CMP conditioner.
[0040] Preferably, the step of providing multiple abrasive units
comprises:
[0041] providing multiple bases of the abrasive units; each base of
the abrasive units comprising an upper surface and a lower surface,
and the upper surface being opposite the lower surface; and
[0042] forming an abrasive layer on the upper surface to obtain the
abrasive units, and the abrasive layer comprising multiple abrasive
tips.
[0043] Preferably, the steps of abutting a side of each abrasive
unit against the multiple mats and forming a binding layer
comprise:
[0044] abutting one side of the lower surface against the multiple
mats respectively, and the other side of the lower surface
contacting the horizontal top surface; then each abrasive unit
contacting the horizontal top surface obliquely; and
[0045] forming a binding layer between the lower surface and the
horizontal top surface to obtain the CMP conditioner.
[0046] In addition, the step of abutting a side of each abrasive
unit against the multiple mats comprises:
[0047] providing a flat jig comprising a jig surface;
[0048] mounting multiple mats on the jig surface;
[0049] abutting one side of the abrasive layer against the multiple
mats respectively, and the other side of the abrasive layer
contacting the jig surface;
[0050] mounting the substrate on the lower surface of each abrasive
unit horizontally, then each abrasive unit contacting the
horizontal top surface obliquely; and
[0051] wherein the step of forming a binding layer comprises:
[0052] forming the binding layer between the lower surface and the
horizontal top surface, then removing the flat jig and the multiple
mats; obtaining the CMP conditioner finally.
[0053] Preferably, the vertical distance between the lower surface
and the horizontal top surface is larger than or equal to 3 .mu.m
and less than or equal to 50 .mu.m.
[0054] Preferably, each of the inclined planes faces toward the
central axis of the substrate.
[0055] In addition, each of the inclined planes faces away from the
central axis of the substrate.
[0056] Additionally, the inclined planes of the binding layers for
a part of the multiple abrasive units face toward the central axis
of the substrate. The inclined planes of the binding layers for
another part of the multiple abrasive units face away from the
central axis of the substrate.
[0057] Preferably, the substrate is a stainless steel substrate, a
die steel substrate, a metal alloy substrate, a ceramic substrate,
a plastic substrate, or a combination thereof.
[0058] Preferably, the thickness of the substrate is larger than or
equal to 4 mm and less than or equal to 30 mm.
[0059] Preferably, materials of the binding layer comprise ceramic
materials, brazing materials, plating materials, or polymer
materials. More preferably, the brazing materials comprise: iron,
cobalt, chromium, manganese, silicon, aluminum, or combinations
thereof. The polymer materials comprise: epoxy, polyester resins,
polyacrylic acid resins, or phenol formaldehyde resins.
[0060] Preferably, the base of the abrasive unit is a conductive
base or an insulated base. More preferably, the conductive base
comprises: molybdenum, tungsten, or tungsten carbide.
[0061] Preferably, the insulated base comprises ceramic materials.
More preferably, the ceramic materials comprise silicon carbide.
The single crystal materials comprise silicon or aluminium
oxide.
[0062] Preferably, the insulated base comprises single crystal
materials. More preferably, the single crystal materials comprise
silicon or aluminium oxide.
[0063] Preferably, the shortest vertical distance between the top
of the abrasive tip and the lower surface is larger than or equal
to 2 mm and less than or equal to 10 mm. More preferably, the
shortest vertical distance between the top of the abrasive tip and
the lower surface is larger than or equal to 4 mm and less than or
equal to 6 mm. The most preferably, the shortest vertical distance
between the top of the abrasive tip and the lower surface is 4
mm.
[0064] Preferably, a shape of the abrasive tip is blade-shaped,
conical, arced, cylindrical, pyramidal, or prismatic. More
preferably, the prismatic shape is rectangular prism.
[0065] Preferably, the tip angle of the abrasive tip is larger than
or equal to 60.degree. and less than or equal to 120.degree.. More
preferably, the tip angle of the abrasive tip is 60 .degree.,
90.degree., or 120.degree..
[0066] Preferably, a thickness of the mat is larger than or equal
to 3 .mu.m and less than or equal to 50 .mu.m.
[0067] Preferably, materials of the mat comprise stainless steel or
plastic.
[0068] The method for manufacturing a CMP conditioner of the
present invention is good for speedy and large-scaled mass
production. The polishing capability of different regions of CMP
conditioner can be regulated by the base of the abrasive units and
the abrasive tips. The continuously different dressing depths are
formed on the abrasive tips by the different arrangements of the
binding layer. The present invention of the above CMP conditioner
can meet the requirements in the current industry.
BRIEF DESCRIPTION OF THE DRAWINGS
[0069] FIG. 1 is a perspective view of a CMP conditioner in
accordance with Embodiment 1 of the present invention;
[0070] FIG. 2 is a cross-sectional schematic view of the CMP
conditioner in accordance with Embodiment 1 of the present
invention;
[0071] FIG. 3 is a perspective view of a CMP conditioner in
accordance with Embodiment 2 of the present invention;
[0072] FIG. 4A is a cross-sectional schematic view of the CMP
conditioner in accordance with Embodiment 2 of the present
invention;
[0073] FIG. 4B is a partial enlarged view of the abrasive unit in
accordance with Embodiment 2 of the present invention;
[0074] FIG. 5 is a perspective view of a CMP conditioner in
accordance with Embodiment 3 of the present invention;
[0075] FIG. 6 is a cross-sectional schematic view of the CMP
conditioner in accordance with Embodiment 3 of the present
invention;
[0076] FIG. 7 is a perspective view of a CMP conditioner in
accordance with Embodiment 4 of the present invention;
[0077] FIG. 8 is a cross-sectional schematic view of a CMP
conditioner in accordance with Embodiment 5 of the present
invention;
[0078] FIG. 9 is a cross-sectional schematic view of a CMP
conditioner in accordance with Embodiment 6 of the present
invention;
[0079] FIG. 10 is a cross-sectional schematic view of a CMP
conditioner in accordance with Embodiment 7 of the present
invention; and
[0080] FIG. 11 is a cross-sectional schematic view of the CMP
conditioner, a flat jig, and multiple mats in accordance with
Embodiment 7 of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
Embodiment 1
[0081] With reference to FIGS. 1 and 2, a first embodiment of the
present invention provides a CMP conditioner 1 comprising a
substrate 10 and six abrasive units 20. The substrate 10 is
circular. The substrate 10 is made of stainless steel. The
thickness of the substrate 10 is 6 mm. The substrate 10 comprises a
horizontal top surface 11 and a central axis. A normal direction of
the horizontal top surface 11 is parallel to the central axis, and
the central axis is on the center of the horizontal top surface 11.
The abrasive units 20 are mounted on the horizontal top surface 11,
and the abrasive units 20 are arranged around the outer edge of the
horizontal top surface 11 along the central axis at spaced
intervals. Each of the six abrasive units 20 comprises a base 21 of
the abrasive unit, an abrasive layer 22, a mat 23, and a binding
layer 24. The base 21 of the abrasive unit is a conductive base.
The base 21 of the abrasive unit is made of tungsten carbide. The
base 21 of the abrasive unit is circular. The base 21 of the
abrasive unit comprises an upper surface and a lower surface.
Multiple tips of patterned surfaces are formed on the upper surface
by Electrical Discharge Machining (EDM). The abrasive layer 22 is
deposited on the patterned surface by Chemical Vapor Deposition
(CVD). Multiple abrasive tips 221 are formed through the above
method. The abrasive layer 22 is consisting of polycrystalline
diamond. The crystal size of the polycrystalline diamond is 15 nm.
The shape of each abrasive tip 221 is pyramidal. The tip angle of
each abrasive tip 221 is 60.degree.. The shortest vertical
distances d1 between tips of the abrasive tips 221 and the lower
surface are equal. The shortest vertical distance d1 is 4 mm.
[0082] The lower surface comprises an abutting side 211 and a
mating side 212. The abutting side 211 is opposite the mating side
212. The abutting side 211 is abutting against the horizontal top
surface 11, and the mating side 212 is in contact with the mat 23.
A height of the abrasive tips 221 on the mating side 212 is higher
than the height of the other abrasive tips 221 on the abutting side
211. The height difference d2 between the abrasive tips 221 on the
mating side 212 and the other abrasive tips 221 on the abutting
side 211 is 10 .mu.m.
[0083] The mat 23 is a sheet. The mat 23 is made of stainless
steel. The mat 23 is attached on the horizontal top surface 11. In
particular, the mat 23 is mounted on the mating side 212 of the
base 21 of the abrasive unit. The thickness of the mat 23 is 10
.mu.m.
[0084] The binding layer 24 is filled among the lower surface, the
horizontal top surface 11, and the mat 23. The binding layer 24
comprises an inclined plane 241. The inclined plane 241 is formed
on the lower surface and faces to the central axis. The binding
layer 24 is made of iron.
[0085] The polishing capability of each region for the CMP
conditioner 1 can be regulated by the abrasive units 20 on the
horizontal top surface 11. Each base 21 of the abrasive unit is
oblique to the horizontal top surface 11 by the mat 23 and the
binding layer 24.The slope of the inclined plane 241 can be
regulated by arrangement of the mat 23 and the binding layer 24.
The continuously different dressing depths are formed on the
abrasive tips 221 by the above arrangement in the polishing
process. Users can further change the polishing capability for each
abrasive unit 20.
Embodiment 2
[0086] With reference to FIGS. 3, 4A and 4B, a second embodiment of
the present invention provides a CMP conditioner 1A substantially
same as the CMP conditioner 1 of the first embodiment. The
difference is that the substrate 10A is made of ceramic materials.
The thickness of the substrate 10A is 10 mm.
[0087] The number of the abrasive units 20A is three. The base 21A
of the abrasive unit is arc-shaped. The base 21A of the abrasive
unit is an insulated base. The base 21A of the abrasive unit is
made of silicon carbide. The base 21A of the abrasive unit
comprises a smooth surface. The abrasive layer 22A is deposited on
the smooth surface by CVD. Multiple abrasive tips 221A are formed
through the above method. The shortest vertical distances d1
between a tip of each abrasive tip 221A and the lower surface is 5
mm. The height difference d2 between the abrasive tips 221A on the
mating side 212A and the abrasive tips 221A on the abutting side
211A is 20 .mu.m.
[0088] The mat 23A is made of plastic, and the thickness of the mat
23A is 20 .mu.m.
[0089] The binding layer 24A is made of epoxy. The inclined plane
241A faces away from the central axis of the substrate 10A.
[0090] The second embodiment of the present invention provides a
CMP conditioner 1A that utilizes changing the shape of the base 21A
of the abrasive unit and the direction of the inclined plane 241A
for the binding layer 24A to achieve different polishing
capabilities from the CMP conditioner 1 of the first embodiment of
the present invention.
Embodiment 3
[0091] With reference to FIGS. 5 and 6, a third embodiment of the
present invention provides a CMP conditioner 1B substantially same
as the CMP conditioner 1 of the first embodiment. The difference is
that the number of the abrasive units 20B is four. The base 21B of
the abrasive units is elongated. The abrasive units 20B are
arranged in a cross symbol. The shape of each abrasive tip 221B is
rectangular prism. The tip angle of each abrasive tip 221B is
90.degree.. The inclined plane 241B of the partial binding layer
24B faces to the central axis of the substrate 10B, and the
inclined plane 241B of the other binding layer 24B faces away from
the central axis of the substrate 10B.
[0092] The third embodiment of the present invention provides a CMP
conditioner 1B that utilizes changing shapes of the abrasive tips
221B and the direction of the inclined plane 241B for the binding
layer 24B to achieve different polishing capabilities from CMP
conditioner 1 of the first embodiment of the present invention.
[0093] The polishing capabilities of each region of the CMP
conditioner can be regulated by changing the arrangement and the
position of the abrasive units, changing the shapes of the base 21B
of the abrasive units, changing the longest vertical distance
between the lower surface and the horizontal top surface (slope),
changing the shapes of the abrasive tips, or changing the direction
of the inclined plane of the binding layer for the CMP conditioner
of the present invention. The CMP conditioner of the present
invention can meet the requirement in the industry.
[0094] The present invention further provides a method for
manufacturing a CMP conditioner comprising the following steps:
[0095] Firstly, prepare a substrate which comprises a horizontal
top surface. Then the multiple mats are attached on the horizontal
top surface of the substrate.
[0096] Prepare multiple bases of the abrasive unit and each base of
the abrasive unit comprises an upper surface and a lower surface.
The number of the bases of the abrasive units is equal to the
number of the mats.
[0097] An abrasive layer is deposited on the upper surface by CVD.
The abrasive layer comprises multiple abrasive tips. The material
of the abrasive layer comprises polycrystalline diamond.
[0098] The lower surface comprises two opposite sides. One side is
an abutting side, and the other side is a mating side. The mating
side is in contact with the mat, and the abutting side is abutting
against the horizontal top surface.
[0099] In order to obtain the CMP conditioner, fill a binding layer
among the mat, the lower surface, and the horizontal top surface.
An inclined plane of the binding layer is formed on the lower
surface. The binding layer is made of epoxy. The method for
manufacturing a CMP conditioner of the present invention is very
simple. It is good for speedy and large-scale mass production. The
polishing capability of different regions of CMP conditioner can be
regulated by the base of the abrasive units and the abrasive tips.
The continuously different dressing depths are formed on the
abrasive tips by the different arrangements of the binding layer
and the mat. The present invention of the above CMP conditioner can
meet the requirements in the current industry.
Embodiment 4
[0100] With reference to FIG. 7, a fourth embodiment of the present
invention provides a CMP conditioner 1C substantially same as the
CMP conditioner 1 of the first embodiment. The difference is that
each inclined plane faces to the mat 23C of the next adjacent
abrasive unit 20C. In other words, directions of the inclined
planes are changed along the outer edge of the horizontal top
surface 11C.
[0101] When the CMP conditioner 1C is used for dressing the surface
of the polishing pad, the directions of the inclined planes are the
same with the rotating direction of the CMP conditioner 1C. The
resistance between the CMP conditioner 1C and the polishing pad can
be reduced, so as to prolong the life time of the CMP conditioner
1C indirectly.
Embodiment 5
[0102] With reference to FIG. 8, a fifth embodiment of the present
invention provides a CMP conditioner 1D substantially same as the
CMP conditioner 1 of the first embodiment. The difference is that
the substrate 10D further comprises multiple concave portions 12D.
The multiple concave portions 12D are recessed into the horizontal
top surface 11D. The multiple concave portions 12D are arranged
around the outer edge of the horizontal top surface 11D along the
central axis at spaced intervals. Each of the multiple concave
portions 12D comprises a bottom surface 121D. The mat 23D is
attached on the bottom surface 121D. The abutting side 211D abuts
against the bottom surface 121D. The mating side 212D contacts the
mat 23D. The binding layer 24D is filled among the lower surface,
the bottom surface 121D, and the mat 23D.
[0103] The fifth embodiment of the present invention provides
better fixing effects for the abrasive units 20D through the
multiple concave portions 12D.
Embodiment 6
[0104] With reference to FIG. 9, a sixth embodiment of the present
invention provides a CMP conditioner 1E substantially same as the
CMP conditioner 1 of the first embodiment. The difference is that
the substrate 10E further comprises multiple concave portions 12E.
The multiple concave portions 12E are formed through the horizontal
top surface 11E. The multiple concave portions 12E are arranged
around the outer edge of the horizontal top surface 11E along the
central axis at spaced intervals. The CMP conditioner 1E further
comprises a base plate 30E, and the base plate 30E comprises a
surface 31E of the base plate. The surface 31E of the base plate is
attached on the substrate 10E and the surface 31E of the base plate
is opposite the horizontal top surface 11E. In this embodiment, the
base plate 30E is fixed on the substrate 10E by multiple screws
40E. The mat 23E is mounted in the concave portions 12E and the mat
23E is attached on the surface 31E of the base plate. The abutting
side 211E abuts against the surface 31E of the base plate. The
mating side 212E contacts the mat 23E. The binding layer 24E is
filled among the lower surface, the base plate 30E, and the mat
23E.
[0105] The sixth embodiment of the present invention provides
better fixing effects for the abrasive units 20E through the
multiple concave portions 12E.
Embodiment 7
[0106] With reference to FIG. 10, the present invention further
provides a CMP conditioner 1F comprising a substrate 1OF and
multiple abrasive units 20F. The substrate 10F comprises a
horizontal top surface 11F. The multiple abrasive units 20F are
mounted on the horizontal top surface 11F. Each of the abrasive
units 20F comprises a base 21F of the abrasive unit, an abrasive
layer 22F, and a binding layer 24F. The base 21F of the abrasive
unit comprises an upper surface and a lower surface, and the upper
surface is opposite the lower surface. The abrasive layer 22F is
formed on the upper surface. The abrasive layer 22F comprises
multiple abrasive tips 221F. The binding layer 24F is formed
between the lower surface and the horizontal top surface 11F. An
inclined plane 241F is formed on the binding layer 24F, and the
inclined plane 241F faces to the lower surface.
[0107] With reference to FIG. 11, the present invention further
provides a method for manufacturing a CMP conditioner 1F comprising
the following steps:
[0108] First of all, prepare a flat jig 50F which comprises a jig
surface 51F. Then the multiple mats 23F are attached on the jig
surface 51F.
[0109] Prepare multiple bases 21F of the abrasive unit, each base
21F of the abrasive unit comprising an upper surface and a lower
surface. The number of the bases 21F of the abrasive unit is equal
to the number of the mats 23F.
[0110] The abrasive layer 22F is deposited on the upper surface by
CVD. The abrasive layer 22F comprises multiple abrasive tips 221F.
The material of the abrasive layer 22F comprises polycrystalline
diamond.
[0111] One side of the abrasive layer 22F abuts against the mat
23F, and the other side of the abrasive layer 22F abuts against the
jig surface 51F. The lower surface is oblique.
[0112] Then prepare the substrate 10F which comprises a horizontal
top surface 11F. The horizontal top surface 11F abuts a side of the
lower surface. The substrate 10F is parallel to the flat jig
50F.
[0113] In order to obtain the CMP conditioner 1F, remove the flat
jig 50F and the mats 23F after filling the binding layer 24F
between the substrate 10F and the lower surface. The inclined plane
241F of the binding layer 24F is formed on the lower surface. The
binding layer 24F is made of epoxy.
[0114] The method for manufacturing a CMP conditioner of the
present invention is very simple. It is good for speedy and
large-scale production. The polishing capabilities of different
regions of CMP conditioner can be regulated by the base of the
abrasive units and the abrasive tips. The continuously different
dressing depths are formed on the abrasive tips by the different
arrangements of the binding layer. The above CMP conditioner of the
present invention can meet the requirements in the current
industry.
* * * * *