U.S. patent application number 14/429776 was filed with the patent office on 2016-11-24 for coa woled structure and manufacturing method thereof.
This patent application is currently assigned to Shenzhen China Star Optoelectronics Technology Co. Ltd.. The applicant listed for this patent is SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD.. Invention is credited to Longqiang SHI, Qinghua ZOU.
Application Number | 20160343788 14/429776 |
Document ID | / |
Family ID | 52853930 |
Filed Date | 2016-11-24 |
United States Patent
Application |
20160343788 |
Kind Code |
A1 |
ZOU; Qinghua ; et
al. |
November 24, 2016 |
COA WOLED STRUCTURE AND MANUFACTURING METHOD THEREOF
Abstract
The present invention provides a COA WOLED structure and a
manufacturing method thereof. The structure includes red/green/blue
sub pixel zones and each sub pixel zone includes a substrate (1), a
gate terminal (2), a gate insulation layer (3), an oxide
semiconductor layer (4), an etch stop layer (5), source/drain
terminals (6), a passivation protection layer (7), a red/green/blue
photoresist layer (71/72/73), a planarization layer (8), a
semi-reflection layer (9), an anode layer (10), a pixel definition
layer (11), a photo spacer (12), a white light emission layer (13),
a cathode layer (14), and a packaging lid (15). The present
invention arranges a semi-transparent metal layer formed on a
planarization layer to serve as a semi-reflection layer to use
micro cavity resonance between an anode and a cathode and controls
the thicknesses of the anode layers corresponding to the
red/green/blue photoresist layers so as to obtain optimum micro
cavity lengths for different colors of light thereby enhancing the
light emission efficiency of the three primary colors of
red/green/blue transmitting through a color filter and thus
effectively improving the brightness of a COA WOLED device.
Inventors: |
ZOU; Qinghua; (Shenzhen,
Guangdong, CN) ; SHI; Longqiang; (Shenzhen,
Guangdong, CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD. |
Shenzhen, Guangdong |
|
CN |
|
|
Assignee: |
Shenzhen China Star Optoelectronics
Technology Co. Ltd.
Shenzhen, Guangdong
CN
|
Family ID: |
52853930 |
Appl. No.: |
14/429776 |
Filed: |
February 9, 2015 |
PCT Filed: |
February 9, 2015 |
PCT NO: |
PCT/CN2015/072563 |
371 Date: |
March 19, 2015 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/3276 20130101;
H01L 51/5271 20130101; H01L 51/56 20130101; H01L 51/5206 20130101;
H01L 27/3246 20130101; H01L 51/5265 20130101; H01L 2227/323
20130101; H01L 27/124 20130101; H01L 27/1225 20130101; H01L 27/3211
20130101; H01L 27/3262 20130101; H01L 2251/558 20130101; H01L
27/322 20130101 |
International
Class: |
H01L 27/32 20060101
H01L027/32; H01L 51/56 20060101 H01L051/56; H01L 27/12 20060101
H01L027/12; H01L 51/52 20060101 H01L051/52 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 29, 2014 |
CN |
201410836087.6 |
Claims
1. A color filter on array (COA) white organic light emitting diode
(WOLED) structure, comprising a red sub pixel zone, a green sub
pixel zone, and a blue sub pixel zone; wherein the red sub pixel
zone, the green sub pixel zone, and the blue sub pixel zone each
comprises a substrate, a gate terminal arranged on the substrate, a
gate insulation layer arranged on the gate terminal, an island like
oxide semiconductor layer arranged on the gate insulation layer, an
island like etch stop layer arranged on the oxide semiconductor
layer, source/drain terminals arranged on the etch stop layer, a
passivation protection layer arranged on the source/drain
terminals, a red/green/blue photoresist layer arranged on the
passivation protection layer, a planarization layer arranged on the
passivation protection layer and covering the red/green/blue
photoresist layer, a semi-reflection layer arranged on the
planarization layer and in contact engagement with the source/drain
terminals through a via, an anode layer arranged on the
semi-reflection layer, a pixel definition layer arranged on the
anode layer, a photo spacer arranged on the pixel definition layer,
a white light emission layer arranged on the anode layer and the
pixel definition layer, a cathode layer arranged on the white light
emission layer, and a packaging lid arranged on the cathode layer;
and wherein the anode layer of the red sub pixel zone has a
thickness greater than a thickness of the anode layer of the green
sub pixel zone and the thickness of the anode layer of the green
sub pixel zone is greater than a thickness of the anode layer of
the blue sub pixel zone.
2. The COA WOLED structure as claimed in claim 1, wherein the
semi-reflection layer is made of a material comprising silver or
copper or an alloy thereof and the cathode layer is made of a
material comprising aluminum.
3. The COA WOLED structure as claimed in claim 1, wherein the
semi-reflection layer has a thickness of 1-100 nm.
4. The COA WOLED structure as claimed in claim 1, wherein the
thickness of the anode layer of the red sub pixel zone is 20-300
nm; the thickness of the anode layer of the green sub pixel zone is
20-250 nm; and the thickness of the anode layer of the blue sub
pixel zone is 20-200 nm.
5. The COA WOLED structure as claimed in claim 1, wherein the oxide
semiconductor layer is made of a material comprising indium gallium
zinc oxide and the anode layer is made of a material comprising
indium tin oxide.
6. A manufacturing method of a color filter on array (COA) white
organic light emitting diode (WOLED), comprising the following
steps: (1) providing a substrate and forming, in sequence on the
substrate and corresponding to each of a red sub pixel zone, a
green sub pixel zone, and a blue sub pixel zone, a gate terminal, a
gate insulation layer, an oxide semiconductor layer, an etch stop
layer, source/drain terminals, a passivation protection layer, a
red/green/blue photoresist layer, a planarization layer, and a via;
(2) forming a semi-reflection layer on the planarization layer to
correspond to each of the red/green/blue photoresist layers,
wherein the semi-reflection layer is in contact engagement with the
source/drain terminals through the via; (3) forming an anode layer
on the semi-reflection layer corresponding to each of the red sub
pixel zone and the green sub pixel zone; (4) further depositing an
anode layer on the planarization layer in such a way that the anode
layer covers the semi-reflection layer of the blue sub pixel zone;
(5) forming a photoresist layer on the anode layer corresponding to
the semi-reflection layer of each of the red sub pixel zone and the
blue sub pixel zone; (6) subjecting the anode layer to etching with
etching conditions being controlled so that the anode layer of the
green sub pixel zone is partially etched off and removing the
photoresist layer to obtain the anode layers of the red sub pixel
zone, the green sub pixel zone, and the blue sub pixel zone; (7)
forming a pixel definition layer on each of the anode layers and
forming a photo spacer on the pixel definition layer; (8) forming
white light emission layers on the anode layers and the pixel
definition layers and between the photo spacers; (9) forming
cathode layers on the photo spacers and the white light emission
layers; (10) arranging a packaging lid on the cathode layers to
package the COA WOLED so as to complete the manufacture of the COA
WOLED.
7. The manufacturing method of the COA WOLED as claimed in claim 6,
wherein step (2) uses physical vapor deposition, photolithography,
and etching operations to form the semi-reflection layer.
8. The manufacturing method of a COA WOLED as claimed in claim 6,
wherein step (3) uses physical vapor deposition, photolithography,
and etching operations to form the anode layer.
9. The manufacturing method of a COA WOLED as claimed in claim 6,
wherein step (9) uses vapor deposition to form the white light
emission layer.
10. The manufacturing method of a COA WOLED as claimed in claim 6,
wherein the semi-reflection layer is made of a material comprising
silver or copper or an alloy thereof; the cathode layer is made of
a material comprising aluminum; the oxide semiconductor layer is
made of a material comprising indium gallium zinc oxide; and the
anode layer is made of a material comprising indium tin oxide.
11. A color filter on array (COA) white organic light emitting
diode (WOLED) structure, comprising a red sub pixel zone, a green
sub pixel zone, and a blue sub pixel zone; wherein the red sub
pixel zone, the green sub pixel zone, and the blue sub pixel zone
each comprises a substrate, a gate terminal arranged on the
substrate, a gate insulation layer arranged on the gate terminal,
an island like oxide semiconductor layer arranged on the gate
insulation layer, an island like etch stop layer arranged on the
oxide semiconductor layer, source/drain terminals arranged on the
etch stop layer, a passivation protection layer arranged on the
source/drain terminals, a red/green/blue photoresist layer arranged
on the passivation protection layer, a planarization layer arranged
on the passivation protection layer and covering the red/green/blue
photoresist layer, a semi-reflection layer arranged on the
planarization layer and in contact engagement with the source/drain
terminals through a via, an anode layer arranged on the
semi-reflection layer, a pixel definition layer arranged on the
anode layer, a photo spacer arranged on the pixel definition layer,
a white light emission layer arranged on the anode layer and the
pixel definition layer, a cathode layer arranged on the white light
emission layer, and a packaging lid arranged on the cathode layer;
wherein the anode layer of the red sub pixel zone has a thickness
greater than a thickness of the anode layer of the green sub pixel
zone and the thickness of the anode layer of the green sub pixel
zone is greater than a thickness of the anode layer of the blue sub
pixel zone; wherein the semi-reflection layer is made of a material
comprising silver or copper or an alloy thereof and the cathode
layer is made of a material comprising aluminum; and wherein the
semi-reflection layer has a thickness of 1-100 nm.
12. The COA WOLED structure as claimed in claim 11, wherein the
thickness of the anode layer of the red sub pixel zone is 20-300
nm; the thickness of the anode layer of the green sub pixel zone is
20-250 nm; and the thickness of the anode layer of the blue sub
pixel zone is 20-200 nm.
13. The COA WOLED structure as claimed in claim 11, wherein the
oxide semiconductor is made of a material comprising indium gallium
zinc oxide and the anode layer is made of a material comprising
indium tin oxide.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to the field of displaying
technology, and in particular to a color filter on array (COA)
white organic light emitting diode (WOLED) structure and a
manufacturing method thereof.
[0003] 2. The Related Arts
[0004] OLED is a flat panel displaying technique of extremely
prosperous future and it shows excellent displaying performance and
possesses various advantages, such as being self-luminous, simple
structure, being ultra-thin, fast response, wide view angle, low
power consumption, and being capable of achieving flexible
displaying and is thus regarded as a "dream display". In addition,
the investment of manufacturing installation is far less than that
of TFT-LCDs (Thin-Film Transistor Liquid Crystal Displays) so that
it is now favored by major display manufacturers and becomes the
mainstream of the third-generation display devices in the field of
displaying technology. Being on the eve of mass production, new
techniques of OLED emerges virtually unlimitedly with the deepening
of research and development thereof and thus, OLED displays are
undergoing a break-through progress.
[0005] To achieve full colorization of OLED display devices, one
way is achieved with superimposition of a WOLED and a color filter
(CF). The superimposition of the WOLED and the CF allows for
realization of high definition of the OLED display device without
requiring precise and accurate masking operation.
[0006] A COA WOLED is a combination of the COA (CF on Array)
technology and the WOLED technology. Using the COA technology
allows a CF layer (red/green/blue photoresists) to be formed on an
array substrate. And, white light emitting from a white light
material of the OLED transmits through the red/green/blue
photoresists to provide light of three primary colors of red,
green, and blue. Compared to a conventional bottom emission OLED
structure, such a technique does not suffer the constraint of being
used to manufacture a large-sized panel as that of an organic
evaporation mask so as to make it widely applicable to large-sized
OLEDs.
[0007] FIG. 1 is a schematic view showing the structure of a red
sub pixel zone of a conventional COA WOLED, which comprises a
substrate 100, a gate terminal 200 formed on the substrate 10, a
gate insulation layer 300 formed on the gate terminal 200, an
island like oxide semiconductor layer 400 formed on the gate
insulation layer 300, an island like etch stop layer 500 formed on
the oxide semiconductor layer 400, source/drain terminals 600
formed on the etch stop layer 500, a passivation protection layer
700 formed on the source/drain terminals 600, a red photoresist
layer 710 formed on the passivation protection layer 700, a
planarization layer 800 formed on the passivation protection layer
700 and covering the red photoresist layer 710, an anode layer 101
formed on the planarization layer 800 and in contact engagement
with the source/drain terminals 600 through a via 810, a pixel
definition layer 110 formed on the anode layer 101, and a photo
spacer 120 formed on the pixel definition layer 110. Structures of
a green sub pixel zone and a blue sub pixel zone of the COA WOLED
structure are similar to the red sub pixel zone.
[0008] One of the drawbacks of the above-described COA WOLED is the
light emission efficiency of the three primary colors of
red/green/blue is relatively low. A conventional top emission OLED
device allows for adjustment of the thickness of the OLED device in
order to make use of micro cavity resonance to effectively enhance
the light emission efficiency. However, for the above-described COA
WOLED, it is not possible to adjust the thickness of the device in
the same way as the conventional OLED device in order to use the
micro cavity effect to enhance the light emission efficiency of
each color of light.
SUMMARY OF THE INVENTION
[0009] An object of the present invention is to provide a COA
(Color Filter on Array) WOLED (White Organic Light Emitting Diode)
structure, which provides relatively high light emission efficiency
for the three primary colors of red/green/blue transmitting through
a color filter.
[0010] Another object of the present invention is to provide a
manufacturing method of a COA WOLED that enhances the light
emission efficiency of the three primary colors of red/green/blue
transmitting through a color filter so as to improve the brightness
of a COA WOLED device.
[0011] To achieve the above object, the present invention provides
a COA WOLED structure, which comprises a red sub pixel zone, a
green sub pixel zone, and a blue sub pixel zone;
[0012] wherein the red sub pixel zone, the green sub pixel zone,
and the blue sub pixel zone each comprises a substrate, a gate
terminal arranged on the substrate, a gate insulation layer
arranged on the gate terminal, an island like oxide semiconductor
layer arranged on the gate insulation layer, an island like etch
stop layer arranged on the oxide semiconductor layer, source/drain
terminals arranged on the etch stop layer, a passivation protection
layer arranged on the source/drain terminals, a red/green/blue
photoresist layer arranged on the passivation protection layer, a
planarization layer arranged on the passivation protection layer
and covering the red/green/blue photoresist layer, a
semi-reflection layer arranged on the planarization layer and in
contact engagement with the source/drain terminals through a via,
an anode layer arranged on the semi-reflection layer, a pixel
definition layer arranged on the anode layer, a photo spacer
arranged on the pixel definition layer, a white light emission
layer arranged on the anode layer and the pixel definition layer, a
cathode layer arranged on the white light emission layer, and a
packaging lid arranged on the cathode layer; and
[0013] wherein the anode layer of the red sub pixel zone has a
thickness greater than a thickness of the anode layer of the green
sub pixel zone and the thickness of the anode layer of the green
sub pixel zone is greater than a thickness of the anode layer of
the blue sub pixel zone.
[0014] The semi-reflection layer is made of a material comprising
silver or copper or an alloy thereof and the cathode layer is made
of a material comprising aluminum.
[0015] The semi-reflection layer has a thickness of 1-100 nm.
[0016] The thickness of the anode layer of the red sub pixel zone
is 20-300 nm; the thickness of the anode layer of the green sub
pixel zone is 20-250 nm; and the thickness of the anode layer of
the blue sub pixel zone is 20-200 nm.
[0017] The oxide semiconductor layer is made of a material
comprising indium gallium zinc oxide and the anode layer is made of
a material comprising indium tin oxide.
[0018] The present invention also provides a manufacturing method
of a COA WOLED, which comprises the following steps:
[0019] (1) providing a substrate and forming, in sequence on the
substrate and corresponding to each of a red sub pixel zone, a
green sub pixel zone, and a blue sub pixel zone, a gate terminal, a
gate insulation layer, an oxide semiconductor layer, an etch stop
layer, source/drain terminals, a passivation protection layer, a
red/green/blue photoresist layer, a planarization layer, and a
via;
[0020] (2) forming a semi-reflection layer on the planarization
layer to correspond to each of the red/green/blue photoresist
layers, wherein the semi-reflection layer is in contact engagement
with the source/drain terminals through the via;
[0021] (3) forming an anode layer on the semi-reflection layer
corresponding to each of the red sub pixel zone and the green sub
pixel zone;
[0022] (4) further depositing an anode layer on the planarization
layer in such a way that the anode layer covers the semi-reflection
layer of the blue sub pixel zone;
[0023] (5) forming a photoresist layer on the anode layer
corresponding to the semi-reflection layer of each of the red sub
pixel zone and the blue sub pixel zone;
[0024] (6) subjecting the anode layer to etching with etching
conditions being controlled so that the anode layer of the green
sub pixel zone is partially etched off and removing the photoresist
layer to obtain the anode layers of the red sub pixel zone, the
green sub pixel zone, and the blue sub pixel zone;
[0025] (7) forming a pixel definition layer on each of the anode
layers and forming a photo spacer on the pixel definition
layer;
[0026] (8) forming white light emission layers on the anode layers
and the pixel definition layers and between the photo spacers;
[0027] (9) forming cathode layers on the photo spacers and the
white light emission layers;
[0028] (10) arranging a packaging lid on the cathode layers to
package the COA WOLED so as to complete the manufacture of the COA
WOLED.
[0029] Step (2) uses physical vapor deposition, photolithography,
and etching operations to form the semi-reflection layer.
[0030] Step (3) uses physical vapor deposition, photolithography,
and etching operations to form the anode layer.
[0031] Step (9) uses vapor deposition to form the white light
emission layer.
[0032] The semi-reflection layer is made of a material comprising
silver or copper or an alloy thereof; the cathode layer is made of
a material comprising aluminum; the oxide semiconductor layer is
made of a material comprising indium gallium zinc oxide; and the
anode layer is made of a material comprising indium tin oxide.
[0033] The present invention further provides a COA WOLED
structure, which comprises a red sub pixel zone, a green sub pixel
zone, and a blue sub pixel zone;
[0034] wherein the red sub pixel zone, the green sub pixel zone,
and the blue sub pixel zone each comprises a substrate, a gate
terminal arranged on the substrate, a gate insulation layer
arranged on the gate terminal, an island like oxide semiconductor
layer arranged on the gate insulation layer, an island like etch
stop layer arranged on the oxide semiconductor layer, source/drain
terminals arranged on the etch stop layer, a passivation protection
layer arranged on the source/drain terminals, a red/green/blue
photoresist layer arranged on the passivation protection layer, a
planarization layer arranged on the passivation protection layer
and covering the red/green/blue photoresist layer, a
semi-reflection layer arranged on the planarization layer and in
contact engagement with the source/drain terminals through a via,
an anode layer arranged on the semi-reflection layer, a pixel
definition layer arranged on the anode layer, a photo spacer
arranged on the pixel definition layer, a white light emission
layer arranged on the anode layer and the pixel definition layer, a
cathode layer arranged on the white light emission layer, and a
packaging lid arranged on the cathode layer;
[0035] wherein the anode layer of the red sub pixel zone has a
thickness greater than a thickness of the anode layer of the green
sub pixel zone and the thickness of the anode layer of the green
sub pixel zone is greater than a thickness of the anode layer of
the blue sub pixel zone;
[0036] wherein the semi-reflection layer is made of a material
comprising silver or copper or an alloy thereof and the cathode
layer is made of a material comprising aluminum; and
[0037] wherein the semi-reflection layer has a thickness of 1-100
nm.
[0038] The efficacy of the present invention is that the present
invention provides a COA WOLED structure, which comprises a
planarization layer on which a semi-transparent metal layer is
formed to serve as a semi-reflection layer and anode layers
corresponding to red/green/blue photoresist layers have different
thicknesses so as to form an optimum micro cavity structure for
each color of light whereby micro cavity resonance induced between
an anode and a cathode is used to enhance light emission efficiency
of the three primary colors of red/green/blue transmitting through
a color filter. The present invention provides a manufacturing
method of a COA WOLED, which forms a metal layer on a planarization
layer to serve as a semi-reflection layer to use micro cavity
resonance induced between an anode and a cathode and controls the
thicknesses of the anode layers of the red/green/blue photoresist
layers to obtain an optimum micro cavity length of each color of
light so as to enhance light emission efficiency of the three
primary colors of red/green/blue transmitting through a color
filter thereby improving brightness of a COA WOLED device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0039] The technical solution, as well as other beneficial
advantages, of the present invention will become apparent from the
following detailed description of an embodiment of the present
invention, with reference to the attached drawings.
[0040] In the drawings:
[0041] FIG. 1 is a schematic cross-sectional view showing a
conventional color filter on array (COA) white organic light
emitting diode (WOLED) structure;
[0042] FIG. 2 is a schematic cross-sectional view showing a
red/green/blue sub pixel zone of a COA WOLED structure according to
the present invention;
[0043] FIG. 3 is a schematic cross-sectional view showing a COA
WOLED structure according to the present invention;
[0044] FIG. 4 is a flow chart illustrating a manufacture method of
a COA WOLED according to the present invention;
[0045] FIG. 5 is a schematic view illustrating step 1 of the
manufacturing method of the COA WOLED according to the present
invention;
[0046] FIG. 6 is a schematic view illustrating step 2 of the
manufacturing method of the COA WOLED according to the present
invention;
[0047] FIG. 7 is a schematic view illustrating step 3 of the
manufacturing method of the COA WOLED according to the present
invention;
[0048] FIG. 8 is a schematic view illustrating step 4 of the
manufacturing method of the COA WOLED according to the present
invention;
[0049] FIG. 9 is a schematic view illustrating step 5 of the
manufacturing method of the COA WOLED according to the present
invention; and
[0050] FIG. 10 is a schematic view illustrating step 6 of the
manufacturing method of the COA WOLED according to the present
invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0051] To further expound the technical solution adopted in the
present invention and the advantages thereof, a detailed
description is given to a preferred embodiment of the present
invention and the attached drawings.
[0052] Referring collectively to FIGS. 2 and 3, the present
invention provides a color filter on array (COA) white organic
light emitting diode (WOLED) structure, which as shown in FIG. 3,
comprises a red sub pixel zone, a green sub pixel zone, and a blue
sub pixel zone.
[0053] As shown in FIG. 2, the red sub pixel zone, the green sub
pixel zone, and the blue sub pixel zone each comprises a substrate
1, a gate terminal 2 arranged on the substrate 1, a gate insulation
layer 3 arranged on the gate terminal 2, an island like oxide
semiconductor layer 4 arranged on the gate insulation layer 3, an
island like etch stop layer 5 arranged on the oxide semiconductor
layer 4, source/drain terminals 6 arranged on the etch stop layer
5, a passivation protection layer 7 arranged on the source/drain
terminals 6, a red/green/blue photoresist layer 71/72/73 arranged
on the passivation protection layer 7, a planarization layer 8
arranged on the passivation protection layer 7 and covering the
red/green/blue photoresist layer 71/72/73, a semi-reflection layer
9 arranged on the planarization layer 8 and in contact engagement
with the source/drain terminals 6 through a via 81, an anode layer
10 arranged on the semi-reflection layer 9, a pixel definition
layer 11 arranged on the anode layer 10, a photo spacer 12 arranged
on the pixel definition layer 11, a white light emission layer 13
arranged on the anode layer 10 and the pixel definition layer 11, a
cathode layer 14 arranged on the white light emission layer 13, and
a packaging lid 15 arranged on the cathode layer 14.
[0054] The anode layer 10 of the red sub pixel zone has a thickness
greater than a thickness of the anode layer 10 of the green sub
pixel zone and the thickness of the anode layer 10 of the green sub
pixel zone is greater than a thickness of the anode layer 10 of the
blue sub pixel zone.
[0055] Preferably, the semi-reflection layer 9 is made of a
material that comprises a metal or an alloy having a relatively
high transmittance, such as silver and copper. The cathode layer 14
is made of a material comprising aluminum to serve as a reflective
layer. Preferably, the semi-reflection layer 9 has a thickness of
1-100 nm.
[0056] The thickness of the anode layer 10 of the red sub pixel
zone is 20-300 nm; the thickness of the anode layer 10 of the green
sub pixel zone is 20-250 nm; and the thickness of the anode layer
10 of the blue sub pixel zone is 20-200 nm.
[0057] Preferably, the oxide semiconductor layer 4 is made of a
material comprising indium gallium zinc oxide (IGZO) and the anode
layer 10 is made of a material comprising indium tin oxide
(ITO).
[0058] In the above-described COA WOLED structure, a
semi-transparent metal layer is arranged on the planarization layer
to serve as the semi-reflection layer and the anode layers 10
corresponding to the red/green/blue photoresist layers have
different thicknesses in order to form optimum micro cavity
structures for different colors of light whereby micro cavity
resonance induced between anode and cathode can be used to
effectively increase the light emission efficiency for the three
primary colors of red/green/blue of the color filter.
[0059] Referring to FIG. 4, the present invention also provides a
manufacture method of a COA WOLED, which comprises the following
steps:
[0060] Step 1: as shown in FIG. 5, providing a substrate 1 and
forming, in sequence on the substrate 1 and corresponding to each
of a red sub pixel zone, a green sub pixel zone, and a blue sub
pixel zone, a gate terminal 2, a gate insulation layer 3, an oxide
semiconductor layer 4, an etch stop layer 5, source/drain terminals
6, a passivation protection layer 7, a red/green/blue photoresist
layer 71/72/73, a planarization layer 8, and a via 81.
[0061] Preferably, the oxide semiconductor layer 4 is made of a
material comprising indium gallium zinc oxide (IGZO).
[0062] Step 2: as shown in FIG. 6, forming a semi-reflection layer
9 on the planarization layer to correspond to each of the
red/green/blue photoresist layers 71/72/73, wherein the
semi-reflection layer 9 is in contact engagement with the
source/drain terminals 6 through the via 81.
[0063] Specifically, physical vapor deposition, photolithography,
and etching operations are used to form the semi-reflection layer
9.
[0064] Preferably, the semi-reflection layer 9 is made of a
material that comprises a metal or an alloy having a relatively
high transmittance, such as silver and copper. The cathode layer 14
is made of a material comprising aluminum to serve as a reflective
layer.
[0065] Step 3: as shown in FIG. 7, forming an anode layer 10 on the
semi-reflection layer 9 corresponding to each of the red sub pixel
zone and the green sub pixel zone.
[0066] Preferably, the anode layer 10 is made of a material
comprising indium tin oxide (ITO).
[0067] Specifically, physical vapor deposition, photolithography,
and etching operations are used to form the anode layer.
[0068] Step 4: as shown in FIG. 8, further depositing an anode
layer on the planarization layer 8 in such a way that the anode
layer covers the semi-reflection layer 9 of the blue sub pixel
zone.
[0069] Step 5: as shown in FIG. 9, forming a photoresist layer 70
on the anode layer corresponding to the semi-reflection layer 9 of
each of the red sub pixel zone and the blue sub pixel zone.
[0070] Step 6: as shown in FIG. 10, subjecting the anode layer to
etching with etching conditions being controlled so that the anode
layer of the green sub pixel zone is partially etched off and
removing the photoresist layer 70 to obtain the anode layers 10 of
the red sub pixel zone, the green sub pixel zone, and the blue sub
pixel zone.
[0071] The anode layers 10 of the red sub pixel zone, the green sub
pixel zone, and the blue sub pixel zone so obtained have different
thicknesses. Specifically, the thickness of the anode layer 10 of
the red sub pixel zone is greater than the thickness of the anode
layer 10 of the green sub pixel zone and the thickness of the anode
layer 10 of the green sub pixel zone is greater than the thickness
of the anode layer 10 of the blue sub pixel zone.
[0072] Step 7: forming a pixel definition layer 11 on each of the
anode layers 10 and forming a photo spacer 12 on the pixel
definition layer 11.
[0073] Step 8: forming white light emission layers 13 on the anode
layers 10 and the pixel definition layers 11 and between the photo
spacers 12.
[0074] Specifically, vapor deposition is used to form the white
light emission layers 13.
[0075] Step 9: forming cathode layers 14 on the photo spacers 12
and the white light emission layers 13.
[0076] Preferably, the cathode layers 14 are made of a material
comprising aluminum to serve as a reflection layer.
[0077] Step 10: arranging a packaging lid 15 on the cathode layers
14 to package the COA WOLED so as to complete the manufacture of
the COA WOLED.
[0078] In the above manufacturing process of a COA WOLED, a
semi-transparent metal layer is formed on a planarization layer to
serve as a semi-reflection layer to use micro cavity resonance
induced between an anode and a cathode and the thicknesses of the
anode layers corresponding to the red/green/blue photoresist layers
are so controlled as to obtain optimum micro cavity lengths
corresponding to different colors of light thereby enhancing the
light emission efficiency of the three primary colors of
red/green/blue transmitting through a color filter.
[0079] In summary, the present invention provides a COA WOLED
structure, which comprises a planarization layer on which a
semi-transparent metal layer is formed to serve as a
semi-reflection layer and anode layers corresponding to
red/green/blue photoresist layers have different thicknesses so as
to form an optimum micro cavity structure for each color of light
whereby micro cavity resonance induced between an anode and a
cathode is used to enhance light emission efficiency of the three
primary colors of red/green/blue transmitting through a color
filter. The present invention provides a manufacturing method of a
COA WOLED, which forms a metal layer on a planarization layer to
serve as a semi-reflection layer to use micro cavity resonance
induced between an anode and a cathode and controls the thicknesses
of the anode layers of the red/green/blue photoresist layers to
obtain an optimum micro cavity length of each color of light so as
to enhance light emission efficiency of the three primary colors of
red/green/blue transmitting through a color filter thereby
improving brightness of a COA WOLED device.
[0080] Based on the description given above, those having ordinary
skills of the art may easily contemplate various changes and
modifications of the technical solution and technical ideas of the
present invention and all these changes and modifications are
considered within the protection scope of right for the present
invention.
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